WO2020206721A1 - Panneau d'affichage et son procédé de fabrication, et module d'affichage - Google Patents

Panneau d'affichage et son procédé de fabrication, et module d'affichage Download PDF

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Publication number
WO2020206721A1
WO2020206721A1 PCT/CN2019/083624 CN2019083624W WO2020206721A1 WO 2020206721 A1 WO2020206721 A1 WO 2020206721A1 CN 2019083624 W CN2019083624 W CN 2019083624W WO 2020206721 A1 WO2020206721 A1 WO 2020206721A1
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WIPO (PCT)
Prior art keywords
layer
electrode
light
emitting
display panel
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Application number
PCT/CN2019/083624
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English (en)
Chinese (zh)
Inventor
范英春
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深圳市华星光电半导体显示技术有限公司
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Application filed by 深圳市华星光电半导体显示技术有限公司 filed Critical 深圳市华星光电半导体显示技术有限公司
Publication of WO2020206721A1 publication Critical patent/WO2020206721A1/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass

Definitions

  • This application relates to the display field, and in particular to a display panel, a manufacturing method, and a display module.
  • OLED Organic Light-Emitting Diode
  • the area of the cathode layer of the OLED will also increase.
  • Top-emitting OLED displays require that the cathode layer's transmittance is not too thick. Such a large area of the cathode layer will inevitably lead to a decrease in in-plane voltage, resulting in a decrease in the brightness of the screen and poor brightness uniformity.
  • This application provides a display panel, a manufacturing method, and a display module to solve the technical problem of poor brightness uniformity of the existing OLED display panel.
  • the present application provides a display panel including a display area, wherein:
  • the display area includes a first area located at an edge of the display area
  • An auxiliary electrode and a light-emitting protection layer on the auxiliary electrode are arranged in the first region, and the orthographic projection of the light-emitting protection layer on the auxiliary electrode partially overlaps the auxiliary electrode.
  • the auxiliary electrode includes a first electrode and a second electrode
  • the first electrode and the light shielding layer of the display panel are arranged in the same layer;
  • the second electrode and the source and drain of the display panel are arranged in the same layer.
  • the display area further includes a second area surrounded by the first area
  • the second region is provided with: a substrate, a thin film transistor unit on the substrate, a light emitting device layer and a pixel definition layer on the substrate;
  • the light-emitting device layer includes an anode layer on the thin film transistor unit, a light-emitting layer on the anode layer, and a cathode layer on the light-emitting layer;
  • One ends of the light-emitting layer and the cathode layer are connected to the auxiliary electrode.
  • the orthographic projections of the light-emitting protective layer and the light-emitting layer on the second electrode do not overlap, and the orthographic projections of the cathode layer and the light-emitting layer on the second electrode do not overlap.
  • the material of the light-emitting protection layer is one or more of silicon oxide, silicon oxynitride or silicon nitride.
  • a third electrode located in the first opening is also provided in the first region;
  • the third electrode and the anode layer are arranged in the same layer;
  • the third electrode overlaps on the side of the first opening away from the second area.
  • the first area is also provided with a pixel definition layer on the third electrode, a light-emitting protection layer on the pixel definition layer, and a fourth electrode on the light-emitting protection layer;
  • the fourth electrode and the cathode layer are formed in the same photomask process.
  • This application also proposes a method for manufacturing a display panel, which includes:
  • the display area includes a first area located at the edge of the display area, the auxiliary electrode and the light-emitting protective layer are located in the first area, and the orthographic projection of the light-emitting protective layer on the auxiliary electrode It partially overlaps with the auxiliary electrode.
  • the step of forming a thin film transistor unit and an auxiliary electrode on the substrate includes:
  • the first via hole partially exposes the active layer, and the second via hole partially exposes the first electrode
  • a third metal layer is formed on the insulating layer, and the third metal layer is patterned to form the source and drain of the thin film transistor unit and the second electrode of the auxiliary electrode,
  • the source and drain are electrically connected to the active layer through the first via hole
  • the second electrode is electrically connected to the first electrode through the second via hole.
  • the step of forming a light-emitting protective layer on the auxiliary electrode includes:
  • a fourth metal layer is formed on the flat layer, and the fourth metal layer is patterned to form the anode layer of the light emitting device layer and the third electrode connected to the auxiliary electrode,
  • the third electrode overlaps on the side of the first opening away from the thin film transistor unit
  • the step of forming a light emitting device layer in the thin film transistor unit includes:
  • one end of the light-emitting layer and the cathode layer is connected to the second electrode;
  • the light-emitting protective layer and the light-emitting layer do not overlap the front projection panel on the second electrode, and the cathode layer and the light-emitting layer do not overlap the front projection panel on the second electrode.
  • the material of the light-emitting protection layer is one or more of silicon oxide, silicon oxynitride or silicon nitride.
  • the first area is also provided with a pixel definition layer on the third electrode, a light-emitting protection layer on the pixel definition layer, and a fourth electrode on the light-emitting protection layer;
  • the fourth electrode and the cathode layer are formed in the same photomask process.
  • This application also proposes a display module, which includes a display panel and a polarizer layer and a cover layer on the display panel;
  • the display panel includes a display area
  • the display area includes a first area located at an edge of the display area
  • An auxiliary electrode and a light-emitting protection layer on the auxiliary electrode are arranged in the first region, and the orthographic projection of the light-emitting protection layer on the auxiliary electrode partially overlaps the auxiliary electrode.
  • the auxiliary electrode includes a first electrode and a second electrode
  • the first electrode and the light shielding layer of the display panel are arranged in the same layer;
  • the second electrode and the source and drain of the display panel are arranged in the same layer.
  • the display area further includes a second area surrounded by the first area
  • the second region is provided with: a substrate, a thin film transistor unit on the substrate, a light emitting device layer and a pixel definition layer on the substrate;
  • the light-emitting device layer includes an anode layer on the thin film transistor unit, a light-emitting layer on the anode layer, and a cathode layer on the light-emitting layer;
  • One ends of the light-emitting layer and the cathode layer are connected to the auxiliary electrode.
  • the orthographic projections of the light-emitting protective layer and the light-emitting layer on the second electrode do not overlap, and the orthographic projections of the cathode layer and the light-emitting layer on the second electrode do not overlap.
  • the material of the light-emitting protection layer is one or more of silicon oxide, silicon oxynitride or silicon nitride.
  • a third electrode located in the first opening is also provided in the first region;
  • the third electrode and the anode layer are arranged in the same layer;
  • the third electrode overlaps on the side of the first opening away from the second area.
  • the first area is also provided with a pixel definition layer on the third electrode, a light-emitting protection layer on the pixel definition layer, and a fourth electrode on the light-emitting protection layer;
  • the fourth electrode and the cathode layer are formed in the same photomask process.
  • an auxiliary electrode is arranged at the edge area of the display panel, and the cathode layer is overlapped with the auxiliary electrode, so that the potential of the cathode layer is increased, the voltage drop of the cathode layer is reduced, and the brightness uniformity of the display panel is improved.
  • Figure 1 is a plan structure diagram of a display panel of this application.
  • Figure 2 is a film structure diagram of the display panel of the application
  • FIG. 3 is a step diagram of the manufacturing method of the display panel of this application.
  • 4A to 4G are process steps diagrams of the manufacturing method of the display panel of this application.
  • FIG. 1 is a plan structure diagram of the display panel 100 of the present application.
  • the display panel 100 includes a display area 400 and a non-display area 500 located at the periphery of the display area 400.
  • the display area 400 includes a first area 200 located at the edge of the display area 400 and a second area 300 surrounded by the first area 200.
  • FIG. 2 is a film structure diagram of the display panel 100 of the present application.
  • the first region 200 is provided with an auxiliary electrode 30 and a light-emitting protection layer 40 on the auxiliary electrode 30, and the orthographic projection of the light-emitting protection layer 40 on the auxiliary electrode 30 partially overlaps the auxiliary electrode 30 .
  • the second region 300 is provided with a substrate 101, a thin film transistor layer 10 on the substrate 101, and a light emitting device layer 20 on the thin film transistor layer 10.
  • the raw material of the substrate 101 may be one of a glass substrate, a quartz substrate, and a resin substrate.
  • the substrate 101 may also be a flexible substrate.
  • the material of the flexible substrate may be PI (polyimide).
  • the thin film transistor layer 10 includes a plurality of thin film transistor units 11 located in the second region 300 and the auxiliary electrode 30 located in the first region 200.
  • the thin film transistor unit 11 includes an etching barrier type, a back channel etching type, or a top gate thin film transistor type structure, which is not specifically limited. This application takes the top-gate thin film transistor type as an example for description.
  • the thin film transistor unit 11 includes a light shielding layer 102, a buffer layer 103, an active layer 104, a gate insulating layer 105, a gate 106, an inter-insulating layer 107, a source and drain 108, a passivation layer 109, and a flat layer 110.
  • the light shielding layer 102 is formed on the substrate 101 and is mainly used to shield the light source for the thin film transistor unit 11 and affect the driving effect of the thin film transistor.
  • the buffer layer 103 is formed on the light-shielding layer 102, and is mainly used to buffer the pressure between the layer structure of the film, and may also have a certain function of blocking water and oxygen.
  • the material of the buffer layer 103 includes one or more of silicon nitride or silicon oxide.
  • the active layer 104 is formed on the buffer layer 103.
  • the active layer 104 includes ion-doped doped regions (not shown).
  • the material of the active layer 104 may be indium gallium zinc oxide (IGZO), that is, a conductive semiconductor.
  • IGZO indium gallium zinc oxide
  • the gate insulating layer 105 is formed on the active layer 104.
  • the gate insulating layer 105 covers the active layer 104.
  • the inter-insulating layer 107 is used to isolate the active layer 104 from other metal layers.
  • the gate 106 is formed on the gate insulating layer 105.
  • the metal material of the gate 106 can generally be molybdenum, aluminum, aluminum-nickel alloy, molybdenum tungsten alloy, chromium, or copper, or a combination of the foregoing metal materials.
  • the metal material of the gate 106 may be molybdenum.
  • the inter-insulating layer 107 is formed on the gate 106.
  • the inter-insulating layer 107 covers the gate 106.
  • the inter-insulating layer 107 is mainly used to isolate the gate 106 from the source and drain 108.
  • the source and drain 108 are formed on the inter-insulating layer 107.
  • the metal material of the source and drain electrodes 108 can usually be molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, copper, or titanium aluminum alloy, or a combination of the foregoing metal materials.
  • the source and drain 108 are electrically connected to the doped region on the active layer 104 through the first via 111.
  • the metal material of the source and drain electrodes 108 may be titanium aluminum titanium.
  • the passivation layer 109 and the flat layer 110 are formed on the source and drain electrodes 108, and the passivation layer 109 is used to ensure the flatness of the thin film transistor process.
  • the light emitting device layer 20 includes an anode layer 201, a light emitting layer 202, and a cathode layer 203 formed on the array substrate;
  • the anode layer 201 is formed on the flat layer 110.
  • the anode layer 201 is mainly used to provide holes for absorbing electrons.
  • the anode layer 201 may be a non-transparent or transparent metal electrode.
  • the light-emitting layer 202 is formed on the anode layer 201.
  • the light-emitting layer 202 is divided into a plurality of light-emitting units by the pixel definition layer 204.
  • the cathode layer 203 is formed on the light-emitting layer 202.
  • the cathode layer 203 covers the light-emitting layer 202 and the pixel definition layer 204 on the flat layer 110.
  • the cathode layer 203 is a transparent material.
  • the light-emitting device layer 20 further includes a third via 205.
  • the anode layer 201 is electrically connected to the source and drain 108 through the third via 205.
  • the anode layer 201 is made of a non-transparent material, the light generated by the light-emitting layer 202 is projected away from the substrate 101 through the anode layer 201.
  • a reflective layer may be disposed on the opposite side of the anode layer 201, so that the light passing through the anode layer 201 is projected in a direction away from the substrate 101.
  • a substrate 101, an auxiliary electrode 30 on the substrate 101, and a light-emitting protection layer on the auxiliary electrode 30 are provided in the first region 200 40.
  • the auxiliary electrode 30 includes a first electrode 301 and a second electrode 302.
  • the first electrode 301 and the light shielding layer 102 of the display panel 100 are provided in the same layer, and the second electrode 302 is provided in the same layer as the source and drain electrodes 108 of the display panel 100.
  • the first electrode 301 and the active layer 104 of the display panel 100 are arranged in the same layer, and the second electrode 302 is arranged in the same layer as the source and drain 108 of the display panel 100.
  • the second electrode 302 and the gate 106 may be provided in the same layer.
  • the auxiliary electrode 30 further includes a second via 303.
  • the second electrode 302 is electrically connected to the first electrode 301 through the second via 303.
  • the second via 303 penetrates the inter-insulating layer 107 and part of the buffer layer 103.
  • a first opening 304 is provided in the first area 200.
  • the first opening 304 is located on the second electrode 302.
  • a third electrode 305 located in the first opening 304 is also provided in the first region 200.
  • the third electrode 305 and the anode layer 201 are arranged in the same layer.
  • the third electrode 305 overlaps on the side of the first opening 304 away from the second region 300.
  • the first region 200 is also provided with a pixel defining layer 204 on the third electrode 305, a light emitting protection layer 40 on the pixel defining layer 204, and a fourth electrode on the light emitting protection layer 40 306.
  • the fourth electrode 306 and the cathode layer 203 are formed in the same photomask process.
  • the orthographic projection of the light-emitting protection layer 40 on the auxiliary electrode 30 partially overlaps the auxiliary electrode 30.
  • the light-emitting protective layer 40 is mainly used as a shielding layer in the evaporation process of the light-emitting layer 202 and the cathode layer 203.
  • the light-emitting layer 202 and the cathode layer 203 overlap on the side of the first opening 304 close to the first region 200.
  • one end of the light-emitting layer 202 and the cathode layer 203 is connected to the auxiliary electrode 30.
  • the orthographic projections of the light-emitting protective layer 40 and the light-emitting layer 202 on the second electrode 302 do not overlap, and the orthographic projections of the cathode layer 203 and the light-emitting layer 202 on the second electrode 302 do not overlap .
  • the material of the light-emitting protection layer 40 is one or more of silicon oxide, silicon oxynitride, or silicon nitride.
  • an auxiliary electrode 30 is provided at the edge area of the display panel 100.
  • the cathode layer 203 is overlapped with the auxiliary electrode 30, so that the potential of the cathode layer 203 is increased, the voltage drop of the cathode layer 203 is reduced, and the brightness of the display panel 100 is improved. Uniformity.
  • FIG. 3 is a step diagram of the manufacturing method of the display panel 100 of this application.
  • FIGS. 4A to 4G are process steps diagrams of the manufacturing method of the display panel 100 of the present application.
  • the manufacturing method of the display panel 100 includes:
  • the raw material of the substrate 101 may be one of a glass substrate, a quartz substrate, and a resin substrate.
  • the substrate 101 may also be a flexible substrate.
  • the material of the flexible substrate may be PI (polyimide).
  • the thin film transistor layer 10 includes a plurality of thin film transistor units 11 and auxiliary electrodes 30 located at the edge of the display panel 100.
  • the display panel 100 includes a display area 400 and a non-display area 500 located at the periphery of the display area 400.
  • the display area 400 includes a first area 200 located at the edge of the display area 400 and a second area 300 surrounded by the first area 200.
  • the thin film transistor unit 11 is located in the second region 300, and the auxiliary electrode 30 is located in the first region 200.
  • this step specifically includes:
  • the first electrode 301 and the light shielding layer 102 are formed in the same photomask process.
  • the material of the first metal layer is opaque metal molybdenum.
  • the buffer layer 103 is formed on the light-shielding layer 102, and is mainly used to buffer the pressure between the layer structure of the film, and may also have a certain function of blocking water and oxygen.
  • the material of the buffer layer 103 includes one or more of silicon nitride or silicon oxide.
  • the active layer 104 is formed on the buffer layer 103.
  • the active layer 104 includes ion-doped doped regions (not shown).
  • the material of the active layer 104 may be indium gallium zinc oxide (IGZO), that is, a conductive semiconductor.
  • IGZO indium gallium zinc oxide
  • the gate insulating layer 105 is formed on the active layer 104.
  • the gate insulating layer 105 covers the active layer 104.
  • the inter-insulating layer 107 is used to isolate the active layer 104 from other metal layers.
  • the gate 106 is formed on the gate insulating layer 105.
  • the metal material of the gate 106 can generally be molybdenum, aluminum, aluminum-nickel alloy, molybdenum tungsten alloy, chromium, or copper, or a combination of the foregoing metal materials.
  • the metal material of the gate 106 may be molybdenum.
  • the inter-insulating layer 107 is formed on the gate 106.
  • the inter-insulating layer 107 covers the gate 106.
  • the inter-insulating layer 107 is mainly used to isolate the gate 106 from the source and drain 108.
  • the first via hole 111 partially exposes the active layer 104
  • the second via hole 303 partially exposes the first electrode 301.
  • the first via hole 111 penetrates the inter-insulating layer 107
  • the second via hole 303 penetrates the inter-insulating layer 107 and part of the buffer layer 103.
  • the metal material of the source and drain electrodes 108 can usually be molybdenum, aluminum, aluminum-nickel alloy, molybdenum-tungsten alloy, chromium, copper, or titanium aluminum alloy, or a combination of the foregoing metal materials .
  • the source and drain 108 are electrically connected to the doped region on the active layer 104 through the first via 111.
  • the second electrode 302 is electrically connected to the first electrode 301 through the second via 303.
  • the first electrode 301 and the second electrode 302 form the auxiliary electrode 30 of the display panel 100.
  • This step specifically includes:
  • the passivation layer 109 and the flat layer 110 are formed on the source and drain electrodes 108, and the passivation layer 109 is used to ensure the process of the thin film transistor Flatness.
  • the third via 205 and the first opening 304 are two etching processes.
  • the third via hole 205 penetrates the passivation layer 109 and the flat layer 110.
  • the first opening 304 is located on the second electrode 302.
  • a fourth metal layer is formed on the flat layer 110, and the fourth metal layer is patterned to form the anode layer 201 of the light emitting device layer 20 and the third electrode connected to the auxiliary electrode 30 305;
  • the anode layer 201 is formed on the flat layer 110.
  • the anode layer 201 is mainly used to provide holes for absorbing electrons.
  • the anode layer 201 may be a non-transparent or transparent metal electrode.
  • the anode layer 201 is made of a non-transparent material, the light generated by the light-emitting layer 202 is projected away from the substrate 101 through the anode layer 201.
  • a reflective layer may be disposed on the opposite side of the anode layer 201, so that the light passing through the anode layer 201 is projected in a direction away from the substrate 101.
  • the third electrode 305 is located in the first opening 304.
  • the third electrode 305 and the anode layer 201 are formed by the same photomask process.
  • the third electrode 305 overlaps on the side of the first opening 304 away from the thin film transistor unit 11.
  • a pixel definition layer 204 is formed on the anode layer 201 and the third electrode 305, and a second opening 206 is formed on the anode layer 201 and the corresponding first opening 304 is formed on the anode layer 201 by using a third etching process.
  • the pixel definition layer 204 is formed on the anode layer 201 and the third electrode 305, and a second opening 206 is formed on the anode layer 201 and the corresponding first opening 304 is formed on the anode layer 201 by using a third etching process.
  • the second opening 206 is located in the second region 300.
  • the second opening 206 is a pixel opening
  • the support 307 may be a photoresist material.
  • the support 307 may also be aluminum, molybdenum, copper and other easily removable materials with a higher density than indium tin oxide.
  • the orthographic projection of the light-emitting protective layer 40 on the auxiliary electrode 30 partially overlaps the auxiliary electrode 30.
  • the material of the light-emitting protection layer 40 is one or more of silicon oxide, silicon oxynitride, or silicon nitride.
  • the light-emitting layer 202 and the cathode layer 203 are sequentially formed on the pixel definition layer 204.
  • the light-emitting layer 202 is formed on the anode layer 201.
  • the light-emitting layer 202 is divided into a plurality of light-emitting units by the pixel definition layer 204.
  • the cathode layer 203 is formed on the light-emitting layer 202.
  • the cathode layer 203 covers the light-emitting layer 202 and the pixel definition layer 204 on the array substrate.
  • the cathode layer 203 is a transparent material.
  • the light-emitting protective layer 40 is mainly used as a shielding layer in the vapor deposition process of the light-emitting layer 202 and the cathode layer 203.
  • the light-emitting layer 202 and the cathode layer 203 overlap on the side of the first opening 304 close to the first region 200.
  • the light-emitting layer 202 is evaporated at a first angle
  • the cathode layer 203 is evaporated at a second angle.
  • the first angle is smaller than the second angle.
  • one end of the light-emitting layer 202 and the cathode layer 203 is connected to the auxiliary electrode 30.
  • the orthographic projections of the light-emitting protective layer 40 and the light-emitting layer 202 on the second electrode 302 do not overlap, and the orthographic projections of the cathode layer 203 and the light-emitting layer 202 on the second electrode 302 do not overlap .
  • the fourth electrode 306 is also formed.
  • the fourth electrode 306 is located on the light-emitting protection layer 40.
  • the application also proposes a display module, which includes the above-mentioned display panel and a polarizer layer and a cover layer on the display panel.
  • the working principle of the display module is the same or similar to that of the above-mentioned display panel, and the specific implementation manners will not be repeated in this application.
  • the display area of the display panel includes a first area located at the edge of the display area; the first area is provided with auxiliary electrodes and located in the The light-emitting protection layer on the auxiliary electrode, and the orthographic projection of the light-emitting protection layer on the auxiliary electrode partially overlaps the auxiliary electrode.
  • an auxiliary electrode is arranged at the edge area of the display panel, and the cathode layer is overlapped with the auxiliary electrode, so that the potential of the cathode layer is increased, the voltage drop of the cathode layer is reduced, and the brightness uniformity of the display panel is improved.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

L'invention concerne un panneau d'affichage (100) et son procédé de fabrication, et un module d'affichage, le panneau d'affichage (100) comprenant une zone d'affichage (400), et la zone d'affichage (400) comprenant une première région (200) située au bord de la zone d'affichage (400) ; une électrode auxiliaire (30) et une couche de protection électroluminescente (40) située sur l'électrode auxiliaire (30) sont disposées à l'intérieur de la première région (200), et la projection orthographique de la couche de protection électroluminescente (40) sur l'électrode auxiliaire (30) chevauche partiellement l'électrode auxiliaire (30).
PCT/CN2019/083624 2019-04-08 2019-04-22 Panneau d'affichage et son procédé de fabrication, et module d'affichage WO2020206721A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201910276226.7 2019-04-08
CN201910276226.7A CN110071225A (zh) 2019-04-08 2019-04-08 显示面板及制作方法

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WO2020206721A1 true WO2020206721A1 (fr) 2020-10-15

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CN114267686A (zh) * 2021-12-14 2022-04-01 武汉华星光电半导体显示技术有限公司 显示面板及显示装置
EP4199681A1 (fr) * 2021-12-16 2023-06-21 LG Display Co., Ltd. Appareil d'affichage comprenant un dispositif électroluminescent
GB2615388A (en) * 2021-12-28 2023-08-09 Lg Display Co Ltd Light emitting display device

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CN110571243A (zh) * 2019-08-13 2019-12-13 武汉华星光电半导体显示技术有限公司 显示面板
CN110854157A (zh) * 2019-08-20 2020-02-28 武汉华星光电半导体显示技术有限公司 一种显示面板及其制作方法、显示装置
CN110556406A (zh) * 2019-08-26 2019-12-10 深圳市华星光电半导体显示技术有限公司 一种oled显示面板及其制备方法
CN110518053A (zh) * 2019-08-29 2019-11-29 合肥鑫晟光电科技有限公司 显示基板及其制备方法、显示装置
CN110993642A (zh) * 2019-11-01 2020-04-10 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法
CN111223876B (zh) * 2019-11-06 2022-12-06 深圳市华星光电半导体显示技术有限公司 显示面板及显示面板的制备方法
CN112331808B (zh) * 2019-12-30 2023-07-28 广东聚华印刷显示技术有限公司 弱粘性薄膜、喷墨印刷显示面板及其制备方法与显示装置
CN111211243B (zh) * 2020-01-09 2022-11-04 京东方科技集团股份有限公司 显示基板及其制作方法、显示装置
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WO2022133903A1 (fr) * 2020-12-24 2022-06-30 京东方科技集团股份有限公司 Panneau d'affichage, son procédé de fabrication et appareil d'affichage
CN112802975B (zh) * 2020-12-31 2022-11-29 上海天马微电子有限公司 一种显示面板、显示装置及阵列基板的制造方法
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WO2022222078A1 (fr) * 2021-04-21 2022-10-27 京东方科技集团股份有限公司 Substrat d'affichage et son procédé de fabrication, et appareil d'affichage
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CN116887615B (zh) * 2023-06-30 2024-08-06 惠科股份有限公司 显示面板的制作方法、显示面板及显示装置

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