WO2020199771A1 - Micro LED的巨量转移方法和巨量转移装置 - Google Patents

Micro LED的巨量转移方法和巨量转移装置 Download PDF

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Publication number
WO2020199771A1
WO2020199771A1 PCT/CN2020/075535 CN2020075535W WO2020199771A1 WO 2020199771 A1 WO2020199771 A1 WO 2020199771A1 CN 2020075535 W CN2020075535 W CN 2020075535W WO 2020199771 A1 WO2020199771 A1 WO 2020199771A1
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Prior art keywords
micro led
led chip
loading
shape
mass transfer
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English (en)
French (fr)
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王国华
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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BOE Technology Group Co Ltd
Hefei Xinsheng Optoelectronics Technology Co Ltd
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Priority to US16/770,410 priority Critical patent/US11302562B2/en
Publication of WO2020199771A1 publication Critical patent/WO2020199771A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/741—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including a cavity for storing a finished or partly finished device during manufacturing or mounting, e.g. for an IC package or for a chip
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H10P72/7414—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support the auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H10P74/232—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes comprising connection or disconnection of parts of a device in response to a measurement

Definitions

  • the present disclosure relates to the technical field of Micro LED manufacturing, and in particular, to a method and device for mass transfer of Micro LED.
  • Micro LED display panels Compared with traditional liquid crystal display panels, Micro LED display panels have the advantages of higher resolution, better contrast, faster response time and lower energy consumption, and are therefore regarded as the next generation of display technology.
  • Micro LED chips After the production of Micro LED chips is completed, tens of thousands to hundreds of thousands of Micro LED chips need to be transferred to the drive circuit board to form an LED array. This process is called "mass transfer”. Due to the small size of Micro LEDs, how to simultaneously ensure transfer efficiency and yield has become a major problem in the process of Micro LED industrialization.
  • the massive transfer process of red, blue and green (RGB) three-color Micro LEDs generally adopts a staged transfer method, that is, only one color of Micro LED chips can be transferred at a time, and vibration and wind are used to make the corresponding shape.
  • the Micro LED chip falls into the loading slot. Therefore, for RGB three-color Micro LED chips with the same shape, three massive transfer processes are required. Although the process is simple and the yield is high, this method has low efficiency.
  • a method for mass transfer of Micro LEDs including:
  • a Micro LED chip is provided.
  • the Micro LED chip includes a first Micro LED chip capable of emitting a first color and a second Micro LED chip capable of emitting a second color.
  • the first color is different from the second color.
  • the shape of the first Micro LED chip is different from the shape of the second Micro LED chip;
  • the loading surface is provided with a first type loading slot and a second type loading slot.
  • a first shape matching the shape of the first Micro LED chip, and the second type loading slot has a second shape matching the shape of the second Micro LED chip;
  • the loading mold is vibrated, and the first and second Micro LED chips are dropped into the first and second type loading grooves with matching shapes, respectively, and the loading mold is tilted so that it does not fall into the first The Micro LED chips of the first and second types of loading slots leave the loading surface.
  • the cross-sectional shape of the first Micro LED chip is different from the cross-sectional shape of the second Micro LED chip.
  • the cross-sectional shape of each of the first and second Micro LED chips is substantially trapezoidal or triangular.
  • the longitudinal section of each of the first and second Micro LED chips is substantially trapezoidal.
  • the included angle of the trapezoidal longitudinal section of each of the first and second Micro LED chips is about 75° to about 85°.
  • the ratio of the first Micro LED chip to the second Micro LED chip is approximately 1:1.
  • the Micro LED chip further includes a third Micro LED chip capable of emitting a third color, and the third color is different from the first color and the second color.
  • the shape of the Micro LED chip is different from the shape of the first Micro LED chip and the shape of the second Micro LED chip; a third type of loading groove is provided on the loading surface of the loading mold, and The third type of loading slot has a third shape that matches the shape of the third Micro LED chip.
  • the cross-sectional shape of the first Micro LED chip is different from the cross-sectional shape of the second Micro LED chip, and the cross-sectional shape of the first Micro LED chip is different from that of the first Micro LED chip.
  • the cross-sectional shape of the chip is different from the cross-sectional shape of the second Micro LED chip.
  • the cross-sectional shape of each of the first, second, and third Micro LED chips is substantially trapezoidal or triangular.
  • the cross-sectional shape of the first Micro LED chip is an isosceles trapezoid
  • the cross-sectional shape of the second Micro LED chip is a left right-angled trapezoid
  • the cross-sectional shape of the third Micro LED chip is It is a right-angled trapezoid.
  • each of the first, second and third Micro LED chips is substantially trapezoidal.
  • the included angle of the trapezoidal longitudinal section of each of the first, second, and third Micro LED chips is about 75° to about 85°.
  • the ratio of the first Micro LED chip, the second Micro LED chip, and the third Micro LED chip is approximately 1:1:1.
  • the angle of inclination of the loading mold is about 15° to about 30°.
  • the mass transfer method may further include: detecting the loading surface with an automatic optical inspection device, and filling the empty loading slot with Micro LED chips of corresponding shape with a robot; testing the Micro LED on the loading mold The component function of the chip, and the use of a robot to remove the defective Micro LED chip, and then fill in the corresponding shape of the good Micro LED chip; and the substrate with the circuit and the Micro LED chip on the loading mold are welded and packaged. .
  • a mass transfer device for Micro LED including:
  • the loading surface of the loading mold is provided with different types of loading grooves, the different types of the loading grooves have different shapes, and the shape of one type of the loading groove is suitable for one color of Micro LED chips Matches the shape of; and
  • a vibration source which is in contact with the loading mold.
  • each loading tank is provided with vacuum adsorption holes.
  • the depth of each of the loading grooves is about 2.5 microns to about 5 microns.
  • FIG. 1 is a schematic flowchart of a method for mass transfer of Micro LEDs according to an embodiment of the present disclosure
  • Fig. 2 is a schematic bottom view of the three-color Micro LED chip according to an embodiment of the present disclosure
  • Fig. 3 is a schematic bottom view of a three-color Micro LED chip according to another embodiment of the present disclosure.
  • FIG. 4 is a schematic diagram of the shape matching of the Micro LED chip and the loading slot of the loading mold according to an embodiment of the present disclosure
  • Figure 5a is a schematic bottom view of a Micro LED chip according to an embodiment of the present disclosure.
  • Figure 5b is a schematic partial cross-sectional structure diagram of the Micro LED chip in Figure 5a along the line A-A';
  • FIG. 6 is a schematic top view of the structure of a loading mold according to an embodiment of the present disclosure.
  • Fig. 7 is a schematic diagram of a manipulator filling process according to an embodiment of the present disclosure.
  • Micro LED chips of different colors are designed to have different shapes, and there are multiple types of loading slots on the loading mold.
  • the type loading slot has a corresponding shape that matches the shape of the Micro LED chip of one color. In this way, the Micro LED chip of each color can only be loaded into one type of loading slot with the corresponding shape.
  • the massive transfer process of different colors of Micro LED chips can double the transfer efficiency while ensuring a higher transfer yield.
  • a method for mass transfer of Micro LED including: providing a Micro LED chip, the Micro LED chip including a first Micro LED chip capable of emitting a first color and a second color emitting method.
  • the second Micro LED chip the first color is different from the second color, and the shape of the first Micro LED chip is different from the shape of the second Micro LED chip; dumped onto the loading surface of the loading mold at one time
  • a first type of loading slot and a second type of loading slot are provided on the loading surface, and the first type of loading slot has a shape that matches the shape of the first Micro LED chip
  • the second type of loading slot has a second shape that matches the shape of the second Micro LED chip; and the loading mold is vibrated, and the first and second Micro LED chips Respectively fall into the first and second type loading grooves with matching shapes, and tilt the loading mold, so that the Micro LED chips that have not fallen into the first and second type loading grooves leave the loading surface.
  • the cross-sectional shape of the first Micro LED chip is different from the cross-sectional shape of the second Micro LED chip.
  • the cross-sectional shape of each of the first and second Micro LED chips is substantially trapezoidal or triangular.
  • the longitudinal section of each of the first and second Micro LED chips is substantially trapezoidal.
  • the included angle of the trapezoidal longitudinal section of each of the first and second Micro LED chips is about 75° to about 85°.
  • the ratio of the first Micro LED chip and the second Micro LED chip is approximately 1:1.
  • the tilt angle of the loading mold is about 15° to about 30°.
  • the Micro LED chips include a first Micro LED chip capable of emitting a first color and a second Micro LED chip capable of emitting a second color, where the first color is different from the second color, The shape of the first Micro LED chip is different from the shape of the second Micro LED chip.
  • the Micro LED chip 100 of multiple colors is provided, and the shape of the Micro LED chip 110 capable of emitting the first color is different from the shape of the second Micro LED chip 120 capable of emitting the second color.
  • the color of the Micro LED chip 100 is different in shape.
  • the cross-sectional shape of the first Micro LED chip 110 is different from the cross-sectional shape of the second Micro LED chip 120.
  • the specific cross-sectional shape of the Micro LED chip 100 can be designed by those skilled in the art according to the specific arrangement of the Micro LED component array, such as a triangle or a quadrilateral.
  • the cross-sectional shape of the Micro LED chip 100 may be a trapezoid, for example, the top and bottom, left and right are asymmetrical trapezoids, so that the shape of the Micro LED chip 100 can be different even if it is turned over or rotated.
  • the Micro LED chips 100 of different colors can be matched with different types of loading slots 220 on the loading mold 200 respectively.
  • the specific color number of the Micro LED chip 100 is not particularly limited, and those skilled in the art can design accordingly according to the color rendering design of the Micro LED component array.
  • the Micro LED chip 100 may include a first Micro LED chip 110 (for example, red R), a second Micro LED chip 120 (for example, green G), and a third Micro LED chip 130 (For example, blue B).
  • the shape of the first Micro LED chip 110 is different from the shape of the second Micro LED chip 120
  • the shape of the third Micro LED chip 130 is different from the shape of the first Micro LED chip 110 and the shape of the second Micro LED chip 120.
  • the cross-sectional shape of the first Micro LED chip 110 may be an isosceles trapezoid
  • the cross-sectional shape of the second Micro LED chip 120 may be a left right-angled trapezoid
  • the third Micro LED chip The cross-sectional shape of 130 may be right-angled trapezoid. In this way, the three-color Micro LED chip shape can be greatly different.
  • the longitudinal section of the Micro LED chip 100 may be rectangular, so that the prismatic Micro LED chip 100 of equal width up and down is not easy to fall out after falling into the loading slot 220 on the loading mold 200, even if The subsequent large-angle inclined loading mold makes it difficult for the Micro LED chip 100 falling into the loading slot 220 to come out.
  • the longitudinal section of the Micro LED chip 100 can also be trapezoidal.
  • the Micro LED chip 100 with a prism shape with a large upper and a smaller bottom can only fall into shape matching. ⁇ Loading tank 220.
  • a Micro LED chip can only fall into a corresponding type of loading slot that matches its shape, but cannot fall into another type of loading slot that does not match its shape. For example (the first Micro LED chip 110 can only fall into the first type of loading slot).
  • the first Micro LED chip 110 which is in a symmetrical isosceles trapezoid shape, cannot fall into the first loading slot even after being turned over In 221
  • the second Micro LED chip 120 and the third Micro LED chip 130 which are mirror-symmetrical, cannot fall into each other's loading slot after being turned over, so that the yield rate of production can be improved.
  • the included angle of the trapezoidal longitudinal section may be about 75° to about 85°. In this way, the pyramid-shaped Micro LED chip 100 with the above-mentioned included angle range has a higher probability of falling into the matching loading slot 220.
  • the Micro LED chip 100 after the Micro LED chip 100 is dropped, it can be sucked by the vacuum suction hole 230 at the bottom of the loading slot 220, and subsequent inclination will not cause the Micro LED chip 100 falling into the loading slot 220 to easily fall off.
  • each Micro LED chip 100 may include a gallium nitride (GaN) epitaxial layer 101, an N-type GaN layer 102, an InGaN/GaN light-emitting layer 103, and a P-type GaN Layer 104, Ni/Au transparent conductive layer 105, N-type electrode 106, P-type electrode 107 and color layer 108.
  • GaN gallium nitride
  • the N-type GaN layer 102 is arranged on one surface of the epitaxial layer 101
  • the light-emitting layer 103 is arranged on a part of the surface of the N-type GaN layer 102
  • the P-type GaN layer 104 is arranged on one surface of the light-emitting layer 103, transparent and conductive.
  • the layer 105 is provided on a part of the surface of the P-type GaN layer 104
  • the N-type electrode 106 is provided on a part of the surface of the N-type GaN layer 102
  • the P-type electrode 107 is provided on a part of the surface of the transparent conductive layer 105
  • the color layer 108 covers N-type electrode 106, part of N-type GaN layer 102, part of P-type GaN layer 104, and part of transparent conductive layer 105.
  • each Micro LED chip 100 composed of the above-mentioned layers
  • the cross section of each Micro LED chip 100 is roughly parallel to the cross section of each layer
  • the longitudinal cross section of each Micro LED chip 100 It is a cross section roughly perpendicular to each layer.
  • S200 pour the first and second Micro LED chips on the loading surface of the loading mold at one time.
  • the excess Micro LED chips 100 are poured onto the loading surface 210 of the loading mold 200 at one time, and referring to FIG. 6, the loading slot 220 on the loading surface 210 (including the first type loading slot and the second type loading The shape of the slot) is also different.
  • the first type of loading slot has a first shape that matches the shape of the first Micro LED chip 110
  • the second type of loading slot has a second shape that matches the shape of the second Micro LED chip 120. That is, the shape of one type of loading slot 220 matches the shape of the Micro LED chip 100 of one color.
  • matching in this text specifically refers to not only that the shape of the loading slot 220 corresponds to the shape of the Micro LED chip 100, but also that the loading slot 220 and the Micro LED chip 100 need to be concave-convex matched.
  • the loading slot 220 may also include a first type loading slot 221, a second type loading slot 222, and a third type loading slot 223
  • the shape of the first type loading slot 221 only matches the shape of the first Micro LED chip 110, that is, only the first Micro LED chip 110 can fall into the first type loading slot 221, and the second Micro LED chip 120 and the second 3. None of the Micro LED chips 130 can fall into the first type loading slot 221.
  • the shape of the second type loading slot 222 only matches the shape of the second Micro LED chip 120
  • the third type loading slot 223 only matches the shape of the second type loading slot 223.
  • the shapes of the three Micro LED chips 130 match. In this way, by designing multiple types of loading slots 220 with different shapes, the loading mold 200 can transfer three different colors of Micro LED chips 100 in a large amount at one time.
  • the ratio of the first Micro LED chip 110, the second Micro LED chip 120, and the third Micro LED chip 130 may be approximately 1:1:1.
  • R/ The loading mold 200 arranged in a G/B sequence can make the ratio of the three-color Micro LED chips 100 more balanced, so that the three-color Micro LED chips 100 have the same probability of falling into the respective loading slots 220.
  • S300 Vibrate the loading mold, and make the first and second Micro LED chips fall into the first and second type loading slots with matching shapes, and tilt the loading mold so that it does not fall into the first and second types
  • the Micro LED chip in the loading slot leaves the loading surface.
  • the Micro LED chips 100 scattered on the loading surface 210 are dropped into the loading slot 220 by vibration, and the loading mold 200 is tilted so that the Micro LED chips 100 that have not fallen into the loading slot 220 leave the loading surface 210 .
  • the Micro LED chip 100 that falls into the loading slot 220 can also be adsorbed by the vacuum suction hole 230 at the bottom of the loading slot 220, and the mold 200 is tilted without falling into the loading slot.
  • the 220 Micro LED chip 100 is easy to fall off.
  • the inclination angle of the loading mold may be about 15° to about 30°. In this way, the loading mold 200 with the above-mentioned small angle range can be tilted to make the Micro LED chips not falling into the loading slot 220 100 are all away from the loading surface 210, so that no Micro LED chip 100 that has not fallen into the loading slot 220 remains on the loading surface 210.
  • the mass transfer method may further include:
  • S400 Use automatic optical inspection equipment to detect the loading surface, and use the manipulator 300 to fill the empty loading slot with Micro LED chips of corresponding shape.
  • the automatic optical inspection equipment detects the loading surface 210, and referring to FIG. 7, the manipulator 300 is used to fill the empty loading slot 220 with the Micro LED chip 100 of the corresponding shape.
  • S500 Test the component functions of the Micro LED chip on the loading mold, and use the robot 300 to remove the defective Micro LED chip, and then fill in the good Micro LED chip of the corresponding shape.
  • the loading mold 200 filled with the Micro LED chip 100 in step S400 is connected to the test board to test the functions of the components, and then the robot 300 is used to remove the defective Micro LED chip 100 and fill in the good Micro LED chip 100.
  • the LED chip 100 in this way, completes the inspection before soldering.
  • the complementary metal oxide semiconductor (CMOS) or thin film transistor (TFT) substrate on which the pixel drive circuit is made is aligned and welded with the Micro LED chip 100 detected in step S500, and then packaged.
  • CMOS complementary metal oxide semiconductor
  • TFT thin film transistor
  • the present disclosure proposes a method for mass transfer. Firstly, Micro LED chips of different colors are designed into different shapes, and then the various types of loading slots on the loading mold are also Designed in different shapes, so that the mass transfer process of at least two colors of Micro LED chips can be realized at one time, and the shape of one type of loading slot on the loading mold is only the same as the shape of one color of Micro LED chips Matching, thereby increasing the transfer efficiency exponentially, while also ensuring a higher transfer yield.
  • the present disclosure proposes a mass transfer device for Micro LED.
  • the mass transfer device includes a loading mold 200 and a vibration source; wherein, the loading surface 210 of the loading mold 200 is provided with different types of loading slots 220, and the different types of loading slots 220 have different shapes, and The shape of one type of loading slot 200 is suitable to match the shape of the Micro LED chip 100 of one color; the vibration source is in contact with the loading mold.
  • the mass transfer device may further include a blowing device, and the blowing device is provided on the side where the mold is loaded. In this way, the wind can assist the vibration to make the Micro LED chip fall into the loading slot 200 faster.
  • the bottom surface of the loading tank 220 may be provided with vacuum suction holes 230. In this way, the prism-shaped Micro LED chip 100 can be vacuum sucked after falling into the loading slot 220, so that the problem of the Micro LED chip 100 falling out of the loading slot 220 will not occur when the loading mold 200 is tilted.
  • the depth of the loading groove 220 may be about 2.5 micrometers to about 5 micrometers. In this way, the loading groove 220 of the above depth can fall into the Micro LED chip 100 with a thickness of about 2.5 micrometers to about 5 micrometers. Make the one-time mass transfer shorter and more efficient.
  • the mass transfer device may further include vacuum components, automatic optical inspection components, manipulators 300, test boards, soldering components, packaging components, etc., according to the specific steps of the mass transfer method. Make corresponding supplements and will not repeat them here.
  • the present disclosure proposes a mass transfer device in which multiple loading slots on the loading surface of the loading mold are designed in different shapes, and one type of loading slot
  • the shape of the Micro LED chip matches the shape of the Micro LED chip of one color.
  • the mass transfer device can transfer the Micro LED chip of multiple colors at once, so that the cycle of the Micro LED component array produced is shorter and more efficient. higher.
  • first”, “second”, and “third” are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first”, “second”, and “third” may explicitly or implicitly include at least one of the features.
  • "a plurality of” means at least two, such as two, three, etc., unless otherwise specifically defined.

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Abstract

本公开提出了Micro LED的巨量转移方法和巨量转移装置。在一个实施例中，一种Micro LED的巨量转移方法，包括：提供Micro LED芯片，该Micro LED芯片包括能够发出第一颜色的第一Micro LED芯片和能够发出不同于第一颜色的第二颜色的第二Micro LED芯片，第一Micro LED芯片的形状不同于第二Micro LED芯片的形状；向装载模具的装载面上一次性倾倒第一和第二Micro LED芯片，装载面上设置有第一和第二类型装载槽，第一类型装载槽具有与第一Micro LED芯片的形状相匹配的第一形状，第二类型装载槽具有与第二Micro LED芯片的形状相匹配的第二形状；以及使装载模具震动，并使第一和第二Micro LED芯片分别落入形状匹配的第一和第二类型装载槽，并倾斜装载模具，使未落入第一和第二类型装载槽的Micro LED芯片离开装载面。

Description

Micro LED的巨量转移方法和巨量转移装置
相关申请的交叉引用
本公开要求于2019年3月29日向中国国家知识产权局递交的中国专利申请201910253178.X的权益，该申请的公开内容通过引用整体并入本公开中。
技术领域
本公开涉及Micro LED制造技术领域，具体的，涉及Micro LED的巨量转移方法和巨量转移装置。
背景技术
微发光二极管(Micro LED)显示面板与传统的液晶显示面板相比，具有分辨率更高、对比度更好、响应时间更快及能耗更低等优点，因而被视为下一代显示技术。Micro LED芯片在制作完成之后，需要将几万至几十万个Micro LED芯片转移到驱动电路板上形成LED阵列，这一过程被称为“巨量转移”。由于Micro LED尺寸较小，如何同时保证转移的效率和良率成为Micro LED产业化过程中的一大难题。
相关技术中，对红蓝绿(RGB)三色Micro LED的巨量转移过程，一般采用分次转移的方式，即一次只能转移一种颜色的Micro LED芯片，利用震动和风力使对应形状的Micro LED芯片落入装载槽。所以，对于形状相同的RGB三色Micro LED芯片，需要通过三次巨量转移工艺，该方法虽工艺简单、良品率高，但效率较低。
所以，目前的Micro LED的巨量转移技术手段仍有待改进。
发明内容
根据本公开的一个方面，提供了一种Micro LED的巨量转移方法，包括：
提供Micro LED芯片，所述Micro LED芯片包括能够发出第一颜色的第一Micro LED芯片和能够发出第二颜色的第二Micro LED芯片，所述第一颜色不同于所述第二颜色，所述第一Micro LED芯片的形状不同于所述第二Micro LED芯片的形状；
向装载模具的装载面上一次性倾倒所述第一和第二Micro LED芯片，所述装载面上设置有第一类型装载槽和第二类型装载槽，所述第一类型装载槽具有与所述第一Micro LED芯片的形状相匹配的第一形状，所述第二类型装载槽具有与所述第二Micro LED芯片的形状相匹配的第二形状；以及
使所述装载模具震动，并使所述第一和第二Micro LED芯片分别落入形状匹配的所述第一和第二类型装载槽，并倾斜所述装载模具，使未落入所述第一和第二类型装载槽的所述Micro LED芯片离开所述装载面。
在一些实施例中，所述第一Micro LED芯片的横截面形状不同于所述第二Micro LED芯片的横截面形状。
在一些实施例中，所述第一和第二Micro LED芯片中的每一个的横截面形状基本呈梯形或三角形。
在一些实施例中，所述第一和第二Micro LED芯片中的每一个Micro LED芯片的纵截面基本呈梯形。
在一些实施例中，所述第一和第二Micro LED芯片中的每一个Micro LED芯片的梯形纵截面的夹角为约75°～约85°。
在一些实施例中，所述第一Micro LED芯片和所述第二Micro LED芯片的比例大致为1∶1。
在示例性实施例中，所述Micro LED芯片还包括能够发出第三颜色的第三Micro LED芯片，所述第三颜色与所述第一颜色和所述第二颜色均不相同，所述第三Micro LED芯片的形状与所述第一Micro LED芯片的形状和所述第二Micro LED芯片的形状均不相同；所述装载模具的所述装载面上设置有第三类型装载槽，所述第三类型装载槽具有与所述第三Micro LED芯片的形状相匹配的第三形状。
在示例性实施例中，所述第一Micro LED芯片的横截面形状与所述第二Micro LED芯片的横截面形状不相同，所述第一Micro LED芯片的横截面形状所述第一Micro LED芯片的横截面形状与所述第二Micro LED芯片的横截面形状均不相同。
在示例性实施例中，所述第一、第二和第三Micro LED芯片中的每一个的横截面形状基本呈梯形或三角形。
在示例性实施例中，所述第一Micro LED芯片的横截面形状呈等腰梯形，所述第二Micro LED芯片的横截面形状呈左直角梯形，所述第三Micro LED芯片的横截面形状呈右直角梯形。
在示例性实施例中，所述第一、第二和第三Micro LED芯片中的每一个Micro LED芯片的纵截面基本呈梯形。
在示例性实施例中，所述第一、第二和第三Micro LED芯片中的每一个Micro LED芯片的梯形纵截面的夹角为约75°～约85°。
在示例性实施例中，所述第一Micro LED芯片、所述第二Micro LED芯片和所述 第三Micro LED芯片的比例大致为1∶1∶1。
在示例性实施例中，所述装载模具倾斜的角度为约15°～约30°。
在示例性实施例中，所述巨量转移方法还可以包括：用自动光学检查设备检测装载面，并用机械手向空置的装载槽内填入相应形状的Micro LED芯片；测试装载模具上的Micro LED芯片的元器件功能，并用机械手移除不良的Micro LED芯片，再填入相应形状的良品的Micro LED芯片；和将带有电路的基板与装载模具上的Micro LED芯片对位焊接，并进行封装。
根据本公开的另一个方面，提供了一种Micro LED的巨量转移装置，包括：
装载模具，所述装载模具的装载面上设置有不同类型的装载槽，不同类型的所述装载槽的形状不同，且一个类型的所述装载槽的形状适于与一种颜色的Micro LED芯片的形状相匹配；以及
震动源，所述震动源与所述装载模具接触。
在一些实施例中，每一所述装载槽的底面设有真空吸附孔。
在一些实施例中，每一所述装载槽的深度为约2.5微米～约5微米。
本公开的附加方面和优点将在下面的描述中部分给出，部分将从下面的描述中变得明显，或通过本公开的实践了解到。
附图说明
图1是本公开一个实施例的Micro LED的巨量转移方法的流程示意图；
图2是本公开一个实施例的三种颜色的Micro LED芯片的仰视结构示意图；
图3是本公开另一个实施例的三种颜色的Micro LED芯片的仰视结构示意图；
图4是本公开一个实施例的Micro LED芯片与装载模具的装载槽形状匹配的示意图；
图5a是本公开一个实施例的Micro LED芯片的仰视结构示意图；
图5b是图5a中的Micro LED芯片沿线A-A’的局部截面结构示意图；
图6是本公开一个实施例的装载模具的俯视结构示意图；以及
图7是本公开一个实施例的机械手填补工艺的示意图。
具体实施方式
下面详细描述本公开的实施例，本技术领域人员会理解，下面实施例旨在用于解 释本公开，而不应视为对本公开的限制。除非特别说明，在下面实施例中没有明确描述具体技术或条件的，本领域技术人员可以按照本领域内的常用的技术或条件或按照产品说明书进行。
本公开是基于发明人的下列发现而完成的：
本公开的发明人在研究过程中，提出一种Micro LED的巨量转移方法，不同颜色的Micro LED芯片被设计成具有不同的形状，并且，装载模具上设有多种类型装载槽，每种类型装载槽具有与一种颜色的Micro LED芯片的形状相匹配的对应形状，如此，每个颜色的Micro LED芯片只会被装载到具有对应形状的一种类型装载槽中，可一次性实现多种不同颜色的Micro LED芯片的巨量转移过程，从而在成倍地提高转移效率的同时，还能保证较高的转移良率。
根据本公开的发明构思，提供了一种Micro LED的巨量转移方法，包括：提供Micro LED芯片，所述Micro LED芯片包括能够发出第一颜色的第一Micro LED芯片和能够发出第二颜色的第二Micro LED芯片，所述第一颜色不同于所述第二颜色，所述第一Micro LED芯片的形状不同于所述第二Micro LED芯片的形状；向装载模具的装载面上一次性倾倒所述第一和第二Micro LED芯片，所述装载面上设置有第一类型装载槽和第二类型装载槽，所述第一类型装载槽具有与所述第一Micro LED芯片的形状相匹配的第一形状，所述第二类型装载槽具有与所述第二Micro LED芯片的形状相匹配的第二形状；以及使所述装载模具震动，并使所述第一和第二Micro LED芯片分别落入形状匹配的所述第一和第二类型装载槽，并倾斜所述装载模具，使未落入所述第一和第二类型装载槽的所述Micro LED芯片离开所述装载面。进一步地，所述第一Micro LED芯片的横截面形状不同于所述第二Micro LED芯片的横截面形状。示例性地，所述第一和第二Micro LED芯片中的每一个的横截面形状基本呈梯形或三角形。进一步地，所述第一和第二Micro LED芯片中的每一个Micro LED芯片的纵截面基本呈梯形。并且，所述第一和第二Micro LED芯片中的每一个Micro LED芯片的梯形纵截面的夹角为约75°～约85°。其中，所述第一Micro LED芯片和所述第二Micro LED芯片的比例大致为1∶1。所述装载模具倾斜的角度为约15°～约30°。根据本公开的一个方面，提出了一种Micro LED的巨量转移方法。根据本公开的实施例，参考图1，巨量转移方法包括：
S100：提供Micro LED芯片，所述Micro LED芯片包括能够发出第一颜色的第一Micro LED芯片和能够发出第二颜色的第二Micro LED芯片，所述第一颜色不同于所述第二颜色，所述第一Micro LED芯片的形状不同于所述第二Micro LED芯片的形状。
在该步骤中，提供多种颜色的Micro LED芯片100，且能够发出第一颜色的Micro LED芯片110的形状不同于能够发出第二颜色的第二Micro LED芯片120的形状，如此，可使不同颜色的Micro LED芯片100的形状不同。
根据本公开的实施例，第一Micro LED芯片110的横截面形状不同于第二Micro LED芯片120的横截面形状。Micro LED芯片100的具体横截面形状，本领域技术人员可根据Micro LED元器件阵列的具体排列方式进行相应地设计，具体例如三角形、四边形等均可。在本公开的一些实施例中，Micro LED芯片100的横截面形状可呈梯形，例如，上下左右都是非对称的梯形，可使Micro LED芯片100即使翻转或旋转后的形状都存在差异性，从而能使不同颜色的Micro LED芯片100分别与装载模具200上的不同类型的装载槽220的匹配性更高。
根据本公开的实施例，Micro LED芯片100的具体颜色数也不受特别的限制，本领域技术人员可根据Micro LED元器件阵列的显色设计进行相应地设计。
在本公开的示例性实施例中，参考图2，Micro LED芯片100可包括第一Micro LED芯片110(例如红色R)、第二Micro LED芯片120(例如绿色G)和第三Micro LED芯片130(例如蓝色B)。第一Micro LED芯片110的形状和第二Micro LED芯片120的形状不相同，且第三Micro LED芯片130的形状与第一Micro LED芯片110的形状和第二Micro LED芯片120的形状均不相同。在如图所示的示例性实施例中，第一Micro LED芯片110的横截面形状可呈等腰梯形，第二Micro LED芯片120的横截面形状可呈左直角梯形，而第三Micro LED芯片130的横截面形状可呈右直角梯形。如此，可使三种颜色的Micro LED芯片形状差异性大。
在一些具体示例中，Micro LED芯片100的纵截面可呈矩形，如此，上下等宽的棱柱状的Micro LED芯片100，后续落入装载模具200上的装载槽220中不容易再脱落出，即使后续大角度倾斜装载模具，落入装载槽220中的Micro LED芯片100不容易脱出。
在另一些具体示例中，参考图3，Micro LED芯片100的纵截面也可呈梯形，如此，参考图4，采用上大下小的棱台状的Micro LED芯片100，只能落入形状匹配的装载槽220。具体的，在一种Micro LED芯片只能落入与其形状匹配的对应类型装载槽而不能落入与其形状不匹配的其它类型装载槽例如(第一Micro LED芯片110只能落入第一类型装载槽221而无法落入第二类型装载槽222和第三类型装载槽223)的基础上，呈左右对称的等腰梯形的第一Micro LED芯片110，在翻转后也无法落入第一装载槽221中，而且，呈镜面对称的第二Micro LED芯片120和第三Micro LED芯片130， 在翻转后也无法落入彼此的装载槽中，从而可提升制作的良品率。进一步地，梯形纵截面的夹角可以为约75°～约85°，如此，采用上述夹角范围的棱台状的Micro LED芯片100落入匹配的装载槽220的概率更高。并且，参考图4，Micro LED芯片100落入后还可被装载槽220槽底的真空吸附孔230吸附住，后续的倾斜也不会使落入载槽220的Micro LED芯片100容易脱落。
根据本公开的示例性实施例，参考图5a和图5b，每个Micro LED芯片100可包括氮化镓(GaN)外延层101、N型GaN层102、InGaN/GaN发光层103、P型GaN层104、Ni/Au透明导电层105、N型电极106、P型电极107和颜色层108。具体的，N型GaN层102设置在外延层101的一个表面上，发光层103设置在N型GaN层102的部分表面上，P型GaN层104设置在发光层103的一个表面上，透明导电层105设置在P型GaN层104的部分表面上，N型电极106设置在N型GaN层102的部分表面上，P型电极107设置在透明导电层105的部分表面上，而颜色层108覆盖N型电极106、部分的N型GaN层102、部分的P型GaN层104和部分的透明导电层105。如此，通过光刻、清洗、刻蚀、电极制作、钝化、抛光、涂色和切割等工艺，可制作出结构和功能都更完善的Micro LED芯片100。需要说明的是，关于每个Micro LED芯片100的由上述各层构成的层叠结构，每个Micro LED芯片100的横截面是大致平行于各个层的截面，而每个Micro LED芯片100的纵截面是大致垂直于各个层的截面。
S200：向装载模具的装载面上一次性倾倒第一和第二Micro LED芯片。
在该步骤中，向装载模具200的装载面210上，一次性倾倒过量的Micro LED芯片100，且参考图6，装载面210上的装载槽220(包括第一类型装载槽和第二类型装载槽)的形状也不同，第一类型装载槽具有与第一Micro LED芯片110的形状相匹配的第一形状，第二类型装载槽具有与第二Micro LED芯片120的形状相匹配的第二形状，即一种类型装载槽220的形状与一种颜色的Micro LED芯片100的形状相匹配。需要说明的是，本文中的“匹配”具体不仅是指装载槽220的形状与Micro LED芯片100的形状相对应，且装载槽220与Micro LED芯片100还需是凹凸配合的。
在本公开的示例性实施例中，对于三种颜色的Micro LED芯片100，参考图6，装载槽220也可包括第一类型装载槽221、第二类型装载槽222和第三类型装载槽223，且第一类型装载槽221的形状只与第一Micro LED芯片110的形状相匹配，即只有第一Micro LED芯片110能落入第一类型装载槽221，而第二Micro LED芯片120和第三Micro LED芯片130都不能落入第一类型装载槽221，此外，第二类型装载槽222的形状只与第二Micro LED芯片120的形状相匹配，第三类型装载槽223的形状只与 第三Micro LED芯片130的形状相匹配。如此，通过设计不同形状的多种类型装载槽220，可使装载模具200一次性巨量转移三种不同颜色的Micro LED芯片100。
在本公开的一些实施例中，第一Micro LED芯片110、第二Micro LED芯片120和第三Micro LED芯片130的比例可以大致为1∶1∶1，如此，对于图6所示的R/G/B顺序阵列排列的装载模具200，可使三种颜色的Micro LED芯片100的比例更均衡，从而使三种颜色的Micro LED芯片100分别落入各自装载槽220的概率相等。
S300：使所述装载模具震动，并使第一和第二Micro LED芯片落入到形状匹配的第一和第二类型装载槽中，并倾斜装载模具，使未落入第一和第二类型装载槽的Micro LED芯片离开装载面。
在该步骤中，通过震动使散落在装载面210上的Micro LED芯片100落入到装载槽220中，并倾斜装载模具200，使未落入装载槽220中的Micro LED芯片100离开装载面210。在本公开的一些实施例中，落入到装载槽220中的Micro LED芯片100还可被装载槽220槽底的真空吸附孔230吸附住，倾斜装载模具200，也不会使落入载槽220的Micro LED芯片100容易脱落。
在本公开的一些实施例中，装载模具倾斜的角度可以为约15°～约30°，如此，倾斜上述小角度范围的装载模具200，即可使未落入装载槽220中的Micro LED芯片100都离开装载面210，从而使装载面210上不会残留未落入装载槽220中的Micro LED芯片100。
在本公开的一些实施例中，如图1所示，在步骤S300之后，该巨量转移方法还可包括：
S400：用自动光学检查设备检测装载面，并用机械手300向空置的装载槽内填入相应形状的Micro LED芯片。
在该步骤中，自动光学检查设备检测装载面210，并参考图7，用机械手300向空置的装载槽220内填入相应形状的Micro LED芯片100。
S500：测试装载模具上的Micro LED芯片的元器件功能，并用机械手300移除不良的Micro LED芯片，再填入相应形状的良品的Micro LED芯片。
在该步骤中，将步骤S400填满Micro LED芯片100的装载模具200接到测试版上，测试元器件的功能，再利用机械手300将不良的Micro LED芯片100移除，并填入良品的Micro LED芯片100，如此，完成焊接前的检测。
S600：将带有电路的基板与装载模具上的Micro LED芯片对位焊接，并进行封装。
在该步骤中，将制作有像素驱动电路的互补金属氧化物半导体(CMOS)或薄膜 晶体管(TFT)的基板，与步骤S500检测后的Micro LED芯片100进行对位焊接，并进行封装，如此，可实现每一个像素点的定址控制和单独驱动，并且，该制作方法可通过一次巨量转移、一次焊接和封装，即可将三种以上不同样色的Micro LED芯片100制作在Micro LED基板上。
综上所述，根据本公开的实施例，本公开提出了一种巨量转移方法，先将不同颜色的Micro LED芯片被设计成不同的形状，再将装载模具上的多种类型装载槽也设计成不同的形状，如此，可一次性实现至少两种颜色的Micro LED芯片的巨量转移过程，并且，装载模具上的一种类型装载槽的形状只与一种颜色的Micro LED芯片的形状相匹配，从而在成倍地提高转移效率的同时，还能保证较高的转移良率。
在本公开的另一个方面，本公开提出了一种Micro LED的巨量转移装置。
根据本公开的实施例，该巨量转移装置包括装载模具200和震动源；其中，装载模具200的装载面210上设置有不同类型的装载槽220，不同类型的装载槽220的形状不同，且一个类型的装载槽200的形状适于与一种颜色的Micro LED芯片100的形状相匹配；震动源与装载模具接触。
在本公开的一些实施例中，该巨量转移装置还可包括吹风装置，且吹风装置设置在装载模具的一侧。如此，风力可以辅助震动使Micro LED芯片更快地落入装载槽200中。
在本公开的一些实施例中，装载槽220的底面可以设有真空吸附孔230。如此，棱台状的Micro LED芯片100落入装载槽220中后可被真空吸附住，从而倾斜装载模具200也不会出现Micro LED芯片100从装载槽220中脱落的问题。
在本公开的一些实施例中，装载槽220的深度可以为约2.5微米～约5微米，如此，上述深度的装载槽220能够落入约2.5微米～约5微米厚的Micro LED芯片100，从而使一次性巨量转移的耗时更短、转移效率更高。
根据本公开的实施例，该巨量转移装置还可包括真空部件、自动光学检查部件、机械手300、测试版、焊接部件、封装部件等等，本领域技术人员可根据巨量转移方法的具体步骤进行相应地补充，在此不再赘述。
综上所述，根据本公开的实施例，本公开提出了一种巨量转移装置，其装载模具的装载面上的多种装类型载槽被设计成不同的形状，且一种类型装载槽的形状与一种颜色的Micro LED芯片的形状相匹配，如此，该巨量转移装置可实现一次转移多种颜色的Micro LED芯片，从而使制作出的Micro LED元器件阵列的周期更短、效率更高。
在本公开的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”、“轴向”、“径向”、“周向”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本公开和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本公开的限制。
此外，术语“第一”、“第二”、“第三”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”、“第三”的特征可以明示或者隐含地包括至少一个该特征。在本公开的描述中，“多个”的含义是至少两个，例如两个，三个等，除非另有明确具体的限定。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本公开的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。
尽管上面已经示出和描述了本公开的实施例，可以理解的是，上述实施例是示例性的，不能理解为对本公开的限制，本领域的普通技术人员在本公开的范围内可以对上述实施例进行变化、修改、替换和变型。

Claims (18)

  1. 一种Micro LED的巨量转移方法，包括：
    提供Micro LED芯片，所述Micro LED芯片包括能够发出第一颜色的第一Micro LED芯片和能够发出第二颜色的第二Micro LED芯片，所述第一颜色不同于所述第二颜色，所述第一Micro LED芯片的形状不同于所述第二Micro LED芯片的形状；
    向装载模具的装载面上一次性倾倒所述第一和第二Micro LED芯片，所述装载面上设置有第一类型装载槽和第二类型装载槽，所述第一类型装载槽具有与所述第一Micro LED芯片的形状相匹配的第一形状，所述第二类型装载槽具有与所述第二Micro LED芯片的形状相匹配的第二形状；以及
    使所述装载模具震动，并使所述第一和第二Micro LED芯片分别落入形状匹配的所述第一和第二类型装载槽，并倾斜所述装载模具，使未落入所述第一和第二类型装载槽的所述Micro LED芯片离开所述装载面。
  2. 根据权利要求1所述的巨量转移方法，其中，所述第一Micro LED芯片的横截面形状不同于所述第二Micro LED芯片的横截面形状。
  3. 根据权利要求2所述的巨量转移方法，其中，所述第一和第二Micro LED芯片中的每一个的横截面形状基本呈梯形或三角形。
  4. 根据权利要求2所述的巨量转移方法，其中，所述第一和第二Micro LED芯片中的每一个Micro LED芯片的纵截面基本呈梯形。
  5. 根据权利要求4所述的巨量转移方法，其中，所述第一和第二Micro LED芯片中的每一个Micro LED芯片的梯形纵截面的夹角为约75°～约85°。
  6. 根据权利要求1所述的巨量转移方法，其中，所述第一Micro LED芯片和所述第二Micro LED芯片的比例大致为1∶1。
  7. 根据权利要求1所述的巨量转移方法，其中，所述Micro LED芯片还包括能够发出第三颜色的第三Micro LED芯片，所述第三颜色与所述第一颜色和所述第二颜色均不相同，所述第三Micro LED芯片的形状与所述第一Micro LED芯片的形状和所述第二Micro LED芯片的形状均不相同；所述装载模具的所述装载面上设置有第三类型装载槽，所述第三类型装载槽具有与所述第三Micro LED芯片的形状相匹配的第三形状。
  8. 根据权利要求7所述的巨量转移方法，其中，所述第一Micro LED芯片的横截面形状与所述第二Micro LED芯片的横截面形状不相同，所述第一Micro LED芯片的 横截面形状所述第一Micro LED芯片的横截面形状与所述第二Micro LED芯片的横截面形状均不相同。
  9. 根据权利要求7所述的巨量转移方法，其中，所述第一、第二和第三Micro LED芯片中的每一个的横截面形状基本呈梯形或三角形。
  10. 根据权利要求7所述的巨量转移方法，其中，所述第一Micro LED芯片的横截面形状呈等腰梯形，所述第二Micro LED芯片的横截面形状呈左直角梯形，所述第三Micro LED芯片的横截面形状呈右直角梯形。
  11. 根据权利要求7所述的巨量转移方法，其中，所述第一、第二和第三Micro LED芯片中的每一个Micro LED芯片的纵截面基本呈梯形。
  12. 根据权利要求11所述的巨量转移方法，其中，所述第一、第二和第三Micro LED芯片中的每一个Micro LED芯片的梯形纵截面的夹角为约75°～约85°。
  13. 根据权利要求7所述的巨量转移方法，其中，所述第一Micro LED芯片、所述第二Micro LED芯片和所述第三Micro LED芯片的比例大致为1∶1∶1。
  14. 根据权利要求1所述的巨量转移方法，其中，所述装载模具倾斜的角度为约15°～约30°。
  15. 根据权利要求1所述的巨量转移方法，还包括：
    用自动光学检查设备检测装载面，并用机械手向空置的装载槽内填入相应形状的Micro LED芯片；
    测试装载模具上的Micro LED芯片的元器件功能，并用机械手移除不良的Micro LED芯片，再填入相应形状的良品的Micro LED芯片；和
    将带有电路的基板与装载模具上的Micro LED芯片对位焊接，并进行封装。
  16. 一种Micro LED的巨量转移装置，包括：
    装载模具，所述装载模具的装载面上设置有不同类型的装载槽，不同类型的所述装载槽的形状不同，且一个类型的所述装载槽的形状适于与一种颜色的Micro LED芯片的形状相匹配；以及
    震动源，所述震动源与所述装载模具接触。
  17. 根据权利要求16所述的巨量转移装置，其中，每一所述装载槽的底面设有真空吸附孔。
  18. 根据权利要求16所述的巨量转移装置，其中，每一所述装载槽的深度为约2.5微米～约5微米。
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