WO2020186456A1 - 转印方法和转印装置 - Google Patents

转印方法和转印装置 Download PDF

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Publication number
WO2020186456A1
WO2020186456A1 PCT/CN2019/078731 CN2019078731W WO2020186456A1 WO 2020186456 A1 WO2020186456 A1 WO 2020186456A1 CN 2019078731 W CN2019078731 W CN 2019078731W WO 2020186456 A1 WO2020186456 A1 WO 2020186456A1
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Prior art keywords
transfer
substrate
position information
target
information
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PCT/CN2019/078731
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English (en)
French (fr)
Inventor
栾兴龙
冯京
李付强
王志冲
刘鹏
黎午升
刘春景
Original Assignee
京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Application filed by 京东方科技集团股份有限公司, 鄂尔多斯市源盛光电有限责任公司 filed Critical 京东方科技集团股份有限公司
Priority to PCT/CN2019/078731 priority Critical patent/WO2020186456A1/zh
Priority to US16/649,801 priority patent/US11538786B2/en
Priority to CN201980000322.7A priority patent/CN110088920B/zh
Publication of WO2020186456A1 publication Critical patent/WO2020186456A1/zh

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/799—Apparatus for disconnecting
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • H—ELECTRICITY
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    • H01L21/681—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
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    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
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    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
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    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/03—Manufacturing methods
    • H01L2224/03001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
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    • H01L2224/95001—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips involving a temporary auxiliary member not forming part of the bonding apparatus, e.g. removable or sacrificial coating, film or substrate
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    • H01L2224/951—Supplying the plurality of semiconductor or solid-state bodies
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    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

Definitions

  • At least one embodiment of the present disclosure relates to a transfer method and a transfer device.
  • At least one embodiment of the present disclosure provides a transfer method and a transfer device.
  • At least one embodiment of the present disclosure provides a transfer method, including: transferring a plurality of devices formed on an original substrate to a transfer substrate; obtaining first position information of the positions of the plurality of devices on the transfer substrate Obtain the second position information of the corresponding position of the device to be transferred on the target substrate; compare the first position information with the second position information to obtain the first target position information recording the first transfer position; and transfer the The substrate is aligned with the target substrate, and at least part of the devices on the transfer substrate corresponding to the first transfer position are simultaneously irradiated with a fixed-point laser according to the first target position information to irradiate the at least part of the devices Transfer from the transfer substrate to the target substrate.
  • performing fixed-point laser irradiation includes: inputting the first target position information into a laser printer having a spatial light modulation component, so that the spatial light modulation component modulates the laser printer and the transfer substrate At least part of the devices corresponding to the first transfer position are simultaneously irradiated with laser.
  • comparing the first location information with the second location information to obtain the first target location information includes: if the first location information includes all locations recorded in the second location information, then The first target location information is the second location information.
  • the first position information includes all positions recorded in a plurality of the second position information
  • the plurality of first target position information is a plurality of the second position information
  • the transfer substrate is configured to Each of the target substrates is aligned, and then the devices on the transfer substrate are transferred to the plurality of target substrates respectively according to the plurality of first target position information.
  • the first location information includes multiple sub-location information
  • comparing the first location information with the second location information to obtain the first target location information further includes: if the first location information in the multiple sub-location information is A sub-location information includes only part of the location recorded in the second location information, and the second location information is divided into a first information area covered by the first sub-location information and location information that is omitted by the first sub-location information In the second information area, the first target location information is the location information of the first information area.
  • the transfer method further includes: comparing the second sub-position information in the plurality of sub-position information with the position information in the second information area to obtain the second target position information recording the second transfer position, wherein, If the second sub-location information includes all the locations recorded in the second information area, the location information in the second information area is the second target location information; according to the second target location information, At least part of the devices on the transfer substrate corresponding to the second transfer position are simultaneously irradiated with a fixed-point laser.
  • obtaining the first position information includes: performing optical scanning on the transfer substrate to obtain position information of the plurality of devices on the transfer substrate.
  • the laser pulse opening time of the laser printer is within the opening time of the spatial light modulation component.
  • the transfer substrate includes a transparent material layer and an adhesive layer that are stacked, and the device is located on a side of the adhesive layer away from the transparent material layer.
  • a buffer layer is provided on one side of the target substrate where the device is placed, and the orthographic projection of the buffer layer on the target substrate and the orthographic projection of the device on the target substrate do not overlap.
  • the device before forming the device, it includes: forming a sacrificial layer on the original substrate, and patterning the sacrificial layer to form a plurality of sacrificial layer blocks separated from each other; forming the device includes: forming a sacrificial layer on the sacrificial layer Forming a material layer for forming the device on a side of the block away from the original substrate, the material layer including a portion on the sacrificial layer block and a portion of the space between adjacent sacrificial layer blocks; The material layer is patterned to form the device on the sacrificial layer block and a connecting portion connecting two adjacent devices, the connecting portion including a portion on the sacrificial layer block and adjacent The part of the space between the sacrificial layer blocks; the sacrificial layer is removed.
  • forming the device includes: forming a sacrificial layer on the original substrate; forming the device on the side of the sacrificial layer away from the original substrate, and forming the device includes: patterning the sacrificial layer Layer such that the orthographic projection of the sacrificial layer on the original substrate is completely within the orthographic projection of the device on the original substrate.
  • the device is a micro light emitting diode, and the maximum dimension of the micro light emitting diode in a direction parallel to the original substrate is 5-20 ⁇ m.
  • At least one embodiment of the present disclosure provides a transfer device, including: a transfer substrate configured to transfer a plurality of devices formed on an original substrate to a target substrate; and a laser printer, including a spatial light modulation component, configured to According to the comparison result of the first position information of the plurality of devices on the transfer substrate and the second position information of the devices to be transferred on the target substrate, the laser printer is modulated so that the laser The printer simultaneously performs fixed-point laser irradiation on at least part of the devices on the transfer substrate.
  • the transfer device further includes: a data processor, electrically connected to the spatial light modulation component, and configured to compare the first position information with the second position information to obtain transmission to the spatial light modulation
  • the target position information of the component, and the spatial light modulation component modulates the laser printer according to the target position information to simultaneously perform fixed-point laser irradiation on the at least part of the devices at the transfer position on the transfer substrate.
  • the spatial light modulation component is a digital micromirror array.
  • the digital micromirror array includes a plurality of micromirrors, each of the micromirrors has a square shape in a plane parallel to the transfer substrate and has a size of 5.6*5.6 ⁇ m-12*12 ⁇ m.
  • the transfer device further includes a zoom lens located on the side of the spatial light modulation component facing the transfer substrate.
  • FIG. 1A is a schematic flowchart of a transfer method provided by an embodiment of the disclosure.
  • FIG. 1B is a schematic diagram of the transfer process according to the transfer method shown in FIG. 1A;
  • FIGS. 2A and 2B are schematic structural diagrams of a device formed on a raw substrate provided by an example of an embodiment of the present disclosure
  • 3A-3C are schematic structural diagrams of a device formed on an original substrate provided by another example of an embodiment of the present disclosure.
  • 4A is a schematic diagram of transferring a device from an original substrate to a transfer substrate in an embodiment of the present disclosure
  • 4B and 4C are schematic diagrams of a transfer substrate provided by an embodiment of the disclosure.
  • 5A-5C are schematic diagrams of first location information, second location information, and first target location information provided by an example of an embodiment of the present disclosure
  • 6A is a schematic diagram of a fixed-point transfer process provided by an embodiment of the present disclosure.
  • FIG. 6B is a schematic diagram of a partial structure of the digital micromirror array shown in FIG. 6A;
  • FIG. 6C is a schematic cross-sectional view of the digital micromirror array shown in FIG. 6B taken along line II;
  • 6D is a timing diagram of the laser pulse and the digital micro-mirror array provided by an embodiment of the disclosure.
  • FIG. 7 is a schematic diagram of a transfer process of a device provided by an embodiment of the disclosure.
  • FIGS. 8A to 8C are schematic diagrams of first location information, second location information, and first target location information provided by another example of an embodiment of the present disclosure.
  • FIG. 9A is a schematic diagram of another part on the transfer substrate provided by an example of an embodiment of the present disclosure.
  • FIG. 9B is a schematic diagram of the second sub-position information of the device on the transfer substrate shown in FIG. 9A;
  • FIGS. 10A-10C are schematic diagrams of first location information and two second location information provided by another example of an embodiment of the present disclosure, respectively;
  • FIG. 11 is a schematic diagram of second location information provided by another example of an embodiment of the present disclosure.
  • FIG. 12 is a schematic diagram of a transfer device provided by another embodiment of the disclosure.
  • MTP mass transfer printing
  • the current mass transfer technology includes the Micro-Transfer-Printing technology invented by X-Celeprint Ltd., the technology for making patterned transfer substrates to achieve transfer, and laser scanning technology.
  • the micro-transfer technology realizes the pick-up and placement of micro-nano devices by dynamically controlling the adhesion of elastic stamps. That is, using an elastic stamp combined with a high-precision motion control print head, selectively pick-up a large array of micro-devices and print them on the target substrate. By changing the speed of the print head, you can selectively Adjust the adhesive force between the elastic stamp and the printed device, and finally control the assembly process. The faster transfer speed can realize the pick-up of micro-nano devices, and the slower transfer speed can realize the placement of micro-nano devices.
  • the embodiments of the present disclosure provide a transfer method and a transfer device.
  • the transfer method includes: transferring a plurality of devices formed on an original substrate to a transfer substrate; obtaining first position information of the positions of the plurality of devices on the transfer substrate; obtaining a second position corresponding to the position of the device to be transferred on the target substrate Information; compare the first position information with the second position information to obtain the first target position information recording the first transfer position; and align the transfer substrate with the target substrate, and compare the AND on the transfer substrate according to the first target position information At least part of the devices corresponding to the first transfer position are simultaneously irradiated with a fixed-point laser to transfer at least part of the devices from the transfer substrate to the target substrate.
  • a large number of micro-nano devices can be quickly transferred to the target substrate, which not only reduces the production cost, but also can accurately place the micro-nano devices at the designated position on the target substrate according to requirements, thereby speeding up The industrialization process of MircoLED display panel.
  • FIG. 1A is a schematic flowchart of the transfer method provided in this embodiment
  • FIG. 1B is a schematic flowchart of the transfer process according to the transfer method shown in FIG. 1A.
  • the transfer method includes the following specific steps.
  • S101 Transfer multiple devices formed on the original substrate to the transfer substrate.
  • S102 Acquire first position information of the positions of multiple devices on the transfer substrate.
  • S103 Acquire second position information of the corresponding position of the device to be transferred on the target substrate.
  • S104 Compare the first position information with the second position information to obtain first target position information recording the first transfer position.
  • S105 Align the transfer substrate with the target substrate, and simultaneously perform fixed-point laser irradiation on at least part of the devices on the transfer substrate corresponding to the first transfer position according to the first target position information to transfer at least part of the devices from the transfer substrate to the target On the substrate.
  • FIGS. 2A and 2B are schematic structural diagrams of a device formed on a raw substrate provided by an example of this embodiment.
  • Fig. 2B is a schematic cross-sectional view taken along line AA shown in Fig. 2A.
  • an original substrate 110 is provided.
  • the material of the original substrate 110 may be silicon, sapphire, silicon carbide, or the like.
  • the shape of the original substrate 110 may be circular, and its diameter may be 6 inches, 9 inches, or 12 inches.
  • FIG. 2A schematically shows that the shape of the original substrate is a circle, but it is not limited to this, and other shapes such as a rectangle may also be used.
  • a plurality of devices 101 are formed on the original substrate 110.
  • a material for forming the device 101 may be formed on the original substrate 110 by epitaxial growth or the like, and then a plurality of devices 101 may be formed by a photolithography process.
  • a sacrificial layer 102 is formed on the original substrate 110.
  • the sacrificial layer 102 is patterned so that the sacrificial layer 102 is only located between the device 101 and the original substrate 110, that is, the orthographic projection of the sacrificial layer 102 on the original substrate 110 is on the device
  • the middle part of 101 is in the orthographic projection of the original substrate 110.
  • the remaining part of the sacrificial layer 102 is used to maintain the connection between the device 101 and the original substrate 110.
  • the sacrificial layer 102 is etched, only the part located between the center of the bottom of the device 101 and the original substrate 110 remains in order to make the device 101 easily peeled from the original substrate 110.
  • FIGS. 3A to 3C are schematic structural diagrams of a device formed on an original substrate provided in another example of this embodiment.
  • 3C is a schematic cross-sectional view taken along line AA shown in FIG. 3A.
  • FIG. 3B before forming the device 101, it includes forming a sacrificial layer 102 on the original substrate 110, and patterning the sacrificial layer 102 to form a plurality of sacrificial layer blocks 1020 separated from each other.
  • the plurality of sacrificial layer blocks 1020 arranged in an array along the X direction and the Y direction are spaced apart.
  • forming the device 101 includes: forming a material layer 1010 for forming the device 101 on the side of the sacrificial layer block 1020 away from the original substrate 110, and the material layer 1010 includes the sacrificial layer block 1020.
  • the material layer 1010 is patterned to form the device 101 on the sacrificial layer block 1020 and the connecting portion 1011 connecting two adjacent devices 101, the connecting portion 1011 includes a portion located on the sacrificial layer block 1020 and a portion located in the space between adjacent sacrificial layer blocks 1020; all the sacrificial layer 102 is etched away, that is, all the sacrificial layer blocks 1020 are etched away, so that a plurality of The device 101 is connected to the original substrate 110 through the connection portion 1011.
  • an ultraviolet absorbing layer silicon nitride
  • a reflective layer aluminum or molybdenum, etc.
  • the device 101 in this embodiment may be a micro LED.
  • the maximum dimension of the micro LED in a direction parallel to the original substrate is 5-20 ⁇ m.
  • the micro-light-emitting diode has good ultraviolet tolerance, and the formation of the above-mentioned ultraviolet absorption layer or reflection layer may not be considered.
  • the material layer 1010 may include an anode layer, a light-emitting layer, and a cathode layer. Multiple micro light-emitting diodes 101 can be formed by patterning the material layer 1010.
  • the connecting portion 1011 therebetween has a small width, so that the device 101 can be easily peeled from the original substrate 110.
  • FIG. 4A is a schematic diagram of transferring a device from an original substrate to a transfer substrate
  • FIG. 4B and FIG. 4C are schematic diagrams of the transfer substrate provided in this embodiment
  • FIG. 4C is a schematic diagram of the planar structure of the transfer substrate shown in FIG. 4B.
  • a plurality of devices 101 are transferred onto a transfer substrate 210. Since the device 101 is located on the side of the transfer substrate 210 facing the original substrate 110, the device 101 on the transfer substrate 210 shown in FIG. 4A is shown in a dashed frame.
  • the transfer substrate 210 includes a transparent material layer 211 and an adhesion layer 212, and the device 101 is located on the adhesion layer 212.
  • the material of the transparent material layer 211 includes a material with high ultraviolet light transmittance such as quartz.
  • the material of the adhesion layer 212 includes polydimethylsiloxane (PDMS) and the like.
  • the transfer substrate 210 includes at least four alignment marks 214, and an area 213 within the alignment mark 214 is an area for transferring the device 101.
  • the size of the transfer substrate 210 can be adjusted according to the size of the device 101 and the transfer efficiency.
  • FIG. 4C schematically shows that the alignment marks are located at the four vertices of the area for the transfer device 101, but it is not limited to this, and may also be located on the edge of the area or at a position other than the transfer device in the area.
  • Figures 5A-5C are schematic diagrams of the first location information, the second location information, and the first target location information provided by an example of this embodiment.
  • first position information 201 of a plurality of devices 101 on the transfer substrate 210 is acquired.
  • Obtaining the first position information 201 includes: performing optical scanning on the transfer substrate 210 to obtain position information of the plurality of devices 101 on the transfer substrate 210.
  • optical inspection equipment such as automatic optical inspection equipment, AOI equipment
  • FIG. 5A may be illustrated as all of the first location information, or may be illustrated as the first sub-location information among multiple sub-location information included in the first location information.
  • the first location information 201 may be a data file, including txt, csv, xls, doc and other formats.
  • the first position information 201 includes position information of the device 101 transferred to the transfer substrate 210, or the first position information 201 includes at least the position information of the device 101 not transferred to the transfer substrate 210.
  • the location of the device on the transfer substrate can be converted into the location of a certain point in the coordinate system of the device on the transfer substrate. Therefore, the first position information 201 is the coordinate location information of the device. As shown in FIG. 5A, the coordinates of the first device in the first row are (1, A), and the coordinates of the second device in the fifth row are (5, B), etc., and each device corresponds to a coordinate.
  • the second location information 301 may be information such as the design layout location on the target substrate, that is, the location recorded in the second location information 301 is a location that has been designed according to device requirements.
  • the position of the device to be transferred corresponding to the target substrate can be converted to the position of a certain point in the coordinate system on the target substrate. Therefore, the second position information 301 is the coordinate information of the device to be transferred, and the position on the transfer substrate
  • the coordinate system and the coordinate system on the target substrate are the same coordinate system.
  • the "same coordinate system” here means that after the transfer substrate is aligned with the target substrate, the orthographic projection of the coordinate system on the transfer substrate on the target substrate coincides with the coordinate system on the target substrate, thus, a certain position on the transfer substrate
  • the position coordinate of a device on the transfer substrate is the same as the position coordinate of the device to be transferred on the target substrate.
  • the coordinate position of the device in FIG. 5A is represented by a shaded square, and the coordinate position of the missing device (for example, the position represented by the coordinates (2, B) in FIG. 5A) is represented by a blank area.
  • the present embodiment is not limited to this. It is also possible that the coordinate position of a device is represented by the number "1", and the coordinate position of the missing device is represented by the number "0".
  • the distance between two devices arranged in the direction of the X axis is the distance between the two devices arranged in the direction of the X axis shown in FIG. 5B
  • the first distance between two adjacent devices arranged in the direction of the coordinate axis and the partial area on the target substrate that are arranged in the direction of the coordinate axis is an integer multiple. That is, the first distance may be an integer multiple of the second distance, or the second distance may be an integer multiple of the first distance.
  • comparing the first position information 201 with the second position information 301 of the device to be transferred on the target substrate to obtain the first target position information 302 includes: if the first position information 201 includes For all locations recorded in the second location information 301, the first target location information 302 is the second location information 301. That is, the first location information 201 and the second location information 301 are compared to generate the first target location information 302. If the location coordinates of the device to be transferred in the second location information 301 are included in the device location information in the first location information 201 Within the position coordinates, the device is transferred according to the position coordinates recorded in the second position information 301.
  • the first target position information at this time is information such as the design layout position on the target substrate, and the first position information and the second position information meet the position matching requirements, so that the next step of alignment matching can be performed.
  • FIG. 6A is a schematic diagram of the fixed-point transfer process provided in this embodiment.
  • the transfer substrate 210 is aligned and matched with the target substrate 300, and the device 101 is transferred to the target substrate 300 by the laser printer 400.
  • the transfer substrate 210 can be aligned with the target substrate 300 through the alignment mark 214 shown in FIG. 4C.
  • the laser printer 400 performs fixed-point laser irradiation on the device 101 on the transfer substrate 210 to transfer the device 101 to the target substrate 300.
  • the fixed-point laser irradiation includes: the data processor inputs the first target position information 302 into the spatial light modulation component In the laser printer 400 of 410, the on-off state of the spatial light modulation component 410 is controlled to realize that the laser printer 400 irradiates at least part of the devices 101 on the transfer substrate 210 corresponding to the first transfer position with laser.
  • the transfer adhesive layer 210 is the substrate 212 in low degree of crosslinking have a larger adhesion (> 0.1N / cm 2), highly cross-linked adhesive force is weakened ( ⁇ 0.05N / cm 2), the cross The degree of connection is adjusted by heating or ultraviolet light.
  • the degree of cross-linking of the adhesive layer 212 after being irradiated with ultraviolet light is higher than that of not being irradiated with ultraviolet light. Therefore, the adhesive force of the adhesive layer 212 after being irradiated with ultraviolet light is weakened, and the device 101 can be released to the target On the substrate 300.
  • the laser printer 400 includes a laser transmitter and a beam expander (not shown in the figure).
  • the laser light emitted by the laser transmitter is beam-expanded and then irradiated on the spatial light modulation component 410.
  • the spatial light modulation component 410 modulates The position and range of the light emitted by the laser printer.
  • the laser light emitted by the laser transmitter is ultraviolet pulsed light with a wavelength of 365-435 nm.
  • the spatial light modulation component 410 includes a digital micromirror device (DMD).
  • FIG. 6B is a schematic diagram of a partial structure of the digital micromirror array. As shown in FIG. 6B, the digital micro-mirror array includes a plurality of micro-mirrors 411, and the size of each micro-mirror 411 in a direction parallel to the transfer substrate 210 is 5.6*5.6 ⁇ m-12*12 ⁇ m.
  • the digital micromirror array may include 2560*1600 micromirrors 411, and the shape of the micromirrors 411 may be square with a size of 7.6*7.6 ⁇ m.
  • a digital micromirror array can be a combination of thousands of tilted microscopic, aluminum alloy lenses, these lenses are fixed on a hidden yoke, the torsion hinge structure connects the yoke and the pillar, and the torsion hinge structure allows the lens to rotate ⁇ 12 degrees.
  • Each micromirror 411 can be opened or closed to modulate the laser emission position and range.
  • the hinge structure allows the lens to tilt between the two states, +12 degrees is "on”, -12 degrees is "off", when the lens is not When working, they are in a 0 degree "parked" state.
  • FIG. 6C is a schematic cross-sectional view of the digital micromirror array shown in FIG. 6B taken along line II.
  • the angle between the mirror surface of the micromirror 411 in the light exit area 4100 and its substrate is +12 degrees. Therefore, the micromirror 411 in the light exit area 4100 is configured to transmit laser light (laser can
  • the laser printer 400 is reflected along the direction perpendicular to the substrate of the micromirror, and the angle between the mirror surface of the micromirror 411 and the substrate outside the light exit area 4100 is -12 degrees. 411 cannot reflect the laser light (the laser light is reflected in other directions) out of the laser printer 400. Therefore, by adjusting the angle of the micromirror to adjust the direction of the laser light emission, a fixed-point irradiation is realized.
  • FIG. 6D is a timing diagram of the laser pulse and the digital micromirror array.
  • the laser pulse on time of the laser printer 400 is within the on time of the digital micromirror array 410.
  • the ultraviolet pulsed laser is turned on and emits laser light, and the laser light is reflected by the micro-mirror in the turned-on state to the first transfer position of the transfer substrate to achieve fixed-point irradiation.
  • Turning on the corresponding micro-mirror before the laser pulse is turned on can prevent the laser from irradiating the position other than the first transfer position of the transfer substrate.
  • the turn-on time of the digital micromirror array can be 80-100us, and the turn-on time of the laser pulse can be 8-50us.
  • the digital signal controls the micromirror to turn off, and the closing time of the micromirror is within the closing time of the laser pulse.
  • the transfer of the device 101 can be achieved by controlling the movement of the transfer substrate 210 and the target substrate 300 relative to the laser printer 400 (the laser printer 400 does not move).
  • This embodiment is not limited to this, and the laser printer 400 can also be controlled to move relative to the transfer substrate 210.
  • the number of laser printers 400 may be one or more.
  • the light reflected by the digital micromirror array can irradiate the first transfer position on the transfer substrate 210 multiple times, and the light spot under the cumulative irradiation should be larger than the size of the device 101.
  • the maximum spot size of the laser printer 400 irradiated on the transfer substrate 210 may be 2*3 mm, and the minimum spot size may be 1.26*1.26um.
  • the scanning speed of the laser printer 400 relative to the target substrate 300 can reach 150 mm/s. In spot size of 3mm, scan speed to 150mm / s and the size of the device 101 is 10 * 10um, for example, in the process of the transfer device 101, 4.5 * 10 7 per second transfer device 101 may be implemented, thereby enabling Large and fast transfers.
  • FIG. 7 is a schematic diagram of the transfer process of the device provided in this embodiment.
  • a buffer layer 3001 is provided on the side of the target substrate 300 where the device 101 is placed, and the orthographic projection of the buffer layer 3001 on the target substrate 300 and the orthographic projection of the device 101 on the target substrate 300 do not overlap.
  • the transfer substrate 210 is located above the target substrate 300, and a buffer layer 3001 is provided on the area of the target substrate 300 not used for placing the device 101, thereby reducing the target substrate 300 and the transfer Adhesion of the substrate 210 during the transfer process.
  • FIGS. 8A to 8C are schematic diagrams of the first location information, the second location information, and the first target location information provided by another example of this embodiment.
  • the first position information 201 includes a plurality of sub-position information (FIG. 8A schematically shows the first sub-position information), that is, the first position information 201 is located on the transfer substrate.
  • the first sub-position information is the position information corresponding to the device that is used to transfer to the target substrate. Therefore, the transfer substrate can be used to transfer the same device multiple times. But not limited to this, it is also possible to grow the same or different kinds of devices on different substrates, and then transfer the same or different kinds of devices to the target substrate through multiple transfers.
  • comparing the first location information 201 with the second location information 301 to obtain the first target location information 302 may also include: if the first sub-location information 2018 only includes the second location For the part of the position recorded in the information 301, the first target position information 302 is at least part of the information where the first sub-position information 2018 and the second position information 301 overlap. At this time, the first sub-position information and the second position information do not completely meet the position matching requirements.
  • the next step of alignment matching can be performed, but for the transfer substrate that does not meet the position matching requirements
  • the device cannot be transferred through the transfer substrate, and the sub-location information (for example, the second sub-location information mentioned later) at other locations on the transfer substrate needs to be compared with the second location information.
  • the first sub-location information 2018 includes other location information in the second location information 301 except the missing location information 3010, and the location information 3010 in the second location information 301 that is missed by the first sub-location information 2018 is the first location information.
  • the defect location information 2010 is the coordinate of the defect location of the device 101 on the transfer substrate 210.
  • the second location information 301 is divided into the first information area 3011 and the first information area covered by the first sub-location information 2018.
  • the second information area 3012 including the location information 3010 missed by the first sub-location information 2018, the first target location information 302 is the location information of the first information area 3011.
  • the coordinate position information of the device to be transferred on the transfer substrate corresponding to the first information area 3011 is located in the third information area 2011 of the first sub-position information 2018, and the coordinate position information of the device to be transferred on the transfer substrate corresponding to the second information area 3012 Located in the fourth information area 2012 of the first sub-location information 2018.
  • the first target position information 302 shown in FIG. 8C is input to the spatial light modulation component 410 shown in FIG. 6A, and the spatial light modulation component 410 modulates the laser light emitted by the laser printer 400 to only irradiate the first target position on the transfer substrate 210 at a fixed point.
  • the spatial light modulation component 410 modulates the laser light emitted by the laser printer 400 to only irradiate the first target position on the transfer substrate 210 at a fixed point.
  • after the laser printer is turned on it will simultaneously irradiate at least part of the devices at the transfer position on the transfer substrate.
  • the laser pulse of the laser printer can be turned on once. The transfer of all devices can achieve precise irradiation and save process time.
  • the first information area 3011 when used as the first target location information, only part of the device transfer is completed.
  • the actual coordinate position of the device to be transferred to the target substrate should be the same as the preset coordinate position of the device to be transferred recorded in the second position information, but the device on the target substrate transferred according to the first target position information is currently If the device requirements are not met, it is necessary to transfer the devices again to the position of the missing devices on the target substrate to ensure that the devices on the target substrate meet the device requirements.
  • FIG. 9A is a schematic diagram of another part of the transfer substrate provided by an example of this embodiment
  • FIG. 9B is a schematic diagram of the second sub-position information of the device on the transfer substrate shown in FIG. 9A.
  • FIG. 9B shows a schematic diagram of other sub-location information included in the first location information 201, for example, the second sub-location information 2019.
  • FIG. 9A shows another area on the transfer substrate 210 for transferring the device 101 to the target substrate.
  • the second sub-position information 2019 and the information in the second position information 301 are compared to obtain the second target position information 3002 that records the second transfer position. If the second sub-location information 2019 includes all the locations recorded in the second information area 3012, the location information in the second information area 3012 is the second target location information 3002. That is, compare the second sub-location information 2019 with the missing location information 3010 recorded in the second information area 3012, if the second sub-location information 2019 includes the location information 3010 (corresponding to the The compensation position information 2020 in the second sub-position information 2019) is to align the device position corresponding to the second sub-position information 2019 of the transfer substrate 210 with the target substrate.
  • the second sub-location information 2019 may also be divided into the third information area 2011 and the fourth information area 2012, and the transfer substrate 210
  • the device 101 on the position coordinate recorded in the fourth information area 2012 is transferred.
  • the second sub-location information 2019 is also the coordinate location information of the device, and the coordinate system of the second sub-location information is the same as the coordinate system of the first sub-location information.
  • the coordinates of the sub-location information are The origin of the system is aligned with the origin of the coordinate system of the second information area.
  • the orthographic projection of the coordinate system on the transfer substrate on the target substrate coincides with the coordinate system on the target substrate; when the transfer substrate is aligned with the target substrate, the coordinate system on the transfer substrate is in the target The orthographic projection on the substrate also coincides with the coordinate system on the target substrate.
  • the devices in other areas of the transfer substrate can be used to transfer the remaining devices to realize that the location information of the device on the final target substrate meets the second location information, thereby satisfying Device requirements.
  • the device before transferring the device from the original substrate to the target substrate, it is also possible to prepare multiple identical original substrates with the devices formed thereon, and transfer the devices on the multiple original substrates to multiple transfer substrates.
  • the other transfer substrates are used as standby transfer substrates.
  • the spare transfer substrate can be used to complete the transfer of the devices in the remaining missing positions.
  • a spare transfer substrate can also be used to realize that the final location information of the device on the target substrate meets the second location information, so the missing locations on the target substrate can be compensated for transfer through the same transfer process.
  • FIGS. 10A-10C are schematic diagrams of the first location information and two second location information provided by another example of this embodiment, respectively.
  • the first position information 201 includes all the positions described in the plurality of second position information 301, for example, the first position information 201 includes all the positions described in the two second position information 3011 and 3012, and The respective second location information 3011 and 3012 are first target location information, respectively.
  • the same transfer substrate can be used to transfer devices to multiple target substrates.
  • the transfer substrate may be aligned with a plurality of target substrates, and then the device may be transferred to the plurality of target substrates according to the first target position information.
  • FIG. 11 is a schematic diagram of second location information provided by another example of this embodiment.
  • the second position information 301 includes a plurality of first position information 201
  • the second position information 301 includes all the position information of the two first position information 201
  • two The transfer substrate transfers the device on the same target substrate, and the two transfer substrates at this time are aligned with different positions of the same target substrate.
  • the density of the devices on the transfer substrate is not required to be the same as that of the devices on the target substrate.
  • the number of transfer substrates can be adjusted or the devices on the transfer substrate can be selectively transferred. , In order to achieve the different density requirements of the devices to be transferred on the target substrate and save costs.
  • FIG. 12 is a schematic diagram of the transfer device provided in this embodiment.
  • the transfer device in this embodiment includes: a transfer substrate 210 configured to transfer a plurality of devices 101 formed on an original substrate to a target substrate; a laser printer 400 includes a spatial light modulation component 410.
  • the laser printer 400 is configured to modulate the laser printer 400 according to the comparison result of the first position information of the plurality of devices 101 on the transfer substrate 210 and the second position information of the device 101 to be transferred on the target substrate.
  • the device 400 simultaneously irradiates at least part of the devices 101 on the transfer substrate 210 with a fixed-point laser.
  • the process of using the transfer device provided in this embodiment to transfer the device is shown in FIG. 6A, and will not be repeated here.
  • a laser printer may be used to simultaneously perform fixed-point laser irradiation on all devices on the transfer substrate, so that all devices can be transferred after one pulse is turned on.
  • the transfer device provided in this embodiment further includes a data processor 500 electrically connected to the spatial light modulation component 410, and is configured to compare the first position information with the second position information to obtain transmission
  • the spatial light modulation component 410 modulates the laser printer 400 to perform fixed-point laser irradiation on the transfer position of the transfer substrate 210 according to the target position information.
  • the acquisition of the first location information, the second location information, and the target location information in this embodiment is the same as the first location information, the second location information, and the first target location shown in FIGS. 5A-5C and 8A-11.
  • the information acquisition process is the same, so I won’t repeat it here.
  • the spatial light modulation component 410 in this embodiment is a digital micro-mirror array.
  • the digital micro-mirror array includes a plurality of micro-mirrors 411 shown in FIG. 6B.
  • the size of each micro-mirror 411 in a direction parallel to the transfer substrate 210 is It is 5.6*5.6 ⁇ m-12*12 ⁇ m.
  • the digital micromirror array may include 2560*1600 micromirrors 411, and the shape of the micromirrors 411 may be square with a size of 7.6*7.6 ⁇ m.
  • a digital micromirror array can be a combination of thousands of tilted microscopic, aluminum alloy lenses, these lenses are fixed on a hidden yoke, the torsion hinge structure connects the yoke and the pillar, and the torsion hinge structure allows the lens to rotate ⁇ 12 degrees.
  • Each micromirror 411 can be opened or closed to modulate the laser emission position and range.
  • the hinge structure allows the lens to tilt between the two states, +12 degrees is "on”, -12 degrees is "off", when the lens is not When working, they are in a 0 degree "parked" state.
  • the angle of the micro mirror 411 in the light exit area 4100 is +12 degrees. Therefore, the micro mirror 411 in the light exit area 4100 is configured to reflect the laser light out of the laser printer 400, and the light exit area 4100 is outside
  • the angle of the micromirror 411 in the area is -12 degrees, and the micromirror 411 in this area cannot reflect the laser light out of the laser printer 400. Therefore, by adjusting the angle of the micromirror to adjust the direction of laser emission, fixed-point irradiation is realized.
  • the laser pulse on time of the laser printer 400 is within the on time of the digital micromirror array 410.
  • the ultraviolet pulsed laser is turned on and emits laser light, and the laser light is reflected by the micro-mirror in the turned-on state to the transfer position of the transfer substrate to achieve fixed-point irradiation.
  • Turning on the corresponding micro-mirror before the laser pulse is turned on can prevent the laser from being irradiated to a position other than the transfer position of the transfer substrate.
  • the turn-on time of the digital micromirror array can be 80-100us, and the turn-on time of the laser pulse can be 8-50us.
  • the digital signal controls the micromirror to turn off, and the closing time of the micromirror is within the closing time of the laser pulse.
  • the number of laser printers 400 may be one or more.
  • the light reflected by the digital micromirror array can irradiate the first transfer position on the transfer substrate 210 multiple times, and the light spot under the cumulative irradiation should be larger than the size of the device 101.
  • the maximum spot size of the laser printer 400 irradiated on the transfer substrate 210 may be 2*3 mm, and the minimum spot size may be 1.26*1.26um.
  • the scanning speed of the laser printer 400 relative to the target substrate 300 can reach 150 mm/s. In spot size of 3mm, scan speed to 150mm / s and the size of the device 101 is 10 * 10um, for example, in the process of the transfer device 101, 4.5 * 10 7 per second transfer device 101 may be implemented, thereby enabling Large and fast transfers.
  • the transfer device provided in this embodiment further includes: a zoom lens 600, located on the side of the spatial light modulation component 410 facing the transfer substrate 210, for adjusting the light spot emitted from the spatial light modulation component 410 Size to achieve fixed-point laser irradiation.
  • the zoom lens can adjust the size of the spot irradiated by the laser printer on the transfer substrate.
  • the size range of the spot on the transfer substrate irradiated by the laser printer can be 1.26*1.26um-2mm*3mm, which is not limited in this embodiment .
  • FIG. 12 schematically shows that the zoom lens is located on the side of the laser printer facing the transfer substrate, but it is not limited to this, and it can also be located in the laser printer and located on the light exit side of the spatial light modulation component.
  • the device transferred in this embodiment may be a micro light emitting diode, and the maximum dimension of the micro light emitting diode in a direction parallel to the transfer substrate is 5-20 ⁇ m.
  • the transfer device provided by this embodiment can realize large-area rapid transfer of devices, and can also adjust the density of devices to be transferred on the target substrate as required, for example, realize high-density positioning and transfer, and save process costs.

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Abstract

一种转印方法以及转印装置。转印方法包括：将原始衬底(110)上形成的多个器件(101)转移至转移基板(210)(S101)；获取转移基板(210)上的多个器件(101)所在位置的第一位置信息(201)(S102)；获取目标基板(300)上待转移器件(101)对应位置的第二位置信息(301)(S103)；比较第一位置信息(201)与第二位置信息(301)以得到记载第一转印位置的第一目标位置信息(S104)；以及将转移基板(210)与目标基板(300)对位，并根据第一目标位置信息(302)对转移基板(210)上的与第一转印位置对应的至少部分器件(101)同时进行定点激光照射以将至少部分器件(101)从转移基板(210)转移到目标基板(300)(S105)。该转印方法可以将微纳器件(101)大量快速的转移到目标基板(300)上，不仅可以降低制作成本，还可以根据需求准确的放置微纳器件(101)在目标基板(300)上的指定位置，从而加快显示面板的产业化进程。

Description

转印方法和转印装置 技术领域
本公开至少一个实施例涉及一种转印方法和转印装置。
背景技术
随着物联网技术的发展，显示器件与微纳器件的集成是未来的发展趋势。在小尺寸的微纳器件与显示器件的集成过程中，需要将大量的微纳器件精确的转移到显示器件的指定位置。
发明内容
本公开的至少一实施例提供一种转印方法和转印装置。
本公开的至少一实施例提供一种转印方法，包括：将原始衬底上形成的多个器件转移至转移基板；获取所述转移基板上的所述多个器件所在位置的第一位置信息；获取目标基板上待转移器件对应位置的第二位置信息；比较所述第一位置信息与所述第二位置信息以得到记载第一转印位置的第一目标位置信息；以及将所述转移基板与所述目标基板对位，并根据所述第一目标位置信息对所述转移基板上的与所述第一转印位置对应的至少部分器件同时进行定点激光照射以将所述至少部分器件从所述转移基板转移到所述目标基板上。
例如，进行定点激光照射包括：将所述第一目标位置信息输入具有空间光调制部件的激光印刷器中，以使所述空间光调制部件调制所述激光印刷器对所述转移基板上的与所述第一转印位置对应的至少部分器件同时进行激光照射。
例如，比较所述第一位置信息与所述第二位置信息以得到所述第一目标位置信息包括：如果所述第一位置信息包括所述第二位置信息中记载的全部位置，则所述第一目标位置信息为所述第二位置信息。
例如，所述第一位置信息包括多个所述第二位置信息记载的全部位置，多个所述第一目标位置信息为多个所述第二位置信息，所述转移基板被配置为与多个所述目标基板分别进行对位，然后根据多个所述第一目标位置信息将所述转移基板上的器件分别向多个所述目标基板转移。
例如，所述第一位置信息包括多个子位置信息，比较所述第一位置信息与所述第二位置信息以得到所述第一目标位置信息还包括：如果所述多个子位置 信息中的第一子位置信息仅包括所述第二位置信息中记载的部分位置，将所述第二位置信息划分为第一子位置信息涵盖的第一信息区和包括被第一子位置信息遗漏的位置信息的第二信息区，所述第一目标位置信息为所述第一信息区的位置信息。
例如，转印方法还包括：比较所述多个子位置信息中的第二子位置信息与所述第二信息区中的位置信息以得到记载第二转印位置的第二目标位置信息，其中，如果所述第二子位置信息包括所述第二信息区中记载的全部位置，则所述第二信息区中的位置信息为所述第二目标位置信息；根据所述第二目标位置信息，对所述转移基板上的与所述第二转印位置对应的至少部分器件同时进行定点激光照射。
例如，获取所述第一位置信息包括：对所述转移基板进行光学扫描以获得所述多个器件在所述转移基板上的位置信息。
例如，所述激光印刷器的激光脉冲开启时间处于所述空间光调制部件的开启时间内。
例如，所述转移基板包括层叠设置的透明材料层以及粘附层，所述器件位于所述粘附层远离所述透明材料层的一侧。
例如，所述目标基板用于放置所述器件的一侧设置有缓冲层，所述缓冲层在所述目标基板上的正投影与所述器件在所述目标基板上的正投影没有交叠。
例如，形成所述器件之前包括：在所述原始衬底上形成牺牲层，且对所述牺牲层图案化以形成多个彼此分隔的牺牲层块；形成所述器件包括：在所述牺牲层块远离所述原始衬底的一侧形成用于形成所述器件的材料层，所述材料层包括位于所述牺牲层块上的部分以及相邻所述牺牲层块之间的间隔的部分；对所述材料层图案化以形成位于所述牺牲层块上的所述器件以及连接相邻的两个器件的连接部，所述连接部包括位于所述牺牲层块上的部分以及相邻所述牺牲层块之间的间隔的部分；去除所述牺牲层。
例如，形成所述器件包括：在所述原始衬底上形成牺牲层；在所述牺牲层远离所述原始衬底的一侧形成所述器件，形成所述器件以后包括：图案化所述牺牲层以使所述牺牲层在所述原始衬底上的正投影完全位于所述器件在所述原始衬底上的正投影内。
例如，所述器件为微发光二极管，所述微发光二极管在平行于所述原始衬底的方向的最大尺寸为5-20μm。
本公开至少一实施例提供一种转印装置，包括：转移基板，被配置为将在原始衬底上形成的多个器件转移至目标基板；激光印刷器，包括空间光调制部件，被配置为根据所述转移基板上的所述多个器件的第一位置信息与所述目标基板上接受待转移器件的第二位置信息的比对结果，对所述激光印刷器进行调制以使所述激光印刷器对所述转移基板上的至少部分器件同时进行定点激光照射。
例如，转印装置还包括：数据处理器，与所述空间光调制部件电连接，被配置为将所述第一位置信息与所述第二位置信息进行对比以得到传输至所述空间光调制部件的目标位置信息，所述空间光调制部件根据所述目标位置信息调制所述激光印刷器对所述转移基板上位于转印位置的所述至少部分器件同时进行定点激光照射。
例如，所述空间光调制部件为数字微镜阵列。
例如，所述数字微镜阵列包括多个微镜，每个所述微镜在平行于所述转移基板的平面的形状为正方形，且尺寸为5.6*5.6μm-12*12μm。
例如，转印装置还包括：缩放镜头，位于所述空间光调制部件面向所述转移基板的一侧。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1A为本公开一实施例提供的转印方法的示意性流程图；
图1B为根据图1A所示的转印方法的转印流程示意图；
图2A和图2B为本公开一实施例的一示例提供的在原始衬底上形成的器件的结构示意图；
图3A-图3C为本公开一实施例的另一示例提供的在原始衬底上形成的器件的结构示意图；
图4A为本公开一实施例中将器件从原始衬底转移至转移基板的示意图；
图4B和图4C为本公开一实施例提供的转移基板的示意图；
图5A-图5C分别为本公开一实施例的一示例提供的第一位置信息、第二位置信息以及第一目标位置信息的示意图；
图6A为本公开一实施例提供的定点转移过程示意图；
图6B为图6A所示的数字微镜阵列的局部结构示意图；
图6C为图6B所示的数字微镜阵列沿II线所截的截面示意图；
图6D为本公开一实施例提供的激光脉冲与数字微镜阵列的时序关系图；
图7为本公开一实施例提供的器件的转移过程示意图；
图8A-图8C分别为本公开一实施例的另一示例提供的第一位置信息、第二位置信息以及第一目标位置信息的示意图；
图9A为本公开一实施例的一示例提供的转移基板上的另一部分的示意图；
图9B为图9A所示的转移基板上的器件的第二子位置信息示意图；
图10A-图10C分别为本公开一实施例的另一示例提供的第一位置信息和两个第二位置信息的示意图；
图11为本公开一实施例的另一示例提供的第二位置信息示意图；以及
图12为本公开另一实施例提供的转印装置的示意图。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其它实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。
在研究中，本申请的发明人发现：巨量转移(mass transfer printing,MTP)是微发光二极管(micro LED)生产过程中的关键步骤之一，相关技术受到显示面板行业的广泛关注。目前的巨量转移技术包括X-Celeprint Ltd.发明的微转印(Micro-Transfer-Printing)技术、制作图案化的转移基板实现转印的技术以 及激光扫描技术等。
微转印技术通过动力学控制弹性印模(stamp)的粘附性来实现微纳器件的拾取与放置。也就是，使用弹性印模结合高精度运动控制打印头，有选择地拾取(pick-up)微型器件的大阵列，并将其打印到目标基板上，通过改变打印头的速度，可以选择性地调整弹性印模和被打印器件之间的黏附力，最终控制装配工艺。较快的转印速度可以实现微纳器件的拾取，较慢的转印速度可以实现微纳器件的放置。也就是，当印模移动较快时，黏附力变得很大，可以拾取微纳器件；当印模远离键合界面且移动较慢时，黏附力变得很小，可以将微纳器件释放到目标基板上。然而这种技术并不能改变微纳器件的密度，不能实现按需的放置微纳器件。
制作图案化的转移基板实现转印的技术通过静电作用、磁性吸引等方式实现微纳器件的转移和放置，然而在这种方式中，图案化转移基板的成本高且极易引起缺陷。此外，激光扫描的方式虽然可以实现微纳器件的精确转移，但是工作效率低，不适用工业化生产。
本公开的实施例提供一种转印方法和转印装置。该转印方法包括：将原始衬底上形成的多个器件转移至转移基板；获取转移基板上的多个器件所在位置的第一位置信息；获取目标基板上待转移器件对应位置的第二位置信息；比较第一位置信息与第二位置信息以得到记载第一转印位置的第一目标位置信息；以及将转移基板与目标基板对位，并根据第一目标位置信息对转移基板上的与第一转印位置对应的至少部分器件同时进行定点激光照射以将至少部分器件从转移基板转移到目标基板上。通过本公开实施例提供的转印方法可以将微纳器件大量快速的转移到目标基板上，不仅可以降低制作成本，还可以根据需求准确的放置微纳器件在目标基板上的指定位置，从而加快MircoLED显示面板的产业化进程。
下面结合附图对本公开实施例提供的转印方法和转印装置进行描述。
本公开实施例提供一种转印方法，图1A为本实施例提供的转印方法的示意性流程图，图1B为根据图1A所示的转印方法的转移流程示意图。如图1A所示，转印方法包括如下具体步骤。
S101：将原始衬底上形成的多个器件转移至转移基板。
S102：获取转移基板上的多个器件所在位置的第一位置信息。
S103：获取目标基板上待转移器件对应位置的第二位置信息。
S104：比较第一位置信息与第二位置信息以得到记载第一转印位置的第一目标位置信息。
S105：将转移基板与目标基板对位，并根据第一目标位置信息对转移基板上的与第一转印位置对应的至少部分器件同时进行定点激光照射以将至少部分器件从转移基板转移到目标基板上。
图2A和图2B为本实施例的一示例提供的在原始衬底上形成的器件的结构示意图。图2B为沿图2A所示的AA线所截的截面示意图。
例如，如图1B和图2A所示，提供原始衬底110。原始衬底110的材料可以为硅、蓝宝石、碳化硅等。
例如，原始衬底110的形状可以为圆形，其直径可以为6寸、9寸或12寸等。图2A示意性的示出原始衬底的形状为圆形，但不限于此，还可以为矩形等其他形状。
例如，如图1B和图2A所示，在原始衬底110上形成多个器件101。例如，可以通过外延生长等方式在原始衬底110上形成用于形成器件101的材料，然后通过光刻工艺形成多个器件101。
例如，如图2A和图2B所示，在形成器件101之前，在原始衬底110上形成牺牲层102。在牺牲层102上形成了器件101之后，对牺牲层102图案化以使牺牲层102仅位于器件101与原始衬底110之间，即，牺牲层102在原始衬底110上的正投影位于器件101的中间部分在原始衬底110的正投影内，此时，被保留的部分牺牲层102用于使器件101与原始衬底110保持连接。而将牺牲层102刻蚀后仅保留位于器件101底部中央与原始衬底110之间的部分是为了使器件101容易从原始衬底110上剥离。
例如，图3A-图3C为本实施例的另一示例提供的在原始衬底上形成的器件的结构示意图。图3C为沿图3A所示的AA线所截的截面示意图。如图3B所示，形成器件101之前包括：在原始衬底110上形成牺牲层102，且对牺牲层102图案化以形成多个彼此分隔的牺牲层块1020。多个沿X方向和Y方向阵列排布的牺牲层块1020之间有间隔。
例如，如图3A-图3C所示，形成器件101包括：在牺牲层块1020远离原始衬底110的一侧形成用于形成器件101的材料层1010，材料层1010包括位于牺牲层块1020上的部分以及位于相邻牺牲层块1020之间的间隔的部分；对材料层1010图案化以形成位于牺牲层块1020上的器件101以及连接相邻的两 个器件101的连接部1011，连接部1011包括位于牺牲层块1020上的部分以及位于相邻牺牲层块1020之间的间隔的部分；刻蚀掉全部的牺牲层102，即，刻蚀掉全部的牺牲层块1020，从而，多个器件101通过连接部1011与原始衬底110连接。
例如，如果器件101的紫外耐受性较差，可在图案化形成器件101之前，在材料层1010的表面沉积紫外吸收层(氮化硅)或反射层(铝或钼等)。
例如，本实施例中的器件101可以为微发光二极管(micro LED)，例如，微发光二极管在平行于原始衬底的方向的最大尺寸为5-20μm。微发光二极管的紫外耐受性较好，可以不考虑形成上述紫外吸收层或反射层。在器件101为微发光二极管时，材料层1010可以包括阳极层、发光层以及阴极层等膜层，通过图案化材料层1010可以形成多个微发光二极管101，而相邻的微发光二极管101之间的连接部1011具有较小的宽度，以使器件101容易从原始衬底110上剥离。
例如，图4A为将器件从原始衬底转移至转移基板的示意图，图4B和图4C为本实施例提供的转移基板的示意图，图4C为图4B所示的转移基板的平面结构示意图。
例如，如图1B和图4A所示，将多个器件101转移到转移基板210上。由于器件101位于转移基板210面向原始衬底110的一侧，因此，图4A所示的转移基板210上的器件101以虚线框示出。
例如，如图4B所示，转移基板210包括透明材料层211以及粘附层212，器件101位于粘附层212上。
例如，透明材料层211的材料包括石英等紫外光高透过率材料。
例如，粘附层212的材料包括聚二甲基硅氧烷(PDMS)等。转移基板210与原始衬底110进行接触后，通过范德华力或静电吸附等方式将器件101转移到转移基板210上。
例如，如图4C所示，转移基板210上包括至少四个对位标记214，对位标记214以内的区域213为用于转移器件101的区域。转移基板210的尺寸可根据器件101的尺寸和转移效率进行调整。图4C示意性的示出对位标记位于用于转移器件101的区域的四个顶点，但不限于此，还可以位于区域的边上或者位于区域内的除转移器件的位置。
例如，图5A-图5C为本实施例的一示例提供的第一位置信息、第二位置 信息以及第一目标位置信息的示意图。
例如，如图1B和5A所示，获取多个器件101在转移基板210上的第一位置信息201。获取第一位置信息201包括：对转移基板210进行光学扫描以获得多个器件101在转移基板210上的位置信息。例如可以采用光学检测设备(如自动光学检测设备，AOI设备)对转移基板210设置有器件101的一侧进行扫描，确认器件101在转移基板210上的分布情况，并输出第一位置信息201。图5A可以示意为第一位置信息的全部，也可以示意为第一位置信息包括的多个子位置信息中的第一子位置信息。
例如，该第一位置信息201可以为数据文件，包括txt、csv、xls、doc等格式。
例如，第一位置信息201包括转移至转移基板210上的器件101的位置信息，或者，第一位置信息201至少包括未转移至转移基板210上的器件101的位置信息。
例如，如图5A所示，器件在转移基板上的所在位置可以转化为器件位于转移基板上的坐标系中的某个点的位置，由此，第一位置信息201为器件的坐标位置信息。如图5A所示，第一行第一个器件的坐标为(1，A)，第五行第二个器件的坐标为(5，B)等，每个器件对应一个坐标。
例如，如图5B所示，第二位置信息301可以为目标基板上的设计版图位置等的信息，即，第二位置信息301记载的位置为根据装置需求而已经设计好的位置。待转移器件对应于目标基板上的位置可转化为其位于目标基板上的坐标系中的某个点的位置，由此，第二位置信息301为待转移器件的坐标信息，且转移基板上的坐标系与目标基板上的坐标系为同一个坐标系。这里的“同一个坐标系”指，当转移基板与目标基板对位后，转移基板上的坐标系在目标基板上的正投影与目标基板上的坐标系重合，由此，转移基板上的某一个器件在转移基板上的位置坐标与该器件作为目标基板上的待转移器件在目标基板上的位置坐标相同。
图5A中的具有器件的坐标位置以具有阴影的方块表示，而缺失器件的坐标位置(例如图5A中的坐标(2，B)表示的位置)以空白区域表示，本实施例不限于此，还可以具有器件的坐标位置以数字“1”表示，而缺失器件的坐标位置以数字“0”表示。
例如，如图5A示出的均匀分布的器件位置中，沿X轴的方向排布的两个 器件之间的距离为图5B所示的沿X轴的方向排布的两个器件之间的距离的二分之一，而图5A所示的均匀分布的器件位置中，沿Y轴的方向排布的两个器件之间的距离等于图5B所示的沿Y轴的方向排布的两个器件之间的距离。
在本公开的实施中，转移基板上的部分区域中，沿坐标轴的方向排列的相邻的两个器件之间的第一距离与目标基板上的部分区域中，沿坐标轴的方向排列的相邻的两个器件之间的第二距离成整数倍关系。也就是，第一距离可以是第二距离的整数倍，也可以第二距离是第一距离的整数倍。
例如，如图1B以及图5A-图5C所示，比较第一位置信息201与目标基板上待转移器件的第二位置信息301以得到第一目标位置信息302包括：如果第一位置信息201包括第二位置信息301中记载的全部位置，则第一目标位置信息302为第二位置信息301。也就是，将第一位置信息201与第二位置信息301进行对比处理可生成第一目标位置信息302，如果第二位置信息301中待转移器件的位置坐标包含于第一位置信息201中器件的位置坐标内，则根据第二位置信息301记载的位置坐标进行器件的转移。此时的第一目标位置信息即为目标基板上的设计版图位置等的信息，第一位置信息与第二位置信息满足位置匹配要求，从而，可以进行下一步对位匹配的步骤。
例如，图6A为本实施例提供的定点转移过程示意图。如图1B和图6A所示，将转移基板210与目标基板300进行对位匹配，并通过激光印刷器400将器件101转移到目标基板300上。
例如，转移基板210可以通过图4C所示的对位标记214实现与目标基板300的对位。
例如，激光印刷器400对转移基板210上的器件101进行定点激光照射以将器件101转移到目标基板300上，定点激光照射包括：数据处理器将第一目标位置信息302输入具有空间光调制部件410的激光印刷器400中，以控制空间光调制部件410的开关状态以实现激光印刷器400对转移基板210上的对应与第一转印位置的至少部分器件101进行激光照射。
例如，转移基板210的粘附层212在低交联度有较大的粘附力(>0.1N/cm 2)，高交联度粘附力减弱(<0.05N/cm 2)，而交联度通过加热或紫外光照来调整。粘附层212被紫外光照射后的交联度高于没有被紫外光照射时的交联度，因此，粘附层212被紫外光照射后的粘附力减弱，可以将器件101释放到目标基板300上。
例如，激光印刷器400中包括激光发射器和扩束镜(图中未示出)，激光发射器发射的激光经过扩束后照射到空间光调制部件410上，通过空间光调制部件410调制从激光印刷器出射的光的位置和范围。
例如，激光发射器发射的激光为紫外脉冲光，波长为365～435nm。
例如，空间光调制部件410包括数字微镜阵列(digital micromirror device，DMD)。图6B为数字微镜阵列的局部结构示意图。如图6B所示，数字微镜阵列包括多个微镜411，每个微镜411在平行于转移基板210的方向的尺寸为5.6*5.6μm-12*12μm。
例如，数字微镜阵列可以包括2560*1600个微镜411，微镜411的形状可以为正方形，其尺寸为7.6*7.6μm。
例如，数字微镜阵列可以是成千上万个倾斜的显微的、铝合金镜片的组合，这些镜片被固定在隐藏的轭上，扭转铰链结构连接轭和支柱，扭力铰链结构允许镜片旋转±12度。每个微镜411可以通过开或关来调制激光的出射位置和范围，铰链结构允许镜片在两个状态之间倾斜，+12度为“开”，-12度为“关”，当镜片不工作时，它们处于0度的“停泊”状态。
例如，图6C为图6B所示的数字微镜阵列沿II线所截的截面示意图。如图6B和图6C所示，位于出光区4100的微镜411的镜面与其衬底之间的夹角为+12度，因此，该出光区4100的微镜411被配置为将激光(激光可以沿垂直于微镜的衬底的方向出射)反射出激光印刷器400，而出光区4100以外的区域的微镜411的镜面与其衬底之间的夹角为-12度，该区域的微镜411不能将激光(激光被反射到其他方向)反射出激光印刷器400，从而，通过调节微镜的角度以调节激光出射的方向，进而实现定点照射。
例如，图6D为激光脉冲与数字微镜阵列的时序关系图。如图6D所示，激光印刷器400的激光脉冲开启时间处于数字微镜阵列410的开启时间内。例如，通过数字信号控制微镜开启后，紫外脉冲激光器处于开启状态并发射激光，激光经过处于开启状态的微镜反射到转移基板的第一转印位置从而实现定点照射。在激光脉冲开启前先开启相应的微镜可以防止激光照射到转移基板的第一转印位置以外的位置上。
例如，数字微镜阵列开启时间可以为80-100us，激光脉冲开启的时间可以是8-50us。在激光脉冲关闭后，数字信号控制微镜关闭，且微镜的关闭时间处于激光脉冲的关闭时间内。
例如，可以通过控制转移基板210和目标基板300相对于激光印刷器400(激光印刷器400不动)运动而实现器件101的转印。本实施例不限于此，也可以控制激光印刷器400相对于转移基板210运动。
例如，激光印刷器400的数量可以是一个或多个。
例如，经数字微镜阵列反射的光可对转移基板210上的第一转印位置进行多次照射，累计照射下的光斑应大于器件101的尺寸。
例如，激光印刷器400照射到转移基板210上的最大光斑尺寸可以是2*3mm，最小光斑尺寸可以是1.26*1.26um。激光印刷器400相对目标基板300的扫描速度可达150mm/s。以光斑尺寸为3mm、扫描速度为150mm/s以及器件101的尺寸为10*10um为例，在转移器件101的过程中，每秒钟可以实现4.5*10 7个器件101的转移，从而可以实现大量、快速的转移。
例如，图7为本实施例提供的器件的转移过程示意图。如图7所示，目标基板300用于放置器件101的一侧设置有缓冲层3001，缓冲层3001在目标基板300上的正投影与器件101在目标基板300上的正投影没有交叠。在转移基板210与目标基板300进行对位匹配后，转移基板210位于目标基板300的上方，在目标基板300的不用于放置器件101的区域设置有缓冲层3001，从而减小目标基板300与转移基板210在转移过程中的粘附性。
例如，图8A-图8C分别为本实施例的另一示例提供的第一位置信息、第二位置信息以及第一目标位置信息的示意图。
例如，如图1B以及图8A-图8C所示，第一位置信息201包括多个子位置信息(图8A示意性的示出第一子位置信息)，即，第一位置信息201为位于转移基板上的所有器件的位置信息，第一子位置信息是用于转移至目标基板上的器件对应的位置信息，由此，转移基板可以用于多次转移同种器件。但不限于此，还可以在不同衬底上生长相同或者不同种器件，然后经过多次转移将同种或不同种器件转移至目标基板上。
例如，如图1B以及图8A-图8C所示，比较第一位置信息201与第二位置信息301以得到第一目标位置信息302还可以包括：如果第一子位置信息2018仅包括第二位置信息301中记载的部分位置，则第一目标位置信息302为第一子位置信息2018与第二位置信息301重叠的至少部分信息。此时，第一子位置信息与第二位置信息不完全满足位置匹配要求，对于转移基板上满足位置匹配要求的部分可以进行下一步对位匹配的步骤，而对于转移基板上不满足位置 匹配要求的部分位置，就不能通过转移基板转移器件，需要将位于转移基板上的其他位置处的子位置信息(例如后续提到的第二子位置信息)与第二位置信息进行比较。
例如，第一子位置信息2018包括第二位置信息301中的除被遗漏的位置信息3010外的其他位置信息，则第二位置信息301中被第一子位置信息2018遗漏的位置信息3010为第一子位置信息2018中缺少的缺陷位置信息2010，该缺陷位置信息2010为转移基板210上的器件101的缺陷位置的坐标。
例如，在第一目标位置信息302为第一子位置信息2018与第二位置信息301重叠的至少部分信息时，第二位置信息301划分为第一子位置信息2018涵盖的第一信息区3011和包括被第一子位置信息2018遗漏的位置信息3010的第二信息区3012，第一目标位置信息302为第一信息区3011的位置信息。第一信息区3011对应的待转移器件在转移基板上的坐标位置信息位于第一子位置信息2018的第三信息区2011，第二信息区3012对应的待转移器件在转移基板上的坐标位置信息位于第一子位置信息2018的第四信息区2012。
例如，将图8C所示的第一目标位置信息302输入到图6A所示的空间光调制部件410中，空间光调制部件410调制激光印刷器400出射的激光仅定点照射转移基板210上的第三信息区2011记载的位置坐标上的例如全部器件，从而实现定点照射。本公开实施例中，激光印刷器开启后会同时照射至少部分位于转移基板上的转印位置处的器件，在目标基板上待转移器件数量较少时，激光印刷器的激光脉冲开启一次可以完成全部器件的转移，从而既能实现精确照射，又能节省工艺时间。
在图8A-图8C所示的示例中，将第一信息区3011作为第一目标位置信息时，只完成了部分器件的转移。实际上，应转移到目标基板上的器件的实际坐标位置应该与第二位置信息记载的待转移器件的预设坐标位置相同，但是目前根据第一目标位置信息转移后的目标基板上的器件是不满足装置要求的，因此还需要对目标基板上缺失的器件所在的位置再次转移器件以保证目标基板上的器件满足装置要求。
图9A为本实施例的一示例提供的转移基板上的另一部分的示意图，图9B为图9A所示的转移基板上的器件的第二子位置信息示意图。图9B示出了第一位置信息201包括的其他子位置信息，例如第二子位置信息2019的示意图。
例如，图9A示出了转移基板210上的另一部分用于向目标基板转移器件 101的区域。
例如，如图9B和图8B所示，比较第二子位置信息2019与第二位置信息301中的信息以得到记载第二转印位置的第二目标位置信息3002。如果第二子位置信息2019包括第二信息区3012中记载的全部位置，则第二信息区3012中的位置信息为第二目标位置信息3002。也就是，比较第二子位置信息2019与第二信息区3012中记载的被遗漏的位置信息3010，如果第二子位置信息2019包括被第一子位置信息2018遗漏的位置信息3010(对应于第二子位置信息2019中的补偿位置信息2020)，则将转移基板210的第二子位置信息2019对应的器件位置与目标基板对位。
例如，可以根据第一位置信息201的第三信息区2011和第四信息区2012，将第二子位置信息2019也划分为第三信息区2011和第四信息区2012，并对转移基板210的第四信息区2012记载的位置坐标上的器件101进行转移。第二子位置信息2019也为器件的坐标位置信息，且第二子位置信息的坐标系与第一子位置信息的坐标系相同，在这两次转移过程中，都是将子位置信息的坐标系原点与第二信息区的坐标系原点对齐。当转移基板与目标基板对位后，转移基板上的坐标系在目标基板上的正投影与目标基板上的坐标系重合；当转移基板与目标基板对位后，转移基板上的坐标系在目标基板上的正投影也与目标基板上的坐标系重合。
在转移基板不能实现器件的一次性全部转移的情况下，采用该转移基板的其他区域的器件可以进行剩余器件的转移以实现最终目标基板上的器件所在位置的信息满足第二位置信息，从而满足装置要求。
例如，实际工艺中，在将器件从原始衬底转移至目标基板之前也可以准备多个相同的形成有器件的原始衬底，并将多个原始衬底上的器件都转移至多个转移基板上，当一个转移基板用于将器件转移至目标基板上时，其他的转移基板作为备用转移基板。在那个转移基板不能完成全部器件的转移时，可以采用备用转移基板完成剩余遗漏位置的器件的转移。本实施例中也可以采用备用转移基板实现最终目标基板上的器件所在位置的信息满足第二位置信息，所以目标基板上的遗漏位置可以通过相同的转移过程进行弥补转移。
例如，图10A-图10C分别为本实施例的另一示例提供的第一位置信息和两个第二位置信息的示意图。如图10A-图10C所示，第一位置信息201包括多个第二位置信息301记载的全部位置，例如，第一位置信息201包括两个第 二位置信息3011和3012记载的全部位置，而各第二位置信息3011和3012分别为第一目标位置信息。由此，可以采用同一个转移基板对多个目标基板转移器件。例如，转移基板可以与多个目标基板进行对位，然后根据第一目标位置信息向多个目标基板转移器件。
例如，图11为本实施例的另一示例提供的第二位置信息示意图。如图10A和图11所示，在第二位置信息301包括多个第一位置信息201时，例如，第二位置信息301包括两个第一位置信息201的全部位置信息时，可以采用两个转移基板在同一个目标基板上转移器件，此时的两个转移基板与同一个目标基板的不同位置进行对位。
在图10A-图11所示的两个示例中，不要求转移基板上的器件的密度与目标基板上的器件的相同，可以通过调节转移基板的数量或者对转移基板上的器件选择性的转移，以实现目标基板上待转移器件的不同密度需求，节省成本。
本公开另一实施例提供一种转印装置，图12为本实施例提供的转印装置的示意图。如图12所示，本实施例中的转印装置包括：转移基板210，被配置为将在原始衬底上形成的多个器件101转移至目标基板；激光印刷器400，包括空间光调制部件410，被配置为根据转移基板210上的多个器件101的第一位置信息与目标基板上接受待转移器件101的第二位置信息的比对结果，对激光印刷器400进行调制以使激光印刷器400对转移基板210上的至少部分器件101同时进行定点激光照射。采用本实施例提供的转印装置转移器件的过程如图6A所示，在此不再赘述。
例如，本公开一实施例可以采用激光印刷器对转移基板上的全部器件同时进行定点激光照射，从而在一个脉冲开启后就可以实现器件的全部转移。
例如，如图12所示，本实施例提供的转印装置还包括与空间光调制部件410电连接的数据处理器500，被配置为将第一位置信息与第二位置信息进行对比以得到传输至空间光调制部件410的目标位置信息，空间光调制部件410根据目标位置信息调制激光印刷器400对转移基板210的转印位置进行定点激光照射。
本实施例中的第一位置信息和第二位置信息以及目标位置信息的获取以与图5A-图5C以及图8A-图11所示的第一位置信息、第二位置信息以及第一目标位置信息的获取过程相同，再此不再赘述。
例如，本实施例中的空间光调制部件410为数字微镜阵列，该数字微镜阵 列包括图6B所示的多个微镜411，每个微镜411在平行于转移基板210的方向的尺寸为5.6*5.6μm-12*12μm。例如，数字微镜阵列可以包括2560*1600个微镜411，微镜411的形状可以为正方形，其尺寸为7.6*7.6μm。
例如，数字微镜阵列可以是成千上万个倾斜的显微的、铝合金镜片的组合，这些镜片被固定在隐藏的轭上，扭转铰链结构连接轭和支柱，扭力铰链结构允许镜片旋转±12度。每个微镜411可以通过开或关来调制激光的出射位置和范围，铰链结构允许镜片在两个状态之间倾斜，+12度为“开”，-12度为“关”，当镜片不工作时，它们处于0度的“停泊”状态。
例如，如图6B所示，位于出光区4100的微镜411的角度为+12度，因此，该出光区4100的微镜411被配置为将激光反射出激光印刷器400，而出光区4100以外的区域的微镜411的角度为-12度，该区域的微镜411不能将激光反射出激光印刷器400，从而，通过调节微镜的角度以调节激光出射的方向，进而实现定点照射。
例如，激光印刷器400的激光脉冲开启时间处于数字微镜阵列410的开启时间内。例如，通过数字信号控制微镜开启后，紫外脉冲激光器处于开启状态并发射激光，激光经过处于开启状态的微镜反射到转移基板的转印位置从而实现定点照射。在激光脉冲开启前先开启相应的微镜可以防止激光照射到转移基板的转印位置以外的位置上。
例如，数字微镜阵列开启时间可以为80-100us，激光脉冲开启的时间可以是8-50us。在激光脉冲关闭后，数字信号控制微镜关闭，且微镜的关闭时间处于激光脉冲的关闭时间内。
例如，激光印刷器400的数量可以是一个或多个。
例如，经数字微镜阵列反射的光可对转移基板210上的第一转印位置进行多次照射，累计照射下的光斑应大于器件101的尺寸。
例如，激光印刷器400照射到转移基板210上的最大光斑尺寸可以是2*3mm，最小光斑尺寸可以是1.26*1.26um。激光印刷器400相对目标基板300的扫描速度可达150mm/s。以光斑尺寸为3mm、扫描速度为150mm/s以及器件101的尺寸为10*10um为例，在转移器件101的过程中，每秒钟可以实现4.5*10 7个器件101的转移，从而可以实现大量、快速的转移。
例如，如图12所示，本实施例提供的转印装置还包括：缩放镜头600，位于空间光调制部件410面向转移基板210的一侧，用于调整从空间光调制部件 410出射的光斑的尺寸以实现定点激光照射。缩放镜头可以调整激光印刷器照射到转移基板上的光斑的尺寸，例如，激光印刷器照射到转移基板上的光斑的尺寸范围可以为1.26*1.26um-2mm*3mm，本实施例对此不作限制。
图12示意性的示出缩放镜头位于激光印刷器面向转移基板的一侧，但不限于此，还可以位于激光印刷器内，且位于空间光调制部件的出光侧。
例如，本实施例中转移的器件可以为微发光二极管，微发光二极管在平行于转移基板的方向的最大尺寸为5-20μm。
采用本实施例提供的转印装置可以实现器件的大面积快速转移，并且还可以根据需要调整目标基板上的待转移器件的密度，例如实现高密度定位转移，节省工艺成本。
有以下几点需要说明：
(1)本公开的实施例附图中，只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(2)在不冲突的情况下，本公开的同一实施例及不同实施例中的特征可以相互组合。
以上所述仅是本公开的示范性实施方式，而非用于限制本公开的保护范围，本公开的保护范围由所附的权利要求确定。

Claims (18)

  1. 一种转印方法，包括：
    将原始衬底上形成的多个器件转移至转移基板；
    获取所述转移基板上的所述多个器件所在位置的第一位置信息；
    获取目标基板上待转移器件对应位置的第二位置信息；
    比较所述第一位置信息与所述第二位置信息以得到记载第一转印位置的第一目标位置信息；以及
    将所述转移基板与所述目标基板对位，并根据所述第一目标位置信息对所述转移基板上的与所述第一转印位置对应的至少部分器件同时进行定点激光照射以将所述至少部分器件从所述转移基板转移到所述目标基板上。
  2. 根据权利要求1所述的转印方法，其中，进行定点激光照射包括：将所述第一目标位置信息输入具有空间光调制部件的激光印刷器中，以使所述空间光调制部件调制所述激光印刷器对所述转移基板上的与所述第一转印位置对应的至少部分器件同时进行激光照射。
  3. 根据权利要求1或2所述的转印方法，其中，比较所述第一位置信息与所述第二位置信息以得到所述第一目标位置信息包括：
    如果所述第一位置信息包括所述第二位置信息中记载的全部位置，则所述第一目标位置信息为所述第二位置信息。
  4. 根据权利要求3所述的转印方法，其中，所述第一位置信息包括多个所述第二位置信息记载的全部位置，多个所述第一目标位置信息为多个所述第二位置信息，所述转移基板被配置为与多个所述目标基板分别进行对位，然后根据多个所述第一目标位置信息将所述转移基板上的器件分别向多个所述目标基板转移。
  5. 根据权利要求1或2所述的转印方法，其中，所述第一位置信息包括多个子位置信息，比较所述第一位置信息与所述第二位置信息以得到所述第一目标位置信息还包括：
    如果所述多个子位置信息中的第一子位置信息仅包括所述第二位置信息中记载的部分位置，将所述第二位置信息划分为第一子位置信息涵盖的第一信息区和包括被第一子位置信息遗漏的位置信息的第二信息区，所述第一目标位置信息为所述第一信息区的位置信息。
  6. 根据权利要求5所述的转印方法，还包括：
    比较所述多个子位置信息中的第二子位置信息与所述第二信息区中的位置信息以得到记载第二转印位置的第二目标位置信息，其中，如果所述第二子位置信息包括所述第二信息区中记载的全部位置，则所述第二信息区中的位置信息为所述第二目标位置信息；
    根据所述第二目标位置信息，对所述转移基板上的与所述第二转印位置对应的至少部分器件同时进行定点激光照射。
  7. 根据权利要求1-6任一项所述的转印方法，其中，获取所述第一位置信息包括：对所述转移基板进行光学扫描以获得所述多个器件在所述转移基板上的位置信息。
  8. 根据权利要求2所述的转印方法，其中，所述激光印刷器的激光脉冲开启时间处于所述空间光调制部件的开启时间内。
  9. 根据权利要求1-8任一项所述的转印方法，其中，所述转移基板包括层叠设置的透明材料层以及粘附层，所述器件位于所述粘附层远离所述透明材料层的一侧。
  10. 根据权利要求1-9任一项所述的转印方法，其中，所述目标基板用于放置所述器件的一侧设置有缓冲层，所述缓冲层在所述目标基板上的正投影与所述器件在所述目标基板上的正投影没有交叠。
  11. 根据权利要求1-10任一项所述的转印方法，其中，形成所述器件之前包括：在所述原始衬底上形成牺牲层，且对所述牺牲层图案化以形成多个彼此分隔的牺牲层块；
    形成所述器件包括：在所述牺牲层块远离所述原始衬底的一侧形成用于形成所述器件的材料层，所述材料层包括位于所述牺牲层块上的部分以及相邻所述牺牲层块之间的间隔的部分；
    对所述材料层图案化以形成位于所述牺牲层块上的所述器件以及连接相邻的两个器件的连接部，所述连接部包括位于所述牺牲层块上的部分以及相邻所述牺牲层块之间的间隔的部分；
    去除所述牺牲层。
  12. 根据权利要求1-10任一项所述的转印方法，其中，形成所述器件包括：在所述原始衬底上形成牺牲层；在所述牺牲层远离所述原始衬底的一侧形成所述器件，
    形成所述器件以后包括：图案化所述牺牲层以使所述牺牲层在所述原始衬底上的正投影完全位于所述器件在所述原始衬底上的正投影内。
  13. 根据权利要求1-12任一项所述的转印方法，其中，所述器件为微发光二极管，所述微发光二极管在平行于所述原始衬底的方向的最大尺寸为5-20μm。
  14. 一种转印装置，包括：
    转移基板，被配置为将在原始衬底上形成的多个器件转移至目标基板；
    激光印刷器，包括空间光调制部件，被配置为根据所述转移基板上的所述多个器件的第一位置信息与所述目标基板上接受待转移器件的第二位置信息的比对结果，对所述激光印刷器进行调制以使所述激光印刷器对所述转移基板上的至少部分器件同时进行定点激光照射。
  15. 根据权利要求14所述的转印装置，还包括：
    数据处理器，与所述空间光调制部件电连接，被配置为将所述第一位置信息与所述第二位置信息进行对比以得到传输至所述空间光调制部件的目标位置信息，所述空间光调制部件根据所述目标位置信息调制所述激光印刷器对所述转移基板上位于转印位置的所述至少部分器件同时进行定点激光照射。
  16. 根据权利要求14或15所述的转印装置，其中，所述空间光调制部件为数字微镜阵列。
  17. 根据权利要求16所述的转印装置，其中，所述数字微镜阵列包括多个微镜，每个所述微镜在平行于所述转移基板的平面的形状为正方形，且尺寸为5.6*5.6μm-12*12μm。
  18. 根据权利要求14-17任一项所述的转印装置，还包括：缩放镜头，位于所述空间光调制部件面向所述转移基板的一侧。
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