Classifications

• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
  • H10P72/722—Details of electrostatic chucks
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D1/00—Processes for applying liquids or other fluent materials
  • B05D1/002—Processes for applying liquids or other fluent materials the substrate being rotated
  • B05D1/005—Spin coating
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
  • B05D1/00—Processes for applying liquids or other fluent materials
  • B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
  • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
  • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
  • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
• • H—ELECTRICITY
  • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
  • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
  • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
  • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
  • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
  • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
  • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
  • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material

Definitions

• ESC electrostatic chuck
• electrostatic chucks 100 typically include a handle or base plate 1 10 upon which multiple layers of a dielectric material are deposited to form the chuck body 120. Dispersed between adjacent layers of dielectric material may be patterned metal sheets 130 that serve as electrical components (e.g., electrodes, heaters, etc.).
• Conventional means for manufacturing an ESC having the configuration described above generally include using tape casting techniques to form the multiple layers of dielectric material on the handle.
• tape casting methods generally involve providing a moving belt onto which liquid dielectric material is dispersed from a reservoir. A doctor blade is used to ensure a constant height of the material dispersed from the reservoir on to the belt. As the dispersed material moves forward on the belt, it passes under a dryer in order to harden the material. Multiple tape casting passes can be used in order to build up the thickness of the chuck body.
• the method includes depositing at least one layer of a first dielectric material on a handle using spin coating and/or direct spraying, depositing a functional electric layer on the at least one layer of first dielectric material, and depositing at least one layer of a second dielectric material on the functional electric layer using spin coating and/or direct spraying. Additional optional steps, such as depositing a mechanical dielectric layer on the at least one layer of second dielectric material and patterning the mechanical dielectric layer, may also be carried out.
• the material of the handle is AI2O3, AIN or Y2O3.
• the first dielectric material and the second dielectric material are the same dielectric material, and the dielectric material is a material having a high dielectric constant.
• the material of the mechanical dielectric layer is the same material as the handle.
• Figure 1 illustrates a configuration of an electrostatic chuck according to the prior art.
• Figure 2 illustrates a tape casting technique according to the prior art.
• Figure 3 is a flow diagram illustrating a method of manufacturing an electrostatic chuck according to various embodiments described herein.
• Figure 4 illustrates an electrostatic chuck manufactured in accordance with methods described herein. DETAILED DESCRIPTION
• a method 300 for manufacturing an electrostatic chuck includes a step 310 of depositing at least one layer of first dielectric material on a handle using spin coating and/or direct spraying, a step 320 of depositing a functional electric layer on the at least one layer of a first dielectric material, and a step 330 of depositing at least one layer of a second dielectric material on the functional electric layer using spin coating and/or direct spraying.
• step 310 at least one layer of a first dielectric material is deposited on a handle using spin coating and/or direct spraying.
• Spin coating techniques generally call for a small amount of liquid dielectric material to be applied to the center of the handle, followed by rotating the handle at relatively high speeds in order to spread the liquid dielectric material by centrifugal force.
• Any apparatus known to be suitable for carrying out spin coating e.g., a spin coater or a spinner
• any suitable rotating speed that causes the dielectric material to spread may be used.
• the amount of material applied to the center of the handle is not limited and is generally determined based on the desired thickness of the layer being formed on the handle. In the event multiple layers of first dielectric material are deposited on the handle, the first layer is deposited directly on the handle using spin coating, and subsequent layers are formed on the preceding layer of dielectric material using spin coating.
• Direct spraying may generally be carried out using a spray gun.
• the spray gun is loaded with the liquid dielectric material and is then used to spray the liquid dielectric material directly onto the handle (or preceding layer of dielectric material when multiple layers are deposited).
• the direct spraying is generally carried out such that the layer of material deposited has a uniform thickness.
• the deposited layer will generally be cured after deposition in order to harden the material. Any suitable curing technique and parameters may be used. In some embodiments, the deposited material is cured by heating the material at a temperature of 600°C or higher.
• the deposition method may be exclusively spin coating, exclusively direct spraying, or some layers may be deposited using spin coating while other layers are deposited using direct spraying.
• the first dielectric material is generally not limited and may be any material known to be suitable for use as the chuck body of an ESC.
• the first dielectric material is a dielectric material having a dielectric constant higher than 3.
• the first dielectric material having a dielectric constant higher than 3 is a siloxane-based material.
• Such dielectric materials may further include a metal oxide component, such as AI2O3. However, a metal oxide component is not required.
• the high dielectric constant dielectric material can be made up of an oxide, nitride, boride, carbide or fluoride of any combination of yttrium, iridium, scandium, erbium, hafnium, silicon carbide, zirconium oxide, or any lanthanoid. However, such compounds are not required.
• the handle (also sometimes referred to as a plate or base plate) on which the first layer of first dielectric material is deposited may be made of any material known to be suitable for use as a handle of an ESC.
• the material of the handle is a ceramic material.
• Exemplary ceramic materials include, but are not limited to, AI2O3, AIN and Y2O3.
• Other suitable materials can be glass or silicon.
• Step 310 is carried out until the desired thickness of the first portion of the ESC is obtained.
• the desired thickness can be reached by depositing a single layer of first dielectric material having the desired thickness or by depositing multiple layers of the first dielectric material such that the thickness of the individual layers adds up to the desired overall thickness.
• step 320 is performed, in which a functional electric layer is deposited on the layer or layers of first dielectric material.
• a functional electric layer is deposited on the layer or layers of first dielectric material.
• Any material known to be suitable for use as a functional electric layer in an ESC can be used.
• the material is a metal material.
• the thickness of the metal layer is generally not limited and can be selected based on the electrical component being formed.
• the manner of forming the electrical layer can be, for example, via known PVD methods or by screen printing.
• the electric layer can be patterned as desired using any known patterning techniques.
• step 330 is performed, in which at least one layer of a second dielectric material is deposited on top of the functional electric layer.
• the at least one layer of second dielectric material is deposited on the functional electric layer using the same spin coating and/or direct spraying techniques as described above with respect to step 310.
• a single layer or multiple layers of second dielectric material can be deposited, so long as the desired thickness of the second portion of the chuck body is achieved.
• the second dielectric material is the same as the first dielectric material.
• steps 310, 320 and 330 may be repeated more than once such that the ESC includes multiple functional electric layers sandwiched between dielectric layers.
• a mechanical dielectric layer is formed on top of the at least one layer of second dielectric material.
• This mechanical dielectric layer serves as a sort of cap to the ESC structure. Any manner of depositing the mechanical dielectric layer on the at least one layer of second dielectric material can be used, including deposition via plasma spray, PVD, or a bonding process using ultra thin material.
• the material of the mechanical dielectric layer is not limited.
• the mechanical dielectric layer is the same material as the handle. Thus, for example, when the handle is made from AI2O3, AIN or Y2O3, the mechanical dielectric material can be made from the same AI2O3, AIN or Y2O3 material.
• the manufacturing method can further include a patterning step wherein the mechanical dielectric layer is patterned based on the desired application.
• Any suitable patterning techniques can be used, such as subtractive manufacturing.
• CNC grinding can be used to form helium channels, mesas, etc. on top of which the wafers can rest during use of the ESC.
• the ESC 400 includes a handle 410 on top of which is deposited a layer 420 of first dielectric material. While Figure 4 shows a single layer, it should be appreciated that layer 420 may actually be made of up several layers. On top of layer 420 is a patterned functional electric layer 430. On top of functional electric layer 430 is a layer 440 of the second dielectric material. While Figure 4 shows a single layer, it should be appreciated that layer 440 may actually be made up of several layers. On top of layer 440 is patterned mechanical dielectric layer 450. While Figure 4 shows a single layer 420, a single layer 430 and a single layer 440, it should be appreciated that the ESC could include one or more repeated stacks of layers 420, 430 and 440 on top of the stack shown in Figure 4.
• the ESC manufacturing methods described herein can provide numerous benefits over previously known ESC manufacturing methods. For example, the disclosed method utilizing spin coating and/or spraying reduces manufacturing costs as compared to methods that employ tape casting. Additionally, the ESC produced by manufacturing methods described herein may also have improved characteristics as compared to an ESC manufactured by previously known methods. For example, the ESC produced by the methods described herein may provide increased clamp force, reduced ESC voltage (which reduces electrostatic particle attraction), reduced electron mobility to improve chucking and dechucking performance at high temperatures, reduced or eliminated residual charging (which is also related to improved chucking and dechucking performance at high temperatures), increased operating temperatures, increased thermal response, and/or high heat flow.
• reduced ESC voltage which reduces electrostatic particle attraction
• reduced electron mobility to improve chucking and dechucking performance at high temperatures
• reduced or eliminated residual charging which is also related to improved chucking and dechucking performance at high temperatures
• increased operating temperatures increased thermal response, and/or high heat flow.

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• Engineering & Computer Science (AREA)
• Mechanical Engineering (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
• Formation Of Insulating Films (AREA)
• Application Of Or Painting With Fluid Materials (AREA)

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Citations (9)

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• 2020
  • 2020-03-10 US US16/814,775 patent/US11673161B2/en active Active
  • 2020-03-11 WO PCT/US2020/021996 patent/WO2020185835A1/en not_active Ceased
  • 2020-03-11 SG SG11202109712U patent/SG11202109712UA/en unknown
  • 2020-03-11 KR KR1020217032437A patent/KR102796742B1/ko active Active
  • 2020-03-11 CN CN202080020969.9A patent/CN113647009B/zh active Active
  • 2020-03-11 EP EP20769276.5A patent/EP3939157A4/en active Pending
  • 2020-03-11 MY MYPI2021005117A patent/MY210488A/en unknown
  • 2020-03-11 JP JP2021554687A patent/JP7547359B2/ja active Active
  • 2020-03-11 IL IL286108A patent/IL286108B2/en unknown
  • 2020-03-11 TW TW109107957A patent/TWI843819B/zh active

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