WO2020184192A1 - Procédé de formation de revêtement de nitrure - Google Patents

Procédé de formation de revêtement de nitrure Download PDF

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Publication number
WO2020184192A1
WO2020184192A1 PCT/JP2020/007900 JP2020007900W WO2020184192A1 WO 2020184192 A1 WO2020184192 A1 WO 2020184192A1 JP 2020007900 W JP2020007900 W JP 2020007900W WO 2020184192 A1 WO2020184192 A1 WO 2020184192A1
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Prior art keywords
nitride
base material
powder
coating
titanium
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PCT/JP2020/007900
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English (en)
Japanese (ja)
Inventor
福島　潤
博胤 滝澤
希 飯塚
彩 伊藤
明代 伊東
小川　徹
佐々木　啓一
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国立大学法人東北大学
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Priority to JP2021504911A priority Critical patent/JP7448157B2/ja
Publication of WO2020184192A1 publication Critical patent/WO2020184192A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B1/00—Single-crystal growth directly from the solid state
    • C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides

Definitions

  • the present invention relates to a method for forming a nitride coating.
  • a CVD method chemical vapor deposition
  • a PVD method physical vapor deposition
  • a plasma CVD method a laser CVD method, an ion injection method, or the like
  • a method of manufacturing a biological implant member by coating a nitride coating layer see, for example, Patent Document 1
  • a base material made of pure titanium by an ion plating method in a temperature range of 10 to 300 ° C.
  • There is a method of forming a titanium nitride layer to manufacture a dental implant member see, for example, Patent Document 2.
  • Patent Document 3 a nitride coating method that can be carried out in the atmosphere.
  • a substrate is placed in a powder of a substance having a ability to form a nitride in the air, and the powder is exposed to an alternating electric field by irradiating with microwaves to form a powder of the substance having a ability to form a nitride.
  • the surface of the base material is coated with a nitride produced by reacting with a nitrogen component in the atmosphere.
  • the nitride coating method described in Patent Document 3 the nitride can be coated on the surface of the base material by a simple process and a simple operation, but the coating is slightly uneven. Therefore, in recent years, the development of a technique for coating the nitride more uniformly has been expected.
  • the present invention has been made in view of such problems, and an object of the present invention is to provide a method for forming a nitride coating capable of coating a nitride more uniformly with a simple process and a simple operation. To do.
  • Patent Document 3 since it takes time to synthesize a nitride such as titanium nitride (see paragraph “0005” of Patent Document 3), a substance powder having a nitride forming ability is coated on the surface of the substrate. After that, the material is nitrided to form a nitride coating. Therefore, in order to achieve the above object, the present inventors may replace the coating process and the nitriding process, and coat what already exists as a nitride by using microwaves. This led to the present invention.
  • a nitride such as titanium nitride
  • the method for forming a nitride coating according to the present invention is to put a base material in a powder containing particles made of nitride as a main component, and irradiate the base material and the powder around the base material with microwaves. The surface of the base material is coated with the nitride.
  • the method for forming a nitride coating according to the present invention may be carried out in the atmosphere, as it is only necessary to put the base material in a powder containing particles made of nitride as a main component and irradiate the base material with microwaves. Therefore, it is not necessary to adjust the pressure or replace the atmosphere, and the nitride coating can be formed on the surface of the base material by a simple process and a simple operation. Further, the method for forming a nitride coating according to the present invention is different from the conventional method described in Patent Document 3, which utilizes a powder of a substance having a nitride forming ability by using particles made of nitride. The nitride can be coated more uniformly.
  • the thickness of the nitride coating can be increased by lengthening the irradiation time of the microwave, and the thickness of the nitride coating can be adjusted by the irradiation time of the microwave. it can. Further, the particles composed of the nitride remaining after the coating is formed can be reused when coating another substrate, which is efficient. Further, since it is not necessary to use the nitride particles and form the nitride by microwave irradiation, the microwave irradiation condition can be relaxed.
  • the powder into which the base material is placed is mainly composed of particles composed of nitrides, and may contain the largest amount of particles composed of nitrides, in addition to the particles. Although other particles such as oxide particles may be contained, it is preferable that the particles are composed of only particles having no nitride forming ability.
  • the frequency of the microwave is preferably 0.3 GHz to 30 GHz, more preferably 0.9 GHz or higher, and even more preferably 1 GHz to 5 GHz. .. In these cases, the nitride can be coated more uniformly.
  • nitride in the method of forming the nitride coating according to the present invention, may be any one, for example, limited to titanium nitride (TiN, Ti 2 N, TiN x) not, for example, lithium nitride (Li 3 N), yttrium nitride (YN), zirconium nitride (ZrN), hafnium nitride (such as HfN), vanadium nitride (VN, etc.), niobium nitride (NbN), tantalum nitride (TaN, etc.) , chromium nitride (CrN, Cr 2 N), molybdenum nitride (MoN, Mo 2 N), tungsten nitride (WN), tungsten nitride (W 2 N), manganese nitride (Mn 2 N, Mn 3 N 2, Mn
  • the titanium nitride coating is a golden-colored, mirror-finished ultra-hard film, has conductivity, high strength, high toughness and resistance. It has excellent impact resistance, thermal shock resistance, abrasion resistance, and corrosion resistance.
  • coatings such as zirconium nitride, niobium nitride, and tantalum nitride have high strength, high toughness, excellent impact resistance, wear resistance, and corrosion resistance, and have unique electrical and magnetic properties, as well as optically. Has favorable properties.
  • the aluminum nitride coating forms an oxide film by heating in the air, it has an effect of suppressing the progress of oxidation, has higher thermal conductivity, and is excellent in heat resistance and corrosion resistance.
  • the silicon nitride coating is electrically insulating, has high strength and toughness, and is excellent in impact resistance, thermal shock resistance, wear resistance, and corrosion resistance.
  • the base material may be any material as long as it is not dissolved by irradiation with microwaves, and may be made of, for example, metal or ceramics.
  • the base material made of metal include iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), silver (Ag), gold (Au), zinc (Zn), aluminum (Al), and the like.
  • Examples of the base material made of ceramics include silica (SiO 2 ), alumina (Al 2 O 3 ), tria (ThO 2 ), magnesia (MgO), itria (Y 2 O 3 ), zirconia (ZrO 2 ), and oxidation.
  • Oxides such as zinc (ZnO), silicon carbide (SiC), boron carbide (B 4 C), titanium carbide (TiC), chromium carbide (Cr 4 C 3 ), tantalum carbide (TaC), vanadium carbide (VC) , Zirconium Carbide (ZrC), Tungsten Carbide (WC) and other carbides, nitrides, borates, silicates, carbon and other non-oxides.
  • ZnO zinc
  • SiC silicon carbide
  • B 4 C boron carbide
  • TiC titanium carbide
  • Cr 4 C 3 chromium carbide
  • TaC tantalum carbide
  • VC vanadium carbide
  • ZrC Zirconium Carbide
  • WC Tungsten Carbide
  • those in which the nitride coating is formed on the surface of the ceramic base material by the method for forming the nitride coating according to the present invention are, for example, magnetic materials, magnetic optical materials, superconductors, conductive materials, semiconductors, and dielectrics.
  • the base material and the powder around it it is preferable to heat the base material and the powder around it to 600 ° C. to 1300 ° C. by irradiating the microwave.
  • the nitride can be coated more uniformly.
  • the heating temperature changes depending on the type of nitride. For example, when the nitride is made of titanium nitride (TiN), the substrate and its surrounding powder are heated to 850 ° C. to 1100 by microwave irradiation. It is preferable to heat to ° C.
  • a method for forming a nitride coating capable of coating a nitride more uniformly with a simple process and a simple operation.
  • a longitudinal section showing a method for forming a nitride coating according to an embodiment of the present invention (a) a state in which powder and a base material are placed in a container, and (b) a state in which a nitride coating is formed by irradiation with microwaves. It is a top view.
  • Nitride coating formed Nitride coating formed, (c) Nitride coating of a comparative example formed on the surface of a substrate by microwave irradiation at 900 ° C. for 45 minutes by a conventional method using titanium powder, (d) It is an optical micrograph which shows the nitride coating of a comparative example formed on the back surface of a base material.
  • the method for forming a nitride coating according to the embodiment of the present invention (a) 950 ° C., 30 minutes, (b) 950 ° C., 60 minutes, (c) 1000 ° C., 30 minutes, (d) 1000 ° C., 60 minutes.
  • (E) 1050 ° C., 30 minutes, (f) 1050 ° C., 60 minutes, is an optical micrograph showing a nitride coating formed on the surface of the substrate by microwave irradiation.
  • XRD X-ray diffraction
  • FIG. 2 (a) A graph showing the surface roughness of the nitride coating formed on the surface of the base material by microwave irradiation at 900 ° C. for 45 minutes shown in FIG. 2 (a),
  • FIG. 2 (b). 5 is a graph showing the surface roughness of the nitride coating of Comparative Example formed on the surface of the base material by microwave irradiation at 900 ° C. for 45 minutes shown in c).
  • the method for forming a nitride coating according to the embodiment of the present invention which is a conventional method using a nitride coating (the present invention) formed on the surface of a substrate by microwave irradiation at 950 ° C. for 30 minutes, and titanium powder.
  • the nitride coating of the comparative example (comparative example) formed on the surface of the base material by microwave irradiation at 950 ° C. for 30 minutes, and the titanium nitride formed on the surface of the base material by the ion plating method.
  • FIG. 1 to 7 show a method of forming a nitride coating according to the embodiment of the present invention.
  • a container 11 is filled with a powder containing particles made of nitride as a main component, and the powder thereof.
  • the base material 13 is put in 12.
  • the container 11 is a quartz tube silica wool 14 is laid on the bottom
  • the powder 12 is a powder of titanium nitride (TiN, Ti 2 N, TiN x)
  • the base material 13 is a disk-shaped Ti-6Al-4V alloy. Titanium nitride does not have a nitride forming ability.
  • the entire container 11, that is, the base material 13 and the powder 12 around it is irradiated with microwaves.
  • the surface of the base material 13 is coated with the nitride, and the nitride coating 15 can be formed.
  • the frequency of the microwave to be irradiated is preferably 0.3 GHz to 30 GHz, more preferably 0.9 GHz to 30 GHz, and even more preferably 1 GHz to 5 GHz. Further, it is preferable to heat the base material 13 and the powder 12 around the base material 13 to 600 ° C. to 1300 ° C. by irradiation with microwaves.
  • nitride placed in the container 11 is not limited to titanium nitride (TiN, Ti 2 N, TiN x), for example, lithium nitride (Li 3 N), yttrium nitride (YN), zirconium nitride (ZrN), hafnium nitride (HfN, etc.), Yttrium Nitride (VN, etc.), Niobide Nitride (NbN), Tantalum Nitride (TaN, etc.), Chromium Nitride (CrN, Cr 2 N), Molybdenum Nitride (MoN, Mo 2 N), Titanium Nitride (WN) , Titanium Nitride (W 2 N), Manganese Nitride (Mn 2 N, Mn 3 N 2 , Mn 4 N, etc.), Iron Nitride (Fe N, Fe 2 N, Fe 3 N, Fe 4 N, Fe 16 N 2 ), Titanium Nitride (CoN, Co 2
  • the base material 13 is not limited to the titanium alloy, and for example, iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), silver (Ag), gold (Au), zinc (Zn), and the like.
  • Metals made of alloys silica (SiO 2 ), alumina (Al 2 O 3 ), tria (ThO 2 ), magnesia (MgO), itria (Y 2 O 3 ), zirconia (ZrO 2 ), zinc oxide (ZnO) Oxides such as silicon carbide (SiC), boron carbide (B 4 C), titanium carbide (TiC), chromium carbide (Cr 4 C 3 ), tantalum carbide (TaC), vanadium carbide (VC), zirconium carbide ( Ceramics containing carbides such as ZrC) and tungsten carbide (WC), nitrides, borides, calides, non-oxides such as carbon and the like may be used.
  • the method for forming the nitride coating according to the embodiment of the present invention is only required to put the base material 13 in the powder 12 containing particles made of nitride as a main component and irradiate the base material with microwaves, and also in the atmosphere. It can be carried out at. Therefore, it is not necessary to adjust the pressure or replace the atmosphere, and the nitride coating 15 can be formed on the surface of the base material 13 by a simple process and a simple operation. Further, in the method for forming a nitride coating according to the embodiment of the present invention, the nitride can be uniformly coated by using particles made of nitride.
  • the thickness of the nitride coating 15 can be increased by lengthening the microwave irradiation time, and the thickness of the nitride coating 15 can be increased by the microwave irradiation time. Can be adjusted. Further, the particles composed of the nitride remaining after the coating is formed can be reused when coating another substrate, which is efficient. Further, since it is not necessary to use the nitride particles and form the nitride by microwave irradiation, the microwave irradiation condition can be relaxed.
  • the nitride coating 15 was formed on the surface of the base material 13 by using the method for forming the nitride coating according to the embodiment of the present invention shown in FIG.
  • a quartz tube having an outer diameter of 23 mm and an inner diameter of 20 mm is filled in the container 11.
  • TiN titanium nitride
  • a Ti-6Al-4V alloy was used as a base material 13 and the outer diameter is 14.5 mm and the thickness is 1 mm.
  • a Ti-6Al-4V alloy was used.
  • a magnetron-type multimode microwave irradiation device was used to irradiate 2.45 GHz microwaves. Further, during the irradiation with microwaves, the temperature of the upper surface of the powder 12 filled in the container 11 was measured with a radiation thermometer.
  • microwaves were irradiated so that the temperature measured by the radiation thermometer was constant at a predetermined temperature for a predetermined time.
  • the temperature measured at the time of microwave irradiation and the time for maintaining the temperature were set to 900 ° C., 950 ° C., 1000 ° C. and 1050 ° C., and 30 minutes, 45 minutes and 60 minutes, respectively.
  • titanium (Ti) powder particle size 45 ⁇ m or less, manufactured by High Purity Chemical Co., Ltd.
  • the other nitrides are subjected to the same conditions. A coating was formed.
  • FIG. 2 shows optical micrographs of the nitride coating on the front surface and the back surface of the sample formed by microwave irradiation at 900 ° C. for 45 minutes using titanium nitride powder and titanium powder (comparative example), respectively.
  • FIG. 3 shows optical micrographs of the nitride coating on the sample surface formed by microwave irradiation at 950 ° C., 1000 ° C., and 1050 ° C. for 30 minutes and 60 minutes, respectively, using titanium nitride powder. ..
  • the nitride coating of the comparative example formed using the titanium powder had uneven surfaces.
  • the nitride coating formed by using the titanium nitride powder has a uniform surface and almost no unevenness, and is compared with the one using the titanium powder. It was confirmed that the nitride was uniformly coated. It was also confirmed that the nitride coating formed using the titanium nitride powder had a beautiful appearance and a good appearance, and the film thickness of the nitride coating was thinner than that using the titanium powder. ..
  • the nitride is uniformly coated even when the temperature and time during microwave irradiation are 950 ° C to 1050 ° C and 30 minutes to 60 minutes. confirmed.
  • the nitride coating increased as the temperature during microwave irradiation increased and as the microwave irradiation time increased.
  • the surface of the sample on which the nitride coating was formed at 900 ° C. and 45 minutes shown in FIGS. 2 (a) and 2 (c) was measured by an X-ray diffraction method and the surface roughness was measured. went.
  • the measurement result of X-ray diffraction is shown in FIG. 4, and the measurement result of surface roughness (Roughness) is shown in FIG.
  • the nitride coating of the comparative example formed by using the titanium powder has the peak of TiN x as the main phase and uses the titanium nitride powder shown in FIG. 4 (a). It was confirmed that the peak of TiN was smaller than that of the above. From this, it can be said that the nitriding of the coated titanium powder has not sufficiently progressed in the comparative example.
  • FIG. 6 also shows the measurement results of the Vickers hardness of the base material for comparison. As shown in FIG. 6, it was confirmed that the Vickers hardness was increased by forming the nitride coating and was larger than 600 HV.
  • a cell experiment was conducted on a sample in which a nitride coating was formed at 950 ° C. for 30 minutes.
  • 1.0 ⁇ 10 4 rat gingival-derived cells were seeded on the surface of each sample, and 72 hours later, a reagent was added to each sample to develop color of living cells, and the absorbance was measured. The viable cell rate was calculated. Absorbance was measured 5 times for each sample, and the average value and standard deviation of the viable cell rate were calculated.
  • the nitride coating formed by using the titanium nitride powder has an average viable cell rate of 99.5%, and the titanium nitride coating by the ion plating method (average viable cell rate). : 113.7%), but superior to the one using titanium powder (average viable cell rate: 70.2%), and it was confirmed that the viable cell rate was almost the same as that of pure titanium. .. From this result, it is considered that the nitride coating formed by using the titanium nitride powder can be used as a coating for, for example, a dental implant member, etc., instead of pure titanium or the like.

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  • Metallurgy (AREA)
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Abstract

Le problème décrit par la présente invention est de fournir un procédé de formation d'un revêtement de nitrure, grâce auquel il devient possible de revêtir plus uniformément un nitrure par un processus direct et des étapes simples. La solution de l'invention porte sur un matériau de base (13) qui est placé dans une poudre (12) qui contient, en tant que constituant principal de cette dernière, des particules formées à partir d'un nitrure, puis le matériau de base (13) et une partie de la poudre (12) qui est située autour du matériau de base (13) sont exposés à une hyperfréquence afin de revêtir la surface du matériau de base (13) de nitrure, formant ainsi un revêtement de nitrure (15). Il est préférable que la fréquence de l'hyperfréquence soit de 0,3 à 30 GHz. Il est également préférable que le matériau de base (13) et la partie de la poudre (12) qui se situe autour du matériau de base (13) soient chauffés de 600 à 1 300 °C par l'exposition à l'hyperfréquence.
PCT/JP2020/007900 2019-03-14 2020-02-27 Procédé de formation de revêtement de nitrure WO2020184192A1 (fr)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN117179569A (zh) * 2023-08-09 2023-12-08 九阳股份有限公司 锅具及锅具制造方法

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JPH10212168A (ja) * 1997-01-29 1998-08-11 Kyocera Corp セラミック加熱装置
JP2007084896A (ja) * 2005-09-26 2007-04-05 Tohoku Univ 窒化物コーティング法
JP2007223137A (ja) * 2006-02-23 2007-09-06 National Institute Of Advanced Industrial & Technology マイクロ波加熱用鋳込み型及びセラミックス焼結体の製造方法

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WO2007088961A1 (fr) 2006-02-03 2007-08-09 Takata Corporation Coussin de sécurité gonflable et système de coussin de sécurité gonflable
JP5058672B2 (ja) 2007-05-14 2012-10-24 新日本製鐵株式会社 金属表面皮膜の封孔処理方法、および金属表面皮膜の封孔処理装置

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Publication number Priority date Publication date Assignee Title
JPH10212168A (ja) * 1997-01-29 1998-08-11 Kyocera Corp セラミック加熱装置
JP2007084896A (ja) * 2005-09-26 2007-04-05 Tohoku Univ 窒化物コーティング法
JP2007223137A (ja) * 2006-02-23 2007-09-06 National Institute Of Advanced Industrial & Technology マイクロ波加熱用鋳込み型及びセラミックス焼結体の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117179569A (zh) * 2023-08-09 2023-12-08 九阳股份有限公司 锅具及锅具制造方法

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