WO2020148600A1 - 表示装置、表示モジュール、及び電子機器 - Google Patents

表示装置、表示モジュール、及び電子機器 Download PDF

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Publication number
WO2020148600A1
WO2020148600A1 PCT/IB2020/050044 IB2020050044W WO2020148600A1 WO 2020148600 A1 WO2020148600 A1 WO 2020148600A1 IB 2020050044 W IB2020050044 W IB 2020050044W WO 2020148600 A1 WO2020148600 A1 WO 2020148600A1
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Prior art keywords
light emitting
layer
light
emitting element
display device
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2020/050044
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English (en)
French (fr)
Japanese (ja)
Inventor
太介 鎌田
大介 久保田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to KR1020217024894A priority Critical patent/KR102950121B1/ko
Priority to CN202080009798.XA priority patent/CN113302745A/zh
Priority to US17/422,527 priority patent/US12219852B2/en
Priority to JP2020566348A priority patent/JP7665336B2/ja
Publication of WO2020148600A1 publication Critical patent/WO2020148600A1/ja
Anticipated expiration legal-status Critical
Priority to US19/023,842 priority patent/US20250169321A1/en
Priority to JP2025064071A priority patent/JP2025100654A/ja
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/351—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels comprising more than three subpixels, e.g. red-green-blue-white [RGBW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/201—Filters in the form of arrays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G09F9/335—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes being organic light emitting diodes [OLED]
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F55/00—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto
    • H10F55/18—Radiation-sensitive semiconductor devices covered by groups H10F10/00, H10F19/00 or H10F30/00 being structurally associated with electric light sources and electrically or optically coupled thereto wherein the radiation-sensitive semiconductor devices and the electric light source share a common body having dual-functionality of light emission and light detection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
    • H10K39/30—Devices controlled by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • One embodiment of the present invention relates to a display device, a display module, and an electronic device.
  • One embodiment of the present invention relates to a display device including a light receiving element and a light emitting element.
  • the technical field of one embodiment of the present invention includes a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, an electronic device, a lighting device, an input device (such as a touch sensor), and an input/output device (such as a touch panel). ), their driving method, or those manufacturing methods can be mentioned as an example.
  • display devices are expected to be applied to various uses.
  • examples of the use of the large-sized display device include a home-use television device (also referred to as a television or a television receiver), a digital signage (digital signage), a PID (Public Information Display), and the like.
  • a home-use television device also referred to as a television or a television receiver
  • digital signage digital signage
  • PID Public Information Display
  • smartphones and tablet terminals equipped with a touch panel are being developed.
  • a light emitting device having a light emitting element As a display device, for example, a light emitting device having a light emitting element has been developed.
  • a light-emitting element also referred to as an EL element
  • EL electroluminescence
  • Patent Literature 1 discloses a flexible light emitting device to which an organic EL element is applied.
  • An object of one embodiment of the present invention is to provide a display device having a light detection function.
  • An object of one embodiment of the present invention is to provide a highly convenient display device.
  • One object of one embodiment of the present invention is to provide a multifunctional display device.
  • An object of one embodiment of the present invention is to provide a display device with a high aperture ratio.
  • An object of one embodiment of the present invention is to provide a display device with high definition.
  • One object of one embodiment of the present invention is to provide a novel display device.
  • An object of one embodiment of the present invention is to improve manufacturing yield of a display device having a light detection function.
  • One object of one embodiment of the present invention is to reduce the number of steps of a display device having a light detection function.
  • One object of one embodiment of the present invention is to reduce manufacturing cost of a display device having a light detection function.
  • a display device of one embodiment of the present invention includes a light-receiving element, a first light-emitting element, and a second light-emitting element in a display portion.
  • the light receiving element has a first pixel electrode, an active layer, and a common electrode.
  • the first light emitting element has a second pixel electrode, a first light emitting layer, and a common electrode.
  • the second light emitting element has a third pixel electrode, a second light emitting layer, and a common electrode.
  • the active layer has an organic compound.
  • the active layer is located between the first pixel electrode and the common electrode.
  • the first light emitting layer is located between the second pixel electrode and the common electrode.
  • the second light emitting layer is located between the third pixel electrode and the common electrode.
  • the first light-emitting layer is further located between the first pixel electrode and the common electrode and/or between the third pixel electrode and the common electrode.
  • a display device of one embodiment of the present invention includes a light-receiving element and a first light-emitting element in a display portion.
  • the light receiving element has a first pixel electrode, an active layer, a first light emitting layer, and a common electrode.
  • the first light emitting element has a second pixel electrode, a first light emitting layer, and a common electrode.
  • the active layer has an organic compound. The active layer is located between the first pixel electrode and the common electrode.
  • the first light emitting layer is located between the first pixel electrode and the common electrode and between the second pixel electrode and the common electrode.
  • the display portion further includes a second light emitting element.
  • the second light emitting element preferably has a third pixel electrode, a first light emitting layer, a second light emitting layer, and a common electrode.
  • the first light emitting layer and the second light emitting layer are preferably located between the third pixel electrode and the common electrode, respectively.
  • the first light emitting element preferably emits the light emitted by the first light emitting layer.
  • the second light emitting element preferably emits the light emitted by the second light emitting layer.
  • the first light-emitting element further include an active layer.
  • the active layer is preferably located between the second pixel electrode and the common electrode.
  • the display portion includes a light-receiving element, a first light-emitting element, a second light-emitting element, a first coloring layer, and a second coloring layer.
  • the light receiving element has a first pixel electrode, an active layer, and a common electrode.
  • the first light emitting element has a second pixel electrode, a first light emitting layer, and a common electrode.
  • the second light emitting element has a third pixel electrode, a first light emitting layer, and a common electrode.
  • the active layer has an organic compound.
  • the active layer is located between the first pixel electrode and the common electrode.
  • the first light emitting layer is located between the second pixel electrode and the common electrode and between the third pixel electrode and the common electrode.
  • the light emitted from the first light emitting element is extracted from the display unit as light of the first color through the first colored layer.
  • the light emitted from the second light emitting element is extracted from the display unit as light of the second color via the second colored layer
  • the first light-emitting element and the second light-emitting element further include a second light-emitting layer.
  • the second light emitting layer is preferably located between the second pixel electrode and the common electrode and between the third pixel electrode and the common electrode. It is preferable that the first light emitting layer and the second light emitting layer emit lights having different wavelengths.
  • the display portion preferably further includes a third light-emitting element and a third colored layer.
  • the third light emitting element has a fourth pixel electrode, a third light emitting layer, and a common electrode.
  • the third light emitting layer is preferably located between the second pixel electrode and the common electrode, between the third pixel electrode and the common electrode, and between the fourth pixel electrode and the common electrode.
  • the light emitted by the third light emitting element is preferably extracted from the display unit as light of the third color through the third colored layer.
  • the light receiving element and the first light emitting element further include a common layer.
  • the common layer is preferably located between the first pixel electrode and the common electrode and between the second pixel electrode and the common electrode.
  • the display unit further includes a partition.
  • the partition wall preferably covers an end portion of the first pixel electrode and an end portion of the second pixel electrode.
  • the partition preferably has a function of electrically insulating the first pixel electrode and the second pixel electrode.
  • the partition preferably has a function of absorbing at least part of light emitted by the first light-emitting element.
  • the display unit further includes a colored layer.
  • the colored layer preferably has a portion in contact with one or both of the top surface and the side surface of the partition wall.
  • the colored layer preferably has a color filter or a black matrix.
  • the display unit further includes a lens.
  • the lens preferably has a portion overlapping with the light receiving element.
  • the light transmitted through the lens preferably enters the light receiving element.
  • the display unit further includes a light shielding layer. It is preferable that the end of the light shielding layer overlaps the end of the lens.
  • the light shielding layer preferably overlaps the partition.
  • the display unit preferably has flexibility.
  • One embodiment of the present invention is a module having a display device having any of the above structures and having a connector such as a flexible printed circuit board (Flexible Printed Circuit, hereinafter referred to as FPC) or TCP (Tape Carrier Package) attached thereto, Alternatively, it is a module such as a module in which an integrated circuit (IC) is mounted by a COG (Chip On Glass) method or a COF (Chip On Film) method.
  • FPC Flexible Printed Circuit
  • TCP Transmission Carrier Package
  • One embodiment of the present invention is an electronic device including the above module and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button.
  • a display device having a light detection function can be provided.
  • a highly convenient display device can be provided.
  • a multi-functional display device can be provided.
  • a display device with a high aperture ratio can be provided.
  • a display device with high definition can be provided.
  • a novel display device can be provided.
  • the manufacturing yield of a display device having a light detection function can be improved.
  • the number of steps for a display device having a light detection function can be reduced.
  • manufacturing cost of a display device having a light detection function can be reduced.
  • FIG. 1A to 1D are cross-sectional views showing an example of a display device.
  • 1E to 1H are top views showing an example of a pixel.
  • FIG. 2 is a cross-sectional view showing an example of the display device.
  • 3A and 3B are cross-sectional views showing an example of a display device.
  • 4A and 4B are cross-sectional views showing an example of a display device.
  • 5A and 5B are cross-sectional views showing an example of a display device.
  • 6A and 6B are cross-sectional views showing an example of a display device.
  • 7A and 7B are cross-sectional views showing an example of a display device.
  • 8A to 8C are cross-sectional views showing an example of a display device.
  • FIG. 9A to 9C are cross-sectional views showing an example of a display device.
  • FIG. 10 is a perspective view showing an example of a display device.
  • FIG. 11 is a cross-sectional view showing an example of the display device.
  • 12A and 12B are cross-sectional views showing an example of a display device.
  • FIG. 13A is a cross-sectional view showing an example of a display device.
  • FIG. 13B is a cross-sectional view showing an example of a transistor.
  • FIG. 14 is a cross-sectional view showing an example of a display device.
  • 15A and 15B are circuit diagrams showing an example of a pixel circuit.
  • 16A and 16B are diagrams illustrating an example of a driving method of the display device.
  • 17A and 17B are diagrams illustrating an example of a driving method of the display device.
  • 18A and 18B are diagrams illustrating examples of electronic devices.
  • 19A to 19D are diagrams illustrating examples of electronic devices.
  • 20A to 20F are diagrams illustrating examples of electronic devices.
  • FIG. 21 is a diagram showing voltage-luminance characteristics of the light emitting/receiving element.
  • FIG. 22 is a diagram showing the luminance-external quantum efficiency characteristics of the light emitting/receiving element.
  • FIG. 23 is a diagram showing the wavelength dependence of the light receiving sensitivity of the light emitting/receiving element.
  • film and the term “layer” can be interchanged with each other depending on the case or circumstances.
  • conductive layer can be changed to the term “conductive film”.
  • insulating film can be changed to the term “insulating layer”.
  • the display device of this embodiment includes a light-receiving element and a light-emitting element in the display portion.
  • light-emitting elements are arranged in matrix in the display portion, and an image can be displayed on the display portion.
  • light receiving elements are arranged in matrix in the display portion, and the display portion also has one or both of an imaging function and a sensing function.
  • the display unit can be used as an image sensor or a touch sensor. That is, by detecting light on the display unit, it is possible to capture an image and detect proximity or contact of an object (finger, pen, etc.).
  • the display device of this embodiment can use the light emitting element as a light source of the sensor. Therefore, it is not necessary to provide a light receiving portion and a light source separately from the display device, and the number of parts of the electronic device can be reduced.
  • the light-receiving element when the object reflects the light emitted from the light-emitting element included in the display portion, the light-receiving element can detect the reflected light. Therefore, even in a dark place, imaging or touch (or proximity) detection can be performed. It is possible.
  • the display device of this embodiment has a function of displaying an image using a light-emitting element. That is, the light emitting element functions as a display element.
  • an EL element such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode).
  • a light-emitting substance included in an EL element a substance that emits fluorescence (a fluorescent material), a substance that emits phosphorescence (a phosphorescent material), an inorganic compound (a quantum dot material, or the like), or a substance that exhibits heat-activated delayed fluorescence (heat-activated delayed fluorescence) (Thermally Activated Delayed Fluorescence (TADF) material) and the like.
  • an LED such as a micro LED (Light Emitting Diode) can be used as the light emitting element.
  • the display device of this embodiment has a function of detecting light using a light-receiving element.
  • the display device of the present embodiment can capture an image using the light receiving element.
  • an image sensor can be used to acquire data such as a fingerprint, a palm print, or an iris. That is, the biometric sensor can be incorporated in the display device of this embodiment. By incorporating the biometric sensor in the display device, the number of parts of the electronic device can be reduced, and the electronic device can be made smaller and lighter than in the case where the biometric sensor is provided separately from the display device. ..
  • the image sensor can be used to acquire data such as a user's facial expression, eye movement, or change in pupil diameter.
  • data such as a user's facial expression, eye movement, or change in pupil diameter.
  • the physical and mental information of the user can be obtained.
  • VR Virtual Reality
  • AR Augmented Reality
  • MR Mated Reality
  • the display device can detect the proximity or contact of the object by using the light receiving element.
  • the light receiving element for example, a pn type or pin type photodiode can be used.
  • the light receiving element functions as a photoelectric conversion element that detects light incident on the light receiving element and generates electric charges. The amount of charges generated is determined based on the amount of incident light.
  • an organic photodiode having a layer containing an organic compound as the light receiving element.
  • the organic photodiode is easy to be thin, lightweight, and has a large area, and has a high degree of freedom in shape and design, and thus can be applied to various display devices.
  • an organic EL element is used as a light emitting element and an organic photodiode is used as a light receiving element.
  • the organic EL element and the organic photodiode can be formed on the same substrate. Therefore, the organic photodiode can be built in the display device using the organic EL element.
  • the number of film forming steps becomes very large. Since the organic photodiode has many layers that can be configured in common with the organic EL element, it is possible to suppress an increase in the number of film deposition steps by collectively depositing layers that can be configured in common. In addition, even if the number of times of film formation is the same, by reducing the number of layers that are formed only on some elements, the influence of the deviation of the film formation pattern can be reduced and the film can be attached to a film formation mask (metal mask, etc.). It is possible to reduce the effect of dust (including small foreign matters called particles). As a result, the manufacturing yield of the display device can be increased.
  • the light-emitting layer included in the first light-emitting element which emits the first color is provided commonly to one or both of the light-receiving element and the second light-emitting element which emits the second color. Accordingly, the number of layers that are separately formed for the light-receiving element, the first light-emitting element, and the second light-emitting element can be reduced, and the manufacturing yield of the display device can be increased.
  • the hole injection layer, the hole transport layer, the electron transport layer, and the electron injection layer be a layer common to the light receiving element, the first light emitting element, and the second light emitting element. .. Accordingly, the number of film formations and the number of masks can be reduced, and the manufacturing process and manufacturing cost of the display device can be reduced.
  • the layer which the light-receiving element, the first light-emitting element, and the second light-emitting element have in common may have different functions in the light-emitting element and the light-receiving element. In the present specification, constituent elements are referred to based on the function of the light emitting element.
  • the hole injection layer functions as a hole injection layer in the light emitting element and functions as a hole transport layer in the light receiving element.
  • the electron injection layer functions as an electron injection layer in the light emitting element and functions as an electron transport layer in the light receiving element.
  • FIGS. 1A to 1D are cross-sectional views of a display device of one embodiment of the present invention.
  • a display device 50A illustrated in FIG. 1A includes a layer 53 having a light receiving element and a layer 57 having a light emitting element between a substrate 51 and a substrate 59.
  • a display device 50B illustrated in FIG. 1B includes a layer 53 including a light-receiving element, a layer 55 including a transistor, and a layer 57 including a light-emitting element between a substrate 51 and a substrate 59.
  • the display device 50A and the display device 50B have a structure in which red (R), green (G), and blue (B) light is emitted from the layer 57 having a light emitting element.
  • the light receiving element included in the layer 53 having the light receiving element can detect light incident from the outside of the display device 50A or the display device 50B.
  • a display device of one embodiment of the present invention includes a plurality of pixels arranged in matrix.
  • One pixel has one or more sub-pixels.
  • One subpixel has one light emitting element.
  • a pixel has three subpixels (R, G, and B colors, or yellow (Y), cyan (C), and magenta (M) colors) or subpixels.
  • R, G, B, four colors of white (W), or four colors of R, G, B, Y, etc.) can be applied.
  • the pixel has a light receiving element.
  • the light receiving element may be provided in all the pixels or may be provided in some pixels.
  • one pixel may have a plurality of light receiving elements.
  • the layer 55 including a transistor preferably includes a first transistor and a second transistor.
  • the first transistor is electrically connected to the light receiving element.
  • the second transistor is electrically connected to the light emitting element.
  • the display device of one embodiment of the present invention may have a function of detecting an object such as a finger which is in contact with the display device. For example, as shown in FIG. 1C, the light emitted from the light emitting element in the layer 57 including the light emitting element is reflected by the finger 52 in contact with the display device 50B, so that the light receiving element in the layer 53 including the light receiving element reflects the light. Detect light. This makes it possible to detect that the finger 52 has come into contact with the display device 50B.
  • the display device of one embodiment of the present invention may have a function of detecting or imaging an object which is close to (not in contact with) the display device 50B as illustrated in FIG. 1D.
  • the pixels illustrated in FIGS. 1E and 1F include three subpixels R, G, and B (three light emitting elements) and a light receiving element PD.
  • FIG. 1E is an example in which three subpixels and light receiving elements PD are arranged in a 2 ⁇ 2 matrix, and in FIG. 1F, three subpixels and light receiving elements PD are arranged in one horizontal row. It is an example that has been done.
  • the pixel illustrated in FIG. 1G includes four sub-pixels (four light emitting elements) of R, G, B, and W, and a light receiving element PD.
  • the pixel shown in FIG. 1H has three subpixels of R, G, and B, a light emitting element IR that emits infrared light, and a light receiving element PD.
  • the light receiving element PD preferably has a function of detecting infrared light.
  • the light receiving element PD may have a function of detecting both visible light and infrared light.
  • the wavelength of light detected by the light receiving element PD can be determined according to the application of the sensor.
  • a display device of one embodiment of the present invention includes a top emission type which emits light in a direction opposite to a substrate where a light emitting element is formed, a bottom emission type which emits light toward a substrate side where a light emitting element is formed, and a double-sided type. It may be any of the dual emission type that emits light to.
  • a top emission type display device will be described as an example.
  • the display devices shown in FIGS. 2, 3A, and 3B include a light-emitting element 47B that emits blue (B) light and a light-emitting element that emits green (G) light over the substrate 151 through the layer 55 having a transistor. 47 G, a light emitting element 47 R that emits red (R) light, and a light receiving element 46.
  • the light emitting element 47B, the light emitting element 47G, and the light emitting element 47R have a pixel electrode 191 and a common electrode 115, respectively.
  • a case where the pixel electrode 191 functions as an anode and the common electrode 115 functions as a cathode will be described as an example.
  • the light receiving element 46 has a pixel electrode 181 and a common electrode 115.
  • the pixel electrode 181 functions as an anode and the common electrode 115 functions as a cathode. That is, the light receiving element 46 is driven by applying a reverse bias between the pixel electrode 181 and the common electrode 115 to detect the light incident on the light receiving element 46, generate an electric charge, and take out as a current. ..
  • the pixel electrode 191 and the pixel electrode 181 can be formed using the same material and the same process.
  • the pixel electrodes 191 included in each light emitting element are electrically insulated from each other (also referred to as electrically separated).
  • the pixel electrode 181 included in the light receiving element 46 is electrically insulated from the pixel electrode 191 included in each light emitting element.
  • the common electrode 115 is commonly used by the light receiving element 46, the light emitting element 47B, the light emitting element 47G, and the light emitting element 47R.
  • the pair of electrodes of the light receiving element 46, the light emitting element 47B, the light emitting element 47G, and the light emitting element 47R can have the same material, the same film thickness, and the like. Accordingly, the manufacturing cost of the display device can be reduced and the manufacturing process can be simplified.
  • the light emitting layer 193B includes not only the light emitting element 47B that emits blue light but also the light emitting element 47R that emits red light, the light emitting element 47G that emits green light, and The light receiving element 46 is also provided.
  • the light emitting layer 193B functions as a carrier transport layer (electron transport layer in the present embodiment).
  • the display device can be easily manufactured.
  • the light emitting layer 193B is provided also in the light emitting element and the light receiving element which emit other colors as compared with the case where it is provided only in the light emitting element 47B, the influence of the pattern shift of the light emitting layer 193B can be reduced, and the display device. It is possible to improve the yield in manufacturing the.
  • the light-emitting layer 193B is formed in a film formation chamber different from the buffer layer 192B and the buffer layer 194B, a separate mask is required for forming the light-emitting layer 193B.
  • the number of masks required for film formation can be reduced, The manufacturing cost can be reduced.
  • the alignment between the substrate and the mask since high accuracy is required for the alignment between the substrate and the mask, it may take time to dispose the mask, or the alignment deviation may affect the display quality of the manufactured display device.
  • the configuration of the display device shown in FIG. 2 will be specifically described.
  • the light emitting element 47B has a buffer layer 192B, a light emitting layer 193B, and a buffer layer 194B in this order on the pixel electrode 191.
  • the light emitting layer 193B includes a light emitting material that emits blue light.
  • the light emitting element 47B has a function of emitting blue light.
  • the light emitting element 47G includes a buffer layer 192G, a light emitting layer 193G, a light emitting layer 193B, and a buffer layer 194G on the pixel electrode 191 in this order.
  • the light emitting layer 193G includes a light emitting material that emits green light.
  • the light emitting element 47G has a function of emitting green light.
  • the light emitting element 47R includes a buffer layer 192R, a light emitting layer 193R, a light emitting layer 193B, and a buffer layer 194R on the pixel electrode 191 in this order.
  • the light emitting layer 193R includes a light emitting material that emits red light.
  • the light emitting element 47R has a function of emitting red light.
  • the light receiving element 46 has a buffer layer 182, an active layer 183, a light emitting layer 193B, and a buffer layer 184 on the pixel electrode 181, in this order.
  • the active layer 183 has an organic compound.
  • the light receiving element 46 has a function of detecting one or both of visible light and infrared light.
  • the 194G, the buffer layer 194B, and the common electrode 115 may each have a single-layer structure or a laminated structure.
  • the light emitting layer 193B is provided in common to the light emitting element 47B, the light emitting element 47G, the light emitting element 47R, and the light receiving element 46.
  • the light emitting layer 193G, the light emitting layer 193R, and the active layer 183 are layers separately formed for each element.
  • the light emitting layer 193G is provided in the light emitting element 47G, and the light emitting layer 193R is provided in the light emitting element 47R.
  • the layer 183 is provided on the light receiving element 46.
  • the buffer layer 182 can have a hole-transporting layer.
  • the buffer layers 192B, 192G, and 192R can each include one or both of a hole injection layer and a hole transport layer.
  • the buffer layer 184 can have an electron transport layer.
  • the buffer layers 184, 194B, 194G, and 194R can each include one or both of an electron injection layer and an electron transport layer.
  • the hole injection layer is a layer for injecting holes from the anode into the light emitting element, and is a layer containing a material having a high hole injection property.
  • a material having a high hole injecting property an aromatic amine compound or a composite material containing a hole transporting material and an acceptor material (electron accepting material) can be used.
  • the hole transport layer is a layer that transports holes injected from the anode to the light emitting layer by the hole injection layer.
  • the hole transport layer is a layer that transports holes generated based on the light incident on the active layer to the anode.
  • the hole transport layer is a layer containing a hole transport material.
  • the hole-transporting material a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or higher is preferable. Note that substances other than these substances can be used as long as they have a property of transporting more holes than electrons.
  • a material having a high hole-transporting property such as a ⁇ -electron excess type heteroaromatic compound (for example, a carbazole derivative, a thiophene derivative, a furan derivative) or an aromatic amine (a compound having an aromatic amine skeleton) Is preferred.
  • a ⁇ -electron excess type heteroaromatic compound for example, a carbazole derivative, a thiophene derivative, a furan derivative
  • an aromatic amine a compound having an aromatic amine skeleton
  • the electron transport layer is a layer that transports electrons injected from the cathode to the light emitting layer by the electron injection layer.
  • the electron transport layer is a layer that transports electrons generated based on the light incident on the active layer to the cathode.
  • the electron transport layer is a layer containing an electron transport material.
  • the electron-transporting material a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or higher is preferable. Note that any substance other than these substances can be used as long as it has a property of transporting more electrons than holes.
  • the electron transporting material examples include a metal complex having a quinoline skeleton, a metal complex having a benzoquinoline skeleton, a metal complex having an oxazole skeleton, a metal complex having a thiazole skeleton, an oxadiazole derivative, a triazole derivative, an imidazole derivative, ⁇ -electron deficiency including oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other nitrogen-containing heteroaromatic compounds
  • a material having a high electron-transporting property such as a type heteroaromatic compound can be used.
  • the electron injection layer is a layer for injecting electrons from the cathode into the light emitting element, and is a layer containing a material having a high electron injection property.
  • a material having a high electron injecting property an alkali metal, an alkaline earth metal, or a compound thereof can be used.
  • a material having a high electron-injection property a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used.
  • a micro optical resonator (microcavity) structure is applied to the light emitting element included in the display device of this embodiment. Therefore, it is preferable that one of the pair of electrodes of the light-emitting element has an electrode having a property of transmitting and reflecting visible light (a semi-transmissive/semi-reflective electrode), and the other has an electrode having a property of reflecting visible light ( It is preferable to have a reflective electrode). Since the light emitting element has a microcavity structure, the light emitted from the light emitting layer can resonate between both electrodes, and the light emitted from the light emitting element can be strengthened.
  • the semi-transmissive/semi-reflective electrode can have a laminated structure of a reflective electrode and an electrode (also referred to as a transparent electrode) having a property of transmitting visible light.
  • the reflective electrode which functions as a part of the semi-transmissive/semi-reflective electrode, may be referred to as a pixel electrode or a common electrode
  • the transparent electrode may be referred to as an optical adjustment layer. It can be said that the layer) also has a function as a pixel electrode or a common electrode.
  • the light transmittance of the transparent electrode is 40% or more.
  • an electrode having a transmittance of visible light (light having a wavelength of 400 nm or more and less than 750 nm) of 40% or more.
  • the visible light reflectance of the semi-transmissive/semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less.
  • the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less. Further, the resistivity of these electrodes is preferably 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • the transmittance and reflectance of these electrodes for near-infrared light are also within the above numerical range. ..
  • the buffer layers 182, 192B, 192G, 192R may each have a function as an optical adjustment layer. Specifically, in the light emitting element 47B, it is preferable to adjust the film thickness of the buffer layer 192B so that the optical distance between the pair of electrodes is an optical distance that enhances blue light. Similarly, in the light emitting element 47G, it is preferable to adjust the film thickness of the buffer layer 192G so that the optical distance between the pair of electrodes is an optical distance that enhances green light. Then, in the light emitting element 47R, it is preferable to adjust the film thickness of the buffer layer 192R such that the optical distance between the pair of electrodes is the optical distance that enhances the red light.
  • the optical distance between the pair of electrodes means the optical distance between the pair of reflective electrodes.
  • the configuration of the display device shown in FIG. 3A will be specifically described.
  • the display device illustrated in FIG. 3A includes a common layer 112 and a common layer 114 in addition to the structure of the display device illustrated in FIG.
  • the layers forming the light-emitting element and the light-receiving element have a common structure because the number of manufacturing steps of the display device can be reduced.
  • the light emitting element 47B illustrated in FIG. 3A includes the common layer 112 between the pixel electrode 191 and the buffer layer 192B, and the common layer 114 between the buffer layer 194B and the common electrode 115.
  • the light emitting element 47G illustrated in FIG. 3A includes the common layer 112 between the pixel electrode 191 and the buffer layer 192G, and the common layer 114 between the buffer layer 194G and the common electrode 115.
  • the light-emitting element 47R illustrated in FIG. 3A includes the common layer 112 between the pixel electrode 191 and the buffer layer 192R and the common layer 114 between the buffer layer 194R and the common electrode 115.
  • the light receiving element 46 shown in FIG. 3A has the common layer 112 between the pixel electrode 181 and the buffer layer 182, and the common layer 114 between the buffer layer 184 and the common electrode 115.
  • the common layer 112 and the common layer 114 may each have a single-layer structure or a laminated structure.
  • the common layer 112 can include, for example, one or both of a hole injection layer and a hole transport layer.
  • the common layer 114 can include, for example, one or both of an electron injection layer and an electron transport layer.
  • the common layer 112 and the common layer 114 may have different functions in the light emitting element and the light receiving element. For example, when the common layer 112 has a hole injection layer, the hole injection layer functions as a hole injection layer in the light emitting element and functions as a hole transport layer in the light receiving element. Similarly, when the common layer 114 has an electron injection layer, the electron injection layer functions as an electron injection layer in the light emitting element and functions as an electron transport layer in the light receiving element.
  • the common layer 112 has a hole injection layer
  • the buffer layers 182, 192B, 192G, and 192R each have a hole transport layer
  • the buffer layers 184, 194B, and 194G. , 194R each have an electron transport layer
  • the common layer 114 has an electron injection layer.
  • the common layer 112 and the common layer 114 are located on the pixel electrode 181 and the pixel electrode 191, respectively.
  • the common layer 112 and the common layer 114 are layers commonly used by the light receiving element 46 and the light emitting element 47, respectively.
  • the configuration of the display device shown in FIG. 3B will be specifically described.
  • the display device shown in FIG. 3B differs from the display device shown in FIG. 3A in that it does not have the buffer layers 182, 192, 184 and 194 but has the common layers 112 and 114.
  • the light emitting element 47B has the common layer 112 between the pixel electrode 191 and the light emitting layer 193B, and has the common layer 114 between the light emitting layer 193B and the common electrode 115.
  • the light emitting element 47G has the common layer 112 between the pixel electrode 191 and the light emitting layer 193G, and has the common layer 114 between the light emitting layer 193B and the common electrode 115.
  • the light emitting element 47R has the common layer 112 between the pixel electrode 191 and the light emitting layer 193R, and has the common layer 114 between the light emitting layer 193B and the common electrode 115.
  • the light receiving element 46 has the common layer 112 between the pixel electrode 181 and the active layer 183, and has the common layer 114 between the light emitting layer 193B and the common electrode 115.
  • the common layer 112 includes a hole injection layer and a hole transport layer and the common layer 114 includes an electron transport layer and an electron injection layer can be given.
  • the light receiving element 46 and the light emitting element 47 are common except that the active layer 183 of the light receiving element 46, the light emitting layer 193R of the light emitting element 47R, and the light emitting layer 193G of the light emitting element 47G are separately formed.
  • An example of the configuration will be shown.
  • the light emitting element 47B does not have a layer which is formed separately from other elements, the number of masks can be reduced. Accordingly, the manufacturing cost of the display device can be reduced.
  • the display devices shown in FIGS. 4A, 4B, 5A, and 5B emit light of blue (B) and light of green (G) over the substrate 151 through the layer 55 having a transistor.
  • the light emitting element 47G that emits light, the light emitting element 47R that emits red (R) light, the light receiving element 46, the coloring layer CFG, and the coloring layer CFR are included.
  • the display device shown in FIG. 5B further includes a coloring layer CFB.
  • the light emitting element 47B, the light emitting element 47G, and the light emitting element 47R have a pixel electrode 191 and a common electrode 115, respectively.
  • the light receiving element 46 has a pixel electrode 181 and a common electrode 115.
  • the common electrode 115 is commonly used for the light receiving element 46 and the light emitting element 47 that emits light of each color.
  • the light emitting element 47R and the light emitting element 47G have a common light emitting layer.
  • the light emitting element 47R and the light emitting element 47G include a light emitting layer 193R that emits red light and a light emitting layer 193G that emits green light.
  • the light emitting element 47R and the light emitting element 47G have a light emitting layer 193Y that emits yellow light. Then, the light emitted from the light emitting element 47R is extracted from the display device as red light through the colored layer CFR. In addition, the light emitted from the light emitting element 47G is extracted from the display device as green light through the colored layer CFG.
  • the number of film forming steps and the number of masks can be reduced as compared with a configuration in which the light emitting element 47R and the light emitting element 47G have layers that are formed separately from each other. You can Therefore, the manufacturing process and manufacturing cost of the display device can be reduced.
  • the light emitting element 47R and the light emitting element 47G have a common configuration, it is possible to reduce the margin for positional deviation compared to the configuration in which the light emitting element 47R and the light emitting element 47G have layers that are formed separately from each other.
  • the aperture ratio of the pixel can be increased and the light extraction efficiency of the display device can be increased.
  • the higher the aperture ratio of the pixel the lower the brightness of the sub-pixel required to obtain a certain brightness in the display device.
  • the life of the light emitting element can be extended.
  • the display device can express high brightness. Further, high definition of the display device is possible.
  • the light emitting element 47R, the light emitting element 47G, and the light emitting element 47B have a common light emitting layer.
  • Each light emitting element has a light emitting layer 193R that emits red light, a light emitting layer 193G that emits green light, and a light emitting layer 193B that emits blue light.
  • the light emitted from the light emitting element 47R is extracted from the display device as red light through the colored layer CFR.
  • the light emitted from the light emitting element 47G is extracted from the display device as green light through the colored layer CFG.
  • the light emitted from the light emitting element 47B is extracted from the display device as blue light through the colored layer CFB.
  • the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have a common structure, so that the number of film formation steps is larger than that in the structure in which the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have different layers. Also, the number of masks can be reduced. Therefore, the manufacturing process and manufacturing cost of the display device can be reduced.
  • the light emitting element 47R, the light emitting element 47G, and the light emitting element 47B have a common configuration, so that the light emitting element 47R, the light emitting element 47G, and the light emitting element 47B have different layers from each other as compared with a configuration in which layers are separately formed. You can narrow the margin. As a result, the aperture ratio of the pixel can be increased and the light extraction efficiency of the display device can be increased. The higher the aperture ratio of the pixel, the lower the brightness of the sub-pixel required to obtain a certain brightness in the display device. As a result, the life of the light emitting element can be extended. In addition, the display device can express high brightness. Further, high definition of the display device is possible.
  • the configuration of the display device shown in FIG. 4A will be specifically described.
  • the light emitting element 47B has the common layer 112, the buffer layer 192B, the light emitting layer 193B, and the common layer 114 on the pixel electrode 191 in this order.
  • the light emitting layer 193B includes a light emitting material that emits blue light.
  • the light emitting element 47B has a function of emitting blue light.
  • the light emitting element 47G and the light emitting element 47R each have a common layer 112, a buffer layer 192, a light emitting layer 193R, a light emitting layer 193G, and a common layer 114 on the pixel electrode 191 in this order.
  • the light emitting layer 193R includes a light emitting material that emits red light.
  • the light emitting layer 193G includes a light emitting material that emits green light.
  • the light emitted from the light emitting element 47G is extracted as green light through the colored layer CFG.
  • the light emitted by the light emitting element 47R is extracted as red light through the colored layer CFR.
  • the light receiving element 46 has the common layer 112, the buffer layer 182, the active layer 183, and the common layer 114 on the pixel electrode 181 in this order.
  • the active layer 183 has an organic compound.
  • the light receiving element 46 has a function of detecting one or both of visible light and infrared light.
  • the light emitting layer 193R and the light emitting layer 193G are provided commonly to the light emitting element 47G and the light emitting element 47R.
  • the light emitting layer 193B and the active layer 183 are layers formed for each element.
  • the light emitting layer 193B is provided in the light emitting element 47B and the active layer 183 is provided in the light receiving element 46.
  • the common layer 112 has a hole injection layer
  • the buffer layers 182, 192B, and 192 each have a hole transport layer
  • the common layer 114 has an electron injection layer and an electron.
  • a configuration having one or both of the transport layers is included.
  • FIG. 4A shows an example in which the light emitting element 47G and the light emitting element 47R have the same configuration
  • the light emitting element 47G and the light emitting element 47R may have optical adjustment layers having different thicknesses.
  • the pixel electrode 191 has a laminated structure of a reflective electrode and a transparent electrode on the reflective electrode, and the thickness of the transparent electrode is different between the light emitting element 47G and the light emitting element 47R to perform optical adjustment.
  • the light emitting element 47G may be provided with a transparent electrode so that the optical distance between the pair of electrodes is an optical distance that enhances green light, and the light emitting element 47R is provided between the pair of electrodes.
  • a transparent electrode may be provided so that the optical distance is an optical distance that enhances red light.
  • the light emitting element 47B is preferably optically adjusted by using the buffer layer 192B so that the optical distance between the pair of electrodes is an optical distance that enhances blue light.
  • the light receiving element 46 is preferably optically adjusted using the buffer layer 182 so that the optical distance between the pair of electrodes is an optical distance that enhances the light of the wavelength to be detected.
  • each of the light emitting element 47B and the light receiving element 46 may be provided with an optical adjustment layer (transparent electrode).
  • the light emitting layer 193B is provided not only on the light emitting element 47B that emits blue light but also on the light emitting elements 47R and 47G that emits light of other colors and the light receiving element 46. 4A and FIG. 5A.
  • the light emitting layer 193B functions as a carrier transport layer (electron transport layer in the present embodiment).
  • the configuration of the display device shown in FIG. 5A will be specifically described.
  • the light emitting element 47R and the light emitting element 47G do not have the light emitting layer 193R that emits red light and the light emitting layer 193G that emits green light, but have the light emitting layer 193Y that emits yellow light. This is different from the display device shown in FIG. 4A.
  • the number of manufacturing steps of the display device can be reduced.
  • the light emitting layer 193B is provided not only in the light emitting element 47B that emits blue light but also in the light emitting elements 47R and 47G that emits light of other colors and the light receiving element 46. can do.
  • the configuration of the display device shown in FIG. 5B will be specifically described.
  • the display device illustrated in FIG. 5B has the same structure as the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B, and the light emitted from the light-emitting element 47B is extracted through the coloring layer CFB in FIG. 4A. Different from the display device shown.
  • the light emitting element 47R, the light emitting element 47G, and the light emitting element 47B have the common layer 112, the buffer layer 192, the light emitting layer 193R, the light emitting layer 193G, the light emitting layer 193B, and the common layer 114, respectively, in this order on the pixel electrode 191.
  • the light emitting layer 193R includes a light emitting material that emits red light.
  • the light emitting layer 193G includes a light emitting material that emits green light.
  • the light emitting layer 193B includes a light emitting material that emits blue light.
  • the light emitted by the light emitting element 47R is extracted as red light through the colored layer CFR.
  • the light emitted from the light emitting element 47G is extracted as green light through the colored layer CFG.
  • the light emitted by the light emitting element 47B is extracted as blue light through the colored layer CFB.
  • the light emitting element 47 may have a single structure having one light emitting unit between the pixel electrode 191 and the common electrode 115, or may have a tandem structure having a plurality of light emitting units.
  • the light receiving element 46 has the common layer 112, the buffer layer 182, the active layer 183, and the common layer 114 on the pixel electrode 181 in this order.
  • the active layer 183 has an organic compound.
  • the light receiving element 46 has a function of detecting one or both of visible light and infrared light.
  • the light emitting layer 193R, the light emitting layer 193G, and the light emitting layer 193B are provided commonly to the light emitting element 47R, the light emitting element 47G, and the light emitting element 47B.
  • the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have a common structure, so that the number of film formation steps is larger than that in the structure in which the light-emitting element 47R, the light-emitting element 47G, and the light-emitting element 47B have different layers. Also, the number of masks can be reduced. Therefore, the manufacturing process and manufacturing cost of the display device can be reduced.
  • the light emitting element 47R, the light emitting element 47G, the light emitting element 47B, and the light receiving element 46 may have optical adjustment layers having different thicknesses.
  • the display devices shown in FIGS. 6A, 6B, 7A, and 7B emit light of blue (B) and green (G) light over the substrate 151 through the layer 55 having a transistor. It has a light emitting element 47G that emits light, a light emitting element 47R that emits red (R) light, and a light receiving element 46.
  • the light emitting element 47B, the light emitting element 47G, and the light emitting element 47R have a pixel electrode 191 and a common electrode 115, respectively.
  • the light receiving element 46 has a pixel electrode 181 and a common electrode 115.
  • the common electrode 115 is commonly used for the light receiving element 46 and the light emitting element 47 that emits light of each color.
  • the light receiving element 46 and the light emitting element 47R have the common light emitting layer 193R and the active layer 183.
  • the light receiving element 46 and the light emitting element 47G have a common light emitting layer 193G and active layer 183.
  • the light receiving element 46 can be configured in common with a light emitting element that emits light having a longer wavelength than the light to be detected.
  • the light receiving element 46 configured to detect blue light can have the same configuration as one or both of the light emitting element 47R and the light emitting element 47G.
  • the light receiving element 46 configured to detect green light can have the same configuration as the light emitting element 47R.
  • the light receiving element 46 and the light emitting element 47R or the light emitting element 47G have a common configuration
  • the light receiving element 46 and the light emitting element 47R or the light emitting element 47G have a configuration different from that of the configuration having a layer to be formed separately from each other.
  • the number of film processes and the number of masks can be reduced. Therefore, the manufacturing process and manufacturing cost of the display device can be reduced.
  • the light receiving element 46 and the light emitting element 47R or the light emitting element 47G have a common configuration, so that the light receiving element 46 and the light emitting element 47R or the light emitting element 47G have a layer that is different from each other.
  • the margin for misalignment can be narrowed.
  • the aperture ratio of the pixel can be increased and the light extraction efficiency of the display device can be increased.
  • the life of the light emitting element can be extended.
  • the display device can express high brightness. Further, high definition of the display device is possible.
  • the configuration of the display device shown in FIG. 6A will be specifically described.
  • the light emitting element 47B has the common layer 112, the buffer layer 192B, the light emitting layer 193B, and the common layer 114 on the pixel electrode 191 in this order.
  • the light emitting layer 193B includes a light emitting material that emits blue light.
  • the light emitting element 47B has a function of emitting blue light.
  • the light emitting element 47G includes the common layer 112, the buffer layer 192G, the light emitting layer 193G, and the common layer 114 on the pixel electrode 191 in this order.
  • the light emitting layer 193G includes a light emitting material that emits green light.
  • the light emitting element 47G has a function of emitting green light.
  • the light emitting element 47R and the light receiving element 46 respectively have the common layer 112, the buffer layer 182, the light emitting layer 193R, the active layer 183, and the common layer 114 on the pixel electrode in this order.
  • the light emitting layer 193R includes a light emitting material that emits red light.
  • the active layer 183 includes an organic compound that absorbs light having a shorter wavelength than red light (for example, one or both of green light and blue light).
  • the active layer 183 preferably has an organic compound that hardly absorbs red light and absorbs light having a shorter wavelength than red light. As a result, red light is efficiently extracted from the light emitting element 47R, and the light receiving element 46 can detect light having a shorter wavelength than red light with high accuracy.
  • FIG. 6A shows an example in which the light emitting element 47R and the light receiving element 46 have the same configuration
  • the light emitting element 47R and the light receiving element 46 may have optical adjustment layers having different thicknesses.
  • the pixel electrode 191 and the pixel electrode 181 have a laminated structure of a reflective electrode and a transparent electrode on the reflective electrode, and the thickness of the transparent electrode is different between the light emitting element 47R and the light receiving element 46. It is preferable to make adjustments.
  • the light emitting element 47R is preferably provided with a transparent electrode so that the optical distance between the pair of electrodes is an optical distance that enhances red light
  • the light receiving element 46 is provided with an optical distance between the pair of electrodes.
  • the transparent electrode is provided so that the distance is an optical distance that enhances the light of the wavelength to be detected. Accordingly, the light emitting element 47R can efficiently extract red light, and the light receiving element 46 can detect the light with high accuracy. Further, the light emitting element 47G is preferably optically adjusted using the buffer layer 192G so that the optical distance between the pair of electrodes is an optical distance that enhances green light. Similarly, the light emitting element 47B is preferably optically adjusted using the buffer layer 192B so that the optical distance between the pair of electrodes is an optical distance that enhances blue light. Alternatively, an optical adjustment layer (transparent electrode) may be provided in each of the light emitting element 47G and the light emitting element 47B.
  • the common layer 112 has a hole injection layer
  • the buffer layers 182, 192B, and 192G each have a hole transport layer
  • the common layer 114 has one or both of an electron injection layer and an electron transport layer. It can be configured.
  • the configuration of the display device shown in FIG. 6B will be specifically described.
  • the light emitting element 47B shown in FIG. 6B has the same configuration as that of FIG. 6A.
  • the light emitting element 47R includes the common layer 112, the buffer layer 192R, the light emitting layer 193R, and the common layer 114 on the pixel electrode 191 in this order.
  • the light emitting layer 193R includes a light emitting material that emits red light.
  • the light emitting element 47R has a function of emitting red light.
  • the light emitting element 47G and the light receiving element 46 respectively have the common layer 112, the buffer layer 182, the light emitting layer 193G, the active layer 183, and the common layer 114 on the pixel electrode in this order.
  • the light emitting layer 193G includes a light emitting material that emits green light.
  • the active layer 183 has an organic compound that absorbs light having a shorter wavelength than green light (for example, blue light).
  • the active layer 183 preferably contains an organic compound that hardly absorbs light from red to green and absorbs light having a shorter wavelength than that of green light. As a result, green light is efficiently extracted from the light emitting element 47G, and the light receiving element 46 can detect light having a shorter wavelength than green light with high accuracy.
  • the light emitting element 47G and the light receiving element 46 may have different pixel electrodes or buffer layers. Specifically, the light emitting element 47G may be optically adjusted so that the optical distance between the pair of electrodes is an optical distance that enhances the green light, and the light receiving element 46 is the optical distance between the pair of electrodes. May be optically adjusted to have an optical distance that enhances the light of the wavelength to be detected. Accordingly, the light emitting element 47G can efficiently extract green light, and the light receiving element 46 can detect the light with high accuracy.
  • an organic compound is used for the active layer 183 of the light receiving element 46.
  • the light receiving element 46 can be manufactured by only changing at least a part of the configuration between the pair of electrodes in the light emitting element 47. Therefore, the light receiving element 46 can be built in the display portion of the display device. Further, the light receiving element can be configured in common with a light emitting element that emits red or green light. As described above, by forming at least part of the layers forming the light-emitting element and the light-receiving element to have a common structure, manufacturing steps of the display device can be reduced.
  • the configuration of the display device shown in FIG. 7A will be specifically described.
  • the display device shown in FIG. 7A is different from the display device shown in FIG. 6A in that the light emitting element 47R and the light receiving element 46 do not have the buffer layer 182, and the light emitting layer 193R is located on the active layer 183.
  • the stacking order of the active layer 183 and the light emitting layer 193R is not limited.
  • the light emitting layer 193R may be provided on the active layer 183, and the active layer 183 may be provided on the light emitting layer 193R.
  • a hole transport layer can be used as the buffer layers 192B and 192G.
  • the light emitting element 47R and the light receiving element 46 may not have the hole transport layer.
  • layers provided in any one of the light emitting elements 47R, 47G, 47B and the light receiving element 46 and not provided in other elements for example, a hole injection layer, a hole transport layer). , Electron transport layer, electron injection layer, hole blocking layer, electron blocking layer, etc.).
  • the configuration of the display device shown in FIG. 7B will be specifically described.
  • the display device shown in FIG. 7B is different from the display device shown in FIG. 6A in that a buffer layer 182 is provided between the active layer 183 and the light emitting layer 193R.
  • the light emitting layer 193R and the active layer 183 may be in contact with each other, or a layer may be sandwiched therebetween.
  • the buffer layer can also be used to adjust the optical path length (cavity length) of the microcavity structure. Therefore, high light emission efficiency can be obtained from the light emitting element 47R having the buffer layer between the active layer 183 and the light emitting layer 193R.
  • the common layer 112 has a hole injection layer
  • the buffer layers 182, 192B, and 192G each have a hole transport layer
  • the common layer 114 has one or both of an electron injection layer and an electron transport layer. It can be configured.
  • the common layer 112 may further include a hole transport layer. That is, the light emitting element and the light receiving element may each include both the hole transport layer included in the common layer 112 and the hole transport layer included in the buffer layer.
  • FIG. 8A shows a sectional view of the display device 10A.
  • the configuration of FIG. 3B described in the configuration example 1 is applied to the display device 10A.
  • the description of Configuration Example 1 can be referred to.
  • the display device 10A includes a light receiving element 110, a light emitting element 190B, and a light emitting element 190G.
  • the light receiving element 110 has a function of detecting the light 22.
  • the wavelength of the light 22 detected by the light receiving element 110 is not particularly limited, and for example, one or both of visible light and infrared light can be detected.
  • the light emitting element 190B has a function of emitting blue light 21B.
  • the light emitting element 190G has a function of emitting green light 21G.
  • the light emitting element 190B has a pixel electrode 191, a common layer 112, a light emitting layer 193B, a common layer 114, and a common electrode 115.
  • the light emitting element 190G includes a pixel electrode 191, a common layer 112, a light emitting layer 193G, a light emitting layer 193B, a common layer 114, and a common electrode 115.
  • the light receiving element 110 has a pixel electrode 181, a common layer 112, an active layer 183, a light emitting layer 193B, a common layer 114, and a common electrode 115.
  • the pixel electrode 181 and the pixel electrode 191 are located on the insulating layer 214.
  • the pixel electrode 181 and the pixel electrode 191 can be formed using the same material and the same process.
  • the common layer 112 is located on the pixel electrode 181 and the pixel electrode 191.
  • the common layer 112 is a layer commonly used for the light receiving element 110, the light emitting element 190B, and the light emitting element 190G.
  • the active layer 183 overlaps with the pixel electrode 181 via the common layer 112.
  • the light emitting layer 193G overlaps with the pixel electrode 191 via the common layer 112.
  • the light emitting layer 193B overlaps with the pixel electrode 181 via the common layer 112 and the active layer 183.
  • the light emitting layer 193B overlaps with the pixel electrode 191 included in the light emitting element 190G via the common layer 112 and the light emitting layer 193G.
  • the light emitting layer 193B overlaps with the pixel electrode 191 included in the light emitting element 190B with the common layer 112 interposed therebetween.
  • the common layer 114 is located on the light emitting layer 193B.
  • the common layer 114 is a layer commonly used for the light receiving element 110, the light emitting element 190B, and the light emitting element 190G.
  • As the common layer 114 for example, one or both of an electron injection layer and an electron transport layer can be formed.
  • the common electrode 115 has a portion overlapping with the pixel electrode 181 with the common layer 112, the active layer 183, the light emitting layer 193B, and the common layer 114 interposed therebetween.
  • the common electrode 115 has a portion overlapping with the pixel electrode 191 included in the light emitting element 190G with the common layer 112, the light emitting layer 193G, the light emitting layer 193B, and the common layer 114 interposed therebetween.
  • the common electrode 115 has a portion overlapping with the pixel electrode 191 included in the light emitting element 190B with the common layer 112, the light emitting layer 193B, and the common layer 114 interposed therebetween.
  • the common electrode 115 is a layer commonly used by the light receiving element 110, the light emitting element 190B, and the light emitting element 190G.
  • an organic compound is used for active layer 183 of light receiving element 110.
  • the light receiving element 110 can be manufactured by only changing at least a part of the configuration between the pair of electrodes in the light emitting element 190 (EL element). That is, the light emitting element 190 and the light receiving element 110 can be formed on the same substrate. Further, the light receiving element 110 can be formed in parallel with the formation of the light emitting element 190. Therefore, the light receiving element 110 can be built in the display portion of the display device without significantly increasing the number of manufacturing steps.
  • the light receiving element 110 and the light emitting element 190G have a common configuration except that the active layer 183 of the light receiving element 110 and the light emitting layer 193G of the light emitting element 190G are formed separately.
  • the configurations of the light receiving element 110 and the light emitting element 190G are not limited to this.
  • the light-receiving element 110 and the light-emitting element 190G may have layers separately formed in addition to the active layer 183 and the light-emitting layer 193G.
  • the light receiving element 110 and the light emitting element 190G preferably have one or more layers that are commonly used (common layer). Accordingly, the light receiving element 110 can be incorporated in the display device without significantly increasing the number of manufacturing steps.
  • the light emitting layer 193B that emits blue light is provided not only on the light emitting element 190B that emits blue light but also on the light emitting element 190G and the light receiving element 110.
  • the light emitting layer 193B functions as a carrier transport layer.
  • the display device 10A includes a light receiving element 110, a light emitting element 190B, a light emitting element 190G, a transistor 41, a transistor 42, and the like between a pair of substrates (the substrate 151 and the substrate 152).
  • the common layer 112, the active layer 183, and the common layer 114, which are located between the pixel electrode 181 and the common electrode 115, respectively, can be referred to as an organic layer (layer containing an organic compound).
  • the pixel electrode 181 preferably has a function of reflecting visible light.
  • An end portion of the pixel electrode 181 is covered with a partition wall 216.
  • the common electrode 115 has a function of transmitting visible light.
  • the light receiving element 110 has a function of detecting light.
  • the light receiving element 110 is a photoelectric conversion element that receives the light 22 incident from the outside of the display device 10A and converts the light 22 into an electric signal.
  • the light 22 can also be referred to as light obtained by reflecting the light emitted from the light emitting element 190 by the object. Further, the light 22 may be incident on the light receiving element 110 via a lens described later.
  • the light-blocking layer BM has openings at positions where it overlaps with the light-receiving element 110 and light-emitting element 190.
  • the light receiving element 110 detects the light reflected by the target light emitted from the light emitting element 190.
  • the light emitted from the light emitting element 190 may be reflected in the display device 10A and enter the light receiving element 110 without passing through the object.
  • the light shielding layer BM can suppress such an influence of stray light.
  • the light shielding layer BM is not provided, the light 23a emitted by the light emitting element 190 may be reflected by the substrate 152 and the reflected light 23b may enter the light receiving element 110.
  • the light shielding layer BM it is possible to suppress the reflected light 23b from entering the light receiving element 110. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be increased.
  • the common layer 112, the light emitting layer 193, and the common layer 114 which are located between the pixel electrode 191 and the common electrode 115, respectively, can be referred to as EL layers.
  • the pixel electrode 191 preferably has a function of reflecting visible light.
  • the end of the pixel electrode 191 is covered with a partition 216.
  • the pixel electrode 181 and the pixel electrode 191 are electrically insulated from each other (also referred to as electrically separated) by the partition wall 216.
  • the common electrode 115 has a function of transmitting visible light.
  • the light emitting element 190B is an electroluminescent element that emits blue light 21B toward the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115.
  • the light emitting element 190G is an electroluminescent element that emits green light 21G to the substrate 152 side by applying a voltage between the pixel electrode 191 and the common electrode 115.
  • the pixel electrode 181 is electrically connected to a source or a drain included in the transistor 41 through an opening provided in the insulating layer 214.
  • the end portion of the pixel electrode 181 is covered with a partition wall 216.
  • the pixel electrode 191 is electrically connected to a source or a drain included in the transistor 42 through an opening provided in the insulating layer 214.
  • the end of the pixel electrode 191 is covered with a partition 216.
  • the transistor 42 has a function of controlling driving of the light emitting element 190.
  • the transistor 41 and the transistor 42 are in contact with each other on the same layer (the substrate 151 in FIG. 8A).
  • At least part of a circuit electrically connected to the light receiving element 110 is preferably formed using the same material and the same step as the circuit electrically connected to the light emitting element 190. Accordingly, the thickness of the display device can be reduced and the manufacturing process can be simplified as compared with the case where two circuits are formed separately.
  • Each of the light receiving element 110 and the light emitting element 190 is preferably covered with a protective layer 195.
  • the protective layer 195 is provided on and in contact with the common electrode 115.
  • impurities such as water can be prevented from entering the light receiving element 110 and the light emitting element 190, and the reliability of the light receiving element 110 and the light emitting element 190 can be improved.
  • the protective layer 195 and the substrate 152 are attached to each other by the adhesive layer 142.
  • FIG. 8B shows a cross-sectional view of the display device 10B.
  • the configuration described in the configuration example 2 is applied to the display device 10B. Note that in the following description of the display device, the description of the same configuration as the display device described above may be omitted.
  • the display device 10B includes a light receiving element 110, a light emitting element 190R, and a light emitting element 190G.
  • the light receiving element 110 has a function of detecting the light 22.
  • the light emitting element 190R has a function of emitting red light 21R.
  • the light emitting element 190G has a function of emitting green light 21G.
  • the light emitting element 190R and the light emitting element 190G have the same configuration.
  • the light emitting element 190R and the light emitting element 190G include a pixel electrode 191, a common layer 112, a light emitting layer 193, a common layer 114, and a common electrode 115.
  • the light emitting layer 193 may have a single layer structure or a stacked structure.
  • a structure including the light emitting layer 193Y can be applied.
  • a red coloring layer CFR and a green coloring layer CFG are provided on the substrate 151 side of the substrate 152.
  • the light emitted from the light emitting element 190R is extracted from the display device 10B as red light through the colored layer CFR.
  • the light emitted from the light emitting element 190G is extracted from the display device 10B as green light through the colored layer CFG.
  • the light receiving element 110 has a pixel electrode 181, a common layer 112, an active layer 183, a common layer 114, and a common electrode 115.
  • the light receiving element 110 and the light emitting elements 190G and 190R have a common configuration except that the active layer 183 of the light receiving element 110 and the light emitting layer 193 of the light emitting elements 190G and 190R are formed separately.
  • the configurations of the light receiving element 110 and the light emitting elements 190G and 190R are not limited to this.
  • the light-receiving element 110 and the light-emitting elements 190G and 190R may include layers that are formed separately from each other in addition to the active layer 183 and the light-emitting layer 193.
  • the light receiving element 110 and the light emitting elements 190G and 190R preferably have at least one layer (common layer) used in common. Accordingly, the light receiving element 110 can be incorporated in the display device without significantly increasing the number of manufacturing steps.
  • FIG. 8C shows a cross-sectional view of the display device 10C.
  • the configuration of FIG. 6A described in the configuration example 3 is applied to the display device 10C.
  • the display device 10C includes a light receiving element 110, a light emitting element 190R, and a light emitting element 190G.
  • the light receiving element 110 has a function of detecting the light 22.
  • the light emitting element 190R has a function of emitting red light 21R.
  • the light emitting element 190G has a function of emitting green light 21G.
  • the light emitting element 190R and the light receiving element 110 have the same configuration. Specifically, the light emitting element 190R and the light receiving element 110 have a pixel electrode, a common layer 112, a light emitting layer 193R, an active layer 183, a common layer 114, and a common electrode 115. Note that in FIG. 8C and the like, the light emitting layer 193R and the active layer 183 are described as one layer, but the light emitting layer 193R and the active layer 183 are separate layers.
  • the light emitting element 190G includes a pixel electrode 191, a common layer 112, a light emitting layer 193G, a common layer 114, and a common electrode 115.
  • the light receiving element 110, the light emitting element 190R, and the light emitting element 190G are common, except that the active layer 183 and the light emitting layer 193R of the light receiving element 110 and the light emitting element 190R and the light emitting layer 193G of the light emitting element 190G are separately formed.
  • An example of the configuration will be shown.
  • the configurations of the light receiving element 110 and the light emitting elements 190G and 190R are not limited to this.
  • FIG. 9A shows a sectional view of the display device 10D.
  • the display device 10D is different from the display device 10A in that the display device 10D does not have the protective layer 195 and has the lens 149.
  • the display device of this embodiment does not need to have a protective layer over the light-receiving element 110 and the light-emitting element 190.
  • the common electrode 115 and the substrate 152 are attached to each other by the adhesive layer 142.
  • the display device of this embodiment may include the lens 149.
  • the lens 149 is provided at a position overlapping the light receiving element 110.
  • the lens 149 is provided in contact with the substrate 152.
  • the lens 149 included in the display device 10D has a convex surface on the substrate 151 side.
  • FIG. 9A shows an example in which the lens 149 is formed first, the light shielding layer BM may be formed first. In FIG. 9A, the end portion of the lens 149 is covered with the light shielding layer BM.
  • the display device 10D has a configuration in which the light 22 is incident on the light receiving element 110 via the lens 149.
  • the lens 149 With the lens 149, it is possible to narrow the image pickup range of the light receiving element 110 and to prevent the adjacent light receiving element 110 from overlapping with the image pickup range as compared with the case where the lens 149 is not provided. This makes it possible to capture a clear image with little blur.
  • the size of the pinhole is larger than that in the case where the lens 149 is not provided (in FIG. 9A, the size of the opening of the light shielding layer BM that overlaps with the light receiving element 110). It can be increased). Therefore, by including the lens 149, the amount of light incident on the light receiving element 110 can be increased.
  • the lens 149 having a convex surface on the substrate 152 side may be provided in contact with the upper surface of the protective layer 195.
  • a lens array may be provided on the display surface side of the substrate 152 (opposite to the surface on the substrate 151 side). The lens included in the lens array is provided at a position overlapping the light receiving element 110.
  • a light blocking layer BM is preferably provided on the surface of the substrate 152 on the substrate 151 side.
  • a lens such as a microlens may be directly formed over a substrate or a light-receiving element, or a separately manufactured lens array such as a microlens array may be formed over a substrate. It may be attached to.
  • FIG. 9B shows a cross-sectional view of the display device 10E.
  • the display device 10E differs from the display device 10B in that the display device 10E does not include the substrate 151 and the substrate 152, but includes the substrate 153, the substrate 154, the adhesive layer 155, and the insulating layer 212.
  • the substrate 153 and the insulating layer 212 are attached to each other with an adhesive layer 155.
  • the substrate 154 and the protective layer 195 are attached to each other with the adhesive layer 142.
  • the display device 10E has a structure in which the insulating layer 212, the transistor 41, the transistor 42, the light-receiving element 110, the light-emitting element 190, and the like which are formed over a manufacturing substrate are transferred to the substrate 153. It is preferable that each of the substrate 153 and the substrate 154 have flexibility. Thereby, the flexibility of the display device 10E can be enhanced. For example, resin is preferably used for each of the substrate 153 and the substrate 154. A film having high optical isotropy may be used for the substrate included in the display device of this embodiment.
  • FIG. 9C shows a sectional view of the display device 10F.
  • the display device 10F is different from the display device 10C in that the display device 10F does not have the partition wall 216 but has the partition wall 217.
  • the partition wall 217 preferably absorbs light emitted from the light emitting element.
  • a black matrix can be formed using a resin material containing a pigment or a dye. Further, by using a brown resist material, the partition wall 217 can be formed using a colored insulating layer.
  • the light emitted from the light emitting element 190 may be reflected by the substrate 152 and the partition wall 217, and the reflected light may enter the light receiving element 110. Further, the light emitted from the light emitting element 190 may pass through the partition wall 217 and be reflected by a transistor, a wiring, or the like, so that reflected light may enter the light receiving element 110. Since the partition wall 217 absorbs the light, it is possible to prevent such reflected light from entering the light receiving element 110. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be increased.
  • the partition 217 preferably absorbs at least the wavelength of light detected by the light receiving element 110.
  • the light receiving element 110 detects the green light 21G emitted by the light emitting element 190G
  • the partition wall 217 has a red color filter, green light can be absorbed, and reflected light can be suppressed from entering the light-receiving element 110.
  • a colored layer that absorbs light may be provided in contact with one or both of the top surface and the side surface of the partition wall that transmits light.
  • the colored layer preferably absorbs the light emitted by the light emitting element.
  • a black matrix can be formed by using a resin material containing a pigment or a dye. Further, by using the brown resist material, the colored layer can be formed by the colored insulating layer.
  • the colored layer preferably absorbs at least the wavelength of light detected by the light receiving element 110.
  • the colored layer preferably absorbs at least green light.
  • the colored layer has a red color filter, green light can be absorbed, and reflected light can be suppressed from entering the light receiving element 110.
  • the colored layer absorbs stray light generated in the display device 10F, the amount of stray light incident on the light receiving element 110 can be reduced. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be increased.
  • the colored layer is provided between the light receiving element 110 and the light emitting element 190. Thereby, stray light that enters the light receiving element 110 from the light emitting element 190 can be suppressed.
  • FIGS. 10 to 14 mainly show a display device to which the configuration of FIG. 3B described in the configuration example 1 is applied.
  • the display device of one embodiment of the present invention includes the configuration example 2 or the configuration example 3. It is also possible to apply the configuration described in.
  • FIG. 10 shows a perspective view of the display device 100A
  • FIG. 11 shows a cross-sectional view of the display device 100A.
  • the display device 100A has a structure in which a substrate 152 and a substrate 151 are attached to each other.
  • the substrate 152 is clearly indicated by a broken line.
  • the display device 100A includes a display portion 162, a circuit 164, wirings 165 and the like.
  • FIG. 10 shows an example in which an IC (integrated circuit) 173 and an FPC 172 are mounted on the display device 100A. Therefore, the configuration illustrated in FIG. 10 can be referred to as a display module including the display device 100A, an IC, and an FPC.
  • a scan line driver circuit can be used.
  • the wiring 165 has a function of supplying a signal and power to the display portion 162 and the circuit 164.
  • the signal and power are input to the wiring 165 from the outside via the FPC 172 or from the IC 173.
  • FIG. 10 shows an example in which the IC 173 is provided on the substrate 151 by a COG (Chip on Glass) method, a COF (Chip on Film) method, or the like.
  • the IC 173 for example, an IC including a scan line driver circuit, a signal line driver circuit, or the like can be applied.
  • the display device 100A and the display module may be configured without an IC. Further, the IC may be mounted on the FPC by the COF method or the like.
  • FIG. 11 illustrates a part of a region including the FPC 172, a part of a region including the circuit 164, a part of a region including the display portion 162, and a region including an end portion of the display device 100A illustrated in FIG. An example of the cross section when each part is cut is shown.
  • a display device 100A illustrated in FIG. 11 includes a transistor 201, a transistor 205, a transistor 206, a transistor 207, a light emitting element 190B, a light emitting element 190G, a light receiving element 110, and the like between a substrate 151 and a substrate 152.
  • the substrate 152 and the insulating layer 214 are adhered to each other via the adhesive layer 142.
  • a solid sealing structure, a hollow sealing structure, or the like can be applied to seal the light emitting element 190 and the light receiving element 110.
  • the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 is filled with an inert gas (nitrogen, argon, or the like), and a hollow sealing structure is applied.
  • the adhesive layer 142 may be provided so as to overlap with the light emitting element 190.
  • the space 143 surrounded by the substrate 152, the adhesive layer 142, and the insulating layer 214 may be filled with a resin different from that of the adhesive layer 142.
  • the light emitting element 190B has a laminated structure in which the pixel electrode 191B, the common layer 112, the light emitting layer 193B, the common layer 114, and the common electrode 115 are laminated in this order from the insulating layer 214 side.
  • the pixel electrode 191B is connected to the conductive layer 222b included in the transistor 206 through an opening provided in the insulating layer 214.
  • the transistor 206 has a function of controlling driving of the light emitting element 190B.
  • the end portion of the pixel electrode 191B is covered with the partition wall 216.
  • the pixel electrode 191B includes a material that reflects visible light
  • the common electrode 115 includes a material that transmits visible light.
  • the light emitting element 190G has a laminated structure in which the pixel electrode 191G, the common layer 112, the light emitting layer 193G, the light emitting layer 193B, the common layer 114, and the common electrode 115 are laminated in this order from the insulating layer 214 side.
  • the pixel electrode 191G is connected to the conductive layer 222b included in the transistor 207 through an opening provided in the insulating layer 214.
  • the transistor 207 has a function of controlling driving of the light emitting element 190G.
  • the end portion of the pixel electrode 191G is covered with the partition wall 216.
  • the pixel electrode 191G includes a material that reflects visible light.
  • the light receiving element 110 has a laminated structure in which the pixel electrode 181, the common layer 112, the active layer 183, the light emitting layer 193B, the common layer 114, and the common electrode 115 are laminated in this order from the insulating layer 214 side.
  • the pixel electrode 181 is electrically connected to the conductive layer 222b included in the transistor 205 through an opening provided in the insulating layer 214.
  • the end portion of the pixel electrode 181 is covered with a partition wall 216.
  • the pixel electrode 181 includes a material that reflects visible light.
  • the light emitted by the light emitting element 190 is emitted to the substrate 152 side.
  • light enters the light receiving element 110 through the substrate 152 and the space 143.
  • the substrate 152 it is preferable to use a material having high transparency to visible light.
  • the pixel electrode 181, the pixel electrode 191B, and the pixel electrode 191G can be manufactured using the same material and the same process.
  • the common layer 112, the common layer 114, and the common electrode 115 are commonly used for the light receiving element 110 and the light emitting element 190 of each color.
  • the light receiving element 110 has a configuration in which an active layer 183 is added to the configuration of the light emitting element 190B. Further, the light receiving element 110 and the light emitting element 190G may have a common configuration except that the configurations of the active layer 183 and the light emitting layer 193G are different. Accordingly, the light receiving element 110 can be incorporated in the display device 100A without significantly increasing the number of manufacturing steps.
  • a light shielding layer BM is provided on the surface of the substrate 152 on the substrate 151 side.
  • the light-blocking layer BM has openings at positions where it overlaps with the light-receiving element 110 and light-emitting element 190.
  • the range in which the light receiving element 110 detects light can be controlled.
  • the light shielding layer BM since the light shielding layer BM is provided, it is possible to prevent light from directly entering the light receiving element 110 from the light emitting element 190 without passing through the object. Therefore, a sensor with less noise and high sensitivity can be realized.
  • the transistor 201, the transistor 205, the transistor 206, and the transistor 207 are all formed over the substrate 151. These transistors can be manufactured using the same material and the same process.
  • An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are provided in this order over the substrate 151.
  • Part of the insulating layer 211 functions as a gate insulating layer of each transistor.
  • Part of the insulating layer 213 functions as a gate insulating layer of each transistor.
  • the insulating layer 215 is provided so as to cover the transistor.
  • the insulating layer 214 is provided so as to cover the transistor and has a function as a planarization layer. Note that the number of gate insulating layers and the number of insulating layers covering the transistor are not limited, and each may be a single layer or two or more layers.
  • a material in which impurities such as water and hydrogen do not easily diffuse for at least one insulating layer that covers the transistor. This allows the insulating layer to function as a barrier layer. With such a structure, diffusion of impurities into the transistor from the outside can be effectively suppressed, and reliability of the display device can be improved.
  • An inorganic insulating film is preferably used as each of the insulating layer 211, the insulating layer 213, and the insulating layer 215.
  • an inorganic insulating film such as a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, or an aluminum nitride film can be used.
  • a hafnium oxide film, a yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like may be used.
  • two or more of the above-mentioned insulating films may be laminated and used.
  • the organic insulating film often has a lower barrier property than the inorganic insulating film. Therefore, the organic insulating film preferably has an opening near the end of the display device 100A. This can prevent impurities from entering from the end portion of the display device 100A through the organic insulating film.
  • the organic insulating film may be formed so that the end portion of the organic insulating film is inside the end portion of the display device 100A so that the organic insulating film is not exposed at the end portion of the display device 100A.
  • An organic insulating film is suitable for the insulating layer 214 which functions as a planarization layer.
  • Materials that can be used for the organic insulating film include acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimide amide resins, siloxane resins, benzocyclobutene resins, phenol resins, and precursors of these resins. ..
  • an opening is formed in the insulating layer 214. Accordingly, even when an organic insulating film is used for the insulating layer 214, impurities can be suppressed from entering the display portion 162 from the outside through the insulating layer 214. Therefore, the reliability of the display device 100A can be improved.
  • the transistor 201, the transistor 205, the transistor 206, and the transistor 207 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, conductive layers 222a and 222b functioning as a source and a drain, a semiconductor layer 231,
  • the insulating layer 213 which functions as a gate insulating layer and the conductive layer 223 which functions as a gate are included.
  • the same hatching pattern is given to a plurality of layers obtained by processing the same conductive film.
  • the insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231.
  • the insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.
  • the structure of the transistor included in the display device of this embodiment is not particularly limited.
  • a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
  • either a top-gate or bottom-gate transistor structure may be used.
  • gates may be provided above and below a semiconductor layer in which a channel is formed.
  • a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistor 201, the transistor 205, the transistor 206, and the transistor 207.
  • the transistor may be driven by connecting two gates and supplying the same signal to them.
  • the threshold voltage of the transistor may be controlled by supplying one of the two gates with a potential for controlling the threshold voltage and the other with a potential for driving.
  • crystallinity of a semiconductor material used for a transistor either an amorphous semiconductor or a crystalline semiconductor (a microcrystalline semiconductor, a polycrystalline semiconductor, a single crystal semiconductor, or a semiconductor partially having a crystalline region). May be used. It is preferable to use a semiconductor having crystallinity because deterioration of transistor characteristics can be suppressed.
  • the semiconductor layer of the transistor preferably contains a metal oxide (also referred to as an oxide semiconductor).
  • the semiconductor layer of the transistor may include silicon. Examples of silicon include amorphous silicon and crystalline silicon (low temperature polysilicon, single crystal silicon, etc.).
  • the semiconductor layer is, for example, indium and M (M is gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, It is preferable to have zinc and one or more kinds selected from hafnium, tantalum, tungsten, and magnesium).
  • M is preferably one or more selected from aluminum, gallium, yttrium, and tin.
  • an oxide containing indium (In), gallium (Ga), and zinc (Zn) (also referred to as IGZO) is preferably used for the semiconductor layer.
  • the atomic ratio of In in the In-M-Zn oxide is preferably equal to or higher than the atomic ratio of M.
  • the atomic ratio of Ga is larger than 0.1 when the atomic ratio of In is 1. It is 2 or less, including the case where the atomic ratio of Zn is more than 0.1 and 2 or less.
  • the transistor included in the circuit 164 and the transistor included in the display portion 162 may have the same structure or different structures.
  • the plurality of transistors included in the circuit 164 may have the same structure or may have two or more types.
  • the structures of the plurality of transistors included in the display portion 162 may be all the same or may be two or more.
  • connection portion 204 is provided in a region of the substrate 151 where the substrate 152 does not overlap.
  • the wiring 165 is electrically connected to the FPC 172 via the conductive layer 166 and the connection layer 242.
  • the conductive layer 166 obtained by processing the same conductive film as the pixel electrode 191 is exposed. Accordingly, the connection portion 204 and the FPC 172 can be electrically connected via the connection layer 242.
  • optical members can be arranged outside the substrate 152.
  • the optical member include a polarizing plate, a retardation plate, a light diffusing layer (such as a diffusing film), an antireflection layer, and a light collecting film.
  • a polarizing plate a retardation plate
  • a light diffusing layer such as a diffusing film
  • an antireflection layer e.g., a light collecting film.
  • an antistatic film that suppresses adhesion of dust
  • a water-repellent film that prevents adhesion of dirt
  • a hard coat film that suppresses the generation of scratches during use
  • a shock absorbing layer arranged. May be.
  • the substrate 151 and the substrate 152 glass, quartz, ceramics, sapphire, resin, or the like can be used, respectively.
  • a flexible material is used for the substrates 151 and 152, the flexibility of the display device can be increased.
  • various curable adhesives such as a photo-curable adhesive such as an ultraviolet curable adhesive, a reaction curable adhesive, a thermosetting adhesive, and an anaerobic adhesive can be used.
  • these adhesives include epoxy resin, acrylic resin, silicone resin, phenol resin, polyimide resin, imide resin, PVC (polyvinyl chloride) resin, PVB (polyvinyl butyral) resin, EVA (ethylene vinyl acetate) resin, and the like.
  • a material having low moisture permeability such as epoxy resin is preferable.
  • a two-liquid mixed type resin may be used.
  • an adhesive sheet or the like may be used.
  • an anisotropic conductive film (ACF: Anisotropic Conductive Film), an anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.
  • ACF Anisotropic Conductive Film
  • ACP Anisotropic Conductive Paste
  • the light emitting element 190 includes a top emission type, a bottom emission type, a dual emission type and the like.
  • a conductive film that transmits visible light is used for the electrode on the light extraction side. Further, it is preferable to use a conductive film that reflects visible light for the electrode from which light is not extracted.
  • the light emitting element 190 has at least a light emitting layer 193.
  • the light-emitting element 190 includes a substance having a high hole-injection property, a substance having a high hole-transport property, a hole blocking material, a substance having a high electron-transport property, a substance having a high electron-injection property, or a bipolar layer as a layer other than the light-emitting layer 193.
  • a layer containing a conductive substance (a substance having a high electron-transporting property and a high hole-transporting property) or the like may be further included.
  • the common layer 112 preferably has one or both of a hole injection layer and a hole transport layer.
  • the common layer 114 preferably has one or both of an electron transport layer and an electron injection layer.
  • the common layer 112, the light emitting layer 193, and the common layer 114 either a low molecular compound or a high molecular compound can be used, and an inorganic compound may be included.
  • the layers forming the common layer 112, the light emitting layer 193, and the common layer 114 can be formed by a method such as an evaporation method (including a vacuum evaporation method), a transfer method, a printing method, an inkjet method, a coating method, or the like. ..
  • the light emitting layer 193 is a layer containing a light emitting substance.
  • the light emitting layer 193 can include one or more light emitting materials.
  • a substance exhibiting a light-emitting color such as blue, purple, blue-violet, green, yellow-green, yellow, orange, or red is appropriately used.
  • a substance that emits near-infrared light can be used as the light-emitting substance.
  • the active layer 183 of the light receiving element 110 includes a semiconductor.
  • the semiconductor include an inorganic semiconductor such as silicon and an organic semiconductor containing an organic compound.
  • an organic semiconductor is used as a semiconductor included in the active layer.
  • the light-emitting layer 193 of the light-emitting element 190 and the active layer 183 of the light-receiving element 110 can be formed by the same method (for example, a vacuum evaporation method), and a manufacturing apparatus can be shared, which is preferable. ..
  • Examples of the n-type semiconductor material included in the active layer 183 include electron-accepting organic semiconductor materials such as fullerenes (for example, C 60 , C 70, etc.) and their derivatives. Further, as a p-type semiconductor material included in the active layer 183, an electron-donating organic semiconductor material such as copper(II) phthalocyanine (Copper(II) phthalocyanine; CuPc) or tetraphenyldibenzoperifuranthene (DBP) is used. Are listed.
  • the active layer 183 is preferably formed by co-evaporating an n-type semiconductor and a p-type semiconductor.
  • Materials that can be used for conductive layers such as gates, sources, and drains of transistors as well as various wirings and electrodes that configure a display device include aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, and Examples thereof include metals such as tantalum and tungsten, alloys containing the metals as main components, and the like. A film containing these materials can be used as a single layer or as a laminated structure.
  • a conductive oxide such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, or zinc oxide containing gallium, or graphene
  • a metal material such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium, or titanium, or an alloy material containing the metal material
  • a nitride of the metal material for example, titanium nitride
  • a stacked film of any of the above materials can be used as the conductive layer.
  • a stacked film of an alloy of silver and magnesium and indium tin oxide is preferably used because conductivity can be increased.
  • These can be used for a conductive layer such as various wirings and electrodes included in a display device or a conductive layer included in a display element (a conductive layer functioning as a pixel electrode or a common electrode).
  • Examples of insulating materials that can be used for each insulating layer include resins such as acrylic resin and epoxy resin, and inorganic insulating materials such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, and aluminum oxide.
  • FIG. 12A shows a cross-sectional view of the display device 100B.
  • the display device 100B mainly differs from the display device 100A in that the display device 100B has a lens 149 and a protective layer 195. Detailed description of the same configuration as the display device 100A is omitted.
  • the protective layer 195 which covers the light receiving element 110 and the light emitting element 190, impurities such as water can be prevented from entering the light receiving element 110 and the light emitting element 190, and the reliability of the light receiving element 110 and the light emitting element 190 can be improved. it can.
  • the insulating layer 215 and the protective layer 195 are preferably in contact with each other through the opening in the insulating layer 214.
  • the inorganic insulating film of the insulating layer 215 and the inorganic insulating film of the protective layer 195 are preferably in contact with each other. This can prevent impurities from entering the display portion 162 from the outside through the organic insulating film. Therefore, the reliability of the display device 100B can be improved.
  • FIG. 12B shows an example in which the protective layer 195 has a three-layer structure.
  • the protective layer 195 includes an inorganic insulating layer 195a over the common electrode 115, an organic insulating layer 195b over the inorganic insulating layer 195a, and an inorganic insulating layer 195c over the organic insulating layer 195b.
  • the end portion of the inorganic insulating layer 195a and the end portion of the inorganic insulating layer 195c extend outside the end portion of the organic insulating layer 195b and are in contact with each other. Then, the inorganic insulating layer 195a is in contact with the insulating layer 215 (inorganic insulating layer) through the opening of the insulating layer 214 (organic insulating layer). Accordingly, since the light receiving element 110 and the light emitting element 190 can be surrounded by the insulating layer 215 and the protective layer 195, the reliability of the light receiving element 110 and the light emitting element 190 can be improved.
  • the protective layer 195 may have a laminated structure of an organic insulating film and an inorganic insulating film. At this time, it is preferable to extend the end portion of the inorganic insulating film outside the end portion of the organic insulating film.
  • a lens 149 is provided on the surface of the substrate 152 on the substrate 151 side.
  • the lens 149 has a convex surface on the substrate 151 side.
  • the lens 149 is provided so as to overlap the light receiving area of the light receiving element 110. Thereby, the sensitivity and accuracy of the sensor using the light receiving element 110 can be improved.
  • the lens 149 preferably has a refractive index of 1.3 or more and 2.5 or less.
  • the lens 149 can be formed using at least one of an inorganic material and an organic material.
  • a material containing resin can be used for the lens 149.
  • a material containing at least one of oxide and sulfide can be used for the lens 149.
  • a resin containing chlorine, bromine, or iodine, a resin containing a heavy metal atom, a resin containing an aromatic ring, a resin containing sulfur, or the like can be used for the lens 149.
  • a material including a resin and nanoparticles of a material having a higher refractive index than the resin can be used for the lens 149. Titanium oxide or zirconium oxide can be used for the nanoparticles.
  • cerium oxide, hafnium oxide, lanthanum oxide, magnesium oxide, niobium oxide, tantalum oxide, titanium oxide, yttrium oxide, zinc oxide, oxides containing indium and tin, or oxides containing indium, gallium and zinc, etc. It can be used for the lens 149.
  • zinc sulfide or the like can be used for the lens 149.
  • the protective layer 195 and the substrate 152 are attached to each other with the adhesive layer 142.
  • the adhesive layer 142 is provided so as to overlap the light receiving element 110 and the light emitting element 190, respectively, and a solid sealing structure is applied to the display device 100B.
  • FIG. 13A shows a cross-sectional view of the display device 100C.
  • the display device 100C has a transistor structure different from that of the display device 100B.
  • the display device 100C includes the transistor 208, the transistor 209, and the transistor 210 over the substrate 151.
  • the transistor 208, the transistor 209, and the transistor 210 each include a conductive layer 221 functioning as a gate, an insulating layer 211 functioning as a gate insulating layer, a semiconductor layer having a channel formation region 231i and a pair of low resistance regions 231n, and a pair of low resistance regions.
  • the conductive layer 222a connected to one of the pair of low resistance regions 231n, the conductive layer 222b connected to the other of the pair of low resistance regions 231n, the insulating layer 225 functioning as a gate insulating layer, the conductive layer 223 functioning as a gate, and the conductive layer 223 are covered. It has an insulating layer 215.
  • the insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i.
  • the insulating layer 225 is located between the conductive layer 223 and the channel formation region 231i.
  • the conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215, respectively.
  • One of the conductive layers 222a and 222b functions as a source and the other functions as a drain.
  • the pixel electrode 191B of the light emitting element 190B is electrically connected to one of the pair of low resistance regions 231n of the transistor 208 through the conductive layer 222b.
  • the pixel electrode 181 of the light receiving element 110 is electrically connected to the other of the pair of low resistance regions 231n of the transistor 209 via the conductive layer 222b.
  • FIG. 13A shows an example in which the insulating layer 225 covers the top surface and the side surface of the semiconductor layer.
  • the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 and does not overlap with the low resistance region 231n.
  • the structure shown in FIG. 13B can be manufactured by processing the insulating layer 225 using the conductive layer 223 as a mask.
  • the insulating layer 215 is provided so as to cover the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n through the opening of the insulating layer 215, respectively.
  • an insulating layer 218 which covers the transistor may be provided.
  • FIG. 14 shows a cross-sectional view of the display device 100D.
  • the display device 100D is different from the display device 100C in that it has a colored layer 148a.
  • the colored layer 148a has a portion in contact with an upper surface of the pixel electrode 181 included in the light receiving element 110 and a portion in contact with a side surface of the partition wall 216.
  • the colored layer 148a absorbs stray light generated in the display device 100D, the amount of stray light incident on the light receiving element 110 can be reduced. Thereby, noise can be reduced and the sensitivity of the sensor using the light receiving element 110 can be increased.
  • the display device 100D is different from the display device 100C in that the display device 100D does not include the substrate 151 and the substrate 152, but includes the substrate 153, the substrate 154, the adhesive layer 155, and the insulating layer 212.
  • the substrate 153 and the insulating layer 212 are attached to each other with an adhesive layer 155.
  • the substrate 154 and the protective layer 195 are attached to each other with the adhesive layer 142.
  • the display device 100D has a structure manufactured by transferring the insulating layer 212, the transistor 208, the transistor 209, the transistor 210, the light-receiving element 110, the light-emitting element 190B, and the like formed over the manufacturing substrate over the substrate 153. .. It is preferable that each of the substrate 153 and the substrate 154 have flexibility. Thereby, the flexibility of the display device 100D can be improved.
  • an inorganic insulating film that can be used for the insulating layers 211 and 215 can be used.
  • the display device 100C shows an example without the lens 149
  • the display device 100D shows an example with the lens 149.
  • the lens 149 can be appropriately provided depending on the application of the sensor and the like.
  • Metal oxide The metal oxide applicable to the semiconductor layer will be described below.
  • metal oxides containing nitrogen may be collectively referred to as metal oxides. Further, the metal oxide containing nitrogen may be referred to as a metal oxynitride. For example, a metal oxide containing nitrogen such as zinc oxynitride (ZnON) may be used for the semiconductor layer.
  • ZnON zinc oxynitride
  • CAAC c-axis aligned crystal
  • CAC Cloud-Aligned Composite
  • CAC Cloud-Aligned Composite
  • OS Organic Semiconductor
  • the CAC-OS or the CAC-metal oxide has a conductive function in a part of the material and an insulating function in a part of the material, and the whole material has a function as a semiconductor.
  • a conductive function is a function of flowing electrons (or holes) serving as carriers
  • an insulating function is an electron serving as carriers. It is a function that does not flow.
  • the CAC-OS or the CAC-metal oxide has a conductive region and an insulating region.
  • the conductive region has the above-mentioned conductive function
  • the insulating region has the above-mentioned insulating function.
  • the conductive region and the insulating region may be separated at the nanoparticle level.
  • the conductive region and the insulating region may be unevenly distributed in the material.
  • the conductive region may be observed by blurring the periphery and connecting in a cloud shape.
  • the conductive region and the insulating region are dispersed in the material in a size of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less. There is.
  • the CAC-OS or CAC-metal oxide is composed of components having different band gaps.
  • CAC-OS or CAC-metal oxide is composed of a component having a wide gap due to the insulating region and a component having a narrow gap due to the conductive region.
  • the carrier when the carrier flows, the carrier mainly flows in the component having the narrow gap.
  • the component having the narrow gap acts complementarily to the component having the wide gap, and the carrier also flows in the component having the wide gap in conjunction with the component having the narrow gap. Therefore, when the CAC-OS or CAC-metal oxide is used in the channel formation region of the transistor, a high current driving force, that is, a large on-current and a high field-effect mobility can be obtained in the on state of the transistor.
  • the CAC-OS or the CAC-metal oxide can also be referred to as a matrix composite material or a metal matrix composite material.
  • the oxide semiconductor (metal oxide) is classified into a single crystal oxide semiconductor and a non-single crystal oxide semiconductor other than the single crystal oxide semiconductor.
  • the non-single-crystal oxide semiconductor include a CAAC-OS (c-axis aligned crystal line oxide semiconductor), a polycrystalline oxide semiconductor, an nc-OS (nanocrystal oxide semiconductor), and a pseudo-amorphous oxide semiconductor (a-like oxide).
  • OS amorphous-like oxide semiconductor), and amorphous oxide semiconductor.
  • the CAAC-OS has a crystal structure having c-axis orientation and a plurality of nanocrystals connected to each other in the ab plane direction and having strain.
  • the strain refers to a portion in which the orientation of the lattice arrangement is changed between a region where the lattice arrangement is uniform and another region where the lattice arrangement is uniform in the region where the plurality of nanocrystals are connected.
  • the nanocrystal is basically a hexagon, but is not limited to a regular hexagon, and may be a non-regular hexagon.
  • the strain may have a lattice arrangement such as a pentagon and a heptagon.
  • a lattice arrangement such as a pentagon and a heptagon.
  • the CAAC-OS is a layered crystal in which a layer containing indium and oxygen (hereinafter, an In layer) and a layer containing elements M, zinc, and oxygen (hereinafter, a (M,Zn) layer) are stacked. It tends to have a structure (also called a layered structure).
  • indium and the element M can be replaced with each other, and when the element M of the (M,Zn) layer is replaced with indium, it can be expressed as an (In,M,Zn) layer.
  • the indium in the In layer is replaced with the element M, it can be expressed as an (In,M) layer.
  • CAAC-OS is a metal oxide with high crystallinity.
  • CAAC-OS since it is difficult to confirm a clear crystal grain boundary, it can be said that a decrease in electron mobility due to the crystal grain boundary does not easily occur.
  • CAAC-OS impurities and defects oxygen deficiency (V O:. Oxygen vacancy also referred) etc.) with less metal It can be said to be an oxide. Therefore, the metal oxide having CAAC-OS has stable physical properties. Therefore, the metal oxide containing CAAC-OS is highly heat resistant and highly reliable.
  • the nc-OS has a periodic atomic arrangement in a minute region (for example, a region of 1 nm or more and 10 nm or less, particularly a region of 1 nm or more and 3 nm or less). Moreover, in the nc-OS, no regularity is found in the crystal orientation between different nanocrystals. Therefore, no orientation is seen in the entire film. Therefore, the nc-OS may be indistinguishable from the a-like OS or the amorphous oxide semiconductor depending on the analysis method.
  • IGZO indium-gallium-zinc oxide
  • IGZO indium-gallium-zinc oxide
  • IGZO may have a stable structure by using the above-described nanocrystal.
  • IGZO tends to have difficulty in crystal growth in the atmosphere, and thus a smaller crystal (for example, the above-mentioned nanocrystal) is used than a large crystal (here, a crystal of several mm or a crystal of several cm).
  • a large crystal here, a crystal of several mm or a crystal of several cm.
  • it may be structurally stable.
  • the a-like OS is a metal oxide having a structure between the nc-OS and the amorphous oxide semiconductor.
  • the a-like OS has a void or a low density region. That is, the crystallinity of the a-like OS is lower than that of the nc-OS and the CAAC-OS.
  • Oxide semiconductors have various structures and have different characteristics.
  • the oxide semiconductor of one embodiment of the present invention may include two or more of an amorphous oxide semiconductor, a polycrystalline oxide semiconductor, an a-like OS, an nc-OS, and a CAAC-OS.
  • the metal oxide film functioning as a semiconductor layer can be formed using one or both of an inert gas and an oxygen gas.
  • an inert gas oxygen gas
  • oxygen flow rate ratio oxygen partial pressure
  • the flow rate ratio of oxygen (oxygen partial pressure) during the formation of the metal oxide film is preferably 0% to 30%, preferably 5% to 30%. Is more preferable and 7% or more and 15% or less is still more preferable.
  • the energy gap of the metal oxide is preferably 2 eV or more, more preferably 2.5 eV or more, and further preferably 3 eV or more.
  • the substrate temperature during the formation of the metal oxide film is preferably 350° C. or lower, more preferably room temperature or higher and 200° C. or lower, still more preferably room temperature or higher and 130° C. or lower.
  • productivity can be improved, which is preferable.
  • the metal oxide film can be formed by a sputtering method. Besides, for example, a PLD method, a PECVD method, a thermal CVD method, an ALD method, a vacuum evaporation method, or the like may be used.
  • the display device of this embodiment has the light receiving element and the light emitting element in the display portion, and the display portion has both a function of displaying an image and a function of detecting light.
  • the display portion has both a function of displaying an image and a function of detecting light.
  • the layers provided between the pair of electrodes can have a common structure with the light emitting element (EL element).
  • all layers other than the active layer may have the same configuration as the light emitting element (EL element). That is, the light emitting element and the light receiving element can be formed on the same substrate only by adding the step of forming the active layer to the manufacturing step of the light emitting element.
  • the pixel electrode and the common electrode can be formed using the same material and the same process, respectively.
  • the manufacturing process of the display device can be simplified by manufacturing a circuit electrically connected to the light-receiving element and a circuit electrically connected to the light-emitting element with the same material and the same step. .. As described above, it is possible to manufacture a highly convenient display device with a built-in light receiving element, even without complicated steps.
  • a display device of one embodiment of the present invention includes a first pixel circuit having a light receiving element and a second pixel circuit having a light emitting element.
  • the first pixel circuit and the second pixel circuit are arranged in a matrix.
  • FIG. 15A shows an example of a first pixel circuit having a light receiving element
  • FIG. 15B shows an example of a second pixel circuit having a light emitting element.
  • the pixel circuit PIX1 illustrated in FIG. 15A includes a light receiving element PD, a transistor M1, a transistor M2, a transistor M3, a transistor M4, and a capacitor C1.
  • a photodiode is used as the light receiving element PD.
  • the cathode is electrically connected to the wiring V1 and the anode is electrically connected to one of the source and the drain of the transistor M1.
  • the gate of the transistor M1 is electrically connected to the wiring TX, and the other of the source and the drain is electrically connected to one electrode of the capacitor C1, one of the source and the drain of the transistor M2, and the gate of the transistor M3.
  • the gate is electrically connected to the wiring RES, and the other of the source and the drain is electrically connected to the wiring V2.
  • One of a source and a drain of the transistor M3 is electrically connected to the wiring V3, and the other of the source and the drain is electrically connected to one of a source and a drain of the transistor M4.
  • the gate is electrically connected to the wiring SE and the other of the source and the drain is electrically connected to the wiring OUT1.
  • a constant potential is supplied to each of the wiring V1, the wiring V2, and the wiring V3.
  • the transistor M2 is controlled by a signal supplied to the wiring RES and has a function of resetting the potential of the node connected to the gate of the transistor M3 to the potential supplied to the wiring V2.
  • the transistor M1 is controlled by a signal supplied to the wiring TX and has a function of controlling the timing when the potential of the node changes in accordance with the current flowing in the light-receiving element PD.
  • the transistor M3 functions as an amplifying transistor that outputs according to the potential of the node.
  • the transistor M4 is controlled by a signal supplied to the wiring SE and functions as a selection transistor for reading an output corresponding to the potential of the above node by an external circuit connected to the wiring OUT1.
  • the pixel circuit PIX2 illustrated in FIG. 15B includes a light emitting element EL, a transistor M5, a transistor M6, a transistor M7, and a capacitor C2.
  • a light emitting diode is used as the light emitting element EL.
  • the gate is electrically connected to the wiring VG
  • one of the source and the drain is electrically connected to the wiring VS
  • the other of the source and the drain is one electrode of the capacitor C2 and the gate of the transistor M6.
  • One of a source and a drain of the transistor M6 is electrically connected to the wiring V4, and the other is electrically connected to an anode of the light emitting element EL and one of a source and a drain of the transistor M7.
  • a gate of the transistor M7 is electrically connected to the wiring MS, and the other of the source and the drain is electrically connected to the wiring OUT2.
  • the cathode of the light emitting element EL is electrically connected to the wiring V5.
  • a constant potential is supplied to each of the wiring V4 and the wiring V5.
  • the anode side of the light emitting element EL can be set to a high potential and the cathode side can be set to a lower potential than the anode side.
  • the transistor M5 is controlled by a signal supplied to the wiring VG and functions as a selection transistor for controlling the selection state of the pixel circuit PIX2. Further, the transistor M6 functions as a drive transistor that controls the current flowing through the light emitting element EL according to the potential supplied to the gate. When the transistor M5 is conductive, the potential supplied to the wiring VS is supplied to the gate of the transistor M6, and the emission brightness of the light emitting element EL can be controlled in accordance with the potential.
  • the transistor M7 is controlled by a signal supplied to the wiring MS and has a function of outputting the potential between the transistor M6 and the light-emitting element EL to the outside through the wiring OUT2.
  • the wiring V1 to which the cathode of the light receiving element PD is electrically connected and the wiring V5 to which the cathode of the light emitting element EL is electrically connected can be in the same layer and at the same potential.
  • an image may be displayed by causing the light-emitting element to emit light in pulses.
  • the organic EL element is suitable because it has excellent frequency characteristics.
  • the frequency can be, for example, 1 kHz or more and 100 MHz or less.
  • the transistor M1, the transistor M2, the transistor M3, and the transistor M4 included in the pixel circuit PIX1, and the transistor M5, the transistor M6, and the transistor M7 included in the pixel circuit PIX2 are formed on a semiconductor layer in which a channel is formed, respectively. It is preferable to apply a transistor including an oxide (oxide semiconductor).
  • a transistor including a metal oxide having a wider bandgap and a smaller carrier density than silicon can realize an extremely small off-state current. Therefore, due to the small off-state current, the charge accumulated in the capacitor connected in series with the transistor can be held for a long time. Therefore, it is preferable to use a transistor to which an oxide semiconductor is applied, particularly for the transistor M1, the transistor M2, and the transistor M5 which are connected in series to the capacitor C1 or the capacitor C2. In addition, the manufacturing cost can be reduced by using a transistor to which an oxide semiconductor is applied for the other transistors.
  • transistors M1 to M7 transistors in which silicon is used as a semiconductor in which a channel is formed can be used.
  • silicon having high crystallinity such as single crystal silicon or polycrystalline silicon because high field-effect mobility can be realized and higher speed operation can be performed.
  • one of the transistors M1 to M7 may be a transistor to which an oxide semiconductor is applied, and another transistor to which silicon is applied may be used.
  • transistors are described as n-channel transistors in FIGS. 15A and 15B, p-channel transistors can also be used.
  • the transistor included in the pixel circuit PIX1 and the transistor included in the pixel circuit PIX2 are formed side by side on the same substrate.
  • the transistors included in the pixel circuit PIX1 and the transistors included in the pixel circuit PIX2 are mixed in one region and periodically arranged.
  • one or a plurality of layers each including one or both of a transistor and a capacitor be provided in a position overlapping with the light-receiving element PD or the light-emitting element EL.
  • the effective occupied area of each pixel circuit can be reduced, and a high-definition display unit can be realized.
  • the imaging data acquired using the light receiving element be individually read out one by one (one pixel at a time) for all pixels.
  • higher resolution is not required as compared with fingerprint authentication, but high-speed read operation is required.
  • the drive frequency can be increased by collectively performing touch detection on a plurality of pixels.
  • the pixels to be read simultaneously can be appropriately determined as 4 pixels (2 ⁇ 2 pixels), 9 pixels (3 ⁇ 3 pixels), 16 pixels (4 ⁇ 4 pixels), or the like.
  • FIG. 16A shows an example in which image pickup data of the light receiving elements PD included in a plurality of pixels are collectively read.
  • One pixel 300 includes a light receiving element PD, a sub-pixel R that emits red light, a sub-pixel G that emits green light, and a sub-pixel B that emits blue light.
  • 16A illustrates an example in which the unit 310 includes nine pixels 300 (3 ⁇ 3 pixels), the number of pixels included in the unit 310 is not particularly limited. Imaging data is simultaneously read out from the pixels 300 included in the same unit 310. For example, first, the imaging data of the unit 310a is read, and then the imaging data of the unit 310b is read. As a result, the number of times of reading can be reduced and the driving frequency can be increased as compared with the case of reading the imaged data individually for each pixel.
  • the image pickup data of the unit 310a is the data obtained by adding the image pickup data of the plurality of pixels 300 (here, nine pixels 300), the sensitivity can be enhanced as compared with the case where the image pickup is performed pixel by pixel. ..
  • touch detection may be performed using only some pixels.
  • the pixels used for touch detection are appropriately determined to be 1 pixel for 4 pixels (2 ⁇ 2 pixels), 1 pixel for 100 pixels (10 ⁇ 10 pixels), or 1 pixel for 900 pixels (30 ⁇ 30 pixels). be able to.
  • FIG. 16B shows an example in which touch detection is performed using only some pixels.
  • One pixel 300 includes a light receiving element PD, a sub-pixel R that emits red light, a sub-pixel G that emits green light, and a sub-pixel B that emits blue light.
  • the target pixel 320 to be read out is only the pixel 300 surrounded by the alternate long and short dash line. 16B shows an example in which the target pixel 320 used for touch detection is one pixel out of nine pixels (3 ⁇ 3 pixels), but the number of target pixels 320 is not particularly limited.
  • the image pickup data of the target pixel 320a is read out, and then the image pickup data of the target pixel 320b is read out.
  • the imaging data is not read from the pixel 300 located between the target pixel 320a and the target pixel 320b. As a result, the number of times of reading can be reduced and the driving frequency can be increased as compared with the case of reading the imaged data of all the pixels pixel by pixel.
  • the plurality of pixels 300 may be used as the target pixel 320 in an alternating manner.
  • the target pixel 320 may be shifted by one row or one column, and three pixels may be alternately used as the target pixel 320.
  • all 9 pixels may be used as the target pixel 320 in an alternating manner.
  • the display device of one embodiment of the present invention have two or more kinds of operation modes of the light-receiving element and these operation modes can be switched to each other.
  • these operation modes can be switched to each other.
  • the light emitting element is periodically turned on and off, and the difference between the detected intensities of the light receiving element when light is turned on and when it is turned off (non-lighted) is acquired to eliminate the influence of ambient light. can do.
  • a plurality of pixels that are repeatedly turned on and off be provided as long as they do not affect the image displayed on the display device.
  • the color of light emitted when the light is turned on is not particularly limited.
  • FIG. 17A the pixels 330a and 330d are turned off, and the pixels 330b and 330c are turned on.
  • FIG. 17B the pixels 330a and 330d are turned on and the pixels 330b and 330c are turned off. There is.
  • the detection intensity of the light receiving element does not change when the light source is turned on and when it is turned off.
  • the detection intensity of the light receiving element changes depending on whether the light emitting element is on or off. The influence of ambient light can be removed by utilizing the difference between the detected intensities when the light is turned on and when the light is turned off.
  • the display device of the present embodiment can be driven in any one of the mode in which an image is captured for each unit and the mode in which an image is captured for each light receiving element. For example, when high-speed operation is required, a mode in which imaging is performed for each unit can be used. Further, when high-resolution imaging is required, a mode in which imaging is performed pixel by pixel (one light receiving element at a time) can be used.
  • the functionality of the display device can be enhanced by changing the drive mode depending on the application.
  • the electronic device in this embodiment includes the display device of one embodiment of the present invention.
  • the display device of one embodiment of the present invention can be applied to a display portion of an electronic device. Since the display device of one embodiment of the present invention has a function of detecting light, biometric authentication can be performed on the display portion or contact or proximity can be detected. As a result, the functionality and convenience of the electronic device can be improved.
  • Examples of electronic devices include television devices, desktop or notebook personal computers, monitors for computers, digital signage, electronic devices with relatively large screens such as large game machines such as pachinko machines, and digital devices. Examples thereof include a camera, a digital video camera, a digital photo frame, a mobile phone, a portable game machine, a personal digital assistant, and a sound reproducing device.
  • the electronic device includes sensors (force, displacement, position, velocity, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current, voltage. , The function of measuring electric power, radiation, flow rate, humidity, gradient, vibration, odor or infrared light).
  • the electronic device of this embodiment can have various functions. For example, a function of displaying various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function of displaying a calendar, date or time, a function of executing various software (programs), wireless communication It can have a function, a function of reading a program or data recorded in a recording medium, and the like.
  • the electronic device 6500 illustrated in FIG. 18A is a personal digital assistant that can be used as a smartphone.
  • the electronic device 6500 includes a housing 6501, a display portion 6502, a power button 6503, a button 6504, a speaker 6505, a microphone 6506, a camera 6507, a light source 6508, and the like.
  • the display portion 6502 has a touch panel function.
  • the display device of one embodiment of the present invention can be applied to the display portion 6502.
  • FIG. 18B is a schematic sectional view including an end portion of the housing 6501 on the microphone 6506 side.
  • a protective member 6510 having a light-transmitting property is provided on the display surface side of the housing 6501, and a display panel 6511, an optical member 6512, a touch sensor panel 6513, a print are provided in a space surrounded by the housing 6501 and the protective member 6510.
  • a substrate 6517, a battery 6518, and the like are arranged.
  • a display panel 6511, an optical member 6512, and a touch sensor panel 6513 are fixed to the protective member 6510 with an adhesive layer (not shown).
  • part of the display panel 6511 is folded back, and the FPC 6515 is connected to the folded portion.
  • An IC 6516 is mounted on the FPC 6515.
  • the FPC 6515 is connected to a terminal provided on the printed board 6517.
  • the flexible display of one embodiment of the present invention can be applied to the display panel 6511. Therefore, an extremely lightweight electronic device can be realized. Further, since the display panel 6511 is extremely thin, a large-capacity battery 6518 can be mounted while suppressing the thickness of the electronic device. Further, a part of the display panel 6511 is folded back and a connection portion with the FPC 6515 is provided on the back side of the pixel portion, whereby an electronic device with a narrow frame can be realized.
  • FIG. 19A shows an example of a television device.
  • a display portion 7000 is incorporated in a housing 7101 of the television device 7100.
  • a structure is shown in which the housing 7101 is supported by a stand 7103.
  • the display device of one embodiment of the present invention can be applied to the display portion 7000.
  • the television device 7100 illustrated in FIG. 19A can be operated with an operation switch included in the housing 7101 or a separate remote controller 7111.
  • the display portion 7000 may be provided with a touch sensor, and the television device 7100 may be operated by touching the display portion 7000 with a finger or the like.
  • the remote controller 7111 may have a display portion for displaying information output from the remote controller 7111.
  • a channel and a volume can be operated with an operation key or a touch panel included in the remote controller 7111, and an image displayed on the display portion 7000 can be operated.
  • the television device 7100 is provided with a receiver, a modem, and the like.
  • a general television broadcast can be received by the receiver.
  • unidirectional (sender to receiver) or bidirectional (between sender and receiver, or between receivers) information communication is performed. It is also possible.
  • FIG. 19B shows an example of a laptop personal computer.
  • the laptop personal computer 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like.
  • a display portion 7000 is incorporated in the housing 7211.
  • the display device of one embodiment of the present invention can be applied to the display portion 7000.
  • 19C and 19D show an example of digital signage.
  • a digital signage 7300 illustrated in FIG. 19C includes a housing 7301, a display portion 7000, a speaker 7303, and the like. Further, an LED lamp, an operation key (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, and the like can be provided.
  • FIG. 19D is a digital signage 7400 attached to a cylindrical post 7401.
  • the digital signage 7400 includes a display portion 7000 provided along the curved surface of the pillar 7401.
  • the display device of one embodiment of the present invention can be applied to the display portion 7000.
  • the display unit 7000 As the display unit 7000 is wider, the amount of information that can be provided at one time can be increased. Further, the wider the display unit 7000 is, the more noticeable it is to a person, and, for example, the advertising effect of an advertisement can be enhanced.
  • a touch panel By applying a touch panel to the display portion 7000, not only an image or a moving image is displayed on the display portion 7000, but also a user can operate intuitively, which is preferable. In addition, when it is used for the purpose of providing information such as route information or traffic information, usability can be improved by an intuitive operation.
  • the digital signage 7300 or the digital signage 7400 can cooperate with the information terminal device 7311 or the information terminal device 7411 such as a smartphone owned by the user by wireless communication.
  • the advertisement information displayed on the display unit 7000 can be displayed on the screen of the information terminal 7311 or the information terminal 7411. Further, by operating the information terminal device 7311 or the information terminal device 7411, the display of the display portion 7000 can be switched.
  • the digital signage 7300 or the digital signage 7400 can be caused to execute a game using the screen of the information terminal 7311 or the information terminal 7411 as an operation unit (controller). This allows an unspecified number of users to simultaneously participate in the game and enjoy it.
  • the electronic devices illustrated in FIGS. 20A to 20F include a housing 9000, a display portion 9001, a speaker 9003, operation keys 9005 (including a power switch or an operation switch), a connection terminal 9006, a sensor 9007 (force, displacement, position, speed). , Acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemical substance, voice, time, hardness, electric field, current, voltage, power, radiation, flow rate, humidity, gradient, vibration, odor or infrared Including a function to perform), a microphone 9008, and the like.
  • the electronic devices illustrated in FIGS. 20A to 20F have various functions. For example, a function of displaying various information (still image, moving image, text image, etc.) on the display unit, a touch panel function, a function of displaying a calendar, date or time, a function of controlling processing by various software (programs), It can have a wireless communication function, a function of reading and processing a program or data recorded in a recording medium, and the like. Note that the functions of the electronic device are not limited to these and can have various functions.
  • the electronic device may have a plurality of display units.
  • the electronic device is provided with a camera or the like and has a function of shooting a still image or a moving image and storing it in a recording medium (external or built in the camera), a function of displaying the taken image on the display unit, or the like. Good.
  • FIGS. 20A to 20F Details of the electronic devices illustrated in FIGS. 20A to 20F will be described below.
  • FIG. 20A is a perspective view showing portable information terminal 9101.
  • the mobile information terminal 9101 can be used as, for example, a smartphone.
  • the portable information terminal 9101 may be provided with a speaker 9003, a connection terminal 9006, a sensor 9007, and the like.
  • the mobile information terminal 9101 can display characters and image information on its plurality of surfaces.
  • FIG. 20A shows an example in which three icons 9050 are displayed.
  • the information 9051 indicated by a dashed rectangle can be displayed on another surface of the display portion 9001.
  • Examples of the information 9051 include notification of an incoming call such as e-mail, SNS, and telephone, title of e-mail, SNS, etc., sender's name, date and time, time, battery level, antenna reception strength, and the like.
  • the icon 9050 or the like may be displayed at the position where the information 9051 is displayed.
  • FIG. 20B is a perspective view showing portable information terminal 9102.
  • the mobile information terminal 9102 has a function of displaying information on three or more surfaces of the display portion 9001.
  • the information 9052, the information 9053, and the information 9054 are displayed on different surfaces is shown.
  • the user can check the information 9053 displayed at a position where it can be observed from above the mobile information terminal 9102 while the mobile information terminal 9102 is stored in the chest pocket of clothes. The user can confirm the display without taking out the portable information terminal 9102 from the pocket, and can judge whether to receive the call, for example.
  • FIG. 20C is a perspective view showing a wristwatch type portable information terminal 9200.
  • the mobile information terminal 9200 can be used as, for example, a smart watch. Further, the display portion 9001 is provided with a curved display surface, and display can be performed along the curved display surface.
  • the mobile information terminal 9200 can also make a hands-free call by, for example, mutual communication with a headset capable of wireless communication.
  • the portable information terminal 9200 can also perform data transmission with another information terminal or charge by using the connection terminal 9006. Note that the charging operation may be performed by wireless power feeding.
  • 20D to 20F are perspective views showing a foldable portable information terminal 9201.
  • 20D is a perspective view of the mobile information terminal 9201 in an unfolded state
  • FIG. 20F is a folded state
  • FIG. 20E is a perspective view of a state in which the portable information terminal 9201 is being changed from one of FIG. 20D to the other.
  • the portable information terminal 9201 is excellent in portability in a folded state and excellent in displayability due to a wide display area without a joint in an expanded state.
  • a display portion 9001 included in the portable information terminal 9201 is supported by three housings 9000 connected by a hinge 9055.
  • the display portion 9001 can be bent with a radius of curvature of 0.1 mm or more and 150 mm or less.
  • a light emitting and receiving element that can be used for the display device of one embodiment of the present invention is manufactured and evaluated.
  • elements that function as both a light emitting element and a light receiving element are referred to as light receiving and emitting elements.
  • the light emitting/receiving element manufactured in this example has a structure in common with the light emitting element (organic EL element).
  • Table 1 shows a specific configuration of the light emitting and receiving element of this example.
  • a laminated structure of a light emitting element 47R and a light receiving element 46 that emits red (R) light shown in FIG. 7A was applied to the device 1.
  • the device 1 has a laminated structure which can be manufactured by replacing the hole transport layer of the light emitting element with the active layer of the light receiving element.
  • a laminated structure of a light emitting element 47R and a light receiving element 46 that emits red (R) light shown in FIG. 7B was applied to the device 2.
  • the device 2 has a laminated structure which can be produced by adding an active layer of the light receiving element to the light emitting element.
  • an alloy of silver (Ag), palladium (Pd), and copper (Cu) (Ag-Pd-Cu (APC)) is formed by a sputtering method so as to have a film thickness of 100 nm, and silicon oxide is formed.
  • silicon oxide is formed by depositing indium tin oxide containing oxide (ITSO) to a thickness of 100 nm by a sputtering method.
  • ITSO indium tin oxide containing oxide
  • PCPPn 3-[4-(9-phenanthryl)-phenyl]-9-phenyl-9H-carbazole
  • the active layer was formed to have a thickness of 60 nm.
  • the hole transport layer was not provided in the device 1 but was provided in the device 2.
  • the hole transport layer is N-(1,1'-biphenyl-4-yl)-N-[4-(9-phenyl-9H-carbazol-3-yl)phenyl]-9,9-dimethyl-9H-.
  • vapor deposition was performed to a film thickness of 70 nm.
  • the light-emitting layer is formed of 2-[3′-(dibenzothiophen-4-yl)biphenyl-3-yl]dibenzo[f,h]quinoxaline (abbreviation: 2mDBTBPDBq-II), PCBBiF, and bis ⁇ 4,6-dimethyl.
  • the thickness of 2mDBTBPDBq-II is 10 nm
  • the thickness of 2,9-bis(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline is 10 nm.
  • the layers were sequentially deposited.
  • the electron injection layer was formed by using lithium fluoride (LiF) by vapor deposition so as to have a film thickness of 1 nm.
  • LiF lithium fluoride
  • the second electrode was formed by co-evaporation so that the volume ratio of silver (Ag) and magnesium (Mg) was 10:1 and the film thickness was 10 nm, and then indium tin oxide (ITO) was sputtered. By the method, it was formed to have a thickness of 40 nm.
  • the light emitting/receiving element of this example was manufactured.
  • FIG. 21 shows the voltage-luminance characteristics of the light emitting/receiving element.
  • FIG. 22 shows luminance-external quantum efficiency characteristics of the light emitting/receiving element.
  • both device 1 and device 2 operate normally as a light emitting element.
  • the device 2 in which the hole transport layer was provided between the active layer and the light emitting layer had high external quantum efficiency.
  • FIG. 23 shows the wavelength dependence of the light receiving sensitivity of the light emitting and receiving element.
  • the voltage was set to ⁇ 6 V, and light was applied at 10 ⁇ W/cm 2 .
  • the voltage applied here is a value when the bias applied to the EL device is normally positive. That is, the case where the first electrode side has a high potential and the second electrode side has a low potential is positive.
  • both device 1 and device 2 operate normally as a light receiving element.
  • a light emitting/receiving element having a structure having a structure common to that of the light emitting element (organic EL element) can be manufactured, and good characteristics can be obtained as both the light emitting element and the light receiving element. It was
  • each of the device 1 and the device 2 can operate as a light emitting element and can operate as a light receiving element. Therefore, it was found that the light emitting element 47R and the light receiving element 46 can have the same configuration of the device 1 or the device 2.

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US17/422,527 US12219852B2 (en) 2019-01-18 2020-01-06 Display device, display module, and electronic device including a light-receiving element and light-emitting elements
JP2020566348A JP7665336B2 (ja) 2019-01-18 2020-01-06 表示装置
US19/023,842 US20250169321A1 (en) 2019-01-18 2025-01-16 Display Device, Display Module, and Electronic Device
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