WO2020134669A1 - 晶体管的制作方法及全包围栅极器件结构 - Google Patents

晶体管的制作方法及全包围栅极器件结构 Download PDF

Info

Publication number
WO2020134669A1
WO2020134669A1 PCT/CN2019/117797 CN2019117797W WO2020134669A1 WO 2020134669 A1 WO2020134669 A1 WO 2020134669A1 CN 2019117797 W CN2019117797 W CN 2019117797W WO 2020134669 A1 WO2020134669 A1 WO 2020134669A1
Authority
WO
WIPO (PCT)
Prior art keywords
gate
layer
hole
manufacturing
channel region
Prior art date
Application number
PCT/CN2019/117797
Other languages
English (en)
French (fr)
Inventor
秦晓珊
Original Assignee
中芯集成电路（宁波）有限公司上海分公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 中芯集成电路（宁波）有限公司上海分公司 filed Critical 中芯集成电路（宁波）有限公司上海分公司
Priority to JP2021515587A priority Critical patent/JP2022500879A/ja
Priority to KR1020217014546A priority patent/KR20210075164A/ko
Publication of WO2020134669A1 publication Critical patent/WO2020134669A1/zh
Priority to US17/210,917 priority patent/US20210234035A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66484—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with multiple gate, at least one gate being an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H01L21/31055—Planarisation of the insulating layers involving a dielectric removal step the removal being a chemical etching step, e.g. dry etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
    • H01L21/76283—Lateral isolation by refilling of trenches with dielectric material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/78654—Monocrystalline silicon transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L2029/7858—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET having contacts specially adapted to the FinFET geometry, e.g. wrap-around contacts

Definitions

  • the present invention relates to the field of semiconductor technology, and more particularly, to a method for manufacturing a transistor and a structure of a fully enclosed gate device.
  • the channel of the MOS transistor can have a high breakdown voltage and a high current Ids. If the channel length is increased, the breakdown voltage can be increased, but the current Ids will be reduced.
  • the upper gate dielectric and the upper gate electrode are first generated on the upper surface of the channel region, and then the back gate dielectric and the back gate electrode are generated on the lower surface of the channel region.
  • This structure is called The double-gate electrode structure requires two gate dielectric layers to be grown, and the manufacturing process is complicated, which results in a lower capacity and is not conducive to mass production of devices.
  • the purpose of the present invention is to further simplify the growth process of the gate dielectric layer of the MOS transistor, while ensuring that the channel can have a high breakdown voltage and a high current Ids.
  • the substrate including a bottom substrate, an insulating layer and a top substrate in sequence from bottom to top;
  • holes on the top substrate are formed on both sides of the channel region;
  • a gate structure is formed to cover the upper surface of the channel region, the hole, and the wall surface of the cavity near the channel region.
  • the gate structure includes a gate dielectric layer and a gate covering the gate dielectric layer.
  • the method of forming the hole includes:
  • the substrate is etched to form the hole.
  • the method of forming a cavity includes:
  • the insulating layer is etched to form the cavity.
  • the etching includes wet etching or dry etching.
  • the insulating layer is silicon oxide.
  • the solution used in the wet etching is HF with a concentration of 10%-20%.
  • the gate dielectric layer includes an oxide layer.
  • the oxide layer is formed by thermal oxidation or atomic layer deposition.
  • the method for forming the gate includes:
  • the gate electrode layer is patterned to form the gate.
  • the material of the gate is polysilicon or metal.
  • the method further includes in-situ doping the gate electrode layer when the gate material is polysilicon.
  • the method further includes: metalizing the top surface of the gate to generate a metal silicide.
  • the method further includes: filling an insulating material in the hole.
  • a device structure that fully surrounds a gate including:
  • a gate structure formed on the upper surface of the channel region, the hole, and the cavity near the wall surface of the channel region.
  • the gate structure includes a gate dielectric layer and a gate covering the gate dielectric layer.
  • the material of the gate is polysilicon or metal.
  • the method further includes: a metal silicide formed on the top surface of the gate.
  • the hole is filled with insulating material.
  • the beneficial effects of the present invention are: forming holes on both sides of the channel region of the top silicon layer of SOI, forming a cavity communicating with the holes below the channel region, and forming a fully enclosed gate on the upper and lower surfaces of the channel region and on both sides
  • the structure, through the fully enclosed gate structure, increases the control capability of the gate to the channel, improves the breakdown voltage, and at the same time increases the current Ids, simplifies the growth process of the gate insulating layer of the MOS transistor, and facilitates mass production.
  • FIG. 1 is a flowchart of a method of manufacturing a transistor according to an embodiment of the present invention.
  • FIG. 2 is a top view of a fully enclosed gate device structure according to an embodiment of the present invention.
  • FIG. 3(A) to FIG. 3(E) are schematic diagrams of the A-A structure at different stages of the fully enclosed gate device structure according to an embodiment of the present invention.
  • the manufacturing method of the transistor according to the first embodiment of the present invention includes the following steps:
  • Step 1 As shown in FIG. 3(A), a base is provided, and the base includes a bottom substrate 101, an insulating layer 102, and a top substrate 103 in order from bottom to top;
  • the substrate is an SOI substrate.
  • the formation method of the SOI substrate includes: in the first step, the upper surface of the underlying substrate 101 is thermally oxidized in a room temperature environment to form a silicon oxide insulating layer, and a certain amount is implanted on the insulating layer 102 Dose of hydrogen ions; in the second step, under normal temperature conditions, the bottom substrate 101 is bonded to the top substrate 103; in the third step, the low temperature annealing causes hydrogen ions to be implanted to form bubbles to peel off part of the top substrate 103 above the insulating layer 102, Then the high temperature annealing enhances the bonding strength between the unstripped top substrate 103 and the bottom substrate 101; in the fourth step, the surface of the unstripped top substrate 103 is planarized.
  • a stress initiation region is formed in the underlying substrate 101 under the insulating layer 102 by means of ion implantation and annealing stripping.
  • the stress initiation region provides favorable stress for manufacturing the channel region of the semiconductor device in the top substrate 103 and helps To improve the performance of semiconductor devices.
  • the stress inducing region is formed in the underlying substrate 101 and extends into the top substrate 103, and the upper plane of the stress inducing region is not higher than the lower plane of the insulating layer 102.
  • a SiN dielectric layer is formed as a mask material on the oxide layer of the top substrate 103, and the pattern is transferred to the SiN dielectric layer using photolithography technology, which is used to line the top layer.
  • a patterned mask layer 105 is formed on the bottom 103 surface.
  • the material of the insulating layer 102 is crystalline or amorphous oxide, nitride, or any combination thereof, and SiO2 is generally selected.
  • the material of the top substrate 103 and the bottom substrate 101 is single crystal silicon, Ge, or a group III-V compound (such as SiC, gallium arsenide, indium arsenide, or indium phosphide, etc.).
  • step 2 forming a source region 302 and a drain region 303 on the top substrate 103, and forming a channel region between the source region 302 and the drain region 303 304, the direction from the source region 302 to the drain region 303 is the first direction X, and the vertical first direction X is the second direction Y.
  • the source region 302, the drain region 303, and the channel region 304 may be formed by photolithography, ion implantation, diffusion, and/or other suitable process methods.
  • a photoresist pattern is formed in the source region, the drain region and the channel region by a photolithography process to cover and define the corresponding source region, and the photoresist pattern is used as an etching mask for etching
  • the silicon layer is exposed, the used photoresist pattern is removed, and then P-type or N-type dopants or impurities are implanted into the source and drain regions of the top substrate 103, and then laser annealing and flash annealing can be used
  • laser annealing and flash annealing can be used
  • Step 3 Referring to the direction of the arrows in FIGS. 2, 3 (A) and 3 (B), in the third direction Z perpendicular to the first direction X and the second direction Y, the channel region 304 is formed through on both sides
  • the hole 201 of the top substrate 103 etches the insulating layer 102 below the hole 201 and the channel region through the hole 201 to form a cavity 202, and the cavity 202 communicates with the hole 201.
  • the method of forming the hole 201 includes: forming a patterned mask layer 105 on the surface of the substrate to define the position of the hole 201; using the patterned mask layer 105 as a mask and etching the substrate to form the hole 201 .
  • the hole 201 is formed by dry etching.
  • the photoresist in the exposed area (the former is called positive photoresist, the latter is called negative photoresist), so that the pattern on the mask is copied to the photoresist film, and the pattern is transferred to the substrate using etching technology
  • a patterned mask layer 105 is formed on the surface of the substrate, and the position of the hole 201 is defined.
  • the patterned mask layer 105 is used as a mask to etch the substrate by using an etchant
  • the hole 201 is formed.
  • the method of forming the cavity 202 includes using the patterned mask layer 105 as a mask and etching the insulating layer 102 to form the cavity 202.
  • the insulating layer 102 is silicon oxide.
  • the etching is wet etching or dry etching.
  • the cavity is etched by a wet etching process, and only the silicon dioxide insulating layer is etched by the HF solution, and the HF solution is injected without etching this characteristic of other materials.
  • the exposed silicon dioxide portion in the hole 201 is etched both laterally and vertically of the insulating layer 102, thereby forming a cavity 202 under the channel region, using a solution with a concentration of 10% -20%, the etching rate is 1000 ⁇ /min.
  • Step 4 Referring to FIG. 2 and FIG. 3(C), a gate structure is formed, and the gate structure covers the upper surface of the channel region 304.
  • the holes 201 on both sides of the channel region 304 and the cavity 202 below expose the walls on both sides and the lower part of the channel region 304, so that a fully enclosed gate structure can be formed on both sides and the upper and lower surfaces of the channel region 304.
  • the pole structure includes a gate dielectric layer 203 and a gate 305 covering the gate dielectric layer 203.
  • the method of forming the gate 305 includes: forming a gate electrode layer 205 on the surface of the gate dielectric layer 203; patterning the gate electrode layer 205 to form the gate 305.
  • the gate dielectric layer 203 includes an oxide layer.
  • an oxide layer is formed as the gate dielectric layer 203 through thermal oxidation or atomic layer deposition.
  • forming a fully enclosed gate structure on both sides and upper and lower surfaces of the channel region 304 includes: thermally growing methods on both sides and upper and lower sides of the channel region 304 An oxide layer is formed on the surface.
  • silicon oxide is formed on both sides and upper and lower surfaces of the channel region 304 by thermal growth method, and silicon oxide is used as the gate dielectric layer 203. Because of the existence of the hole 201 and the cavity 202, the channel region 304 is an exposed region.
  • the oxide layer can be oxidized on both sides and the upper and lower surfaces of the channel region 304, and the thickness of the oxide layer is between 1 nm and 10 nm between.
  • an oxide layer with a high-k gate dielectric can also be formed by atomic layer deposition.
  • the high-k gate dielectric can ensure the proportional relationship of various electrical parameters while The physical thickness of the gate dielectric layer 203 is increased, thereby reducing gate leakage current and improving device reliability.
  • polysilicon is deposited on the surface of the gate dielectric layer 203 to form the gate electrode layer 205.
  • a layer of polysilicon can be deposited on the side of the hole 201 and the cavity 202 by vapor deposition, and polysilicon can be deposited on the surface of the channel region 304.
  • a metal gate can be deposited on the side of the hole 201 and the side of the cavity 202 by atomic layer deposition.
  • the metal gate can form the gate electrode contact region without in-situ doping.
  • the thickness of the polysilicon layer is 2.5k ⁇ 3k ⁇ .
  • Step 5 further comprising: when the gate material is polysilicon, doping the gate electrode layer 205 in situ to form a gate electrode contact region.
  • annealing may be performed to control the doping distribution of the gate electrode layer 205 for adjusting the turn-on voltage of the device.
  • the semiconductor structure may be annealed using an instant annealing process, such as laser annealing at a high temperature of about 800 to 1100° C.
  • the annealing may also repair the implantation process to the top substrate 103 , Damage to the insulating layer 102 and the underlying substrate 101.
  • Step 6 further comprising: metalizing the top surface of the gate 305 to generate metal silicide.
  • metal silicide is generated by performing a metallization reaction at the gate electrode contact region, so as to reduce the resistance of the device.
  • the metallization reaction first uses methods such as physical sputtering to deposit the metal on the wafer, then undergoes a first annealing at a slightly lower temperature (600-700°C), and then undergoes a second annealing at a slightly higher temperature (800-900°C) )
  • the metal Cu, Ti, Co, NiPt, etc.
  • Step 7 Referring to FIG. 3(D), after forming the gate structure, the method further includes: filling the insulating material 204 in the hole 201.
  • PVD or CVD deposition method may be used to deposit silicon oxide, silicon nitride insulating material 204 and the like in the hole 201.
  • Step 9 As shown in FIGS. 2, 3 (D) and 3 (E), remove the gate electrode layer 205 outside the boundary of the channel region 304 and the insulating material 204 deposited on its surface, and remove the deposit on the gate The insulating material 204 on the top of 305 exposes the gate 305.
  • the excess gate electrode layer 205 outside the boundary of the channel region 304 and the insulating material deposited on the surface are removed by the etching process 204.
  • the insulating material 204 deposited on the top of the gate 305 is etched away to expose the gate 305.
  • the device structure of the fully enclosed gate according to the second embodiment of the present invention includes:
  • the hole 201 of the substrate 103; the cavity 202 formed below the channel region 304, the hole 201 is in communication with the cavity 202; the upper surface of the channel region 304, the hole 201 and the cavity 202 are close to the wall surface of the channel region 304 Gate structure.
  • the gate structure includes a gate dielectric layer 203 and a gate 305 covering the gate dielectric layer 203.
  • the material of the gate 305 is polysilicon.
  • the method further includes: a metal silicide formed on the top surface of the gate 305.
  • the hole 201 is filled with an insulating material.
  • the control capability of the gate to the channel is increased, the breakdown voltage is increased, and the current Ids is increased, which simplifies the growth process of the gate insulating layer of the MOS transistor and facilitates mass production.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

一种晶体管的制作方法及全包围栅极的器件结构，该方法包括：提供基底，基底由下至上依次包括底层衬底、绝缘层和顶层衬底；在顶层衬底形成源极区和漏极区，在源极区和漏极区之间形成沟道区，源极区至漏极区的方向为第一方向，垂直第一方向为第二方向；在第二方向上，沟道区两侧形成贯穿顶层衬底的孔；通过孔刻蚀孔下方及沟道区下方的绝缘层，以形成空腔，空腔与孔连通；形成栅极结构，覆盖所述沟道区上表面、所述孔和所述空腔靠近沟道区的壁面，所述栅极结构包括栅介质层及覆盖所述栅介质层的栅极。在沟道区的两侧及上下表面形成全包围的栅极结构，增加栅极对沟道的控制能力，提高击穿电压，同时提高电流Ids，简化MOS晶体管的栅极绝缘层的生长工艺。

Description

晶体管的制作方法及全包围栅极器件结构 技术领域
本发明涉及半导体技术领域，更具体地，涉及一种晶体管的制作方法及全包围栅极器件结构。
 背景技术
MOS晶体管的沟道可以有高的击穿电压，并且有高的电流Ids。如果提高沟道长度，可以提高击穿电压，但是会降低电流Ids。
 技术问题
为了克服这一矛盾，现有技术中采用首先在沟道区的上表面生成上栅介质和上栅电极，之后在沟道区的下表面生成背栅介质和背栅电极，该结构被称为双栅电极结构，需要生长两次栅介质层，制造工艺复杂，导致产能较底，不利于器件的大批量生产。
因此，有必要提供一种制造工艺简单、便于大批量生产的基于SOI基底的全包围栅极器件结构及其制作方法。
 技术解决方案
本发明的目的是进一步简化MOS晶体管的栅介质层生长工艺，同时保证沟道可以有高的击穿电压，并且有高的电流Ids。
为了实现上述目的，提出一种晶体管的制作方法，包括如下步骤：
提供基底，所述基底由下至上依次包括底层衬底、绝缘层和顶层衬底；
在所述顶层衬底形成源极区和漏极区，在所述源极区和漏极区之间形成沟道区，所述源极区至漏极区的方向为第一方向，垂直所述第一方向为第二方向；
在垂直于所述第一方向和所述第二方向的第三方向上，所述沟道区两侧形成贯穿所述顶层衬底的孔；
通过所述孔刻蚀所述孔下方及所述沟道区下方的绝缘层，以形成空腔，所述空腔与所述孔连通；
形成栅极结构，覆盖所述沟道区上表面、所述孔和所述空腔靠近沟道区的壁面，所述栅极结构包括栅介质层及覆盖所述栅介质层的栅极。
可选地，形成所述孔的方法包括：
在所述基底表面形成图形化的掩模层，定义出所述孔的位置；
以所述图形化的掩模层为掩模，刻蚀所述基底以形成所述孔。
可选地，所述形成空腔的方法包括：
可选地，以所述图形化的掩模层为掩模，刻蚀所述绝缘层以形成所述空腔。
可选地，所述刻蚀包括湿法刻蚀或干法刻蚀。
可选地，所述绝缘层为氧化硅。
可选地，所述湿法刻蚀使用的溶液为浓度为10%-20%的HF。
可选地，所述栅介质层包括氧化层。
可选地，通过热氧化或原子层沉积，形成所述氧化层。
可选地，所述栅极的形成方法包括：
在所述栅介质层表面形成栅极电极层；
图形化所述栅极电极层，形成所述栅极。
可选地，所述栅极的材料为多晶硅或金属。
可选地，还包括，当所述栅极的材料为多晶硅时，对所述栅极电极层进行原位掺杂。
可选地，还包括：对所述栅极的顶面进行金属化生成金属硅化物。
可选地，形成所述栅极结构后，还包括：在所述孔内填充绝缘材料。
根据本发明的另一方面，提出一种全包围栅极的器件结构，包括：
形成在基底的顶层衬底中的源极区、漏极区以及在所述源极区、漏极区之间的沟道区；
形成在沟道区两侧的贯穿所述顶层衬底的孔；
形成在所述沟道区下方的空腔，所述孔与所述空腔连通；
形成在所述沟道区上表面、所述孔和所述空腔靠近沟道区的壁面的栅极结构。
可选地，所述栅极结构包括栅介质层及覆盖所述栅介质层的栅极。
可选地，所述栅极的材料为多晶硅或金属。
可选地，还包括：形成在所述栅极顶面的金属硅化物。
可选地，所述孔内填充有绝缘材料。
 有益效果
本发明的有益效果在于：在SOI的硅顶层的沟道区两侧形成孔，在沟道区下方形成与孔相通的空腔，在沟道区的上下表面和两侧形成全包围的栅极结构，通过全包围的栅极结构，增加栅极对沟道的控制能力，提高击穿电压，同时提高电流Ids，简化MOS晶体管的栅极绝缘层的生长工艺，便于大批量生产。
本发明具有其它的特性和优点，这些特性和优点从并入本文中的附图和随后的具体实施方式中将是显而易见的，或者将在并入本文中的附图和随后的具体实施方式中进行详细陈述，这些附图和具体实施方式共同用于解释本发明的特定原理。
 附图说明
通过结合附图对本发明示例性实施例进行更详细的描述，本发明的上述以及其它目的、特征和优势将变得更加明显，其中，在本发明示例性实施例中，相同的附图标记通常代表相同部件。
图1根据本发明的一个实施例的晶体管的制作方法的流程图。
图2根据本发明的一个实施例的全包围栅极器件结构的俯视图。
图3（A）~图3（E）分别是根据本发明的一个实施例的全包围栅极器件结构的A-A向不同阶段的结构示意图。
 本发明的实施方式
下面将参照附图更详细地描述本发明。虽然附图中显示了本发明的优选实施例，然而应该理解，可以以各种形式实现本发明而不应被这里阐述的实施例所限制。相反，提供这些实施例是为了使本发明更加透彻和完整，并且能够将本发明的范围完整地传达给本领域的技术人员。
如图1所示，根据本发明第一实施例的晶体管的制作方法，该制作方法包括如下步骤：
步骤1：参见图3（A）所示，提供基底，基底由下至上依次包括底层衬底101、绝缘层102和顶层衬底103；
具体地，基底为SOI基底，SOI基底的形成方法包括：第一步，在室温的环境下对底层衬底101的上表面进行热氧化，形成氧化硅绝缘层，并在绝缘层102上注入一定剂量的氢离子；第二步，常温条件下，底层衬底101与顶层衬底103键合；第三步，低温退火使注入氢离子形成气泡使绝缘层102上部的部分顶层衬底103剥离，然后高温退火增强未剥离的顶层衬底103和底层衬底101之间的键合力度；第四步，对未剥离的顶层衬底103表面进行平坦化处理。
通过离子注入和退火剥离的方式在绝缘层102之下的底层衬底101中形成应力引发区，该应力引发区为在顶层衬底103中制造半导体器件的沟道区提供了有利应力，有助于提升半导体器件的性能。应力引发区形成在底层衬底101内，并延伸至顶层衬底103内，应力引发区的上平面不高于绝缘层102的下平面。
作为一个示例，参见图3（A）所示，在顶层衬底103的氧化层上形成作为掩膜材料的SiN介质层，利用光刻技术将图形转移到SiN介质层上，用于在顶层衬底103表面形成图形化的掩模层105。
作为一个示例，绝缘层102的材料为晶体或者非晶体氧化物、氮化物或其任意组合，通常选用SiO2。
作为一个示例，顶层衬底103和底层衬底101的材料为单晶硅、Ge 或Ⅲ - Ⅴ族化合物（如SiC、砷化镓、砷化铟或磷化铟等）。
参考图2和图3（A）中箭头方向所示，步骤2：在顶层衬底103形成源极区302和漏极区303，在源极区302和漏极区303之间形成沟道区304，源极区302至漏极区303的方向为第一方向X，垂直第一方向X为第二方向Y。
具体地，源极区302、漏极区303和沟道区304，可以由光刻、离子注入、扩散和/ 或其他合适工艺的方法形成。
可选地，通过光刻工艺在源极区、漏极区和沟道区形成光刻胶图样，以盖住和限定相应的源极区域，使用光刻胶图样作为刻蚀掩膜进行刻蚀露出硅层，移除已用过的光刻胶图样，再向顶层衬底103中的源极区和漏极区注入P 型或N 型掺杂物或杂质，然后可以采用激光退火、闪光退火等工艺，以激活源/ 漏延伸区中的掺杂，现有技术中有多种工艺方法可供选择用于形成源极区、漏极区和沟道区。
步骤3：参见图2、图3（A）和3（B）中箭头方向所示，在垂直于第一方向X和第二方向Y的第三方向Z上，沟道区304两侧形成贯穿顶层衬底103的孔201，通过孔201刻蚀孔201下方及沟道区下方的绝缘层102，以形成空腔202，空腔202与孔201连通。
作为可选方案，形成孔201的方法包括：在基底表面形成图形化的掩模层105，定义出孔201的位置；以图形化的掩模层105为掩模，刻蚀基底以形成孔201。
参考图3（A）所示，作为一个示例，通过干法刻蚀形成孔201。首先，在基底表面涂覆一层光刻胶薄膜，利用紫外光通过掩膜版照射到光刻胶薄膜，引起曝光区域的光刻胶发生化学反应；然后，通过显影技术溶解去除曝光区域或未曝光区域的光刻胶（前者称正性光刻胶，后者称负性光刻胶），使掩膜版上的图形被复制到光刻胶薄膜上，利用刻蚀技术将图形转移到基底上，在基底表面形成图形化的掩模层105，并定义出孔201的位置。最后，在掩模层105上定义刻蚀的开口，将要形成开口的部分暴露出来，不需要形成开口的部分保护起来，通过刻蚀剂以图形化的掩模层105为掩模刻蚀基底以形成孔201。
作为可选方案，参考图3（B）所示，形成空腔202的方法包括：以图形化的掩模层105为掩模，刻蚀绝缘层102以形成空腔202。
作为可选方案，绝缘层102为氧化硅。
作为可选方案，刻蚀为湿法刻蚀或干法刻蚀。
作为一个示例，仍然参考图3（B）所示，通过湿法刻蚀工艺刻蚀空腔，利用HF溶液只刻蚀二氧化硅绝缘层，不刻蚀其他材料的这个特性，把HF溶液注入到孔201中，刻蚀孔201中已经暴露的二氧化硅部分，对绝缘层102的横向和纵向都会刻蚀，从而在沟道区下形成空腔202，其使用的溶液为浓度为10%-20%，刻蚀速率为1000Å/min。
步骤4：参见图2和图3（C）所示，形成栅极结构，栅极结构覆盖沟道区304上表面。沟道区304两侧的孔201和下面的空腔202使得沟道区304两侧及下部的壁面露出，从而可以在沟道区304的两侧及上下表面形成全包围的栅极结构，栅极结构包括栅介质层203及覆盖栅介质层203的栅极305。通过全包围的栅极结构，增加栅极305对沟道的控制能力，提高击穿电压，同时提高电流Ids，简化MOS晶体管的栅极绝缘层的生长工艺。
仍然参见图2和图3（C）所示，作为可选方案，栅极305的形成方法包括：在栅介质层203表面形成栅极电极层205；图形化栅极电极层205，形成栅极305。
作为可选方案，栅介质层203包括氧化层。
作为可选方案，通过热氧化或原子层沉积，形成氧化层作为栅介质层203。
作为一个示例，参见图2和图3（C）所示，在沟道区304的两侧及上下表面形成全包围的栅极结构包括：通过热生长法在沟道区304的两侧及上下表面形成氧化层。例如，先利用热生长法在沟道区304的两侧及上下表面氧化形成氧化硅，氧化硅作为栅介质层203。因为孔201和空腔202的存在，沟道区304为暴露区域，通过一次热生长，即可在沟道区304的两侧及上下表面氧化形成氧化层，氧化层的厚度在1nm~10nm之间。
在一个示例中，参见图3（C）所示，还可以通过原子层沉积的方式，形成具有高k栅介质的氧化层，通过高k栅介质可以在保证各项电参数比例关系的同时，增大栅介质层203的物理厚度，从而降低栅漏电流、提高器件可靠性。
在一个示例中，参见图2和图3（C）所示，在栅介质层203的表面沉积多晶硅，形成栅极电极层205。例如，通过气相沉积可以在孔201的侧面及空腔202的侧面沉积一层多晶硅，以及在沟道区304上表面沉积多晶硅。
在一个示例中，可以通过原子层沉积在孔201的侧面及空腔202的侧面沉积金属栅极，金属栅极不需要进行原位掺杂即可形成栅极电极接触区。
作为可选方案，多晶硅层的厚度2.5kÅ~3kÅ。
步骤5：还包括：当栅极材料为多晶硅时，对栅极电极层205进行原位掺杂，形成栅极电极接触区。
具体地，参见图3（C）所示，在栅极电极层205形成之后，可以进行退火以控制栅极电极层205的掺杂分布，用于调节器件的开启电压。
在一个实施中，参见图3（C）所示，可以采用瞬间退火工艺对半导体结构进行退火，例如在大约800~1100℃的高温下进行激光退火，退火还可以修复注入工艺对顶层衬底103、绝缘层102和底层衬底101的损伤。
步骤6：还包括：对栅极305的顶面进行金属化生成金属硅化物。
具体地，通过在栅极电极接触区进行金属化反应生成金属硅化物，以便于减少该器件的电阻。
金属化反应首先采用诸如物理溅射等方法将金属沉积在晶片上，然后经过稍低温度的第一次退火（600～700℃），再经过温度稍高的第二次退火（800～900℃）使金属（Cu、Ti、Co和NiPt等）与直接接触的有源区和多晶硅栅的硅反应形成金属硅化物，减少栅极电极的接触电阻。
步骤7：参见图3（D）所示，形成栅极结构后，还包括：在孔201内填充绝缘材料204。
具体地，可以利用PVD或CVD沉积法在孔201中沉积氧化硅、氮化硅绝缘材料204等。
步骤9：参见图2、图3（D）和图3（E）所示，去掉沟道区304边界外部的栅极电极层205和沉积于其表面的绝缘材料204，以及去掉沉积于栅极305顶部的绝缘材料204，露出栅极305。
作为一个示例，参见图2、图3（D）和图3（E）所示，通过刻蚀的工艺将掉沟道区304边界外部多余的栅极电极层205和沉积于其表面的绝缘材料204，同时将沉积于栅极305上部的绝缘材料204刻蚀掉，露出栅极305。
参见图2至和图3（E）所示，根据本发明第二实施例的全包围栅极的器件结构，包括：
形成在基底301的顶层衬底103中的源极区302、漏极区303以及在源极区302、漏极区303之间的沟道区304；形成在沟道区304两侧的贯穿顶层衬底103的孔201；形成在沟道区304下方的空腔202，孔201与空腔202连通；形成在沟道区304上表面、孔201和空腔202靠近沟道区304的壁面的栅极结构。
作为可选方案，栅极结构包括栅介质层203及覆盖栅介质层203的栅极305，栅极305的材料为多晶硅。
作为可选方案，还包括：形成在栅极305顶面的金属硅化物。
作为可选方案，孔201内填充有绝缘材料。
通过全包围的栅极结构，增加栅极对沟道的控制能力，提高击穿电压，同时提高电流Ids，简化MOS晶体管的栅极绝缘层的生长工艺，便于大批量生产。
以上已经描述了本发明的各实施例，上述说明是示例性的，并非穷尽性的，并且也不限于所披露的各实施例。在不偏离所说明的各实施例的范围和精神的情况下，对于本技术领域的普通技术人员来说许多修改和变更都是显而易见的。

Claims (18)

  1. 一种晶体管的制作方法，其特征在于，包括：
    提供基底，所述基底由下至上依次包括底层衬底、绝缘层和顶层衬底；
    在所述顶层衬底形成源极区和漏极区，在所述源极区和漏极区之间形成沟道区，所述源极区至漏极区的方向为第一方向，垂直所述第一方向为第二方向；
    在垂直于所述第一方向和所述第二方向的第三方向上，所述沟道区两侧形成贯穿所述顶层衬底的孔；
    通过所述孔刻蚀所述孔下方及所述沟道区下方的绝缘层，以形成空腔，所述空腔与所述孔连通；
    形成栅极结构，覆盖所述沟道区上表面、所述孔和所述空腔靠近沟道区的壁面，所述栅极结构包括栅介质层及覆盖所述栅介质层的栅极。
     
  2. 根据权利要求1所述的晶体管的制作方法，其特征在于，形成所述孔的方法包括：
    在所述基底表面形成图形化的掩模层，定义出所述孔的位置；
    以所述图形化的掩模层为掩模，刻蚀所述基底以形成所述孔。
     
  3. 根据权利要求2所述的晶体管的制作方法，其特征在于，所述形成空腔的方法包括：
    以所述图形化的掩模层为掩模，刻蚀所述绝缘层以形成所述空腔。
     
  4. 根据权利要求3所述的晶体管的制作方法，其特征在于，所述刻蚀包括湿法刻蚀或干法刻蚀。
     
  5. 根据权利要求3所述的晶体管的制作方法，其特征在于，所述绝缘层为氧化硅。
     
  6. 根据权利要求4所述的晶体管的制作方法，其特征在于，所述湿法刻蚀使用的溶液为浓度为10%-20%的HF。
     
  7. 根据权利要求1所述的晶体管的制作方法，其特征在于，所述栅介质层包括氧化层。
     
  8. 根据权利要求7所述的晶体管的制作方法，其特征在于，通过热氧化或原子层沉积，形成所述氧化层。
     
  9. 根据权利要求1所述的晶体管的制作方法，其特征在于，所述栅极的形成方法包括：
    在所述栅介质层表面形成栅极电极层；
    图形化所述栅极电极层，形成所述栅极。
     
  10. 根据权利要求9所述的晶体管的制作方法，其特征在于，所述栅极的材料为多晶硅或金属。
     
  11. 根据权利要求10所述的晶体管的制作方法，其特征在于，还包括，当所述栅极的材料为多晶硅时，对所述栅极电极层进行原位掺杂。
     
  12. 根据权利要求9所述的晶体管的制作方法，其特征在于，还包括：对所述栅极的顶面进行金属化生成金属硅化物。
     
  13. 根据权利要求1所述的晶体管的制作方法，其特征在于，形成所述栅极结构后，还包括：在所述孔内填充绝缘材料。
     
  14. 一种全包围栅极器件结构，其特征在于，包括：
    形成在基底的顶层衬底中的源极区、漏极区以及在所述源极区、漏极区之间的沟道区；
    形成在沟道区两侧的贯穿所述顶层衬底的孔；
    形成在所述沟道区下方的空腔，所述孔与所述空腔连通；
    形成在所述沟道区上表面、所述孔和所述空腔靠近沟道区的壁面的栅极结构。
     
  15. 根据权利要求14所述的全包围栅极器件结构，其特征在于，所述栅极结构包括栅介质层及覆盖所述栅介质层的栅极。
     
  16. 根据权利要求15所述的全包围栅极器件结构，其特征在于，所述栅极的材料为多晶硅或金属。
     
  17. 根据权利要求15所述的全包围栅极器件结构，其特征在于，还包括：形成在所述栅极顶面的金属硅化物。
     
  18. 根据权利要求14所述的全包围栅极器件结构，其特征在于，所述孔内填充有绝缘材料。
PCT/CN2019/117797 2018-12-26 2019-11-13 晶体管的制作方法及全包围栅极器件结构 WO2020134669A1 (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2021515587A JP2022500879A (ja) 2018-12-26 2019-11-13 トランジスタの製造方法及びゲートオールアラウンドデバイス構造
KR1020217014546A KR20210075164A (ko) 2018-12-26 2019-11-13 트랜지스터 제조 방법 및 게이트 올 어라운드 디바이스 구조
US17/210,917 US20210234035A1 (en) 2018-12-26 2021-03-24 Transistor manufacturing method and gate-all-around device structure

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811602315.8 2018-12-26
CN201811602315.8A CN111370306B (zh) 2018-12-26 2018-12-26 晶体管的制作方法及全包围栅极器件结构

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US17/210,917 Continuation US20210234035A1 (en) 2018-12-26 2021-03-24 Transistor manufacturing method and gate-all-around device structure

Publications (1)

Publication Number Publication Date
WO2020134669A1 true WO2020134669A1 (zh) 2020-07-02

Family

ID=71127410

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2019/117797 WO2020134669A1 (zh) 2018-12-26 2019-11-13 晶体管的制作方法及全包围栅极器件结构

Country Status (5)

Country Link
US (1) US20210234035A1 (zh)
JP (1) JP2022500879A (zh)
KR (1) KR20210075164A (zh)
CN (1) CN111370306B (zh)
WO (1) WO2020134669A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116779653A (zh) * 2023-08-21 2023-09-19 合肥晶合集成电路股份有限公司 一种半导体存储器件及其制作方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113471213B (zh) * 2021-07-02 2022-11-08 上海集成电路材料研究院有限公司 基于内嵌空腔soi衬底的多栅mos器件及其制备方法
CN114420566B (zh) * 2022-03-31 2022-05-31 广州粤芯半导体技术有限公司 一种全包围栅器件及其制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5482877A (en) * 1993-02-17 1996-01-09 Samsung Electronics Co., Ltd. Method for making a semiconductor device having a silicon-on-insulator structure
CN102422401A (zh) * 2009-05-20 2012-04-18 国际商业机器公司 用保形氮化物形成耐用由上至下硅纳米线结构的方法和该结构
CN105702618A (zh) * 2014-11-26 2016-06-22 中国科学院微电子研究所 一种半导体器件及其制造方法
CN106575669A (zh) * 2014-09-09 2017-04-19 英特尔公司 多栅极高电子迁移率晶体管及其制造方法
CN107039511A (zh) * 2015-10-20 2017-08-11 格罗方德半导体公司 外延再生长异质结构纳米线的横向隧道场效应晶体管

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4943576B2 (ja) * 2000-10-19 2012-05-30 白土 猛英 Ｍｉｓ電界効果トランジスタ及びその製造方法
US9343142B2 (en) * 2012-01-05 2016-05-17 Globalfoundries Inc. Nanowire floating gate transistor
KR101462430B1 (ko) * 2013-07-18 2014-11-18 경북대학교 산학협력단 반도체 소자의 제조 방법
CN105489647B (zh) * 2014-09-18 2018-06-01 中国科学院微电子研究所 一种半导体器件及其制造方法
CN104966669A (zh) * 2015-07-22 2015-10-07 上海华力微电子有限公司 一种全包围栅结构的制造方法
US9484264B1 (en) * 2015-07-29 2016-11-01 International Business Machines Corporation Field effect transistor contacts

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5482877A (en) * 1993-02-17 1996-01-09 Samsung Electronics Co., Ltd. Method for making a semiconductor device having a silicon-on-insulator structure
CN102422401A (zh) * 2009-05-20 2012-04-18 国际商业机器公司 用保形氮化物形成耐用由上至下硅纳米线结构的方法和该结构
CN106575669A (zh) * 2014-09-09 2017-04-19 英特尔公司 多栅极高电子迁移率晶体管及其制造方法
CN105702618A (zh) * 2014-11-26 2016-06-22 中国科学院微电子研究所 一种半导体器件及其制造方法
CN107039511A (zh) * 2015-10-20 2017-08-11 格罗方德半导体公司 外延再生长异质结构纳米线的横向隧道场效应晶体管

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116779653A (zh) * 2023-08-21 2023-09-19 合肥晶合集成电路股份有限公司 一种半导体存储器件及其制作方法
CN116779653B (zh) * 2023-08-21 2023-11-28 合肥晶合集成电路股份有限公司 一种半导体存储器件及其制作方法

Also Published As

Publication number Publication date
CN111370306A (zh) 2020-07-03
US20210234035A1 (en) 2021-07-29
KR20210075164A (ko) 2021-06-22
JP2022500879A (ja) 2022-01-04
CN111370306B (zh) 2023-04-28

Similar Documents

Publication Publication Date Title
JP5274594B2 (ja) 自己整合されたデュアル応力層を用いるｃｍｏｓ構造体及び方法
CN100452400C (zh) 沟槽应变抬升源/漏结构及其制造方法
US6087234A (en) Method of forming a self-aligned silicide MOSFET with an extended ultra-shallow S/D junction
TW200536121A (en) Semiconductor device having a laterally modulated gate workfunction and method of fabrication
US20210234035A1 (en) Transistor manufacturing method and gate-all-around device structure
KR20040090063A (ko) 쇼트키 장벽 트랜지스터 및 그 제조방법
TW202009986A (zh) 絕緣層上半導體（soi）基底及其形成的方法
CN107731738A (zh) 半导体结构的形成方法
WO2011088687A1 (zh) 一种隧穿场效应晶体管的制备方法
WO2014015536A1 (zh) 半导体器件制造方法
WO2014063381A1 (zh) Mosfet的制造方法
CN106328694B (zh) 半导体结构的形成方法
KR100597768B1 (ko) 반도체 소자의 게이트 스페이서형성방법
CN104167359A (zh) 半导体器件制造方法
TW201916121A (zh) 半導體裝置的形成方法
TWI229388B (en) Method for fabricating a self-aligned bipolar transistor and related structure
JP3324518B2 (ja) 半導体装置の製造方法
KR100319610B1 (ko) 반도체 소자의 트랜지스터 및 그 제조방법
CN117690974B (zh) 半导体器件、半导体器件的制作方法以及三维存储器
KR100540339B1 (ko) 반도체 제조 공정에 있어서의 게이트 구조 형성 방법
JP3816746B2 (ja) Ｍｏｓ型電界効果トランジスタ及びその製造方法
KR100478479B1 (ko) 모스 트랜지스터 제조 방법
JPS61220372A (ja) 半導体装置の製造方法
JP2002118261A (ja) 半導体装置及びその製造方法
JPH0475349A (ja) 半導体装置の製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19906405

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2021515587

Country of ref document: JP

Kind code of ref document: A

ENP Entry into the national phase

Ref document number: 20217014546

Country of ref document: KR

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 19906405

Country of ref document: EP

Kind code of ref document: A1