WO2020133701A1 - 一种oled显示面板及其制作方法、智能终端 - Google Patents

一种oled显示面板及其制作方法、智能终端 Download PDF

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Publication number
WO2020133701A1
WO2020133701A1 PCT/CN2019/077274 CN2019077274W WO2020133701A1 WO 2020133701 A1 WO2020133701 A1 WO 2020133701A1 CN 2019077274 W CN2019077274 W CN 2019077274W WO 2020133701 A1 WO2020133701 A1 WO 2020133701A1
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Prior art keywords
sub
area
hole
layer
pixel
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English (en)
French (fr)
Inventor
高洪
郑敏
金武谦
赵勇
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/475,381 priority Critical patent/US11289559B2/en
Publication of WO2020133701A1 publication Critical patent/WO2020133701A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the technical field of display panels, in particular to an OLED display panel, a manufacturing method thereof, and an intelligent terminal.
  • the screen ratio of OLED display is getting higher and higher, and the camera assembly of the OLED display in the prior art is set in its camera area, and O-cut and U are required in the camera area -cut design, and O-cut and U-cut design will occupy a certain space, resulting in a wider non-display area of the OLED display, which in turn leads to a smaller OLED display.
  • Embodiments of the present invention provide an OLED display panel, a method for manufacturing the same, and an intelligent terminal, to solve the problem of a low proportion of existing OLED display screens.
  • An embodiment of the present invention provides an OLED display panel, including an electronic component area for placing electronic components and a sub-pixel area correspondingly disposed on the electronic component area, the sub-pixel area includes a plurality of sub-pixels;
  • At least one of the sub-pixels is provided with a first hole, and the first hole is filled with a transparent material.
  • a thin film transistor layer is further provided between the electronic element area and the sub-pixel area;
  • the thin film transistor layer is provided with a second hole corresponding to the electronic element region, and the second hole is filled with the transparent material.
  • the OLED panel further includes a base substrate, the base substrate includes the electronic element area, and the electronic element area is a groove provided on a side of the base substrate away from the sub-pixel area .
  • the orthographic projection of the first hole on the base substrate is located in the groove.
  • the thin film transistor layer includes a buffer layer, an active layer, an interlayer insulating layer, a gate, a gate insulating layer, a source and drain, and a planarization layer that are sequentially arranged on the base substrate;
  • the second hole penetrates the buffer layer, the active layer, the interlayer insulating layer, the gate, the gate insulating layer, the source and drain, and the planarization layer, or The second hole penetrates the active layer, the interlayer insulating layer, the gate, the gate insulating layer, the source and drain, and the planarization layer.
  • the transparent material includes at least one of silicone and transparent polyimide.
  • the OLED display panel further includes a display area provided outside the electronic element area,
  • the pixel density of the sub-pixel area corresponding to the electronic element area is smaller than the pixel density of the display area.
  • an embodiment of the present invention provides a method for manufacturing an OLED display panel, including:
  • An electronic component area and a sub-pixel area are provided correspondingly; the electronic component area is used for placing electronic components, and the sub-pixel area includes a plurality of sub-pixels;
  • a first hole is opened at at least one of the sub-pixels, and a transparent material is filled in the first hole.
  • the method further includes:
  • a thin film transistor layer is provided between the electronic element area and the sub-pixel area;
  • a second hole corresponding to the electronic element region is opened in the thin film transistor layer, and a transparent material is filled in the second hole.
  • the method further includes:
  • a groove is provided on a side of the base substrate away from the sub-pixel area, and the groove is set as the electronic element area; the orthographic projection of the first hole on the base substrate is located at Described within the groove.
  • an embodiment of the present invention provides an intelligent terminal, including an OLED display panel and electronic components;
  • the OLED display panel includes an electronic element area and a sub-pixel area correspondingly disposed on the electronic element area, the sub-pixel area includes a plurality of sub-pixels;
  • At least one of the sub-pixels is provided with a first hole, the first hole is filled with a transparent material; the electronic component is provided in the electronic component area.
  • a thin film transistor layer is further provided between the electronic element area and the sub-pixel area;
  • the thin film transistor layer is provided with a second hole corresponding to the electronic element region, and the second hole is filled with the transparent material.
  • the OLED panel further includes a base substrate, the base substrate includes the electronic element area, and the electronic element area is a groove provided on a side of the base substrate away from the sub-pixel area .
  • the orthographic projection of the first hole on the base substrate is located in the groove.
  • the thin film transistor layer includes a buffer layer, an active layer, an interlayer insulating layer, a gate, a gate insulating layer, a source and drain, and a planarization layer that are sequentially arranged on the base substrate;
  • the second hole penetrates the buffer layer, the active layer, the interlayer insulating layer, the gate, the gate insulating layer, the source and drain, and the planarization layer, or The second hole penetrates the active layer, the interlayer insulating layer, the gate, the gate insulating layer, the source and drain, and the planarization layer.
  • the transparent material includes at least one of silicone and transparent polyimide.
  • the OLED display panel further includes a display area provided outside the electronic element area;
  • the pixel density of the sub-pixel area corresponding to the electronic element area is smaller than the pixel density of the display area.
  • the beneficial effects of the present invention are: in the sub-pixel area corresponding to the electronic element area, at least one sub-pixel is provided with a first hole, and the first hole is filled with a transparent material to reduce pixels in the sub-pixel area corresponding to the electronic element area Density, increase the light transmittance of the electronic component area, while reducing the occupied space of the electronic component area in the non-display area, increasing the proportion of the display screen.
  • FIG. 1 is a distribution diagram of a display area and a cutting area in an OLED display panel provided by an embodiment of the present invention
  • FIG. 2 is a schematic structural diagram of an OLED display panel provided by an embodiment of the present invention.
  • FIG. 3 is a schematic flowchart of a method for manufacturing an OLED display panel provided by an embodiment of the present invention
  • FIG. 4 is a schematic structural diagram of an intelligent terminal provided by an embodiment of the present invention.
  • the OLED display panel includes a display area AA, a sub-pixel area CA, and an electronic element area (not shown in FIG. 1), the display area AA is disposed outside the electronic element area, and the electronic element area and the sub-pixel area The location of CA corresponds.
  • the left side of the boundary line C in FIG. 1 is the display area AA, and the right side of the boundary line C is the sub-pixel area CA.
  • the sub-pixel area CA includes a plurality of sub-pixels 2, at least one of the sub-pixels 2 is provided with a first hole 61, so as to improve the light transmittance of the electronic component area, so as to place electronic components (such as a camera) in the electronic component area.
  • the first hole 61 is filled with a transparent material, and the transparent material may be siloxane or transparent polyimide (CPI).
  • the transparent material may be siloxane or transparent polyimide (CPI).
  • a plurality of sub-pixels 2 are provided in the sub-pixel area CA, and a plurality of sub-pixels 11 are provided in the display area AA.
  • the sub-pixel 2 and the sub-pixel 11 each include a blue sub-pixel B, a red sub-pixel R, a green sub-pixel G, and the like.
  • the pixel density of the sub-pixel 2 in the sub-pixel area CA is the same as the pixel density of the sub-pixel 11 in the display area AA.
  • the pixel density (PPI) refers to the number of sub-pixels per unit area.
  • the sub-pixel 2 in the sub-pixel area CA is reduced, so that the pixel density of the sub-pixel 2 in the sub-pixel area CA is smaller than the display
  • the pixel density of the sub-pixel 11 in the area AA improves the light transmittance of the electronic element area.
  • the dotted area 12 of the display area AA has two red sub-pixels R, four green sub-pixels G, and two blue sub-pixels B.
  • two red sub-pixels R, four green sub-pixels G, and two blue sub-pixels B are also correspondingly provided in the area 22 of the same size in the sub-pixel area CA.
  • the first hole 61 is opened at the two green sub-pixels G, that is, the two green sub-pixels G corresponding to the area 22 are removed, then the sub-pixels in the area 22 become 2 red sub-pixels R, 2 green sub-pixels G and 2 Blue sub-pixels B, so that the pixel density of the sub-pixel 2 in the sub-pixel area CA is smaller than the pixel density of the sub-pixel 11 in the display area AA, so that the light transmittance of the sub-pixel area CA is higher than the light of the display area AA Transmittance, thereby increasing the light transmittance of the electronic element area corresponding to the sub-pixel area CA.
  • the electronic component area is disposed at a position corresponding to the sub-pixel area on the bottom surface of the OLED display panel, so that the electronic component is disposed at a position corresponding to the sub-pixel area on the bottom surface of the OLED display panel, reducing electrons
  • the occupied space of components in the non-display area increases the proportion of the display screen.
  • the OLED panel further includes a base substrate 31, and the material of the base substrate 31 is mainly polyimide (Polyimide, PI).
  • the PI material can be effectively improved Transmittance.
  • a groove 5 is provided on the side of the base substrate 31 away from the sub-pixel area CA, the groove 5 is the electronic component area 5, and the orthographic projection of the first hole 61 on the base substrate 31 is located in the groove 5 .
  • a thin-film transistor layer is further provided between the electronic element area and the sub-pixel area; the thin-film transistor layer is provided with a second hole corresponding to the electronic element area, inside the second hole Filled with the transparent material.
  • the thin film transistor layer is disposed on the side of the base substrate facing the sub-pixel area, and the transparent material filled in the second hole may be siloxane or transparent polyimide.
  • the position of the second hole corresponds to the position of the electronic component area.
  • the size of the second hole may also correspond to the size of the electronic component area.
  • the second hole is filled with a transparent material to further increase the light transmittance of the electronic component area.
  • the thin film transistor layer includes a buffer layer 32, an active layer (not shown in the figure), an inorganic insulating layer 33, a gate (not shown in the figure), an organic insulating layer 34, and a source-drain Pole (not shown in the figure) and the planarization layer 35.
  • the buffer layer 32 is provided on the base substrate 31, and the material of the buffer layer 32 includes any one of silicon nitride, silicon oxide, or silicon oxynitride; the active layer is provided on the buffer layer; and the inorganic insulating layer 33 Disposed on the active layer and the buffer layer 32; the gate is disposed on the inorganic insulating layer 33; the organic insulating layer 34 is disposed on the gate and the inorganic insulating layer 33; the source and drain are disposed on the organic insulating layer 34; the planarization layer 35 Provided on the source and drain electrodes and the organic insulating layer 34, the material of the planarization layer 35 is mainly PI material.
  • the second hole 62 penetrates the active layer, the inorganic insulating layer 33, the gate, the organic insulating layer 34, the source and drain, and the planarization layer 35.
  • the second hole 62 can also penetrate the buffer layer 32, that is, the second hole 62 penetrates the buffer layer 32, the active layer, the inorganic insulating layer 33, the gate, the organic An insulating layer 34, the source and drain, and the planarization layer 35.
  • the OLED display panel further includes an anode (not shown in the figure), a pixel defining layer 36, a light emitting layer 37, and a cathode (not shown in the figure).
  • the anode is provided on the planarization layer 35
  • the pixel defining layer 36 is provided on the anode and the planarization layer 35
  • the material of the pixel defining layer 36 is mainly PI material
  • the light emitting layer 37 is provided on the anode and the pixel defining layer 36
  • the cathode It is provided on the light emitting layer 37 and the pixel defining layer 36.
  • the second hole 62 also penetrates the pixel defining layer 36.
  • the first hole 61 is disposed on the light emitting layer 37. As shown in FIG. 2, the light emitting layer 37 is provided with a plurality of first holes 61, and the orthographic projections of the plurality of first holes 61 are located in the groove 5.
  • the first hole 61 may penetrate the light emitting layer 37 or may not penetrate the light emitting layer 37 completely.
  • the anode and the cathode may be opened or not. When the anode and the cathode are opened, the hole corresponds to the position of the second hole 62.
  • a side of the sub-pixel area CA away from the electronic element area 5 is further provided with a first chemical vapor deposition layer 38, a transparent layer 39, a second chemical vapor deposition layer 40, a touch layer 41, and a polarizer 42 ⁇ 43 ⁇ And cover 43.
  • the transparent material filled in the first hole 61 and the second hole 62 may be the material of the transparent layer.
  • the OLED display panel provided by the embodiment of the present invention, in the sub-pixel area corresponding to the electronic element area, at least one sub-pixel is opened with a first hole, and the first hole is filled with a transparent material to reduce electronic elements
  • the pixel density of the sub-pixel area corresponding to the area improves the light transmittance of the electronic component area, and at the same time reduces the space occupied by the electronic component area in the non-display area and increases the proportion of the display screen.
  • FIG. 3 is a schematic flowchart of a method for manufacturing an OLED display panel according to an embodiment of the present invention. The method may include the following steps:
  • the electronic component area is used for placing electronic components
  • the sub-pixel area includes a plurality of sub-pixels.
  • the OLED display panel includes a display area AA, a sub-pixel area CA, and an electronic component area (not shown in FIG. 1).
  • the display area AA is disposed outside the electronic component area.
  • the position of the sub-pixel area CA corresponds.
  • the left side of the boundary line C in FIG. 1 is the display area AA, and the right side of the boundary line C is the sub-pixel area CA.
  • the sub-pixel area CA includes a plurality of sub-pixels 2.
  • At least one sub-pixel 2 is provided with a first hole 61, thereby improving the light transmittance of the electronic component area, so as to place electronic components in the electronic component area.
  • the transparent material filled in the first hole may be siloxane or transparent polyimide (CPI).
  • a plurality of sub-pixels 2 are provided in the sub-pixel area CA, and a plurality of sub-pixels 11 are provided in the display area AA.
  • the sub-pixel 2 and the sub-pixel 11 each include a blue sub-pixel B, a red sub-pixel R, a green sub-pixel G, and the like.
  • the pixel density of the sub-pixel 2 in the sub-pixel area CA is the same as the pixel density of the sub-pixel 11 in the display area AA.
  • the pixel density (PPI) refers to the number of sub-pixels per unit area.
  • the sub-pixel 2 in the sub-pixel area CA is reduced, so that the pixel density of the sub-pixel 2 in the sub-pixel area CA is smaller than the display
  • the pixel density of the sub-pixel 11 in the area AA improves the light transmittance of the electronic element area.
  • the method further includes:
  • a thin film transistor layer is provided between the electronic element area and the sub-pixel area;
  • a second hole corresponding to the electronic element region is opened in the thin film transistor layer, and a transparent material is filled in the second hole.
  • the transparent material filled in the second hole may be siloxane, transparent polyimide, or the like.
  • the position of the second hole corresponds to the position of the electronic component area.
  • the size of the second hole may also correspond to the size of the electronic component area. Fill the second hole with a transparent material to further increase the light transmittance of the electronic component area.
  • the method further includes:
  • a groove is provided on a side of the base substrate away from the sub-pixel area, and the groove is set as the electronic element area; the orthographic projection of the first hole on the base substrate is located at Described within the groove.
  • the electronic component area is disposed at a position corresponding to the sub-pixel area on the bottom surface of the OLED display panel, so that the electronic component is disposed at a position corresponding to the sub-pixel area on the bottom surface of the OLED display panel, reducing electrons
  • the occupied space of components in the non-display area increases the proportion of the display screen.
  • the OLED panel further includes a base substrate 31, and the material of the base substrate 31 is mainly polyimide (Polyimide, PI).
  • the PI material can be effectively improved Transmittance.
  • a groove 5 is provided on the side of the base substrate 31 away from the sub-pixel area CA, the groove 5 is the electronic component area 5, and the orthographic projection of the first hole 61 on the base substrate 31 is located in the groove 5 .
  • the manufacturing method of the OLED display provided in this embodiment, in the sub-pixel area corresponding to the electronic element area, at least one sub-pixel is opened with a first hole, and the first hole is filled with a transparent material to reduce
  • the pixel density of the sub-pixel area corresponding to the electronic component area improves the light transmittance of the electronic component area, and at the same time reduces the space occupied by the electronic component area in the non-display area and increases the proportion of the display screen.
  • the smart terminal includes an electronic component 51 and an OLED display panel 52.
  • the OLED display panel 52 is the OLED panel in the above embodiment, and will not be described in detail here.
  • the electronic component 51 is disposed in the electronic component area 5 on the back of the OLED display panel 52.
  • the electronic component area 5 may be the groove 5 on the back of the OLED display panel 52, that is, the electronic component 51 may be provided on the back of the OLED display panel 52 Of the groove 5.
  • the electronic component 51 may be a sensor unit of the camera.
  • the smart terminal in the sub-pixel area corresponding to the electronic element area, at least one sub-pixel is opened with a first hole, and the first hole is filled with a transparent material to reduce the electronic element area
  • the pixel density of the corresponding sub-pixel area improves the light transmittance of the electronic component area, and at the same time reduces the space occupied by the electronic component area in the non-display area and increases the proportion of the display screen.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

本发明提供一种OLED显示面板及其制作方法、智能终端，所述OLED显示面板包括用于放置电子元件的电子元件区以及对应设置在所述电子元件区上的子像素区，所述子像素区包括多个子像素；至少一个所述子像素开设有第一孔，所述第一孔内填充有透明材料，从而增加显示屏占比。

Description

一种OLED显示面板及其制作方法、智能终端 技术领域
本发明涉及显示面板技术领域，尤其涉及一种OLED显示面板及其制作方法、智能终端。
 背景技术
随着全面屏技术的发展，对OLED显示屏的屏占比要求越来越高，而现有技术中的OLED显示屏的摄像头组件设置在其摄像头区域，需要在摄像头区域进行O-cut和U-cut的设计，而O-cut和U-cut的设计会占用一定的空间，导致OLED显示屏的非显示区域较宽，进而导致OLED显示屏占比较小。
 技术问题
本发明实施例提供一种OLED显示面板及其制作方法、智能终端，以解决现有OLED显示屏占比低的问题。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明实施例提供了一种OLED显示面板，包括用于放置电子元件的电子元件区以及对应设置在所述电子元件区上的子像素区，所述子像素区包括多个子像素；
至少一个所述子像素开设有第一孔，所述第一孔内填充有透明材料。
进一步地，所述电子元件区与所述子像素区之间还设有薄膜晶体管层；
所述薄膜晶体管层上设有与所述电子元件区相对应的第二孔，所述第二孔内填充有所述透明材料。
进一步地，所述OLED面板还包括衬底基板，所述衬底基板包括所述电子元件区，所述电子元件区是设于所述衬底基板远离所述子像素区的一侧的凹槽。
进一步地，所述第一孔在所述衬底基板上的正投影位于所述凹槽内。
进一步地，所述薄膜晶体管层包括依次设置在所述衬底基板上的缓冲层、有源层、层间绝缘层、栅极、栅极绝缘层、源漏极和平坦化层；
所述第二孔贯穿所述缓冲层、所述有源层、所述层间绝缘层、所述栅极、所述栅极绝缘层、所述源漏极和所述平坦化层，或者所述第二孔贯穿所述有源层、所述层间绝缘层、所述栅极、所述栅极绝缘层、所述源漏极和所述平坦化层。
进一步地，所述透明材料包括硅氧烷和透明聚酰亚胺中的至少一种。
进一步地，所述OLED显示面板还包括设置在所述电子元件区外的显示区，
对应设置在所述电子元件区上的子像素区的像素密度小于所述显示区的像素密度。
相应地，本发明实施例提供了一种OLED显示面板的制作方法，包括：
对应设置电子元件区和子像素区；所述电子元件区用于放置电子元件，所述子像素区包括多个子像素；
在至少一个所述子像素处开设第一孔，并在所述第一孔内填充透明材料。
进一步地，所述方法还包括：
在所述电子元件区和所述子像素区之间设置薄膜晶体管层；
在所述薄膜晶体管层上开设与所述电子元件区相对应的第二孔，并在所述第二孔内填充透明材料。
进一步地，所述方法还包括：
提供衬底基板；
在所述衬底基板远离所述子像素区的一侧设置凹槽，并将所述凹槽设为所述电子元件区；所述第一孔在所述衬底基板上的正投影位于所述凹槽内。
相应地，本发明实施例提供了一种智能终端，包括OLED显示面板和电子元件；
所述OLED显示面板包括电子元件区以及对应设置在所述电子元件区上的子像素区，所述子像素区包括多个子像素；
至少一个所述子像素开设有第一孔，所述第一孔内填充有透明材料；所述电子元件设于所述电子元件区内。
进一步地，所述电子元件区与所述子像素区之间还设有薄膜晶体管层；
所述薄膜晶体管层上设有与所述电子元件区相对应的第二孔，所述第二孔内填充有所述透明材料。
进一步地，所述OLED面板还包括衬底基板，所述衬底基板包括所述电子元件区，所述电子元件区是设于所述衬底基板远离所述子像素区的一侧的凹槽。
进一步地，所述第一孔在所述衬底基板上的正投影位于所述凹槽内。
进一步地，所述薄膜晶体管层包括依次设置在所述衬底基板上的缓冲层、有源层、层间绝缘层、栅极、栅极绝缘层、源漏极和平坦化层；
所述第二孔贯穿所述缓冲层、所述有源层、所述层间绝缘层、所述栅极、所述栅极绝缘层、所述源漏极和所述平坦化层，或者所述第二孔贯穿所述有源层、所述层间绝缘层、所述栅极、所述栅极绝缘层、所述源漏极和所述平坦化层。
进一步地，所述透明材料包括硅氧烷和透明聚酰亚胺中的至少一种。
进一步地，所述OLED显示面板还包括设置在所述电子元件区外的显示区；
对应设置在所述电子元件区上的子像素区的像素密度小于所述显示区的像素密度。
 有益效果
本发明的有益效果为：与电子元件区对应设置的子像素区中，至少一个子像素开设有第一孔，且第一孔内填充透明材料，减小电子元件区对应的子像素区的像素密度，提高电子元件区的光透率，同时减小电子元件区在非显示区的占用空间，增加显示屏占比。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例提供的OLED显示面板中的显示区和切割区的分布图；
图2为本发明实施例提供的OLED显示面板的结构示意图；
图3为本发明实施例提供的OLED显示面板的制作方法的流程示意图；
图4为本发明实施例提供的智能终端的结构示意图。
 本发明的实施方式
以下参考说明书附图介绍本发明的优选实施例，用以举例证明本发明可以实施，这些实施例可以向本领域中的技术人员完整介绍本发明的技术内容，使得本发明的技术内容更加清楚和便于理解。然而本发明可以通过许多不同形式的实施例来得以体现，本发明的保护范围并非仅限于文中提到的实施例。
本发明说明书中使用的术语仅用来描述特定实施方式，而并不意图显示本发明的概念。除非上下文中有明确不同的意义，否则，以单数形式使用的表达涵盖复数形式的表达。在本发明说明书中，应理解，诸如“包括”、“具有”以及“含有”等术语意图说明存在本发明说明书中揭示的特征、数字、步骤、动作或其组合的可能性，而并不意图排除可存在或可添加一个或多个其他特征、数字、步骤、动作或其组合的可能性。附图中的相同参考标号指代相同部分。
如图1所示，所述OLED显示面板包括显示区AA、子像素区CA和电子元件区（图1中未示出），显示区AA设置在电子元件区外，电子元件区与子像素区CA的位置相对应。图1中的分界线C的左侧为显示区域AA，分界线C的右侧为子像素区CA。
子像素区CA包括多个子像素2，至少一个子像素2开设有第一孔61，从而提高电子元件区的透光率，以便在电子元件区放置电子元件（如摄像头）。
进一步地，所述第一孔61内填充有透明材料，透明材料可以为硅氧烷（siloxane）或透明聚酰亚胺(Colorless Polyimide，CPI)等。通过在第一孔内填充透明材料，提高电子元件区的感光性能，在电子元件为摄像头时，提高摄像头的拍摄效果。
如图1所示，子像素区CA中设有多个子像素2，显示区AA中设有多个子像素11。子像素2和子像素11均包括蓝色子像素B、红色子像素R或绿色子像素G等。在子像素区CA开孔之前，子像素区CA中的子像素2的像素密度与显示区AA中的子像素11的像素密度相同。其中，像素密度（PPI）是指单位面积内的子像素的数量。通过在子像素区CA中的至少一个子像素2处开设第一孔61，使得子像素区CA中的子像素2减少，从而使得子像素区CA中的子像素2的像素密度小于所述显示区AA中的子像素11的像素密度，提高电子元件区的光透率。
例如，显示区AA的虚线区域12内具有2个红色子像素R、4个绿色子像素G和2个蓝色子像素B。在开设第一孔前，子像素区CA中同样大小的区域22中也对应设置有2个红色子像素R、4个绿色子像素G和2个蓝色子像素B，进而在区域22中的2个绿色子像素G处开设第一孔61，即去除区域22对应的2个绿色子像素G，则区域22中的子像素变为2个红色子像素R、2个绿色子像素G和2个蓝色子像素B，从而使子像素区CA中的子像素2的像素密度小于显示区AA内的子像素11的像素密度，使得子像素区CA的光透率高于显示区AA的光透率，进而提高与子像素区CA相对应的电子元件区的光透率。
在一个具体的实施方式中，电子元件区设置于OLED显示面板的底面与子像素区相对应的位置，从而使电子元件设置于OLED显示面板的底面与子像素区相对应的位置，减小电子元件在非显示区域的占用空间，增加显示屏占比。
在另一个具体的实施方式中，如图2所示，所述OLED面板还包括衬底基板31，衬底基板31的材料主要为聚酰亚胺（Polyimide, PI），PI材料可以有效地提高透光度。所述衬底基板31远离子像素区CA的一侧设有凹槽5，凹槽5即为电子元件区5，第一孔61在衬底基板31上的正投影位于所述凹槽5内。通过在衬底基板31上设置凹槽5，以减薄衬底基板31，进一步增加位于衬底基板31底部的电子元件区5的透光率。
进一步地，所述电子元件区与所述子像素区之间还设有薄膜晶体管层；所述薄膜晶体管层上设有与所述电子元件区相对应的第二孔，所述第二孔内填充有所述透明材料。
需要说明的是，薄膜晶体管层设置于衬底基板朝向子像素区的一侧，第二孔内填充的透明材料可以为硅氧烷或透明聚酰亚胺等。第二孔的位置与电子元件区的位置相对应，第二孔的大小也可以与电子元件区的大小相对应，第二孔内填充有透明材料以进一步提高电子元件区的光透率。
具体地，如图2所示，薄膜晶体管层包括缓冲层32、有源层（图中未示出）、无机绝缘层33、栅极（图中未示出）、有机绝缘层34、源漏极（图中未示出）和平坦化层35。其中，缓冲层32设置在衬底基板31上，缓冲层32的材料包括氮化硅、氧化硅或氮氧化硅中的任意一种；有源层设置在所述缓冲层上；无机绝缘层33设置在有源层和缓冲层32；栅极设置于无机绝缘层33上；有机绝缘层34设置于栅极和无机绝缘层33上；源漏极设置于有机绝缘层34上；平坦化层35设置于源漏极和有机绝缘层34上，平坦化层35的材料主要为PI材料。
如图2所示，第二孔62贯穿所述有源层、所述无机绝缘层33、所述栅极、所述有机绝缘层34、所述源漏极和所述平坦化层35。另外，根据工程需求还可使第二孔62贯穿缓冲层32，即第二孔62贯穿所述缓冲层32、所述有源层、所述无机绝缘层33、所述栅极、所述有机绝缘层34、所述源漏极和所述平坦化层35。
进一步地，所述OLED显示面板还包括阳极（图中未示出）、像素界定层36、发光层37和阴极（图中未示出）。其中，阳极设置在平坦化层35上，像素界定层36设置在阳极和平坦化层35上，像素界定层36的材料主要为PI材料；发光层37设置在阳极和像素界定层36上，阴极设置在发光层37和像素界定层36上。
其中，第二孔62还贯穿像素界定层36。第一孔61设置在发光层37上，如图2所示，发光层37上设有多个第一孔61，且多个第一孔61的正投影位于凹槽5内。第一孔61可贯穿发光层37，也可不完全贯穿发光层37。另外，阳极和阴极上可以开孔，也可以不开孔，在阳极和阴极开孔时，该孔与第二孔62的位置相对应。
进一步地，所述子像素区CA远离所述电子元件区5的一侧还依次设有第一化学气相沉积层38、透明层39、第二化学气相沉积层40、触摸层41、偏光片42和盖板43。
需要说明的是，第一孔61、第二孔62中填充的透明材料可以为透明层的材料。
由上述可知，本发明实施例提供的OLED显示面板，在与电子元件区对应设置的子像素区中，使至少一个子像素开设第一孔，且第一孔内填充透明材料，减小电子元件区对应的子像素区的像素密度，提高电子元件区的光透率，同时减小电子元件区在非显示区的占用空间，增加显示屏占比。
如图3所示，图3是本发明实施例提供的OLED显示面板的制作方法的流程示意图，所述方法可以包括如下步骤：
101、对应设置电子元件区和子像素区；所述电子元件区用于放置电子元件，所述子像素区包括多个子像素。
本实施例中，如图1所示，OLED显示面板包括显示区AA、子像素区CA和电子元件区（图1中未示出），显示区AA设置在电子元件区外，电子元件区与子像素区CA的位置相对应。图1中的分界线C的左侧为显示区域AA，分界线C的右侧为子像素区CA。子像素区CA包括多个子像素2。
102、在至少一个子像素处开设第一孔，并在所述第一孔内填充透明材料。
在本实施例中，至少一个子像素2开设有第一孔61，从而提高电子元件区的透光率，以便在电子元件区放置电子元件。第一孔中填充的透明材料可以为硅氧烷（siloxane）或透明聚酰亚胺(Colorless Polyimide，CPI)等。通过在第一孔内填充透明材料，提高电子元件区的感光性能，在电子元件为摄像头时，提高摄像头的拍摄效果。
如图1所示，子像素区CA中设有多个子像素2，显示区AA中设有多个子像素11。子像素2和子像素11均包括蓝色子像素B、红色子像素R或绿色子像素G等。在子像素区CA开孔之前，子像素区CA中的子像素2的像素密度与显示区AA中的子像素11的像素密度相同。其中，像素密度（PPI）是指单位面积内的子像素的数量。通过在子像素区CA中的至少一个子像素2处开设第一孔61，使得子像素区CA中的子像素2减少，从而使得子像素区CA中的子像素2的像素密度小于所述显示区AA中的子像素11的像素密度，提高电子元件区的光透率。
进一步地，所述方法还包括：
在所述电子元件区和所述子像素区之间设置薄膜晶体管层；
在所述薄膜晶体管层上开设与所述电子元件区相对应的第二孔，并在所述第二孔内填充透明材料。
需要说明的是，第二孔内填充的透明材料可以为硅氧烷或透明聚酰亚胺等。第二孔的位置与电子元件区的位置相对应，第二孔的大小也可以与电子元件区的大小相对应，在第二孔内填充透明材料以进一步提高电子元件区的光透率。
进一步地，所述方法还包括：
提供衬底基板；
在所述衬底基板远离所述子像素区的一侧设置凹槽，并将所述凹槽设为所述电子元件区；所述第一孔在所述衬底基板上的正投影位于所述凹槽内。
在一个具体的实施方式中，电子元件区设置于OLED显示面板的底面与子像素区相对应的位置，从而使电子元件设置于OLED显示面板的底面与子像素区相对应的位置，减小电子元件在非显示区域的占用空间，增加显示屏占比。
在另一个具体的实施方式中，如图2所示，所述OLED面板还包括衬底基板31，衬底基板31的材料主要为聚酰亚胺（Polyimide, PI），PI材料可以有效地提高透光度。所述衬底基板31远离子像素区CA的一侧设有凹槽5，凹槽5即为电子元件区5，第一孔61在衬底基板31上的正投影位于所述凹槽5内。通过在衬底基板31上设置凹槽5，以减薄衬底基板31，进一步增加位于衬底基板31底部的电子元件区5的透光率。
由上述可知，本实施例提供的OLED显示屏的制作方法，在与电子元件区对应设置的子像素区中，使至少一个子像素开设第一孔，且第一孔内填充透明材料，减小电子元件区对应的子像素区的像素密度，提高电子元件区的光透率，同时减小电子元件区在非显示区的占用空间，增加显示屏占比。
参见图4，是本发明实施例提供的智能终端的结构示意图。所述智能终端包括电子元件51以及OLED显示面板52。其中，OLED显示面板52为上述实施例中的OLED面板，在此不再详细赘述。
所述电子元件51设于所述OLED显示面板52背面的电子元件区5中，该电子元件区5可以是OLED显示面板52背面的凹槽5，即电子元件51可以设在OLED显示面板52背面的凹槽5中。其中，电子元件51可以是摄像头的传感器单元。
由上述可知，本发明实施例提供的智能终端，在与电子元件区对应设置的子像素区中，使至少一个子像素开设第一孔，且第一孔内填充透明材料，减小电子元件区对应的子像素区的像素密度，提高电子元件区的光透率，同时减小电子元件区在非显示区的占用空间，增加显示屏占比。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (17)

  1. 一种OLED显示面板，其中，包括用于放置电子元件的电子元件区以及对应设置在所述电子元件区上的子像素区，所述子像素区包括多个子像素；
    至少一个所述子像素开设有第一孔，所述第一孔内填充有透明材料。
  2. 根据权利要求1所述的OLED显示面板，其中，所述电子元件区与所述子像素区之间还设有薄膜晶体管层；
    所述薄膜晶体管层上设有与所述电子元件区相对应的第二孔，所述第二孔内填充有所述透明材料。
  3. 根据权利要求2所述的OLED显示面板，其中，所述OLED面板还包括衬底基板，所述衬底基板包括所述电子元件区，所述电子元件区是设于所述衬底基板远离所述子像素区的一侧的凹槽。
  4. 根据权利要求3所述的OLED显示面板，其中，所述第一孔在所述衬底基板上的正投影位于所述凹槽内。
  5. 根据权利要求3所述的OLED显示面板，其中，所述薄膜晶体管层包括依次设置在所述衬底基板上的缓冲层、有源层、层间绝缘层、栅极、栅极绝缘层、源漏极和平坦化层；
    所述第二孔贯穿所述缓冲层、所述有源层、所述层间绝缘层、所述栅极、所述栅极绝缘层、所述源漏极和所述平坦化层，或者所述第二孔贯穿所述有源层、所述层间绝缘层、所述栅极、所述栅极绝缘层、所述源漏极和所述平坦化层。
  6. 根据权利要求1所述的OLED显示面板，其中，所述透明材料包括硅氧烷和透明聚酰亚胺中的至少一种。
  7. 根据权利要求1所述的OLED显示面板，其中，所述OLED显示面板还包括设置在所述电子元件区外的显示区；
    对应设置在所述电子元件区上的子像素区的像素密度小于所述显示区的像素密度。
  8. 一种OLED显示面板的制作方法，其中，包括：
    对应设置电子元件区和子像素区；所述电子元件区用于放置电子元件，所述子像素区包括多个子像素；
    在至少一个所述子像素处开设第一孔，并在所述第一孔内填充透明材料。
  9. 根据权利要求8所述的OLED显示屏的制作方法，其中，所述方法还包括：
    在所述电子元件区和所述子像素区之间设置薄膜晶体管层；
    在所述薄膜晶体管层上开设与所述电子元件区相对应的第二孔，并在所述第二孔内填充透明材料。
  10. 根据权利要求8所述的OLED显示屏的制作方法，其中，所述方法还包括：
    提供衬底基板；
    在所述衬底基板远离所述子像素区的一侧设置凹槽，并将所述凹槽设为所述电子元件区；所述第一孔在所述衬底基板上的正投影位于所述凹槽内。
  11. 一种智能终端，其中，包括OLED显示面板和电子元件；
    所述OLED显示面板包括电子元件区以及对应设置在所述电子元件区上的子像素区，所述子像素区包括多个子像素；
    至少一个所述子像素开设有第一孔，所述第一孔内填充有透明材料；所述电子元件设于所述电子元件区内。
  12. 根据权利要求11所述的智能终端，其中，所述电子元件区与所述子像素区之间还设有薄膜晶体管层；
    所述薄膜晶体管层上设有与所述电子元件区相对应的第二孔，所述第二孔内填充有所述透明材料。
  13. 根据权利要求12所述的智能终端，其中，所述OLED面板还包括衬底基板，所述衬底基板包括所述电子元件区，所述电子元件区是设于所述衬底基板远离所述子像素区的一侧的凹槽。
  14. 根据权利要求13所述的智能终端，其中，所述第一孔在所述衬底基板上的正投影位于所述凹槽内。
  15. 根据权利要求13所述的智能终端，其中，所述薄膜晶体管层包括依次设置在所述衬底基板上的缓冲层、有源层、层间绝缘层、栅极、栅极绝缘层、源漏极和平坦化层；
    所述第二孔贯穿所述缓冲层、所述有源层、所述层间绝缘层、所述栅极、所述栅极绝缘层、所述源漏极和所述平坦化层，或者所述第二孔贯穿所述有源层、所述层间绝缘层、所述栅极、所述栅极绝缘层、所述源漏极和所述平坦化层。
  16. 根据权利要求11所述的智能终端，其中，所述透明材料包括硅氧烷和透明聚酰亚胺中的至少一种。
  17. 根据权利要求11所述的智能终端，其中，所述OLED显示面板还包括设置在所述电子元件区外的显示区；
    对应设置在所述电子元件区上的子像素区的像素密度小于所述显示区的像素密度。
PCT/CN2019/077274 2018-12-29 2019-03-07 一种oled显示面板及其制作方法、智能终端 Ceased WO2020133701A1 (zh)

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