Classifications

• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01D—SEPARATION
  • B01D36/00—Filter circuits or combinations of filters with other separating devices
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
  • B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
  • B01J20/22—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising organic material
  • B01J20/26—Synthetic macromolecular compounds
  • B01J20/265—Synthetic macromolecular compounds modified or post-treated polymers
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
  • B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
  • B01J20/22—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising organic material
  • B01J20/26—Synthetic macromolecular compounds
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01D—SEPARATION
  • B01D15/00—Separating processes involving the treatment of liquids with solid sorbents; Apparatus therefor
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01D—SEPARATION
  • B01D39/00—Filtering material for liquid or gaseous fluids
  • B01D39/14—Other self-supporting filtering material ; Other filtering material
  • B01D39/16—Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres
  • B01D39/1607—Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres the material being fibrous
  • B01D39/1623—Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres the material being fibrous of synthetic origin
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01D—SEPARATION
  • B01D39/00—Filtering material for liquid or gaseous fluids
  • B01D39/14—Other self-supporting filtering material ; Other filtering material
  • B01D39/16—Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres
  • B01D39/1607—Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres the material being fibrous
  • B01D39/1623—Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres the material being fibrous of synthetic origin
  • B01D39/163—Other self-supporting filtering material ; Other filtering material of organic material, e.g. synthetic fibres the material being fibrous of synthetic origin sintered or bonded
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
  • B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
  • B01J20/22—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof comprising organic material
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
  • B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
  • B01J20/28—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
  • B01J20/00—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof
  • B01J20/28—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties
  • B01J20/28014—Solid sorbent compositions or filter aid compositions; Sorbents for chromatography; Processes for preparing, regenerating or reactivating thereof characterised by their form or physical properties characterised by their form
  • B01J20/28033—Membrane, sheet, cloth, pad, lamellar or mat
  • B01J20/28035—Membrane, sheet, cloth, pad, lamellar or mat with more than one layer, e.g. laminates, separated sheets
• • C—CHEMISTRY; METALLURGY
  • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
  • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
  • C09D181/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur, with or without nitrogen, oxygen, or carbon only; Coating compositions based on polysulfones; Coating compositions based on derivatives of such polymers
  • C09D181/04—Polysulfides
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/094—Multilayer resist systems, e.g. planarising layers
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/004—Photosensitive materials
  • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
  • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/16—Coating processes; Apparatus therefor
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01D—SEPARATION
  • B01D2239/00—Aspects relating to filtering material for liquid or gaseous fluids
  • B01D2239/04—Additives and treatments of the filtering material
  • B01D2239/0407—Additives and treatments of the filtering material comprising particulate additives, e.g. adsorbents
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01D—SEPARATION
  • B01D2239/00—Aspects relating to filtering material for liquid or gaseous fluids
  • B01D2239/06—Filter cloth, e.g. knitted, woven non-woven; self-supported material
  • B01D2239/0604—Arrangement of the fibres in the filtering material
  • B01D2239/0618—Non-woven
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01D—SEPARATION
  • B01D2239/00—Aspects relating to filtering material for liquid or gaseous fluids
  • B01D2239/06—Filter cloth, e.g. knitted, woven non-woven; self-supported material
  • B01D2239/065—More than one layer present in the filtering material
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01D—SEPARATION
  • B01D2239/00—Aspects relating to filtering material for liquid or gaseous fluids
  • B01D2239/06—Filter cloth, e.g. knitted, woven non-woven; self-supported material
  • B01D2239/069—Special geometry of layers
  • B01D2239/0695—Wound layers
• • B—PERFORMING OPERATIONS; TRANSPORTING
  • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
  • B01D—SEPARATION
  • B01D2239/00—Aspects relating to filtering material for liquid or gaseous fluids
  • B01D2239/12—Special parameters characterising the filtering material
  • B01D2239/1233—Fibre diameter

Definitions

• the present invention relates to a method for producing a composition for forming a coating film for lithography, in which metal impurities, which cause defects in a lithography process in manufacturing a semiconductor device, are reduced.
• Patent Document 1 discloses a filter having a high metal adsorption removal efficiency.
• the present invention relates to a method for producing a composition for forming a coating film for lithography, in which a metal impurity that causes a minute defect on a wafer is reduced in a lithography step in manufacturing a semiconductor device, and a precursor for a composition for forming a coating film for lithography. It aims at providing the metal reduction method of.
• the present invention includes the following.
• a method for producing a coating film forming composition for lithography comprising the step of passing a liquid through a filter cartridge for removing metal, wherein the filter cartridge for removing metal is A filter cartridge in which a plurality of types of filtration base fabrics are laminated or wound around a hollow inner cylinder,
• the filtration base fabric is a nonwoven fabric in which a metal adsorption group is chemically bonded to a polyolefin fiber
• the base fabric for filtration includes a non-woven fabric layer A and a non-woven fabric layer B,
• the non-woven fabric layer A is composed of a polyolefin fiber in which a sulfonic acid group is chemically bonded as a metal adsorption group,
• the non-woven fabric layer B is selected from the group consisting of an amino group, an N-methyl-D-glucamine group, an iminodiacetic acid group, an iminodiethanol group, an amidoxime group, a phosphoric
• a method for producing a coating film forming composition for lithography which is a filter cartridge comprising at least one kind of polyolefin fiber chemically bonded to the filter cartridge.
• the method for producing the composition for forming a coating film for lithography according to [1] which comprises a step of passing the solution through a filter cartridge for removing fine particles.
• the filter cartridge has a plurality of types of filtration base cloth laminated or wound around a hollow inner cylinder,
• the filtration base fabric is a nonwoven fabric in which a metal adsorption group is chemically bonded to a polyolefin fiber
• the base fabric for filtration includes a non-woven fabric layer A and a non-woven fabric layer B,
• the non-woven fabric layer A is composed of a polyolefin fiber in which a sulfonic acid group is chemically bonded as a metal adsorption group,
• the non-woven fabric layer B is at least selected from an amino group, an N-methyl-D-glucamine group, an iminodiacetic acid group, an
• a method for reducing metal in a coating film-forming composition precursor for lithography which is a filter cartridge composed of one kind of polyolefin fiber chemically bonded.
• a step of exposing and developing to form a resist pattern which is used for manufacturing a semiconductor.
• a resist underlayer film is formed using the resist underlayer film forming composition according to any one of [4] to [8] on a semiconductor substrate on which an inorganic film may be formed, and the resist underlayer is formed.
• a resist pattern is formed on the film, the surface of the inorganic film or the semiconductor substrate is exposed by dry etching the resist underlayer film using the resist pattern as a mask, and the resist and the resist underlayer film after dry etching are used as a mask,
• a method of manufacturing a semiconductor device comprising a step of processing the inorganic film or the semiconductor substrate by dry etching.
• a method for producing an organic solvent for a composition for forming a coating film for lithography which comprises a step of passing a liquid through a filter cartridge for removing metal, wherein the filter cartridge for removing metal is A filter cartridge in which a plurality of types of filtration base fabrics are laminated or wound around a hollow inner cylinder,
• the filtration base fabric is a nonwoven fabric in which a metal adsorption group is chemically bonded to a polyolefin fiber
• the base fabric for filtration includes a non-woven fabric layer A and a non-woven fabric layer B,
• the non-woven fabric layer A is composed of a polyolefin fiber in which a sulfonic acid group is chemically bonded as a metal adsorption group,
• the non-woven fabric layer B is selected from the group consisting of an amino group, an N-methyl-D-glucamine group, an iminodiacetic acid group, an iminodiethanol group, an amidoxime group, a phosphoric acid
• a method for producing an organic solvent for a composition for forming a coating film for lithography which is a filter cartridge characterized by comprising at least one kind of polyolefin fiber chemically bonded.
• a method for producing a solvent for a composition for forming a coating film for lithography which comprises a step of passing a liquid through a filter cartridge for removing metal, wherein the filter cartridge for removing metal is A filter cartridge in which a plurality of types of filtration base fabrics are laminated or wound around a hollow inner cylinder,
• the filtration base fabric is a nonwoven fabric in which a metal adsorption group is chemically bonded to a polyolefin fiber
• the base fabric for filtration includes a non-woven fabric layer A and a non-woven fabric layer B,
• the non-woven fabric layer A is composed of a polyolefin fiber in which a sulfonic acid group is chemically bonded as a metal adsorption group
• the non-woven fabric layer B is selected from the
• the filter cartridge according to the present invention By using the filter cartridge according to the present invention to produce a coating film forming composition for lithography, it is possible to produce a coating film forming composition for lithography in which metal impurities are significantly reduced. Various minute defects (defects) in the lithography process in the semiconductor manufacturing process can be reduced.
• the method for producing a coating film-forming composition for lithography of the present invention is a method for producing a coating film-forming composition precursor for lithography which is in a solution at room temperature, and then the composition precursor is described in detail below with reference to a metal removal filter cartridge. And the step of passing the solution through.
• the above-mentioned liquid passing step is, for example, a method in which a precursor for a coating film forming composition for lithography is manufactured by a method known per se, and then directly connected (at two points, an inlet and an outlet) to the composition manufacturing facility (manufacturing container). It is carried out by passing the liquid through a filter cartridge for removal.
• the liquid passing step may be performed once or twice or more, but is preferably circulation filtration using a pump.
• the time required for circulation is, for example, 3 to 144 hours, or 6 to 72 hours, or 12 to 48 hours.
• the filtration flow rate is, for example, 1 to 1000 L/hour, or 10 to 500 L/hour, or 20 to 100 L/hour.
• the coating film forming composition precursor for lithography used in the present application includes, for example, a photoresist composition, a resist underlayer film forming composition (containing an organic compound and/or an inorganic compound) described below, and a substrate for processing a semiconductor substrate.
• the composition is not limited to these.
• the exposure wavelength in the lithography step may be i-ray, KrF excimer laser, ArF excimer laser, EUV (extreme ultraviolet) or EB (electron beam).
• the resist upper layer film forming composition for the resist upper layer film described in WO2014/115843, WO2015/129486, etc. the self-polymerization of the block copolymer described in WO2013/146600, WO2014/097993, etc.
• An underlayer film forming composition for a self-assembled film using an assembly (DSA, Direct Self Assembly) technique for example, an upper layer film forming composition for the self-assembled film described in WO2018/051907, for example WO2016.
• the coating composition for pattern reversal described in Japanese Patent Publication No. /0315663 may be used.
• a photoresist composition positive type and negative type for a photoresist film, which is known per se, which is formed by coating on a semiconductor wafer by spin coating and baking, and a resist underlayer film known per se
• Resist underlayer film forming composition containing an organic compound and/or an inorganic compound
• a protective film forming composition for a publicly known semiconductor substrate protective film used in wet etching of a publicly known semiconductor substrate itself
• Known resist upper layer film forming composition for a resist upper layer film a lower layer film forming composition for a self-assembled film known per se, an upper layer film forming composition for a self-assembled film known per se, but preferably It is a protective film forming composition or a resist underlayer film forming composition.
• a resist underlayer film forming composition is preferred.
• a resist underlayer film forming composition for ArF, EUV or EB is preferable.
• the underlayer film forming composition of the self-assembled film is preferable.
• Preferred is a composition for forming an upper layer film of a self-assembled film.
• Preferred is a resist upper layer film forming composition for EUV.
• a coating composition for pattern reversal is preferred.
• Examples of the resist underlayer film forming composition include WO 2009/096340, JP 2009-053704 A, WO 2010/147155 A, WO 2011/102470 A, WO 2013/047516 A, WO 2015/030060 A, WO 2018/052130. No. 2, WO2019/124474, WO2019/124475, WO2019/151471, PCT/JP2019/042708, Japanese Patent Application No. 2019-007857, Japanese Patent Application No. 2019-088345, etc., Examples thereof include a resist underlayer forming composition and a silicon-containing resist underlayer film forming composition.
• the solid content of the coating film forming composition for lithography and the precursor of the coating film forming composition for lithography according to the present invention is usually 0.1 to 70% by mass, preferably 0.1 to 60% by mass, and preferably 0.1 to 40% by mass.
• the solid content is the content ratio of all components excluding the solvent from the coating film forming composition for lithography.
• the proportion of the polymer in the solid content is, for example, 1 to 100% by mass, 2 to 100% by mass, 3 to 100% by mass, 4 to 100% by mass, 5 to 100% by mass, 10 to 100% by mass, 30 to 100% by mass. %, 50 to 100% by mass, 6 to 100% by mass, 1 to 99.9% by mass, 50 to 99.9% by mass, 50 to 95% by mass, or 50 to 90% by mass.
• the coating film forming composition for lithography used in the present application preferably contains a polymer having a weight average molecular weight of 800 or more and an organic solvent.
• a polymer having a weight average molecular weight of 800 or more preferably contains a polymer having a weight average molecular weight of 800 or more and an organic solvent.
• X is the following formula (2), formula (3) or formula (4):
• R 1 to R 5 each independently represent a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, an alkenyl group having 2 to 6 carbon atoms, a benzyl group or a phenyl group, and the phenyl group is At least one group selected from the group consisting of an alkyl group having 1 to 6 carbon atoms, a halogen atom, an alkoxy group having 1 to 6 carbon atoms, a nitro group, a cyano group, and an alkylthio group having 1 to 6 carbon atoms.
• R 1 and R 2 , and R 3 and R 4 may be bonded to each other to form a ring having 3 to 6 carbon atoms.
• a 1 to A 6 each independently represent a hydrogen atom, a methyl group or an ethyl group
• Q 1 represents a divalent group containing a disulfide bond, preferably a divalent group containing an alkylene group having 1 to 6 carbon atoms at both ends of the disulfide bond
• n is the number of repeating unit structures and represents an integer of 5 to 100.
• the polymer of the present application includes, for example, the polymer described in WO 2009/096340, the bifunctional or higher functional compound having at least one disulfide bond described in Japanese Patent Application No. 2018-121282, and the trifunctional or higher functional compound. Reaction products of, but are not limited to.
• the polymer is a reaction product of a bifunctional compound (A) having at least one disulfide bond and a bifunctional compound (B) different from the compound (A), the main chain in the polymer There is a disulfide bond in.
• the polymer has the following formula (1): (In the above formula (1), R 1 is an alkyl group having 0 to 1 carbon atoms, n is the number of repeating unit structures, represents an integer of 0 to 1, and m represents an integer of 0 or 1.
• Z 1 is the following formula (2) or formula (3):
• X is the following formula (4), formula (51) or formula (6):
• R 2 to R 61 (R 2 , R 3 , R 4 , R 51 and R 61 are each independently a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or 3 to 6 carbon atoms).
• a 1 to A 6 each independently represent a hydrogen atom, a methyl group or an ethyl group
• Q 1 represents an alkylene group having 1 to 10 carbon atoms, which is interrupted by a disulfide bond
• l is the number of repeating unit structures and represents an integer of 5 to 100.
• It may have a repeating unit structure represented by Q 1 is preferably an alkylene group having 2 to 6 carbon atoms, which is interrupted by a disulfide bond.
• Examples of the above-mentioned "ring having 3 to 6 carbon atoms" include cyclopropane, cyclobutane, cyclopentane, cyclopentadiene and cyclohexane.
• the formula (1) is the following formula (5): [In the above formula (5), X represents a group represented by the above formula (4), formula (51) or formula (6), and R 6 and R 7 are each independently an alkylene having 1 to 3 carbon atoms. Represents a group or a direct bond, p is the number of repeating unit structures and represents an integer of 5 to 100. ] May be represented by The polymer of the present application is preferably represented by the following (formula P-6) to (formula P-8). The polymer is a reaction product synthesized by reacting a bifunctional or higher functional compound (A) having at least one disulfide bond with a bifunctional or higher functional compound (B) by a method known per se. Is preferred.
• alkyl group having 1 to 6 carbon atoms examples include methyl group, ethyl group, n-propyl group, i-propyl group, cyclopropyl group, n-butyl group, i-butyl group, s-butyl group, t- Butyl group, cyclobutyl group, 1-methyl-cyclopropyl group, 2-methyl-cyclopropyl group, n-pentyl group, 1-methyl-n-butyl group, 2-methyl-n-butyl group, 3-methyl-n -Butyl group, 1,1-dimethyl-n-propyl group, 1,2-dimethyl-n-propyl group, 2,2-dimethyl-n-propyl group, 1-ethyl-n-propyl group, cyclopentyl group, 1 -Methyl-cyclobutyl group, 2-methyl-cyclobutyl group, 3-methyl-cyclobutyl group, 1,2-dimethyl-cyclobut
• alkenyl group having 2 to 6 carbon atoms examples include vinyl group, allyl group, propenyl group, butenyl group, hexenyl group and cyclohexenyl group.
• alkoxy group having 1 to 6 carbon atoms examples include methoxy group, ethoxy group, n-propoxy group, isopropoxy group, n-butoxy group, t-butoxy group, cyclopentyloxy group and cyclohexyloxy group.
• alkylthio group having 1 to 10 carbon atoms examples include ethylthio group, butylthio group, hexylthio group and octylthio group.
• the alkylene group having 1 to 6 carbon atoms is a divalent organic group corresponding to the above alkyl group, and examples thereof include methylene group, ethylene group, n-propylene group, isopropylene group, cyclopropylene group and n-butylene.
• Weight average molecular weight is 800 or more, for example 800 to 100,000, or 1,500 to 50,000, or 2,000 to 30,000, or 3,000 to 20,000 Polymers can be used.
• the weight average molecular weight can be determined, for example, under the following conditions.
• Device Tosoh Corporation HLC-8320GPC GPC column: Shodex [registered trademark]/Asahipak [registered trademark] (Showa Denko KK) Column temperature: 40°C Flow rate: 0.35 mL/min
• Eluent Tetrahydrofuran (THF) Standard sample: Polystyrene (Tosoh Corporation)
• the coating film forming composition for lithography of the present invention can be prepared by dissolving the above components in an organic solvent, and is used in a uniform solution state.
• any solvent that can dissolve the above components can be used without particular limitation.
• the composition for forming a coating film for lithography and the precursor for a coating film forming composition for lithography according to the present invention are used in a uniform solution state, in consideration of the coating performance, it is generally used in a lithography process. It is recommended to use the organic solvent used.
• organic solvent examples include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monoethyl ether, Propylene glycol monomethyl ether acetate, propylene glycol propyl ether acetate, toluene, xylene, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, cycloheptanone, 4-methyl-2-pentanol, methyl 2-hydroxyisobutyrate, 2- Ethyl hydroxyisobutyrate, ethyl ethoxyacetate, 2-hydroxyethyl acetate, methyl 3-methoxypropionate, ethyl 3-me
• propylene glycol monomethyl ether propylene glycol monomethyl ether acetate, ethyl lactate, butyl lactate, cyclohexanone and the like are preferable. Particularly preferred are propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate.
• the coating film forming composition for lithography used in the present application preferably contains a crosslinking compound.
• the cross-linking compound include a melamine type, a substituted urea type, a polymer type thereof, and the like, as well as an epoxy type or a polymer type thereof and a blocked isocyanate type or a polymer type thereof.
• cross-linking compounds having at least two cross-linking substituents, methoxymethylated glycoluril, butoxymethylated glycoluril, methoxymethylated melamine, butoxymethylated melamine, methoxymethylated benzogwanamine, butoxymethylated benzogwanamine, It is a compound such as methoxymethylated urea, butoxymethylated urea, methoxymethylated thiourea, or methoxymethylated thiourea.
• a specific example is tetramethoxymethylglycoluril.
• the condensate of these compounds can also be used.
• crosslinkable compound a crosslinker having high heat resistance
• a cross-linking agent having high heat resistance a compound containing a cross-linking substituent having an aromatic ring (for example, a benzene ring or a naphthalene ring) in the molecule can be used.
• this compound include a compound having a partial structure of the following formula (5-1) and a polymer or oligomer having a repeating unit of the following formula (5-2).
• R 11 , R 12 , R 13 , and R 14 are a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, and the above-mentioned examples can be used for these alkyl groups.
• M1 is 1 ⁇ m1 ⁇ 6-m2
• m2 is 1 ⁇ m2 ⁇ 5
• m3 is 1 ⁇ m3 ⁇ 4-m2
• m4 is 1 ⁇ m4 ⁇ 3.
• the above compounds can be obtained as products of Asahi Organic Materials Co., Ltd. and Honshu Chemical Industry Co., Ltd.
• the compound of formula (6-22) can be obtained under the trade name TMOM-BP of Asahi Organic Materials Co., Ltd.
• TMOM-BP trade name of Asahi Organic Materials Co., Ltd.
• a compound having at least two epoxy groups can also be used. Examples of such compounds include tris(2,3-epoxypropyl)isocyanurate, 1,4-butanediol diglycidyl ether, 1,2-epoxy-4-(epoxyethyl)cyclohexane, glycerol triglycidyl ether, diethylene glycol.
• a polymer having an epoxy group can also be used as the compound having at least two epoxy groups.
• any polymer having an epoxy group can be used without particular limitation.
• Such a polymer can be produced by addition polymerization using an addition polymerizable monomer having an epoxy group, or a polymer compound having a hydroxy group and a compound having an epoxy group such as epichlorohydrin and glycidyl tosylate. It can be produced by reaction.
• Examples thereof include addition polymerization polymers such as polyglycidyl acrylate, copolymers of glycidyl methacrylate and ethyl methacrylate, copolymers of glycidyl methacrylate, styrene and 2-hydroxyethyl methacrylate, and condensation polymerization polymers such as epoxy novolac.
• the weight average molecular weight of the polymer is, for example, 300 to 200,000.
• the weight average molecular weight is a value obtained by gel permeation chromatography (GPC) using polystyrene as a standard sample.
• an epoxy resin having an amino group can also be used.
• examples of such an epoxy resin include YH-434 and YH-434L (manufactured by Shin Nikka Epoxy Co., Ltd. (formerly Toto Kasei Co., Ltd.)).
• a compound having at least two blocked isocyanate groups can also be used as the cross-linking agent.
• examples of such compounds include Takenate (registered trademark) B-830 and B-870N manufactured by Mitsui Chemicals, Inc. and VESTANAT (registered trademark)-B1358/100 manufactured by Evonik Degussa. These cross-linking agents can be used alone or in combination of two or more.
• the amount of the crosslinking compound added varies depending on the coating solvent used, the underlying substrate used, the required solution viscosity, the required film shape, etc., but the composition for forming a coating film for lithography and the composition for forming a coating film for lithography are used.
• the amount is usually 0.001 to 80% by weight, preferably 0.01 to 50% by weight, and more preferably 0.1 to 40% by weight, based on the total solid content of the precursor.
• These crosslinkable compounds may cause a crosslinking reaction by self-condensation, but when a crosslinkable substituent is present in the above-mentioned polymer of the present invention, a crosslinkable reaction can be caused with the crosslinkable substituent.
• the composition for forming a coating film for lithography and the precursor for a composition for forming a coating film for lithography of the present invention can contain a crosslinking catalyst as an optional component in order to accelerate the crosslinking reaction.
• a crosslinking catalyst in addition to an acidic compound (crosslinking acid catalyst), a compound that generates an acid or a base by heat can be used.
• a sulfonic acid compound or a carboxylic acid compound can be used as the acidic compound, and a thermal acid generator can be used as the compound that generates an acid by heat.
• sulfonic acid compound or the carboxylic acid compound examples include ammonium trifluoroacetic acid, p-toluenesulfonic acid, trifluoromethanesulfonic acid, pyridinium trifluoromethanesulfonate, pyridinium-p-toluenesulfonate, pyridinium-4-hydroxybenzenesulfonate and salicylic acid.
• Camphorsulfonic acid 5-sulfosalicylic acid, 4-chlorobenzenesulfonic acid, 4-hydroxybenzenesulfonic acid, pyridinium-4-hydroxybenzenesulfonic acid, benzenedisulfonic acid, 1-naphthalenesulfonic acid, 4-nitrobenzenesulfonic acid, citric acid , Benzoic acid, and hydroxybenzoic acid.
• thermal acid generator for example, K-PURE [registered trademark] CXC-1612, CXC-1614, TAG-2172, TAG-2179, TAG-2678, TAG2689 (above, manufactured by King Industries), And SI-45, SI-60, SI-80, SI-100, SI-110, SI-150 (above, manufactured by Sanshin Chemical Industry Co., Ltd.).
• crosslinking catalysts can be used alone or in combination of two or more.
• the content thereof is usually 0.0001 to 20% by weight, preferably 0.01 to 20% by weight based on the total solid content of the coating film forming composition for lithography. It is 15% by weight, more preferably 0.1 to 10% by weight.
• the coating film forming composition for lithography used in the present invention may contain a surfactant as an optional component in order to improve the coating property on a semiconductor substrate.
• a surfactant include polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene oleyl ether and other polyoxyethylene alkyl ethers, polyoxyethylene octylphenyl ether, polyoxyethylene.
• Polyoxyethylene alkylaryl ethers such as nonylphenyl ether, polyoxyethylene/polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate, sorbitan monostearate, sorbitan monooleate, sorbitan trioleate, sorbitan trioleate Polyesters such as sorbitan fatty acid esters such as stearate, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate
• Nonionic surfactants such as oxyethylene sorbitan fatty acid esters, Ftop [registered trademark] EF301, EF303, EF352 (manufactured by Mitsubishi Materials Electronics Corporation), Megafac [registered trademark] F171, F173, R -30, R-30N, R-40, R-40-LM (man
• composition for forming a coating film for lithography contains a surfactant, the content thereof is usually 0.0001 to 10% by weight, preferably 0.01, based on the total solid content of the composition for forming a coating film for lithography. To 5% by weight.
• a light absorber a rheology modifier, an adhesion aid, etc.
• the rheology modifier is effective in improving the fluidity of the coating film forming composition for lithography.
• the adhesion aid is effective in improving the adhesiveness between the semiconductor substrate or the resist and the lower layer film.
• the filter cartridge used in the present invention is preferably the one described in JP-A-2018-167223.
• the filter cartridge used in the present invention is a filter cartridge in which a plurality of types of filtration base fabrics are laminated or wound around a hollow inner cylinder, and the filtration base fabric is a nonwoven fabric in which a metal adsorption group is chemically bonded to a polyolefin fiber.
• the filtration base fabric includes a non-woven fabric layer A and a non-woven fabric layer B, the non-woven fabric layer A is composed of polyolefin fibers chemically bonded with a sulfonic acid group as a metal adsorption group, and the non-woven fabric layer B is metal adsorption.
• the group is selected from the group consisting of an amino group, an N-methyl-D-glucamine group, an iminodiacetic acid group (iminodiacetic acid group), an iminodiethanol group, an amidoxime group, a phosphoric acid group, a carboxylic acid group and an ethylenediaminetriacetic acid group. It is characterized by comprising at least one kind of polyolefin fiber chemically bonded.
• the filter cartridge used in the present invention is a filter cartridge in which a plurality of types of filtration base fabrics are laminated or wound around a hollow inner cylinder, and the filtration base fabric is a nonwoven fabric in which a metal adsorption group is chemically bonded to a polyolefin fiber.
• the base fabric for filtration includes a non-woven fabric layer A and a non-woven fabric layer B.
• the non-woven fabric layer A is composed of polyolefin fibers chemically bonded with a sulfone group as a metal adsorption group
• the non-woven fabric layer B is an amino group, an N-methyl-D-glucamine group, an iminodiacetic acid group as a metal adsorption group.
• a plurality of types of filtration base fabrics also include ones obtained by combining different types of filtration base fabrics into one filtration base fabric.
• the non-woven fabric layer B is composed of polyolefin fibers chemically bonded with iminodiethanol groups. This is because the metal removal efficiency is high.
• the sulfonic acid group mainly adsorbs Na, Cu, and K
• the iminodiethanol group mainly adsorbs Cr, Al, and Fe.
• the polyolefin fibers constituting the nonwoven fabrics A and B are preferably long fibers. This is because long-fiber nonwoven fabric is less likely to generate fiber waste and has high filter performance. Among them, a melt blown long-fiber nonwoven fabric having a high mass per unit area (area weight) of 10 to 100 g/m 2 is preferable.
• the average fiber diameter of the polyolefin fibers constituting the nonwoven fabrics A and B is preferably 0.2 to 10 ⁇ m. Within the above range, the filter performance is high. In addition, since the surface area (specific surface area) can be increased and the surface of the base material for the graft polymerization reaction can be increased, the graft ratio can be increased.
• the polyolefin fiber is preferably one selected from polypropylene, a copolymer of propylene and ethylene, polyethylene, or a copolymer of ethylene and another ⁇ -olefin having 4 or more carbon atoms, and high density polyethylene is particularly preferable. These polymers are inert, stable to chemicals and capable of graft polymerization.
• the filter cartridge is a filter cartridge including a hollow inner cylinder and a filtration base cloth
• the filtration base cloth is a nonwoven fabric in which a metal adsorption group is chemically bonded to a polyolefin fiber
• the filtration base cloth is A filter cartridge in which a laminated structure is formed by being wound around the hollow inner cylinder is preferable.
• the filter of the present invention is a filter incorporating the filter cartridge.
• the filter cartridge has a base cloth for filtration wrapped around an inner cylinder and is housed in a container.
• the filter cartridge When the filter cartridge is installed in the filter container, it is installed in the filter with the filter cartridge housed in the container.
• the filter function can be regenerated by replacing only the filter cartridge, but the present invention is also applicable to a case where a filter container is replaced, such as a capsule type filter. It includes.
• the part corresponding to the filter cartridge is the filtering part.
• the method of chemically bonding various functional groups to the polyolefin fiber After irradiating the polyolefin fiber with radiation such as electron beam or ⁇ ray, it is brought into contact with an emulsion liquid containing a reactive monomer such as GMA, or after contacting the polyolefin fiber with an emulsion liquid containing a reactive monomer, an electron beam , ⁇ -rays or the like is irradiated to graft polymerize the reactive monomer to the polyolefin fiber.
• a dose of 1 to 200 kGy, preferably 5 to 100 kGy, and more preferably 10 to 50 kGy may be achieved.
• the electron beam irradiation device As for atmospheric conditions, it is preferable to perform irradiation under a nitrogen atmosphere.
• the electron beam irradiation device a commercially available one can be used.
• an area beam type electron beam irradiation device EC250/15/180L (manufactured by Iwasaki Electric Co., Ltd.), EC300/165/800 (Iwasaki Electric Co., Ltd. ) Company), EPS300 (manufactured by NHV Corporation) and the like can be used.
• the graft polymerization method include a liquid phase graft polymerization method, in which a nonwoven fabric is activated by irradiation with radiation such as ⁇ -rays or electron beams, and then water, a surfactant and a reactive monomer.
• a nonwoven fabric is activated by irradiation with radiation such as ⁇ -rays or electron beams, and then water, a surfactant and a reactive monomer.
• the non-woven fabric substrate to complete graft polymerization, and then the sulfonate group, amino group, N-methyl-D-glucamine group, or N-methyl-D-glucamine group is added to the graft chain formed on the substrate.
• a functional functional group such as an iminodiacetic acid group (iminodiacetic acid group), an iminodiethanol group, an amidoxime group, a phosphoric acid group, a carboxylic acid group, and an ethylenediaminetriacetic acid group, that is, an ion exchange group and/or a chelate group is introduced.
• a gas phase graft polymerization method in which the base material is brought into contact with the vapor of the monomer to carry out the polymerization, and the base material is immersed in the monomer solution and then taken out from the monomer solution.
• R in (Chemical Formula 5) to (Chemical Formula 8) is polyethylene (PE)+GMA (Chemical Formula 9) or polypropylene (PP)+GMA (Chemical Formula 10).
• n and m in the above (formula 9) to (formula 10) are integers of 1 or more.
• ⁇ Particle removal filter> In the method for producing a composition for forming a coating film for lithography of the present invention, it is preferable that the precursor for a composition for forming a coating film for lithography is passed through the filter cartridge and then passed through a filter for removing fine particles.
• a filter for removing fine particles As the fine particle removing filter, a known filter can be used, but the fine particle removing filter material is preferably at least one selected from the group consisting of polyethylene and nylon.
• the pore size of the filter for removing fine particles is usually 30 nm or less, and preferably 1 nm to 30 nm, for example 1 nm to 20 nm, 1 nm to 10 nm.
• the metal reduction method of the present application is a method of reducing the metal by filtering the coating film forming composition precursor for lithography described above with a filter cartridge,
• the cartridge filter has a plurality of types of filtration base cloth laminated or wound around a hollow inner cylinder,
• the filtration base fabric is a nonwoven fabric in which a metal adsorption group is chemically bonded to a polyolefin fiber
• the base fabric for filtration includes a non-woven fabric layer A and a non-woven fabric layer B
• the non-woven fabric layer A is composed of a polyolefin fiber in which a sulfonic acid group is chemically bonded as a metal adsorption group
• the non-woven fabric layer B comprises an amino group, an N-methyl-D-glucamine group, an iminodiacetic acid group (iminodiacetic acid group), an iminodiethanol group, an amidoxime group, a phosphoric acid group, a carboxylic acid group and ethylenedi
• metal impurities for example, Na, Cu, Cr, Al, Fe, etc.
• Various metal impurities are, for example, 0.5 ppb or less, for example, 0.4 ppb or less, for example, 0.3 ppb or less, for example, 0.2 ppb or less, for example, 0. It can be reduced to 1 ppb or less.
• the metal impurities can be quantified by the method described in Examples, for example.
• the substrate with a resist pattern according to the present invention can be produced by applying the above-mentioned composition for forming a coating film for lithography on a semiconductor substrate and baking it.
• Examples of the semiconductor substrate to which the composition for forming a coating film for lithography of the present invention is applied include silicon wafers, germanium wafers, and compound semiconductor wafers such as gallium arsenide, indium phosphide, gallium nitride, indium nitride, and aluminum nitride. Are listed.
• the inorganic film is formed by, for example, ALD (atomic layer deposition) method, CVD (chemical vapor deposition) method, reactive sputtering method, ion plating method, vacuum deposition. Method, spin coating method (spin on glass: SOG).
• ALD atomic layer deposition
• CVD chemical vapor deposition
• ion plating method vacuum deposition.
• spin coating method spin on glass: SOG.
• the inorganic film include a polysilicon film, a silicon oxide film, a silicon nitride film, a BPSG (Boro-Phospho Silicate Glass) film, a titanium nitride film, a titanium oxynitride film, a tungsten nitride film, a gallium nitride film, and gallium arsenide film.
• membranes include membranes.
• the resist underlayer film forming composition of the present invention is applied onto such a semiconductor substrate by an appropriate application method such as a spinner or coater. After that, the resist lower layer film is formed by baking using a heating means such as a hot plate.
• the baking conditions are usually appropriately selected from a baking temperature of 100° C. to 400° C. and a baking time of 0.3 minutes to 60 minutes.
• the baking temperature is preferably 120° C. to 350° C.
• the baking time is 0.5 minutes to 30 minutes
• more preferably the baking temperature is 150° C. to 300° C. and the baking time is 0.8 minutes to 10 minutes.
• the thickness of the formed coating film for lithography is, for example, 0.001 ⁇ m to 10 ⁇ m, preferably 0.002 ⁇ m to 1 ⁇ m, and more preferably 0.005 ⁇ m to 0.5 ⁇ m. If the baking temperature is lower than the above range, crosslinking may be insufficient, and it may be difficult to obtain resistance of the formed resist underlayer film to the resist solvent or the basic hydrogen peroxide aqueous solution. On the other hand, when the baking temperature is higher than the above range, the resist underlayer film may be decomposed by heat.
• Exposure is performed through a mask (reticle) for forming a predetermined pattern, and for example, i-line, KrF excimer laser, ArF excimer laser, EUV (extreme ultraviolet) or EB (electron beam) is used.
• An alkaline developer is used for the development, and is appropriately selected from a development temperature of 5° C. to 50° C. and a development time of 10 seconds to 300 seconds.
• alkaline developer examples include inorganic hydroxides such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and ammonia water; primary amines such as ethylamine and n-propylamine; diethylamine; Secondary amines such as di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide, choline and the like.
• inorganic hydroxides such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and ammonia water
• primary amines such as ethylamine and n-propylamine
• diethylamine Secondary amines such as di-n-butylamine, tertiary amines such as tri
• aqueous solution of alkali such as quaternary ammonium salt, cyclic amines such as pyrrole and piperidine, and the like can be used.
• an appropriate amount of alcohol such as isopropyl alcohol and a surfactant such as nonionic surfactant may be added to the above aqueous solution of alkalis before use.
• preferred developers are quaternary ammonium salts, more preferably tetramethylammonium hydroxide and choline.
• a surfactant or the like can be added to these developers. It is also possible to use a method of performing development with an organic solvent such as butyl acetate instead of the alkali developing solution, and developing a portion of the photoresist where the alkali dissolution rate is not improved.
• the coating film for lithography is dry-etched. At that time, when the inorganic film is formed on the surface of the used semiconductor substrate, the surface of the inorganic film is exposed, and when the inorganic film is not formed on the surface of the used semiconductor substrate, Expose the surface. After that, a semiconductor device is manufactured through a step of processing the substrate by dry etching.
• ⁇ Synthesis example 1 800 g of monoallyl diglycidyl isocyanuric acid (manufactured by Shikoku Chemicals Co., Ltd.), 608 g of 3,3′-dithiodipropionic acid (manufactured by Sakai Chemical Industry Co., Ltd., trade name: DTDPA), and a quaternary phosphonium salt as a catalyst.
• Triphenylmonoethylphosphonium bromide (53 g) was dissolved in propylene glycol monomethyl ether (2191 g), and the mixture was heated and stirred at 120° C. for 4 hours under a nitrogen atmosphere.
• the weight average molecular weight thereof was about 7,800 in terms of standard polystyrene.
• This reaction product contains a polymer compound having a structural unit represented by the following formula (A-1).
• Example 1 90 kg of the resist underlayer film forming composition obtained in Preparation Example 1 was used as a cartridge filter (10 inch) described in JP-A-2018-167223 (manufactured by Kurashiki Fiber Co., Ltd.) and a polyethylene filter Microgard TM UC Filter (model number: CWCF01MSTUC). , Nippon Entegris Co., Ltd.) and one nylon filter Ultipleats P-nylon (model number: ABD1ANM3EH1, manufactured by Nippon Pall Co., Ltd.) at a filtration rate of 50 L/hour for 24 hours.
• the metal content of the solution after filtration was measured by ICP-MS (Agilent 8800: manufactured by Agilent Technology Co., Ltd.).
• ⁇ Comparative example 2> To 90 kg of the resist underlayer film forming composition obtained in Preparation Example 1 above, 1.8 kg of strongly acidic ion exchange resin (XSC-1115-H: manufactured by Muromachi Chemical Co., Ltd.) was added, and ion exchange was carried out for 4 hours in a batch system, followed by filtration. To remove the ion exchange resin.
• the ion-exchanged resist underlayer film-forming composition was prepared by using one polyethylene filter Microgard TM UC Filter (model number: CWCF01MSTUC, manufactured by Nippon Entegris Co., Ltd.) and nylon filter Ultipurets P-nylon (model number: ABD1ANM3EH1, Nippon Pole Co., Ltd.).
• One company carried out a filtration treatment for 24 hours at a filtration rate of 50 L/hour.
• the metal content of the solution after filtration was measured by ICP-MS (Agilent 8800: manufactured by Agilent Technology Co., Ltd.).
• Table 1 shows the results of measuring the metal concentration after performing the treatment methods of Example 1, Comparative Example 1, and Comparative Example 2.
• Example 1 can reduce the metal more effectively than the metal reduction by the nylon filter filtration and the metal reduction by the ion exchange.
• the present invention it is possible to provide a composition for forming a coating film for lithography, in which the amount of metal impurities is particularly reduced.

Landscapes

• Chemical & Material Sciences (AREA)
• Chemical Kinetics & Catalysis (AREA)
• Analytical Chemistry (AREA)
• Organic Chemistry (AREA)
• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Structural Engineering (AREA)
• Architecture (AREA)
• Life Sciences & Earth Sciences (AREA)
• Materials Engineering (AREA)
• Wood Science & Technology (AREA)
• Materials For Photolithography (AREA)
• Separation Using Semi-Permeable Membranes (AREA)
• Paints Or Removers (AREA)
• Filtering Materials (AREA)
• Filtration Of Liquid (AREA)
• Solid-Sorbent Or Filter-Aiding Compositions (AREA)

Priority Applications (6)

Applications Claiming Priority (2)

Publications (1)

Family

ID=71100813

Family Applications (1)

Country Status (6)

Cited By (1)

Families Citing this family (1)

Citations (5)

Family Cites Families (11)

• 2019
  • 2019-12-18 WO PCT/JP2019/049504 patent/WO2020130005A1/ja not_active Ceased
  • 2019-12-18 FI FI20215644A patent/FI130725B1/en active
  • 2019-12-18 JP JP2020561476A patent/JPWO2020130005A1/ja active Pending
  • 2019-12-18 CN CN201980082879.XA patent/CN113226511A/zh active Pending
  • 2019-12-18 US US17/296,408 patent/US12153348B2/en active Active
  • 2019-12-20 TW TW108146835A patent/TWI859174B/zh active
• 2023
  • 2023-04-10 JP JP2023063316A patent/JP7652210B2/ja active Active

Patent Citations (5)

Also Published As

Similar Documents

Legal Events