WO2020124855A1 - 薄膜晶体管、薄膜晶体管的制作方法和液晶显示屏 - Google Patents

薄膜晶体管、薄膜晶体管的制作方法和液晶显示屏 Download PDF

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WO2020124855A1
WO2020124855A1 PCT/CN2019/080355 CN2019080355W WO2020124855A1 WO 2020124855 A1 WO2020124855 A1 WO 2020124855A1 CN 2019080355 W CN2019080355 W CN 2019080355W WO 2020124855 A1 WO2020124855 A1 WO 2020124855A1
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Prior art keywords
dielectric layer
thin film
film transistor
reflective coating
metal
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English (en)
French (fr)
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李明娟
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US16/972,621 priority Critical patent/US11955563B2/en
Publication of WO2020124855A1 publication Critical patent/WO2020124855A1/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G02F1/13685—Top gates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2203/00—Function characteristic
    • G02F2203/02—Function characteristic reflective
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Definitions

  • the invention relates to the field of electronic display, in particular to a thin film transistor, a manufacturing method of the thin film transistor, and a liquid crystal display screen.
  • the side-emitting liquid crystal display has gradually replaced the bottom-emitting liquid crystal display as the mainstream display.
  • the backlight sources are located on both sides of the liquid crystal display, and a backlight reflection plate is provided below the liquid crystal display. The light emitted by the side light source is reflected by the backlight reflection plate and then is directed to the liquid crystal display, becoming the liquid crystal display. Backlight.
  • the LCD screen its light transmittance is an important parameter that determines the quality of the LCD screen.
  • the gate metal layer is mostly formed of aluminum or molybdenum and is opaque. Therefore, part of the light reflected by the backlight emission panel to the liquid crystal display directly penetrates the light-transmitting area of the thin-film transistor layer, illuminating the upper liquid crystal and color film layers; the other part of the light that strikes the opaque area of the thin-film transistor layer will be It is blocked by the metal layer and cannot reach the upper liquid crystal and color film layers.
  • the metal has a certain reflectivity, and can reflect the light back to the backlight reflection plate, and after being reflected by the backlight reflection plate, it is directed to the thin film transistor layer again.
  • the reflectivity of the gate metal layer to light is less than 20%, and a large amount of light directed to the gate metal layer cannot be reflected, thereby reducing the penetration rate of the liquid crystal display and affecting product quality.
  • the invention provides a thin film transistor, a manufacturing method of the thin film transistor, and a liquid crystal display screen, so as to improve the light transmittance of the liquid crystal display screen.
  • the thin film transistor includes:
  • Source and drain regions on both sides of the channel region are Source and drain regions on both sides of the channel region
  • the gate metal above the reflective coating is the gate metal above the reflective coating
  • the reflective coating has a visible light reflectance greater than or equal to 80%.
  • the reflective coating is a metal with a mirror structure.
  • the reflective coating is mirror silver or mirror aluminum.
  • the present invention also provides a method for manufacturing a thin film transistor, which includes the following steps:
  • a metal plug is formed through the interlayer dielectric layer and electrically connected to the surface of the source and drain regions.
  • a method of forming a gate dielectric layer above the channel region includes:
  • the material of the sacrificial dielectric layer is silicon oxide or silicon nitride, and the thickness of the sacrificial dielectric layer is greater than or equal to twice the thickness of the gate dielectric layer;
  • the surface of the gate dielectric layer is a polished surface.
  • the reflective coating has a visible light reflectance greater than or equal to 80%.
  • the reflective coating is a metal with a mirror structure, wherein the method of forming the reflective coating above the gate dielectric layer is:
  • a metal having a mirror structure is formed on the polished surface by electroplating.
  • the reflective coating is mirror silver or mirror aluminum.
  • the present invention also provides a liquid crystal display, which includes a thin film transistor array, the thin film transistor array includes a plurality of thin film transistors electrically connected to each other, the thin film transistor includes:
  • Source and drain regions on both sides of the channel region are Source and drain regions on both sides of the channel region
  • the gate metal above the reflective coating is the gate metal above the reflective coating
  • the reflective coating has a visible light reflectance greater than or equal to 80%.
  • the reflective coating is a metal with a mirror structure.
  • the reflective coating is mirror silver or mirror aluminum.
  • the invention can reflect most of the light shining toward the gate metal back down After the second reflection, the backlight reflection plate is directed to the light-emitting area, instead of being absorbed by the opaque area, to avoid light loss.
  • the invention improves the light transmittance of the liquid crystal display screen and improves the performance of the liquid crystal display screen by increasing the reflectance of the opaque area of the thin film transistor of the liquid crystal display screen.
  • FIG. 1 is a schematic structural diagram of a side-emitting liquid crystal display screen in the prior art
  • FIG. 2 is a schematic structural view of a side-emitting liquid crystal display screen according to an embodiment of the invention.
  • FIG. 3 is a flowchart of a method for manufacturing a thin film transistor in an embodiment of the invention.
  • FIG. 1 is a schematic structural diagram of a side-emission liquid crystal display in the prior art.
  • the liquid crystal display includes a backlight reflector 10, a thin film transistor layer 20, a side backlight 30, a color film layer 40, and an encapsulation layer 50.
  • the reflectivity of the backlight reflective plate 10 to visible light is greater than 90%.
  • the backlight reflective plate 10 is metallic silver or metallic aluminum having a crystal plane structure, wherein the metallic silver of the crystal plane structure reflects light
  • the rate is greater than 99%, which can minimize the loss of light.
  • the thin film transistor layer 20 includes a substrate 210, an active region 220 located above the substrate 210, a gate dielectric layer 230 located above the active region 220, a gate metal 240 located above the gate dielectric layer 230, and covering the gate An interlayer dielectric layer 250 of the polar metal 240 and the active region 220, a source-drain metal layer 270 that is electrically connected to the active region through the interlayer dielectric layer 250, and covers the gate dielectric layer 250 and the source-drain
  • the pixel definition layer 260 of the metal layer 270 is provided.
  • the active region 220 has a channel region located in the center of the active region 220 and source and drain regions located on both sides of the channel region.
  • the gate dielectric layer 230 and the gate metal 240 are located above the channel region.
  • the color film layer 40 is located above the pixel definition layer 260. Among them, a liquid crystal layer (not shown in the figure) is further provided in the thin film transistor layer 20 and the color film layer 40.
  • the encapsulation layer 50 is located above the color film layer 40.
  • the packaging layer 50 integrates a touch element, which can realize a touch function.
  • the side backlight 30 is located on both sides of the gap between the backlight reflective plate 10 and the thin film transistor layer 20, and projects light onto the backlight reflective plate 10. The light is reflected by the backlight reflecting plate 10 and then strikes the thin film transistor layer 20 to achieve the backlight effect.
  • the gate metal is usually aluminum or molybdenum, which is opaque. Therefore, part of the reflected light directly penetrates the light-transmitting area of the thin-film transistor layer 20 and illuminates the upper liquid crystal and color film layer 40, such as light A; The metal layer blocks and cannot reach the upper liquid crystal and color filter layer 40, such as light B.
  • the metal has a certain reflectivity, and can reflect light back to the backlight reflection plate, and after being reflected by the backlight reflection plate, it is re-emitted to the thin film transistor layer, such as light C.
  • the reflectivity of the gate metal layer in the prior art to light is less than 20%, and a large amount of light incident on the gate metal layer cannot be reflected, thereby reducing the penetration rate of the liquid crystal display and affecting product quality.
  • FIG. 2 is a schematic structural diagram of a side-emitting liquid crystal display screen according to an embodiment of the present invention.
  • the liquid crystal display includes a backlight reflection plate 10, a thin film transistor layer 20, a side backlight 30, a color film layer 40, and an encapsulation layer 50.
  • the thin film transistor 20 includes: a substrate 210; an active region 220 located above the substrate 210; a channel located at the center of the active region 220 Source and drain regions on both sides of the channel region; gate dielectric layer 230 above the channel region; reflective coating 242 above the gate dielectric layer; above the reflective coating Gate metal 240; an interlayer dielectric layer 250 covering the gate metal 240, the active region 220 and the substrate 210; a metal plug that penetrates through the interlayer dielectric layer 250 and is electrically connected to the surface of the source and drain regions 270, and a pixel definition layer 260 covering the gate dielectric layer 250 and the source-drain metal layer 270.
  • the reflectivity of the reflective coating 242 to visible light is greater than or equal to 80%.
  • the reflective coating is a metal with a mirror structure.
  • the reflective coating is mirror silver or mirror aluminum.
  • FIG. 3 is a flowchart of a method for manufacturing a thin film transistor in an embodiment of the present invention.
  • the invention also provides a method for manufacturing the thin film transistor 20, wherein the method includes the following steps:
  • the reflectivity of the reflective coating 242 to visible light is greater than or equal to 80%.
  • the reflective coating is a metal with a mirror structure.
  • the reflective coating is mirror silver or mirror aluminum.
  • the method for forming the gate dielectric layer 230 above the channel region includes: forming a sacrificial dielectric layer above the channel region, the material of the sacrificial dielectric layer is oxidation Silicon or silicon nitride, the thickness of the sacrificial dielectric layer is greater than or equal to twice the thickness of the gate dielectric layer; chemical mechanical polishing is used to polish and polish the sacrificial dielectric layer to remove part of the sacrificial dielectric layer , Making the thickness of the remaining sacrificial dielectric layer equal to the thickness of the gate dielectric layer to form the gate dielectric layer; wherein, the surface of the gate dielectric layer is a polished surface.
  • the formation of the gate dielectric layer 230 by chemical mechanical polishing can make the gate dielectric layer 230 have a smooth surface, which is favorable for forming a reflective coating 242 with a mirror structure above the gate dielectric layer 230, and is conducive to further improving the reflective coating Reflectance of layer 242.
  • step S6 the method of forming the reflective coating layer 242 above the gate dielectric layer 230 is to form a metal with a mirror structure on the polished surface by electroplating.
  • the surface of the metal layer can be made into a smooth mirror surface, and its reflectivity can be enhanced.
  • the reflective coating is mirror silver or mirror aluminum.
  • the present invention also provides a liquid crystal display, wherein the liquid crystal display includes a thin film transistor array, and the thin film transistor array includes a plurality of thin film transistors electrically connected to each other, wherein the thin film transistor includes: a substrate 210; an active region 220 located above the substrate 210; a channel region located in the center of the active region 220; source and drain regions located on both sides of the channel region; a gate located above the channel region Dielectric layer 230; reflective coating 242 above the gate dielectric layer; gate metal 240 above the reflective coating; interlayer dielectric covering the gate metal 240, active region 220 and substrate 210 Layer 250; a metal plug 270 that penetrates through the interlayer dielectric layer 250, is electrically connected to the surface of the source-drain region, and a pixel definition layer 260 covering the gate dielectric layer 250 and the source-drain metal layer 270.
  • the invention can reflect most of the light shining toward the gate metal back down After the second reflection, the backlight reflection plate is directed to the light-emitting area, instead of being absorbed by the opaque area, to avoid light loss.
  • the invention improves the light transmittance of the liquid crystal display screen and improves the performance of the liquid crystal display screen by increasing the reflectance of the opaque area of the thin film transistor of the liquid crystal display screen.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Optical Elements Other Than Lenses (AREA)
  • Thin Film Transistor (AREA)

Abstract

本发明提供一种薄膜晶体管、薄膜晶体管的制作方法和液晶显示屏。所述薄膜晶体管包括：基板；位于所述基板上方的有源区；于所述有源区中心的沟道区；位于所述沟道区两侧的源漏区；位于所述沟道区上方的栅极介质层；位于所述栅极介质层上方的反射涂层；位于所述反射涂层上方的栅极金属；覆盖所述栅极金属、有源区和基板的层间介质层；贯穿所述层间介质层，与所述源漏区表面电连接的金属插塞。

Description

薄膜晶体管、薄膜晶体管的制作方法和液晶显示屏 技术领域
本发明涉及电子显示领域，尤其涉及一种薄膜晶体管、薄膜晶体管的制作方法和液晶显示屏。
 背景技术
随着液晶显示技术的发展，为了优化液晶显示屏的外观，液晶显示屏的厚度越来越薄。为了进一步减小液晶显示屏的厚度，侧发光液晶显示屏逐渐取代了底发光液晶显示屏成为主流显示屏。在侧发光液晶显示屏中，背光源位于液晶显示屏的两侧，液晶显示屏下方设置有背光反射板，侧光源发出的光线经背光反射板反射后射向液晶显示屏，成为液晶显示屏的背光源。
在液晶显示屏中，其透光率是决定液晶显示屏质量的重要参数。在侧发光液晶显示屏中，位于背光反射板正上方的薄膜晶体管层大部分结构是透光的，但是其中的栅极金属层多由铝或钼形成，是不透光的。因此，背光发射板反射向液晶显示屏的光线一部分直接穿透薄膜晶体管层的透光区域，照亮上层的液晶和彩膜层；另一部分射向薄膜晶体管层的不透光区域的光线则会被金属层遮挡，无法到达上层的液晶和彩膜层。通常，金属具有一定的反光性，能够将光线反射回背光反射板，经背光反射板反射后重新射向薄膜晶体管层。
 技术问题
现有技术中的栅极金属层对光线的反射能力只有不到20%，大量射向栅极金属层的光线无法被反射，从而降低了液晶显示屏的穿透率，影响产品质量。
 技术解决方案
本发明提供一种薄膜晶体管、薄膜晶体管的制作方法和液晶显示屏，以提高液晶显示屏的光线穿透率。
具体的，本发明提供了一种薄膜晶体管，所述薄膜晶体管包括：
基板；
位于所述基板上方的有源区；
位于所述有源区中心的沟道区；
位于所述沟道区两侧的源漏区；
位于所述沟道区上方的栅极介质层；
位于所述栅极介质层上方的反射涂层；
位于所述反射涂层上方的栅极金属；
覆盖所述栅极金属、有源区和基板的层间介质层；
贯穿所述层间介质层，与所述源漏区表面电连接的金属插塞。
根据本发明的其中一个方面，所述反射涂层对可见光的反射率大于或等于80%。
根据本发明的其中一个方面，所述反射涂层为具有镜面结构的金属。
根据本发明的其中一个方面，所述反射涂层为镜面银或镜面铝。
相应的，本发明还提供了一种薄膜晶体管的制作方法，其包括以下步骤：
提供基板；
形成位于所述基板上方的有源区；
形成位于所述有源区中心的沟道区；
形成位于所述沟道区两侧的源漏区；
形成位于所述沟道区上方的栅极介质层；
形成位于所述栅极介质层上方的反射涂层；
形成位于所述反射涂层上方的栅极金属；
形成覆盖所述栅极金属、有源区和基板的层间介质层；
形成贯穿所述层间介质层，与所述源漏区表面电连接的金属插塞。
根据本发明的其中一个方面，形成位于所述沟道区上方的栅极介质层的方法包括：
在沟道区上方形成牺牲介质层，所述牺牲介质层的材质为氧化硅或氮化硅，所述牺牲介质层的厚度大于或等于所述栅极介质层的厚度的两倍；
采用化学机械抛光对所述牺牲介质层进行打磨和抛光，去除部分所述牺牲介质层，使剩余的牺牲介质层的厚度等于所述栅极介质层的厚度，形成所述栅极介质层；其中，
所述栅极介质层的表面为抛光表面。
根据本发明的其中一个方面，所述反射涂层对可见光的反射率大于或等于80%。
根据本发明的其中一个方面，所述反射涂层为具有镜面结构的金属，其中，形成位于所述栅极介质层上方的反射涂层的方法为：
通过电镀在所述抛光表面上形成具有镜面结构的金属。
根据本发明的其中一个方面，所述反射涂层为镜面银或镜面铝。
相应的，本发明还提供了一种液晶显示屏，其包括薄膜晶体管阵列，所述薄膜晶体管阵列包括多个彼此电连接的薄膜晶体管，所述薄膜晶体管包括：
基板；
位于基板上方的有源区；
位于所述有源区中心的沟道区；
位于所述沟道区两侧的源漏区；
位于所述沟道区上方的栅极介质层；
位于所述栅极介质层上方的反射涂层；
位于所述反射涂层上方的栅极金属；
覆盖所述栅极金属、有源区和基板的层间介质层；
贯穿所述层间介质层，与所述源漏区表面电连接的金属插塞。
根据本发明的其中一个方面，所述反射涂层对可见光的反射率大于或等于80%。
根据本发明的其中一个方面，所述反射涂层为具有镜面结构的金属。
根据本发明的其中一个方面，所述反射涂层为镜面银或镜面铝。
 有益效果
本发明通过在侧发光式液晶显示屏的薄膜晶体管的不透光区（即栅极金属）下方形成具有高反射率的反光涂层，能够将绝大部分射向栅极金属的光线反射回下方的背光反射板，经过二次反射以后射向发光区，而不是被不透光区吸收，避免了光线损失。本发明通过提高液晶显示屏的薄膜晶体管的不透光区的反射率，从而提高了液晶显示屏的透光率，改善了液晶显示屏的性能。
 附图说明
图1为现有技术中的侧发光式液晶显示屏的结构示意图；
图2为本发明的一个实施例中的侧发光式液晶显示屏的结构示意图；
图3为本发明的一个实施例中的薄膜晶体管的制作方法的流程图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
首先对现有技术进行简要说明。
参见图1，图1为现有技术中的侧发光式液晶显示屏的结构示意图，所述液晶显示屏包括背光反射板10、薄膜晶体管层20、侧面背光源30、彩膜层40和封装层50。
所述背光反射板10对可见光的反射率大于90%，在本实施例中，所述背光反射板10为具有晶面结构的金属银或金属铝，其中晶面结构的金属银对光线的反射率大于99%，能够最大程度的减小光线损失。
所述薄膜晶体管层20包括基板210、位于基板210上方的有源区220、位于有源区220上方的栅极介质层230、位于栅极介质层230上方的栅极金属240、覆盖所述栅极金属240和有源区220的层间介质层250、贯穿所述层间介质层250与所述有源区电连接的源漏金属层270，以及覆盖所述栅极介质层250和源漏金属层270的像素定义层260。
其中，所述有源区220中具有位于所述有源区220中央的沟道区和位于所述沟道区两侧的源漏区。所述栅极介质层230和栅极金属240位于所述沟道区上方。
所述彩膜层40位于所述像素定义层260上方。其中，薄膜晶体管层20和所述彩膜层40中还设置有液晶层（图中未示出）。所述和封装层50位于所述彩膜层40上方。优选的，所述封装层50集成有触控元件，可实现触控功能。
所述侧面背光源30位于背光反射板10和薄膜晶体管层20之间的间隙两侧，将光线投射到所述背光反射板10上。光线通过背光反射板10的反射后射向薄膜晶体管层20，实现背光作用。
在薄膜晶体管层20中，所述栅极金属通常为铝或钼，是不透光的。因此，反射光线一部分直接穿透薄膜晶体管层20的透光区域，照亮上层的液晶和彩膜层40，如光线A；另一部分射向薄膜晶体管层20的不透光区域的光线则会被金属层遮挡，无法到达上层的液晶和彩膜层40，如光线B。通常，金属具有一定的反光性，能够将光线反射回背光反射板，经背光反射板反射后重新射向薄膜晶体管层，如光线C。但是，现有技术中的栅极金属层对光线的反射能力只有不到20%，大量射向栅极金属层的光线无法被反射，从而降低了液晶显示屏的穿透率，影响产品质量。
因此，本发明提供了一种薄膜晶体管、薄膜晶体管的制作方法和液晶显示屏，以提高液晶显示屏的光线穿透率。参见图2，图2为本发明的一个实施例中的侧发光式液晶显示屏的结构示意图。所述液晶显示屏包括背光反射板10、薄膜晶体管层20、侧面背光源30、彩膜层40和封装层50。
区别于图1中现有技术中的侧发光式液晶显示屏，所述薄膜晶体管20包括：基板210；位于所述基板210上方的有源区220；位于所述有源区220中心的沟道区；位于所述沟道区两侧的源漏区；位于所述沟道区上方的栅极介质层230；位于所述栅极介质层上方的反射涂层242；位于所述反射涂层上方的栅极金属240；覆盖所述栅极金属240、有源区220和基板210的层间介质层250；贯穿所述层间介质层250，与所述源漏区表面电连接的金属插塞270，以及覆盖所述栅极介质层250和源漏金属层270的像素定义层260。
在本实施例中，所述反射涂层242对可见光的反射率大于或等于80%。优选的，所述反射涂层为具有镜面结构的金属。所述反射涂层为镜面银或镜面铝。
相应的，参见图1和图3，图3为本发明的一个实施例中的薄膜晶体管的制作方法的流程图。本发明还提供了一种薄膜晶体管20的制作方法，其中，所述方法包括以下步骤：
S1、提供基板210；
S2、形成位于所述基板210上方的有源区220；
S3、形成位于所述有源区220中心的沟道区；
S4、形成位于所述沟道区两侧的源漏区；
S5、形成位于所述沟道区上方的栅极介质层230；
S6、形成位于所述栅极介质层230上方的反射涂层242；
S7、形成位于所述反射涂层242上方的栅极金属240；
S8、形成覆盖所述栅极金属240、有源220和基板210的层间介质层250；
S9、形成贯穿所述层间介质层250，与所述源漏区表面电连接的金属插塞270。
在本实施例中，所述反射涂层242对可见光的反射率大于或等于80%。优选的，所述反射涂层为具有镜面结构的金属。所述反射涂层为镜面银或镜面铝。
具体的，在本实施例中，步骤S5中，形成位于所述沟道区上方的栅极介质层230的方法包括：在沟道区上方形成牺牲介质层，所述牺牲介质层的材质为氧化硅或氮化硅，所述牺牲介质层的厚度大于或等于所述栅极介质层的厚度的两倍；采用化学机械抛光对所述牺牲介质层进行打磨和抛光，去除部分所述牺牲介质层，使剩余的牺牲介质层的厚度等于所述栅极介质层的厚度，形成所述栅极介质层；其中，所述栅极介质层的表面为抛光表面。
采用化学机械抛光的方法形成栅极介质层230，能够使栅极介质层230具有平滑的表面，有利于在栅极介质层230上方形成具有镜面结构的反射涂层242，有利于进一步提高反射涂层242的反光率。
在本实施例中，在步骤S6中，形成位于所述栅极介质层230上方的反射涂层242的方法为：通过电镀在所述抛光表面上形成具有镜面结构的金属。通过电镀的方法能够使金属层表面为平滑的镜面，增强其反光率。在本实施例中，所述反射涂层为镜面银或镜面铝。
相应的，本发明还提供了一种液晶显示屏，其中，所述液晶显示屏包括薄膜晶体管阵列，所述薄膜晶体管阵列包括多个彼此电连接的薄膜晶体管，其中，所述薄膜晶体管包括：基板210；位于所述基板210上方的有源区220；位于所述有源区220中心的沟道区；位于所述沟道区两侧的源漏区；位于所述沟道区上方的栅极介质层230；位于所述栅极介质层上方的反射涂层242；位于所述反射涂层上方的栅极金属240；覆盖所述栅极金属240、有源区220和基板210的层间介质层250；贯穿所述层间介质层250，与所述源漏区表面电连接的金属插塞270，以及覆盖所述栅极介质层250和源漏金属层270的像素定义层260。
本发明通过在侧发光式液晶显示屏的薄膜晶体管的不透光区（即栅极金属）下方形成具有高反射率的反光涂层，能够将绝大部分射向栅极金属的光线反射回下方的背光反射板，经过二次反射以后射向发光区，而不是被不透光区吸收，避免了光线损失。本发明通过提高液晶显示屏的薄膜晶体管的不透光区的反射率，从而提高了液晶显示屏的透光率，改善了液晶显示屏的性能。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (13)

  1. 一种薄膜晶体管，其包括：
    基板；
    位于所述基板上方的有源区；
    位于所述有源区中心的沟道区；
    位于所述沟道区两侧的源漏区；
    位于所述沟道区上方的栅极介质层；
    位于所述栅极介质层上方的反射涂层；
    位于所述反射涂层上方的栅极金属；
    覆盖所述栅极金属、有源区和基板的层间介质层；
    贯穿所述层间介质层，与所述源漏区表面电连接的金属插塞。
  2. 根据权利要求1所述的薄膜晶体管，其中，所述反射涂层对可见光的反射率大于或等于80%。
  3. 根据权利要求2所述的薄膜晶体管，其中，所述反射涂层为具有镜面结构的金属。
  4. 根据权利要求3所述的薄膜晶体管，其中，所述反射涂层为镜面银或镜面铝。
  5. 一种薄膜晶体管的制作方法，其包括以下步骤：
    提供基板；
    形成位于所述基板上方的有源区；
    形成位于所述有源区中心的沟道区；
    形成位于所述沟道区两侧的源漏区；
    形成位于所述沟道区上方的栅极介质层；
    形成位于所述栅极介质层上方的反射涂层；
    形成位于所述反射涂层上方的栅极金属；
    形成覆盖所述栅极金属、有源区和基板的层间介质层；
    形成贯穿所述层间介质层，与所述源漏区表面电连接的金属插塞。
  6. 根据权利要求5所述的薄膜晶体管的制作方法，其中，形成位于所述沟道区上方的栅极介质层的方法包括：
    在沟道区上方形成牺牲介质层，所述牺牲介质层的材质为氧化硅或氮化硅，所述牺牲介质层的厚度大于或等于所述栅极介质层的厚度的两倍；
    采用化学机械抛光对所述牺牲介质层进行打磨和抛光，去除部分所述牺牲介质层，使剩余的牺牲介质层的厚度等于所述栅极介质层的厚度，形成所述栅极介质层；其中，
    所述栅极介质层的表面为抛光表面。
  7. 根据权利要求6所述的薄膜晶体管的制作方法，其中，所述反射涂层对可见光的反射率大于或等于80%。
  8. 根据权利要求7所述的薄膜晶体管的制作方法，其中，所述反射涂层为具有镜面结构的金属，其中，形成位于所述栅极介质层上方的反射涂层的方法为：
    通过电镀在所述抛光表面上形成具有镜面结构的金属。
  9. 根据权利要求8所述的薄膜晶体管的制作方法，其中，所述反射涂层为镜面银或镜面铝。
  10. 一种液晶显示屏，其包括薄膜晶体管阵列，所述薄膜晶体管阵列包括多个彼此电连接的薄膜晶体管，所述薄膜晶体管包括：
    基板；
    位于基板上方的有源区；
    位于所述有源区中心的沟道区；
    位于所述沟道区两侧的源漏区；
    位于所述沟道区上方的栅极介质层；
    位于所述栅极介质层上方的反射涂层；
    位于所述反射涂层上方的栅极金属；
    覆盖所述栅极金属、有源区和基板的层间介质层；
    贯穿所述层间介质层，与所述源漏区表面电连接的金属插塞。
  11. 根据权利要求10所述的液晶显示屏，其中，所述反射涂层对可见光的反射率大于或等于80%。
  12. 根据权利要求11所述的液晶显示屏，其中，所述反射涂层为具有镜面结构的金属。
  13. 根据权利要求12所述的液晶显示屏，其中，所述反射涂层为镜面银或镜面铝。
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