CN109659371B - 薄膜晶体管、薄膜晶体管的制作方法和液晶显示屏 - Google Patents
薄膜晶体管、薄膜晶体管的制作方法和液晶显示屏 Download PDFInfo
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Abstract
本发明提供一种薄膜晶体管、薄膜晶体管的制作方法和液晶显示屏。所述薄膜晶体管包括:基板;位于所述基板上方的有源区;于所述有源区中心的沟道区;位于所述沟道区两侧的源漏区;位于所述沟道区上方的栅极介质层;位于所述栅极介质层上方的反射涂层;位于所述反射涂层上方的栅极金属;覆盖所述栅极金属、有源区和基板的层间介质层;贯穿所述层间介质层,与所述源漏区表面电连接的金属插塞。本发明通过提高液晶显示屏的薄膜晶体管的不透光区的反射率,从而提高了液晶显示屏的透光率,改善了液晶显示屏的性能。
Description
技术领域
本发明涉及电子显示领域,尤其涉及一种薄膜晶体管、薄膜晶体管的制作方法和液晶显示屏。
背景技术
随着液晶显示技术的发展,为了优化液晶显示屏的外观,液晶显示屏的厚度越来越薄。为了进一步减小液晶显示屏的厚度,侧发光液晶显示屏逐渐取代了底发光液晶显示屏成为主流显示屏。在侧发光液晶显示屏中,背光源位于液晶显示屏的两侧,液晶显示屏下方设置有背光反射板,侧光源发出的光线经背光反射板反射后射向液晶显示屏,成为液晶显示屏的背光源。
在液晶显示屏中,其透光率是决定液晶显示屏质量的重要参数。在侧发光液晶显示屏中,位于背光反射板正上方的薄膜晶体管层大部分结构是透光的,但是其中的栅极金属层多由铝或钼形成,是不透光的。因此,背光发射板反射向液晶显示屏的光线一部分直接穿透薄膜晶体管层的透光区域,照亮上层的液晶和彩膜层;另一部分射向薄膜晶体管层的不透光区域的光线则会被金属层遮挡,无法到达上层的液晶和彩膜层。通常,金属具有一定的反光性,能够将光线反射回背光反射板,经背光反射板反射后重新射向薄膜晶体管层。但是,现有技术中的栅极金属层对光线的反射能力只有不到20%,大量射向栅极金属层的光线无法被反射,从而降低了液晶显示屏的穿透率,影响产品质量。
发明内容
本发明提供一种薄膜晶体管、薄膜晶体管的制作方法和液晶显示屏,以提高液晶显示屏的光线穿透率。
具体的,本发明提供了一种薄膜晶体管,所述薄膜晶体管包括:
基板;
位于所述基板上方的有源区;
位于所述有源区中心的沟道区;
位于所述沟道区两侧的源漏区;
位于所述沟道区上方的栅极介质层;
位于所述栅极介质层上方的反射涂层;
位于所述反射涂层上方的栅极金属;
覆盖所述栅极金属、有源区和基板的层间介质层;
贯穿所述层间介质层,与所述源漏区表面电连接的金属插塞。
根据本发明的其中一个方面,所述反射涂层对可见光的反射率大于或等于80%。
根据本发明的其中一个方面,所述反射涂层为具有镜面结构的金属。
根据本发明的其中一个方面,所述反射涂层为镜面银、镜面铝。
相应的,本发明还提供了一种薄膜晶体管的制作方法,其特征在于,所述方法包括以下步骤:
提供基板;
形成位于所述基板上方的有源区;
形成位于所述有源区中心的沟道区;
形成位于所述沟道区两侧的源漏区;
形成位于所述沟道区上方的栅极介质层;
形成位于所述栅极介质层上方的反射涂层;
形成位于所述反射涂层上方的栅极金属;
形成覆盖所述栅极金属、有源区和基板的层间介质层;
形成贯穿所述层间介质层,与所述源漏区表面电连接的金属插塞。
根据本发明的其中一个方面,形成位于所述沟道区上方的栅极介质层的方法包括:
在沟道区上方形成牺牲介质层,所述牺牲介质层的材质为氧化硅或氮化硅,所述牺牲介质层的厚度大于或等于所述栅极介质层的厚度的两倍;
采用化学机械抛光对所述牺牲介质层进行打磨和抛光,去除部分所述牺牲介质层,使剩余的牺牲介质层的厚度等于所述栅极介质层的厚度,形成所述栅极介质层;其中,
所述栅极介质层的表面为抛光表面。
根据本发明的其中一个方面,所述反射涂层对可见光的反射率大于或等于80%。
根据本发明的其中一个方面,所述反射涂层为具有镜面结构的金属,其中,形成位于所述栅极介质层上方的反射涂层的方法为:
通过电镀在所述抛光表面上形成具有镜面结构的金属。
根据本发明的其中一个方面,所述反射涂层为镜面银、镜面铝。
相应的,本发明还提供了一种液晶显示屏,其特征在于,所述液晶显示屏包括薄膜晶体管阵列,所述薄膜晶体管阵列包括多个彼此电连接的薄膜晶体管,所述薄膜晶体管包括:
基板;
位于基板上方的有源区;
位于所述有源区中心的沟道区;
位于所述沟道区两侧的源漏区;
位于所述沟道区上方的栅极介质层;
位于所述栅极介质层上方的反射涂层;
位于所述反射涂层上方的栅极金属;
覆盖所述栅极金属、有源区和基板的层间介质层;
贯穿所述层间介质层,与所述源漏区表面电连接的金属插塞。
本发明通过在侧发光式液晶显示屏的薄膜晶体管的不透光区(即栅极金属)下方形成具有高反射率的反光涂层,能够将绝大部分射向栅极金属的光线反射回下方的背光反射板,经过二次反射以后射向发光区,而不是被不透光区吸收,避免了光线损失。本发明通过提高液晶显示屏的薄膜晶体管的不透光区的反射率,从而提高了液晶显示屏的透光率,改善了液晶显示屏的性能。
附图说明
图1为现有技术中的侧发光式液晶显示屏的结构示意图;
图2为本发明的一个实施例中的侧发光式液晶显示屏的结构示意图;
图3为本发明的一个实施例中的薄膜晶体管的制作方法的流程图。
具体实施方式
以下各实施例的说明是参考附加的图示,用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本发明,而非用以限制本发明。在图中,结构相似的单元是用以相同标号表示。
首先对现有技术进行简要说明。
参见图1,图1为现有技术中的侧发光式液晶显示屏的结构示意图,所述液晶显示屏包括背光反射板10、薄膜晶体管层20、侧面背光源30、彩膜层40和封装层50。
所述背光反射板10对可见光的反射率大于90%,在本实施例中,所述背光反射板10为具有晶面结构的金属银或金属铝,其中晶面结构的金属银对光线的反射率大于99%,能够最大程度的减小光线损失。
所述薄膜晶体管层20包括基板210、位于基板210上方的有源区220、位于有源区220上方的栅极介质层230、位于栅极介质层230上方的栅极金属240、覆盖所述栅极金属240和有源区220的层间介质层250、贯穿所述层间介质层250与所述有源区电连接的源漏金属层270,以及覆盖所述栅极介质层250和源漏金属层270的像素定义层260。
其中,所述有源区220中具有位于所述有源区220中央的沟道区和位于所述沟道区两侧的源漏区。所述栅极介质层230和栅极金属240位于所述沟道区上方。
所述彩膜层40位于所述像素定义层260上方。其中,薄膜晶体管层20和所述彩膜层40中还设置有液晶层(图中未示出)。所述和封装层50位于所述彩膜层40上方。优选的,所述封装层50集成有触控元件,可实现触控功能。
所述侧面背光源30位于背光反射板10和薄膜晶体管层20之间的间隙两侧,将光线投射到所述背光反射板10上。光线通过背光反射板10的反射后射向薄膜晶体管层20,实现背光作用。
在薄膜晶体管层20中,所述栅极金属通常为铝或钼,是不透光的。因此,反射光线一部分直接穿透薄膜晶体管层20的透光区域,照亮上层的液晶和彩膜层40,如光线A;另一部分射向薄膜晶体管层20的不透光区域的光线则会被金属层遮挡,无法到达上层的液晶和彩膜层40,如光线B。通常,金属具有一定的反光性,能够将光线反射回背光反射板,经背光反射板反射后重新射向薄膜晶体管层,如光线C。但是,现有技术中的栅极金属层对光线的反射能力只有不到20%,大量射向栅极金属层的光线无法被反射,从而降低了液晶显示屏的穿透率,影响产品质量。
因此,本发明提供了一种薄膜晶体管、薄膜晶体管的制作方法和液晶显示屏,以提高液晶显示屏的光线穿透率。参见图2,图2为本发明的一个实施例中的侧发光式液晶显示屏的结构示意图。所述液晶显示屏包括背光反射板10、薄膜晶体管层20、侧面背光源30、彩膜层40和封装层50。
区别于图1中现有技术中的侧发光式液晶显示屏,所述薄膜晶体管20包括:基板210;位于所述基板210上方的有源区220;位于所述有源区220中心的沟道区;位于所述沟道区两侧的源漏区;位于所述沟道区上方的栅极介质层230;位于所述栅极介质层上方的反射涂层242;位于所述反射涂层上方的栅极金属240;覆盖所述栅极金属240、有源区220和基板210的层间介质层250;贯穿所述层间介质层250,与所述源漏区表面电连接的金属插塞270,以及覆盖所述栅极介质层250和源漏金属层270的像素定义层260。
在本实施例中,所述反射涂层242对可见光的反射率大于或等于80%。优选的,所述反射涂层为具有镜面结构的金属。所述反射涂层为镜面银、镜面铝。
相应的,参见图1和图3,图3为本发明的一个实施例中的薄膜晶体管的制作方法的流程图。本发明还提供了一种薄膜晶体管20的制作方法,其特征在于,所述方法包括以下步骤:
S1、提供基板210;
S2、形成位于所述基板210上方的有源区220;
S3、形成位于所述有源区220中心的沟道区;
S4、形成位于所述沟道区两侧的源漏区;
S5、形成位于所述沟道区上方的栅极介质层230;
S6、形成位于所述栅极介质层230上方的反射涂层242;
S7、形成位于所述反射涂层242上方的栅极金属240;
S8、形成覆盖所述栅极金属240、有源220和基板210的层间介质层250;
S9、形成贯穿所述层间介质层250,与所述源漏区表面电连接的金属插塞270。
在本实施例中,所述反射涂层242对可见光的反射率大于或等于80%。优选的,所述反射涂层为具有镜面结构的金属。所述反射涂层为镜面银、镜面铝。
具体的,在本实施例中,步骤S5中,形成位于所述沟道区上方的栅极介质层230的方法包括:在沟道区上方形成牺牲介质层,所述牺牲介质层的材质为氧化硅或氮化硅,所述牺牲介质层的厚度大于或等于所述栅极介质层的厚度的两倍;采用化学机械抛光对所述牺牲介质层进行打磨和抛光,去除部分所述牺牲介质层,使剩余的牺牲介质层的厚度等于所述栅极介质层的厚度,形成所述栅极介质层;其中,所述栅极介质层的表面为抛光表面。
采用化学机械抛光的方法形成栅极介质层230,能够使栅极介质层230具有平滑的表面,有利于在栅极介质层230上方形成具有镜面结构的反射涂层242,有主题进一步提高反射涂层242的反光率。
在本实施例中,在步骤S6中,形成位于所述栅极介质层230上方的反射涂层242的方法为:通过电镀在所述抛光表面上形成具有镜面结构的金属。通过电镀的方法能够使金属层表面为平滑的镜面,增强其反光率。在本实施例中,所述反射涂层为镜面银、镜面铝。
相应的,本发明还提供了一种液晶显示屏,其特征在于,所述液晶显示屏包括薄膜晶体管阵列,所述薄膜晶体管阵列包括多个彼此电连接的薄膜晶体管,其特征在于,所述薄膜晶体管包括:基板210;位于所述基板210上方的有源区220;位于所述有源区220中心的沟道区;位于所述沟道区两侧的源漏区;位于所述沟道区上方的栅极介质层230;位于所述栅极介质层上方的反射涂层242;位于所述反射涂层上方的栅极金属240;覆盖所述栅极金属240、有源区220和基板210的层间介质层250;贯穿所述层间介质层250,与所述源漏区表面电连接的金属插塞270,以及覆盖所述栅极介质层250和源漏金属层270的像素定义层260。
本发明通过在侧发光式液晶显示屏的薄膜晶体管的不透光区(即栅极金属)下方形成具有高反射率的反光涂层,能够将绝大部分射向栅极金属的光线反射回下方的背光反射板,经过二次反射以后射向发光区,而不是被不透光区吸收,避免了光线损失。本发明通过提高液晶显示屏的薄膜晶体管的不透光区的反射率,从而提高了液晶显示屏的透光率,改善了液晶显示屏的性能。
综上所述,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (10)
1.一种薄膜晶体管,其特征在于,所述薄膜晶体管包括:
基板;
位于所述基板上方的有源区;
位于所述有源区中心的沟道区;
位于所述沟道区两侧的源漏区;
位于所述沟道区上方的栅极介质层,所述栅极介质层的表面为抛光表面;
位于所述栅极介质层上方的反射涂层;
位于所述反射涂层上方的栅极金属;
覆盖所述栅极金属、有源区和基板的层间介质层;
贯穿所述层间介质层,与所述源漏区表面电连接的金属插塞。
2.根据权利要求1所述的薄膜晶体管,其特征在于,所述反射涂层对可见光的反射率大于或等于80%。
3.根据权利要求2所述的薄膜晶体管,其特征在于,所述反射涂层为具有镜面结构的金属。
4.根据权利要求3所述的薄膜晶体管,其特征在于,所述反射涂层为镜面银、镜面铝。
5.一种薄膜晶体管的制作方法,其特征在于,所述方法包括以下步骤:
提供基板;
形成位于所述基板上方的有源区;
形成位于所述有源区中心的沟道区;
形成位于所述沟道区两侧的源漏区;
形成位于所述沟道区上方的栅极介质层;
形成位于所述栅极介质层上方的反射涂层;
形成位于所述反射涂层上方的栅极金属;
形成覆盖所述栅极金属、有源区和基板的层间介质层;
形成贯穿所述层间介质层,与所述源漏区表面电连接的金属插塞。
6.根据权利要求5所述的薄膜晶体管的制作方法,其特征在于,形成位于所述沟道区上方的栅极介质层的方法包括:
在沟道区上方形成牺牲介质层,所述牺牲介质层的材质为氧化硅或氮化硅,所述牺牲介质层的厚度大于或等于所述栅极介质层的厚度的两倍;
采用化学机械抛光对所述牺牲介质层进行打磨和抛光,去除部分所述牺牲介质层,使剩余的牺牲介质层的厚度等于所述栅极介质层的厚度,形成所述栅极介质层;其中,
所述栅极介质层的表面为抛光表面。
7.根据权利要求6所述的薄膜晶体管的制作方法,其特征在于,所述反射涂层对可见光的反射率大于或等于80%。
8.根据权利要求7所述的薄膜晶体管的制作方法,其特征在于,所述反射涂层为具有镜面结构的金属,其中,形成位于所述栅极介质层上方的反射涂层的方法为:
通过电镀在所述抛光表面上形成具有镜面结构的金属。
9.根据权利要求8所述的薄膜晶体管的制作方法,其特征在于,所述反射涂层为镜面银、镜面铝。
10.一种液晶显示屏,其特征在于,所述液晶显示屏包括薄膜晶体管阵列,所述薄膜晶体管阵列包括多个彼此电连接的薄膜晶体管,所述薄膜晶体管包括:
基板;
位于基板上方的有源区;
位于所述有源区中心的沟道区;
位于所述沟道区两侧的源漏区;
位于所述沟道区上方的栅极介质层,所述栅极介质层的表面为抛光表面;
位于所述栅极介质层上方的反射涂层;
位于所述反射涂层上方的栅极金属;
覆盖所述栅极金属、有源区和基板的层间介质层;
贯穿所述层间介质层,与所述源漏区表面电连接的金属插塞。
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