WO2020116275A1 - Feuille composite formant un film de protection et procédé de fabrication de puce semi-conductrice - Google Patents

Feuille composite formant un film de protection et procédé de fabrication de puce semi-conductrice Download PDF

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Publication number
WO2020116275A1
WO2020116275A1 PCT/JP2019/046354 JP2019046354W WO2020116275A1 WO 2020116275 A1 WO2020116275 A1 WO 2020116275A1 JP 2019046354 W JP2019046354 W JP 2019046354W WO 2020116275 A1 WO2020116275 A1 WO 2020116275A1
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Prior art keywords
protective film
forming
film
composite sheet
antistatic
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PCT/JP2019/046354
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English (en)
Japanese (ja)
Inventor
山本　大輔
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リンテック株式会社
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Priority to CN201980072649.5A priority Critical patent/CN112956014A/zh
Priority to KR1020217010720A priority patent/KR20210098950A/ko
Priority to JP2020559100A priority patent/JP7292308B2/ja
Publication of WO2020116275A1 publication Critical patent/WO2020116275A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/02—Physical, chemical or physicochemical properties
    • B32B7/025—Electric or magnetic properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68377—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support with parts of the auxiliary support remaining in the finished device

Definitions

  • the present invention relates to a protective film forming composite sheet and a method for manufacturing a semiconductor chip.
  • the present application claims priority based on Japanese Patent Application No. 2018-228524 filed in Japan on December 5, 2018, the contents of which are incorporated herein by reference.
  • semiconductor devices have been manufactured using a mounting method called a so-called face down method.
  • a semiconductor chip having electrodes such as bumps on the circuit formation surface is used, and the electrodes are bonded to the substrate. Therefore, the surface (back surface) of the semiconductor chip opposite to the circuit formation surface may be exposed.
  • a resin film containing an organic material is formed as a protective film on the exposed back surface of the semiconductor chip, and it may be incorporated into a semiconductor device as a semiconductor chip with a protective film.
  • the protective film is used to prevent cracks from being generated in the semiconductor chip after the dicing process or packaging.
  • a protective film-forming composite sheet configured by including a protective film forming film for forming a protective film on a support sheet.
  • the protective film forming film can form a protective film by curing.
  • the support sheet can be used for fixing the semiconductor wafer when the semiconductor wafer having the protective film forming film or the protective film on the back surface is divided into semiconductor chips.
  • the support sheet can also be used as a dicing sheet, and the protective film-forming composite sheet can also be used as an integrated body of the protective film-forming film and the dicing sheet.
  • the composite sheet for forming a protective film is used as follows. That is, first, the protective film-forming film in the protective film-forming composite sheet is attached to the back surface of the semiconductor wafer to obtain a laminate (hereinafter abbreviated as “pre-division laminate”).
  • the protective film forming film in the pre-division laminate is cured to form a protective film, the semiconductor wafer is divided, the protective film is cut, and the protective film after cutting and the divided after the dividing on the support sheet.
  • a semiconductor wafer (that is, a semiconductor chip) is obtained in this order to obtain a laminated body.
  • the semiconductor wafer is divided, the protective film-forming film is cut, and on a support sheet, A laminated body including the protective film-forming film after cutting and the semiconductor chip in this order is obtained.
  • a semiconductor chip having a cut protective film on the back surface or a semiconductor chip having a cut protective film forming film on the back surface (semiconductor chip with protective film forming film) , Separate from the support sheet and pick up.
  • the cut protective film forming film is cured at any stage to form a protective film.
  • the circuits in the semiconductor chip may be destroyed due to the influence of static electricity.
  • the semiconductor chip with a protective film or the semiconductor chip with a film for forming a protective film is separated from the support sheet and picked up, the amount of charge is likely to be particularly large, and the circuit is particularly likely to be broken.
  • a semiconductor processing sheet that suppresses peeling electrification a dicing tape (corresponding to the support sheet) in which an adhesive layer is laminated on a base material, and an adhesive sheet formed on the adhesive layer And a dicing tape-integrated adhesive sheet, wherein the absolute value of the peeling electrification voltage when the pressure-sensitive adhesive layer and the adhesive sheet are peeled off is 0.5 kV or less.
  • Patent Document 1 by using this dicing tape-integrated adhesive sheet, a semiconductor chip provided with an adhesive sheet on the back surface is separated from the dicing tape, that is, when so-called pickup is performed, a gap between the adhesive sheet and the dicing tape is obtained. It is said that it is possible to suppress peeling electrification, suppress generation of static electricity, and suppress damage to a circuit on a semiconductor chip due to the static electricity.
  • a protective film forming film is provided on a support sheet, a semiconductor wafer is provided on the protective film forming film, and a modified layer is formed inside the semiconductor wafer.
  • a laminated structure forming step of forming a laminated structure and after the laminated structure forming step, the laminated structure is expanded in the surface direction of the protective film forming film, and the protective film forming film is cut.
  • a method of manufacturing a semiconductor chip with a protective film which comprises a protective film forming step of obtaining a semiconductor chip with a protective film.
  • Patent Document 3 Using a dicing blade, a semiconductor wafer, a protective film-forming film, and a support sheet laminated body, after dicing the semiconductor wafer and the protective film-forming film, the supporting sheet is expanded and picked up. It is known (Patent Document 3).
  • Expanding process is a process that puts a large load on the semiconductor processing tape in the process of manufacturing semiconductor chips.
  • the protective film after the cutting or the protective film for forming a protective film in the divided laminated body when an expanding step is performed. It is not clear whether the semiconductor chip provided with the film can be prevented from being damaged by electrification of the circuit in the semiconductor chip when the semiconductor chip is picked up from the support sheet.
  • the present invention is a composite sheet for forming a protective film comprising a supporting sheet and a film for forming a protective film, obtained using the supporting sheet, and a protective film after cutting or a film for forming a protective film.
  • a semiconductor chip in a divided laminated body constituted by laminating in this order, the semiconductor chip provided with the protective film after cutting or a film for forming a protective film, when picking up from the support sheet, Even if the divided laminated body is obtained through an expanding step, a protective film-forming composite sheet capable of suppressing destruction of the circuit in the semiconductor chip due to electrification, and a semiconductor using the protective film-forming composite sheet
  • An object of the present invention is to provide a chip manufacturing method.
  • the present invention is a composite sheet for forming a protective film, comprising a supporting sheet and a film for forming a protective film formed on one surface of the supporting sheet, the composite sheet for forming a protective film,
  • the film for forming a protective film is placed on a table and attached to an 8-inch ring frame, and the table is pushed up under conditions of a temperature of 23° C. and a pushing speed of 10 mm/sec and a lifting height of 20 mm.
  • the composite sheet for forming a protective film, in which the surface resistivity of the outermost layer on the side of the supporting sheet in the composite sheet for forming a protective film after expanding in the surface direction is 1.0 ⁇ 10 11 ⁇ / ⁇ or less. I will provide a.
  • the protective film-forming film is curable, and the surface resistivity after curing the protective film-forming film in the protective film-forming composite sheet. Is preferably 1.0 ⁇ 10 11 ⁇ / ⁇ or less.
  • the support sheet comprises a substrate, and an antistatic layer formed on one surface or both surfaces of the substrate, or The support sheet preferably includes a base material having antistatic properties as an antistatic layer.
  • the thickness of the antistatic layer formed on one surface or both surfaces of the substrate is 100 nm or less.
  • a flannel cloth is covered on the pressing surface of the pressing means having a planar pressing surface having an area of 2 cm ⁇ 2 cm, and the pressing surface covered with the flannel cloth is It is pressed against the surface of the antistatic layer, and in this state, the pressing means applies a load of 125 g/cm 2 to the antistatic layer and presses it, and the pressing means reciprocates 10 times at a linear distance of 10 cm.
  • the total light transmittance of the support sheet is preferably 80% or more.
  • the present invention a step of attaching the protective film forming film in the protective film forming composite sheet to a semiconductor wafer to produce a pre-division laminate, Curing the protective film forming film after being attached to the semiconductor wafer to form a protective film; Irradiating the inside of the semiconductor wafer with laser light to form a modified layer inside the semiconductor wafer;
  • the semiconductor wafer is divided by expanding the undivided laminate in which the protective film or the protective film-forming film is attached and the modified layer is formed inside the semiconductor wafer, and the protective film or the protective film is formed.
  • a film for cutting, a support sheet, and the protective film or protective film-forming film after cutting provided on one surface of the supporting sheet, and the protective film or protective film-forming film after cutting A step of producing a divided laminated body including a plurality of semiconductor chips provided on the surface opposite to the support sheet side, A method of manufacturing a semiconductor chip, comprising: separating the semiconductor chip provided with the protective film after cutting or the film for forming a protective film in the divided laminated body from the support sheet and picking it up.
  • the present invention comprises a step of attaching the protective film forming film in the protective film forming composite sheet to a semiconductor wafer to prepare a pre-division laminate, Curing the protective film forming film after being attached to the semiconductor wafer to form a protective film;
  • the semiconductor wafer is divided, the protective film or the protective film-forming film is cut, and a protective sheet or the protective film or the protective-film forming film provided on one surface of the supporting sheet and the supporting sheet is cut.
  • a method of manufacturing a semiconductor chip comprising the step of separating the semiconductor chip provided with the protective film after cutting or the film for forming a protective film in the divided laminated body from the support sheet and picking it up.
  • a composite sheet for forming a protective film comprising a supporting sheet and a film for forming a protective film, which is obtained by using the supporting sheet and a protective film after cutting or for forming a protective film.
  • a semiconductor chip having a protective film after cutting or a film for forming a protective film in a divided laminated body formed by laminating a film and a semiconductor chip in this order is separated from the support sheet and picked up.
  • a protective film-forming composite sheet capable of suppressing destruction of a circuit in a semiconductor chip due to electrification, and the protective film-forming composite sheet A method of manufacturing a semiconductor chip using the above is provided.
  • FIG. 6 is a cross-sectional view for schematically explaining the method for manufacturing a semiconductor chip according to the embodiment of the present invention.
  • FIG. 6 is a cross-sectional view for schematically explaining the method for manufacturing a semiconductor chip according to the embodiment of the present invention.
  • FIG. 6 is a cross-sectional view for schematically explaining the method for manufacturing a semiconductor chip according to the embodiment of the present invention.
  • FIG. 6 is a cross-sectional view for schematically explaining the method for manufacturing a semiconductor chip according to the embodiment of the present invention.
  • FIG. 6 is a cross-sectional view for schematically explaining the method for manufacturing a semiconductor chip according to the embodiment of the present invention.
  • a composite sheet for forming a protective film according to an embodiment of the present invention includes a support sheet, and a film for forming a protective film formed on one surface of the support sheet, A composite sheet for forming a protective film, The composite sheet for forming a protective film is placed on a table and attached to an 8-inch ring frame, and the table is pushed up under conditions of a temperature of 23° C. and a pushing speed of 10 mm/sec and a lifting height of 20 mm.
  • the surface resistivity of the outermost layer on the support sheet side in the protective film-forming composite sheet after the protective film-forming film is expanded in the surface direction is 1.0 ⁇ 10 11 ⁇ / ⁇ . It is below.
  • the protective film-forming composite sheet is obtained by using the protective film-forming composite sheet, in which the surface resistivity after expanding under the conditions is 1.0 ⁇ 10 11 ⁇ / ⁇ or less.
  • the protective film after cutting or for forming the protective film is separated from the support sheet and picked up, even if the divided laminated body is obtained through an expanding step, it is possible to suppress damage due to electrification of a circuit in the semiconductor chip. ..
  • the term “surface resistivity of the protective film-forming composite sheet” means the surface resistivity of the outermost layer on the supporting sheet side in the above-mentioned protective film-forming composite sheet, unless otherwise specified.
  • the "destruction of the circuit in the semiconductor chip” means the destruction of the circuit in the semiconductor chip at the time of the above-mentioned pickup unless otherwise specified.
  • the surface resistivity after expanded under the above conditions is, for example, a layer containing an antistatic agent (in the present specification, may be collectively referred to as “antistatic layer”). It can be adjusted by adjusting the content of the antistatic agent.
  • the surface resistivity of the composite sheet for forming a protective film after expanding under the above conditions is 1.0 ⁇ 10 11 ⁇ / ⁇ or less, preferably 9.5 ⁇ 10 10 ⁇ / ⁇ or less, For example, it may be any of 5.0 ⁇ 10 10 ⁇ / ⁇ or less, 6.0 ⁇ 10 9 ⁇ / ⁇ or less, and 1.0 ⁇ 10 9 ⁇ / ⁇ or less.
  • the surface resistivity is less than or equal to the upper limit value, after the protective film-forming composite sheet is expanded, when the semiconductor chip is separated from the support sheet and picked up, damage due to charging of a circuit in the semiconductor chip is more likely to occur. Can be suppressed.
  • the lower limit of the surface resistivity of the protective film-forming composite sheet after being expanded under the above conditions is preferably as small as possible, and is not particularly limited.
  • the protective film-forming composite sheet having the surface resistivity of 1.0 ⁇ 10 5 ⁇ / ⁇ or more can be more easily manufactured.
  • the surface resistivity of the composite sheet for forming a protective film after expanding under the above conditions can be appropriately adjusted within a range set by arbitrarily combining the preferable lower limit value and the preferable upper limit value described above.
  • the surface resistivity is preferably 1.0 ⁇ 10 5 to 1.0 ⁇ 10 11 ⁇ / ⁇ , and 1.0 ⁇ 10 5 to 9.5 ⁇ 10 10 ⁇ / ⁇ .
  • ⁇ is more preferable, and for example, 1.0 ⁇ 10 5 to 5.0 ⁇ 10 10 ⁇ / ⁇ , 1.0 ⁇ 10 5 to 6.0 ⁇ 10 9 ⁇ / ⁇ , and 1.0 ⁇ 10 It may be any of 5 to 1.0 ⁇ 10 9 ⁇ / ⁇ . However, these are examples of the surface resistivity.
  • the protective film forming film in the protective film forming composite sheet has curability, regardless of whether it is thermosetting or energy ray curable described later, the protective film forming film described above is formed.
  • the surface resistivity after expanded under the conditions may be the surface resistivity before the protective film forming film is cured, or the surface resistance after the protective film forming film is cured. It may be a rate.
  • the composite sheet for forming a protective film, the surface resistivity after expanding under the conditions, as will be described later in Examples, the outermost layer on the side of the supporting sheet in the composite sheet for forming a protective film is a measurement target, It is possible to measure with an applied voltage of 100 V using a surface resistivity meter.
  • the surface resistivity after the curable protective film forming film is cured is a condition of the above-described surface resistivity (for example, an upper limit value of 1.0 ⁇ 10 11 ⁇ / ⁇ or less, a lower limit of 1.0 ⁇ 10 5 ⁇ / ⁇ or more). Value) is preferably satisfied.
  • the protective film-forming composite sheet may be a cured one when the protective film-forming film therein is curable. That is, as one embodiment of such a protective film-forming composite sheet, the surface resistivity of the protective film-forming film in the protective film-forming composite sheet after curing is 1.0 ⁇ 10 11 Those having ⁇ / ⁇ or less can be mentioned.
  • the surface resistivity of the composite film for forming a protective film is the above-mentioned surface resistivity condition (for example, an upper limit value of 1.0 ⁇ 10 11 ⁇ / ⁇ or less, 1.0 ⁇ 10 5 ⁇ / ⁇ or more, etc. It is preferable that the protective film forming composite sheet in this case is one in which the protective film forming film is thermoset at 130° C. for 2 hours.
  • the film for forming a protective film in the composite film for forming a protective film is at 130° C.
  • the surface resistivity after heat-curing for 2 hours is 1.0 ⁇ 10 11 ⁇ / ⁇ or less.
  • the protective film-forming film is thermosetting, after heat-curing the protective film-forming film in the protective film-forming composite sheet, after expanding the protective film-forming composite sheet under the above conditions
  • the surface resistivity of the protective film-forming composite sheet is the above-mentioned surface resistivity condition (for example, an upper limit value of 1.0 ⁇ 10 11 ⁇ / ⁇ or less, 1.0 ⁇ 10 5 ⁇ / ⁇ or more, or the like).
  • the lower limit value is preferably satisfied, and the protective film-forming composite sheet in this case is preferably one in which the protective film-forming film is heat-cured at 130° C. for 2 hours.
  • the surface resistivity after the film for forming a protective film in the composite sheet for forming a protective film is thermoset at 130° C. for 2 hours, Those having a resistance of 1.0 ⁇ 10 11 ⁇ / ⁇ or less are included.
  • the protective film-forming composite sheet in the protective film-forming composite sheet is expanded at an illuminance of 195 mW/ cm 2, the surface resistivity was measured by curing the energy ray light quantity 170 mJ / cm 2 is the surface resistivity of the above conditions (e.g., 1.0 ⁇ 10 11 ⁇ / ⁇ upper limit of such below 1. It is preferable that the lower limit value such as 0 ⁇ 10 5 ⁇ / ⁇ or more) is satisfied.
  • the surface resistivity of the outermost layer on the side of the supporting sheet before the composite sheet for forming a protective film of the present embodiment is expanded is the above-described surface resistivity condition (for example, 1.0 ⁇ 10 11 ⁇ / ⁇ or less). Upper limit value of 1.0 ⁇ 10 5 ⁇ / ⁇ or more) may be satisfied.
  • the surface resistivity before expanding the composite sheet for forming a protective film is preferably 5.0 ⁇ 10 10 ⁇ / ⁇ or less, and for example, 6.0 ⁇ 10 9 It may be either ⁇ / ⁇ or less, 5.0 ⁇ 10 8 ⁇ / ⁇ or less, and 3.0 ⁇ 10 8 ⁇ / ⁇ or less.
  • the surface resistivity before expanding the protective film forming composite sheet is not more than the upper limit value, after expanding the protective film forming composite sheet, when picking up the semiconductor chip by separating from the support sheet, It is possible to further suppress the destruction of the circuit in the semiconductor chip due to electrification, and it is possible to suppress the mixing of foreign matter due to static electricity when the composite sheet for forming a protective film is attached to a wafer.
  • the lower limit of the surface resistivity of the composite sheet for forming a protective film before expanding the composite sheet for forming a protective film is preferably as small as possible, and is not particularly limited.
  • a composite sheet for forming a protective film having a surface resistivity of 1.0 ⁇ 10 5 ⁇ / ⁇ or more before expanding the composite sheet for forming a protective film can be more easily manufactured.
  • the surface resistivity of the composite sheet for forming a protective film before expanding the composite sheet for forming a protective film can be appropriately adjusted within a range set by arbitrarily combining the above-mentioned preferred lower limit value and upper limit value.
  • the surface resistivity before expanding the protective film-forming composite sheet is preferably 1.0 ⁇ 10 5 to 5.0 ⁇ 10 10 ⁇ / ⁇ , for example, 1. 0 ⁇ 10 5 to 6.0 ⁇ 10 9 ⁇ / ⁇ , 1.0 ⁇ 10 5 to 5.0 ⁇ 10 8 ⁇ / ⁇ , and 1.0 ⁇ 10 5 to 3.0 ⁇ 10 8 ⁇ / ⁇ It may be either.
  • these are examples of the surface resistivity before expanding the composite sheet for forming a protective film.
  • the surface resistivity before expanding the protective film-forming composite sheet is the above-described surface resistivity condition (for example, an upper limit value of 1.0 ⁇ 10 11 ⁇ / ⁇ or less, 1.0 ⁇ 10 5 ⁇ / (Lower limit value such as ⁇ or more) may be satisfied, and the surface resistivity after expanding the composite sheet for forming a protective film is the above-mentioned surface resistivity condition (for example, 1.0 ⁇ 10 11 ⁇ / ⁇ or less). And the lower limit of 1.0 ⁇ 10 5 ⁇ / ⁇ or more) may be satisfied.
  • the surface resistivity before the protective film forming film in the protective film forming composite sheet is cured and before the protective film forming composite sheet is expanded is 5.0 ⁇ . It is preferably 10 10 ⁇ / ⁇ or less, and for example, any one of 6.0 ⁇ 10 9 ⁇ / ⁇ or less, 5.0 ⁇ 10 8 ⁇ / ⁇ or less, and 3.0 ⁇ 10 8 ⁇ / ⁇ or less. May be Before curing, the surface resistivity before expanding is less than or equal to the upper limit, after expanding the protective film forming composite sheet, before or after curing the protective film forming film, the semiconductor chip It is possible to further suppress damage due to electrification of a circuit in the semiconductor chip when the pickup is performed by separating from the support sheet.
  • the surface resistivity before the protective film forming film in the protective film forming composite sheet is cured and after the protective film forming composite sheet is expanded is 5.0 ⁇ . It is preferably 10 10 ⁇ / ⁇ or less, and for example, any one of 6.0 ⁇ 10 9 ⁇ / ⁇ or less, 5.0 ⁇ 10 8 ⁇ / ⁇ or less, and 3.0 ⁇ 10 8 ⁇ / ⁇ or less. May be Before curing, the surface resistivity after expanding is less than or equal to the upper limit value, after expanding the protective film forming composite sheet, before or after curing the protective film forming film, the semiconductor chip It is possible to further suppress damage due to electrification of a circuit in the semiconductor chip when the pickup is performed by separating from the support sheet.
  • the lower limit of the surface resistivity of the protective sheet-forming composite sheet before the protective film-forming film is cured is preferably as small as possible, and is not particularly limited.
  • the composite sheet for forming a protective film having the surface resistivity before curing of 1.0 ⁇ 10 5 ⁇ / ⁇ or more can be more easily manufactured.
  • the surface resistivity of the protective film-forming composite sheet is set by arbitrarily combining the preferred lower limit value and the upper limit value described above. It can be adjusted appropriately within the range.
  • the surface resistivity before curing and before or after expanding is preferably 1.0 ⁇ 10 5 to 5.0 ⁇ 10 10 ⁇ / ⁇ , and for example, , 1.0 ⁇ 10 5 to 6.0 ⁇ 10 9 ⁇ / ⁇ , 1.0 ⁇ 10 5 to 5.0 ⁇ 10 8 ⁇ / ⁇ , and 1.0 ⁇ 10 5 to 3.0 ⁇ 10 8 ⁇ It may be either /. However, these are examples of the surface resistivity before curing and before or after expanding.
  • the protective film-forming composite sheet of the present embodiment has the above-mentioned structure after expanding the protective film-forming composite sheet.
  • the condition of the surface resistivity after the curable protective film forming film is cured, before expanding the protective film forming composite sheet, before expanding the protective film forming composite sheet It is preferable that both the condition of the surface resistivity before the curable protective film forming film is cured are satisfied.
  • the support sheet may be composed of one layer (single layer) or may be composed of two or more layers.
  • the constituent materials and thicknesses of the plurality of layers may be the same or different from each other, and the combination of the plurality of layers is not particularly limited as long as the effects of the present invention are not impaired.
  • the support sheet may be transparent or opaque, and may be colored depending on the purpose.
  • the support sheet preferably transmits energy rays.
  • the supporting sheet is preferably transparent.
  • the “energy ray” means an electromagnetic wave or a charged particle beam having an energy quantum.
  • energy rays include ultraviolet rays, radiation, and electron rays.
  • Ultraviolet rays can be irradiated by using, for example, a high-pressure mercury lamp, a fusion lamp, a xenon lamp, a black light or an LED lamp as an ultraviolet ray source.
  • the electron beam can be emitted by an electron beam accelerator or the like.
  • “energy ray-curable” means a property of being cured by irradiation with energy rays
  • non-energy ray-curable is a property of not being cured by irradiation of energy rays.
  • the support sheet includes, for example, one including a base material and an adhesive layer formed on the base material; one including only the base material; and the like.
  • the preferable supporting sheet includes, for example, a base material, and in the protective film-forming composite sheet, the supporting sheet is located on the opposite side of the base material from the protective film forming film side.
  • a support sheet provided with an antistatic layer formed on the surface may be abbreviated as “backside antistatic layer” in the present specification); a base material having an antistatic property as the antistatic layer (the present specification In the specification, it may be abbreviated as “antistatic base material”); a support sheet comprising a base material, and in a composite film for forming a protective film, the above-mentioned protective film formation of the base material.
  • a support sheet provided with an antistatic layer may be abbreviated as “surface antistatic layer” in the present specification) formed on the surface located on the film side is used.
  • the antistatic layers back surface antistatic layer, antistatic substrate and surface antistatic layer
  • the supporting sheet includes a base material, and an antistatic layer formed on one surface or both surfaces of the base material, a composite sheet for forming a protective film;
  • An example of the protective sheet is a composite sheet for forming a protective film, in which the support sheet has a base material having antistatic properties (that is, an antistatic base material) as the antistatic layer.
  • the “antistatic layer formed on one surface of the substrate” means the “backside antistatic layer or surface antistatic layer”.
  • the "antistatic layer formed on both sides of the substrate” means "a combination of the backside antistatic layer and the surface antistatic layer”.
  • the support sheet is a composite film for protective film formation comprising the substrate and the back surface antistatic layer, or the support sheet is a composite film for protective film formation comprising the antistatic substrate, preferable.
  • the composite sheet for forming a protective film also includes a sheet having a layer that does not correspond to any of the back surface antistatic layer, the antistatic substrate, and the surface antistatic layer as an antistatic layer.
  • the antistatic layer may be provided on the surface of the protective film forming film opposite to the support sheet side, or the protective film forming film may have antistatic properties.
  • the antistatic layer that is, the antistatic layer opposite to the supporting sheet side of the protective film forming film
  • the antistatic layer is incorporated into the semiconductor device after the antistatic layer provided on the side surface or the protective film forming film having the antistatic property) is attached to the semiconductor chip.
  • the protective film-forming film or the semiconductor chip to which the protective film is attached is separated from the antistatic layer on the support sheet and picked up. At this time, the process abnormality may occur due to the interposition of the antistatic layer.
  • the protective film-forming composite sheet includes, as an antistatic layer, the back surface antistatic layer, the antistatic substrate, or the surface antistatic layer.
  • FIG. 1 is a sectional view schematically showing a protective film-forming composite sheet according to an embodiment of the present invention.
  • the protective film-forming composite sheet 101 shown here is a protective film formed on the support sheet 10 and one surface (sometimes referred to as “first surface” in the present specification) 10 a of the support sheet 10.
  • the forming film 13 is provided.
  • the support sheet 10 includes a base material 11, an adhesive layer 12 formed on one surface (sometimes referred to as “first surface” in this specification) 11 a of the base material 11, and the base material 11. And the back surface antistatic layer 17 formed on the other surface (which may be referred to as a "second surface” in the present specification) 11b. That is, the support sheet 10 is configured by laminating the back surface antistatic layer 17, the base material 11, and the adhesive layer 12 in this order in the thickness direction thereof.
  • the first surface 10a of the support sheet 10 is a surface (which may be referred to as "first surface” in the present specification) of the pressure-sensitive adhesive layer 12 opposite to the base material 11 side.
  • the protective film forming composite sheet 101 is configured by laminating the back surface antistatic layer 17, the base material 11, the adhesive layer 12, and the protective film forming film 13 in this order in the thickness direction thereof. ..
  • the protective film forming composite sheet 101 further includes a release film 15 on the protective film forming film 13.
  • the protective film forming film 13 is laminated on the entire surface or almost the entire first surface 12a of the adhesive layer 12, and the adhesive layer 12 side of the protective film forming film 13 is
  • the adhesive layer 16 for a jig is laminated on a part of the opposite surface (which may be referred to as a “first surface” in the present specification) 13a, that is, a region in the vicinity of the peripheral edge to form a protective film.
  • first surface 13a of the film 13 for jigs the surface on which the jig adhesive layer 16 is not laminated, and the surface of the jig adhesive layer 16 opposite to the pressure-sensitive adhesive layer 12 side (in the present specification, Is sometimes referred to as the “first surface”) 16a, and the release film 15 is laminated thereon.
  • a gap may be partially formed between the release film 15 and the layer in direct contact with the release film 15.
  • the state where the release film 15 is in contact (lamination) with the side surface 16c of the jig adhesive layer 16 is shown, but the release film 15 is not in contact with the side surface 16c.
  • a state is shown in which the release film 15 is in contact (laminated) with a region near the jig adhesive layer 16 on the first surface 13a of the protective film forming film 13, The release film 15 may not be in contact with the area.
  • the boundary between the first surface 16a and the side surface 16c of the jig adhesive layer 16 cannot be clearly distinguished.
  • the protective film-forming composite sheet of the other embodiment which is provided with the jig adhesive layer.
  • one or both surfaces of the base material are usually uneven surfaces having an uneven shape. This is because if the substrate does not have such a concavo-convex surface, when the substrate is wound into a roll, the contact surfaces of the substrates stick to each other and block, making it difficult to use. .. If at least one of the contact surfaces of the base materials is a concave-convex surface, the area of the contact surface is small, and thus blocking is suppressed. Therefore, in the composite sheet 101 for forming a protective film, one or both of the first surface 11a and the second surface 11b of the base material 11 may be an uneven surface.
  • first surface 11a and the second surface 11b of the base material 11 When only one of the first surface 11a and the second surface 11b of the base material 11 is an uneven surface, either one may be the uneven surface. In this case, the other becomes a smooth surface with a low degree of unevenness.
  • the conditions for such an uneven surface and a smooth surface are the same for other composite films for forming a protective film including the base material 11.
  • the jig adhesive layer 16 is used for fixing the protective film forming composite sheet 101 to a jig such as a ring frame.
  • the jig adhesive layer 16 may have, for example, a single-layer structure containing an adhesive component, or a plurality of layers in which a layer containing an adhesive component is laminated on both surfaces of a core sheet. It may have a structure.
  • the back antistatic layer 17 contains an antistatic agent. Thereby, the surface resistivity of the back surface antistatic layer 17 which is the outermost layer on the support sheet 10 side in the protective film forming composite sheet 101 can be set to 1.0 ⁇ 10 11 ⁇ / ⁇ or less. Then, after the protective film-forming composite sheet 101 is expanded, when the semiconductor chip is separated from the support sheet and picked up, it is possible to further suppress the destruction of the circuit in the semiconductor chip due to the charging.
  • the structure of the back surface antistatic layer 17 is adjusted.
  • the surface resistivity of the protective film-forming composite sheet 101 after being expanded under the above conditions can be set to 1.0 ⁇ 10 11 ⁇ / ⁇ or less.
  • the protective film-forming composite sheet 101 is expanded, when the semiconductor chip is separated from the support sheet and picked up, it is possible to further suppress the destruction of the circuit in the semiconductor chip due to the charging.
  • the constitution of the back surface antistatic layer 17 to be adjusted for example, the surface of the back surface antistatic layer 17 on the side opposite to the protective film forming film 13 side (hereinafter, referred to as “second surface”).
  • Reference numeral 17a indicates a surface of the back surface antistatic layer 17 on the side of the protective film forming film 13 (which may be referred to as "first surface" in the present specification).
  • the back surface of the semiconductor wafer (not shown) is attached to the first surface 13a of the protective film forming film 13 in a state where the release film 15 is removed.
  • the first surface 16a of the layer 16 is used by being attached to a jig such as a ring frame.
  • FIG. 2 is a sectional view schematically showing a protective film-forming composite sheet according to another embodiment of the present invention. 2 and subsequent figures, the same components as those shown in the already-described figures are designated by the same reference numerals as those in the already-illustrated figures, and detailed description thereof will be omitted.
  • the shape and size of the protective film forming film are different, and the jig adhesive layer is not the first surface of the protective film forming film but the first adhesive layer. It is the same as the composite sheet 101 for forming a protective film shown in FIG. 1 except that it is laminated on the surface.
  • the protective film forming film 23 has a partial area of the first surface 12a of the adhesive layer 12, that is, the width direction of the adhesive layer 12 (see FIG. 2). In the left-right direction) in the central region.
  • the jig adhesive layer 16 is laminated on the surface of the first surface 12a of the pressure-sensitive adhesive layer 12 on which the protective film forming film 23 is not laminated, that is, on the region near the peripheral portion.
  • the surface of the protective film forming film 23 opposite to the pressure-sensitive adhesive layer 12 side may be referred to as “first surface” in the present specification) 23 a and the jig adhesive layer 16 first surface.
  • the release film 15 is laminated on the one surface 16a.
  • the first surface 23a of the protective film-forming film 23 is the first surface 12a of the adhesive layer 12 (that is, the protective film-forming film 23 is laminated).
  • the surface area is smaller than that of the combined area and the non-laminated area), and has, for example, a planar shape such as a circular shape.
  • a gap may be partially formed between the release film 15 and the layer that is in direct contact with the release film 15.
  • the state where the release film 15 is in contact (lamination) with the side surface 23c of the protective film forming film 23 is shown, but the release film 15 may not be in contact with the side surface 23c. is there.
  • a state in which the release film 15 is in contact (laminated) with a region of the surface 12a of the adhesive layer 12 where the protective film forming film 23 and the jig adhesive layer 16 are not laminated Although shown, the release film 15 may not be in contact with the region. In some cases, the boundary between the first surface 23a and the side surface 23c of the protective film forming film 23 cannot be clearly distinguished.
  • the protective film-forming composite sheet of the other embodiment which includes the protective film-forming film having the same shape and size.
  • the surface resistivity of the back surface antistatic layer 17, which is the outermost layer on the side of the support sheet 10 in the protective film-forming composite sheet 102, after expanding under the above conditions is 1.0 ⁇ 10 11 ⁇ / ⁇ or less. Further, after the composite sheet 102 for forming a protective film is expanded, when the semiconductor chip is separated from the support sheet and picked up, the damage in the circuit in the semiconductor chip due to the charging can be further suppressed.
  • the back surface of the semiconductor wafer (not shown) is attached to the first surface 23a of the protective film forming film 23 in a state where the release film 15 is removed, and further, the jig adhesive.
  • the first surface 16a of the layer 16 is used by being attached to a jig such as a ring frame.
  • FIG. 3 is a cross-sectional view schematically showing a protective film-forming composite sheet according to still another embodiment of the present invention.
  • the protective film forming composite sheet 103 shown here is the same as the protective film forming composite sheet 102 shown in FIG. 2 except that the jig adhesive layer 16 is not provided.
  • the surface resistivity of the back surface antistatic layer 17, which is the outermost layer on the support sheet 10 side, in the composite film 103 for forming a protective film after expansion under the above conditions is 1.0 ⁇ 10 11 ⁇ / ⁇ or less.
  • the back surface of the semiconductor wafer (not shown) is attached to the first surface 23a of the protective film forming film 23 in a state where the release film 15 is removed.
  • An area of the first surface 12a where the protective film forming film 23 is not laminated is attached to a jig such as a ring frame and used.
  • FIG. 4 is a sectional view schematically showing a protective film-forming composite sheet according to still another embodiment of the present invention.
  • the protective film forming composite sheet 104 shown here is for forming a protective film shown in FIG. 3 except that an intermediate layer 18 is further provided between the pressure-sensitive adhesive layer 12 and the protective film forming film 23. It is the same as the composite sheet 103.
  • the protective film forming composite sheet 104 includes the intermediate layer 18 on the first surface 12 a of the pressure-sensitive adhesive layer 12.
  • a surface of the intermediate layer 18 opposite to the pressure-sensitive adhesive layer 12 side (may be referred to as “first surface” in this specification) 18 a is a laminated surface of the protective film forming film 23.
  • the protective film forming composite sheet 104 the back surface antistatic layer 17, the base material 11, the adhesive layer 12, the intermediate layer 18, and the protective film forming film 23 are laminated in this order in the thickness direction thereof, It is configured. Further, the protective film forming composite sheet 104 further includes a release film 15 on the protective film forming film 23.
  • the intermediate layer 18 is arranged between the protective film forming film 23 and the pressure-sensitive adhesive layer 12, and is arranged at an intermediate position which does not become the outermost layer.
  • the intermediate layer 18 is not particularly limited as long as it exhibits its function at such an arrangement position. More specifically, examples of the intermediate layer 18 include a peelability improving layer having one surface subjected to a peeling treatment.
  • the releasability improving layer improves the releasability of the semiconductor chip from the supporting sheet when the semiconductor chip having the protective film forming film or the protective film is picked up by separating (peeling) from the supporting sheet. It has the function of
  • the first surface 18a of the intermediate layer 18 is in contact with the surface of the protective film forming film 23 on the pressure-sensitive adhesive layer 12 side (which may be referred to as "second surface” in this specification) 23b.
  • the shape (that is, the planar shape) and size of the intermediate layer 18 are not particularly limited as long as the intermediate layer 18 can exhibit its function.
  • it is preferable that the first surface 18a of the intermediate layer 18 is in contact with the entire second surface 23b of the protective film forming film 23.
  • the first surface 18a of the intermediate layer 18 preferably has an area equal to or larger than that of the second surface 23b of the protective film forming film 23.
  • the surface of the intermediate layer 18 on the pressure-sensitive adhesive layer 12 side (may be referred to as “second surface” in this specification) 18 b is in contact with the entire first surface 12 a of the pressure-sensitive adhesive layer 12. Alternatively, it may be in contact with only a part of the first surface 12a of the pressure-sensitive adhesive layer 12. However, in order to fully exert the function of the intermediate layer 18, it is preferable that the first surface 12a of the adhesive layer 12 is in contact with the entire second surface 18b of the intermediate layer 18.
  • the preferable intermediate layer 18 include those in which the area and shape of the first surface 18a thereof are the same as the area and shape of the second surface 23b of the protective film forming film 23.
  • a gap may be partially formed between the release film 15 and the layer in direct contact with the release film 15.
  • the release film 15 may not be in contact with the side surface 18c.
  • the release film 15 in the first surface 12a of the pressure-sensitive adhesive layer 12, the release film 15 is in contact (laminated) with the region where the intermediate layer 18 is not laminated, including the region in the vicinity of the intermediate layer 18.
  • the release film 15 may not be in contact with the region of the first surface 12a in the vicinity of the intermediate layer 18. In some cases, the boundary between the first surface 18a and the side surface 18c of the intermediate layer 18 cannot be clearly distinguished.
  • the back surface antistatic layer 17, which is the outermost layer on the support sheet 10 side, in the protective film-forming composite sheet 104 has a surface resistivity of 1.0 ⁇ 10 11 ⁇ / ⁇ or less after expanded under the above conditions. After the composite sheet 104 for forming a protective film is expanded, when the semiconductor chip is separated from the support sheet and picked up, it is possible to further suppress the destruction of the circuit in the semiconductor chip due to the charging.
  • the back surface of the semiconductor wafer (not shown) is attached to the first surface 23a of the protective film forming film 23 in a state where the release film 15 is removed, and the adhesive layer 12 is further formed.
  • a region of the first surface 12a where the intermediate layer 18 is not stacked is used by being attached to a jig such as a ring frame.
  • FIG. 5 is sectional drawing which shows typically the composite sheet for protective film formation which concerns on other embodiment of this invention.
  • the protective film-forming composite sheet 105 shown here is the same as the protective film-forming composite sheet 101 shown in FIG. 1 except that the pressure-sensitive adhesive layer 12 is not provided.
  • the protective film-forming composite sheet 105 is the same as the protective film-forming composite sheet 101 except that the support sheet 10 is replaced by the support sheet 20 that does not include the pressure-sensitive adhesive layer 12.
  • the first surface 11a of the base material 11 is the surface of the support sheet 20 on the protective film forming film 13 side (may be referred to as “first surface” in the present specification) 20a.
  • the surface resistivity of the back surface antistatic layer 17, which is the outermost layer on the side of the support sheet 20 in the protective film-forming composite sheet 105, is 1.0 ⁇ 10 11 ⁇ / ⁇ or less after expanded under the above conditions. Further, after the composite sheet 105 for forming a protective film is expanded, when the semiconductor chip is separated from the support sheet and picked up, the circuit in the semiconductor chip can be more effectively prevented from being broken by charging.
  • the back surface of the semiconductor wafer (not shown) is attached to the first surface 13a of the protective film forming film 13 in a state where the release film 15 is removed.
  • the first surface 16a of the layer 16 is used by being attached to a jig such as a ring frame.
  • the composite sheet for forming a protective film having the backside antistatic layer as an antistatic layer is not limited to those shown in FIGS. 1 to 5.
  • the composite sheet for forming a protective film of the present embodiment is obtained by modifying or deleting a part of the configuration of the composite sheet for forming a protective film shown in FIGS.
  • the protective sheet-forming composite sheet shown in FIGS. 1 to 5 may be added with another structure.
  • the composite sheet for forming a protective film shown in FIG. 5 does not have an adhesive layer.
  • the composite sheet for forming a protective film of the present embodiment having no adhesive layer, for example, the composite sheet for forming a protective film shown in FIGS. 2 to 4 in which the adhesive layer is omitted Is mentioned.
  • the composite sheet for forming a protective film shown in FIGS. 1, 2 and 5 includes a jig adhesive layer.
  • the protective film-forming composite sheet of the present embodiment including the jig adhesive layer other than these, for example, in the protective film-forming composite sheet shown in FIG.
  • the thing which the adhesive layer for tools was newly provided is mentioned.
  • the arrangement position of the jig adhesive layer on the first surface may be the same as in the case of the protective film forming composite sheet shown in FIGS.
  • the composite sheet for forming a protective film shown in FIGS. 3 to 4 does not include a jig adhesive layer.
  • the protective film-forming composite sheet of the present embodiment that does not include the jig adhesive layer for example, in the protective film-forming composite sheet shown in FIG. 1 and FIG. The layer is omitted.
  • the composite sheet for forming a protective film shown in FIG. 4 includes an intermediate layer.
  • the protective film-forming composite sheet of the present embodiment including an intermediate layer other than this, for example, in the protective film-forming composite sheet shown in FIGS. 1, 2 and 5, the protective film-forming composite sheet An example in which an intermediate layer is newly provided on the second surface side is mentioned.
  • the arrangement form of the intermediate layer on the second surface may be the same as that described with reference to FIG.
  • the composite sheet for forming a protective film shown in FIGS. 1 to 5 has nothing except a back surface antistatic layer, a substrate, a protective film forming film and a release film, or has only an adhesive layer. Or, it has only the adhesive layer and the intermediate layer.
  • the protective film-forming composite sheet of the present embodiment may be, for example, the protective film-forming composite sheet shown in FIGS. 1 to 5, in which a back surface antistatic layer, a base material, an adhesive layer, an intermediate layer, Examples thereof include those provided with other layers that do not correspond to either the protective film forming film or the release film.
  • the size and shape of each layer can be arbitrarily adjusted according to the purpose.
  • FIG. 6 is a sectional view schematically showing a protective film-forming composite sheet according to an embodiment of the present invention.
  • the protective film-forming composite sheet 201 shown here is a protective film formed on the support sheet 30 and one surface (sometimes referred to as “first surface” in this specification) 30 a of the support sheet 30.
  • the forming film 13 is provided.
  • the support sheet 30 is formed on the antistatic substrate 11 ′ and one surface (may be referred to as “first surface” in the present specification) 11 a ′ of the antistatic substrate 11 ′. And a pressure-sensitive adhesive layer 12. That is, the support sheet 30 is configured by laminating the antistatic substrate 11' and the pressure-sensitive adhesive layer 12 in the thickness direction thereof. In other words, the first surface 30a of the support sheet 30 is the first surface 12a of the pressure-sensitive adhesive layer 12.
  • reference numeral 11b' indicates the other surface of the antistatic substrate 11' (may be referred to as "second surface” in this specification).
  • the protective film forming composite sheet 201 is configured by laminating the antistatic substrate 11 ′, the adhesive layer 12, and the protective film forming film 13 in this order in the thickness direction thereof.
  • the protective film forming composite sheet 201 further includes a release film 15 on the protective film forming film 13.
  • the protective film forming film 13 is laminated on the entire surface or substantially the entire first surface 12a of the pressure-sensitive adhesive layer 12, and a part of the first surface 13a of the protective film forming film 13 is laminated. That is, the jig adhesive layer 16 is laminated in a region near the peripheral portion, and a surface of the first surface 13a of the protective film forming film 13 on which the jig adhesive layer 16 is not laminated, The release film 15 is laminated on the first surface 16 a of the jig adhesive layer 16.
  • the protective film-forming composite sheet 201 shown in FIG. 1 is provided with an antistatic substrate 11 ′ instead of the back surface antistatic layer 17 and the substrate 11. Same as 101.
  • the antistatic substrate 11' contains an antistatic agent.
  • the surface resistivity of the antistatic substrate 11′, which is the outermost layer on the support sheet 30 side, in the protective film-forming composite sheet 201 after expanding under the above conditions is 1.0 ⁇ 10 11 ⁇ . / It can be less than or equal to.
  • the protective film-forming composite sheet 201 is expanded, when the semiconductor chip is separated from the supporting sheet and picked up, the circuit in the semiconductor chip can be further prevented from being damaged by charging.
  • the constitution of the antistatic substrate 11' to be adjusted for example, as described above, the surface state of the second surface 11b' of the antistatic substrate 11' and the antistatic substrate 11' Hardness etc. are mentioned.
  • antistatic substrate 11' examples include the same as the above-mentioned substrate 11 except that an antistatic agent is further included.
  • the back surface of the semiconductor wafer (not shown) is attached to the first surface 13a of the protective film forming film 13 in a state where the release film 15 is removed.
  • the first surface 16a of the layer 16 is used by being attached to a jig such as a ring frame.
  • FIG. 7 is sectional drawing which shows typically the composite sheet for protective film formation which concerns on other embodiment of this invention.
  • the protective film-forming composite sheet 202 shown here the shape and size of the protective film forming film are different, and the jig adhesive layer is not the first surface of the protective film forming film but the first adhesive layer. It is the same as the composite sheet 201 for forming a protective film shown in FIG. 6 except that it is laminated on the surface.
  • the protective film-forming composite sheet 202 is provided with an antistatic base material 11′ instead of the back surface antistatic layer 17 and the base material 11 laminate, except that the protective film formation composite sheet 202 shown in FIG. It is the same as the composite sheet 102.
  • the protective film forming composite sheet 202 is configured by laminating the antistatic substrate 11 ′, the adhesive layer 12, and the protective film forming film 23 in this order in the thickness direction thereof. Further, the protective film forming composite sheet 202 further includes the release film 15 on the protective film forming film 23.
  • the surface resistivity of the antistatic substrate 11′ which is the outermost layer on the side of the support sheet 30 in the protective film forming composite sheet 202, after expanding under the above conditions is 1.0 ⁇ 10 11 ⁇ / ⁇ or less. Therefore, after expanding the protective film-forming composite sheet 202, when the semiconductor chip is separated from the support sheet and picked up, damage due to charging of a circuit in the semiconductor chip can be further suppressed.
  • the back surface of the semiconductor wafer (not shown) is attached to the first surface 23a of the protective film forming film 23 in a state where the release film 15 is removed.
  • the first surface 16a of the layer 16 is used by being attached to a jig such as a ring frame.
  • FIG. 8 is sectional drawing which shows typically the composite sheet for protective film formation which concerns on other embodiment of this invention.
  • the protective film forming composite sheet 203 shown here is the same as the protective film forming composite sheet 202 shown in FIG. 7 except that the jig adhesive layer 16 is not provided.
  • the protective film-forming composite sheet 203 is provided with an antistatic substrate 11' instead of the laminate of the back surface antistatic layer 17 and the substrate 11, and the protective film is formed as shown in FIG. It is the same as the composite sheet 103.
  • the surface resistivity of the antistatic substrate 11′, which is the outermost layer on the support sheet 30 side in the protective film forming composite sheet 203, after expanding under the above conditions is 1.0 ⁇ 10 11 ⁇ / ⁇ or less. Therefore, after the composite sheet 203 for forming a protective film is expanded, when the semiconductor chip is separated from the support sheet and picked up, the damage in the circuit in the semiconductor chip due to the charging can be further suppressed.
  • the back surface of the semiconductor wafer (not shown) is attached to the first surface 23a of the protective film forming film 23 in a state where the release film 15 is removed.
  • An area of the first surface 12a where the protective film forming film 23 is not laminated is attached to a jig such as a ring frame and used.
  • FIG. 9 is a cross-sectional view schematically showing a protective film-forming composite sheet according to still another embodiment of the present invention.
  • the protective film forming composite sheet 204 shown here is for forming a protective film shown in FIG. 8 except that an intermediate layer 18 is further provided between the pressure-sensitive adhesive layer 12 and the protective film forming film 23. It is the same as the composite sheet 203.
  • the protective film forming composite sheet 204 is configured by laminating the antistatic substrate 11′, the pressure-sensitive adhesive layer 12, the intermediate layer 18, and the protective film forming film 23 in this order in the thickness direction thereof. ing.
  • the protective film forming composite sheet 204 further includes a release film 15 on the protective film forming film 23.
  • the protective film-forming composite sheet 204 has an antistatic substrate 11' instead of the laminate of the back surface antistatic layer 17 and the substrate 11, and the protective film shown in FIG. It is the same as the forming composite sheet 104.
  • the surface resistivity of the antistatic substrate 11 ′, which is the outermost layer on the support sheet 30 side, in the protective film-forming composite sheet 204 after expanding under the above conditions is 1.0 ⁇ 10 11 ⁇ / ⁇ or less.
  • the back surface of the semiconductor wafer (not shown) is attached to the first surface 23a of the protective film forming film 23 in a state where the release film 15 is removed.
  • a region of the first surface 12a where the intermediate layer 18 is not stacked is used by being attached to a jig such as a ring frame.
  • FIG. 10 is a cross-sectional view schematically showing a protective film-forming composite sheet according to still another embodiment of the present invention.
  • the protective film-forming composite sheet 205 shown here is the same as the protective film-forming composite sheet 201 shown in FIG. 6 except that the adhesive layer 12 is not provided.
  • the protective film forming composite sheet 205 is the same as the protective film forming composite sheet 201 except that the support sheet 30 is replaced by the support sheet 40 that does not include the pressure-sensitive adhesive layer 12.
  • the protective film forming composite sheet 205 is configured by laminating the antistatic substrate 11' and the protective film forming film 13 in this order.
  • the protective film forming composite sheet 205 further includes a release film 15 on the protective film forming film 13.
  • the protective film-forming composite sheet 205 is replaced with the laminate of the back surface antistatic layer 17 and the base material 11, and is provided with the antistatic base material 11′, and the protective film shown in FIG. It is the same as the forming composite sheet 105.
  • the surface resistivity of the antistatic substrate 11′, which is the outermost layer on the support sheet 40 side in the protective film-forming composite sheet 205, after expanding under the above conditions is 1.0 ⁇ 10 11 ⁇ / ⁇ or less. Therefore, after the composite sheet 205 for forming a protective film is expanded, when the semiconductor chip is separated from the support sheet and picked up, the damage in the circuit in the semiconductor chip due to the charging can be further suppressed.
  • the back surface of the semiconductor wafer (not shown) is attached to the first surface 13a of the protective film forming film 13 in a state where the release film 15 is removed.
  • the first surface 16a of the layer 16 is used by being attached to a jig such as a ring frame.
  • the composite film for forming a protective film of the present embodiment which is provided with the antistatic substrate as the antistatic layer, is not limited to those shown in FIGS. 6 to 10.
  • a part of the configuration of the composite sheet for forming a protective film shown in FIGS. 6 to 10 is changed or deleted within a range not impairing the effects of the present invention.
  • another structure may be added to the composite film for forming a protective film shown in FIGS. 6 to 10.
  • the composite sheet for forming a protective film shown in FIG. 10 does not have an adhesive layer.
  • the protective film-forming composite sheet of the present embodiment having no adhesive layer other than this, for example, in the protective film-forming composite sheet shown in FIGS. 7 to 9, the adhesive layer is omitted. Is mentioned.
  • the composite sheet for forming a protective film shown in FIGS. 6, 7 and 10 is provided with an adhesive layer for jigs.
  • the protective film-forming composite sheet of the present embodiment including the jig adhesive layer other than these, for example, in the protective film-forming composite sheet shown in FIG. 9, the first surface of the adhesive layer is cured. The thing which the adhesive layer for tools was newly provided is mentioned. In this case, the arrangement position of the jig adhesive layer on the first surface may be the same as in the case of the protective film forming composite sheet shown in FIGS. 6, 7 and 10.
  • the composite sheet for forming a protective film shown in FIGS. 8 to 9 does not include a jig adhesive layer.
  • the protective film-forming composite sheet of the present embodiment which does not include the jig adhesive layer, in addition to these, for example, in the protective film forming composite sheet shown in FIGS. The layer is omitted.
  • the composite sheet for forming a protective film shown in FIG. 9 also has an intermediate layer.
  • the protective film-forming composite sheet of the present embodiment including the intermediate layer other than this, for example, in the protective film-forming composite sheet shown in FIGS. 6, 7, and 10, the protective film-forming composite sheet An example is one in which an intermediate layer is newly provided on two surfaces. In this case, the arrangement form of the intermediate layer on the second surface may be the same as that described with reference to FIG. 9.
  • the composite sheet for forming a protective film shown in FIGS. 6 to 10 does not include anything other than the antistatic substrate, the protective film forming film, and the release film, or does it include only an adhesive layer, Alternatively, it is provided with only the adhesive layer and the intermediate layer.
  • the protective film-forming composite sheet of the present embodiment may be, for example, the protective film-forming composite sheet shown in FIGS. 6 to 10, in which an antistatic substrate, an adhesive layer, an intermediate layer, and a protective film. Examples thereof include those having other layers that do not correspond to any of the forming film and the release film.
  • a gap may be partially formed between the release film and the layer that is in direct contact with the release film.
  • the size and shape of each layer can be arbitrarily adjusted according to the purpose.
  • FIG. 11 is sectional drawing which shows typically the composite sheet for protective film formation which concerns on one Embodiment of this invention.
  • the protective film-forming composite sheet 301 shown here is a protective film formed on the support sheet 50 and one surface (sometimes referred to as “first surface” in this specification) 50a of the support sheet 50.
  • the forming film 13 is provided.
  • the support sheet 50 includes the base material 11, the surface antistatic layer 19 formed on the first surface 11 a of the base material 11, and the surface of the surface antistatic layer 19 opposite to the base material 11 side (in the present specification.
  • the pressure-sensitive adhesive layer 12 is formed on the surface 19a). That is, the support sheet 50 is configured by laminating the base material 11, the surface antistatic layer 19, and the pressure-sensitive adhesive layer 12 in this order in the thickness direction thereof.
  • the first surface 50a of the support sheet 50 is the first surface 12a of the pressure-sensitive adhesive layer 12.
  • Reference numeral 19b indicates the surface of the surface antistatic layer 19 on the side of the base material 11 (which may be referred to as "second surface” in the present specification).
  • the protective film forming composite sheet 301 is configured by laminating the base material 11, the surface antistatic layer 19, the pressure-sensitive adhesive layer 12, and the protective film forming film 13 in this order in the thickness direction thereof. .. Further, the protective film forming composite sheet 301 further includes a release film 15 on the protective film forming film 13.
  • the protective film forming film 13 is laminated on the entire surface or substantially the entire first surface 12a of the pressure-sensitive adhesive layer 12, and a part of the first surface 13a of the protective film forming film 13 is laminated. That is, the jig adhesive layer 16 is laminated in a region near the peripheral portion, and a surface of the first surface 13a of the protective film forming film 13 on which the jig adhesive layer 16 is not laminated, The release film 15 is laminated on the first surface 16 a of the jig adhesive layer 16.
  • the protective film-forming composite sheet 301 does not include the back surface antistatic layer 17 on the second surface 11b of the base material 11, and adheres to the first surface 11a of the base material 11, more specifically, the base material 11 and the adhesive. It is the same as the composite sheet 101 for forming a protective film shown in FIG. 1 except that a surface antistatic layer 19 is provided between the agent layer 12 and the agent layer 12.
  • the surface antistatic layer 19 is the same as the back antistatic layer 17 described above. That is, in the protective film-forming composite sheet 301, in the protective film forming composite sheet 101, the arrangement position of the antistatic layer is from the second surface 11b of the base material 11 between the base material 11 and the adhesive layer 12. It can be said that it has been changed to.
  • the surface antistatic layer 19 contains an antistatic agent.
  • the surface resistivity of the substrate 11, which is the outermost layer on the support sheet 50 side, in the protective film-forming composite sheet 301 becomes 1.0 ⁇ 10 11 ⁇ / ⁇ or less.
  • the normal charging of the protective film forming composite sheet 301 is suppressed.
  • the structure of the base material 11 is adjusted.
  • the static friction force of the test piece prepared from the protective film-forming composite sheet 301 after heating at 70° C. for 1 minute becomes 20 N or less.
  • the separation-time charging of the laminated body obtained by using the protective film forming composite sheet 301 is suppressed.
  • destruction of the circuit in the semiconductor chip when separating the stacked body is suppressed.
  • the configuration of the base material 11 to be adjusted for example, as described above, the surface state of the second surface 11b of the base material 11, the hardness of the base material 11, and the like can be mentioned.
  • the back surface of the semiconductor wafer (not shown) is attached to the first surface 13a of the protective film forming film 13 in a state where the release film 15 is removed.
  • the first surface 16a of the layer 16 is used by being attached to a jig such as a ring frame.
  • the composite sheet for forming a protective film having the surface antistatic layer as the antistatic layer is not limited to that shown in FIG.
  • the protective film-forming composite sheet of the present embodiment is the same as the protective film-forming composite sheet shown in FIGS. 2 to 5, except that the back surface antistatic layer is not provided and the first surface of the base material has a surface antistatic property.
  • Examples thereof include those configured to include a layer (in other words, the arrangement position of the antistatic layer is changed from the second surface of the base material to the first surface of the base material).
  • the protective film-forming composite sheet having the surface antistatic layer as the antistatic layer is not limited to the above, and in the above-described protective film-forming composite sheet having the back surface antistatic layer.
  • the arrangement position of the antistatic layer is changed from the second surface of the base material to the first surface of the base material.
  • the size and shape of each layer can be arbitrarily adjusted according to the purpose.
  • the protective film-forming composite sheet provided with only one kind selected from the group consisting of a backside antistatic layer, an antistatic substrate and a surface antistatic layer as the antistatic layer has been described.
  • the protective film-forming composite sheet according to one embodiment of the present invention has, as the antistatic layer, two or more types (that is, two types) selected from the group consisting of a backside antistatic layer, an antistatic substrate, and a surface antistatic layer. Or 3 types) may be provided.
  • the effect of suppressing peeling charge of such a composite sheet for forming a protective film is particularly high, and as a result, the effect of suppressing foreign matter from entering between the film for forming a protective film and the semiconductor wafer is particularly high.
  • FIGS. 1 to 5 examples of the protective film-forming composite sheet having both the backside antistatic layer and the antistatic substrate as the antistatic layer are shown in FIGS. 1 to 5.
  • the base material 11 is replaced with an antistatic substrate (for example, an antistatic substrate 11' in the composite sheet for forming a protective film shown in FIGS. 6 to 10).
  • these protective film-forming composite sheets are the same as the protective film-forming composite sheets shown in FIGS. 6 to 10, on the second surface 11b′ of the antistatic substrate 11′, a backside antistatic layer (eg, The back surface antistatic layer 17) in the composite sheet for forming a protective film shown in FIGS. 1 to 5 is provided.
  • a composite film 401 for forming a protective film shown in FIG. 12 is the composite sheet 101 for forming a protective film shown in FIG. 1 in which the base material 11 is replaced with an antistatic base material 11′.
  • the protective film forming composite sheet 401 is the same as the protective film forming composite sheet 101 except that an antistatic substrate 11 ′ is provided instead of the substrate 11.
  • the support sheet 60 in the composite film 401 for forming a protective film is configured by laminating the back surface antistatic layer 17, the antistatic substrate 11′, and the adhesive layer 12 in this order in the thickness direction thereof. ..
  • one surface (sometimes referred to as “first surface” in the present specification) 60a of the support sheet 60 is the first surface 12a of the pressure-sensitive adhesive layer 12.
  • the back surface antistatic layer 17 and the antistatic substrate 11' contain an antistatic agent.
  • the surface resistivity of the back surface antistatic layer 17, which is the outermost layer on the support sheet 60 side, in the protective film-forming composite sheet 401 after expansion under the above conditions is 1.0 ⁇ 10 11 ⁇ / ⁇ . It can be: Then, after the protective film forming composite sheet 401 is expanded, when the semiconductor chip is separated from the support sheet and picked up, the circuit in the semiconductor chip can be further prevented from being damaged by charging.
  • the composition of the back surface antistatic layer 17 is adjusted.
  • the support sheet prepared from the protective film forming composite sheet 401, the protective film after cutting or the protective film forming film, and the semiconductor chip are laminated in this order in the divided laminate.
  • the semiconductor chip provided with the protective film or the protective film-forming film after cutting is picked up by separating from the support sheet, even if the divided laminate is obtained through an expanding step, It is possible to suppress damage due to electrification of the circuit in the semiconductor chip.
  • the protective film forming composite sheet 401 is used in the same manner as the case of the protective film forming composite sheet 101 and the protective film forming composite sheet 201.
  • the size and shape of each layer can be arbitrarily adjusted according to the purpose.
  • the protective film-forming composite sheet having both the antistatic substrate and the surface antistatic layer as the antistatic layer for example, in the protective film forming composite sheet shown in FIGS. Between the antistatic substrate 11' and a layer adjacent to the antistatic substrate 11' on the first surface 11a' side (more specifically, the adhesive layer 12 or the protective film forming film 13). In addition, a surface antistatic layer (for example, the surface antistatic layer 19 in the protective film forming composite sheet 301 shown in FIG. 11) is further provided.
  • the protective film-forming composite sheet 501 shown in FIG. 13 is an example thereof, and is obtained by replacing the base material 11 in the protective film-forming composite sheet 301 shown in FIG. 11 with an antistatic base material 11′.
  • the composite sheet 501 for forming a protective film is the same as the composite sheet 301 for forming a protective film except that an antistatic substrate 11 ′ is provided instead of the substrate 11.
  • the support sheet 70 in the protective film forming composite sheet 501 is configured by stacking the antistatic substrate 11′, the surface antistatic layer 19 and the pressure-sensitive adhesive layer 12 in this order in the thickness direction thereof. .. In other words, one surface (sometimes referred to as “first surface” in this specification) 70a of the support sheet 70 is the first surface 12a of the pressure-sensitive adhesive layer 12.
  • the antistatic substrate 11' and the surface antistatic layer 19 contain an antistatic agent.
  • the surface resistivity of the antistatic substrate 11 ′, which is the outermost layer on the support sheet 70 side, in the protective film-forming composite sheet 501 becomes 1.0 ⁇ 10 11 ⁇ / ⁇ or less.
  • the normal charging of the protective film forming composite sheet 501 is suppressed.
  • the structure of the antistatic substrate 11' is adjusted.
  • the static friction force of the test piece produced from the protective film-forming composite sheet 501 after heating at 70° C. for 1 minute becomes 20 N or less.
  • the separation-time charging of the laminate obtained using the protective film forming composite sheet 501 is suppressed.
  • destruction of the circuit in the semiconductor chip when separating the stacked body is suppressed.
  • the protective film forming composite sheet 501 is used in the same manner as the case of the protective film forming composite sheet 301 and the protective film forming composite sheet 201.
  • the size and shape of each layer can be arbitrarily adjusted according to the purpose.
  • the composite sheet for forming a protective film of the present embodiment may include all of the backside antistatic layer, the antistatic substrate and the surface antistatic layer as the antistatic layer.
  • the composite sheet for forming a protective film including all of the back surface antistatic layer, the antistatic substrate and the surface antistatic layer is, for example, formed on a support sheet and one surface (that is, the first surface) of the support sheet.
  • the protective sheet-forming film is formed, and the support sheet has a back surface antistatic layer, an antistatic substrate, a surface antistatic layer and an adhesive layer, which are laminated in this order in the thickness direction thereof.
  • a protective film-forming composite sheet more specifically, in the protective film-forming composite sheet 401 shown in FIG. 12, between the antistatic substrate 11′ and the pressure-sensitive adhesive layer 12, Examples thereof include those provided with a surface antistatic layer (for example, the surface antistatic layer 19 shown in FIG. 11).
  • the composite sheet for forming a protective film including all of the back surface antistatic layer, the antistatic substrate and the surface antistatic layer may be, for example, a support sheet and one surface (that is, the first surface) of the support sheet.
  • a protective film-forming film formed in, the support sheet, the back surface antistatic layer, an antistatic substrate and a surface antistatic layer are laminated in this order in the thickness direction thereof,
  • a protective film-forming composite sheet in which the surface antistatic layer is arranged toward the protective film-forming film side can be mentioned.
  • a protective film forming composite sheet more specifically, in the protective film forming composite sheet 401 shown in FIG. 12, instead of the pressure-sensitive adhesive layer 12, a surface antistatic layer (for example, the surface charging shown in FIG. 11 is used. Examples thereof include those provided with the prevention layer 19).
  • composite sheets for forming a protective film which are provided with a back surface antistatic layer, an antistatic substrate and a surface antistatic layer.
  • the protective film-forming composite sheet having two or more kinds selected from the group consisting of the back surface antistatic layer, the antistatic substrate and the surface antistatic layer is a protective film forming composite sheet having only one kind. This is more advantageous than the composite sheet in that it has a higher effect of suppressing static charge.
  • a composite sheet for forming a protective film which includes only one kind selected from the group consisting of a backside antistatic layer, an antistatic substrate and a surface antistatic layer, also has a sufficient effect of suppressing static charge.
  • such a sheet is advantageous in that it can be manufactured inexpensively and easily.
  • the total light transmittance of the support sheet in the composite sheet for forming a protective film is not particularly limited, but is preferably 70% or more, more preferably 75% or more, and particularly preferably 80% or more. preferable.
  • laser printing is performed by irradiating a laser beam on a surface of a protective film or a film for forming a protective film, which is attached to a semiconductor wafer or a semiconductor chip, on the side of a supporting sheet.
  • the protective film-forming film on which laser printing has been performed becomes a protective film on which characters and symbols are printed by curing.
  • the total light transmittance of the support sheet is the lower limit value or more, the laser printability of the protective film or the film for forming a protective film, and the print visibility of the protective film are improved, and the semiconductor chip or the protective film is cracked. Alternatively, the chip can be inspected with higher accuracy.
  • the upper limit of the total light transmittance of the support sheet in the protective film-forming composite sheet is not particularly limited, and the higher the better. Considering the ease of manufacturing the support sheet and the high degree of freedom in the configuration of the support sheet, the total light transmittance of the support sheet is preferably 99% or less.
  • the total light transmittance of the support sheet can be measured according to JIS K 7375:2008, as will be described later in Examples.
  • the haze of the support sheet in the composite sheet for forming a protective film is not particularly limited, but is preferably 55% or less, more preferably 50% or less, and particularly preferably 45% or less.
  • the haze of the support sheet is equal to or less than the upper limit value, the laser printability of the protective film or the protective film-forming film, the print visibility of the protective film, and the suitability for inspection of cracks or chips of the semiconductor chip or the protective film are improved. ..
  • the lower limit of haze of the support sheet in the protective film-forming composite sheet is not particularly limited, and the lower the better. Considering the ease of manufacturing the support sheet and the high degree of freedom in the configuration of the support sheet, the haze of the support sheet may be 40% or more.
  • the haze of the support sheet can be measured according to JIS K 7136-2000.
  • the scratch resistance of the antistatic layer in the composite sheet for forming a protective film affects the inspectability of the film for forming a protective film of the composite sheet.
  • the "scratch resistance of the antistatic layer” means the scratch resistance of the rubbed surface of the antistatic layer when the antistatic layer is rubbed by another object. If the antistatic layer has high scratch resistance, the entire surface of the antistatic layer is less likely to be scratched when contacting with another object. Therefore, when the protective film-forming film in the protective film-forming composite sheet is optically inspected through the antistatic layer, using a sensor, or visually, the variation in the inspection result depending on the inspection location is suppressed. And can be inspected with high accuracy.
  • the antistatic layer has low scratch resistance, at least a part of the surface of the antistatic layer is likely to be scratched during contact with another object. Therefore, when the protective film forming film in the protective film forming composite sheet is inspected as described above, the inspection result varies depending on the inspection location and the inspection accuracy becomes low.
  • the scratch resistance of the antistatic layer can be evaluated by the following method. That is, first, the surface of the pressing means used to apply a load to the antistatic layer (hereinafter referred to as “pressing surface”) is covered with flannel cloth. At this time, it is assumed that the pressing surface of the pressing means has a square shape with an area of 2 cm ⁇ 2 cm and is flat.
  • the thickness of the flannel cloth is not particularly limited, and may be 1 to 4 ⁇ m, for example, in that the reliability of the evaluation result is extremely high.
  • the pressing surface may be covered with one flannel cloth or a flannel cloth laminated sheet formed by laminating two or more flannel cloths in the thickness direction thereof. ..
  • each flannel cloth in the laminated sheet may be all the same, all may be different, or only a part thereof may be the same.
  • the total thickness thereof that is, the total thickness of the flannel cloths in the laminated sheet may be 1 to 4 ⁇ m.
  • the pressing surface of the pressing means covered with the flannel cloth is pressed against the surface of the antistatic layer.
  • the pressing means applies a load of 125 g/cm 2 to the antistatic layer and presses the pressing means with a straight line of 10 cm. Reciprocate 10 times at a distance. This rubs the antistatic layer while applying a load of 125 g/cm 2 through the flannel cloth.
  • a region having a width of 2 cm and a length of 10 cm is rubbed by the flannel cloth.
  • the scratch resistance of the antistatic layer can be evaluated by visually observing a region having an area of 2 cm ⁇ 2 cm in the surface of the antistatic layer rubbed through the flannel cloth, and confirming the presence or absence of a scratch. .. For example, if there are scratches at the observation site, streak-like scratches may be recognized, or the light reflectivity of the observation surface may decrease, resulting in a decrease in gloss. If no scratch is found, it can be determined that the scratch resistance is high, and if scratches are found, the scratch resistance is low.
  • the region to be visually observed may be any region rubbed by a flannel cloth and having a width of 2 cm and a length of 10 cm, for example, the center in the length direction of the region. It may be a region including a part or a region including an end portion in the same direction.
  • the antistatic layer in the composite sheet for forming a protective film preferably has no scratch when the scratch resistance is evaluated by the above method.
  • the antistatic layer means the backside antistatic layer, the antistatic substrate, and the surface antistatic layer described above.
  • a more preferable composite sheet for forming a protective film includes, for example, one provided with such a backside antistatic layer having scratch resistance or an antistatic substrate.
  • the composite film for forming a protective film includes, as the antistatic layer, two or more kinds selected from the group consisting of a backside antistatic layer, an antistatic substrate and a surface antistatic layer, at least the protective layer is protected.
  • the outermost layer of the composite sheet for film formation be an object of evaluation of scratch resistance. More specifically, for example, in the case where the composite sheet for forming a protective film has both a back surface antistatic layer and an antistatic substrate, and when it has both a back surface antistatic layer and a surface antistatic layer.
  • at least the back surface antistatic layer be an object of evaluation of scratch resistance.
  • the composite sheet for forming a protective film is provided with both the antistatic substrate and the surface antistatic layer
  • the protective film-forming composite sheet is provided with all of the back surface antistatic layer, the antistatic substrate and the surface antistatic layer, at least the back surface antistatic layer is to be evaluated for scratch resistance. preferable.
  • the base material has a sheet shape or a film shape, and examples of the constituent material thereof include various resins.
  • the resin include polyethylene such as low density polyethylene (LDPE), linear low density polyethylene (LLDPE) and high density polyethylene (HDPE); other than polyethylene such as polypropylene, polybutene, polybutadiene, polymethylpentene and norbornene resin.
  • Polyolefin Ethylene-vinyl acetate copolymer, ethylene-(meth)acrylic acid copolymer, ethylene-(meth)acrylic acid ester copolymer, ethylene-norbornene copolymer and other ethylene-based copolymers (ethylene as a monomer); Polyvinyl chloride, vinyl chloride resin such as vinyl chloride copolymer (resin obtained by using vinyl chloride as a monomer); polystyrene; polycycloolefin; polyethylene terephthalate, polyethylene Polyesters such as naphthalate, polybutylene terephthalate, polyethylene isophthalate, polyethylene-2,6-naphthalene dicarboxylate, wholly aromatic polyesters in which all constituent units have aromatic cyclic groups; Polymers; poly(meth)acrylic acid ester; polyurethane; polyurethane acrylate; polyimide; polyamide; polycarbonate; fluororesin; polyacetal; modified poly
  • the resin also include polymer alloys such as a mixture of the polyester and other resins.
  • the polymer alloy of the polyester and the resin other than the polyester is preferably one in which the amount of the resin other than the polyester is relatively small.
  • the resin for example, a crosslinked resin obtained by crosslinking one or two or more of the above-exemplified resins; a modified ionomer using one or more of the above-exemplified resins. Resins are also included.
  • the resin constituting the base material may be only one kind, or two or more kinds, and in the case of two or more kinds, the combination and the ratio thereof can be arbitrarily selected.
  • the base material may be composed of one layer (single layer) or may be composed of two or more layers, and when composed of a plurality of layers, the plurality of layers may be the same or different from each other.
  • the combination of these plural layers is not particularly limited.
  • the thickness of the substrate is preferably 30 to 300 ⁇ m, more preferably 50 to 140 ⁇ m.
  • the thickness of the base material is in such a range, the flexibility of the composite sheet for forming a protective film and the adhesiveness to a semiconductor wafer or a semiconductor chip are further improved.
  • the “base material thickness” means the thickness of the entire base material, and for example, the thickness of the base material composed of a plurality of layers means the total thickness of all layers constituting the base material. means.
  • the base material is preferably one with high thickness accuracy, that is, one with suppressed thickness variation regardless of the part.
  • materials that can be used to form such a base material having high thickness accuracy include, for example, polyethylene, polyolefins other than polyethylene, polyethylene terephthalate, ethylene-vinyl acetate copolymer, and the like. Is mentioned.
  • the base material may contain various known additives such as a filler, a colorant, an antioxidant, an organic lubricant, a catalyst, a softening agent (plasticizer), in addition to the main constituent materials such as the resin.
  • the base material may be transparent or opaque, may be colored depending on the purpose, and may have another layer deposited thereon.
  • the base material is preferably one that transmits energy rays.
  • the substrate is preferably transparent.
  • the surface facing the antistatic layer is roughened by sandblasting, solvent treatment, etc.; corona discharge treatment, electron beam irradiation treatment, plasma treatment. Ozone/ultraviolet irradiation treatment, flame treatment, chromic acid treatment, oxidation treatment such as hot air treatment; and the like are preferable, and corona discharge treatment is particularly preferable.
  • the substrate is roughened by sandblasting, solvent treatment, or the like in order to improve adhesion with a layer provided thereon (eg, adhesive layer, intermediate layer or protective film forming film); corona discharge treatment , Electron beam irradiation treatment, plasma treatment, ozone/ultraviolet ray irradiation treatment, flame treatment, chromic acid treatment, hot air treatment and other oxidation treatments;
  • a layer provided thereon eg, adhesive layer, intermediate layer or protective film forming film
  • corona discharge treatment Electron beam irradiation treatment, plasma treatment, ozone/ultraviolet ray irradiation treatment, flame treatment, chromic acid treatment, hot air treatment and other oxidation treatments
  • the surface of the base material may be treated with a primer.
  • the base material can be manufactured by a known method.
  • a base material containing a resin can be manufactured by molding a resin composition containing the resin.
  • the adhesive layer is in the form of a sheet or a film and contains an adhesive.
  • the pressure-sensitive adhesive include pressure-sensitive adhesive resins such as acrylic resins, urethane-based resins, rubber-based resins, silicone-based resins, epoxy-based resins, polyvinyl ethers, polycarbonates, ester-based resins, etc., and acrylic-based resins are preferred. ..
  • adhesive resin includes both a resin having an adhesive property and a resin having an adhesive property.
  • the adhesive resin is not only a resin having adhesiveness itself, but also a resin that exhibits adhesiveness when used in combination with other components such as additives, and adhesiveness due to the presence of a trigger such as heat or water. Resins and the like are also included.
  • the pressure-sensitive adhesive layer may be composed of one layer (single layer) or may be composed of two or more layers. When composed of a plurality of layers, these layers may be the same or different from each other. The combination of these plural layers is not particularly limited.
  • the thickness of the pressure-sensitive adhesive layer is preferably 1 to 100 ⁇ m, more preferably 1 to 60 ⁇ m, and particularly preferably 1 to 30 ⁇ m.
  • the "thickness of the pressure-sensitive adhesive layer” means the total thickness of the pressure-sensitive adhesive layer, for example, the thickness of the pressure-sensitive adhesive layer composed of a plurality of layers is the total of all layers constituting the pressure-sensitive adhesive layer. Means the thickness of.
  • the pressure-sensitive adhesive layer may be transparent or opaque, and may be colored depending on the purpose.
  • the adhesive layer is preferably one that transmits energy rays.
  • the adhesive layer is preferably transparent.
  • the adhesive layer may be formed using an energy ray curable adhesive or may be formed using a non-energy ray curable adhesive. That is, the pressure-sensitive adhesive layer may be either energy ray curable or non-energy ray curable.
  • the energy ray-curable pressure-sensitive adhesive layer can easily adjust physical properties before and after curing.
  • the pressure-sensitive adhesive layer can be formed using a pressure-sensitive adhesive composition containing a pressure-sensitive adhesive.
  • the pressure-sensitive adhesive composition can be formed on a target site by applying the pressure-sensitive adhesive composition to the surface on which the pressure-sensitive adhesive layer is to be formed, and drying it as necessary.
  • the ratio of the contents of the components that do not vaporize at room temperature in the pressure-sensitive adhesive composition is usually the same as the ratio of the contents of the components in the pressure-sensitive adhesive layer.
  • the “normal temperature” means a temperature at which it is not cooled or heated, that is, a normal temperature, and examples thereof include a temperature of 15 to 25° C.
  • the coating of the pressure-sensitive adhesive composition may be performed by a known method, for example, air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, screen coater.
  • a known method for example, air knife coater, blade coater, bar coater, gravure coater, roll coater, roll knife coater, curtain coater, die coater, knife coater, screen coater.
  • Examples include a method using various coaters such as a Meyer bar coater and a kiss coater.
  • the pressure-sensitive adhesive composition may be applied on the base material and dried as necessary to laminate the pressure-sensitive adhesive layer on the base material.
  • the pressure-sensitive adhesive layer is provided on the base material, for example, the pressure-sensitive adhesive composition is applied onto the release film and dried if necessary to form the pressure-sensitive adhesive layer on the release film.
  • the exposed surface of the pressure-sensitive adhesive layer may be attached to one surface of the base material to laminate the pressure-sensitive adhesive layer on the base material.
  • the release film may be removed at any timing during the manufacturing process or the use process of the protective film-forming composite sheet.
  • the drying conditions of the pressure-sensitive adhesive composition are not particularly limited, but when the pressure-sensitive adhesive composition contains the solvent described below, it is preferable to heat-dry it.
  • the pressure-sensitive adhesive composition containing a solvent is preferably dried, for example, at 70 to 130° C. for 10 seconds to 5 minutes.
  • the pressure-sensitive adhesive composition containing the energy ray-curable pressure-sensitive adhesive that is, the energy ray-curable pressure-sensitive adhesive composition
  • the energy ray-curable pressure-sensitive adhesive composition for example, non-energy ray-curable pressure-sensitive adhesive Adhesive composition (I-1) containing resin (I-1a) (hereinafter sometimes abbreviated as “adhesive resin (I-1a)”) and an energy ray-curable compound; non-energy Energy ray curable adhesive resin (I-2a) in which an unsaturated group is introduced into the side chain of the ray curable adhesive resin (I-1a) (hereinafter referred to as “adhesive resin (I-2a)”
  • a pressure-sensitive adhesive composition (I-2) containing may be abbreviated); a pressure-sensitive adhesive composition (I-3) containing the pressure-sensitive adhesive resin (I-2a) and an energy ray-curable compound, etc. Is mentioned.
  • the pressure-sensitive adhesive composition (I-1) contains the non-energy ray-curable pressure-sensitive adhesive resin (I-1a) and the energy ray-curable compound.
  • the adhesive resin (I-1a) is preferably an acrylic resin.
  • the acrylic resin include acrylic polymers having at least a structural unit derived from an alkyl (meth)acrylate ester.
  • the acrylic resin may have only one type of structural unit, or may have two or more types, and in the case of two or more types, their combination and ratio can be arbitrarily selected.
  • Examples of the (meth)acrylic acid alkyl ester include those in which the alkyl group constituting the alkyl ester has 1 to 20 carbon atoms, and the alkyl group is linear or branched. Is preferred.
  • the (meth)acrylic acid alkyl ester more specifically, methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, (meth)acrylic acid n-butyl, isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, heptyl (meth)acrylate, 2-Ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate,
  • the acrylic polymer preferably has a structural unit derived from a (meth)acrylic acid alkyl ester in which the alkyl group has 4 or more carbon atoms.
  • the alkyl group preferably has 4 to 12 carbon atoms, and more preferably 4 to 8 carbon atoms.
  • the (meth)acrylic acid alkyl ester in which the alkyl group has 4 or more carbon atoms is preferably an acrylic acid alkyl ester.
  • the acrylic polymer preferably further has a structural unit derived from a functional group-containing monomer, in addition to the structural unit derived from the (meth)acrylic acid alkyl ester.
  • a functional group-containing monomer for example, the functional group becomes a starting point of crosslinking by reacting with a crosslinking agent described later, or the functional group reacts with an unsaturated group in an unsaturated group-containing compound described later.
  • the acrylic polymer include those capable of introducing an unsaturated group into the side chain.
  • Examples of the functional group in the functional group-containing monomer include a hydroxyl group, a carboxy group, an amino group, and an epoxy group. That is, examples of the functional group-containing monomer include a hydroxyl group-containing monomer, a carboxy group-containing monomer, an amino group-containing monomer, and an epoxy group-containing monomer.
  • hydroxyl group-containing monomer examples include hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, (meth) Hydroxyalkyl (meth)acrylates such as 2-hydroxybutyl acrylate, 3-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate; non-(meth)acrylic non-adhesives such as vinyl alcohol and allyl alcohol. Examples thereof include saturated alcohols (unsaturated alcohols having no (meth)acryloyl skeleton).
  • Examples of the carboxy group-containing monomer include ethylenically unsaturated monocarboxylic acids (monocarboxylic acids having an ethylenically unsaturated bond) such as (meth)acrylic acid and crotonic acid; fumaric acid, itaconic acid, maleic acid, citracone Ethylenically unsaturated dicarboxylic acids such as acids (dicarboxylic acids having an ethylenically unsaturated bond); anhydrides of the above-mentioned ethylenically unsaturated dicarboxylic acids; and (meth)acrylic acid carboxyalkyl esters such as 2-carboxyethyl methacrylate. Be done.
  • monocarboxylic acids having an ethylenically unsaturated bond such as (meth)acrylic acid and crotonic acid
  • fumaric acid, itaconic acid maleic acid, citracone
  • the functional group-containing monomer is preferably a hydroxyl group-containing monomer or a carboxy group-containing monomer, more preferably a hydroxyl group-containing monomer.
  • the functional group-containing monomer constituting the acrylic polymer may be only one kind, or two or more kinds, and when there are two or more kinds, the combination and the ratio thereof can be arbitrarily selected.
  • the content of the structural unit derived from the functional group-containing monomer is preferably 1 to 35% by mass, more preferably 2 to 32% by mass, based on the total amount of the structural unit. It is particularly preferably 3 to 30% by mass.
  • the acrylic polymer may further have a constitutional unit derived from another monomer in addition to the constitutional unit derived from the (meth)acrylic acid alkyl ester and the constitutional unit derived from the functional group-containing monomer.
  • the other monomer is not particularly limited as long as it can be copolymerized with (meth)acrylic acid alkyl ester and the like. Examples of the other monomer include styrene, ⁇ -methylstyrene, vinyltoluene, vinyl formate, vinyl acetate, acrylonitrile, and acrylamide.
  • the other monomer constituting the acrylic polymer may be only one kind, or two or more kinds, and in the case of two or more kinds, the combination and the ratio thereof can be arbitrarily selected.
  • the acrylic polymer can be used as the non-energy ray curable adhesive resin (I-1a).
  • the functional group in the acrylic polymer is reacted with an unsaturated group-containing compound having an energy ray-polymerizable unsaturated group (energy ray-polymerizable group) to obtain the above-mentioned energy ray-curable tackiness. It can be used as a resin (I-2a).
  • the adhesive resin (I-1a) contained in the adhesive composition (I-1) may be only one kind, or may be two or more kinds, and in the case of two or more kinds, the combination and the ratio thereof are arbitrary. You can choose.
  • the ratio of the content of the pressure-sensitive adhesive resin (I-1a) to the total mass of the pressure-sensitive adhesive composition (I-1) is preferably 5 to 99% by mass. It is more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass.
  • Examples of the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-1) include monomers or oligomers having an energy ray-polymerizable unsaturated group and curable by irradiation with energy rays.
  • examples of the monomer include trimethylolpropane tri(meth)acrylate, pentaerythritol(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4 -Poly(meth)acrylate such as butylene glycol di(meth)acrylate and 1,6-hexanediol (meth)acrylate; urethane (meth)acrylate; polyester (meth)acrylate; polyether (meth)acrylate; epoxy ( Examples thereof include (meth)acrylate.
  • examples of the oligomer include oligomers obtained by polymerizing the above-exemplified monomers.
  • the energy ray-curable compound is preferably a urethane (meth)acrylate or a urethane (meth)acrylate oligomer in that it has a relatively large molecular weight and is unlikely to reduce the storage elastic modulus of the pressure-sensitive adhesive layer.
  • the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-1) may be only one kind, or may be two or more kinds, and in the case of two or more kinds, a combination and a ratio thereof may be arbitrarily selected. ..
  • the ratio of the content of the energy ray-curable compound with respect to the total mass of the pressure-sensitive adhesive composition (I-1) is preferably 1 to 95% by mass, It is more preferably 5 to 90% by mass, and particularly preferably 10 to 85% by mass.
  • a pressure-sensitive adhesive composition ( I-1) preferably further contains a crosslinking agent.
  • the cross-linking agent reacts with the functional group to cross-link the adhesive resins (I-1a).
  • the cross-linking agent include isocyanate-based cross-linking agents (cross-linking agents having an isocyanate group) such as tolylene diisocyanate, hexamethylene diisocyanate, xylylene diisocyanate, and adducts of these diisocyanates; epoxy-based cross-linking agents such as ethylene glycol glycidyl ether ( Glycidyl group-containing cross-linking agent); Hexa[1-(2-methyl)-aziridinyl]triphosphatriazine and other aziridine-based cross-linking agents (aziridinyl group-containing cross-linking agents); Aluminum chelate and other metal chelate-based cross-linking agents (metals) A cross-linking agent having a chelate structure); an isocyanurate-based cross-linking agent (cross-linking agent having an iso
  • the pressure-sensitive adhesive composition (I-1) may contain only one type of crosslinking agent, or two or more types of crosslinking agents, and in the case of two or more types, their combination and ratio can be arbitrarily selected.
  • the content of the crosslinking agent is preferably 0.01 to 50 parts by mass with respect to 100 parts by mass of the content of the adhesive resin (I-1a), It is more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.
  • the pressure-sensitive adhesive composition (I-1) may further contain a photopolymerization initiator.
  • the pressure-sensitive adhesive composition (I-1) containing the photopolymerization initiator is sufficiently cured even when irradiated with a relatively low energy ray such as ultraviolet rays.
  • photopolymerization initiator examples include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, benzoin methyl benzoate, benzoin dimethyl ketal, and other benzoin compounds; acetophenone, 2-hydroxy Acetophenone compounds such as 2-methyl-1-phenyl-propan-1-one and 2,2-dimethoxy-1,2-diphenylethan-1-one; bis(2,4,6-trimethylbenzoyl)phenylphosphine Acylphosphine oxide compounds such as oxides and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; ⁇ -ketol compounds such as 1-hydroxycyclohexyl phenyl ketone; azo Azo compounds
  • the photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-1) may be only one kind, or may be two or more kinds, and in the case of two or more kinds, their combination and ratio can be arbitrarily selected.
  • the content of the photopolymerization initiator is preferably 0.01 to 20 parts by mass with respect to 100 parts by mass of the energy ray-curable compound, and 0 It is more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass.
  • the pressure-sensitive adhesive composition (I-1) may contain other additives that do not correspond to any of the above components, as long as the effects of the present invention are not impaired.
  • the other additives include antistatic agents, antioxidants, softening agents (plasticizers), fillers (fillers), rust inhibitors, colorants (pigments, dyes), sensitizers, tackifiers.
  • known additives such as a reaction retarder, a crosslinking accelerator (catalyst), and an inter-layer migration inhibitor.
  • the reaction retarder means, for example, an undesired crosslinking reaction in the adhesive composition (I-1) during storage due to the action of the catalyst mixed in the adhesive composition (I-1). It is a component for suppressing the progress.
  • the inter-layer migration inhibitor is, for example, a component for suppressing the migration of components contained in a layer adjacent to the pressure-sensitive adhesive layer, such as a protective film forming film, to the pressure-sensitive adhesive layer.
  • the inter-layer migration inhibitor include the same components as those targeted for migration inhibition. For example, when the migration inhibition target is the epoxy resin in the protective film forming film, the same type of epoxy resin can be used.
  • the other additives contained in the pressure-sensitive adhesive composition (I-1) may be only one kind, or two or more kinds, and in the case of two or more kinds, their combination and ratio can be arbitrarily selected.
  • the content of other additives in the pressure-sensitive adhesive composition (I-1) is not particularly limited and may be appropriately selected depending on the type.
  • the pressure-sensitive adhesive composition (I-1) may contain a solvent. Since the pressure-sensitive adhesive composition (I-1) contains a solvent, the suitability for coating on the surface to be coated is improved.
  • the solvent is preferably an organic solvent
  • examples of the organic solvent include ketones such as methyl ethyl ketone and acetone; esters (carboxylic acid esters) such as ethyl acetate; ethers such as tetrahydrofuran and dioxane; cyclohexane, n-hexane and the like. And aliphatic hydrocarbons; aromatic hydrocarbons such as toluene and xylene; alcohols such as 1-propanol and 2-propanol.
  • the solvent used in the production of the adhesive resin (I-1a) may be directly used in the adhesive composition (I-1) without being removed from the adhesive resin (I-1a).
  • the same or different kind of solvent as that used in the production of the adhesive resin (I-1a) may be added separately during the production of the adhesive composition (I-1).
  • the solvent contained in the pressure-sensitive adhesive composition (I-1) may be only one kind, or may be two or more kinds, and in the case of two or more kinds, their combination and ratio can be arbitrarily selected.
  • the content of the solvent in the pressure-sensitive adhesive composition (I-1) is not particularly limited and may be adjusted as appropriate.
  • the pressure-sensitive adhesive composition (I-2) is an energy-ray-curable pressure-sensitive adhesive resin in which an unsaturated group is introduced into the side chain of the non-energy-ray-curable pressure-sensitive adhesive resin (I-1a). It contains (I-2a).
  • the adhesive resin (I-2a) can be obtained, for example, by reacting the functional group in the adhesive resin (I-1a) with an unsaturated group-containing compound having an energy ray-polymerizable unsaturated group.
  • the unsaturated group-containing compound can bond with the adhesive resin (I-1a) by reacting with a functional group in the adhesive resin (I-1a) in addition to the energy ray-polymerizable unsaturated group.
  • a functional group in the adhesive resin (I-1a) in addition to the energy ray-polymerizable unsaturated group.
  • It is a compound having a group.
  • the energy ray-polymerizable unsaturated group include a (meth)acryloyl group, a vinyl group (ethenyl group), an allyl group (2-propenyl group), and the like, and a (meth)acryloyl group is preferable.
  • Examples of the group capable of binding to the functional group in the adhesive resin (I-1a) include an isocyanate group and a glycidyl group capable of binding to a hydroxyl group or an amino group, and a hydroxyl group and an amino group capable of binding to a carboxy group or an epoxy group. Etc.
  • Examples of the unsaturated group-containing compound include (meth)acryloyloxyethyl isocyanate, (meth)acryloyl isocyanate, and glycidyl (meth)acrylate.
  • the adhesive resin (I-2a) contained in the adhesive composition (I-2) may be only one kind, or may be two or more kinds, and in the case of two or more kinds, the combination and the ratio thereof are arbitrary. You can choose.
  • the ratio of the content of the pressure-sensitive adhesive resin (I-2a) to the total mass of the pressure-sensitive adhesive composition (I-2) is preferably 5 to 99% by mass. It is more preferably 10 to 95% by mass, and particularly preferably 10 to 90% by mass.
  • the adhesive resin (I-2a) for example, when the same acrylic polymer having a constitutional unit derived from a functional group-containing monomer as in the adhesive resin (I-1a) is used, the adhesive composition ( I-2) may further contain a crosslinking agent.
  • Examples of the cross-linking agent in the pressure-sensitive adhesive composition (I-2) include the same cross-linking agents in the pressure-sensitive adhesive composition (I-1).
  • the crosslinking agent contained in the pressure-sensitive adhesive composition (I-2) may be only one kind, or may be two or more kinds, and in the case of two or more kinds, their combination and ratio can be arbitrarily selected.
  • the content of the crosslinking agent is preferably 0.01 to 50 parts by mass relative to 100 parts by mass of the content of the adhesive resin (I-2a), It is more preferably 0.1 to 20 parts by mass, and particularly preferably 0.3 to 15 parts by mass.
  • the pressure-sensitive adhesive composition (I-2) may further contain a photopolymerization initiator.
  • the pressure-sensitive adhesive composition (I-2) containing the photopolymerization initiator is sufficiently cured even when irradiated with a relatively low energy ray such as ultraviolet rays.
  • Examples of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-2) include the same as the photopolymerization initiator in the pressure-sensitive adhesive composition (I-1).
  • the photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-2) may be only one type, or may be two or more types, and in the case of two or more types, their combination and ratio can be arbitrarily selected.
  • the content of the photopolymerization initiator is preferably 0.01 to 20 parts by mass with respect to 100 parts by mass of the content of the adhesive resin (I-2a). It is more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass.
  • the pressure-sensitive adhesive composition (I-2) may contain other additives that do not correspond to any of the above components, as long as the effects of the present invention are not impaired. Further, the pressure-sensitive adhesive composition (I-2) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1). Examples of the other additive and solvent in the pressure-sensitive adhesive composition (I-2) include the same as the other additives and solvent in the pressure-sensitive adhesive composition (I-1). The other additive and solvent contained in the pressure-sensitive adhesive composition (I-2) may be only one kind, or two or more kinds, and in the case of two or more kinds, their combination and ratio are arbitrary. You can choose to. The contents of the other additives and the solvent of the pressure-sensitive adhesive composition (I-2) are not particularly limited, and may be appropriately selected depending on the type.
  • the pressure-sensitive adhesive composition (I-3) contains the pressure-sensitive adhesive resin (I-2a) and the energy ray-curable compound.
  • the ratio of the content of the pressure-sensitive adhesive resin (I-2a) to the total mass of the pressure-sensitive adhesive composition (I-3) is preferably 5 to 99% by mass. It is more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass.
  • Examples of the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-3) include monomers and oligomers having an energy ray-polymerizable unsaturated group and curable by irradiation with energy rays. Examples thereof include the same energy ray-curable compounds contained in the product (I-1).
  • the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-3) may be only one kind, or may be two or more kinds, and in the case of two or more kinds, a combination and a ratio thereof may be arbitrarily selected. ..
  • the content of the energy ray-curable compound is 0.01 to 300 parts by mass based on 100 parts by mass of the adhesive resin (I-2a). It is preferably 0.03 to 200 parts by mass, more preferably 0.05 to 100 parts by mass.
  • the pressure-sensitive adhesive composition (I-3) may further contain a photopolymerization initiator.
  • the curing reaction of the pressure-sensitive adhesive composition (I-3) containing a photopolymerization initiator sufficiently proceeds even when irradiated with a relatively low energy ray such as ultraviolet rays.
  • Examples of the photopolymerization initiator in the pressure-sensitive adhesive composition (I-3) include the same photopolymerization initiators in the pressure-sensitive adhesive composition (I-1).
  • the photopolymerization initiator contained in the pressure-sensitive adhesive composition (I-3) may be only one kind, or two or more kinds, and in the case of two or more kinds, their combination and ratio can be arbitrarily selected.
  • the content of the photopolymerization initiator is 0.01 to 100 parts by mass based on the total content of the pressure-sensitive adhesive resin (I-2a) and the energy ray-curable compound.
  • the amount is preferably 20 parts by mass, more preferably 0.03 to 10 parts by mass, and particularly preferably 0.05 to 5 parts by mass.
  • the pressure-sensitive adhesive composition (I-3) may contain other additives that do not correspond to any of the above components, as long as the effects of the present invention are not impaired. Further, the pressure-sensitive adhesive composition (I-3) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1). Examples of the other additive and solvent in the pressure-sensitive adhesive composition (I-3) include the same as the other additives and solvent in the pressure-sensitive adhesive composition (I-1). The other additives and solvent contained in the pressure-sensitive adhesive composition (I-3) may be only one kind, or two or more kinds, and in the case of two or more kinds, their combination and ratio are arbitrary. You can choose to. The contents of the other additives and the solvent of the pressure-sensitive adhesive composition (I-3) are not particularly limited, and may be appropriately selected depending on the type.
  • Examples of the pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3) include non-energy-ray-curable pressure-sensitive adhesive compositions, in addition to the energy-ray-curable pressure-sensitive adhesive composition.
  • Examples of the non-energy ray curable pressure sensitive adhesive composition include non-energy ray curable materials such as acrylic resins, urethane resins, rubber resins, silicone resins, epoxy resins, polyvinyl ethers, polycarbonates and ester resins.
  • the pressure-sensitive adhesive composition (I-4) containing an adhesive resin (I-1a) is preferable, and the one containing an acrylic resin is preferable.
  • the pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3) preferably contain one or more cross-linking agents, and the content thereof is the above-mentioned pressure-sensitive adhesive composition. This can be the same as the case of (I-1) or the like.
  • Adhesive resin (I-1a) examples of the adhesive resin (I-1a) in the adhesive composition (I-4) include the same adhesive resin (I-1a) in the adhesive composition (I-1).
  • the adhesive resin (I-1a) contained in the adhesive composition (I-4) may be only one kind, or may be two or more kinds, and in the case of two or more kinds, the combination and the ratio thereof are arbitrary. You can choose.
  • the ratio of the content of the pressure-sensitive adhesive resin (I-1a) to the total mass of the pressure-sensitive adhesive composition (I-4) is preferably 5 to 99% by mass. It is more preferably 10 to 95% by mass, and particularly preferably 15 to 90% by mass.
  • the pressure-sensitive adhesive composition ( I-4) preferably further contains a crosslinking agent.
  • Examples of the crosslinking agent in the pressure-sensitive adhesive composition (I-4) include the same as the crosslinking agent in the pressure-sensitive adhesive composition (I-1).
  • the crosslinking agent contained in the pressure-sensitive adhesive composition (I-4) may be only one kind, or may be two or more kinds, and in the case of two or more kinds, their combination and ratio can be arbitrarily selected.
  • the content of the crosslinking agent is preferably 0.01 to 50 parts by mass with respect to 100 parts by mass of the content of the adhesive resin (I-1a), It is more preferably 0.1 to 47 parts by mass, and particularly preferably 0.3 to 44 parts by mass.
  • the pressure-sensitive adhesive composition (I-4) may contain other additives which do not correspond to any of the above components, as long as the effects of the present invention are not impaired. Further, the pressure-sensitive adhesive composition (I-4) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1). Examples of the other additive and solvent in the pressure-sensitive adhesive composition (I-4) include the same as the other additives and solvent in the pressure-sensitive adhesive composition (I-1). The other additive and solvent contained in the pressure-sensitive adhesive composition (I-4) may be only one kind, or two or more kinds, and in the case of two or more kinds, their combination and ratio are arbitrary. You can choose to. The contents of the other additives and the solvent of the pressure-sensitive adhesive composition (I-4) are not particularly limited, and may be appropriately selected depending on the type.
  • the adhesive layer is preferably non-energy ray curable. This is because if the pressure-sensitive adhesive layer is energy ray-curable, it may not be possible to prevent the pressure-sensitive adhesive layer from being simultaneously cured when the protective film-forming film is cured by irradiation with energy rays. If the pressure-sensitive adhesive layer is cured at the same time as the protective film-forming film, the cured product of the protective film-forming film and the pressure-sensitive adhesive layer may stick to the interface between them so that they cannot be peeled off.
  • the semiconductor chip with the protective film cannot be normally picked up. If the pressure-sensitive adhesive layer is non-energy ray curable, such a problem can be reliably avoided, and the semiconductor chip with a protective film can be more easily picked up.
  • the pressure-sensitive adhesive compositions other than the pressure-sensitive adhesive compositions (I-1) to (I-3) and the pressure-sensitive adhesive compositions (I-1) to (I-3) such as the pressure-sensitive adhesive composition (I-4) It is obtained by blending the above-mentioned pressure-sensitive adhesive and, if necessary, each component for constituting the pressure-sensitive adhesive composition, such as components other than the above-mentioned pressure-sensitive adhesive.
  • the order of adding each component is not particularly limited, and two or more components may be added simultaneously.
  • a solvent it may be used by mixing the solvent with any compounding component other than the solvent and diluting this compounding component in advance, or by diluting any compounding component other than the solvent in advance.
  • the solvent may be used as a mixture with these ingredients.
  • the method of mixing each component at the time of compounding is not particularly limited, and a known method such as a method of mixing by rotating a stirring bar or a stirring blade; a method of mixing using a mixer; a method of mixing by adding ultrasonic waves It may be selected appropriately.
  • the temperature and time during addition and mixing of each component are not particularly limited as long as each compounding component does not deteriorate, and may be appropriately adjusted, but the temperature is preferably 15 to 30°C.
  • the backside antistatic layer is in the form of a sheet or film and contains an antistatic agent.
  • the backside antistatic layer may contain a resin in addition to the antistatic agent.
  • the backside antistatic layer may be composed of one layer (single layer) or may be composed of two or more layers. When composed of a plurality of layers, these layers may be the same as each other. They may be different, and the combination of these plural layers is not particularly limited.
  • the thickness of the back surface antistatic layer is preferably 200 nm or less, more preferably 180 nm or less, and may be 100 nm or less, for example.
  • the backside antistatic layer having a thickness of 200 nm or less since the amount of the antistatic agent used can be reduced while maintaining sufficient antistatic ability, a composite film for forming a protective film including such a backside antistatic layer can be obtained. The cost of the seat can be reduced.
  • the thickness of the backside antistatic layer is 100 nm or less, in addition to the above-described effects, the provision of the backside antistatic layer suppresses the fluctuation of the characteristics of the protective film-forming composite sheet to the minimum The effect that it can be obtained is also obtained.
  • the “thickness of the backside antistatic layer” means the total thickness of the backside antistatic layer, and for example, the thickness of the backside antistatic layer composed of a plurality of layers means all the backside antistatic layers. Means the total thickness of the layers.
  • the thickness of the back surface antistatic layer is preferably 10 nm or more, and may be any of 20 nm or more, 30 nm or more, 40 nm or more, and 65 nm or more.
  • the backside antistatic layer having a thickness of not less than the above lower limit is easier to form and has a more stable structure.
  • the thickness of the backside antistatic layer can be appropriately adjusted within the range set by arbitrarily combining the above-mentioned preferred lower limit value and upper limit value.
  • the backside antistatic layer preferably has a thickness of 10 to 200 nm, for example, any of 20 nm to 200 nm, 30 to 200 nm, 40 to 180 nm, and 65 to 100 nm. Good. However, these are examples of the thickness of the back surface antistatic layer.
  • the backside antistatic layer may be transparent or opaque, and may be colored depending on the purpose.
  • the backside antistatic layer is preferably one that transmits energy rays.
  • the rear antistatic layer is preferably transparent.
  • the backside antistatic layer can be formed using the antistatic composition (VI-1) containing the antistatic agent. For example, by applying the antistatic composition (VI-1) to the surface on which the backside antistatic layer is to be formed and drying it as necessary, the backside antistatic layer can be formed at the target site.
  • the content ratio of the components that do not vaporize at room temperature is usually the same as the content ratio of the components in the backside antistatic layer.
  • the antistatic composition (VI-1) may be applied by a known method, for example, the same method as in the case of the pressure-sensitive adhesive composition described above.
  • the antistatic composition (VI-1) is applied onto the base material and dried if necessary to prevent the back surface antistatic layer on the base material.
  • the layers may be stacked.
  • the antistatic composition (VI-1) is applied onto the release film, and dried if necessary to form a back surface on the release film.
  • You may laminate
  • the release film may be removed at any timing during the manufacturing process or the use process of the protective film-forming composite sheet.
  • the drying conditions of the antistatic composition (VI-1) are not particularly limited, but when the antistatic composition (VI-1) contains the solvent described below, it is preferable to heat dry.
  • the antistatic composition (VI-1) containing a solvent is preferably dried, for example, at 40 to 130° C. for 10 seconds to 5 minutes.
  • the antistatic composition (VI-1) may contain the resin in addition to the antistatic agent.
  • the antistatic agent may be a known one such as a conductive compound and is not particularly limited.
  • the antistatic agent may be, for example, a low molecular weight compound or a high molecular weight compound (in other words, an oligomer or a polymer).
  • examples of the low molecular weight compound include various ionic liquids.
  • the ionic liquid include known ones such as pyrimidinium salt, pyridinium salt, piperidinium salt, pyrrolidinium salt, imidazolium salt, morpholinium salt, sulfonium salt, phosphonium salt and ammonium salt.
  • examples of the polymer compound include poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (sometimes referred to as “PEDOT/PSS” in the present specification), polypyrrole, Examples include carbon nanotubes.
  • the polypyrrole is an oligomer or polymer having a plurality (a large number) of pyrrole skeletons.
  • the antistatic agent contained in the antistatic composition (VI-1) may be only one kind, or two or more kinds, and in the case of two or more kinds, their combination and ratio can be arbitrarily selected.
  • the ratio of the content of the antistatic agent to the total content of all components other than the solvent may be, for example, 0.1 to 30% by mass or 0.5 to 15% by mass.
  • the ratio is equal to or more than the lower limit value, the effect of suppressing peeling charge of the protective film-forming composite sheet becomes high, and as a result, the effect of suppressing foreign matter mixing between the protective film forming film and the semiconductor wafer is high.
  • the ratio is not more than the upper limit value, the strength of the back surface antistatic layer becomes higher.
  • the resin contained in the antistatic composition (VI-1) and the backside antistatic layer may be either curable or non-curable. It may be either.
  • Examples of the preferable resin include those that function as a binder resin.
  • examples of the resin include acrylic resins, and energy ray curable acrylic resins are preferable.
  • examples of the acrylic resin in the antistatic composition (VI-1) and the back antistatic layer include the same acrylic resin as in the pressure-sensitive adhesive layer.
  • examples of the energy ray curable acrylic resin in the antistatic composition (VI-1) and the back antistatic layer include the same as the adhesive resin (I-2a) in the adhesive layer.
  • the resin contained in the antistatic composition (VI-1) and the backside antistatic layer may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination and a ratio thereof are arbitrarily selected. it can.
  • the ratio of the content of the resin to the total content of all components other than the solvent may be, for example, any of 30 to 99.9% by mass, 35 to 98% by mass, 60 to 98% by mass, and 85 to 98% by mass.
  • the ratio is not less than the lower limit value, the strength of the back surface antistatic layer becomes higher.
  • the ratio is not more than the upper limit value, the content of the antistatic agent in the antistatic layer can be increased.
  • the antistatic composition (VI-1) contains the energy ray-curable resin, it may contain an energy ray-curable compound. Further, when the antistatic composition (VI-1) contains the energy ray-curable resin, it may contain a photopolymerization initiator in order to efficiently proceed the polymerization reaction of the resin.
  • the energy ray-curable compound and photopolymerization initiator contained in the antistatic composition (VI-1) include, for example, the energy ray-curable compound and the energy ray-curable compound contained in the pressure-sensitive adhesive composition (I-1), respectively. The same as the photopolymerization initiator can be used.
  • Each of the energy ray-curable compound and the photopolymerization initiator contained in the antistatic composition (VI-1) may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination thereof. And the ratio can be arbitrarily selected.
  • the content of the energy ray-curable compound and the photopolymerization initiator in the antistatic composition (VI-1) is not particularly limited, and depends on the type of the resin, the energy ray-curable compound or the photopolymerization initiator. It may be selected as appropriate.
  • the antistatic composition (VI-1) may contain other additives which do not correspond to any of the above components, as long as the effects of the present invention are not impaired.
  • the antistatic composition (VI-1) may contain a solvent for the same purpose as in the case of the pressure-sensitive adhesive composition (I-1).
  • other additives provided that the antistatic agent is contained in the above-mentioned pressure-sensitive adhesive composition (I-1) are included. And the same as the solvent.
  • examples of the other additives contained in the antistatic composition (VI-1) include emulsifiers other than the above.
  • the solvent contained in the antistatic composition (VI-1) other than the above, other alcohols such as ethanol; 2-methoxyethanol (ethylene glycol monomethyl ether), 2-ethoxyethanol (ethylene glycol) Examples also include alkoxy alcohols such as monoethyl ether) and 1-methoxy-2-propanol (propylene glycol monomethyl ether).
  • the other additives and solvent contained in the antistatic composition (VI-1) may be only one kind, or two or more kinds, and in the case of two or more kinds, their combination and ratio are arbitrary. You can choose to.
  • the contents of the other additives and the solvent of the antistatic composition (VI-1) are not particularly limited, and may be appropriately selected according to their types.
  • the antistatic composition (VI-1) contains the above-mentioned antistatic agent and, if necessary, each component such as a component other than the above antistatic agent for constituting the antistatic composition (VI-1). It can be obtained.
  • the antistatic composition (VI-1) can be produced by the same method as in the case of the pressure-sensitive adhesive composition described above, except that the compounding components are different.
  • the antistatic substrate is in the form of a sheet or a film, has antistatic properties, and also has the same function as that of the substrate.
  • the antistatic substrate In the composite sheet for forming a protective film, the antistatic substrate has the same function as a laminate of the above-described substrate and the back surface antistatic layer, and can be arranged in place of this laminate.
  • the antistatic substrate contains an antistatic agent and a resin, and may be the same as the above-mentioned substrate except that it further contains an antistatic agent.
  • the antistatic substrate may be composed of one layer (single layer) or may be composed of two or more layers. When composed of a plurality of layers, the plurality of layers are the same as each other. However, they may be different, and the combination of these plural layers is not particularly limited.
  • the thickness of the antistatic substrate may be similar to that of the substrate described above, for example.
  • the thickness of the antistatic substrate is in such a range, the flexibility of the composite sheet for forming a protective film and the adhesiveness to a semiconductor wafer or a semiconductor chip are further improved.
  • the "thickness of the antistatic substrate” means the total thickness of the antistatic substrate, and for example, the thickness of the antistatic substrate composed of a plurality of layers means the antistatic substrate. Means the total thickness of all the layers that make up.
  • the antistatic substrate may be transparent or opaque, and may be colored depending on the purpose.
  • the backside antistatic layer is preferably one that transmits energy rays.
  • the antistatic substrate is preferably transparent.
  • the antistatic substrate has a roughening treatment by sandblasting, solvent treatment or the like in order to improve the adhesiveness with a layer provided thereon (for example, a pressure-sensitive adhesive layer, an intermediate layer or a protective film forming film);
  • the surface may be subjected to corona discharge treatment, electron beam irradiation treatment, plasma treatment, ozone/ultraviolet ray irradiation treatment, flame treatment, chromic acid treatment, oxidation treatment such as hot air treatment; and the like.
  • the surface of the antistatic substrate may be treated with a primer.
  • the antistatic substrate can be produced, for example, by molding the antistatic composition (VI-2) containing the antistatic agent and the resin.
  • the content ratio of the components that do not vaporize at room temperature is usually the same as the content ratio of the components in the antistatic substrate.
  • Molding of the antistatic composition (VI-2) may be carried out by a known method, and for example, it may be carried out by the same method as molding the resin composition at the time of producing the base material.
  • the antistatic agent contained in the antistatic composition (VI-2) may be the same as the antistatic agent contained in the backside antistatic layer.
  • the antistatic agent contained in the antistatic composition (VI-2) may be only one kind, or two or more kinds, and in the case of two or more kinds, their combination and ratio can be arbitrarily selected.
  • the ratio of the content of the antistatic agent to the total content of the antistatic agent and the resin is 7.5% by mass or more. It is more preferably 8.5 mass% or more.
  • the ratio is equal to or more than the lower limit value, the effect of suppressing peeling charge of the protective film-forming composite sheet becomes high, and as a result, the effect of suppressing foreign matter mixing between the protective film forming film and the semiconductor wafer is high. Become.
  • the upper limit of the ratio of the content of the antistatic agent to the total content of the antistatic agent and the resin is not particularly limited.
  • the ratio is preferably 20% by mass or less.
  • the proportion of the content of the antistatic agent can be appropriately adjusted within a range set by arbitrarily combining the above-mentioned preferred lower limit value and upper limit value.
  • the ratio is preferably 7.5 to 20% by mass, and more preferably 8.5 to 20% by mass.
  • these are examples of the above ratio.
  • Examples of the resin contained in the antistatic composition (VI-2) and the antistatic substrate include the same resins as those contained in the substrate.
  • the resin contained in the antistatic composition (VI-2) and the antistatic substrate may be only one kind, or two or more kinds, and in the case of two or more kinds, the combination and the ratio thereof are arbitrary. You can choose.
  • the ratio of the content of the resin to the total content of all components other than the solvent is preferably 30 to 99.9% by mass, more preferably 35 to 98% by mass, further preferably 60 to 98% by mass, and 85 to 98% by mass. % Is particularly preferable.
  • the ratio is equal to or more than the lower limit value, the strength of the antistatic base material becomes higher.
  • the ratio is not more than the upper limit value, it becomes possible to increase the content of the antistatic agent in the antistatic substrate.
  • the antistatic composition (VI-2) contains the energy ray-curable resin, it may contain a photopolymerization initiator in order to efficiently proceed the polymerization reaction of the resin.
  • the photopolymerization initiator contained in the antistatic composition (VI-2) include the same photopolymerization initiators contained in the pressure-sensitive adhesive composition (I-1).
  • the photopolymerization initiator contained in the antistatic composition (VI-2) may be only one type, or may be two or more types, and in the case of two or more types, their combination and ratio can be arbitrarily selected.
  • the content of the photopolymerization initiator in the antistatic composition (VI-2) is not particularly limited and may be appropriately selected depending on the type of the resin or the photopolymerization initiator.
  • the antistatic composition (VI-2) is a filler, a colorant, an antioxidant, an organic lubricant, a catalyst, a softening agent which does not correspond to any of these other than the above-mentioned antistatic agent, resin and photopolymerization initiator. It may contain various known additives such as (plasticizer).
  • the additives contained in the antistatic composition (VI-2) are the same as the other additives contained in the pressure-sensitive adhesive composition (I-1) (excluding the antistatic agent). Can be mentioned.
  • the antistatic composition (VI-2) may contain a solvent in order to improve its fluidity.
  • the solvent contained in the antistatic composition (VI-2) may be the same as the solvent contained in the pressure-sensitive adhesive composition (I-1).
  • the antistatic agent and the resin contained in the antistatic composition (VI-2) may each be only one kind, or two or more kinds, and in the case of two or more kinds, the combination and the ratio thereof are arbitrary. You can choose.
  • the contents of the additive and the solvent in the antistatic composition (VI-2) are not particularly limited, and may be appropriately selected according to their types.
  • the antistatic composition (VI-2) contains the above-mentioned antistatic agent, the above resin and, if necessary, other components such as other components for constituting the antistatic composition (VI-2). It is obtained by doing.
  • the antistatic composition (VI-2) can be produced by the same method as in the case of the above-mentioned pressure-sensitive adhesive composition except that the compounding components are different.
  • the surface antistatic layer is different from the back surface antistatic layer in the arrangement position in the protective film forming composite sheet, but the configuration itself is the same as the back surface antistatic layer.
  • the surface antistatic layer can be formed using the antistatic composition (VI-1) by the same method as the method for forming the backside antistatic layer described above. Therefore, detailed description of the surface antistatic layer is omitted.
  • the composite sheet for forming a protective film includes both the surface antistatic layer and the backside antistatic layer, the surface antistatic layer and the backside antistatic layer may be the same or different from each other.
  • the intermediate layer has a sheet shape or a film shape.
  • a preferable intermediate layer includes a peelability improving layer having one surface subjected to a peeling treatment.
  • the peelability improving layer include a plurality of layers including a resin layer and a peeling treatment layer formed on the resin layer.
  • the peelability improving layer is arranged with the release treatment layer facing the protective film forming film side.
  • the resin layer can be produced by molding a resin composition containing a resin. Then, the peelability improving layer can be manufactured by subjecting one surface of the resin layer to a peeling treatment.
  • the peeling treatment of the resin layer can be performed with various known peeling agents such as alkyd-based, silicone-based, fluorine-based, unsaturated polyester-based, polyolefin-based or wax-based release agents.
  • the release agent is preferably an alkyd-based, silicone-based or fluorine-based release agent.
  • the resin that is a constituent material of the resin layer may be appropriately selected according to the purpose and is not particularly limited.
  • Preferred examples of the resin include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polybutylene terephthalate (PBT), polyethylene (PE), polypropylene (PP) and the like.
  • the intermediate layer may be composed of one layer (single layer) or may be composed of two or more layers, regardless of whether or not it is a peelability improving layer.
  • these layers may be the same or different from each other, and the combination of these layers is not particularly limited.
  • both the resin layer and the peeling treatment layer may be composed of one layer (single layer) or two or more layers. It may be composed of a plurality of layers.
  • the thickness of the intermediate layer may be appropriately adjusted according to its type and is not particularly limited.
  • the thickness of the peelability improving layer (the total thickness of the resin layer and the peeling treatment layer) is preferably 10 to 2000 nm, more preferably 25 to 1500 nm, and further preferably 50 to 1200 nm. Particularly preferred.
  • the thickness of the peelability improving layer is equal to or more than the lower limit value, the action of the peelability improving layer becomes more remarkable, and the effect of suppressing breakage such as cutting of the peelability improving layer becomes higher.
  • the thickness of the peelability improving layer is less than or equal to the upper limit value, when picking up a semiconductor chip with a protective film or a semiconductor chip with a film for forming a protective film, which will be described later, the force for pushing up these chips is easily transmitted to these chips. Therefore, the pickup can be performed more easily.
  • the intermediate layer may be transparent or opaque, and may be colored depending on the purpose.
  • the intermediate layer preferably transmits energy rays.
  • the intermediate layer is preferably transparent.
  • the protective film forming film becomes a protective film by curing.
  • This protective film is for protecting the back surface of the semiconductor wafer or the semiconductor chip (in other words, the surface opposite to the electrode formation surface).
  • the protective film-forming film is soft and can be easily attached to an object to be attached.
  • the "film for forming a protective film” means a film before being cured
  • the "protective film” means a film obtained by curing the film for forming a protective film.
  • the laminated structure of the cured product of the support sheet and the protective film forming film is maintained even after the protective film forming film is cured. As long as this laminated structure is referred to as a "composite sheet for forming a protective film”.
  • the protective film forming film may be, for example, either thermosetting or energy ray curable, or may have both thermosetting and energy ray curable properties, and It does not need to have both properties of curability and energy ray curability.
  • the protective film-forming film does not have curability, the protective film-forming film is formed at the stage when the protective film-forming film is attached to the semiconductor wafer by the protective film-forming film as described below. It is considered that the formation of the protective film from is completed.
  • the protective film-forming film is composed of one layer (single layer) regardless of whether it is curable or not, and when it is curable, whether it is thermosetting or energy ray curable. It may be present or may be composed of two or more layers. When the protective film-forming film is composed of a plurality of layers, the plurality of layers may be the same or different from each other, and the combination of the plurality of layers is not particularly limited.
  • the thickness of the protective film forming film is the presence or absence of curability of the protective film forming film, and, if it is curable, whether the protective film forming film is thermosetting or energy ray curable. Regardless of the above, it is preferably 1 to 100 ⁇ m, more preferably 3 to 80 ⁇ m, and particularly preferably 5 to 60 ⁇ m. When the thickness of the protective film forming film is not less than the lower limit value, a protective film having a higher protective ability can be formed. Further, when the thickness of the protective film forming film is equal to or less than the upper limit value, it is possible to avoid an excessive thickness.
  • the "thickness of the protective film forming film” means the total thickness of the protective film forming film, for example, the thickness of the protective film forming film composed of a plurality of layers, the protective film forming film. Means the total thickness of all the layers that make up.
  • the protective film-forming film can be formed by using the protective film-forming composition containing the constituent material.
  • the film for forming a protective film can be formed by applying the composition for forming a protective film to the surface on which the film is to be formed and then drying it as necessary.
  • the content ratio of the components that do not vaporize at room temperature in the protective film-forming composition is usually the same as the content ratio of the components in the protective film-forming film.
  • the thermosetting protective film-forming film can be formed using the thermosetting protective film-forming composition, and the energy ray-curable protective film forming film can be formed using the energy-ray-curable protective film forming composition. it can.
  • the thermal curing of the protective film-forming film contributes to the formation of the protective film. If the contribution of energy ray curing is larger than the above, the protective film-forming film is treated as a thermosetting film. On the contrary, when the contribution of the energy ray curing of the protective film forming film to the formation of the protective film is larger than the thermal curing contribution, the protective film forming film is treated as the energy ray curing film.
  • the coating of the composition for forming a protective film can be performed, for example, by the same method as in the case of coating the above-mentioned pressure-sensitive adhesive composition.
  • the protective film-forming composition is dried under the presence or absence of curability of the protective film-forming film, and when it is curable, the protective film-forming film is either thermosetting or energy ray curable. It is not particularly limited, regardless of the above. However, when the composition for forming a protective film contains the solvent described below, it is preferable to heat-dry. Then, the composition for forming a protective film containing a solvent is preferably dried by heating, for example, at 70 to 130° C. for 10 seconds to 5 minutes. However, the composition for forming a thermosetting protective film is preferably dried by heating so that the composition itself and the film for forming a thermosetting protective film formed from this composition are not thermally cured.
  • thermosetting protective film forming film and the energy ray curable protective film forming film will be sequentially described below.
  • thermosetting protective film forming film is attached to the back surface of a semiconductor wafer and heat-cured to form a protective film.
  • the heating temperature during thermosetting of the thermosetting protective film-forming film is preferably 100 to 200° C., more preferably 110 to 180° C., and particularly preferably 120 to 170° C. ..
  • the heating time during the heat curing is preferably 0.5 to 5 hours, more preferably 0.5 to 3 hours, and particularly preferably 1 to 2 hours.
  • thermosetting protective film forming film examples include those containing a polymer component (A) and a thermosetting component (B).
  • the polymer component (A) is a component that can be regarded as formed by a polymerization reaction of a polymerizable compound.
  • the thermosetting component (B) is a component that can undergo a curing (polymerization) reaction by using heat as a trigger for the reaction.
  • the polymerization reaction also includes a polycondensation reaction.
  • thermosetting protective film forming composition (III-1) A preferable thermosetting protective film-forming composition is, for example, a thermosetting protective film-forming composition (III-1) containing the polymer component (A) and the thermosetting component (B) (the present specification). In the text, it may be simply abbreviated as “composition (III-1)”) and the like.
  • the polymer component (A) is a component for imparting film-forming properties and flexibility to the thermosetting protective film-forming film.
  • the polymer component (A) contained in the composition (III-1) and the thermosetting protective film-forming film may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination thereof. And the ratio can be arbitrarily selected.
  • polymer component (A) examples include acrylic resin, polyester, urethane resin, acrylic urethane resin, silicone resin, rubber resin, phenoxy resin, and thermosetting polyimide, and acrylic resin is preferable. ..
  • the acrylic resin in the polymer component (A) examples include known acrylic polymers.
  • the weight average molecular weight (Mw) of the acrylic resin is preferably 10,000 to 2,000,000, and more preferably 100,000 to 15,000,000.
  • the shape stability (temporal stability during storage) of the thermosetting protective film-forming film is improved.
  • the weight average molecular weight of the acrylic resin is not more than the upper limit value, the thermosetting protective film forming film easily follows the uneven surface of the adherend, and the adherend and the thermosetting protective film are formed. Generation of voids and the like between the film and the film for use is further suppressed.
  • a "weight average molecular weight” is a polystyrene conversion value measured by a gel permeation chromatography (GPC) method, unless otherwise specified.
  • the glass transition temperature (Tg) of the acrylic resin is preferably ⁇ 60 to 70° C., more preferably ⁇ 30 to 50° C.
  • Tg of the acrylic resin is at least the above lower limit, for example, the adhesive force between the cured product of the protective film forming film and the support sheet is suppressed, and the releasability of the support sheet is appropriately improved. Further, when the Tg of the acrylic resin is not more than the upper limit value, the adhesive force between the thermosetting protective film forming film and the adherend of the cured product thereof is improved.
  • the acrylic resin is selected from, for example, one or more polymers of (meth)acrylic acid ester; (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene and N-methylolacrylamide. Examples thereof include copolymers of two or more kinds of monomers.
  • (meth)acrylic acid is a concept that includes both “acrylic acid” and “methacrylic acid”.
  • (meth)acryloyl group is a concept that includes both “acryloyl group” and “methacryloyl group”
  • (meth)acrylate” "" is a concept including both “acrylate” and "methacrylate”.
  • Examples of the (meth)acrylic acid ester that constitutes the acrylic resin include, for example, methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, and (meth)acrylate.
  • N-Butyl acrylate isobutyl (meth)acrylate, sec-butyl (meth)acrylate, tert-butyl (meth)acrylate, pentyl (meth)acrylate, hexyl (meth)acrylate, (meth)acrylic Heptyl acid, 2-ethylhexyl (meth)acrylate, isooctyl (meth)acrylate, n-octyl (meth)acrylate, n-nonyl (meth)acrylate, isononyl (meth)acrylate, decyl (meth)acrylate Undecyl (meth)acrylate, dodecyl (meth)acrylate (lauryl (meth)acrylate), tridecyl (meth)acrylate, tetradecyl (meth)acrylate myristyl (meth)acrylate, (meth)acrylic acid
  • alkyl groups constituting the alkyl este
  • the acrylic resin is, for example, one or more monomers selected from (meth)acrylic acid, itaconic acid, vinyl acetate, acrylonitrile, styrene, N-methylolacrylamide, etc., in addition to the (meth)acrylic acid ester. May be obtained by copolymerization.
  • the monomer that constitutes the acrylic resin may be only one kind, or two or more kinds, and when there are two or more kinds, the combination and the ratio thereof can be arbitrarily selected.
  • the acrylic resin may have a functional group capable of binding to other compounds such as a vinyl group, a (meth)acryloyl group, an amino group, a hydroxyl group, a carboxy group, and an isocyanate group.
  • the functional group of the acrylic resin may be bonded to another compound via a crosslinking agent (F) described below, or may be directly bonded to another compound without the crosslinking agent (F). ..
  • F crosslinking agent
  • thermoplastic resin other than an acrylic resin
  • thermoplastic resin is used alone without using an acrylic resin.
  • thermosetting protective film-forming film easily follows the uneven surface of the adherend, and the adherend and thermosetting Occurrence of voids and the like between the film and the film for forming a protective film may be further suppressed.
  • the weight average molecular weight of the thermoplastic resin is preferably 1,000 to 100,000, more preferably 3,000 to 80,000.
  • the glass transition temperature (Tg) of the thermoplastic resin is preferably ⁇ 30 to 150° C., more preferably ⁇ 20 to 120° C.
  • thermoplastic resin examples include polyester, polyurethane, phenoxy resin, polybutene, polybutadiene, polystyrene and the like.
  • thermoplastic resin contained in the composition (III-1) and the thermosetting protective film-forming film may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination and a ratio thereof. Can be arbitrarily selected.
  • the ratio of the content of the polymer component (A) to the total content of all components other than the solvent ie, the thermosetting protective film forming film in the thermosetting protective film forming film.
  • the ratio of the content of the polymer component (A) to the total mass of the film for use is preferably 5 to 85% by mass, regardless of the type of the polymer component (A), and 5 to 80% by mass. More preferably, it may be any of 5 to 65% by mass, 5 to 50% by mass, and 5 to 35% by mass.
  • the polymer component (A) may also correspond to the thermosetting component (B).
  • the composition (III-1) contains components corresponding to both the polymer component (A) and the thermosetting component (B)
  • the composition (III-1) is , The polymer component (A) and the thermosetting component (B).
  • thermosetting component (B) is a component for curing the thermosetting protective film forming film.
  • the thermosetting component (B) contained in the composition (III-1) and the film for forming a thermosetting protective film may be only one kind, or two or more kinds. The combination and the ratio can be arbitrarily selected.
  • thermosetting component (B) examples include epoxy thermosetting resins, thermosetting polyimides, polyurethanes, unsaturated polyesters, silicone resins and the like, with epoxy thermosetting resins being preferred.
  • the epoxy thermosetting resin includes an epoxy resin (B1) and a thermosetting agent (B2).
  • the epoxy thermosetting resin contained in the composition (III-1) and the thermosetting protective film-forming film may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination thereof. And the ratio can be arbitrarily selected.
  • ⁇ Epoxy resin (B1) examples include known ones, for example, polyfunctional epoxy resin, biphenyl compound, bisphenol A diglycidyl ether and hydrogenated product thereof, orthocresol novolac epoxy resin, dicyclopentadiene type epoxy resin, Bifunctional or higher functional epoxy compounds such as biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin and phenylene skeleton type epoxy resin can be mentioned.
  • An epoxy resin having an unsaturated hydrocarbon group may be used as the epoxy resin (B1).
  • An epoxy resin having an unsaturated hydrocarbon group has higher compatibility with an acrylic resin than an epoxy resin having no unsaturated hydrocarbon group. Therefore, by using the epoxy resin having an unsaturated hydrocarbon group, the reliability of the semiconductor chip with a resin film obtained by using the composite sheet for forming a protective film is improved.
  • Examples of the epoxy resin having an unsaturated hydrocarbon group include a compound obtained by converting a part of the epoxy groups of a polyfunctional epoxy resin into a group having an unsaturated hydrocarbon group. Such a compound can be obtained, for example, by subjecting an epoxy group to an addition reaction with (meth)acrylic acid or a derivative thereof.
  • Examples of the epoxy resin having an unsaturated hydrocarbon group include, for example, compounds in which a group having an unsaturated hydrocarbon group is directly bonded to an aromatic ring or the like constituting the epoxy resin.
  • the unsaturated hydrocarbon group is a polymerizable unsaturated group, and specific examples thereof include ethenyl group (vinyl group), 2-propenyl group (allyl group), (meth)acryloyl group, (meth) Examples thereof include an acrylamide group, and an acryloyl group is preferable.
  • the number average molecular weight of the epoxy resin (B1) is not particularly limited, but from the viewpoint of the curability of the thermosetting protective film forming film and the strength and heat resistance of the resin film after curing, it is preferably 300 to 30,000. The range of 300 to 10,000 is more preferable, and the range of 300 to 3000 is particularly preferable.
  • the epoxy equivalent of the epoxy resin (B1) is preferably 100 to 1000 g/eq, and more preferably 150 to 950 g/eq.
  • the epoxy resin (B1) may be used alone or in combination of two or more, and when two or more are used in combination, the combination and ratio thereof can be arbitrarily selected.
  • thermosetting agent (B2) functions as a curing agent for the epoxy resin (B1).
  • thermosetting agent (B2) include compounds having two or more functional groups capable of reacting with an epoxy group in one molecule.
  • the functional group include a phenolic hydroxyl group, an alcoholic hydroxyl group, an amino group, a carboxy group, a group in which an acid group is dehydrated, and the like, and the phenolic hydroxyl group, an amino group, or an acid group is dehydrated. It is preferably a group, and more preferably a phenolic hydroxyl group or an amino group.
  • thermosetting agents (B2) examples of the phenol-based curing agent having a phenolic hydroxyl group include polyfunctional phenol resins, biphenols, novolac type phenol resins, dicyclopentadiene type phenol resins, aralkyl type phenol resins, and the like. ..
  • examples of the amine curing agent having an amino group include dicyandiamide.
  • the thermosetting agent (B2) may have an unsaturated hydrocarbon group.
  • the thermosetting agent (B2) having an unsaturated hydrocarbon group for example, a compound obtained by substituting a part of a hydroxyl group of a phenol resin with a group having an unsaturated hydrocarbon group, an aromatic ring of the phenol resin, Examples thereof include compounds in which a group having a saturated hydrocarbon group is directly bonded.
  • the unsaturated hydrocarbon group in the thermosetting agent (B2) is the same as the unsaturated hydrocarbon group in the epoxy resin having an unsaturated hydrocarbon group described above.
  • thermosetting agent (B2) When a phenolic curing agent is used as the thermosetting agent (B2), the thermosetting agent (B2) having a high softening point or glass transition temperature is preferable because the peelability of the protective film from the support sheet is improved. preferable.
  • the number average molecular weight of the resin component such as a polyfunctional phenol resin, a novolac type phenol resin, a dicyclopentadiene type phenol resin, an aralkyl type phenol resin is preferably 300 to 30,000. , 400 to 10000 is more preferable, and 500 to 3000 is particularly preferable.
  • the molecular weight of the non-resin component such as biphenol or dicyandiamide in the thermosetting agent (B2) is not particularly limited, but is preferably 60 to 500, for example.
  • thermosetting agent (B2) one type may be used alone, two or more types may be used in combination, and when two or more types are used in combination, their combination and ratio can be arbitrarily selected.
  • the content of the thermosetting agent (B2) is 0.1 to 500 parts by mass with respect to 100 parts by mass of the epoxy resin (B1). It is preferably 1 part to 200 parts by mass, more preferably 1 to 200 parts by mass, 1 to 50 parts by mass, 1 to 25 parts by mass, and 1 to 10 parts by mass. May be.
  • the content of the thermosetting agent (B2) is at least the lower limit value, the curing of the thermosetting protective film-forming film will proceed more easily.
  • the content of the thermosetting agent (B2) is equal to or less than the upper limit value, the moisture absorption rate of the thermosetting protective film-forming film is reduced, and the package obtained using the protective film-forming composite sheet is reduced. Reliability is improved.
  • the content of the thermosetting component (B) (for example, the total content of the epoxy resin (B1) and the thermosetting agent (B2)) is
  • the content of the polymer component (A) is preferably 20 to 500 parts by mass, more preferably 25 to 300 parts by mass, further preferably 30 to 150 parts by mass, relative to 100 parts by mass. For example, it may be any one of 35 to 100 parts by mass and 40 to 80 parts by mass.
  • the content of the thermosetting component (B) is in such a range, for example, the adhesive force between the cured product of the protective film forming film and the support sheet is suppressed, and the peelability of the support sheet is improved. To do.
  • the composition (III-1) and the thermosetting protective film-forming film may contain a curing accelerator (C).
  • the curing accelerator (C) is a component for adjusting the curing rate of the composition (III-1).
  • Preferred curing accelerators (C) include, for example, tertiary amines such as triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris(dimethylaminomethyl)phenol; 2-methylimidazole, 2-phenylimidazole. , 2-phenyl-4-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, etc.
  • Imidazole substituted with a group organic phosphines such as tributylphosphine, diphenylphosphine, and triphenylphosphine (phosphines in which one or more hydrogen atoms are substituted with organic groups); tetraphenylphosphonium tetraphenylborate, triphenylphosphine Examples thereof include tetraphenylboron salts such as tetraphenylborate.
  • the curing accelerator (C) contained in the composition (III-1) and the thermosetting protective film-forming film may be only one kind, or may be two or more kinds, and in the case of two or more kinds, a combination thereof. And the ratio can be arbitrarily selected.
  • the content of the curing accelerator (C) in the composition (III-1) and the thermosetting protective film-forming film is 100% by weight of the thermosetting component (B). It is preferably 0.01 to 10 parts by mass, more preferably 0.1 to 7 parts by mass, relative to parts by mass.
  • the content of the curing accelerator (C) is at least the lower limit value, the effect of using the curing accelerator (C) can be obtained more significantly.
  • the content of the curing accelerator (C) is less than or equal to the upper limit value, for example, the highly polar curing accelerator (C) may be contained in the thermosetting protective film-forming film under high temperature and high humidity conditions. The effect of suppressing the segregation by moving to the adhesion interface side with the adherent is enhanced. As a result, the reliability of the semiconductor chip with a protective film obtained by using the composite sheet for forming a protective film is further improved.
  • the composition (III-1) and the thermosetting protective film-forming film may contain a filler (D).
  • the thermosetting protective film-forming film contains the filler (D)
  • the thermal expansion coefficient of the protective film obtained by curing the thermosetting protective film-forming film is easily adjusted.
  • the reliability of the semiconductor chip with the protective film obtained by using the composite sheet for forming the protective film is further improved.
  • the thermosetting protective film forming film contains the filler (D)
  • the hygroscopic rate of the protective film can be reduced and the heat dissipation can be improved.
  • the filler (D) may be either an organic filler or an inorganic filler, but is preferably an inorganic filler.
  • Preferable inorganic fillers include, for example, powders of silica, alumina, talc, calcium carbonate, titanium white, red iron oxide, silicon carbide, boron nitride, etc.; spheres of these inorganic fillers; surface modification of these inorganic fillers. Products; single crystal fibers of these inorganic fillers; glass fibers and the like.
  • the inorganic filler is preferably silica or alumina, and more preferably silica.
  • the filler (D) contained in the composition (III-1) and the thermosetting protective film-forming film may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination thereof and The ratio can be arbitrarily selected.
  • the ratio of the content of the filler (D) to the total content of all components other than the solvent that is, the thermosetting protective film forming film in the thermosetting protective film forming film.
  • the ratio of the content of the filler (D) to the total mass of the film for use is preferably 5 to 80% by mass, more preferably 10 to 70% by mass, and for example, 20 to 65% by mass. , 30 to 65% by mass, and 40 to 65% by mass. When the ratio is within such a range, it becomes easier to adjust the thermal expansion coefficient of the protective film.
  • the composition (III-1) and the thermosetting protective film-forming film may contain a coupling agent (E).
  • a coupling agent (E) having a functional group capable of reacting with an inorganic compound or an organic compound it is possible to improve the adhesiveness and adhesion of the thermosetting protective film-forming film to an adherend. it can. Further, by using the coupling agent (E), the cured product of the thermosetting protective film-forming film has improved water resistance without impairing heat resistance.
  • the coupling agent (E) is preferably a compound having a functional group capable of reacting with the functional group of the polymer component (A), thermosetting component (B), etc., and is preferably a silane coupling agent. More preferable.
  • Preferred examples of the silane coupling agent include 3-glycidyloxypropyltrimethoxysilane, 3-glycidyloxypropylmethyldiethoxysilane, 3-glycidyloxypropyltriethoxysilane, 3-glycidyloxymethyldiethoxysilane, and 2-glycidyloxymethyldiethoxysilane.
  • the coupling agent (E) contained in the composition (III-1) and the thermosetting protective film-forming film may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination thereof. And the ratio can be arbitrarily selected.
  • the content of the coupling agent (E) in the composition (III-1) and the thermosetting protective film-forming film is the polymer component (A) and the thermosetting component. It is preferably 0.03 to 20 parts by mass, more preferably 0.05 to 10 parts by mass, and 0.1 to 5 parts by mass based on 100 parts by mass of the total content of (B). Is particularly preferable.
  • the content of the coupling agent (E) is at least the lower limit value, the dispersibility of the filler (D) in the resin is improved, and the thermosetting protective film forming film is adhered to the adherend.
  • the effect of using the coupling agent (E), such as improved properties, can be more remarkably obtained.
  • the content of the coupling agent (E) is not more than the upper limit value, the generation of outgas is further suppressed.
  • Cross-linking agent (F) As the polymer component (A), those having a functional group such as a vinyl group, a (meth)acryloyl group, an amino group, a hydroxyl group, a carboxy group or an isocyanate group, which can be bonded to other compounds, such as the above-mentioned acrylic resin.
  • the composition (III-1) and the thermosetting protective film-forming film may contain a crosslinking agent (F).
  • the cross-linking agent (F) is a component for bonding the functional group in the polymer component (A) to another compound for cross-linking. By thus cross-linking, the thermosetting protective film-forming film is formed. The initial adhesive strength and cohesive strength of can be adjusted.
  • cross-linking agent (F) for example, an organic polyvalent isocyanate compound, an organic polyvalent imine compound, a metal chelate-based cross-linking agent (cross-linking agent having a metal chelate structure), an aziridine-based cross-linking agent (cross-linking agent having an aziridinyl group), etc. Is mentioned.
  • organic polyvalent isocyanate compound for example, an aromatic polyvalent isocyanate compound, an aliphatic polyvalent isocyanate compound and an alicyclic polyvalent isocyanate compound (hereinafter, these compounds are collectively referred to as "aromatic polyvalent isocyanate compound etc.” Abbreviated); trimers such as the aromatic polyvalent isocyanate compounds, isocyanurates and adducts; terminal isocyanate urethane prepolymers obtained by reacting the aromatic polyvalent isocyanate compounds and the like with polyol compounds Etc.
  • the "adduct” is an aromatic polyvalent isocyanate compound, an aliphatic polyvalent isocyanate compound or an alicyclic polyvalent isocyanate compound, and ethylene glycol, propylene glycol, neopentyl glycol, trimethylolpropane or castor oil or the like. It means a reaction product of a compound containing a molecular active hydrogen. Examples of the adduct include a trimethylolpropane xylylene diisocyanate adduct as described below.
  • the term “terminal isocyanate urethane prepolymer” means a prepolymer having a urethane bond and an isocyanate group at the terminal portion of the molecule.
  • organic polyvalent isocyanate compound examples include, for example, 2,4-tolylene diisocyanate; 2,6-tolylene diisocyanate; 1,3-xylylene diisocyanate; 1,4-xylene diisocyanate; diphenylmethane-4.
  • organic polyvalent imine compound examples include N,N′-diphenylmethane-4,4′-bis(1-aziridinecarboxamide), trimethylolpropane-tri- ⁇ -aziridinylpropionate, and tetramethylolmethane.
  • -Tri- ⁇ -aziridinyl propionate, N,N′-toluene-2,4-bis(1-aziridinecarboxamide)triethylenemelamine and the like can be mentioned.
  • crosslinking agent (F) When an organic polyisocyanate compound is used as the crosslinking agent (F), it is preferable to use a hydroxyl group-containing polymer as the polymer component (A).
  • a reaction between the cross-linking agent (F) and the polymer component (A) gives a thermosetting protective film-forming film. A crosslinked structure can be easily introduced.
  • the cross-linking agent (F) contained in the composition (III-1) and the thermosetting protective film-forming film may be only one kind, or may be two or more kinds, and in the case of two or more kinds, a combination thereof and The ratio can be arbitrarily selected.
  • the content of the crosslinking agent (F) is 0.01 to 20 parts by mass with respect to 100 parts by mass of the content of the polymer component (A).
  • the amount is preferably 0.1 part by mass, more preferably 0.1-10 parts by mass, particularly preferably 0.5-5 parts by mass.
  • the content of the cross-linking agent (F) is at least the lower limit value, the effect of using the cross-linking agent (F) can be more remarkably obtained. Further, when the content of the crosslinking agent (F) is not more than the upper limit value, excessive use of the crosslinking agent (F) is suppressed.
  • thermosetting protective film-forming film may contain an energy ray-curable resin (G). Since the thermosetting protective film-forming film contains the energy ray-curable resin (G), its characteristics can be changed by irradiation with energy rays.
  • the energy ray-curable resin (G) is obtained by polymerizing (curing) an energy ray-curable compound.
  • the energy ray-curable compound include compounds having at least one polymerizable double bond in the molecule, and acrylate compounds having a (meth)acryloyl group are preferable.
  • acrylate-based compound examples include trimethylolpropane tri(meth)acrylate, tetramethylolmethane tetra(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxypenta( (Meth)acrylate, dipentaerythritol hexa(meth)acrylate, 1,4-butylene glycol di(meth)acrylate, 1,6-hexanediol di(meth)acrylate and the like (meth)acrylate containing a chain aliphatic skeleton; Cycloaliphatic skeleton-containing (meth)acrylate such as cyclopentanyl di(meth)acrylate; polyalkylene glycol (meth)acrylate such as polyethylene glycol di(meth)acrylate; oligoester (meth)acrylate; urethane
  • the weight average molecular weight of the energy ray-curable compound is preferably 100 to 30,000, and more preferably 300 to 10,000.
  • the energy ray-curable compound used for the polymerization may be only one kind, or two or more kinds, and in the case of two or more kinds, the combination and the ratio thereof can be arbitrarily selected.
  • the energy ray-curable resin (G) contained in the composition (III-1) and the thermosetting protective film-forming film may be only one kind, two or more kinds, or two or more kinds. The combination and ratio of can be arbitrarily selected.
  • the ratio of the content of the energy ray-curable resin (G) to the total mass of the composition (III-1) is 1 to. It is preferably 95% by mass, more preferably 5 to 90% by mass, and particularly preferably 10 to 85% by mass.
  • Examples of the photopolymerization initiator (H) in the composition (III-1) include benzoin, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, benzoin isobutyl ether, benzoin benzoic acid, methyl benzoin benzoate, and benzoin dimethyl ketal.
  • Benzoin compounds such as; acetophenone compounds such as acetophenone, 2-hydroxy-2-methyl-1-phenyl-propan-1-one, 2,2-dimethoxy-1,2-diphenylethan-1-one; bis(2, Acylphosphine oxide compounds such as 4,6-trimethylbenzoyl)phenylphosphine oxide and 2,4,6-trimethylbenzoyldiphenylphosphine oxide; sulfide compounds such as benzylphenyl sulfide and tetramethylthiuram monosulfide; 1-hydroxycyclohexyl ⁇ -ketol compounds such as phenyl ketone; azo compounds such as azobisisobutyronitrile; titanocene compounds such as titanocene; thioxanthone compounds such as thioxanthone; peroxide compounds; diketone compounds such as diacetyl; benzyl; dibenzyl; benzophenone; 4-dieth
  • the photopolymerization initiator (H) contained in the composition (III-1) and the thermosetting protective film-forming film may be only one kind, or two or more kinds, and when two or more kinds are contained, The combination and the ratio can be arbitrarily selected.
  • the content of the photopolymerization initiator (H) in the composition (III-1) is 100 parts by mass of the content of the energy ray-curable resin (G).
  • the amount is preferably 0.1 to 20 parts by mass, more preferably 1 to 10 parts by mass, and particularly preferably 2 to 5 parts by mass.
  • the composition (III-1) and the thermosetting protective film-forming film may contain a colorant (I).
  • a colorant (I) include known pigments such as inorganic pigments, organic pigments and organic dyes.
  • organic pigments and organic dyes examples include aminium dyes, cyanine dyes, merocyanine dyes, croconium dyes, squarylium dyes, azulenium dyes, polymethine dyes, naphthoquinone dyes, pyrylium dyes, phthalocyanines.
  • Dye naphthalocyanine dye, naphtholactam dye, azo dye, condensed azo dye, indigo dye, perinone dye, perylene dye, dioxazine dye, quinacridone dye, isoindolinone dye, quinophthalone dye , Pyrrole dyes, thioindigo dyes, metal complex dyes (metal complex salt dyes), dithiol metal complex dyes, indolephenol dyes, triallylmethane dyes, anthraquinone dyes, dioxazine dyes, naphthol dyes, azomethine dyes Examples thereof include dyes, benzimidazolone dyes, pyranthrone dyes and slene dyes.
  • inorganic pigments examples include carbon black, cobalt pigments, iron pigments, chromium pigments, titanium pigments, vanadium pigments, zirconium pigments, molybdenum pigments, ruthenium pigments, platinum pigments, ITO ( Examples thereof include indium tin oxide) type dyes and ATO (antimony tin oxide) type dyes.
  • the colorant (I) contained in the composition (III-1) and the thermosetting protective film-forming film may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination thereof and The ratio can be arbitrarily selected.
  • the content of the colorant (I) in the thermosetting protective film forming film may be appropriately adjusted according to the purpose. For example, when the content of the colorant (I) in the thermosetting protective film forming film is adjusted and the light transmittance of the protective film is adjusted, the print visibility when laser printing is performed on the protective film. Can be adjusted. Further, by adjusting the content of the colorant (I) in the thermosetting protective film forming film, it is possible to improve the designability of the protective film and make it difficult to see the grinding marks on the back surface of the semiconductor wafer.
  • the ratio of the content of the colorant (I) to the total mass of the thermosetting protective film forming film is preferably 0.1 to 10% by mass, and 0.1 to 7.5% by mass. It is more preferable that the amount is 0.1 to 5% by mass, and particularly preferably 0.1 to 5% by mass.
  • the ratio is equal to or more than the lower limit value, the effect of using the colorant (I) can be more remarkably obtained.
  • the said ratio is below the said upper limit, the excessive fall of the light transmittance of the film for thermosetting protective film formation is suppressed.
  • the composition (III-1) and the thermosetting protective film-forming film may contain a general-purpose additive (J) as long as the effects of the present invention are not impaired.
  • the general-purpose additive (J) may be a known one and can be arbitrarily selected according to the purpose and is not particularly limited, but preferable examples include, for example, a plasticizer, an antistatic agent, an antioxidant, a gettering agent and the like. Is mentioned.
  • the general-purpose additive (J) contained in the composition (III-1) and the thermosetting protective film-forming film may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination thereof. And the ratio can be arbitrarily selected.
  • the content of the general-purpose additive (J) in the composition (III-1) and the thermosetting protective film-forming film is not particularly limited and may be appropriately selected depending on the purpose.
  • the composition (III-1) preferably further contains a solvent.
  • the composition (III-1) containing a solvent has good handleability.
  • the solvent is not particularly limited, but preferred examples include hydrocarbons such as toluene and xylene; alcohols such as methanol, ethanol, 2-propanol, isobutyl alcohol (2-methylpropan-1-ol) and 1-butanol. Examples include esters such as ethyl acetate; ketones such as acetone and methyl ethyl ketone; ethers such as tetrahydrofuran; amides such as dimethylformamide and N-methylpyrrolidone (compounds having an amide bond).
  • the solvent contained in the composition (III-1) may be only one kind, or two or more kinds, and in the case of two or more kinds, the combination and the ratio thereof can be arbitrarily selected.
  • the solvent contained in the composition (III-1) is preferably methyl ethyl ketone or the like from the viewpoint that the components contained in the composition (III-1) can be mixed more uniformly.
  • the content of the solvent of the composition (III-1) is not particularly limited, and may be appropriately selected depending on the type of components other than the solvent.
  • thermosetting protective film-forming composition ⁇ Method for producing thermosetting protective film-forming composition>>
  • the composition for forming a thermosetting protective film such as the composition (III-1) can be obtained by blending the respective components constituting the composition.
  • the thermosetting protective film-forming composition can be produced, for example, by the same method as in the case of the pressure-sensitive adhesive composition described above, except that the types of compounding components are different.
  • An energy-ray-curable protective film forming film is attached to the back surface of a semiconductor wafer and cured by energy rays to form a protective film.
  • the degree of curing is such that the function is exhibited, and it may be appropriately selected depending on the type of the energy ray-curable protective film forming film.
  • the illuminance of energy rays during energy ray curing of the energy ray-curable protective film forming film is preferably 120 to 280 mW/cm 2 .
  • the light amount of energy rays during the curing is preferably 100 to 1000 mJ/cm 2 .
  • the film for forming an energy ray-curable protective film examples include those containing the energy ray-curable component (a), and those containing the energy ray-curable component (a) and a filler are preferable.
  • the energy ray-curable component (a) is preferably uncured, preferably has tackiness, and more preferably is uncured and has tackiness.
  • composition (IV-1) ⁇ Energy ray curable protective film forming composition (IV-1)>
  • a preferable composition for forming an energy ray-curable protective film for example, the composition for forming an energy ray-curable protective film (IV-1) containing the energy ray-curable component (a) (in the present specification, It may be abbreviated as "composition (IV-1)") and the like.
  • the energy ray-curable component (a) is a component that is cured by irradiation with energy rays, and imparts film-forming properties, flexibility, and the like to the energy-ray-curable protective film-forming film, and is a hard resin after curing. It is also a component for forming a film.
  • the energy ray-curable component (a) include a polymer (a1) having an energy ray-curable group and a weight average molecular weight of 80,000 to 2,000,000, and an energy ray-curable group having a molecular weight of 100 to 80,000.
  • the compound (a2) may be mentioned. At least a part of the polymer (a1) may be crosslinked with a crosslinking agent, or may not be crosslinked.
  • Polymer (a1) having an energy ray-curable group and a weight average molecular weight of 80,000 to 2,000,000 examples include an acrylic polymer (a11) having a functional group capable of reacting with a group of another compound, and An acrylic resin (a1-1) obtained by reacting an energy ray-curable compound (a12) having a group that reacts with a functional group and an energy ray-curable group such as an energy ray-curable double bond is included. ..
  • Examples of the functional group capable of reacting with the group of another compound include a hydroxyl group, a carboxy group, an amino group, and a substituted amino group (wherein one or two hydrogen atoms of the amino group are substituted with a group other than a hydrogen atom). And a epoxy group.
  • the functional group is preferably a group other than a carboxy group in terms of preventing corrosion of circuits such as a semiconductor wafer and a semiconductor chip.
  • the functional group is preferably a hydroxyl group.
  • .Acrylic polymer having functional group (a11) examples include those obtained by copolymerizing the functional group-containing acrylic monomer and the functional group-free acrylic monomer. In addition to the monomer, a monomer other than the acrylic monomer (non-acrylic monomer) may be copolymerized.
  • the acrylic polymer (a11) may be a random copolymer or a block copolymer, and a known method can be adopted as a polymerization method.
  • acrylic monomer having a functional group examples include a hydroxyl group-containing monomer, a carboxy group-containing monomer, an amino group-containing monomer, a substituted amino group-containing monomer, and an epoxy group-containing monomer.
  • hydroxyl group-containing monomer examples include hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, 3-hydroxypropyl (meth)acrylate, (meth) Hydroxyalkyl (meth)acrylates such as 2-hydroxybutyl acrylate, 3-hydroxybutyl (meth)acrylate, 4-hydroxybutyl (meth)acrylate; non-(meth)acrylic non-adhesives such as vinyl alcohol and allyl alcohol. Examples thereof include saturated alcohols (unsaturated alcohols having no (meth)acryloyl skeleton).
  • Examples of the carboxy group-containing monomer include ethylenically unsaturated monocarboxylic acids (monocarboxylic acids having an ethylenically unsaturated bond) such as (meth)acrylic acid and crotonic acid; fumaric acid, itaconic acid, maleic acid, citracone Ethylenically unsaturated dicarboxylic acids such as acids (dicarboxylic acids having an ethylenically unsaturated bond); anhydrides of the above-mentioned ethylenically unsaturated dicarboxylic acids; and (meth)acrylic acid carboxyalkyl esters such as 2-carboxyethyl methacrylate. Be done.
  • monocarboxylic acids having an ethylenically unsaturated bond such as (meth)acrylic acid and crotonic acid
  • fumaric acid, itaconic acid maleic acid, citracone
  • the hydroxyl group-containing monomer is preferable as the acrylic monomer having the functional group.
  • the functional group-containing acrylic monomer constituting the acrylic polymer (a11) may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination and a ratio thereof are arbitrary. You can choose.
  • acrylic monomer having no functional group examples include methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, isopropyl (meth)acrylate, and n-(meth)acrylate.
  • acrylic monomer having no functional group examples include alkoxy such as methoxymethyl (meth)acrylate, methoxyethyl (meth)acrylate, ethoxymethyl (meth)acrylate, and ethoxyethyl (meth)acrylate.
  • the acrylic monomer having no functional group, which constitutes the acrylic polymer (a11) may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination and a ratio thereof are arbitrary. You can choose to.
  • non-acrylic monomers examples include olefins such as ethylene and norbornene; vinyl acetate; styrene.
  • the non-acrylic monomer constituting the acrylic polymer (a11) may be only one kind, or two or more kinds, and in the case of two or more kinds, their combination and ratio can be arbitrarily selected.
  • the ratio (content) of the amount of the structural unit derived from the acrylic monomer having the functional group to the total amount of the structural units constituting the acrylic polymer (a11) is 0.1 to 50 mass. %, more preferably 1 to 40% by mass, particularly preferably 3 to 30% by mass.
  • the energy of the acrylic resin (a1-1) obtained by copolymerization of the acrylic polymer (a11) and the energy ray-curable compound (a12) is increased.
  • the content of the linear curable group makes it possible to easily adjust the degree of curing of the protective film within a preferable range.
  • the acrylic polymer (a11) constituting the acrylic resin (a1-1) may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination and a ratio thereof are arbitrary. You can choose.
  • the ratio of the content of the acrylic resin (a1-1) to the total content of the components other than the solvent is preferably 1 to 70% by mass, more preferably 5 to 60% by mass, and 10 to 50% by mass. Is particularly preferable.
  • the energy ray-curable compound (a12) is one or two kinds selected from the group consisting of an isocyanate group, an epoxy group and a carboxy group as a group capable of reacting with the functional group of the acrylic polymer (a11). Those having the above are preferable, and those having an isocyanate group as the above group are more preferable.
  • the energy ray-curable compound (a12) has, for example, an isocyanate group as the group, the isocyanate group easily reacts with the hydroxyl group of the acrylic polymer (a11) having a hydroxyl group as the functional group.
  • the number of the energy ray-curable groups contained in the molecule of the energy ray-curable compound (a12) is not particularly limited. Can be selected as appropriate.
  • the energy ray-curable compound (a12) preferably has 1 to 5 energy ray-curable groups in a molecule, and more preferably 1 to 3 energy ray-curable groups.
  • Examples of the energy ray-curable compound (a12) include 2-methacryloyloxyethyl isocyanate, meta-isopropenyl- ⁇ , ⁇ -dimethylbenzyl isocyanate, methacryloyl isocyanate, allyl isocyanate, 1,1-(bisacryloyloxymethyl).
  • Ethyl isocyanate An acryloyl monoisocyanate compound obtained by reacting a diisocyanate compound or a polyisocyanate compound with hydroxyethyl (meth)acrylate; Examples thereof include an acryloyl monoisocyanate compound obtained by reacting a diisocyanate compound or a polyisocyanate compound, a polyol compound, and hydroxyethyl (meth)acrylate.
  • the energy ray-curable compound (a12) is preferably 2-methacryloyloxyethyl isocyanate.
  • the energy ray-curable compound (a12) constituting the acrylic resin (a1-1) may be of one type, or of two or more types, and in the case of two or more types, their combination and ratio are arbitrary. You can choose to.
  • the ratio is preferably 20 to 120 mol %, more preferably 35 to 100 mol %, and particularly preferably 50 to 100 mol %. When the ratio of the content is within such a range, the adhesive force of the protective film is increased.
  • the energy ray-curable compound (a12) is a monofunctional compound (having one group in one molecule), the upper limit of the content ratio is 100 mol%.
  • the energy ray-curable compound (a12) is a polyfunctional compound (having two or more groups in one molecule), the upper limit of the content ratio may exceed 100 mol %.
  • the weight average molecular weight (Mw) of the polymer (a1) is preferably 100,000 to 2,000,000, and more preferably 300,000 to 15,000,000.
  • the “weight average molecular weight” is as described above.
  • the polymer (a1) When at least a part of the polymer (a1) is cross-linked with a cross-linking agent, the polymer (a1) has been described as constituting the acrylic polymer (a11).
  • a monomer that does not correspond to any of the monomers and has a group that reacts with a crosslinking agent may be polymerized to be crosslinked at a group that reacts with the crosslinking agent, or the energy ray-curable compound ( The group derived from a12) which reacts with the functional group may be crosslinked.
  • the polymer (a1) contained in the composition (IV-1) and the energy ray-curable protective film-forming film may be only one kind, or two or more kinds, and in the case of two or more kinds, The combination and the ratio can be arbitrarily selected.
  • Compound (a2) having an energy ray-curable group and a molecular weight of 100 to 80,000 examples include groups containing an energy ray-curable double bond, and preferred examples include (meta ) Examples thereof include an acryloyl group and a vinyl group.
  • the compound (a2) is not particularly limited as long as it satisfies the above conditions, but has a low molecular weight compound having an energy ray-curable group, an epoxy resin having an energy ray-curable group, and an energy ray-curable group. Examples thereof include phenolic resins.
  • examples of the low molecular weight compound having an energy ray-curable group include a polyfunctional monomer or oligomer, and an acrylate compound having a (meth)acryloyl group is preferable.
  • examples of the acrylate compound include 2-hydroxy-3-(meth)acryloyloxypropyl methacrylate, polyethylene glycol di(meth)acrylate, propoxylated ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4 -((Meth)acryloxypolyethoxy)phenyl]propane, ethoxylated bisphenol A di(meth)acrylate, 2,2-bis[4-((meth)acryloxydiethoxy)phenyl]propane, 9,9-bis [4-(2-(meth)acryloyloxyethoxy)phenyl]fluorene, 2,2-bis[4-((meth)acryloxypolypropoxy)phenyl]propane, tricyclodecan
  • the epoxy resin having an energy ray-curable group and the phenol resin having an energy ray-curable group are described, for example, in paragraph 0043 of JP-A-2013-194102. Any thing can be used.
  • Such a resin corresponds to a resin constituting a thermosetting component described later, but is treated as the compound (a2) in the present invention.
  • the weight average molecular weight of the compound (a2) is preferably 100 to 30,000, and more preferably 300 to 10,000.
  • the compound (a2) contained in the composition (IV-1) and the film for forming an energy ray-curable protective film may be only one kind, or two or more kinds, and in the case of two or more kinds, a combination thereof. And the ratio can be arbitrarily selected.
  • composition (IV-1) and the energy ray-curable protective film-forming film contain the compound (a2) as the energy ray-curable component (a), the polymer further has no energy ray-curable group. It is preferable to also contain (b). At least a part of the polymer (b) may be crosslinked with a crosslinking agent, or may not be crosslinked.
  • polymer (b) having no energy ray-curable group examples include acrylic polymers, phenoxy resins, urethane resins, polyesters, rubber resins, acrylic urethane resins and the like.
  • the polymer (b) is preferably an acrylic polymer (hereinafter sometimes abbreviated as “acrylic polymer (b-1)”).
  • the acrylic polymer (b-1) may be a known one and may be, for example, a homopolymer of one type of acrylic monomer or a copolymer of two or more types of acrylic monomer. Alternatively, it may be a copolymer of one or more acrylic monomers and one or more monomers other than acrylic monomers (non-acrylic monomers).
  • acrylic monomer constituting the acrylic polymer (b-1) examples include (meth)acrylic acid alkyl ester, (meth)acrylic acid ester having a cyclic skeleton, glycidyl group-containing (meth)acrylic acid ester, Examples thereof include a hydroxyl group-containing (meth)acrylic acid ester and a substituted amino group-containing (meth)acrylic acid ester.
  • substituted amino group is as described above.
  • the (meth)acrylic acid alkyl ester for example, the above-described functional group-free acrylic monomer constituting the acrylic polymer (a11) (wherein the alkyl group constituting the alkyl ester has a carbon number of Is a (meth)acrylic acid alkyl ester and the like) having a chain structure of 1 to 18).
  • Examples of the (meth)acrylic acid ester having a cyclic skeleton include (meth)acrylic acid cycloalkyl esters such as (meth)acrylic acid isobornyl and (meth)acrylic acid dicyclopentanyl; Aralkyl esters of (meth)acrylic acid such as benzyl (meth)acrylate; (Meth)acrylic acid cycloalkenyl ester such as dicyclopentenyl ester; Examples thereof include (meth)acrylic acid cycloalkenyloxyalkyl esters such as (meth)acrylic acid dicyclopentenyloxyethyl ester.
  • Examples of the glycidyl group-containing (meth)acrylic acid ester include glycidyl (meth)acrylate.
  • Examples of the hydroxyl group-containing (meth)acrylic acid ester include hydroxymethyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, 2-hydroxypropyl (meth)acrylate, and 3-hydroxy (meth)acrylate. Examples thereof include propyl, 2-hydroxybutyl (meth)acrylate, 3-hydroxybutyl (meth)acrylate, and 4-hydroxybutyl (meth)acrylate.
  • Examples of the substituted amino group-containing (meth)acrylic acid ester include N-methylaminoethyl (meth)acrylate.
  • non-acrylic monomer constituting the acrylic polymer (b-1) examples include olefins such as ethylene and norbornene; vinyl acetate; styrene.
  • Examples of the polymer (b) having no energy ray-curable group, at least a part of which is crosslinked with a crosslinking agent include those in which the reactive functional group in the polymer (b) has reacted with the crosslinking agent. Can be mentioned.
  • the reactive functional group may be appropriately selected according to the type of the cross-linking agent and is not particularly limited.
  • examples of the reactive functional group include a hydroxyl group, a carboxy group and an amino group, and among these, a hydroxyl group having a high reactivity with an isocyanate group is preferable.
  • the reactive functional group include a carboxy group, an amino group, an amide group, and among these, a carboxy group having high reactivity with an epoxy group is preferable. ..
  • the reactive functional group is preferably a group other than a carboxy group from the viewpoint of preventing the corrosion of the circuit of the semiconductor wafer or the semiconductor chip.
  • Examples of the polymer (b) having the reactive functional group and not having the energy ray-curable group include those obtained by polymerizing at least the monomer having the reactive functional group.
  • the acrylic polymer (b-1) one or both of the above-mentioned acrylic monomer and non-acrylic monomer, which are mentioned as the monomer constituting the acrylic polymer (b-1), have the above-mentioned reactive functional group. You can use it.
  • Examples of the polymer (b) having a hydroxyl group as a reactive functional group include those obtained by polymerizing a hydroxyl group-containing (meth)acrylic acid ester, and in addition to this, the above-mentioned acryl Examples thereof include those obtained by polymerizing a monomer in which one or two or more hydrogen atoms are substituted with the above-mentioned reactive functional group in the system monomer or the non-acrylic monomer.
  • the ratio (content) of the amount of the structural unit derived from the monomer having a reactive functional group to the total amount of the structural unit constituting the polymer (b) is 1 to 20. It is preferably mass%, and more preferably 2 to 10 mass%. When the ratio is within such a range, the degree of crosslinking in the polymer (b) becomes a more preferable range.
  • the weight average molecular weight (Mw) of the polymer (b) having no energy ray-curable group is preferably 10,000 to 2,000,000 from the viewpoint that the film-forming property of the composition (IV-1) is better. It is more preferably 100,000 to 15,000,000.
  • the "weight average molecular weight" is as described above.
  • the polymer (b) having no energy ray-curable group contained in the composition (IV-1) and the energy ray-curable protective film-forming film may be only one type, or may be two or more types. When there are more than one species, their combination and ratio can be arbitrarily selected.
  • compositions (IV-1) include those containing one or both of the polymer (a1) and the compound (a2). And, when the composition (IV-1) contains the compound (a2), it is preferable that the composition (IV-1) further contains a polymer (b) having no energy ray-curable group. It is also preferable to contain.
  • the composition (IV-1) may contain neither the compound (a2) but the polymer (a1) and the polymer (b) having no energy ray-curable group. ..
  • the composition (IV-1) contains the polymer (a1), the compound (a2) and the polymer (b) having no energy ray-curable group
  • the composition (IV-1) is
  • the content of the compound (a2) is preferably 10 to 400 parts by mass based on 100 parts by mass of the total content of the polymer (a1) and the polymer (b) having no energy ray-curable group. More preferably 30 to 350 parts by mass.
  • the ratio of the total content of the energy ray-curable component (a) and the polymer (b) having no energy ray-curable group to the total content of components other than the solvent that is, The ratio of the total content of the energy ray-curable component (a) and the polymer (b) having no energy ray-curable group to the total mass of the film in the film for forming an energy ray-curable protective film is It is preferably 5 to 90% by mass, more preferably 10 to 80% by mass, and particularly preferably 20 to 70% by mass.
  • the energy ray-curable property of the energy ray-curable protective film forming film becomes better.
  • the composition (IV-1) comprises a thermosetting component, a filler, a coupling agent, a cross-linking agent, a photopolymerization initiator, a colorant, and a general-purpose additive, depending on the purpose, in addition to the energy ray-curable component. You may contain 1 type(s) or 2 or more types selected from the group consisting of.
  • thermosetting component, the filler, the coupling agent, the crosslinking agent, the photopolymerization initiator, the colorant, and the general-purpose additive in the composition (IV-1) are each the thermosetting in the composition (III-1).
  • the energy ray-curable protective film-forming film formed by using the composition (IV-1) containing the energy ray-curable component and the thermosetting component has an adhesive force to an adherend by heating. And the strength of the resin film formed from this energy ray-curable protective film-forming film is also improved. Further, the energy ray-curable protective film-forming film formed by using the composition (IV-1) containing the energy ray-curable component and the colorant is the thermosetting protective film-forming film described above. The same effect as when the film for use contains the colorant (I) is exhibited.
  • thermosetting component the filler, the coupling agent, the cross-linking agent, the photopolymerization initiator, the colorant, and the general-purpose additive may be used each alone. Two or more kinds may be used in combination, and when two or more kinds are used in combination, their combination and ratio can be arbitrarily selected.
  • thermosetting component the filler, the coupling agent, the cross-linking agent, the photopolymerization initiator, the colorant and the general-purpose additive in the composition (IV-1) may be appropriately adjusted according to the purpose, It is not particularly limited.
  • the composition (IV-1) further contains a solvent since the handling property thereof is improved by dilution.
  • the solvent contained in the composition (IV-1) include the same solvents as those in the composition (III-1).
  • the solvent contained in the composition (IV-1) may be only one kind or two or more kinds.
  • the content of the solvent in the composition (IV-1) is not particularly limited, and may be appropriately selected depending on, for example, the type of components other than the solvent.
  • the energy ray-curable protective film forming composition such as the composition (IV-1) can be obtained by blending the respective components for constituting the same.
  • the energy ray-curable protective film-forming composition can be produced, for example, by the same method as in the case of the pressure-sensitive adhesive composition described above, except that the types of compounding components are different.
  • the release film is an optional component which the protective film-forming composite sheet may be provided as an outermost layer on the protective film forming film side.
  • a protective film-forming composite sheet is provided with a release film on the protective film-forming film, when the release film is removed from the protective film-forming film, the protective film-forming composite sheet suppresses peeling electrification. To be done.
  • the release film may be a known release film, and examples thereof include those in which one side of a resin film such as a polyethylene terephthalate film is subjected to a release treatment such as silicone treatment.
  • the release film may have the same structure as the above-mentioned release property improving layer as the intermediate layer.
  • the thickness of the release film is not particularly limited and may be, for example, 10 to 1000 ⁇ m.
  • the composite sheet for forming a protective film can be produced by laminating the above-mentioned layers in a corresponding positional relationship.
  • the method of forming each layer is as described above.
  • the above-mentioned pressure-sensitive adhesive composition on the substrate or the antistatic substrate when laminating the pressure-sensitive adhesive layer on the substrate or on the antistatic substrate, the above-mentioned pressure-sensitive adhesive composition on the substrate or the antistatic substrate. It may be applied and dried if necessary.
  • This method when laminating the pressure-sensitive adhesive layer on the uneven surface of the substrate or antistatic substrate, and when laminating the pressure-sensitive adhesive layer on the smooth surface of the substrate or antistatic substrate, Can be applied to any of the above.
  • This method is particularly suitable for laminating the pressure-sensitive adhesive layer on the uneven surface. The reason is that when this method is applied, a high effect of suppressing the generation of voids can be obtained between the uneven surface of the substrate or the antistatic substrate and the pressure-sensitive adhesive layer. ..
  • the method for laminating the pressure-sensitive adhesive layer is the same as the method for laminating the pressure-sensitive adhesive layer described above, except that the antistatic composition (VI-1) is used in place of the pressure-sensitive adhesive composition.
  • a back surface antistatic layer or a surface antistatic layer can be laminated thereon.
  • the following method can also be applied. That is, a pressure-sensitive adhesive composition is applied onto a release film, and if necessary dried to form a pressure-sensitive adhesive layer on the release film, and the exposed surface of this pressure-sensitive adhesive layer is used as a base material or a charged material.
  • the pressure-sensitive adhesive layer can also be laminated on the base material or the antistatic base material by a method of laminating the pressure-sensitive adhesive base material on one surface of the antistatic base material. This method is particularly suitable for laminating the pressure-sensitive adhesive layer on the smooth surface. The reason is that when this method is applied, a high effect of suppressing the generation of voids can be obtained if it is between the smooth surface of the substrate or the antistatic substrate and the pressure-sensitive adhesive layer. Is.
  • a back surface antistatic layer or a surface antistatic layer can be laminated on the antistatic substrate.
  • the pressure-sensitive adhesive layer, the back surface antistatic layer or the surface antistatic layer is laminated on the base material or the antistatic base material has been taken as an example, but the above-mentioned method is, for example, on the base material. Alternatively, it can be applied to the case of laminating another layer such as the case of laminating the intermediate layer on the antistatic substrate.
  • a protective film-forming composition is formed on the pressure-sensitive adhesive layer. It is possible to directly form the protective film-forming film by coating. For layers other than the film for forming a protective film, this layer can be laminated on the pressure-sensitive adhesive layer in the same manner by using the composition for forming this layer.
  • a new layer (hereinafter abbreviated as “second layer”) is formed on any layer (hereinafter abbreviated as “first layer”) already laminated on the substrate,
  • first layer a layer already laminated on the substrate
  • a composition for forming the second layer is applied onto the first layer. Then, a method of drying can be applied if necessary.
  • the second layer is formed on the release film in advance by using the composition for forming the second layer, and the second layer is formed on the side opposite to the side in contact with the release film. It is preferable to form a continuous two-layer laminated structure by laminating the exposed surface of (1) with the exposed surface of the first layer.
  • the composition is preferably applied to the release-treated surface of the release film.
  • the release film may be removed as needed after the laminated structure is formed.
  • the case where the protective film-forming film is laminated on the pressure-sensitive adhesive layer has been described as an example, but for example, when the intermediate layer is laminated on the adhesive layer, the protective film-forming film is laminated on the intermediate layer.
  • the target laminated structure can be arbitrarily selected, for example, when the pressure-sensitive adhesive layer is laminated on the surface antistatic layer.
  • all layers other than the base material constituting the protective film-forming composite sheet can be formed on the release film in advance and laminated on the surface of the target layer by a method of laminating.
  • the layer adopting such a step may be appropriately selected to manufacture the protective film-forming composite sheet.
  • the protective film-forming composite sheet is usually stored with a release film attached to the surface of the outermost layer (eg, protective film forming film) on the side opposite to the support sheet. Therefore, a composition for forming a layer forming the outermost layer, such as a composition for forming a protective film, should be applied onto this release film (preferably the release-treated surface), and dried if necessary. Then, a layer constituting the outermost layer is formed on the release film, and the remaining layers are laminated on any of the above-described methods on the exposed surface of the layer opposite to the side in contact with the release film. Then, by leaving the release film in a bonded state without removing it, a protective film-forming composite sheet with a release film is obtained.
  • a release film attached to the surface of the outermost layer (eg, protective film forming film) on the side opposite to the support sheet. Therefore, a composition for forming a layer, such as a composition for forming a protective film, should be applied onto this release film (preferably the release-
  • the composite sheet for forming a protective film can be used for manufacturing a semiconductor chip.
  • the method of manufacturing a semiconductor chip at this time is, for example, a step of attaching the protective film forming film in the protective film forming composite sheet to a semiconductor wafer to produce a pre-division laminate (hereinafter, referred to as “attaching step”). Abbreviated) and a step of curing the protective film forming film after being attached to the semiconductor wafer to form a protective film (hereinafter, may be abbreviated as “protective film forming step”).
  • a step of irradiating the inside of the semiconductor wafer with a laser beam to form a modified layer inside the semiconductor wafer (hereinafter, may be abbreviated as “modified layer forming step”);
  • the semiconductor wafer is divided by expanding the pre-division laminate in which the protective film forming film is attached and the modified layer is formed inside the semiconductor wafer, and the protective film or the protective film forming film is cut.
  • a supporting sheet, the protective film or protective film-forming film after cutting provided on one surface (in other words, the first surface) of the supporting sheet, and the protective film or protective film formation after cutting.
  • Divided laminated body provided with a plurality of semiconductor chips provided on a surface (may be referred to as "first surface” in this specification) of the film for use opposite to the support sheet side. (Hereinafter, may be abbreviated as “divided laminate manufacturing step”) and a semiconductor chip provided with the cut protective film or the protective film forming film in the divided laminate. And a step of pulling the support sheet apart from the support sheet (hereinafter, may be abbreviated as “pickup step”).
  • a method of manufacturing a semiconductor chip includes, for example, the attaching step, the protective film forming step, The semiconductor wafer is divided, the protective film or the film for forming a protective film is cut, and a supporting sheet and the protective film or a film for forming a protective film, which is provided on one surface of the supporting sheet, after cutting And a divided laminated body manufacturing step including a plurality of semiconductor chips provided on the surface of the protective film after cutting or the protective film-forming film opposite to the supporting sheet side, and the dividing.
  • the method includes a step of expanding the completed laminated body and the pickup step.
  • the protective film forming step, the modified layer forming step, the divided laminated body manufacturing step and the pickup step are performed. Then, the divided laminated body manufacturing step and the pickup step are performed in this order, but the protective film forming step may be performed at any stage as long as it is after the attaching step. If the protective film forming film does not have curability, the protective film forming step is not performed.
  • the method for manufacturing a semiconductor chip further comprises a step of irradiating the protective film forming film or the protective film with a laser beam between the pasting step and the pickup step to perform printing (hereinafter, "laser printing step”). May be abbreviated).
  • laser printing step a step of irradiating the protective film forming film or the protective film with a laser beam between the pasting step and the pickup step to perform printing.
  • the laser printing step May be abbreviated.
  • the manufacturing method after the attaching step, the laser printing step, the protective film forming step, the divided laminate manufacturing step and the pickup step are performed. Then, the pickup step is performed after the divided laminated body manufacturing step and the laser printing step.
  • the order of performing the protective film forming step, the laser printing step, the divided laminated body manufacturing step and the pickup step is as follows. It can be arbitrarily set according to.
  • the thickness of the semiconductor wafer to be used for the protective film-forming composite sheet is not particularly limited, but is preferably 30 to 1000 ⁇ m, and 100 to 100 ⁇ m, from the viewpoint of easier division into semiconductor chips described later. More preferably, it is 400 ⁇ m.
  • FIG. 14 to 18 are cross-sectional views for schematically explaining the method of manufacturing a semiconductor chip according to the embodiment of the present invention.
  • the manufacturing method in the case where the protective film forming composite sheet is the one shown in FIG. 1 will be described as an example.
  • the manufacturing method of the present embodiment uses the protective film-forming film in the protective film-forming composite sheet after removing the release film.
  • a step of pasting onto a semiconductor wafer to produce a pre-division laminate (a pasting step), and a step of curing the protective film-forming film after pasting onto the semiconductor wafer to form a protective film (protective film formation) Step), irradiating the inside of the semiconductor wafer with laser light to form a modified layer inside the semiconductor wafer (modified layer forming step), and attaching the protective film or the protective film forming film.
  • the semiconductor wafer is divided by expanding the undivided laminate having the modified layer formed inside the semiconductor wafer, and the protective film is cut to form a support sheet and one surface of the support sheet ( The protective film after cutting provided on the first surface) and a plurality of semiconductor chips provided on the surface (first surface) of the protective film after cutting opposite to the support sheet side. And a step of producing a divided laminated body including (divided laminated body producing step), and separating the semiconductor chip having the cut protective film in the divided laminated body from the support sheet. And a step of picking up (pickup step).
  • the manufacturing method (1) may further include a laser printing step between the attaching step and the pickup step.
  • a laser printing step may be provided between the attaching step and the protective film forming step, and laser printing may be performed between the protective film forming step and the modified layer forming step. It may have a step, and may have a laser printing step between the modified layer forming step and the divided laminate manufacturing step, and the order of providing the laser printing step is not limited to these. Instead, it can be set arbitrarily according to the purpose.
  • FIG. 14 is a cross-sectional view for schematically explaining one embodiment of such a semiconductor chip manufacturing method (1).
  • the protective film-forming composite sheet as shown in FIG.
  • the composite sheet 101 for film formation is used.
  • the composite sheet for forming a protective film after removing the release film 15 is also denoted by reference numeral 101.
  • the protective film forming film 13 may be softened by heating and attached to the semiconductor wafer 9. In this case, for example, the protective film forming film 13 may be heated at 70° C. for 1 minute and then immediately attached to the semiconductor wafer 9.
  • the semiconductor wafer 9 bumps and the like on the circuit surface are not shown.
  • the protective film forming film 13 attached to the semiconductor wafer 9 is cured, and as shown in FIG. To form'.
  • the protective film forming film 13 is thermosetting, the protective film forming film 13 is heated to form the protective film 13′.
  • the protective film 13′ is formed by irradiating the protective film forming film 13 with energy rays through the support sheet 10.
  • the protective film forming composite sheet after the protective film forming film 13 has become the protective film 13′ is indicated by reference numeral 101′. This also applies to subsequent figures.
  • the curing conditions of the protective film forming film 13, that is, the heating temperature and the heating time at the time of thermosetting, and the illuminance and the light amount of the energy beam at the time of energy beam curing are as described above. ..
  • the modified layer forming step laser light is irradiated so as to focus on the focus set inside the semiconductor wafer 9, and as shown in FIG. Then, the modified layer 20 is formed inside the semiconductor wafer 9.
  • the laser light emitting element is shown by SD.
  • the laser beam is emitted from the side opposite to the support sheet 10, it may be emitted from the side of the support sheet 10. This also applies to subsequent figures.
  • the protective film 13′ is expanded in the surface direction, and the semiconductor wafer 9 is divided at the portion of the modified layer 20 to divide the protective sheet 13′ into one of the support sheet and one of the support sheets.
  • the protective film 130′ after cutting provided on the surface in other words, the first surface
  • the surface of the protective film 130′ after cutting that is opposite to the support sheet side in the present specification, A divided laminated body including a plurality of semiconductor chips provided on the "first surface” may be manufactured.
  • a plurality of semiconductor chips 9'having the protective film 130' after cutting are obtained.
  • the protective film 13' is cut (divided) at a position along the peripheral edge of the semiconductor chip 9'.
  • the composite sheet for forming a protective film has a surface resistivity of the outermost layer on the support sheet side of the composite sheet for forming a protective film of 1.0 ⁇ 10 11 ⁇ / ⁇ or less, and thus the composite sheet for forming a protective film.
  • the sheets and the stacked chips are prevented from being charged.
  • the semiconductor chip 9 ′ having the cut protective film 130 ′ is removed from the support sheet 10. Separate and pick up.
  • the direction of the pickup is indicated by the arrow I, but this is the same in the subsequent figures.
  • a vacuum collet or the like can be used as the separating means 8 for separating the semiconductor chip 9′ together with the protective film 130′ from the support sheet 10.
  • the target semiconductor chip 9' is obtained as a semiconductor chip with a protective film.
  • the surface resistivity of the outermost layer on the side of the supporting sheet in the composite sheet for forming a protective film after expansion is 1.0 ⁇ 10 11 ⁇ / ⁇ or less, it is obtained by the production method (1).
  • the semiconductor chip with a protective film has excellent characteristics because the circuit breakage due to electrification during pickup is suppressed.
  • the modified layer forming step and the divided laminated body manufacturing step are performed after the protective film forming step.
  • the protective film forming step is not performed.
  • the modified layer forming step and the divided laminated body manufacturing step may be performed, and the protective film forming step may be performed after the modified layer forming step and the divided laminated body manufacturing step (this embodiment is referred to as “manufacturing method (2)”). Sometimes called).
  • Method of manufacturing semiconductor chip (2) That is, in the manufacturing method (manufacturing method (2)) of the present embodiment, the protective film-forming film in the protective film-forming composite sheet after removing the release film is attached to a semiconductor wafer to form a pre-division laminate. And a step of forming a modified layer inside the semiconductor wafer by irradiating the inside of the semiconductor wafer with a laser beam (a modified layer forming step); By expanding the undivided laminate having the modified layer formed inside the semiconductor wafer to which the film forming film is attached, the semiconductor wafer is divided, and the protective film forming film is cut to form a support sheet.
  • the protective film-forming film after cutting provided on one surface of the support sheet and the surface of the protective film-forming film after cutting that is opposite to the support sheet side.
  • a step of producing a divided laminated body including a plurality of semiconductor chips (divided laminated body producing step), and curing the protective film forming film after being attached to the semiconductor wafer to form a protective film.
  • the manufacturing method (2) may further include a laser printing step between the attaching step and the pickup step.
  • a laser printing step may be provided between the attaching step and the modified layer forming step, and the laser printing step may be provided between the modified layer forming step and the divided laminate manufacturing step.
  • a laser printing step may be included, and a laser printing step may be provided between the divided laminate manufacturing step and the protective film forming step, and the order of providing the laser printing step may be set to these. It is not limited and can be set arbitrarily according to the purpose.
  • FIG. 15 is a cross-sectional view for schematically explaining one embodiment of a method for manufacturing such a semiconductor chip.
  • the modified layer forming step laser light is irradiated so as to focus on a focus set inside the semiconductor wafer 9, and as shown in FIG.
  • the modified layer 20 is formed inside the semiconductor wafer 9.
  • the semiconductor wafer 9 on which the modified layer 20 is formed and the protective film forming film 13 is attached to the back surface 9b is protected together with the protective film forming film 13.
  • the semiconductor wafer 9 is divided at the modified layer 20 and supported.
  • a plurality of semiconductor chips provided on the opposite surface (which may be referred to as the “first surface” in this specification) are formed into a divided laminated body.
  • the protective film forming film 13 is cut (divided) at a position along the peripheral edge of the semiconductor chip 9'.
  • the protective film forming film 13 after the cutting is indicated by reference numeral 130.
  • the protective film forming film 130 is cured to form the protective film 130′ on the semiconductor chip 9′ as shown in FIG. 15(e).
  • the protective film forming step in the manufacturing method (2) can be performed by the same method as the protective film forming step in the manufacturing method (1). By carrying out this step, a semiconductor chip with a protective film can be obtained after completion of the divided laminated body manufacturing step of the manufacturing method (1), that is, in the same state as in FIG.
  • the semiconductor chip 9′ having the cut protective film 130′ is separated from the support sheet 10 and picked up.
  • the pickup step in the manufacturing method (2) can be performed by the same method as the pickup step in the manufacturing method (1) (as shown in FIG. 12F).
  • the target semiconductor chip 9' is obtained as a semiconductor chip with a protective film. Since the surface resistivity of the outermost layer on the side of the supporting sheet in the composite sheet for forming a protective film after expansion is 1.0 ⁇ 10 11 ⁇ / ⁇ or less, it is obtained by the production method (2).
  • the semiconductor chip with a protective film has excellent characteristics because the circuit breakage due to electrification during pickup is suppressed.
  • the pickup step is performed after the protective film forming step, but in the semiconductor chip manufacturing method according to the present embodiment, the pickup step is performed without performing the protective film forming step.
  • the protective film-forming film in the protective film-forming composite sheet after the release film is removed is attached to a semiconductor wafer to form a pre-division laminate.
  • a step of forming a modified layer inside the semiconductor wafer by irradiating the inside of the semiconductor wafer with a laser beam (modified layer forming step), and Expanding, dividing the semiconductor wafer, cutting the protective film forming film, a supporting sheet, and provided on one surface of the supporting sheet, the protective film forming film after cutting,
  • a step of producing a divided laminated body including a plurality of semiconductor chips provided on the surface of the protective film-forming film after cutting that is opposite to the supporting sheet side (divided laminated body producing step ), and a step of separating the semiconductor chip provided with the protective film-forming film after cutting in the divided laminated body from the support sheet to pick up the semiconductor chip (pickup step), and attaching the semiconductor chip to the semiconductor wafer.
  • the manufacturing method (3) may further include a laser printing step between the attaching step and the pickup step.
  • a laser printing step may be provided between the attaching step and the modified layer forming step, and the laser printing step may be provided between the modified layer forming step and the divided laminate manufacturing step.
  • a laser printing step may be included, and a laser printing step may be included between the divided laminate manufacturing step and the pickup step, and the order of providing the laser printing step is not limited to these. Instead, it can be set arbitrarily according to the purpose.
  • FIG. 16 is a cross-sectional view for schematically explaining an embodiment of such a semiconductor chip manufacturing method.
  • the sticking step, the modified layer forming step, and the divided laminated body manufacturing step of the manufacturing method (3) are respectively the peeling step of the manufacturing method (2).
  • the attaching step and the dividing step are respectively the peeling step of the manufacturing method (2).
  • the semiconductor chip 9′ provided with the cut protective film forming film 130 is separated from the support sheet 10 and picked up.
  • the pickup step in the manufacturing method (3) can be performed by the same method as the pickup step in the manufacturing methods (1) and (2) (as shown in FIGS. 14F and 15F).
  • the protective film forming step of the manufacturing method (3) the protective film forming film 130 after pickup is cured to form a protective film 130' on the semiconductor chip 9', as shown in FIG. 16(f). ..
  • the protective film forming step in the manufacturing method (3) may be performed by the same method as the protective film forming step in the manufacturing methods (1) and (2). it can.
  • the protective film forming step in the manufacturing method (3) irradiates the protective film forming film 130 with energy rays through the support sheet 10. Except that it is not necessary, it can be carried out by the same method as the protective film forming step in the manufacturing methods (1) and (2).
  • the target semiconductor chip 9' is obtained as a semiconductor chip with a protective film. Since the surface resistivity of the outermost layer on the side of the supporting sheet in the composite sheet for forming a protective film after expansion is 1.0 ⁇ 10 11 ⁇ / ⁇ or less, it is obtained by the production method (3). In addition, the semiconductor chip with a protective film has excellent characteristics in that the circuit is prevented from being broken due to electrification during pickup.
  • the modified layer 20 is formed inside the semiconductor wafer 9 without using a dicing blade.
  • a method of expanding the semiconductor wafer 9 in the modified layer 20 is applied.
  • the modified layer forming step may be performed at any step as long as it is a step before the divided laminate manufacturing step. For example, before the attaching step, the attaching step and the protective film forming step are performed. It can be carried out at any stage, such as during, etc.
  • the manufacturing method of the present embodiment uses the protective film-forming film in the protective film-forming composite sheet after removing the release film.
  • a step of pasting onto a semiconductor wafer to produce a pre-division laminate (a pasting step), and a step of curing the protective film-forming film after pasting onto the semiconductor wafer to form a protective film (protective film formation) Process), dividing the semiconductor wafer, cutting the protective film, and supporting sheet, the protective film after cutting provided on one surface of the supporting sheet, and the protective film after cutting.
  • a divided laminated body manufacturing step a step of expanding the divided laminated body, and the divided laminated body
  • the semiconductor chip provided with the protective film after cutting is separated from the support sheet, and a pickup step is included.
  • the manufacturing method (4) may further include a laser printing step between the attaching step and the pickup step.
  • the order of providing the laser printing process can be arbitrarily set according to the purpose.
  • FIG. 17 is a cross-sectional view for schematically explaining an embodiment of such a semiconductor chip manufacturing method (4).
  • the protective film-forming film 101 shown in FIG. 1 when used, as shown in FIG. 17A, as in the manufacturing method (1), the protective film-forming film 101 is used. Remove the release film 15 from the.
  • the composite sheet for forming a protective film after removing the release film 15 is also denoted by reference numeral 101.
  • the protective film forming film 13 in the protective film forming composite sheet 101 is attached to the back surface 9b of the semiconductor wafer 9.
  • the protective film forming film 13 may be softened by heating and attached to the semiconductor wafer 9.
  • the protective film forming film 13 may be heated at 70° C. for 1 minute and then immediately attached to the semiconductor wafer 9.
  • bumps and the like on the circuit surface are not shown.
  • the protective film forming film 13 attached to the semiconductor wafer 9 is thermally cured, and as shown in FIG. Forming 13'.
  • the protective film forming composite sheet after the protective film forming film 13 has become the protective film 13′ is indicated by reference numeral 101′. This also applies to subsequent figures.
  • thermosetting conditions of the protective film forming film 13, that is, the heating temperature and the heating time during the thermosetting are as described above.
  • the protective film forming composite sheet 101′ is placed on the dicing table, the semiconductor wafer 9 is divided, and the protective film 13′ is cut. As shown in FIG. 17D, a plurality of semiconductor chips 9′ having the protective film 130′ after cutting is obtained. The protective film 13' is cut (divided) at a position along the peripheral edge of the semiconductor chip 9'.
  • the protective film forming composite sheet 101 ′ includes the support sheet 10 having the back surface antistatic layer 17, and the surface resistivity of the protective film forming composite sheet 101 ′ is 1.0 ⁇ 10 11 ⁇ / ⁇ or less.
  • the method of dividing the semiconductor wafer 9 and cutting the protective film 13′ in the dividing step may be a known method. Examples of such a method include a method of dividing (cutting) the semiconductor wafer 9 together with the protective film 13′ using a dicing blade.
  • the support sheet 10 is expanded in the surface direction.
  • the expanding direction is indicated by the arrow EP, but this is the same in the subsequent figures.
  • a plurality of semiconductor chips 9′ having protective films 130′ after cutting are provided in the pickup step, as shown in FIG. 17(f). Are separated from the support sheet 10 and picked up.
  • the direction of the pickup is indicated by the arrow I, but this is the same in the subsequent figures.
  • a vacuum collet or the like can be used as the separating means 8 for separating the semiconductor chip 9′ together with the protective film 130′ from the support sheet 10.
  • the target semiconductor chip 9' is obtained as a semiconductor chip with a protective film.
  • the manufacturing method of the present embodiment uses the protective film-forming film in the protective film-forming composite sheet after removing the release film.
  • a step of attaching to a semiconductor wafer to produce a pre-division laminate attaching step), dividing the semiconductor wafer, cutting the protective film-forming film, a support sheet, and one surface of the support sheet
  • the protective film forming film after cutting provided on the above, and a plurality of semiconductor chips provided on the surface opposite to the supporting sheet side of the protective film forming film after cutting,
  • a step of preparing a divided laminated body, a step of expanding the divided laminated body, and a semiconductor chip provided with the protective film forming film after cutting in the divided laminated body is separated from the support sheet.
  • the manufacturing method (5) may further include a laser printing step between the attaching step and the pickup step.
  • the order of providing the laser printing process can be arbitrarily set according to the purpose.
  • FIG. 18 is a cross-sectional view for schematically explaining one embodiment of such a semiconductor chip manufacturing method (5).
  • the pasting step of the manufacturing method (5) can also be performed in the same manner as the pasting step of the manufacturing method (1) (as shown in FIG. 14(b)), as shown in FIG. 18(b).
  • the semiconductor wafer 9 is divided and the protective film forming film 13 is cut to form the protective film after cutting as shown in FIG. 18C.
  • a plurality of semiconductor chips 9′ provided with the film for use 130 are obtained.
  • the protective film forming film 130 is cut (divided) at a position along the peripheral edge of the semiconductor chip 9′.
  • the protective film forming composite sheet 101 ′ includes the support sheet 10 having the back surface antistatic layer 17, and the surface resistivity of the protective film forming composite sheet 101 ′ is 1.0 ⁇ 10 11 ⁇ / ⁇ or less. Therefore, it is possible to prevent foreign matter from being mixed between the protective film forming composite sheet 101′ and the dicing table due to the influence of static electricity or the like. As a result, it is possible to prevent the chipping from occurring when the semiconductor wafer 9 is divided and the protective film 13′ is cut.
  • the method of dividing the semiconductor wafer 9 and cutting the protective film forming film 130 in the dividing step may be a known method. Examples of such a method include a method of dividing (cutting) the semiconductor wafer 9 together with the protective film forming film 130 using a dicing blade.
  • the semiconductor chip 9′ provided with the cut protective film forming film 130 is separated from the support sheet 10 and picked up.
  • the pickup step in the manufacturing method (5) can be performed by the same method as the pickup step in the manufacturing method (3) (as shown in FIG. 16E).
  • the protective film forming film 130 after picking up is thermally cured to form a protective film 130′ on the semiconductor chip 9′ as shown in FIG. 16(f).
  • the protective film forming step in the manufacturing method (5) can be performed by the same method as the protective film forming step in the manufacturing method (3).
  • the target semiconductor chip 9' is obtained as a semiconductor chip with a protective film.
  • the method of manufacturing a semiconductor chip using the composite film 101 for forming a protective film shown in FIG. 1 has been described, but the method of manufacturing a semiconductor chip of the present invention is not limited to this.
  • the method for manufacturing a semiconductor chip according to the present invention is performed by using the protective film forming composite sheets 102 to 105 shown in FIGS. 2 to 5, the protective film forming composite sheets 201 to 205 shown in FIGS.
  • a semiconductor chip can be produced in the same manner by using a protective sheet-forming composite sheet 301, 401, or 501 shown in FIG. 13 other than the protective film-forming composite sheet 101 shown in FIG.
  • the composite film for forming a protective film of another embodiment based on the difference in the structure of these sheets, in the above-described manufacturing method, the addition, change, deletion, etc. of steps are appropriately performed.
  • the semiconductor chip may be manufactured.
  • the semiconductor chip with the protective film is obtained by the above-mentioned manufacturing method, the semiconductor chip is flip-chip connected to the circuit surface of the substrate by a known method to form a semiconductor package.
  • a target semiconductor device can be manufactured by using the package (not shown).
  • Antistatic composition (VI-1)-1 A polypyrrole solution obtained by emulsifying polypyrrole with a reactive emulsifier and dissolving it in an organic solvent.
  • Antistatic composition (VI-1)-2 "UVH515" manufactured by Idemitsu Kosan Co., Ltd.
  • Antistatic composition (VI-1)-3 230 parts by mass of antimony-doped tin oxide (ATO) filler having an average particle diameter of 0.1 ⁇ m is added to 100 parts by mass of epoxy acrylate resin (weight average molecular weight 2000), and photopolymerization is initiated.
  • ATO filler-containing coating agent containing 2 parts by mass of an agent (IRGACURE 184 manufactured by BASF).
  • (A)-1 Copolymerized with n-butyl acrylate (10 parts by mass), methyl acrylate (70 parts by mass), glycidyl methacrylate (5 parts by mass) and 2-hydroxyethyl acrylate (15 parts by mass)
  • An acrylic resin (weight average molecular weight 400000, glass transition temperature -1°C).
  • thermosetting Protective Film Forming Composition (III-1) Polymer component (A)-1 (150 parts by mass), epoxy resin (B1)-1 (10 parts by mass), epoxy resin (B1)-2 (60 parts by mass), epoxy resin (B1)-3 (30 parts by mass) Parts), thermosetting agent (B2)-1 (2.4 parts by mass), curing accelerator (C)-1 (2.4 parts by mass), filler (D)-1 (320 parts by mass), and coloring.
  • the agent (I)-1 (1.16 parts by mass) is mixed, and further diluted with methyl ethyl ketone so that the total concentration thereof is 55% by mass, and the thermosetting protective film-forming composition (III- 1) was prepared.
  • thermosetting protective film forming film A release film (“SP-PET381031” manufactured by Lintec Co., thickness 38 ⁇ m) in which one side of a polyethylene terephthalate film was subjected to release treatment by silicone treatment was used, and the thermosetting protective film obtained above was applied to the release treated surface.
  • the composition (III-1) for forming was applied and dried at 100° C. for 2 minutes to produce a thermosetting protective film-forming film having a thickness of 40 ⁇ m.
  • the surface roughness Ra of one surface is 0.2 ⁇ m
  • the surface roughness Ra of the other surface is smaller than this value, and thus one surface is an uneven surface and the other surface is
  • a polypropylene base material (thickness: 80 ⁇ m), which is a smooth surface, was prepared, and the corrugated surface was subjected to corona discharge treatment.
  • the antistatic composition (VI-1)-2 was applied to the uneven surface of the polypropylene base material using a bar coater, and dried at 50° C. for 1 minute to form a thick film on the base material.
  • a backside antistatic layer having a thickness of 170 nm was formed.
  • the acrylic polymer is a copolymer of 2-ethylhexyl acrylate (60 parts by mass), methyl methacrylate (30 parts by mass), and 2-hydroxyethyl acrylate (10 parts by mass), which is a weight average molecular weight. Is 600,000.
  • the exposed surface of the pressure-sensitive adhesive layer in other words, the surface opposite to the release film side of the pressure-sensitive adhesive layer
  • the substrate and the back surface obtained above Of the laminate of the antistatic layer the exposed surface of the base material (in other words, the surface opposite to the back surface antistatic layer side of the base material) was bonded.
  • a support sheet with a release film was produced, in which the back surface antistatic layer, the substrate, the pressure-sensitive adhesive layer, and the release film were laminated in this order in the thickness direction.
  • the back surface antistatic layer (thickness 170 nm), substrate (thickness 80 ⁇ m), adhesive layer (thickness 5 ⁇ m), protective film forming film (thickness 40 ⁇ m) and release film (thickness 38 ⁇ m)
  • a protective film-forming composite sheet constituted by laminating these in the thickness direction was obtained.
  • the laminate of the back surface antistatic layer, the base material and the pressure-sensitive adhesive layer (in other words, the support sheet) has a planar shape of a circle having a diameter of 270 mm, and the protective film-forming film and peeling film are formed.
  • the planar shape of the film laminate was a circle having a diameter of 210 mm, and these two circles were concentric.
  • the release film is removed, and the exposed surface of the protective film-forming film (in other words, the surface opposite to the pressure-sensitive adhesive layer side of the protective film-forming film, or the first surface) is the protective film-forming film.
  • An adhesive layer for a jig was provided in a region near the peripheral edge. Then, on the first surface of the protective film-forming film and the first surface of the jig adhesive layer, the same release film as previously removed (“SP-PET381031” manufactured by Lintec Co., Ltd., thickness: 38 ⁇ m) was used.
  • a protective film-forming composite sheet with a release film which has the configuration shown in FIG. 2 and in which the size of the protective film-forming film is slightly smaller than the size of the support sheet, was produced.
  • Table 1 shows each layer constituting the composite sheet for forming a protective film. The description of "-" in the layer column means that the composite film for forming a protective film does not have the layer.
  • the protective film forming film was expanded in the surface direction by producing a height difference in the direction of pushing up the table. Then, the exposed surface of the composite sheet for forming a protective film after the expansion opposite to the substrate side of the back surface antistatic layer (that is, the outermost layer on the side of the supporting sheet in the composite sheet for forming a protective film). The surface resistivity of was measured by the same method as above. The results are shown in the column of “Surface resistivity after expansion of composite sheet for forming protective film ( ⁇ / ⁇ )” in Table 1.
  • ⁇ Adhesion evaluation> A cross-cut having a width of 2 mm is cross-cut on the surface of the antistatic layer, and an adhesive tape (cellophane tape (registered trademark) manufactured by Nichiban Co., Ltd.) is attached to the surface of the cross-cut cross-cut antistatic layer.
  • a cellotape (registered trademark) peeling test was performed in accordance with the cross-cut tape method of K 5600-5-6 (cross-cut method), and the adhesion of the antistatic layer was evaluated according to the following criteria. The results obtained are shown in Table 1.
  • ⁇ There is no antistatic layer peeled from the substrate and transferred to the adhesive tape (0/25).
  • X There is an antistatic layer that peels off from the substrate and is transferred to the adhesive tape (1/25 or more).
  • the scratch resistance of the backside antistatic layer in the support sheet obtained above was evaluated by the following method. That is, a plane wear tester “PA-2A” manufactured by Daiei Kagaku Seiki Seisakusho was used, and a flannel cloth was covered on the pressing surface of the head therein. The pressing surface was flat and had an area of 2 cm ⁇ 2 cm. As the flannel cloth, one having a thickness within the range described above was used.
  • the pressing surface of the head covered with this flannel cloth was pressed against the surface of the back surface antistatic layer, and in this state, a load of 125 g/cm 2 was applied to the back surface antistatic layer by the head and the head was pressed at 10 cm.
  • the backside antistatic layer was rubbed while applying a load of 125 g/cm 2 through the flannel cloth by reciprocating 10 times at a linear distance. Then, of this rubbed surface of the backside antistatic layer, a region having an area of 2 cm ⁇ 2 cm was visually observed, and when no scratch was observed, it was determined as “A”, and when a scratch was observed, “A” was determined. It was judged as "B” to evaluate the scratch resistance of the antistatic layer. The results are shown in the column of "Abrasion resistance of antistatic layer or substrate" in Table 1.
  • the manufacturing method (2) was adopted to manufacture a semiconductor chip with a protective film.
  • a semiconductor chip with a protective film was manufactured by performing the pasting step, the modified layer forming step, the divided laminated body manufacturing step, the protective film forming step, and the pickup step in this order. More detailed conditions of each step are as follows.
  • an 8-inch silicon mirror wafer (thickness: 350 ⁇ m) was used as a semiconductor wafer, and the mirror surface (back surface) was protected by a protective film forming film heated at 70° C. for 1 minute.
  • the composite sheet for film formation was attached and attached to an 8-inch ring frame.
  • a laser saw (Disco, DFF7361) is used to irradiate the silicon wafer with laser light having a wavelength of 1342 nm from the grinding surface side, so that the silicon wafer has a chip size of 5 mm.
  • the modified layer was formed to have a size of 5 mm.
  • the step of producing the already-divided laminate in an expander (manufactured by DISCO, DDS2300), under a condition of a temperature of 23° C., while being placed on a table, a push-up speed of 10 mm/sec and a push-up height of 20 mm are set.
  • the protective film-forming film was expanded in the surface direction to separate the silicon wafer into chips of 5 mm ⁇ 5 mm, and the thermosetting protective film-forming film was cut.
  • the protective film forming film was thermally cured at 130° C. for 2 hours.
  • a pick-up die bonding apparatus (“BESTEM D-02” manufactured by Canon Machinery Co., Ltd.) is used, and at room temperature, a divided laminate after thermosetting (hereinafter abbreviated as “first laminate”).
  • first laminate a divided laminate after thermosetting
  • the height difference of 3 mm was newly generated between the first laminated body and the ring frame fixing the first laminated body.
  • a force is applied from the back side antistatic layer side to the first laminated body to push up the silicon layer (a semiconductor chip with a protective film) having a protective film after cutting on the back surface, The support sheet was separated and picked up.
  • one protrusion pin was used as the push-up portion, the push-up height was 0.6 mm, the push-up speed was 20 mm/s, and the push-up holding time was 30 ms. ..
  • a silicon chip having a size of 5 mm ⁇ 5 mm and a thickness of 350 ⁇ m was obtained as a semiconductor chip.
  • the size of the protective film provided on the back surface was equal to the size of this semiconductor chip.
  • the substrate has a plurality of electrodes along the sides in regions near the peripheral portions of the four sides of the circuit surface.
  • the semiconductor chip with a protective film is arranged in the central portion of the circuit surface of the substrate, and the semiconductor chip with a protective film is positioned between the electrodes arranged along the peripheral portions of the two opposite sides of the substrate.
  • a tester is provided on both the one electrode arranged along one of the two opposite sides of the substrate and the one electrode arranged along the remaining one side.
  • Each of the terminals of "Card HiTester 3244-60" manufactured by Hioki Electric Co., Ltd.) was brought into contact with each other, and in this state, a continuity test by the tester was conducted. Furthermore, another combination was sequentially selected as the two electrodes facing each other, and this continuity test was repeated.
  • Example 2 Protection was carried out in the same manner as in Example 1 except that the coating amount of the antistatic composition (VI-1)-2 was changed and the thickness of the backside antistatic layer was changed to 170 nm instead of 50 nm.
  • a composite sheet for film formation was manufactured and evaluated, and a semiconductor chip was manufactured and evaluated.
  • the composite sheet for forming a protective film produced in this example includes a back surface antistatic layer (thickness: 50 nm), a base material (thickness: 80 ⁇ m), an adhesive layer (thickness: 5 ⁇ m), a protective film forming film (thickness: 40 ⁇ m).
  • Example 3 On the substrate, the antistatic composition (VI-1)-1 was used in place of the antistatic composition (VI-1)-2, and the coating amount was changed, followed by drying at 100° C. for 2 minutes.
  • a composite sheet for forming a protective film was manufactured and evaluated in the same manner as in Example 1 except that a backside antistatic layer having a thickness of 75 nm was formed on, and a semiconductor chip was manufactured and evaluated.
  • the composite sheet for forming a protective film produced in this example has a back surface antistatic layer (thickness: 75 nm), a base material (thickness: 80 ⁇ m), an adhesive layer (thickness: 5 ⁇ m), a protective film forming film (thickness: 40 ⁇ m).
  • Example 4 ⁇ Production of composite sheet for forming protective film>> ⁇ Production of antistatic substrate>
  • a composition containing a polyurethane acrylate and a photopolymerization initiator, and the ratio of the content of the photopolymerization initiator to the content of the polyurethane acrylate is 3% by mass a phosphonium-based ionic liquid (phosphonium salt) as an antistatic agent is used.
  • phosphonium salt phosphonium salt
  • the antistatic composition (VI-2) the ratio of the content of the antistatic agent to the total content of the antistatic agent and the polyurethane acrylate was 3% by mass.
  • the antistatic composition (VI-2) obtained above was applied onto a process film made of polyethylene terephthalate (“Lumirror T60 PET 50 T-60 Toure” manufactured by Toray Industries, thickness 50 ⁇ m) by a fountain die method.
  • the coating was applied to form a coating film having a thickness of 80 ⁇ m.
  • ECS-401GX ultraviolet irradiation device
  • H04-L41 high-pressure mercury lamp
  • the coating film was irradiated with ultraviolet rays at an output of 120 mW/cm), an illuminance of a light beam having a wavelength of 365 nm of 271 mW/cm 2 , and a light amount of 175 mJ/cm 2 . Then, a release film (“SP-PET3801” manufactured by Lintec Co., Ltd., thickness: 38 ⁇ m) was used, and the release-treated surface was attached to the coating film after the ultraviolet irradiation.
  • SP-PET3801 manufactured by Lintec Co., Ltd., thickness: 38 ⁇ m
  • the lamp height is 150 mm
  • the illuminance of a light beam having a wavelength of 365 nm is 271 mW/cm 2
  • the light amount is 600 mJ/cm 2
  • the coating film (more specifically, the polyurethane acrylate) was ultraviolet-cured by irradiating the coating film with ultraviolet rays twice.
  • the process film and the release film were removed from the coating film after UV curing to obtain an antistatic substrate containing polyurethane acrylate and a phosphonium ionic liquid and having a thickness of 80 ⁇ m.
  • the ratio of the content of the antistatic agent to the total content of the antistatic agent and the polyurethane acrylate was 9% by mass. This numerical value is shown in the column of "antistatic agent (content ratio (mass %))" in Table 1.
  • a non-energy ray-curable pressure-sensitive adhesive layer having a thickness of 5 ⁇ m was formed on the release-treated surface of the release film (“SP-PET381031” manufactured by Lintec Co., Ltd., thickness: 38 ⁇ m). Then, in the laminate of the release film and the pressure-sensitive adhesive layer, the exposed surface of the pressure-sensitive adhesive layer (in other words, the surface of the pressure-sensitive adhesive layer opposite to the release film side) and the antistatic group obtained above. The one surface of the material was bonded to the other surface. As a result, a support sheet with a release film was produced in which the antistatic substrate, the pressure-sensitive adhesive layer, and the release film were laminated in this order in the thickness direction.
  • the laminate of the antistatic substrate and the pressure-sensitive adhesive layer (in other words, the support sheet) has a planar shape of a circle having a diameter of 270 mm.
  • the plane shape of the laminate of the release film and the release film is a circle having a diameter of 210 mm, and these two circles are concentric.
  • the composite film for forming a protective film with the release film has the structure shown in FIG. 7, and the size of the protective film forming film is slightly smaller than the size of the supporting sheet.
  • a protective film-forming composite sheet was produced and evaluated in the same manner as in Example 1 except that the backside antistatic layer was not formed, and a semiconductor chip was produced and evaluated.
  • the protective film-forming composite sheet produced in this comparative example had a substrate (thickness 80 ⁇ m), an adhesive layer (thickness 5 ⁇ m), a protective film-forming film (thickness 40 ⁇ m) and a release film (thickness 38 ⁇ m).
  • a composite sheet for protective film formation which is formed by stacking these layers in this order in the thickness direction and further includes an adhesive layer for jigs, and does not have a back surface antistatic layer in FIG.
  • a protective film-forming composite sheet with a release film wherein the size of the film-forming film is slightly smaller than the size of the support sheet.
  • the surface resistivity of the composite sheet for forming a protective film was measured on the base material, and the scratch resistance was evaluated on the base material. The results are shown in Table 1.
  • the antistatic composition (VI-1)-2 was replaced with the antistatic composition (VI-1)-3, the coating amount was changed, and the backside antistatic layer having a thickness of 2 ⁇ m was formed on the substrate.
  • a composite sheet for forming a protective film was manufactured and evaluated, and a semiconductor chip was manufactured and evaluated by the same method as in Example 1 except that the above was formed.
  • the composite sheet for forming a protective film produced in this comparative example has a back surface antistatic layer (thickness 2 ⁇ m), a substrate (thickness 80 ⁇ m), an adhesive layer (thickness 5 ⁇ m), a protective film forming film (thickness 40 ⁇ m).
  • the surface resistivity of the antistatic layer or the antistatic substrate was 2 before the protective film-forming composite sheet was expanded.
  • These protective film-forming composite sheets are normally expanded from the protective film-forming composite sheet.
  • the film was excellent in antistatic property after the heat treatment and after heat-curing the protective film-forming film.
  • the circuit was not destroyed in the semiconductor chip obtained by using these protective film forming composite sheets.
  • the total light transmittance of the support sheet in the protective film-forming composite sheets of Examples 1 to 4 was 80% or more (80 to 91%), and these composite sheets had favorable optical characteristics.
  • Both the antistatic layer in the composite sheet for forming a protective film of Examples 1 to 3 and the antistatic substrate in the composite sheet for forming a protective film of Example 4 have high scratch resistance.
  • the inspectability of the protective film-forming film was good.
  • the exposed surface of the antistatic layer opposite to the base material side (that is, the protective sheet-forming composite sheet in the protective film-forming composite sheet) was exposed.
  • the surface resistivity of the surface layer is, prior to expanding the protective film forming composite sheet, 5.0 ⁇ 10 15 ⁇ / ⁇ and is, after expanding the protective film forming composite sheet 5.0 ⁇ 10 15 ⁇ / ⁇ , and was 5.0 ⁇ 10 15 ⁇ / ⁇ after the protective film-forming film was heat-cured.
  • the circuit was destroyed.
  • the composite sheet for forming a protective film is expanded due to its low antistatic property after expanding the composite sheet for forming a protective film and after thermosetting the film for forming a protective film. At that time, and when the semiconductor chip was separated from the support sheet and picked up, the effect of suppressing the charging of the circuit in the semiconductor chip was low.
  • the surface resistance of the exposed surface of the antistatic layer opposite to the base material side (that is, the outermost surface layer on the supporting sheet side in the protective film-forming composite sheet).
  • the ratio is 2.8 ⁇ 10 10 ⁇ / ⁇ before expanding the protective film-forming composite sheet, and 4.2 ⁇ 10 14 ⁇ / ⁇ after expanding the protective film-forming composite sheet, After heat-curing the protective film-forming film, it was 2.9 ⁇ 10 10 ⁇ / ⁇ .
  • the circuit was destroyed in the semiconductor chip obtained by using this protective film-forming composite sheet.
  • the present invention can be used for manufacturing semiconductor devices.
  • Test piece 1a Surface of the outermost layer (exposed surface) on the side opposite to the support sheet side of the test piece 101, 102, 103, 104, 105, 201, 202, 203, 204, 205 , 301... Protective film forming composite sheet 10, 20, 30, 40, 50... Support sheet 10a, 20a, 30a, 40a, 50a... First surface of support sheet 11... Base material 11a ... First surface of base material 11b... Second surface of base material 11'... Antistatic base material 12... Adhesive layer 13, 23... Protective film forming film 130... -Protective film forming film after cutting 13'... Protective film 130'... Protective film after cutting 15... Peeling film 17... Back surface antistatic layer 18... Intermediate layer 19... Surface antistatic layer 20... Modified layer 9... Semiconductor wafer 9b... Semiconductor wafer back surface 9'... Semiconductor chip

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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Abstract

La présente invention concerne une feuille composite formant un film de protection comprenant : une feuille de support ; et un film formant un film de protection, formé sur une surface de la feuille de support. La résistivité en surface de la couche la plus à l'extérieur du côté feuille de support de la feuille composite formant un film de protection, après expansion du film formant un film de protection dans une direction de surface dans des conditions où la vitesse de poussée est de 10 mm/sec et la hauteur de poussée est de 20 mm, et dans un environnement ayant une température de 23 °C, est inférieure ou égale à 1,0 × 1011 Ω/□.
PCT/JP2019/046354 2018-12-05 2019-11-27 Feuille composite formant un film de protection et procédé de fabrication de puce semi-conductrice WO2020116275A1 (fr)

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JP2017119749A (ja) * 2015-12-28 2017-07-06 日東電工株式会社 透明導電性フィルム用保護フィルム及び積層体
WO2017188216A1 (fr) * 2016-04-28 2017-11-02 リンテック株式会社 Film destiné à la formation d'un revêtement protecteur et feuille composite destinée à la formation d'un revêtement protecteur

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