WO2020114015A1 - 补偿装置、显示屏、显示装置和补偿方法 - Google Patents

补偿装置、显示屏、显示装置和补偿方法 Download PDF

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Publication number
WO2020114015A1
WO2020114015A1 PCT/CN2019/102829 CN2019102829W WO2020114015A1 WO 2020114015 A1 WO2020114015 A1 WO 2020114015A1 CN 2019102829 W CN2019102829 W CN 2019102829W WO 2020114015 A1 WO2020114015 A1 WO 2020114015A1
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Prior art keywords
resistance
amount
driving
drift
voltage signal
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PCT/CN2019/102829
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English (en)
French (fr)
Inventor
张娜
张斌
王静
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京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Priority to US16/756,929 priority Critical patent/US11341877B2/en
Publication of WO2020114015A1 publication Critical patent/WO2020114015A1/zh

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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/006—Electronic inspection or testing of displays and display drivers, e.g. of LED or LCD displays
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0233—Improving the luminance or brightness uniformity across the screen
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/04—Maintaining the quality of display appearance
    • G09G2320/043—Preventing or counteracting the effects of ageing
    • G09G2320/045—Compensation of drifts in the characteristics of light emitting or modulating elements
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
    • G09G2330/02—Details of power systems and of start or stop of display operation
    • G09G2330/028—Generation of voltages supplied to electrode drivers in a matrix display other than LCD
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2380/00—Specific applications
    • G09G2380/02—Flexible displays

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a compensation device, a display screen, a display device, and a compensation method.
  • the flexible display technology based on LTPS can manufacture folding display screens, such as folding flexible OLED (Organic Light Emitting Diode, organic light emitting diode) display screens.
  • LTPS technology can be used to form a TFT (Thin Film Transistor, thin film transistor) on a PI (Polyimide, polyimide) substrate to form a flexible display substrate.
  • a compensation device for a display screen including: a detection circuit including a resistance sensitive member disposed in a deformation region of the display screen, the detection circuit configured to detect the resistance A resistance change amount of the sensitive member, wherein when the resistance sensitive member is deformed, the resistance of the resistance sensitive member changes; and a processor configured to obtain a drive in the deformation region according to the resistance change amount The drift amount of the characteristic curve of the transistor, and adjusts the driving voltage signal output to the driving transistor according to the drift amount.
  • the detection circuit includes: a Huygens bridge circuit, including the resistance-sensitive element, configured to generate a bridge current when the resistance-sensitive element deforms; a current-voltage conversion circuit , Configured to convert the bridge current into an analog voltage; and an analog-to-digital conversion circuit, configured to convert the analog voltage into a digital quantity, and transmit the digital quantity to the processor, wherein , The digital quantity represents the resistance change amount.
  • the Huygens bridge circuit further includes a first resistor, a second resistor, and a third resistor; wherein, the first end of the first resistor, the second resistor The first end of the power supply is electrically connected to one end of the power supply; the first end of the third resistor, one end of the resistance sensitive member and the other end of the power supply are electrically connected; the second end of the first resistor, The second end of the second resistor, the second end of the third resistor, and the other end of the resistance sensor are electrically connected, and are electrically connected to the input end of the current-voltage conversion circuit.
  • the processor is configured to obtain the degree of bending of the deformation region according to the resistance change amount, and obtain the amount of drift of the characteristic curve of the driving transistor in the deformation region according to the degree of bending.
  • the processor is configured to adjust the voltage value or the duty cycle of the driving voltage signal output to the driving transistor according to the drift amount.
  • the processor is configured to determine whether the drift amount of the characteristic curve is greater than a threshold, and in the case where the drift amount is greater than the threshold, adjust the voltage value of the driving voltage signal according to the drift amount Or duty cycle.
  • the processor is configured to obtain a change in the driving current flowing from the driving transistor according to the drift amount, and increase the driving voltage signal when the driving current decreases The voltage value or duty ratio, and when the drive current increases, the voltage value or duty ratio of the drive voltage signal is reduced.
  • the processor is further configured to determine the number of times the deformation zone is bent according to the number of times the resistance change occurs, and obtain the characteristic curve according to the degree of bending and the number of times The amount of drift.
  • the resistance sensitive member includes a piezoelectric thin film structure layer or a piezoresistive material layer.
  • the resistance-sensitive member includes a first electrode layer, a second electrode layer, a first optically transparent adhesive layer, a second optically transparent adhesive layer, and a piezoelectric film layer, wherein the first An optically transparent adhesive layer and the second optically transparent adhesive layer are between the first electrode layer and the second electrode layer, and the piezoelectric thin film layer is bonded to the first optically transparent layer Between the agent layer and the second optically transparent adhesive layer.
  • a display screen including: the aforementioned compensation device.
  • the display screen is a folding display screen
  • the deformation area includes a folding area
  • a display device including: the display screen as described above.
  • a compensation method for a display screen including: detecting a resistance change amount of a resistance sensitive member provided in a deformation region of the display screen, wherein the occurrence of the resistance sensitive member During deformation, the resistance of the resistance-sensitive member changes; the drift amount of the characteristic curve of the driving transistor in the deformation region is obtained according to the resistance change amount; and the drive output to the driving transistor is adjusted according to the drift amount Voltage signal.
  • the step of detecting the amount of resistance change of the resistance-sensitive component includes: generating a bridge current under the condition that the resistance-sensitive component is deformed by using a Huygens bridge circuit; converting the bridge current into an analog A voltage quantity; and converting the analog voltage quantity into a digital quantity, wherein the digital quantity represents the resistance change quantity.
  • the step of obtaining the drift of the characteristic curve of the driving transistor in the deformation region according to the resistance change includes: obtaining the degree of bending of the deformation region according to the resistance change; and according to the The degree of bending obtains the amount of drift of the characteristic curve of the driving transistor in the deformation region.
  • the step of adjusting the driving voltage signal output to the driving transistor according to the drift amount includes adjusting the voltage value or the duty ratio of the driving voltage signal output to the driving transistor according to the drift amount.
  • the step of adjusting the voltage value or duty ratio of the driving voltage signal according to the drift amount includes: determining whether the drift amount of the characteristic curve is greater than a threshold value; and when the drift amount is greater than the threshold value Next, the voltage value or the duty ratio of the driving voltage signal is adjusted according to the drift amount.
  • the step of adjusting the voltage value or the duty ratio of the driving voltage signal according to the drift amount includes: obtaining the variation of the driving current flowing from the driving transistor according to the drift amount; When the driving current is reduced, the voltage value or duty ratio of the driving voltage signal is increased; and when the driving current is increased, the voltage value or duty ratio of the driving voltage signal is reduced.
  • the step of obtaining the drift of the characteristic curve of the driving transistor in the deformation region according to the resistance change includes: obtaining the degree of bending of the deformation region according to the resistance change, and according to the The number of times the resistance change amount occurs determines the number of times the deformation zone is bent; and the amount of drift of the characteristic curve of the driving transistor in the deformation zone is obtained according to the degree of bending and the number of times.
  • FIG. 1A is a schematic cross-sectional view showing the structure of a thin film transistor according to an embodiment
  • FIG. 1B is a schematic cross-sectional view illustrating a thin film transistor under compressive stress according to an embodiment
  • 1C is a schematic cross-sectional view showing a thin film transistor under tensile stress according to an embodiment
  • FIG. 2 is a connection diagram illustrating a compensation device for a display screen according to an embodiment of the present disclosure
  • 3A is a top view showing a folding display screen according to an embodiment of the present disclosure.
  • FIG. 3B is a schematic cross-sectional view showing a structure of a folding display screen taken along line A-A' in FIG. 3A according to an embodiment of the present disclosure
  • FIG. 4 is a connection diagram illustrating a compensation device for a display screen according to another embodiment of the present disclosure.
  • FIG. 5 is a characteristic diagram illustrating a driving transistor according to an embodiment of the present disclosure
  • FIG. 6 is a schematic cross-sectional view showing the structure of a resistance-sensitive member according to an embodiment of the present disclosure
  • FIG. 7 is a flowchart illustrating a compensation method for a display screen according to an embodiment of the present disclosure.
  • first”, “second” and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different parts. Similar words such as “include” or “include” mean that the elements before the word cover the elements listed after the word, and do not exclude the possibility of covering other elements. “Up”, “down”, “left”, “right”, etc. are only used to indicate the relative positional relationship. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
  • a specific device when it is described that a specific device is located between the first device and the second device, there may or may not be an intervening device between the specific device and the first device or the second device.
  • the specific device When it is described that a specific device is connected to another device, the specific device may be directly connected to the other device without an intervening device, or may be directly connected to the other device without an intervening device.
  • the inventor of the present disclosure discovered that during the process of repeated bending or folding of certain display screens (for example, folding display screens), due to the presence of mechanical stress, the characteristics of the TFT may drift, resulting in changes in the brightness, making the display screen The problem of uneven light emission in the deformed area (such as the folded area) occurs during display.
  • FIG. 1A is a schematic cross-sectional view showing the structure of a thin film transistor according to an embodiment.
  • the thin film transistor includes a substrate (for example, a PI substrate) 101, a semiconductor layer 102 on the substrate 101, a source 104 and a drain 105 on the semiconductor layer 102, and a source 104 and a drain
  • the thin film transistor is a top-gate TFT structure.
  • FIG. 1B is a schematic cross-sectional view illustrating a thin film transistor under compressive stress according to an embodiment.
  • FIG. 1C is a schematic cross-sectional view illustrating a thin film transistor under tensile stress according to an embodiment.
  • thin film transistors will produce different stress states due to different bending directions. For example, as shown in FIG. 1B, the thin film transistor bends toward the gate side under the action of compressive stress. For another example, as shown in FIG. 1C, the thin film transistor bends toward the side of the substrate under the action of tensile stress.
  • TFT characteristics for example, current-voltage characteristics (IV characteristics) of transistors
  • IV characteristics current-voltage characteristics
  • the threshold voltage V th of the transistor becomes larger and the mobility becomes smaller, resulting in a smaller current (for example, source-drain current I DS ).
  • the threshold voltage V th of the transistor will become smaller, and the mobility will become larger, resulting in a larger current.
  • the drift is a process of gradually drifting as the number of bending increases.
  • a thin film transistor can be applied as a driving transistor in a TFT pixel circuit.
  • TFT pixel circuits There are various schemes for the design of TFT pixel circuits, and the basic calculation formula is as follows:
  • I DS is the drive current (that is, source-drain current) output by the drive transistor to drive the OLED to emit light
  • ⁇ is the effective carrier mobility
  • C OX is the capacitance of the drive transistor
  • W/L is the aspect ratio of the drive transistor
  • V gs is the gate-source voltage of the driving transistor
  • V th is the threshold voltage of the driving transistor.
  • the folding display screen has a deformation area, for example, the deformation area is a folding area.
  • the driving transistor in the folding area will change its threshold voltage and mobility due to folding and bending, which affects the driving current, which may cause different OLEDs to emit different brightness, which may cause uneven light emission in the deformation area during display .
  • the embodiments of the present disclosure provide a compensation device for a display screen to compensate for the light emission brightness, so that the light emission in the deformation area is more uniform.
  • the compensation device according to some embodiments of the present disclosure will be described in detail below with reference to the drawings.
  • the compensation device can be used to fold the display screen.
  • the compensation device may include a detection circuit 220 and a processor 240.
  • the detection circuit 220 may include a resistance sensitive member (not shown in FIG. 1A) disposed in a deformation area (eg, folding area) of the display screen. When the resistance-sensitive member deforms (for example, bends), the resistance of the resistance-sensitive member changes. The detection circuit 220 is configured to detect the resistance change amount of the resistance-sensitive element. The detection circuit 220 transmits the resistance change amount to the processor 240.
  • a resistance sensitive member not shown in FIG. 1A
  • the detection circuit 220 transmits the resistance change amount to the processor 240.
  • the processor 240 is configured to obtain the drift amount of the characteristic curve (eg, IV characteristic curve) of the driving transistor in the deformation region according to the resistance change amount, and adjust the driving voltage signal output to the driving transistor according to the drift amount.
  • the characteristic curve eg, IV characteristic curve
  • a compensation device according to some embodiments of the present disclosure is provided.
  • the detection circuit detects the resistance change amount of the resistance sensitive member in the deformation area and transmits the resistance change amount to the processor.
  • the processor obtains the drift amount of the characteristic curve of the driving transistor in the deformation region according to the resistance change amount, and adjusts the driving voltage signal output to the driving transistor according to the drift amount. By adjusting the driving voltage signal, the brightness compensation of the deformation area can be achieved, so that the light emission of the deformation area is more uniform.
  • the processor 240 may be configured to obtain the bending degree of the deformation region according to the resistance change amount, and obtain the drift amount of the characteristic curve of the driving transistor in the deformation region according to the bending degree.
  • the degree of curvature of the deformation region may also mean the degree of curvature of the driving transistor in the deformation region.
  • the processor may pre-store a correspondence table between the degree of bending and the amount of drift. After obtaining the bending degree of the deformation zone, the processor queries the corresponding relationship table to obtain the corresponding drift amount.
  • the processor 240 may be configured to adjust the voltage value or duty cycle of the driving voltage signal output to the driving transistor according to the amount of drift.
  • the gate-source voltage of the driving transistor can be adjusted, thereby adjusting the light-emission brightness of the pixels in the deformation region. This can achieve brightness compensation in the deformation zone, so that the light emission in the deformation zone is more uniform.
  • the light-emitting time of the pixels in the deformation region can be adjusted. Since the human eye's perception of brightness is an integral of the brightness over a period of time, at a fixed brightness, the longer the light-emitting time, the brighter the human eye feels. Therefore, adjusting the light-emitting time of the pixel is also equivalent to adjusting the light-emitting brightness of the pixel, thereby achieving brightness compensation in the deformation region.
  • the frequency of the driving voltage signal can be made higher (for example, above 200 Hz), so that the human eye can be prevented from perceiving the flicker phenomenon.
  • the processor 240 may be configured to determine whether the drift amount of the characteristic curve of the driving transistor is greater than a threshold value (or referred to as a drift amount threshold value), and when the drift amount is greater than the threshold value, adjust according to the drift amount The voltage value or duty ratio of the driving voltage signal.
  • the threshold may range from 0.001V to 0.01V.
  • the threshold may be 0.003V.
  • the threshold can be determined according to actual needs.
  • the degree of bending of the deformation region is not large, resulting in a small amount of drift in the characteristic curve of the driving transistor.
  • the drift amount does not exceed the threshold.
  • the drift of the emission luminance is not large, so the voltage value or the duty ratio of the driving voltage signal may not be adjusted.
  • the brightness compensation can be achieved by adjusting the voltage value or the duty ratio of the driving voltage signal.
  • the processor 240 may be configured to obtain the change (eg, increase or decrease) of the driving current flowing from the driving transistor according to the drift amount of the characteristic curve of the driving transistor.
  • the processor may pre-store the correspondence between the drift amount of the characteristic curve and the change of the driving current.
  • different drift amounts may correspond to different increases or decreases in drive current.
  • the processor 240 can obtain the change of the driving current according to the drift amount of the characteristic curve of the driving transistor.
  • the processor 240 is further configured to increase the voltage value or duty cycle of the driving voltage signal when the driving current decreases, and decrease the voltage value or duty of the driving voltage signal when the driving current increases Air ratio.
  • the processor can obtain the variation of the driving current that drives the light emitting device (eg, OLED) to emit light according to the drift amount of the characteristic curve.
  • the driving current that drives the light emitting device (eg, OLED) to emit light according to the drift amount of the characteristic curve.
  • the processor can obtain the variation of the driving current that drives the light emitting device (eg, OLED) to emit light according to the drift amount of the characteristic curve.
  • the voltage value or duty ratio of the driving voltage signal when the driving current is reduced it is possible to increase the luminous brightness when the luminous brightness of the light emitting device of the deformation region is reduced.
  • By reducing the voltage value or the duty ratio of the driving voltage signal when the driving current is increased it is possible to reduce the light emitting luminance when the light emitting luminance of the light emitting device in the deformation region increases. This can achieve uniform light emission throughout the deformation zone.
  • the processor 240 may be further configured to determine the number of times the deformation zone is bent according to the number of times the resistance change occurs, and obtain the drift of the characteristic curve according to the degree of bending of the deformation zone and the number of times the amount.
  • the drift of the characteristic curve of the driving transistor may be related not only to the bending degree of the deformation region, but also to the bending number of the deformation region.
  • the drift of the characteristic curve is a process of gradually drifting with the increase of the number of bending. Therefore, in this embodiment, the processor can record the number of bending times of the deformation area according to the number of occurrences of the resistance change amount (ie, the number of resistance change). For example, the resistance of the resistance sensitive element changes once, and the processor records the deformation zone (or the driving transistor of the deformation zone) bending once.
  • the processor may pre-store a correspondence table between the degree of bending, the number of bending times and the drift of the characteristic curve. After obtaining the bending degree and the number of bending times of the deformation zone, the processor obtains the drift amount of the characteristic curve by querying the table.
  • FIG. 3A is a top view showing a folding display screen according to an embodiment of the present disclosure.
  • the folding display screen includes a deformation area (for example, a folding area) 310 and rigid body areas 320 on both sides of the deformation area 310.
  • the aforementioned resistance-sensitive member is disposed in the structural layer of the deformation region.
  • FIG. 3B is a schematic cross-sectional view showing a structure of a folding display screen taken along line A-A' in FIG. 3A according to an embodiment of the present disclosure.
  • the folding display screen includes a display panel 331, a resistance sensitive member 332 on the display panel 331, and other structural layers 333 covering the resistance sensitive member 332.
  • the other structural layer 333 includes a touch layer and the like.
  • the resistance-sensitive element 332 is located at the deformation region 310. When the deformation zone is bent or folded, the resistance-sensitive member bends. The resistance sensor 332 changes its resistance due to the change of the compressive stress or tensile stress when it is bent.
  • the compensation device may include a detection circuit 220 and a processor 240.
  • the driving transistor 260 is also shown in FIG. 4.
  • the detection circuit 220 may include a Huygens bridge circuit 221, a current-voltage conversion circuit (abbreviated as I/V conversion circuit) 222, and an analog-to-digital conversion circuit 223.
  • the Huygens bridge circuit 221 may include a resistance-sensitive member 332.
  • the Huygens bridge circuit 221 is configured to generate a bridge current I when the resistance sensitive element 332 is deformed. Furthermore, the Huygens bridge circuit 221 transmits the bridge current I to the current-voltage conversion circuit 222.
  • the Huygens bridge circuit 221 may further include a first resistor R1, a second resistor R2, and a third resistor R3.
  • the first end of the first resistor R1, the first end of the second resistor R2, and one end (eg, the negative terminal) of the power supply 2211 are electrically connected.
  • the first end of the third resistor R3, one end of the resistance sensitive member 332, and the other end (eg, positive terminal) of the power supply 2211 are electrically connected.
  • the second end of the first resistor R1, the second end of the second resistor R2, the second end of the third resistor R3 and the other end of the resistance sensor 332 are electrically connected and converted with the current voltage
  • the input terminal of the circuit 222 is electrically connected.
  • the resistances of the first resistor R1, the second resistor R2, and the third resistor R3 are all known resistances.
  • the resistance-sensitive member bends, the resistance of the resistance-sensitive member changes, and the balance of the Huygens bridge circuit is broken, so that a current I is generated. And the current I is transmitted to the input terminal of the current-voltage conversion circuit 222.
  • the power supply 2211 may be provided as an external power supply outside the Huygens bridge circuit, or as an internal power supply inside the Huygens bridge circuit.
  • the current-voltage conversion circuit 222 is configured to convert the bridge current I into an analog voltage amount. In addition, the current-voltage conversion circuit 222 transmits the analog voltage to the analog-to-digital conversion circuit 223.
  • the analog-to-digital conversion circuit 223 is configured to convert the analog voltage amount into a digital amount, and transmit the digital amount to the processor 240.
  • This digital quantity represents the amount of resistance change of the resistance sensor 332.
  • the acquisition of the resistance change amount of the resistance sensitive member is realized.
  • the processor 240 adjusts the voltage value or the duty ratio of the driving voltage signal output to the driving transistor 260 according to the resistance change amount. This realizes the compensation of the brightness of the deformation zone, so that the light emission of the deformation zone is more uniform.
  • FIG. 5 is a characteristic diagram illustrating a driving transistor according to an embodiment of the present disclosure.
  • Figure 5 shows several characteristic curves. Each characteristic curve corresponds to a driving transistor.
  • the abscissa of the characteristic curve is the gate voltage (ie, driving voltage) V G of the driving transistor, and the ordinate is the source-drain current of the driving transistor (ie, the driving current driving the light emitting device (eg, OLED) to emit light) I DS .
  • the characteristic curve may drift left or right after being bent or folded several times in the deformation zone.
  • the processor adjusts the voltage value or the duty ratio of the driving voltage signal, so that the drift characteristic curve returns to the original position, that is, the brightness compensation is realized.
  • the resistance-sensitive member includes a piezoelectric thin-film structure layer.
  • the structure of the piezoelectric thin film structure layer can refer to FIG. 6.
  • the resistance sensitive member 332 may include a first electrode layer 3321, a second electrode layer 3322, a first OCA (Optically Clear Adhesive) layer 3323, a second OCA layer 3324, and a piezoelectric Thin film layer 3325.
  • the first OCA layer 3323 and the second OCA layer 3324 are between the first electrode layer 3321 and the second electrode layer 3322.
  • the piezoelectric thin film layer 3325 is between the first OCA layer 3323 and the second OCA layer 3324.
  • the material of the first electrode layer 3321 and the second electrode layer 3322 may be ITO (Indium Tin Oxide).
  • the first electrode layer 3321 may serve as one end of the resistance-sensitive member
  • the second electrode layer 3322 may serve as the other end of the resistance-sensitive member.
  • the resistance sensitive element adopts the form of a piezoelectric thin film structure layer.
  • the piezoelectric thin film structure layer When the piezoelectric thin film structure layer is bent, its resistance will change. For example, the greater the degree of bending of the piezoelectric thin-film structure layer, the greater the stress it bears, and the more obvious the corresponding piezoelectric effect. In this case, the resistance of the piezoelectric thin-film structure layer changes accordingly.
  • the proportional relationship between the resistance change amount and the bending degree can be determined by the actually measured bending degree-resistance change curve.
  • the resistance sensitive member may include a layer of piezoresistive material.
  • the material of the piezoresistive material layer is a composite material with piezoresistive properties, which mainly includes resin and metalized fibers dispersed in the resin. When the layer of piezoresistive material bends, the resistance of the layer of piezoresistive material changes.
  • a display screen is also provided.
  • the display screen may include a compensation device as described above (for example, the compensation device shown in FIG. 2 or FIG. 4).
  • the display screen may be a folding display screen, and the deformation area may include a folding area.
  • a display device may include a display screen as described above (eg, a folding display screen).
  • the display device may be any product or component with a display function such as a display, a mobile phone, a tablet computer, a notebook computer, a television or a navigator.
  • the compensation method may include steps S702 to S706.
  • step S702 the resistance change amount of the resistance sensitive member provided in the deformation area of the display screen is detected.
  • the resistance of the resistance-sensitive member changes.
  • this step S702 may include: using a Huygens bridge circuit to generate a bridge current when the resistance-sensitive component is deformed; converting the bridge current into an analog voltage; and the analog voltage Convert to digital.
  • the digital quantity represents the resistance change amount.
  • step S704 the drift amount of the characteristic curve of the driving transistor in the deformation region is obtained according to the resistance change amount.
  • this step S704 may include: obtaining the degree of bending of the deformation region according to the resistance change amount; and obtaining the amount of drift of the characteristic curve of the driving transistor in the deformation region according to the degree of bending.
  • this step S704 may include: obtaining the bending degree of the deformation zone according to the resistance change amount, and determining the number of times the deformation zone is bent according to the number of occurrences of the resistance change amount; and obtaining according to the bending degree and the number of times The drift amount of the characteristic curve of the driving transistor in this deformation region.
  • step S706 the driving voltage signal output to the driving transistor is adjusted according to the amount of drift.
  • this step S706 may include adjusting the voltage value or the duty cycle of the driving voltage signal output to the driving transistor according to the drift amount.
  • the voltage value of the driving voltage signal By adjusting the voltage value of the driving voltage signal, the gate-source voltage of the driving transistor can be adjusted, thereby adjusting the light emission brightness of the deformation region.
  • the duty ratio of the driving voltage signal By adjusting the duty ratio of the driving voltage signal, the light-emitting time of the pixels in the deformation area is adjusted. Both of these methods can achieve brightness compensation in the deformation area, so that the light emission in the deformation area is more uniform.
  • the step of adjusting the voltage value or the duty ratio of the driving voltage signal according to the drift amount may include: determining whether the drift amount of the characteristic curve is greater than the threshold value; and if the drift amount is greater than the threshold value, according to the drift amount Adjust the voltage value or duty cycle of the drive voltage signal.
  • the step of adjusting the voltage value or the duty cycle of the driving voltage signal according to the drift amount may include: obtaining a change in the driving current flowing from the driving transistor according to the drift amount; increasing when the driving current decreases The voltage value or duty ratio of the large driving voltage signal; and when the driving current increases, the voltage value or duty ratio of the driving voltage signal is reduced.
  • a compensation method for a display screen has been provided.
  • the resistance change amount of the resistance-sensitive member provided in the deformation region of the display screen is detected.
  • the drift amount of the characteristic curve of the driving transistor in the deformation region is obtained according to the resistance change amount.
  • the driving voltage signal output to the driving transistor is adjusted according to the drift amount. By adjusting the driving voltage signal, the brightness compensation in the deformation area can be achieved, so that the light emission in the deformation area is more uniform.

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Abstract

一种补偿装置、显示屏、显示装置和补偿方法，涉及显示技术领域。该补偿装置包括检测电路(220)和处理器(240)。该检测电路(220)包含设置在显示屏的形变区的电阻敏感件。在该电阻敏感件形变时，该电阻敏感件的电阻发生变化。该检测电路(220)被配置为检测该电阻敏感件的电阻变化量。该处理器(240)被配置为根据该电阻变化量获得在该形变区的驱动晶体管的特性曲线的漂移量，并根据该漂移量调整输出到该驱动晶体管的驱动电压信号。本补偿装置可以实现形变区的亮度补偿，使得形变区的发光更加均匀。

Description

补偿装置、显示屏、显示装置和补偿方法
相关申请的交叉引用
本申请是以CN申请号为201811485852.9，申请日为2018年12月6日的申请为基础，并主张其优先权，该CN申请的公开内容在此作为整体引入本申请中。
技术领域
本公开涉及显示技术领域，特别涉及一种补偿装置、显示屏、显示装置和补偿方法。
背景技术
目前，基于LTPS(Low Temperature Poly-silicon，低温多晶硅技术)技术的柔性显示技术可以制造出折叠显示屏，例如折叠式柔性OLED(Organic Light Emitting Diode，有机发光二极管)显示屏。例如，可以利用LTPS技术在PI(Polyimide，聚酰亚胺)基板上形成TFT(Thin Film Transistor，薄膜晶体管)，从而形成柔性显示基板。
发明内容
根据本公开实施例的一个方面，提供了一种用于显示屏的补偿装置，包括：检测电路，包含设置在显示屏的形变区的电阻敏感件，所述检测电路被配置为检测所述电阻敏感件的电阻变化量，其中，在所述电阻敏感件发生形变时，所述电阻敏感件的电阻发生变化；以及处理器，被配置为根据所述电阻变化量获得在所述形变区的驱动晶体管的特性曲线的漂移量，并根据所述漂移量调整输出到所述驱动晶体管的驱动电压信号。
在一些实施例中，所述检测电路包括：惠更斯电桥电路，包括所述电阻敏感件，被配置为在所述电阻敏感件发生形变的情况下，产生电桥电流；电流电压转换电路，被配置为将所述电桥电流转换成模拟电压量；以及模数转换电路，被配置为将所述模拟电压量转换成数字量，并将所述数字量传输到所述处理器，其中，所述数字量表示所述电阻变化量。
在一些实施例中，所述惠更斯电桥电路还包括第一电阻器、第二电阻器和第三电 阻器；其中，所述第一电阻器的第一端、所述第二电阻器的第一端和电源的一端电连接；所述第三电阻器的第一端、所述电阻敏感件的一端和所述电源的另一端电连接；所述第一电阻器的第二端、所述第二电阻器的第二端、所述第三电阻器的第二端和所述电阻敏感件的另一端电连接，并且与所述电流电压转换电路的输入端电连接。
在一些实施例中，所述处理器被配置为根据所述电阻变化量获得所述形变区的弯曲程度，根据所述弯曲程度获得在所述形变区的驱动晶体管的特性曲线的漂移量。
在一些实施例中，所述处理器被配置为根据所述漂移量调整输出到所述驱动晶体管的驱动电压信号的电压值或占空比。
在一些实施例中，所述处理器被配置为判断所述特性曲线的漂移量是否大于阈值，在所述漂移量大于阈值的情况下，根据所述漂移量调整所述驱动电压信号的电压值或占空比。
在一些实施例中，所述处理器被配置为根据所述漂移量获得从所述驱动晶体管流出的驱动电流的变化情况，在所述驱动电流减小的情况下增大所述驱动电压信号的电压值或占空比，以及在所述驱动电流增大的情况下减小所述驱动电压信号的电压值或占空比。
在一些实施例中，所述处理器还被配置为根据所述电阻变化量出现的次数确定所述形变区被弯折的次数，并根据所述弯曲程度和所述次数获得所述特性曲线的漂移量。
在一些实施例中，所述电阻敏感件包括压电薄膜结构层或压阻材料层。
在一些实施例中，所述电阻敏感件包括第一电极层、第二电极层、第一光学透明粘合剂层、第二光学透明粘合剂层和压电薄膜层，其中，所述第一光学透明粘合剂层和所述第二光学透明粘合剂层在所述第一电极层与所述第二电极层之间，所述压电薄膜层在所述第一光学透明粘合剂层和所述第二光学透明粘合剂层之间。
根据本公开实施例的另一个方面，提供了一种显示屏，包括：如前所述的补偿装置。
在一些实施例中，所述显示屏为折叠显示屏，所述形变区包括折叠区。
根据本公开实施例的另一个方面，提供了一种显示装置，包括：如前所述的显示屏。
根据本公开实施例的另一个方面，提供了一种用于显示屏的补偿方法，包括：检测设置在显示屏的形变区的电阻敏感件的电阻变化量，其中，在所述电阻敏感件发生形变时，所述电阻敏感件的电阻发生变化；根据所述电阻变化量获得在所述形变区的 驱动晶体管的特性曲线的漂移量；以及根据所述漂移量调整输出到所述驱动晶体管的驱动电压信号。
在一些实施例中，检测所述电阻敏感件的电阻变化量的步骤包括：利用惠更斯电桥电路在电阻敏感件发生形变的情况下产生电桥电流；将所述电桥电流转换成模拟电压量；以及将所述模拟电压量转换成数字量，其中，所述数字量表示所述电阻变化量。
在一些实施例中，根据所述电阻变化量获得在所述形变区的驱动晶体管的特性曲线的漂移量的步骤包括：根据所述电阻变化量获得所述形变区的弯曲程度；以及根据所述弯曲程度获得在所述形变区的驱动晶体管的特性曲线的漂移量。
在一些实施例中，根据所述漂移量调整输出到所述驱动晶体管的驱动电压信号的步骤包括：根据所述漂移量调整输出到所述驱动晶体管的驱动电压信号的电压值或占空比。
在一些实施例中，根据所述漂移量调整所述驱动电压信号的电压值或占空比的步骤包括：判断所述特性曲线的漂移量是否大于阈值；以及在所述漂移量大于阈值的情况下，根据所述漂移量调整所述驱动电压信号的电压值或占空比。
在一些实施例中，根据所述漂移量调整所述驱动电压信号的电压值或占空比的步骤包括：根据所述漂移量获得从所述驱动晶体管流出的驱动电流的变化情况；在所述驱动电流减小的情况下增大所述驱动电压信号的电压值或占空比；以及在所述驱动电流增大的情况下减小所述驱动电压信号的电压值或占空比。
在一些实施例中，根据所述电阻变化量获得在所述形变区的驱动晶体管的特性曲线的漂移量的步骤包括：根据所述电阻变化量获得所述形变区的弯曲程度，并根据所述电阻变化量出现的次数确定所述形变区被弯折的次数；以及根据所述弯曲程度和所述次数获得在所述形变区的驱动晶体管的特性曲线的漂移量。
通过以下参照附图对本公开的示例性实施例的详细描述，本公开的其它特征及其优点将会变得清楚。
附图说明
构成说明书的一部分的附图描述了本公开的实施例，并且连同说明书一起用于解释本公开的原理。
参照附图，根据下面的详细描述，可以更加清楚地理解本公开，其中：
图1A是示出根据一个实施例的薄膜晶体管的结构的截面示意图；
图1B是示出根据一个实施例的薄膜晶体管在压应力作用下的截面示意图；
图1C是示出根据一个实施例的薄膜晶体管在拉应力作用下的截面示意图；
图2是示出根据本公开一个实施例的用于显示屏的补偿装置的连接图；
图3A是示出根据本公开一个实施例的折叠显示屏的顶视图；
图3B是示出根据本公开一个实施例的折叠显示屏沿着图3A中的线A-A’截取的结构的截面示意图；
图4是示出根据本公开另一个实施例的用于显示屏的补偿装置的连接图；
图5是示出根据本公开一个实施例的驱动晶体管的特性曲线图；
图6是示出根据本公开一个实施例的电阻敏感件的结构的截面示意图；
图7是示出根据本公开一个实施例的用于显示屏的补偿方法的流程图。
应当明白，附图中所示出的各个部分的尺寸并不是按照实际的比例关系绘制的。此外，相同或类似的参考标号表示相同或类似的构件。
具体实施方式
现在将参照附图来详细描述本公开的各种示例性实施例。对示例性实施例的描述仅仅是说明性的，决不作为对本公开及其应用或使用的任何限制。本公开可以以许多不同的形式实现，不限于这里所述的实施例。提供这些实施例是为了使本公开透彻且完整，并且向本领域技术人员充分表达本公开的范围。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、材料的组分、数字表达式和数值应被解释为仅仅是示例性的，而不是作为限制。
本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的部分。“包括”或者“包含”等类似的词语意指在该词前的要素涵盖在该词后列举的要素，并不排除也涵盖其他要素的可能。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
在本公开中，当描述到特定器件位于第一器件和第二器件之间时，在该特定器件与第一器件或第二器件之间可以存在居间器件，也可以不存在居间器件。当描述到特定器件连接其它器件时，该特定器件可以与所述其它器件直接连接而不具有居间器件，也可以不与所述其它器件直接连接而具有居间器件。
本公开使用的所有术语(包括技术术语或者科学术语)与本公开所属领域的普通 技术人员理解的含义相同，除非另外特别定义。还应当理解，在诸如通用字典中定义的术语应当被解释为具有与它们在相关技术的上下文中的含义相一致的含义，而不应用理想化或极度形式化的意义来解释，除非这里明确地这样定义。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
本公开的发明人发现，某些显示屏(例如折叠显示屏)在被反复弯折或折叠的过程中，由于机械应力的存在会导致TFT的特性发生漂移，从而造成亮度发生变化，使得显示屏在显示时出现形变区(例如折叠区)发光不均匀的问题。
图1A是示出根据一个实施例的薄膜晶体管的结构的截面示意图。
如图1A所示，该薄膜晶体管包括：基板(例如PI基板)101、在该基板101上的半导体层102、在该半导体层102上的源极104和漏极105、在源极104和漏极105之间的栅极绝缘层103和在该栅极绝缘层103上的栅极106。该薄膜晶体管是一个顶栅式的TFT结构。
图1B是示出根据一个实施例的薄膜晶体管在压应力作用下的截面示意图。图1C是示出根据一个实施例的薄膜晶体管在拉应力作用下的截面示意图。在实际的折叠式产品(例如折叠显示屏)中，薄膜晶体管因弯曲的方向不同，会产生不同的应力状态。例如，如图1B所示，薄膜晶体管在压应力的作用下会向栅极所在侧弯曲。又例如，如图1C所示，薄膜晶体管在拉应力的作用下会向基板所在侧弯曲。
本公开的发明人研究发现，薄膜晶体管在经受多次不同的弯曲应力后会导致TFT特性(例如晶体管的电流电压特性(IV特性))发生不同的变化。当受到压应力作用后，晶体管的阈值电压V th会变大，迁移率变小，从而导致电流(例如源漏电流I DS)变小。当受到拉应力作用后，晶体管的阈值电压V th会变小，迁移率变大，从而导致电流变大。而且该漂移是随着弯折次数的增加逐渐漂移的过程。
在显示屏的OLED显示面板中，可以将薄膜晶体管应用为TFT像素电路中的驱动晶体管。TFT像素电路的设计有多种方案，基本的计算公式如下所示：
Figure PCTCN2019102829-appb-000001
其中，I DS为驱动晶体管输出的驱动OLED发光的驱动电流(即源漏电流)，μ为有效载流子迁移率，C OX为驱动晶体管的电容，W/L为驱动晶体管的宽长比，V gs为驱动晶体管的栅源电压，V th为驱动晶体管的阈值电压。从上述公式(1)可以看出，驱动电流I DS受迁移率μ和阈值电压V th影响。
折叠显示屏存在一个形变区，例如该形变区为折叠区。而在折叠区的驱动晶体管由于折叠弯曲会造成其阈值电压和迁移率发生变化，影响驱动电流，从而造成不同OLED的发光亮度可能不同，使得显示屏在显示时可能出现形变区发光不均匀的问题。
鉴于此，本公开的实施例提供一种用于显示屏的补偿装置，以对发光亮度实现补偿，使得形变区的发光更加均匀。下面结合附图详细描述根据本公开一些实施例的补偿装置。
图2是示出根据本公开一个实施例的用于显示屏的补偿装置的连接图。例如，该补偿装置可以用于折叠显示屏。如图2所示，该补偿装置可以包括检测电路220和处理器240。
该检测电路220可以包含设置在显示屏的形变区(例如折叠区)的电阻敏感件(图1A中未示出)。在该电阻敏感件发生形变(例如弯折)时，该电阻敏感件的电阻发生变化。该检测电路220被配置为检测该电阻敏感件的电阻变化量。该检测电路220将该电阻变化量传输到该处理器240。
该处理器240被配置为根据该电阻变化量获得在该形变区的驱动晶体管的特性曲线(例如IV特性曲线)的漂移量，并根据该漂移量调整输出到该驱动晶体管的驱动电压信号。
在该实施例中，提供了根据本公开一些实施例的补偿装置。在补偿装置中，检测电路检测在形变区的电阻敏感件的电阻变化量并将该电阻变化量传输到处理器。该处理器根据该电阻变化量获得在该形变区的驱动晶体管的特性曲线的漂移量，并根据该漂移量调整输出到该驱动晶体管的驱动电压信号。通过调节驱动电压信号，从而可以实现形变区的亮度补偿，使得形变区的发光更加均匀。
在一些实施例中，该处理器240可以被配置为根据电阻变化量获得形变区的弯曲程度，并根据该弯曲程度获得在该形变区的驱动晶体管的特性曲线的漂移量。这里，形变区的弯曲程度也可以表示在该形变区的驱动晶体管的弯曲程度。
例如，处理器可以预先存储有弯曲程度与漂移量的对应关系表。处理器在获得形变区的弯曲程度后，查询该对应关系表，从而得到对应的漂移量。
在一些实施例中，该处理器240可以被配置为根据漂移量调整输出到驱动晶体管的驱动电压信号的电压值或占空比。
通过调节驱动电压信号的电压值，可以调节驱动晶体管的栅源电压，从而调节形变区的像素的发光亮度。这可以实现形变区的亮度补偿，使得形变区的发光更加均匀。
通过调节驱动电压信号的占空比，可以调节该形变区的像素的发光时间。由于人眼对亮度的感觉是一段时间内亮度的积分，因此，在固定亮度下，发光时间越长，人眼感觉到的亮度越亮。因此通过调整像素的发光时间也相当于调整了像素的发光亮度，从而实现形变区的亮度补偿。此外，在调节驱动电压信号的占空比时，可以使得该驱动电压信号的频率较高(例如在200Hz以上)，从而可以防止人眼感觉到闪烁现象。
在一些实施例中，该处理器240可以被配置为判断驱动晶体管的特性曲线的漂移量是否大于阈值(或者称为漂移量阈值)，在该漂移量大于阈值的情况下，根据该漂移量调整驱动电压信号的电压值或占空比。在一些实施例中，该阈值的范围可以是0.001V至0.01V。例如，该阈值可以为0.003V。当然，本领域技术人员可以理解，可以根据实际需要来确定该阈值。
例如，在有些情况下，形变区的弯曲程度并不大，导致驱动晶体管的特性曲线的漂移量也不大。例如该漂移量没有超过阈值。在这样的情况下，发光亮度的漂移不大，因此可以不调整驱动电压信号的电压值或占空比。但是，当形变区的弯曲程度加大，导致驱动晶体管的特性曲线的漂移量大于阈值时，就可以通过调整驱动电压信号的电压值或占空比来实现亮度补偿。
在一些实施例中，该处理器240可以被配置为根据驱动晶体管的特性曲线的漂移量获得从该驱动晶体管流出的驱动电流的变化情况(例如增大或减小)。例如，处理器可以预先存储有特性曲线的漂移量与驱动电流的变化情况的对应关系。例如，不同的漂移量可以对应于驱动电流的不同的增大量或减小量。这样，处理器240可以根据驱动晶体管的特性曲线的漂移量获得驱动电流的变化情况。该处理器240还被配置为在该驱动电流减小的情况下增大驱动电压信号的电压值或占空比，以及在该驱动电流增大的情况下减小驱动电压信号的电压值或占空比。
在该实施例中，处理器根据特性曲线的漂移量可以获得驱动发光器件(例如OLED)发光的驱动电流的变化情况。通过在驱动电流减小的情况下增大驱动电压信号的电压值或占空比，从而可以在形变区的发光器件的发光亮度减小的情况下增大发光亮度。通过在驱动电流增大的情况下减小驱动电压信号的电压值或占空比，从而可以在形变区的发光器件的发光亮度增大的情况下减小发光亮度。这样可以实现整个形变区的均匀发光。
在一些实施例中，该处理器240还可以被配置为根据所述电阻变化量出现的次数确定所述形变区被弯折的次数，并根据形变区的弯曲程度和该次数获得特性曲线的漂 移量。
例如，驱动晶体管的特性曲线的漂移除了可以与形变区的弯曲程度有关，还可以与形变区的弯折次数有关。特性曲线的漂移是随着弯折次数的增加逐渐漂移的过程。因此，在该实施例中，处理器可以根据电阻变化量出现的次数(即电阻变化次数)记录形变区的弯折次数。例如电阻敏感件的电阻变化一次，处理器记录形变区(或者说形变区的驱动晶体管)弯折一次。处理器可以预先存储有弯曲程度、弯折次数与特性曲线的漂移量的对应关系表。处理器在获得形变区的弯曲程度和弯折次数后，通过查询该表来获得特性曲线的漂移量。
图3A是示出根据本公开一个实施例的折叠显示屏的顶视图。如图3A所示，该折叠显示屏包括形变区(例如折叠区)310和在该形变区310两侧的刚体区320。前面所述的电阻敏感件设置在该形变区的结构层中。
图3B是示出根据本公开一个实施例的折叠显示屏沿着图3A中的线A-A’截取的结构的截面示意图。如图3B所示，该折叠显示屏包括显示面板331、在该显示面板331上的电阻敏感件332和覆盖该电阻敏感件332的其他结构层333。例如，该其他结构层333包括触摸层等。如图3B所示，该电阻敏感件332位于形变区310处。当形变区被弯折或折叠时，该电阻敏感件发生弯曲。该电阻敏感件332在弯曲时由于所受压应力或拉应力的变化，会导致其电阻发生变化。
图4是示出根据本公开另一个实施例的用于显示屏的补偿装置的连接图。该补偿装置可以包括检测电路220和处理器240。另外，图4中还示出了驱动晶体管260。
在一些实施例中，如图4所示，该检测电路220可以包括惠更斯电桥电路221、电流电压转换电路(简称为I/V转换电路)222和模数转换电路223。
该惠更斯电桥电路221可以包括电阻敏感件332。该惠更斯电桥电路221被配置为在该电阻敏感件332发生形变的情况下，产生电桥电流I。而且，该惠更斯电桥电路221将该电桥电流I传输到电流电压转换电路222。
在一些实施例中，如图4所示，该惠更斯电桥电路221还可以包括第一电阻器R1、第二电阻器R2和第三电阻器R3。该第一电阻器R1的第一端、该第二电阻器R2的第一端和电源2211的一端(例如负极端)电连接。该第三电阻器R3的第一端、该电阻敏感件332的一端和该电源2211的另一端(例如正极端)电连接。该第一电阻器R1的第二端、该第二电阻器R2的第二端、该第三电阻器R3的第二端和该电阻敏感件332的另一端电连接，并且与该电流电压转换电路222的输入端电连接。这里，第 一电阻器R1、第二电阻器R2和第三电阻器R3的电阻都是已知电阻。
在该实施例中，当电阻敏感件发生弯折时，该电阻敏感件的电阻发生变化，该惠更斯电桥电路的平衡被打破，从而有电流I产生。并且该电流I被传输到该电流电压转换电路222的输入端。
需要说明的是，上述电源2211可以作为外部电源设置在该惠更斯电桥电路的外部，也可以作为内部电源设置在该惠更斯电桥电路的内部。
该电流电压转换电路222被配置为将该电桥电流I转换成模拟电压量。并且，该电流电压转换电路222将该模拟电压量传输到模数转换电路223。
该模数转换电路223被配置为将该模拟电压量转换成数字量，并将该数字量传输到处理器240。该数字量表示电阻敏感件332的电阻变化量。
在上述实施例中，实现了对电阻敏感件的电阻变化量的采集。通过将电阻变化量传输到处理器240，从而使得该处理器240根据该电阻变化量调整输出到驱动晶体管260的驱动电压信号的电压值或占空比。这实现了对形变区亮度的补偿，使得形变区的发光更加均匀。
图5是示出根据本公开一个实施例的驱动晶体管的特性曲线图。图5中示出了若干条特性曲线。每条特性曲线对应一个驱动晶体管。该特性曲线的横坐标为驱动晶体管的栅极电压(即驱动电压)V G，纵坐标为驱动晶体管的源漏电流(即驱动发光器件(例如OLED)发光的驱动电流)I DS。以其中任意一条特性曲线为例，在形变区经过弯折或折叠若干次后，该特性曲线可能向左或向右漂移。处理器通过调整驱动电压信号的电压值或占空比，从而使得该漂移的特性曲线回到原来的位置，即实现了亮度补偿。
在一些实施例中，该电阻敏感件包括压电薄膜结构层。该压电薄膜结构层的结构可以参考图6所示。
图6是示出根据本公开一个实施例的电阻敏感件的结构的截面示意图。如图6所示，该电阻敏感件332可以包括第一电极层3321、第二电极层3322、第一OCA(Optically Clear Adhesive，光学透明粘合剂)层3323、第二OCA层3324和压电薄膜层3325。该第一OCA层3323和该第二OCA层3324在该第一电极层3321与该第二电极层3322之间。该压电薄膜层3325在该第一OCA层3323和该第二OCA层3324之间。例如，该第一电极层3321和该第二电极层3322的材料可以为ITO(Indium Tin Oxide，氧化铟锡)。例如，第一电极层3321可以作为该电阻敏感件的一端，第二电 极层3322可以作为该电阻敏感件的另一端。
在该实施例中，电阻敏感件采用了压电薄膜结构层的形式。当该压电薄膜结构层弯曲时，其电阻将发生变化。例如，压电薄膜结构层的弯曲程度越大，其所承受的应力越大，相应的压电效应越明显。在这种情况下，该压电薄膜结构层的电阻相应地也变化。而且电阻变化量和弯曲程度的比例关系可以通过实际测得的弯曲程度-阻值变化曲线来确定。
在另一些实施例中，该电阻敏感件可以包括压阻材料层。例如，该压阻材料层的材料为具有压阻特性的复合材料，其主要包括树脂及分散在树脂中的金属化纤维。当该压阻材料层弯曲时，该压阻材料层的电阻会发生变化。
在本公开的一些实施例中，还提供了一种显示屏。该显示屏可以包括如前所述的补偿装置(例如图2或图4所示的补偿装置)。例如，该显示屏可以为折叠显示屏，上述形变区可以包括折叠区。
在本公开的一些实施例中，还提供了一种显示装置。该显示装置可以包括如上所述的显示屏(例如折叠显示屏)。例如，该显示装置可以为：显示器、手机、平板电脑、笔记本电脑、电视机或导航仪等任何具有显示功能的产品或部件。
图7是示出根据本公开一个实施例的用于显示屏的补偿方法的流程图。如图7所示，该补偿方法可以包括步骤S702至S706。
在步骤S702，检测设置在显示屏的形变区的电阻敏感件的电阻变化量。在电阻敏感件发生形变时，该电阻敏感件的电阻发生变化。
在一些实施例中，该步骤S702可以包括：利用惠更斯电桥电路在电阻敏感件发生形变的情况下产生电桥电流；将该电桥电流转换成模拟电压量；以及将该模拟电压量转换成数字量。该数字量表示该电阻变化量。
在步骤S704，根据电阻变化量获得在形变区的驱动晶体管的特性曲线的漂移量。
在一些实施例中，该步骤S704可以包括：根据电阻变化量获得形变区的弯曲程度；以及根据该弯曲程度获得在该形变区的驱动晶体管的特性曲线的漂移量。
在另一些实施例中，该步骤S704可以包括：根据电阻变化量获得形变区的弯曲程度，并根据电阻变化量出现的次数确定形变区被弯折的次数；以及根据该弯曲程度和该次数获得在该形变区的驱动晶体管的特性曲线的漂移量。
在步骤S706，根据漂移量调整输出到驱动晶体管的驱动电压信号。
在一些实施例中，该步骤S706可以包括：根据漂移量调整输出到驱动晶体管的 驱动电压信号的电压值或占空比。通过调节驱动电压信号的电压值，可以调节驱动晶体管的栅源电压，从而调节形变区的发光亮度。通过调节驱动电压信号的占空比，从而调节该形变区的像素的发光时间。这两种方式均可以实现形变区的亮度补偿，使得形变区的发光更加均匀。
在一些实施例中，根据漂移量调整驱动电压信号的电压值或占空比的步骤可以包括：判断特性曲线的漂移量是否大于阈值；以及在该漂移量大于阈值的情况下，根据该漂移量调整驱动电压信号的电压值或占空比。
在一些实施例中，根据漂移量调整驱动电压信号的电压值或占空比的步骤可以包括：根据漂移量获得从驱动晶体管流出的驱动电流的变化情况；在该驱动电流减小的情况下增大驱动电压信号的电压值或占空比；以及在该驱动电流增大的情况下减小驱动电压信号的电压值或占空比。
至此，提供了根据本公开一些实施例的用于显示屏的补偿方法。在该补偿方法中，检测设置在显示屏的形变区的电阻敏感件的电阻变化量。根据该电阻变化量获得在该形变区的驱动晶体管的特性曲线的漂移量。根据该漂移量调整输出到该驱动晶体管的驱动电压信号。通过调节驱动电压信号，从而可以实现形变区的亮度补偿，使得形变区的发光更加均匀。
至此，已经详细描述了本公开的各实施例。为了避免遮蔽本公开的构思，没有描述本领域所公知的一些细节。本领域技术人员根据上面的描述，完全可以明白如何实施这里公开的技术方案。
虽然已经通过示例对本公开的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上示例仅是为了进行说明，而不是为了限制本公开的范围。本领域的技术人员应该理解，可在不脱离本公开的范围和精神的情况下，对以上实施例进行修改或者对部分技术特征进行等同替换。本公开的范围由所附权利要求来限定。

Claims (20)

  1. 一种用于显示屏的补偿装置，包括：
    检测电路，包含设置在显示屏的形变区的电阻敏感件，所述检测电路被配置为检测所述电阻敏感件的电阻变化量，其中，在所述电阻敏感件发生形变时，所述电阻敏感件的电阻发生变化；以及
    处理器，被配置为根据所述电阻变化量，获得在所述形变区的驱动晶体管的特性曲线的漂移量，并根据所述漂移量，调整输出到所述驱动晶体管的驱动电压信号。
  2. 根据权利要求1所述的补偿装置，其中，所述检测电路包括：
    惠更斯电桥电路，包括所述电阻敏感件，被配置为在所述电阻敏感件发生形变的情况下，产生电桥电流；
    电流电压转换电路，被配置为将所述电桥电流转换成模拟电压量；以及
    模数转换电路，被配置为将所述模拟电压量转换成数字量，并将所述数字量传输到所述处理器，其中，所述数字量表示所述电阻变化量。
  3. 根据权利要求2所述的补偿装置，其中，
    所述惠更斯电桥电路还包括第一电阻器、第二电阻器和第三电阻器；
    其中，所述第一电阻器的第一端、所述第二电阻器的第一端和电源的一端电连接；所述第三电阻器的第一端、所述电阻敏感件的一端和所述电源的另一端电连接；所述第一电阻器的第二端、所述第二电阻器的第二端、所述第三电阻器的第二端和所述电阻敏感件的另一端电连接，并且与所述电流电压转换电路的输入端电连接。
  4. 根据权利要求1至3任意一项所述的补偿装置，其中，
    所述处理器被配置为根据所述电阻变化量获得所述形变区的弯曲程度，并根据所述弯曲程度获得在所述形变区的驱动晶体管的特性曲线的漂移量。
  5. 根据权利要求1至4任意一项所述的补偿装置，其中，
    所述处理器被配置为根据所述漂移量调整输出到所述驱动晶体管的驱动电压信号的电压值或占空比。
  6. 根据权利要求5所述的补偿装置，其中，
    所述处理器被配置为判断所述特性曲线的漂移量是否大于阈值，在所述漂移量大于所述阈值的情况下，根据所述漂移量调整所述驱动电压信号的电压值或占空比。
  7. 根据权利要求5或6所述的补偿装置，其中，
    所述处理器被配置为根据所述漂移量获得从所述驱动晶体管流出的驱动电流的变化情况，在所述驱动电流减小的情况下增大所述驱动电压信号的电压值或占空比，以及在所述驱动电流增大的情况下减小所述驱动电压信号的电压值或占空比。
  8. 根据权利要求4至7任意一项所述的补偿装置，其中，
    所述处理器还被配置为根据所述电阻变化量出现的次数确定所述形变区被弯折的次数，并根据所述弯曲程度和所述次数获得所述特性曲线的漂移量。
  9. 根据权利要求1至8任意一项所述的补偿装置，其中，
    所述电阻敏感件包括压电薄膜结构层或压阻材料层。
  10. 根据权利要求1至9任意一项所述的补偿装置，其中，
    所述电阻敏感件包括第一电极层、第二电极层、第一光学透明粘合剂层、第二光学透明粘合剂层和压电薄膜层，其中，所述第一光学透明粘合剂层和所述第二光学透明粘合剂层在所述第一电极层与所述第二电极层之间，所述压电薄膜层在所述第一光学透明粘合剂层和所述第二光学透明粘合剂层之间。
  11. 一种显示屏，包括：如权利要求1至10任意一项所述的补偿装置。
  12. 根据权利要求11所述的显示屏，其中，所述显示屏为折叠显示屏，所述形变区包括折叠区。
  13. 一种显示装置，包括：如权利要求11或12所述的显示屏。
  14. 一种用于显示屏的补偿方法，包括：
    检测设置在显示屏的形变区的电阻敏感件的电阻变化量，其中，在所述电阻敏感件发生形变时，所述电阻敏感件的电阻发生变化；
    根据所述电阻变化量获得在所述形变区的驱动晶体管的特性曲线的漂移量；以及
    根据所述漂移量调整输出到所述驱动晶体管的驱动电压信号。
  15. 根据权利要求14所述的补偿方法，其中，检测所述电阻敏感件的电阻变化量的步骤包括：
    利用惠更斯电桥电路在电阻敏感件发生形变的情况下产生电桥电流；
    将所述电桥电流转换成模拟电压量；以及
    将所述模拟电压量转换成数字量，其中，所述数字量表示所述电阻变化量。
  16. 根据权利要求14或15所述的补偿方法，其中，根据所述电阻变化量获得在所述形变区的驱动晶体管的特性曲线的漂移量的步骤包括：
    根据所述电阻变化量获得所述形变区的弯曲程度；以及
    根据所述弯曲程度获得在所述形变区的驱动晶体管的特性曲线的漂移量。
  17. 根据权利要求14至16任意一项所述的补偿方法，其中，根据所述漂移量调整输出到所述驱动晶体管的驱动电压信号的步骤包括：
    根据所述漂移量调整输出到所述驱动晶体管的驱动电压信号的电压值或占空比。
  18. 根据权利要求17所述的补偿方法，其中，根据所述漂移量调整所述驱动电压信号的电压值或占空比的步骤包括：
    判断所述特性曲线的漂移量是否大于阈值；以及
    在所述漂移量大于所述阈值的情况下，根据所述漂移量调整所述驱动电压信号的电压值或占空比。
  19. 根据权利要求17或18所述的补偿方法，其中，根据所述漂移量调整所述驱动电压信号的电压值或占空比的步骤包括：
    根据所述漂移量获得从所述驱动晶体管流出的驱动电流的变化情况；
    在所述驱动电流减小的情况下增大所述驱动电压信号的电压值或占空比；以及
    在所述驱动电流增大的情况下减小所述驱动电压信号的电压值或占空比。
  20. 根据权利要求14至19任意一项所述的补偿方法，其中，根据所述电阻变化量获得在所述形变区的驱动晶体管的特性曲线的漂移量的步骤包括：
    根据所述电阻变化量获得所述形变区的弯曲程度，并根据所述电阻变化量出现的次数确定所述形变区被弯折的次数；以及
    根据所述弯曲程度和所述次数获得在所述形变区的驱动晶体管的特性曲线的漂移量。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117848230A (zh) * 2024-02-22 2024-04-09 南京锦振盈科技有限公司 Led显示屏幕变形程度检测系统

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110164340B (zh) * 2018-12-06 2021-01-26 京东方科技集团股份有限公司 补偿装置、显示屏、显示装置和补偿方法
CN110706655B (zh) 2019-10-21 2021-03-30 京东方科技集团股份有限公司 可拉伸显示面板、晶体管的阈值电压的补偿方法及计算机可读存储介质
CN110718186B (zh) * 2019-10-29 2020-12-11 厦门天马微电子有限公司 一种柔性显示装置及驱动方法
CN110853579A (zh) * 2019-11-29 2020-02-28 京东方科技集团股份有限公司 一种显示装置及其控制方法
CN111081187B (zh) * 2020-01-06 2021-08-06 京东方科技集团股份有限公司 柔性显示面板、卷曲检测方法、装置及显示设备
CN111681586B (zh) * 2020-06-11 2022-08-16 Oppo广东移动通信有限公司 折叠屏及其控制方法、电子设备
CN113888983B (zh) * 2021-11-01 2024-01-23 合肥维信诺科技有限公司 盖板及柔性显示模组

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102930824A (zh) * 2012-11-13 2013-02-13 京东方科技集团股份有限公司 像素电路及驱动方法、显示装置
CN103792478A (zh) * 2014-02-24 2014-05-14 东南大学 一种绝缘栅双极型晶体管直流特性的仿真方法
CN104900186A (zh) * 2015-06-15 2015-09-09 京东方科技集团股份有限公司 Oled像素电路及其显示装置
CN105551427A (zh) * 2014-10-30 2016-05-04 业鑫科技顾问股份有限公司 有机发光二极管显示器及其驱动方法
CN106910842A (zh) * 2017-04-17 2017-06-30 京东方科技集团股份有限公司 一种封装结构、柔性显示基板和柔性显示装置
WO2018205565A1 (en) * 2017-05-12 2018-11-15 Boe Technology Group Co., Ltd. Pixel-driving circuit and compensation method thereof, display panel, and display apparatus
CN110164340A (zh) * 2018-12-06 2019-08-23 京东方科技集团股份有限公司 补偿装置、显示屏、显示装置和补偿方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5813103B2 (ja) * 2010-06-11 2015-11-17 スリーエム イノベイティブ プロパティズ カンパニー 力測定を用いるタッチ位置センサ
KR102004409B1 (ko) * 2012-08-23 2019-07-29 삼성전자주식회사 플렉서블 디스플레이 장치 및 그 제어 방법
KR20140120585A (ko) * 2013-04-03 2014-10-14 삼성디스플레이 주식회사 접이식 표시 장치
KR102082779B1 (ko) 2013-04-16 2020-03-02 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제어 방법
KR102118403B1 (ko) * 2013-05-08 2020-06-03 삼성전자주식회사 연성 기기, 연성 기기의 형상 감지 장치, 방법 및 컴퓨터 판독 가능한 기록 매체
KR102138036B1 (ko) * 2014-01-07 2020-07-28 삼성디스플레이 주식회사 플렉서블 표시장치 및 이의 제어방법
US20150296607A1 (en) * 2014-04-11 2015-10-15 Apple Inc. Electronic Device With Flexible Printed Circuit Strain Gauge Sensor
KR102511325B1 (ko) * 2014-04-18 2023-03-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 동작 방법
CN104952386B (zh) * 2015-07-24 2017-09-26 上海和辉光电有限公司 显示装置、伽马补偿装置及伽马补偿方法
US10614757B2 (en) * 2015-12-02 2020-04-07 Sharp Kabushiki Kaisha Flexible display device and method for detecting bending state thereof
JP6998690B2 (ja) * 2016-07-28 2022-01-18 株式会社半導体エネルギー研究所 情報端末
WO2018056165A1 (ja) * 2016-09-21 2018-03-29 株式会社村田製作所 圧電センサ、タッチ式入力装置
KR102601137B1 (ko) * 2016-10-31 2023-11-09 엘지디스플레이 주식회사 플렉서블 표시패널 및 이를 이용한 플렉서블 표시장치
CN107195667B (zh) * 2017-06-30 2020-02-21 武汉天马微电子有限公司 一种柔性有机发光显示面板和电子设备
CN107331304B (zh) * 2017-08-18 2019-11-22 深圳市华星光电半导体显示技术有限公司 柔性显示器及其弯折显示异常的改善方法和改善装置
CN107437400B (zh) * 2017-09-04 2020-08-07 上海天马有机发光显示技术有限公司 显示面板和显示装置
US20190393278A1 (en) * 2018-06-26 2019-12-26 Innolux Corporation Display device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102930824A (zh) * 2012-11-13 2013-02-13 京东方科技集团股份有限公司 像素电路及驱动方法、显示装置
CN103792478A (zh) * 2014-02-24 2014-05-14 东南大学 一种绝缘栅双极型晶体管直流特性的仿真方法
CN105551427A (zh) * 2014-10-30 2016-05-04 业鑫科技顾问股份有限公司 有机发光二极管显示器及其驱动方法
CN104900186A (zh) * 2015-06-15 2015-09-09 京东方科技集团股份有限公司 Oled像素电路及其显示装置
CN106910842A (zh) * 2017-04-17 2017-06-30 京东方科技集团股份有限公司 一种封装结构、柔性显示基板和柔性显示装置
WO2018205565A1 (en) * 2017-05-12 2018-11-15 Boe Technology Group Co., Ltd. Pixel-driving circuit and compensation method thereof, display panel, and display apparatus
CN110164340A (zh) * 2018-12-06 2019-08-23 京东方科技集团股份有限公司 补偿装置、显示屏、显示装置和补偿方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117848230A (zh) * 2024-02-22 2024-04-09 南京锦振盈科技有限公司 Led显示屏幕变形程度检测系统

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