CN110706655B - 可拉伸显示面板、晶体管的阈值电压的补偿方法及计算机可读存储介质 - Google Patents
可拉伸显示面板、晶体管的阈值电压的补偿方法及计算机可读存储介质 Download PDFInfo
- Publication number
- CN110706655B CN110706655B CN201911003295.7A CN201911003295A CN110706655B CN 110706655 B CN110706655 B CN 110706655B CN 201911003295 A CN201911003295 A CN 201911003295A CN 110706655 B CN110706655 B CN 110706655B
- Authority
- CN
- China
- Prior art keywords
- display panel
- voltage
- stretchable display
- transistor
- compensation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000010409 thin film Substances 0.000 claims description 9
- 230000000875 corresponding effect Effects 0.000 description 7
- 230000005684 electric field Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 2
- 238000002425 crystallisation Methods 0.000 description 2
- 230000008025 crystallization Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3258—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the voltage across the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
- G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/03—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes specially adapted for displays having non-planar surfaces, e.g. curved displays
- G09G3/035—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes specially adapted for displays having non-planar surfaces, e.g. curved displays for flexible display surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
- H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/04—Structural and physical details of display devices
- G09G2300/0421—Structural details of the set of electrodes
- G09G2300/0426—Layout of electrodes and connections
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
- G09G2300/0842—Several active elements per pixel in active matrix panels forming a memory circuit, e.g. a dynamic memory with one capacitor
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/04—Maintaining the quality of display appearance
- G09G2320/043—Preventing or counteracting the effects of ageing
- G09G2320/045—Compensation of drifts in the characteristics of light emitting or modulating elements
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2360/00—Aspects of the architecture of display systems
- G09G2360/14—Detecting light within display terminals, e.g. using a single or a plurality of photosensors
- G09G2360/145—Detecting light within display terminals, e.g. using a single or a plurality of photosensors the light originating from the display screen
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2380/00—Specific applications
- G09G2380/02—Flexible displays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
本公开提供了一种可拉伸显示面板、一种可拉伸显示面板中的晶体管的阈值电压的补偿方法及一种计算机可读存储介质。该可拉伸显示面板包括:衬底基板;位于衬底基板上的晶体管,所述晶体管包括栅极层和有源层;电压补偿层,所述电压补偿层位于所述晶体管和所述衬底基板之间,其中,所述电压补偿层被施加依赖于所述显示面板的拉伸量的补偿电压。
Description
技术领域
本公开涉及显示技术领域,具体地涉及一种可拉伸显示面板、可拉伸显示面板中的晶体管的阈值电压的补偿方法及计算机可读存储介质。
背景技术
在OLED(有机发光二极管,Organic Light Emitting Diode)显示面板中,越来越多地期望有一些柔性设计来满足各种需要。于是,希望显示面板能够在一定程度上是可拉伸的。可拉伸的显示面板在机械结构上可能需要一些防止断裂的设计。而对于可拉伸的显示面板在拉伸状态下的电学性能的研究和专门设计尚显不足。
发明内容
本公开提出了一种可拉伸显示面板,包括:
衬底基板;
位于衬底基板上的晶体管,所述晶体管包括栅极层和有源层;
电压补偿层,所述电压补偿层位于所述晶体管和所述衬底基板之间,其中,所述电压补偿层被施加依赖于所述显示面板的拉伸量的补偿电压。
在一些实施例中,所述可拉伸显示面板还包括控制器,所述控制器的输出端与所述电压补偿层电连接,所述控制器配置成根据所述显示面板的拉伸量来向所述电压补偿层提供所述补偿电压。
在一些实施例中,所述可拉伸显示面板还包括存储器,所述存储器中存储有补偿电压参考表,所述控制器配置成基于可拉伸显示面板的拉伸量和所述补偿电压参考表来生成所述电压。
在一些实施例中,所述电压补偿层包括遮光层,所述遮光层至少部分地遮挡所述有源层。
在一些实施例中,所述电压补偿层在衬底基板上的正投影覆盖所述晶体管中的所述有源层在衬底基板上的正投影。
在一些实施例中,所述电压补偿层在衬底基板上的正投影的边缘至少部分地超出所述晶体管中的所述有源层在衬底基板上的正投影的边缘至少0.8微米。
在一些实施例中,所述电压补偿层在衬底基板上的正投影的边缘至少部分地超出所述晶体管中的所述有源层在衬底基板上的正投影的边缘至少3微米。
在一些实施例中,所述晶体管中的所述栅极层在衬底基板上的正投影覆盖所述电压补偿层在衬底基板上的正投影。
在一些实施例中,所述晶体管中的所述栅极层在衬底基板上的正投影的边缘至少部分地超出所述电压补偿层在衬底基板上的正投影的边缘至少1微米。
在一些实施例中,所述栅极层位于所述电压补偿层与所述有源层之间或者所述有源层位于所述栅极层与所述电压补偿层之间。
在一些实施例中,所述可拉伸显示面板还包括有机发光二极管发光元件,其中,所述晶体管为用于驱动所述发光元件发光的驱动薄膜晶体管。
在一些实施例中,所述电压补偿层的厚度在60至150纳米之间。
本公开的实施例提供了一种可拉伸显示面板中的晶体管的阈值电压的补偿方法,包括:
检测可拉伸显示面板的拉伸量;
根据可拉伸显示面板的拉伸量生成补偿电压;以及
将所述补偿电压施加于所述可拉伸显示面板的电压补偿层以减小或消除可拉伸显示面板的拉伸量造成的晶体管的阈值电压的偏移,所述电压补偿层位于所述晶体管和所述可拉伸显示面板的衬底基板之间。
在一些实施例中,所述可拉伸显示面板中的晶体管的阈值电压的补偿方法还包括:生成补偿电压参考表,其中,所述根据可拉伸显示面板的拉伸量生成补偿电压包括:
基于可拉伸显示面板的拉伸量和所述补偿电压参考表来生成所述补偿电压。
在一些实施例中,所述生成补偿电压参考表包括:
测量晶体管在所述可拉伸显示面板的不同拉伸量下的阈值电压值;
测量或计算晶体管在所述可拉伸显示面板的不同拉伸量下保持阈值电压值恒定所需的所述补偿电压的值;以及
根据在所述可拉伸显示面板的不同拉伸量下所需的所述补偿电压的值生成补偿电压参考表。
在一些实施例中,所述晶体管为用于驱动所述可拉伸显示面板中的发光元件发光的驱动薄膜晶体管,且所述生成补偿电压参考表包括:
测量所述可拉伸显示面板在不同拉伸量下的发光亮度;
测量或计算所述可拉伸显示面板的在不同拉伸量下保持发光亮度恒定所需的所述补偿电压的值;以及
根据所述可拉伸显示面板的在不同拉伸量下保持发光亮度恒定所需的所述补偿电压的值生成补偿电压参考表。
本公开的实施例还公开了一种计算机可读存储介质,其中存储有计算机指令,当所述指令被处理器执行时实现以下步骤:
获取可拉伸显示面板的拉伸量;
根据可拉伸显示面板的拉伸量生成补偿电压;以及
将所述补偿电压向所述可拉伸显示面板的电压补偿层输出以减小或消除可拉伸显示面板的拉伸量造成的晶体管的阈值电压的偏移,所述电压补偿层位于所述晶体管和所述可拉伸显示面板的衬底基板之间。
附图说明
为了更清楚地说明本公开实施例或现有技术中的技术方案,下面将对实施例描述中所需要使用的附图作简单地介绍。显而易见地,下面描述中的附图仅仅是本公开的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图,图中:
图1示出了一种OLED显示面板的示例性的像素驱动电路的示意图。
图2示意性地示出了根据本公开的实施例的显示面板中与图1的驱动电路中的驱动晶体管T3对应的局部膜层结构。
图3示意性地示出了根据本公开的一些实施例的显示面板沿着图2中的AA’线截得的一种示例性剖视图。
图4示意性地示出了根据本公开的另一些实施例的显示面板的另一种示例性剖视图。
图5示意性地示出了根据本公开的另一些实施例的显示面板的又一种示例性剖视图。
图6示意性地示出了根据本公开的一些实施例的显示面板上的控制器以及该控制器与电压补偿层的连接。
图7A、图7B和图7C示意性地示出了根据本公开的实施例的可拉伸显示面板中的晶体管的阈值电压的补偿方法的流程图。
图8示意性地示出了利用补偿电压参考表来对可拉伸显示面板中的晶体管的阈值电压进行补偿的方框图。
图9示意性地示出了根据本公开的实施例的计算机可读存储介质所执行的步骤。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚,下面将结合本公开实施例中的附图,对本公开实施例中的技术方案进行清楚、完整的描述。显然,所描述的实施例是本公开的一部分实施例,而不是全部。基于所描述的本公开实施例,本领域普通技术人员在无需创造性劳动的前提下获得的所有其他实施例都属于本公开保护的范围。应注意,贯穿附图,相同的元素由相同或相近的附图标记来表示。在以下描述中,一些具体实施例仅用于描述目的,而不应该理解为对本公开有任何限制,而只是本公开实施例的示例。在可能导致对本公开的理解造成混淆时,将省略常规结构或构造。应注意,图中各部件的形状和尺寸不反映真实大小和比例,而仅示意本公开实施例的内容。
除非另外定义,本公开实施例使用的技术术语或科学术语应当是本领域技术人员所理解的通常意义。本公开实施例中使用的“第一”、“第二”以及类似词语并不表示任何顺序、数量或重要性,而只是用于区分不同的组成部分。
此外,在本公开实施例的描述中,术语“电连接”可以是指两个组件直接电连接,也可以是指两个组件之间经由一个或多个其他组件电连接。此外,这两个组件可以通过有线或无线方式电连接或耦接。
本公开实施例中采用的晶体管均可以为薄膜晶体管或场效应管或其他特性相同的器件。由于这里采用的薄膜晶体管的源极、漏极是对称的,所以其源极、漏极可以互换。在以下示例中主要以用作驱动晶体管的P型薄膜晶体管的情况进行描述,其他晶体管根据电路设计与驱动晶体管具有相同或不同的类型。类似地,在其他实施例中,驱动晶体管也可以被示为N型薄膜晶体管。
图1示出了一种OLED显示面板的示例性的像素驱动电路的示意图。在该像素驱动电路中,包括第一晶体管T1、第二晶体管T2、第三晶体管T3、第四晶体管T4、第五晶体管T5、第六晶体管T6、第七晶体管T7、存储电容C1等多个元件。其中,第一晶体管T1、第二晶体管T2、第四晶体管T4、第五晶体管T5、第六晶体管T6、第七晶体管T7的栅极分别由EM、Reset、Gate等特定信号来控制,而第三晶体管T3为驱动晶体管,用于主要控制信号线上的数据电压Vdata来驱动发光元件D1发光。VDD和VSS信号均为直流电压信号,用于为驱动发光元件D1发光提供必要的电压。
本申请的发明人已经发现,当可拉伸显示面板被拉伸时,显示面板用于驱动像素发光的驱动晶体管的阈值电压会产生相应的变化。参见下表1,当显示面板被拉伸约10%时,与显示面板未被拉伸相比,驱动晶体管(如DTFT)的阈值电压(Vth,即晶体管处于临界导通状态时的栅极电压)可能会总体上负向偏移1伏左右,相应地,载流子迁移率(Mob)会下降,而亚阈值摆幅(SS)会上升。驱动晶体管的阈值电压的下降对于电路的驱动能力是不利的。然而,如果简单地通过增加整个面板的驱动电压来保障驱动晶体管的驱动能力,则有可能会影响其他器件的工作和增加较大的功耗。
表1可拉伸显示面板上不同的测试位置的驱动晶体管的参数变化
为了解决上述问题,本公开的实施例提供了一种可拉伸显示面板的结构。如图2和图3所示,该可拉伸显示面板100包括:衬底基板10;位于衬底基板10上的晶体管20,所述晶体管20包括栅极层21和有源层22;以及电压补偿层30,所述电压补偿层30位于所述晶体管20和所述衬底基板10之间。图2和图3示出了这种可拉伸显示面板100的示例性结构。为了清楚起见,图2的平面图中仅仅示出了晶体管20及其周边的局部结构,且仅示出了栅极层21、有源层22和电压补偿层30。图3是沿着图2中的线AA’所截得的剖视图。在图3中,除去上述栅极层21、有源层22和电压补偿层30之外还示出了多个绝缘层(例如基底10和电压补偿层30之间的第一绝缘层(例如由聚酰亚胺等制成的阻挡层)41、有源层22和电压补偿层30之间的第二绝缘层(例如由氧化硅等制成的缓冲层)42以及栅极层21和有源层22之间的第三绝缘层(例如由氧化硅等制成的缓冲层)43等)。这些绝缘层中例如第一绝缘层41等是可选的。
在本公开的实施例中,电压补偿层30被施加依赖于所述显示面板100的拉伸量的补偿电压。向电压补偿层30施加补偿电压可以有效地抑制晶体管20由于显示面板的拉伸而导致的阈值电压的负向偏移。例如,当晶体管20为P型晶体管时,可以在电压补偿层30施加以适当的负电压,来防止阈值电压因显示面板的拉伸而导致的负向偏移。下表2给出了在电压补偿层30上施加补偿电压的示例。从表2中可以看出,当显示面板的拉伸量(拉伸量可以由长度变化值(例如在某一方向上)来表示,也可以由长度变化值与原长度的比值来表示)逐渐增加时,晶体管的阈值电压的负向偏移(或者说是阈值电压的变化量)ΔVth逐渐增加,而在向电压补偿层30施加以补偿电压之后,阈值电压的负向偏移可以被消除。在实际中,补偿电压是需要随着显示面板的拉伸量来变化的。
表2显示面板的不同拉伸量所对应的补偿电压
拉伸量 | Vth | ΔVth | 补偿电压 | 调节后Vth |
0% | -2.9V | 0V | 0V | -2.9V |
2% | -3V | -0.1V | -0.5V | -2.9V |
4% | -3.4V | -0.5V | -2V | -2.9V |
6% | -3.5V | -0.6V | -2.5V | -2.9V |
在本公开的实施例中,电压补偿层30在工作状态下是导电的,例如可以由导电材料制成。
在本公开的实施例中,如图6所示,可拉伸显示面板100还可以包括控制器50。控制器50的输出端51可以与上述电压补偿层30电连接,从而根据所述显示面板100的拉伸量来向所述电压补偿层30提供所述补偿电压。需要说明的是,在显示面板100上,可以具有多个晶体管,因此,当需要对多个晶体管分别进行补偿时,控制器50可以具有多个输出端51、51’,分别与对应于不同的晶体管的多个电压补偿层30、30’电连接,从而为不同的电压补偿层30、30’分别施加补偿电压。根据需要,对于不同的晶体管,其所对应的电压补偿层30、30’上所施加的补偿电压可以相同,也可以不同。
在一些实施例中,控制器50例如可以由各种处理器来实现。
在本公开的实施例中,通过提供电压补偿层30,不仅可以抑制晶体管的阈值电压随着显示面板的伸长而导致的负向偏移,而且可以改善晶体管的翘曲效应(Kink effect)以使晶体管的输出电流更为稳定。
在一些实施例中,只需要对显示面板中的关键的晶体管(例如用于驱动发光元件的驱动晶体管)来进行电压补偿。驱动晶体管的电压补偿对于确保显示面板的显示亮度和均匀性是十分有益的。然而,本公开的实施例不限于此,例如,也可以对于显示面板上的除去驱动晶体管之外的晶体管进行补偿。
在一些实施例中,可拉伸显示面板100还可以包括存储器60,所述存储器60中存储有补偿电压参考表。所述控制器50配置成基于可拉伸显示面板的拉伸量和所述补偿电压参考表来生成补偿电压。补偿电压参考表可以通过测试或模拟计算来实现。例如基于上述表2的结果,可以得出如下补偿电压参考表的示例,如表3所示。
表3补偿电压参考表的示例
拉伸量 | 补偿电压 |
0% | 0V |
2% | -0.5V |
4% | -2V |
6% | -2.5V |
从表3所示的简单示例中可以看出,补偿电压参考表包含的是显示面板的拉伸量与补偿电压的对应关系。补偿电压参考表的具体形式不限于此,可以例如是数学查找表、映射图等等,只要能够表示显示面板的拉伸量与补偿电压的对应关系即可。在一些实施例中,可以通过检测器70(例如应变传感器)来检测显示面板的拉伸量,也可以例如通过捕捉与显示面板的拉伸量相关联的信号参数(例如阈值电压等)变化来确定显示面板的拉伸量。在一些实施例中,控制器50、存储器60和检测器70中的全部或部分可以集成在集成电路芯片中。
在一些实施例中,所述电压补偿层30可以包括遮光层,所述遮光层至少部分地遮挡所述有源层22。在此情况下,电压补偿层30还可以起到防止有源层22被辐射(例如红外光)过度照射的效果。将电压补偿层30设置成遮光层,能够将两种功能结合在同一层中,可以简化工艺,避免增加过多的膜层。电压补偿层30例如可以由钼等金属制成。
在一些实施例中,如图2和图3所示,所述电压补偿层30在衬底基板10上的正投影覆盖所述晶体管20中的所述有源层22在衬底基板10上的正投影,例如,所述电压补偿层30在衬底基板10上的正投影的边缘至少超出所述晶体管20中的所述有源层22在衬底基板10上的正投影的边缘0.8微米,甚至至少超出所述晶体管中的所述有源层在衬底基板上的正投影的边缘3微米。电压补偿层30在被施加电压时,电压补偿层30的边缘的电场可能不如电压补偿层30的远离边缘的部分处的电场均匀,这是由于电压补偿层30的边缘处于不同介质的分界处。因而,如果电压补偿层30不能完全覆盖有源层22,则有源层22中的诸如多晶硅等材料的边缘处将比较明显地受到电压补偿层30的边缘的电场的影响而产生晶化异常。
需要说明的是,在本公开的上述实施例中,可以是所述电压补偿层30在衬底基板10上的正投影的整个边缘完全超出所述晶体管20中的所述有源层22在衬底基板10上的正投影的边缘至少0.8微米或3微米,也可以是所述电压补偿层30在衬底基板10上的正投影的部分边缘超出所述晶体管20中的所述有源层22在衬底基板10上的正投影的边缘至少0.8微米或3微米。
电压补偿层30在衬底基板10上的正投影完全覆盖所述晶体管20中的所述有源层22在衬底基板10上的正投影且电压补偿层30在衬底基板10上的正投影的边缘超出所述晶体管20中的所述有源层22在衬底基板10上的正投影的边缘一定距离,可以削弱或抑制电压补偿层30的边缘的电场对于有源层22中的材料的结晶的影响。
另外,当电压补偿层30用作遮光层时,电压补偿层30在衬底基板10上的正投影完全覆盖所述晶体管20中的所述有源层22在衬底基板10上的正投影也更有利于电压补偿层30对有源层22遮光。
在一些实施例中,晶体管20中的栅极层21的形状可以与对应的电压补偿层30相类似,如图2所示。
在一些实施例中,所述晶体管20中的栅极层21在衬底基板10上的正投影覆盖所述电压补偿层30在衬底基板10上的正投影。例如,所述晶体管20中的所述栅极层21在衬底基板10上的正投影的边缘至少超出所述电压补偿层30在衬底基板10上的正投影的边缘1微米。所述晶体管20中的栅极层21在衬底基板10上的正投影完全覆盖所述电压补偿层30在衬底基板10上的正投影,可以使得电压补偿层30上产生的所有电场都可以作用于栅极层21,这可以提高施加于电压补偿层30上的补偿电压所形成的电场的利用率,提高效率。
需要说明的是,在本公开的上述实施例中,可以是所述晶体管20中的所述栅极层21在衬底基板10上的正投影的整个边缘完全超出所述电压补偿层30在衬底基板10上的正投影的边缘至少1微米,也可以是所述晶体管20中的所述栅极层21在衬底基板10上的正投影的部分边缘超出所述电压补偿层30在衬底基板10上的正投影的边缘至少1微米。
在一些实施例中,电压补偿层30的厚度可以在60至150纳米之间。电压补偿层30保持适度的厚度,可以防止电压补偿层30的电场干扰栅极层21对沟道电荷的调节作用,以保持晶体管20具有良好特性。
在一些实施例中,如图3所示,所述有源层22可以位于所述栅极层21与所述电压补偿层30之间。而在另一些实施例中,如图4所示,所述栅极层21可以位于所述电压补偿层30与所述有源层22之间。在图5中较为完整地示出了晶体管20,其中晶体管20包括栅极层21、有源层22、源极23和漏极24以及位于栅极层21和有源层22之间的栅极绝缘层43。
本公开的实施例还提供了一种可拉伸显示面板中的晶体管的阈值电压的补偿方法。如图7A所示(图7A中的虚线框表示可选的步骤),该方法可以包括:
步骤S10:检测可拉伸显示面板的拉伸量;
步骤S20:根据可拉伸显示面板的拉伸量生成补偿电压;以及
步骤S30:将所述补偿电压施加于所述可拉伸显示面板的电压补偿层以减小或消除可拉伸显示面板的拉伸量造成的晶体管的阈值电压的偏移,所述电压补偿层位于所述晶体管和所述可拉伸显示面板的衬底基板之间。
在一些实施例中,该方法还可以包括:
步骤S40:生成补偿电压参考表。
在一些实施例中,所述步骤S20还包括:
步骤S21:基于可拉伸显示面板的拉伸量和所述补偿电压参考表来生成所述补偿电压。
补偿电压参考表的示例参见表3。
图8给出了根据本公开的一些实施例的可拉伸显示面板中的晶体管的阈值电压的补偿方法的示意性方框图。在方块B10中,检测可拉伸显示面板的拉伸量,例如可通过检测器70(例如应变传感器)来检测显示面板的拉伸量,也可以例如通过捕捉与显示面板的拉伸量相关联的信号参数(例如阈值电压等)变化来确定显示面板的拉伸量。在方块B20中,可以通过实际测试来建立补偿电压参考表。在方块B30中,可以将所测量的显示面板的拉伸量与补偿电压参考表进行比对。在方块B40中,可以根据比对的结果生成具体的补偿电压值并将该补偿电压值施加于与目标晶体管相对应的电压补偿层30。在一些实施例中,上述过程可以实时地进行。随着显示面板的拉伸量的变化,从方块B40输出的补偿电压值也随之不断变化。
在一些实施例中,如图7B所示,所述步骤S40包括:
步骤S41:测量晶体管在所述可拉伸显示面板的不同拉伸量下的阈值电压值;
步骤S42:测量或计算晶体管在所述可拉伸显示面板的不同拉伸量下保持阈值电压值恒定所需的所述补偿电压的值;以及
步骤S43:根据在所述可拉伸显示面板的不同拉伸量下所需的所述补偿电压的值生成补偿电压参考表。
上述对于所述补偿电压的值的测量或计算可参见表2。
由于显示面板的发光亮度往往和驱动晶体管的阈值电压是正相关的,因此,在一些实施例中,当所述晶体管20为用于驱动所述可拉伸显示面板中的发光元件发光的驱动晶体管(例如薄膜晶体管)时,还可以通过发光亮度的变化来生成补偿电压参考表。例如,如图7C所示,上述步骤S40可以包括:
步骤S41’:测量所述可拉伸显示面板在不同拉伸量下的发光亮度;
步骤S42’:测量或计算所述可拉伸显示面板的在不同拉伸量下保持发光亮度恒定所需的所述补偿电压的值;以及
步骤S43’:根据所述可拉伸显示面板的在不同拉伸量下保持发光亮度恒定所需的所述补偿电压的值生成补偿电压参考表。
下表4给出了显示面板的不同拉伸量所对应的晶体管阈值电压和显示面板发光亮度的示例。由于显示面板发光亮度的测量通常比晶体管的阈值电压更直观,因此,在一些应用场景中,基于显示面板发光亮度来生成补偿电压参考表也具有一定优势。
表4显示面板的不同拉伸量所对应的发光亮度以及所需补偿电压
拉伸量 | Vth | 发光亮度 | 补偿电压 | 调节后Vth |
0% | -2.9V | 430nit | 0V | -2.9V |
2% | -3V | 400nit | -0.5V | -2.9V |
4% | -3.4V | 370nit | -2V | -2.9V |
6% | -3.5V | 340nit | -2.5V | -2.9V |
本公开的实施例还提供了一种计算机可读存储介质,其中存储有计算机指令,参见图9,当所述指令被处理器执行时实现以下步骤:
步骤S50:获取可拉伸显示面板的拉伸量;
步骤S60:根据可拉伸显示面板的拉伸量生成补偿电压;以及
步骤S70:将所述补偿电压向所述可拉伸显示面板的电压补偿层输出以减小或消除可拉伸显示面板的拉伸量造成的晶体管的阈值电压的偏移,所述电压补偿层位于所述晶体管和所述可拉伸显示面板的衬底基板之间。
在一些实施例中,所述根据可拉伸显示面板的拉伸量生成补偿电压可以包括:
步骤S61:根据补偿电压参考表来生成所述补偿电压。
以上的详细描述通过使用示意图、流程图和/或示例,已经阐述了本公开的众多实施例。在这种示意图、流程图和/或示例包含一个或多个功能和/或操作的情况下,本领域技术人员应理解,这种示意图、流程图或示例中的每一功能和/或操作可以通过各种结构、硬件、软件、固件或实质上它们的任意组合来单独和/或共同实现。在一个实施例中,本发明的实施例所述主题的若干部分可以通过专用集成电路(ASIC)、现场可编程门阵列(FPGA)、数字信号处理器(DSP)、或其他集成格式来实现。然而,本领域技术人员应认识到,这里所公开的实施例的一些方面在整体上或部分地可以等同地实现在集成电路中,实现为在一台或多台计算机上运行的一个或多个计算机程序(例如,实现为在一台或多台计算机系统上运行的一个或多个程序),实现为在一个或多个处理器上运行的一个或多个程序(例如,实现为在一个或多个微处理器上运行的一个或多个程序),实现为固件,或者实质上实现为上述方式的任意组合,并且本领域技术人员根据本公开,将具备设计电路和/或写入软件和/或固件代码的能力。此外,本领域技术人员将认识到,本公开所述主题的机制能够作为多种形式的程序产品进行分发,并且无论实际用来执行分发的信号承载介质的具体类型如何,本公开所述主题的示例性实施例均适用。信号承载介质的示例包括但不限于:可记录型介质,如软盘、硬盘驱动器、光盘(CD、DVD)、数字磁带、计算机存储器等;以及传输型介质,如数字和/或模拟通信介质(例如,光纤光缆、波导、有线通信链路、无线通信链路等)。
虽然在本公开的实施例中以可拉伸的OLED显示面板为例进行描述,但是,本领域技术人员应当理解,本公开的实施例不限于此,例如,本公开的技术构思也可以用于其他类型的显示面板。
除非存在技术障碍或矛盾,本发明的上述各种实施方式可以自由组合以形成另外的实施例,这些另外的实施例均在本发明的保护范围中。
虽然结合附图对本发明进行了说明,但是附图中公开的实施例旨在对本发明优选实施方式进行示例性说明,而不能理解为对本发明的一种限制。
虽然已参照几个典型实施例描述了本公开,但应当理解,所用的术语是说明和示例性、而非限制性的术语。由于本公开能够以多种形式具体实施而不脱离公开的精神或实质,所以应当理解,上述实施例不限于任何前述的细节,而应在随附权利要求所限定的精神和范围内广泛地解释,因此落入权利要求或其等效范围内的全部变化和改型都应为随附权利要求所涵盖。
Claims (17)
1.一种可拉伸显示面板,包括:
衬底基板;
位于衬底基板上的晶体管,所述晶体管包括栅极层和有源层;
电压补偿层,所述电压补偿层位于所述晶体管和所述衬底基板之间,
其中,所述电压补偿层被施加依赖于所述显示面板的拉伸量的补偿电压。
2.根据权利要求1所述的可拉伸显示面板,还包括控制器,所述控制器的输出端与所述电压补偿层电连接,所述控制器配置成根据所述显示面板的拉伸量来向所述电压补偿层提供所述补偿电压。
3.根据权利要求2所述的可拉伸显示面板,还包括存储器,所述存储器中存储有补偿电压参考表,所述控制器配置成基于可拉伸显示面板的拉伸量和所述补偿电压参考表来生成所述电压。
4.根据权利要求1所述的可拉伸显示面板,其中,所述电压补偿层包括遮光层,所述遮光层至少部分地遮挡所述有源层。
5.根据权利要求1所述的可拉伸显示面板,其中,所述电压补偿层在衬底基板上的正投影覆盖所述晶体管中的所述有源层在衬底基板上的正投影。
6.根据权利要求5所述的可拉伸显示面板,其中,所述电压补偿层在衬底基板上的正投影的边缘至少部分地超出所述晶体管中的所述有源层在衬底基板上的正投影的边缘至少0.8微米。
7.根据权利要求6所述的可拉伸显示面板,其中,所述电压补偿层在衬底基板上的正投影的边缘至少部分地超出所述晶体管中的所述有源层在衬底基板上的正投影的边缘至少3微米。
8.根据权利要求1所述的可拉伸显示面板,其中,所述晶体管中的所述栅极层在衬底基板上的正投影覆盖所述电压补偿层在衬底基板上的正投影。
9.根据权利要求8所述的可拉伸显示面板,其中,所述晶体管中的所述栅极层在衬底基板上的正投影的边缘至少部分地超出所述电压补偿层在衬底基板上的正投影的边缘至少1微米。
10.根据权利要求1至9中任一项所述的可拉伸显示面板,其中,所述栅极层位于所述电压补偿层与所述有源层之间或者所述有源层位于所述栅极层与所述电压补偿层之间。
11.根据权利要求1至9中任一项所述的可拉伸显示面板,还包括有机发光二极管发光元件,其中,所述晶体管为用于驱动所述发光元件发光的驱动薄膜晶体管。
12.根据权利要求1至9中任一项所述的可拉伸显示面板,其中所述电压补偿层的厚度在60至150纳米之间。
13.一种可拉伸显示面板中的晶体管的阈值电压的补偿方法,包括:
检测可拉伸显示面板的拉伸量;
根据可拉伸显示面板的拉伸量生成补偿电压;以及
将所述补偿电压施加于所述可拉伸显示面板的电压补偿层以减小或消除可拉伸显示面板的拉伸量造成的晶体管的阈值电压的偏移,所述电压补偿层位于所述晶体管和所述可拉伸显示面板的衬底基板之间。
14.根据权利要求13所述的可拉伸显示面板中的晶体管的阈值电压的补偿方法,还包括:生成补偿电压参考表,其中,所述根据可拉伸显示面板的拉伸量生成补偿电压包括:
基于可拉伸显示面板的拉伸量和所述补偿电压参考表来生成所述补偿电压。
15.根据权利要求14所述的可拉伸显示面板中的晶体管的阈值电压的补偿方法,其中,所述生成补偿电压参考表包括:
测量晶体管在所述可拉伸显示面板的不同拉伸量下的阈值电压值;
测量或计算晶体管在所述可拉伸显示面板的不同拉伸量下保持阈值电压值恒定所需的所述补偿电压的值;以及
根据在所述可拉伸显示面板的不同拉伸量下所需的所述补偿电压的值生成补偿电压参考表。
16.根据权利要求14所述的可拉伸显示面板中的晶体管的阈值电压的补偿方法,其中,所述晶体管为用于驱动所述可拉伸显示面板中的发光元件发光的驱动薄膜晶体管,且所述生成补偿电压参考表包括:
测量所述可拉伸显示面板在不同拉伸量下的发光亮度;
测量或计算所述可拉伸显示面板的在不同拉伸量下保持发光亮度恒定所需的所述补偿电压的值;以及
根据所述可拉伸显示面板的在不同拉伸量下保持发光亮度恒定所需的所述补偿电压的值生成补偿电压参考表。
17.一种计算机可读存储介质,其中存储有计算机指令,当所述指令被处理器执行时实现以下步骤:
获取可拉伸显示面板的拉伸量;
根据可拉伸显示面板的拉伸量生成补偿电压;以及
将所述补偿电压向所述可拉伸显示面板的电压补偿层输出以减小或消除可拉伸显示面板的拉伸量造成的晶体管的阈值电压的偏移,所述电压补偿层位于所述晶体管和所述可拉伸显示面板的衬底基板之间。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911003295.7A CN110706655B (zh) | 2019-10-21 | 2019-10-21 | 可拉伸显示面板、晶体管的阈值电压的补偿方法及计算机可读存储介质 |
PCT/CN2020/121821 WO2021078089A1 (zh) | 2019-10-21 | 2020-10-19 | 可拉伸显示面板、晶体管的阈值电压的补偿方法及计算机可读存储介质 |
US17/414,126 US11580888B2 (en) | 2019-10-21 | 2020-10-19 | Stretchable display panel, method for compensating threshold voltage of transistor and computer readable storage medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911003295.7A CN110706655B (zh) | 2019-10-21 | 2019-10-21 | 可拉伸显示面板、晶体管的阈值电压的补偿方法及计算机可读存储介质 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110706655A CN110706655A (zh) | 2020-01-17 |
CN110706655B true CN110706655B (zh) | 2021-03-30 |
Family
ID=69201980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911003295.7A Active CN110706655B (zh) | 2019-10-21 | 2019-10-21 | 可拉伸显示面板、晶体管的阈值电压的补偿方法及计算机可读存储介质 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11580888B2 (zh) |
CN (1) | CN110706655B (zh) |
WO (1) | WO2021078089A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110706655B (zh) | 2019-10-21 | 2021-03-30 | 京东方科技集团股份有限公司 | 可拉伸显示面板、晶体管的阈值电压的补偿方法及计算机可读存储介质 |
CN111628105B (zh) * | 2020-06-04 | 2023-05-26 | 京东方科技集团股份有限公司 | 显示面板及其制备方法、显示基板及其制备方法和显示装置 |
CN111833818B (zh) * | 2020-07-08 | 2021-12-24 | 武汉华星光电半导体显示技术有限公司 | 柔性折叠屏及其阈值电压补偿方法和补偿装置 |
TWI745229B (zh) * | 2020-11-10 | 2021-11-01 | 友達光電股份有限公司 | 可拉伸顯示器的畫素亮度補償結構 |
CN113470560B (zh) * | 2021-06-30 | 2023-08-29 | 合肥维信诺科技有限公司 | 一种可拉伸显示面板及其亮度控制方法 |
KR20230011681A (ko) * | 2021-07-14 | 2023-01-25 | 삼성전자주식회사 | 유연 소자 및 전자 장치 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101693693B1 (ko) * | 2010-08-02 | 2017-01-09 | 삼성디스플레이 주식회사 | 화소 및 이를 이용한 유기전계발광 표시장치 |
DE102011004782A1 (de) * | 2011-02-25 | 2012-08-30 | Harting Kgaa | Ablösbare Mikro- und Nanobauteile für platzsparenden Einsatz |
KR102082779B1 (ko) * | 2013-04-16 | 2020-03-02 | 삼성디스플레이 주식회사 | 플렉서블 디스플레이 장치 및 그 제어 방법 |
KR102190140B1 (ko) * | 2014-09-15 | 2020-12-14 | 삼성디스플레이 주식회사 | 스트레쳐블 표시 장치 및 이의 휘도 보상 방법 |
KR102375895B1 (ko) * | 2015-01-07 | 2022-03-17 | 삼성디스플레이 주식회사 | 곡면형 표시 장치 |
KR102362883B1 (ko) * | 2015-04-29 | 2022-02-14 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102303602B1 (ko) * | 2015-09-14 | 2021-09-17 | 삼성디스플레이 주식회사 | 표시 장치 |
CN105679236B (zh) | 2016-04-06 | 2018-11-30 | 京东方科技集团股份有限公司 | 像素电路及其驱动方法、阵列基板、显示面板和显示装置 |
KR102626961B1 (ko) * | 2016-07-27 | 2024-01-17 | 엘지디스플레이 주식회사 | 하이브리드 타입의 박막 트랜지스터 및 이를 이용한 유기발광 표시장치 |
KR20180047242A (ko) * | 2016-10-31 | 2018-05-10 | 엘지디스플레이 주식회사 | 벤더블 표시패널 및 이를 이용한 벤더블 표시장치 |
KR20180072022A (ko) * | 2016-12-20 | 2018-06-29 | 삼성디스플레이 주식회사 | 표시 장치 |
CN207503616U (zh) * | 2017-10-31 | 2018-06-15 | 昆山国显光电有限公司 | 一种像素电路和显示装置 |
CN108010948B (zh) | 2017-11-30 | 2020-08-04 | 武汉天马微电子有限公司 | 柔性显示面板及其控制方法和显示装置 |
KR102602275B1 (ko) * | 2018-03-30 | 2023-11-14 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
CN108364602B (zh) * | 2018-04-24 | 2021-05-25 | 京东方科技集团股份有限公司 | 柔性显示面板、其制作方法和其光学补偿方法 |
CN108630663B (zh) | 2018-04-27 | 2019-11-05 | 京东方科技集团股份有限公司 | 阵列基板及其制备方法、应用和性能改善方法 |
CN108615019B (zh) * | 2018-04-28 | 2020-12-29 | 上海天马有机发光显示技术有限公司 | 一种显示面板及显示装置 |
KR102484880B1 (ko) * | 2018-06-08 | 2023-01-05 | 엘지디스플레이 주식회사 | 신축 가능한 표시장치, 패널 구동회로 및 구동방법 |
KR102595566B1 (ko) * | 2018-10-31 | 2023-10-27 | 엘지디스플레이 주식회사 | 스트레쳐블 표시 장치 |
CN110164340B (zh) * | 2018-12-06 | 2021-01-26 | 京东方科技集团股份有限公司 | 补偿装置、显示屏、显示装置和补偿方法 |
CN110164364B (zh) * | 2018-12-07 | 2021-08-17 | 京东方科技集团股份有限公司 | 显示面板及其制作方法、显示装置 |
KR20200081945A (ko) * | 2018-12-28 | 2020-07-08 | 엘지디스플레이 주식회사 | 스트레쳐블 표시장치 |
CN109728064B (zh) * | 2019-01-08 | 2021-04-23 | 云谷(固安)科技有限公司 | 可拉伸显示面板及显示装置 |
CN109473057B (zh) * | 2019-01-15 | 2021-10-22 | 成都京东方光电科技有限公司 | 一种可拉伸显示面板、其显示方法及显示装置 |
CN110706655B (zh) * | 2019-10-21 | 2021-03-30 | 京东方科技集团股份有限公司 | 可拉伸显示面板、晶体管的阈值电压的补偿方法及计算机可读存储介质 |
-
2019
- 2019-10-21 CN CN201911003295.7A patent/CN110706655B/zh active Active
-
2020
- 2020-10-19 US US17/414,126 patent/US11580888B2/en active Active
- 2020-10-19 WO PCT/CN2020/121821 patent/WO2021078089A1/zh active Application Filing
Also Published As
Publication number | Publication date |
---|---|
US11580888B2 (en) | 2023-02-14 |
CN110706655A (zh) | 2020-01-17 |
US20220068177A1 (en) | 2022-03-03 |
WO2021078089A1 (zh) | 2021-04-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN110706655B (zh) | 可拉伸显示面板、晶体管的阈值电压的补偿方法及计算机可读存储介质 | |
US11361712B2 (en) | Pixel circuit, driving method thereof, and display device | |
JP6262845B2 (ja) | 画素ユニット回路及びその補償方法、並びに表示装置 | |
US10438532B2 (en) | Display apparatus and method of manufacturing display apparatus with branch source wirings | |
US20170186782A1 (en) | Pixel circuit of active-matrix light-emitting diode and display panel having the same | |
US9959812B2 (en) | Method of compensating AMOLED power supply voltage drop | |
US9356088B2 (en) | Active matrix organic light-emitting diode display substrate and display device | |
US20190156747A1 (en) | Hybrid compensation circuit and method for oled pixel | |
US20170200414A1 (en) | Pixel Circuit and Method for Driving the Same, Display Apparatus | |
US20180102095A1 (en) | Amoled pixel driving circuit and pixel driving method | |
US20170039942A1 (en) | Amoled pixel driving circuit and pixel driving method | |
US20170116919A1 (en) | Pixel circuit and driving method thereof, display device | |
US20190237019A1 (en) | Capacitor detection method and pixel driving circuit | |
US20160365031A1 (en) | Pixel circuit, method for driving pixel circuit and display apparatus | |
CN106920825B (zh) | 显示装置及显示装置的制造方法 | |
US20160314740A1 (en) | Amoled pixel driving circuit and pixel driving method | |
JP2016075836A (ja) | 画素回路、その駆動方法及び表示装置 | |
US10553159B2 (en) | Pixel circuit, display panel and display device | |
US10977992B2 (en) | Circuit drive compensation method, circuit drive method and device, and display device | |
JP2016062076A (ja) | 画素回路、その駆動方法及び表示装置 | |
CN114093320A (zh) | 像素电路、像素驱动方法及显示装置 | |
WO2020177258A1 (zh) | 像素驱动电路及显示面板 | |
US20180350307A1 (en) | Light-emitting diode display panel and driving method thereof | |
US20210027709A1 (en) | Display device | |
US10984724B2 (en) | Pixel compensation circuit and OLED display device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |