WO2020108743A1 - Source de dépôt pour déposer un matériau évaporé, appareil de dépôt et procédés associés - Google Patents

Source de dépôt pour déposer un matériau évaporé, appareil de dépôt et procédés associés Download PDF

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Publication number
WO2020108743A1
WO2020108743A1 PCT/EP2018/082796 EP2018082796W WO2020108743A1 WO 2020108743 A1 WO2020108743 A1 WO 2020108743A1 EP 2018082796 W EP2018082796 W EP 2018082796W WO 2020108743 A1 WO2020108743 A1 WO 2020108743A1
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WO
WIPO (PCT)
Prior art keywords
evaporated
deposition
outlets
measurement
main
Prior art date
Application number
PCT/EP2018/082796
Other languages
English (en)
Inventor
Srinivas Salugu
Andreas MÜLLER
Sebastian Franke
Andreas Lopp
Uwe Schüssler
Julian AULBACH
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Priority to PCT/EP2018/082796 priority Critical patent/WO2020108743A1/fr
Priority to CN201880098803.1A priority patent/CN112912533B/zh
Priority to KR1020217012067A priority patent/KR102662181B1/ko
Publication of WO2020108743A1 publication Critical patent/WO2020108743A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C23C14/546—Controlling the film thickness or evaporation rate using measurement on deposited material using crystal oscillators

Definitions

  • Embodiments of the present disclosure relate to deposition sources for depositing evaporated material, particularly for co-deposition of two or more different evaporated materials.
  • deposition sources including deposition rate measurement devices for measuring individual deposition rates of two or more different evaporated materials, e.g. inorganic or organic materials used for display production, e.g. organic light-emitting diodes (OLEDs) or other display devices.
  • deposition apparatuses having a deposition source with a deposition rate measurement device and methods for measuring individual deposition rates of two or more different evaporated materials.
  • OLEDs are a special type of light-emitting diode in which the emissive layer comprises a thin-film of certain organic compounds.
  • Organic light emitting diodes (OLEDs) are used in the manufacture of television screens, computer monitors, mobile phones, other hand-held devices, etc., for displaying information. OLEDs can also be used for general space illumination. The range of colors, brightness and viewing angles possible with OLED displays is greater than that of traditional LCD displays, because OLED pixels directly emit light and do not involve a back light. Therefore, the energy consumption of OLED displays is considerably less than that of traditional LCD displays. Further, the fact that OLEDs can be manufactured onto flexible substrates results in further applications.
  • the functionality of an OLED depends on the coating thickness of the organic material. This thickness has to be within a predetermined range.
  • the deposition rate at which the coating with organic and electrode material occurs is controlled to lie within a predetermined tolerance range. In other words, the deposition rate of an organic or metal evaporator has to be controlled thoroughly in the production process.
  • a deposition source for depositing evaporated material a deposition apparatus for applying material to a substrate, and a method of measuring a first deposition rate of an evaporated first material and a second deposition rate of an evaporated second material according to the independent claims are provided. Further aspects, advantages, and features are apparent from the dependent claims, the description, and the accompanying drawings. [0007] A deposition source for depositing evaporated material is provided.
  • the deposition source includes a distribution arrangement having a two or more of outlets in one or more walls for providing an evaporated first material and an evaporated second material, a measurement assembly for measuring a first deposition rate of the evaporated first material and for measuring a second deposition rate of the evaporated second material, and a separation element for separating the evaporated first material and the evaporated second material, the separation element being arranged in a path between one or more walls and the measurement assembly.
  • a deposition source for depositing evaporated material includes a distribution arrangement having a plurality of outlets for providing an evaporated first material and an evaporated second material in a main deposition direction. Additionally, the deposition source includes a measurement assembly for measuring a first deposition rate of the evaporated first material and for measuring a second deposition rate of the evaporated second material. The measurement assembly has a main detection direction being in a cross direction to the main deposition direction. Further, the deposition source includes a separation element for separating the evaporated first material and the evaporated second material in a cross direction to the main detection direction. The separation element is arranged in the main detection direction between the plurality of outlets and the measurement assembly.
  • a deposition source for co-deposition of a first material and a second material.
  • the deposition source includes a first deposition assembly having a first evaporation crucible for evaporating the first material. Additionally, the first deposition assembly has a first distribution pipe having a first plurality of outlets provided along a length of the first distribution pipe for providing the first evaporated material in a first deposition direction. The first distribution pipe is in fluid communication with the first evaporation crucible. Further, the deposition source includes a second deposition assembly having a second evaporation crucible for evaporating the second material.
  • the second deposition assembly includes a second distribution pipe having a second plurality of outlets provided along a length of the second distribution pipe for providing the second evaporated material in a second deposition direction.
  • the first deposition direction and the second deposition direction are inclined towards each other.
  • the deposition source includes a measurement assembly having a first measurement device for measuring a first deposition rate of the evaporated first material and a second measurement device for measuring a second deposition rate of the evaporated second material.
  • a first main detection direction of the first measurement device is in a cross direction to the first deposition direction and a second main detection direction of the second measurement device is in a cross direction to the second deposition direction.
  • the deposition source includes a separation element for separating the evaporated first material and the evaporated second material in front of the measurement assembly.
  • the separation element has a first passage extending in the first main detection direction for guiding the first evaporated material to the first measurement device and a second passage extending in the second main detection direction for guiding the second evaporated material to the second measurement device.
  • a deposition apparatus for applying material to a substrate in a vacuum chamber at a deposition rate.
  • the deposition apparatus includes at least one deposition source according to any embodiments described herein.
  • a method of manufacturing an electronic device having a co-deposited layer of a first material and a second material includes using a deposition source according to any embodiments described herein.
  • a method of measuring a first deposition rate of an evaporated first material and a second deposition rate of an evaporated second material includes depositing the evaporated first material and the evaporated second material in a main deposition direction. Additionally, the method includes separating the evaporated first material and the evaporated second material in a cross direction to a main detection direction of a measurement assembly for measuring the first deposition rate and the second deposition rate. The main detection direction is in a cross direction to the main deposition direction. Further, the method includes measuring the first deposition rate and the second deposition rate by using the measurement assembly.
  • Embodiments are also directed at apparatuses for carrying out the disclosed methods and include apparatus parts for performing the described method aspect. These method aspects may be performed by way of hardware components, a computer programmed by appropriate software, by any combination of the two or in any other manner. Furthermore, embodiments according to the disclosure are also directed at methods for operating the described apparatus. The methods for operating the described apparatus include method aspects for carrying out every function of the apparatus.
  • FIG. 1 shows a schematic view of a deposition source according to embodiments described herein;
  • FIG. 2A shows a schematic sectional view along line A-A shown in FIG. 1 of a deposition source according to embodiments described herein;
  • FIG. 2B shows a schematic sectional view along line B-B shown in FIG. 1 of a deposition source according to embodiments described herein;
  • FIGS. 3A and 3B show schematic views of embodiments of a separation element of a deposition source according to embodiments described herein;
  • FIG. 4 shows a schematic sectional view of a nozzle of a deposition source according to embodiments described herein
  • FIG. 5 shows a schematic view of a deposition source according to embodiments described herein including a shutter arrangement and a shielding device
  • FIG. 6 shows a schematic horizontal sectional view of a deposition source according to embodiments described herein including a shielding device
  • FIG. 7 shows a schematic view of a deposition apparatus according to embodiments described herein.
  • FIG. 8 shows a flowchart for illustrating a method of measuring a first deposition rate of an evaporated first material and a second deposition rate of an evaporated second material according to embodiments described herein.
  • the deposition source includes a distribution arrangement 110 having a plurality of outlets 111 for providing an evaporated first material A and an evaporated second material B in a main deposition direction 101.
  • the evaporated first material A is a different material than the evaporated second material B.
  • the first material A can be a first inorganic material, e.g. a metal such as silver (Ag)
  • the second material B can be a second inorganic material, e.g. a metal such as magnesium (Mg).
  • first material A can be a first organic material, particularly suitable for OLED production
  • second material B can be a second organic material, particularly suitable for OLED production.
  • first material A can be an organic material
  • the second material B can be an inorganic material, or vice versa.
  • the inorganic material can be a material selected form the group consisting of Ag, Mg, CS2CO3, CsF, LiF and M0O3.
  • the deposition source 100 includes a measurement assembly for measuring a first deposition rate of the evaporated first material A and for measuring a second deposition rate of the evaporated second material B.
  • a main detection direction 102 of the measurement assembly is in a cross direction to the main deposition direction 10F
  • the lateral direction 103 is indicated.
  • the deposition source 100 includes a separation element 130 for separating the evaporated first material A and the evaporated second material B in a cross direction to the main detection direction 102.
  • the separation element 130 is arranged in the main detection direction 102 between the plurality of outlets 111 and the measurement assembly 120.
  • the separation element 130 is arranged in front of the measurement assembly 120.
  • embodiments of the deposition source of the present disclosure are provided with an improved deposition rate measurement system.
  • embodiments of the deposition source as described herein beneficially provide for measuring individual deposition rates of a first evaporated material and a second evaporated material during co-deposition. Accordingly, during co deposition, the individual deposition rates can separately and simultaneously be measured such that the sensitivity and the accuracy of the deposition rate measurement can be improved. As a result, the quality of co-deposited layers or structures on a substrate can be improved.
  • a“deposition source for depositing evaporated material” can be understood as an arrangement providing the evaporated material to be deposited on a substrate.
  • the deposition source may also be referred to as evaporation source.
  • the evaporation source may be configured to direct an evaporated material to be deposited on a substrate into a deposition area in a vacuum chamber.
  • the evaporated material may be directed toward the substrate via a plurality of outlets, e.g. nozzles, of the evaporation source.
  • the plurality of outlets are directed toward the deposition area, particularly toward the substrate to be coated.
  • the term“evaporated material” may be understood as a material that is evaporated and deposited on a surface of a substrate.
  • the evaporated material may be an inorganic material or an organic material that is deposited on a substrate to form an optically active layer of a display device, e.g. an OLED device.
  • the material may be deposited as a continuous layer or in a predetermined pattern, e.g. by using a mask such as a fine metal mask (FMM) having a plurality of openings for creating a plurality of pixels on the substrate.
  • FMM fine metal mask
  • Examples of evaporated materials include one or more of the following: metals such as silver, magnesium, aluminum, calcium, barium, gold, ytterbium, cesium or other materials such as ITO, NPD, Alq3, and Quinacridone.
  • a“distribution arrangement” can be understood as an arrangement for guiding and distributing the evaporated material.
  • the“distribution arrangement” may include one or more distribution pipes being in fluid connection with one or more evaporation crucibles, respectively.
  • the distribution arrangement may include two or three distribution pipes which extend in an essentially vertical direction, respectively.
  • Each distribution pipe may be in fluid connection with a respective evaporation crucible such that different materials, e.g. a first material A and/or a second material B and/or a third material C, can be co-deposited on the substrate.
  • Outlets of a first distribution pipe and outlets of an adjacent second distribution pipe and/or outlets of an adjacent third distribution pipe may be arranged close to each other, e.g. at a distance of 5 cm or less.
  • the distribution arrangement as described herein, the measurement assembly as described herein, and the separation element as described herein may be adapted accordingly.
  • the deposition source may include a third deposition assembly having a third evaporation crucible for evaporating the third material C and a third distribution pipe having a third plurality of outlets provided along a length of the third distribution pipe for providing the evaporated third material in a third deposition direction.
  • the third distribution pipe is in fluid communication with the third evaporation crucible.
  • the third deposition direction can be inclined with respect to the first deposition direction and/or the second deposition direction.
  • the measurement assembly can have a third measurement device, particularly a third oscillation crystal, for measuring a third deposition rate of the evaporated third material C.
  • the separation element can be configured for separating the evaporated first material A, the evaporated second material B, and the evaporated third material C in front of the measurement assembly 120.
  • the separation element may have a first passage extending in the first main detection direction for guiding the first evaporated material A to the first measurement device.
  • the separation element may have a second passage extending in the second main detection direction for guiding the evaporated second material B to the second measurement device.
  • the separation element may have a third passage extending in the third main detection direction for guiding the evaporated third material C to the third measurement device.
  • the third material C can be an organic or inorganic material as described for the first material A and the second material B herein.
  • A“distribution pipe” as described herein may guide the evaporated material from an evaporation crucible to the plurality of outlets, particularly a plurality of nozzles, which may extend through a side wall of the distribution pipe.
  • at least two or more of the plurality of outlets typically include at least two or more nozzles, each nozzle including a nozzle outlet for emitting a plume of evaporated material toward the substrate.
  • the distribution pipe may be a linear distribution pipe extending in a longitudinal direction, particularly in an essentially vertical direction.
  • the distribution pipe may include a pipe having a sectional shape of a cylinder.
  • the cylinder may have a circular bottom shape or any other suitable bottom shape, e.g. an essentially triangular bottom shape.
  • the distribution pipe may have an essentially triangular sectional shape.
  • a “main deposition direction” can be understood as a main emission direction of evaporated material emitted through the plurality of outlets.
  • the main deposition direction may correspond to a central axis of the outlets, particularly a central nozzle axis.
  • a“measurement assembly” for measuring a first deposition rate and a second deposition rate can be understood as an assembly having a first deposition rate measurement device and a second deposition rate measurement device.
  • the measurement assembly is configured for separately measuring a first deposition rate, e.g. of an evaporated first material A, and a second deposition rate, e.g. of an evaporated second material B.
  • a “main detection direction” of the measurement assembly can be understood as the direction at which an evaporated material can be detected, particularly with high sensitivity and high accuracy.
  • the main detection direction 102 is typically in a cross-direction to the main deposition direction 101. More specifically, the main detection direction can be substantially perpendicular to the main deposition direction.
  • the main deposition direction can be a substantially horizontal direction and the main detection direction can be a substantially vertical direction.
  • a “vertical direction” is considered as a direction substantially parallel to the direction along which the force of gravity extends.
  • A“substantially vertical direction” can be understood as a direction deviating from exact verticality (the latter being defined by the gravitational force) by an angle of, e.g., up to ⁇ 15 degrees.
  • a“substantially horizontal direction” can be understood as a direction deviating from exact horizontality by an angle of, e.g., up to ⁇ 15 degrees.
  • a“separation element” can be understood as an element configured for separating an evaporated first material A and an evaporated second material B from each other.
  • the separation element is arranged in front of the measurement assembly in the main detection direction. Accordingly, beneficially individual deposition rates of the first material and the second material can be measured separately by the measurement assembly.
  • a further advantage of providing a separation element as described herein is that the individual deposition rates of the first material and the second material can be measured simultaneously.
  • the measurement assembly 120 and the separation element 130 are arranged outside the distribution arrangement 110.
  • the measurement assembly 120 and the separation element 130 can be provided before one or more walls of the distribution arrangement 110.
  • the measurement assembly 120 and the separation element 130 can be provided before a front wall of the distribution arrangement 110.
  • the front wall of the distribution arrangement 110 is a substantially vertical wall 115 of the distribution arrangement 110.
  • the front wall of the distribution arrangement 110 includes the plurality of outlets 111.
  • the separation element 130 includes a partition wall 133 extending in the main detection direction 102.
  • the partition wall 133 is configured for separating the evaporated first material A and the evaporated second material B from each other. Accordingly, the evaporated first material A and the evaporated second material B can be detected separately from each other by the measurement assembly.
  • the separation element 130 includes a first passage 131 for the first evaporated material A and a second passage 132 for the second evaporated material B, as exemplarily shown in FIGS. 3A and 3B.
  • each of the first passage 131 and the second passage 132 has a passage inlet 134 and a passage outlet 135.
  • the first passage 131 and/or the second passage 132 of the separation element 130 may have an open side.
  • the separation element 130 can be mounted to a shielding device 150. Accordingly, when the separation element 130 is mounted to the shielding device 150, the open side of the first passage 131 and/or the second passage 132 is closed by a wall of shielding device 150.
  • the plurality of outlets 111 include a first group 111 A of outlets arranged in a first row and a second group 11 IB of outlets arranged in a second row substantially parallel to the first row.
  • the term“substantially parallel” may be understood as a direction or orientation having a deviation angle Dy from exact parallelism of Dy ⁇ ⁇ 15°, particularly Dy ⁇ ⁇ 10°, more particularly Dy ⁇ ⁇ 5°.
  • the plurality of outlets include one or more nozzles.
  • the plurality of outlets may include one or more nozzles 112 having a main nozzle opening 113 in the main deposition direction and an additional opening 114 for directing evaporated material, e.g. the evaporated first material A or the evaporated second material B, towards the measurement assembly.
  • Fig. 4 shows a schematic sectional view of such a nozzle.
  • typically one or more outlets of the first group 111A of outlets close to the separation element 130 and/or one or more outlets of the second group 11 IB of outlets close to the separation element 130 include the additional opening 114.
  • the one or more outlets of the first group 111 A of outlets close to the separation element 130 can be two, three or four subsequent outlets provided at the upper end of the first group 111 A of outlets.
  • the one or more outlets of the second group 11 IB of outlets close to the separation element 130 can be two, three or four subsequent outlets provided at the upper end of the second group 11 IB of outlets.
  • the closest outlet of the first group 111A of outlets with respect to the first passage 131 of the separation element 130 typically includes the additional opening 114.
  • the closest outlet of the second group 11 IB of outlets with respect to the second passage 132 of the separation element 130 typically includes the additional opening 114. Accordingly, beneficially the measurement of deposition rates can be improved.
  • the additional opening 114 typically extends in a cross direction to the main deposition direction 101.
  • the additional opening 114 may be inclined with respect to the main deposition direction 101.
  • the additional opening 114 may extend substantially perpendicular to the main deposition direction 101. In other words, the additional opening 114 may extend in a substantially vertical direction.
  • the measurement assembly 120 includes a first measurement device 121, particularly a first oscillation crystal, having a first measurement surface 123 for measuring the first deposition rate. Additionally, the measurement assembly 120 includes a second measurement device 122, particularly a second oscillation crystal, having a second measurement surface 124 for measuring the second deposition rate. As exemplarily shown in FIGS. 2 A and 2B, the first measurement surface 123 and the second measurement surface 124 are substantially perpendicular to the main deposition direction 101. [0037] With exemplary reference to FIG.
  • the deposition source 100 further includes a shutter arrangement 140 provided in the main detection direction 102 between the separation element 130 and the measurement assembly 120.
  • the shutter arrangement 140 typically includes a first movable shutter 141 and/or a second movable shutter 142.
  • the first movable shutter 141 may be configured for blocking the evaporated first material A provided through the first passage 131 of the separation element 130 towards the first measurement device 121, particularly the first oscillation crystal.
  • the second movable shutter 142 may be configured for blocking the evaporated second material B provided through the second passage 132 of the separation element 130 towards the second measurement device 122, particularly the second oscillation crystal. Accordingly, in between deposition rate measurements, the first measurement device and/or the second measurement device may be protected from evaporated material which can be beneficial for the overall lifetime of the measurement devices.
  • the deposition source 100 further includes a shielding device 150 for lateral delimitation of the evaporated first material A and the evaporated second material B provided through the plurality of outlets 111.
  • the shielding device 150 typically includes vertical side elements 151 configured for blocking evaporated material in a lateral cross direction to the main deposition direction 101.
  • the vertical side elements 151 may also be referred to as shaper shield segments. Accordingly, it is to be understood that shaper shield segments are configured for blocking evaporated material depending on the emission angle of the plume of evaporated source material from the plurality of outlets in a plane parallel to the length direction of the deposition source.
  • the shielding device 150 is configured to block evaporated material of a plume of evaporated material having a predetermined emission angle ⁇ , e.g. greater than 30°, in particular greater than 40°, from a main deposition direction of the evaporated material from the plurality of outlets.
  • the first group 111 A of outlets may have a first deposition direction 101 A and the second group 11 IB of outlets may have a second deposition direction 101B.
  • the first deposition direction 101 A and the second deposition direction 10 IB can be inclined towards each other.
  • the shielding device 150 may include a shielding wall 155 provided between vertical side elements 151, particularly in the middle of the vertical side elements 151.
  • the shielding wall 155 may be provided between the first group 111A of outlets and the second group 11 IB of outlets. Accordingly, beneficially intermixing of the evaporated first material A and the evaporated second material B directly after the exit of the first group 111 A of outlets and the exit of the second group 11 IB of outlets can be prevented.
  • the shielding device 150 is connected to a substantially vertical wall 115 of the distribution arrangement 110.
  • the substantially vertical wall 115 includes the plurality of outlets 111, e.g. the first group 111 A of outlets and the second group 11 IB of outlets.
  • the measurement assembly 120 is arranged above the shielding device 150.
  • the measurement assembly 120 in the vertical direction the measurement assembly 120 is arranged in a plane above the shielding device 150.
  • the separation element 130 may be arranged between the substantially vertical side elements 151 of the shielding device 150, as shown in FIG. 5.
  • separation element 130 can be attached to the shielding device 150.
  • the deposition source 100 can be understood as a deposition source for co-deposition of a first material A and a second material B.
  • the deposition source 100 includes a first deposition assembly 161 having a first evaporation crucible 171 for evaporating the first material A.
  • the first deposition assembly 161 includes a first distribution pipe 181 having a first group 111A of outlets provided along a length of the first distribution pipe 181 for providing the first evaporated material A in a first deposition direction 101 A.
  • the first distribution pipe 181 is in fluid communication with the first evaporation crucible 171.
  • the deposition source 100 includes a second deposition assembly 162 having a second evaporation crucible 172 for evaporating the second material B. Additionally, the second deposition assembly 162 includes a second distribution pipe 182 having a second group 11 IB of outlets provided along a length of the second distribution pipe 182 for providing the second evaporated material B in a second deposition direction 10 IB. Typically, the first deposition direction 101 A and the second deposition direction 101B are inclined towards each other, as exemplarily shown in FIG. 6.
  • an“evaporation crucible” can be understood as a device having a reservoir for the material to be evaporated by heating the crucible.
  • a “crucible” can be understood as a source material reservoir which can be heated to vaporize the source material into a gas by at least one of evaporation and sublimation of the source material.
  • the crucible includes a heater to vaporize the source material in the crucible into a gaseous source material.
  • the material to be evaporated can be in the form of a powder.
  • the reservoir can have an inner volume for receiving the source material to be evaporated, e.g. an organic material.
  • the volume of the crucible can be between 100 cm 3 and 3000 cm 3 , particularly between 700 cm 3 and 1700 cm 3 , more particularly 1200 cm 3 .
  • the crucible may include a heating unit configured for heating the source material provided in the inner volume of the crucible up to a temperature at which the source material evaporates.
  • the crucible may be a crucible for evaporating organic or metal materials, e.g. organic materials having an evaporation temperature of about 100°C to about 600°C or metals having an evaporation temperature of about 300°C to about 1500°C.
  • the deposition source 100 includes a measurement assembly 120 having a first measurement device 121, particularly a first oscillation crystal, for measuring a first deposition rate of the evaporated first material A. Additionally, the measurement assembly 120 can include a second measurement device 122, particularly a second oscillation crystal, for measuring a second deposition rate of the evaporated second material B.
  • a first main detection direction 102 A of the first measurement device 121 is in a cross direction to the first deposition direction 101 A.
  • a second main detection direction 102B of the second measurement device 122 is in a cross direction to the second deposition direction 101B.
  • an “oscillation crystal” for measuring a deposition rate may be understood as an oscillation crystal for measuring a change in mass due to deposited material on the oscillation crystal per unit area by measuring the change in frequency of an oscillation crystal resonator.
  • an oscillation crystal may be understood as a quartz crystal resonator.
  • an oscillation crystal for measuring a deposition rate may be understood as a quartz crystal microbalance (QCM).
  • the deposition source 100 includes a separation element 130 for separating the evaporated first material A and the evaporated second material B in front of the measurement assembly 120.
  • the separation element 130 has a first passage 131 extending in the first main detection direction 102 A for guiding the first evaporated material A to the first measurement device 121, particularly the first oscillation crystal.
  • the separation element 130 has a second passage 132 extending in the second main detection direction 102B direction for guiding the second evaporated material B to the second measurement device 122, particularly the second oscillation crystal.
  • FIG. 7 shows a schematic top view of a deposition apparatus 200 for applying material to a substrate 222 in a vacuum chamber 210 at a deposition rate according to embodiments described herein.
  • the deposition apparatus 200 includes a deposition source 100 according to any embodiments herein.
  • the deposition source 100 may be provided in the vacuum chamber 210 of the deposition apparatus 200, for example on a track, e.g. a linear guide 220 or a looped track.
  • the track or the linear guide 220 may be configured for a translational movement of the deposition source 100.
  • a drive for the translational movement can be provided for the deposition source 100 at the linear guide 220 within the vacuum chamber 210.
  • a first valve 205 for example a gate valve, may be provided which allows for a vacuum seal to an adjacent vacuum chamber (not shown in FIG. 7). The first valve can be opened for transport of a substrate 222 or a mask 232 into the vacuum chamber 210 or out of the vacuum chamber 210.
  • a further vacuum chamber such as a maintenance vacuum chamber 211 may be provided adjacent to the vacuum chamber 210, as exemplarily shown in FIG. 7. Accordingly, the vacuum chamber 210 and the maintenance vacuum chamber 211 may be connected with a second valve 207.
  • the second valve 207 may be configured for opening and closing a vacuum seal between the vacuum chamber 210 and the maintenance vacuum chamber 211.
  • the deposition source 100 can be transferred to the maintenance vacuum chamber 211 while the second valve 207 is in an open state. Thereafter, the second valve 207 can be closed to provide a vacuum seal between the vacuum chamber 210 and the maintenance vacuum chamber 211. If the second valve 207 is closed, the maintenance vacuum chamber 211 can be vented and opened for maintenance of the deposition source 100 without breaking the vacuum in the vacuum chamber 210.
  • two substrates may be supported on respective transportation tracks within the vacuum chamber 210. Further, two tracks for providing masks thereon can be provided. Accordingly, during coating, the substrate can be masked by respective masks.
  • the mask may be provided in a mask frame 231 to hold the mask 232 in a predetermined position.
  • the substrate 222 may be supported by a substrate support 226, which can be connected to an alignment unit 212.
  • the alignment unit 212 may adjust the position of the substrate 222 with respect to the mask 232.
  • the substrate support 226 may be connected to the alignment unit 212. Accordingly, the substrate may be moved relative to the mask 232 in order to provide for a proper alignment between the substrate and the mask during deposition of the material, which may be beneficial for high quality display manufacturing.
  • the mask 232 and/or the mask frame 231 holding the mask 232 can be connected to the alignment unit 212. Accordingly, either the mask 232 can be positioned relative to the substrate 222 or the mask 232 and the substrate 222 can both be positioned relative to each other.
  • the linear guide 220 may provide a direction of the translational movement of the deposition source 100.
  • a mask 232 may be provided on both sides of the deposition source 100.
  • the masks may extend essentially parallel to the direction of the translational movement.
  • the substrates at the opposing sides of the deposition source 100 can also extend essentially parallel to the direction of the translational movement.
  • the deposition source 100 provided in the vacuum chamber 210 of the deposition apparatus 200 may include a support 252 which may be configured for the translational movement along the linear guide 220.
  • the support 252 may support two evaporation crucibles and two distribution pipes, provided over the respective evaporation crucible.
  • the support 252 may support three or more evaporation crucibles and three or more distribution pipes provided over the respective evaporation crucible. Accordingly, the vapor generated in the evaporation crucible can move upwardly and out of the one or more outlets of the distribution pipe.
  • the distribution pipes of the deposition source may have a substantially triangular cross-section. A triangular shape of the distribution pipe makes it possible to bring the outlets for depositing the evaporated material on a substrate, e.g. nozzles, of neighboring distribution pipes as close as possible to each other. This allows for achieving an improved mixture of different materials from different distribution pipes, e.g. for the case of the co-evaporation of two, three or even more different materials.
  • the method 300 includes depositing (represented by block 310 in FIG. 8) the evaporated first material A and the evaporated second material B in a main deposition direction 101, particularly by using a deposition source as described herein.
  • the method 300 includes separating (represented by block 320 in FIG. 8) the evaporated first material A and the evaporated second material B in a cross direction to a main detection direction 102 of a measurement assembly 120 for measuring the first deposition rate and the second deposition rate.
  • the main detection direction 102 is in a cross direction to the main deposition direction.
  • separating the evaporated first material A and the evaporated second material B from each other may include using a separation element 130 as described herein. More specifically, separating the evaporated first material A and the evaporated second material B from each other may include guiding the evaporated first material A through a first passage 131 of the separation element 130 and guiding the evaporated second material B through a second passage 132 of the separation element 130.
  • the method 300 includes measuring (represented by block 330 in FIG. 8) the first deposition rate and the second deposition rate by using the measurement assembly 120.
  • the measurement assembly 120 is a measurement assembly according to embodiments described herein.
  • an improved deposition source compared to the state of the art, an improved deposition apparatus as well as an improved method of measuring individual deposition rates during co- deposition of an evaporated first material and an evaporated second material are provided.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne une source de dépôt pour déposer un matériau évaporé. La source de dépôt (100) comprend un agencement de distribution (110) ayant une pluralité de sorties (111) pour fournir un premier matériau évaporé (A) et un deuxième matériau évaporé (B) dans une direction de dépôt principale (101). En outre, la source de dépôt comprend un ensemble de mesure (120) pour mesurer un premier taux de dépôt du premier matériau évaporé (A) et pour mesurer un deuxième taux de dépôt du deuxième matériau évaporé (B). L'ensemble de mesure (120) a une direction de détection principale (102) qui est dans une direction transversale par rapport à la direction de dépôt principale (101). En outre, la source de dépôt (100) comprend un élément de séparation (130) pour séparer le premier matériau évaporé (A) et le deuxième matériau évaporé (B) dans une direction transversale par rapport à la direction de détection principale (102). L'élément de séparation (130) est agencé dans la direction de détection principale (102) entre la pluralité de sorties (111) et l'ensemble de mesure (120).
PCT/EP2018/082796 2018-11-28 2018-11-28 Source de dépôt pour déposer un matériau évaporé, appareil de dépôt et procédés associés WO2020108743A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
PCT/EP2018/082796 WO2020108743A1 (fr) 2018-11-28 2018-11-28 Source de dépôt pour déposer un matériau évaporé, appareil de dépôt et procédés associés
CN201880098803.1A CN112912533B (zh) 2018-11-28 2018-11-28 用于沉积蒸发的材料的沉积源、沉积装置及其方法
KR1020217012067A KR102662181B1 (ko) 2018-11-28 2018-11-28 증발 재료를 증착하기 위한 증착 소스, 증착 장치, 및 이를 위한 방법들

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