WO2020107696A1 - 显示面板及触控显示装置 - Google Patents

显示面板及触控显示装置 Download PDF

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Publication number
WO2020107696A1
WO2020107696A1 PCT/CN2019/073057 CN2019073057W WO2020107696A1 WO 2020107696 A1 WO2020107696 A1 WO 2020107696A1 CN 2019073057 W CN2019073057 W CN 2019073057W WO 2020107696 A1 WO2020107696 A1 WO 2020107696A1
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Prior art keywords
layer
electrode layer
pixel electrode
common electrode
display area
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Ceased
Application number
PCT/CN2019/073057
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English (en)
French (fr)
Inventor
李邦荣
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US16/348,155 priority Critical patent/US11215860B2/en
Publication of WO2020107696A1 publication Critical patent/WO2020107696A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133371—Cells with varying thickness of the liquid crystal layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133357—Planarisation layers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/134309—Electrodes characterised by their geometrical arrangement
    • G02F1/134318—Electrodes characterised by their geometrical arrangement having a patterned common electrode
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel

Definitions

  • the invention relates to the field of display technology, in particular to a display panel and a touch display device.
  • Existing touch screens can be divided into three types: add-on mode touch panel (On-Cell Touch Panel), on-cell touch panel (On-Cell Touch Panel), and in-cell touch panel (In-Cell Touch Panel).
  • the external touch screen is produced by separating the touch screen and the liquid crystal display (Liquid Crystal Display, LCD), and then bonding them together to form a liquid crystal display with touch function.
  • the production cost of the external touch screen is high, the light transmission rate is low, and the thickness of the module is thick.
  • the built-in touch screen embeds the touch electrodes of the touch screen inside the liquid crystal display, and has advantages in terms of lightness, thinness, and light transmittance. It is now widely used in high-end smartphones.
  • the existing in-cell touch display screen adds two layers of silicon nitride (SiNx) to the out-cell touch display screen to avoid interference between the touch signal and the driving signal in the display screen.
  • silicon nitride (SiNx) is provided above and below the metal layer in the display screen of the existing in-cell touch display screen to achieve a normal touch function.
  • SiNx silicon nitride
  • the addition of a two-layer silicon nitride (SiNx) structure results in a decrease in the light transmittance of the thin film transistors, which in turn reduces the light transmittance of the touch screen.
  • the metal layer (M3) in the display screen of the existing in-cell touch display screen is provided with silicon nitride (SiNx) above and below, respectively, so as to realize a normal touch control function.
  • SiNx silicon nitride
  • the addition of a two-layer silicon nitride (SiNx) structure results in a decrease in the light transmittance of the thin film transistors, which in turn reduces the light transmittance of the touch screen.
  • An object of the present invention is to provide a display panel and a touch display device, which can effectively improve the light transmittance and brightness of a thin film transistor substrate.
  • the present invention provides a display panel including a thin film transistor substrate, a flat layer is provided on the thin film transistor substrate and a via is opened in the flat layer, the via exposes the thin film transistor
  • the source and drain of the substrate are characterized in that a first intermediate layer, a metal circuit layer, a second intermediate layer, and a first common electrode layer are further stacked on one side of the via hole and corresponding to the source and drain
  • the first passivation layer and the first pixel electrode layer are stacked on the other side of the via hole with a second common electrode layer, a second passivation layer and a second pixel electrode layer, wherein the first common electrode A layer is electrically connected to the metal circuit layer, and the first pixel electrode layer is electrically connected to the second pixel electrode layer along the via hole;
  • the first intermediate layer, the metal circuit layer, the second intermediate layer, the first common electrode layer, the first passivation layer and the first pixel electrode layer are collectively defined as non-display
  • the area, the second common electrode layer, the second passivation layer, and the second pixel electrode layer are collectively defined as a display area.
  • the non-display area and the display area there is a step difference between the non-display area and the display area, and the flat layer of the non-display area and the display area are flush.
  • the first pixel electrode layer when the first pixel electrode layer is connected to the second pixel electrode layer along the via, the first pixel electrode layer and the first common electrode layer There is a gap between the second pixel electrode layer and the second common electrode layer.
  • the height of the first pixel electrode layer is higher than the height of the second pixel electrode layer, and the height of the first common electrode layer is higher than the height of the second common electrode layer.
  • the second intermediate layer is further provided with a through hole, and the first common electrode layer is connected to the metal circuit layer through the through hole.
  • the present invention also provides a display panel including a thin film transistor substrate, a flat layer is provided on the thin film transistor substrate and a via is opened in the flat layer, the via exposes the source and drain of the thin film transistor substrate It is characterized in that a first intermediate layer, a metal circuit layer, a second intermediate layer, a first common electrode layer, a first passivation layer and a first A pixel electrode layer, a second common electrode layer, a second passivation layer and a second pixel electrode layer are stacked on the other side of the via hole, wherein the first common electrode layer is electrically connected to the metal In the circuit layer, the first pixel electrode layer is electrically connected to the second pixel electrode layer along the via hole.
  • the first intermediate layer, the metal circuit layer, the second intermediate layer, the first common electrode layer, the first passivation layer, and the first pixel electrode layer Commonly defined as a non-display area, the second common electrode layer, the second passivation layer, and the second pixel electrode layer are collectively defined as a display area.
  • the non-display area and the display area there is a step difference between the non-display area and the display area, and the flat layer of the non-display area and the display area are flush.
  • the first pixel electrode layer when the first pixel electrode layer is connected to the second pixel electrode layer along the via, the first pixel electrode layer and the first common electrode layer There is a gap between the second pixel electrode layer and the second common electrode layer.
  • the height of the first pixel electrode layer is higher than the height of the second pixel electrode layer, and the height of the first common electrode layer is higher than the height of the second common electrode layer.
  • the second intermediate layer is further provided with a through hole, and the first common electrode layer is connected to the metal circuit layer through the through hole.
  • the thin film transistor substrate further includes a substrate, a low-temperature polysilicon layer, a buffer layer, an active layer, a gate insulating layer, a gate, a third intermediate layer, and the source and drain stacked in sequence
  • the third intermediate layer is disposed between the flat layer and the gate insulating layer.
  • the present invention further provides a touch display device including the display panel in the above embodiment.
  • the first intermediate layer, the metal circuit layer, the second intermediate layer, the first common electrode layer, the first passivation layer, and the first pixel electrode layer Commonly defined as a non-display area, the second common electrode layer, the second passivation layer, and the second pixel electrode layer are collectively defined as a display area, between the non-display area and the display area The level difference, and the flat layer of the non-display area and the display area are flush.
  • the first pixel electrode layer when the first pixel electrode layer is connected to the second pixel electrode layer along the via, the first pixel electrode layer and the first common electrode layer There is a gap between the second pixel electrode layer and the second common electrode layer.
  • the height of the first pixel electrode layer is higher than the height of the second pixel electrode layer, and the height of the first common electrode layer is higher than the height of the second common electrode layer.
  • the second intermediate layer is further provided with a through hole, and the first common electrode layer is connected to the metal circuit layer through the through hole.
  • the thin film transistor substrate further includes a substrate, a low-temperature polysilicon layer, a buffer layer, an active layer, a gate insulating layer, a gate, a third intermediate layer, and the source and drain stacked in sequence
  • the third intermediate layer is disposed between the flat layer and the gate insulating layer.
  • the touch display device is an in-cell touch display device.
  • the present invention also has the following effects. Since the display area does not have the first intermediate layer and the second intermediate layer, the brightness and light transmittance of the thin film transistor substrate (that is, the pixel opening area) can be improved, thereby improving The overall light transmittance and brightness of the display panel.
  • Figure 1 is a cross-sectional view of a preferred embodiment of the present invention
  • FIG. 2 is a top view of a preferred embodiment of the present invention.
  • Figure 3 is a side view of a preferred embodiment of the present invention.
  • the present invention provides a display panel 1 including a thin film transistor substrate 2.
  • a flat layer 3 is provided on the thin film transistor substrate 2 and a via 31 is opened in the flat layer 3.
  • the via 31 exposes the source and drain 28 of the thin film transistor substrate 2.
  • a first intermediate layer 41, a metal circuit layer 42, a second intermediate layer 43, a first common electrode layer 44, and a first passivation are also stacked on one side of the via 31 and corresponding to the source and drain 28 Layer 45 and the first pixel electrode layer 46.
  • a second common electrode layer 51, a second passivation layer 52 and a second pixel electrode layer 53 are stacked on the other side of the via 31.
  • the first common electrode layer 44 is electrically connected to the metal circuit layer 42
  • the first pixel electrode layer 46 is electrically connected to the second pixel electrode layer 53 along the via 31.
  • the first intermediate layer 41, the metal circuit layer 42, the second intermediate layer 43, the first common electrode layer 44, the first passivation The layer 45 and the first pixel electrode layer 46 are collectively defined as the non-display area 4.
  • the second common electrode layer 51, the second passivation layer 52 and the second pixel electrode layer 53 are collectively defined as the display area 5.
  • the height of the first pixel electrode layer 46 is higher than the height of the second pixel electrode layer 53, and the height of the first common electrode layer 44 is higher than the height of the second common electrode layer 51.
  • the display area 5 does not have the first intermediate layer 41 and the second intermediate layer 43, so that the height of the display area 5 is lower than that of the non-display area 4.
  • the light transmittance and brightness in the thin film transistor substrate 2 (that is, the pixel opening area) can be effectively improved.
  • the materials of the first intermediate layer 41 and the second intermediate layer 43 are the same and are preferably silicon nitride (SiNx).
  • the second intermediate layer 43 is further provided with through holes 431, and the first common electrode layer 44 is connected to the metal circuit layer 42 through the through holes 413.
  • the first pixel electrode layer 46 is connected to the second pixel electrode layer 53 along the via 31, the first pixel electrode layer 46 and the first common electrode layer 44 have a first gap 47.
  • the thin film transistor substrate 2 further includes a substrate 21, a low-temperature polysilicon layer 22, a buffer layer 23, an active layer 24, a gate insulating layer 25, a gate 26, and a third intermediate layer 27 which are sequentially stacked And the source and drain 28, wherein the above structure constitutes a thin film transistor 7 (TFT).
  • the third intermediate layer 27 is disposed between the flat layer 3 and the gate insulating layer 25. However, in the non-display area 5, the third intermediate layer 27 is provided between the source and drain 28 and the gate 26.
  • the present invention further provides a touch display device (not shown), including the display panel 1 described in the above embodiment.
  • the touch display device is preferably an in-cell touch display device (In-Cell Touch Display Device).
  • the non-display area 4 will correspond to the black matrix of the upper color filter (CF) (figure omitted), so light cannot penetrate.
  • the display area 5 corresponds to the pixel layer (not shown) of the upper color filter film, so light can penetrate, increasing light transmittance and brightness.
  • the two areas will delay the etching time by adjusting different etching process parameters, for example, adjusting the etching time from 30 seconds to 60 seconds, so by delaying the etching time for the display area 5 to 60 seconds, both the first intermediate layer 41 and the second intermediate layer 43 of the display area 5 will be etched away.
  • the display area 5 does not have the first intermediate layer 41 and the second intermediate layer 43, it is possible to effectively improve the single brightness and light transmittance of the thin film transistor substrate 2 (that is, the pixel opening area), thereby improving The overall light transmittance and brightness of the display panel 1/touch display device.

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  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
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  • General Engineering & Computer Science (AREA)
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  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板（1）及触控显示装置，其中显示面板（1），包括薄膜晶体管基板（2），薄膜晶体管基板（2）上设置有平坦层（3）并在平坦层（3）开设过孔（31），过孔（31）曝露薄膜晶体管基板（2）的源漏极（28），在过孔（31）的一侧并对应源漏极（28）上还叠设有第一中间层（41）、金属线路层（42）、第二中间层（43）、第一公共电极层（44）、第一钝化层（45）及第一像素电极层（46），在过孔（31）的另一侧则叠设有第二公共电极层（51）、第二钝化层（52）及第二像素电极层（53），其中第一公共电极层（44）电性连接金属线路层（42），第一像素电极层（46）沿着过孔（31）与第二像素电极层（53）电性连接。借此，有效提升薄膜晶体管基板的光穿透率及亮度。

Description

显示面板及触控显示装置 技术领域
本发明涉及一种显示技术领域，尤其是涉及一种显示面板及触控显示装置。
 背景技术
现有触摸屏按照组成结构可以分为外挂式触摸屏(Add-on Mode Touch Panel)、覆盖表面式触摸屏(On-Cell Touch Panel)以及内嵌式触摸屏(In-Cell Touch Panel)三种。外挂式触摸屏是将触摸屏与液晶显示屏(Liquid Crystal Display，LCD)分开生产，再贴合一起成为具有触摸功能的液晶显示屏。外挂式触摸屏制作成本高、光穿透率低、模组厚度厚。内嵌式触摸屏将触摸屏的触控电极内嵌在液晶显示屏内部，在产品轻薄化和透光率方面更有优势，现已广泛应用于中高端智能手机。
此外，现有的内嵌式触控显示屏比外挂式触控显示屏增加两层氮化硅(SiNx)，以避免触控信号与显示屏内驱动信号之间的干扰。具体而言，现有的内嵌式触控显示屏的显示屏中的金属层上下各设置有氮化硅(SiNx)，以实现正常的触控功能。然而增设了两层氮化矽(SiNx)的结构，造成薄膜晶体管单体光穿透率下降，进而也降低了触控显示屏的光穿透率。
 技术问题
现有的内嵌式触控显示屏的显示屏中的金属层(M3)上下各设置有氮化硅(SiNx)，以实现正常的触控功能。然而增设了两层氮化矽(SiNx)的结构，造成薄膜晶体管单体光穿透率下降，进而也降低了触控显示屏的光穿透率。
 技术解决方案
有鉴于此，有必要提供一种显示面板及触控显示装置，来解决现有技术所存在的问题。
本发明的目的在于提供一种显示面板及触控显示装置，有效提升薄膜晶体管基板的光穿透率及亮度。
为达成本发明的前述目的，本发明提供一种显示面板，包括薄膜晶体管基板，所述薄膜晶体管基板上设置有平坦层并在所述平坦层开设过孔，所述过孔曝露所述薄膜晶体管基板的源漏极，其特征在于，在所述过孔的一侧并对应所述源漏极上还叠设有第一中间层、金属线路层、第二中间层、第一公共电极层、第一钝化层及第一像素电极层，在所述过孔的另一侧则叠设有第二公共电极层、第二钝化层及第二像素电极层，其中所述第一公共电极层电性连接所述金属线路层，所述第一像素电极层沿着所述过孔与所述第二像素电极层电性连接；
其中，所述第一中间层、所述金属线路层、所述第二中间层、所述第一公共电极层、所述第一钝化层及所述第一像素电极层共同定义为非显示区域，所述第二公共电极层、所述第二钝化层及所述第二像素电极层则共同定义为显示区域。
根据本发明一实施例，所述非显示区域与所述显示区域之间具有段差，且所述非显示区域和所述显示区域的所述平坦层齐平。
根据本发明一实施例，所述第一像素电极层沿着所述过孔与所述第二像素电极层彼此连接时，所述第一像素电极层与所述第一公共电极层间具有第一间隙，所述第二像素电极层与所述第二公共电极层间具有一第二间隙。
根据本发明一实施例，所述第一像素电极层的高度高于所述第二像素电极层的高度，所述第一公共电极层的高度高于所述第二公共电极层的高度。
根据本发明一实施例，所述第二中间层还开设有穿孔，所述第一公共电极层通过所述穿孔与所述金属线路层连接。
本发明还提供一种显示面板，包括薄膜晶体管基板，所述薄膜晶体管基板上设置有平坦层并在所述平坦层开设过孔，所述过孔曝露所述薄膜晶体管基板的源漏极，其特征在于，在所述过孔的一侧并对应所述源漏极上还叠设有第一中间层、金属线路层、第二中间层、第一公共电极层、第一钝化层及第一像素电极层，在所述过孔的另一侧则叠设有第二公共电极层、第二钝化层及第二像素电极层，其中所述第一公共电极层电性连接所述金属线路层，所述第一像素电极层沿着所述过孔与所述第二像素电极层电性连接。
根据本发明一实施例，所述第一中间层、所述金属线路层、所述第二中间层、所述第一公共电极层、所述第一钝化层及所述第一像素电极层共同定义为非显示区域，所述第二公共电极层、所述第二钝化层及所述第二像素电极层则共同定义为显示区域。
根据本发明一实施例，所述非显示区域与所述显示区域之间具有段差，且所述非显示区域和所述显示区域的所述平坦层齐平。
根据本发明一实施例，所述第一像素电极层沿着所述过孔与所述第二像素电极层彼此连接时，所述第一像素电极层与所述第一公共电极层间具有第一间隙，所述第二像素电极层与所述第二公共电极层间具有一第二间隙。
根据本发明一实施例，所述第一像素电极层的高度高于所述第二像素电极层的高度，所述第一公共电极层的高度高于所述第二公共电极层的高度。
根据本发明一实施例，所述第二中间层还开设有穿孔，所述第一公共电极层通过所述穿孔与所述金属线路层连接。
根据本发明一实施例，所述薄膜晶体管基板还包括依序叠设的基板、低温多晶硅层、缓冲层、有源层、栅极绝缘层、栅极、第三中间层及所述源漏极，所述第三中间层设置于所述平坦层与所述栅极绝缘层之间。
再者，本发明又提供一种触控显示装置，包括上述实施例的所述的显示面板。
根据本发明一实施例，所述第一中间层、所述金属线路层、所述第二中间层、所述第一公共电极层、所述第一钝化层及所述第一像素电极层共同定义为非显示区域，所述第二公共电极层、所述第二钝化层及所述第二像素电极层则共同定义为显示区域，所述非显示区域与所述显示区域之间具有段差，且所述非显示区域和所述显示区域的所述平坦层齐平。
根据本发明一实施例，所述第一像素电极层沿着所述过孔与所述第二像素电极层彼此连接时，所述第一像素电极层与所述第一公共电极层间具有第一间隙，所述第二像素电极层与所述第二公共电极层间具有一第二间隙。
根据本发明一实施例，所述第一像素电极层的高度高于所述第二像素电极层的高度，所述第一公共电极层的高度高于所述第二公共电极层的高度。
根据本发明一实施例，所述第二中间层还开设有穿孔，所述第一公共电极层通过所述穿孔与所述金属线路层连接。
根据本发明一实施例，所述薄膜晶体管基板还包括依序叠设的基板、低温多晶硅层、缓冲层、有源层、栅极绝缘层、栅极、第三中间层及所述源漏极，所述第三中间层设置于所述平坦层与所述栅极绝缘层之间。
根据本发明一实施例，所述触控显示装置为内嵌式触控显示装置。
 有益效果
本发明还具有以下功效，由于显示区域不具有所述第一中间层和所述第二中间层，可以提升所述薄膜晶体管基板(即像素开口区)单体亮度及光穿透率，进而提升显示面板整体的光穿透率及亮度。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本发明较佳具体实施例的横截面图；
图2是本发明较佳具体实施例的上视图；及
图3是本发明较佳具体实施例的侧视图。
 本发明的实施方式
在具体实施方式中提及“实施例”意指结合实施例描述的特定特征、结构或特性可以包含在本发明的至少一个实施例中。在说明书中的不同位置出现的相同用语并非必然被限制为相同的实施方式，而应当理解为与其它实施例互为独立的或备选的实施方式。在本发明提供的实施例所公开的技术方案启示下，本领域的普通技术人员应理解本发明所描述的实施例可具有其他符合本发明构思的技术方案结合或变化。
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下 ]、[前]、 [后]、 [左]、 [右]、 [内]、 [外]、 [侧面 ]、[竖直]、[水平]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
请参照图1所示，本发明提供一种显示面板1，包括薄膜晶体管基板2，所述薄膜晶体管基板2上设置有平坦层3并在所述平坦层3开设过孔31。所述过孔31曝露所述薄膜晶体管基板2的源漏极28。在所述过孔31的一侧并对应所述源漏极28上还叠设有第一中间层41、金属线路层42、第二中间层43、第一公共电极层44、第一钝化层45及第一像素电极层46。在所述过孔31的另一侧则叠设有第二公共电极层51、第二钝化层52及第二像素电极层53。所述第一公共电极层44电性连接所述金属线路层42，所述第一像素电极层46沿着所述过孔31与所述第二像素电极层53电性连接。
请一并参照图2及图3所示，所述第一中间层41、所述金属线路层42、所述第二中间层43、所述第一公共电极层44、所述第一钝化层45及所述第一像素电极层46共同定义为非显示区域4。所述第二公共电极层51、所述第二钝化层52及所述第二像素电极层53则共同定义为显示区域5。所述非显示区域4与所述显示区域5之间具有段差6，且所述非显示区域4和所述显示区域5的所述平坦层3齐平。
所述第一像素电极层46的高度高于所述第二像素电极层53的高度，所述第一公共电极层44的高度高于所述第二公共电极层51的高度。具体而言，所述显示区域5与所述非显示区域4相比，显示区域5不具有第一中间层41及第二中间层43，使得显示区域5高度低于非显示区域4，因此位在薄膜晶体管基板2(即像素开口区)的光穿透率及亮度能够有效提升。所述第一中间层41和所述第二中间层43的材料相同且优选为氮化硅(SiNx)。
此外，所述第二中间层43还开设有穿孔431，所述第一公共电极层44通过所述穿孔413与所述金属线路层42连接。所述第一像素电极层46沿着所述过孔31与所述第二像素电极层53彼此连接时，所述第一像素电极层46与所述第一公共电极层44间具有第一间隙47，所述第二像素电极层53与所述第二公共电极层51间也具有一第二间隙54，以避免短路。
需说明的是，所述薄膜晶体管基板2还包括依序叠设的基板21、低温多晶硅层22、缓冲层23、有源层24、栅极绝缘层25、栅极26、第三中间层27及所述源漏极28，其中上述结构构成薄膜晶体管7(TFT)。所述第三中间层27设置于所述平坦层3与所述栅极绝缘层25之间。然而在非显示区域5中，第三中间层27设置于源漏极28和栅极26之间。
再者，本发明另提供一种触控显示装置(图略)，包括上述实施例所述的显示面板1。所述触控显示装置优选为内嵌式触控显示装置(In-Cell Touch Display Device)。非显示区4会对应到上方彩色滤光膜(CF)的黑矩阵(图略)，故光无法穿透。显示区5会对应到上方彩色滤光膜的像素层(图略)，故光能够穿透，增加光穿透率及亮度。
在实际的制程工艺中，显示区域5与非显示区域4是在同时形成第二中间层43后，两区域会通过调节不同的蚀刻制程参数，延迟蚀刻时间，例如将蚀刻时间从30秒调整至60秒，因此通过对显示区域5延迟蚀刻时间至60秒，使得显示区域5的第一中间层41和第二中间层43均会被蚀刻掉。换言之，由于显示区域5不具有所述第一中间层41和所述第二中间层43，能够有效提升所述薄膜晶体管基板2(即像素开口区)单体亮度及光穿透率，进而提升显示面板1/触控显示装置整体的光穿透率及亮度。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，所衍生的各种更动与变化，皆涵盖于本发明以权利要求界定的保护范围内。

Claims (20)

  1. 一种显示面板，包括薄膜晶体管基板，所述薄膜晶体管基板上设置有平坦层并在所述平坦层开设过孔，所述过孔曝露所述薄膜晶体管基板的源漏极，其特征在于，在所述过孔的一侧并对应所述源漏极上还叠设有第一中间层、金属线路层、第二中间层、第一公共电极层、第一钝化层及第一像素电极层，在所述过孔的另一侧则叠设有第二公共电极层、第二钝化层及第二像素电极层，其中所述第一公共电极层电性连接所述金属线路层，所述第一像素电极层沿着所述过孔与所述第二像素电极层电性连接；
    其中，所述第一中间层、所述金属线路层、所述第二中间层、所述第一公共电极层、所述第一钝化层及所述第一像素电极层共同定义为非显示区域，所述第二公共电极层、所述第二钝化层及所述第二像素电极层则共同定义为显示区域。
  2. 如权利要求1所述的显示面板，其中所述非显示区域与所述显示区域之间具有段差，且所述非显示区域和所述显示区域的所述平坦层齐平。
  3. 如权利要求1所述的显示面板，其中所述第一像素电极层沿着所述过孔与所述第二像素电极层彼此连接时，所述第一像素电极层与所述第一公共电极层间具有第一间隙，所述第二像素电极层与所述第二公共电极层间具有一第二间隙。
  4. 如权利要求1所述的显示面板，其中所述第一像素电极层的高度高于所述第二像素电极层的高度，所述第一公共电极层的高度高于所述第二公共电极层的高度。
  5. 如权利要求１所述的显示面板，其中所述第二中间层还开设有穿孔，所述第一公共电极层通过所述穿孔与所述金属线路层连接。
  6. 一种显示面板，包括薄膜晶体管基板，所述薄膜晶体管基板上设置有平坦层并在所述平坦层开设过孔，所述过孔曝露所述薄膜晶体管基板的源漏极，其特征在于，在所述过孔的一侧并对应所述源漏极上还叠设有第一中间层、金属线路层、第二中间层、第一公共电极层、第一钝化层及第一像素电极层，在所述过孔的另一侧则叠设有第二公共电极层、第二钝化层及第二像素电极层，其中所述第一公共电极层电性连接所述金属线路层，所述第一像素电极层沿着所述过孔与所述第二像素电极层电性连接。
  7. 如权利要求6所述的显示面板，其中所述第一中间层、所述金属线路层、所述第二中间层、所述第一公共电极层、所述第一钝化层及所述第一像素电极层共同定义为非显示区域，所述第二公共电极层、所述第二钝化层及所述第二像素电极层则共同定义为显示区域。
  8. 如权利要求6所述的显示面板，其中所述非显示区域与所述显示区域之间具有段差，且所述非显示区域和所述显示区域的所述平坦层齐平。
  9. 如权利要求6所述的显示面板，其中所述第一像素电极层沿着所述过孔与所述第二像素电极层彼此连接时，所述第一像素电极层与所述第一公共电极层间具有第一间隙，所述第二像素电极层与所述第二公共电极层间具有一第二间隙。
  10. 如权利要求6所述的显示面板，其中所述第一像素电极层的高度高于所述第二像素电极层的高度，所述第一公共电极层的高度高于所述第二公共电极层的高度。
  11. 如权利要求6所述的显示面板，其中所述第二中间层还开设有穿孔，所述第一公共电极层通过所述穿孔与所述金属线路层连接。
  12. 如权利要求6所述的显示面板，其中所述薄膜晶体管基板还包括依序叠设的基板、低温多晶硅层、缓冲层、有源层、栅极绝缘层、栅极、第三中间层及所述源漏极，所述第三中间层设置于所述平坦层与所述栅极绝缘层之间。
  13. 如权利要求6所述的显示面板，其特征在于，所述第一中间层和所述第二中间层材料相同且均为氮化硅。
  14. 一种触控显示装置，包括如权利要求6所述的显示面板。
  15. 如权利要求14所述的触控显示装置，其中所述第一中间层、所述金属线路层、所述第二中间层、所述第一公共电极层、所述第一钝化层及所述第一像素电极层共同定义为非显示区域，所述第二公共电极层、所述第二钝化层及所述第二像素电极层则共同定义为显示区域，所述非显示区域与所述显示区域之间具有段差，且所述非显示区域和所述显示区域的所述平坦层齐平。
  16. 如权利要求14所述的触控显示装置，其中所述第一像素电极层沿着所述过孔与所述第二像素电极层彼此连接时，所述第一像素电极层与所述第一公共电极层间具有第一间隙，所述第二像素电极层与所述第二公共电极层间具有一第二间隙。
  17. 如权利要求14所述的触控显示装置，其中所述第一像素电极层的高度高于所述第二像素电极层的高度，所述第一公共电极层的高度高于所述第二公共电极层的高度。
  18. 如权利要求14所述的触控显示装置，其中所述第二中间层还开设有穿孔，所述第一公共电极层通过所述穿孔与所述金属线路层连接。
  19. 如权利要求14所述的触控显示装置，其中所述薄膜晶体管基板还包括依序叠设的基板、低温多晶硅层、缓冲层、有源层、栅极绝缘层、栅极、第三中间层及所述源漏极，所述第三中间层设置于所述平坦层与所述栅极绝缘层之间。
  20. 如权利要求14所述的触控显示装置，其中所述触控显示装置为内嵌式触控显示装置。
PCT/CN2019/073057 2018-11-30 2019-01-25 显示面板及触控显示装置 Ceased WO2020107696A1 (zh)

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