WO2020105734A1 - セラミックス－銅複合体、セラミックス－銅複合体の製造方法、セラミックス回路基板およびパワーモジュール - Google Patents

セラミックス－銅複合体、セラミックス－銅複合体の製造方法、セラミックス回路基板およびパワーモジュール

Info

Publication number
WO2020105734A1
WO2020105734A1 PCT/JP2019/045833 JP2019045833W WO2020105734A1 WO 2020105734 A1 WO2020105734 A1 WO 2020105734A1 JP 2019045833 W JP2019045833 W JP 2019045833W WO 2020105734 A1 WO2020105734 A1 WO 2020105734A1
Authority
WO
WIPO (PCT)
Prior art keywords
copper
ceramic
region
layer
ceramics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2019/045833
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
晃正 湯浅
貴裕 中村
周平 森田
西村　浩二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denka Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denka Co Ltd filed Critical Denka Co Ltd
Priority to EP19887440.6A priority Critical patent/EP3885331B1/en
Priority to CN202310371038.9A priority patent/CN116353153A/zh
Priority to CN201980075826.5A priority patent/CN113165986A/zh
Priority to JP2020557676A priority patent/JP7410872B2/ja
Priority to US17/296,172 priority patent/US12065385B2/en
Priority to KR1020217016267A priority patent/KR20210097123A/ko
Publication of WO2020105734A1 publication Critical patent/WO2020105734A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00—Layered products comprising a layer of metal
    • B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04—Interconnection of layers
    • B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B9/041—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material of metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2250/00—Layers arrangement
    • B32B2250/40—Symmetrical or sandwich layers, e.g. ABA, ABCBA, ABCCBA
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/08—PCBs, i.e. printed circuit boards
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6567—Treatment time
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/122—Metallic interlayers based on refractory metals
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/127—The active component for bonding being a refractory metal
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/345—Refractory metal oxides
    • C04B2237/348—Zirconia, hafnia, zirconates or hafnates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/365—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/60—Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates

Definitions

  • the present invention relates to a ceramics-copper composite, a method for manufacturing a ceramics-copper composite, a ceramics circuit board, and a power module.
  • a ceramic-metal composite in which a metal plate is bonded to a ceramic material such as alumina, beryllia, silicon nitride, or aluminum nitride may be used.
  • a ceramic material such as alumina, beryllia, silicon nitride, or aluminum nitride
  • ceramic materials such as aluminum nitride sintered bodies and silicon nitride sintered bodies having high insulation and high thermal conductivity tend to be used.
  • Patent Document 1 describes a metal-ceramic bonding body having a ceramic substrate and a metal plate bonded to the ceramic substrate via a brazing material.
  • the length of the brazing material protruding from the bottom surface of the metal plate is longer than 30 ⁇ m and 250 ⁇ m or less.
  • a brazing material layer along a plurality of circuit patterns is formed on at least one surface of a ceramic substrate, and a metal plate is joined via the brazing material layers, and the metal plate is unnecessary.
  • a ceramic circuit board in which a circuit pattern made of a metal plate is formed by etching a portion of the metal plate, and a protruding portion is formed by a brazing material layer protruding from the outer edge of the metal plate.
  • the maximum surface roughness Rmax of the protruding portion is 5 to 50 ⁇ m.
  • Patent Document 3 a copper member made of copper or a copper alloy and a ceramic member made of AlN or Al 2 O 3 are joined together using a joining material containing Ag and Ti Cu / A ceramic bonded body is described.
  • a Ti compound layer made of Ti nitride or Ti oxide is formed at the bonding interface between the copper member and the ceramic member, and Ag particles are dispersed in the Ti compound layer.
  • the coefficient of thermal expansion differs greatly between ceramic materials and metal plates. Therefore, due to repeated thermal cycle loads, thermal stress due to the difference in thermal expansion coefficient is generated at the bonding interface between the ceramic material and the metal plate. Then, there is a possibility that cracks may occur on the side of the ceramic material, leading to defective bonding or poor thermal resistance, and the reliability of the power module may be reduced.
  • the power module has been further increased in output and integration, and thermal stress due to a thermal cycle tends to be further increased. Therefore, it is becoming more important to deal with thermal cycle load / thermal stress.
  • the present invention has been made in view of such circumstances.
  • One of the objects of the present invention is to provide a ceramic-metal composite (a substrate provided with a ceramic layer and a metal layer) in which cracks are less likely to occur even after a thermal cycle test under severe conditions.
  • the present invention is as follows.
  • a flat ceramic-copper composite comprising a ceramics layer, a copper layer, and a brazing material layer present between the ceramics layer and the copper layer,
  • the region P having a length of 1700 ⁇ m in the long side direction on the cut surface when the ceramic-copper composite is cut along a plane perpendicular to the main surface thereof is defined as a region P
  • the average crystal grain size D1 of the copper crystals is 30 ⁇ m or more and 100 ⁇ m or less.
  • the ceramics-copper composite according to any one of When a region having a length of 1700 ⁇ m in the long side direction, which is different from the region P, is defined as a region P ′ on the cut surface, In the region P ′, the average crystal grain size D1 ′ of the copper crystals at least partially present in the region P1 ′ within 50 ⁇ m within 50 ⁇ m from the interface between the ceramics layer and the brazing material layer is 30 ⁇ m or more and 100 ⁇ m.
  • the following is a ceramics-copper composite.
  • a ceramics circuit board wherein a circuit is formed by removing at least a part of the copper layer of the ceramics-copper composite according to any one of 1.
  • a ceramics-metal composite (a substrate including a ceramics layer and a metal layer) in which cracks are less likely to occur even after a heat cycle test under severe conditions.
  • FIG. 3 is a view schematically showing the ceramic-copper composite of the present embodiment.
  • FIG. 1A is a diagram schematically showing the whole ceramic-copper composite
  • FIG. 1B is a diagram schematically showing its cross section.
  • FIG. 8 is a supplementary diagram for explaining “a copper crystal having at least a part in a region P1” in the ceramics-copper composite of the present embodiment.
  • FIG. 6 is a supplementary diagram for explaining how to determine the particle size of copper crystal particles.
  • the ceramics-copper composite is also simply referred to as “composite”.
  • FIG. 1A is a diagram schematically showing the ceramic-copper composite (composite) of the present embodiment.
  • the composite has a flat plate shape.
  • the composite includes at least a ceramics layer 1, a copper layer 2, and a brazing material layer 3 existing between the two layers. In other words, the ceramic layer 1 and the copper layer 2 are joined by the brazing material layer 3.
  • FIG. 1 (B) is a diagram schematically showing a cut surface when the ceramic-copper composite shown in FIG. 1 (A) is cut along a plane ⁇ perpendicular to the main surface (for explanation). Has been supplemented with additional lines).
  • the cutting plane ⁇ can be set so as to pass through the center of gravity of the flat plate-shaped composite body, for example.
  • a region having a length of 1700 ⁇ m in the long side direction is referred to as a region P.
  • the region P can be set at any place on the cut surface, but can be set, for example, at a place including the center of gravity of the complex before cutting. Further, in the region P, a region within 50 ⁇ m from the interface between the ceramics layer 1 and the brazing material layer 3 on the copper layer 2 side is referred to as a region P1.
  • the average crystal grain size D1 of the copper crystal at least partially present in the region P1 is 30 ⁇ m or more and 100 ⁇ m or less, preferably 30 ⁇ m or more and 90 ⁇ m or less, and more preferably 30 ⁇ m or more and 80 ⁇ m or less.
  • the average crystal grain size D1 of the copper crystals at least a part of which exists in the region P1 is 30 ⁇ m or more and 100 ⁇ m or less" means that the average of the copper crystals located in the vicinity of the ceramic layer 1 is large. This means that the crystal grain size is relatively small.
  • the average crystal grain size D1 in the composite of the present embodiment In order to set the average crystal grain size D1 in the composite of the present embodiment to 30 ⁇ m or more and 100 ⁇ m or less, it is important to select an appropriate material / material in the production of the composite and to appropriately adjust the production conditions. is there. Particularly in this embodiment, selection of the material for forming the copper layer 2 is important. The details will be described later. According to the knowledge of the present inventors, it is difficult to set the average crystal grain size D1 to 30 ⁇ m or more and 100 ⁇ m or less without selecting an appropriate copper material.
  • FIG. 2 is a schematic diagram in which a part of the region P is enlarged and the copper crystal grain boundaries included in the region P are shown.
  • the solid line l 1 drawn at the bottom of FIG. 2 is the interface between the ceramic layer 1 and the brazing material layer 3.
  • a region within 50 ⁇ m upward from its solid line l 1 is a region P1.
  • the copper crystal marked with “*” a part thereof is included in the region P1 and a part thereof is not included in the region P1.
  • the copper crystals marked with “*”, that is, “a part (not all) in the region P1” "Copper crystals in which" is present are also included in the object of particle size measurement. Then, the average crystal grain size D1 is calculated based on the measurement result.
  • FIG. 2 shows many "copper crystals partially present in the region P1" in addition to the copper crystals marked with "*". That is, all of the copper crystals that the straight line 12 passes through are basically targets of grain size measurement when calculating the average grain size D1.
  • the copper crystals at least a part of which exists in the region P1, preferably do not include crystals having a grain size of more than 350 ⁇ m, and more preferably do not include crystals having a grain size of more than 300 ⁇ m. Since coarse copper particles are not contained in this way, the number of portions where grain boundaries are less likely to slip and stress is less likely to be relaxed is reduced. Therefore, it is considered that cracks are less likely to occur even after a heat cycle test under severe conditions.
  • the lower limit of the grain size of the copper crystal in the region P or the region P1 is, for example, about 5 ⁇ m.
  • the region P or the region P1 contains a copper crystal having a grain size as small as or smaller than the measurement limit by the EBSD method described later.
  • the value of D2 / D1 is It is preferably 0.5 or more and 2.0 or less, more preferably 1.0 or more and 1.5 or less. That the value of D2 / D1 is in the above numerical range means that the average crystal grain size of the copper crystals contained in the region P and the average crystal grain size of the copper crystals at least partially present in the region P1 are approximately the same. Means that. In other words, it can be said that the copper layer 2 as a whole is “uniform in average crystal grain size”.
  • D2 itself can be, for example, about the same as D1, but is preferably 15 ⁇ m or more and 200 ⁇ m or less, more preferably 30 ⁇ m or more and 150 ⁇ m or less.
  • a region having a length of 1700 ⁇ m in the long side direction is set as a region different from the region P (not overlapping with the region P), and the region is defined as the region P.
  • the average crystal grain size D1 ′ of the copper crystals at least partially present in the region P1 ′ within 50 ⁇ m from the interface between the ceramics layer 1 and the brazing material layer 3 in the region P ′ is It is preferably 30 ⁇ m or more and 100 ⁇ m or less, more preferably 30 ⁇ m or more and 90 ⁇ m or less, and more preferably 30 ⁇ m or more and 80 ⁇ m or less.
  • the copper crystals at least a portion of which exists in the region P1 ′, preferably do not contain crystals having a grain size of more than 350 ⁇ m, and more preferably do not contain crystals having a grain size of more than 300 ⁇ m.
  • the material of the ceramic layer 1 is not particularly limited as long as it is a ceramic material.
  • nitride ceramics such as silicon nitride and aluminum nitride
  • oxide ceramics such as aluminum oxide and zirconium oxide
  • carbide ceramics such as silicon carbide
  • boride ceramics such as lanthanum boride
  • non-oxide ceramics such as aluminum nitride and silicon nitride are preferable.
  • silicon nitride is preferable from the viewpoint of excellent mechanical strength and fracture toughness.
  • an oxygen-free copper plate OFCG material (OFCG: Oxygen-Free Copper Grain control) manufactured by Mitsubishi Shindoh Co., Ltd. as a material for forming the copper layer 2, a desired material can be obtained. It is possible to produce a composite having D1 or the like.
  • the copper crystals in the copper plate are heated by heating (about 800 ° C.) when joining the ceramic plate and the copper plate with the brazing material. “Grow” and the copper crystal becomes coarse (that is, D1 exceeds 100 ⁇ m).
  • the oxygen-free copper plate OFCG material has been devised to suppress the growth of copper crystals due to heating at the time of joining the brazing material, and thus the growth of copper crystals is suppressed. As a result, a complex having D1 of 30 ⁇ m or more and 100 ⁇ m or less can be obtained.
  • the brazing material layer 3 is preferably composed of a brazing material made of Ag, Cu and Ti, Sn and / or In. It is important to use a brazing material having an appropriate composition from the viewpoint of controlling numerical values such as D1, D2 and D1 ′.
  • the Ag / Cu ratio in the brazing filler metal mixture is higher than the eutectic composition of Ag and Cu of 72% by mass: 28% by mass, and by increasing the mixing ratio of the Ag powder, the coarsening of the Cu-rich phase is prevented and the Ag-rich phase is prevented.
  • a brazing material layer structure having continuous phases can be formed.
  • the mixing ratio of Ag powder and Cu powder, Sn powder or In powder is Ag powder: 85.0 parts by mass or more and 95.0 parts by mass or less, Cu powder: 5.0 parts by mass or more and 13.0 parts by mass or less.
  • Sn powder or In powder preferably, 0.4 to 3.5 parts by mass.
  • Ag powder having a specific surface area of 0.1 m 2 / g or more and 0.5 m 2 / g or less may be used.
  • a gas adsorption method can be applied to the measurement of the specific surface area.
  • the Ag powder is generally produced by an atomizing method or a wet reduction method.
  • the Cu powder has a specific surface area of 0.1 m 2 / g or more and 1.0 m 2 / g or less, and a median diameter in a volume-based particle size distribution measured by a laser diffraction method in order to make the Ag-rich phase continuous. It is preferable to use Cu powder having a D50 of 0.8 ⁇ m or more and 8.0 ⁇ m or less. By using Cu powder having an appropriate specific surface area and particle size, it is possible to suppress poor bonding and suppress discontinuity of the Ag-rich phase due to the Cu-rich phase.
  • Sn or In contained in the brazing filler metal powder is a component for reducing the contact angle of the brazing filler metal with the ceramic plate and improving the wettability of the brazing filler metal.
  • the blending amount of these is preferably 0.4 parts by mass or more and 3.5 parts by mass or less.
  • the Sn powder or In powder it is preferable to use a powder having a specific surface area of 0.1 m 2 / g or more and 1.0 m 2 / g or less and D50 of 0.8 ⁇ m or more and 10.0 ⁇ m or less.
  • a powder having an appropriate specific surface area and particle size it is possible to reduce the possibility of defective bonding and the occurrence of bonding voids.
  • the brazing material preferably contains an active metal from the viewpoint of increasing the reactivity with the aluminum nitride substrate and the silicon nitride substrate.
  • an active metal from the viewpoint of increasing the reactivity with the aluminum nitride substrate and the silicon nitride substrate.
  • the addition amount of the active metal such as titanium is preferably 1.5 parts by mass or more and 5.0 parts by mass or less based on 100 parts by mass in total of Ag powder, Cu powder, Sn powder or In powder.
  • the brazing material can be obtained by mixing at least the above-mentioned metal powder with an organic solvent or a binder as required.
  • a raker machine, a spinning orbiting mixer, a planetary mixer, a three-roll mill, etc. can be used.
  • a paste-like brazing material can be obtained.
  • the organic solvent usable here is not particularly limited. Examples thereof include methyl cellosolve, ethyl cellosolve, isophorone, toluene, ethyl acetate, terpineol, diethylene glycol monobutyl ether, and texanol.
  • the binder that can be used here is not particularly limited. For example, polymer compounds such as polyisobutyl methacrylate, ethyl cellulose, methyl cellulose, acrylic resin and methacrylic resin can be mentioned.
  • the thickness of the ceramic layer 1 is typically 0.1 mm or more and 3.0 mm or less. Considering the heat dissipation characteristics of the entire substrate and the reduction of thermal resistivity, the thickness is preferably 0.2 mm or more and 1.2 mm or less, more preferably 0.25 mm or more and 1.0 mm or less.
  • the thickness of the copper layer 2 is typically 0.1 mm or more and 1.5 mm or less. From the viewpoint of heat dissipation, it is preferably 0.3 mm or more, more preferably 0.5 mm or more.
  • the thickness of the brazing material layer 3 is not particularly limited as long as the ceramic layer 1 and the copper layer 2 can be joined. It is typically 3 ⁇ m or more and 40 ⁇ m or less, preferably 4 ⁇ m or more and 25 ⁇ m or less, and more preferably 5 ⁇ m or more and 15 ⁇ m or less.
  • the composite of this embodiment may include additional layers other than the three layers described above.
  • the composite of the present embodiment may have a five-layer structure in which the ceramic layer 1 is the central layer and the copper layers 2 are provided on both surfaces of the ceramic layer 1 with the brazing material layer 3 interposed therebetween.
  • D1, D2 / D1, D1 ′ and the like are within the above numerical range on at least one side of the ceramic layer 1.
  • D1, D2 / D1, D1 ', etc. are within the above numerical ranges on both sides of the ceramic layer 1. Is more preferable.
  • a region P1 is set from one of the two interfaces (first interface) to the copper layer 2 side closer to the first interface, (Ii) Further, another region P1 is set from the other interface (second interface) of the two interfaces to the copper layer 2 side closer to the second interface, Then, it is more preferable that D1, D2 / D1, D1 ′ and the like are in the above-mentioned numerical range in both of these two regions P1.
  • the composite body of the present embodiment has a flat plate shape.
  • the composite body of the present embodiment has a substantially rectangular shape with a size of about 10 mm ⁇ 10 mm to 200 mm ⁇ 200 mm. It should be noted that the composite of the present embodiment is typically large enough to define the above-mentioned “region P having a length of 1700 ⁇ m” and “region P ′ having a length of 1700 ⁇ m”.
  • a "cross section" for measuring the grain size of copper crystals is obtained as follows. (1) A composite (or a ceramic circuit board described later) is cut by a contour machine at a cross section perpendicular to the main surface and passing through the center of gravity of the composite to expose the cross section of the composite. (2) A resin-embedded body is prepared by embedding the cut composite in a resin. (3) The cross section of the composite in the prepared resin-embedded body is buffed with diamond abrasive grains.
  • the particle size of each copper crystal particle (the particle size of each particle from which the “average” particle size such as D1 and D2 is calculated) is determined as follows. .. See also FIG. 3 for this.
  • particle A One straight line L passing through the geometric center of gravity of one particle (referred to as particle A) seen in the above cross section is drawn. The distance d 1 between two points where this straight line intersects the grain boundary of the grain A is measured.
  • the straight line L is rotated by 2 ° about the geometric center of gravity of the particle A.
  • the distance d 2 between the two points where this rotated straight line intersects the grain boundary of the grain A is measured.
  • the above operation (2) is repeated until the straight line L rotates by 180 °, and the distances d 3 , d 4 ... Between the two points where the straight line intersects the grain boundary of the particle A are measured.
  • the average of the obtained d 1 , d 2 , d 3 , d 4 ... Is the particle diameter of the particle A.
  • the composite body of the present embodiment can be manufactured, for example, by the following steps. (1) A brazing material paste is applied to one side or both sides of a ceramic plate, and a copper plate is brought into contact with the applied surface. (2) The ceramic plate and the copper plate are joined by heat treatment in vacuum or in an inert atmosphere.
  • the method of applying the brazing paste to the ceramic plate in (1) above is not particularly limited.
  • a roll coater method, a screen printing method, a transfer method and the like can be mentioned.
  • the screen printing method is preferable because it can be applied uniformly.
  • the printability can be improved by adjusting the amount of the organic solvent in the brazing paste to 5% by mass or more and 17% by mass or less and the amount of the binder in 2% by mass or more and 8% by mass or less.
  • the treatment time is set to 60 minutes or shorter, continuity of the Ag-rich phase in the brazing material layer is easily ensured, and an excessive brazing material in the copper plate is obtained. Can be suppressed, the coarsening of copper crystals due to the recrystallization of copper can be suppressed, and the stress due to the difference in the coefficient of thermal expansion between ceramics and copper can be reduced.
  • the resulting composite may be further processed / processed.
  • at least a part of the copper layer 2 of the composite may be removed to form a circuit.
  • the circuit pattern may be formed by removing a part of the copper layer 2 and the brazing material layer 3 by etching. Thereby, a ceramics circuit board can be obtained.
  • a procedure for forming a circuit pattern on the composite to obtain a ceramics circuit board will be described below.
  • an etching mask is formed on the surface of the copper layer 2.
  • known techniques such as a photo-developing method (photoresist method), a screen printing method, and an inkjet printing method using PER400K ink manufactured by Kyouso Kagaku Co., Ltd. can be appropriately adopted.
  • the etching treatment of the copper layer 2 is performed.
  • the etching liquid There is no particular limitation on the etching liquid. Commonly used ferric chloride solution, cupric chloride solution, sulfuric acid, hydrogen peroxide solution and the like can be used. Preferred are ferric chloride solutions and cupric chloride solutions.
  • the side surface of the copper circuit may be tilted by adjusting the etching time.
  • brazing material layer 3 The applied brazing material, its alloy layer, nitride layer, etc. remain in the composite body in which a part of the copper layer 2 is removed by etching. Therefore, it is common to remove them using a solution containing an aqueous solution of ammonium halide, an inorganic acid such as sulfuric acid and nitric acid, and a hydrogen peroxide solution.
  • a solution containing an aqueous solution of ammonium halide, an inorganic acid such as sulfuric acid and nitric acid and a hydrogen peroxide solution.
  • the method of peeling off the etching mask after the etching treatment is not particularly limited.
  • the method of immersing in an alkaline aqueous solution is common.
  • plating treatment or rust prevention treatment may be performed.
  • the plating include Ni plating, Ni alloy plating, Au plating and the like.
  • the specific method of the plating treatment is (i) a conventional treatment using a chemical solution containing hypophosphite as a Ni-P electroless plating solution after a pretreatment step with a chemical solution for degreasing, chemical polishing, and Pd activation.
  • Electroless plating, (ii) electroplating by bringing the electrode into contact with the copper circuit pattern, and the like can be performed.
  • the rustproofing treatment can be performed with, for example, a benzotriazole-based compound.
  • ⁇ Power module> For example, a suitable semiconductor element is arranged on the copper circuit of the ceramic circuit board on which the copper circuit is formed as described above. In this way, the power module on which the ceramics circuit board is mounted can be obtained.
  • the power module on which the ceramics circuit board is mounted can be obtained.
  • Patent Documents 1 to 3, JP-A-10-223809, and JP-A-10-214915 For specific configuration and details of the power module, refer to, for example, the above-mentioned Patent Documents 1 to 3, JP-A-10-223809, and JP-A-10-214915.
  • Embodiments of the present invention will be described in detail based on examples and comparative examples.
  • the present invention is not limited to the embodiments.
  • Example 1 As a brazing material (including active metal), 89.5 parts by mass of Ag powder (Fukuda Metal Foil & Powder Co., Ltd .: Ag-HWQ 2.5 ⁇ m), Cu powder (Fukuda Metal Foil & Powder Co., Ltd .: Cu-HWQ) 3 ⁇ m) 9.5 parts by mass and Sn powder (manufactured by Fukuda Metal Foil & Powder Co., Ltd .: Sn-HPN 3 ⁇ m) 1.0 parts by mass, for a total of 100 parts by mass, titanium hydride powder (manufactured by Toho Tech Co., Ltd .: A brazing material containing 3.5 parts by mass of TCH-100) was prepared. The above brazing material, the binder resin PIBMA (polyisobutyl methacrylate, Mitsubishi Chemical Corporation "Dianal”), and the solvent terpineol were mixed to obtain a brazing material
  • This brazing paste was applied to both sides of the silicon nitride substrate by screen printing so that the dry thickness on each side was about 10 ⁇ m.
  • a substrate manufactured by Denka Co., Ltd. having a thickness of 0.32 mm and a length of 45 mm and a width of 45 mm was used.
  • copper plates (specifically shown in Table 1 below) are laminated on both sides of the silicon nitride substrate, and heated in a vacuum of 1.0 ⁇ 10 ⁇ 3 Pa or less at 780 ° C. for 30 minutes, The silicon nitride substrate and the copper plate were joined with a brazing material.
  • a ceramics-copper composite body was obtained in which the silicon nitride substrate and the copper plate were joined with the brazing material.
  • etching resist was printed on the joined copper plates and etched with a ferric chloride solution to form a circuit pattern. Further, the brazing material layer and the nitride layer were removed with an ammonium fluoride / hydrogen peroxide solution. In the plating step, a rustproofing treatment was performed with a benzotriazole-based compound after a pretreatment step of degreasing and chemical polishing. As described above, a ceramic circuit board in which a circuit was formed by removing a part of the copper layer of the ceramic-copper composite was obtained.
  • Example 1 except that the copper plate shown in Table 1 was used, the metal components of the brazing material were as shown in Table 1 below, and the joining conditions were as shown in Table 1 below. Similarly, the silicon nitride substrate and the copper plate were joined with a brazing material. Then, etching treatment and the like were performed to obtain a ceramics circuit board.
  • the copper plate 1 and the copper plate 2 are as follows.
  • the grain size of the copper crystals in any of the copper plates was about 20 ⁇ m.
  • -Copper plate 1 manufactured by Mitsubishi Shindoh Co., Ltd., oxygen-free copper plate OFCG material (OFCG: abbreviation of Oxygen-Free Copper Grain control), rolled copper plate having a thickness of 0.8 mm-Copper plate 2: manufactured by Mitsubishi Shindoh Co., Ltd., oxygen-free Copper plate OFC material (OFC: Oxygen-Free Copper), thickness 0.8 mm
  • a “cross section” for measurement was obtained by the following procedure.
  • the ceramic circuit boards obtained in the respective examples and comparative examples were cut at a cross section perpendicular to the main surface and passing through the center of gravity of the substrate (approximately the center of a silicon nitride substrate having a length of 45 mm and a width of 45 mm). A contour machine was used for cutting.
  • the cut ceramic circuit board was resin-embedded to prepare a resin-embedded body.
  • the cross section of the composite in the prepared resin-embedded body was buffed using diamond abrasive grains.
  • the cross section of the polished substrate was measured by electron backscattering diffraction method. Specifically, first, a region P of 1700 mm was set in the longitudinal direction of the cross section near the center of the polished substrate cross section. The copper layer in this region P was analyzed by an electron backscatter diffraction (EBSD) method under the condition of an accelerating voltage of 15 kV to obtain data.
  • EBSD electron backscatter diffraction
  • a SU6600 type field emission scanning microscope manufactured by Hitachi High-Technologies Corporation and an analyzer manufactured by TSL Solutions Co., Ltd. were used.
  • the crystallographic orientation map was created by visualizing the measurement data with software: OIM Data Analysis 7.3.0 manufactured by TSL Solutions Co., Ltd. By analyzing this crystal orientation map with image processing software, the average crystal grain size D2 of the copper crystal in the entire region P was obtained.
  • Image-Pro Plus Shape Stack version 6.3 made by Media Cybernetics was used as the image processing software.
  • the grain size of each crystal was obtained by drawing a straight line L passing through the geometrical center of gravity of the visualized grain. Then, the obtained plurality of particle sizes were averaged to obtain D1 or D2 (these were automatically processed by software to calculate the value).
  • the copper crystal having at least a part in the region P1 contains a crystal having a grain size of more than 350 ⁇ m.
  • ⁇ Copper crystal grain size in region P ′> In the cross section of the ceramic circuit board, a region P ′ having a length of 1700 ⁇ m in the long side direction of the cross section was set as a region different from the region P (not overlapping with the region P). In this region P ′, the same measurement and analysis as described above were performed, and the average crystal grain size D1 ′ of the copper crystals at least a part of which existed in the region P1 ′ was determined. Table 2 below shows whether or not D1 'is within the range of 30 ⁇ m or more and 100 ⁇ m or less (when D1 ′ is within the range of 30 ⁇ m or more and 100 ⁇ m or less, ⁇ , and when not included, x). did). Further, it was determined whether or not the copper crystals, at least a part of which existed in the region P1 ′, contained crystals having a grain size of more than 350 ⁇ m.
  • the area of cracks that entered the silicon nitride substrate in the horizontal direction was calculated, divided by the area of copper before removal, and multiplied by 100 to obtain the "horizontal crack rate" (area %).
  • the crack rate was 0.0 to 2.0%, the result was ⁇ (good), and when it was not, the result was x (bad).
  • Table 2 summarizes the analysis results of grain size and crack evaluation results.
  • the ceramic-copper composites of Examples 1 to 10 (to be exact, the composites thereof) manufactured by using, for example, an oxygen-free copper plate OFCG material manufactured by Mitsubishi Shindoh Co., Ltd. as a material for the copper layer.
  • the average crystal grain size D1 of the copper crystal at least partially present in the region P1 was within the range of 30 ⁇ m to 100 ⁇ m. Then, even after the heat cycle test under severe conditions, the occurrence of horizontal cracks was suppressed.
  • the ceramic-copper composites of Comparative Examples 1 to 8 produced by using, for example, an oxygen-free copper plate OFC material of Mitsubishi Shindoh Co., Ltd. as the material of the copper layer (to be precise, obtained by etching the composite.
  • the average crystal grain size D1 of the copper crystals, at least a part of which exists in the region P1 exceeded 100 ⁇ m. Then, in the thermal cycle test, the occurrence of horizontal cracks was clearly larger than in Examples 1 to 10.

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Products (AREA)
  • Manufacturing Of Printed Wiring (AREA)
PCT/JP2019/045833 2018-11-22 2019-11-22 セラミックス－銅複合体、セラミックス－銅複合体の製造方法、セラミックス回路基板およびパワーモジュール Ceased WO2020105734A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
EP19887440.6A EP3885331B1 (en) 2018-11-22 2019-11-22 Ceramic-copper composite, method for producing ceramic-copper composite, ceramic circuit board, and power module
CN202310371038.9A CN116353153A (zh) 2018-11-22 2019-11-22 陶瓷-铜复合体、陶瓷-铜复合体的制造方法、陶瓷电路基板及功率模块
CN201980075826.5A CN113165986A (zh) 2018-11-22 2019-11-22 陶瓷-铜复合体、陶瓷-铜复合体的制造方法、陶瓷电路基板及功率模块
JP2020557676A JP7410872B2 (ja) 2018-11-22 2019-11-22 セラミックス－銅複合体、セラミックス－銅複合体の製造方法、セラミックス回路基板およびパワーモジュール
US17/296,172 US12065385B2 (en) 2018-11-22 2019-11-22 Ceramic-copper composite, method of producing ceramic-copper composite, ceramic circuit board, and power module
KR1020217016267A KR20210097123A (ko) 2018-11-22 2019-11-22 세라믹스-구리 복합체, 세라믹스-구리 복합체의 제조 방법, 세라믹스 회로 기판 및 파워 모듈

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018-218964 2018-11-22
JP2018218964 2018-11-22

Publications (1)

Publication Number Publication Date
WO2020105734A1 true WO2020105734A1 (ja) 2020-05-28

Family

ID=70774553

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2019/045833 Ceased WO2020105734A1 (ja) 2018-11-22 2019-11-22 セラミックス－銅複合体、セラミックス－銅複合体の製造方法、セラミックス回路基板およびパワーモジュール

Country Status (6)

Country Link
US (1) US12065385B2 (https=)
EP (1) EP3885331B1 (https=)
JP (1) JP7410872B2 (https=)
KR (1) KR20210097123A (https=)
CN (2) CN113165986A (https=)
WO (1) WO2020105734A1 (https=)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021200242A1 (ja) * 2020-03-31 2021-10-07 Ｄｏｗａメタルテック株式会社 ろう材およびその製造方法並びに金属－セラミックス接合基板の製造方法
EP4168376A1 (de) * 2020-07-30 2023-04-26 Rogers Germany GmbH Verfahren zur herstellung eines metall-keramik-substrats und ein metall-keramik-substrat hergestellt mit einem solchen verfahren
EP4175425A4 (en) * 2020-06-29 2023-12-27 BYD Company Limited Ceramic-cladded copper plate and method for manufacturing ceramic-cladded copper plate
WO2024257835A1 (ja) * 2023-06-14 2024-12-19 京セラ株式会社 金属と絶縁体との接合体、その用途、および金属と絶縁体との接合体の製造方法
RU2833556C1 (ru) * 2024-04-01 2025-01-24 Рафаиль Исмагильевич Шайдуллин Способ приготовления и термообработки дисперсно-упрочненных композиций паст для медно-керамических нитридных, оксидных и карбидных плат силовой электроники

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021187201A1 (ja) * 2020-03-18 2021-09-23 株式会社 東芝 接合体、セラミックス銅回路基板、接合体の製造方法、およびセラミックス銅回路基板の製造方法
WO2025211988A1 (ru) * 2024-04-01 2025-10-09 Рафаиль Исмагильевич ШАЙДУЛЛИН Способ изготовления медно-керамических композитов для плат силовой электроники
CN119794486A (zh) * 2025-01-13 2025-04-11 武汉理工大学 一种基于Ag@TiH2复合钎料的Si3N4/Cu连接件及其制备与应用

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10214915A (ja) 1997-01-29 1998-08-11 Denki Kagaku Kogyo Kk パワーモジュール用回路基板
JPH10223809A (ja) 1997-02-07 1998-08-21 Denki Kagaku Kogyo Kk パワーモジュール
JP2003112980A (ja) 2001-09-28 2003-04-18 Dowa Mining Co Ltd 金属−セラミックス接合体
JP2005268821A (ja) 2005-05-24 2005-09-29 Hitachi Metals Ltd セラミックス回路基板及びこれを用いたパワー半導体モジュール
JP2006282417A (ja) * 2005-03-31 2006-10-19 Dowa Mining Co Ltd 金属−セラミックス接合基板
JP2011124585A (ja) * 2011-01-07 2011-06-23 Hitachi Metals Ltd セラミックス配線基板、その製造方法及び半導体モジュール
JP2014090144A (ja) * 2012-10-31 2014-05-15 Denki Kagaku Kogyo Kk セラミック回路基板および製造方法
JP2015092552A (ja) 2013-09-30 2015-05-14 三菱マテリアル株式会社 Ｃｕ／セラミックス接合体、Ｃｕ／セラミックス接合体の製造方法、及び、パワーモジュール用基板
WO2016017679A1 (ja) * 2014-07-29 2016-02-04 電気化学工業株式会社 セラミックス回路基板及びその製造方法
WO2017213207A1 (ja) * 2016-06-10 2017-12-14 田中貴金属工業株式会社 セラミックス回路基板、及び、セラミックス回路基板の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4077888B2 (ja) 1995-07-21 2008-04-23 株式会社東芝 セラミックス回路基板
JP4345054B2 (ja) * 2003-10-09 2009-10-14 日立金属株式会社 セラミックス基板用ろう材及びこれを用いたセラミックス回路基板、パワー半導体モジュール
JP4544964B2 (ja) * 2004-10-27 2010-09-15 京セラ株式会社 放熱基板
JP5186719B2 (ja) * 2005-08-29 2013-04-24 日立金属株式会社 セラミックス配線基板、その製造方法及び半導体モジュール
JP5129189B2 (ja) * 2009-03-31 2013-01-23 Ｄｏｗａメタルテック株式会社 金属セラミックス接合基板及びその製造方法
JP2011097038A (ja) 2009-10-02 2011-05-12 Ibiden Co Ltd セラミック配線基板およびその製造方法
JP5474188B2 (ja) * 2010-05-27 2014-04-16 京セラ株式会社 回路基板およびこれを用いた電子装置
WO2013002407A1 (ja) 2011-06-30 2013-01-03 日立金属株式会社 ろう材、ろう材ペースト、セラミックス回路基板、セラミックスマスター回路基板及びパワー半導体モジュール
TWI567047B (zh) * 2014-02-12 2017-01-21 三菱綜合材料股份有限公司 銅／陶瓷接合體及電源模組用基板
JP6415297B2 (ja) 2014-12-16 2018-10-31 Ｎｇｋエレクトロデバイス株式会社 銅張セラミックス回路基板、これを搭載した電子機器、及び銅張セラミックス回路基板の製造方法
JP6742073B2 (ja) * 2015-03-11 2020-08-19 デンカ株式会社 セラミックス回路基板
JP6621353B2 (ja) * 2016-03-25 2019-12-18 デンカ株式会社 耐熱性セラミックス回路基板

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10214915A (ja) 1997-01-29 1998-08-11 Denki Kagaku Kogyo Kk パワーモジュール用回路基板
JPH10223809A (ja) 1997-02-07 1998-08-21 Denki Kagaku Kogyo Kk パワーモジュール
JP2003112980A (ja) 2001-09-28 2003-04-18 Dowa Mining Co Ltd 金属−セラミックス接合体
JP2006282417A (ja) * 2005-03-31 2006-10-19 Dowa Mining Co Ltd 金属−セラミックス接合基板
JP2005268821A (ja) 2005-05-24 2005-09-29 Hitachi Metals Ltd セラミックス回路基板及びこれを用いたパワー半導体モジュール
JP2011124585A (ja) * 2011-01-07 2011-06-23 Hitachi Metals Ltd セラミックス配線基板、その製造方法及び半導体モジュール
JP2014090144A (ja) * 2012-10-31 2014-05-15 Denki Kagaku Kogyo Kk セラミック回路基板および製造方法
JP2015092552A (ja) 2013-09-30 2015-05-14 三菱マテリアル株式会社 Ｃｕ／セラミックス接合体、Ｃｕ／セラミックス接合体の製造方法、及び、パワーモジュール用基板
WO2016017679A1 (ja) * 2014-07-29 2016-02-04 電気化学工業株式会社 セラミックス回路基板及びその製造方法
WO2017213207A1 (ja) * 2016-06-10 2017-12-14 田中貴金属工業株式会社 セラミックス回路基板、及び、セラミックス回路基板の製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021200242A1 (ja) * 2020-03-31 2021-10-07 Ｄｏｗａメタルテック株式会社 ろう材およびその製造方法並びに金属－セラミックス接合基板の製造方法
JP2021159926A (ja) * 2020-03-31 2021-10-11 Ｄｏｗａメタルテック株式会社 ろう材およびその製造方法並びに金属−セラミックス接合基板の製造方法
JP7537900B2 (ja) 2020-03-31 2024-08-21 Ｄｏｗａメタルテック株式会社 ろう材およびその製造方法並びに金属－セラミックス接合基板の製造方法
US12337421B2 (en) 2020-03-31 2025-06-24 Dowa Metaltech Co., Ltd. Brazing material, method for producing the same, and method for producing metal-ceramics bonded substrate
EP4175425A4 (en) * 2020-06-29 2023-12-27 BYD Company Limited Ceramic-cladded copper plate and method for manufacturing ceramic-cladded copper plate
US12284766B2 (en) 2020-06-29 2025-04-22 Byd Company Limited Ceramic-cladded copper plate and method for manufacturing ceramic-cladded copper plate
EP4168376A1 (de) * 2020-07-30 2023-04-26 Rogers Germany GmbH Verfahren zur herstellung eines metall-keramik-substrats und ein metall-keramik-substrat hergestellt mit einem solchen verfahren
WO2024257835A1 (ja) * 2023-06-14 2024-12-19 京セラ株式会社 金属と絶縁体との接合体、その用途、および金属と絶縁体との接合体の製造方法
RU2833556C1 (ru) * 2024-04-01 2025-01-24 Рафаиль Исмагильевич Шайдуллин Способ приготовления и термообработки дисперсно-упрочненных композиций паст для медно-керамических нитридных, оксидных и карбидных плат силовой электроники

Also Published As

Publication number Publication date
JP7410872B2 (ja) 2024-01-10
EP3885331A1 (en) 2021-09-29
US20220009842A1 (en) 2022-01-13
EP3885331A4 (en) 2022-01-19
CN116353153A (zh) 2023-06-30
EP3885331B1 (en) 2024-03-06
KR20210097123A (ko) 2021-08-06
JPWO2020105734A1 (ja) 2021-10-14
US12065385B2 (en) 2024-08-20
CN113165986A (zh) 2021-07-23

Similar Documents

Publication Publication Date Title
JP7410872B2 (ja) セラミックス－銅複合体、セラミックス－銅複合体の製造方法、セラミックス回路基板およびパワーモジュール
KR102521140B1 (ko) 세라믹스 회로 기판 및 그 제조 방법
KR102504621B1 (ko) 세라믹스 회로 기판 및 그것을 사용한 모듈
JP7212700B2 (ja) セラミックス－銅複合体、セラミックス回路基板、パワーモジュール及びセラミックス－銅複合体の製造方法
CN102576697B (zh) 功率模块用基板、带散热器的功率模块用基板、功率模块、功率模块用基板的制造方法及带散热器的功率模块用基板的制造方法
EP2282334B1 (en) Method for producing substrate for power module
KR20200004799A (ko) 세라믹스 회로 기판 및 그 제조 방법과 그것을 사용한 모듈
EP3109222B1 (en) Ceramic circuit board
CN110691762B (zh) 陶瓷电路基板和其制造方法
JPH09275166A (ja) 窒化アルミニウム基材を用いた半導体装置用部材及びその製造方法
JP4345054B2 (ja) セラミックス基板用ろう材及びこれを用いたセラミックス回路基板、パワー半導体モジュール
JP4632116B2 (ja) セラミックス回路基板
JP2023091914A (ja) 金属－セラミックス接合基板の製造方法、および、金属－セラミックス接合基板
JP2013191640A (ja) パワーモジュール用基板及びその製造方法
JP7714134B2 (ja) セラミックス銅回路基板およびそれを用いた半導体装置
JP7680252B2 (ja) 回路基板の製造方法、および、半導体モジュールの製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 19887440

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2020557676

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2019887440

Country of ref document: EP

Effective date: 20210622