WO2020103610A1 - 显示面板及其制造方法、显示装置 - Google Patents

显示面板及其制造方法、显示装置

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Publication number
WO2020103610A1
WO2020103610A1 PCT/CN2019/111226 CN2019111226W WO2020103610A1 WO 2020103610 A1 WO2020103610 A1 WO 2020103610A1 CN 2019111226 W CN2019111226 W CN 2019111226W WO 2020103610 A1 WO2020103610 A1 WO 2020103610A1
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WO
WIPO (PCT)
Prior art keywords
layer
substrate
cofferdam
inorganic layer
display area
Prior art date
Application number
PCT/CN2019/111226
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English (en)
French (fr)
Inventor
王世龙
蒋志亮
宋丽
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Publication date
Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/755,180 priority Critical patent/US11444262B2/en
Publication of WO2020103610A1 publication Critical patent/WO2020103610A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display panel, a manufacturing method thereof, and a display device.
  • AMOLED active matrix organic light emitting diode
  • a display panel including a display area and a non-display area surrounding the display area, the non-display area including: a substrate, at least part of a surface of the substrate is non-planar; and An inorganic layer conformally on one side of the substrate and in contact with the at least part of the surface.
  • the display panel further includes: an encapsulation layer on a side of the inorganic layer away from the substrate, wherein the surface of the portion of the substrate not covered by the encapsulation layer is non-planar.
  • the non-display area further includes: at least one cofferdam located on a side of the inorganic layer away from the substrate, the encapsulation layer covering the at least one cofferdam and Partial contact.
  • At least part of the surface of the portion of the inorganic layer in contact with the encapsulation layer is non-planar.
  • the at least one cofferdam includes a first cofferdam and a second cofferdam located on a side of the first cofferdam away from the display area, and the inorganic layer is located on the first cofferdam and The surface between the second cofferdams is non-planar.
  • the height of the second cofferdam is greater than the height of the first cofferdam.
  • the at least part of the surface has at least one of protrusions and depressions.
  • the substrate includes a first flexible substrate layer, a second flexible substrate layer, and a barrier layer between the first flexible substrate layer and the second flexible substrate layer, wherein the first The at least part of the surface of the two flexible substrate layers away from the first flexible substrate layer is non-planar.
  • the inorganic layer includes a first inorganic layer and a second inorganic layer on a side of the first inorganic layer away from the substrate, the first inorganic layer being in contact with the at least part of the surface.
  • the material of each of the first flexible substrate layer and the second flexible substrate layer includes an organic material
  • the material of the barrier layer includes an inorganic material
  • the material of one of the first inorganic layer and the second inorganic layer includes silicon nitride, and the material of the other includes silicon oxynitride.
  • a method for manufacturing a display panel including forming a display area and a non-display area surrounding the display area, the forming the non-display area includes: a substrate for the substrate; At least part of the surface is treated so that the at least part of the surface is non-planar; and forming an inorganic layer conformally on the side of the substrate and in contact with the at least part of the surface.
  • the method further includes: forming an encapsulation layer on a side of the inorganic layer away from the substrate, wherein a surface of the portion of the substrate not covered by the encapsulation layer is non-planar.
  • the method further includes: before forming the encapsulation layer, forming at least one cofferdam on the side of the inorganic layer away from the substrate, the encapsulation layer covering the at least one cofferdam, And in contact with the inorganic layer.
  • At least part of the surface of the portion of the inorganic layer in contact with the encapsulation layer is non-planar.
  • the at least one cofferdam includes a first cofferdam and a second cofferdam located on a side of the first cofferdam away from the display area, and the inorganic layer is located on the first cofferdam and The surface between the second cofferdams is non-planar.
  • the height of the second cofferdam is greater than the height of the first cofferdam.
  • the at least part of the surface has at least one of protrusions and depressions.
  • the processing includes at least one of etching and imprinting.
  • a display device including: the display panel described in any one of the above embodiments.
  • FIG. 1 is a schematic structural diagram illustrating a display panel according to an embodiment of the present disclosure
  • FIG. 2 is a schematic diagram showing the structure of a display panel according to another embodiment of the present disclosure.
  • FIG. 3 is a schematic diagram showing a structure of a display panel according to yet another embodiment of the present disclosure.
  • FIG. 4 is a schematic flowchart illustrating a process of forming a non-display area in a method of manufacturing a display panel according to an embodiment of the present disclosure.
  • first”, “second” and similar words used in this disclosure do not indicate any order, quantity or importance, but are only used to distinguish different parts. Similar words such as “include” or “include” mean that the elements before the word cover the elements listed after the word, and do not exclude the possibility of covering other elements. “Up”, “down”, etc. are only used to indicate the relative positional relationship. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.
  • a specific component when it is described that a specific component is located between the first component and the second component, there may or may not be an intervening component between the specific component and the first component or the second component.
  • the specific component when it is described that a specific component is connected to another component, the specific component may be directly connected to the other component without an intervening component, or may be directly connected to the other component without an intervening component.
  • the surface of the substrate in the non-display area is flat, and the bonding force between the inorganic layer and the substrate is small.
  • FIG. 1 is a schematic diagram showing a structure of a display panel according to some embodiments of the present disclosure.
  • the display panel includes a display area 101 and a non-display area 102 surrounding the display area 101.
  • the non-display area 102 includes a substrate 112, and at least a part of the surface of the substrate 112 is non-planar.
  • the non-planar surface of the substrate 112 may be a wave-shaped surface, for example.
  • at least a part of the surface of the substrate 112 has at least one non-planar topography feature among protrusions and depressions. It should be understood that the protrusions / depressions mentioned here are protrusions / depressions relative to the planar surface of the substrate 112.
  • the substrate 112 may include a first flexible substrate layer 10, a second flexible substrate layer 30, and a barrier layer 20 between the first flexible substrate layer 10 and the second flexible substrate layer 30. At least part of the surface of the second flexible substrate layer 30 away from the first flexible substrate layer 10 may be non-planar.
  • the materials of the first flexible substrate layer 10 and the second flexible substrate layer 30 may include, for example, organic materials such as polyimide (PI).
  • the material of the barrier layer 20 may include an inorganic material such as silicon oxynitride. The barrier layer 20 can make the substrate 112 difficult to bend on the one hand, and can prevent water vapor and oxygen from entering the display area 101 from below the substrate 112 on the other hand.
  • the non-display area 102 further includes an inorganic layer 122 conformally positioned on the side of the substrate 112 and in contact with the non-planar surface of the substrate 112 (ie, at least a part of the surface).
  • the inorganic layer 102 may include a first inorganic layer 40 and a second inorganic layer 50 on the side of the first inorganic layer 40 away from the substrate 112.
  • the first inorganic layer 40 may be in non-planar contact with the substrate 112.
  • the material of one of the first inorganic layer 40 and the second inorganic layer 50 may include silicon nitride, and the material of the other may include silicon oxynitride.
  • the inorganic layer 102 can block water vapor and oxygen from entering the thin film transistor in the display area 101 through the substrate 112.
  • the inorganic layer in the non-display area is non-planar, and the inorganic layer is conformally located on the side of the substrate and is in contact with the non-planar surface of the substrate.
  • Such a display panel improves the bonding force between the inorganic layer and the substrate in the non-display area, making the inorganic layer and the substrate difficult to separate. In this way, the possibility of moisture and oxygen entering the channel after the separation of the inorganic layer and the substrate can be reduced, the adverse effect of moisture and oxygen on the performance of the display area can be reduced, and the display effect of the display panel can be improved.
  • the non-display area 102 further includes an encapsulation layer 132 on the side of the inorganic layer 122 away from the substrate 112.
  • the encapsulation layer 132 may be a thin film encapsulation layer including a first barrier layer 60, a second barrier layer 80, and a buffer layer 70 between the first barrier layer 60 and the second barrier layer 80.
  • the materials of the first barrier layer 60 and the second barrier layer 80 may include, for example, inorganic materials, and the material of the buffer layer 70 may include, for example, organic materials.
  • the encapsulation layer 132 shown in FIG. 1 can also cover the light emitting device 111 in the display area 101.
  • the light emitting device 111 may include, for example, a first electrode layer, a second electrode layer, and a light emitting layer between the first electrode layer and the second electrode layer.
  • the light emitting device 111 may further include one or more of an electron transport layer, an electron injection layer, a hole transport layer, and a hole injection layer.
  • the light emitting device 111 may be, for example, an OLED or a quantum dot light emitting diode (QLED).
  • QLED quantum dot light emitting diode
  • a wiring layer may be provided between the light emitting device 111 and the inorganic layer 122 in the display area 101 and between the encapsulation layer 132 and the inorganic layer 122 in the non-display area 102.
  • the wiring layer may include one or more of inorganic layers such as a gate dielectric layer, an interlayer insulating layer, and a planarization layer.
  • the surface of the portion of the substrate 112 that is not covered by the encapsulation layer 132 is non-planar, as shown in FIG. 1.
  • the edge of the encapsulation layer 132 may be used as a boundary, and the surface of the portion of the substrate 112 on the side of the edge of the encapsulation layer 132 away from the display area 101 may be non-planar.
  • Such a structure improves the bonding force between the inorganic layer 102 and the substrate 112, so that the inorganic layer 102 and the substrate 112 are not easily separated and can be easily realized.
  • the non-display area 102 may further include at least one cofferdam 142 on the side of the inorganic layer 122 away from the substrate 112.
  • the cofferdam 142 is configured to block the flow of the buffer layer 70 in the encapsulation layer 132 during the manufacturing process.
  • the encapsulation layer 132 covers the bank 142 and is in contact with the inorganic layer 122.
  • the first barrier layer 60 and the second barrier layer 80 may cover the surface of the cofferdam 142.
  • the cofferdam 142 may include a first cofferdam 1421 and a second cofferdam 1422 located on the side of the first cofferdam 1421 away from the display area 101.
  • the height of the second cofferdam 1422 may be greater than the height of the first cofferdam 1421 to more effectively block the flow of the buffer layer 70 during the manufacturing process. It should be understood that the height here refers to the height in the direction from the substrate 112 to the inorganic layer 122.
  • the bank 142 may be formed in the process of forming the pixel defining layer and the planarization layer of the display panel. That is, the cofferdam 142 may include one or more of the pixel defining layer and the planarization layer.
  • At least a part of the surface of the portion where the inorganic layer 122 contacts the encapsulation layer 132 may be non-planar, which will be described below in conjunction with FIG. 2.
  • FIG. 2 is a schematic diagram showing a structure of a display panel according to another embodiment of the present disclosure.
  • the surface of the portion of the inorganic layer 122 between the first cofferdam 1421 and the second cofferdam 1422 is non-planar.
  • Such a display panel can increase the bonding force between the inorganic layer 122 and the encapsulation layer 132, so that the inorganic layer 122 and the encapsulation layer 132 are not easily separated, and reduce water vapor and oxygen into the display area through the channel after the separation of the inorganic layer 122 and the encapsulation layer 132
  • the possibility of 101 further improves the display effect of the display panel.
  • the projections of the first cofferdam 1421 and the second cofferdam 1422 on the substrate 112 are the first projection and the second projection, respectively.
  • the surface of the portion of the substrate 112 between the first projection and the second projection may be non-planar. This makes the surface of the inorganic layer 122 conformally formed on this portion non-planar.
  • the surface of the portion of the substrate 112 between the first projection and the second projection may be flat.
  • the surface of the portion of the inorganic layer 122 between the first cofferdam 1421 and the second cofferdam 1422 may become non-planar by additional processing.
  • FIG. 3 is a schematic diagram showing a structure of a display panel according to yet another embodiment of the present disclosure.
  • the entire surface of the substrate 112 of the non-display area 102 may be non-planar.
  • Such a display panel further improves the bonding force between the inorganic layer 122 and the substrate 112 and the bonding force between the inorganic layer 122 and the encapsulation layer 132, thereby further improving the display effect of the display panel.
  • the present disclosure also provides a method of manufacturing the display panel of the above embodiments.
  • the manufacturing method includes forming a display area and a non-display area surrounding the display area. The process of forming the non-display area will be described below with reference to FIG. 4.
  • FIG. 4 is a schematic flowchart illustrating a process of forming a non-display area in a method of manufacturing a display panel according to some embodiments of the present disclosure.
  • the substrate may include, for example, a first flexible substrate layer, a second flexible substrate layer, and a barrier layer between the first flexible substrate layer and the second flexible substrate layer.
  • the above processing may include, for example, etching, embossing, or a combination of both.
  • the treated surface may have at least one of protrusions and depressions.
  • the treated surface may have a wavy appearance.
  • At least part of the surface of the second flexible substrate layer may be processed so that the processed surface is non-planar.
  • step 406 an inorganic layer is formed conformally on the side of the substrate and in non-planar contact with the substrate.
  • the inorganic layer may include a first inorganic layer conformally on the substrate and a second inorganic layer conformally on the first inorganic layer.
  • the first inorganic layer is in contact with the non-planar surface of the substrate (for example, the non-planar surface of the second flexible substrate layer).
  • an encapsulation layer such as a thin-film encapsulation layer, may be formed on the side of the inorganic layer away from the substrate.
  • the surface of the portion of the substrate that is not covered by the encapsulation layer may be non-planar.
  • At least one cofferdam located on the side of the inorganic layer away from the substrate may also be formed, such as a first cofferdam and a second cofferdam located on the side of the first cofferdam away from the display area.
  • the encapsulation layer may cover the at least one cofferdam and be in contact with part of the inorganic layer.
  • At least a part of the surface of the portion where the inorganic layer is in contact with the encapsulation layer may be non-planar to increase the bonding force between the inorganic layer and the encapsulation layer.
  • the surface of the portion of the inorganic layer between the first cofferdam and the second cofferdam may be non-planar.
  • the present disclosure also provides a display device.
  • the display device may include the display panel of any one of the above embodiments.
  • the display device may be, for example, a mobile terminal, a television, a display, a notebook computer, a digital photo frame, a navigator, an electronic paper, or any product or component with a display function.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板及其制造方法、显示装置，涉及显示技术领域。所述显示面板包括显示区(101)和围绕所述显示区(101)的非显示区(102)，所述非显示区(102)包括：基板(112)，所述基板(112)的至少部分表面为非平面；保形地位于所述基板(112)一侧、且与所述至少部分表面接触的无机层(122)。

Description

显示面板及其制造方法、显示装置
相关申请的交叉引用
本申请是以CN申请号为201811375358.7，申请日为2018年11月19日的申请为基础，并主张其优先权，该CN申请的公开内容在此作为整体引入本申请中。
技术领域
本公开涉及显示技术领域，尤其涉及一种显示面板及其制造方法、显示装置。
背景技术
目前，在有源矩阵有机发光二极管(AMOLED)显示面板中，主要通过封装层来阻隔水汽和氧气进入显示面板的显示区。
发明内容
根据本公开实施例的一方面，提供一种显示面板，包括显示区和围绕所述显示区的非显示区，所述非显示区包括：基板，所述基板的至少部分表面为非平面；和保形地位于所述基板一侧、且与所述至少部分表面接触的无机层。
在一些实施例中，所述显示面板还包括：位于所述无机层远离所述基板一侧的封装层，其中，所述基板未被所述封装层覆盖的部分的表面为非平面。
在一些实施例中，所述非显示区还包括：位于所述无机层远离所述基板一侧的至少一个围堰，所述封装层覆盖所述至少一个围堰、且与所述无机层的部分接触。
在一些实施例中，所述无机层与所述封装层接触的部分的至少部分表面为非平面。
在一些实施例中，所述至少一个围堰包括第一围堰和位于所述第一围堰远离所述显示区一侧的第二围堰，所述无机层位于所述第一围堰和所述第二围堰之间的部分的表面为非平面。
在一些实施例中，所述第二围堰的高度大于所述第一围堰的高度。
在一些实施例中，所述至少部分表面具有凸起和凹陷中的至少一种。
在一些实施例中，所述基板包括第一柔性基板层、第二柔性基板层、以及位于所述第一柔性基板层和所述第二柔性基板层之间的阻挡层，其中，所述第二柔性基板层远离所述第一柔性基板层的所述至少部分表面为非平面。
在一些实施例中，所述无机层包括第一无机层和位于所述第一无机层远离所述基板一侧的第二无机层，所述第一无机层与所述至少部分表面接触。
在一些实施例中，所述第一柔性基板层和所述第二柔性基板层中的每一个的材料包括有机材料，所述阻挡层的材料包括无机材料。
在一些实施例中，所述第一无机层和所述第二无机层中的一个的材料包括氮化硅，另一个的材料包括氮氧化硅。
根据本公开实施例的另一方面，提供一种显示面板的制造方法，包括形成显示区和围绕所述显示区的非显示区，所述形成非显示区包括：供基板；对所述基板的至少部分表面进行处理，以使得所述至少部分表面为非平面；和形成保形地位于所述基板一侧、且与所述至少部分表面接触的无机层。
在一些实施例中，所述方法还包括：形成位于所述无机层远离所述基板一侧的封装层，其中，所述基板未被所述封装层覆盖的部分的表面为非平面。
在一些实施例中，所述方法还包括：在形成所述封装层之前，形成位于所述无机层远离所述基板一侧的至少一个围堰，所述封装层覆盖所述至少一个围堰、且与所述无机层的部分接触。
在一些实施例中，所述无机层与所述封装层接触的部分的至少部分表面为非平面。
在一些实施例中，所述至少一个围堰包括第一围堰和位于所述第一围堰远离所述显示区一侧的第二围堰，所述无机层位于所述第一围堰和所述第二围堰之间的部分的表面为非平面。
在一些实施例中，所述第二围堰的高度大于所述第一围堰的高度。
在一些实施例中，所述至少部分表面具有凸起和凹陷中的至少一种。
在一些实施例中，所述处理包括刻蚀和压印中的至少一种。
根据本公开实施例的又一方面，提供一种显示装置，包括：上述任意一个实施例所述的显示面板。
附图说明
构成说明书的一部分的附图描述了本公开的实施例，并且连同说明书一起用于解释本公开的原理。
参照附图，根据下面的详细描述，可以更加清楚地理解本公开，其中：
图1是示出根据本公开一个实施例的显示面板的结构示意图；
图2是示出根据本公开另一个实施例的显示面板的结构示意图；
图3是示出根据本公开又一个实施例的显示面板的结构示意图；
图4是示出根据本公开一个实施例的显示面板的制造方法中形成非显示区的流程示意图。
应当明白，附图中所示出的各个部分的尺寸并不必然是按照实际的比例关系绘制的。此外，相同或类似的参考标号表示相同或类似的构件。
具体实施方式
现在将参照附图来详细描述本公开的各种示例性实施例。对示例性实施例的描述仅仅是说明性的，决不作为对本公开及其应用或使用的任何限制。本公开可以以许多不同的形式实现，不限于这里所述的实施例。提供这些实施例是为了使本公开透彻且完整，并且向本领域技术人员充分表达本公开的范围。应注意到：除非另外具体说明，否则在这些实施例中阐述的部件和步骤的相对布置、材料的组分、数字表达式和数值应被解释为仅仅是示例性的，而不是作为限制。
本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的部分。“包括”或者“包含”等类似的词语意指在该词前的要素涵盖在该词后列举的要素，并不排除也涵盖其他要素的可能。“上”、“下”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
在本公开中，当描述到特定部件位于第一部件和第二部件之间时，在该特定部件与第一部件或第二部件之间可以存在居间部件，也可以不存在居间部件。当描述到特定部件连接其它部件时，该特定部件可以与所述其它部件直接连接而不具有居间部件，也可以不与所述其它部件直接连接而具有居间部件。
本公开使用的所有术语(包括技术术语或者科学术语)与本公开所属领域的普通技术人员理解的含义相同，除非另外特别定义。还应当理解，在诸如通用字典中定义的术语应当被解释为具有与它们在相关技术的上下文中的含义相一致的含义，而不应用理想化或极度形式化的意义来解释，除非这里明确地这样定义。
对于相关领域普通技术人员已知的技术、方法和设备可能不作详细讨论，但在适当情况下，所述技术、方法和设备应当被视为说明书的一部分。
发明人注意到，显示面板的非显示区的基板上的无机层的某些区域未被封装层覆 盖，这些区域由于各种原因(例如制造、运输等)可能会破损。
相关技术中，非显示区的基板的表面为平面，无机层与的基板的结合力较小。一旦无机层的某些区域破损，从破损处进入无机层与基板的界面的水汽和氧气容易使得无机层与基板分离，进而使得水汽和氧气沿着无机层与基板分离的通道进入显示区。最终，进入显示区的水汽和氧气会降低显示面板的显示效果。
为了解决上述问题，本公开实施例提供了如下技术方案。
图1是示出根据本公开一些实施例的显示面板的结构示意图。
如图1所示，显示面板包括显示区101和围绕显示区101的非显示区102。
非显示区102包括基板112，基板112的至少部分表面为非平面。作为一些示例，基板112的非平面例如可以是呈波浪形貌的面。例如，基板112的至少部分表面具有凸起和凹陷中的至少一种非平面形貌特征。应理解，这里提及的凸起/凹陷是相对于基板112的平面表面而言为凸起/凹陷。
在一些实施例中，基板112可以包括第一柔性基板层10、第二柔性基板层30、以及位于第一柔性基板层10和第二柔性基板层30之间的阻挡层20。第二柔性基板层30远离第一柔性基板层10的至少部分表面可以为非平面。作为示例，第一柔性基板层10和第二柔性基板层30的材料例如可以包括聚酰亚胺(PI)等有机材料。作为示例，阻挡层20的材料例如可以包括氧氮化硅等无机材料。阻挡层20一方面可以使得基板112不易弯曲，另一方面可以阻挡水汽和氧气从基板112的下方进入显示区101中。
非显示区102还包括保形地位于基板112一侧、且与基板112的非平面(即上述至少部分表面)接触的无机层122。在一些实施例中，无机层102可以包括第一无机层40和位于第一无机层40远离基板112一侧的第二无机层50。这种情况下，第一无机层40可以与基板112的非平面接触。作为一些实现方式，第一无机层40和第二无机层50中的一个的材料可以包括氮化硅，另一个的材料可以包括氮氧化硅。无机层102可以阻挡水汽和氧气通过基板112进入显示区101中的薄膜晶体管。
上述实施例中，非显示区的基板的至少部分表面为非平面，并且无机层保形地位于基板一侧且与基板的非平面接触。这样的显示面板提高了非显示区中无机层和基板之间的结合力，使得无机层和基板不容易分离。如此，可以降低进入无机层和基板分离后的通道中的水汽和氧气的可能性，减小水汽和氧气对显示区性能的不利影响，提高显示面板的显示效果。
在一些实施例中，参见图1，非显示区102还包括位于无机层122远离基板112一侧的封装层132。在一些实施例中，封装层132可以是包括第一阻挡层60、第二阻挡层80、以及位于第一阻挡层60和第二阻挡层80之间的缓冲层70的薄膜封装层。第一阻挡层60和第二阻挡层80的材料例如可以包括无机材料，缓冲层70的材料例如可以包括有机材料。
需要说明的是，图1示出的封装层132还可以覆盖显示区101中的发光器件111。发光器件111例如可以包括第一电极层、第二电极层、以及位于第一电极层和第二电极层之间的发光层。发光器件111还可以包括电子传输层、电子注入层、空穴传输层、空穴注入层中的一层或多层。在一些实施例中，发光器件111例如可以是OLED或量子点发光二极管(QLED)。
应理解，显示区101中的发光器件111与无机层122之间、以及非显示区102中的封装层132与无机层122之间可以设置有布线层。例如，布线层可以包括栅极电介质层、层间绝缘层、平坦化层等无机层中的一层或多层。
在一些实现方式中，基板112未被封装层132覆盖的部分的表面为非平面，如图1所示。换言之，可以以封装层132的边缘作为界线，基板112位于封装层132的边缘远离显示区101一侧的部分的表面可以为非平面。这样的结构提高了无机层102和基板112之间的结合力，使得无机层102和基板112不容易分离，并且容易实现。
在另一些实施例中，参见图1，非显示区102还可以包括位于无机层122远离基板112一侧的至少一个围堰142。围堰142被配置为阻挡封装层132中的缓冲层70在制备过程中的流动。这里，封装层132覆盖围堰142、且与无机层122的部分接触。例如，第一阻挡层60和第二阻挡层80可以覆盖围堰142的表面。在一些实施例中，围堰142可以包括第一围堰1421和位于第一围堰1421远离显示区101一侧的第二围堰1422。在某些实施例中，第二围堰1422的高度可以大于第一围堰1421的高度，以更有效地阻挡缓冲层70在制备过程中的流动。应理解，这里的高度指在从基板112到无机层122的方向上的高度。
作为示例，围堰142可以在形成显示面板的像素界定层和平坦化层的过程中形成。即，围堰142可以包括像素界定层和平坦化层中的一层或多层。
在某些实现方式中，无机层122与封装层132接触的部分的至少部分表面可以为非平面，下面结合图2进行说明。
图2是示出根据本公开另一个实施例的显示面板的结构示意图。
如图2所示，无机层122位于第一围堰1421和第二围堰1422之间的部分的表面为非平面。这样的显示面板可以增加无机层122与封装层132之间的结合力，使得无机层122与封装层132不容易分离，降低水汽和氧气通过无机层122和封装层132分离后的通道进入显示区101的可能性，进一步提高了显示面板的显示效果。
例如，第一围堰1421和第二围堰1422在基板112上的投影分别为第一投影和第二投影。基板112位于第一投影和第二投影之间的部分的表面可以为非平面。这使得保形地形成在这部分上的无机层122的表面可以为非平面。
又例如，基板112位于第一投影和第二投影之间的部分的表面可以为平面。无机层122位于第一围堰1421和第二围堰1422之间的部分的表面可以通过额外的处理变为非平面。
图3是示出根据本公开又一个实施例的显示面板的结构示意图。
如图3所示，非显示区102的基板112的表面的全部可以为非平面。这样的显示面板更进一步提高了无机层122和基板112之间的结合力、以及无机层122与封装层132之间的结合力，从而进一步提高了显示面板的显示效果。
本公开还提供了上述各实施例的显示面板的制造方法。制造方法包括形成显示区和围绕显示区的非显示区。下面将结合图4对形成非显示区的过程进行说明。
图4是示出根据本公开一些实施例的显示面板的制造方法中形成非显示区的流程示意图。
在步骤402，提供基板。基板例如可以包括第一柔性基板层、第二柔性基板层、以及位于第一柔性基板层和第二柔性基板层之间的阻挡层。
在步骤404，对基板的至少部分表面进行处理，以使得该至少部分表面为非平面。
上述处理例如可以包括刻蚀、压印或二者的结合。在一些实施例中，被处理后的表面可以具有凸起和凹陷中的至少一种。作为示例，被处理后的表面可以呈波浪形貌。
例如，可以对第二柔性基板层的至少部分表面进行处理，以使得被处理后的表面为非平面。
在步骤406，形成保形地位于基板一侧、且与基板的非平面接触的无机层。
在一些实现方式中，无机层可以包括保形地位于基板上的第一无机层和保形地位于第一无机层上的第二无机层。第一无机层与基板的非平面(例如第二柔性基板层的非平面)接触。
在一些实施例中，在形成无机层后，还可以形成位于无机层远离基板一侧的封装 层，例如薄膜封装层。在某些实施例中，基板未被封装层覆盖的部分的表面可以为非平面。
在一些实施例中，在形成封装层之前，还可以形成位于无机层远离基板一侧的至少一个围堰，例如第一围堰和位于第一围堰远离显示区一侧的第二围堰。封装层可以覆盖该至少一个围堰、且与无机层的部分接触。
在一些实施例中，无机层与封装层接触的部分的至少部分表面可以为非平面，以增大无机层与封装层之间的结合力。例如，无机层位于第一围堰和第二围堰之间的部分的表面可以为非平面。
本公开还提供了一种显示装置，显示装置可以包括上述任意一个实施例的显示面板。在一些实施例中，显示装置例如可以是移动终端、电视机、显示器、笔记本电脑、数码相框、导航仪、电子纸等任何具有显示功能的产品或部件。
至此，已经详细描述了本公开的各实施例。为了避免遮蔽本公开的构思，没有描述本领域所公知的一些细节。本领域技术人员根据上面的描述，完全可以明白如何实施这里公开的技术方案。
虽然已经通过示例对本公开的一些特定实施例进行了详细说明，但是本领域的技术人员应该理解，以上示例仅是为了进行说明，而不是为了限制本公开的范围。本领域的技术人员应该理解，可在不脱离本公开的范围和精神的情况下，对以上实施例进行修改或者对部分技术特征进行等同替换。本公开的范围由所附权利要求来限定。

Claims (20)

  1. 一种显示面板，包括显示区和围绕所述显示区的非显示区，所述非显示区包括：
    基板，所述基板的至少部分表面为非平面；和
    保形地位于所述基板一侧、且与所述至少部分表面接触的无机层。
  2. 根据权利要求1所述的显示面板，还包括：
    位于所述无机层远离所述基板一侧的封装层，其中，所述基板未被所述封装层覆盖的部分的表面为非平面。
  3. 根据权利要求2所述的显示面板，其中，所述非显示区还包括：
    位于所述无机层远离所述基板一侧的至少一个围堰，所述封装层覆盖所述至少一个围堰、且与所述无机层的部分接触。
  4. 根据权利要求3所述的显示面板，其中，所述无机层与所述封装层接触的部分的至少部分表面为非平面。
  5. 根据权利要求4所述的显示面板，其中，所述至少一个围堰包括第一围堰和位于所述第一围堰远离所述显示区一侧的第二围堰，所述无机层位于所述第一围堰和所述第二围堰之间的部分的表面为非平面。
  6. 根据权利要求5所述的显示面板，其中，所述第二围堰的高度大于所述第一围堰的高度。
  7. 根据权利要求1所述的显示面板，其中，所述至少部分表面具有凸起和凹陷中的至少一种。
  8. 根据权利要求1-7任意一项所述的显示面板，其中，所述基板包括第一柔性基板层、第二柔性基板层、以及位于所述第一柔性基板层和所述第二柔性基板层之间的 阻挡层，其中，所述第二柔性基板层远离所述第一柔性基板层的所述至少部分表面为非平面。
  9. 根据权利要求8所述的显示面板，其中，所述无机层包括第一无机层和位于所述第一无机层远离所述基板一侧的第二无机层，所述第一无机层与所述至少部分表面接触。
  10. 根据权利要求8所述的显示面板，其中，所述第一柔性基板层和所述第二柔性基板层中的每一个的材料包括有机材料，所述阻挡层的材料包括无机材料。
  11. 根据权利要求9所述的显示面板，其中，所述第一无机层和所述第二无机层中的一个的材料包括氮化硅，另一个的材料包括氮氧化硅。
  12. 一种显示面板的制造方法，包括形成显示区和围绕所述显示区的非显示区，所述形成非显示区包括：
    提供基板；
    对所述基板的至少部分表面进行处理，以使得所述至少部分表面为非平面；和
    形成保形地位于所述基板一侧、且与所述至少部分表面接触的无机层。
  13. 根据权利要求12所述的方法，还包括：
    形成位于所述无机层远离所述基板一侧的封装层，其中，所述基板未被所述封装层覆盖的部分的表面为非平面。
  14. 根据权利要求13所述的方法，还包括：
    在形成所述封装层之前，形成位于所述无机层远离所述基板一侧的至少一个围堰，所述封装层覆盖所述至少一个围堰、且与所述无机层的部分接触。
  15. 根据权利要求14所述的方法，其中，所述无机层与所述封装层接触的部分的至少部分表面为非平面。
  16. 根据权利要求15所述的方法，其中：
    所述至少一个围堰包括第一围堰和位于所述第一围堰远离所述显示区一侧的第二围堰，所述无机层位于所述第一围堰和所述第二围堰之间的部分的表面为非平面。
  17. 根据权利要求16所述的方法，其中，所述第二围堰的高度大于所述第一围堰的高度。
  18. 根据权利要求12所述的方法，其中，所述至少部分表面具有凸起和凹陷中的至少一种。
  19. 根据权利要求12所述的方法，其中，所述处理包括刻蚀和压印中的至少一种。
  20. 一种显示装置，包括：如权利要求1-11任意一项所述的显示面板。
PCT/CN2019/111226 2018-11-19 2019-10-15 显示面板及其制造方法、显示装置 WO2020103610A1 (zh)

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