WO2020095371A1 - Dispositif à semi-conducteur - Google Patents

Dispositif à semi-conducteur Download PDF

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Publication number
WO2020095371A1
WO2020095371A1 PCT/JP2018/041253 JP2018041253W WO2020095371A1 WO 2020095371 A1 WO2020095371 A1 WO 2020095371A1 JP 2018041253 W JP2018041253 W JP 2018041253W WO 2020095371 A1 WO2020095371 A1 WO 2020095371A1
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WO
WIPO (PCT)
Prior art keywords
semiconductor device
semiconductor
unit
short
semiconductor elements
Prior art date
Application number
PCT/JP2018/041253
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English (en)
Japanese (ja)
Inventor
匠太 田代
伊東　弘晃
優太 市倉
渡邉　尚威
田多　伸光
麻美 水谷
関谷　洋紀
久里　裕二
尚隆 飯尾
Original Assignee
株式会社 東芝
東芝エネルギーシステムズ株式会社
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Priority to PCT/JP2018/041253 priority Critical patent/WO2020095371A1/fr
Publication of WO2020095371A1 publication Critical patent/WO2020095371A1/fr

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
    • H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
    • H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode

Definitions

  • the present embodiment relates to a semiconductor device for power control.
  • a large-scale power converter is used for the DC power transmission system in the power system.
  • These power converters convert a voltage that turns alternating current into direct current and direct current into alternating current.
  • these power converters convert a voltage for stepping up or stepping down a DC voltage. The conversion of these voltages is performed by switching the supplied power by a semiconductor device provided in the power converter.
  • the semiconductor device as described above is configured by arranging a switching semiconductor element such as a so-called power element such as an IGBT on a circuit board.
  • the power converter performs power conversion by switching the supplied power with a semiconductor device.
  • a plurality of semiconductor devices are mounted on one power converter. Further, a plurality of switching semiconductor elements such as IGBTs, which are so-called power elements, are arranged in one semiconductor device.
  • the power converter for grid interconnection has multiple semiconductor devices connected in parallel for the purpose of increasing the output current.
  • one of the semiconductor elements constituting the semiconductor device has a short-circuit failure, current is concentrated on the short-circuited semiconductor element and the semiconductor element is destroyed.
  • one power converter is equipped with multiple semiconductor devices and peripheral circuits.
  • the semiconductor element having the short circuit failure generates heat and becomes high in temperature.
  • the short-circuited semiconductor element that constitutes the semiconductor device bears an excessive short-circuit current and becomes hot and is destroyed.
  • the components of the semiconductor device may be scattered due to the destruction of the semiconductor element that has a short-circuit fault, and the non-faulty semiconductor device arranged in the periphery or the peripheral circuit may be destroyed. It is not desirable that a short-circuit failure of one semiconductor device destroys a semiconductor device that has not failed or peripheral circuits.
  • the present embodiment provides a semiconductor device that can reduce the possibility that a non-faulty peripheral portion arranged in the vicinity of the semiconductor device will be destroyed when a semiconductor element constituting the semiconductor device has a short-circuit fault.
  • the purpose is to
  • the semiconductor device 1 of this embodiment is characterized by having the following configuration.
  • (1) A plurality of semiconductor elements that switch the supplied voltage.
  • (2) A detection unit that detects a short circuit current of the plurality of semiconductor elements.
  • (3) When the detection unit detects a short-circuit current of at least one semiconductor element among the plurality of semiconductor elements, one of the plurality of semiconductor elements that outputs a current of the same polarity is brought into a conductive state. Control unit.
  • FIG. 1 is a diagram showing a configuration of a semiconductor device according to a first embodiment.
  • FIG. 3 is a diagram showing a configuration of a detection unit of the semiconductor device according to the first embodiment.
  • FIG. 3 is a diagram showing a configuration of a control unit of the semiconductor device according to the first embodiment.
  • FIG. 3 is a diagram showing an operation of a control unit of the semiconductor device according to the first embodiment.
  • FIG. 3 is a diagram showing the operation of the detection unit of the semiconductor device according to the first embodiment.
  • FIG. 3 is a diagram showing a temperature rise of the semiconductor device according to the first embodiment.
  • FIG. 3 is a diagram showing a configuration of a semiconductor device according to a modified example of the first embodiment. The figure which shows the structure of the semiconductor device concerning 2nd Embodiment.
  • FIG. 3 is a diagram showing a configuration of a detection unit of a semiconductor device according to a second embodiment.
  • FIG. 6 is a diagram showing the operation of the detection unit of the semiconductor device according to the second embodiment.
  • the configuration of the semiconductor device 1 of this embodiment will be described below with reference to FIGS. 1 to 3.
  • the semiconductor device 1 is assumed to be a semiconductor device having eight semiconductor elements 2 for AC / DC conversion.
  • the same numbers are given to the description, and the description is the same for each device and member having the same configuration. Make a distinction by adding an alphabetic (lowercase) subscript to the number.
  • the semiconductor elements 2a to 2h, the resistors 3a to 3h, the detection units 4a to 4h, and the inductances 6a to 6h have the same configuration.
  • the semiconductor device 1 includes a plurality of semiconductor elements 2 (2a to 2h), resistors 3 (3a to 3h), detection units 4 (4a to 4h), a control unit 5, an inductance 6 (6a to 6h), a terminal 9 (9a). , 9b).
  • the semiconductor element 2 (2a to 2h), the resistor 3 (3a to 3h), the detection unit 4 (4a to 4h), the control unit 5, the inductance 6 (6a to 6h), and the terminal 9 (9a, 9b) are semiconductor devices. 1 are arranged on the same substrate (not shown in the figure) that configures 1.
  • the terminal 9 is an input / output terminal provided in the semiconductor device 1.
  • the terminal 9 is made of a conductive material such as aluminum.
  • the terminal 9 is exposed on the side surface of the semiconductor device 1.
  • the terminal 9a is an input terminal.
  • the terminal 9a is electrically connected to an external power generation device or power distribution device. AC power is input to the terminal 9a from a power generation device or a power distribution device.
  • the terminal 9b is an output terminal.
  • the terminal 9b is electrically connected to an external load.
  • the terminal 9b outputs DC power to the load.
  • the semiconductor element 2 is a switching semiconductor element called a power element.
  • the semiconductor element 2 is composed of an element such as an IGBT.
  • the semiconductor element 2 may be, for example, a MOS-FET, a GTO (gate turn-off transistor), a thyristor, a diode, or a combination thereof.
  • the semiconductor elements 2a to 2d are electrically connected in parallel between the terminals 9a and 9b via the inductances 6a to 6d and the resistors 3a to 3d, respectively.
  • the collectors of the semiconductor elements 2a to 2d are connected to the terminal 9a via the inductances 6a to 6d, respectively.
  • the emitters of the semiconductor elements 2a to 2d are connected to the terminal 9b via the resistors 3a to 3d, respectively.
  • the gates of the semiconductor elements 2a to 2d are connected to the control unit 5.
  • the semiconductor elements 2a to 2d are controlled by the control unit 5 to convert positive power of AC power supplied to the terminal 9a into DC power by switching and output the DC power.
  • the semiconductor elements 2a to 2d form an upper arm of the semiconductor device 1.
  • the semiconductor elements 2e to 2h are electrically connected in parallel between the terminals 9a and 9b via the inductances 6e to 6h and the resistors 3e to 3h, respectively.
  • the collectors of the semiconductor elements 2e to 2h are connected to the terminal 9b via the inductances 6e to 6h, respectively.
  • the emitters of the semiconductor elements 2e to 2h are connected to the terminal 9a via the resistors 3e to 3h and the smoothing unit 8, respectively.
  • the gates of the semiconductor elements 2e to 2h are connected to the control unit 5.
  • the semiconductor elements 2e to 2h are controlled by the control unit 5 to convert negative power of the AC power supplied to the terminal 9a into DC power by switching and output the DC power from the terminal 9b.
  • the semiconductor elements 2e to 2h form a lower arm of the semiconductor device 1.
  • the resistors 3 (3a to 3h) are composed of members such as winding resistors.
  • the resistor 3 may be configured by a pattern of a substrate (not shown in the figure) that constitutes the semiconductor device 1.
  • the resistor 3 may be configured by the parasitic impedance in the wiring connected to the plurality of semiconductor elements 2.
  • the resistors 3a to 3h are connected to the emitters of the semiconductor elements 2a to 2h, respectively.
  • the resistor 3 has a resistance value of several milliohms to several ohms.
  • the resistor 3 converts a current flowing through the semiconductor element 2 into a voltage.
  • the current converted into a voltage by the resistor 3 is detected by the detection unit 4.
  • the detection unit 4 detects the short-circuit current flowing through the semiconductor element 2.
  • the inductance 6 (6a to 6h) is a parasitic inductance in the wiring formed by the pattern on the substrate (not shown in the drawing).
  • the inductance 6 may be composed of a member such as a coil.
  • the inductors 6a to 6h are connected to the collectors of the semiconductor elements 2a to 2h, respectively.
  • the inductance 6 (6a to 6h) is a parasitic inductance, but it reduces the inrush current when the semiconductor elements 2a to 2h become conductive and non-conductive.
  • the detection unit 4 is composed of a detection circuit that detects a short-circuit current flowing through the semiconductor element 2.
  • the input side of the detection unit 4 is connected to the resistor 3.
  • the output side of the detection unit 4 is connected to the control unit 5.
  • the detectors 4a to 4h are connected to the resistors 3a to 3h provided for the semiconductor elements 2a to 2h, respectively.
  • the detection units 4a to 4h measure the potential difference across the resistors 3a to 3h, respectively, and detect the short-circuit current of the semiconductor elements 2a to 2h.
  • the detection units 4a to 4h detect the short-circuit current of the semiconductor elements 2a to 2h and output it to the control unit 5.
  • the configuration of the detection unit 4 is shown in FIG.
  • the detection unit 4 includes a current conversion unit 41, a multiplication unit 42, an integration unit 43, and a comparison unit 44.
  • the current conversion unit 41 is composed of a voltage-current conversion circuit.
  • the input side of the current converter 41 is connected to the resistor 3.
  • the output side of the current converter 41 is connected to the multiplier 42.
  • the current converter 41 measures a voltage value V1 which is a potential difference across the resistor 3, converts the voltage value V1 into a current value I1, and outputs the current value I1.
  • the resistance value of the resistor 3 is a constant value. Therefore, the current converter 41 may be configured by an amplifier circuit having a constant amplification factor or an attenuator circuit having a constant attenuation factor. The current value I1 converted by the current converter 41 is input to the multiplier 42.
  • the multiplication unit 42 is composed of a multiplication circuit.
  • the multiplication unit 42 may be configured by an analog multiplication circuit such as time division multiplication, or may be configured by a digital multiplication circuit by which a signal digitally converted by the analog-digital converter is multiplied. Good.
  • the input side of the multiplication unit 42 is connected to the resistor 3 and the current conversion unit 41.
  • the output side of the multiplication unit 42 is connected to the integration unit 43.
  • the power value W1 is the power consumption of the resistor 3.
  • the power value W1 calculated by the multiplication unit 42 is input to the integration unit 43.
  • the integrating unit 43 is composed of an integrating circuit.
  • the integrating unit 43 may be configured by an analog integrating circuit such as an integrating circuit using an operational amplifier, or may be configured by a digital integrating circuit to which signals digitally converted by an analog-digital converter are sequentially added. May be
  • the input side of the integration unit 43 is connected to the multiplication unit 42.
  • the output side of the integration unit 43 is connected to the comparison unit 44.
  • the integrating unit 43 integrates the power value W1 calculated by the multiplying unit 42 to calculate the integrated value SW1.
  • the integrating unit 43 clears the integrated value SW1 at regular time intervals.
  • the integrated value SW1 is an integrated power value that is an integrated value of the power consumed by the resistor 3 for a certain period of time.
  • the integrated value SW1 integrated by the integration unit 43 is input to the comparison unit 44.
  • the integrating unit 43 may integrate the current value I1 converted by the current converting unit 41 for a certain period of time to calculate an integrated value.
  • the comparison unit 44 is composed of a comparison circuit.
  • the comparison unit 44 may be configured by an analog comparison circuit such as a comparator circuit using an operational amplifier, or may be configured by a digital comparison circuit that compares signals digitally converted by an analog-digital converter. It may be.
  • the input side of the comparison unit 44 is connected to the integration unit 43.
  • the output side of the comparison unit 44 is connected to the control unit 5.
  • the comparing unit 44 determines whether the integrated value SW1 integrated by the integrating unit 43 is equal to or greater than a preset value.
  • the comparison unit 44 determines whether the integrated value SW1 is the reference value Vth or more applied to the voltage value input from the outside.
  • the comparison unit 44 determines that the current of the semiconductor element 2 is a short-circuit current, and outputs the detection signal M1 at high level.
  • the high-level detection signal M1 is a signal indicating a logic "1" such as + 15V.
  • the comparison unit 44 determines that the current of the semiconductor element 2 is not a short-circuit current, and outputs the detection signal M1 at low level.
  • the low-level detection signal M1 is a signal indicating a logic "0" such as -15V.
  • the comparison unit 44 determines whether the integrated value SW1 is equal to or larger than the reference value Vth applied to the digital value input from the outside.
  • the current of the semiconductor element 2 is determined to be a short circuit current, and the high level detection signal M1 is output.
  • the integrated value SW1 is less than the reference value Vth, it is determined that the current of the semiconductor element 2 is not a short circuit current, and the detection signal M1 that is a low level is output.
  • the detection signal M1 output from the comparison unit 44 is input to the control unit 5.
  • the detection units 4a to 4h detect the short-circuit currents of the semiconductor elements 2a to 2h, respectively.
  • the detection units 4a to 4h output detection signals M1a to M1h indicating the presence / absence of a short circuit current to each of the semiconductor elements 2a to 2h to the control unit 5.
  • the reference value Vth may be commonly supplied to the detection units 4a to 4h from one reference voltage generation source (not shown in the figure).
  • the control unit 5 is composed of a gate circuit that performs a logical operation of a digital signal.
  • the input side of the control unit 5 is connected to the detection unit 4 (4a to 4h).
  • the output side of the control unit 5 is connected to the gates of the semiconductor elements 2 (2a to 2h).
  • the control unit 5 controls conduction and non-conduction of the semiconductor element 2 (2a to 2h) according to the detection signals M1a to M1h output from the detection unit 4 (4a to 4h).
  • the configuration of the control unit 5 is shown in FIG.
  • the control unit 5 includes a calculation unit 51 and a calculation unit 52.
  • the operation unit 51 is composed of a gate circuit that performs a logical operation of digital signals.
  • the input side of the calculation unit 51 is connected to the detection units 4a to 4d.
  • the input side of the arithmetic unit 51 is connected to a PWM modulator (not shown) that supplies a pulse width modulation (PWM) signal to the semiconductor element 2.
  • PWM pulse width modulation
  • the output side of the arithmetic unit 51 is connected to the semiconductor elements 2a to 2d.
  • the calculation unit 51 calculates the logical sum (OR) of the detection signals M1a to M1d output from the comparison units 44a to 44d of the detection units 4a to 4d and the pulse width modulation signal PWM1 supplied from the PWM modulation unit, and controls them.
  • the signal N1 is output.
  • the control signal N1 logically operated by the operation unit 51 is input to the gates of the semiconductor elements 2a to 2d forming the upper arm of the semiconductor device 1.
  • the operation unit 51 performs the logical operation shown in FIG. That is, when any of the detection signals M1a to M1d output from the comparison units 44a to 44d of the detection units 4a to 4d is at the high level, the calculation unit 51 outputs the pulse width modulation signal PWM1 supplied from the PWM modulation unit. Regardless of the logic, a high level control signal N1 is output to bring the semiconductor elements 2a to 2d forming the upper arm of the semiconductor device 1 into conduction.
  • the calculation unit 51 outputs the pulse width modulation signal PWM1 supplied from the PWM modulation unit.
  • the logic control signal N1 is output to bring the semiconductor elements 2a to 2d forming the upper arm of the semiconductor device 1 into a conductive state and a non-conductive state.
  • the calculation unit 52 calculates the logical sum (OR) of the detection signals M1e to M1h output from the comparison units 44e to 44h of the detection units 4e to 4h and the pulse width modulation signal PWM2 supplied from the PWM modulation unit, and controls them.
  • the signal N2 is output.
  • the control signal N2 logically operated by the operation unit 52 is input to the gates of the semiconductor elements 2e to 2h forming the lower arm of the semiconductor device 1.
  • the calculation unit 52 uses the logic of the pulse width modulation signal PWM2 supplied from the PWM modulation unit. Regardless, the control signal N2 at a high level is output to bring the semiconductor elements 2e to 2h forming the lower arm of the semiconductor device 1 into the conductive state.
  • the calculation unit 52 outputs the pulse width modulation signal PWM2 supplied from the PWM modulation unit.
  • the logic control signal N2 is output to bring the semiconductor elements 2e to 2h forming the lower arm of the semiconductor device 1 into a conductive state and a non-conductive state.
  • the smoothing unit 8 is a smoothing circuit composed of passive elements. One of the smoothing parts 8 is connected to a terminal 9a which is an input terminal, and the other is connected to a terminal 9b which is an output terminal.
  • the smoothing unit 8 has an inductance 81 and a capacitor 82.
  • the inductance 81 is a member configured by a winding coil.
  • the capacitor 82 is a member formed of an electrolytic capacitor. The inductance 81 and the capacitor 82 of the smoothing unit 8 cooperate to smooth the switching waveform of the semiconductor element 2.
  • the detection units 4a to 4h measure the potential difference across the resistors 3a to 3h, respectively, and detect the short-circuit current of the semiconductor elements 2a to 2h.
  • the detection units 4a to 4h output low-level detection signals M1a to M1h from the respective comparison units 44a to 44h to the control unit 5 indicating that the short-circuit current is not detected. To do.
  • the current converter 41 of the detector 4 measures a voltage value V1 which is a potential difference across the resistor 3 and converts it into a current value I1 for output.
  • the current value I1 converted by the current converter 41 is input to the multiplier 42.
  • the power value W1 is the power consumption of the resistor 3.
  • the power value W1 calculated by the multiplication unit 42 is input to the integration unit 43.
  • the integrating unit 43 of the detecting unit 4 integrates the power value W1 calculated by the multiplying unit 42 for a certain period of time to calculate an integrated value SW1.
  • the integrated value SW1 is an integrated power value that is an integrated value of the power consumed by the resistor 3 for a certain period of time.
  • the integrated value SW1 integrated by the integration unit 43 is input to the comparison unit 44.
  • the comparison unit 44 of the detection unit 4 determines whether the integrated value SW1 integrated by the integration unit 43 is equal to or greater than a preset reference value Vth. When the short circuit current flowing through the semiconductor element 2 is not detected, the integrated value SW1 becomes less than the reference value Vth.
  • the comparison units 44a to 44h of the detection units 4a to 4h determine that the currents of the semiconductor elements 2a to 2h are not short-circuit currents, and output the detection signals M1a to M1h at low level.
  • the detection signals M1a to M1h output from the comparison units 44a to 44h are input to the control unit 5.
  • the calculation unit 51 of the control unit 5 logically calculates the detection signals M1a to M1d output from the comparison units 44a to 44d of the detection units 4a to 4d and the pulse width modulation signal PWM1 supplied from the PWM modulation unit to obtain a control signal. Output N1.
  • the arithmetic unit 51 performs the logical operation shown in FIG.
  • the calculation unit 51 depends on the logic of the pulse width modulation signal PWM1 supplied from the PWM modulation unit.
  • the control signal N1 is output to bring the semiconductor elements 2a to 2d forming the upper arm of the semiconductor device 1 into a conductive state and a non-conductive state.
  • the semiconductor elements 2a to 2d perform normal PWM modulation in which a short circuit current is not detected and output electric power.
  • the calculation unit 52 of the control unit 5 logically calculates the detection signals M1e to M1h output from the comparison units 44e to 44h of the detection units 4e to 4h and the pulse width modulation signal PWM2 supplied from the PWM modulation unit, and outputs a control signal. Output N2.
  • the calculation unit 52 uses the logic of the pulse width modulation signal PWM2 supplied from the PWM modulation unit.
  • the control signal N2 is output to bring the semiconductor elements 2e to 2h forming the lower arm of the semiconductor device 1 into a conductive state and a non-conductive state.
  • the semiconductor elements 2e to 2h perform normal PWM modulation in which a short circuit current is not detected and output electric power.
  • the detection units 4a to 4h measure the potential difference across the resistors 3a to 3h, respectively, and detect the short-circuit current of the semiconductor elements 2a to 2h. When the semiconductor element 2a is destroyed and a short circuit current flows, the detection unit 4a detects the short circuit current flowing in the semiconductor element 2a. The detection unit 4a outputs a high-level detection signal M1a indicating that the short-circuit current is detected from the comparison unit 44a to the control unit 5.
  • the current converter 41 of the detector 4 measures a voltage value V1 which is a potential difference across the resistor 3 and converts it into a current value I1 for output.
  • the current converter 41a of the detector 4a measures a voltage value V1a, which is the potential difference across the resistor 3a that is directly proportional to the short-circuit current, and converts it to a current value I1a and outputs it.
  • the current value I1a converted by the current converter 41a is input to the multiplier 42a.
  • the power value W1a is the power consumption consumed by the resistor 3a.
  • the power value W1a calculated by the multiplication unit 42a is input to the integration unit 43a.
  • the integrating unit 43a of the detecting unit 4a integrates the power value W1a calculated by the multiplying unit 42a for a certain period of time to calculate the integrated value SW1a.
  • the integrated value SW1a is an integrated power value that is an integrated value of the power consumed by the resistor 3a for a certain period of time.
  • the integrated value SW1a integrated by the integration unit 43 is input to the comparison unit 44.
  • the comparing unit 44a of the detecting unit 4a determines whether the integrated value SW1a integrated by the integrating unit 43a is equal to or greater than a preset value.
  • the operation of the comparison unit 44a of the detection unit 4a is shown in FIG.
  • the power value W1a calculated by the multiplication unit 42a is sequentially integrated by the integration unit 43a, and the integration value SW1a becomes equal to or greater than the reference value Vth at time T2.
  • the comparison unit 44a of the detection unit 4a determines that the current of the semiconductor element 2a is a short-circuit current, and outputs the detection signal M1a at high level at time T2.
  • the detection signal M1a output from the comparison unit 44a is input to the control unit 5.
  • the calculation unit 51 of the control unit 5 logically calculates the high level detection signal M1a output from the comparison unit 44a of the detection unit 4a and the pulse width modulation signal PWM1 supplied from the PWM modulation unit, and outputs the control signal N1. Output.
  • the arithmetic unit 51 performs the logical operation shown in FIG.
  • N1 is output to bring the semiconductor elements 2a to 2d forming the upper arm of the semiconductor device 1 into a conductive state.
  • the calculation unit 52 outputs the pulse width modulation signal PWM2 supplied from the PWM modulation unit.
  • the logic control signal N2 is output to continue the operation of bringing the semiconductor elements 2e to 2h forming the lower arm of the semiconductor device 1 into the conductive state and the non-conductive state.
  • FIG. 6 shows the temperature rise of the semiconductor elements 2a to 2d of the semiconductor device 1.
  • the semiconductor element 2a is destroyed and a short circuit current flows. Since the short-circuit current flows, the temperature of the semiconductor element 2a rises.
  • the short-circuit current of the semiconductor element 2a is detected by the detection unit 4a, and the semiconductor elements 2a to 2d forming the upper arm of the semiconductor device 1 are made conductive by the control unit 5.
  • the short-circuit current still flows in the semiconductor element 2a, the current flowing in the semiconductor element 2a is distributed to the semiconductor elements 2a to 2d, and the temperature rise is reduced like T2 to T3 in FIG.
  • a safety device (not shown in the figure) is arranged inside the semiconductor device 1, and current supply to the failed semiconductor element 2 or the arm including the failed semiconductor element 2 is stopped by the safety device before time T3. You may do it.
  • a safety device may be arranged outside the semiconductor device 1 so that current supply to the semiconductor device 1 including the semiconductor element 2 that has failed due to the safety device is stopped.
  • it may be necessary to stop the entire semiconductor device 1 or an external device in which the semiconductor device 1 is arranged.
  • the semiconductor element 2a forming the upper arm is destroyed and a short-circuit current is generated.
  • the control unit is also operated. 5, the semiconductor elements 2e to 2h forming the lower arm of the semiconductor device 1 are brought into conduction.
  • the resistor 3 is connected in series for each of the plurality of semiconductor elements 2.
  • the resistor 3 for converting the current flowing through the semiconductor element 2 into a voltage may be connected in series to two or more semiconductor elements 2 among the plurality of semiconductor elements 2. Good.
  • the power value W1 calculated by the multiplication unit 42a of the detection unit 4 is integrated by the integration unit 43 for a certain period of time to calculate the integrated value SW1, and the comparison unit 44 sets the integrated value SW1a in advance. It is determined whether or not the value is equal to or more than the determined value, and the detection signal M1 is output. However, the detection signal M1 is compared by comparing the power value W1 calculated by the multiplication unit 42a of the detection unit 4 with a predetermined value or more without calculating the integration value SW1 by the integration unit 43. It may be output by the unit 44.
  • the current value I1 converted by the current conversion unit 41 of the detection unit 4 is calculated by the multiplication unit 42a without calculating the power value W1 and the integration unit 43 without calculating the integration value SW1. It may be output by the comparison unit 44 by determining whether the value is equal to or greater than a preset value.
  • the semiconductor device 1 includes the plurality of semiconductor elements 2 that switch the supplied voltage, the detection unit 4 that detects the short-circuit current of the plurality of semiconductor elements 2, and the detection unit 4.
  • a control unit 5 which, when a short-circuit current of at least one semiconductor element 2 among the plurality of semiconductor elements 2 is detected, brings the semiconductor element 2 that outputs a current of the same polarity among the plurality of semiconductor elements 2 into a conductive state; Therefore, when the semiconductor element 2 forming the semiconductor device 1 has a short-circuit fault, it is possible to reduce the possibility that the non-faulty peripheral portion arranged in the vicinity of the semiconductor device 1 is destroyed. Can be provided.
  • the semiconductor element 2 forming the semiconductor device 1 When the semiconductor element 2 forming the semiconductor device 1 has a short-circuit fault, the other semiconductor element 2 that outputs the current of the same polarity among the plurality of semiconductor elements 2 is brought into conduction, so that the semiconductor device 1 generates heat. Temperature rise is reduced.
  • the short-circuited semiconductor element 2 that constitutes the semiconductor device 1 bears an excessive short-circuit current and becomes hot and is destroyed.
  • the components of the semiconductor device 1 may be scattered due to the breakdown of the semiconductor element 2 that has a short-circuit fault, and a non-faulty semiconductor device arranged in the periphery or a peripheral circuit may be destroyed.
  • the other semiconductor element 2 which has not short-circuited is brought into the conductive state and the short-circuit current is diverted to the other semiconductor element 2, so that the power consumed in the semiconductor element 2 which has short-circuited has failed. Or the current is reduced.
  • the semiconductor device 1 can be configured with a small package.
  • the components of the semiconductor device are likely to scatter, and the non-faulty peripheral portion is likely to be destroyed. Therefore, the package of the semiconductor device 1 is robust and has a large size.
  • the semiconductor device 1 can be configured with various packages.
  • control unit 5 brings all of the semiconductor elements 2 that output currents of the same polarity out of the plurality of semiconductor elements 2 into the conductive state. It is possible to provide the semiconductor device 1 in which the temperature rise due to heat generation is reduced when the short circuit 2 fails.
  • the semiconductor device 1 can be configured with a small package.
  • the components of the semiconductor device are likely to scatter, and the non-faulty peripheral portion is likely to be destroyed. Therefore, the package of the semiconductor device 1 is robust and has a large size.
  • the semiconductor device 1 can be configured with various packages.
  • the detection unit 4 measures the amount of electricity of the resistor 3 connected in series to the plurality of semiconductor elements 2 and detects the short-circuit current of the semiconductor element 2. It is possible to provide a semiconductor device in which a temperature rise due to heat generation is reduced when a semiconductor element included in the semiconductor device has a short circuit failure. Since the short-circuit current is detected by measuring the quantity of electricity of the resistor 3 connected in series to the plurality of semiconductor elements 2, the short-circuit current can be accurately detected.
  • the resistors 3 are connected in series for each of the plurality of semiconductor elements 2, so that the short-circuit current can be accurately detected.
  • the semiconductor device 1 since the resistor 3 is connected in series to two or more semiconductor elements 2 of the plurality of semiconductor elements 2, the number of resistors 3 mounted on the semiconductor device 1 is increased. Can be reduced. As a result, the semiconductor device 1 can be constructed at low cost.
  • the resistor 3 is configured by the parasitic impedance in the wiring connected to the plurality of semiconductor elements 2, so that the number of components mounted on the semiconductor device 1 can be reduced. .. As a result, the semiconductor device 1 can be constructed at low cost.
  • the detection unit 4 measures the power consumption of the resistor 3 and detects the short-circuit current based on the power consumption, so that the short-circuit current can be detected more accurately.
  • the detection unit 4 measures the current flowing through the resistor 3 and detects the short-circuit current based on the current. Therefore, the detection unit 4 can be configured with a circuit having a small number of parts. .. As a result, the semiconductor device 1 can be constructed at low cost.
  • the detection unit 4 uses the resistor 3 connected in series with the semiconductor element 2 to detect the short-circuit current flowing through the semiconductor element 2.
  • the semiconductor device 1 is different from the semiconductor device 1 in that the resistor 3 is not provided and the short-circuit current flowing in the semiconductor element 2 is detected by the detection unit 7 using the inductance 6 connected in series to the semiconductor element 2.
  • Other configurations of the semiconductor device 1 according to the second embodiment are the same as those of the semiconductor device 1 according to the first embodiment.
  • the inductance 6 (6a to 6h) is a parasitic inductance in the wiring formed by the pattern on the substrate (not shown in the drawing).
  • the inductance 6 may be composed of a member such as a coil.
  • the inductors 6a to 6h are connected to the collectors of the semiconductor elements 2a to 2h, respectively.
  • the inductances 6a to 6h may be connected to the emitters of the semiconductor elements 2a to 2h, respectively.
  • L is the inductance value of the inductance 6.
  • the detection unit 7 includes a detection circuit that detects a short-circuit current flowing through the semiconductor element 2.
  • the input side of the detection unit 7 is connected to the inductance 6.
  • the output side of the detection unit 7 is connected to the control unit 5.
  • the detection units 7a to 7h are connected to the inductances 6a to 6h provided for the semiconductor elements 2a to 2h, respectively.
  • the detection units 7a to 7h measure the potential difference across the inductances 6a to 6h, respectively, and detect the short-circuit current of the semiconductor elements 2a to 2h.
  • the detection units 7a to 7h detect the short-circuit current of the semiconductor elements 2a to 2h and output it to the control unit 5.
  • the configuration of the detection unit 7 is shown in FIG.
  • the detection unit 7 has an integration unit 71, an integration unit 72, and a comparison unit 73.
  • the integrating unit 71 is composed of an integrating circuit.
  • the integrator 71 may be configured by an analog integrator circuit such as an integrator circuit by an operational amplifier, or may be configured by a digital integrator circuit that sequentially adds signals digitally converted by an analog / digital converter. May be
  • the input side of the integration unit 71 is connected to the inductance 6.
  • the output side of the integration unit 71 is connected to the integration unit 72.
  • the integrator 71 measures the voltage value V2, which is the potential difference across the inductance 6, converts it into a current value I2, and outputs it.
  • the integrating unit 72 is composed of an integrating circuit.
  • the integrating unit 72 may be configured by an analog integrating circuit such as an integrating circuit using an operational amplifier, or may be configured by a digital integrating circuit that sequentially adds signals digitally converted by an analog-digital converter. May be
  • the input side of the integrating section 72 is connected to the integrating section 71.
  • the output side of the integrating section 72 is connected to the comparing section 73.
  • the integrating unit 72 integrates the current value I2 calculated by the integrating unit 71 to calculate an integrated value SI2.
  • the integrating unit 72 clears the integrated value SI2 in a fixed time cycle.
  • the integrated value SI2 is an integrated current value that is an integrated value of the current flowing through the semiconductor element 2 for a certain period of time.
  • the integrated value SI2 integrated by the integration unit 72 is input to the comparison unit 73.
  • the comparison unit 73 is composed of a comparison circuit.
  • the comparison unit 73 may be configured by an analog comparison circuit such as a comparator circuit using an operational amplifier, or may be configured by a digital comparison circuit that compares signals digitally converted by an analog-digital converter. It may be.
  • the input side of the comparison unit 73 is connected to the integration unit 72.
  • the output side of the comparison unit 73 is connected to the control unit 5.
  • the comparing unit 73 determines whether the integrated value SI2 integrated by the integrating unit 72 is equal to or greater than a preset value.
  • the comparison unit 73 determines whether the integrated value SI2 is greater than or equal to the reference value Vth.
  • the comparison unit 73 determines that the current of the semiconductor element 2 is a short-circuit current, and outputs the detection signal M1 at a high level.
  • the high-level detection signal M1 is a signal indicating a logic "1" such as + 15V.
  • the comparison unit 73 determines that the current of the semiconductor element 2 is not a short circuit current, and outputs the detection signal M1 at low level.
  • the low-level detection signal M1 is a signal indicating a logic "0" such as -15V.
  • the detection signal M1 output from the comparison unit 73 is input to the control unit 5.
  • the configuration of the control unit 5 is the same as that of the first embodiment.
  • the detection units 7a to 7h measure the potential difference across the inductances 6a to 6h, respectively, and detect the short-circuit current of the semiconductor elements 2a to 2h. When the semiconductor element 2a is destroyed and a short circuit current flows, the detection unit 7a detects the short circuit current flowing in the semiconductor element 2a. The detection unit 7a outputs a high-level detection signal M1a indicating that the short-circuit current is detected from the comparison unit 73a to the control unit 5.
  • the integrator 71a of the detector 7a measures the voltage value V2a, which is the potential difference across the inductance 6a, converts it into a current value I2a, and outputs it.
  • the integrating unit 72a of the detecting unit 7a integrates the current value I2a calculated by the integrating unit 71a for a certain period of time to calculate an integrated value SI2a.
  • the integrated value SI2 is an integrated current value that is an integrated value of the current flowing through the semiconductor element 2 for a certain period of time.
  • the integrated value SI2a integrated by the integration unit 72a is input to the comparison unit 73.
  • the comparing unit 73a of the detecting unit 7a determines whether the integrated value SI2a integrated by the integrating unit 72a is equal to or greater than a preset value.
  • the operation of the comparison unit 73a of the detection unit 7a is shown in FIG.
  • the current value I2a calculated by the integrating unit 71a is sequentially integrated by the integrating unit 72a, and the integrated value SI2a becomes equal to or larger than the reference value Vth at time T2.
  • the comparison unit 73a of the detection unit 7a determines that the current of the semiconductor element 2a is a short-circuit current, and outputs the detection signal M1a at high level at time T2.
  • the detection signal M1a output from the comparison unit 73a is input to the control unit 5.
  • the calculation unit 51 of the control unit 5 logically calculates the high level detection signal M1a output from the comparison unit 73a of the detection unit 7a and the pulse width modulation signal PWM1 supplied from the PWM modulation unit, and outputs the control signal N1. Output.
  • the arithmetic unit 51 performs the logical operation shown in FIG.
  • the calculation unit 51 Since the detection signal M1a output from the comparison unit 73a of the detection unit 7a is at a high level, the calculation unit 51 does not depend on the logic of the pulse width modulation signal PWM1 supplied from the PWM modulation unit, and thus is at a high level. N1 is output to bring the semiconductor elements 2a to 2d forming the upper arm of the semiconductor device 1 into a conductive state.
  • the calculation unit 52 outputs the pulse width modulation signal PWM2 supplied from the PWM modulation unit.
  • the logic control signal N2 is output to continue the operation of bringing the semiconductor elements 2e to 2h forming the lower arm of the semiconductor device 1 into the conductive state and the non-conductive state.
  • FIG. 11 shows the temperature rise of the semiconductor elements 2a to 2d of the semiconductor device 1.
  • the semiconductor element 2a is destroyed and a short circuit current flows. Since the short-circuit current flows, the temperature of the semiconductor element 2a rises.
  • the short-circuit current of the semiconductor element 2a is detected by the detection unit 7a, and the semiconductor elements 2a to 2d forming the upper arm of the semiconductor device 1 are brought into conduction by the control unit 5.
  • the current flowing in the semiconductor element 2a is dispersed in the semiconductor elements 2a to 2d, and the temperature rise is reduced as in T2 to T3 in FIG.
  • the inductance 6 is connected in series for each of the plurality of semiconductor elements 2.
  • the inductance 6 may be connected to two or more semiconductor elements 2 of the plurality of semiconductor elements 2 in series, for example, the upper arm and the lower arm.
  • the current value I2 calculated by the integration unit 71 of the detection unit 7 is integrated by the integration unit 72 for a certain period of time to calculate the integration value SI2, and the comparison unit 73 sets the integration value SI2 in advance. It is determined whether or not the value is equal to or more than the determined value and the detection signal M1 is output. However, the detection signal M1 is compared by calculating whether the current value I2 calculated by the integration unit 71 of the detection unit 7 is a preset value or more without calculating the integration value SI2 by the integration unit 72. It may be output by the unit 73.
  • the semiconductor device 1 includes the plurality of semiconductor elements 2 that switch the supplied voltage, the detection unit 4 that detects the short-circuit current of the plurality of semiconductor elements 2, and the detection unit 4.
  • the control unit 5 that brings the other semiconductor element 2 of the plurality of semiconductor elements 2 that outputs the current of the same polarity into a conductive state. Therefore, when the semiconductor element 2 constituting the semiconductor device 1 has a short-circuit failure, it is possible to reduce the possibility that the non-faulty peripheral portion arranged near the semiconductor device 1 is destroyed.
  • the device 1 can be provided.
  • the semiconductor element 2 forming the semiconductor device 1 When the semiconductor element 2 forming the semiconductor device 1 has a short-circuit fault, the other semiconductor element 2 that outputs the current of the same polarity is brought into a conductive state among the plurality of semiconductor elements 2, so that the semiconductor device 1 generates heat. Temperature rise is reduced.
  • the short-circuited semiconductor element 2 in the semiconductor device 1 bears an excessive short-circuit current and becomes hot and is destroyed. Due to the destruction of the semiconductor element 2 having a short-circuit failure, the components of the semiconductor device 1 may scatter, and a non-failed semiconductor device arranged in the periphery or a peripheral circuit may be destroyed.
  • the other semiconductor element 2 which has not short-circuited is brought into the conductive state and the short-circuit current is diverted to the other semiconductor element 2, so that the power consumed in the semiconductor element 2 which has short-circuited has failed. Or the current is reduced.
  • the semiconductor device 1 can be configured with a small package.
  • the components of the semiconductor device are likely to scatter, and the non-faulty peripheral portion is likely to be destroyed. Therefore, the package of the semiconductor device 1 is robust and large in size.
  • the semiconductor device 1 can be configured with various packages.
  • the control unit 5 brings all of the semiconductor elements 2 that output currents of the same polarity out of the plurality of semiconductor elements 2 into the conductive state, so that the semiconductor elements constituting the semiconductor device It is possible to provide a semiconductor device in which a temperature rise due to heat generation is suppressed when a short circuit failure occurs.
  • the semiconductor element 2 that constitutes the semiconductor device 1 When the semiconductor element 2 that constitutes the semiconductor device 1 has a short circuit failure, all the semiconductor elements 2 that output currents of the same polarity among the plurality of semiconductor elements 2 are brought into a conductive state, and the short circuit current causes another semiconductor element 2 to have a short circuit current. Since the commutation of the semiconductor element 2 with the short-circuit fault is performed, the power or current consumed in the semiconductor element 2 having the short-circuit failure is reduced.
  • the semiconductor device 1 can be configured with a small package.
  • the components of the semiconductor device are likely to scatter, and the non-faulty peripheral portion is likely to be destroyed. Therefore, the package of the semiconductor device 1 is robust and large in size.
  • the semiconductor device 1 can be configured with various packages.
  • the detection unit 4 measures the amount of electricity of the inductance 6 connected in series to the plurality of semiconductor elements 2 and detects the short-circuit current of the semiconductor elements, and thus constitutes a semiconductor device. It is possible to provide a semiconductor device in which a temperature rise due to heat generation is reduced when a semiconductor element has a short circuit failure. Since the short-circuit current is detected by measuring the quantity of electricity of the inductance 6 connected in series to the plurality of semiconductor elements 2, the voltage drop in the element detecting the short-circuit current can be suppressed. As a result, the semiconductor device 1 capable of efficiently converting electric power can be provided.
  • the inductance 6 is connected in series to the plurality of semiconductor elements 2 among the plurality of semiconductor elements 2, so that it is compared with the case where the resistor 3 is used to detect the short-circuit current. The power loss can be reduced.
  • the inductance 6 is connected in series to two or more semiconductor elements 2 of the plurality of semiconductor elements 2, the number of the inductances 6 mounted on the semiconductor device 1 can be reduced. can do. As a result, the semiconductor device 1 can be constructed at low cost.
  • the inductance 6 is composed of the parasitic inductance in the wirings connected to the plurality of semiconductor elements 2, so that the number of components mounted on the semiconductor device 1 can be reduced. As a result, the semiconductor device 1 can be constructed at low cost.
  • the detection unit 4 measures the voltage generated in the inductance 6 and detects the short-circuit current based on the voltage. Therefore, as compared with the case where the resistor 3 is used to detect the short-circuit current, The power loss can be reduced.
  • the semiconductor device 1 is a semiconductor device for AC / DC conversion, but the semiconductor device 1 is a semiconductor device for DC / AC conversion, AC / AC conversion, or DC / DC conversion. It may be.
  • the semiconductor device 1 has eight semiconductor elements 2.
  • the number of semiconductor elements 2 included in the semiconductor device 1 is not limited to this.
  • the semiconductor device 1 may have two or more semiconductor elements 2.

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  • Power Engineering (AREA)
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Abstract

L'invention concerne un dispositif à semi-conducteur qui peut réduire la possibilité qu'une partie périphérique, qui est disposée à proximité du dispositif à semi-conducteur et qui n'est pas défectueuse, soit détruite lorsqu'un élément à semi-conducteur constituant le dispositif à semi-conducteur a un court-circuit. Le dispositif à semi-conducteur (1) comprend : une pluralité d'éléments à semi-conducteur (2) pour commuter une tension fournie ; une unité de détection (4) pour détecter un courant de court-circuit de la pluralité d'éléments à semi-conducteur (2) ; et une unité de commande (5) qui, parmi la pluralité d'éléments à semi-conducteur (2), paramètre les éléments à semi-conducteur (2) qui sortent un courant de la même polarité vers un état conducteur, un tel paramétrage étant réalisé lorsqu'un courant de court-circuit d'au moins un élément à semi-conducteur (2) parmi la pluralité d'éléments à semi-conducteur (2) a été détecté par l'unité de détection (4).
PCT/JP2018/041253 2018-11-06 2018-11-06 Dispositif à semi-conducteur WO2020095371A1 (fr)

Priority Applications (1)

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PCT/JP2018/041253 WO2020095371A1 (fr) 2018-11-06 2018-11-06 Dispositif à semi-conducteur

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WO2020095371A1 true WO2020095371A1 (fr) 2020-05-14

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Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359213B2 (fr) * 1982-03-26 1988-11-18
JP2002014136A (ja) * 2000-06-30 2002-01-18 Tempearl Ind Co Ltd トラッキング短絡の検出方法
WO2011129263A1 (fr) * 2010-04-14 2011-10-20 本田技研工業株式会社 Procédé de protection contre les courts-circuits
JP2013236297A (ja) * 2012-05-10 2013-11-21 Yazaki Corp 半導体スイッチの制御装置
JP2015050553A (ja) * 2013-08-30 2015-03-16 株式会社オートネットワーク技術研究所 半導体装置
JP2017092789A (ja) * 2015-11-13 2017-05-25 株式会社日立製作所 電力変換装置
JP2017112642A (ja) * 2015-12-14 2017-06-22 株式会社デンソー コンバータ装置
JP2018061301A (ja) * 2016-10-03 2018-04-12 株式会社日立製作所 半導体駆動装置ならびにそれを用いた電力変換装置
JP2018107888A (ja) * 2016-12-26 2018-07-05 東芝三菱電機産業システム株式会社 半導体装置の制御装置、方法及び電力変換装置

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359213B2 (fr) * 1982-03-26 1988-11-18
JP2002014136A (ja) * 2000-06-30 2002-01-18 Tempearl Ind Co Ltd トラッキング短絡の検出方法
WO2011129263A1 (fr) * 2010-04-14 2011-10-20 本田技研工業株式会社 Procédé de protection contre les courts-circuits
JP2013236297A (ja) * 2012-05-10 2013-11-21 Yazaki Corp 半導体スイッチの制御装置
JP2015050553A (ja) * 2013-08-30 2015-03-16 株式会社オートネットワーク技術研究所 半導体装置
JP2017092789A (ja) * 2015-11-13 2017-05-25 株式会社日立製作所 電力変換装置
JP2017112642A (ja) * 2015-12-14 2017-06-22 株式会社デンソー コンバータ装置
JP2018061301A (ja) * 2016-10-03 2018-04-12 株式会社日立製作所 半導体駆動装置ならびにそれを用いた電力変換装置
JP2018107888A (ja) * 2016-12-26 2018-07-05 東芝三菱電機産業システム株式会社 半導体装置の制御装置、方法及び電力変換装置

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