WO2020087973A1 - 一种mems螺线管变压器及其制造方法 - Google Patents

一种mems螺线管变压器及其制造方法 Download PDF

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WO2020087973A1
WO2020087973A1 PCT/CN2019/095066 CN2019095066W WO2020087973A1 WO 2020087973 A1 WO2020087973 A1 WO 2020087973A1 CN 2019095066 W CN2019095066 W CN 2019095066W WO 2020087973 A1 WO2020087973 A1 WO 2020087973A1
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Prior art keywords
silicon substrate
core
solenoid
spiral channel
iron
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PCT/CN2019/095066
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English (en)
French (fr)
Inventor
徐天彤
陶智
李海旺
吴瀚枭
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北京航空航天大学
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Priority claimed from CN201811278308.7A external-priority patent/CN109390144B/zh
Priority claimed from CN201811278321.2A external-priority patent/CN109599249B/zh
Application filed by 北京航空航天大学 filed Critical 北京航空航天大学
Priority to US17/290,655 priority Critical patent/US20210358688A1/en
Priority to JP2021523612A priority patent/JP7378166B2/ja
Publication of WO2020087973A1 publication Critical patent/WO2020087973A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/0206—Manufacturing of magnetic cores by mechanical means
    • H01F41/0233—Manufacturing of magnetic circuits made from sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/10—Inductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
    • H01F1/14—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys
    • H01F1/16—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials metals or alloys in the form of sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0013—Printed inductances with stacked layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0033—Printed inductances with the coil helically wound around a magnetic core
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/04—Fixed inductances of the signal type  with magnetic core
    • H01F17/06—Fixed inductances of the signal type  with magnetic core with core substantially closed in itself, e.g. toroid
    • H01F17/062—Toroidal core with turns of coil around it
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/24—Magnetic cores
    • H01F27/245—Magnetic cores made from sheets, e.g. grain-oriented
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F27/00—Details of transformers or inductances, in general
    • H01F27/24—Magnetic cores
    • H01F27/26—Fastening parts of the core together; Fastening or mounting the core on casing or support
    • H01F27/263—Fastening parts of the core together
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F3/00—Cores, Yokes, or armatures
    • H01F3/02—Cores, Yokes, or armatures made from sheets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H01F41/042—Printed circuit coils by thin film techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/02—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets
    • H01F41/04—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for manufacturing cores, coils, or magnets for manufacturing coils
    • H01F41/041—Printed circuit coils
    • H01F41/046—Printed circuit coils structurally combined with ferromagnetic material

Definitions

  • Embodiments of the present application relate to the technical field of micro-electromechanical systems (MEMS), and more specifically, to a MEMS solenoid transformer and a method of manufacturing the same.
  • MEMS micro-electromechanical systems
  • Micro-Electro-Mechanical (MEMS) micro-transformers use the principle of electromagnetic induction to transfer electrical energy between two circuits, consisting of a magnetic core and windings. Compared with conventional transformers, the size of the magnetic core is greatly reduced and the windings The form has also changed. Miniature transformers are widely used in miniature electronic equipment and information equipment, and can play the role of voltage transformation, current transformation, impedance transformation, isolation and voltage stabilization.
  • planar spiral type there are mainly two types of micro-transformers based on MEMS technology, planar spiral type and solenoid type.
  • the structure of the planar spiral transformer increases with the number of winding turns, the diameter of the coil becomes larger, and the total magnetic flux along the iron core does not increase linearly but decreases gradually. Therefore, the number of turns of this structure is generally limited, resulting in this There is a bottleneck in the total power increase of this transformer.
  • the solenoid transformer overcomes the limitation of the number of winding turns.
  • the solenoid transformer makes full use of the vertical space inside the substrate. When the same transformer power is obtained, the chip surface space occupied is smaller, which is conducive to the further development of transformer miniaturization. .
  • the micro-transformers based on MEMS technology use thin film manufacturing process, which is an additive manufacturing method, so most of the structure of the obtained micro-transformer is above the substrate surface, which makes it difficult to guarantee the strength of the transformer.
  • the transformer wire made by the thin film process has a small area and cannot flow large currents, which limits the further improvement of its working power.
  • the vertical height that can be obtained by the thin film manufacturing process is limited, which makes the winding cross-sectional area of the transformer small, resulting in the inductance of the transformer. The value is low and the magnetic flux is small.
  • Embodiments of the present application provide a MEMS toroidal solenoid transformer that overcomes the above problems or at least partially solves the above problems and a method of manufacturing the same.
  • an embodiment of the present application provides a MEMS toroidal solenoid transformer, including: a silicon substrate, a toroidal soft magnet core, a first solenoid, and a second solenoid; wherein,
  • the ring-shaped soft magnet core is wrapped inside the silicon substrate, and a first spiral channel and a second spiral channel are provided on the silicon substrate, and two opposite sides of the ring-shaped soft magnet core pass through The center of the first spiral tunnel and the center of the second spiral tunnel, the first solenoid and the second solenoid are respectively disposed in the first spiral tunnel and the second spiral tunnel.
  • the silicon substrate is divided into an upper silicon substrate and a lower silicon substrate
  • the ring-shaped soft magnetic core is divided into an upper iron core and a lower iron core
  • the upper iron core and the lower iron core have the same shape
  • the lower surface of the upper silicon substrate is provided with an iron core groove corresponding to the shape of the upper core
  • the upper surface of the lower silicon substrate is provided with an iron core groove corresponding to the shape of the lower core
  • the upper core and the lower core are respectively disposed in corresponding core slots, and the lower surface of the upper silicon substrate and the upper surface of the lower silicon substrate are bonded to each other, so that the upper iron The lower surface of the core and the upper surface of the lower core are aligned with each other.
  • first spiral channel and the second spiral channel respectively include a plurality of first horizontal grooves, a plurality of second horizontal grooves, and a plurality of vertical through holes;
  • the first horizontal trench is provided on the upper surface of the silicon substrate, the second horizontal trench is provided on the lower surface of the silicon substrate, and the vertical through hole penetrates the silicon substrate Surface and lower surface;
  • the head and tail of any of the first horizontal grooves in the first spiral channel and the second spiral channel communicate with two vertical through holes, respectively, and the two vertical through holes communicate with two The adjacent second horizontal grooves are in communication.
  • the four pin grooves are provided on the upper surface of the silicon substrate, two of the four pin grooves are respectively connected to the head and tail of the first spiral channel, and the four pins
  • the other two pin slots in the slot are respectively connected to the head and tail of the second spiral channel, and the four pins are respectively arranged in the four pin slots.
  • the ring-shaped soft magnet core is made of iron-nickel alloy material or iron-cobalt alloy material.
  • first solenoid and the second solenoid are made of metallic copper.
  • the embodiments of the present application provide a method for manufacturing a MEMS toroidal solenoid transformer, including:
  • Step 1 separately fabricate an upper silicon substrate and a lower silicon substrate;
  • Fabricating the upper silicon substrate includes:
  • a plurality of first horizontal grooves are deeply etched on the upper surface, the inner surface and the lower surface of the first silicon wafer after the first oxidation, respectively Slots, upper half of multiple vertical through holes and core slots;
  • Making the lower silicon substrate includes:
  • the core grooves and multiple vertical holes are deeply etched from the silicon on the upper surface, inner and lower surfaces of the second silicon wafer after the first oxidation, respectively The lower half of the through hole and multiple second horizontal grooves;
  • Step 2 Form an upper core and a lower core by electroplating in the core grooves of the upper silicon substrate and the lower silicon substrate respectively;
  • Step 3 After the upper surface of the upper silicon substrate and the lower surface of the lower silicon substrate are oppositely arranged, and the lower surface of the upper core and the upper surface of the lower core are aligned with each other, Bonding the upper silicon substrate and the lower silicon substrate at a low temperature, and forming the first spiral channel and the second spiral channel in the bonded upper silicon substrate and the lower silicon substrate ;
  • Step 4 Electroplating the first spiral channel and the second spiral channel to form a first solenoid and a second solenoid to obtain a MEMS toroidal solenoid transformer.
  • the forming of the upper iron core in the iron core groove of the upper silicon substrate specifically includes:
  • the metal mask plate After registering the metal mask plate with the iron core groove pattern and the iron core groove on the lower surface of the upper silicon substrate, the metal mask plate is closely attached to the lower surface of the upper silicon substrate ;
  • a third preset thickness of iron nickel is electroplated in the iron core groove of the upper silicon substrate Alloy or iron-cobalt alloy to get the upper core; accordingly,
  • the forming of the lower iron core by plating in the iron core groove of the lower silicon substrate specifically includes:
  • the metal mask plate After registering the metal mask plate with the iron core groove pattern and the iron core groove on the upper surface of the lower silicon substrate, the metal mask plate is closely attached to the upper surface of the lower silicon substrate ;
  • the forming of the first solenoid and the second solenoid by electroplating in the first spiral hole and the second spiral hole specifically includes:
  • the manufacturing of the upper silicon substrate further includes:
  • Step S4 also includes:
  • the four pins are formed by electroplating in the four pin slots.
  • an embodiment of the present application provides a MEMS loop solenoid transformer, including: a silicon substrate, a loop-shaped soft magnet core, a first solenoid, and a second solenoid; wherein,
  • the loop-shaped soft magnet core is wrapped inside the silicon substrate, and a first spiral hole channel and a second spiral hole channel are provided on the silicon substrate, and two opposite sides of the loop-shaped soft magnet core respectively pass through Through the center of the first spiral tunnel and the center of the second spiral tunnel, the first solenoid and the second solenoid are respectively disposed in the first spiral tunnel and the second spiral tunnel in.
  • the silicon substrate is divided into an upper silicon substrate and a lower silicon substrate
  • the round soft magnetic core is divided into an upper iron core and a lower iron core, and the shapes of the upper iron core and the lower iron core the same;
  • the lower surface of the upper silicon substrate is provided with an iron core groove corresponding to the shape of the upper core
  • the upper surface of the lower silicon substrate is provided with an iron core groove corresponding to the shape of the lower core
  • the upper core and the lower core are respectively disposed in corresponding core slots, and the lower surface of the upper silicon substrate and the upper surface of the lower silicon substrate are bonded to each other, so that the upper iron The lower surface of the core and the upper surface of the lower core are aligned with each other.
  • first spiral channel and the second spiral channel respectively include a plurality of first horizontal grooves, a plurality of second horizontal grooves, and a plurality of vertical through holes;
  • the first horizontal trench is provided on the upper surface of the silicon substrate, the second horizontal trench is provided on the lower surface of the silicon substrate, and the vertical through hole penetrates the silicon substrate Surface and lower surface;
  • the head and tail of any of the first horizontal grooves in the first spiral channel and the second spiral channel communicate with two vertical through holes, respectively, and the two vertical through holes communicate with two The adjacent second horizontal grooves are in communication.
  • the four pin grooves are provided on the upper surface of the silicon substrate, two of the four pin grooves are respectively connected to the head and tail of the first spiral channel, and the four pins
  • the other two pin slots in the slot are respectively connected to the head and tail of the second spiral channel, and the four pins are respectively arranged in the four pin slots.
  • the soft core of the round shape is made of iron-nickel alloy material or iron-cobalt alloy material.
  • first solenoid and the second solenoid are made of metallic copper.
  • an embodiment of the present application provides a method for manufacturing a MEMS coil solenoid transformer, including:
  • Step 1 separately fabricate an upper silicon substrate and a lower silicon substrate;
  • Fabricating the upper silicon substrate includes:
  • a plurality of parallel first levels are deeply etched on the upper surface, the inner surface and the lower surface of the first silicon wafer after the first oxidation, respectively Groove, upper part of multiple vertical through holes and iron core groove;
  • Making the lower silicon substrate includes:
  • the core grooves and the plurality of vertical holes are deeply etched by the silicon on the upper surface, the inner surface and the lower surface of the second silicon wafer after the first oxidation
  • Step 2 Form an upper core and a lower core by electroplating in the core grooves of the upper silicon substrate and the lower silicon substrate respectively;
  • Step 3 After the upper surface of the upper silicon substrate and the lower surface of the lower silicon substrate are oppositely arranged, and the lower surface of the upper core and the upper surface of the lower core are aligned with each other, Bonding the upper silicon substrate and the lower silicon substrate at a low temperature, and forming the first spiral channel and the second spiral channel in the bonded upper silicon substrate and the lower silicon substrate ;
  • Step 4 Electroplating the first spiral channel and the second spiral channel to form a first solenoid and a second solenoid to obtain a MEMS loop solenoid transformer.
  • the forming of the upper iron core in the iron core groove of the upper silicon substrate specifically includes:
  • the metal mask plate After registering the metal mask plate with the iron core groove pattern and the iron core groove on the lower surface of the upper silicon substrate, the metal mask plate is closely attached to the lower surface of the upper silicon substrate ;
  • a third preset thickness of iron nickel is electroplated in the iron core groove of the upper silicon substrate Alloy or iron-cobalt alloy to get the upper core; accordingly,
  • the forming of the lower iron core by plating in the iron core groove of the lower silicon substrate specifically includes:
  • the metal mask plate After registering the metal mask plate with the iron core groove pattern and the iron core groove on the upper surface of the lower silicon substrate, the metal mask plate is closely attached to the upper surface of the lower silicon substrate ;
  • the forming of the first solenoid and the second solenoid by electroplating in the first spiral hole and the second spiral hole specifically includes:
  • the manufacturing of the upper silicon substrate further includes:
  • Step S4 also includes:
  • the four pins are formed by electroplating in the four pin slots.
  • An embodiment of the present application provides a MEMS toroidal solenoid transformer and a method of manufacturing the same.
  • the toroidal soft magnetic core, the first solenoid, and the second solenoid of the transformer all inside the silicon substrate, it is fully utilized
  • the thickness of the silicon substrate is increased, the resulting transformer has a larger winding cross-sectional area and higher magnetic flux, making the transformer inductance value higher, the transformer operating current larger and the total power greater; meanwhile, the silicon substrate can
  • the core, the first solenoid and the second solenoid play a protective role, improving the strength of the transformer and good impact resistance.
  • An embodiment of the present application provides a MEMS loop solenoid transformer and a method for manufacturing the same.
  • the loop-shaped soft magnetic core of the transformer, the first solenoid, and the second solenoid all inside the silicon substrate, Making full use of the thickness of the silicon substrate, the resulting transformer has a larger winding cross-sectional area and higher magnetic flux, which results in a higher inductance of the transformer; at the same time, the silicon substrate can be used for the soft magnetic core, the first solenoid and The second solenoid plays a protective role, improves the strength of the transformer and has good impact resistance.
  • FIG. 1 is a three-dimensional structural schematic diagram of a MEMS toroidal solenoid transformer provided by an embodiment of the present application
  • FIG. 2 is a schematic diagram of a three-dimensional structure of an upper silicon substrate in an embodiment of the present application
  • FIG. 3 is a schematic diagram of a three-dimensional structure of a lower silicon substrate in an embodiment of the present application.
  • FIG. 4 is a schematic cross-sectional view of steps (1) to (6) of a manufacturing process of a MEMS toroidal solenoid transformer in an example provided by an embodiment of the present application;
  • FIG. 5 is a schematic cross-sectional view of steps (7) to (12) of a manufacturing process of a MEMS toroidal solenoid transformer in an example provided by an embodiment of the present application;
  • FIG. 6 is a schematic cross-sectional view of steps (13) to (17) of a manufacturing process of a MEMS toroidal solenoid transformer in an example provided by an embodiment of the present application;
  • FIG. 7 is a schematic diagram of a three-dimensional structure of a MEMS loop solenoid transformer provided by an embodiment of the present application.
  • FIG. 8 is a schematic diagram of a three-dimensional structure of an upper silicon substrate in an embodiment of the present application.
  • FIG. 9 is a schematic diagram of a three-dimensional structure of a lower silicon substrate in an embodiment of the present application.
  • FIG. 10 is a schematic cross-sectional view of steps (1) to (6) of a manufacturing process of a MEMS loop solenoid transformer in an example provided by an embodiment of the present application;
  • FIG. 11 is a schematic cross-sectional view of steps (7) to (12) of a manufacturing process of a MEMS loop solenoid transformer in an example provided by an embodiment of the present application;
  • FIG. 12 is a schematic cross-sectional view of steps (13) to (17) of a manufacturing process of a MEMS loop solenoid transformer in an example provided by an embodiment of the present application;
  • FIG. 1 is a three-dimensional structural schematic diagram of a MEMS toroidal solenoid transformer provided by an embodiment of the present application. As shown in FIG. 1, it includes: a silicon substrate 1, a toroidal soft magnetic core 2, a first solenoid 3, and a second Solenoid 4; where,
  • the ring-shaped soft magnet core 2 is wrapped inside the silicon substrate 1, as shown in FIGS. 2 and 3, the silicon substrate 1 is provided with a first spiral channel and a second spiral channel, and the ring-shaped soft Two opposite sides of the magnet core 2 pass through the center of the first spiral hole and the center of the second spiral hole, respectively, the first solenoid 3 and the second solenoid 4 are respectively disposed in The first spiral channel and the second spiral channel.
  • both the first spiral channel and the second spiral channel are provided on the silicon substrate 1
  • the first solenoid 3 and the second solenoid 4 respectively provided in the first spiral channel and the second spiral channel are also It is arranged inside the silicon substrate 1, that is, the ring-shaped soft magnet core 2 of the transformer, the first solenoid 3 and the second solenoid 4 are arranged inside the silicon substrate 1.
  • the first solenoid 3 and the first spiral channel have the same shape
  • the second solenoid 4 and the second spiral channel have the same shape
  • the first solenoid 3 and the second solenoid 4 are provided in the first In the spiral hole and the second spiral hole, since the two opposite sides of the annular soft magnet core 2 pass through the center of the first spiral hole and the center of the second spiral hole, the two opposite sides of the annular soft magnet core 2 also Pass through the centers of the first solenoid 3 and the second solenoid 4, respectively.
  • the first solenoid 3 is the primary winding of the transformer
  • the second solenoid 4 is the secondary winding of the transformer
  • the first and second ends of the first solenoid 3 constitute the input end of the transformer
  • the second solenoid The two ends of 4 constitute the output end of the transformer. Understandably, the number of turns of the first solenoid 3 and the second solenoid 4 determines the transformation ratio of the transformer.
  • the MEMS toroidal solenoid transformer provided by the embodiment of the present application fully utilizes the silicon substrate by disposing all the toroidal soft magnetic core, the first solenoid and the second solenoid of the transformer inside the silicon substrate
  • the thickness of the transformer is larger, the cross-sectional area of the obtained transformer is larger, and the magnetic flux is higher, which makes the inductance of the transformer high; at the same time, the silicon substrate can play a role
  • the protective effect improves the strength of the transformer and has good impact resistance.
  • the silicon substrate 1 is divided into an upper silicon substrate 11 and a lower silicon substrate 12, and the ring-shaped soft magnet core 2 is divided into an upper iron core 21 and a lower iron A core 22, and the upper core 21 and the lower core 22 have the same shape;
  • the lower surface of the upper silicon substrate 11 is provided with a core groove corresponding to the shape of the upper core 21, and the upper surface of the lower silicon substrate 12 is provided with a shape corresponding to the shape of the lower core 22 Iron core groove, the upper iron core 21 and the lower iron core 22 are respectively disposed in corresponding iron core grooves, and the lower surface of the upper silicon substrate 11 and the upper surface of the lower silicon substrate 12 are mutually Bonding so that the lower surface of the upper core 21 and the upper surface of the lower core 22 are aligned with each other.
  • the upper iron core 21 and the lower iron core 22 are two iron cores of the same shape, which are formed by the ring-shaped soft magnet core 2 being divided into two in the vertical direction. Half.
  • the upper silicon substrate 11 and the lower silicon substrate 12 are formed by dividing the silicon substrate 1 in the vertical direction, and the two are arranged symmetrically.
  • the ring-shaped soft magnet core is divided into an upper core and a lower core to reduce the eddy current loss in the core To further improve the efficiency of the transformer.
  • the first spiral channel and the second spiral channel respectively include a plurality of first horizontal grooves 31 ', a plurality of second horizontal grooves 32', and Multiple vertical through holes 33 ';
  • the first horizontal trench 31 ' is provided on the upper surface of the silicon substrate 1
  • the second horizontal trench 32' is provided on the lower surface of the silicon substrate 1
  • the vertical through hole 33 ' Through the upper and lower surfaces of the silicon substrate;
  • the head and tail of any of the first horizontal grooves 31 'in the first spiral channel and the second spiral channel communicate with two vertical through holes 33', respectively, and the two vertical through holes 33 'Respectively communicate with two adjacent second horizontal grooves 32'.
  • each vertical through hole 33 ' is also divided into two located on the upper silicon substrate 11 and the lower silicon substrate 12, respectively. Sections.
  • a plurality of first horizontal grooves 31 'and a plurality of second horizontal grooves 32' communicate through a plurality of vertical through holes 33 '.
  • the vertical through holes 33 ' may be linear or arc-shaped, and the first horizontal groove 31' and the second horizontal groove 32 'may also be linear or arc-shaped.
  • the transformer further includes four pins 5 and four pin slots 5 ';
  • the four pin grooves 5 ' are provided on the upper surface of the silicon substrate 1, and the two pin grooves 5' in the four pin grooves 5 "communicate with the head and tail of the first spiral channel respectively ,
  • the other two lead grooves 5 'in the four lead grooves 5' are respectively connected to the head and tail of the second spiral channel, the four pins 5 are respectively disposed in the four lead grooves 5 'in.
  • the other two lead grooves 5 'in the four lead grooves 5' are respectively connected to the first
  • the two spiral holes are connected from beginning to end, so two of the four pins 5 are connected to the first and third solenoids 3 respectively, and the other two of the four pins 5 are connected to the second
  • the solenoid 4 is connected end to end.
  • the annular soft magnetic core 2 is made of iron-nickel alloy material or iron-cobalt alloy material.
  • the first solenoid 3 and the second solenoid 4 are made of metallic copper.
  • Step 1 Fabricating an upper silicon substrate and a lower silicon substrate separately; wherein, fabricating the upper silicon substrate includes: performing a first thermal oxidation on the first silicon wafer of a first preset thickness; according to the first spiral channel and The structure and relative position of the second spiral channel are deeply etched on the upper surface, the inner surface and the lower surface of the first silicon wafer after the first oxidation by a plurality of first horizontal grooves and a plurality of vertical The upper half of the through hole and the core groove; performing a second thermal oxidation on the first silicon wafer obtained by deep etching of silicon to obtain the upper silicon substrate; manufacturing the lower silicon substrate includes: A second silicon wafer with a predetermined thickness is subjected to the first thermal oxidation; according to the structures and relative positions of the first spiral channel and the second spiral channel, respectively, on the upper surface of the second silicon wafer after the first oxidation , The inner and lower surface silicon deeply etched the core groove, the lower half of the plurality of vertical through holes and the plurality of second horizontal trenches
  • Step 2 forming an upper core and a lower core by electroplating in the core grooves of the upper silicon substrate and the lower silicon substrate respectively;
  • Step 3 After the upper surface of the upper silicon substrate and the lower surface of the lower silicon substrate are oppositely arranged, and the lower surface of the upper core and the upper surface of the upper core are aligned with each other, Bonding the upper silicon substrate and the lower silicon substrate at a low temperature, and forming the first spiral channel and the second spiral channel in the bonded upper silicon substrate and the lower silicon substrate ;
  • Step 4 Electroplating the first spiral channel and the second spiral channel to form a first solenoid and a second solenoid to obtain a MEMS toroidal solenoid transformer.
  • step S1 the structural difference between the upper silicon substrate 11 and the lower silicon substrate 12 is essentially only that the upper surface of the upper silicon substrate 11 is provided with a first horizontal trench 31 ', and the lower silicon liner A second horizontal trench 32 'is provided on the lower surface of the bottom 12, and the rest of the structure is the same, and the silicon substrate 11 and the lower silicon substrate 12 are symmetrically arranged, and the processing process before bonding the two is basically the same.
  • step S2 the upper iron core 21 and the lower iron core 22 are plated on the upper silicon substrate 11 and the lower silicon substrate 12, respectively, because the iron core needs to be completely wrapped in the silicon substrate, so the iron core is electroplated
  • step S2 the upper iron core 21 and the lower iron core 22 are plated on the upper silicon substrate 11 and the lower silicon substrate 12, respectively, because the iron core needs to be completely wrapped in the silicon substrate, so the iron core is electroplated
  • One step is completed before bonding the upper silicon substrate 11 and the lower silicon substrate 12.
  • step S3 when bonding the upper silicon substrate 11 and the lower silicon substrate 12, it is necessary to ensure that the lower surface of the upper core 21 and the upper surface of the lower core 22 are aligned with each other to ensure that the magnetic fields of the two are mutually coordination.
  • the horizontal grooves and the vertical through holes provided in the upper silicon substrate 11 and the lower silicon substrate 12 respectively are combined to form the first spiral channel and the The second spiral channel.
  • step S4 after the first spiral channel and the second spiral channel are formed, the first solenoid 3 and the second solenoid 4 can be formed only by plating the relevant metal therein.
  • the first silicon wafer and the second silicon wafer may be double-throw silicon wafers with a thickness of 1000 ⁇ m, and silicon wafers with high resistivity to improve the insulation of the entire transformer and reduce eddy current losses at high frequencies.
  • the first silicon wafer and the second silicon wafer are generally thermally oxidized to form a 2 ⁇ m thick thermal oxide layer.
  • the first silicon wafer and the second silicon wafer are deeply etched to obtain an upper silicon substrate 11 and a lower silicon substrate 12
  • the upper silicon substrate 11 and the lower silicon substrate 12 can be used as bases for making other structures of the transformer.
  • the upper core 21 and the lower core 22 are formed by electroplating at corresponding positions of the upper silicon substrate 11 and the lower silicon substrate 12.
  • the upper core 21 and the lower core 22 are wrapped inside the silicon substrate 1 by bonding, and a complete first spiral channel and the second spiral channel are formed.
  • the first solenoid 3 and the second solenoid 4 are electroplated in the first spiral hole and the second spiral hole to complete the production of the MEMS toroidal solenoid transformer.
  • a method for manufacturing a MEMS toroidal solenoid transformer provided by an embodiment of the present application divides a silicon substrate into two symmetrical parts and manufactures them separately, and then finishes iron core plating before bonding, and forms a spiral after electroplating after bonding
  • the entire manufacturing process does not require deep etching of multiple layers of silicon, which improves the processing error tolerance rate, has good repeatability, and the resulting transformer structure has high accuracy, is compatible with IC semiconductor processes, and is suitable for large-scale production.
  • the upper core 21 is formed by electroplating in the core groove of the upper silicon substrate 11, specifically including:
  • the metal mask plate After registering the metal mask plate with the iron core groove pattern and the iron core groove on the lower surface of the upper silicon substrate 11, the metal mask plate is closely attached to the upper silicon substrate 11 lower surface;
  • the forming of the lower iron core 22 by plating in the iron core groove of the lower silicon substrate 12 specifically includes:
  • the metal mask plate After registering the metal mask plate with the iron core groove pattern with the iron core groove on the upper surface of the lower silicon substrate 12, the metal mask plate is closely attached to the lower silicon substrate 12 Upper surface
  • a third preset thickness is electroplated in the core groove of the lower silicon substrate 12
  • the iron-nickel alloy or iron-cobalt alloy obtains the lower core 22.
  • the corresponding seed layer when the iron core uses iron-nickel alloy, the corresponding seed layer uses metallic nickel; when the iron core uses iron-cobalt alloy, the corresponding seed layer uses metallic cobalt.
  • the thickness of the seed layer which is the second preset thickness, can be determined according to actual process requirements.
  • the thicknesses of the upper core 21 and the lower core 22, that is, the third preset thickness, are determined according to the depth of the core groove.
  • the manufacturing process of the upper iron core 21 and the lower iron core 22 is exactly the same, except that the positions where the two are formed are different, and the two can be processed separately at the same time.
  • the forming of the first solenoid 3 and the second solenoid 4 in the first spiral channel and the second spiral channel specifically includes:
  • the manufacturing of the upper silicon substrate further includes:
  • step S4 also includes:
  • the four pins are formed by electroplating in the four pin slots.
  • 4-6 are schematic cross-sectional views of steps (1) to (17) of a manufacturing process of a MEMS toroidal solenoid transformer in an example provided by an embodiment of the present application, specifically:
  • the upper and lower surfaces of the upper silicon substrate and the lower silicon substrate are exposed with vertical through hole patterns.
  • the upper surface is etched using the oxide layer as a masking layer, and vertical through holes and horizontal grooves on the upper surface are etched.
  • the lower surface is etched using the oxide layer as a masking layer to etch the iron core pattern.
  • the lower surface is magnetron sputtered with 100 nm metallic nickel as a seed layer.
  • the lower surface is magnetron sputtered with 100 nm metallic titanium as an intermediate layer, and then sputtered with 500 nm metallic copper as a seed layer.
  • FIG. 7 is a schematic diagram of a three-dimensional structure of a MEMS loop solenoid transformer provided by an embodiment of the present application. As shown in FIG. 7, it includes: a silicon substrate 1, a loop-shaped soft magnet core 2 ', and a first solenoid 3 And the second solenoid 4; wherein,
  • the loop-shaped soft magnet core 2 ' is wrapped inside the silicon substrate 1, as shown in FIGS. 8 and 9, the silicon substrate 1 is provided with a first spiral hole and a second spiral hole, and the Two opposite sides of the loop-shaped soft magnet core 2 'pass through the center of the first spiral hole and the center of the second spiral hole, respectively, the first solenoid 3 and the second solenoid 4 are respectively arranged in the first spiral channel and the second spiral channel.
  • both the first spiral channel and the second spiral channel are provided on the silicon substrate 1
  • the first solenoid 3 and the second solenoid 4 respectively provided in the first spiral channel and the second spiral channel are also It is provided inside the silicon substrate 1, that is, the transformer-shaped soft magnetic core 2 ′ of the transformer, the first solenoid 3 and the second solenoid 4 are all provided inside the silicon substrate 1.
  • the first solenoid 3 and the first spiral channel have the same shape
  • the second solenoid 4 and the second spiral channel have the same shape
  • the first solenoid 3 and the second solenoid 4 are provided in the first In the spiral channel and the second spiral channel, since two opposite sides of the loop-shaped soft magnet core 2 'pass through the center of the first spiral channel and the center of the second spiral channel, respectively, the two of the loop-shaped soft magnet core 2' The opposite sides also pass through the centers of the first solenoid 3 and the second solenoid 4, respectively.
  • the first solenoid 3 is the primary winding of the transformer
  • the second solenoid 4 is the secondary winding of the transformer
  • the first and second ends of the first solenoid 3 constitute the input end of the transformer
  • the second solenoid The two ends of 4 constitute the output end of the transformer. Understandably, the number of turns of the first solenoid 3 and the second solenoid 4 determines the transformation ratio of the transformer.
  • the MEMS loop solenoid transformer provided by the embodiments of the present application fully utilizes silicon by disposing the loop-shaped soft magnetic core of the transformer, the first solenoid and the second solenoid inside the silicon substrate
  • the thickness of the substrate, the resulting transformer has a larger winding cross-sectional area and higher magnetic flux, making the transformer inductance value higher; at the same time, the silicon substrate can be used for the soft magnetic core, the first solenoid and the second spiral
  • the tube plays a protective role, which improves the strength of the transformer and has good impact resistance.
  • the silicon substrate 1 is divided into an upper silicon substrate 11 and a lower silicon substrate 12, and the loop-shaped soft magnetic core 2 'is divided into an upper iron core 21 and A lower core 22, and the upper core 21 and the lower core 22 have the same shape;
  • the lower surface of the upper silicon substrate 11 is provided with a core groove corresponding to the shape of the upper core 21, and the upper surface of the lower silicon substrate 12 is provided with a shape corresponding to the shape of the lower core 22 Iron core groove, the upper iron core 21 and the lower iron core 22 are respectively disposed in corresponding iron core grooves, and the lower surface of the upper silicon substrate 11 and the upper surface of the lower silicon substrate 12 are mutually Bonding so that the lower surface of the upper core 21 and the upper surface of the lower core 22 are aligned with each other.
  • the upper iron core 21 and the lower iron core 22 are two iron cores of the same shape, which are formed by dividing the soft magnetic core 2 'in the vertical direction, and the shape of the two is also a round shape and the thickness is a round shape Half of soft magnetic core 2 '.
  • the upper silicon substrate 11 and the lower silicon substrate 12 are formed by dividing the silicon substrate 1 in the vertical direction, and the two are arranged symmetrically.
  • the soft magnetic core is divided into two parts: the upper core and the lower core. Eddy current losses further improve the efficiency of the transformer.
  • the first spiral channel and the second spiral channel respectively include a plurality of first horizontal grooves 31 ', a plurality of second horizontal grooves 32', and Multiple vertical through holes 33 ';
  • the first horizontal trench 31 ' is provided on the upper surface of the silicon substrate 1
  • the second horizontal trench 32' is provided on the lower surface of the silicon substrate 1
  • the vertical through hole 33 ' Through the upper and lower surfaces of the silicon substrate;
  • the head and tail of any of the first horizontal grooves 31 'in the first spiral channel and the second spiral channel communicate with two vertical through holes 33', respectively, and the two vertical through holes 33 'Respectively communicate with two adjacent second horizontal grooves 32'.
  • each vertical through hole 33 ' is also divided into two located on the upper silicon substrate 11 and the lower silicon substrate 12, respectively. Sections.
  • a plurality of first horizontal grooves 31 ' are arranged parallel to each other, and a plurality of second horizontal grooves 32' are also arranged parallel to each other, and communicate through a plurality of vertical through holes 33 '.
  • the vertical through hole 33 ' may be linear or arc-shaped, and the first horizontal groove 31' and the second horizontal groove 32 'may also be linear or arc-shaped.
  • the transformer further includes four pins 5 and four pin slots 5 ';
  • the four pin grooves 5 ' are provided on the upper surface of the silicon substrate 1, and the two pin grooves 5' of the four pin grooves 5 'are respectively connected to the head and tail of the first spiral channel ,
  • the other two lead grooves 5 'in the four lead grooves 5' are respectively connected to the head and tail of the second spiral channel, the four pins 5 are respectively disposed in the four lead grooves 5 'in.
  • the other two lead grooves 5 'in the four lead grooves 5' are respectively connected to the first
  • the two spiral holes are connected from beginning to end, so two of the four pins 5 are connected to the first and third solenoids 3 respectively, and the other two of the four pins 5 are connected to the second
  • the solenoid 4 is connected end to end.
  • the round soft magnetic core 2 ' is made of iron-nickel alloy material or iron-cobalt alloy material.
  • the first solenoid 3 and the second solenoid 4 are made of metallic copper.
  • Step 1 Fabricating an upper silicon substrate and a lower silicon substrate separately; wherein, fabricating the upper silicon substrate includes: performing a first thermal oxidation on the first silicon wafer of a first preset thickness; according to the first spiral channel and The structure and relative position of the second spiral channel are deeply etched in parallel on the upper surface, inner surface and lower surface of the first silicon wafer after the first oxidation The upper half of the through hole and the iron core groove; performing a second thermal oxidation on the first silicon wafer obtained by deep etching of silicon to obtain the upper silicon substrate; making the lower silicon substrate includes: The second silicon wafer of the first preset thickness is subjected to the first thermal oxidation; according to the structures and relative positions of the first spiral channel and the second spiral channel, respectively, on the second silicon wafer after the first oxidation The silicon on the surface, the inner and the lower surface deeply etched the core groove, the lower half of the plurality of vertical through holes, and a plurality of parallel second horizontal trenches; the second thermal oxidation of the second silicon wafer
  • Step 2 Form an upper core and a lower core by electroplating in the core grooves of the upper silicon substrate and the lower silicon substrate respectively;
  • Step 3 After the upper surface of the upper silicon substrate and the lower surface of the lower silicon substrate are oppositely arranged, and the lower surface of the upper core and the upper surface of the upper core are aligned with each other, Bonding the upper silicon substrate and the lower silicon substrate at a low temperature, and forming the first spiral channel and the second spiral channel in the bonded upper silicon substrate and the lower silicon substrate ;
  • Step 4 Electroplating the first spiral channel and the second spiral channel to form a first solenoid and a second solenoid to obtain a MEMS loop solenoid transformer.
  • step S1 the structural difference between the upper silicon substrate 11 and the lower silicon substrate 12 is essentially only that the upper surface of the upper silicon substrate 11 is provided with a first horizontal trench 31 ', and the lower silicon liner A second horizontal trench 32 'is provided on the lower surface of the bottom 12, and the rest of the structure is the same, and the silicon substrate 11 and the lower silicon substrate 12 are symmetrically arranged, and the processing process before bonding the two is basically the same.
  • step S2 the upper iron core 21 and the lower iron core 22 are plated on the upper silicon substrate 11 and the lower silicon substrate 12, respectively, because the iron core needs to be completely wrapped in the silicon substrate, so the iron core is electroplated
  • step S2 the upper iron core 21 and the lower iron core 22 are plated on the upper silicon substrate 11 and the lower silicon substrate 12, respectively, because the iron core needs to be completely wrapped in the silicon substrate, so the iron core is electroplated
  • One step is completed before bonding the upper silicon substrate 11 and the lower silicon substrate 12.
  • step S3 when bonding the upper silicon substrate 11 and the lower silicon substrate 12, it is necessary to ensure that the lower surface of the upper core 21 and the upper surface of the lower core 22 are aligned with each other to ensure that the magnetic fields of the two are mutually coordination.
  • the horizontal grooves and the vertical through holes provided in the upper silicon substrate 11 and the lower silicon substrate 12 respectively are combined to form the first spiral channel and the The second spiral channel.
  • step S4 after the first spiral channel and the second spiral channel are formed, the first solenoid 3 and the second solenoid 4 can be formed only by plating the relevant metal therein.
  • the first silicon wafer and the second silicon wafer may be double-throw silicon wafers with a thickness of 1000 ⁇ m, and silicon wafers with high resistivity to improve the insulation of the entire transformer and reduce eddy current losses at high frequencies.
  • the first silicon wafer and the second silicon wafer are generally thermally oxidized to form a 2 ⁇ m thick thermal oxide layer.
  • the first silicon wafer and the second silicon wafer are deeply etched to obtain the upper silicon substrate 11 and the lower silicon lining
  • the bottom 12 is thermally oxidized here, so that the upper silicon substrate 11 and the lower silicon substrate 12 can be used as bases for making other structures of the transformer.
  • the upper core 21 and the lower core 22 are formed by electroplating at corresponding positions of the upper silicon substrate 11 and the lower silicon substrate 12.
  • the upper core 21 and the lower core 22 are wrapped inside the silicon substrate 1 by bonding, and a complete first spiral channel and the second spiral channel are formed.
  • the first solenoid 3 and the second solenoid 4 are electroplated in the first spiral hole and the second spiral hole to complete the manufacture of the MEMS loop solenoid transformer.
  • a method for manufacturing a MEMS loop solenoid transformer provided by an embodiment of the present application divides a silicon substrate into two symmetrical parts and manufactures it separately, and then finishes iron core plating before bonding, and forms a spiral after plating after bonding Line tube, the entire production process does not need to use deep etching of multi-layer silicon, which improves the fault tolerance rate of processing, has good repeatability, and the resulting transformer structure has high accuracy, and is compatible with IC semiconductor technology, suitable for large-scale production .
  • the upper core 21 is formed by electroplating in the core groove of the upper silicon substrate 11, specifically including:
  • the metal mask plate After registering the metal mask plate with the iron core groove pattern and the iron core groove on the lower surface of the upper silicon substrate 11, the metal mask plate is closely attached to the upper silicon substrate 11 lower surface;
  • the forming of the lower iron core 22 by plating in the iron core groove of the lower silicon substrate 12 specifically includes:
  • the metal mask plate After registering the metal mask plate with the iron core groove pattern with the iron core groove on the upper surface of the lower silicon substrate 12, the metal mask plate is closely attached to the lower silicon substrate 12 Upper surface
  • a third preset thickness is electroplated in the core groove of the lower silicon substrate 12
  • the iron-nickel alloy or iron-cobalt alloy obtains the lower core 22.
  • the corresponding seed layer when the iron core uses iron-nickel alloy, the corresponding seed layer uses metallic nickel; when the iron core uses iron-cobalt alloy, the corresponding seed layer uses metallic cobalt.
  • the thickness of the seed layer which is the second preset thickness, can be determined according to actual process requirements.
  • the thicknesses of the upper core 21 and the lower core 22, that is, the third preset thickness, are determined according to the depth of the core groove.
  • the manufacturing process of the upper iron core 21 and the lower iron core 22 is exactly the same, except that the positions where the two are formed are different, and the two can be processed separately at the same time.
  • the forming of the first solenoid 3 and the second solenoid 4 in the first spiral channel and the second spiral channel specifically includes:
  • the manufacturing of the upper silicon substrate further includes:
  • step S4 also includes:
  • the four pins are formed by electroplating in the four pin slots.
  • FIGS. 10-12 are schematic cross-sectional views of steps (1) to (17) of a manufacturing process of a MEMS loop solenoid transformer in an example provided by an embodiment of the present application, specifically:
  • the upper and lower surfaces of the upper silicon substrate and the lower silicon substrate are exposed with vertical through hole patterns.
  • the upper surface is etched using the oxide layer as a masking layer, and vertical through holes and horizontal grooves on the upper surface are etched.
  • the lower surface is etched using the oxide layer as a masking layer to etch the iron core pattern.
  • the lower surface is magnetron sputtered with 100 nm metallic nickel as a seed layer.
  • the lower surface is magnetron sputtered with 100 nm metallic titanium as an intermediate layer, and then sputtered with 500 nm metallic copper as a seed layer.

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Abstract

本申请实施例提供了一种MEMS螺线管变压器，包括：硅衬底、软磁铁芯、第一螺线管及第二螺线管；其中，软磁铁芯包裹在硅衬底内部，硅衬底上设置有第一螺旋孔道和第二螺旋孔道，且软磁铁芯的两个相对的边分别穿过第一螺旋孔道的中心和第二螺旋孔道的中心，第一螺线管及第二螺线管分别设置在第一螺旋孔道和第二螺旋孔道中。通过将变压器的软磁铁芯、第一螺线管及第二螺线管全部设置在硅衬底的内部，充分利用了硅衬底的厚度，得到的变压器的绕组横截面积更大，磁通量更高，使得变压器的电感值高；同时，硅衬底能够对软磁铁芯、第一螺线管及第二螺线管起到保护作用，提高了变压器的强度，抗冲击性能好。

Description

一种MEMS螺线管变压器及其制造方法
相关申请的交叉引用
本申请要求于2018年10月30日提交的申请号为201811278308.7，发明名称为“一种MEMS环形螺线管变压器及其制造方法”以及于2018年10月30日提交的申请号为201811278321.2，发明名称为“一种MEMS回形螺线管变压器及其制造方法”的中国专利申请的优先权，其通过引用方式全部并入本申请。
技术领域
本申请实施例涉及微机电系统(MEMS)技术领域，更具体地，涉及一种MEMS螺线管变压器及其制造方法。
背景技术
微机电系统(Micro-Electro-Mechanical System，MEMS)微型变压器利用电磁感应原理把电能在两个电路之间传递，由磁芯和绕组构成，与常规变压器相比，磁芯尺寸大幅度缩小，绕组形式也有所改变。微型变压器在微型电子设备、信息设备上有广泛应用，可以起到电压变换、电流变换、阻抗变换、隔离、稳压等作用。
目前基于MEMS工艺的微型变压器主要分为两种，平面螺旋式与螺线管式。其中，平面螺旋式变压器的结构随着绕组匝数增多，线圈直径变大，沿铁芯的总磁通量并不能线性增加而是增加量逐渐减小，因此此种结构的匝数一般有限，导致此种变压器的总功率提升有瓶颈。螺线管式变压器克服了绕组匝数的限制，螺线管变压器充分利用了衬底内部垂直空间，获得同样变压器功率时，占用的芯片表面空间更小，有利于变压器微型化的进一步发展。。
但是，目前基于MEMS工艺的微型变压器大都是采用薄膜制造工艺，薄膜制造工艺是一种增材制造方法，故得到的微型变压器的绝大部分结构都是在衬底表面上方，导致变压器强度难以保证，薄膜工艺制作的变压器导线面积较小，不能流过大电流，限制其工作功率的进一步提升；同时采 用薄膜制造工艺能够得到的垂直高度有限，使得变压器的绕组横截面积小，导致变压器的电感值低且磁通量小。
发明内容
本申请实施例提供了一种克服上述问题或者至少部分地解决上述问题的MEMS环形螺线管变压器及其制造方法。
一方面，本申请实施例提供了一种MEMS环形螺线管变压器，包括：硅衬底、环形软磁铁芯、第一螺线管及第二螺线管；其中，
所述环形软磁铁芯包裹在所述硅衬底内部，所述硅衬底上设置有第一螺旋孔道和第二螺旋孔道，且所述环形软磁铁芯的两个相对的边分别穿过所述第一螺旋孔道的中心和所述第二螺旋孔道的中心，所述第一螺线管及所述第二螺线管分别设置在所述第一螺旋孔道和所述第二螺旋孔道中。
进一步地，所述硅衬底分为上硅衬底和下硅衬底，所述环形软磁铁芯分为上铁芯和下铁芯，且所述上铁芯和所述下铁芯形状相同；
所述上硅衬底的下表面设置有与所述上铁芯形状相对应的铁芯槽，所述下硅衬底的上表面设置有与所述下铁芯形状相对应的铁芯槽，所述上铁芯和所述下铁芯分别设置在对应的铁芯槽中，且所述上硅衬底的下表面和所述下硅衬底的上表面相互键合，使得所述上铁芯的下表面和所述下铁芯的上表面相互对准。
进一步地，所述第一螺旋孔道和所述第二螺旋孔道分别包括多条第一水平沟槽、多条第二水平沟槽以及多个竖直通孔；
所述第一水平沟槽设置在所述硅衬底的上表面，所述第二水平沟槽设置在所述硅衬底的下表面，所述竖直通孔贯通所述硅衬底的上表面和下表面；
所述第一螺旋孔道和所述第二螺旋孔道中的任一所述第一水平沟槽的首尾分别与两个竖直通孔连通，且所述两个竖直通孔分别与两个相邻的第二水平沟槽连通。
进一步地，还包括四个引脚和四个引脚槽；
所述四个引脚槽设置在所述硅衬底的上表面，所述四个引脚槽中的两个引脚槽分别与所述第一螺旋孔道的首尾连通，所述四个引脚槽中的另外两个引脚槽分别与所述第二螺旋孔道的首尾连通，所述四个引脚分别设置 在所述四个引脚槽中。
进一步地，所述环形软磁铁芯由铁镍合金材料或铁钴合金材料制作而成。
进一步地，所述第一螺线管和所述第二螺线管由金属铜制作而成。
另一方面，本申请实施例提供了一种MEMS环形螺线管变压器的制造方法，包括：
步骤1，分别制作上硅衬底和下硅衬底；其中，
制作所述上硅衬底包括：
对第一预设厚度的第一硅片进行第一次热氧化；
根据第一螺旋孔道及第二螺旋孔道的结构和相对位置，分别在经第一次氧化后的所述第一硅片的上表面、内部和下表面硅深刻蚀出多条的第一水平沟槽、多个竖直通孔的上半部分以及铁芯槽；
对经硅深刻蚀得到的所述第一硅片进行第二次热氧化，得到所述上硅衬底；
制作所述下硅衬底包括：
对第一预设厚度的第二硅片进行第一次热氧化；
根据第一螺旋孔道及第二螺旋孔道的结构和相对位置，分别在经第一次氧化后的所述第二硅片的上表面、内部和下表面硅深刻蚀出铁芯槽、多个竖直通孔的下半部分及多条的第二水平沟槽；
对所述第二硅片进行第二次热氧化，得到所述下硅衬底；
步骤2，分别在所述上硅衬底和所述下硅衬底的铁芯槽内电镀形成上铁芯和下铁芯；
步骤3，将所述上硅衬底的上表面和所述下硅衬底的下表面相对设置，且使所述上铁芯的下表面和所述下铁芯的上表面相互对准后，将所述上硅衬底和所述下硅衬底低温键合，键合后的所述上硅衬底和所述下硅衬底中形成所述第一螺旋孔道和所述第二螺旋孔道；
步骤4，在所述第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管和第二螺线管，即得到MEMS环形螺线管变压器。
进一步地，所述在所述上硅衬底的铁芯槽内电镀形成上铁芯，具体包括：
将带有铁芯槽图案的金属掩膜版与所述上硅衬底的下表面上的铁芯槽配准后，将所述金属掩膜版紧贴在所述上硅衬底的下表面；
在所述上硅衬底的下表面磁控溅射第二预设厚度金属镍或金属钴作为种子层后，在所述上硅衬底的铁芯槽内电镀第三预设厚度的铁镍合金或铁钴合金即得到上铁芯；相应地，
所述在所述下硅衬底的铁芯槽内电镀形成下铁芯，具体包括：
将带有铁芯槽图案的金属掩膜版与所述下硅衬底的上表面上的铁芯槽配准后，将所述金属掩膜版紧贴在所述下硅衬底的上表面；
在所述下硅衬底的上表面磁控溅射第二预设厚度金属镍或金属钴作为种子层后，在所述下硅衬底的铁芯槽内电镀第三预设厚度的铁镍合金或铁钴合金即得到下铁芯。
进一步地，所述在所述第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管和第二螺线管，具体包括：
在所述下硅衬底的下表面磁控溅射第四预设厚度的金属钛作为中间层，并在所述中间层上磁控溅射第五预设厚度的金属铜作为种子层，再在所述第一螺旋孔道和所述第二螺旋孔道的第二沟槽和竖直通孔内电镀金属铜直至金属铜填充至第一沟槽的下平面的位置；
在所述上硅衬底的上表面磁控溅射金属铜作为种子层后，电镀金属铜直至所述第一螺旋孔道和所述第二螺旋孔道完全被金属铜填满，即得到所述第一螺线管和所述第二螺线管。
进一步地，所述制作所述上硅衬底还包括：
根据四个引脚的结构和位置，在经第一次氧化后的所述第一硅片的上表面硅深刻蚀出四个引脚槽；相应地，
在步骤S4中还包括：
在所述四个引脚槽中电镀形成所述四个引脚。
再一方面，本申请实施例提供了一种MEMS回形螺线管变压器，包括：硅衬底、回形软磁铁芯、第一螺线管及第二螺线管；其中，
所述回形软磁铁芯包裹在所述硅衬底内部，所述硅衬底上设置有第一螺旋孔道和第二螺旋孔道，且所述回形软磁铁芯的两个相对的边分别穿过所述第一螺旋孔道的中心和所述第二螺旋孔道的中心，所述第一螺线管及 所述第二螺线管分别设置在所述第一螺旋孔道和所述第二螺旋孔道中。
进一步地，所述硅衬底分为上硅衬底和下硅衬底，所述回形软磁铁芯分为上铁芯和下铁芯，且所述上铁芯和所述下铁芯形状相同；
所述上硅衬底的下表面设置有与所述上铁芯形状相对应的铁芯槽，所述下硅衬底的上表面设置有与所述下铁芯形状相对应的铁芯槽，所述上铁芯和所述下铁芯分别设置在对应的铁芯槽中，且所述上硅衬底的下表面和所述下硅衬底的上表面相互键合，使得所述上铁芯的下表面和所述下铁芯的上表面相互对准。
进一步地，所述第一螺旋孔道和所述第二螺旋孔道分别包括多条第一水平沟槽、多条第二水平沟槽以及多个竖直通孔；
所述第一水平沟槽设置在所述硅衬底的上表面，所述第二水平沟槽设置在所述硅衬底的下表面，所述竖直通孔贯通所述硅衬底的上表面和下表面；
所述第一螺旋孔道和所述第二螺旋孔道中的任一所述第一水平沟槽的首尾分别与两个竖直通孔连通，且所述两个竖直通孔分别与两个相邻的第二水平沟槽连通。
进一步地，还包括四个引脚和四个引脚槽；
所述四个引脚槽设置在所述硅衬底的上表面，所述四个引脚槽中的两个引脚槽分别与所述第一螺旋孔道的首尾连通，所述四个引脚槽中的另外两个引脚槽分别与所述第二螺旋孔道的首尾连通，所述四个引脚分别设置在所述四个引脚槽中。
进一步地，所述回形软磁铁芯由铁镍合金材料或铁钴合金材料制作而成。
进一步地，所述第一螺线管和所述第二螺线管由金属铜制作而成。
又一方面，本申请实施例提供了一种MEMS回形螺线管变压器的制造方法，包括：
步骤1，分别制作上硅衬底和下硅衬底；其中，
制作所述上硅衬底包括：
对第一预设厚度的第一硅片进行第一次热氧化；
根据第一螺旋孔道及第二螺旋孔道的结构和相对位置，分别在经第一 次氧化后的所述第一硅片的上表面、内部和下表面硅深刻蚀出多条平行的第一水平沟槽、多个竖直通孔的上半部分以及铁芯槽；
对经硅深刻蚀得到的所述第一硅片进行第二次热氧化，得到所述上硅衬底；
制作所述下硅衬底包括：
对第一预设厚度的第二硅片进行第一次热氧化；
根据第一螺旋孔道及第二螺旋孔道的结构和相对位置，分别在经第一次氧化后的所述第二硅片的上表面、内部和下表面硅深刻蚀出铁芯槽、多个竖直通孔的下半部分及多条平行的第二水平沟槽；
对所述第二硅片进行第二次热氧化，得到所述下硅衬底；
步骤2，分别在所述上硅衬底和所述下硅衬底的铁芯槽内电镀形成上铁芯和下铁芯；
步骤3，将所述上硅衬底的上表面和所述下硅衬底的下表面相对设置，且使所述上铁芯的下表面和所述下铁芯的上表面相互对准后，将所述上硅衬底和所述下硅衬底低温键合，键合后的所述上硅衬底和所述下硅衬底中形成所述第一螺旋孔道和所述第二螺旋孔道；
步骤4，在所述第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管和第二螺线管，即得到MEMS回形螺线管变压器。
进一步地，所述在所述上硅衬底的铁芯槽内电镀形成上铁芯，具体包括：
将带有铁芯槽图案的金属掩膜版与所述上硅衬底的下表面上的铁芯槽配准后，将所述金属掩膜版紧贴在所述上硅衬底的下表面；
在所述上硅衬底的下表面磁控溅射第二预设厚度金属镍或金属钴作为种子层后，在所述上硅衬底的铁芯槽内电镀第三预设厚度的铁镍合金或铁钴合金即得到上铁芯；相应地，
所述在所述下硅衬底的铁芯槽内电镀形成下铁芯，具体包括：
将带有铁芯槽图案的金属掩膜版与所述下硅衬底的上表面上的铁芯槽配准后，将所述金属掩膜版紧贴在所述下硅衬底的上表面；
在所述下硅衬底的上表面磁控溅射第二预设厚度金属镍或金属钴作为种子层后，在所述下硅衬底的铁芯槽内电镀第三预设厚度的铁镍合金或 铁钴合金即得到下铁芯。
进一步地，所述在所述第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管和第二螺线管，具体包括：
在所述下硅衬底的下表面磁控溅射第四预设厚度的金属钛作为中间层，并在所述中间层上磁控溅射第五预设厚度的金属铜作为种子层，再在所述第一螺旋孔道和所述第二螺旋孔道的第二沟槽和竖直通孔内电镀金属铜直至金属铜填充至第一沟槽的下平面的位置；
在所述上硅衬底的上表面磁控溅射金属铜作为种子层后，电镀金属铜直至所述第一螺旋孔道和所述第二螺旋孔道完全被金属铜填满，即得到所述第一螺线管和所述第二螺线管。
进一步地，所述制作所述上硅衬底还包括：
根据四个引脚的结构和位置，在经第一次氧化后的所述第一硅片的上表面硅深刻蚀出四个引脚槽；相应地，
在步骤S4中还包括：
在所述四个引脚槽中电镀形成所述四个引脚。本申请实施例提供的一种MEMS环形螺线管变压器及其制造方法，通过将变压器的环形软磁铁芯、第一螺线管及第二螺线管全部设置在硅衬底的内部，充分利用了硅衬底的厚度，得到的变压器的绕组横截面积更大，磁通量更高，使得变压器的电感值高，变压器工作电流更大，总功率更大；同时，硅衬底能够对环形软磁铁芯、第一螺线管及第二螺线管起到保护作用，提高了变压器的强度，抗冲击性能好。
本申请实施例提供的一种MEMS回形螺线管变压器及其制造方法，通过将变压器的回形软磁铁芯、第一螺线管及第二螺线管全部设置在硅衬底的内部，充分利用了硅衬底的厚度，得到的变压器的绕组横截面积更大，磁通量更高，使得变压器的电感值高；同时，硅衬底能够对回形软磁铁芯、第一螺线管及第二螺线管起到保护作用，提高了变压器的强度，抗冲击性能好。
附图说明
为了更清楚地说明本申请实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作一简单地介绍，显而易见地， 下面描述中的附图是本申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请实施例提供的一种MEMS环形螺线管变压器的立体结构示意图；
图2为本申请实施例中上硅衬底的立体结构示意图；
图3为本申请实施例中下硅衬底的立体结构示意图；
图4为本申请实施例提供的实例中一种MEMS环形螺线管变压器的制造过程的步骤(1)至(6)的截面示意图；
图5为本申请实施例提供的实例中一种MEMS环形螺线管变压器的制造过程的步骤(7)至(12)的截面示意图；
图6为本申请实施例提供的实例中一种MEMS环形螺线管变压器的制造过程的步骤(13)至(17)的截面示意图；
图7为本申请实施例提供的一种MEMS回形螺线管变压器的立体结构示意图；
图8为本申请实施例中上硅衬底的立体结构示意图；
图9为本申请实施例中下硅衬底的立体结构示意图；
图10为本申请实施例提供的实例中一种MEMS回形螺线管变压器的制造过程的步骤(1)至(6)的截面示意图；
图11为本申请实施例提供的实例中一种MEMS回形螺线管变压器的制造过程的步骤(7)至(12)的截面示意图；
图12为本申请实施例提供的实例中一种MEMS回形螺线管变压器的制造过程的步骤(13)至(17)的截面示意图；
附图标记：
1-硅衬底；                           2-环形软磁铁芯；
2’-回形软磁铁芯                     3-第一螺线管；
4-第二螺线管；                       5-引脚；
5’-引脚槽；                         11-上硅衬底；
12-下硅衬底；                        21-上铁芯；
22-下铁芯；                          31’-第一水平沟槽；
32’-第二水平沟槽；                  33’-竖直通孔。
具体实施方式
为使本申请实施例的目的、技术方案和优点更加清楚，下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚地描述，显然，所描述的实施例是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
图1为本申请实施例提供的一种MEMS环形螺线管变压器的立体结构示意图，如图1所示，包括：硅衬底1、环形软磁铁芯2、第一螺线管3及第二螺线管4；其中，
所述环形软磁铁芯2包裹在所述硅衬底1内部，如图2和图3所示，所述硅衬底1上设置有第一螺旋孔道和第二螺旋孔道，且所述环形软磁铁芯2的两个相对的边分别穿过所述第一螺旋孔道的中心和所述第二螺旋孔道的中心，所述第一螺线管3及所述第二螺线管4分别设置在所述第一螺旋孔道和所述第二螺旋孔道中。
其中，由于第一螺旋孔道和第二螺旋孔道都设置在硅衬底1上，所以分别设置在第一螺旋孔道和第二螺旋孔道中的第一螺线管3及第二螺线管4也是设置在硅衬底1的内部，即变压器的环形软磁铁芯2、第一螺线管3及第二螺线管4都设置在硅衬底1的内部。
具体地，第一螺线管3和第一螺旋孔道形状相同，第二螺线管4和第二螺旋孔道形状相同，且第一螺线管3及第二螺线管4分别设置在第一螺旋孔道和第二螺旋孔道中，由于环形软磁铁芯2的两个相对的边分别穿过第一螺旋孔道的中心和第二螺旋孔道的中心，环形软磁铁芯2的两个相对的边也分别穿过第一螺线管3及第二螺线管4的中心。变压器工作时，第一螺线管3为变压器的初级绕组，第二螺线管4为变压器的次级绕组，第一螺线管3的首尾两端构成变压器的输入端，第二螺线管4的首尾两端构成变压器的输出端。可以理解地，第一螺线管3和第二螺线管4的匝数决定变压器的变压比。
本申请实施例提供的一种MEMS环形螺线管变压器，通过将变压器的环形软磁铁芯、第一螺线管及第二螺线管全部设置在硅衬底的内部，充分利用了硅衬底的厚度，得到的变压器的绕组横截面积更大，磁通量更高， 使得变压器的电感值高；同时，硅衬底能够对环形软磁铁芯、第一螺线管及第二螺线管起到保护作用，提高了变压器的强度，抗冲击性能好。
在上述实施例中，如图1-3所示，所述硅衬底1分为上硅衬底11和下硅衬底12，所述环形软磁铁芯2分为上铁芯21和下铁芯22，且所述上铁芯21和所述下铁芯22形状相同；
所述上硅衬底11的下表面设置有与所述上铁芯21形状相对应的铁芯槽，所述下硅衬底12的上表面设置有与所述下铁芯22形状相对应的铁芯槽，所述上铁芯21和所述下铁芯22分别设置在对应的铁芯槽中，且所述上硅衬底11的下表面和所述下硅衬底12的上表面相互键合，使得所述上铁芯21的下表面和所述下铁芯22的上表面相互对准。
其中，上铁芯21和下铁芯22为形状相同的两块铁芯，是由环形软磁铁芯2在竖直方向平分而成，两者的形状也是环形，而厚度为环形软磁铁芯2的一半。同理，上硅衬底11和下硅衬底12是由硅衬底1在竖直方向平分而成，两者对称设置。
通过将硅衬底和环形软磁铁芯分别平分了两个部分，使得变压器整体便于加工的同时，将环形软磁铁芯分为上铁芯和下铁芯两个部分可以减少铁芯内的涡流损耗，进一步提高变压器的效率。
在上述实施例中，如图2和图3所示，所述第一螺旋孔道和所述第二螺旋孔道分别包括多条第一水平沟槽31’、多条第二水平沟槽32’以及多个竖直通孔33’；
所述第一水平沟槽31’设置在所述硅衬底1的上表面，所述第二水平沟槽32’设置在所述硅衬底1的下表面，所述竖直通孔33’贯通所述硅衬底的上表面和下表面；
所述第一螺旋孔道和所述第二螺旋孔道中的任一所述第一水平沟槽31’的首尾分别与两个竖直通孔33’连通，且所述两个竖直通孔33’分别与两个相邻的第二水平沟槽32’连通。
其中，当硅衬底1被分为上硅衬底11和下硅衬底12时，每个竖直通孔33’也被分为分别位于上硅衬底11和下硅衬底12的两个部分。
具体地，在一个螺旋孔道中，多个第一水平沟槽31’和多个第二水平沟槽32’通过多个竖直通孔33’连通。可以理解的，竖直通孔33’可以是直 线形或弧形，第一水平沟槽31’和第二水平沟槽32’也可以是直线形或弧形。
在上述实施例中，如图1所示，变压器还包括四个引脚5和四个引脚槽5’；
所述四个引脚槽5’设置在所述硅衬底1的上表面，所述四个引脚槽5”中的两个引脚槽5’分别与所述第一螺旋孔道的首尾连通，所述四个引脚槽5’中的另外两个引脚槽5’分别与所述第二螺旋孔道的首尾连通，所述四个引脚5分别设置在所述四个引脚槽5’中。
具体地，由于四个引脚槽5’中的两个引脚槽5’分别与第一螺旋孔道的首尾连通，四个引脚槽5’中的另外两个引脚槽5’分别与第二螺旋孔道的首尾连通，所以，四个引脚5中的两个引脚5分别与第一螺线管3的首尾连接，四个引脚5中的另外两个引脚5分别与第二螺线管4的首尾连接。在变压器工作时，四个引脚5中的两个引脚5构成变压器的输入端，四个引脚5中的另外两个引脚5构成变压器的输出端。
在上述实施例中，所述环形软磁铁芯2由铁镍合金材料或铁钴合金材料制作而成。
在上述实施例中，所述第一螺线管3和所述第二螺线管4由金属铜制作而成。
本申请实施例提供的一种MEMS环形螺线管变压器的制造方法，包括：
步骤1，分别制作上硅衬底和下硅衬底；其中，制作所述上硅衬底包括：对第一预设厚度的第一硅片进行第一次热氧化；根据第一螺旋孔道及第二螺旋孔道的结构和相对位置，分别在经第一次氧化后的所述第一硅片的上表面、内部和下表面硅深刻蚀出多条的第一水平沟槽、多个竖直通孔的上半部分以及铁芯槽；对经硅深刻蚀得到的所述第一硅片进行第二次热氧化，得到所述上硅衬底；制作所述下硅衬底包括：对第一预设厚度的第二硅片进行第一次热氧化；根据第一螺旋孔道及第二螺旋孔道的结构和相对位置，分别在经第一次氧化后的所述第二硅片的上表面、内部和下表面硅深刻蚀出铁芯槽、多个竖直通孔的下半部分及多条的第二水平沟槽；对所述第二硅片进行第二次热氧化，得到所述下硅衬底；
步骤2，分别在所述上硅衬底和所述下硅衬底的铁芯槽内电镀形成上 铁芯和下铁芯；
步骤3，将所述上硅衬底的上表面和所述下硅衬底的下表面相对设置，且使所述上铁芯的下表面和所述上铁芯的上表面相互对准后，将所述上硅衬底和所述下硅衬底低温键合，键合后的所述上硅衬底和所述下硅衬底中形成所述第一螺旋孔道和所述第二螺旋孔道；
步骤4，在所述第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管和第二螺线管，即得到MEMS环形螺线管变压器。
其中，在步骤S1中，上硅衬底11和下硅衬底12之间结构上的差异实质上仅仅在于，上硅衬底11上表面设置的是第一水平沟槽31’，下硅衬底12下表面设置的是第二水平沟槽32’，其余部分的结构均相同，且硅衬底11和下硅衬底12对称设置，在两者键合之前的加工过程基本一致。
在步骤S2中，在上硅衬底11和下硅衬底12上分别电镀形成上铁芯21和下铁芯22，因为需要将铁芯完全包裹在硅衬底之内，故铁芯电镀这一步骤在键合上硅衬底11和下硅衬底12之前完成。
在步骤S3中，键合上硅衬底11和下硅衬底12时，需要保证且使上铁芯21的下表面和下铁芯22的上表面相互对准，以保证两者的磁场相互协调。同时，上硅衬底11和下硅衬底12键合后，之前分别设置在上硅衬底11和下硅衬底12的水平沟槽和竖直通孔组合形成第一螺旋孔道和所述第二螺旋孔道。
在步骤S4中，第一螺旋孔道和所述第二螺旋孔道形成后，只需要在其中电镀相关金属，即可形成第一螺线管3和第二螺线管4。
具体地，第一硅片和第二硅片可采用1000μm厚的双抛硅片，并采用高电阻率的硅片，以提高变压器整体的绝缘性，减少高频下的涡流损失。对第一硅片和第二硅片进行热氧化一般形成2μm厚的热氧化层即可。根据环形软磁铁芯2、第一螺旋孔道3及第二螺旋孔道4的结构和相对位置，对第一硅片和第二硅片进行硅深刻蚀得到上硅衬底11和下硅衬底12并在此进行热氧化处理，即可将上硅衬底11和下硅衬底12作为基底用于制作变压器的其他结构。接下来，在上硅衬底11和下硅衬底12的相应位置利用电镀形成上铁芯21和下铁芯22。通过键合将上铁芯21和下铁芯22包裹在硅衬底1的内部，并形成完整的第一螺旋孔道和所述第二螺旋孔道。 在第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管3和第二螺线管4，即完成了MEMS环形螺线管变压器的制作。
本申请实施例提供的一种MEMS环形螺线管变压器的制造方法，将硅衬底分为两个对称的部分单独进行制作，并再键合前完成铁芯电镀，键合后电镀形成螺线管，整个制作过程无需采用多层硅深刻蚀，提高了加工的容错率，具有很好的可重复性，得到的变压器结构准确度高，且能够与IC半导体工艺兼容，适用于大规模生产。
在上述实施例中，所述在所述上硅衬底11的铁芯槽内电镀形成上铁芯21，具体包括：
将带有铁芯槽图案的金属掩膜版与所述上硅衬底11的下表面上的铁芯槽配准后，将所述金属掩膜版紧贴在所述上硅衬底11的下表面；
在所述上硅衬底11的下表面磁控溅射第二预设厚度金属镍或金属钴作为种子层后，在所述上硅衬底11的铁芯槽内电镀第三预设厚度的铁镍合金或铁钴合金即得到上铁芯21。
相应地，所述在所述下硅衬底12的铁芯槽内电镀形成下铁芯22，具体包括：
将带有铁芯槽图案的金属掩膜版与所述下硅衬底12的上表面上的铁芯槽配准后，将所述金属掩膜版紧贴在所述下硅衬底12的上表面；
在所述下硅衬底12的上表面磁控溅射第二预设厚度金属镍或金属钴作为种子层后，在所述下硅衬底12的铁芯槽内电镀第三预设厚度的铁镍合金或铁钴合金即得到下铁芯22。
其中，当铁芯采用铁镍合金时，对应的种子层采用金属镍；当铁芯采用铁钴合金时，对应的种子层采用金属钴。种子层的厚度即第二预设厚度，可以根据实际的工艺需求进行确定。上铁芯21和下铁芯22的厚度即第三预设厚度，根据铁芯槽的深度确定。
具体地，上铁芯21和下铁芯22的制作过程所采用的工艺完全相同，只是两者形成的位置不同，两者可以同时单独加工制作。
在上述实施例中，所述在所述第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管3和第二螺线管4，具体包括：
在所述下硅衬底的下表面磁控溅射第四预设厚度的金属钛作为中间 层，并在所述中间层上磁控溅射第五预设厚度的金属铜作为种子层，再在所述第一螺旋孔道和所述第二螺旋孔道的第二沟槽和竖直通孔内电镀金属铜直至金属铜填充至第一沟槽的下平面的位置；
在所述上硅衬底的上表面磁控溅射金属铜作为种子层后，电镀金属铜直至所述第一螺旋孔道和所述第二螺旋孔道完全被金属铜填满，即得到所述第一螺线管和所述第二螺线管。
在上述实施例中，所述制作所述上硅衬底还包括：
根据四个引脚的结构和位置，在经第一次氧化后的所述第一硅片的上表面硅深刻蚀出四个引脚槽；
相应地，在步骤S4中还包括：
在所述四个引脚槽中电镀形成所述四个引脚。
下面通过一个实例对MEMS环形螺线管变压器的制造方法进一步进行说明，需要说明的是，以下仅仅是本申请实施例的一个实例，本申请实施例并不以此为限。
图4-6为本申请实施例提供的实例中一种MEMS环形螺线管变压器的制造过程的步骤(1)至(17)的截面示意图，具体为：
(1)采用1000μm厚双抛硅片。采用高电阻率硅片以提高整体结构绝缘性，减少高频下涡流损失。硅片热氧化，生成双面2μm厚热氧化层。
(2)涂覆光刻胶，上硅衬底上表面曝光第一水平沟槽(覆盖竖直通孔位置)、触点图案，下硅衬底上表面曝光竖直通孔和第二水平沟槽，上硅衬底和下硅衬底的下表面分别曝光铁芯槽图案，第一水平沟槽、第二水平沟槽及竖直通孔构成螺旋孔道。
(3)使用BOE(Buffered Oxide Etch)溶液去除暴露位置的二氧化硅，使二氧化硅图形化。
(4)第二次涂胶，上硅衬底和下硅衬底的上下表面曝光竖直通孔图案。
(5)硅深刻蚀上下表面，刻蚀硅通孔图案至一定深度。
(6)使用piranha溶液，去除光刻胶。
(7)以氧化层作为掩蔽层进行上表面刻蚀，刻蚀出竖直通孔与上表面水平沟槽。以氧化层作为掩蔽层进行下表面刻蚀，刻蚀出铁芯图案。
(8)热氧化，形成2μm厚氧化层。
(9)取带有铁芯槽图案的金属掩膜版，将其上铁芯槽图案与一二号硅片下表面的铁芯槽图案对准，紧贴在硅片下表面上。
(10)下表面磁控溅射100nm金属镍作为种子层。
(11)电镀铁镍合金，使铁镍合金从底部填充到距硅片表面100um。
(12)将上硅衬底和下硅衬底的下表面相对，进行低温硅硅键合。
(13)下表面磁控溅射100nm金属钛为中间层，随后溅射500nm金属铜作为种子层。
(14)电镀金属铜，使电镀铜从底部填充到顶部水平导线下平面位置。
(15)上表面磁控溅射500nm金属铜。
(16)电镀金属铜，使得上表面全部结构被电镀铜完全覆盖。
(17)使用CMP(化学机械抛光机)进行上下表面金属铜减薄，直到金属铜减薄至于硅片热氧化层表面相同高度停止，随后CMP抛光表面，完成MEMS微型变压器的制作。
图7为本申请实施例提供的一种MEMS回形螺线管变压器的立体结构示意图，如图7所示，包括：硅衬底1、回形软磁铁芯2’、第一螺线管3及第二螺线管4；其中，
所述回形软磁铁芯2’包裹在所述硅衬底1内部，如图8和图9所示，所述硅衬底1上设置有第一螺旋孔道和第二螺旋孔道，且所述回形软磁铁芯2’的两个相对的边分别穿过所述第一螺旋孔道的中心和所述第二螺旋孔道的中心，所述第一螺线管3及所述第二螺线管4分别设置在所述第一螺旋孔道和所述第二螺旋孔道中。
其中，由于第一螺旋孔道和第二螺旋孔道都设置在硅衬底1上，所以分别设置在第一螺旋孔道和第二螺旋孔道中的第一螺线管3及第二螺线管4也是设置在硅衬底1的内部，即变压器的回形软磁铁芯2’、第一螺线管3及第二螺线管4都设置在硅衬底1的内部。
具体地，第一螺线管3和第一螺旋孔道形状相同，第二螺线管4和第二螺旋孔道形状相同，且第一螺线管3及第二螺线管4分别设置在第一螺旋孔道和第二螺旋孔道中，由于回形软磁铁芯2’的两个相对的边分别穿过第一螺旋孔道的中心和第二螺旋孔道的中心，回形软磁铁芯2’的两个相对 的边也分别穿过第一螺线管3及第二螺线管4的中心。变压器工作时，第一螺线管3为变压器的初级绕组，第二螺线管4为变压器的次级绕组，第一螺线管3的首尾两端构成变压器的输入端，第二螺线管4的首尾两端构成变压器的输出端。可以理解地，第一螺线管3和第二螺线管4的匝数决定变压器的变压比。
本申请实施例提供的一种MEMS回形螺线管变压器，通过将变压器的回形软磁铁芯、第一螺线管及第二螺线管全部设置在硅衬底的内部，充分利用了硅衬底的厚度，得到的变压器的绕组横截面积更大，磁通量更高，使得变压器的电感值高；同时，硅衬底能够对回形软磁铁芯、第一螺线管及第二螺线管起到保护作用，提高了变压器的强度，抗冲击性能好。
在上述实施例中，如图7-9所示，所述硅衬底1分为上硅衬底11和下硅衬底12，所述回形软磁铁芯2’分为上铁芯21和下铁芯22，且所述上铁芯21和所述下铁芯22形状相同；
所述上硅衬底11的下表面设置有与所述上铁芯21形状相对应的铁芯槽，所述下硅衬底12的上表面设置有与所述下铁芯22形状相对应的铁芯槽，所述上铁芯21和所述下铁芯22分别设置在对应的铁芯槽中，且所述上硅衬底11的下表面和所述下硅衬底12的上表面相互键合，使得所述上铁芯21的下表面和所述下铁芯22的上表面相互对准。
其中，上铁芯21和下铁芯22为形状相同的两块铁芯，是由回形软磁铁芯2’在竖直方向平分而成，两者的形状也是回形，而厚度为回形软磁铁芯2’的一半。同理，上硅衬底11和下硅衬底12是由硅衬底1在竖直方向平分而成，两者对称设置。
通过将硅衬底和回形软磁铁芯分别平分了两个部分，使得变压器整体便于加工的同时，将回形软磁铁芯分为上铁芯和下铁芯两个部分可以减少铁芯内的涡流损耗，进一步提高变压器的效率。
在上述实施例中，如图8和图9所示，所述第一螺旋孔道和所述第二螺旋孔道分别包括多条第一水平沟槽31’、多条第二水平沟槽32’以及多个竖直通孔33’；
所述第一水平沟槽31’设置在所述硅衬底1的上表面，所述第二水平沟槽32’设置在所述硅衬底1的下表面，所述竖直通孔33’贯通所述硅衬底 的上表面和下表面；
所述第一螺旋孔道和所述第二螺旋孔道中的任一所述第一水平沟槽31’的首尾分别与两个竖直通孔33’连通，且所述两个竖直通孔33’分别与两个相邻的第二水平沟槽32’连通。
其中，当硅衬底1被分为上硅衬底11和下硅衬底12时，每个竖直通孔33’也被分为分别位于上硅衬底11和下硅衬底12的两个部分。
具体地，在一个螺旋孔道中，多个第一水平沟槽31’相互平行设置，多个第二水平沟槽32’也相互平行设置，且通过多个竖直通孔33’连通。可以理解的，竖直通孔33’可以是直线形或弧形，第一水平沟槽31’和第二水平沟槽32’也可以是直线形或弧形。
在上述实施例中，如图1所示，变压器还包括四个引脚5和四个引脚槽5’；
所述四个引脚槽5’设置在所述硅衬底1的上表面，所述四个引脚槽5’中的两个引脚槽5’分别与所述第一螺旋孔道的首尾连通，所述四个引脚槽5’中的另外两个引脚槽5’分别与所述第二螺旋孔道的首尾连通，所述四个引脚5分别设置在所述四个引脚槽5’中。
具体地，由于四个引脚槽5’中的两个引脚槽5’分别与第一螺旋孔道的首尾连通，四个引脚槽5’中的另外两个引脚槽5’分别与第二螺旋孔道的首尾连通，所以，四个引脚5中的两个引脚5分别与第一螺线管3的首尾连接，四个引脚5中的另外两个引脚5分别与第二螺线管4的首尾连接。在变压器工作时，四个引脚5中的两个引脚5构成变压器的输入端，四个引脚5中的另外两个引脚5构成变压器的输出端。
在上述实施例中，所述回形软磁铁芯2’由铁镍合金材料或铁钴合金材料制作而成。
在上述实施例中，所述第一螺线管3和所述第二螺线管4由金属铜制作而成。
本申请实施例提供的一种MEMS回形螺线管变压器的制造方法，包括：
步骤1，分别制作上硅衬底和下硅衬底；其中，制作所述上硅衬底包括：对第一预设厚度的第一硅片进行第一次热氧化；根据第一螺旋孔道及 第二螺旋孔道的结构和相对位置，分别在经第一次氧化后的所述第一硅片的上表面、内部和下表面硅深刻蚀出多条平行的第一水平沟槽、多个竖直通孔的上半部分以及铁芯槽；对经硅深刻蚀得到的所述第一硅片进行第二次热氧化，得到所述上硅衬底；制作所述下硅衬底包括：对第一预设厚度的第二硅片进行第一次热氧化；根据第一螺旋孔道及第二螺旋孔道的结构和相对位置，分别在经第一次氧化后的所述第二硅片的上表面、内部和下表面硅深刻蚀出铁芯槽、多个竖直通孔的下半部分及多条平行的第二水平沟槽；对所述第二硅片进行第二次热氧化，得到所述下硅衬底；
步骤2，分别在所述上硅衬底和所述下硅衬底的铁芯槽内电镀形成上铁芯和下铁芯；
步骤3，将所述上硅衬底的上表面和所述下硅衬底的下表面相对设置，且使所述上铁芯的下表面和所述上铁芯的上表面相互对准后，将所述上硅衬底和所述下硅衬底低温键合，键合后的所述上硅衬底和所述下硅衬底中形成所述第一螺旋孔道和所述第二螺旋孔道；
步骤4，在所述第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管和第二螺线管，即得到MEMS回形螺线管变压器。
其中，在步骤S1中，上硅衬底11和下硅衬底12之间结构上的差异实质上仅仅在于，上硅衬底11上表面设置的是第一水平沟槽31’，下硅衬底12下表面设置的是第二水平沟槽32’，其余部分的结构均相同，且硅衬底11和下硅衬底12对称设置，在两者键合之前的加工过程基本一致。
在步骤S2中，在上硅衬底11和下硅衬底12上分别电镀形成上铁芯21和下铁芯22，因为需要将铁芯完全包裹在硅衬底之内，故铁芯电镀这一步骤在键合上硅衬底11和下硅衬底12之前完成。
在步骤S3中，键合上硅衬底11和下硅衬底12时，需要保证且使上铁芯21的下表面和下铁芯22的上表面相互对准，以保证两者的磁场相互协调。同时，上硅衬底11和下硅衬底12键合后，之前分别设置在上硅衬底11和下硅衬底12的水平沟槽和竖直通孔组合形成第一螺旋孔道和所述第二螺旋孔道。
在步骤S4中，第一螺旋孔道和所述第二螺旋孔道形成后，只需要在其中电镀相关金属，即可形成第一螺线管3和第二螺线管4。
具体地，第一硅片和第二硅片可采用1000μm厚的双抛硅片，并采用高电阻率的硅片，以提高变压器整体的绝缘性，减少高频下的涡流损失。对第一硅片和第二硅片进行热氧化一般形成2μm厚的热氧化层即可。根据回形软磁铁芯2’、第一螺旋孔道3及第二螺旋孔道4的结构和相对位置，对第一硅片和第二硅片进行硅深刻蚀得到上硅衬底11和下硅衬底12并在此进行热氧化处理，即可将上硅衬底11和下硅衬底12作为基底用于制作变压器的其他结构。接下来，在上硅衬底11和下硅衬底12的相应位置利用电镀形成上铁芯21和下铁芯22。通过键合将上铁芯21和下铁芯22包裹在硅衬底1的内部，并形成完整的第一螺旋孔道和所述第二螺旋孔道。在第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管3和第二螺线管4，即完成了MEMS回形螺线管变压器的制作。
本申请实施例提供的一种MEMS回形螺线管变压器的制造方法，将硅衬底分为两个对称的部分单独进行制作，并再键合前完成铁芯电镀，键合后电镀形成螺线管，整个制作过程无需采用多层硅深刻蚀，提高了加工的容错率，具有很好的可重复性，得到的变压器结构准确度高，且能够与IC半导体工艺兼容，适用于大规模生产。
在上述实施例中，所述在所述上硅衬底11的铁芯槽内电镀形成上铁芯21，具体包括：
将带有铁芯槽图案的金属掩膜版与所述上硅衬底11的下表面上的铁芯槽配准后，将所述金属掩膜版紧贴在所述上硅衬底11的下表面；
在所述上硅衬底11的下表面磁控溅射第二预设厚度金属镍或金属钴作为种子层后，在所述上硅衬底11的铁芯槽内电镀第三预设厚度的铁镍合金或铁钴合金即得到上铁芯21。
相应地，所述在所述下硅衬底12的铁芯槽内电镀形成下铁芯22，具体包括：
将带有铁芯槽图案的金属掩膜版与所述下硅衬底12的上表面上的铁芯槽配准后，将所述金属掩膜版紧贴在所述下硅衬底12的上表面；
在所述下硅衬底12的上表面磁控溅射第二预设厚度金属镍或金属钴作为种子层后，在所述下硅衬底12的铁芯槽内电镀第三预设厚度的铁镍合金或铁钴合金即得到下铁芯22。
其中，当铁芯采用铁镍合金时，对应的种子层采用金属镍；当铁芯采用铁钴合金时，对应的种子层采用金属钴。种子层的厚度即第二预设厚度，可以根据实际的工艺需求进行确定。上铁芯21和下铁芯22的厚度即第三预设厚度，根据铁芯槽的深度确定。
具体地，上铁芯21和下铁芯22的制作过程所采用的工艺完全相同，只是两者形成的位置不同，两者可以同时单独加工制作。
在上述实施例中，所述在所述第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管3和第二螺线管4，具体包括：
在所述下硅衬底的下表面磁控溅射第四预设厚度的金属钛作为中间层，并在所述中间层上磁控溅射第五预设厚度的金属铜作为种子层，再在所述第一螺旋孔道和所述第二螺旋孔道的第二沟槽和竖直通孔内电镀金属铜直至金属铜填充至第一沟槽的下平面的位置；
在所述上硅衬底的上表面磁控溅射金属铜作为种子层后，电镀金属铜直至所述第一螺旋孔道和所述第二螺旋孔道完全被金属铜填满，即得到所述第一螺线管和所述第二螺线管。
在上述实施例中，所述制作所述上硅衬底还包括：
根据四个引脚的结构和位置，在经第一次氧化后的所述第一硅片的上表面硅深刻蚀出四个引脚槽；
相应地，在步骤S4中还包括：
在所述四个引脚槽中电镀形成所述四个引脚。
下面通过一个实例对MEMS回形螺线管变压器的制造方法进一步进行说明，需要说明的是，以下仅仅是本申请实施例的一个实例，本申请实施例并不以此为限。
图10-12为本申请实施例提供的实例中一种MEMS回形螺线管变压器的制造过程的步骤(1)至(17)的截面示意图，具体为：
(1)采用1000μm厚双抛硅片。采用高电阻率硅片以提高整体结构绝缘性，减少高频下涡流损失。硅片热氧化，生成双面2μm厚热氧化层。
(2)涂覆光刻胶，上硅衬底上表面曝光第一水平沟槽(覆盖竖直通孔位置)、触点图案，下硅衬底上表面曝光竖直通孔和第二水平沟槽，上硅衬底和下硅衬底的下表面分别曝光铁芯槽图案，第一水平沟槽、第二水 平沟槽及竖直通孔构成螺旋孔道。
(3)使用BOE(Buffered Oxide Etch)溶液去除暴露位置的二氧化硅，图形化。
(4)第二次涂胶，上硅衬底和下硅衬底的上下表面曝光竖直通孔图案。
(5)硅深刻蚀上下表面，刻蚀出硅通孔图案
(6)使用piranha溶液，去除光刻胶
(7)以氧化层作为掩蔽层进行上表面刻蚀，刻蚀出竖直通孔与上表面水平沟槽。以氧化层作为掩蔽层进行下表面刻蚀，刻蚀出铁芯图案。
(8)热氧化，形成2μm厚氧化层。
(9)取带有铁芯槽图案的金属掩膜版，将其上铁芯槽图案与一二号硅片下表面的铁芯槽图案对准，紧贴在硅片下表面上。
(10)下表面磁控溅射100nm金属镍作为种子层。
(11)电镀铁镍合金，使铁镍合金从底部填充到距硅片表面100um。
(12)将上硅衬底和下硅衬底的下表面相对，进行低温硅硅键合。
(13)下表面磁控溅射100nm金属钛为中间层，随后溅射500nm金属铜作为种子层。
(14)电镀金属铜，使电镀铜从底部填充到顶部水平导线下平面位置。
(15)上表面磁控溅射500nm金属铜。
(16)电镀金属铜，使得上表面全部结构被电镀铜完全覆盖。
(17)使用CMP(化学机械抛光机)进行上下表面金属铜减薄，直到金属铜减薄至于硅片热氧化层表面相同高度停止，随后CMP抛光表面，完成MEMS微型变压器的制作。
最后应说明的是：以上实施例仅用以说明本申请的技术方案，而非对其限制；尽管参照前述实施例对本申请进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例技术方案的精神和范围。

Claims (20)

  1. 一种MEMS环形螺线管变压器，其特征在于，包括：硅衬底、环形软磁铁芯、第一螺线管及第二螺线管；其中，
    所述环形软磁铁芯包裹在所述硅衬底内部，所述硅衬底上设置有第一螺旋孔道和第二螺旋孔道，且所述环形软磁铁芯的两个相对的边分别穿过所述第一螺旋孔道的中心和所述第二螺旋孔道的中心，所述第一螺线管及所述第二螺线管分别设置在所述第一螺旋孔道和所述第二螺旋孔道中。
  2. 根据权利要求1所述的MEMS环形螺线管变压器，其特征在于，所述硅衬底分为上硅衬底和下硅衬底，所述环形软磁铁芯分为上铁芯和下铁芯，且所述上铁芯和所述下铁芯形状相同；
    所述上硅衬底的下表面设置有与所述上铁芯形状相对应的铁芯槽，所述下硅衬底的上表面设置有与所述下铁芯形状相对应的铁芯槽，所述上铁芯和所述下铁芯分别设置在对应的铁芯槽中，且所述上硅衬底的下表面和所述下硅衬底的上表面相互键合，使得所述上铁芯的下表面和所述下铁芯的上表面相互对准。
  3. 根据权利要求1所述的MEMS环形螺线管变压器，其特征在于，所述第一螺旋孔道和所述第二螺旋孔道分别包括多条第一水平沟槽、多条第二水平沟槽以及多个竖直通孔；
    所述第一水平沟槽设置在所述硅衬底的上表面，所述第二水平沟槽设置在所述硅衬底的下表面，所述竖直通孔贯通所述硅衬底的上表面和下表面；
    所述第一螺旋孔道和所述第二螺旋孔道中的任一所述第一水平沟槽的首尾分别与两个竖直通孔连通，且所述两个竖直通孔分别与两个相邻的第二水平沟槽连通。
  4. 根据权利要求1所述的MEMS环形螺线管变压器，其特征在于，还包括四个引脚和四个引脚槽；
    所述四个引脚槽设置在所述硅衬底的上表面，所述四个引脚槽中的两个引脚槽分别与所述第一螺旋孔道的首尾连通，所述四个引脚槽中的另外两个引脚槽分别与所述第二螺旋孔道的首尾连通，所述四个引脚分别设置在所述四个引脚槽中。
  5. 根据权利要求1所述的MEMS环形螺线管变压器，其特征在于，所述环形软磁铁芯由铁镍合金材料或铁钴合金材料制作而成。
  6. 根据权利要求1所述的MEMS环形螺线管变压器，其特征在于，所述第一螺线管和所述第二螺线管由金属铜制作而成。
  7. 一种如权利要求1-6任一项所述的MEMS环形螺线管变压器的制造方法，其特征在于，包括：
    步骤1，分别制作上硅衬底和下硅衬底；其中，
    制作所述上硅衬底包括：
    对第一预设厚度的第一硅片进行第一次热氧化；
    根据第一螺旋孔道及第二螺旋孔道的结构和相对位置，分别在经第一次氧化后的所述第一硅片的上表面、内部和下表面硅深刻蚀出多条的第一水平沟槽、多个竖直通孔的上半部分以及铁芯槽；
    对经硅深刻蚀得到的所述第一硅片进行第二次热氧化，得到所述上硅衬底；
    制作所述下硅衬底包括：
    对第一预设厚度的第二硅片进行第一次热氧化；
    根据第一螺旋孔道及第二螺旋孔道的结构和相对位置，分别在经第一次氧化后的所述第二硅片的上表面、内部和下表面硅深刻蚀出铁芯槽、多个竖直通孔的下半部分及多条的第二水平沟槽；
    对所述第二硅片进行第二次热氧化，得到所述下硅衬底；
    步骤2，分别在所述上硅衬底和所述下硅衬底的铁芯槽内电镀形成上铁芯和下铁芯；
    步骤3，将所述上硅衬底的上表面和所述下硅衬底的下表面相对设置，且使所述上铁芯的下表面和所述下铁芯的上表面相互对准后，将所述上硅衬底和所述下硅衬底低温键合，键合后的所述上硅衬底和所述下硅衬底中形成所述第一螺旋孔道和所述第二螺旋孔道；
    步骤4，在所述第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管和第二螺线管，即得到MEMS环形螺线管变压器。
  8. 根据权利要求7所述方法，其特征在于，所述在所述上硅衬底的铁芯槽内电镀形成上铁芯，具体包括：
    将带有铁芯槽图案的金属掩膜版与所述上硅衬底的下表面上的铁芯槽配准后，将所述金属掩膜版紧贴在所述上硅衬底的下表面；
    在所述上硅衬底的下表面磁控溅射第二预设厚度金属镍或金属钴作为种子层后，在所述上硅衬底的铁芯槽内电镀第三预设厚度的铁镍合金或铁钴合金即得到上铁芯；相应地，
    所述在所述下硅衬底的铁芯槽内电镀形成下铁芯，具体包括：
    将带有铁芯槽图案的金属掩膜版与所述下硅衬底的上表面上的铁芯槽配准后，将所述金属掩膜版紧贴在所述下硅衬底的上表面；
    在所述下硅衬底的上表面磁控溅射第二预设厚度金属镍或金属钴作为种子层后，在所述下硅衬底的铁芯槽内电镀第三预设厚度的铁镍合金或铁钴合金即得到下铁芯。
  9. 根据权利要求7所述方法，其特征在于，所述在所述第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管和第二螺线管，具体包括：
    在所述下硅衬底的下表面磁控溅射第四预设厚度的金属钛作为中间层，并在所述中间层上磁控溅射第五预设厚度的金属铜作为种子层，再在所述第一螺旋孔道和所述第二螺旋孔道的第二沟槽和竖直通孔内电镀金属铜直至金属铜填充至第一沟槽的下平面的位置；
    在所述上硅衬底的上表面磁控溅射金属铜作为种子层后，电镀金属铜直至所述第一螺旋孔道和所述第二螺旋孔道完全被金属铜填满，即得到所述第一螺线管和所述第二螺线管。
  10. 根据权利要求7所述方法，其特征在于，所述制作所述上硅衬底还包括：
    根据四个引脚的结构和位置，在经第一次氧化后的所述第一硅片的上表面硅深刻蚀出四个引脚槽；相应地，
    在步骤S4中还包括：
    在所述四个引脚槽中电镀形成所述四个引脚。
  11. 一种MEMS回形螺线管变压器，其特征在于，包括：硅衬底、回形软磁铁芯、第一螺线管及第二螺线管；其中，
    所述回形软磁铁芯包裹在所述硅衬底内部，所述硅衬底上设置有第一螺旋孔道和第二螺旋孔道，且所述回形软磁铁芯的两个相对的边分别穿过 所述第一螺旋孔道的中心和所述第二螺旋孔道的中心，所述第一螺线管及所述第二螺线管分别设置在所述第一螺旋孔道和所述第二螺旋孔道中。
  12. 根据权利要求11所述的MEMS回形螺线管变压器，其特征在于，所述硅衬底分为上硅衬底和下硅衬底，所述回形软磁铁芯分为上铁芯和下铁芯，且所述上铁芯和所述下铁芯形状相同；
    所述上硅衬底的下表面设置有与所述上铁芯形状相对应的铁芯槽，所述下硅衬底的上表面设置有与所述下铁芯形状相对应的铁芯槽，所述上铁芯和所述下铁芯分别设置在对应的铁芯槽中，且所述上硅衬底的下表面和所述下硅衬底的上表面相互键合，使得所述上铁芯的下表面和所述下铁芯的上表面相互对准。
  13. 根据权利要求11所述的MEMS回形螺线管变压器，其特征在于，所述第一螺旋孔道和所述第二螺旋孔道分别包括多条第一水平沟槽、多条第二水平沟槽以及多个竖直通孔；
    所述第一水平沟槽设置在所述硅衬底的上表面，所述第二水平沟槽设置在所述硅衬底的下表面，所述竖直通孔贯通所述硅衬底的上表面和下表面；
    所述第一螺旋孔道和所述第二螺旋孔道中的任一所述第一水平沟槽的首尾分别与两个竖直通孔连通，且所述两个竖直通孔分别与两个相邻的第二水平沟槽连通。
  14. 根据权利要求11所述的MEMS回形螺线管变压器，其特征在于，还包括四个引脚和四个引脚槽；
    所述四个引脚槽设置在所述硅衬底的上表面，所述四个引脚槽中的两个引脚槽分别与所述第一螺旋孔道的首尾连通，所述四个引脚槽中的另外两个引脚槽分别与所述第二螺旋孔道的首尾连通，所述四个引脚分别设置在所述四个引脚槽中。
  15. 根据权利要求11所述的MEMS回形螺线管变压器，其特征在于，所述回形软磁铁芯由铁镍合金材料或铁钴合金材料制作而成。
  16. 根据权利要求11所述的MEMS回形螺线管变压器，其特征在于，所述第一螺线管和所述第二螺线管由金属铜制作而成。
  17. 一种如权利要求11-16任一项所述的MEMS回形螺线管变压器的 制造方法，其特征在于，包括：
    步骤1，分别制作上硅衬底和下硅衬底；其中，
    制作所述上硅衬底包括：
    对第一预设厚度的第一硅片进行第一次热氧化；
    根据第一螺旋孔道及第二螺旋孔道的结构和相对位置，分别在经第一次氧化后的所述第一硅片的上表面、内部和下表面硅深刻蚀出多条平行的第一水平沟槽、多个竖直通孔的上半部分以及铁芯槽；
    对经硅深刻蚀得到的所述第一硅片进行第二次热氧化，得到所述上硅衬底；
    制作所述下硅衬底包括：
    对第一预设厚度的第二硅片进行第一次热氧化；
    根据第一螺旋孔道及第二螺旋孔道的结构和相对位置，分别在经第一次氧化后的所述第二硅片的上表面、内部和下表面硅深刻蚀出铁芯槽、多个竖直通孔的下半部分及多条平行的第二水平沟槽；
    对所述第二硅片进行第二次热氧化，得到所述下硅衬底；
    步骤2，分别在所述上硅衬底和所述下硅衬底的铁芯槽内电镀形成上铁芯和下铁芯；
    步骤3，将所述上硅衬底的上表面和所述下硅衬底的下表面相对设置，且使所述上铁芯的下表面和所述下铁芯的上表面相互对准后，将所述上硅衬底和所述下硅衬底低温键合，键合后的所述上硅衬底和所述下硅衬底中形成所述第一螺旋孔道和所述第二螺旋孔道；
    步骤4，在所述第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管和第二螺线管，即得到MEMS回形螺线管变压器。
  18. 根据权利要求17所述方法，其特征在于，所述在所述上硅衬底的铁芯槽内电镀形成上铁芯，具体包括：
    将带有铁芯槽图案的金属掩膜版与所述上硅衬底的下表面上的铁芯槽配准后，将所述金属掩膜版紧贴在所述上硅衬底的下表面；
    在所述上硅衬底的下表面磁控溅射第二预设厚度金属镍或金属钴作为种子层后，在所述上硅衬底的铁芯槽内电镀第三预设厚度的铁镍合金或铁钴合金即得到上铁芯；相应地，
    所述在所述下硅衬底的铁芯槽内电镀形成下铁芯，具体包括：
    将带有铁芯槽图案的金属掩膜版与所述下硅衬底的上表面上的铁芯槽配准后，将所述金属掩膜版紧贴在所述下硅衬底的上表面；
    在所述下硅衬底的上表面磁控溅射第二预设厚度金属镍或金属钴作为种子层后，在所述下硅衬底的铁芯槽内电镀第三预设厚度的铁镍合金或铁钴合金即得到下铁芯。
  19. 根据权利要求17所述方法，其特征在于，所述在所述第一螺旋孔道和所述第二螺旋孔道中电镀形成第一螺线管和第二螺线管，具体包括：
    在所述下硅衬底的下表面磁控溅射第四预设厚度的金属钛作为中间层，并在所述中间层上磁控溅射第五预设厚度的金属铜作为种子层，再在所述第一螺旋孔道和所述第二螺旋孔道的第二沟槽和竖直通孔内电镀金属铜直至金属铜填充至第一沟槽的下平面的位置；
    在所述上硅衬底的上表面磁控溅射金属铜作为种子层后，电镀金属铜直至所述第一螺旋孔道和所述第二螺旋孔道完全被金属铜填满，即得到所述第一螺线管和所述第二螺线管。
  20. 根据权利要求17所述方法，其特征在于，所述制作所述上硅衬底还包括：
    根据四个引脚的结构和位置，在经第一次氧化后的所述第一硅片的上表面硅深刻蚀出四个引脚槽；相应地，
    在步骤S4中还包括：
    在所述四个引脚槽中电镀形成所述四个引脚。
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