WO2020082494A1 - 显示面板及其制作方法、显示模组 - Google Patents
显示面板及其制作方法、显示模组 Download PDFInfo
- Publication number
- WO2020082494A1 WO2020082494A1 PCT/CN2018/117724 CN2018117724W WO2020082494A1 WO 2020082494 A1 WO2020082494 A1 WO 2020082494A1 CN 2018117724 W CN2018117724 W CN 2018117724W WO 2020082494 A1 WO2020082494 A1 WO 2020082494A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal layer
- display panel
- substrate
- metal
- wire
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 195
- 239000002184 metal Substances 0.000 claims abstract description 195
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000007769 metal material Substances 0.000 claims description 44
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 28
- 239000010936 titanium Substances 0.000 claims description 28
- 229910052719 titanium Inorganic materials 0.000 claims description 28
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 14
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000010949 copper Substances 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 14
- 229910052737 gold Inorganic materials 0.000 claims description 14
- 239000010931 gold Substances 0.000 claims description 14
- 229910052709 silver Inorganic materials 0.000 claims description 14
- 239000004332 silver Substances 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 10
- 238000010586 diagram Methods 0.000 description 8
- 150000002739 metals Chemical class 0.000 description 6
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 229910001182 Mo alloy Inorganic materials 0.000 description 4
- UQZIWOQVLUASCR-UHFFFAOYSA-N alumane;titanium Chemical compound [AlH3].[Ti] UQZIWOQVLUASCR-UHFFFAOYSA-N 0.000 description 4
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1345—Conductors connecting electrodes to cell terminals
- G02F1/13452—Conductors connecting driver circuitry and terminals of panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Definitions
- the present application relates to the display field, in particular to a display panel, a manufacturing method thereof, and a display module.
- Liquid crystal display has the characteristics of light, thin, low power consumption and no radiation pollution, so it is widely used in mobile phones, personal digital assistants (PDA), digital cameras, notebook computers, etc.
- PDA personal digital assistants
- Various portable electronic devices Various portable electronic devices.
- the present application provides a display panel, a manufacturing method thereof, and a display module to solve the technical problem of light leakage in the opening area of the existing display panel.
- the present application provides a display panel including a substrate and a display device located on the substrate;
- the display panel further includes a wire on the substrate, the wire includes at least a first metal layer and a second metal layer, the first metal layer is on the substrate, and the second metal layer is on On the first metal layer.
- the metal material of the first metal layer is different from the metal material of the second metal layer.
- the metal material of the first metal layer includes titanium or an alloy containing titanium
- the metal material of the second metal layer includes one or more combinations of aluminum, copper, gold or silver.
- the thickness of the first metal layer is 15 nm to 50 nm.
- the first metal layer includes a first portion, a second portion located on one side of the first portion, and a third portion located on the other side of the first portion;
- the area of the second metal layer is not greater than the area of the first portion.
- the minimum distance between the boundary of the second portion or the third portion away from the first portion and the second metal layer is not less than 150 nm.
- the wire further includes a third metal layer on the second metal layer
- the metal material of the third metal layer includes one or more combinations of aluminum, copper, gold, or silver.
- This application also proposes a method for manufacturing a display panel, which includes:
- the first metal layer includes a first part, a second part located on one side of the first part, and a third part located on the other side of the first part, the area of the second metal layer is not larger than the The area of the first part.
- the metal material of the first metal layer is different from the metal material of the second metal layer;
- the metal material of the first metal layer includes titanium or an alloy containing titanium
- the metal material of the second metal layer includes one or more combinations of aluminum, copper, gold or silver.
- the minimum distance between the boundary of the second portion or the third portion away from the first portion and the second metal layer is not less than 150 nm.
- the present application also proposes a display module, which includes a display panel and a touch layer, a polarizer, and a cover plate on the display panel.
- the display panel includes a substrate and a display device on the substrate;
- the display panel further includes a wire on the substrate, the wire includes at least a first metal layer and a second metal layer, the first metal layer is on the substrate, and the second metal layer is on On the first metal layer.
- the metal material of the first metal layer includes titanium or an alloy containing titanium.
- the metal material of the second metal layer includes one or more combinations of aluminum, copper, gold, or silver.
- the thickness of the first metal layer is 15 nm to 50 nm.
- the first metal layer includes a first part, a second part located on one side of the first part, and a third part located on the other side of the first part;
- the area of the second metal layer is not greater than the area of the first portion.
- the minimum distance between the boundary of the second part or the third part away from the first part and the second metal layer is not less than 150 nm.
- the wire further includes a third metal layer on the second metal layer
- the metal material of the third metal layer includes one or more combinations of aluminum, copper, gold, or silver.
- the display panel of the present application includes a substrate and a wire on the substrate; the wire includes at least a first metal layer and a second metal layer, the first metal layer is on the substrate, and the second metal layer Located on the first metal layer.
- the area of the second metal layer is not greater than the area of the first metal layer. The light leakage area provided at the edge of the wire in the opening area is eliminated, and the contrast of the display is improved.
- FIG. 1 is a film structure diagram of a first embodiment of a wire in a display panel of this application
- FIG. 2 is a film structure diagram of a second embodiment of a wire in a display panel of this application.
- FIG. 3 is a step diagram of the method for manufacturing a display panel of the present application.
- FIG. 4 is a structural diagram of a method for manufacturing a display panel of the present application.
- FIG. 1 is a film structure diagram of a first embodiment of a wire in a display panel of the present application.
- the display panel includes a substrate 10 and a display device (not shown) located on the substrate 10.
- the display panel further includes wires 20 on the substrate 10.
- the substrate 10 may be one of a glass substrate, a quartz substrate, a resin substrate, etc., as a substrate, and the pixel electrode is manufactured.
- the substrate 10 may be a flexible substrate.
- the flexible substrate may be a polyimide film as a base.
- the wire 20 includes at least a first metal layer 201 and a second metal layer 202.
- the wire 20 includes a first metal layer 201 on the substrate 10 and a second metal layer 202 on the first metal layer 201.
- the orthographic projection of the second metal layer 202 on the first metal layer 201 is located in the first metal layer 201.
- the area of the second metal layer 202 is not greater than the area of the first metal layer 201
- the metal material of the first metal layer 201 is different from the metal material of the second metal layer 202.
- the metal material of the first metal layer 201 includes titanium or an alloy containing titanium.
- the metal material of the first metal layer 201 may be titanium, titanium aluminum alloy, titanium molybdenum alloy, or an alloy composed of titanium and other metals.
- the first metal layer 201 is a barrier layer.
- the first metal layer 201 is mainly used to increase the adhesion between the second metal layer 202 and the base substrate 10 and weaken the metal diffusion performance on the substrate 10. Since the first metal layer 201 does not serve as a conductive layer, even if there is weak titanium in the metal material of the first metal layer 201, there is no influence on the conductivity of the metal wire.
- the thickness of the first metal layer 201 is 15 nm to 50 nm.
- the metal material of the second metal layer 202 includes, but is not limited to, one or more combinations of aluminum, copper, gold, or silver. Alternatively, the metal material of the second metal layer 202 may be other metals with better conductivity.
- the second metal layer 202 is a conductive layer.
- the first metal layer 201 includes a first part 2011, a second part 2012 on one side of the first part 2011, and a third part 2013 on the other side of the first part 2011.
- the orthographic projection of the second metal layer 202 on the first metal layer 201 is located in the first portion 2011.
- the second part 2012 and the third part 2013 are tails formed by the etching process.
- the orthographic projection of the second metal layer 202 on the first metal layer 201 coincides with the first portion 2011.
- the second part 2012 and the third part 2013 may be, but not limited to, symmetry about the center line of the first part 2011.
- the minimum distance between the boundary of the second part 2012 away from the first part 2011 and the second metal layer 202 is L1.
- the minimum distance between the boundary of the third portion 2013 away from the first portion 2011 and the second metal layer 202 is L2.
- the pitch L1 or L2 When the pitch L1 or L2 is larger, the light leakage area is smaller.
- the minimum distance between the boundary of the second part 2012 or the third part 2013 away from the first part 2011 and the second metal layer 202 is not less than 150 nm. The minimum distance between the boundary of the second part 2012 or the third part 2013 away from the first part 2011 and the second metal layer 202
- the metal materials of the second part 2012 and the third part 2013 and the first part 2011 may be the same or different.
- the metal material of the second part 2012 and the third part 2013 is titanium.
- the metal material of the first part 2011 may be titanium, titanium aluminum alloy, titanium molybdenum alloy, or an alloy composed of titanium and other metals.
- FIG. 2 is a film structure diagram of the second embodiment of the wire 20 in the display panel of the present application.
- the wire 20 further includes a third metal layer 203 on the second metal layer 202.
- the third metal layer 203 has the same function as the second metal layer 202 and serves as a conductive layer.
- the third metal layer 203 may further include a groove (not shown), so that the third metal layer 203 and the second metal layer 202 are connected in parallel, reducing the impedance of the conductive layer.
- the metal material of the third metal layer 203 includes one or more combinations of aluminum, copper, gold, or silver.
- the wire 20 may further include a fourth metal layer on the third metal layer 203.
- the number of metal layers of the wire 20 is not specifically limited in this application.
- the design of the wires in this application can be applied to all the metal traces in the display panel. However, since only the metal traces in the opening area have light leakage areas, the metal traces in the display panel are designed according to specific conditions.
- FIG. 3 is a step diagram of a method for manufacturing a display panel of the present application.
- the manufacturing method of the display panel includes:
- the substrate 10 may be a glass substrate, a quartz substrate, a resin substrate, or the like as a substrate, and the pixel electrode is manufactured.
- the substrate 10 may be a flexible substrate.
- the flexible substrate may be a polyimide film as a base.
- FIG. 4 is a structural diagram of a method for manufacturing a display panel of the present application.
- the first metal layer 201 is a barrier layer.
- the first metal layer 201 is mainly used to increase the adhesion between the second metal layer 202 and the base substrate 10 and weaken the metal diffusion performance on the substrate 10. Since the first metal layer 201 does not serve as a conductive layer, there is titanium in the metal material of the first metal layer 201 which has weak conductivity.
- the thickness of the first metal layer 201 is 15 nm to 50 nm.
- the first metal layer 201 includes a first portion 2011, a second portion 2012 located on one side of the first portion 2011, and a third portion 2013 located on the other side of the first portion 2011.
- the second part 2012 and the third part 2013 are tails formed by the etching process.
- the second part 2012 and the third part 2013 may be, but not limited to, symmetry about the center line of the first part 2011.
- the second metal layer 202 is a conductive layer.
- the orthographic projection of the second metal layer 202 on the first metal layer 201 is located in the first metal layer 201.
- the area of the second metal layer 202 is not greater than the area of the first metal layer 201.
- the orthographic projection of the second metal layer 202 on the first metal layer 201 coincides with the first portion 2011.
- the metal material of the first metal layer 201 is different from the metal material of the second metal layer 202.
- the metal material of the first metal layer 201 includes titanium or an alloy containing titanium.
- the metal material of the first metal layer 201 may be titanium, titanium aluminum alloy, titanium molybdenum alloy, or an alloy composed of titanium and other metals.
- the metal material of the second metal layer 202 includes, but is not limited to, one or more combinations of aluminum, copper, gold, or silver. Alternatively, the metal material of the second metal layer 202 may be other metals with better conductivity.
- the minimum distance between the boundary of the second part 2012 away from the first part 2011 and the second metal layer 202 is L1.
- the minimum distance between the boundary of the third portion 2013 away from the first portion 2011 and the second metal layer 202 is L2.
- the pitch L1 or L2 When the pitch L1 or L2 is larger, the light leakage area is smaller.
- the minimum distance between the boundary of the second part 2012 or the third part 2013 away from the first part 2011 and the second metal layer 202 is not less than 150 nm. The minimum distance between the boundary of the second part 2012 or the third part 2013 away from the first part 2011 and the second metal layer 202
- the metal materials of the second part 2012 and the third part 2013 and the first part 2011 may be the same or different.
- the metal material of the second part 2012 and the third part 2013 is titanium.
- the metal material of the first part 2011 may be titanium, titanium aluminum alloy, titanium molybdenum alloy, or an alloy composed of titanium and other metals.
- the wire 20 further includes a third metal layer 203 on the second metal layer 202.
- the third metal layer 203 may further include a groove (not shown), so that the third metal layer 203 and the second metal layer 202 are connected in parallel, reducing the impedance of the conductive layer.
- the metal material of the third metal layer 203 includes one or more combinations of aluminum, copper, gold, or silver.
- the wire 20 may further include a fourth metal layer on the third metal layer 203.
- the number of metal layers of the wire 20 is not specifically limited in this application.
- the design of the wires in this application can be applied to all the metal traces in the display panel. However, since only the metal traces in the opening area have light leakage areas, the metal traces in the display panel are designed according to specific conditions.
- a display module including the display panel and a touch layer, a polarizer and a cover plate on the display panel.
- the operation of the display module is the same as that of the above display panel, and will not be described here.
- the present application provides a display panel and a method for manufacturing the same.
- the display panel includes a substrate and a wire on the substrate; the wire includes at least a first metal layer and a second metal layer, the first metal layer is located On the substrate, the second metal layer is located on the first metal layer.
- the area of the second metal layer is not greater than the area of the first metal layer. The light leakage area provided at the edge of the wire in the opening area is eliminated, and the contrast of the display is improved.
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Abstract
一种显示面板及其制作方法、显示模组,显示面板包括基板(10)及位于基板(10)上的显示器件;其中,显示面板还包括基板(10)上的导线(20),导线(20)至少包括第一金属层(201)和第二金属层(202),第一金属层(201)位于基板(10)上,第二金属层(202)位于第一金属层(201)上;第二金属层(202)的面积不大于第一金属层(201)的面积。
Description
本申请涉及显示领域,特别涉及一种显示面板及其制作方法、显示模组。
液晶显示器(Liquid Crystal Display,简称LCD)具有外型轻、薄、耗电量少以及无辐射污染等特性,因此被广泛地应用在移动电话、个人数字助理(PDA)、数字相机、笔记本电脑等各种便携式电子设备上。
现有技术中,对于大尺寸的显示面板,当背光源经过下偏光片进入面板时,由于开口区中的入射光线,存在与设置于开口区中的金属的截面非平行或垂直分量,导致入射光线进入开口区时,设置于开口区中的导线的边缘存在漏光区域,降低了显示器的对比度。
本申请提供一种显示面板及其制作方法、显示模组,以解决现有显示面板开口区出现漏光的技术问题。
本申请提供一种显示面板,其包括基板及位于所述基板上的显示器件;
其中,所述显示面板还包括为所述基板上的导线,所述导线至少包括第一金属层和第二金属层,所述第一金属层位于所述基板上,所述第二金属层位于所述第一金属层上。
在本申请的显示面板中,所述第一金属层的金属材料与所述第二金属层的金属材料不同。
在本申请的显示面板中,所述第一金属层的金属材料包括钛、或包含钛的合金;
所述第二金属层的金属材料包括铝、铜、金或银中的一种或一种以上的组合物。
在本申请的显示面板中,所述第一金属层的厚度为15纳米至50纳米。
在本申请的显示面板中,所述第一金属层包括第一部分、位于所述第一部分一侧的第二部分及位于所述第一部分另一侧的第三部分;
所述第二金属层的面积不大于所述第一部分的面积。
在本申请的显示面板中,远离所述第一部分的所述第二部分或所述第三部分的边界与所述第二金属层的最小间距不小于150纳米。
在本申请的显示面板中,所述导线还包括位于所述第二金属层上的第三金属层;
所述第三金属层的金属材料包括铝、铜、金或银中的一种或一种以上的组合物。
本申请还提出了一种显示面板的制作方法,其包括:
提供一基板;
在所述基板上形成第一金属层;
在所述第一金属层上形成第二金属层;
其中,所述第一金属层包括第一部分、位于所述第一部分一侧的第二部分、及位于所述第一部分另一侧的第三部分,所述第二金属层的面积不大于所述第一部分的面积。
在本申请的制作方法中,所述第一金属层的金属材料与所述第二金属层的金属材料不同;
所述第一金属层的金属材料包括钛、或包含钛的合金;
所述第二金属层的金属材料包括铝、铜、金或银中的一种或一种以上的组合物。
在本申请的制作方法中,远离所述第一部分的所述第二部分或所述第三部分的边界与所述第二金属层的最小间距不小于150纳米。
本申请还提出了一种显示模组,其中,包括显示面板及位于所述显示面板上的触控层、偏光片及盖板,所述显示面板包括基板及位于所述基板上的显示器件;
其中,所述显示面板还包括为所述基板上的导线,所述导线至少包括第一金属层和第二金属层,所述第一金属层位于所述基板上,所述第二金属层位于所述第一金属层上。
在本申请的显示模组中,所述第一金属层的金属材料包括钛、或包含钛的合金。
在本申请的显示模组中,所述第二金属层的金属材料包括铝、铜、金或银中的一种或一种以上的组合物。
在本申请的显示模组中,所述第一金属层的厚度为15纳米至50纳米。
在本申请的显示模组中,所述第一金属层包括第一部分、位于所述第一部分一侧的第二部分及位于所述第一部分另一侧的第三部分;
所述第二金属层的面积不大于所述第一部分的面积。
在本申请的显示模组中,远离所述第一部分的所述第二部分或所述第三部分的边界与所述第二金属层的最小间距不小于150纳米。
在本申请的显示模组中,所述导线还包括位于所述第二金属层上的第三金属层;
所述第三金属层的金属材料包括铝、铜、金或银中的一种或一种以上的组合物。
本申请所述显示面板包括基板及位于所述基板上的导线;所述导线至少包括第一金属层和第二金属层,所述第一金属层位于所述基板上,所述第二金属层位于所述第一金属层上。所述第二金属层的面积不大于所述第一金属层的面积。消除了设置于开口区中导线边缘的漏光区域,提高了显示器的对比度。
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本申请显示面板中导线的第一种实施例的膜层结构图;
图2为本申请显示面板中导线的第二种实施例的膜层结构图。
图3为本申请显示面板制作方法的步骤图;
图4为本申请显示面板制作方法一种结构图。
以下各实施例的说明是参考附加的图示,用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语,例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等,仅是参考附加图式的方向。因此,使用的方向用语是用以说明及理解本申请,而非用以限制本申请。在图中,结构相似的单元是用以相同标号表示。
请参阅图1,图1为本申请显示面板中导线的第一种实施例的膜层结构图。
所述显示面板包括基板10及位于所述基板10上的显示器件(未画出)。
所述显示面板还包括位于所述基板10上的导线20。
所述基板10可以为玻璃基板、石英基板、树脂基板等中的一种作为衬底,进行像素电极的制作。
在一种实施例中,所述基板10可以为柔性基板。所述柔性基板可以选择聚酰亚胺薄膜作为基底。
所述导线20至少包括第一金属层201和第二金属层202。
请参阅图1,所述导线20包括位于所述基板10上的第一金属层201、及位于所述第一金属层201上的第二金属层202。所述第二金属层202在所述第一金属层201上的正投影位于所述第一金属层201内。所述第二金属层202的面积不大于所述第一金属层201的面积
在一种实施例中,所述第一金属层201的金属材料与所述第二金属层202的金属材料不同。所述第一金属层201的金属材料包括钛、或包含钛的合金。例如,所述第一金属层201的金属材料可以为钛、钛铝合金、钛钼合金或钛与其他金属组成的合金。
在一种实施例中,所述第一金属层201为阻挡层。所述第一金属层201主要用于增加所述第二金属层202与衬底基板10的附着力、及减弱金属在基板10上的扩散性能。由于所述第一金属层201不作为导电层,因此所述第一金属层201的金属材料中即使存在导电性较弱的钛也对金属导线的导电性不会存在影响。
在一种实施例中,所述第一金属层201的厚度为15纳米至50纳米。
所述第二金属层202的金属材料包括但不限于铝、铜、金或银中的一种或一种以上的组合物。或者,所述第二金属层202的金属材料可以为其他导电性较好的金属。
在一种实施例中,所述第二金属层202为导电层。
请参阅图1,所述第一金属层201包括第一部分2011、位于所述第一部分2011一侧的第二部分2012及位于所述第一部分2011另一侧的第三部分2013。所述第二金属层202在所述第一金属层201上的正投影位于所述第一部分2011内。所述第二部分2012及所述第三部分2013为蚀刻工艺而形成的拖尾。
在一种实施例中,所述第二金属层202在所述第一金属层201上的正投影与所述第一部分2011重合。
所述第二部分2012与所述第三部分2013可以但不限于以所述第一部分2011的中线为轴对称。
在一种实施例中,远离所述第一部分2011的所述第二部分2012的边界与所述第二金属层202的最小间距为L1。远离所述第一部分2011的所述第三部分2013的边界与所述第二金属层202的最小间距为L2。
当间距L1或L2越大时,漏光区域越少。间距L1或L2越小,漏光区域越大。其中,在第一部分及第二部分满足遮挡漏光的条件下,尽量减小间距L1及L2。
在一种实施例中,远离所述第一部分2011的所述第二部分2012或所述第三部分2013的边界与所述第二金属层202的最小间距不小于150纳米。远离所述第一部分2011的所述第二部分2012或所述第三部分2013的边界与所述第二金属层202的最小间距
所述第二部分2012及所述第三部分2013与所述第一部分2011的金属材料可以相同或不同。在一种实施例中,所述第二部分2012及所述第三部分2013的金属材料为钛。所述第一部分2011的金属材料可以为钛、钛铝合金、钛钼合金或钛与其他金属组成的合金。
请参阅图2,图2为本申请显示面板中导线20的第二种实施例的膜层结构图。
所述导线20还包括位于所述第二金属层202上的第三金属层203。
所述第三金属层203与所述第二金属层202的功能相同,作为导电层。
在一种实施例中,所述第三金属层203上还可以包括凹槽(未画出),使得第三金属层203与第二金属层202并联连接,减小导电层的阻抗。
在一种实施例中,所述第三金属层203的金属材料包括铝、铜、金或银中的一种或一种以上的组合物。
在一种实施例中,所述导线20还可以包括位于所述第三金属层203上第四金属层。所述导线20的金属层数量本申请不作具体限定。
本申请中导线的设计可以应用于所述显示面板中所有的金属走线中。但是,由于只有位于开口区中的金属走线出现漏光区域,因此根据具体情况对显示面板中金属走线进行设计。
请参阅图3,图3为本申请显示面板制作方法的步骤图。
所述显示面板的制作方法包括:
S10、提供一基板;
在本步骤中,所述基板10可以为玻璃基板、石英基板、树脂基板等中的一种作为衬底,进行所述像素电极的制作。
在一种实施例中,所述基板10可以为柔性基板。所述柔性基板可以选择聚酰亚胺薄膜作为基底。
S20、在所述基板上形成第一金属层;
请参阅图4,图4为本申请显示面板制作方法一种结构图。
所述第一金属层201为阻挡层。所述第一金属层201主要用于增加所述第二金属层202与衬底基板10的附着力、及减弱金属在基板10上的扩散性能。由于所述第一金属层201不作为导电层,因此所述第一金属层201的金属材料中存在导电性较弱的钛。
在一种实施例中,所述第一金属层201的厚度为15纳米至50纳米。
所述第一金属层201包括第一部分2011、位于所述第一部分2011一侧的第二部分2012及位于所述第一部分2011另一侧的第三部分2013。所述第二部分2012及所述第三部分2013为蚀刻工艺而形成的拖尾。所述第二部分2012与所述第三部分2013可以但不限于以所述第一部分2011的中线为轴对称。
S30、在所述第一金属层上形成第二金属层;
请参阅图1,所述第二金属层202为导电层。所述第二金属层202在所述第一金属层201上的正投影位于所述第一金属层201内。所述第二金属层202的面积不大于所述第一金属层201的面积。
在一种实施例中,所述第二金属层202在所述第一金属层201上的正投影与所述第一部分2011重合。
在一种实施例中,所述第一金属层201的金属材料与所述第二金属层202的金属材料不同。所述第一金属层201的金属材料包括钛、或包含钛的合金。例如,所述第一金属层201的金属材料可以为钛、钛铝合金、钛钼合金或钛与其他金属组成的合金。所述第二金属层202的金属材料包括但不限于铝、铜、金或银中的一种或一种以上的组合物。或者,所述第二金属层202的金属材料可以为其他导电性较好的金属。
在一种实施例中,远离所述第一部分2011的所述第二部分2012的边界与所述第二金属层202的最小间距为L1。远离所述第一部分2011的所述第三部分2013的边界与所述第二金属层202的最小间距为L2。
当间距L1或L2越大时,漏光区域越少。间距L1或L2越小,漏光区域越大。其中,在第一部分及第二部分满足遮挡漏光的条件下,尽量减小间距L1及L2。
在一种实施例中,远离所述第一部分2011的所述第二部分2012或所述第三部分2013的边界与所述第二金属层202的最小间距不小于150纳米。远离所述第一部分2011的所述第二部分2012或所述第三部分2013的边界与所述第二金属层202的最小间距
所述第二部分2012及所述第三部分2013与所述第一部分2011的金属材料可以相同或不同。在一种实施例中,所述第二部分2012及所述第三部分2013的金属材料为钛。所述第一部分2011的金属材料可以为钛、钛铝合金、钛钼合金或钛与其他金属组成的合金。
请参阅图2,所述导线20还包括位于所述第二金属层202上的第三金属层203。
在一种实施例中,所述第三金属层203上还可以包括凹槽(未画出),使得第三金属层203与第二金属层202并联连接,减小导电层的阻抗。
在一种实施例中,所述第三金属层203的金属材料包括铝、铜、金或银中的一种或一种以上的组合物。
在一种实施例中,所述导线20还可以包括位于所述第三金属层203上第四金属层。所述导线20的金属层数量本申请不作具体限定。
本申请中导线的设计可以应用于所述显示面板中所有的金属走线中。但是,由于只有位于开口区中的金属走线出现漏光区域,因此根据具体情况对显示面板中金属走线进行设计。
根据本申请的又一个方面,还提供了一种显示模组,所述显示模组包括所述显示面板及位于所述显示面板上的触控层、偏光片及盖板。所述显示模组的工作与上述显示面板的相同,此处不在赘述。
本申请提供了一种显示面板及其制作方法,所述显示面板包括基板及位于所述基板上的导线;所述导线至少包括第一金属层和第二金属层,所述第一金属层位于所述基板上,所述第二金属层位于所述第一金属层上。所述第二金属层的面积不大于所述第一金属层的面积。消除了设置于开口区中导线边缘的漏光区域,提高了显示器的对比度。
综上所述,虽然本申请已以优选实施例揭露如上,但上述优选实施例并非用以限制本申请,本领域的普通技术人员,在不脱离本申请的精神和范围内,均可作各种更动与润饰,因此本申请的保护范围以权利要求界定的范围为准。
Claims (17)
- 一种显示面板,其中,包括基板及位于所述基板上的显示器件;其中,所述显示面板还包括为所述基板上的导线,所述导线至少包括第一金属层和第二金属层,所述第一金属层位于所述基板上,所述第二金属层位于所述第一金属层上。
- 根据权利要求1所述的显示面板,其中,所述第一金属层的金属材料包括钛、或包含钛的合金。
- 根据权利要求1所述的显示面板,其中,所述第二金属层的金属材料包括铝、铜、金或银中的一种或一种以上的组合物。
- 根据权利要求1所述的显示面板,其中,所述第一金属层的厚度为15纳米至50纳米。
- 根据权利要求1所述的显示面板,其中,所述第一金属层包括第一部分、位于所述第一部分一侧的第二部分及位于所述第一部分另一侧的第三部分;所述第二金属层的面积不大于所述第一部分的面积。
- 根据权利要求5所述的显示面板,其中,远离所述第一部分的所述第二部分或所述第三部分的边界与所述第二金属层的最小间距不小于150纳米。
- 根据权利要求1所述的显示面板,其中,所述导线还包括位于所述第二金属层上的第三金属层;所述第三金属层的金属材料包括铝、铜、金或银中的一种或一种以上的组合物。
- 一种显示面板的制作方法,其中,包括:提供一基板;在所述基板上形成第一金属层;在所述第一金属层上形成第二金属层;其中,所述第一金属层包括第一部分、位于所述第一部分一侧的第二部分、及位于所述第一部分另一侧的第三部分,所述第二金属层的面积不大于所述第一部分的面积。
- 根据权利要求8所述的制作方法,其中,所述第一金属层的金属材料与所述第二金属层的金属材料不同;所述第一金属层的金属材料包括钛、或包含钛的合金;所述第二金属层的金属材料包括铝、铜、金或银中的一种或一种以上的组合物。
- 根据权利要求8所述的制作方法,其中,远离所述第一部分的所述第二部分或所述第三部分的边界与所述第二金属层的最小间距不小于150纳米。
- 一种显示模组,其中,包括显示面板及位于所述显示面板上的触控层、偏光片及盖板,所述显示面板包括基板及位于所述基板上的显示器件;其中,所述显示面板还包括为所述基板上的导线,所述导线至少包括第一金属层和第二金属层,所述第一金属层位于所述基板上,所述第二金属层位于所述第一金属层上。
- 根据权利要求11所述的显示模组,其中,所述第一金属层的金属材料包括钛、或包含钛的合金。
- 根据权利要求11所述的显示模组,其中,所述第二金属层的金属材料包括铝、铜、金或银中的一种或一种以上的组合物。
- 根据权利要求11所述的显示模组,其中,所述第一金属层的厚度为15纳米至50纳米。
- 根据权利要求11所述的显示模组,其中,所述第一金属层包括第一部分、位于所述第一部分一侧的第二部分及位于所述第一部分另一侧的第三部分;所述第二金属层的面积不大于所述第一部分的面积。
- 根据权利要求15所述的显示模组,其中,远离所述第一部分的所述第二部分或所述第三部分的边界与所述第二金属层的最小间距不小于150纳米。
- 根据权利要求11所述的显示模组,其中,所述导线还包括位于所述第二金属层上的第三金属层;所述第三金属层的金属材料包括铝、铜、金或银中的一种或一种以上的组合物。
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