WO2020078112A1 - 开口掩膜板、开口掩膜板组件、和使用该开口掩膜板的蒸镀方法 - Google Patents

开口掩膜板、开口掩膜板组件、和使用该开口掩膜板的蒸镀方法 Download PDF

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Publication number
WO2020078112A1
WO2020078112A1 PCT/CN2019/103309 CN2019103309W WO2020078112A1 WO 2020078112 A1 WO2020078112 A1 WO 2020078112A1 CN 2019103309 W CN2019103309 W CN 2019103309W WO 2020078112 A1 WO2020078112 A1 WO 2020078112A1
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Prior art keywords
mask plate
opening
opening mask
cell
etched portion
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PCT/CN2019/103309
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English (en)
French (fr)
Inventor
徐鹏
Original Assignee
京东方科技集团股份有限公司
成都京东方光电科技有限公司
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Application filed by 京东方科技集团股份有限公司, 成都京东方光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/640,333 priority Critical patent/US20210140031A1/en
Publication of WO2020078112A1 publication Critical patent/WO2020078112A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present disclosure generally relates to electronic technology, and particularly to an opening mask plate, an opening mask plate assembly, and a vapor deposition method using the opening mask plate.
  • the opening mask of the OLED display panel when using the opening mask to vapor-deposit to obtain the film layer, it is necessary to consider the internal and external shadow effects.
  • the external shadow effect will cause the film layer to overlap or interfere, which may affect the packaging effect and other bad edges.
  • the shadow of the metal material spreading out to the OLED packaging area due to the low adhesion between the metal compound film layer and the inorganic film layer used for packaging, it will cause film peeling (Peeling), resulting in packaging failure and lower product reliability.
  • the outer shadow of the metal compound film such as LiF
  • a Newton ring or the like will appear in the appearance inspection. At this time, a gap has appeared between the metal compound film and the packaging film. In the reliability test At this time, it is easy to cause package failure, thereby affecting the normal operation of the internal OLED device.
  • an opening mask plate including:
  • each cell includes an open area and a non-open area, the non-open area includes a half-etched portion and a solid material retention portion, wherein:
  • the solid material retention portion is located around the opening area of the cell, and the half-etched portion is separated from the opening area by the solid material retention portion.
  • the half-etched portion of each cell is in contact with the half-etched portion of the cell adjacent to the cell.
  • the thickness of the solid retention portion is about 145-155um.
  • the difference between the thickness of the solid remaining portion minus the thickness of the half-etched portion is at least about 10 um.
  • the thickness of the half-etched portion is about 70-80 um.
  • the width of the solid retention portion is greater than or equal to about 0.5 mm.
  • the sum of the width of the half-etched portion of each cell and the half-etched portion of the cell adjacent to the cell is greater than or equal to about 0.5 mm.
  • an opening mask assembly including:
  • a substrate with a convex film layer A substrate with a convex film layer
  • the convex film layer is located in the half-etched portion of the opening mask.
  • a vapor deposition method using the opening mask plate according to any one of the foregoing embodiments comprising:
  • a substrate having a convex film layer is provided on the opening mask plate, wherein the convex film layer is located in the half-etched portion of the opening mask plate;
  • the opening area of the opening mask is vapor-deposited through a nozzle.
  • the nozzle is set so that the maximum angle of spraying is approximately 53 degrees to the horizontal plane parallel to the opening mask.
  • FIG. 1 is a partial structural schematic diagram of an opening mask plate in the related art
  • FIG. 2 is a partial schematic structural view of an opening mask provided by an embodiment of the present disclosure
  • FIG. 3 is a partial plan view of an opening mask provided by an embodiment of the present disclosure.
  • FIG. 1 shows a partial structure diagram of an opening mask in the related art.
  • the opening mask includes an opening area and a non-opening area defining the opening area.
  • the non-opening area includes a solid-retained portion and a half-etched portion.
  • the half-etched portion is formed directly around each opening area .
  • a glass substrate having a convex film layer is provided on the surface of the opening mask where the half-etched portion is formed.
  • An embodiment of the present disclosure provides an opening mask plate.
  • the opening mask includes: a plurality of cells arranged in an array, each cell includes an opening area and a non-opening area, the non-opening area includes a half-etched portion and a solid material retention portion, wherein: In at least one cell of the cell, the solid material retention portion is located around the opening area of the cell, and the half-etched portion is isolated from the opening area by the solid material retention portion.
  • an opening mask plate assembly including the foregoing opening mask plate, and a vapor deposition method using the foregoing opening mask plate.
  • FIG. 2 is a partial structural schematic view of an opening mask plate provided by an embodiment of the present disclosure
  • FIG. 3 is a partial top view of the opening mask plate provided by an embodiment of the present disclosure.
  • the opening mask provided by an embodiment of the present disclosure includes a plurality of cells arranged in an array (in the illustrated embodiment, two adjacent cells 100a and 100b are used as examples), and each cell 100a or 110b includes an opening area 301 ⁇ ⁇ ⁇ ⁇ 201,202.
  • the non-opening area includes the half-etched portion 201 and the solid material remaining portion 202.
  • the solid material retention portion 202 is located around the opening area 301 of the cell 100a or 110b, and the half-etched portion 201 is retained by the solid material The portion 202 is isolated from the opening area 301.
  • FIG. 3 exemplarily shows two adjacent units 100a and 100b, each unit 100a or 100b has an opening area 301, and each opening area 301 is surrounded by the solid material retaining portion 202, while the solid material remains The portion 202 is again surrounded by the half-etched portion 201.
  • the vapor deposition material when an opening mask is used for vapor deposition, the vapor deposition material needs to be sprayed with a nozzle. Since the liquid is sprayed at a certain angle when the nozzle sprays, an external shadow will appear.
  • the solid material retention portion at the edge of the opening area can be used to block external shadows.
  • the B value is necessarily smaller than the A value.
  • the width of the outer shadow is B. It can be seen that it is much smaller than the width A of the outer shadow in FIG. 1, and the value of A is about 200 um.
  • the opening mask shown in Figure 2 there is a certain width of solid material around the opening area, which is used to block the "floating" phenomenon of metal particles.
  • the B value of the outer shadow is also much smaller than A value.
  • the opening mask plate provided by the embodiment of the present disclosure, since the solid material retention portion is located around the opening area, the vapor deposition material cannot enter the semi-etched portion through the solid material retention portion during vapor deposition spraying, so the vapor deposition material enters the opening mask The area covered by the diaphragm is smaller, thereby reducing the external shadow effect of the opening mask.
  • the number of the solid material retaining portions 202 is as small as possible, which can reduce the difficulty of the process. At the same time, the number of the solid material retaining portions 202 is as small as possible, and the width of the solid material retaining portions 202 is as small as possible, which can make the opening mask plate
  • the weight is smaller, which can effectively improve the sagging amount of the opening mask when the net is stretched, that is, the flatness (Flatness) is improved. Improving the flatness can further ensure the closeness of the opening mask and the substrate during the evaporation process, and further ensure that the shadow on the entire surface is reduced.
  • the flatness is about 350um.
  • the flatness can reach about 250um.
  • the overall thickness of the opening mask is about 145-155um, and the overall thickness of the opening mask is about 150um. It is more common that the thickness of the material retention portion 202 is the same as the overall thickness of the opening mask, which is also about 145-155um. For example, H1 marked in FIG. 2 is the thickness of the solid material retention portion 202.
  • the existence of the half-etched portion 201 is mainly to avoid the protruding film layer 204. Generally, as long as the half-etched portion 201 is etched away by about 10um, the purpose of avoiding the protruding film layer 204 can be achieved.
  • the difference between the thickness of the solid material retention portion 202 minus the thickness of the half-etched portion 201 of the opening mask is at least about 10 ⁇ m. When the thickness of the solid material retention portion 202 is about 150 um, the thickness of the half-etched portion 201 of the opening mask is less than about 140 um, and H2 marked in FIG. 2 is the thickness of the half-etched portion 201.
  • the thickness of the half-etched part of the opening mask is generally about 70-80um.
  • the width of the solid material retaining portion 202 of the opening mask plate is greater than or equal to about 0.5 mm.
  • D1 marked in FIG. 2 is the width of the solid material retention portion 202.
  • the sum of the width of the half-etched portion of each cell and the half-etched portion of the cell adjacent to the cell is greater than or equal to about 0.5 mm.
  • D2 marked in FIG. 2 is the width of the half-etched portion 201.
  • an opening mask plate assembly is also provided.
  • the opening mask plate assembly includes: a substrate 203 having a protruding film layer 204; and the opening mask plate as described above.
  • the convex film layer 204 is located in the half-etched portion 201 of the opening mask. In this way, the half-etched portion is used to avoid the protruding film layer on the substrate and to prevent the opening mask plate from squeezing or rubbing with the protruding film layer, causing damage to the film structure and causing granulation.
  • the protruding film layer on the substrate is half-etched at the corresponding position on the opening mask plate.
  • the protruding film layer on the substrate is usually used to form a barrier when packaging an OLED device, so its integrity should be guaranteed.
  • the half-etching of the corresponding area can effectively avoid the squeezing and friction caused by the protruding film layer and the opening mask, resulting in the destruction of the barrier.
  • a vapor deposition method using the aforementioned opening mask includes: providing an opening mask plate as described above; providing a substrate with a convex film layer on the opening mask plate, wherein the convex film layer is located in a half-etched portion of the opening mask plate; and , Through the nozzle to vaporize the opening area of the opening mask.
  • the nozzle 400 is set such that the maximum angle of spraying is approximately 53 degrees to the horizontal plane parallel to the opening mask.
  • the vapor deposition material cannot enter the semi-etched portion through the solid reserved portion during vapor deposition spraying, so the vapor deposition material The area covered by the entrance mask plate is smaller, thereby reducing the external shadow effect of the opening mask plate.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

一种开口掩膜板，包括：呈阵列方式布置的多个单元，每个单元包括开口区域和非开口区域，非开口区域包括半刻蚀部分（201）和实材保留部分（202），其中：在多个单元的至少一个单元中，实材保留部分（202）位于该单元的开口区域四周，半刻蚀部分（201）通过实材保留部分（202）与开口区域隔离开。还提供了一种开口掩膜板组件，以及一种使用开口掩膜板的蒸镀方法。

Description

开口掩膜板、开口掩膜板组件、和使用该开口掩膜板的蒸镀方法
相关申请的交叉引用
本公开要求于2018年10月15日向中国国家知识产权局递交的中国专利申请201811197777.6的权益，该申请的公开内容通过引用整体并入本公开中。
技术领域
本公开一般涉及电子技术，尤其涉及一种开口掩膜板、一种开口掩膜板组件、和一种使用该开口掩膜板的蒸镀方法。
背景技术
在OLED显示面板的开口掩膜板(Open mask)设计中，利用开口掩膜板进行蒸镀得到膜层时，需要考虑到内外阴影(Shadow)效应。外阴影效应会造成膜层叠加或干涉，可能影响封装效果及其他边缘不良。特别对于金属材料阴影外扩至OLED封装区域，由于金属化合物膜层与封装使用的无机膜层粘附力较小，会引起膜层剥离(Peeling)，造成封装失效从而导致产品信赖性较低。通常来讲，金属化合物膜层(如LiF)外阴影外扩至封装区域时，外观检查会出现牛顿环等现象，此时金属化合物膜层与封装膜层之间已经出现间隙，在信赖性测试时，很容易造成封装失效，从而影响内部OLED器件的正常工作。
所以，改善开口掩膜板的外阴影效应是亟待解决的问题。
发明内容
根据本公开的一个方面，提供了一种开口掩膜板，包括：
呈阵列方式布置的多个单元，每个单元包括开口区域和非开口区域，非开口区域包括半刻蚀部分和实材保留部分，其中：
在多个单元的至少一个单元中，实材保留部分位于该单元的开口区域四周，半刻蚀部分通过实材保留部分与开口区域隔离开。
在一些实施例中，每个单元的半蚀刻部分和与该单元相邻的单元的半蚀刻部分相接。
在一些实施例中，实材保留部分的厚度为约145-155um。
在一些实施例中，实材保留部分的厚度减去半刻蚀部分的厚度的差值至少为约10um。
在一些实施例中，半刻蚀部分的厚度为约70-80um。
在一些实施例中，实材保留部分的宽度大于或等于约0.5mm。
在一些实施例中，每个单元的半蚀刻部分和与该单元相邻的单元的半蚀刻部分的宽度之和大于或等于约0.5mm。
根据本公开的另一个方面，提供了一种开口掩膜板组件，包括：
基板，基板具有凸出膜层；和
如前述任一实施例所述的开口掩膜板；
其中，凸出膜层位于开口掩膜板的半蚀刻部分中。
根据本公开的又一个方面，还提供了一种使用如前述任一实施例所述的开口掩膜板的蒸镀方法，该蒸镀方法包括：
提供开口掩膜板；
在开口掩膜板上设置具有凸出膜层的基板，其中，凸出膜层位于开口掩膜板的半蚀刻部分中；以及
通过喷嘴对开口掩膜板的开口区域实施蒸镀。
在一些实施例中，喷嘴被设置成：喷洒的最大角度为和与开口掩膜板平行的水平面呈大致53度。
附图说明
图1为相关技术中的开口掩膜板的局部结构示意图；
图2为本公开实施例提供的开口掩膜板的局部结构示意图；
图3为本公开实施例提供的开口掩膜板的局部俯视图。
具体实施方式
为使本公开的目的、技术方案和优点更加清楚明白，下文中将结合附图对本公开的实施例进行详细说明。需要说明的是，在下面的描述中 阐述了很多具体细节以便于充分理解本公开，但是，本公开还可以采用其他不同于在此描述的方式来实施，因此，本公开的保护范围并不受下面公开的具体实施例的限制。
图1显示了相关技术中的开口掩膜板的局部结构示意图。如图1所示的，开口掩膜板包括开口区域和限定开口区域的非开口区域，非开口区域包括实材保留部分和半刻蚀部分，半刻蚀部分直接形成在每个开口区域的四周。具有凸出膜层的玻璃基板设置在开口掩膜板的形成有半刻蚀部分的表面上。本公开的发明人发现，这样的设计，当通过喷嘴实施蒸镀喷洒时，会使得外阴影A较大，影响产品性能。
本公开实施例提供了一种开口掩膜板。该开口掩膜板包括：呈阵列方式布置的多个单元，每个单元包括开口区域和非开口区域，所述非开口区域包括半刻蚀部分和实材保留部分，其中：在所述多个单元的至少一个单元中，所述实材保留部分位于该单元的开口区域四周，所述半刻蚀部分通过所述实材保留部分与所述开口区域隔离开。还提供了一种包括前述开口掩膜板的开口掩膜板组件，以及一种使用前述开口掩膜板的蒸镀方法。
请参考图2和图3，图2为本公开实施例提供的开口掩膜板的局部结构示意图；图3为本公开实施例提供的开口掩膜板的局部俯视图。本公开实施例提供的开口掩膜板，包括呈阵列方式布置的多个单元(在图示实施例中以两个相邻单元100a和100b为例)，每个单元100a或110b包括开口区域301和非开口区域201、202。非开口区域包括半刻蚀部分201和实材保留部分202。在至少一个单元(如图示实施例中的两个相邻单元100a和100b)中，实材保留部分202位于该单元100a或110b的开口区域301四周，并且半刻蚀部分201通过实材保留部分202与开口区域301隔离开。
需要注意的是，虽然在图2和图3所示的实施例中仅显示了两个相邻单元100a和100b，但是公开实施例提供的开口掩膜板由多个具有上述构造的单元呈阵列方式布置而成。例如，图3示例性地表示出了其中两个相邻的单元100a和100b，每个单元100a或100b具有一个开口区域301，每个开口区域301被实材保留部分202包围，而实材保留部分 202又被半刻蚀部分201包围。
相关技术中，在使用开口掩膜板进行蒸镀时，需要用喷嘴喷洒蒸镀材料，由于喷嘴喷洒时液体呈一定角度喷洒，所以会出现外阴影。本公开实施例中，开口区域边缘的实材保留部分可用于阻挡外阴影，在相同的蒸镀条件(如温度，角度)下，B值必然小于A值。例如，图2中，外阴影的宽度为B，可以看出，远小于图1中外阴影的宽度A，A值为200um左右。
对于如图1所示的开口掩膜板，在实际的蒸镀结果中发现，除去理论计算的A值为外阴影，在基板上还发现大于A值以外的区域仍然存在部分金属粒子。对于该现象，一般推理是：由于半刻区域在基板接触面，金属粒子除了按照固定角度附着在基板上外，仍有小部分金属由于自由移动“飘散”到A以外的区域，如图1所示的设计的半刻蚀部分刚好为其“飘散”提供了空间。
对于如图2所示的开口掩膜板，在开口区域周围为一定宽度的实材保留部分，用于阻挡金属粒子的“飘散”现象，同时从角度上计算，外阴影的B值也远小于A值。本公开实施例提供的开口掩膜板，由于实材保留部分位于开口区域四周，使得在蒸镀喷淋时，蒸镀材料无法经由实材保留部分进入半蚀刻部分，因此蒸镀材料进入开口掩膜板覆盖区域的面积更小，从而减小开口掩膜板的外阴影效应。
在示例性实施例中，如图2所示，在非开口区域，两个相邻单元100a和100b的实材保留部分202之间，全部为半刻蚀部分201。也就是说，两个相邻单元100a和100b的实材保留部分202之间，一个单元100a的半蚀刻部分201和与该单元100a相邻的另一个单元100b的半蚀刻部分201相接。
实材保留部分202的数量尽可能少，可以减少工艺难度，同时，实材保留部分202数量尽可能的少，并且，实材保留部分202的宽度尽可能的小，可以使得开口掩膜板的重量更小，从而在张网时可有效改善开口掩膜板的下垂量，即平坦度(Flatness)提升。提升平坦度可进一步确保在蒸镀工艺中开口掩膜板与基板的贴合紧密度，进一步确保整面的阴影减小。
一般情况下，对于如图1所示的开口掩膜板，其平坦度为约350um。对于如图2所示的开口掩膜板，其平坦度能够达到约250um。
通常情况下，开口掩膜板的整体厚度为约145-155um，其中开口掩膜板的整体厚度为约150um较常见，其实材保留部分202厚度与开口掩膜板的整体厚度相同，同样为约145-155um。例如，图2中标示的H1即为实材保留部分202的厚度。
半刻蚀部分201的存在主要为了避开凸出膜层204，一般半刻蚀部分201只要刻蚀掉约10um，即可达到避开凸出膜层204的目的，所以，开口掩膜板的实材保留部分202的厚度减去开口掩膜板的半刻蚀部分201的厚度的差值至少为约10um。在实材保留部分202的厚度为约150um时，开口掩膜板的半刻蚀部分201的厚度小于约140um，图2中标示的H2即为半刻蚀部分201的厚度。
通常来讲，为了工艺制作上的方便，开口掩膜板的半刻蚀部分厚度一般为约70-80um。
开口掩膜板的实材保留部分202的宽度越小，开口掩膜板的重量越轻，越有利于提升开口掩膜板整面的平坦度，为降低开口掩膜板制作的工艺难度，一般情况下，开口掩膜板的实材保留部分202的宽度大于或等于约0.5mm。例如，图2中标示的D1即为实材保留部分202的宽度。
通常情况下，每个单元的半蚀刻部分和与该单元相邻的单元的半蚀刻部分的宽度之和大于或等于约0.5mm。例如，图2中标示的D2即为半刻蚀部分201的宽度。
根据本公开实施例，还提供一种开口掩膜板组件。如图2所示，开口掩膜板组件包括：具有凸出膜层204的基板203；和如前所述的开口掩膜板。如图2所示，凸出膜层204位于开口掩膜板的半蚀刻部分201中。这样，半刻蚀部分用于避开基板上的凸出膜层，避免开口掩膜板与凸出膜层挤压或者摩擦，造成膜层结构损坏及造成颗粒化。
如图1所示和如图2所示的两种设计，对于基板上凸出膜层皆在开口掩膜板上相应位置进行半刻蚀。基板上凸出膜层通常是用于OLED器件封装时形成壁垒，所以应该保证其完整性。相应区域的半刻蚀，可有效避免凸出膜层与开口掩膜板造成挤压和摩擦，造成壁垒被破坏。
在实际应用中，在非开口区域，除了开口区域四周的实材保留部分外，两个相邻单元的实材保留部分之间也可以存在其它实材保留部分，只要在凸出膜层处进行半刻蚀形成半刻蚀部分即可。
根据本公开实施例，还提供一种使用如前所述的开口掩膜板的蒸镀方法。该蒸镀方法包括：提供如前所述的开口掩膜板；在开口掩膜板上设置具有凸出膜层的基板，其中，凸出膜层位于开口掩膜板的半蚀刻部分中；以及，通过喷嘴对开口掩膜板的开口区域实施蒸镀。在示例性实施例中，如图2所示，喷嘴400被设置成：喷洒的最大角度为和与开口掩膜板平行的水平面呈大致53度。本公开实施例提供的蒸镀方法，由于开口掩膜板实材保留部分位于开口区域四周，使得在蒸镀喷淋时，蒸镀材料无法经由实材保留部分进入半蚀刻部分，因此蒸镀材料进入开口掩膜板覆盖区域的面积更小，从而减小开口掩膜板的外阴影效应。
以上描述仅为本公开的示例性实施例。本领域技术人员应当理解，本公开的保护范围，并不限于上述技术特征的特定组合而成的技术方案，同时也应涵盖在不脱离本公开发明构思的情况下，由上述技术特征或其等同特征进行任意组合而形成的其它技术方案。例如上述特征与本公开中描述的(但不限于)具有类似功能的技术特征进行互相替换而形成的技术方案。

Claims (10)

  1. 一种开口掩膜板，包括：
    呈阵列方式布置的多个单元，每个单元包括开口区域和非开口区域，所述非开口区域包括半刻蚀部分和实材保留部分，其中：
    在所述多个单元的至少一个单元中，所述实材保留部分位于该单元的开口区域四周，所述半刻蚀部分通过所述实材保留部分与所述开口区域隔离开。
  2. 如权利要求1所述的开口掩膜板，其中，每个单元的半蚀刻部分和与该单元相邻的单元的半蚀刻部分相接。
  3. 如权利要求1所述的开口掩膜板，其中，所述实材保留部分的厚度为约145-155um。
  4. 如权利要求3所述的开口掩膜板，其中，所述实材保留部分的厚度减去所述半刻蚀部分的厚度的差值至少为约10um。
  5. 如权利要求3所述的开口掩膜板，其中，所述半刻蚀部分的厚度为约70-80um。
  6. 如权利要求1所述的开口掩膜板，其中，所述实材保留部分的宽度大于或等于约0.5mm。
  7. 如权利要求2所述的开口掩膜板，其中，每个单元的半蚀刻部分和与该单元相邻的单元的半蚀刻部分的宽度之和大于或等于约0.5mm。
  8. 一种开口掩膜板组件，包括：
    基板，所述基板具有凸出膜层；和
    如权利要求1-7中任一所述的开口掩膜板；
    其中，所述凸出膜层位于所述开口掩膜板的所述半蚀刻部分中。
  9. 一种使用如权利要求1-7中任一所述的开口掩膜板的蒸镀方法，包括：
    提供所述开口掩膜板；
    在所述开口掩膜板上设置具有凸出膜层的基板，其中，所述凸出膜层位于所述开口掩膜板的所述半蚀刻部分中；以及
    通过喷嘴对所述开口掩膜板的开口区域实施蒸镀。
  10. 如权利要求9所述的蒸镀方法，其中，所述喷嘴被设置成：喷洒的最大角度为和与所述开口掩膜板平行的水平面呈大致53度。
PCT/CN2019/103309 2018-10-15 2019-08-29 开口掩膜板、开口掩膜板组件、和使用该开口掩膜板的蒸镀方法 WO2020078112A1 (zh)

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