WO2020059315A1 - 膜形成方法および膜形成装置 - Google Patents

膜形成方法および膜形成装置 Download PDF

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Publication number
WO2020059315A1
WO2020059315A1 PCT/JP2019/030238 JP2019030238W WO2020059315A1 WO 2020059315 A1 WO2020059315 A1 WO 2020059315A1 JP 2019030238 W JP2019030238 W JP 2019030238W WO 2020059315 A1 WO2020059315 A1 WO 2020059315A1
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Prior art keywords
substrate
solvent
liquid film
film
liquid
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PCT/JP2019/030238
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English (en)
French (fr)
Japanese (ja)
Inventor
雄大 和食
金岡　雅
山田　芳久
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株式会社Ｓｃｒｅｅｎホールディングス
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Publication of WO2020059315A1 publication Critical patent/WO2020059315A1/ja

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C9/00—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important
    • B05C9/06—Apparatus or plant for applying liquid or other fluent material to surfaces by means not covered by any preceding group, or in which the means of applying the liquid or other fluent material is not important for applying two different liquids or other fluent materials, or the same liquid or other fluent material twice, to the same side of the work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34

Definitions

  • the present invention relates to a film forming method and a film forming apparatus for forming a photosensitive film on a substrate.
  • a resist solution is supplied to one surface of a substrate to form a resist film.
  • the resist film formed on the substrate is exposed to a predetermined pattern by an exposure device.
  • Patent Document 1 A resist coating apparatus for performing pre-wetting is described in Patent Document 1.
  • a liquid mixture of a resist-soluble solvent and a solvent having a high surface tension is supplied to the substrate as a pre-wet liquid in a pre-wet process.
  • the resist liquid is supplied to the substrate after the supply of the pre-wet liquid, and a resist film is formed.
  • An object of the present invention is to provide a film forming method and a film forming apparatus which can form a photosensitive film on one surface of a substrate with high precision and can reduce the manufacturing cost of the substrate.
  • a first liquid film containing a first solvent is formed on one surface of a substrate, and a surface higher than the first solvent is formed on the first liquid film.
  • the first solvent is propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, or a mixed solvent of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether.
  • Propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, and a mixed solvent of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether are less expensive than solvents having a higher surface tension than these solvents.
  • a first liquid film, a second liquid film, and a photosensitive film are formed on one surface of the substrate in this order.
  • contaminants adhering to one surface of the substrate can be removed using an inexpensive first solvent. Therefore, it is possible to keep one surface of the substrate clean immediately before the photosensitive film is formed.
  • the second solvent spreads smoothly and uniformly on the first liquid film when the second liquid film is formed. Accordingly, compared with a case where the second solvent is directly supplied to one surface of the substrate to form a second liquid film on one surface of the substrate, a second liquid film necessary for covering the entire surface of the substrate with the second liquid film is provided. 2, the amount of the solvent can be reduced. Therefore, an increase in the cost of substrate processing due to the use of a large amount of the second solvent which is more expensive than the first solvent is suppressed.
  • the second solvent has a higher surface tension than the first solvent.
  • a liquid film having a high surface tension is more likely to adsorb other liquids than a liquid film having a low surface tension. Therefore, when the photosensitive material is supplied on the second liquid film, the supplied photosensitive material is compared with the case where the photosensitive material is supplied on the first liquid film. Spreads more smoothly and uniformly on the liquid film. Therefore, the amount of the photosensitive material required for forming the photosensitive film can be reduced.
  • the second solvent may include at least one solvent selected from cyclohexanone, ⁇ -butyrolactone, and N-methyl-2-pyrrolidone.
  • the photosensitive film can be formed with high efficiency by using the second solvent.
  • the substrate is held using a holding unit configured to be able to hold the substrate in a horizontal posture and to be able to rotate the held substrate around a rotation axis extending in a vertical direction.
  • the step of forming the photosensitive film which includes supplying a second solvent to the liquid film, includes the step of forming a photosensitive material on the second liquid film while the substrate is held by the holding portion and rotated around the rotation axis. May be provided.
  • the first solvent is supplied to one surface of the substrate to be rotated, so that the first liquid film can be formed easily and in a short time. Further, by supplying the second solvent onto the first liquid film, the second liquid film can be formed easily and in a short time. Further, by supplying the photosensitive material on the second liquid film, the photosensitive film can be easily and quickly formed on one surface of the substrate. Thereby, the manufacturing cost of the substrate is further reduced.
  • a film forming apparatus includes a first liquid film forming unit that forms a first liquid film containing a first solvent on one surface of a substrate, and a first liquid film forming unit that forms a first liquid film on the first liquid film.
  • a second liquid film forming section for forming a second liquid film including a second solvent having a higher surface tension than the first solvent, and a photosensitive material on the second liquid film to form a second liquid film on the substrate;
  • a photosensitive film forming portion for forming a photosensitive film on one side, the first solvent is propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether, or a mixed solvent of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether. is there.
  • a first liquid film, a second liquid film, and a photosensitive film are formed on one surface of the substrate in this order.
  • contaminants adhering to one surface of the substrate can be removed using an inexpensive first solvent. Therefore, it is possible to keep one surface of the substrate clean immediately before the photosensitive film is formed.
  • the second solvent spreads smoothly and uniformly on the first liquid film when the second liquid film is formed. Accordingly, compared with a case where the second solvent is directly supplied to one surface of the substrate to form a second liquid film on one surface of the substrate, a second liquid film necessary for covering the entire surface of the substrate with the second liquid film is provided. 2, the amount of the solvent can be reduced. Therefore, an increase in the cost of substrate processing due to the use of a large amount of the second solvent which is more expensive than the first solvent is suppressed.
  • the second solvent has a higher surface tension than the first solvent.
  • a liquid film having a high surface tension is more likely to adsorb other liquids than a liquid film having a low surface tension. Therefore, when the photosensitive material is supplied on the second liquid film, the supplied photosensitive material is compared with the case where the photosensitive material is supplied on the first liquid film. Spreads more smoothly and uniformly on the liquid film. Therefore, the amount of the photosensitive material required for forming the photosensitive film can be reduced.
  • the second solvent may contain at least one kind of solvent among cyclohexanone, ⁇ -butyrolactone and N-methyl-2-pyrrolidone.
  • the photosensitive film can be formed with high efficiency by using the second solvent.
  • the film forming apparatus further includes a holding unit capable of holding the substrate in a horizontal position and rotating the held substrate around a rotation axis extending in a vertical direction
  • the first liquid film forming unit includes: The first solvent is supplied to one surface of the substrate in a state where the substrate is held by the holding unit and rotates around the rotation axis, and the second liquid film forming unit causes the substrate to be held by the holding unit and rotates around the rotation axis.
  • the first solvent is supplied to one surface of the substrate to be rotated, so that the first liquid film can be formed easily and in a short time. Further, by supplying the second solvent onto the first liquid film, the second liquid film can be formed easily and in a short time. Further, by supplying the photosensitive material on the second liquid film, the photosensitive film can be easily and quickly formed on one surface of the substrate. Thereby, the manufacturing cost of the substrate is further reduced.
  • the present invention it is possible to form a photosensitive film on one surface of a substrate with high accuracy and to reduce the manufacturing cost of the substrate.
  • FIG. 1 is a diagram showing a basic configuration of a film forming apparatus according to one embodiment of the present invention.
  • FIG. 2 is a view for explaining a first example of a method of forming a resist film.
  • FIG. 3 is a view for explaining a second example of the method of forming a resist film.
  • FIG. 4 is a view for explaining a third example of a method for forming a resist film.
  • FIG. 5 is a view for explaining a fourth example of the method of forming a resist film.
  • FIG. 6 is a schematic block diagram showing the entire configuration of a substrate processing apparatus provided with the film forming apparatus of FIG.
  • substrate refers to a semiconductor substrate, a flat panel display (FPD) substrate such as a liquid crystal display device or an organic EL (Electro Luminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, Photomask substrate, ceramic substrate, solar cell substrate, and the like.
  • FPD flat panel display
  • organic EL Electro Luminescence
  • FIG. 1 is a diagram showing a basic configuration of a film forming apparatus according to an embodiment of the present invention.
  • FIG. 1 is a schematic plan view showing a configuration of a main part of the film forming apparatus 1.
  • the film forming apparatus 1 mainly includes a film forming apparatus 1, a first nozzle transfer device 10, a plurality (three in this example) of spin chucks 20, and a plurality (three in this example) of cups. 21, a plurality of second nozzle transfer devices 30, a resist solution supply system 40, a first solvent supply system 50, a second solvent supply system 60, and a control unit 70.
  • X direction means the direction of arrow X in FIG. 1 or its opposite direction
  • Y direction means the direction of arrow Y in FIG. 1 or its opposite direction
  • Z direction means the direction of arrow Y in FIG. It means the opposite direction.
  • three spin chucks 20 are provided so as to be arranged at intervals in the Y direction.
  • the three cups 21 are provided so as to surround the three spin chucks 20, respectively.
  • the first nozzle transfer device 10 is provided beside the three spin chucks 20.
  • the first nozzle transfer device 10 has a pedestal portion 19 extending in the Y direction so as to be adjacent to the three spin chucks 20.
  • the pedestal portion 19 is provided with a linear guide 18 extending linearly in the longitudinal direction.
  • the movable support 12 is provided movably in the Y direction along the linear guide 18.
  • the movement support section 12 supports the standby pot 11.
  • a plurality of (six in this example) resist nozzles n0 are inserted into the standby pot 11.
  • a pipe extending from the resist liquid supply system 40 is connected to each resist nozzle n0.
  • the resist liquid supply system 40 can supply a resist liquid to each resist nozzle n0.
  • the movement support section 12 further supports the arm 13 so as to be movable in the Y direction.
  • the arm 13 extends in the X direction from a position above the standby pot 11 to a position above the one spin chuck 20 in a state where the movement support portion 12 is adjacent to the one spin chuck 20.
  • the arm 13 is provided with a nozzle grip 14 that is movable in the X direction.
  • the nozzle gripper 14 is configured to be able to grip the resist nozzle n0.
  • the first nozzle transfer device 10 includes a drive unit (not shown) for moving the movement support unit 12 in the Y direction, a drive unit (not shown) for moving the arm 13 in the Y direction, and a drive (not shown) for moving the nozzle gripper 14 in the X direction. A part.
  • these drive units operate under the control of the control unit 70, one of the plurality of resist nozzles n0 is moved between the standby pot 11 and a position above any of the three spin chucks 20. Can be moved.
  • the resist liquid can be supplied from the resist nozzle n0 to the central portion of the substrate W in a state where the resist nozzle n0 is disposed at a position above the substrate W held by one spin chuck 20. .
  • a second nozzle transfer device 30 is provided near each of the plurality of spin chucks 20.
  • Each second nozzle transfer device 30 includes a support column 31 and an arm 32.
  • the support column 31 is provided to extend in the Z direction, and supports one end of an arm 32 extending in the horizontal direction so as to be rotatable in a horizontal plane and to be able to move up and down in the Z direction.
  • Pre-wet nozzles n1 and n2 and edge rinse nozzle n3 are attached to the other end of arm 32.
  • a pipe extending from the first solvent supply system 50 is connected to the pre-wet nozzle n1.
  • the first solvent supply system 50 supplies the first solvent to the pre-wet nozzle n1.
  • a pipe extending from the second solvent supply system 60 is connected to the pre-wet nozzle n2.
  • the second solvent supply system 60 supplies the second solvent to the pre-wet nozzle n2.
  • a pipe extending from an edge rinse supply system (not shown) is connected to the edge rinse nozzle n3.
  • the edge rinse supply system supplies an edge rinse liquid to the edge rinse nozzle n3.
  • the first solvent is propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), or a mixed solvent of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether.
  • the second solvent is a solvent having a higher surface tension than the first solvent.
  • the second solvent for example, cyclohexanone, ⁇ -butyrolactone or N-methyl-2-pyrrolidone is used.
  • the first solvent is less expensive than the second solvent.
  • the first solvent is used as the edge rinse liquid. Note that a second solvent may be used instead of the first solvent as the edge rinse liquid.
  • the second nozzle transfer device 30 further includes a drive unit (not shown) for moving the arm 32 up and down and a drive unit (not shown) for rotating the arm 32.
  • a drive unit for moving the arm 32 up and down
  • a drive unit for rotating the arm 32.
  • the control unit 70 includes, for example, a CPU (Central Processing Unit) and a memory or a microcomputer, and controls the operation of each unit constituting the film forming apparatus 1 as described above. Thus, the following film forming process is performed on the substrate W carried into the film forming apparatus 1.
  • a CPU Central Processing Unit
  • a memory or a microcomputer controls the operation of each unit constituting the film forming apparatus 1 as described above. Thus, the following film forming process is performed on the substrate W carried into the film forming apparatus 1.
  • the first solvent is supplied to the upper surface of the substrate W held by the spin chuck 20 from the pre-wet nozzle n1.
  • a first liquid film containing the first solvent is formed on the upper surface of the substrate W.
  • contaminants such as particles adhering to the upper surface of the substrate W can be removed using an inexpensive first solvent.
  • a second solvent is supplied from the pre-wet nozzle n2 to the upper surface of the substrate W on which the first liquid film has been formed.
  • the second solvent spreads smoothly and uniformly on the first liquid film. Accordingly, compared to a case where the second solvent is directly supplied to the upper surface of the substrate W on which the first liquid film is not formed to form the second liquid film, the entire upper surface of the substrate W is formed by the second liquid. The amount of the second solvent required for covering with the film can be reduced.
  • a resist liquid is supplied from the resist nozzle n0 to the upper surface of the substrate W on which the second liquid film has been formed.
  • the second solvent has a higher surface tension than the first solvent.
  • a liquid film having a high surface tension is more likely to adsorb other liquids than a liquid film having a low surface tension. Therefore, when the resist liquid is supplied on the second liquid film, the supplied resist liquid is supplied on the second liquid film as compared with the case where the resist liquid is supplied on the first liquid film. Spreads more smoothly and evenly. Therefore, the amount of the resist solution required for forming the resist film can be reduced.
  • the first liquid film, the second liquid film, and the resist liquid are sequentially supplied to the upper surface of the substrate W, and the substrate W is rotated by the spin chuck 20 so that the entire region of the upper surface of the substrate W has a uniform thickness.
  • a resist film is formed.
  • the edge rinse liquid is supplied from the edge rinse nozzle n3 to the peripheral edge of the upper surface of the substrate W rotated by the spin chuck 20.
  • the portion of the resist film formed on the upper surface of the substrate W, which is located at the peripheral portion of the upper surface of the substrate W, is dissolved and removed by the edge rinse liquid.
  • a series of processing (film forming processing) in the film forming apparatus 1 ends.
  • the substrate W after the film forming process is carried out of the film forming apparatus 1 and is transported to another device for performing a subsequent process.
  • the first liquid film, the second liquid film, and the resist film are formed in this order on the upper surface of the substrate W held by the spin chuck 20. You.
  • the resist solution is soluble in the first and second solvents. Therefore, finally, the first and second liquid film layers do not remain on the upper surface of the substrate W, and only one resist film is formed.
  • a specific example of a method for forming a resist film using the first solvent, the second solvent, and the resist solution will be described.
  • FIG. 2 is a diagram for explaining a first example of a method for forming a resist film.
  • FIGS. 2A to 2G show the supply states of various liquids on the upper surface of the substrate W in chronological order in a plan view.
  • FIGS. 2H to 2N show side views of the substrate W corresponding to FIGS. 2A to 2G, respectively.
  • 2A to 2G the substrate W in a rotating state is indicated by a thick solid arrow.
  • the substrate W is suction-held by the spin chuck 20, and the substrate W is rotated by the spin chuck 20.
  • the first solvent is supplied toward the center of the upper surface of the rotating substrate W to form the first liquid film f1.
  • the first liquid film f1 spreads over the entire upper surface of the substrate W as shown in FIGS. 2C and 2J.
  • the second solvent is supplied toward the center of the upper surface of the rotating substrate W, and the second liquid film f2 is formed on the first liquid film f1. Is formed.
  • a small amount of the second solvent is supplied, as shown in FIGS. 2 (e) and (l).
  • the second liquid film f2 spreads smoothly and uniformly over the entire upper surface of W.
  • a resist liquid is supplied toward the center of the upper surface of the rotating substrate W, and a resist film f3 is formed on the second liquid film f2.
  • a small amount of the resist liquid is supplied while the substrate W is rotated, so that FIGS.
  • the resist film f3 spreads smoothly and uniformly over the entire upper surface of the substrate W.
  • the resist solution is soluble in the first and second solvents. Therefore, finally, the first liquid film f1 and the second liquid film f2 do not remain on the upper surface of the substrate W.
  • FIG. 3 is a diagram for explaining a second example of a method for forming a resist film.
  • FIGS. 3A to 3G show the supply states of various liquids on the upper surface of the substrate W in chronological order in a plan view.
  • 3 (h) to 3 (n) show side views of the substrate W corresponding to FIGS. 3 (a) to 3 (g), respectively.
  • 3A to 3G the substrate W in a rotating state is indicated by a thick solid line arrow.
  • the substrate W is sucked and held on the spin chuck 20, and the substrate W is rotated by the spin chuck 20 (FIGS. 3A and 3H). Further, the first solvent is supplied to the rotating substrate W (FIGS. 3B and 3I), and a first liquid film f1 is formed on the entire upper surface of the substrate W (FIGS. 3C and 3C). j)).
  • the rotation of the substrate W is stopped, and a predetermined amount of the second solvent is supplied toward the center of the upper surface of the substrate W.
  • the second liquid film f2 is formed at the center of the upper surface of the substrate W. The formed second liquid film f2 spreads from the central portion of the upper surface of the substrate W toward the outer peripheral portion of the substrate W.
  • a predetermined amount of resist liquid is formed on the second liquid film f2. Is supplied.
  • a resist film f3 is formed at the center of the upper surface of the substrate W.
  • the second liquid film f2 and the resist film f3 are moved from the central portion of the upper surface of the substrate W to the outer peripheral portion of the substrate W, as shown in FIGS. Spread.
  • a resist film f3 is formed smoothly and uniformly on the entire upper surface of the substrate W as shown in FIGS. 3 (g) and 3 (n).
  • the first liquid film f1 and the second liquid film f2 do not remain on the upper surface of the substrate W.
  • FIG. 4 is a diagram for explaining a third example of a method for forming a resist film.
  • FIGS. 4A to 4G show the supply states of various liquids on the upper surface of the substrate W in chronological order in a plan view.
  • FIGS. 4H to 4N show side views of the substrate W corresponding to FIGS. 4A to 4G, respectively. 4A to 4G, the substrate W in a rotating state is indicated by a thick solid line arrow.
  • the substrate W is suction-held on the spin chuck 20. At this point, the rotation of the substrate W has been stopped.
  • a predetermined amount of the first solvent is supplied toward the center of the upper surface of the substrate W in a state where the rotation is stopped, and the substrate W A first liquid film f1 is formed at the center of the upper surface of the liquid crystal display.
  • the formed first liquid film f1 gradually spreads from the central portion of the upper surface of the substrate W toward the outer peripheral portion of the substrate W.
  • a predetermined amount of the second solvent is deposited on the first liquid film f1.
  • the second liquid film f2 is supplied and formed at the center of the upper surface of the substrate W.
  • the substrate W is rotated by the spin chuck 20.
  • the first liquid film f1 and the second liquid film f2 are formed from the center of the upper surface of the substrate W to the substrate W as shown in FIGS. 4D, 4E, 4K, and 4L. Spreads in a short time toward the outer periphery.
  • a resist liquid is supplied toward the center of the upper surface of the rotating substrate W.
  • a resist film f3 is formed on the second liquid film f2.
  • the resist film f3 spreads smoothly and uniformly over the entire upper surface of the substrate W as shown in FIGS.
  • the first liquid film f1 and the second liquid film f2 do not remain on the upper surface of the substrate W.
  • the speed (rotation speed) of the substrate W to be rotated is kept constant. Good or may fluctuate.
  • the rotation speed of the substrate W may fluctuate within a certain speed range (for example, 0 rpm to 100 rpm).
  • FIG. 5 is a diagram for explaining a fourth example of a method for forming a resist film.
  • FIGS. 5A to 5G show the supply states of various liquids on the upper surface of the substrate W in chronological order in a plan view.
  • FIGS. 5H to 5N show side views of the substrate W corresponding to FIGS. 5A to 5G, respectively.
  • the first solvent and the second solvent are sequentially supplied toward the center of the upper surface of the substrate W that is sucked and held by the spin chuck 20 and does not rotate (FIG. 5). (A) to (c), (h) to (j)).
  • the rotation of the substrate W is started, and the substrate W is continuously rotated.
  • the first liquid film f1, the second liquid film f2, and the resist film f3 are respectively formed on the entire upper surface of the substrate W as shown in FIGS. 5 (e) to 5 (g) and 5 (l) to 5 (n).
  • the first liquid film f1 and the second liquid film f2 do not remain on the upper surface of the substrate W.
  • the second solvent spreads smoothly and uniformly on the first liquid film f1. Thereby, it is not necessary to use a large amount of the second solvent.
  • the inventor prepared four unprocessed substrates W and four solvents used for pre-wetting.
  • the four solvents are cyclohexanone (hereinafter, referred to as solvent A), ⁇ -butyrolactone (hereinafter, referred to as solvent B), propylene glycol monomethyl ether acetate (hereinafter, referred to as solvent C), and propylene glycol monomethyl ether acetate.
  • solvent A cyclohexanone
  • solvent B ⁇ -butyrolactone
  • solvent C propylene glycol monomethyl ether acetate
  • solvent D propylene glycol monomethyl ether
  • the mixing ratio of propylene glycol monomethyl ether acetate and propylene glycol monomethyl ether in solvent D is 3: 7.
  • the surface tension of solvent A was 35.2 mN / m
  • the surface tension of solvent B was 43 mN / m
  • the surface tension of solvent C was 28 mN / m
  • the surface tension of solvent D was 27.7 mN / m. is there.
  • propylene glycol monomethyl ether and N-methyl-2-pyrrolidone have a surface tension of 27.7 mN / m and 41 mN / m, respectively. Therefore, it can be seen that propylene glycol monomethyl ether can be suitably used as the first solvent, and N-methyl-2-pyrrolidone can be suitably used as the second solvent.
  • FIG. 6 is a schematic block diagram showing the overall configuration of the substrate processing apparatus including the film forming apparatus 1 of FIG.
  • the substrate processing apparatus 100 is provided adjacent to the exposure apparatus 500, and includes a control device 110, a transfer device 120, a coating processing unit 130, a developing processing unit 140, and a heat treatment unit 150.
  • the control device 110 includes, for example, a CPU and a memory, or a microcomputer, and controls operations of the transport device 120, the coating processing unit 130, the development processing unit 140, and the heat treatment unit 150.
  • the transfer device 120 transfers the substrate W among the coating processing unit 130, the development processing unit 140, the heat treatment unit 150, the substrate inspection device 200, and the exposure device 500.
  • the coating processing unit 130 includes a plurality of film forming apparatuses 1.
  • each film forming apparatus 1 the film forming process of forming the resist film f3 on the upper surface of the substrate W using the first and second solvents is performed as described above.
  • the exposure apparatus 500 performs exposure processing on the substrate W after the coating processing on which the resist film f3 is formed.
  • the development processing unit 140 performs a development process on the substrate W by supplying a developer to the substrate W after the exposure process performed by the exposure device 500.
  • the heat treatment unit 150 performs heat treatment on the substrate W before and after the film forming process of the coating processing unit 130 by the film forming apparatus 1, the development process by the development processing unit 140, and the exposure process by the exposure device 500.
  • an anti-reflection film may be formed on the substrate W.
  • the heat treatment unit 150 may perform an adhesion strengthening process for improving the adhesion between the substrate W and the antireflection film.
  • a resist cover film for protecting the resist film f3 may be formed on the substrate W on which the resist film f3 is formed.
  • the coating processing section 130 is provided with the film forming apparatus 1 of FIG.
  • the film forming apparatus 1 of FIG. it is possible to form the resist film f3 on the upper surface of the substrate W with high accuracy. Further, since the cost required for forming the resist film f3 is reduced, the manufacturing cost of the substrate W is reduced.
  • cyclohexanone, ⁇ -butyrolactone or N-methyl-2-pyrrolidone is used as the second solvent, but the present invention is not limited to this.
  • a mixed solvent containing at least one solvent selected from cyclohexanone, ⁇ -butyrolactone, and N-methyl-2-pyrrolidone may be used.
  • the pre-wet nozzles n1 and n2 and the edge rinse nozzle n3 are attached to one common arm 32, but the present invention is not limited to this.
  • a plurality of nozzle transfer devices respectively corresponding to the pre-wet nozzles n1 and n2 and the edge rinse nozzle n3 may be provided.
  • the pre-wet nozzle n1, the second nozzle transport device 30, the first solvent supply system 50, and the control unit 70 are examples of the first liquid film forming unit
  • the pre-wet nozzle n2 the second The nozzle transfer device 30, the second solvent supply system 60, and the control unit 70 are examples of a second liquid film forming unit.
  • the resist nozzle n0, the first nozzle transfer device 10, the resist liquid supply system 40, and the control unit 70 are examples of a photosensitive film forming unit, and the spin chuck 20 is an example of a holding unit.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
PCT/JP2019/030238 2018-09-20 2019-08-01 膜形成方法および膜形成装置 WO2020059315A1 (ja)

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US11550223B2 (en) 2020-05-25 2023-01-10 Chongqing Konka Photoelectric Technology Research Institute Co., Ltd. Coating method and coating system

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