WO2020057264A1 - Photopile et procédé de préparation associé - Google Patents

Photopile et procédé de préparation associé Download PDF

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Publication number
WO2020057264A1
WO2020057264A1 PCT/CN2019/098440 CN2019098440W WO2020057264A1 WO 2020057264 A1 WO2020057264 A1 WO 2020057264A1 CN 2019098440 W CN2019098440 W CN 2019098440W WO 2020057264 A1 WO2020057264 A1 WO 2020057264A1
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Prior art keywords
silicon wafer
solar cell
solution
film
laser
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PCT/CN2019/098440
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English (en)
Chinese (zh)
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邵家俊
张小明
方结彬
林纲正
陈刚
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浙江爱旭太阳能科技有限公司
广东爱旭科技股份有限公司
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Publication of WO2020057264A1 publication Critical patent/WO2020057264A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to the field of crystalline silicon solar cells, in particular to a method for preparing a high-efficiency SE-PERC solar cell.
  • SE-PERC solar cell is one of the most popular high-efficiency cells on the market. It combines frontal laser heavy doping technology (SE) and local contact back passivation technology (PERC), which greatly improves the efficiency of solar cells.
  • SE-PERC solar cells include back electrode, back electric field, SiNx / Al 2 O 3 stack, P-type silicon, N ++ layer, N + layer, silicon oxide, silicon nitride, and positive electrode in order from bottom to top.
  • the N ++ layer passes the front laser.
  • One is the acid etching method, and the preparation process is: texturing-diffusion-front laser-acid etching polishing-de-PSG-annealing-back deposition Passivation film-deposition antireflection film-backside laser opening-back electrode, back electric field and positive electrode printing-firing annealing;
  • the other is alkaline etching method, its preparation process is: texturing-diffusion-front laser-go PSG on the back-Alkaline etching polishing on the back-PSG on the front-Annealing-Passivation film on the back-Antireflection film on the front-Laser aperture on the back-Back electrode, back electric field and positive electrode printing-firing annealing.
  • the method of etching polishing affects its efficiency; although the process of acid polishing is simple, its back reflectivity is low, the light transmission loss is large, and the conversion efficiency is low; The back reflectance has been improved, but the solar cell conversion efficiency has not been greatly improved, so it is necessary to improve the preparation method of the SE-PERC cell.
  • a technical problem to be solved by the present invention is to provide a method for preparing a solar cell, which can effectively improve the back reflectivity of a solar cell without affecting the frontal square resistance, and effectively improve the conversion efficiency of the solar cell.
  • a technical problem to be solved by the present invention is to provide a high-efficiency SE-PERC solar cell with high conversion efficiency.
  • the present invention provides a method for preparing a solar cell.
  • the method includes:
  • the method may further include:
  • step (12) The silicon wafer obtained in step (11) is fired at a high temperature to form a back electrode, an aluminum back electric field, and a positive electrode.
  • a high-efficiency SE-PERC solar cell can be manufactured.
  • the square resistance of the silicon wafer after phosphorus diffusion is 90-200 ⁇ / sq, especially 90-150 ⁇ / sq; in step (5), the square resistance of the silicon wafer heavily doped region
  • the undoped region has a square resistance value of 25-75 ⁇ / sq, particularly 25-45 ⁇ / sq.
  • the square resistance of the laser heavily doped region on the front surface of the silicon wafer after annealing is 60-100 ⁇ / sq, particularly 60-80 ⁇ / sq.
  • step (4) the weight of the silicon wafer is reduced to 0.3-0.5 g; the reflectivity of the back surface of the silicon wafer after polishing is 30-55%.
  • a HF solution is used to remove the phosphosilicate glass, and the mass concentration of the HF solution is 3-10%.
  • the passivation film is an Al 2 O 3 / SiN x film; its thickness is 110-150 nm.
  • the anti-reflection film is a silicon nitride film; its thickness is 65-80 nm; after the anti-reflection film is deposited, the front refractive index of the silicon wafer is 2-2.5.
  • the porosity is 3-10%.
  • the sintering temperature is 300-900 ° C.
  • the present invention also discloses a high-efficiency SE-PERC solar cell, which is prepared by using the above preparation method.
  • the invention is prepared through processes such as texturing, diffusion, back PSG removal, alkali polishing, front doping, PSG removal on the front, annealing, passivation film deposition, antireflection film deposition, back hole opening, electrode printing, and sintering annealing.
  • a high conversion efficiency SE-PERC solar cell is implemented; the beneficial effects of implementing the present invention are as follows:
  • the present invention effectively improves the reflectivity of the back surface of the solar cell through alkaline polishing on the back surface, which significantly reduces the long-wavelength transmittance, thereby reducing light transmission loss, increasing the current density Jsc, and thereby improving the conversion efficiency of the SE-PERC solar cell. .
  • the present invention effectively prevents the problem of rising square resistance caused by loosening of the surface phosphorus in the traditional alkali polishing process, and prevents poor and low silver-silicon contact after electrode printing Battery conversion efficiency issues.
  • the solar cell conversion efficiency can be improved to ⁇ 21.95%.
  • the invention provides a method for preparing a high-efficiency SE-PERC solar cell.
  • the method includes:
  • wet etching is used to form a suede on both sides of the silicon wafer. Specifically, 800 pcs of single crystal silicon wafer is taken. Wet etching is used to form a suede with an inverted pyramid structure.
  • the weight of the silicon wafer is reduced by 0.4-0.8g, preferably 0.5-0.7g; after texturing, the reflectivity of the silicon wafer is 9-13%, preferably 10-12%, and further preferably 9 -10%; Controlling the reflectivity of the silicon wafer after texturing is beneficial for controlling the solar cell's reflectivity to sunlight in the later stage, effectively increasing the solar cell's absorption of sunlight, and improving the solar cell's conversion efficiency.
  • the square resistance of the silicon wafer after diffusion is 90-200 ⁇ / sq, preferably 90-150 ⁇ / sq, and further preferably 120-150 ⁇ / sq;
  • the surface square resistance of the silicon wafer can reduce the surface doping concentration, which can not only improve the short-wave effect of the battery and increase the short-circuit current; but also reduce the dark saturation current caused by surface recombination and increase the open-circuit voltage; optimize battery performance.
  • the phosphosilicate glass on the back of the wafer can be removed by using HCl solution, HNO 3 solution or HF solution; preferably, the phosphosilicate glass on the back of the wafer is removed by HF solution; in some embodiments, the mass concentration of the HF solution is 3% -10%.
  • the HF solution can quickly remove the phosphosilicate glass on the back of the silicon wafer; preventing the reaction time from being too long and causing damage to the silicon wafer.
  • the back surface of the silicon wafer may be polished by using KOH or NaOH solution containing additives; in some embodiments, the back surface of the silicon wafer is polished in a polishing tank containing a KOH (containing additive) solution; further preferably, the quality of the KOH solution
  • the concentration is 5% -20%, and more preferably 10-20%.
  • KOH solution has strong alkalinity, and the polishing effect is more obvious.
  • the weight loss of the silicon wafer during polishing is 0.3-0.5 g; the reflectivity of the back surface of the silicon wafer after polishing is 30-55%, and more preferably 40-55%.
  • Alkali polishing can effectively improve the reflectivity on the back of the silicon wafer, significantly reducing the long-wavelength transmittance, thereby reducing light transmission loss, increasing the current density Jsc, and thereby improving the conversion efficiency of the SE-PERC solar cell.
  • the mixed solution of HF and HNO 3 is used to polish the back surface of the silicon wafer; however, the back reflectivity after polishing is low, generally lower than 30. %; Reduces the absorption of sunlight, reduces the current density, and reduces the conversion efficiency of solar cells.
  • the invention adopts a KOH solution containing additives for polishing, which can effectively improve the reflectivity of the back surface of the solar cell.
  • Tier laser is used for front-side doping; laser doping increases the doping concentration of the electrode region; reduces the ohmic contact between the silver paste and the silicon wafer, thereby increasing the fill factor; and improving the performance of the solar cell.
  • the difference between the square resistance of the heavily doped region and the undoped region of the silicon wafer is 25-75 ⁇ / sq, preferably 25-45 ⁇ / sq, and more preferably 30- 45 ⁇ / sq; the square resistance of the heavily doped electrode region can improve the solar cell conversion efficiency within this range.
  • the method for manufacturing a solar cell of the present disclosure may further include the following steps.
  • the phosphosilicate glass on the front side of the wafer can be removed by using HCl solution, HNO 3 solution or HF solution; in some embodiments, the phosphosilicate glass on the front side of the wafer is removed by HF solution; the mass concentration of the HF solution is 3% -10%.
  • the HF solution can quickly remove the phosphosilicate glass on the front surface of the silicon wafer; it prevents the wafer from being damaged due to the long reaction time.
  • laser heavy doping uses phosphorus-silicon glass produced during the phosphorus diffusion process as a doping source, and the phosphorus in the phosphorus-silica glass layer is advanced to the depth of the silicon wafer by laser irradiation to form a heavy doping.
  • Miscellaneous region that is, laser re-doping directly after phosphorus doping can ensure a higher concentration of the doping source, which can minimize the square resistance of the heavily doped region, improve the ohmic contact between the electrode and the substrate, and improve Solar cell conversion efficiency.
  • the present invention adopts a completely different technical route.
  • the process of removing phosphorous silicon glass on the back surface and polishing the back surface is carried out; then, the front surface is heavily doped with laser; Glass, which reduces the phosphorus source during the laser heavy doping process, is not good for improving the conversion efficiency of solar cells.
  • the present invention overcomes this prejudice through research.
  • the square resistance of the laser heavily doped region on the front side of the silicon wafer is 60-100 ⁇ / sq, particularly 60-80 ⁇ / sq;
  • the polishing process is placed before the laser heavy doping process, which effectively prevents the problem of loose phosphorus on the surface of the laser heavily doped region during the traditional alkaline polishing process; it ensures the low square resistance of the heavily doped region; thereby improving ohmic contact; The conversion efficiency of solar cells.
  • annealing is performed using hot oxygen; in some embodiments, the temperature after annealing is controlled at 500-800 ° C; preferably 500-600 ° C.
  • the annealing process can effectively oxidize the silicon wafer and play a role of passivation, which can reduce the junction region recombination, increase the open circuit voltage, and improve the product yield.
  • the passivation film is an Al 2 O 3 / SiN x film; the passivation film may be deposited using PECVD; in some embodiments, the deposition thickness is 110-150 nm.
  • the passivation film can effectively reduce the back surface of the silicon wafer, increase the open circuit voltage, and improve the conversion efficiency of the solar cell.
  • the anti-reflection film is a silicon nitride film; the anti-reflection film can be deposited by a PECVD method; in some embodiments, the thickness is 65-80 nm; the front side of the silicon wafer is refracted after the anti-reflection film is deposited The rate is 2-2.5; the front anti-reflection film can effectively improve the solar energy absorption rate and improve the conversion efficiency of solar cells.
  • Dier laser is used to open the passivation film on the back surface, so that the aluminum and silicon form an ohmic contact, and the opening rate is controlled between 3% and 10%.
  • step (12) The silicon wafer obtained in step (11) is fired at a high temperature to form a back electrode, an aluminum back electric field, and a positive electrode to obtain a high-efficiency SE-PERC solar cell finished product.
  • the firing temperature is 300-900 ° C, preferably 300-600 ° C.
  • Frontal laser use Dier laser for frontal doping, and decrease the square resistance of silicon wafer to 30 ⁇ / sq;
  • Annealing use hot oxygen for annealing treatment and control the temperature at 500 °C;
  • an Al 2 O 3 / SiN x film is deposited on the back surface, and the thickness of the passivation film is 110 nm;
  • a SiN x film is deposited on the front side, the thickness of the anti-reflection film is controlled at 65 nm, and the refractive index is 2.05;
  • Paste printing Back screen paste and aluminum paste are printed on the back of the silicon wafer by screen printing process; positive electrode paste is printed on the front side and dried;
  • Frontal laser use Dier laser for frontal doping, and the square resistance drop of the silicon wafer is controlled to 45 ⁇ / sq;
  • Annealing use hot oxygen for annealing treatment and control the temperature at 550 ° C;
  • the SiN x film is deposited on the front side, the thickness of the antireflection film is controlled at 80 nm, and the refractive index is 2.11;
  • Paste printing Back screen paste and aluminum paste are printed on the back of the silicon wafer by screen printing process; positive electrode paste is printed on the front side and dried;
  • Frontal laser use Dier laser for frontal doping, and the square resistance drop of the silicon wafer is controlled to 45 ⁇ / sq;
  • Annealing use hot oxygen for annealing treatment and control the temperature at 550 ° C;
  • an Al 2 O 3 / SiN x film is deposited on the back surface, and the thickness of the passivation film is 135 nm;
  • a SiN x film is deposited on the front side, the thickness of the anti-reflection film is controlled at 80 nm, and the refractive index is 2.15;
  • (10) Backside laser use Dir laser to open the passivation film on the back side, and the opening rate is controlled to 3.5%;
  • Paste printing Back screen paste and aluminum paste are printed on the back of the silicon wafer by screen printing process; positive electrode paste is printed on the front side and dried;
  • the SE-PERC solar cell efficiency in the present invention is above 21%. Compared with traditional SE-PERC solar cells, the efficiency has been significantly improved.
  • step (1) and step (2) are the same as Embodiment 3 of the present invention; step (3) is the same as step (5) of Embodiment 3 of the present invention; step (4) is Use HF / HNO 3 solution (ratio 1: 2) to perform acid etching polishing and PSG removal on silicon wafers.
  • the weight loss of the etching is controlled to 0.35g, and the reflectance is controlled to 20% -30%.
  • Step (5)- Step (11) is the same as step (6) -step (12) of Embodiment 3 of the present invention.
  • step (1) and step (2) are the same as the embodiment 3 of the present invention
  • step (3) is the same as the step (5) of the embodiment 3
  • Steps (3) and (4) in Embodiment 3 of the present invention are respectively the same
  • Steps (6)-(12) are the same as Steps (6)-(12) in Embodiment 3 of the present invention.
  • Example 3 500 solar cells in Example 3, Comparative Example 1, and Comparative Example 2 were produced and tested for performance.
  • the test results are shown in Table 2.
  • Table 2 As can be seen from Table 2, compared with the traditional preparation method, the preparation method of the present invention can effectively improve the efficiency of the solar cell, and its gain can reach 0.8-1%.

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Abstract

La présente invention concerne une photopile et un procédé de préparation associé. Le procédé comprend des étapes de texturation, de diffusion, d'élimination du PSG sur le côté arrière, de polissage alcalin, de dopage lourd sur le côté avant, de retrait du PSG sur le côté avant, de recuit, de dépôt d'un film de passivation, de dépôt d'un film antireflet, de perforation sur le côté arrière, d'impression, de frittage et de recuit d'électrode. La réflectivité côté arrière de la photopile est efficacement réduite par polissage alcalin sur le côté arrière, de telle sorte que la transmittance dans une bande de longueur d'onde est considérablement réduite, ce qui permet de réduire la perte de transmission de lumière et d'augmenter une densité de courant électrique Jsc, puis d'améliorer l'efficacité de conversion d'une photopile SE-PERC.
PCT/CN2019/098440 2018-09-17 2019-07-30 Photopile et procédé de préparation associé WO2020057264A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201811080648.9A CN109449248A (zh) 2018-09-17 2018-09-17 一种高效率se-perc太阳能电池的制备方法
CN201811080648.9 2018-09-17

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CN115132876A (zh) * 2021-03-22 2022-09-30 黄河水电西宁太阳能电力有限公司 一种基于se背面碱抛光的高效perc电池制备工艺

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CN109888061B (zh) * 2019-03-22 2023-09-26 通威太阳能（安徽）有限公司 一种碱抛光高效perc电池及其制备工艺
CN110010721B (zh) * 2019-03-22 2020-11-06 通威太阳能（合肥）有限公司 一种基于se的碱抛光高效perc电池工艺
CN110416323A (zh) * 2019-07-10 2019-11-05 天津爱旭太阳能科技有限公司 一种背面金属化接触区具有钝化层的perc电池及其制备方法
CN110518088B (zh) * 2019-07-18 2022-04-12 天津爱旭太阳能科技有限公司 一种se太阳能电池的制备方法
CN110459646A (zh) * 2019-08-07 2019-11-15 山西潞安太阳能科技有限责任公司 一种适用于碱抛激光选择性发射极的新型工艺
CN110534616B (zh) * 2019-08-29 2021-12-07 常州时创能源股份有限公司 晶硅电池分片的制备工艺
CN111009588A (zh) * 2019-10-14 2020-04-14 中建材浚鑫科技有限公司 一种perc电池及其制备方法
CN112670367A (zh) * 2019-10-15 2021-04-16 浙江爱旭太阳能科技有限公司 Perc太阳能电池及其制备方法
CN110752273B (zh) * 2019-10-30 2022-07-01 无锡尚德太阳能电力有限公司 应用在多晶硅片上简化的背面钝化电池工艺
CN110993728A (zh) * 2019-11-12 2020-04-10 浙江爱旭太阳能科技有限公司 一种红外激光退火的单晶硅se-perc电池的制造方法
CN110931598A (zh) * 2019-11-12 2020-03-27 浙江爱旭太阳能科技有限公司 一种二次退火的单晶硅se-perc电池的制造方法
CN110828619B (zh) * 2020-01-09 2020-04-10 浙江爱旭太阳能科技有限公司 一种激光优化绕镀的p型太阳能电池制造方法
CN111341880A (zh) * 2020-03-06 2020-06-26 浙江正泰太阳能科技有限公司 太阳能电池的制造方法
CN111933750A (zh) * 2020-08-03 2020-11-13 山西潞安太阳能科技有限责任公司 一种热氧化碱抛光se—perc太阳能电池制备方法
CN111900230A (zh) * 2020-08-03 2020-11-06 山西潞安太阳能科技有限责任公司 一种链式氧化碱抛光se—perc太阳能电池制备方法
CN112201715A (zh) * 2020-10-13 2021-01-08 天合光能股份有限公司 一种新型太阳能电池及其制备方法

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