CN113161449A - 一种perc太阳能电池的制备方法 - Google Patents
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Abstract
本发明涉及太阳能电池生产领域。一种PERC太阳能电池的制备方法,按制绒、扩散、激光SE、去背面PSG、碱刻蚀抛光、去正面PSG、退火、氧化铝、正面沉积减反射膜、背面激光开槽、丝网印刷、烧结的工艺进行,在激光SE后首先进行链式氧化,然后进行臭氧氧化,最后再进行去背面PSG及后续步骤,链式氧化为在激光SE中进行磷掺杂的面镀一层氧化膜,氧化膜厚度控制在10‑100nm,温度控制在500‑800℃,臭氧氧化为在链式氧化产生氧化膜后通入臭氧,加强正面保护效果,臭氧浓度控制在10‑100ppm。
Description
技术领域
本发明涉及太阳能电池生产领域。
背景技术
随着全球气候变暖,各种可再生能源迅速发展。其中光伏作为重要的可再生能源,近十五年飞速的发展,各类电池百花齐放,其中单晶高效PERC电池已经初步具备平价上网,对全球新能源发展做出重要贡献。
PERC太阳能电池是目前市场上最主流的的高效电池之一。其中SE-PERC电池是在PERC基础上增加的工序,实现了太阳能电池的选择性掺杂。将正面激光重掺杂技术(SE)与细栅线相结合,大提升了钝化效果,开路电压明显提升,大大提升了太阳能电池的转换效率。SE-PERC太阳能电池从上往下结构包括正电极、氮化硅、氧化硅、N+层、N++层、P型硅、SiNx/Al2O3叠层、背电场、背电极。现有SE-PERC太阳能制备方法有湿法刻蚀工序中一种为碱刻蚀背面抛光,其制备流程为:制绒-扩散- 激光SE-去背面PSG-背面碱刻蚀抛光-去正面PSG-退火-双面镀氧化铝-正面沉积减反膜-背面沉积钝化膜-背面激光开孔-背电极、背电场和正电极印刷-烧结。激光SE要将扩散后的PN结进行重掺杂,导致重掺杂区域的氧化层受损,重掺杂部分PN结会暴露出来。在进行槽式碱抛光背面过程中,抛光液会侵蚀到正面PN结,导致电池转换效率下降。因此有必要通过一种新的工艺来保护PN结不被抛光液侵蚀。
发明内容
本发明所要解决的技术问题是:如何改善槽式碱抛的缺点,保证PN结不会受损伤。
本发明所采用的技术方案是:一种PERC太阳能电池的制备方法,按制绒、扩散、激光SE、去背面PSG、碱刻蚀抛光、去正面PSG、退火、氧化铝、正面沉积减反射膜、背面激光开槽、丝网印刷、烧结的工艺进行,在激光SE后首先进行链式氧化,然后进行臭氧氧化,最后再进行去背面PSG及后续步骤,链式氧化为在激光SE中进行磷掺杂的面镀一层氧化膜,氧化膜厚度控制在10-100nm,温度控制在500-800℃,臭氧氧化为在链式氧化产生氧化膜后通入臭氧,加强正面保护效果,臭氧浓度控制在10-100ppm。
硅片制绒、清洗并烘干后,减重控制在0.3-0.7g,反射率控制在9-13%。
扩散为磷扩散,扩散后方阻控制在90-150Ω/□,结深控制在100-100nm。
激光SE后方阻控制在50-80Ω/□。
碱刻蚀抛光时,减重控制在0.2-0.5g,背面反射率控制在35-60%。
退火时,退火温度控制在600-900℃,氧化膜厚度控制在3-20nm。
氧化铝为在硅片表面镀双面氧化铝,氧化铝膜厚控制在2-20nm,氧化铝折射率控制在1.6-1.68。
正面沉积减反射膜时,氮化硅的折射率控制在60-85nm,折射率控制在1.95-2.27,钝化膜厚度控制在80-200nm。
背面激光开槽时,光斑大小在20-45um。
烧结时,烧结温度为300-960℃。
本发明的有益效果是:本发明通过制绒、扩散、激光SE、链式氧化+臭氧、去背面PSG、碱抛光、正面去PSG、退火、氧化铝、正面沉积减反膜、背面沉积钝化膜、背面激光开槽、丝网印刷、烧结的工艺,制备得到了高转化效率的PERC太阳能电池;在激光SE后加一层氧化硅可以保护正面PN结不受损伤,减少电池漏电情况;氧化硅具有很强钝化效果,Uoc会有提升,最终转换效率有提升。
具体实施方式
本实施例中高效率PERC太阳能电池的制备方法如下:
制绒:选用1000片的P型1-3Ω.cm的硅片进行清洗、制绒、酸洗、水洗后烘干,减重控制为0.5g,反射率控制为12%;
扩散:对制绒后的硅片进行低压扩散,方阻控制在130Ω/□,结深控制在320nm;
激光SE:使用帝尔激光机台进行激光掺杂,SE后方阻控制在70Ω/□;
链式氧化:对SE后的硅片进行氧化,氧化膜厚度控制在15nm,温度在620℃;
臭氧:臭氧浓度控制在30ppm;
去背面PSG:采用HF去除背面PSG;
碱刻蚀抛光:利用氢氧化钠和添加剂将硅片背面进行碱抛光,减重控制在0.35g,反射率控制在38%;
去正面PSG:采用HF去除正面PSG;
退火:对去正面PSG后硅片进行退火处理,使用温度在850℃,氧化膜厚度控制在6nm;
氧化铝:在硅片双面镀氧化铝,氧化铝厚度控制在3nm,折射率控制在1.62;
正面沉积减反射膜:经过PECVD在正面沉积60nm氮化硅膜,折射率控制在1.95;
背面沉积钝化膜:在PECVD上背面沉积110nm氮化硅膜;
背面激光开槽:对背面氮化硅和氧化铝进行激光开槽,光斑大小控制在25nm;
丝网印刷:对背电极、背电场和正电极进行印刷;
烧结:对丝网印刷后的硅片进行烧结,烧结温度控制在890℃。
实例二
本实施例中高效率PERC太阳能电池的制备方法如下:
制绒:选用1000片的P型1-3Ω.cm的硅片进行清洗、制绒、酸洗、水洗后烘干,减重控制为0.3g,反射率控制为9.5%;
扩散:对制绒后的硅片进行低压扩散,方阻控制在95Ω/□,结深控制在240nm;
激光SE:使用帝尔激光机台进行激光掺杂,SE后方阻控制在50Ω/□;
链式氧化:对SE后的硅片进行氧化,氧化膜厚度控制在20nm,温度在520℃;
臭氧:臭氧浓度控制在50ppm;
去背面PSG:采用HF去除背面PSG;
碱刻蚀抛光:利用氢氧化钠和添加剂将硅片背面进行碱抛光,减重控制在0.45g,反射率控制在50%;
去正面PSG:采用HF去除正面PSG;
退火:对去正面PSG后硅片进行退火处理,使用温度在780℃,氧化膜厚度控制在8nm;
氧化铝:在硅片双面镀氧化铝,氧化铝厚度控制在10nm,折射率控制在1.61;
正面沉积减反射膜:经过PECVD在正面沉积75nm氮化硅膜,折射率控制在2.10;
背面沉积钝化膜:在PECVD上背面沉积160nm氮化硅膜;
背面激光开槽:对背面氮化硅和氧化铝进行激光开槽,光斑大小控制在35nm;
丝网印刷:对背电极、背电场和正电极进行印刷;
烧结:对丝网印刷后的硅片进行烧结,烧结温度控制在900℃。
电性能参数如下:
其中,Uoc是开路电压,Isc是短路电流,Rs是串联电阻,Rsh是并联电阻,FF是填充因子,NCell是电池片的转换效率。实施例1相比仅仅进行链式氧化不进行臭氧氧化,开路电压高3mV,短路电流高了37mA左右,FF基本持平,转换效率提高0.13%。实施例2相比仅仅进行臭氧氧化不进行链式有氧化开路电压高了4mV,短路电流高了37mA,FF基本持平,转换效率提高0.18%。在激光SE前增加链式氧化+臭氧,转换效率提升在0.13%-0.20%之间。
Claims (10)
1.一种PERC太阳能电池的制备方法,按制绒、扩散、激光SE、去背面PSG、碱刻蚀抛光、去正面PSG、退火、氧化铝、正面沉积减反射膜、背面激光开槽、丝网印刷、烧结的工艺进行,其特征在于:在激光SE后首先进行链式氧化,然后进行臭氧氧化,最后再进行去背面PSG及后续步骤,链式氧化为在激光SE中进行磷掺杂的面镀一层氧化膜,氧化膜厚度控制在10-100nm,温度控制在500-800℃,臭氧氧化为在链式氧化产生氧化膜后通入臭氧,加强正面保护效果,臭氧浓度控制在10-100ppm。
2.根据权利要求1所述的一种PERC太阳能电池的制备方法,其特征在于:硅片制绒、清洗并烘干后,减重控制在0.3-0.7g,反射率控制在9-13%。
3.根据权利要求1所述的一种PERC太阳能电池的制备方法,其特征在于:扩散为磷扩散,扩散后方阻控制在90-150Ω/□,结深控制在100-100nm。
4.根据权利要求1所述的一种PERC太阳能电池的制备方法,其特征在于:激光SE后方阻控制在50-80Ω/□。
5.根据权利要求1所述的一种PERC太阳能电池的制备方法,其特征在于:碱刻蚀抛光时,减重控制在0.2-0.5g,背面反射率控制在35-60%。
6.根据权利要求1所述的一种PERC太阳能电池的制备方法,其特征在于:退火时,退火温度控制在600-900℃,氧化膜厚度控制在3-20nm。
7.根据权利要求1所述的一种PERC太阳能电池的制备方法,其特征在于:氧化铝为在硅片表面镀双面氧化铝,氧化铝膜厚控制在2-20nm,氧化铝折射率控制在1.6-1.68。
8.根据权利要求1所述的一种PERC太阳能电池的制备方法,其特征在于:正面沉积减反射膜时,氮化硅的折射率控制在60-85nm,折射率控制在1.95-2.27,钝化膜厚度控制在80-200nm。
9.根据权利要求1所述的一种PERC太阳能电池的制备方法,其特征在于:背面激光开槽时,光斑大小在20-45um。
10.根据权利要求1所述的一种PERC太阳能电池的制备方法,其特征在于:烧结时,烧结温度为300-960℃。
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WO2023179021A1 (zh) * | 2022-03-24 | 2023-09-28 | 横店集团东磁股份有限公司 | 一种浅结扩散发射极的晶硅太阳能电池的制备方法及其应用 |
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