CN112201715A - 一种新型太阳能电池及其制备方法 - Google Patents
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Abstract
本发明属于太阳电池技术领域，尤其涉及一种新型太阳能电池及其制备方法，包括衬底，所述的衬底背面由内向外依次沉积有第一SiO2钝化层和叠层膜，衬底正面由内向外依次沉积有轻扩散区、第二SiO2钝化层和第二SiNx膜，在轻扩散区下设有重扩散区，金属栅线依次穿过第二SiNx膜、第二SiO2钝化层和轻扩散区后与重扩散区接触，铝背场依次穿过叠层膜和第一SiO2钝化层后与衬底接触。本发明轻扩散区和重扩散区独立优化，轻扩散区扩散层较浅，有助于提高开压和电流，重扩散区扩散层很深，保证接触区良好的金属接触，降低Rs，从而全面提高电池效率。
Description
技术领域
本发明属于太阳电池技术领域，涉及一种新型太阳能电池及其制备方法。
背景技术
SE(选择性发射极)技术在PERC电池结构中有助于提高电池开路电压和短路电流同时能保证串阻不上升。金属接触区为重掺杂区域，以便获得较低的金属-半导体欧姆接触电阻；另一方面在没有金属接触的其余区域采用轻掺杂的发射极，以便获得较低的发射极复合电流J0e，从而形成了轻/重掺杂的选择性发射极。
目前常规的工艺流程是低压磷扩散形成磷硅玻璃层，该玻璃层含有较高浓度的P源，利用激光的较高能量形成重扩散区。
发明内容
本发明的目的是针对上述问题，提供一种新型太阳能电池。
本发明的另一目的是提供一种新型太阳能电池的制备方法。
为达到上述目的，本发明采用了下列技术方案：
一种新型太阳能电池，包括衬底，所述的衬底背面由内向外依次沉积有第一SiO2钝化层和叠层膜，衬底正面由内向外依次沉积有轻扩散区、第二SiO2钝化层和第二SiNx膜，在轻扩散区下设有重扩散区，金属栅线依次穿过第二SiNx膜、第二SiO2钝化层和轻扩散区后与重扩散区接触，铝背场依次穿过叠层膜和第一SiO2钝化层后与衬底接触。
进一步的，所述的叠层膜包括位于第一SiO2钝化层上的SiON膜和第一SiNx膜。
进一步的，SiON膜厚度为25-70nm，第一SiNx膜厚度为100-150nm，第一SiNx膜折射率为2.1。
进一步的，所述的第一SiO2钝化层和第二SiO2钝化层的厚度分别为15-25nm。
进一步的，第二SiNx膜厚度为50-100nm，折射率为2.03-2.2。
进一步的，所述的轻扩散区的方块电阻为150-250ohm/sq，重扩散区厚度为1-3um，宽度为50-100um，方块电阻为10-30ohm/sq。
一种新型太阳能电池的制备方法，以P型直拉单晶硅片为衬底，衬底正面通过高温扩散形成轻扩散区，得到轻发射极，通过涂抹或印刷高浓度含磷液体，并利用激光的高能量实施局部掺杂，形成重扩散区，得到重发射极，衬底背面具有SiO2/SiON/SiNx形成的钝化层，激光开槽后印刷Al浆形成铝背场，衬底正面印刷Ag材料的金属栅线，烧结后形成正背面电极，金属栅线与重扩散区接触。
一种新型太阳能电池的制备方法，选择P型直拉单晶硅片为衬底，衬底正面在低压扩散炉管中扩散形成轻扩散区，扩散温度控制在700-850℃，形成正面轻N型发射极，扩散后方块电阻控制在150-250ohm/sq，
丝网印刷液态高浓度磷源，印刷时采用非金属网版，印刷压力在80-100N，印刷液体厚度在1-3um之间，印刷宽度在50-100um之间，之后在链式烘干炉烘干，烘干温度为120-200℃，烘干时间在10min之内，
采用激光掺杂在衬底正面制备形成重扩散区，即金属接触区域，
链式清洗机湿法清洗去除衬底背面扩散，刻蚀深度为2-3um，
采用高温管式氧化炉生长SiO2钝化层，管内温度在750-800℃之间，O2在4L-10L之间，氧化时间在10-15min，在衬底正面的轻扩散区上和衬底背面分别沉积形成第二SiO2钝化层和第一SiO2钝化层，
管式PECVD背面沉积叠层膜，管式PECVD正面沉积减第二SiNx膜，第二SiNx膜厚度为50-100nm，折射率为2.03-2.2，
使用532nm-1064nm的ns激光进行衬底背面局部开槽，将局部的叠层膜去除，丝网印刷Al浆，链式烘干炉烘干Al浆，烘干温度为150-250C，烘干时间为5min-10min，形成铝背场，
正面丝网印刷Ag浆，形成金属栅线，金属栅线与重扩散区接触，烧结形成欧姆接触，烧结炉烧结浆料，烧结温度为720℃-780℃，正背面共烧，形成正面电极和背面电极。
进一步的，激光掺杂时，采用波长为355nm或532nm的激光，光斑采用方形光斑，激光功率控制在25W-40W之间，重扩散区方块电阻为10-30ohm/sq。
进一步的，叠层膜包括位于第一SiO2钝化层上的SiON膜和第一SiNx膜，SiON膜厚度为25-70nm，第一SiNx膜厚度为100-150nm，第一SiNx膜折射率为2.1。
与现有的技术相比，本发明的优点在于：
1、轻扩散区和重扩散区独立优化，轻扩散区扩散层较浅，有助于提高开压和电流，重扩散区扩散层很深，保证接触区良好的金属接触，降低Rs，从而全面提高电池效率。
2、彻底解决现在传统的SE结构技术瓶颈，轻扩散区和重扩散区独立优化，轻扩散区极低的复合电流，保证较高的开路电压和短路电流，重扩散区完全不受轻扩扩散区的影响，利用液态磷源可以实现更好的欧姆接触，从而得到较高的转换效率。
本发明的其它优点、目标和特征将部分通过下面的说明体现，部分还将通过对本发明的研究和实践而为本领域的技术人员所理解。
附图说明
图1是本发明的结构示意图。
图中：衬底1、第一SiO2钝化层2、叠层膜3、轻扩散区4、第二SiO2钝化层5、第二SiNx膜6、重扩散区7、金属栅线8、铝背场9、SiON膜10、第一SiNx膜11。
具体实施方式
为了使本技术领域的人员更好的理解本发明方案，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整的描述。
实施例1
一种新型太阳能电池，包括衬底1，本实施例的衬底1为P型直拉单晶硅片，所述的衬底1背面由内向外依次沉积有第一SiO2钝化层2和叠层膜3，衬底1正面由内向外依次沉积有轻扩散区4、第二SiO2钝化层5和第二SiNx膜6，在轻扩散区4下设有重扩散区7，金属栅线8依次穿过第二SiNx膜6、第二SiO2钝化层5和轻扩散区4后与重扩散区7接触，铝背场9依次穿过叠层膜3和第一SiO2钝化层2后与衬底1接触。
在本实施例中，叠层膜3包括位于第一SiO2钝化层2上的Al2O3膜10和第一SiNx膜11。SiON膜10厚度为25-70nm，第一SiNx膜11厚度为100-150nm，第一SiNx膜11折射率为2.1。
第一SiO2钝化层2和第二SiO2钝化层5的厚度分别为15-25nm，第二SiNx膜6厚度为50-100nm，折射率为2.03-2.2。
轻扩散区4的方块电阻为150-250ohm/sq，掺杂表面浓度低于5E19cm-3，重扩散区7厚度为1-3um，宽度为50-100um，方块电阻为10-30ohm/sq。
轻扩散区和重扩散区独立优化，轻扩散区扩散层较浅，有助于提高开压和电流，重扩散区扩散层很深，保证接触区良好的金属接触，降低Rs，从而全面提高电池效率。
实施例2
一种新型太阳能电池的制备方法，以P型直拉单晶硅片为衬底1，衬底1正面通过高温扩散形成轻扩散区4，得到轻发射极，通过涂抹或印刷高浓度含磷液体，并利用激光的高能量实施局部掺杂，形成重扩散区7，得到重发射极，衬底1背面具有SiO2/SiON/SiNx形成的钝化层，激光开槽后印刷Al浆形成铝背场9，衬底1正面印刷Ag材料的金属栅线8，烧结后形成正背面电极，金属栅线8与重扩散区7接触。得到实施例1所述的新型太阳能电池。
实施例3
一种新型太阳能电池的制备方法，选择P型直拉单晶硅片为衬底1，衬底1正面在低压扩散炉管中扩散形成轻扩散区4，扩散温度控制在700-850℃，形成正面轻N型发射极，扩散后方块电阻控制在150-250ohm/sq，表面掺杂浓度低于5E19cm-3。
丝网印刷液态高浓度磷源，印刷时采用非金属网版，印刷压力在80-100N，印刷液体厚度在1-3um之间，印刷宽度在50-100um之间，之后在链式烘干炉烘干，烘干温度为120-200℃，烘干时间在10min之内，
采用激光掺杂在衬底1正面制备形成重扩散区7，即金属接触区域，激光掺杂时，采用波长为355nm或532nm的激光，光斑采用方形光斑，激光功率控制在25W-40W之间，重扩散区7方块电阻为10-30ohm/sq，扩散掺杂浓度高于4E20cm-3。
链式清洗机湿法清洗去除衬底1背面扩散，刻蚀深度为2-3um，
采用高温管式氧化炉生长SiO2钝化层，管内温度在750-800℃之间，O2在4L-10L之间，氧化时间在10-15min，在衬底1正面的轻扩散区4上和衬底1背面分别沉积形成第二SiO2钝化层5和第一SiO2钝化层2，
管式PECVD背面沉积叠层膜3，管式PECVD正面沉积减第二SiNx膜6，第二SiNx膜6厚度为50-100nm，折射率为2.03-2.2，
使用532nm-1064nm的ns激光进行衬底1背面局部开槽，将局部的叠层膜3去除，丝网印刷Al浆，链式烘干炉烘干Al浆，烘干温度为150-250C，烘干时间为5min-10min，形成铝背场9，正面丝网印刷Ag浆，形成金属栅线8，金属栅线8与重扩散区接触，烧结形成欧姆接触，烧结炉烧结浆料，烧结温度为720℃-780℃，正背面共烧，形成正面电极和背面电极。得到实施例1所述的新型太阳能电池，IV测试，效率为22.86％
叠层膜3包括位于第一SiO2钝化层2上的SiON膜10和第一SiNx膜11。SiON膜10厚度为25-70nm，第一SiNx膜11厚度为100-150nm，第一SiNx膜11折射率为2.1。
第一SiO2钝化层2和第二SiO2钝化层5的厚度分别为15-25nm，第二SiNx膜6厚度为50-100nm，折射率为2.03-2.2。
轻扩散区4的方块电阻为150-250ohm/sq，表面掺杂浓度低于5E19cm-3，重扩散区7厚度为1-3um，宽度为50-100um，方块电阻为10-30ohm/sq，扩散掺杂浓度高于4E20cm-3。
轻扩散区和重扩散区独立优化，轻扩散区扩散层较浅，有助于提高开压和电流，重扩散区扩散层很深，保证接触区良好的金属接触，降低Rs，从而全面提高电池效率。
本实施例彻底解决现在传统的SE结构技术瓶颈，轻扩散区和重扩散区独立优化，轻扩散区极低的复合电流，保证较高的开路电压和短路电流，重扩散区完全不受轻扩扩散区的影响，利用液态磷源可以实现更好的欧姆接触，从而得到较高的转换效率。
本文中所描述的具体实施例仅仅是对本发明精神作举例说明。本发明所属技术领域的技术人员可以对所描述的具体实施例做各种各样的修改或补充或采用类似的方式替代，但并不会偏离本发明的精神。
Claims (10)
1.一种新型太阳能电池，包括衬底(1)，其特征在于，所述的衬底(1)背面由内向外依次沉积有第一SiO2钝化层(2)和叠层膜(3)，衬底(1)正面由内向外依次沉积有轻扩散区(4)、第二SiO2钝化层(5)和第二SiNx膜(6)，在轻扩散区(4)下设有重扩散区(7)，金属栅线(8)依次穿过第二SiNx膜(6)、第二SiO2钝化层(5)和轻扩散区(4)后与重扩散区(7)接触，铝背场(9)依次穿过叠层膜(3)和第一SiO2钝化层(2)后与衬底(1)接触。
2.根据权利要求1所述的一种新型太阳能电池，其特征在于，所述的叠层膜(3)包括位于第一SiO2钝化层(2)上的SiON膜(10)和第一SiNx膜(11)。
3.根据权利要求2所述的一种新型太阳能电池，其特征在于，SiON膜(10)厚度为25-70nm，第一SiNx膜(11)厚度为100-150nm，第一SiNx膜(11)折射率为2.1。
4.根据权利要求2所述的一种新型太阳能电池，其特征在于，所述的第一SiO2钝化层(2)和第二SiO2钝化层(5)的厚度分别为15-25nm。
5.根据权利要求1所述的一种新型太阳能电池，其特征在于，第二SiNx膜(6)厚度为50-100nm，折射率为2.03-2.2。
6.根据权利要求1所述的一种新型太阳能电池，其特征在于，所述的轻扩散区(4)的方块电阻为150-250ohm/sq，重扩散区(7)厚度为1-3um，宽度为50-100um，方块电阻为10-30ohm/sq。
7.根据权利要求1-6任意一项所述的一种新型太阳能电池的制备方法，其特征在于，以P型直拉单晶硅片为衬底(1)，衬底(1)正面通过高温扩散形成轻扩散区(4)，得到轻发射极，通过涂抹或印刷高浓度含磷液体，并利用激光的高能量实施局部掺杂，形成重扩散区(7)，得到重发射极，衬底(1)背面具有SiO2/SiON/SiNx形成的钝化层，激光开槽后印刷Al浆形成铝背场(9)，衬底(1)正面印刷Ag材料的金属栅线(8)，烧结后形成正背面电极，金属栅线(8)与重扩散区(7)接触。
8.根据权利要求1-6任意一项所述的一种新型太阳能电池的制备方法，其特征在于，选择P型直拉单晶硅片为衬底(1)，衬底(1)正面在低压扩散炉管中扩散形成轻扩散区(4)，扩散温度控制在700-850℃，形成正面轻N型发射极，扩散后方块电阻控制在150-250ohm/sq，
丝网印刷液态高浓度磷源，印刷时采用非金属网版，印刷压力在80-100N，印刷液体厚度在1-3um之间，印刷宽度在50-100um之间，之后在链式烘干炉烘干，烘干温度为120-200℃，烘干时间在10min之内，
采用激光掺杂在衬底(1)正面制备形成重扩散区(7)，即金属接触区域
链式清洗机湿法清洗去除衬底(1)背面扩散，刻蚀深度为2-3um，
采用高温管式氧化炉生长SiO2钝化层，管内温度在750-800℃之间，O2在4L-10L之间，氧化时间在10-15min，在衬底(1)正面的轻扩散区(4)上和衬底(1)背面分别沉积形成第二SiO2钝化层(5)和第一SiO2钝化层(2)，
管式PECVD背面沉积叠层膜(3)，管式PECVD正面沉积减第二SiNx膜(6)，第二SiNx膜(6)厚度为50-100nm，折射率为2.03-2.2，
使用532nm-1064nm的ns激光进行衬底(1)背面局部开槽，将局部的叠层膜(3)去除，丝网印刷Al浆，链式烘干炉烘干Al浆，烘干温度为150-250C，烘干时间为5min-10min，形成铝背场(9)，
正面丝网印刷Ag浆，形成金属栅线(8)，金属栅线(8)与重扩散区接触，烧结形成欧姆接触，烧结炉烧结浆料，烧结温度为720℃-780℃，正背面共烧，形成正面电极和背面电极。
9.根据权利要求8所述的一种新型太阳能电池的制备方法，其特征在于，激光掺杂时，采用波长为355nm或532nm的激光，光斑采用方形光斑，激光功率控制在25W-40W之间，重扩散区(7)方块电阻为10-30ohm/sq。
10.根据权利要求8所述的一种新型太阳能电池的制备方法，其特征在于，叠层膜(3)包括位于第一SiO2钝化层(2)上的SiON膜(10)和第一SiNx膜(11)，SiON膜(10)厚度为25-70nm，第一SiNx膜(11)厚度为100-150nm，第一SiNx膜(11)折射率为2.1。
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