WO2020052026A1 - Oled显示装置及其制备方法 - Google Patents

Oled显示装置及其制备方法 Download PDF

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Publication number
WO2020052026A1
WO2020052026A1 PCT/CN2018/113554 CN2018113554W WO2020052026A1 WO 2020052026 A1 WO2020052026 A1 WO 2020052026A1 CN 2018113554 W CN2018113554 W CN 2018113554W WO 2020052026 A1 WO2020052026 A1 WO 2020052026A1
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Prior art keywords
film layer
layer
display device
oled
light extraction
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PCT/CN2018/113554
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English (en)
French (fr)
Inventor
郭天福
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武汉华星光电半导体显示技术有限公司
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Priority to US16/308,781 priority Critical patent/US10985346B2/en
Publication of WO2020052026A1 publication Critical patent/WO2020052026A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • the present application relates to the field of display technology, and in particular, to an OLED display device and a manufacturing method thereof.
  • OLED displays also known as organic electroluminescence displays
  • OLED displays are a new type of flat-panel display device. Due to its light weight, wide viewing angle, fast response time, low temperature resistance, and luminous efficiency Advanced advantages are recognized by the industry as the most promising display devices.
  • OLED devices can be made into flexible flexible displays on flexible substrates, which is a huge advantage unique to OLED devices.
  • the light output efficiency of OLED devices is still low, so how to effectively improve the light output efficiency of OLED devices is still a difficult challenge.
  • the existing OLED display device and its preparation method need to be improved due to the luminous flux of the organic light-emitting layer, the optical waveguide effect between the organic layer materials, and the poor optical coupling of the device substrate.
  • the low brightness of OLED devices further leads to low light emitting efficiency of OLED devices.
  • the luminous flux of the organic light-emitting layer needs to be improved, an optical waveguide effect is easily generated between the organic layer materials, and the optical coupling of the device substrate is poor, resulting in low brightness of the OLED device and further leading to the OLED.
  • the light emitting efficiency of the device is low.
  • the application provides an OLED display device and a preparation method thereof, which can effectively improve the light emitting efficiency of the OLED display device to solve the existing OLED display device and a preparation method thereof.
  • the luminous flux of the organic light emitting layer needs to be improved, and the materials of the organic layers Problems such as an optical waveguide effect and poor optical coupling between device substrates are easily caused between the two, which results in a low brightness of the OLED device and further a technical problem in which the light emitting efficiency of the OLED display device is low.
  • the present application provides an OLED display device including a flexible substrate, a TFT layer disposed on the flexible substrate, an OLED light-emitting layer disposed on the TFT layer, the TFT layer, and the OLED light-emitting layer.
  • the light extraction film layer includes a first light extraction film layer and a micro lens array, the first light extraction film layer is located on the TFT layer, and the micro lens array is located on the OLED light emitting layer.
  • the light extraction film layer is a plasma polymerized hexamethyldisilaether soft film, and the thickness of the light extraction film layer is 1 to 2 microns.
  • the micro lens array includes more than one micro lens, and each of the micro lenses is arranged in an array.
  • the shape of the microlenses is a spherical shape or an oval shape.
  • the inorganic protective film layer is zirconium dioxide or titanium dioxide, and the thickness of the inorganic protective film layer is less than 50 nanometers.
  • the packaging film layer includes a first inorganic packaging layer, a first organic packaging layer, and a second inorganic packaging layer that are stacked.
  • the present application also provides a method for manufacturing an OLED display device.
  • the method includes:
  • the light extraction film layer is a plasma polymerized hexamethyldisilaether soft film, and the thickness of the light extraction film layer is 1 to 2 microns.
  • the microlens array includes more than one microlens, and each of the microlenses is arranged in an array, and the shape of the microlens is a sphere or an ellipse .
  • the inorganic protective film layer is zirconium dioxide or titanium dioxide, and the thickness of the inorganic protective film layer is less than 50 nanometers.
  • the beneficial effect of the present application is that the OLED display device and the manufacturing method thereof provided by the present application form a microlens array with a specific size and a specific arrangement order on the surface of the OLED light-emitting layer by nano-imprint technology, and then prepare an inorganic protection layer
  • the film layer is beneficial to improve the light coupling efficiency of the microlens array and further improve the light output efficiency of the OLED display device.
  • FIG. 1 is a schematic structural diagram of an OLED display device of the present application.
  • FIG. 2 is another schematic structural diagram of an OLED display device of the present application.
  • FIG. 3 is a flowchart of a method for manufacturing an OLED display device of the present application.
  • 4A-4E are schematic diagrams of a method for manufacturing the OLED display device shown in FIG. 3.
  • This application is directed to the existing OLED display device and its preparation method.
  • the luminous flux of the organic light-emitting layer needs to be improved, problems such as the optical waveguide effect between the organic layer materials, and the poor optical coupling of the device substrate are caused, which leads to the brightness of the OLED device.
  • the low level further causes a technical problem that the light emitting efficiency of the OLED display device is low, and this embodiment can solve this defect.
  • the present application provides an OLED display device including a flexible substrate 10, a TFT layer 20 disposed on the flexible substrate 10, an OLED light-emitting layer 30 disposed on the TFT layer 20, and a device.
  • the OLED light-emitting layer 30 includes a blue sub-pixel region light-emitting layer 31, a green sub-pixel region light-emitting layer 32, and a red sub-pixel region light-emitting layer 33.
  • the light extraction film layer 40 includes a first light extraction film layer 41 and A microlens array 42, the first light extraction film layer 41 is located on the TFT layer 20, and the microlens array 42 is located on the OLED light emitting layer 30.
  • the light extraction film layer 40 is a plasma polymerized hexamethyldisilaether soft film, and the thickness of the light extraction film layer is 1 to 2 micrometers.
  • the microlens array 42 includes more than one microlens 421. One of the microlenses 421 is arranged in an array; the shape of the microlenses 421 is spherical; the material of the inorganic protective film layer 50 is zirconia or titanium dioxide, and the thickness of the inorganic protective film layer 50 is less than 50 nanometers;
  • the packaging film layer 60 includes a first inorganic packaging layer, a first organic packaging layer, and a second inorganic packaging layer.
  • FIG. 2 is another schematic structural diagram of an OLED display device of the present application. It is different from the OLED display device in FIG. 1 only in the shape of the microlenses 421, and the shape of the microlenses 421 is ellipsoidal.
  • the present application provides a method for manufacturing an OLED display device, and the method includes:
  • a substrate is provided.
  • a flexible substrate 10 is coated on the surface of the substrate, and then a TFT layer 20 is prepared on the surface of the flexible substrate 10, and then an OLED light emitting layer 30 is prepared on the surface of the TFT layer.
  • the S10 further includes:
  • the material of the flexible substrate 10 is a polyimide film, and the flexible substrate 10 is a wear-resistant transparent plastic film.
  • a TFT layer 20 is prepared on the flexible substrate 10 through a yellow light process, and the TFT layer 20 is an inorganic film layer.
  • an OLED light emitting layer 30 is prepared on the TFT layer 20 by vacuum evaporation.
  • the OLED light-emitting layer 30 includes a blue sub-pixel region light-emitting layer 31, a green sub-pixel region light-emitting layer 32, and a red sub-pixel region light-emitting layer 33, as shown in FIG. 4A.
  • the S20 further includes:
  • the light extraction film layer 40 is deposited by chemical weather.
  • the light extraction film layer 40 is a plasma polymerized hexamethyldisilane soft film.
  • the thickness of the light extraction film layer is 1 to 2 microns, as shown in FIG. 4B.
  • the plasma polymerized hexamethyldisilaether soft film has the characteristics of low hardness, softness and easy plasticity, and can be obtained by a plasma chemical vapor deposition method without increasing the difficulty of the process.
  • the S30 further includes:
  • the nano-imprint processing is performed on the light extraction film layer 40 on the surface of the OLED light-emitting layer 30 by using a specific mold to form a microlens array 42.
  • the portion of the light extraction film layer 40 that has not undergone the nano-imprint processing is the first A light extraction film layer 41; the microlens array 42 has a special size and a specific shape.
  • the microlens array 42 includes more than one microlens 421, and each of the microlenses 421 is arranged in an array.
  • the shape of 421 is spherical or ellipsoidal; the size and shape of each of the microlenses 421 can be obtained by adjusting the grinding tool according to actual needs, as shown in FIG. 4C.
  • the micro-lens array 42 is located on the surface of the OLED light-emitting layer 30.
  • the OLED light-emitting layer 30 includes a blue sub-pixel region light-emitting layer 31, a green sub-pixel region light-emitting layer 32, and a red sub-pixel region light-emitting layer 33.
  • the size of the micro-lens array 42 on the blue sub-pixel region light-emitting layer 31 is different from the size of the micro-lens array 42 on the red sub-pixel region light-emitting layer 33.
  • the size can be adjusted according to the actual light emitting efficiency of the blue sub-pixel region light-emitting layer 31, the green sub-pixel region light-emitting layer 32, and the red sub-pixel region light-emitting layer 33; the distance of the microlens array 42
  • the surface of the OLED light emitting layer 30 is very close, and the light extraction effect is better.
  • step S40 an inorganic protective film layer 50 is plated on the surface of the light extraction film layer 40 by an atomic deposition process.
  • the S40 further includes:
  • An atomic deposition process is used to plate an inorganic protective film layer 50 on the surface of the light extraction film layer 40.
  • the inorganic protective film layer 50 is zirconium dioxide or titanium dioxide.
  • the thickness of the inorganic protective film layer 50 is less than 50 nanometers.
  • the inorganic protective film layer 50 has a high refractive index and grows along the outline of the light extraction film layer 40.
  • the inorganic protective film layer 50 can maintain the shape of the microlenses 421 and enhance the microlenses 421.
  • the high-refractive-index inorganic film layer will further enhance the light extraction capability of the light extraction film layer 40, as shown in FIG. 4D.
  • the S50 further includes:
  • An encapsulating film layer 60 is deposited on the surfaces of the OLED light-emitting layer 30 and the inorganic protective film layer 50.
  • the encapsulating film layer 60 includes a first inorganic encapsulating layer, a first organic encapsulating layer, and a second encapsulating layer.
  • the material of the first inorganic encapsulation layer and the second inorganic encapsulation layer are both silicon nitride, and the material of the organic encapsulation layer is an acrylate polymer.
  • the substrate is removed to obtain the OLED display.
  • the device is shown in Figure 4E.
  • This method uses chemical vapor deposition method to prepare oligomerization and degree of plasma polymerized hexamethyldisilaether soft film material specificity, combines nanoimprint technology and atomic deposition technology to form three-dimensional film growth specificity, and introduces microlens array, In order to achieve the purpose of improving the light emitting efficiency of the OLED.
  • the beneficial effect of the present application is that the OLED display device and the manufacturing method thereof provided by the present application form a microlens array with a specific size and a specific arrangement order on the surface of the OLED light-emitting layer by nano-imprint technology, and then prepare an inorganic protection layer
  • the film layer is beneficial to improve the light coupling efficiency of the microlens array and further improve the light output efficiency of the OLED display device.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种OLED显示装置，包括：柔性衬底(10)、TFT层(20)、OLED发光层(30)、光萃取膜层(40)、无机保护膜层(50)以及封装膜层(60)，其中，所述光萃取膜层(40)包括第一光萃取膜层(41)以及第二光萃取膜层，所述第二光萃取膜层经纳米压印处理形成微透镜阵列（42）；此外，还提供一种OLED显示装置的制备方法。

Description

OLED显示装置及其制备方法 技术领域
本申请涉及显示技术领域，尤其涉及一种OLED显示装置及其制备方法。
 背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)显示器，也称为有机电致发光显示器，是一种新兴的平板显示装置，由于其具有重量轻巧，广视角，响应时间快，耐低温，发光效率高等优点，被业界公认为是最有发展潜力的显示装置。特别是OLED器件可以在柔性基板上做成能弯曲的柔性显示屏，这更是OLED器件所特有的巨大优势。但目前就研究报道而言，OLED器件的出光效率仍然较低，因此如何有效提高OLED器件的出光效率仍然是一个具有挑战的难点。
综上所述，现有的OLED显示装置及其制备方法，由于其有机发光层发光通量有待于提高、各有机层材料之间易产生光波导效应、器件衬底光耦合差等问题，从而导致OLED器件亮度偏低，进一步导致OLED器件的出光效率偏低。
 技术问题
现有的OLED显示装置及其制备方法，其有机发光层发光通量有待于提高、各有机层材料之间易产生光波导效应、器件衬底光耦合差，导致OLED器件亮度偏低，进一步导致OLED器件的出光效率偏低。
 技术解决方案
本申请提供一种OLED显示装置及其制备方法，能够有效提高OLED显示装置的出光效率，以解决现有的OLED显示装置及其制备方法，其有机发光层发光通量有待于提高、各有机层材料之间易产生光波导效应、器件衬底光耦合差等问题，从而导致OLED器件亮度偏低，进一步导致OLED显示装置的出光效率偏低的技术问题。
为解决上述问题，本申请提供的技术方案如下：
本申请提供一种OLED显示装置，包括柔性衬底、设置于所述柔性衬底上的TFT层、设置于所述TFT层上的OLED发光层、设置于所述TFT层以及所述OLED发光层上的光萃取膜层、设置于所述光萃取膜层上的无机保护膜层以及设置于所述OLED发光层以及所述无机保护膜层上的封装膜层；
其中，所述光萃取膜层包括第一光萃取膜层以及微透镜阵列，所述第一光萃取膜层位于所述TFT层上，所述微透镜阵列位于所述OLED发光层上。
在本申请实施例所提供的OLED显示装置中，所述光萃取膜层为等离子体聚合的六甲基二硅醚软膜，所述光萃取膜层的厚度为1~2微米。
在本申请实施例所提供的OLED显示装置中，所述微透镜阵列包括一个以上的微透镜，每一所述微透镜呈阵列排布。
在本申请实施例所提供的OLED显示装置中，所述微透镜的形状为球形或椭圆形。
在本申请实施例所提供的OLED显示装置中，所述无机保护膜层为二氧化锆或二氧化钛，所述无机保护膜层的厚度小于50纳米。
在本申请实施例所提供的OLED显示装置中，所述封装膜层包括层叠设置的第一无机封装层、第一有机封装层以及第二无机封装层。
本申请还提供一种OLED显示装置的制备方法，所述方法包括：
S10，提供一基板，在所述基板的表面涂布一柔性衬底，之后在所述柔性衬底的表面制备TFT层，接着在所述TFT层的表面制备OLED发光层；
S20，在所述TFT层以及所述OLED发光层的表面沉积一层光萃取膜层；
S30，利用特定模具，对位于所述OLED发光层表面的所述光萃取膜层进行纳米压印处理，形成微透镜阵列；
S40，通过原子沉积工艺在所述光萃取膜层的表面镀上一层无机保护膜层；
S50，在位于所述OLED发光层以及所述无机保护膜层的表面沉积出一封装膜层并去除所述基板。
在本申请实施例所提供的OLED显示装置的制备方法中，所述光萃取膜层为等离子体聚合的六甲基二硅醚软膜，所述光萃取膜层的厚度为1~2微米。
在本申请实施例所提供的OLED显示装置的制备方法中，所述微透镜阵列包括一个以上的微透镜，每一所述微透镜呈阵列排布，所述微透镜的形状为球形或椭圆形。
在本申请实施例所提供的OLED显示装置的制备方法中，所述无机保护膜层为二氧化锆或二氧化钛，所述无机保护膜层的厚度小于50纳米。
 有益效果
本申请的有益效果为：本申请提供的OLED显示装置及其制作方法，通过纳米压印技术在OLED发光层的表面形成特定尺寸大小和特定排列顺序的微透镜阵列，然后再制备一层无机保护膜层，有利于提高微透镜阵列的光耦合效率，进一步提升OLED显示装置的出光效率。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本申请OLED显示装置一结构示意图。
图2为本申请OLED显示装置另一结构示意图。
图3为本申请OLED显示装置制备方法流程图。
图4A-图4E为图3所述OLED显示装置制备方法示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
本申请针对现有的OLED显示装置及其制备方法，其有机发光层发光通量有待于提高、各有机层材料之间易产生光波导效应、器件衬底光耦合差等问题，从而导致OLED器件亮度偏低，进一步导致OLED显示装置的出光效率偏低的技术问题，本实施例能够解决该缺陷。
如图1所示，本申请提供一种OLED显示装置，包括柔性衬底10、设置于所述柔性衬底10上的TFT层20、设置于所述TFT层20上的OLED发光层30、设置于所述TFT层20以及所述OLED发光层30上的光萃取膜层40、设置于所述光萃取膜层40上的无机保护膜层50以及设置于所述OLED发光层30以及所述无机保护膜层50上的封装膜层60；
其中，所述OLED发光层30包括蓝色子像素区域发光层31、绿色子像素区域发光层32以及红色子像素区域发光层33；所述光萃取膜层40包括第一光萃取膜层41以及微透镜阵列42，所述第一光萃取膜层41位于所述TFT层20上，所述微透镜阵列42位于所述OLED发光层30上。
所述光萃取膜层40为等离子体聚合的六甲基二硅醚软膜，所述光萃取膜层的厚度为1~2微米；所述微透镜阵列42包括一个以上的微透镜421，每一所述微透镜421呈阵列排布；所述微透镜421的形状为球形；所述无机保护膜层50的材料为二氧化锆或二氧化钛，所述无机保护膜层50的厚度小于50纳米；所述封装膜层60包括层叠设置的第一无机封装层、第一有机封装层以及第二无机封装层。
图2为本申请OLED显示装置另一结构示意图。其与图1中的OLED显示装置的不同之处仅在于所述微透镜421的形状不同，其中，所述微透镜421的形状为椭球形。
如图3所示，本申请提供一种OLED显示装置的制备方法流程，所述方法包括：
S10，提供一基板，在所述基板的表面涂布一柔性衬底10，之后在所述柔性衬底10的表面制备TFT层20，接着在所述TFT层的表面制备OLED发光层30。
具体的，所述S10还包括：
提供一干净的玻璃基板，在所述玻璃基板的表面上涂布柔性衬底10，所述柔性衬底10的材料为聚酰亚胺膜，所述柔性衬底10为耐磨透明塑料薄膜；之后在所述柔性衬底10上通过黄光工艺制备出TFT层20，所述TFT层20为一无机膜层；然后通过真空蒸镀在所述TFT层20上制备OLED发光层30，所述OLED发光层30包括蓝色子像素区域发光层31、绿色子像素区域发光层32以及红色子像素区域发光层33，如图4A所示。
S20，在所述TFT层20以及所述OLED发光层30的表面沉积一层光萃取膜层40。
具体的，所述S20还包括：
在所述TFT层20以及所述OLED发光层30的表面通过化学气象沉积出所述光萃取膜层40，所述光萃取膜层40为等离子体聚合的六甲基二硅醚软膜，所述光萃取膜层的厚度为1~2微米，如图4B所示。
其中，等离子体聚合的六甲基二硅醚软膜具有硬度低、柔软以及易塑性的特点，可以通过等离子体化学气相沉积法得到，不会增加制程难度。
S30，利用特定模具，对位于所述OLED发光层30表面的所述光萃取膜层40进行纳米压印处理，形成微透镜阵列42。
具体的，所述S30还包括：
利用特定模具，对位于所述OLED发光层30表面的所述光萃取膜层40进行纳米压印处理，形成微透镜阵列42，所述光萃取膜层40未经过纳米压印处理的部分为第一光萃取膜层41；所述微透镜阵列42具有特殊尺寸和特定形状，所述微透镜阵列42包括一个以上的微透镜421，每一所述微透镜421呈阵列排布，所述微透镜421的形状为球形或椭球形；每一所述微透镜421的尺寸和形状可根据实际需要调整磨具得到，如图4C所示。
其中，所述微透镜阵列42位于所述OLED发光层30表面，所述OLED发光层30包括蓝色子像素区域发光层31、绿色子像素区域发光层32以及红色子像素区域发光层33，所述蓝色子像素区域发光层31上的所述微透镜阵列42的尺寸大小与所述红色子像素区域发光层33上的所述微透镜阵列42的尺寸大小不同，所述微透镜阵列42的尺寸大小可根据所述蓝色子像素区域发光层31、所述绿色子像素区域发光层32以及所述红色子像素区域发光层33中各自的实际出光效率进行调整；所述微透镜阵列42距离所述所述OLED发光层30表面极近，光萃取效果更佳。
S40，通过原子沉积工艺在所述光萃取膜层40的表面镀上一层无机保护膜层50。
具体的，所述S40还包括：
利用原子沉积工艺在所述光萃取膜层40的表面镀上一层无机保护膜层50，所述无机保护膜层50为二氧化锆或二氧化钛，所述无机保护膜层50的厚度小于50纳米，所述无机保护膜层50具有高折射率并沿着所述光萃取膜层40的轮廓生长；所述无机保护膜层50能够保持所述微透镜421的形貌并增强所述微透镜421的厚度；高折射率的无机膜层会进一步增强所述光萃取膜层40的光萃取能力，如图4D所示。
S50，在位于所述OLED发光层30以及所述无机保护膜层50的表面沉积出一封装膜层60并去除所述基板。
具体的，所述S50还包括：
在位于所述OLED发光层30以及所述无机保护膜层50的表面沉积出一封装膜层60，所述封装膜层60包括层叠设置的第一无机封装层、第一有机封装层以及第二无机封装层。所述第一无机封装层和所述第二无机封装层的材质均为氮化硅，所述有机封装层的材质为烯酸酯类聚合物；最后，去除所述基板，得到所述OLED显示装置，如图4E所示。
本方法利用化学气相沉积法制备低聚和度的等离子体聚合的六甲基二硅醚软膜材料特殊性，结合纳米压印技术以及原子沉积工艺成膜三维生长特殊性，引入微透镜阵列，从而达到提升OLED出光效率的目的。
本申请的有益效果为：本申请提供的OLED显示装置及其制作方法，通过纳米压印技术在OLED发光层的表面形成特定尺寸大小和特定排列顺序的微透镜阵列，然后再制备一层无机保护膜层，有利于提高微透镜阵列的光耦合效率，进一步提升OLED显示装置的出光效率。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (10)

  1. 一种OLED显示装置，其中，包括：
    柔性衬底；
    TFT层，位于所述柔性衬底上；
    OLED发光层，位于所述TFT层上；
    光萃取膜层，所述光萃取膜层包括第一光萃取膜层以及微透镜阵列，所述第一光萃取膜层位于所述TFT层上，所述微透镜阵列位于所述OLED发光层上；
    无机保护膜层，所述无机保护膜层设置于所述光萃取膜层的表面；
    封装膜层，位于所述OLED发光层以及所述无机保护膜层的表面。
  2. 根据权利要求1所述的OLED显示装置，其中，所述光萃取膜层为等离子体聚合的六甲基二硅醚软膜，所述光萃取膜层的厚度为1~2微米。
  3. 根据权利要求1所述的OLED显示装置，其中，所述微透镜阵列包括一个以上的微透镜，每一所述微透镜呈阵列排布。
  4. 根据权利要求3所述的OLED显示装置，其中，所述微透镜的形状为球形或椭圆形。
  5. 根据权利要求1所述的OLED显示装置，其中，所述无机保护膜层为二氧化锆或二氧化钛，所述无机保护膜层的厚度小于50纳米。
  6. 根据权利要求1所述的OLED显示装置，其中，所述封装膜层包括层叠设置的第一无机封装层、第一有机封装层以及第二无机封装层。
  7. 一种OLED显示装置的制备方法，其中，所述方法包括：
    S10，提供一基板，在所述基板的表面涂布一柔性衬底，之后在所述柔性衬底的表面制备TFT层，接着在所述TFT层的表面制备OLED发光层；
    S20，在所述TFT层以及所述OLED发光层的表面沉积一层光萃取膜层；
    S30，利用特定模具，对位于所述OLED发光层表面的所述光萃取膜层进行纳米压印处理，形成微透镜阵列；
    S40，通过原子沉积工艺在所述光萃取膜层的表面镀上一层无机保护膜层；
    S50，在位于所述OLED发光层以及所述无机保护膜层的表面沉积出一封装膜层并去除所述基板。
  8. 根据权利要求7所述的OLED显示装置的制备方法，其中，所述光萃取膜层为等离子体聚合的六甲基二硅醚软膜，所述光萃取膜层的厚度为1~2微米。
  9. 根据权利要求7所述的OLED显示装置的制备方法，其中，所述微透镜阵列包括一个以上的微透镜，每一所述微透镜呈阵列排布，所述微透镜的形状为球形或椭圆形。
  10. 根据权利要求7所述的OLED显示装置的制备方法，其中，所述无机保护膜层为二氧化锆或二氧化钛，所述无机保护膜层的厚度小于50纳米。
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