WO2020049732A1 - Boîtier étanche à l'air - Google Patents

Boîtier étanche à l'air Download PDF

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Publication number
WO2020049732A1
WO2020049732A1 PCT/JP2018/033284 JP2018033284W WO2020049732A1 WO 2020049732 A1 WO2020049732 A1 WO 2020049732A1 JP 2018033284 W JP2018033284 W JP 2018033284W WO 2020049732 A1 WO2020049732 A1 WO 2020049732A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal
cap
base plate
coating material
airtight package
Prior art date
Application number
PCT/JP2018/033284
Other languages
English (en)
Japanese (ja)
Inventor
啓信 南出
勝巳 宮脇
健一郎 長明
内海　博三
傑 間木
Original Assignee
三菱電機株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三菱電機株式会社 filed Critical 三菱電機株式会社
Priority to PCT/JP2018/033284 priority Critical patent/WO2020049732A1/fr
Priority to TW108106276A priority patent/TWI721376B/zh
Publication of WO2020049732A1 publication Critical patent/WO2020049732A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass

Definitions

  • the present invention relates to an airtight package.
  • a gold-plated metal cap is soldered to a metal base plate to which lead terminals and a semiconductor device are brazed (for example, see Patent Document 1).
  • Metal caps are more expensive than resin caps. Airtightness cannot be secured with a resin cap. Even metal caps require gold plating to ensure airtightness by soldering. However, gold plating makes it more expensive.
  • the present invention has been made to solve the above-described problems, and an object thereof is to obtain an inexpensive hermetic package.
  • An airtight package includes a metal base plate, a semiconductor device mounted on the metal base plate, a non-metal cap having a lower surface adhered to the metal base plate, and hermetically sealing the semiconductor device, A metal or inorganic coating material covering the non-metal cap.
  • the cost can be reduced by using an inexpensive non-metal cap.
  • Covering the non-metal cap with a coating material of a metal or an inorganic material enables airtightness. Thereby, a cheap airtight package can be obtained.
  • FIG. 2 is a plan view showing the inside of the airtight package according to the first embodiment. It is a perspective view which shows a lead terminal. It is a perspective view which shows a nonmetal cap. It is a side view which shows a mode that a nonmetal cap is attached. It is a side view which shows a mode that a nonmetal cap is attached.
  • FIG. 2 is a side view showing the airtight package according to the first embodiment.
  • FIG. 2 is a cross-sectional view illustrating the hermetic package according to the first embodiment.
  • FIG. 9 is a cross-sectional view illustrating an airtight package according to a second embodiment.
  • FIG. 13 is a cross-sectional view illustrating an airtight package according to a third embodiment.
  • FIG. 13 is a cross-sectional view illustrating an airtight package according to a fourth embodiment.
  • FIG. 15 is a cross-sectional view illustrating an airtight package according to a fifth embodiment.
  • FIG. 1 is a plan view showing the inside of the hermetic package according to the first embodiment.
  • a semiconductor device 2 and lead terminals 3 and 4 are mounted on a metal base plate 1.
  • the metal base plate 1 is made of a metal such as Cu or CuW alloy, and is plated with gold.
  • the semiconductor device 2 is a high-frequency high-frequency device in a microwave band or a millimeter wave band.
  • the semiconductor device 2 is fixed to the metal base plate 1 by soldering or the like.
  • the lead terminals 3 and 4 are connected to the gate terminal and the drain terminal of the semiconductor device 2 by gold wires 5 and 6, respectively. High frequency signals are transmitted between the outside of the package and the semiconductor device 2 by the lead terminals 3 and 4.
  • FIG. 2 is a perspective view showing a lead terminal.
  • the lead terminal 3 is obtained by attaching a metal lead 8 on an insulator 7.
  • the insulator 7 is a ceramic.
  • the metal lead 8 is a metal such as Cu or Kovar (FeNiCo alloy). The same applies to the structure of the lead terminal 4.
  • FIG. 3 is a perspective view showing a non-metallic cap.
  • the non-metal cap 9 is a resin molded cap made of PPA (polyphthalamide) or PPS (polyphenylene sulfide). On the side surfaces of the non-metal cap 9 facing each other, cutouts are provided in portions where the lead terminals 3 and 4 are arranged.
  • PPA polyphthalamide
  • PPS polyphenylene sulfide
  • FIGS. 4 and 5 are side views showing how the non-metal cap is attached.
  • the non-metal cap 9 covers the semiconductor device 2, and the lower surface of the non-metal cap 9 is adhered to the metal base plate 1 with the adhesive 10.
  • the adhesive 10 is an epoxy adhesive.
  • An insulator 11 is provided on the lead terminal 3.
  • FIG. 6 is a side view showing the airtight package according to the first embodiment.
  • FIG. 7 is a sectional view showing the hermetic package according to the first embodiment.
  • the metal of the coating material 12 is Pt, Ti, Ni, or the like, and the inorganic material is alumina.
  • the coating material 12 also covers the bonding portion between the metal base plate 1 and the non-metal cap 9. Thereby, the semiconductor device 2 is hermetically sealed. If the coating material 12 is metal, the inside of the non-metal cap 9 can be shielded at high frequency. If the coating material 12 is an inorganic material, it may cover the lead terminals 3 and 4.
  • the cost can be reduced by using the inexpensive nonmetallic cap 9.
  • Covering the non-metal cap 9 with a coating material 12 of a metal or inorganic material enables airtightness. Thereby, a cheap airtight package can be obtained.
  • FIG. FIG. 8 is a sectional view showing an airtight package according to the second embodiment.
  • the coating material 12 covers the outer surface and the lower surface of the non-metal cap 9.
  • the coating material 12 covers the lower surface of the non-metal cap 9 to enable airtightness. Thereby, a cheap airtight package can be obtained.
  • the coating material 12 is metal
  • the lower surface of the non-metal cap 9 may be soldered to the metal base plate 1 using solder as the adhesive 10.
  • FIG. 9 is a sectional view showing an airtight package according to the third embodiment.
  • the coating material 12 covers the inner surface and the lower surface of the non-metal cap 9. In this case, the same effect as in the second embodiment can be obtained.
  • FIG. 10 is a sectional view showing an airtight package according to the fourth embodiment.
  • the coating material 12 covers the inner surface, the outer surface, and the lower surface of the non-metal cap 9. In this case, the same effect as in the second embodiment can be obtained.
  • FIG. FIG. 11 is a sectional view showing an airtight package according to the fifth embodiment.
  • a cap 13 is provided instead of the non-metal cap 9 and the coating material 12 of the embodiment 1-4.
  • the cap 13 is formed by sequentially laminating a first resin layer 13a, a core layer 13b of a metal or inorganic material, and a second resin layer 13c. Also in this case, similarly to Embodiment 1-4, the cost can be suppressed and airtightness can be achieved, so that an inexpensive airtight package can be obtained.

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)

Abstract

Un dispositif à semi-conducteur (2) est monté sur une plaque de base métallique (1). La surface inférieure d'un couvercle non métallique (9) est liée à la plaque de base métallique (1), et le dispositif à semi-conducteur (2) est hermétiquement scellé. Un matériau de revêtement (12) de métal ou d'un matériau inorganique recouvre le couvercle non métallique (9).
PCT/JP2018/033284 2018-09-07 2018-09-07 Boîtier étanche à l'air WO2020049732A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/JP2018/033284 WO2020049732A1 (fr) 2018-09-07 2018-09-07 Boîtier étanche à l'air
TW108106276A TWI721376B (zh) 2018-09-07 2019-02-25 氣密封裝

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2018/033284 WO2020049732A1 (fr) 2018-09-07 2018-09-07 Boîtier étanche à l'air

Publications (1)

Publication Number Publication Date
WO2020049732A1 true WO2020049732A1 (fr) 2020-03-12

Family

ID=69722550

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/033284 WO2020049732A1 (fr) 2018-09-07 2018-09-07 Boîtier étanche à l'air

Country Status (2)

Country Link
TW (1) TWI721376B (fr)
WO (1) WO2020049732A1 (fr)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06181266A (ja) * 1992-12-11 1994-06-28 Mitsubishi Electric Corp 高周波帯ｉｃ用パッケージ
JP2000236045A (ja) * 1999-02-16 2000-08-29 Mitsubishi Electric Corp 高周波パッケージ
JP2001057400A (ja) * 1999-08-18 2001-02-27 Murata Mfg Co Ltd 金属キャップの絶縁膜形成方法
JP2008177610A (ja) * 2008-04-07 2008-07-31 Matsushita Electric Ind Co Ltd 電子素子パッケージ
JP2014183359A (ja) * 2013-03-18 2014-09-29 Nippon Dempa Kogyo Co Ltd 水晶振動子
WO2016199634A1 (fr) * 2015-06-10 2016-12-15 三菱電機株式会社 Dispositif à semi-conducteur et son procédé de fabrication

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1323441C (zh) * 2001-10-12 2007-06-27 日亚化学工业株式会社 发光装置及其制造方法
US7224000B2 (en) * 2002-08-30 2007-05-29 Lumination, Llc Light emitting diode component
JP4134893B2 (ja) * 2003-12-05 2008-08-20 松下電器産業株式会社 電子素子パッケージ
JP2007150235A (ja) * 2005-10-27 2007-06-14 Daishinku Corp 気密封止型電子部品
KR101307547B1 (ko) * 2006-11-27 2013-09-12 엘지디스플레이 주식회사 유기 발광 다이오드 표시장치
KR101700989B1 (ko) * 2009-06-24 2017-01-31 미쓰비시 가가꾸 가부시키가이샤 유기 전자 디바이스 및 그 제조 방법
JP5433398B2 (ja) * 2009-12-22 2014-03-05 パナソニック株式会社 発光装置
KR102001815B1 (ko) * 2011-11-29 2019-07-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 밀봉체의 제작 방법 및 발광 장치의 제작 방법

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06181266A (ja) * 1992-12-11 1994-06-28 Mitsubishi Electric Corp 高周波帯ｉｃ用パッケージ
JP2000236045A (ja) * 1999-02-16 2000-08-29 Mitsubishi Electric Corp 高周波パッケージ
JP2001057400A (ja) * 1999-08-18 2001-02-27 Murata Mfg Co Ltd 金属キャップの絶縁膜形成方法
JP2008177610A (ja) * 2008-04-07 2008-07-31 Matsushita Electric Ind Co Ltd 電子素子パッケージ
JP2014183359A (ja) * 2013-03-18 2014-09-29 Nippon Dempa Kogyo Co Ltd 水晶振動子
WO2016199634A1 (fr) * 2015-06-10 2016-12-15 三菱電機株式会社 Dispositif à semi-conducteur et son procédé de fabrication

Also Published As

Publication number Publication date
TW202011540A (zh) 2020-03-16
TWI721376B (zh) 2021-03-11

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