WO2020049732A1 - Airtight package - Google Patents

Airtight package Download PDF

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Publication number
WO2020049732A1
WO2020049732A1 PCT/JP2018/033284 JP2018033284W WO2020049732A1 WO 2020049732 A1 WO2020049732 A1 WO 2020049732A1 JP 2018033284 W JP2018033284 W JP 2018033284W WO 2020049732 A1 WO2020049732 A1 WO 2020049732A1
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Prior art keywords
metal
cap
base plate
coating material
airtight package
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PCT/JP2018/033284
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French (fr)
Japanese (ja)
Inventor
啓信 南出
勝巳 宮脇
健一郎 長明
内海　博三
傑 間木
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三菱電機株式会社
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Priority to PCT/JP2018/033284 priority Critical patent/WO2020049732A1/en
Priority to TW108106276A priority patent/TWI721376B/en
Publication of WO2020049732A1 publication Critical patent/WO2020049732A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H01L23/08—Containers; Seals characterised by the material of the container or its electrical properties the material being an electrical insulator, e.g. glass

Definitions

  • the present invention relates to an airtight package.
  • a gold-plated metal cap is soldered to a metal base plate to which lead terminals and a semiconductor device are brazed (for example, see Patent Document 1).
  • Metal caps are more expensive than resin caps. Airtightness cannot be secured with a resin cap. Even metal caps require gold plating to ensure airtightness by soldering. However, gold plating makes it more expensive.
  • the present invention has been made to solve the above-described problems, and an object thereof is to obtain an inexpensive hermetic package.
  • An airtight package includes a metal base plate, a semiconductor device mounted on the metal base plate, a non-metal cap having a lower surface adhered to the metal base plate, and hermetically sealing the semiconductor device, A metal or inorganic coating material covering the non-metal cap.
  • the cost can be reduced by using an inexpensive non-metal cap.
  • Covering the non-metal cap with a coating material of a metal or an inorganic material enables airtightness. Thereby, a cheap airtight package can be obtained.
  • FIG. 2 is a plan view showing the inside of the airtight package according to the first embodiment. It is a perspective view which shows a lead terminal. It is a perspective view which shows a nonmetal cap. It is a side view which shows a mode that a nonmetal cap is attached. It is a side view which shows a mode that a nonmetal cap is attached.
  • FIG. 2 is a side view showing the airtight package according to the first embodiment.
  • FIG. 2 is a cross-sectional view illustrating the hermetic package according to the first embodiment.
  • FIG. 9 is a cross-sectional view illustrating an airtight package according to a second embodiment.
  • FIG. 13 is a cross-sectional view illustrating an airtight package according to a third embodiment.
  • FIG. 13 is a cross-sectional view illustrating an airtight package according to a fourth embodiment.
  • FIG. 15 is a cross-sectional view illustrating an airtight package according to a fifth embodiment.
  • FIG. 1 is a plan view showing the inside of the hermetic package according to the first embodiment.
  • a semiconductor device 2 and lead terminals 3 and 4 are mounted on a metal base plate 1.
  • the metal base plate 1 is made of a metal such as Cu or CuW alloy, and is plated with gold.
  • the semiconductor device 2 is a high-frequency high-frequency device in a microwave band or a millimeter wave band.
  • the semiconductor device 2 is fixed to the metal base plate 1 by soldering or the like.
  • the lead terminals 3 and 4 are connected to the gate terminal and the drain terminal of the semiconductor device 2 by gold wires 5 and 6, respectively. High frequency signals are transmitted between the outside of the package and the semiconductor device 2 by the lead terminals 3 and 4.
  • FIG. 2 is a perspective view showing a lead terminal.
  • the lead terminal 3 is obtained by attaching a metal lead 8 on an insulator 7.
  • the insulator 7 is a ceramic.
  • the metal lead 8 is a metal such as Cu or Kovar (FeNiCo alloy). The same applies to the structure of the lead terminal 4.
  • FIG. 3 is a perspective view showing a non-metallic cap.
  • the non-metal cap 9 is a resin molded cap made of PPA (polyphthalamide) or PPS (polyphenylene sulfide). On the side surfaces of the non-metal cap 9 facing each other, cutouts are provided in portions where the lead terminals 3 and 4 are arranged.
  • PPA polyphthalamide
  • PPS polyphenylene sulfide
  • FIGS. 4 and 5 are side views showing how the non-metal cap is attached.
  • the non-metal cap 9 covers the semiconductor device 2, and the lower surface of the non-metal cap 9 is adhered to the metal base plate 1 with the adhesive 10.
  • the adhesive 10 is an epoxy adhesive.
  • An insulator 11 is provided on the lead terminal 3.
  • FIG. 6 is a side view showing the airtight package according to the first embodiment.
  • FIG. 7 is a sectional view showing the hermetic package according to the first embodiment.
  • the metal of the coating material 12 is Pt, Ti, Ni, or the like, and the inorganic material is alumina.
  • the coating material 12 also covers the bonding portion between the metal base plate 1 and the non-metal cap 9. Thereby, the semiconductor device 2 is hermetically sealed. If the coating material 12 is metal, the inside of the non-metal cap 9 can be shielded at high frequency. If the coating material 12 is an inorganic material, it may cover the lead terminals 3 and 4.
  • the cost can be reduced by using the inexpensive nonmetallic cap 9.
  • Covering the non-metal cap 9 with a coating material 12 of a metal or inorganic material enables airtightness. Thereby, a cheap airtight package can be obtained.
  • FIG. FIG. 8 is a sectional view showing an airtight package according to the second embodiment.
  • the coating material 12 covers the outer surface and the lower surface of the non-metal cap 9.
  • the coating material 12 covers the lower surface of the non-metal cap 9 to enable airtightness. Thereby, a cheap airtight package can be obtained.
  • the coating material 12 is metal
  • the lower surface of the non-metal cap 9 may be soldered to the metal base plate 1 using solder as the adhesive 10.
  • FIG. 9 is a sectional view showing an airtight package according to the third embodiment.
  • the coating material 12 covers the inner surface and the lower surface of the non-metal cap 9. In this case, the same effect as in the second embodiment can be obtained.
  • FIG. 10 is a sectional view showing an airtight package according to the fourth embodiment.
  • the coating material 12 covers the inner surface, the outer surface, and the lower surface of the non-metal cap 9. In this case, the same effect as in the second embodiment can be obtained.
  • FIG. FIG. 11 is a sectional view showing an airtight package according to the fifth embodiment.
  • a cap 13 is provided instead of the non-metal cap 9 and the coating material 12 of the embodiment 1-4.
  • the cap 13 is formed by sequentially laminating a first resin layer 13a, a core layer 13b of a metal or inorganic material, and a second resin layer 13c. Also in this case, similarly to Embodiment 1-4, the cost can be suppressed and airtightness can be achieved, so that an inexpensive airtight package can be obtained.

Abstract

A semiconductor device (2) is mounted on a metal base plate (1). The bottom surface of a non-metal cap (9) is bonded to the metal base plate (1), and the semiconductor device (2) is hermetically sealed. A coating material (12) of metal or an inorganic material covers the non-metal cap (9).

Description

気密パッケージAirtight package
　本発明は、気密パッケージに関する。 (4) The present invention relates to an airtight package.
　従来の高周波用高出力デバイス用の気密パッケージでは、リード端子と半導体装置をロウ付けした金属ベース板に、金メッキを施した金属キャップをはんだ付けしていた（例えば、特許文献１参照）。 In a conventional hermetic package for high-frequency high-power devices, a gold-plated metal cap is soldered to a metal base plate to which lead terminals and a semiconductor device are brazed (for example, see Patent Document 1).
日本特開２０００－２３６０４５号公報Japanese Patent Application Laid-Open No. 2000-236045
　樹脂キャップに比べて金属キャップは高価である。樹脂キャップでは気密を確保できない。金属キャップでもはんだ付けで気密を確保するために金メッキが必要である。しかし、金メッキを施すことで更に高価になる。 金属 Metal caps are more expensive than resin caps. Airtightness cannot be secured with a resin cap. Even metal caps require gold plating to ensure airtightness by soldering. However, gold plating makes it more expensive.
　本発明は、上述のような課題を解決するためになされたもので、その目的は安価な気密パッケージを得るものである。 The present invention has been made to solve the above-described problems, and an object thereof is to obtain an inexpensive hermetic package.
　本発明に係る気密パッケージは、金属ベース板と、前記金属ベース板の上に実装された半導体装置と、下面が前記金属ベース板に接着され、前記半導体装置を気密封止する非金属キャップと、前記非金属キャップを覆う金属又は無機材のコーティング材とを備えることを特徴とする。 An airtight package according to the present invention includes a metal base plate, a semiconductor device mounted on the metal base plate, a non-metal cap having a lower surface adhered to the metal base plate, and hermetically sealing the semiconductor device, A metal or inorganic coating material covering the non-metal cap.
　本発明では、安価な非金属キャップを用いることで費用を抑制できる。金属又は無機材のコーティング材で非金属キャップを覆うことで気密が可能となる。これにより、安価な気密パッケージを得ることができる。 According to the present invention, the cost can be reduced by using an inexpensive non-metal cap. Covering the non-metal cap with a coating material of a metal or an inorganic material enables airtightness. Thereby, a cheap airtight package can be obtained.
実施の形態１に係る気密パッケージの内部を示す平面図である。FIG. 2 is a plan view showing the inside of the airtight package according to the first embodiment. リード端子を示す斜視図である。It is a perspective view which shows a lead terminal. 非金属キャップを示す斜視図である。It is a perspective view which shows a nonmetal cap. 非金属キャップを取り付ける様子を示す側面図である。It is a side view which shows a mode that a nonmetal cap is attached. 非金属キャップを取り付ける様子を示す側面図である。It is a side view which shows a mode that a nonmetal cap is attached. 実施の形態１に係る気密パッケージを示す側面図である。FIG. 2 is a side view showing the airtight package according to the first embodiment. 実施の形態１に係る気密パッケージを示す断面図である。FIG. 2 is a cross-sectional view illustrating the hermetic package according to the first embodiment. 実施の形態２に係る気密パッケージを示す断面図である。FIG. 9 is a cross-sectional view illustrating an airtight package according to a second embodiment. 実施の形態３に係る気密パッケージを示す断面図である。FIG. 13 is a cross-sectional view illustrating an airtight package according to a third embodiment. 実施の形態４に係る気密パッケージを示す断面図である。FIG. 13 is a cross-sectional view illustrating an airtight package according to a fourth embodiment. 実施の形態５に係る気密パッケージを示す断面図である。FIG. 15 is a cross-sectional view illustrating an airtight package according to a fifth embodiment.
　実施の形態に係る気密パッケージについて図面を参照して説明する。同じ又は対応する構成要素には同じ符号を付し、説明の繰り返しを省略する場合がある。 (5) An airtight package according to an embodiment will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and description thereof may not be repeated.
実施の形態１．
　図１は、実施の形態１に係る気密パッケージの内部を示す平面図である。金属ベース板１の上に半導体装置２とリード端子３，４が実装されている。金属ベース板１はＣｕ又はＣｕＷ合金などの金属からなり、金メッキが施されている。半導体装置２は、マイクロ波帯又はミリ波帯の高周波用高出力デバイスである。半導体装置２は金属ベース板１にはんだ付けなどにより固定されている。 Embodiment 1 FIG.
FIG. 1 is a plan view showing the inside of the hermetic package according to the first embodiment. A semiconductor device 2 and lead terminals 3 and 4 are mounted on a metal base plate 1. The metal base plate 1 is made of a metal such as Cu or CuW alloy, and is plated with gold. The semiconductor device 2 is a high-frequency high-frequency device in a microwave band or a millimeter wave band. The semiconductor device 2 is fixed to the metal base plate 1 by soldering or the like.
　リード端子３，４は金ワイヤ５，６によりそれぞれ半導体装置２のゲート端子とドレイン端子に接続されている。リード端子３，４によりパッケージ外部と半導体装置２との間で高周波信号が伝達される。 The lead terminals 3 and 4 are connected to the gate terminal and the drain terminal of the semiconductor device 2 by gold wires 5 and 6, respectively. High frequency signals are transmitted between the outside of the package and the semiconductor device 2 by the lead terminals 3 and 4.
　図２は、リード端子を示す斜視図である。リード端子３は絶縁体７の上に金属リード８を付けたものである。絶縁体７はセラミックである。金属リード８はＣｕ又はコバール（ＦｅＮｉＣｏ合金）などの金属である。リード端子４の構造も同様である。 FIG. 2 is a perspective view showing a lead terminal. The lead terminal 3 is obtained by attaching a metal lead 8 on an insulator 7. The insulator 7 is a ceramic. The metal lead 8 is a metal such as Cu or Kovar (FeNiCo alloy). The same applies to the structure of the lead terminal 4.
　図３は、非金属キャップを示す斜視図である。非金属キャップ９はＰＰＡ（ポリフタルアミド）又はＰＰＳ（ポリフェニレンサルファイド）などからなる樹脂成型キャップである。非金属キャップ９の互いに対向する側面において、リード端子３，４が配置される部分に切り欠きが設けられている。 FIG. 3 is a perspective view showing a non-metallic cap. The non-metal cap 9 is a resin molded cap made of PPA (polyphthalamide) or PPS (polyphenylene sulfide). On the side surfaces of the non-metal cap 9 facing each other, cutouts are provided in portions where the lead terminals 3 and 4 are arranged.
　図４及び図５は、非金属キャップを取り付ける様子を示す側面図である。非金属キャップ９が半導体装置２を覆って、非金属キャップ９の下面が金属ベース板１に接着剤１０により接着される。接着剤１０はエポキシ系接着剤である。リード端子３の上に絶縁体１１が設けられている。 FIGS. 4 and 5 are side views showing how the non-metal cap is attached. The non-metal cap 9 covers the semiconductor device 2, and the lower surface of the non-metal cap 9 is adhered to the metal base plate 1 with the adhesive 10. The adhesive 10 is an epoxy adhesive. An insulator 11 is provided on the lead terminal 3.
　図６は、実施の形態１に係る気密パッケージを示す側面図である。図７は、実施の形態１に係る気密パッケージを示す断面図である。非金属キャップ９の接着後に非金属キャップ９を金属又は無機材のコーティング材１２で覆う。コーティング材１２の金属はＰｔ，Ｔｉ，Ｎｉなどであり、無機材はアルミナである。コーティング材１２は、金属ベース板１と非金属キャップ９の接着部分も覆っている。これにより、半導体装置２が気密封止される。なお、コーティング材１２が金属であれば、非金属キャップ９の内部を高周波的にシールドすることができる。コーティング材１２が無機材であればリード端子３，４を覆ってもよい。 FIG. 6 is a side view showing the airtight package according to the first embodiment. FIG. 7 is a sectional view showing the hermetic package according to the first embodiment. After the non-metal cap 9 is bonded, the non-metal cap 9 is covered with a metal or inorganic coating material 12. The metal of the coating material 12 is Pt, Ti, Ni, or the like, and the inorganic material is alumina. The coating material 12 also covers the bonding portion between the metal base plate 1 and the non-metal cap 9. Thereby, the semiconductor device 2 is hermetically sealed. If the coating material 12 is metal, the inside of the non-metal cap 9 can be shielded at high frequency. If the coating material 12 is an inorganic material, it may cover the lead terminals 3 and 4.
　以上説明したように、本実施の形態では、安価な非金属キャップ９を用いることで費用を抑制できる。金属又は無機材のコーティング材１２で非金属キャップ９を覆うことで気密が可能となる。これにより、安価な気密パッケージを得ることができる。 As described above, in the present embodiment, the cost can be reduced by using the inexpensive nonmetallic cap 9. Covering the non-metal cap 9 with a coating material 12 of a metal or inorganic material enables airtightness. Thereby, a cheap airtight package can be obtained.
実施の形態２．
　図８は、実施の形態２に係る気密パッケージを示す断面図である。コーティング材１２は非金属キャップ９の外面と下面を覆う。特に、コーティング材１２が非金属キャップ９の下面を覆うことで気密が可能となる。これにより、安価な気密パッケージを得ることができる。また、コーティング材１２が金属であれば、接着剤１０としてはんだを用いて非金属キャップ９の下面を金属ベース板１にはんだ付けしてもよい。 Embodiment 2 FIG.
FIG. 8 is a sectional view showing an airtight package according to the second embodiment. The coating material 12 covers the outer surface and the lower surface of the non-metal cap 9. In particular, the coating material 12 covers the lower surface of the non-metal cap 9 to enable airtightness. Thereby, a cheap airtight package can be obtained. If the coating material 12 is metal, the lower surface of the non-metal cap 9 may be soldered to the metal base plate 1 using solder as the adhesive 10.
実施の形態３．
　図９は、実施の形態３に係る気密パッケージを示す断面図である。コーティング材１２は非金属キャップ９の内面と下面を覆う。この場合でも実施の形態２と同様の効果を得ることができる。 Embodiment 3 FIG.
FIG. 9 is a sectional view showing an airtight package according to the third embodiment. The coating material 12 covers the inner surface and the lower surface of the non-metal cap 9. In this case, the same effect as in the second embodiment can be obtained.
実施の形態４．
　図１０は、実施の形態４に係る気密パッケージを示す断面図である。コーティング材１２は非金属キャップ９の内面と外面と下面を覆う。この場合でも実施の形態２と同様の効果を得ることができる。 Embodiment 4 FIG.
FIG. 10 is a sectional view showing an airtight package according to the fourth embodiment. The coating material 12 covers the inner surface, the outer surface, and the lower surface of the non-metal cap 9. In this case, the same effect as in the second embodiment can be obtained.
実施の形態５．
　図１１は、実施の形態５に係る気密パッケージを示す断面図である。実施の形態１－４の非金属キャップ９とコーティング材１２の代わりに、本実施の形態ではキャップ１３が設けられている。キャップ１３は、第１の樹脂層１３ａ、金属又は無機材のコア層１３ｂ、及び第２の樹脂層１３ｃを順に積層したものである。この場合でも実施の形態１－４と同様に、費用を抑制でき、気密が可能となるため、安価な気密パッケージを得ることができる。 Embodiment 5 FIG.
FIG. 11 is a sectional view showing an airtight package according to the fifth embodiment. In this embodiment, a cap 13 is provided instead of the non-metal cap 9 and the coating material 12 of the embodiment 1-4. The cap 13 is formed by sequentially laminating a first resin layer 13a, a core layer 13b of a metal or inorganic material, and a second resin layer 13c. Also in this case, similarly to Embodiment 1-4, the cost can be suppressed and airtightness can be achieved, so that an inexpensive airtight package can be obtained.
１　金属ベース板、２　半導体装置、９　非金属キャップ、１２　コーティング材、１３　キャップ、１３ａ　第１の樹脂層、１３ｂ　コア層、１３ｃ　第２の樹脂層 1 metal base plate, 2 semiconductor device, 9 non-metal cap, 12 coating material, 13 cap, 13a first resin layer, 13b core layer, 13c second resin layer

Claims (8)

  1. 　金属ベース板と、
    　前記金属ベース板の上に実装された半導体装置と、
    　下面が前記金属ベース板に接着され、前記半導体装置を気密封止する非金属キャップと、
    　前記非金属キャップを覆う金属又は無機材のコーティング材とを備えることを特徴とする気密パッケージ。     A metal base plate,
    A semiconductor device mounted on the metal base plate;
    A non-metal cap whose lower surface is adhered to the metal base plate and hermetically seals the semiconductor device;
    A hermetic package comprising: a metal or inorganic coating material covering the non-metallic cap.
  2. 　前記コーティング材は前記金属ベース板と前記非金属キャップの接着部分も覆っていることを特徴とする請求項１に記載の気密パッケージ。 The airtight package according to claim 1, wherein the coating material also covers an adhesive portion between the metal base plate and the non-metal cap.
  3. 　前記コーティング材は前記非金属キャップの前記下面を覆うことを特徴とする請求項１に記載の気密パッケージ。 The airtight package according to claim 1, wherein the coating material covers the lower surface of the non-metal cap.
  4. 　前記コーティング材は金属であり、
    　前記非金属キャップの前記下面が前記金属ベース板にはんだ付けされていることを特徴とする請求項３に記載の気密パッケージ。     The coating material is metal;
    The airtight package according to claim 3, wherein the lower surface of the non-metallic cap is soldered to the metal base plate.
  5. 　前記コーティング材は非金属キャップの外面を覆うことを特徴とする請求項３又は４に記載の気密パッケージ。 The airtight package according to claim 3, wherein the coating material covers an outer surface of the non-metal cap.
  6. 　前記コーティング材は非金属キャップの内面を覆うことを特徴とする請求項３又は４に記載の気密パッケージ。 The airtight package according to claim 3, wherein the coating material covers an inner surface of the non-metal cap.
  7. 　前記コーティング材は非金属キャップの内面と外面を覆うことを特徴とする請求項３又は４に記載の気密パッケージ。 The airtight package according to claim 3, wherein the coating material covers an inner surface and an outer surface of the non-metal cap.
  8. 　金属ベース板と、
    　前記金属ベース板の上に実装された半導体装置と、
    　下面が前記金属ベース板に接着され、前記半導体装置を気密封止するキャップとを備え、
    　前記キャップは、第１の樹脂層、金属又は無機材のコア層、及び第２の樹脂層を順に積層したものであることを特徴とする気密パッケージ。     A metal base plate,
    A semiconductor device mounted on the metal base plate;
    A lower surface is adhered to the metal base plate, and a cap that hermetically seals the semiconductor device;
    The airtight package, wherein the cap is formed by sequentially laminating a first resin layer, a core layer of a metal or an inorganic material, and a second resin layer.
PCT/JP2018/033284 2018-09-07 2018-09-07 Airtight package WO2020049732A1 (en)

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PCT/JP2018/033284 WO2020049732A1 (en) 2018-09-07 2018-09-07 Airtight package
TW108106276A TWI721376B (en) 2018-09-07 2019-02-25 Hermetically sealed

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Application Number Priority Date Filing Date Title
PCT/JP2018/033284 WO2020049732A1 (en) 2018-09-07 2018-09-07 Airtight package

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