WO2020048981A3 - Verfahren zur regelung der deckentemperatur eines cvd-reaktors - Google Patents

Verfahren zur regelung der deckentemperatur eines cvd-reaktors Download PDF

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Publication number
WO2020048981A3
WO2020048981A3 PCT/EP2019/073464 EP2019073464W WO2020048981A3 WO 2020048981 A3 WO2020048981 A3 WO 2020048981A3 EP 2019073464 W EP2019073464 W EP 2019073464W WO 2020048981 A3 WO2020048981 A3 WO 2020048981A3
Authority
WO
WIPO (PCT)
Prior art keywords
process chamber
cvd reactor
chamber ceiling
ceiling
controlling
Prior art date
Application number
PCT/EP2019/073464
Other languages
English (en)
French (fr)
Other versions
WO2020048981A2 (de
Inventor
Peter Sebald Lauffer
Original Assignee
Aixtron Se
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron Se filed Critical Aixtron Se
Priority to CN201980066051.5A priority Critical patent/CN112969815B/zh
Priority to KR1020217010036A priority patent/KR20210049168A/ko
Priority to JP2021512635A priority patent/JP7439056B2/ja
Priority to US17/250,809 priority patent/US11713505B2/en
Priority to EP19765977.4A priority patent/EP3847293A2/de
Publication of WO2020048981A2 publication Critical patent/WO2020048981A2/de
Publication of WO2020048981A3 publication Critical patent/WO2020048981A3/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4411—Cooling of the reaction chamber walls
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C23C16/466—Cooling of the substrate using thermal contact gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zum Einrichten oder zum Betrieb eines CVD-Reaktors sowie einen CVD-Reaktor zur Durchführung des Verfahrens, bei dem ein oder mehrere Schichten auf ein oder mehrere Substrate abgeschieden werden können. Ein Suszeptor (2) wird mittels einer Heizeinrichtung (3) beheizt. Wärme wird vom Suszeptor (2) durch eine Prozesskammer (4) hin zu einer Prozesskammerdecke (1), durch die Prozesskammerdecke (1) hindurch und von der Prozesskammerdecke (1) durch einen Spaltabstandsraum (5) zu einem Wärmeableitkörper (6) transportiert. Die Temperatur der Prozesskammerdecke (1) wird zumindest an zwei unterschiedlichen azimutalen Winkelpositionen um ein Zentrum (Z) der Prozesskammer (4) gemessen. Die Messstellen beziehungsweise Zonen (8, 8', 8'', 8''') haben denselben radialen Abstand (R) zum Zentrum (Z) der Prozesskammer (4). Aus diesen zumindest zwei Temperaturmesswerten wird ein Mittelwert oder ein Differenzwert gemessen.
PCT/EP2019/073464 2018-09-07 2019-09-03 Verfahren zum einrichten oder zum betrieb eines cvd-reaktors WO2020048981A2 (de)

Priority Applications (5)

Application Number Priority Date Filing Date Title
CN201980066051.5A CN112969815B (zh) 2018-09-07 2019-09-03 用于调节cvd反应器的顶部温度的方法
KR1020217010036A KR20210049168A (ko) 2018-09-07 2019-09-03 Cvd 반응기를 설정 또는 작동시키기 위한 방법
JP2021512635A JP7439056B2 (ja) 2018-09-07 2019-09-03 Ｃｖｄリアクタの設定又は稼動方法
US17/250,809 US11713505B2 (en) 2018-09-07 2019-09-03 Device and method for controlling the ceiling temperature of a CVD reactor
EP19765977.4A EP3847293A2 (de) 2018-09-07 2019-09-03 Verfahren zur regelung der deckentemperatur eines cvd-reaktors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018121854.0A DE102018121854A1 (de) 2018-09-07 2018-09-07 Verfahren zum Einrichten oder zum Betrieb eines CVD-Reaktors
DE102018121854.0 2018-09-07

Publications (2)

Publication Number Publication Date
WO2020048981A2 WO2020048981A2 (de) 2020-03-12
WO2020048981A3 true WO2020048981A3 (de) 2020-05-14

Family

ID=67909369

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2019/073464 WO2020048981A2 (de) 2018-09-07 2019-09-03 Verfahren zum einrichten oder zum betrieb eines cvd-reaktors

Country Status (8)

Country Link
US (1) US11713505B2 (de)
EP (1) EP3847293A2 (de)
JP (1) JP7439056B2 (de)
KR (1) KR20210049168A (de)
CN (1) CN112969815B (de)
DE (1) DE102018121854A1 (de)
TW (1) TW202031925A (de)
WO (1) WO2020048981A2 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102018121854A1 (de) * 2018-09-07 2020-03-12 Aixtron Se Verfahren zum Einrichten oder zum Betrieb eines CVD-Reaktors
US11842907B2 (en) 2020-07-08 2023-12-12 Applied Materials, Inc. Spot heating by moving a beam with horizontal rotary motion
CN115838917A (zh) * 2021-11-24 2023-03-24 无锡先为科技有限公司 成膜装置

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JP2008195995A (ja) * 2007-02-09 2008-08-28 Matsushita Electric Ind Co Ltd 気相成長装置
DE102010000554A1 (de) * 2009-03-16 2010-09-30 Aixtron Ag MOCVD-Reaktor mit einer örtlich verschieden an ein Wärmeableitorgan angekoppelten Deckenplatte
JP2013251442A (ja) * 2012-06-01 2013-12-12 Sharp Corp 気相成長装置および窒化物半導体発光素子の製造方法
US20150090693A1 (en) * 2013-10-02 2015-04-02 Nuflare Technology, Inc. Film formation apparatus and film formation method

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Also Published As

Publication number Publication date
KR20210049168A (ko) 2021-05-04
WO2020048981A2 (de) 2020-03-12
US20210310120A1 (en) 2021-10-07
EP3847293A2 (de) 2021-07-14
CN112969815B (zh) 2024-04-30
DE102018121854A1 (de) 2020-03-12
CN112969815A (zh) 2021-06-15
TW202031925A (zh) 2020-09-01
JP2021536530A (ja) 2021-12-27
JP7439056B2 (ja) 2024-02-27
US11713505B2 (en) 2023-08-01

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