WO2020042358A1 - 触控阵列基板以及显示装置 - Google Patents

触控阵列基板以及显示装置 Download PDF

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Publication number
WO2020042358A1
WO2020042358A1 PCT/CN2018/114249 CN2018114249W WO2020042358A1 WO 2020042358 A1 WO2020042358 A1 WO 2020042358A1 CN 2018114249 W CN2018114249 W CN 2018114249W WO 2020042358 A1 WO2020042358 A1 WO 2020042358A1
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WO
WIPO (PCT)
Prior art keywords
touch
electrode
sub
region
pixel electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2018/114249
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English (en)
French (fr)
Inventor
黄耀立
贺兴龙
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Application filed by Wuhan China Star Optoelectronics Technology Co Ltd filed Critical Wuhan China Star Optoelectronics Technology Co Ltd
Priority to US16/489,400 priority Critical patent/US11163388B1/en
Publication of WO2020042358A1 publication Critical patent/WO2020042358A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes

Definitions

  • the present application relates to the field of touch display, and in particular, to a touch array substrate and a display device.
  • the display device has been widely integrated with a touch screen (In-cell panel, touch array substrate).
  • the touch electrodes used by the touch screen to sense the touch position are all integrated into the display device to make the display touch panel thinner and lighter overall.
  • the touch layer of the In-cell panel is a common display Vcom layer.
  • the original Vcom layer is divided into several touch electrodes (generally rectangular) of similar shape and size.
  • the control wire is connected to the TDDI chip (that is, the touch chip, IC).
  • the touch wire that is close to the TDDI chip needs a short touch wire, the resistance R of the touch wire is small, and the touch electrode that is far from the TDDI chip needs the touch.
  • the longer the control wire the greater the resistance R of the touch wire.
  • the size and shape of each touch electrode are similar, so the capacitance C of the touch electrodes is similar.
  • the RC loading of the touch electrode shows inconsistent distance (R * C The bigger the RC loading, the bigger).
  • the RC loading at the far IC side due to the small size, although the RC loading at the far IC side has become larger, the IC can barely drive.
  • the touch electrodes on the far IC side require longer touch conductive lines, larger R values, and larger touch electrode areas on large-sized panels, and larger C values, which can lead to RC
  • the loading exceeds the driving range of the IC, which in turn makes it difficult or impossible to drive the touch electrodes on the far IC side.
  • the conventional touch array substrate has a technical problem that the touch electrodes at the far IC end are difficult to drive or cannot be driven.
  • the present application provides a touch array substrate and a display device to solve the technical problem that the existing touch array substrate has difficulty or inability to drive the touch electrodes at the far IC end.
  • An embodiment of the present application provides a touch array substrate including a base substrate, a thin film transistor structure layer provided on the base substrate, and a thin film transistor TFT structure layer provided on the base substrate.
  • the thin film transistor structure layer forms a gate line and a source line that are stacked, and the touch electrode layer Forming a touch electrode, the touch wire layer forming a touch wire, and electrically connecting to the corresponding touch electrode through the insulating layer, and the pixel electrode layer forming a pixel electrode;
  • the touch array substrate includes a touch function area and a touch chip disposed outside the touch function area, and the touch function area is provided with a plurality of touch units; the touch unit includes touch Electrodes, touch wires corresponding to the touch electrodes, gate lines, source lines, and pixel electrodes in corresponding areas of the touch electrodes; the touch unit is electrically connected to the touch wires through the touch wires Touch chip
  • the product of the touch lead resistance value and the touch electrode capacitance value of the multiple touch units is a fixed value.
  • the touch electrode capacitance value includes the capacitance value between the touch electrode and the pixel electrode, the touch electrode and the grid.
  • a total area of a pixel electrode in the touch unit gradually decreases.
  • the area of each pixel electrode in the touch unit gradually decreases in a direction away from the touch chip.
  • the grayscale brightness of the touch unit gradually increases in a direction away from the touch chip.
  • a total area of source lines in the touch unit gradually decreases.
  • the line width of the source lines in the touch unit gradually decreases in a direction away from the touch chip.
  • the touch functional area in a direction away from the touch chip, includes at least two touch sub-regions; within the same touch sub-region, the touch electrodes of the touch unit The capacitance values are the same; in different touch sub-regions, the capacitance values of the touch electrodes of the touch units are different.
  • An embodiment of the present application provides a display device including a touch chip and a touch array substrate.
  • the touch array substrate includes a base substrate, a thin film transistor structure layer provided on the base substrate, and a A flat layer on the thin film transistor TFT structure layer, a touch electrode layer provided on the flat layer, an insulation layer provided on the touch electrode layer, and a touch wire provided on a part of the insulation layer Layer, a passivation layer provided on the touch wiring layer and the insulation layer, and a pixel electrode layer provided on the passivation layer;
  • the thin film transistor structure layer forms a gate line and a source arranged in a stack.
  • An electrode line, the touch electrode layer forms a touch electrode
  • the touch wire layer forms a touch wire, and is electrically connected to a corresponding touch electrode through the insulation layer
  • the pixel electrode layer forms a pixel electrode;
  • the touch array substrate includes a touch function area and a touch chip disposed outside the touch function area, and the touch function area is provided with a plurality of touch units; the touch unit includes touch Electrodes, touch wires corresponding to the touch electrodes, gate lines, source lines, and pixel electrodes in corresponding areas of the touch electrodes; the touch unit is electrically connected to the touch wires through the touch wires Touch chip
  • the product of the touch lead resistance value and the touch electrode capacitance value of the multiple touch units is a fixed value.
  • the touch electrode capacitance value includes the capacitance value between the touch electrode and the pixel electrode, the touch electrode and the grid.
  • a total area of a pixel electrode in the touch unit gradually decreases.
  • the area of each pixel electrode in the touch unit gradually decreases in a direction away from the touch chip.
  • the grayscale brightness of the touch unit gradually increases in a direction away from the touch chip.
  • a total area of source lines in the touch unit gradually decreases.
  • the line width of the source lines in the touch unit gradually decreases in a direction away from the touch chip.
  • the touch functional area in a direction away from the touch chip, includes at least two touch sub-regions; within the same touch sub-region, the touch electrodes of the touch unit The capacitance values are the same; in different touch sub-regions, the capacitance values of the touch electrodes of the touch units are different.
  • the present application provides a new touch array substrate and a display device.
  • the touch functional area of the touch array substrate is provided with a plurality of touch units.
  • the touch unit includes a touch electrode, a touch wire corresponding to the touch electrode, and a touch screen.
  • the gate line, source line, and pixel electrode in the corresponding area of the control electrode; the touch unit is electrically connected to the touch chip through the touch wire; the resistance of the touch wire resistance of the multiple touch units and the capacitance of the touch electrode are
  • the product is a fixed value; in this way, the RC loading of the touch electrode on the far IC side is basically the same as the RC loading of the touch electrode on the near IC side, and the distance is consistent.
  • the touch chip drives the touch electrode on the far IC side and the touch electrode on the near IC side.
  • the degree of difficulty is the same, and the phenomenon that the touch electrodes on the remote IC end are difficult to drive or cannot be driven is solved, and the technical problem that the touch array electrodes on the existing touch array substrate are difficult or impossible to drive is solved.
  • FIG. 1 is a schematic diagram of a conventional touch array substrate
  • FIG. 2 is a schematic diagram of a touch panel according to an embodiment of the present application.
  • FIG. 3 is a schematic diagram of area division of a touch array substrate according to an embodiment of the present application.
  • FIG. 4 is a schematic diagram of a first arrangement of a touch array substrate according to an embodiment of the present application.
  • FIG. 5 is a schematic diagram of a second arrangement of a touch array substrate provided by an embodiment of the present application.
  • the present application reduces the area of the pixel electrode on the far IC end or The line width of the source line is to reduce the capacitance of the touch electrode at the far IC end, and the defect can be solved.
  • a touch panel such as a liquid crystal panel provided in this application includes an array substrate and a color filter substrate.
  • the array substrate and the color filter substrate are relatively bonded together, and then liquid crystal is added between the array substrate and the color filter substrate to obtain a liquid crystal panel.
  • the parallel plate capacitor formed by the pixel electrode on the array substrate and the common electrode on the color filter substrate is a liquid crystal capacitor, and the parallel plate capacitor formed by the pixel electrode on the array substrate and the common electrode on the array substrate is stored. capacitance.
  • the touch array substrate includes a base substrate 201, a thin film transistor structure layer 202 provided on the base substrate, a flat layer 203 provided on the thin film transistor TFT structure layer, and The touch electrode layer 204 on the flat layer, the insulation layer 205 provided on the touch electrode layer 204, the touch wire layer 206 provided on a part of the insulation layer 205, and the touch wire layer 206, a passivation layer 207 on the insulating layer 205, and a pixel electrode layer 208 provided on the passivation layer 207;
  • the thin film transistor structure layer 202 includes a first insulation layer 2021, a second insulation layer 2022, a gate line layer 2023 (ie, a first metal layer), a third insulation layer 2024, and a source line layer 2025 (ie, the first Two metal layers), the gate line layer 2023 is patterned to form the gate line 3, the source line layer 2025 is patterned to form the source line 4, and the gate line 3 and the source line 4 are stacked;
  • the touch electrode layer 204 is patterned to form a touch electrode 5
  • the touch wire layer 206 is patterned to form a touch wire 6, and is electrically connected to a corresponding one through the insulating layer 205 through a via 7 A touch electrode 5
  • the pixel electrode layer 208 is patterned to form a pixel electrode 8;
  • the color filter substrate includes a base substrate 209 and a light-shielding layer 210 provided on the base substrate 209.
  • the light-shielding layer 210 is patterned to form a black matrix 9.
  • the touch array substrate includes a touch function area TP and a touch chip IC disposed outside the touch function area, and the touch function area is provided with a plurality of touch units W .
  • the touch unit W includes a touch electrode 5, a touch wire 6 corresponding to the touch electrode 5, a gate line 3, a source line 4, and a pixel electrode 8 in a region corresponding to the touch electrode 5.
  • the touch unit W is electrically connected to the touch chip IC through the touch lead 6; wherein a product RC of a touch lead resistance value R and a touch electrode capacitance value C of a plurality of touch units is fixed.
  • the capacitance C of the touch electrode includes a capacitance value C1 between the touch electrode and the pixel electrode, a capacitance value C2 between the touch electrode and the gate line, and a capacitance value between the touch electrode and the source line. C3, and the self-capacitance value of the touch electrode.
  • the RC loading of the touch electrode on the far IC side is basically the same as the RC loading of the touch electrode on the near IC side.
  • the RC loading is consistent between the far and the near.
  • the touch chip drives the touch electrode on the far IC side and the touch on the near IC side.
  • the degree of difficulty of the electrodes is the same, and the phenomenon that the touch electrodes on the remote IC end are difficult or impossible to drive does not occur, and the technical problem that the touch array electrodes on the existing touch array substrate are difficult or impossible to drive is solved.
  • a total area of a pixel electrode in the touch unit gradually decreases, so that a direct area between the pixel electrode and the touch electrode decreases, corresponding to The capacitor C1 becomes smaller.
  • the pixel electrode 8 includes a plurality of sub-pixel electrodes, such as red, green and blue (RGB) three-color red sub-pixel electrodes 81, green sub-pixel electrodes 82, and blue sub-pixel electrodes 83.
  • the area of each sub-pixel electrode in the touch unit gradually decreases in a direction away from the touch chip; for example, away from the touch In the direction of the control chip, the red sub-pixel electrode 81, the green sub-pixel electrode 82, and the blue sub-pixel electrode 83 in the touch unit are all reduced in proportion.
  • the grayscale brightness of large pixel electrodes and middle pixel electrodes can be appropriately reduced under the same target brightness requirement by reducing the corresponding gate
  • the driving voltage is used to reduce the brightness, so that the final grayscale brightness of the large pixel electrode, the middle pixel electrode, and the small pixel electrode is consistent.
  • the grayscale brightness of the touch unit gradually increases in a direction away from the touch chip.
  • the total area of the source lines in the touch unit gradually decreases in a direction away from the touch chip.
  • the line width of the source lines in the touch unit is gradually reduced in a direction away from the touch chip.
  • the total area of the gate lines in the touch unit gradually decreases in a direction away from the touch chip.
  • the line width of the gate lines in the touch unit is gradually reduced in a direction away from the touch chip.
  • the touch function area includes at least two touch sub-regions in a direction away from the touch chip; within the same touch sub-region, the The touch electrode capacitance values are the same; the touch electrode capacitance values of the touch units are different in different touch sub-regions.
  • the touch function area in a direction away from the touch chip, includes a first touch sub-region Q1 (a third region near the IC end), a second The touch sub-region Q2 (the middle third region) and the third touch sub-region Q3 (the third region of the far IC end).
  • the total pixel electrode area S1 of the touch unit in the first touch sub-region the total pixel electrode area S2 of the touch unit in the second touch sub-region, and the touch unit in the third touch sub-region.
  • the gate driving voltage V1 of the pixel electrode in the first touch sub-region the gate driving voltage V2 of the pixel electrode in the second touch sub-region, and the gate of the pixel electrode in the third touch sub-region.
  • the display device provided in the embodiment of the present application includes a touch chip and a touch array substrate.
  • the touch array substrate includes a base substrate 201 and a base substrate 201 provided on the base substrate.
  • a touch wire layer 206 provided on a part of the insulating layer 205, a passivation layer 207 provided on the touch wire layer 206 and the insulating layer 205, and a passivation layer 207 provided on the passivation layer 207 Pixel electrode layer 208;
  • the thin film transistor structure layer 202 includes a first insulation layer 2021, a second insulation layer 2022, a gate line layer 2023 (ie, a first metal layer), a third insulation layer 2024, and a source line layer 2025 (ie, the first Two metal layers), the gate line layer 2023 is patterned to form the gate line 3, the source line layer 2025 is patterned to form the source line 4, and the gate line 3 and the source line 4 are stacked;
  • the touch electrode layer 204 is patterned to form a touch electrode 5
  • the touch wire layer 206 is patterned to form a touch wire 6, and is electrically connected to a corresponding one through the insulating layer 205 through a via 7 A touch electrode 5
  • the pixel electrode layer 208 is patterned to form a pixel electrode 8;
  • the color filter substrate includes a base substrate 209 and a light-shielding layer 210 provided on the base substrate 209.
  • the light-shielding layer 210 is patterned to form a black matrix 9.
  • the touch array substrate includes a touch function area TP and a touch chip IC disposed outside the touch function area, and the touch function area is provided with a plurality of touch units W .
  • the touch unit W includes a touch electrode 5, a touch wire 6 corresponding to the touch electrode 5, a gate line 3, a source line 4, and a pixel electrode 8 in a region corresponding to the touch electrode 5.
  • the touch unit W is electrically connected to the touch chip IC through the touch lead 6; wherein a product RC of a touch lead resistance value R and a touch electrode capacitance value C of a plurality of touch units is fixed.
  • the capacitance C of the touch electrode includes a capacitance value C1 between the touch electrode and the pixel electrode, a capacitance value C2 between the touch electrode and the gate line, and a capacitance value between the touch electrode and the source line. C3, and the self-capacitance value of the touch electrode.
  • the RC loading of the touch electrode on the far IC side is basically the same as the RC loading of the touch electrode on the near IC side.
  • the RC loading is consistent between the far and the near.
  • the touch chip drives the touch electrode on the far IC side and the touch on the near IC side.
  • the degree of difficulty of the electrodes is the same, and the phenomenon that the touch electrodes on the remote IC end are difficult or impossible to drive does not occur, and the technical problem that the touch array electrodes on the existing touch array substrate are difficult or impossible to drive is solved.
  • a total area of a pixel electrode in the touch unit gradually decreases, so that a direct area between the pixel electrode and the touch electrode decreases, corresponding to The capacitor C1 becomes smaller.
  • the pixel electrode 8 includes a plurality of sub-pixel electrodes, such as red, green and blue (RGB) three-color red sub-pixel electrodes 81, green sub-pixel electrodes 82, and blue sub-pixel electrodes 83.
  • the area of each sub-pixel electrode in the touch unit gradually decreases in a direction away from the touch chip; for example, away from the touch In the direction of the control chip, the red sub-pixel electrode 81, the green sub-pixel electrode 82, and the blue sub-pixel electrode 83 in the touch unit are all reduced in proportion.
  • the grayscale brightness of large pixel electrodes and middle pixel electrodes can be appropriately reduced under the same target brightness requirement by reducing the corresponding gate
  • the driving voltage is used to reduce the brightness, so that the final grayscale brightness of the large pixel electrode, the middle pixel electrode, and the small pixel electrode is consistent.
  • the grayscale brightness of the touch unit gradually increases in a direction away from the touch chip.
  • the total area of the source lines in the touch unit gradually decreases in a direction away from the touch chip.
  • the line width of the source lines in the touch unit is gradually reduced in a direction away from the touch chip.
  • the total area of the gate lines in the touch unit gradually decreases in a direction away from the touch chip.
  • the line width of the gate lines in the touch unit is gradually reduced in a direction away from the touch chip.
  • the touch function area includes at least two touch sub-regions in a direction away from the touch chip; within the same touch sub-region, the The touch electrode capacitance values are the same; the touch electrode capacitance values of the touch units are different in different touch sub-regions.
  • the touch function area in a direction away from the touch chip, includes a first touch sub-region Q1 (a third region near the IC end), a second The touch sub-region Q2 (the middle third region) and the third touch sub-region Q3 (the third region of the far IC end).
  • the total pixel electrode area S1 of the touch unit in the first touch sub-region the total pixel electrode area S2 of the touch unit in the second touch sub-region, and the touch unit in the third touch sub-region.
  • the gate driving voltage V1 of the pixel electrode in the first touch sub-region the gate driving voltage V2 of the pixel electrode in the second touch sub-region, and the gate of the pixel electrode in the third touch sub-region.
  • the present application provides a new touch array substrate and a display device.
  • the touch functional area of the touch array substrate is provided with a plurality of touch units.
  • the touch unit includes a touch electrode, a touch wire corresponding to the touch electrode, and a touch screen.
  • the gate line, source line, and pixel electrode in the corresponding area of the control electrode; the touch unit is electrically connected to the touch chip through the touch wire; the resistance of the touch wire resistance of the multiple touch units and the capacitance of the touch electrode are
  • the product is a fixed value; in this way, the RC loading of the touch electrode on the far IC side is basically the same as the RC loading of the touch electrode on the near IC side, and the distance is consistent.
  • the touch chip drives the touch electrode on the far IC side and the touch electrode on the near IC side.
  • the degree of difficulty is the same, and the phenomenon that the touch electrodes on the remote IC end are difficult to drive or cannot be driven is solved, and the technical problem that the touch array electrodes on the existing touch array substrate are difficult or impossible to drive is solved.

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  • Human Computer Interaction (AREA)
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Abstract

本申请提供一种触控阵列基板以及显示装置，该触控阵列基板设置有多个触控单元；多个触控单元的触控导线电阻值与触控电极电容值的乘积为定值；这样触控芯片驱动远端触控电极和驱动近端触控电极的难易程度相同，不会出现远端触控电极驱动困难或者无法驱动的现象。

Description

触控阵列基板以及显示装置 技术领域
本申请涉及触控显示领域，尤其涉及一种触控阵列基板以及显示装置。
 背景技术
为了提高用户体验，显示装置已经广泛集成触摸屏（In-cell面板，触控阵列基板）。触摸屏用以感测触碰位置的触控电极均集成在显示装置内，以使显示触控面板整体更加轻薄。
如图1所示，In-cell面板的触控层是共用显示的Vcom层，把原本一整面的Vcom层分割成形状大小相近的若干触控电极（一般为矩形），触控电极通过触控导线连接到TDDI 芯片（即触控芯片，IC），距离TDDI芯片近的触控电极需要的触控导线短，触控导线的电阻R就小，距离TDDI芯片远的触控电极需要的触控导线长，触控导线的电阻R就大。而每一个触控电极的大小形状都相近，因此触控电极的电容值C相近。
即，近TDDI芯片的触控导线R值小，远TDDI芯片的触控导线路R值大，而触控电极的C值一样大，则触控电极的RC loading表现出远近不一致（R*C越大，RC loading越大）。
RC loading越大，IC驱动起来越难，在小尺寸In-cell面板中，由于尺寸很小，远IC端RC loading虽然有变大，IC还勉强可以驱动。在大尺寸In-cell面板中，远IC端的触控电极需要的触控导线路更长，R值更大，且大尺寸面板的触控电极面积更大，C值也更大，这会导致RC loading超过IC驱动范围，进而导致远IC端的触控电极驱动困难或者甚至无法驱动。
即，现有触控阵列基板存在远IC端的触控电极驱动困难或者无法驱动的技术问题。
 技术问题
本申请提供一种触控阵列基板以及显示装置，以解决现有触控阵列基板存在远IC端的触控电极驱动困难或者无法驱动的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请实施例提供了一种触控阵列基板，所述触控阵列基板包括：衬底基板、设于所述衬底基板上的薄膜晶体管结构层、设于所述薄膜晶体管TFT结构层上的平坦层、设于所述平坦层上的触控电极层、设于所述触控电极层上的绝缘层、设于一部分所述绝缘层上的触控导线层、设于所述触控导线层与所述绝缘层上的钝化层、以及设于所述钝化层上的像素电极层；所述薄膜晶体管结构层形成层叠设置的栅极线和源极线，所述触控电极层形成触控电极，所述触控导线层形成触控导线、并穿过所述绝缘层电连接至对应的触控电极，所述像素电极层形成像素电极；
所述触控阵列基板包括触控功能区、以及设置在所述触控功能区之外的触控芯片，所述触控功能区设置有多个触控单元；所述触控单元包括触控电极、所述触控电极对应的触控导线、所述触控电极对应区域内的栅极线、源极线以及像素电极；所述触控单元通过与所述触控导线电连接至所述触控芯片；
其中，多个触控单元的触控导线电阻值与触控电极电容值的乘积为定值，所述触控电极电容值包括触控电极与像素电极之间的电容值、触控电极与栅极线之间的电容值、触控电极与源极线之间的电容值、以及触控电极的自电容值。
在本申请的触控阵列基板中，在远离所述触控芯片的方向上，所述触控单元内像素电极的总面积逐渐减小。
在本申请的触控阵列基板中，在远离所述触控芯片的方向上，所述触控单元内各像素电极的面积逐渐减小。
在本申请的触控阵列基板中，在远离所述触控芯片的方向上，所述触控单元的灰阶亮度逐渐增大。
在本申请的触控阵列基板中，在远离所述触控芯片的方向上，所述触控单元内源极线的总面积逐渐减小。
在本申请的触控阵列基板中，在远离所述触控芯片的方向上，所述触控单元内源极线的线宽逐渐减小。
在本申请的触控阵列基板中，沿远离所述触控芯片的方向，所述触控功能区包括至少两个触控子区域；在同一触控子区域内，触控单元的触控电极电容值相同；在不同触控子区域内，触控单元的触控电极电容值不相同。
在本申请的触控阵列基板中，沿远离所述触控芯片的方向，所述触控功能区包括第一触控子区域、第二触控子区域以及第三触控子区域；第一触控子区域内触控单元的像素电极总面积S1、第二触控子区域内触控单元的像素电极总面积S2、第三触控子区域内触控单元的像素电极总面积S3满足关系：S1：S2：S3=1:0.8:0.6。
在本申请的触控阵列基板中，第一触控子区域内像素电极的栅极驱动电压V1、第二触控子区域内像素电极的栅极驱动电压V2、第三触控子区域内像素电极的栅极驱动电压V3满足关系：V1：V2：V3=9:10:11。
在本申请的触控阵列基板中，第一触控子区域内触控单元源极线的线宽W1、第二触控子区域内触控单元源极线的线宽W2、第三触控子区域内触控单元源极线的线宽W3满足关系：W1：W2：W3=1:0.8:0.6。
本申请实施例提供了一种显示装置，其包括触控芯片以及触控阵列基板，所述触控阵列基板包括：衬底基板、设于所述衬底基板上的薄膜晶体管结构层、设于所述薄膜晶体管TFT结构层上的平坦层、设于所述平坦层上的触控电极层、设于所述触控电极层上的绝缘层、设于一部分所述绝缘层上的触控导线层、设于所述触控导线层与所述绝缘层上的钝化层、以及设于所述钝化层上的像素电极层；所述薄膜晶体管结构层形成层叠设置的栅极线和源极线，所述触控电极层形成触控电极，所述触控导线层形成触控导线、并穿过所述绝缘层电连接至对应的触控电极，所述像素电极层形成像素电极；
所述触控阵列基板包括触控功能区、以及设置在所述触控功能区之外的触控芯片，所述触控功能区设置有多个触控单元；所述触控单元包括触控电极、所述触控电极对应的触控导线、所述触控电极对应区域内的栅极线、源极线以及像素电极；所述触控单元通过与所述触控导线电连接至所述触控芯片；
其中，多个触控单元的触控导线电阻值与触控电极电容值的乘积为定值，所述触控电极电容值包括触控电极与像素电极之间的电容值、触控电极与栅极线之间的电容值、触控电极与源极线之间的电容值、以及触控电极的自电容值。
在本申请的触控阵列基板中，在远离所述触控芯片的方向上，所述触控单元内像素电极的总面积逐渐减小。
在本申请的触控阵列基板中，在远离所述触控芯片的方向上，所述触控单元内各像素电极的面积逐渐减小。
在本申请的触控阵列基板中，在远离所述触控芯片的方向上，所述触控单元的灰阶亮度逐渐增大。
在本申请的触控阵列基板中，在远离所述触控芯片的方向上，所述触控单元内源极线的总面积逐渐减小。
在本申请的触控阵列基板中，在远离所述触控芯片的方向上，所述触控单元内源极线的线宽逐渐减小。
在本申请的触控阵列基板中，沿远离所述触控芯片的方向，所述触控功能区包括至少两个触控子区域；在同一触控子区域内，触控单元的触控电极电容值相同；在不同触控子区域内，触控单元的触控电极电容值不相同。
在本申请的触控阵列基板中，沿远离所述触控芯片的方向，所述触控功能区包括第一触控子区域、第二触控子区域以及第三触控子区域；第一触控子区域内触控单元的像素电极总面积S1、第二触控子区域内触控单元的像素电极总面积S2、第三触控子区域内触控单元的像素电极总面积S3满足关系：S1：S2：S3=1:0.8:0.6。
在本申请的触控阵列基板中，第一触控子区域内像素电极的栅极驱动电压V1、第二触控子区域内像素电极的栅极驱动电压V2、第三触控子区域内像素电极的栅极驱动电压V3满足关系：V1：V2：V3=9:10:11。
在本申请的触控阵列基板中，第一触控子区域内触控单元源极线的线宽W1、第二触控子区域内触控单元源极线的线宽W2、第三触控子区域内触控单元源极线的线宽W3满足关系：W1：W2：W3=1:0.8:0.6。
 有益效果
本申请提供一种新的触控阵列基板以及显示装置，触控阵列基板的触控功能区设置有多个触控单元；触控单元包括触控电极、触控电极对应的触控导线、触控电极对应区域内的栅极线、源极线以及像素电极；触控单元通过与触控导线电连接至触控芯片；多个触控单元的触控导线电阻值与触控电极电容值的乘积为定值；这样远IC端的触控电极的RC loading与近IC端的触控电极的RC loading基本相同，远近一致，触控芯片驱动远IC端触控电极和驱动近IC端触控电极的难易程度相同，不会出现远IC端触控电极驱动困难或者无法驱动的现象，解决了现有触控阵列基板存在远IC端的触控电极驱动困难或者无法驱动的技术问题。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为现有触控阵列基板的示意图；
图2为本申请实施例提供的触控面板的示意图；
图3为本申请实施例提供的触控阵列基板的区域划分示意图；
图4为本申请实施例提供的触控阵列基板的第一种设置示意图；
图5为本申请实施例提供的触控阵列基板的第二种设置示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
针对如图1所示的现有触控阵列基板存在远IC端的触控电极驱动困难或者无法驱动的技术问题，如图4或5所示，本申请通过减小远IC端的像素电极的面积或者源极线的线宽，以减小远IC端的触控电极的电容，进而能够解决该缺陷。
本申请提供的液晶面板等触控面板包括阵列基板以及彩色滤光基板，阵列基板和彩色滤光基板相对贴合，然后在阵列基板和彩色滤光基板之间加入液晶从而得到液晶面板。其中，由阵列基板上的像素电极和彩色滤光基板上的公共电极所形成的平行板电容为液晶电容，由阵列基板上的像素电极和阵列基板上的公共电极所形成的平行板电容为存储电容。
如图2所示，触控阵列基板包括：衬底基板201、设于所述衬底基板上的薄膜晶体管结构层202、设于所述薄膜晶体管TFT结构层上的平坦层203、设于所述平坦层上的触控电极层204、设于所述触控电极层204上的绝缘层205、设于一部分所述绝缘层205上的触控导线层206、设于所述触控导线层206与所述绝缘层205上的钝化层207、以及设于所述钝化层207上的像素电极层208；
所述薄膜晶体管结构层202包括层叠设置的第一绝缘层2021、第二绝缘层2022、栅极线层2023（即第一金属层）、第三绝缘层2024以及源极线层2025（即第二金属层），栅极线层2023经过图案化处理形成栅极线3，源极线层2025经过图案化处理形成源极线4，栅极线3和源极线4层叠设置；
所述触控电极层204经过图案化处理形成触控电极5，所述触控导线层206经过图案化处理形成触控导线6、并通过过孔7穿过所述绝缘层205电连接至对应的触控电极5；所述像素电极层208经过图案化处理形成像素电极8；
彩色滤光基板包括衬底基板209、设于所述衬底基板209上的遮光层210，遮光层210经过图案化处理形成黑色矩阵9。
如图3所示，所述触控阵列基板包括触控功能区TP、以及设置在所述触控功能区之外的触控芯片IC，所述触控功能区设置有多个触控单元W。
所述触控单元W包括触控电极5、所述触控电极5对应的触控导线6、所述触控电极5对应区域内的栅极线3、源极线4以及像素电极8；所述触控单元W通过与所述触控导线6电连接至所述触控芯片IC；其中，多个触控单元的触控导线电阻值R与触控电极电容值C的乘积RC loading为定值，所述触控电极电容值C包括触控电极与像素电极之间的电容值C1、触控电极与栅极线之间的电容值C2、触控电极与源极线之间的电容值C3、以及触控电极的自电容值。
本申请实施例通过配置远IC端的触控电极的RC loading与近IC端的触控电极的RC loading基本相同，RC loading远近一致，触控芯片驱动远IC端触控电极和驱动近IC端触控电极的难易程度相同，不会出现远IC端触控电极驱动困难或者无法驱动的现象，解决了现有触控阵列基板存在远IC端的触控电极驱动困难或者无法驱动的技术问题。
在一种实施例中，在远离所述触控芯片的方向上，所述触控单元内像素电极的总面积逐渐减小，这样像素电极与触控电极之间的正对面积减小，对应的电容C1就变小。
如图2所示，像素电极8包括多个子像素电极，例如红绿蓝（RGB）三色的红色子像素电极81、绿色子像素电极82、蓝色子像素电极83。此时，在一种实施例中，为了保证光谱的均匀性，在远离所述触控芯片的方向上，所述触控单元内各子像素电极的面积逐渐减小；例如在远离所述触控芯片的方向上，触控单元中红色子像素电极81、绿色子像素电极82、蓝色子像素电极83都等比例减小。
为了避免不同像素单元由于像素电极大小不一样导致在同一驱动电压时的发光亮度不一样，可适当降低在同一个目标亮度要求下，大像素电极和中像素电极的灰阶亮度，通过降低对应栅极驱动电压的方式来降低亮度，以使大像素电极和中像素电极和小像素电极的最终灰阶亮度一致。此时，在一种实施例中，在远离所述触控芯片的方向上，所述触控单元的灰阶亮度逐渐增大。
在一种实施例中，在远离所述触控芯片的方向上，所述触控单元内源极线的总面积逐渐减小。
在一种实施例中，为了降低图案化所使用的模板图案复杂度，在远离所述触控芯片的方向上，所述触控单元内源极线的线宽逐渐减小。
在一种实施例中，在远离所述触控芯片的方向上，所述触控单元内栅极线的总面积逐渐减小。
在一种实施例中，为了降低图案化所使用的模板图案复杂度，在远离所述触控芯片的方向上，所述触控单元内栅极线的线宽逐渐减小。
在一种实施例中，如图3所示，沿远离所述触控芯片的方向，所述触控功能区包括至少两个触控子区域；在同一触控子区域内，触控单元的触控电极电容值相同；在不同触控子区域内，触控单元的触控电极电容值不相同。
在一种实施例中，如图3所示，沿远离所述触控芯片的方向，所述触控功能区包括第一触控子区域Q1（近IC端的三分之一区域）、第二触控子区域Q2（中间的三分之一区域）以及第三触控子区域Q3（远IC端的三分之一区域）。
如图4所示，第一触控子区域内触控单元的像素电极总面积S1、第二触控子区域内触控单元的像素电极总面积S2、第三触控子区域内触控单元的像素电极总面积S3满足关系：S1：S2：S3=1:0.8:0.6，同时黑色矩阵BM9的遮光区域随着加宽，以避免显示漏光。
在一种实施例中，第一触控子区域内像素电极的栅极驱动电压V1、第二触控子区域内像素电极的栅极驱动电压V2、第三触控子区域内像素电极的栅极驱动电压V3满足关系：V1：V2：V3=9:10:11。如以255灰阶为例，V1为4.5V，V2为5V，V3为5.5V。
如图5所示，改变C1的同时，改变触控电极和源极线的电容值C3，进一步降低远端触控电极的RC loading，源极线线粗则和触控电极交叠面积大，电容值就大。因此减小源极线的线宽能降低触控电极和源极线的电容值。此时，第一触控子区域内触控单元源极线的线宽W1、第二触控子区域内触控单元源极线的线宽W2、第三触控子区域内触控单元源极线的线宽W3满足关系：W1：W2：W3=1:0.8:0.6。
在一种实施例中，如图3所示，本申请实施例提供的显示装置包括触控芯片以及触控阵列基板，触控阵列基板包括：衬底基板201、设于所述衬底基板上的薄膜晶体管结构层202、设于所述薄膜晶体管TFT结构层上的平坦层203、设于所述平坦层上的触控电极层204、设于所述触控电极层204上的绝缘层205、设于一部分所述绝缘层205上的触控导线层206、设于所述触控导线层206与所述绝缘层205上的钝化层207、以及设于所述钝化层207上的像素电极层208；
所述薄膜晶体管结构层202包括层叠设置的第一绝缘层2021、第二绝缘层2022、栅极线层2023（即第一金属层）、第三绝缘层2024以及源极线层2025（即第二金属层），栅极线层2023经过图案化处理形成栅极线3，源极线层2025经过图案化处理形成源极线4，栅极线3和源极线4层叠设置；
所述触控电极层204经过图案化处理形成触控电极5，所述触控导线层206经过图案化处理形成触控导线6、并通过过孔7穿过所述绝缘层205电连接至对应的触控电极5；所述像素电极层208经过图案化处理形成像素电极8；
彩色滤光基板包括衬底基板209、设于所述衬底基板209上的遮光层210，遮光层210经过图案化处理形成黑色矩阵9。
如图3所示，所述触控阵列基板包括触控功能区TP、以及设置在所述触控功能区之外的触控芯片IC，所述触控功能区设置有多个触控单元W。
所述触控单元W包括触控电极5、所述触控电极5对应的触控导线6、所述触控电极5对应区域内的栅极线3、源极线4以及像素电极8；所述触控单元W通过与所述触控导线6电连接至所述触控芯片IC；其中，多个触控单元的触控导线电阻值R与触控电极电容值C的乘积RC loading为定值，所述触控电极电容值C包括触控电极与像素电极之间的电容值C1、触控电极与栅极线之间的电容值C2、触控电极与源极线之间的电容值C3、以及触控电极的自电容值。
本申请实施例通过配置远IC端的触控电极的RC loading与近IC端的触控电极的RC loading基本相同，RC loading远近一致，触控芯片驱动远IC端触控电极和驱动近IC端触控电极的难易程度相同，不会出现远IC端触控电极驱动困难或者无法驱动的现象，解决了现有触控阵列基板存在远IC端的触控电极驱动困难或者无法驱动的技术问题。
在一种实施例中，在远离所述触控芯片的方向上，所述触控单元内像素电极的总面积逐渐减小，这样像素电极与触控电极之间的正对面积减小，对应的电容C1就变小。
如图2所示，像素电极8包括多个子像素电极，例如红绿蓝（RGB）三色的红色子像素电极81、绿色子像素电极82、蓝色子像素电极83。此时，在一种实施例中，为了保证光谱的均匀性，在远离所述触控芯片的方向上，所述触控单元内各子像素电极的面积逐渐减小；例如在远离所述触控芯片的方向上，触控单元中红色子像素电极81、绿色子像素电极82、蓝色子像素电极83都等比例减小。
为了避免不同像素单元由于像素电极大小不一样导致在同一驱动电压时的发光亮度不一样，可适当降低在同一个目标亮度要求下，大像素电极和中像素电极的灰阶亮度，通过降低对应栅极驱动电压的方式来降低亮度，以使大像素电极和中像素电极和小像素电极的最终灰阶亮度一致。此时，在一种实施例中，在远离所述触控芯片的方向上，所述触控单元的灰阶亮度逐渐增大。
在一种实施例中，在远离所述触控芯片的方向上，所述触控单元内源极线的总面积逐渐减小。
在一种实施例中，为了降低图案化所使用的模板图案复杂度，在远离所述触控芯片的方向上，所述触控单元内源极线的线宽逐渐减小。
在一种实施例中，在远离所述触控芯片的方向上，所述触控单元内栅极线的总面积逐渐减小。
在一种实施例中，为了降低图案化所使用的模板图案复杂度，在远离所述触控芯片的方向上，所述触控单元内栅极线的线宽逐渐减小。
在一种实施例中，如图3所示，沿远离所述触控芯片的方向，所述触控功能区包括至少两个触控子区域；在同一触控子区域内，触控单元的触控电极电容值相同；在不同触控子区域内，触控单元的触控电极电容值不相同。
在一种实施例中，如图3所示，沿远离所述触控芯片的方向，所述触控功能区包括第一触控子区域Q1（近IC端的三分之一区域）、第二触控子区域Q2（中间的三分之一区域）以及第三触控子区域Q3（远IC端的三分之一区域）。
如图4所示，第一触控子区域内触控单元的像素电极总面积S1、第二触控子区域内触控单元的像素电极总面积S2、第三触控子区域内触控单元的像素电极总面积S3满足关系：S1：S2：S3=1:0.8:0.6，同时黑色矩阵BM9的遮光区域随着加宽，以避免显示漏光。
在一种实施例中，第一触控子区域内像素电极的栅极驱动电压V1、第二触控子区域内像素电极的栅极驱动电压V2、第三触控子区域内像素电极的栅极驱动电压V3满足关系：V1：V2：V3=9:10:11。如以255灰阶为例，V1为4.5V，V2为5V，V3为5.5V。
如图5所示，改变C1的同时，改变触控电极和源极线的电容值C3，进一步降低远端触控电极的RC loading，源极线线粗则和触控电极交叠面积大，电容值就大。因此减小源极线的线宽能降低触控电极和源极线的电容值。此时，第一触控子区域内触控单元源极线的线宽W1、第二触控子区域内触控单元源极线的线宽W2、第三触控子区域内触控单元源极线的线宽W3满足关系：W1：W2：W3=1:0.8:0.6。
根据上述实施例可知：
本申请提供一种新的触控阵列基板以及显示装置，触控阵列基板的触控功能区设置有多个触控单元；触控单元包括触控电极、触控电极对应的触控导线、触控电极对应区域内的栅极线、源极线以及像素电极；触控单元通过与触控导线电连接至触控芯片；多个触控单元的触控导线电阻值与触控电极电容值的乘积为定值；这样远IC端的触控电极的RC loading与近IC端的触控电极的RC loading基本相同，远近一致，触控芯片驱动远IC端触控电极和驱动近IC端触控电极的难易程度相同，不会出现远IC端触控电极驱动困难或者无法驱动的现象，解决了现有触控阵列基板存在远IC端的触控电极驱动困难或者无法驱动的技术问题。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种触控阵列基板，其包括：衬底基板、设于所述衬底基板上的薄膜晶体管结构层、设于所述薄膜晶体管TFT结构层上的平坦层、设于所述平坦层上的触控电极层、设于所述触控电极层上的绝缘层、设于一部分所述绝缘层上的触控导线层、设于所述触控导线层与所述绝缘层上的钝化层、以及设于所述钝化层上的像素电极层；所述薄膜晶体管结构层形成层叠设置的栅极线和源极线，所述触控电极层形成触控电极，所述触控导线层形成触控导线、并穿过所述绝缘层电连接至对应的触控电极，所述像素电极层形成像素电极；
    所述触控阵列基板包括触控功能区、以及设置在所述触控功能区之外的触控芯片，所述触控功能区设置有多个触控单元；所述触控单元包括触控电极、所述触控电极对应的触控导线、所述触控电极对应区域内的栅极线、源极线以及像素电极；所述触控单元通过与所述触控导线电连接至所述触控芯片；
    其中，多个触控单元的触控导线电阻值与触控电极电容值的乘积为定值，所述触控电极电容值包括触控电极与像素电极之间的电容值、触控电极与栅极线之间的电容值、触控电极与源极线之间的电容值、以及触控电极的自电容值。
  2. 根据权利要求1所述的触控阵列基板，其中，在远离所述触控芯片的方向上，所述触控单元内像素电极的总面积逐渐减小。
  3. 根据权利要求2所述的触控阵列基板，其中，在远离所述触控芯片的方向上，所述触控单元内各像素电极的面积逐渐减小。
  4. 根据权利要求2所述的触控阵列基板，其中，在远离所述触控芯片的方向上，所述触控单元的灰阶亮度逐渐增大。
  5. 根据权利要求1所述的触控阵列基板，其中，在远离所述触控芯片的方向上，所述触控单元内源极线的总面积逐渐减小。
  6. 根据权利要求5所述的触控阵列基板，其中，在远离所述触控芯片的方向上，所述触控单元内源极线的线宽逐渐减小。
  7. 根据权利要求1所述的触控阵列基板，其中，沿远离所述触控芯片的方向，所述触控功能区包括至少两个触控子区域；在同一触控子区域内，触控单元的触控电极电容值相同；在不同触控子区域内，触控单元的触控电极电容值不相同。
  8. 根据权利要求7所述的触控阵列基板，其中，沿远离所述触控芯片的方向，所述触控功能区包括第一触控子区域、第二触控子区域以及第三触控子区域；第一触控子区域内触控单元的像素电极总面积S1、第二触控子区域内触控单元的像素电极总面积S2、第三触控子区域内触控单元的像素电极总面积S3满足关系：S1：S2：S3=1:0.8:0.6。
  9. 根据权利要求8所述的触控阵列基板，其中，第一触控子区域内像素电极的栅极驱动电压V1、第二触控子区域内像素电极的栅极驱动电压V2、第三触控子区域内像素电极的栅极驱动电压V3满足关系：V1：V2：V3=9:10:11。
  10. 根据权利要求8所述的触控阵列基板，其中，第一触控子区域内触控单元源极线的线宽W1、第二触控子区域内触控单元源极线的线宽W2、第三触控子区域内触控单元源极线的线宽W3满足关系：W1：W2：W3=1:0.8:0.6。
  11. 一种显示装置，其包括触控芯片以及触控阵列基板，所述触控阵列基板包括：衬底基板、设于所述衬底基板上的薄膜晶体管结构层、设于所述薄膜晶体管TFT结构层上的平坦层、设于所述平坦层上的触控电极层、设于所述触控电极层上的绝缘层、设于一部分所述绝缘层上的触控导线层、设于所述触控导线层与所述绝缘层上的钝化层、以及设于所述钝化层上的像素电极层；所述薄膜晶体管结构层形成层叠设置的栅极线和源极线，所述触控电极层形成触控电极，所述触控导线层形成触控导线、并穿过所述绝缘层电连接至对应的触控电极，所述像素电极层形成像素电极；
    所述触控阵列基板包括触控功能区、以及设置在所述触控功能区之外的触控芯片，所述触控功能区设置有多个触控单元；所述触控单元包括触控电极、所述触控电极对应的触控导线、所述触控电极对应区域内的栅极线、源极线以及像素电极；所述触控单元通过与所述触控导线电连接至所述触控芯片；
    其中，多个触控单元的触控导线电阻值与触控电极电容值的乘积为定值，所述触控电极电容值包括触控电极与像素电极之间的电容值、触控电极与栅极线之间的电容值、触控电极与源极线之间的电容值、以及触控电极的自电容值。
  12. 根据权利要求11所述的显示装置，其中，在远离所述触控芯片的方向上，所述触控单元内像素电极的总面积逐渐减小。
  13. 根据权利要求12所述的显示装置，其中，在远离所述触控芯片的方向上，所述触控单元内各像素电极的面积逐渐减小。
  14. 根据权利要求12所述的显示装置，其中，在远离所述触控芯片的方向上，所述触控单元的灰阶亮度逐渐增大。
  15. 根据权利要求11所述的显示装置，其中，在远离所述触控芯片的方向上，所述触控单元内源极线的总面积逐渐减小。
  16. 根据权利要求15所述的显示装置，其中，在远离所述触控芯片的方向上，所述触控单元内源极线的线宽逐渐减小。
  17. 根据权利要求11所述的显示装置，其中，沿远离所述触控芯片的方向，所述触控功能区包括至少两个触控子区域；在同一触控子区域内，触控单元的触控电极电容值相同；在不同触控子区域内，触控单元的触控电极电容值不相同。
  18. 根据权利要求17所述的显示装置，其中，沿远离所述触控芯片的方向，所述触控功能区包括第一触控子区域、第二触控子区域以及第三触控子区域；第一触控子区域内触控单元的像素电极总面积S1、第二触控子区域内触控单元的像素电极总面积S2、第三触控子区域内触控单元的像素电极总面积S3满足关系：S1：S2：S3=1:0.8:0.6。
  19. 根据权利要求18所述的显示装置，其中，第一触控子区域内像素电极的栅极驱动电压V1、第二触控子区域内像素电极的栅极驱动电压V2、第三触控子区域内像素电极的栅极驱动电压V3满足关系：V1：V2：V3=9:10:11。
  20. 根据权利要求18所述的显示装置，其中，第一触控子区域内触控单元源极线的线宽W1、第二触控子区域内触控单元源极线的线宽W2、第三触控子区域内触控单元源极线的线宽W3满足关系：W1：W2：W3=1:0.8:0.6。
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