WO2020019766A1 - 柔性显示装置及其制备方法 - Google Patents

柔性显示装置及其制备方法 Download PDF

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Publication number
WO2020019766A1
WO2020019766A1 PCT/CN2019/082620 CN2019082620W WO2020019766A1 WO 2020019766 A1 WO2020019766 A1 WO 2020019766A1 CN 2019082620 W CN2019082620 W CN 2019082620W WO 2020019766 A1 WO2020019766 A1 WO 2020019766A1
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Prior art keywords
layer
light emitting
flexible
tft array
organic light
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PCT/CN2019/082620
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English (en)
French (fr)
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谢华飞
陈书志
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深圳市华星光电半导体显示技术有限公司
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Publication of WO2020019766A1 publication Critical patent/WO2020019766A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements

Definitions

  • the present invention relates to the field of flexible display technology, and in particular, to a flexible display device and a manufacturing method thereof.
  • Flexible display is the next generation of electronic display technology after cathode ray tube display (CRTode Ray Tube, CRT) and flat panel display (FPD), it is another revolution in the history of display technology.
  • Flexible displays have the advantages of thin appearance, light weight, stable system, flexible and easy to carry. They can be integrated into textiles, durable and wear-resistant, and can be freely designed. Therefore, they have attracted wide attention in the display field.
  • the existing flexible display is prone to peeling or offsetting the backlight and the flexible panel when it is bent or folded, thereby causing abnormalities such as display light leakage and color shift. Therefore, it is very important to solve the problems that occur when the flexible display is bent or folded. important.
  • the present invention provides a flexible display device and a method for manufacturing the same, which can prevent the backlight module and the display panel from being peeled off or shifted during bending or folding.
  • a specific technical solution provided by the present invention is to provide a flexible display device including a flexible back plate, an organic light emitting diode, a lower polarizer, a TFT array, an upper polarizer, and a CF substrate, the organic light emitting diode, the lower polarizer, and a TFT.
  • the array and the upper polarizer are stacked on the flexible backplane in a direction away from the flexible backplane, the organic light emitting diode is a white OLED, and the flexible display device further includes a CF substrate, and the CF substrate Located between the TFT array and the upper polarizer.
  • the organic light emitting diode includes a first electrode, a light emitting layer, a second electrode, and a first buffer layer, and the first electrode, the light emitting layer, the second electrode, and the first buffer layer are sequentially away from the flexible along The direction of the back plate is laminated on the flexible back plate, and the lower polarizer is provided on the first buffer layer.
  • the TFT array includes a plurality of thin film transistors arranged in an array, and each of the thin film transistors includes a second buffer layer, a gate, a gate insulating layer, an active layer, a source, a drain, and a passivation layer,
  • the second buffer layer is disposed on the lower polarizer.
  • the flexible display device further includes a liquid crystal layer, and the liquid crystal layer is located between the TFT array and the CF substrate.
  • the invention also provides a method for manufacturing a flexible display device, the method includes the steps:
  • a polarizer is attached to the TFT array to obtain the flexible display device.
  • organic light emitting diodes formed in sequence on the flexible backplane specifically include:
  • a first electrode, a light emitting layer, a second electrode, and a first buffer layer are sequentially deposited on the flexible back plate to obtain the organic light emitting diode.
  • the step of preparing a TFT array on a side of the lower polarizer facing away from the organic light emitting diode specifically includes:
  • a passivation layer is deposited on the surfaces of the active layer, source, and drain.
  • the preparation method further includes:
  • a CF substrate is prepared on the TFT array.
  • the manufacturing method further includes:
  • Liquid crystal is filled between the CF substrate and the TFT array.
  • the present invention also provides a flexible display device including a flexible back plate, an organic light emitting diode, a lower polarizer, a TFT array, and an upper polarizer.
  • the organic light emitting diode, the lower polarizer, the TFT array, and the upper polarizer are sequentially arranged along the The direction away from the flexible backplane is stacked on the flexible backplane.
  • the organic light emitting diode includes a first electrode, a light emitting layer, a second electrode, and a first buffer layer, and the first electrode, the light emitting layer, the second electrode, and the first buffer layer are sequentially away from the flexible along The direction of the back plate is laminated on the flexible back plate, and the lower polarizer is provided on the first buffer layer.
  • the TFT array includes a plurality of thin film transistors arranged in an array, and each of the thin film transistors includes a second buffer layer, a gate, a gate insulating layer, an active layer, a source, a drain, and a passivation layer,
  • the second buffer layer is disposed on the lower polarizer.
  • the flexible display device includes an organic light emitting diode, a lower polarizer, a TFT array, and an upper polarizer, which are stacked on the flexible backplane and stacked in a direction away from the flexible backplane in order.
  • the lower polarizer is built in between the flexible back plate and the TFT array, thereby avoiding light leakage and color misregistration caused by organic light emitting diodes, peeling and shifting of the lower polarizer and the TFT array when the flexible display device is bent or folded.
  • FIG. 1 is a schematic structural diagram of a flexible display device in Embodiment 1;
  • FIG. 3 is a schematic structural diagram of a flexible display device in Embodiment 2.
  • FIG. 3 is a schematic structural diagram of a flexible display device in Embodiment 2.
  • the flexible display device in this embodiment includes an organic light emitting diode 1, a display panel 2, and a flexible back plate 3.
  • the display panel 2 includes a lower polarizer 21, a TFT array 22 and an upper polarizer 23, and an organic light emitting diode 1.
  • the lower polarizer 21, the TFT array 22, and the upper polarizer 23 are stacked on the flexible back plate 3 in a direction away from the flexible back plate 3 in order.
  • the flexible display device in this embodiment is an OLED display, and the organic light emitting diode 1 is used as a self-emitting layer of the OLED display. The structure of the flexible display device will be specifically described below.
  • the organic light emitting diode 1 and the lower polarizer 21 are located between the flexible back plate 3 and the TFT array 22.
  • the organic light emitting diode 1 and the lower polarizer 21 are built between the flexible back plate 3 and the TFT array 22 to realize the organic light emitting diode 1
  • the integrated design with the display panel 2 avoids the problems of light leakage and color shift caused by the organic light emitting diode 1 and the display panel 2 being peeled off or shifted when the flexible display device is bent or folded.
  • the organic light emitting diode 1 includes a first electrode 12, a light emitting layer 13, a second electrode 14, and a first buffer layer 15.
  • the first electrode 12, the light emitting layer 13, the second electrode 14, and the first buffer layer 15 are sequentially away from the flexible back.
  • the direction of the plate 3 is stacked between the flexible back plate 3 and the lower polarizer 21, that is, the first electrode 12, the light emitting layer 13, the second electrode 14, the first buffer layer 15 and the lower polarizer 21 are built in the flexible back plate. 3 and TFT array 22.
  • the light emitting layer 13 includes a hole transport layer, a hole injection layer, an organic semiconductor layer, an electron injection layer, an electron transport layer, a hole transport layer, a hole injection layer, an organic semiconductor layer, an electron injection layer, and an electron transport layer.
  • the first electrode 12 is an anode of the organic light emitting diode 1
  • the second electrode 14 is an organic light emitting diode 1 cathode.
  • the first electrode 12 may also be the cathode of the organic light emitting diode 1
  • the second electrode 14 may be the anode of the organic light emitting diode 1.
  • the hole transport layer, the hole injection layer, the organic semiconductor layer, the electron injection layer, and the electrons is stacked between the second electrode 14 and the first electrode 12 in a direction away from the second electrode 14 in order.
  • the TFT array 22 in this embodiment is directly disposed on the lower polarizer 21 and includes a plurality of thin film transistors disposed in an array.
  • Each thin film transistor includes a second buffer layer 100, a gate electrode 101, a gate insulation layer 102, and an active layer. 103.
  • the second buffer layer 100 is disposed on the lower polarizer 21.
  • the lower polarizer 21 is the substrate of the thin film transistor.
  • the structure of the thin film transistor is a bottom-gate structure.
  • the gate 101 and the gate insulating layer 102 are disposed on the second buffer layer 100.
  • the gate insulating layer 102 covers the gate 101.
  • the source layer 103 is disposed on the gate insulating layer 102 and is disposed corresponding to the gate 101.
  • the source 104 and the drain 105 are located at two ends of the active layer 103 and connected to the active layer 103, respectively.
  • the source 104 is located on the active layer 103.
  • One end of the active layer 103 covers the edge of the active layer 103
  • the drain 105 is located at the other end of the active layer 103 and covers the edge of the active layer 103
  • a passivation layer 106 is provided on the source 104 and the drain 105 and covers the source 104 , Drain 105, and passivation layer 106 protect the source 104 and drain 105.
  • the thin film transistor further includes a pixel electrode 107.
  • the pixel electrode 107 is disposed on the passivation layer 106 and is connected to the drain electrode 105 through a via hole.
  • the material of the pixel electrode layer 107 is ITO.
  • the organic light emitting diode 1 in this embodiment may emit red, green, or blue light, or may be a blue OLED.
  • the color conversion layer is provided to convert blue light to red, green, or white light OLED.
  • the flexible display device further includes a CF substrate 4.
  • the CF substrate 4 is located between the TFT array 22 and the upper polarizer 23.
  • the light emitted by the white OLED passes through the CF substrate 4 and forms a color.
  • the CF substrate 4 includes a color filter film 41 and a flexible substrate 42.
  • the color filter film 41 is disposed on a side of the flexible substrate 42 facing the liquid crystal layer 24.
  • the upper polarizer 23 is attached to the surface of the flexible substrate 42.
  • the flexible back plate 3 serves as a substrate of the TFT array 22, and the flexible substrate 42 serves as a substrate of the color filter film 41.
  • the TFT array 22 further includes a flat layer 108 covering the surface of the TFT array 22.
  • the side facing the CF substrate 4 is a flat surface, and the CF substrate 4 is attached. Attached to the surface of the flat layer 108.
  • the flexible back plate 3 in this embodiment includes a flexible layer 31 and a third buffer layer 32.
  • the third buffer layer 32 is located between the flexible layer 31 and the first electrode 12.
  • the material of the flexible layer 31 is polyimide (PI).
  • PI polyimide
  • this embodiment further provides a method for manufacturing the flexible display device, and the method includes the following steps:
  • An organic light emitting diode 1 and a lower polarizer 21 are sequentially formed on the flexible backplane, as shown in FIG. 2d.
  • a TFT array 22 is prepared on a side of the lower polarizer 21 facing away from the organic light emitting diode 1.
  • a polarizer 23 is attached to the TFT array 22 to obtain a flexible display device, as shown in FIG. 2i.
  • step S1 the flexible backplane is obtained through the following steps:
  • the first glass 10 substrate is coated with a flexible material to form a flexible back plate 3.
  • the flexible back plate 3 includes a flexible layer 31 and a third buffer layer 32.
  • the surface of the first glass substrate 10 is coated with a flexible material and cured by heating.
  • the flexible layer 31, and then a third buffer layer 32 is deposited on the surface of the flexible layer 31.
  • the material of the flexible layer 31 is polyimide (PI), as shown in FIG. 2b.
  • Step S2 specifically includes:
  • the light-emitting layer 13 includes a hole-transport layer, a hole-injection layer, an organic semiconductor layer, an electron-injection layer, and an electron-transport layer.
  • Deposition of the light-emitting layer 13 includes sequentially depositing a hole-transport layer on the first electrode 12, The hole injection layer, the organic semiconductor layer, the electron injection layer, and the electron transport layer are used to obtain the light emitting layer 13.
  • the third buffer layer 32 is located between the flexible layer 31 and the first electrode 12. Then, the surface of the first buffer layer 15 is pasted. A polarizer 21 is attached, as shown in FIG. 2d.
  • step S3 includes:
  • a second buffer layer 100 is deposited on a side of the lower polarizer 21 facing away from the organic light emitting diode 1, that is, a second buffer layer 100 is deposited on a side of the lower polarizer 21 facing away from the first buffer layer 15.
  • S36 Deposit a passivation layer 106 on the surfaces of the active layer 103, the source 104, and the drain 105, as shown in FIG. 2e;
  • a pixel electrode 107 is prepared on the passivation layer 106, and the pixel electrode 107 is connected to the drain 105 through a via hole, as shown in FIG. 2f;
  • a flat layer 108 is formed on the passivation layer 106 and the pixel electrode 107, as shown in FIG. 2g.
  • the organic light emitting diode 1 in this embodiment is a white OLED. Therefore, before step S4, the preparation method further includes:
  • a CF substrate 4 is prepared on the TFT array 22, as shown in FIG. 2h.
  • preparing the CF substrate 4 includes:
  • the preparation method in this embodiment further includes:
  • the first glass substrate 10 is peeled off. After the first glass substrate 10 is peeled off, a flexible display device using the flexible back plate 3 as a substrate is obtained, as shown in FIG. 2i.
  • the structure of the organic light emitting diode in this embodiment is the same as the structure of the organic light emitting diode in Embodiment 1.
  • This embodiment differs from Embodiment 1 in that the flexible display device is an LCD, and the organic light emitting diode is used as the LCD. Backlight.
  • the display panel 2 includes a lower polarizer 21, a TFT array 22, an upper polarizer 23 and a liquid crystal layer 24.
  • the liquid crystal layer 24 is provided between the TFT array 22 and the CF substrate 4.
  • This embodiment also provides a method for manufacturing the above-mentioned flexible display device.
  • the manufacturing method is different from the embodiment 1 in that after preparing the CF substrate 4, the CF substrate 4 and the TFT array 22 are arranged in a box; on the CF substrate 4 Liquid crystal is filled between the TFT array 22 and a liquid crystal layer 24 is formed.

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Abstract

本发明提供一种柔性显示装置及其制备方法，所述柔性显示装置柔性背板、有机发光二极管、下偏光片、TFT阵列及上偏光片，所述有机发光二极管、下偏光片、TFT阵列及上偏光片沿着依次远离所述柔性背板的方向叠层设置于所述柔性背板上。

Description

柔性显示装置及其制备方法 技术领域
本发明涉及柔性显示技术领域，尤其涉及一种柔性显示装置及其制备方法。
 背景技术
柔性显示器是继阴极射线管显示器(Cathode Ray Tube，CRT)和平板显示器（Flat Panel Display ，FPD）之后的下一代电子显示技术，是显示技术史上的又一次革命。柔性显示器具有外形薄、重量轻、系统稳定、可弯曲且携带方便等优点，可以集成到纺织品上经久耐磨，可以自由设计，因此，在显示领域得到广泛关注。
然而，现有的柔性显示器在弯曲或折叠时容易出现背光源与柔性面板剥离、偏移的情况，从而出现显示漏光、色偏等异常，因而解决柔性显示器在弯曲或折叠时出现的问题显得非常重要。
 技术问题
为了解决上述问题，本发明提供一种柔性显示装置及其制备方法，能够避免在弯曲或折叠时出现背光模组与显示面板剥离、偏移的情况。
 技术解决方案
本发明提出的具体技术方案为：提供一种柔性显示装置，包括柔性背板、有机发光二极管、下偏光片、TFT阵列、上偏光片及CF基板，所述有机发光二极管、下偏光片、TFT阵列及上偏光片沿着依次远离所述柔性背板的方向叠层设置于所述柔性背板上，所述有机发光二极管为白光OLED，所述柔性显示装置还包括CF基板，所述CF基板位于所述TFT阵列与所述上偏光片之间。
进一步地，其中所述有机发光二极管包括第一电极、发光层、第二电极及第一缓冲层，所述第一电极、发光层、第二电极及第一缓冲层沿着依次远离所述柔性背板的方向叠层设置于所述柔性背板上，所述下偏光片设于所述第一缓冲层上。
进一步地，其中所述TFT阵列包括阵列设置的多个薄膜晶体管，每个所述薄膜晶体管包括第二缓冲层、栅极、栅绝缘层、有源层、源极、漏极、钝化层，所述第二缓冲层设于所述下偏光片上。
进一步地，其中所述柔性显示装置还包括液晶层，所述液晶层位于所述TFT阵列与所述CF基板之间。
本发明还提供了一种柔性显示装置的制备方法，所述制备方法包括步骤：
提供一柔性背板；
在所述柔性背板上依次形成有机发光二极管和下偏光片；
在所述下偏光片背离所述有机发光二极管的一面制备TFT阵列；以及
在所述TFT阵列上贴附上偏光片，获得所述柔性显示装置。
进一步地，其中在所述柔性背板上依次形成有机发光二极管具体包括：
在所述柔性背板上依次沉积第一电极、发光层、第二电极、第一缓冲层，获得所述有机发光二极管。
进一步地，其中在所述下偏光片背离所述有机发光二极管的一面制备TFT阵列步骤具体包括：
在所述下偏光片背离所述有机发光二极管的一面沉积第二缓冲层；
在所述第二缓冲层的表面图案化形成栅极；
在所述第二缓冲层、栅极表面沉积栅绝缘层；
在所述栅绝缘层的表面图案化形成有源层；
在所述栅绝缘层、有源层的表面图案化形成源极、漏极；以及
在所述有源层、源极、漏极的表面沉积钝化层。
进一步地，其中在所述TFT阵列上贴附上偏光片之前，所述制备方法还包括：
在所述TFT阵列上制备CF基板。
进一步地，其中在所述TFT阵列上制备CF基板之后，所述制备方法还包括：
在所述CF基板与所述TFT阵列之间填充液晶。
本发明还提供了一种柔性显示装置，包括柔性背板、有机发光二极管、下偏光片、TFT阵列及上偏光片，所述有机发光二极管、下偏光片、TFT阵列及上偏光片沿着依次远离所述柔性背板的方向叠层设置于所述柔性背板上。
进一步地，其中所述有机发光二极管包括第一电极、发光层、第二电极及第一缓冲层，所述第一电极、发光层、第二电极及第一缓冲层沿着依次远离所述柔性背板的方向叠层设置于所述柔性背板上，所述下偏光片设于所述第一缓冲层上。
进一步地，其中所述TFT阵列包括阵列设置的多个薄膜晶体管，每个所述薄膜晶体管包括第二缓冲层、栅极、栅绝缘层、有源层、源极、漏极、钝化层，所述第二缓冲层设于所述下偏光片上。
 有益效果
本发明提出的柔性显示装置包括有机发光二极管、沿着依次远离所述柔性背板的方向叠层设置于所述柔性背板上的下偏光片、TFT阵列及上偏光片，将有机发光二极管与下偏光片内置于柔性背板与TFT阵列之间，从而避免在柔性显示装置弯曲或折叠时出现有机发光二极管、下偏光片与TFT阵列剥离、偏移而造成漏光、色偏的情况。
 附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
图1为实施例1中柔性显示装置的结构示意图；
图2a至2i为实施例1中柔性显示装置的制备方法流程图；及
图3为实施例2中柔性显示装置的结构示意图。
 本发明的最佳实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。在附图中，相同的标号将始终被用于表示相同的元件。
实施例1
参照图1，本实施例中的柔性显示装置包括有机发光二极管1、显示面板2及柔性背板3，显示面板2包括下偏光片21、TFT阵列22及上偏光片23，有机发光二极管1、下偏光片21、TFT阵列22及上偏光片23沿着依次远离柔性背板3的方向叠层设置于柔性背板3上。本实施例中的柔性显示装置为OLED显示器，有机发光二极管1作为OLED显示器的自发光层，下面具体对柔性显示装置的结构进行描述。
有机发光二极管1、下偏光片21位于柔性背板3与TFT阵列22之间，通过将有机发光二极管1与下偏光片21内置于柔性背板3与TFT阵列22之间，实现有机发光二极管1与显示面板2一体设计，从而在柔性显示装置弯曲或折叠时避免出现有机发光二极管1与显示面板2剥离、偏移而造成漏光、色偏的问题。
有机发光二极管1包括第一电极12、发光层13、第二电极14及第一缓冲层15，第一电极12、发光层13、第二电极14及第一缓冲层15沿着依次远离柔性背板3的方向叠层设置于柔性背板3与下偏光片21之间，即第一电极12、发光层13、第二电极14、第一缓冲层15及下偏光片21内置于柔性背板3与TFT阵列22之间。
具体地，发光层13包括空穴传输层、空穴注入层、有机半导体层、电子注入层、电子传输层，空穴传输层、空穴注入层、有机半导体层、电子注入层、电子传输层沿着依次远离第一电极12的方向叠层设置于第一电极12与第二电极14之间，其中，第一电极12为有机发光二极管1的阳极，第二电极14为有机发光二极管1的阴极。当然，第一电极12也可以为有机发光二极管1的阴极，第二电极14为有机发光二极管1的阳极，此时，空穴传输层、空穴注入层、有机半导体层、电子注入层、电子传输层沿着依次远离第二电极14的方向叠层设置于第二电极14与第一电极12之间。
本实施例中的TFT阵列22直接设置于下偏光片21上，其包括阵列设置的多个薄膜晶体管，每个薄膜晶体管包括第二缓冲层100、栅极101、栅绝缘层102、有源层103、源极104、漏极105、钝化层106，第二缓冲层100设于下偏光片21上。下偏光片21即为薄膜晶体管的衬底，其中，薄膜晶体管的结构为底栅结构，栅极101、栅绝缘层102设于第二缓冲层100上，栅绝缘层102覆盖栅极101，有源层103设于栅绝缘层102上并与栅极101对应设置，源极104、漏极105位于有源层103的两端并分别与有源层103连接，源极104位于有源层103的一端并覆盖有源层103的边缘，漏极105位于有源层103的另一端并覆盖有源层103的边缘，钝化层106设于源极104、漏极105上并覆盖源极104、漏极105，钝化层106起到保护源极104、漏极105的作用。
薄膜晶体管还包括像素电极107，像素电极107设于钝化层106上并通过过孔与漏极105连接，其中，像素电极层107的材质为ITO。
本实施例中的有机发光二极管1可以发出红光、绿光或蓝光，也可以是蓝光OLED，通过设置色变换层来将蓝光转换为红光、绿光，也可以是白光OLED，通过设置CF基板来将白光转换为红、绿、蓝三种颜色的光。具体地，当有机发光二极管1为白光OLED时，柔性显示装置还包括CF基板4，CF基板4位于TFT阵列22与上偏光片23之间，白光OLED发出的光线经过CF基板4后形成彩色。CF基板4包括彩色滤膜41和柔性基板42，彩色滤膜41设置于柔性基板42朝向液晶层24的一面，上偏光片23贴附于柔性基板42的表面。柔性背板3作为TFT阵列22的基板，柔性基板42作为彩色滤膜41的基板。
为了能够让TFT阵列22更好的与CF基板4贴附，TFT阵列22还包括平坦层108，平坦层108覆盖于TFT阵列22的表面，其朝向CF基板4的一面为平面，CF基板4贴附于平坦层108的表面。
本实施例中的柔性背板3包括柔性层31、第三缓冲层32。第三缓冲层32位于柔性层31与第一电极12之间。柔性层31的材质为聚酰亚胺（Polyimide，PI）。在柔性层31与第一电极12之间设置第三缓冲层32可以进一步减少柔性显示装置在弯曲或折叠过程中产生的应力，避免柔性层31与第一电极12剥离。
参照图2a～2i所示，本实施例还提供了上述柔性显示装置的制备方法，所述制备方法包括步骤：
S1、提供一柔性背板；
S2、在柔性背板上依次形成有机发光二极管1和下偏光片21，如图2d所示；
S3、在下偏光片21背离有机发光二极管1的一面制备TFT阵列22；
S4、在TFT阵列22上贴附上偏光片23，获得柔性显示装置，如图2i所示。
具体地，在步骤S1中，柔性背板通过以下步骤获得：
S11、提供一第一玻璃基板10，如图2a所示；
S12、在第一玻璃10基板涂覆柔性材料形成柔性背板3，柔性背板3包括柔性层31、第三缓冲层32，先在第一玻璃基板10的表面涂覆柔性材料并加热固化形成柔性层31，然后在柔性层31的表面沉积第三缓冲层32，柔性层31的材质为聚酰亚胺（Polyimide，PI），如图2b所示。
步骤S2具体包括：
在柔性背板3上依次沉积第一电极12、发光层13、第二电极14、第一缓冲层15、下偏光片21，在第一玻璃基板10的表面制备获得有机发光二极管1，如图2c所示，其中，发光层13包括空穴传输层、空穴注入层、有机半导体层、电子注入层、电子传输层，沉积发光层13包括在第一电极12上依次沉积空穴传输层、空穴注入层、有机半导体层、电子注入层、电子传输层，获得发光层13，第三缓冲层32位于柔性层31与第一电极12之间，然后，在第一缓冲层15的表面贴附下偏光片21，如图2d所示。
具体地，步骤S3具体包括：
S31、在下偏光片21背离有机发光二极管1 的一面沉积第二缓冲层100，即在下偏光片21背离第一缓冲层15的一面沉积第二缓冲层100；
S32、在第二缓冲层100的表面图案化形成栅极101，其中，图案化包括光刻工艺；
S33、在第二缓冲层100、栅极101表面沉积栅绝缘层102；
S34、在栅绝缘层102的表面图案化形成有源层103，其中，图案化包括光刻工艺；
S35、在栅绝缘层102、有源层103的表面图案化形成源极104、漏极105，其中，图案化包括光刻工艺；
S36、在有源层103、源极104、漏极105的表面沉积钝化层106，如图2e所示；
S37、在钝化层106上制备像素电极107，像素电极107通过过孔与漏极105连接，如图2f所示；
S38、在钝化层106、像素电极107上形成平坦层108，如图2g所示。
本实施例中的有机发光二极管1为白光OLED，因此，在步骤S4之前，所述制备方法还包括：
S40、在TFT阵列22上制备CF基板4，如图2h所示；
其中，制备CF基板4具体包括：
S401、提供一第二玻璃基板；
S402、在第二玻璃基板的表面涂覆柔性材料形成柔性基板42；
S403、在柔性基板42的表面贴附彩色滤膜41，以在第二玻璃基板表面形成CF基板4；
S404、将第二玻璃基板上的CF基板4转印至TFT阵列22上；
S405、剥离第二玻璃基板。
在步骤S4之后，本实施例中的制备方法还包括：
S5、剥离第一玻璃基板10，将第一玻璃基板10剥离后，获得以柔性背板3为基板的柔性显示装置，如图2i所示。
实施例2
参照图3，本实施例中有机发光二极管的结构与实施例1中有机发光二极管的结构相同，本实施例与实施例1不同之处在于柔性显示装置为LCD，其中，有机发光二极管作为LCD的背光源。显示面板2包括下偏光片21、TFT阵列22、上偏光片23及液晶层24。液晶层24设于TFT阵列22与CF基板4之间。
本实施例还提供了上述柔性显示装置的制备方法，所述制备方法与实施例1不同之处在于，在制备CF基板4之后，将CF基板4与TFT阵列22对盒设置；在CF基板4与TFT阵列22之间填充液晶，形成液晶层24。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (12)

  1. 一种柔性显示装置，包括柔性背板、有机发光二极管、下偏光片、TFT阵列、上偏光片及CF基板，所述有机发光二极管、下偏光片、TFT阵列及上偏光片沿着依次远离所述柔性背板的方向叠层设置于所述柔性背板上，所述有机发光二极管为白光OLED，所述柔性显示装置还包括CF基板，所述CF基板位于所述TFT阵列与所述上偏光片之间。
  2. 根据权利要求1所述的柔性显示装置，其中所述有机发光二极管包括第一电极、发光层、第二电极及第一缓冲层，所述第一电极、发光层、第二电极及第一缓冲层沿着依次远离所述柔性背板的方向叠层设置于所述柔性背板上，所述下偏光片设于所述第一缓冲层上。
  3. 根据权利要求1所述的柔性显示装置，其中所述TFT阵列包括阵列设置的多个薄膜晶体管，每个所述薄膜晶体管包括第二缓冲层、栅极、栅绝缘层、有源层、源极、漏极、钝化层，所述第二缓冲层设于所述下偏光片上。
  4. 根据权利要求1所述的柔性显示装置，其中所述柔性显示装置还包括液晶层，所述液晶层位于所述TFT阵列与所述CF基板之间。
  5. 一种柔性显示装置的制备方法，所述制备方法包括步骤：
    提供一柔性背板；
    在所述柔性背板上依次形成有机发光二极管和下偏光片；
    在所述下偏光片背离所述有机发光二极管的一面制备TFT阵列；以及
    在所述TFT阵列上贴附上偏光片，获得所述柔性显示装置。
  6. 根据权利要求5所述的制备方法，其中在所述柔性背板上依次形成有机发光二极管具体包括：
    在所述柔性背板上依次沉积第一电极、发光层、第二电极、第一缓冲层，获得所述有机发光二极管。
  7. 根据权利要求5所述的制备方法，其中在所述下偏光片背离所述有机发光二极管的一面制备TFT阵列步骤具体包括：
    在所述下偏光片背离所述有机发光二极管的一面沉积第二缓冲层；
    在所述第二缓冲层的表面图案化形成栅极；
    在所述第二缓冲层、栅极表面沉积栅绝缘层；
    在所述栅绝缘层的表面图案化形成有源层；
    在所述栅绝缘层、有源层的表面图案化形成源极、漏极；以及
    在所述有源层、源极、漏极的表面沉积钝化层。
  8. 根据权利要求5所述的制备方法，其特征在于，在所述TFT阵列上贴附上偏光片之前，所述制备方法还包括：
    在所述TFT阵列上制备CF基板。
  9. 根据权利要求5所述的制备方法，其中在所述TFT阵列上制备CF基板之后，所述制备方法还包括：
    在所述CF基板与所述TFT阵列之间填充液晶。
  10. 一种柔性显示装置，包括柔性背板、有机发光二极管、下偏光片、TFT阵列及上偏光片，所述有机发光二极管、下偏光片、TFT阵列及上偏光片沿着依次远离所述柔性背板的方向叠层设置于所述柔性背板上。
  11. 根据权利要求10所述的柔性显示装置，其中所述有机发光二极管包括第一电极、发光层、第二电极及第一缓冲层，所述第一电极、发光层、第二电极及第一缓冲层沿着依次远离所述柔性背板的方向叠层设置于所述柔性背板上，所述下偏光片设于所述第一缓冲层上。
  12. 根据权利要求10所述的柔性显示装置，其中所述TFT阵列包括阵列设置的多个薄膜晶体管，每个所述薄膜晶体管包括第二缓冲层、栅极、栅绝缘层、有源层、源极、漏极、钝化层，所述第二缓冲层设于所述下偏光片上。
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