WO2020015426A1 - 植物照明用的发光装置 - Google Patents

植物照明用的发光装置 Download PDF

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Publication number
WO2020015426A1
WO2020015426A1 PCT/CN2019/084592 CN2019084592W WO2020015426A1 WO 2020015426 A1 WO2020015426 A1 WO 2020015426A1 CN 2019084592 W CN2019084592 W CN 2019084592W WO 2020015426 A1 WO2020015426 A1 WO 2020015426A1
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Prior art keywords
phosphor
light
far
substrate
blue light
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PCT/CN2019/084592
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English (en)
French (fr)
Inventor
林金填
蔡金兰
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旭宇光电（深圳）股份有限公司
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Publication of WO2020015426A1 publication Critical patent/WO2020015426A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the invention belongs to the field of lighting technology, and particularly relates to a light-emitting device for plant lighting.
  • Light environment is one of the important physical environmental factors indispensable for plant growth and development. It is an important technology to control various stages of plant growth and development through light quality regulation. Therefore, plant lighting technology is currently widely used in various agricultural fields such as agricultural production, fruit and vegetable cultivation, and flower cultivation. Although the scale of plant lighting applications is not as extensive as that of general lighting, in view of its superiority and particularity, it has gradually been recognized by the market, and the market demand has gradually increased.
  • Photoreceptors are the key for plants to feel changes in the external environment.
  • the main photoreceptors are photosensitizing pigments that absorb red / far-red light.
  • Photosensitive pigments are a class of pigment proteins that reverse the absorption of red and far-red light, participate in photomorphogenesis, and regulate plant development.
  • light (R) and far red light (far Red light (FR) is extremely sensitive and plays an important regulatory role in the entire growth and development process of plants from germination to maturity.
  • the two types of light absorption can be reversed by red light and far red light.
  • photosynthetic pigments Pr, Pfr
  • the complete LED (Light Emitting Diode (light emitting diode) plant lighting solution requires not only 450nm blue light and 660nm red light, but also 730nm far red light. Dark blue light (450nm) and red light (660nm) can provide the spectrum required for photosynthesis, and far red light (730nm) can control the entire process of plants from germination to vegetative growth to flowering.
  • the purpose of the present invention is to provide a light-emitting device for plant lighting, which aims to solve the technical problems of high cost and unsatisfactory light quantum efficiency of existing light-emitting devices for plant lighting.
  • the invention provides a light-emitting device for plant lighting, which includes a substrate and a lens seamlessly connected to the substrate.
  • the substrate is provided with a groove, and the space formed by the substrate and the lens is provided with the recess.
  • a blue LED chip, a phosphor adhesive layer, and a blue light absorption layer are sequentially stacked in the slot, and the phosphor adhesive layer contains a far-red phosphor; the chemical formula of the far-red phosphor is: A 3- x M y Ga 5-yz O 12-y N y : (zCr 3+ , xCe 3+ ); wherein A is selected from at least one of Lu and Y, and A must contain Lu, and M is selected from Si and Zr And at least one of Hf; 0.001 ⁇ x ⁇ 0.05, 0.01 ⁇ z ⁇ 0.08, and 0.01 ⁇ y ⁇ 0.8.
  • the light-emitting device provided by the present invention is a semiconductor light-emitting device for plant lighting.
  • the light-emitting device uses a blue-light LED chip to match a unique far-red phosphor and simultaneously uses a blue-light absorbing layer to effectively absorb blue light. 730nm far-red light emission, the light-emitting device is significantly lower in production cost than existing light-emitting devices that directly use 730nm chips; and the invention uses far-red phosphors suitable for blue light excitation with high stability and high external quantum efficiency. Characteristics: When the blue LED chip is excited, the photosynthetic photon flux and stability of the overall light-emitting device are higher than the photosynthetic photon flux directly using the 730nm chip. Therefore, the light-emitting device of the present invention has a very wide application prospect in plant lighting.
  • FIG. 1 is a schematic structural diagram of a light emitting device according to the present invention.
  • Embodiment 3 is an emission spectrum diagram of a light emitting device according to Embodiment 2 of the present invention.
  • first and second are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "plurality” is two or more, unless specifically defined otherwise.
  • An embodiment of the present invention provides a light-emitting device for plant lighting.
  • the light-emitting device includes a substrate 116 and a lens 111 seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not shown in the figure).
  • a space formed by the substrate 116 and the lens 111 is provided with a blue LED chip 114, a phosphor adhesive layer 115, and a blue light absorbing layer 113, which are located in the groove and are stacked in this order, and the phosphor adhesive layer 115
  • the LED chip, the phosphor adhesive layer, and the blue light absorbing layer are laminated in the groove on the substrate surface; and the lens is located above the groove, and the substrate surface is seamlessly welded to form a seal between the groove and the lens. space.
  • the light-emitting device provided by the embodiment of the present invention is a semiconductor light-emitting device for plant lighting.
  • the light-emitting device uses a blue-light LED chip to match a unique far-red fluorescent powder and a blue-light absorbing layer to effectively absorb blue light, thereby realizing emission peaks.
  • Far-red light at 730 nm emits light, and the light-emitting device is significantly lower in production cost than existing light-emitting devices that directly use 730-nm chips; and in the embodiment of the present invention, far-red phosphors suitable for blue light excitation have high stability and high external quantum.
  • the photosynthetic photon flux and stability of the overall light-emitting device are higher than the photosynthetic photon flux of the 730nm chip directly. Therefore, the light-emitting device of the embodiment of the present invention has a very high efficiency in plant lighting. Wide application prospects.
  • the chemical formula of the far-red phosphor is: A 3-x M y Ga 5-yz O 12-y N y : (zCr 3+ , xCe 3+ ); Among them, A is selected from at least one of Lu and Y, and A must contain Lu, and M is selected from at least one of Si, Zr, and Hf; 0.001 ⁇ x ⁇ 0.05, 0.01 ⁇ z ⁇ 0.08, 0.01 ⁇ y ⁇ 0.8.
  • the embodiment of the present invention improves the luminous intensity of Cr 3+ by adopting a co-activated energy transfer form of Ce 3+ and Cr 3+ ; since the emission spectrum of Ce 3+ is just concentrated at about 500-620 nm, Ce 3+ emission energy can be changed by Cr 3 + Effective absorption to increase Cr 3+ emission intensity.
  • the emission wavelength is relatively short (between 710-720nm).
  • the present invention uses MN instead of Ga-O bond, so that the emission wavelength of the phosphor is further red-shifted to about 730 nm.
  • the Y ion radius is similar (Ce replaces the A site), and the Lu-containing phosphor has excellent reliability. Therefore, A in the far-red phosphor according to the embodiment of the present invention is selected from at least one of Lu and Y. Species, and must contain Lu.
  • the ionic radii of Cr 3+ and Ga 3+ are similar, and Cr replaces Ga.
  • A is Lu and M is Si.
  • the radii of Lu 3+ and Ce 3+ are closer, which can promote more Ce 3+ to enter the light-emitting center and improve the luminous intensity of the phosphor.
  • the crystallinity and stability of the Lu system garnet structure phosphor are better.
  • the element A is preferably Lu.
  • M is Si
  • its ionic radius is closest to Ga.
  • a suitable amount of Si-N instead of Ga-O has better crystal structure integrity and relatively high luminous intensity.
  • 0.005 ⁇ x ⁇ 0.03, 0.05 ⁇ z ⁇ 0.08, and 0.5 ⁇ y ⁇ 0.7 If the Ce 3+ doping concentration is too high, it will absorb more blue light, and Ce 3+ emission will be obvious, resulting in relatively less absorption of Cr 3+ , and the luminous intensity will decrease; if the doping concentration is too low, Ce 3+ -Cr 3+ energy The transfer effect is not obvious, and the luminous intensity is not significantly improved, so 0.005 ⁇ x ⁇ 0.03 is preferred.
  • the concentration of Cr 3+ determines its emission peak wavelength and emission intensity. If the concentration is too low, the emission wavelength of Cr 3+ is short and the emission intensity is low.
  • the concentration is too high, no radiation transition occurs between Cr 3+ and the luminous intensity decreases. Therefore, it is preferably 0.05 ⁇ z ⁇ 0.08.
  • the range of Si-N substituted Ga-O content also determines the emission peak wavelength and luminous intensity of the phosphor. If the y value is too low, the red shift of the peak wavelength of the phosphor is not obvious. If the y value is too high, the phosphor defects increase and crystallinity increases. Since it deteriorates and the light emission intensity decreases, y is preferably 0.5 ⁇ y ⁇ 0.7.
  • the far-red phosphor is preferably a Lu 2.99 Ce 0.01 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 phosphor.
  • the excitation and emission spectrum of the far-red phosphor is shown in FIG. 2. Phosphors can better achieve far-red light emission with an emission peak at 730nm.
  • the peak wavelength of the far-red phosphor is 710-730 nm; the wavelength of the blue LED chip is 440-470 nm, preferably 450 nm.
  • the number of the blue light LED chips is two or more; and / or, the blue light LED chips are flip-chip chips.
  • the phosphor powder adhesive layer is composed of the far-red light phosphor powder and a first encapsulant, and the total weight of the phosphor powder adhesive layer is 100%, The weight percentage of the far-red phosphor is 30% -90%, and the weight percentage of the first encapsulant is 10% -70%. In the embodiment of the present invention, the weight of the far-red phosphor and the encapsulant determines its encapsulation effect.
  • the dispensing forms a concave cup and the dispersion is uneven, which is not conducive to the package's luminous intensity and uniform light If the concentration of the far-red phosphor is too low, the dispensing will form a convex cup and the package emission intensity will decrease. Therefore, the best packaging effect is within the range of 30% -90%.
  • the blue light absorbing layer is composed of a pigment and a second encapsulant, and the pigment is 0.2% -5% by weight of the phosphor powder layer.
  • the pigment content used in the embodiments of the present invention depends on the specific composition of the phosphor used. If the blue light emission is strong, the pigment content is relatively high, and if the blue light emission is weak, the pigment content is relatively low. Too much or too little use of pigment will affect the luminous brightness of the phosphor package, and the effect is best in the range of 0.2% -5%.
  • the pigment has a light absorption of 97% or more in the wavelength range of 420-470 nm; the chemical formula of the pigment is: C 20 H 6 Br 2 N 2 Na 2 O 9 .
  • the blue light absorbing layer can generally be uniformly mixed with the phosphor powder layer, or the blue light absorption layer and the phosphor powder layer are separately disposed and located above the phosphor powder layer.
  • the blue light absorbing layer is located above the phosphor powder layer, so that the light source has better uniformity and consistency, and can prevent light spots from appearing due to uneven dispersion of the pigment and the phosphor.
  • the lens is a glass lens or a silicone lens; or, the lens is a hemispherical lens or a square lens.
  • the inner surface of the lens 111 is provided with a reflective layer 112 such that a light transmittance in a wavelength range of 500 nm to 620 nm is less than 3%.
  • the establishment of the reflective layer 112 is mainly used to reflect the light emitted by Ce 3+ with a wavelength of about 500-620nm. By reflecting the light in the range of 500-620nm, it can have a secondary excitation effect on the far-red phosphor, and On the one hand, yellow light can be avoided after packaging, so as not to affect the color purity of far-red light.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits blue light of 440nm, and the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits blue light of 450nm, and the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • Blue light absorber is selected. C 20 H 6 Br 2 N 2 Na 2 O 9 , the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment The mixture with silica gel is applied on the surface of the phosphor powder layer. The pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1, and the emission spectrum chart is shown in FIG.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits 460nm blue light, and the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • the blue light absorber is selected. C 20 H 6 Br 2 N 2 Na 2 O 9 , the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (the structure is a flip-chip structure), the semiconductor chip emits blue light at 470 nm, and the composition of the far-red phosphor is Lu 2.99 Ce 0.01 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • the blue light absorber is selected. C 20 H 6 Br 2 N 2 Na 2 O 9 , the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment The mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits blue light of 450nm, and the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 30% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits blue light of 450nm, and the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 50% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits blue light of 450nm, and the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 70% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits blue light of 450nm, and the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 90% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits 450nm blue light, and the far-red phosphor composition is Y 2.99 Ce 0.01 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits 450nm blue light, and the far-red phosphor composition is Lu 2.99 Ce 0.01 Zr 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits 450nm blue light, and the far-red phosphor composition is Lu 2.99 Ce 0.01 Hf 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (the structure is a flip-chip structure), the semiconductor chip emits 450nm blue light, and the far-red phosphor composition is Lu 2.999 Ce 0.001 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • the blue light absorber is selected. C 20 H 6 Br 2 N 2 Na 2 O 9 , the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (the structure is a flip-chip structure), the semiconductor chip emits 450nm blue light, and the far-red phosphor composition is Lu 2.995 Ce 0.005 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits blue light of 450nm, and the composition of far-red phosphor is Lu 2.95 Ce 0.05 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • the blue light absorber is selected. C 20 H 6 Br 2 N 2 Na 2 O 9 , the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits blue light of 450nm, and the composition of far-red phosphor is Lu 2.97 Ce 0.03 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits 450nm blue light, and the far-red phosphor composition is Lu 2.92 Ce 0.08 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • the blue light absorber is selected. C 20 H 6 Br 2 N 2 Na 2 O 9 , the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits blue light of 450nm, and the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.01 Ga 4.94 Cr 0.05 O 11.99 N 0.01 .
  • Blue light absorber is selected. C 20 H 6 Br 2 N 2 Na 2 O 9 , the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits blue light of 450nm, and the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.8 Ga 4.15 Cr 0.05 O 11.2 N 0.8 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits 450nm blue light, and the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.7 Ga 4.25 Cr 0.05 O 11.3 N 0.7 .
  • Blue light absorber is selected. C 20 H 6 Br 2 N 2 Na 2 O 9 , the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits blue light of 450nm, and the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.5 Ga 4.49 Cr 0.01 O 11.5 N 0.5 .
  • the blue light absorber is selected. C 20 H 6 Br 2 N 2 Na 2 O 9 , the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits blue light of 450nm, and the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.5 Ga 4.44 Cr 0.06 O 11.5 N 0.5 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a single blue light LED chip (structure is flip-chip structure), the semiconductor chip emits blue light of 450nm, and the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.5 Ga 4.47 Cr 0.03 O 11.5 N 0.5 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder. Light powder.
  • the component has two blue LED chips (structure is flip-chip structure), the semiconductor chip emits 450nm blue light, the composition of far-red phosphor is Lu 2.99 Ce 0.01 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 , blue light absorber C 20 H 6 Br 2 N 2 Na 2 O 9 is selected .
  • the far-red phosphor is mixed with silica gel and placed on the LED chip.
  • the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is The mixture of pigment and silica gel is coated on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer.
  • the emission intensity change of the light emitting device near 730nm is shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has three blue light LED chips (structure is flip-chip structure), the semiconductor chip emits blue light of 450nm, and the composition of far-red light phosphor is Lu 2.99 Ce 0.01 Si 0.5 Ga 4.45 Cr 0.05 O 11.5 N 0.5 .
  • Blue light absorber is selected.
  • C 20 H 6 Br 2 N 2 Na 2 O 9 the far-red phosphor is mixed with silica gel and placed on the LED chip, the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is a pigment
  • the mixture with silica gel is applied on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer, which emits light.
  • the emission intensity change of the device near 730nm is shown in Table 1.
  • a semiconductor light-emitting device for plant lighting directly emits light with an LED infrared chip of 730 nm.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a blue LED chip (structure is flip-chip structure), the semiconductor chip emits 450nm blue light, the composition of far-red phosphor is Lu 2.99 Ce 0.01 Ga 4.95 Cr 0.05 O 12 , and the blue light absorber is C 20 H 6 Br 2 N 2 Na 2 O 9 , the far-red phosphor is mixed with silica gel and placed on the LED chip.
  • the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor; the blue light absorber is pigment and silica gel.
  • the mixture is coated on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer. Changes in nearby emission intensity are shown in Table 1.
  • the light-emitting device includes a substrate 116 and a lens 111 that is seamlessly connected to the substrate.
  • the substrate 116 is provided with a groove (not labeled).
  • the substrate A space formed by 116 and the lens 111 is provided with a blue light LED chip 114, a phosphor glue layer 115, and a blue light absorption layer 113 which are located in a groove and are stacked in this order.
  • the phosphor glue layer 115 contains far-red fluorescence powder.
  • the component has a blue light LED chip (structure is flip-chip structure), the semiconductor chip emits 450nm blue light, the far-red phosphor composition is Lu 3 Ga 4.95 Cr 0.05 O 12 , and the blue light absorber is C 20 H 6 Br. 2 N 2 Na 2 O 9 , the far-red phosphor is mixed with silica gel and placed on the LED chip.
  • the far-red phosphor accounts for 80% of the total mass of the silica gel and phosphor;
  • the blue light absorber is a mixture of pigment and silica gel. It is coated on the surface of the phosphor powder layer.
  • the pigment weight accounts for 0.5% of the total weight of the silica gel and the phosphor.
  • the outermost part is seamlessly welded to the surface of the LED substrate with a glass lens.
  • the inner layer of the lens is provided with a reflective layer.
  • the emission intensity changes are shown in Table 1.
  • Example 1 Name LED chip peak wavelength Infrared luminescent material Phosphor powder in total mass ratio of silica gel and phosphor Maximum peak relative intensity (%) Device peak wavelength (nm)
  • Example 1 440nm * 1 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 80% 118 729
  • Example 2 450nm * 1 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 80% 130 729
  • Example 3 460nm * 1 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 80% 127 729
  • Example 4 470nm * 1 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 80% 105 729
  • Example 5 450nm * 1 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 30% 102 729
  • Example 6 450nm * 1 Lu2.99Ce0.01Si0.5G

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Abstract

一种植物照明用的发光装置，包括基板（116）和无缝连接所述基板（116）的透镜（111），所述基板（116）上设置有凹槽，所述基板（116）和所述透镜（111）形成的空间内设置有位于所述凹槽内且依次层叠设置的蓝光LED芯片（114）、荧光粉胶层（115）和蓝光吸收层（113），所述荧光粉胶层（115）中含有远红光荧光粉；所述远红光荧光粉的化学通式为：A 3-xM yGa 5-y-zO 12-yN y：(zCr 3+，xCe 3+)；其中，A选自Lu和Y中的至少一种，且A必含Lu，M选自Si、Zr和Hf中的至少一种；0.001≤x≤0.05，0.01≤z≤0.08，0.01≤y≤0.8。该发光装置在植物照明中具有非常广泛的应用前景。

Description

植物照明用的发光装置 技术领域
本发明属于照明技术领域，具体涉及一种植物照明用的发光装置。
 背景技术
光环境是植物生长发育不可缺少的重要物理环境因素之一，通过光质调节，控制植物生长发育的各个阶段是一项重要技术。因此，植物照明技术目前被广泛运用到了农业生产、果蔬种植、花卉培植等各项农作物领域。虽然植物照明应用规模不及通用照明那样广泛，但鉴于本身的优越性和特殊性，也逐渐得到市场的认可，市场需求日渐增长。
光受体是植物感受外界环境变化的关键，在植物光反应中，最主要的光受体就是吸收红光/远红光的光敏色素。光敏色素是一类对红光和远红光吸收有逆转效应、参与光形态建成、调节植物发育的色素蛋白，它对红光（red light，R）和远红光（far red light，FR）极其敏感，在植物从萌发到成熟的整个生长发育过程中都起到重要的调节作用。植物体内的光敏色素以两种较稳定的状态存在：红光吸收型（Pr，lmax=660nm）和远红光吸收型（Pfr，lmax=730nm）。两种光吸收型在红光和远红光照射下可以相互逆转。光敏色素相关的研究表明，光敏色素（Pr，Pfr）对植物形态的作用包括种子萌发、去黄化作用、茎的伸长、叶的扩展、避荫作用以及开花诱导等。因而完整的LED（Light Emitting Diode，发光二极管）植物照明方案，不仅需要450nm的蓝光和660nm的红光，也需要730nm的远红光。深蓝光（450nm）和红光（660nm）可提供光合作用所需的光谱，远红光（730nm）可控制植物从发芽到营养生长再到开花的整个过程。
 技术问题
现有植物照明用730nm远红光通常采用730nm芯片实现，其成本相当于同等尺寸大小蓝光芯片的10倍以上，且受制于芯片成分及技术影响，730nm芯片光量子效率提升空间有限。因此，现有技术有待改进。
 技术解决方案
本发明的目的在于提供一种植物照明用的发光装置，旨在解决现有植物照明用发光装置的成本高，且光量子效率不理想的技术问题。
为实现上述发明目的，本发明采用的技术方案如下：
本发明提供一种植物照明用的发光装置，包括基板和无缝连接所述基板的透镜，所述基板上设置有凹槽，所述基板和所述透镜形成的空间内设置有位于所述凹槽内且依次层叠设置的蓝光LED芯片、荧光粉胶层和蓝光吸收层，所述荧光粉胶层中含有远红光荧光粉；所述远红光荧光粉的化学通式为：A 3-xM yGa 5-y-zO 12-yN y:（zCr 3+,xCe 3+）；其中，A选自Lu和Y中的至少一种，且A必含Lu，M选自Si、Zr和Hf中的至少一种；0.001≤x≤0.05，0.01≤z≤0.08，0.01≤y≤0.8。
有益效果
本发明提供的发光装置是一种植物照明用的半导体的发光装置，该发光装置采用蓝光LED芯片匹配特有的远红光荧光粉、同时利用蓝光吸收层有效吸收蓝光的方式，可实现发射峰值位于730nm的远红光发光，该发光装置在制备成本上明显低于现有直接采用730nm芯片的发光装置；而且本发明采用适合蓝光激发的远红光荧光粉具有稳定性高、外量子效率高的特点，当蓝光LED芯片激发时，整体发光装置的光合光子通量和稳定性要高于直接采用730nm芯片的光合光子通量，因此本发明的发光装置在植物照明中具有非常广泛的应用前景。
 附图说明
图1为本发明的发光装置结构示意图；
图2为本发明的Lu 2.99Ce 0.01Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5荧光粉的激发和发射光谱图；
图3为本发明实施例2的发光装置的发射光谱图；
其中，附图标记如下：
111-透镜，112-反射层，113-蓝光吸收层，114-蓝光LED芯片，115-荧光粉胶层，116-基板。
 本发明的实施方式
为了使本发明要解决的技术问题、技术方案及有益效果更加清楚明白，以下结合实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
此外，术语“第一”、“第二”、仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本发明的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
本发明实施例提供了一种植物照明用的发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉；所述远红光荧光粉的化学通式为：A 3-xM yGa 5-y-zO 12-yN y:（zCr 3+,xCe 3+）；其中，A选自Lu和Y中的至少一种，且A必含Lu，M选自Si、Zr和Hf中的至少一种；0.001≤x≤0.05，0.01≤z≤0.08，0.01≤y≤0.8。
本发明实施例中，基板表面的凹槽内层叠设置LED芯片、荧光粉胶层和蓝光吸收层；而透镜位于凹槽上方，无缝焊接该基板表面，使凹槽与透镜之间形成一个密封空间。
本发明实施例提供的发光装置是一种植物照明用的半导体的发光装置，该发光装置采用蓝光LED芯片匹配特有的远红光荧光粉、同时蓝光吸收层有效吸收蓝光的方式，可实现发射峰值位于730nm的远红光发光，该发光装置在制备成本上明显低于现有直接采用730nm芯片的发光装置；而且本发明实施例采用适合蓝光激发的远红光荧光粉具有稳定性高、外量子效率高的特点，当蓝光LED芯片激发时，整体发光装置的光合光子通量和稳定性要高于直接采用730nm芯片的光合光子通量，因此本发明实施例的发光装置在植物照明中具有非常广泛的应用前景。
在本发明实施例的发光装置中，所述远红光荧光粉的化学通式为：A 3-xM yGa 5-y-zO 12-yN y:（zCr 3+,xCe 3+）；其中，A选自Lu和Y中的至少一种，且A必含Lu，M选自Si、Zr和Hf中的至少一种；0.001≤x≤0.05，0.01≤z≤0.08，0.01≤y≤0.8。本发明实施例通过采用Ce 3+和Cr 3+共激活能量传递形式提升了Cr 3+的发光强度；由于Ce 3+发射光谱刚好集中在500-620nm左右，Ce 3+发射能量能够被Cr 3+有效吸收进而提升Cr 3+发射强度。而单纯A 3-xGa 5-zO 12:（zCr 3+,xCe 3+）的发射波长相对较短（710-720nm之间），为了进一步将该体系荧光粉的发射波长调控至730nm左右，满足植物生长光照波段，本发明采用M-N替代Ga-O键，使荧光粉的发射波长进一步红移至730nm左右。基于Ce和Lu，Y离子半径较为相似（Ce替代A位），且含Lu荧光粉具有优异的可靠性，因此本发明实施例远红光荧光粉中的A选自Lu和Y中的至少一种，且必含Lu。而Cr 3+和Ga 3+离子半径较为相似，Cr替代Ga位置。
优选地，A为Lu，M为Si。首先，Lu 3+和Ce 3+半径更为接近，能够促进更多的Ce 3+进入发光中心，提升荧光粉发光强度，且Lu体系石榴石结构荧光粉的结晶性和稳定性较好，本发明优选A元素为Lu。当M为Si时，其离子半径和Ga最为接近，适量Si-N的替代Ga-O，其晶体结构完整性较好，发光强度相对较高。
更优选地，0.005≤x≤0.03，0.05≤z≤0.08，0.5≤y≤0.7。Ce 3+掺杂浓度过高会对蓝光吸收较多，Ce 3+发射明显，造成Cr 3+吸收相对较少，发光强度降低；若掺杂浓度太低的话，Ce 3+-Cr 3+能量传递效果不明显，发光强度提升不明显，因此优选为0.005≤x≤0.03。Cr 3+浓度决定这其发射峰值波长和发射强度，浓度过低，Cr 3+发射波长较短且发射强度较低；若浓度过大，Cr 3+之间发生无辐射跃迁，发光强度降低，因此优选地0.05≤z≤0.08。Si-N取代Ga-O含量范围同样决定着荧光粉的发射峰值波长和发光强度，若y值过低，荧光粉峰值波长红移不明显，若y值过高，荧光粉缺陷增多，结晶性变差，发光强度降低，因此y优选为0.5≤y≤0.7。
本发明实施例中，远红光荧光粉优选为Lu 2.99Ce 0.01Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5荧光粉，该远红光荧光粉的激发和发射光谱图如图2所示，用该荧光粉可以更好地实现发射峰值位于730nm的远红光发光。
进一步地，在本发明实施例的发光装置中，所述远红光荧光粉的峰值波长为710-730nm；所述蓝光LED芯片的波长为440-470nm，优选450nm。所述蓝光LED芯片的数量为2个或2个以上；和/或，所述蓝光LED芯片为倒装芯片。
进一步地，在本发明实施例的发光装置中，所述荧光粉胶层由所述远红光荧光粉和第一封装胶组成，且以所述荧光粉胶层的总重量为100%计，所述远红光荧光粉的重量百分比为30%-90%，所述第一封装胶的重量百分比为10%-70%。本发明实施例中，远红光荧光粉和封装胶的重量决定着其封装效果，若远红光荧光粉浓度过高，点胶形成凹杯且分散不均匀，不利于封装发光强度和发光均匀性；若远红光荧光粉浓度过低，点胶则会形成凸杯，封装发射强度降低。因此，在30%-90%的比例范围内封装效果最佳。
进一步地，在本发明实施例的发光装置中，所述蓝光吸收层由色素和第二封装胶组成，且所述色素为所述荧光粉胶层重量的0.2%-5%。本发明实施例所采用色素含量取决于所采用荧光粉具体组成，若发射蓝光较强，色素含量相对较高，若蓝光发射较弱，色素含量则相对较低。过多或过少使用色素会对荧光粉的封装发光亮度造成影响，而在0.2%-5%的比例范围内的效果最佳。
优选地，所述色素对波长在420-470nm区间的光吸收率为97%以上；所述色素的化学式为：C 20H 6Br 2N 2Na 2O 9。
在发光装置中，所述蓝光吸收层一般可以和荧光粉胶层均匀混合，或者蓝光吸收层和荧光粉胶层分开设置，位于荧光粉胶层上方。本发明实施例中优选地，所述蓝光吸收层位于荧光粉胶层上方，这样光源均匀性、一致性更好，可以避免色素和荧光粉分散不均匀造成光斑出现。
进一步地，在本发明实施例的发光装置中，所述透镜为玻璃透镜或硅胶透镜；或者，所述透镜为半球形透镜或方形透镜。
进一步地，在本发明实施例的发光装置中，如图1所示，所述透镜111的内表面设置有使波长在500nm-620nm区间的光透过率低于3%的反射层112。该反射层112的设立主要用于反射Ce 3+发射的波长位于500-620nm左右的光，通过反射该500-620nm范围内的光一方面可以对远红光荧光粉具有二次激发效果，另一方面还可以避免封装后出现黄光，以免影响远红光的色纯度。
本发明先后进行过多次试验，现举一部分试验结果作为参考对发明进行进一步详细描述，下面结合具体实施例进行详细说明。
实施例1
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出440nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例2
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示，发射光谱图如图3所示。
实施例3
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出460nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例4
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出470nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例5
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的30%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例6
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的50%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例7
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的70%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例8
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的90%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例9
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Y 2.99Ce 0.01Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例10
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Zr 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例11
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Hf 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例12
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.999Ce 0.001Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例13
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.995Ce 0.005Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例14
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.95Ce 0.05Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例15
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.97Ce 0.03Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例16
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.92Ce 0.08Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例17
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.01Ga 4.94Cr 0.05O 11.99N 0.01，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例18
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.8Ga 4.15Cr 0.05O 11.2N 0.8，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例19
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.7Ga 4.25Cr 0.05O 11.3N 0.7，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例20
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.5Ga 4.49Cr 0.01O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例21：
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.5Ga 4.44Cr 0.06O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例22
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有单一蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.5Ga 4.47Cr 0.03O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例23
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。光粉。
其中，组成部件有两个蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
实施例24
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有三个蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Si 0.5Ga 4.45Cr 0.05O 11.5N 0.5，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
对比例1
一种植物照明用半导体发光装置，该发光装置直接用730 nm 的LED红外芯片发光。
对比例2
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有1个蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 2.99Ce 0.01Ga 4.95Cr 0.05O 12，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
对比例3
一种植物照明用半导体发光装置，如图1所示，该发光装置包括基板116和无缝连接所述基板的透镜111，所述基板116上设置有凹槽（图未标注），所述基板116和所述透镜111形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片114、荧光粉胶层115和蓝光吸收层113，所述荧光粉胶层115中含有远红光荧光粉。
其中，组成部件有1个蓝光LED芯片（结构为倒装结构），半导体芯片发出450nm的蓝光，远红光荧光粉组成为Lu 3Ga 4.95Cr 0.05O 12，蓝光吸收剂选用C 20H 6Br 2N 2Na 2O 9，远红光荧光粉与硅胶混合后置于在LED芯片上，远红光荧光粉占硅胶和荧光粉总质量的80%；蓝光吸收剂为色素和硅胶的混合物，涂敷于荧光粉胶层表面，色素重量占硅胶和荧光粉总重的0.5%，最外部采用玻璃透镜无缝焊接于LED基板表面，透镜内层设置有反射层，该发光装置在730nm附近的发射强度变化如表1所示。
名称 LED芯片峰值波长 红外发光材料 分子式 荧光粉占硅胶和荧光粉总质量比例 最高峰值相对强度（%） 器件峰值波长（nm）
实施例1 440nm*1 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 80% 118 729
实施例2 450nm*1 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 80% 130 729
实施例3 460nm*1 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 80% 127 729
实施例4 470nm*1 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 80% 105 729
实施例5 450nm*1 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 30% 102 729
实施例6 450nm*1 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 50% 115 729
实施例7 450nm*1 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 70% 123 729
实施例8 450nm*1 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 90% 126 729
实施例9 450nm*1 Y2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 80% 122 729
实施例10 450nm*1 Lu2.99Ce0.01Zr0.5Ga4.45Cr0.05O11.5N0.5 80% 124 729
实施例11 450nm*1 Lu2.99Ce0.01Hf0.5Ga4.45Cr0.05O11.5N0.5 80% 110 729
实施例12 450nm*1 Lu2.999Ce0.001Si0.5Ga4.45Cr0.05O11.5N0.5 80% 115 729
实施例13 450nm*1 Lu2.995Ce0.005Si0.5Ga4.45Cr0.05O11.5N0.5 80% 125 729
实施例14 450nm*1 Lu2.95Ce0.05Si0.5Ga4.45Cr0.05O11.5N0.5 80% 117 729
实施例15 450nm*1 Lu2.97Ce0.03Si0.5Ga4.45Cr0.05O11.5N0.5 80% 127 729
实施例16 450nm*1 Lu2.92Ce0.08Si0.5Ga4.45Cr0.05O11.5N0.5 80% 110 729
实施例17 450nm*1 Lu2.99Ce0.01Si0.01Ga4.94Cr0.05O11.99N0.01 80% 125 721
实施例18 450nm*1 Lu2.99Ce0.01Si0.8Ga4.15Cr0.05O11.2N0.8 80% 124 730
实施例19 450nm*1 Lu2.99Ce0.01Si0.7Ga4.25Cr0.05O11.3N0.7 80% 129 729
实施例20 450nm*1 Lu2.99Ce0.01Si0.5Ga4.49Cr0.01O11.5N0.5 80% 110 719
实施例21 450nm*1 Lu2.99Ce0.01Si0.5Ga4.44Cr0.06O11.5N0.5 80% 129 730
实施例22 450nm*1 Lu2.99Ce0.01Si0.5Ga4.42Cr0.08O11.5N0.5 80% 127 731
实施例22 450nm*1 Lu2.99Ce0.01Si0.5Ga4.47Cr0.03O11.5N0.5 80% 120 724
实施例23 450nm*2 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 80% 150 729
实施例24 450nm*3 Lu2.99Ce0.01Si0.5Ga4.45Cr0.05O11.5N0.5 80% 165 729
对比例1 730 nm*1 LED红外芯片 - 100  
对比例2 450nm*1 Lu2.99Ce0.01Ga4.95Cr0.05O12 80% 100 715
对比例3 450nm*1 Lu3Ga4.95Cr0.05O12 80% 90 713
表1
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (10)

  1. 一种植物照明用的发光装置，包括基板和无缝连接所述基板的透镜，所述基板上设置有凹槽，其特征在于，所述基板和所述透镜形成的空间内设置有位于凹槽内且依次层叠设置的蓝光LED芯片、荧光粉胶层和蓝光吸收层，所述荧光粉胶层中含有远红光荧光粉；
    所述远红光荧光粉的化学通式为：A 3-xM yGa 5-y-zO 12-yN y:（zCr 3+,xCe 3+）；其中，A选自Lu和Y中的至少一种，且A必含Lu，M选自Si、Zr和Hf中的至少一种；0.001≤x≤0.05，0.01≤z≤0.08，0.01≤y≤0.8。
  2. 如权利要求1所述的发光装置，其特征在于，所述远红光荧光粉的化学通式中，A为Lu，M为Si。
  3. 如权利要求2所述的发光装置，其特征在于，所述远红光荧光粉的化学通式中，0.005≤x≤0.03，0.05≤z≤0.08，0.5≤y≤0.7。
  4. 如权利要求1所述的发光装置，其特征在于，所述远红光荧光粉的峰值波长为710-730nm；和/或，
    所述蓝光LED芯片的波长为440-470nm。
  5. 如权利要求1所述的发光装置，其特征在于，所述蓝光LED芯片的数量为2个或2个以上；和/或，
    所述蓝光LED芯片为倒装芯片。
  6. 如权利要求1-5任一项所述的发光装置，其特征在于，所述荧光粉胶层由所述远红光荧光粉和第一封装胶组成，且以所述荧光粉胶层的总重量为100%计，所述远红光荧光粉的重量百分比为30%-90%，所述第一封装胶的重量百分比为10%-70%。
  7. 如权利要求1-5任一项所述的发光装置，其特征在于，所述蓝光吸收层由色素和第二封装胶组成，且所述色素为所述荧光粉胶层重量的0.2%-5%。
  8. 如权利要求7所述的发光装置，其特征在于，所述色素对波长在420-470nm区间的光吸收率为97%以上；和/或，
    所述色素的化学式为：C 20H 6Br 2N 2Na 2O 9。
  9. 如权利要求1-5任一项所述的发光装置，其特征在于，所述透镜为玻璃透镜或硅胶透镜；和/或，
    所述透镜为半球形透镜或方形透镜。
  10. 如权利要求1-5任一项所述的发光装置，其特征在于，所述透镜的内表面设置有使波长在500nm-620nm区间的光透过率低于3%的反射层。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11177269B2 (en) 2019-02-15 2021-11-16 Micron Technology, Inc. Memory arrays and methods used in forming a memory array

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111116207A (zh) * 2019-12-19 2020-05-08 徐州凹凸光电科技有限公司 一种具有长波段发射、高显指的氧氮化物荧光陶瓷材料及其制备方法
CN112151661A (zh) * 2020-10-22 2020-12-29 弘凯光电(深圳)有限公司 Led发光装置及其封装方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010053341A1 (en) * 2008-11-07 2010-05-14 Uab "Hortiled" Phosphor conversion light-emitting diode for meeting photomorphogenetic needs of plants
JP2011155948A (ja) * 2010-02-03 2011-08-18 Seiwa Electric Mfg Co Ltd 植物育成用発光装置
CN104853587A (zh) * 2013-02-15 2015-08-19 夏普株式会社 植物栽培用led光源
CN107808919A (zh) * 2017-09-25 2018-03-16 西安石油大学 一种led白光光源装置
CN108231979A (zh) * 2017-01-24 2018-06-29 江苏博睿光电有限公司 一种红外led光源

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1795574B1 (en) * 2004-08-11 2012-10-10 National Institute for Materials Science Phosphor, method for producing same and light-emitting device
CN101696353A (zh) * 2007-08-15 2010-04-21 大连路明发光科技股份有限公司 含氮化合物荧光材料及其制造方法和使用其的发光装置
JP5578597B2 (ja) * 2007-09-03 2014-08-27 独立行政法人物質・材料研究機構 蛍光体及びその製造方法、並びにそれを用いた発光装置
CN203589073U (zh) * 2013-09-30 2014-05-07 潘兴华 一种防蓝光led光源
CN105932119A (zh) * 2016-06-19 2016-09-07 苏州霞光电子科技有限公司 无蓝光led发光二极管睡眠灯珠及过滤单元圆片级工艺
CN109037404B (zh) * 2018-08-01 2019-06-18 广东旭宇光电有限公司 植物萌芽照射二极管及其制备方法和植物萌芽照射灯

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010053341A1 (en) * 2008-11-07 2010-05-14 Uab "Hortiled" Phosphor conversion light-emitting diode for meeting photomorphogenetic needs of plants
JP2011155948A (ja) * 2010-02-03 2011-08-18 Seiwa Electric Mfg Co Ltd 植物育成用発光装置
CN104853587A (zh) * 2013-02-15 2015-08-19 夏普株式会社 植物栽培用led光源
CN108231979A (zh) * 2017-01-24 2018-06-29 江苏博睿光电有限公司 一种红外led光源
CN107808919A (zh) * 2017-09-25 2018-03-16 西安石油大学 一种led白光光源装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11177269B2 (en) 2019-02-15 2021-11-16 Micron Technology, Inc. Memory arrays and methods used in forming a memory array

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