WO2020107425A1 - 一种荧光体混合物及其发光装置 - Google Patents

一种荧光体混合物及其发光装置 Download PDF

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WO2020107425A1
WO2020107425A1 PCT/CN2018/118646 CN2018118646W WO2020107425A1 WO 2020107425 A1 WO2020107425 A1 WO 2020107425A1 CN 2018118646 W CN2018118646 W CN 2018118646W WO 2020107425 A1 WO2020107425 A1 WO 2020107425A1
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phosphor
light
emitting device
composition
peak wavelength
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PCT/CN2018/118646
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English (en)
French (fr)
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何锦华
符义兵
梁超
徐俊峰
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江苏博睿光电有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials

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  • the invention relates to a phosphor mixture converted by an LED light source, and in particular to a phosphor mixture and a light emitting device that convert a violet LED into a white light source for lighting applications.
  • the LED white light emitting device is formed by combining a blue LED and a yellow phosphor.
  • the phosphor absorbs part of the radiation of the LED and converts it into yellow to mix it to emit white light.
  • the blue-green and red parts of the spectral radiation intensity cannot be obtained sufficiently, resulting in the color reduction of the illuminated object. Poor, that is, the color rendering index is low.
  • Nichia Chemical Industry Co., Ltd. applied for a patent for a light-emitting device with patent number 201710382217.7.
  • the application scheme is an LED violet chip (410-440nm) as an excitation light source, which excites a mixture of five types of phosphors to emit white light.
  • the present invention provides a phosphor mixture that can be excited by a violet chip to emit white light.
  • the specific solution is as follows:
  • a phosphor mixture characterized in that the phosphor mixture includes:
  • a first phosphor wherein the composition of the first phosphor has an alkaline earth halophosphate activated with Eu, and the peak wavelength range of the first phosphor is 430-500 nm;
  • a second phosphor the composition of the second phosphor has a rare earth aluminate activated by Ce, and the peak wavelength range of the second phosphor is 500-600 nm;
  • a third phosphor wherein the composition of the third phosphor has calcium (strontium) aluminum silicon nitrogen activated with Eu, and the peak wavelength range of the third phosphor is 600-680 nm;
  • a fourth phosphor which is effectively excited by the light emitted by the first phosphor or the second phosphor, and the fourth phosphor emits light in a wavelength range of 680-1200 nm.
  • the first phosphor has the following composition: (Ca, Sr, Ba) 5 (PO 4 ) 3 (Cl, Br): Eu 2+ .
  • the first phosphor has the following composition: (Sr,Ba) 5 (PO 4 ) 3 Cl:Eu 2+ .
  • the second phosphor has the following composition: (Y, Lu) 3 (Al, Ga) 5 O 12 : Ce 3+ .
  • the third phosphor composition has calcium (strontium) aluminum silicon nitrogen activated with Eu, and its chemical formula is (Ca, Sr) AlSiN 3 :Eu 2+ .
  • composition of the fourth phosphor includes a rare earth type germanium (silicate) activated with Cr.
  • the fourth phosphor has the following composition: La 3 Ga 5 (Ge, Si)O 14 : Cr 3+ .
  • the mass ratio of the first phosphor, the second phosphor, the third phosphor, and the fourth phosphor satisfies: (20%-70%): (10%-65%) : (1.5%-20%): (10%-40%).
  • the mass ratio of the first phosphor, the second phosphor, the third phosphor, and the fourth phosphor satisfies: (35%-65%): (10%-25%) : (2%-6%): (18%-30%).
  • the present invention also provides a light-emitting device including the phosphor mixture proposed by the present invention.
  • the light-emitting device includes an LED violet chip or an ultraviolet chip as an excitation light source.
  • the excitation light source has a peak emission wavelength in the range of 300-430 nm.
  • the excitation light source has a peak emission wavelength in the range of 400-430 nm.
  • the spectrum of the light emitting device covers the visible light region of 400-780 nm and the near infrared light region after 780 nm.
  • the light-emitting device has a general color rendering index Ra greater than 90.
  • the light emitting device has an average color rendering index R1-R15 greater than 90.
  • the light emitting device has a correlated color temperature of 2500K to 8000K.
  • the beneficial effects of the present invention are: a novel white light phosphor mixture is provided, which is excited by a violet chip, so that the white light device prepared by applying the phosphor mixture of the present invention has a full spectrum of natural light, which can better realize protection of.
  • FIG. 1 is a schematic cross-sectional view of a light-emitting device in an embodiment of the present invention
  • Example 2 is a 6500K spectrum test chart of the light-emitting device in Example 1 of the present invention.
  • Example 3 is a 5000K spectrum test chart of the light-emitting device in Example 5 of the present invention.
  • Example 8 is a 4000K spectrum test chart of the light-emitting device in Example 8 of the present invention.
  • Example 11 is a 2700K spectrum test chart of the light-emitting device in Example 11 of the present invention.
  • FIG. 6 is a 6500K spectrum test chart of the light-emitting device in Example 1 of the present invention and a spectrum test chart of Comparative Example 1.
  • FIG. 6 is a 6500K spectrum test chart of the light-emitting device in Example 1 of the present invention and a spectrum test chart of Comparative Example 1.
  • FIG. 1 is a schematic cross-sectional view of a light-emitting device according to an embodiment disclosed in the present invention.
  • the structure of a common light-emitting device is taken as an example.
  • the light-emitting device 100 includes a substrate 10 and a side wall 20 surrounding the substrate.
  • the substrate 10 and the side wall 20 enclose a cavity 40 for accommodating the light-emitting chip 30.
  • the light emitting chip 30 is provided on the substrate 10 and covers the phosphor mixture 50 over the light emitting chip 30.
  • the second phosphor has a peak emission wavelength range of 500-600 nm and is a yellow-green phosphor.
  • the composition of the second phosphor includes, for example, Ce-activated rare earth aluminate.
  • the third phosphor is a red phosphor with an emission peak wavelength of 600-680 nm.
  • the third phosphor is, for example, calcium (strontium) aluminum silicon nitrogen activated with Eu in the composition.
  • the fourth phosphor for example, has a rare-earth meta-germanium (silicate) activated with Cr in its composition, and is a near-infrared phosphor having a light emission wavelength range of 680-1200 nm.
  • the number of color rendering evaluations can be calculated.
  • the light emission spectrum of the light-emitting device 100 is close to the spectrum of the reference light source.
  • excellent color rendering can be achieved.
  • the light emitting element 30 having a light emission peak in a specific wavelength band it is possible to achieve safety as a light source and high light emission efficiency.
  • the specific excitation chip 30 and the corresponding phosphor mixture 50 can effectively improve the color rendering index Ra of the light emitting device.
  • the color rendering index Ra of sunlight is defined as 100, and the color rendering index of incandescent lamps is very close to sunlight, so it is regarded as an ideal reference light source.
  • Test with 8 standard color samples with medium chroma compare the degree of deviation of the 8 colors under the test light source and under the same color temperature, to measure the color rendering index of the light source, and take the average deviation value Ra20- 100, with 100 as the highest, the larger the average color difference, the lower the Ra value.
  • Light sources below 20 are generally not suitable for general use.
  • the light emitted by the light emitting device 100 is a mixed color light of the light of the light emitting element 30 and the fluorescence of the phosphor mixture 50.
  • the correlated color temperature of the light emitted by the light emitting device 100 is, for example, 2000K or more or 2500K or more.
  • the correlated color temperature is 8000K or less or 7500K or less.
  • the peak emission wavelength of the light-emitting chip 30 is in the range of 400 nm or more and 430 nm or less. From the viewpoint of luminous efficiency, it is preferably in the range of 405-420 nm.
  • the emission wavelength of the chip is shorter than 400nm. Due to the influence of the chip preparation technology, the luminous efficiency is affected.
  • the wavelength of the chip is greater than 430nm. Due to the deviation from the optimal excitation position of the first phosphor, the effect of the light emitted by the chip to excite the first phosphor is not good.
  • the light-emitting chip 30 having a light-emission peak wavelength in this range As the excitation light source, the light-emission peak wavelength is closer to the long-wavelength side than the near-ultraviolet region, and there are fewer components of ultraviolet rays, so the safety as a light source and the luminous efficiency are excellent.
  • the half-value width of the emission spectrum of the light-emitting chip 30 can be set to 30 nm or less, for example.
  • a semiconductor light-emitting element such as an LED is preferably used.
  • a semiconductor light-emitting element as a light source, a light-emitting device 100 with high efficiency, high output linearity with respect to input, and resistance to mechanical shock and stability can be obtained.
  • a semiconductor light-emitting chip for example, a nitride-based semiconductor (In X Al Y Ga 1-XY N, where X and Y satisfy 0 ⁇ X, 0 ⁇ Y, X+Y ⁇ 1) emit blue, green, In the semiconductor light-emitting element of light such as violet, a violet chip is selected in the present invention.
  • the phosphor mixture 50 includes, for example, a first phosphor 51, a second phosphor 52, a third phosphor 53, a fourth phosphor 54, and a resin arrangement.
  • the first phosphor 51 absorbs the light emitted by the light-emitting chip 30 and emits blue light
  • the second phosphor 52 emits yellow-green light
  • the third phosphor 53 emits red light
  • the fourth phosphor 54 emits deep red And near infrared light.
  • the first phosphor 51 has an emission peak wavelength in the range of 430 nm or more and 500 nm or less, and contains an alkaline earth phosphate having a halogen element in the composition and activated with Eu.
  • the first phosphor 51 has a composition of the following formula (1), for example:
  • each light-emitting characteristic of the first phosphor 51 described below can be obtained relatively easily.
  • the effective excitation wavelength of the first phosphor 51 is, for example, 360 nm or more and 440 nm or less, preferably 370 nm or more and 430 nm or less.
  • the light-emitting chip 30 can be efficiently excited within the range of the emission peak wavelength.
  • the emission peak wavelength of the first phosphor 51 is, for example, in the range of 430 nm or more and 500 nm or less, preferably in the range of 440 nm or more and 480 nm or less.
  • the light emission spectrum of the first phosphor 51 and the light emission spectrum of the light emitting chip 30 are used to make the light emission intensity from the blue region of the light emitting chip 30 close to the reference light source, effectively improving the light emission Color rendering of device 100.
  • the half-value width in the emission spectrum of the first phosphor 51 is, for example, 29 nm or more and 49 nm or less, preferably 30 nm or more and 44 nm or less. By setting to such a half-value width range, the color purity can be improved, the emission spectrum in the blue region can be made close to the reference light source, and the color rendering of the light-emitting device 100 can be further improved.
  • the second phosphor 52 has a luminescence peak wavelength in the range of 500 nm or more and 600 nm or less, contains the rare earth aluminate activated by Ce in the composition, or a combination of both.
  • the second phosphor 52 has, for example, the following formula (3):
  • the optimal excitation wavelength of the second phosphor 52 is, for example, 400 nm or more and 480 nm or less, and preferably 420 nm or more and 470 nm or less.
  • the violet light emitted by the light emitting chip 30 can be used to excite the second phosphor, but since the violet light emitted by the light emitting chip 30 is not at the optimal excitation position of the second phosphor 52, the excitation effect is limited, but at this time the first phosphor 51 emits
  • the blue light can effectively excite the second phosphor 52, and through the effective combination of the first phosphor 51 and the second phosphor 52, excellent blue (green) light and green (yellow) light emission effects can be obtained.
  • the emission peak wavelength of the second phosphor 52 is, for example, in the range of 500 nm or more and 580 nm or less, preferably in the range of 520 nm or more and 560 nm or less. With this arrangement, for the emission spectrum of the light-emitting device 100, particularly for the yellow-green region, the emission spectrum of the second phosphor 52, the emission spectrum of the light-emitting chip 30, and the emission spectrum of the first phosphor 51 become less repeated.
  • the light emission spectrum of the second phosphor 52 and the light emission spectrum of the light emitting chip 30 are used to make the light emission intensity of the yellow-green region from the light emitting chip 30 close to the reference light source, effectively improving the light emission Color rendering of device 100.
  • the half-value width in the emission spectrum of the second phosphor 52 is, for example, 80 nm or more and 115 nm or less, preferably 90 nm or more and 110 nm or less.
  • the third phosphor 53 has a red phosphor with an emission peak wavelength in the range of 600 nm or more and 680 nm or less, such as calcium (strontium) aluminum silicon nitrogen activated with Eu in the composition, It has the following formula (6):
  • the effective excitation wavelength of the third phosphor 53 is, for example, 400 nm or more and 500 nm or less, preferably 400 nm or more and 470 nm or less.
  • the emission spectrum of the light-emitting device 100 particularly in the red region, the emission spectrum of the third phosphor 53 and the emission spectrum of the light-emitting chip 30 and the emission spectrum of the fourth phosphor 54 become less repeated.
  • the light emission spectrum of the third phosphor 53 and the light emission spectrum of the light emitting chip 30 are used to make the light emission intensity of the red region close to the reference light source, effectively improving the color rendering of the light emitting device 100.
  • the fourth phosphor 54 is also included in the present invention.
  • the fourth phosphor is a deep red and near-infrared phosphor with an emission wavelength in the range of 680-1200 nm.
  • it is a rare-earth germanium silicate activated with Cr.
  • the emission wavelength of the fourth phosphor 54 effectively supplements the deep red and near-infrared spectral components after 700 nm contained in the white light device, and realizes a full-spectrum LED similar to natural light.
  • the effective excitation wavelength of the fourth phosphor 54 is, for example, 400 nm or more and 550 nm or less, preferably 420 nm or more and 550 nm or less.
  • the violet light emitted by the light-emitting chip 30 can be used to excite the fourth phosphor, but since the violet light emitted by the light-emitting chip 30 is not at the optimal excitation position of the fourth phosphor 54, the excitation effect is limited, but the first phosphor 51
  • the emitted blue light or the yellow-green light emitted by the second phosphor can effectively excite the fourth phosphor 54, and by combining the first, second, and fourth phosphors, excellent emission effects of blue light, yellow-green light, and deep red light can be obtained.
  • the mass ratio of the first phosphor, the second phosphor, the third phosphor, and the fourth phosphor satisfies: (20%-70%): (10%-65%): (1.5%- 20%): (10%-40%).
  • the mass ratio of the first phosphor, the second phosphor, the third phosphor, and the fourth phosphor satisfies: (35%-65%): (10%-25%) : (2%-6%): (18%-30%).
  • the first phosphor 51, the second phosphor 52, the third phosphor 53, and the fourth phosphor 54 are mixed according to a certain mass ratio, and mixed with glue to prepare a phosphor mixture 50, wherein the glue may be Thermoplastic resin and thermosetting resin, wherein the thermosetting resin includes, for example, epoxy resin, silicone resin, epoxy modified silicone resin and the like.
  • the phosphor mixture 50 may also include other components, such as fillers such as silica, barium titanate, titanium oxide, and alumina, light stabilizers, colorants, and the like.
  • the content of other components accounts for 0.01-20 parts by mass of the resin, for example.
  • the LED chip selects a violet LED chip with an emission peak wavelength of 405nm-420nm.
  • the phosphor combination includes:
  • Blue phosphor selection (Ca, Sr, Ba) 5 (PO 4 ) 3 (Cl, Br, F): Eu 2+ ;
  • Yellow-green phosphor selection (Y, Lu) 3 (Al, Ga) 5 O 12 : Ce 3+ ;
  • Red phosphor chooses CaAlSiN 3 :Eu 2+
  • the ratio of phosphor to encapsulation glue is 1: 0.8-1.5
  • the encapsulation bracket includes: patch, COB, straight plug (flat head, concave, etc.), high power, etc., but not limited to these types.
  • the LED chip selects a violet LED chip with an emission peak wavelength of 410 nm
  • the encapsulation glue selects a silicone resin
  • the phosphor combination includes: blue phosphors select (Sr,Ba) 5 (PO 4 ) 3 Cl:Eu 2+ with an emission peak wavelength of 450 nm
  • the yellow-green phosphor chooses Y 3 (Al,Ga) 5 O 12 :Ce 3+ with a peak wavelength of 530 nm
  • the near infrared phosphor chooses La 3 Ga 5 (Ge,Si)O 14 :Cr 3+ with a peak wavelength of 765 nm
  • Red phosphors select CaAlSiN 3 :Eu 2+ with an emission peak wavelength of 650 nm.
  • the mass ratio of blue phosphor, yellow-green phosphor, near infrared phosphor and red phosphor is 58.2:13.5:25.2:3.1.
  • the mass ratio of phosphor and encapsulating glue is 1:0.8. Choose the patch type for the package bracket.
  • the LED chip selects a purple LED chip with an emission peak wavelength of 415 nm
  • the encapsulation glue selects a silicone resin
  • the phosphor combination includes: blue phosphors select (Sr,Ba) 5 (PO 4 ) 3 Cl:Eu 2+ with an emission peak wavelength of 450 nm;
  • the yellow-green phosphor chooses Lu 3 Al 5 O 12 with an emission peak wavelength of 535 nm:Ce 3+ ;
  • the near-infrared phosphor chooses La 3 Ga 5 (Ge,Si)O 14 :Cr 3+ with an emission peak wavelength of 763 nm;
  • the mass ratio of blue phosphor, yellow-green phosphor, near infrared phosphor and red phosphor is 55:16.8:25.8:2.6.
  • the mass ratio of phosphor and encapsulating glue is 1:0.9. Choose the patch type for the package bracket.
  • the LED chip selects a violet LED chip with an emission peak wavelength of 420 nm
  • the encapsulating glue selects a silicone resin
  • the phosphor combination includes: blue phosphors select (Sr,Ba) 5 (PO 4 ) 3 Cl:Eu 2+ with an emission peak wavelength of 450 nm; Yellow-green phosphors select Y 3 (Al,Ga) 5 O 12 :Ce 3+ with an emission peak wavelength of 532 nm; near infrared phosphors select La 3 Ga 5 (Ge,Si)O 14 :Cr 3+ with an emission peak wavelength of 765 nm ; Red phosphors select CaAlSiN 3 :Eu 2+ with an emission peak wavelength of 660 nm.
  • the mass ratio of blue phosphor, yellow-green phosphor, near infrared phosphor and red phosphor is 60:12.7:24.4:2.9.
  • the mass ratio of phosphor and encapsulating glue is 1:1. Choose the patch type for the package bracket.
  • the LED chip selects a violet LED chip with an emission peak wavelength of 420 nm
  • the encapsulation glue selects a silicone resin
  • the phosphor combination includes: blue phosphors select (Sr,Ba) 5 (PO 4 ) 3 Cl:Eu 2+ with an emission peak wavelength of 450 nm
  • the yellow-green phosphor chooses Y 3 (Al,Ga) 5 O 12 :Ce 3+ with an emission peak wavelength of 535 nm; the red phosphor chooses CaAlSiN 3 :Eu 3+ with an emission peak wavelength of 650 nm.
  • the mass ratio is 74:22.6:3.4.
  • the mass ratio of phosphor and encapsulating glue is 1: 0.95. Choose the patch type for the package bracket.
  • Examples 4-6 and Comparative Example 2 are designed corresponding to Examples 1-3 and Comparative Example 1. For specific formulations, see Table 2. The test results for Examples 4-6 and Comparative Example 2 of the present invention are shown in Table 3.
  • the examples 7-9 and the comparative example 3 are designed corresponding to the examples 4-6 and the comparative example 2, the specific formulas are shown in Table 4.
  • the test results for Examples 7-9 and Comparative Example 3 of the present invention are shown in Table 5.
  • the examples 10-12 and the comparative example 4 are designed corresponding to the examples 7-9 and the comparative example 3, and the specific formula is shown in Table 6.
  • the test results for Examples 10-12 and Comparative Example 3 of the present invention are shown in Table 7.
  • the present invention enables the phosphor mixture to obtain a natural light spectrum containing more than 700 nm by adding deep red and near infrared phosphors to the phosphor. Since the wavelength band above 700 nm has good protection for the human eye, the fluorescent of the present invention Fan will have good market prospects.
  • the ratio of phosphors used in the examples of the present invention can be used as a reference, not absolute Scale value.

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Abstract

一种全光谱荧光体混合物及利用该荧光体混合物制造的发光装置，该荧光体混合物由蓝色荧光粉、绿色或黄绿色荧光粉、红色荧光粉、深红色或者近红外荧光粉组成，通过选用紫光LED芯片激发，形成了类自然光光谱。

Description

一种荧光体混合物及其发光装置 【技术领域】
本发明涉及LED光源转化的荧光体混合物，特别地涉及一种将紫光LED转化成照明应用的白光光源的荧光体混合物及其发光装置。
【背景技术】
目前LED白光发光装置，是将蓝色LED激发黄色荧光体组合而成。该荧光体吸收一部分LED的辐射光转化为黄色进行混色能发出白色系的光，但是白色颜色的光谱中，无法充分得到蓝绿色和红色部分的光谱辐射强度，从而导致被照物体的颜色还原度差，即显色指数较低。
日亚化学工业株式会社申请了专利号为201710382217.7的发光装置专利，应用的方案为LED紫光芯片(410-440nm)作为激发光源，激发五类荧光体的混合物发出白光系的光。
其五种荧光体覆盖分别为峰波长为430-500nm，化学式(Ca,Sr,Ba) 5(PO 4) 3(CL,Br):Eu 2+的荧光粉；峰波长为440-550nm，化学式(Ca,Sr,Ba) 4Al 14O 25:Eu 2+和化学式(Ca,Sr,Ba) 8MgSi 4O 16(F,Cl,Br) 2:Eu 2+的荧光粉；峰波长为500-600nm，化学式(Y,Lu,Gd) 3(Al,Ga) 5O 12：Ce 3+；峰波长为610-650nm，化学式为(Sr,Ca)AlSiN 3:Eu 2+的荧光粉；峰波长为610-650nm，化学式为3.5Mg00.5MgF 2GeO 2：Mn 4+的荧光粉。此方案特点是在400-780nm波段可以达到连续光谱，且显色指数Ra能大于95，特殊显色指数R1到R15能大于90，能达到覆盖较多连续光谱的效果。
但是该方案存在以下不足：
采用了(Ca,Sr,Ba) 4Al 14O 25:Eu 2+/(Ca,Sr,Ba) 8MgSi 4O 16(F,Cl,Br) 2:Eu 2+绿色荧光粉作为绿光发射的发光材料，但是该两种绿光发射荧光材料由于晶体结构方面的原因化学稳定性较差，会导致发光装置存在较大长期光衰，同时荧光粉的之间的配合效率比较低且光谱覆盖仍然有限。
因此，有必要提供一种新的类自然光发射的荧光粉及LED发光器件。
【发明内容】
为了解决上述问题，本发明提供了一种能够利用紫光芯片激发而发出白光的荧光体混合物，其具体方案如下：
一种荧光体混合物，其特征在于，所述荧光体混合物包括：
第一荧光体，所述第一荧光体组成中具有以Eu激活的碱土类卤磷酸盐，所述第一荧光体的发光峰值波长范围为430-500nm；
第二荧光体，所述第二荧光体组成中具有以Ce激活的稀土类铝酸盐，所述第二荧光体的发光峰值波长范围为500-600nm；
第三荧光体，所述第三荧光体组成中具有以Eu激活的钙(锶)铝硅氮，所述第三荧光体的发光峰值波长范围为600-680nm；
第四荧光体，所述第四荧光体被第一荧光体或第二荧光体发射的光有效激发,所述第四荧光体发光波长范围为680-1200nm。
进一步地,其中所述第一荧光体具有如下组成：(Ca,Sr,Ba) 5(PO 4) 3(Cl,Br):Eu 2+。
进一步地,其中所述第一荧光体具有如下组成：(Sr,Ba) 5(PO 4) 3Cl:Eu 2+。
进一步地,所述第二荧光体具有如下组成：(Y,Lu) 3(Al,Ga) 5O 12：Ce 3+。第三荧光体组成中具有以Eu激活的钙(锶)铝硅氮，其化学式为(Ca,Sr)AlSiN 3:Eu 2+。
进一步地，所述第四荧光体组成中具有以Cr激活的稀土类稼锗(硅)酸盐。
进一步地，所述第四荧光体具有如下组成：La 3Ga 5(Ge,Si)O 14：Cr 3+。
进一步地，所述第一荧光体、所述第二荧光体、所述第三荧光体、所述第四荧光体的质量比满足：(20％-70％)：(10％-65％)：(1.5％-20％)：(10％-40％)。
进一步地，所述第一荧光体、所述第二荧光体、所述第三荧光体、所述第四荧光体的质量比满足：(35％-65％)：(10％-25％)：(2％-6％)：(18％-30％)。
进一步地，还包含胶水。
本发明还提出一种发光装置，包括本发明所提出的荧光体混合物。
进一步地,所述发光装置包括采用LED紫光芯片或紫外光芯片作为激发光源。
进一步地,所述激发光源具备在300-430nm范围内的发光峰值波长。
进一步地,所述激发光源具备在400-430nm范围内的发光峰值波长。
进一步地,所述发光装置的光谱覆盖400-780nm可见光区域以及780nm以后的近红外光区域。
进一步地,所述发光装置具有大于90的一般显色指数Ra。
进一步地,所述发光装置具有大于90的平均显色指数R1-R15。
进一步地,所述发光装置具有2500K至8000K的相关色温。
本发明的有益效果是：提供了一种新颖的白光荧光体混合物，通过紫光芯片激发，使得应用本发明的荧光体混合物所制备的白光器件具有类自然光的全光谱，更好地实现对人眼的保护。
【附图说明】
图1为本发明实施例中发光装置的剖面示意图；
图2为本发明实施例1中发光装置的6500K光谱测试图；
图3为本发明实施例5中发光装置的5000K光谱测试图；
图4为本发明实施例8中发光装置的4000K光谱测试图；
图5为本发明实施例11中发光装置的2700K光谱测试图；
图6为本发明实施例1中发光装置的6500K光谱测试图与比较例1的光谱测试图。
【具体实施方式】
下面通过具体实施方式结合附图1至附图5对本发明作进一步详细说明，以便能够更好地理解本发明的方案以及其各方面的优点。在以下的实施例中，提供以下具体实施方式的目的是便于对本申请公开内容更清楚透彻的理解，而不是对本发明的限制。其中上、下、左、右等指示方位的字词仅是针对所示结构在对应附图中位置而言。
图1是本发明公开的1个实施方式所涉及的发光装置的简要截面图。本实施例中以常见发光装置的结构为例加以说明，例如发光装置100具备：基板10、环绕基板的侧壁20，基板10和侧壁20围成容纳发光芯片30的腔体40。发光芯片30设置在基板10上，覆盖在该发光芯片30之上的荧光体混合物50。
具体地，本实施例中的发光芯片30例如采用在300nm以上且430nm以下的范围具有发光峰值波长的紫光或者紫外激发芯片。荧光体混合物50，该荧光体混合物50至少包含第一荧光体51、第二荧光体52、第三荧光体53、第四荧光体54，其中，第一荧光体51在430nm以上且500nm以下的范围具有发光峰值波长的蓝色荧光粉，第一荧光体组成中具有卤族元素且以Eu激活的碱土类磷酸盐。第二荧光体的发光峰值波长范围为500-600nm，为黄绿色荧光粉，第二荧光体组成中例如具有以Ce激活的稀土类铝酸盐。第三荧光体为具有600-680nm发射峰值波长的红色荧光粉，第三荧光体例如为组成中具有以Eu激活的钙(锶)铝硅氮。第四荧光体，例如组成中具有以Cr激活的稀土类稼锗(硅)酸盐，为具有发光波长范围为680-1200nm的近红外荧光粉。
通过具备具有特定的发光峰值波长的发光元件30、和至少包含4种特定的荧光体且以特定的范围的含量配比组合而成的荧光体混合物50，从而能在显色评价数的计算所涉及的可见光区域的短波侧到长波侧的极广的范围内使发光装置100的发光光谱接近于基准光源的光谱。由此，能达成卓越的显色性。另外，通过包含在特定的波段具有发光峰值的发光元件30，能实现作为光源的安全性和高的发光效率。
进而，本实施例通过特定的激发芯片30和相应的荧光体混合物50，能有效提升发光装置的显色指数Ra。
太阳光的显色指数Ra定义为100，白炽灯的显色指数非常接近日光，因此被视为理想的基准光源。以8种彩度中等的标准色样来检验，比较在测试光源下与在同色温的基准下此8色的偏离(Deviation)程度，以测量该光源的显色指数，取平均偏差值Ra20-100，以100为最高，平均色差越大，Ra值越低。低于20的光源通常不适于一般用途。
发光装置100所发出的光是发光元件30的光和荧光体混合物50所发出的荧光的混色光，例如能设为CIE1931所规定的色度坐标包含在x＝0.00到0.65且y＝0.00到0.65的范围的光，还能设为CIE1931所规定的色度坐标包含在x＝0.25到0.40且y＝0.25到0.40的范围的光。另外，发光装置100所发出的光的相关色温例如为2000K以上或2500K以上。另外，相关色温为8000K以下或7500K以下。
在本实施例中，发光芯片30的发光峰值波长处于400nm以上且430nm以下的范围，从发光效率的角度而言，优选处于：405-420nm。芯片发射波长短于400nm，由于芯片制备技术的影响，发光效率受到影响，芯片波长大于430nm，由于偏离了第一荧光粉的最佳激发位置，芯片发射的光激发第一荧光粉效果欠佳。
通过将在该范围具有发光峰值波长的发光芯片30用作激发光源，发光峰值波长比近紫外区域更靠长波长侧，紫外线的成分较少，因此作为光源的安全性和发光效率优秀。
发光芯片30的发光光谱的半值宽度例如能设为30nm以下。
在发光芯片30中优选使用LED等半导体发光元件。通过将半导体发光元件用作光源，能得到效率高且输出相对于输入的线性高、还耐机械性冲击且稳定的发光装置100。
作为半导体发光芯片，例如采用氮化物系半导体(In XAl YGa 1-X-YN，在此，X以及Y满足0≤X、0≤Y、X+Y≤1)的发出蓝色、绿色、紫色等的光的半导体发光元件,在本发明中选择紫光芯片。
在本实施例中，荧光体混合物50例如包括第一荧光体51、第二荧光体52、第三荧光体53，第四荧光体54以及树脂配置混合而成。
其中，第一荧光体51吸收发光芯片30发出的光并发出蓝色的光，第二荧光体52发出黄绿色的光，第三荧光体53发出红色的光，第四荧光体54发出深红色和近红外的光。由此，通过调整第一荧光体51、第二荧光体52、第三荧光体53、第四荧光体54的比例，能够将发光装置100的发光效率、显色性调整到预期范围内。
具体地，本实施例中的，第一荧光体51具有在430nm以上且500nm以下的范围具 有发光峰值波长，包含在组成中具有卤族元素且以Eu激活的碱土类磷酸盐。第一荧光体51例如具有如下式(1)组成：
(Ca，Sr，Ba) 5(PO4) 3(Cl，Br)：Eu 2+           (1)
优选地，具有如下式(2)的组成：
(Sr，Ba) 5(PO 4) 3Cl:Eu 2+                  (2)
由此，能比较容易地获得以下说明的第一荧光体51的各发光特性。
第一荧光体51的有效激发波长例如为360nm以上且440nm以下，优选为370nm以上且430nm以下。能在上述发光芯片30的发光峰值波长的范围内效率良好地被激发。第一荧光体51的发光峰值波长例如处于430nm以上且500nm以下的范围，优选处于440nm以上且480nm以下的范围。通过如此设置，对于发光装置100的发光光谱，特别是针对蓝色区域，第一荧光体51的发光光谱与发光芯片30的发光光谱以及第二荧光体52的发光光谱的重复变少。进而，对于发光装置100的发光光谱来说，利用第一荧光体51的发光光谱和发光芯片30的发光光谱，使得源自发光芯片30的蓝色区域的发光强度接近于基准光源，有效提升发光装置100的显色性。
第一荧光体51的发光光谱中的半值宽度例如为29nm以上且49nm以下，优选为30nm以上且44nm以下。通过设为这样的半值宽度的范围，能提升色纯度，使蓝色区域中的发光光谱接近于基准光源，能更加提升发光装置100的显色性。
具体地，本实施例中的，第二荧光体52具有在500nm以上且600nm以下的范围具有发光峰值波长，包含在组成中具有包含以Ce激活的稀土类铝酸盐，或者二者之组合。第二荧光体52例如具有如下式(3)组成：
(Y,Lu) 3(Al,Ga) 5O 12：Ce 3+          (3)
优选地，具有如下式(4)或(5)的组成：
Y 3(Al,Ga) 5O 12：Ce 3+              (4)
Lu 3Al 5O 12：Ce 3+                  (5)
第二荧光体52的最佳激发波长例如为400nm以上且480nm以下，优选为420nm以上且470nm以下。发光芯片30发射的紫光可用于激发第二荧光体，但由于发光芯片30发射的紫光没有处于第二荧光体52的最佳激发位置，所以激发效果受到限制，但此时第一荧光体51发射的蓝光可有效激发第二荧光体52，通过第一荧光体51和第二荧光体52的有效组合，可获得优异的蓝(绿)光和绿(黄)光的发射效果。
第二荧光体52的发光峰值波长例如处于500nm以上且580nm以下的范围，优选处于520nm以上且560nm以下的范围。通过如此设置，对于发光装置100的发光光谱， 特别是针对黄绿色区域，第二荧光体52的发光光谱与发光芯片30的发光光谱以及第一荧光体51的发光光谱的重复变少。进而，对于发光装置100的发光光谱来说，利用第二荧光体52的发光光谱和发光芯片30的发光光谱，使得源自发光芯片30的黄绿色区域的发光强度接近于基准光源，有效提升发光装置100的显色性。
第二荧光体52的发光光谱中的半值宽度例如为80nm以上且115nm以下，优选为90nm以上且110nm以下。通过设为这样的半值宽度的范围，能提升显色性，使黄色区域中的发光光谱接近于基准光源，能更加提升发光装置100的显色性。
具体地，本实施例中的，第三荧光体53具有在600nm以上且680nm以下的范围具有发光峰值波长的红光荧光粉，例如为组成中具有以Eu激活的钙(锶)铝硅氮，具有如下式(6)组成：
(Ca 1-x，Sr x)AlSiN 3:Eu 2+，0≤x≤0.9，        (6)
第三荧光体53的有效激发波长例如为400nm以上且500nm以下，优选为400nm以上且470nm以下。对于发光装置100的发光光谱，特别是针对红色区域，第三荧光体53的发光光谱与发光芯片30的发光光谱以及第四荧光体54的发光光谱的重复变少。进而，对于发光装置100的发光光谱来说，利用第三荧光体53的发光光谱和发光芯片30的发光光谱，使得红色区域的发光强度接近于基准光源，有效提升发光装置100的显色性。
具体地，本发明中还包括第四荧光体54，第四荧光体为发光波长在680-1200nm范围内的深红色和近红外荧光粉。例如为具有以Cr激活的稀土类稼锗硅酸盐。
具有如下式(7)组成：
La 3Ga 5(Ge 1-x,Si x)O 14：Cr 3+，0≤x≤1         (7)
利用第四荧光体54的发光波长，有效补充了白光器件中含有700nm以后的深红色和近红外光谱成分，实现类自然光的全光谱LED。
第四荧光体54的有效激发波长例如为400nm以上且550nm以下，优选420nm以上且550nm以下。发光芯片30发射的紫光可用于激发第四荧光体，但由于发光芯片30发射的紫光没有处于第四荧光体54的最佳激发位置，所以激发效果会受到限制，但此时第一荧光体51发射的蓝光或第二荧光体发射的黄绿光可有效激发第四荧光体54，通过将第一、第二和第四荧光粉进行组合，可获得优异的蓝光、黄绿光、深红光的发射效果。
第一荧光体、所述第二荧光体、所述第三荧光体、所述第四荧光体的质量比满足：(20％-70％)：(10％-65％)：(1.5％-20％)：(10％-40％)。
进一步地，所述第一荧光体、所述第二荧光体、所述第三荧光体、所述第四荧光体的质量比满足：(35％-65％)：(10％-25％)：(2％-6％)：(18％-30％)。通过将各荧光粉的比例控制在此优化范围内，各荧光粉发出光组合后可实现类似自然光的白光效果。
在本发明中，第一荧光体51、第二荧光体52、第三荧光体53、第四荧光体54，按照一定的质量比例混合，配以胶水调制成荧光体混合物50，其中胶水可以是热塑性树脂以及热固化树脂，其中热固化树脂例如包括环氧树脂、硅树脂、环氧改性硅树脂等。
荧光体混合物50还可以包括其它成分，例如二氧化硅、钛酸钡、氧化钛、氧化铝等填料，光稳定剂、着色剂等。其它成分的含量比如占树脂的0.01-20质量份。
实施例及比较例
以下，为本发明的实施例，但本发明不限于这些实施例。
LED芯片选择发射峰波长405nm-420nm的紫光LED芯片。
封装胶水选择硅树脂或硅胶。
荧光粉组合包括：
蓝色荧光粉选择(Ca,Sr,Ba) 5(PO 4) 3(Cl,Br,F):Eu 2+；
黄绿色荧光粉选择(Y,Lu) 3(Al,Ga) 5O 12:Ce 3+；
近红外荧光粉选择La 3Ga 5(Ge,Si)O 14：Cr 3+
红色荧光粉选择CaAlSiN 3:Eu 2+
荧光粉和封装胶水的比例为1：0.8-1.5，封装支架包括：贴片，COB，直插(平头，内凹等)，大功率等，但不限于这些类型。
色温6500K：
实施例1
LED芯片选择发射峰波长410nm的紫光LED芯片，封装胶水选择硅树脂，荧光粉组合包括：蓝色荧光粉选择发射峰波长450nm的(Sr,Ba) 5(PO 4) 3Cl:Eu 2+；黄绿色荧光粉选择发射峰波长530nm的Y 3(Al,Ga) 5O 12:Ce 3+；近红外荧光粉选择发射峰波长765nm的La 3Ga 5(Ge,Si)O 14:Cr 3+；红色荧光粉选择发射峰波长650nm的CaAlSiN 3:Eu 2+。蓝色荧光粉、黄绿色荧光粉、近红外荧光粉和红色荧光粉之间质量比例为58.2:13.5:25.2:3.1。荧光粉和封装胶水的质量比例为1：0.8。封装支架选择贴片式。
实施例2
LED芯片选择发射峰波长415nm的紫光LED芯片，封装胶水选择硅树脂，荧光粉组合包括：蓝色荧光粉选择发射峰波长450nm的(Sr,Ba) 5(PO 4) 3Cl:Eu 2+；黄绿色荧光粉选择发射峰波长535nm的Lu 3Al 5O 12:Ce 3+；近红外荧光粉选择发射峰波长763nm的 La 3Ga 5(Ge,Si)O 14:Cr 3+；红色荧光粉选择发射峰波长655nm的CaAlSiN 3:Eu 2+。蓝色荧光粉、黄绿色荧光粉、近红外荧光粉和红色荧光粉之间质量比例为55:16.8:25.8:2.6。荧光粉和封装胶水的质量比例为1：0.9。封装支架选择贴片式。
实施例3
LED芯片选择发射峰波长420nm的紫光LED芯片，封装胶水选择硅树脂，荧光粉组合包括：蓝色荧光粉选择发射峰波长450nm的(Sr,Ba) 5(PO 4) 3Cl:Eu 2+；黄绿色荧光粉选择发射峰波长532nm的Y 3(Al,Ga) 5O 12:Ce 3+；近红外荧光粉选择发射峰波长765nm的La 3Ga 5(Ge,Si)O 14:Cr 3+；红色荧光粉选择发射峰波长660nm的CaAlSiN 3:Eu 2+。蓝色荧光粉、黄绿色荧光粉、近红外荧光粉和红色荧光粉之间质量比例为60:12.7:24.4:2.9。荧光粉和封装胶水的质量比例为1：1。封装支架选择贴片式。
比较例1
LED芯片选择发射峰波长420nm的紫光LED芯片，封装胶水选择硅树脂，荧光粉组合包括：蓝色荧光粉选择发射峰波长450nm的(Sr,Ba) 5(PO 4) 3Cl:Eu 2+；黄绿色荧光粉选择发射峰波长535nm的Y 3(Al,Ga) 5O 12:Ce 3+；红色荧光粉选择发射峰波长650nm的CaAlSiN 3:Eu 3+。质量比例为74:22.6:3.4。荧光粉和封装胶水的质量比例为1：0.95。封装支架选择贴片式。
针对本发明实施例1-3及对比例1的测试结果如表1所示。
表1：实施例1-3及对比例1测试结果
  实施例1 实施例2 实施例3 比较例1
Ra 98.8 98 98.2 96.1
R1 99.6 98.6 99 97.9
R2 98.9 97 97.4 96.2
R3 97.9 97.7 98.8 93.7
R4 97.3 972 96.1 95.2
R5 98.9 98 98.3 97.4
R6 99.4 96.8 97.2 95.9
R7 99.2 97.1 97.1 96.1
R8 99.2 97.3 98.2 96.3
R9 99.1 96.9 99 95
R10 98.2 94.6 97.4 90.6
R11 95.5 96 98.8 95.5
R12 96.5 98.7 98.3 93.9
R13 99.2 97.9 98.5 97.2
R14 98.7 97.8 98.8 96.2
R15 99.4 98.3 98.9 97.4
750-900nm光谱覆盖 有 有 有 没有
可见，使用本发明所提出的荧光粉的LED显色指数Ra较对比例1高，同时750-900nm近红外区域的光谱覆盖显著加强。(参见参见图2:实施例1的光谱,图6:实施例1和比较例1的光谱对比。)。
色温5000k:
与实施例1-3、对比例1相对应设计实施例4-6、对比例2，具体配方参见表2。针对本发明实施例4-6及对比例2的测试结果如表3所示。
表2：实施例4-6及对比例2质量配比表
Figure PCTCN2018118646-appb-000001
表3：实施例4-6及对比例2的测试结果
  实施例4 实施例5 实施例6 对比例2
Ra 98.3 98.1 98.1 95.8
R1 98.9 98.5 99.1 98.7
R2 99 99.2 98.6 97.5
R3 96.4 96.3 96 92.8
R4 97.1 96.7 96.9 94.6
R5 98.9 98.6 98.8 98
R6 99.4 99.5 98.9 97.1
R7 98.6 98.4 98.3 95.7
R8 98.3 97.6 98.1 96.1
R9 98 96.2 98.3 99.1
R10 97.3 97.7 96.5 92.9
R11 95.8 95.3 95.7 90.5
R12 96.7 97.2 96.5 93.3
R13 99.2 98.9 99.2 99.5
R14 97.6 97.5 97.4 95.3
R15 99.5 98.9 99.7 98.4
750-900nm光谱覆盖 有 有 有 没有
可见，使用本发明所提出的荧光粉的LED显色指数Ra较对比例2高，同时750-900nm近红外区域的光谱覆盖显著加强。(参见图3实施例5的光谱)。
色温4000K：
与实施例4-6、对比例2相对应设计实施例7-9、对比例3，具体配方参见表4。针对本发明实施例7-9及对比例3的测试结果如表5所示。
表4：实施例7-9及对比例3质量配比表
Figure PCTCN2018118646-appb-000002
表5：实施例7-9及对比例3的测试结果
  实施例7 实施例8 实施例9 比较例3
Ra 97.6 97.7 97.3 95.9
R1 99.4 99.5 98.7 98.9
R2 98.1 98 97.5 97
R3 93.3 93.4 93.8 92.8
R4 96.6 97 94.6 95.2
R5 98.9 99 98 98.4
R6 98.1 98 97.1 96.8
R7 98.2 98.4 95.7 96.7
R8 98 98.3 96.1 94.5
R9 92.2 92.9 99.1 96.7
R10 93.4 93.3 92.9 93.3
R11 95.5 95.9 94.6 91
R12 93.8 93.6 94.3 92
R13 99.7 99.5 99.5 98.7
R14 95.1 95.3 95.3 95
R15 98.4 98.6 98.4 98.7
750-900nm光谱覆盖 有 有 有 没有
可见，使用本发明所提出的荧光粉的LED显色指数Ra较对比例3高，同时750-900nm近红外区域的光谱覆盖显著加强。(参见图4实施例8的光谱)。
色温2700K：
与实施例7-9、对比例3相对应设计实施例10-12、对比例4，具体配方参见表6。针对本发明实施例10-12及对比例3的测试结果如表7所示。
表6 实施例10-12及对比例4质量配比表
Figure PCTCN2018118646-appb-000003
表7：实施例10-12及对比例3的测试结果
  实施例10 实施例11 实施例12 对比例4
Ra 97.2 97.4 97.6 95.9
R1 98.8 98.8 98.9 96.6
R2 97.8 97.9 97.9 96.0
R3 93.5 94.4 94.6 93.5
R4 96.1 95.7 95.8 95.2
R5 98.7 98.5 98.6 96.4
R6 97.6 97.6 97.7 95.8
R7 97.1 96.8 96.9 96.1
R8 97.7 97.3 97.5 96.2
R9 98.9 99.3 99.1 94.5
R10 93.6 94.7 95 90
R11 95.4 95.1 95.2 93
R12 94.1 94.3 94.4 92.9
R13 99.2 99.4 99.1 98
R14 95.6 95.6 95.7 96.1
R15 99.4 99.2 99.1 97.3
750-900nm光谱覆盖 有 有 有 没有
可见，使用本发明所提出的荧光粉的LED显色指数Ra较对比例4高，同时750-900nm近红外区域的光谱覆盖显著加强。(参见图5实施例11的光谱)。
本发明通过在荧光粉中添加深红色和近红外荧光粉的方式使得荧光体混合物能够获得包含700nm以上的类自然光光谱，由于700nm以上波段对人眼具有良好的保护作用，因此，本发明的荧光粉将具有良好的市场前景。
以上所述的本发明的实施方式，由于荧光粉的相对用量受到制程、粒径、激活剂含量等因素的影响，所以本发明实施例中所使用的各荧光粉的比例可作为参考，非绝对比例值。
以上所述的仅是本发明的实施方式，在此应当指出，对于本领域的普通技术人员来说，在不脱离本发明创造构思的前提下，还可以做出改进，但这些均属于本发明的保护范围。

Claims (16)

  1. 一种荧光体混合物，其特征在于，所述荧光体混合物包括：
    第一荧光体，所述第一荧光体组成中具有以Eu激活的碱土类卤磷酸盐，所述第一荧光体的发光峰值波长范围为430-500nm；
    第二荧光体，所述第二荧光体组成中具有以Ce激活的稀土类铝酸盐，所述第二荧光体的发光峰值波长范围为500-600nm；
    第三荧光体，所述第三荧光体组成中具有以Eu激活的(钙,锶)铝硅氮，所述第三荧光体的发光峰值波长范围为600-680nm；
    第四荧光体，所述第四荧光体被第一荧光体或第二荧光体发射的光有效激发,所述第四荧光体发光波长范围为680-1200nm。
  2. 根据权利要求1所述的荧光体混合物，其特征在于，其中所述第一荧光体具有如下组成：(Ca,Sr,Ba) 5(PO 4) 3(Cl,Br):Eu 2+。
  3. 根据权利要求3所述的荧光体混合物，其特征在于，其中所述第一荧光体具有如下组成：(Sr,Ba) 5(PO 4) 3Cl:Eu 2+。
  4. 根据权利要求1所述的荧光体混合物，其特征在于，所述第二荧光体具有如下组成：(Y,Lu) 3(Al,Ga) 5O 12:Ce 3+。
  5. 根据权利要求1所述的荧光体混合物，其特征在于，所述第四荧光体组成中具有以Cr激活的稀土类稼锗(硅)酸盐。
  6. 根据权利要求5所述的荧光体混合物，其特征在于，所述第四荧光体具有如下组成：La 3Ga 5(Ge,Si)O 14:Cr 3+。
  7. 根据权利要求1所述的荧光体混合物，其特征在于，所述第一荧光体、所述第二荧光体、所述第三荧光体、所述第四荧光体的质量比满足：(20％-70％)：(10％-65％)：(1.5％-20％)：(10％-40％)。
  8. 根据权利要求1-6任一项所述的荧光体混合物，其特征在于，还包含胶水。
  9. 一种发光装置，其特征在于，包括权利要求1-8任一项所述的荧光体混合物。
  10. 根据权利要求9所述的发光装置，其特征在于，所述发光装置包括采用LED紫光芯片或紫外光芯片作为激发光源。
  11. 根据权利要求10所述的发光装置，其特征在于，所述激发光源具备在300-430nm范围内的发光峰值波长。
  12. 根据权利要求11所述的发光装置，其特征在于，所述激发光源具备在400-430nm范围内的发光峰值波长。
  13. 根据权利要求9所述的发光装置，其特征在于，所述发光装置的光谱覆盖400-780nm可见光区域以及780nm以后的近红外光区域。
  14. 根据权利要求9所述的发光装置，其特征在于，所述发光装置具有大于90的一般显色指数Ra。
  15. 根据权利要求9所述的发光装置，其特征在于，所述发光装置具有大于90的特殊显色指数R1-R15。
  16. 根据权利要求9所述的发光装置，其特征在于，所述发光装置具有2500K至8000K的相关色温。
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