WO2019218859A1 - 全光谱荧光粉、全光谱二极管和全光谱植物灯 - Google Patents

全光谱荧光粉、全光谱二极管和全光谱植物灯 Download PDF

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WO2019218859A1
WO2019218859A1 PCT/CN2019/084613 CN2019084613W WO2019218859A1 WO 2019218859 A1 WO2019218859 A1 WO 2019218859A1 CN 2019084613 W CN2019084613 W CN 2019084613W WO 2019218859 A1 WO2019218859 A1 WO 2019218859A1
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phosphor
full
spectrum
doped
diode
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French (fr)
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林金填
陈磊
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旭宇光电（深圳）股份有限公司
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    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/0883—Arsenides; Nitrides; Phosphides
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    • C09K11/66—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing germanium, tin or lead
    • C09K11/664—Halogenides
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7728—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing europium
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7774—Aluminates
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    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
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    • C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
    • C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
    • C09K11/7775—Germanates
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/08—Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters for producing coloured light, e.g. monochromatic; for reducing intensity of light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Definitions

  • the invention relates to the field of phosphor technology, in particular to a full spectrum phosphor, a full spectrum diode and a full spectrum plant lamp.
  • Plant lighting is an inevitable requirement in the development stage of facility agriculture. It is also a necessary method to solve the contradiction between plant needs light and light supply in plant production. Plant lighting can not only effectively alleviate this contradiction, but also effectively improve plant productivity.
  • the rational use of full-spectrum LED plant growth lamps can not only breed and grow under the conditions that are not suitable for plant growth, but also accelerate the breeding of crops and shorten the growth cycle of crops, and reduce the occurrence of pests and diseases and deformed fruits.
  • the object of the present invention is to provide a full-spectrum phosphor to alleviate the existing use of red-blue light-emitting diodes to illuminate plants, although the growth of plants can be promoted to a certain extent, the plant yield is still low, and the plant leaves are caused.
  • the full-spectrum phosphor provided by the invention comprises a blue phosphor with an emission peak of 440-460 nm, a green phosphor with an emission peak of 520-530 nm, a red phosphor with an emission peak of 650-670 nm, and an emission peak of 710-720 nm.
  • Infrared phosphor, and the mass ratio of the blue phosphor, the green phosphor, the red phosphor and the infrared phosphor is 1: (0.2-0.5): (0.05-0.15): (0.01 -0.1), preferably 1: (0.3-0.4): (0.1-0.15): (0.03-0.08), more preferably 1:0.35:0.12:0.05.
  • the infrared phosphor is doped ion-doped Ca 3 Sc 2 (Si,Ge) 3 O 12 ; preferably, the doping ions are Cr 3+ and rare earth ions;
  • the rare earth ions are Ce 3+ and/or Yb 3+ ;
  • the infrared phosphor is Cr 3+ and Ce 3+ co-doped with Ca 3 Sc 2 (Si,Ge) 3 O 12 .
  • red phosphor is Eu 2+ doped (Ca, Sr) AlSiN 3 and/or Mn 4+ doped K 2 (Si, Ge) F 6 ;
  • the red phosphor is a mixture of Eu 2+ doped (Ca, Sr) AlSiN 3 and Mn 4+ doped K 2 (Si, Ge) F 6 , and the mass ratio of the two is (7-8) ): (2-3), more preferably 8:2.5.
  • the blue phosphor is Eu 2+ doped BaMgAl 11 O 17 and/or Eu 2+ doped AlN;
  • the blue phosphor is a mixture of Eu 2+ -doped BaMgAl 11 O 17 and Eu 2+ -doped AlN, and the mass ratio of the two is (1-2): (1-2), more preferably It is 1:1.
  • the green phosphor is Ce 3+ doped (Lu, Y) 3 (Al, Ga) 5 O 12 and/or Eu 2+ doped (Sr, Ba) 2 SiO 4 ;
  • the green phosphor is Ce 3+ doped (Lu, Y) 3 (Al, Ga) 5 O 12 and Eu 2+ doped (Sr, Ba) 2 SiO 4 , and the mass ratio of the two is (2-4): (1-2), more preferably 2:1.
  • a second object of the present invention is to provide a full spectrum diode comprising a light emitting chip and a full spectrum phosphor provided by the present invention.
  • the light emitting chip is an ultraviolet chip, and the ultraviolet chip has an emission peak of 390-400 nm.
  • the full spectrum diode has an emission spectrum having a chromaticity CIE coordinate X value of 0.45-0.52 and a Y value of 0.2-0.25.
  • a third object of the present invention is to provide a method for preparing a full spectrum diode, comprising the following steps:
  • step (b) the full-spectrum phosphor is mixed with silica gel to form a fluorescent gel, and the fluorescent gel is uniformly coated on the light-emitting chip;
  • the mass ratio of the full spectrum phosphor to the silica gel is (5-10):1, more preferably 7:1.
  • the full-spectrum phosphor provided by the invention cooperates with blue phosphor, green phosphor, red phosphor and infrared phosphor to provide a full-spectrum phosphor suitable for illuminating the whole growth cycle of plants, not only photosynthetic flux High, and able to meet the needs of plant growth photosynthesis, can significantly improve the yield, quality and taste of plants.
  • the full-spectrum diode provided by the invention adopts a light-emitting chip to match the full-spectrum phosphor, so that the full-spectrum phosphor can be irradiated by the light-emitting chip, not only the photon flux is high, but also can meet the needs of plant growth photosynthesis, and significantly improve Plant yield and quality.
  • the full-spectrum plant lamp provided by the invention is prepared by using the full-spectrum phosphor powder provided by the invention or the full-spectrum diode provided by the invention, and the emitted light source not only has high photon flux, but also can conform to plant growth photosynthetic The effect can significantly increase the yield and quality of plants.
  • FIG. 1 is a spectrum diagram of a full spectrum diode according to Embodiment 19 of the present invention.
  • FIG. 2 is a spectrum diagram of a red-blue diode provided in Comparative Example 10 of the present invention.
  • a full-spectrum phosphor according to the present invention comprises a blue phosphor having an emission peak of 440-460 nm, a green phosphor having an emission peak of 520-530 nm, a red phosphor having an emission peak of 650-670 nm, and an emission peak of 710- 720 nm infrared phosphor, and the mass ratio of the blue phosphor, the green phosphor, the red phosphor and the infrared phosphor is 1: (0.2-0.5): (0.05-0.15): ( 0.01-0.1).
  • the blue phosphor, the green phosphor, the red phosphor and the infrared phosphor provided by the invention are all purchased in Rare Earth New Materials Co., Ltd.
  • the masses of the blue phosphor, the green phosphor, the red phosphor, and the infrared phosphor are, for example, 1:0.2:0.05:0.01, 1:0.3:0.1:0.05, 1:0.4:0.15:0.08,1 : 0.5: 0.15: 0.1, 1: 0.3: 0.1: 0.03, 1: 0.4: 0.15: 0.08, 1: 0.35: 0.12: 0.05.
  • the mass ratio of the blue phosphor, the green phosphor, the red phosphor, and the infrared phosphor to 1: (0.3 - 0.4): (0.1 - 0.15): (0.03 - 0.08)
  • the light of the full-spectrum phosphor provided by the invention not only has a high photon flux, but also meets the requirement of different emission peak illumination light during the plant growth cycle, thereby improving the yield and quality of the irradiated plants, especially when the green phosphor, the red color
  • the mass ratio of the phosphor to the infrared phosphor is 1:0.35:0.12:0.05, the photosynthetic photon flux is more improved, and the demand for the illumination light is better matched with the plant growth cycle, and the yield and quality of the irradiated plant can be improved.
  • a blue phosphor having a high quantum efficiency and an emission peak at 450-460 nm and a red phosphor having an emission peak of 650-670 nm are mainly used for plant photosynthesis, and the emission peak value is 520.
  • -530nm green phosphor is mainly used to enhance the photosynthetic photon flux of the light source.
  • the external red phosphor with emission peak at 710-720nm is mainly used for plant sprouting and controlling flowering cycle.
  • the full-spectrum phosphor provided by the invention cooperates with blue phosphor, green phosphor, red phosphor and infrared phosphor to provide a full-spectrum phosphor suitable for illuminating the whole growth cycle of plants, which has high photon flux. And it can be adapted to plant growth photosynthesis, which can significantly increase the yield and quality of plants.
  • the infrared phosphor is ion doped Ca 3 Sc 2 (Si,Ge) 3 O 12 , and the doping ions are Cr 3+ and rare earth ions.
  • the rare earth ions are Ce 3+ and/or Yb 3+ .
  • the full-spectrum phosphor can not only emit under the illumination of the light source.
  • the infrared light with a peak value of 710-720 nm, and its photosynthetic photon flux is high, and can also promote plant sprouting and control the flowering cycle.
  • Cr 3+ and Ce 3+ are used to codo doped Ca 3 Sc 2 (Si,Ge) 3 O 12 , so that the photosynthetic photon flux of the full-spectrum phosphor under illumination by the light source is more High, but also more able to promote plant sprouting and control the flowering cycle.
  • the red phosphor is Eu 2+ doped (Ca,Sr)AlSiN 3 and/or Mn 4+ doped K 2 (Si,Ge)F 6 .
  • Eu 2+ doped (Ca,Sr)AlSiN 3 and/or Mn 4+ doped K 2 (Si,Ge)F 6 is used as the red phosphor, which not only makes the full spectrum phosphor emit a peak of 610 under the illumination of the light source. -720nm red light, and the red light emitted by the quantum conversion efficiency is higher, which can significantly improve the photosynthesis of plants and promote the rapid growth of plants.
  • the red phosphor is a mixture of Eu 2+ doped (Ca, Sr) AlSiN 3 and Mn 4+ doped K 2 (Si, Ge) F 6 , and the mass ratio of the two For (7-8): (2-3).
  • the red phosphor is a mixture of Eu 2+ doped (Ca, Sr) AlSiN 3 and Mn 4+ doped K 2 (Si, Ge) F 6 , and two
  • the quality of the person is, for example, 7:2, 7:2.5, 7:3, 7.5:2, 7.5:2.5, 7.5:3, 8:2, 8:2.5 or 8:3.
  • the red phosphor is a mixture of Eu 2+ doped (Ca, Sr) AlSiN 3 and Mn 4+ doped K 2 (Si, Ge) F 6 , and the mass ratio of the two is (7-8): (2 -3), the light emitted by the full-spectrum phosphor under the illumination of the light source not only has higher quantum conversion efficiency, but also promotes photosynthesis of plants and accelerates the growth rate of plants, especially when Eu 2+ is doped (Ca, Sr When the mass ratio of AlSiN 3 and Mn 4+ doped K 2 (Si,Ge)F 6 is 8:2.5, the growth rate of the plant and the fruit yield are more remarkable.
  • the blue phosphor is Eu 2+ doped BaMgAl 11 O 17 and/or Eu 2+ doped AlN.
  • Eu 2+ doped BaMgAl 11 O 17 and/or Eu 2+ doped AlN is used as the blue phosphor, so that the full-spectrum phosphor can emit blue light with a peak value of 450-460 nm under the illumination of the light source, and its quantum conversion efficiency. High, can significantly promote the growth of plant roots and stems, promote the absorption of chlorophyll and carotene, and promote the photosynthesis of plants.
  • the blue phosphor is a mixture of Eu 2+ -doped BaMgAl 11 O 17 and Eu 2+ -doped AlN, and the mass ratio of the two is (1-2): (1) -2).
  • the blue phosphor is a mixture of Eu 2+ -doped BaMgAl 11 O 17 and Eu 2+ -doped AlN, and the mass of both is 1:1, 1 : 1.5, 1:2, 1.5:1, 1.5:2, 2:1 or 2:1.5.
  • Eu 2+ -doped BaMgAl 11 O 17 and Eu 2+ -doped AlN are synergistically combined to emit blue light.
  • the quantum conversion efficiency is higher, and it can promote the growth of roots and stems of plants, thus effectively shortening the growth cycle of plants, especially when the mass ratio of Eu 2+ -doped BaMgAl 11 O 17 and Eu 2+ -doped AlN is 1.
  • it is 1:, it can significantly promote the growth of roots and stems of plants.
  • the green phosphor is Ce 3+ doped (Lu, Y) 3 (Al, Ga) 5 O 12 and/or Eu 2+ doped (Sr, Ba) 2 SiO 4 .
  • the emission emits green light with a peak value of 520-530 nm, and can significantly increase the photosynthetic photon flux of the full-spectrum phosphor under the illumination of the light source.
  • the green phosphor is a mixture of Ce 3+ doped (Lu, Y) 3 (Al, Ga) 5 O 12 and Eu 2+ doped (Sr, Ba) 2 SiO 4 And the mass ratio of the two is (2-4): (1-2).
  • the green phosphor is Ce 3+ doped (Lu, Y) 3 (Al, Ga) 5 O 12 and/or Eu 2+ doped (Sr, Ba) 2 SiO 4 mixture, and the mass ratio of the two is 2:1, 2.5:1, 3:1, 3.5:1, 4:1, 2:1.5, 2.5:1.5, 3:1.5, 4:1.5, 2 : 2, 2.5:2, 3:2 or 3.5:2.
  • the invention provides a full spectrum diode comprising a light emitting chip and a full spectrum phosphor provided by the invention.
  • the full-spectrum diode provided by the invention can not only emit blue light with a peak value of 450-460 nm, red light with a peak value of 650-670 nm, green light with a peak value of 520-530 nm, but also can emit by using a light-emitting chip matched full-spectrum phosphor.
  • the infrared light with a peak value of 710-720 nm can also significantly increase the photosynthetic photon flux, which can meet the needs of plant growth photosynthesis and significantly improve the yield and quality of plants.
  • the light-emitting chip is an ultraviolet chip, and the emission peak of the ultraviolet chip is 390-400 nm.
  • the spectrum of the full-spectrum diode emits a wider range, which not only provides blue, green, red and infrared light, but also provides ultraviolet light to inhibit the growth of bacteria and plants. The taste and quality.
  • Blu-ray chips are commonly used as emission sources in the market, and blue-light chips are used as emission sources to increase photosynthetic photon flux, but they cannot provide light with emission peaks below 400 nm, which cannot meet the needs of plants for illumination below 400 nm, affecting plants. Taste and quality.
  • the full spectrum diode has an emission spectrum having a chromaticity CIE coordinate X value of 0.45-0.52 and a Y value of 0.2-0.25.
  • the full spectrum diode emission spectrum has the following peaks of 390-400 nm, 480-490 nm, 638-640 nm, 660-665 nm; and has the following troughs of 420-425 nm, 580-590 nm, 642-644 nm. , 830-835nm.
  • the full-spectrum diode provided by the present invention uses an ultraviolet chip as a light source, and the full-spectrum phosphor provided by the invention can provide not only blue light, green light, red light and infrared light but also ultraviolet light, and at the same time It also ensures a high photosynthetic photon flux, which promotes the rapid growth of plants, increases plant yield, and ensures the taste and quality of plant fruits.
  • a method of fabricating a full spectrum diode comprising the steps of:
  • the diode holder is connected to an external power source.
  • step (b) the full-spectrum phosphor is mixed with silica gel to form a fluorescent gel, and the fluorescent gel is uniformly coated on the light-emitting chip.
  • the full-spectrum phosphor By mixing the full-spectrum phosphor with silica gel to make a fluorescent gel, the full-spectrum phosphor is firmly adhered to the light-emitting chip, thereby preventing the full-spectrum phosphor from falling off the light-emitting chip and affecting the emission spectrum.
  • the mass ratio of the full spectrum phosphor to the silica gel is (5-10):1.
  • the mass of the full spectrum phosphor and silica gel is, for example, 5:1, 5.5:1, 6:1, 6.5:1, 7:1, 7.5:1, 8: 1, 8.5:1, 9:1, 9.5:1 or 10:1.
  • the full-spectrum phosphor By limiting the mass ratio of the full-spectrum phosphor to the silica gel to (5-10):1, the full-spectrum phosphor is more uniformly mixed with the silica gel, and the adhesion of the prepared fluorescent gel to the light-emitting chip is good, and the light effect is good.
  • the mass ratio of the full-spectrum phosphor to the silica gel is 7:1, the adhesion of the prepared fluorescent glue to the light-emitting chip is better, and the illumination effect is better.
  • a full spectrum plant lamp comprising a full spectrum phosphor provided by the invention or a full spectrum diode provided by the invention.
  • the full-spectrum plant lamp provided by the invention is prepared by using the full-spectrum phosphor powder provided by the invention or the full-spectrum diode provided by the invention, and the emitted light source not only has high photon flux, but also can conform to plant growth photosynthesis. Can significantly increase the yield and quality of plants.
  • the present embodiment provides a full-spectrum phosphor comprising a blue phosphor having an emission peak of 440-460 nm, a green phosphor having an emission peak of 520-530 nm, a red phosphor having an emission peak of 650-670 nm, and an emission peak.
  • the mass ratio of blue phosphor, green phosphor, red phosphor and infrared phosphor is 1:0.5:0.05:0.1, wherein the blue phosphor is Eu 2+ doped BaMgAl a mixture of 11 O 17 and Eu 2+ doped AlN, and the mass ratio of the two is 1:2; the green phosphor is Ce 3+ doped (Lu, Y) 3 (Al, Ga) 5 O 12 and Eu 2 + doped (Sr,Ba) 2 SiO 4 mixture, and the mass ratio of the two is 4:1; the red phosphor is Eu 2+ doped (Ca,Sr)AlSiN 3 and Mn 4+ doped K 2 ( A mixture of Si, Ge)F 6 , and the mass ratio of the two is 7:3; the infrared phosphor is Cr 3+ and Ce 3+ co-doped with Ca 3 Sc 2 (Si,Ge) 3 O 12 .
  • the present embodiment provides a full-spectrum phosphor comprising a blue phosphor having an emission peak of 440-460 nm, a green phosphor having an emission peak of 520-530 nm, a red phosphor having an emission peak of 650-670 nm, and an emission peak.
  • the mass ratio of blue phosphor, green phosphor, red phosphor and infrared phosphor is 1:0.2:0.15:0.01, wherein the blue phosphor is Eu 2+ doped BaMgAl a mixture of 11 O 17 and Eu 2+ doped AlN, and the mass ratio of the two is 2:1; the green phosphor is Ce 3+ doped (Lu, Y) 3 (Al,Ga) 5 O 12 and Eu 2 + doped (Sr,Ba) 2 SiO 4 mixture, and the mass ratio of the two is 1:1; the red phosphor is Eu 2+ doped (Ca,Sr)AlSiN 3 and Mn 4+ doped K 2 ( A mixture of Si, Ge)F 6 , and the mass ratio of the two is 4:1; the infrared phosphor is Cr 3+ and Ce 3+ co-doped with Ca 3 Sc 2 (Si,Ge) 3 O 12 .
  • the present embodiment provides a full-spectrum phosphor comprising a blue phosphor having an emission peak of 440-460 nm, a green phosphor having an emission peak of 520-530 nm, a red phosphor having an emission peak of 650-670 nm, and an emission peak.
  • the mass ratio of blue phosphor, green phosphor, red phosphor and infrared phosphor is 1:0.3:0.15:0.03, wherein the blue phosphor is Eu 2+ doped BaMgAl a mixture of 11 O 17 and Eu 2+ doped AlN, and the mass ratio of the two is 1:1; the green phosphor is Ce 3+ doped (Lu, Y) 3 (Al, Ga) 5 O 12 and Eu 2 + doped (Sr,Ba) 2 SiO 4 mixture, and the mass ratio of the two is 2:1; the red phosphor is Eu 2+ doped (Ca,Sr)AlSiN 3 and Mn 4+ doped K 2 ( A mixture of Si, Ge)F 6 , and the mass ratio of the two is 8:2.5; the infrared phosphor is Cr 3+ and Ce 3+ co-doped with Ca 3 Sc 2 (Si,Ge) 3 O 12 .
  • the present embodiment provides a full-spectrum phosphor.
  • the difference between this embodiment and the embodiment 3 is that the mass ratio of the blue phosphor, the green phosphor, the red phosphor, and the infrared phosphor is 1:0.4:0.1. : 0.08.
  • This embodiment provides a full-spectrum phosphor.
  • the difference between this embodiment and the third embodiment is that the mass ratio of the blue phosphor, the green phosphor, the red phosphor, and the infrared phosphor is 1:0.35:0.12. :0.05.
  • This embodiment provides a full-spectrum phosphor, and this embodiment is different from Embodiment 5 in that the blue phosphor is Eu 2+ doped BaMgAl 11 O 17 .
  • This embodiment provides a full-spectrum phosphor, and this embodiment is different from Embodiment 5 in that the blue phosphor is Eu 2+ doped AlN.
  • This embodiment provides a full-spectrum phosphor, and this embodiment is different from Embodiment 5 in that the green phosphor is Ce 3+ doped (Lu, Y) 3 (Al, Ga) 5 O 12 .
  • This embodiment provides a full-spectrum phosphor, and this embodiment is different from the embodiment 5 in that the green phosphor is Eu 2+ doped (Sr, Ba) 2 SiO 4 .
  • This embodiment provides a full-spectrum phosphor, and this embodiment is different from Embodiment 5 in that the red phosphor is Eu 2+ doped (Ca, Sr) AlSiN 3 .
  • This embodiment provides a full-spectrum phosphor, and this embodiment is different from Embodiment 5 in that the red phosphor is Mn 4+ doped K 2 (Si, Ge) F 6 .
  • This embodiment provides a full-spectrum phosphor, and this embodiment is different from Embodiment 5 in that the red phosphor is Eu 2+ doped (Ca, Sr) AlSiN 3 and Mn 4+ doped K 2 ( A mixture of Si, Ge)F 6 and a mass ratio of 10:1.
  • the red phosphor is Eu 2+ doped (Ca, Sr) AlSiN 3 and Mn 4+ doped K 2 ( A mixture of Si, Ge)F 6 and a mass ratio of 10:1.
  • This embodiment provides a full-spectrum phosphor, and this embodiment is different from Embodiment 5 in that the red phosphor is Eu 2+ doped (Ca, Sr) AlSiN 3 and Mn 4+ doped K 2 ( A mixture of Si, Ge)F 6 and a mass ratio of 1:2.
  • the red phosphor is Eu 2+ doped (Ca, Sr) AlSiN 3 and Mn 4+ doped K 2 ( A mixture of Si, Ge)F 6 and a mass ratio of 1:2.
  • This embodiment provides a full-spectrum phosphor. This embodiment differs from Example 5 in that the infrared phosphor is Cr 3+ doped Ca 3 Sc 2 (Si, Ge) 3 O 12 .
  • This comparative example provides a phosphor, and this embodiment is different from Example 5 in that no infrared phosphor is added.
  • This comparative example provides a phosphor, and this example is different from Example 5 in that no green phosphor is added.
  • the present comparative example provides a phosphor.
  • the difference between this embodiment and the embodiment 5 is that the mass ratio of the blue phosphor, the green phosphor, the red phosphor and the infrared phosphor is 1:0.1:0.01:0.2. .
  • the present comparative example provides a phosphor.
  • the difference between this embodiment and the embodiment 5 is that the mass ratio of the blue phosphor, the green phosphor, the red phosphor and the infrared phosphor is 1:1:0.5:0.01. .
  • This comparative example provides a red phosphor.
  • Examples 15-28 respectively provide a full-spectrum diode comprising an ultraviolet chip having an emission peak of 450-460 nm and a full-spectrum phosphor provided in Examples 1-14, wherein the full-spectrum phosphor is mixed with silica gel. Fluorescent gel, and the mass ratio of full-spectrum phosphor to silica gel is 7:1, coated on the UV chip.
  • Embodiment 29 provides a full-spectrum diode, and this embodiment is different from Embodiment 19 in that a blue chip having an emission peak of 450 to 460 nm is used as a transmitting chip.
  • Example 30 provides a method for preparing a full spectrum diode, and the full spectrum diodes provided in Examples 15-29 are prepared as follows:
  • Comparative Examples 6-9 respectively provide a diode comprising an ultraviolet chip having an emission peak of 450-460 nm and a phosphor provided by Comparative Example 1-5, wherein the phosphor is mixed with silica gel to prepare a fluorescent paste, and the phosphor The mass ratio to silica gel was 7:1 and was applied to an ultraviolet chip.
  • Comparative Example 10 provides a red-blue diode comprising a blue chip having an emission peak of 450-460 nm and a red phosphor provided in Comparative Example 5, wherein the red phosphor is mixed with silica gel to form a fluorescent gel, and the fluorescent gel and the silica gel are obtained.
  • the mass ratio is 7:1 and is applied to the blue chip.
  • the preparation method of the diode provided in Comparative Example 6-10 is the same as the preparation method of the full spectrum diode provided in Embodiment 19, and details are not described herein again.
  • Examples 31-45 respectively provide a full-spectrum plant lamp comprising the full-spectrum diode and the red-blue diode provided in Examples 15-29, respectively, and the full-spectrum diode and the red-blue tube diode provided in Examples 15-29, respectively. It is the source of illumination.
  • Comparative Examples 11-15 respectively provide a plant lamp comprising the diodes provided in Examples 6-10, respectively, and the diodes provided in Comparative Examples 6-10, respectively, as the illumination source.
  • the blue phosphor, the green phosphor, the red phosphor, and the infrared phosphor in the above examples and comparative examples were purchased and placed in Rare Earth New Materials Co., Ltd.
  • Example 19 The full-spectrum diode provided in Example 19 and the red-blue diode provided in Comparative Example 10 were separately subjected to spectral tests, and the test results are shown in FIGS. 1 and 2.
  • the full spectrum diode provided in Example 19 has an emission spectrum coverage of 380-800 nm
  • the red light blue diode provided in Comparative Example 10 has an emission spectrum range of 440-800 nm. It is explained that the full-spectrum diode provided in Embodiment 19 has a wider spectral coverage by using an ultraviolet chip as a light source, and is more suitable for the whole cycle of plant growth, and can further improve plant yield and quality.
  • the spectrum of the full-spectrum diode provided in Embodiment 19 has the following peaks of 390-400 nm, 480-490 nm, 638-640 nm, 660-665 nm, and the following troughs of 420-425 nm. 580-590 nm, 642-644 nm, 830-835 nm; while the red-blue diode provided in Comparative Example 10 has a spectrum with only peaks of 450-460 nm and 650-660 nm, while having troughs of 490-560 nm and 830-835 nm.
  • the full-spectrum diode provided in Embodiment 19 uses an ultraviolet chip as a light source, and the full-spectrum phosphor can provide not only blue light, green light, red light, and infrared light, but also ultraviolet light, thereby better conforming to the plant. The need for photosynthesis throughout the growth cycle to promote rapid plant growth and increase plant yield and quality.
  • Example 15 (ultraviolet chip + phosphor provided in Example 1) 161% Example 16 (UV chip + phosphor provided in Example 2) 163% Example 17 (UV chip + phosphor provided in Example 3) 173% Example 18 (UV chip + phosphor provided in Example 4) 172% Example 19 (UV chip + phosphor provided in Example 5) 183% Example 20 (UV chip + phosphor provided in Example 6) 158% Example 21 (UV chip + phosphor provided in Example 7) 154%
  • Example 22 (UV chip + phosphor provided in Example 8) 156%
  • Example 23 (UV chip + phosphor provided in Example 9) 159%
  • Example 24 (UV chip + phosphor provided in Example 10) 155%
  • Example 25 (UV chip + phosphor provided in Example 11) 153%
  • Example 26 (UV chip + phosphor provided in Example 12) 154%
  • Example 27 (UV chip + phosphor provided in Example 13) 152%
  • Example 28 UV chip + phosphor provided in Example 14) 158%
  • Example 29 blue light chip + phosphor provided in Example 5
  • the photosynthetic photon fluxes of the full-spectrum diodes provided in Examples 15-29 are significantly higher than the red-blue diodes provided in Comparative Example 10, which indicates that the full-spectrum diode provided by the present invention is integrated with the full spectrum by the ultraviolet chip.
  • Phosphors the conversion efficiency of the full-spectrum phosphor is significantly higher than that of the blue chip with the red phosphor, which greatly increases the photosynthetic photon flux of the diode.
  • Embodiment 19 it can be seen from the comparison between Embodiment 19 and Embodiment 29 that the photosynthetic photon flux of the diode made by using the blue chip as the light source is slightly lower than the photosynthetic photon flux of the diode made of the ultraviolet chip as the light source, which is an explanation of the ultraviolet chip.
  • the full-spectrum phosphor When used as a light source, the full-spectrum phosphor has a higher photon conversion efficiency.
  • Examples 15-19 From the comparison of Examples 15-19 with Examples 20-21, it can be seen that the photosynthetic fluxes of the diodes provided in Examples 15-19 are significantly higher than those of Examples 20-21, which illustrates the full spectrum phosphor used in the diode.
  • the blue phosphor is a mixture of Eu 2+ -doped BaMgAl 11 O 17 and Eu 2+ -doped AlN, and the mass ratio of the two is (1-2): (1-2), Eu 2+ doping
  • the hybrid BaMgAl 11 O 17 and Eu 2+ doped AlN synergistically can significantly improve the quantum conversion efficiency of the full-spectrum phosphor, so that the photosynthetic photon flux of the diode is significantly improved.
  • the photosynthetic photon flux of the diodes provided in Examples 15-19 is significantly higher than in Examples 22-23, which illustrates the full spectrum phosphor used in the diode.
  • the green phosphor is a mixture of Ce 3+ doped (Lu, Y) 3 (Al, Ga) 5 O 12 and Eu 2+ doped (Sr, Ba) 2 SiO 4 , and the mass ratio of the two is ( 2-4): (1-2), Ce 3+ doped (Lu, Y) 3 (Al, Ga) 5 O 12 and Eu 2+ doped (Sr, Ba) 2 SiO 4 synergistically, can significantly improve The quantum conversion efficiency of the full-spectrum phosphors significantly increases the photosynthetic photon flux of the diode.
  • Examples 15-19 From the comparison of Examples 15-19 with Examples 24-27, it can be seen that the photosynthetic photon flux of the diodes provided in Examples 15-19 is significantly higher than that of Examples 24-27, which illustrates the full spectrum phosphor used in the diode.
  • the red phosphor is a mixture of Eu 2+ doped (Ca, Sr) AlSiN 3 and Mn 4+ doped K 2 (Si, Ge) F 6 , and the mass ratio of the two is (7-8): 2-3), Eu 2+ doped (Ca, Sr) AlSiN 3 and Mn 4+ doped K 2 (Si, Ge) F 6 synergistically, can significantly improve the quantum conversion efficiency of the full spectrum phosphor to make the diode The photosynthetic photon flux is significantly improved.
  • Tai'an County of Shandong province was selected as the test site.
  • the adjacent 21 strawberry planting test plots were selected in the test site, which were respectively 1-1-1 in the experimental plot.
  • the area of each plot was 10 mu, of which the full spectrum provided by Examples 31-45.
  • the plant lamp was used to illuminate the test field 1-15, the plant lamp provided in the comparative example 10-15 was used to illuminate the test field 16-20, and the test field 21 was used as the blank control field, and the natural light was irradiated, and the fertilization and hydration were the same during the growth cycle of the strawberry.
  • the growth cycle, yield and quality of strawberry are shown in Table 2, and the quality scoring standards are shown in Table 3.
  • Test field 1 (Example 31 plant lamp) 57 2931 90 Test field 2 (Example 32 plant lamp) 56 2925 91 Test field 3 (Example 33 plant lamp) 54 2974 93 Test field 4 (Example 34 plant lamp) 54 3022 92 Test field 5 (Example 35 plant lamp) 53 3162 95 Test field 6 (Example 36 plant lamp) 61 2732 85 Test field 7 (Example 37 plant lamp) 62 2745 84 Test field 8 (Example 38 plant lamp) 64 2712 83 Test field 9 (Example 39 plant lamp) 62 2705 84 Test field 10 (Example 40 plant lamp) 65 2652 82 Test field 11 (Example 41 plant lamp) 63 2671 81 Test field 12 (Example 42 plant lamp) 62 2703 84 Test field 13 (Example 43 plant lamp) 62 2711 85 Test field 14 (Example 44 plant lamp) 66 2752 86 Test field 15 (Example 45 plant
  • the irradiation of the strawberry with the full-spectrum plant lamp provided by the present invention is more suitable for the full growth cycle of the strawberry than the irradiation of the strawberry with the red-blue plant lamp, and the growth cycle of the strawberry can be shortened. Improve strawberry yield and quality.
  • the plant lamp prepared by using the ultraviolet chip provided in Examples 31-45 together with the full-spectrum phosphor is more in combination with the ultraviolet chip provided in Comparative Example 11 without incorporating the infrared phosphor.
  • the plant lamp made of phosphor can promote the growth rate of the whole growth cycle of strawberry, and can shorten the growth cycle of strawberry and increase the yield and quality of strawberry.
  • the plant lamp prepared by using the ultraviolet chip provided in Examples 31-45 with the full-spectrum phosphor is used in combination with the ultraviolet chip provided in Comparative Example 11 without adding the green phosphor.
  • the plant lamp made of phosphor can promote the growth rate of the whole growth cycle of strawberry, and can shorten the growth cycle of strawberry and increase the yield and quality of strawberry.
  • the phosphor used in the plant lamp is a mixture of blue phosphor, green phosphor, red phosphor and infrared phosphor, and the mass ratio of the four is 1:(0.2-0.5): (0.05-0.15): (0.01-0.1), when the plant lamp made by irradiating strawberry, it can promote the growth rate of strawberry whole growth cycle and shorten the growth cycle of strawberry. To increase the yield and quality of strawberries.
  • Test Field 1-14 From the comparison between Test Field 1-14 and Test Field 15, it can be seen that when the plant lamp adopts the ultraviolet chip as the light source, the emission spectrum of the plant lamp is wider, which is more suitable for the full growth cycle of the strawberry, and can be used as a light source than the blue chip. It can promote the growth rate of strawberry whole growth cycle, shorten the growth cycle of strawberry and increase the yield and quality of strawberry.
  • the blue phosphor is a mixture of Eu 2+ -doped BaMgAl 11 O 17 and Eu 2+ -doped AlN.
  • the mass ratio of the two is (1-2): (1-2), Eu 2+ doped BaMgAl 11 O 17 and Eu 2+ doped AlN synergistically, can promote the growth rate of strawberry full growth cycle It can shorten the growth cycle of strawberries and increase the yield and quality of strawberries.
  • the green phosphor is Ce 3+ doped (Lu, Y) 3 (Al, Ga) 5 O 12 And a mixture of Eu 2+ doped (Sr,Ba) 2 SiO 4 , and the mass ratio of the two is (2-4): (1-2), Ce 3+ doped (Lu, Y) 3 (Al, Ga) 5 O 12 and Eu 2+ doped (Sr,Ba) 2 SiO 4 synergistically promoted the growth rate of strawberry during the whole growth cycle, shortened the growth cycle of strawberry and increased the yield and quality of strawberry.
  • the red phosphor is Eu 2+ doped (Ca, Sr) AlSiN 3 and Mn 4+ doped K a mixture of 2 (Si,Ge)F 6 , and the mass ratio of the two is (7-8): (2-3), Eu 2+ doped (Ca, Sr) AlSiN 3 and Mn 4+ doped K 2 (Si,Ge)F 6 synergistically promotes the growth rate of strawberry during the whole growth cycle, and shortens the growth cycle of strawberry and improves the yield and quality of strawberry.
  • Test Field 1-5 From the comparison between Test Field 1-5 and Test Field 14, it can be seen that when the full-spectrum phosphor is used in the plant lamp, the infrared phosphor is Cr 3+ and Ce 3+ co-doped with Ca 3 Sc 2 (Si, Ge) 3 O. At 12 o'clock, it can promote the growth rate of strawberry whole growth cycle, and can shorten the growth cycle of strawberry and increase the yield and quality of strawberry.

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Abstract

提供一种全光谱荧光粉、全光谱二极管和全光谱植物灯，涉及荧光粉技术领域。全光谱荧光粉包括发射峰值为440-460nm的蓝色荧光粉、发射峰值为520-530nm的绿色荧光粉、发射峰值为650-670nm的红色荧光粉和发射峰值为710-720nm的红外荧光粉，且四者质量比为1∶(0.2-0.5)∶(0.05-0.15)∶(0.01-0.1)。缓解了使用红蓝色发光二极管照射植物，植物产量仍然较低，且会影响植物果实口感和品质的技术问题。全光谱荧光粉适合照射植物全生长周期，不仅光合光子通量高，而且能够契合植物生长光合作用的需要，能够显著提高植物的产量、品质和口感。

Description

全光谱荧光粉、全光谱二极管和全光谱植物灯 技术领域
本发明涉及荧光粉技术领域，尤其是涉及一种全光谱荧光粉、全光谱二极管和全光谱植物灯。
 背景技术
植物照明是设施农业发展阶段的必然需求，也是解决设施植物生产中植物需光和供光矛盾的必要方法，植物照明不仅能够有效缓解此矛盾，还能够有效地提升植物生产力。全光谱LED植物生长灯的合理使用，不仅能在不适合植物生长的条件下进行繁育和生长，而且可以加快农作物的育种和缩短作物的生长周期，减少病虫害及畸形果的发生。
现有市面上常用红蓝色发光二极管照射植物后，尽管能够一定程度上促进植物的生长，但植物产量仍然较低，且会造成植物叶片厚度不足及茎部徒长，影响植物果实口感和品质。
有鉴于此，特提出本发明。
 技术问题
本发明的目的在于提供一种全光谱荧光粉，以缓解了现有使用红蓝色发光二极管照射植物后，尽管能够一定程度上促进植物的生长，但植物产量仍然较低，且会造成植物叶片厚度不足及茎部徒长，影响植物果实口感及品质的技术问题。
 技术解决方案
本发明提供的全光谱荧光粉，包括发射峰值为440-460nm的蓝色荧光粉、发射峰值为520-530nm的绿色荧光粉、发射峰值为650-670nm的红色荧光粉和发射峰值为710-720nm的红外荧光粉，且所述蓝色荧光粉、所述绿色荧光粉、所述红色荧光粉和所述红外荧光粉的质量比为1：（0.2-0.5）：（0.05-0.15）：（0.01-0.1），优选为1：（0.3-0.4）：（0.1-0.15）：（0.03-0.08），更优选为1:0.35:0.12:0.05。
进一步的，所述红外荧光粉为掺杂离子掺杂的Ca 3Sc 2(Si,Ge) 3O 12；优选地，所述掺杂离子为Cr 3+和稀土离子；
优选地，所述稀土离子为Ce 3+和/或Yb 3+；
优选地，所述红外荧光粉为Cr 3+和Ce 3+共同掺杂Ca 3Sc 2(Si,Ge) 3O 12。
进一步的，所述红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和/或Mn 4+掺杂K 2(Si,Ge)F 6；
优选地，所述红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6的混合物，且两者的质量比为（7-8）：（2-3），更优选为8:2.5。
进一步的，所述蓝色荧光粉为Eu 2+掺杂BaMgAl 11O 17和/或Eu 2+掺杂AlN；
优选地，所述蓝色荧光粉为Eu 2+掺杂BaMgAl 11O 17和Eu 2+掺杂AlN的混合物，且两者的质量比为（1-2）：（1-2），更优选为1:1。
进一步的，绿色荧光粉为Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和/或Eu 2+掺杂(Sr,Ba) 2SiO 4；
优选地，所述绿色荧光粉为Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和Eu 2+掺杂(Sr,Ba) 2SiO 4，且两者的质量比为（2-4）：（1-2），更优选为2:1。
本发明的目的之二在于提供一种全光谱二极管，包括发光芯片和本发明提供的全光谱荧光粉。
进一步的，所述发光芯片为紫外芯片，所述紫外芯片的发射峰值为390-400nm。
进一步的，所述全光谱二极管的发射光谱的色度CIE坐标X值为0.45-0.52，Y值为0.2-0.25。
本发明的目的之三在于提供一种全光谱的二极管的制备方法，包括如下步骤：
（a）提供二极管支架，在二极管支架上设置发光芯片，将发光芯片与二极管支架电连接；
（b）提供全光谱荧光粉，将全光谱荧光粉均匀涂覆于发光芯片上，然后封装，即制得全光谱二极管；
优选地，在步骤（b）中，将全光谱荧光粉与硅胶混合制成荧光胶，再将荧光胶均匀涂覆于发光芯片上；
优选地，全光谱荧光粉与硅胶的质量比为（5-10）：1，更优选为7:1。
 有益效果
本发明的目的在于提供一种全光谱植物灯，包括本发明提供的全光谱荧光粉或本发明提供的全光谱二极管。
本发明提供的全光谱荧光粉，通过蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉相互协同，提供了一种适合照射植物全生长周期的全光谱荧光粉，不仅光合光子通量高，而且能够契合植物生长光合作用的需要，能够显著提高植物的产量、品质和口感。
本发明提供的全光谱二极管，通过采用发光芯片匹配全光谱荧光粉，使得全光谱荧光粉能够在发光芯片的照射下，不仅光合光子通量高，而且能够契合植物生长光合作用的需要，显著提高植物的产量和品质。
本发明提供的全光谱植物灯，通过采用本发明提供的全光谱荧光粉或本发明提供的全光谱二级管制备而成，所发出的光源不仅光合光子通量高，而且能够契合植物生长光合作用，能够显著提高植物的产量和品质。
 附图说明
为了更清楚地说明本发明具体实施方式或现有技术中的技术方案，下面将对具体实施方式或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图是本发明的一些实施方式，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例19提供的全光谱二极管的光谱图；
图2为本发明对比例10提供的红蓝光二极管的光谱图。
 本发明的实施方式
下面将结合实施例对本发明的实施方案进行详细描述，但是本领域技术人员将会理解，下列实施例仅用于说明本发明，而不应视为限制本发明的范围。实施例中未注明具体条件者，按照常规条件或制造商建议的条件进行。所用试剂或仪器未注明生产厂商者，均为可以通过市售购买获得的常规产品。
根据本发明的一个全光谱荧光粉，包括发射峰值为440-460nm的蓝色荧光粉、发射峰值为520-530nm的绿色荧光粉、发射峰值为650-670nm的红色荧光粉和发射峰值为710-720nm的红外荧光粉，且所述蓝色荧光粉、所述绿色荧光粉、所述红色荧光粉和所述红外荧光粉的质量比为1：（0.2-0.5）：（0.05-0.15）：（0.01-0.1）。
本发明提供的蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉均购置于有研稀土新材料股份有限公司。
在本发明中，蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉的质量比如为1:0.2:0.05:0.01、1:0.3:0.1:0.05、1:0.4:0.15:0.08、1:0.5：0.15:0.1、1:0.3:0.1:0.03、1:0.4:0.15:0.08、1:0.35:0.12:0.05。
在本发明中，通过将蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉的质量比设定为1：（0.3-0.4）：（0.1-0.15）：（0.03-0.08），使得本发明提供的全光谱荧光粉的光不仅合光子通量高，而且契合植物生长周期对不同发射峰值照射光的需求，从而提升照射植物的产量和品质，尤其是当绿色荧光粉、所述红色荧光粉和所述红外荧光粉的质量比为1:0.35:0.12:0.05时，更能提高光合光子通量，更契合植物生长周期对照射光的需求，更能够提高照射植物的产量和品质。
在本发明提供的全光谱荧光粉中，选用量子效率高且发射峰值位于450-460nm的蓝色荧光粉和发射峰值为650-670nm的红色荧光粉主要用于植物光合作用，选用发射峰值为520-530nm的绿色荧光粉，主要用于提升光源的光合光子通量，选用发射峰值位于710-720nm的外红荧光粉，主要用于植物萌芽及控制开花周期。本发明提供的全光谱荧光粉通过蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉相互协同，提供了一种适合照射植物全生长周期的全光谱荧光粉，不仅光合光子通量高，而且能够契合植物生长光合作用，能够显著提高植物的产量和品质。
在本发明的一种优选实施方式中，红外荧光粉为掺杂离子的Ca 3Sc 2(Si,Ge) 3O 12，所述掺杂离子为Cr 3+和稀土离子。
通过选用Cr 3+和稀土离子掺杂Ca 3Sc 2(Si,Ge) 3O 12作为红外荧光粉，使得其在光源照射下，具有更高的能量传递效率，从而具有更高的光合子通量。
在本发明的一种优选实施方式中，稀土离子为Ce 3+和/或Yb 3+。
通过选用Cr 3+和Ce 3+或Cr 3+和Yb 3+共同掺杂Ca 3Sc 2(Si,Ge) 3O 12作为红外荧光粉，使得全光谱荧光粉在光源照射下，不仅能够发射峰值为710-720nm的红外光，而且其光合光子通量高，同时还能够促进植物萌芽及控制开花周期。
在本发明的一种优选实施方式中，选用Cr 3+和Ce 3+共同掺杂Ca 3Sc 2(Si,Ge) 3O 12，使得全光谱荧光粉在光源照射下的光合光子通量更高，同时更能够促进植物萌芽及控制开花周期。
在本发明的一种优选实施方式中，红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和/或Mn 4+掺杂K 2(Si,Ge)F 6。
选用Eu 2+掺杂(Ca,Sr)AlSiN 3和/或Mn 4+掺杂K 2(Si,Ge)F 6作为红色荧光粉，不仅使得全光谱荧光粉在光源照射下能够发射峰值为610-720nm的红光，而且发出的红光的量子转换效率高，更能够显著提高植物的光合作用，促进植物快速生长。
在本发明的进一步优选实施方式中，红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6的混合物，且两者的质量比为（7-8）：（2-3）。
在本发明的典型但非限制性的实施方式中，红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6的混合物，且两者的质量比如为7:2、7:2.5、7:3、7.5:2、7.5:2.5、7.5:3、8:2、8:2.5或8:3。
当红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6的混合物，且两者的质量比为（7-8）：（2-3）时，全光谱荧光粉在光源照射下发出的光不仅量子转换效率更高，而且更能够促进植物的光合作用，加快植物的生长速度，尤其是当Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6的质量比为8:2.5时，其对植物的生长速度和果实产量的提升更显著。
在本发明的一种优选实施方式中，蓝色荧光粉为Eu 2+掺杂BaMgAl 11O 17和/或Eu 2+掺杂AlN。
选用Eu 2+掺杂BaMgAl 11O 17和/或Eu 2+掺杂AlN作为蓝色荧光粉，使得全光谱荧光粉不仅能够在光源照射下发射峰值为450-460nm 的蓝光，而且其量子转换效率高，能够显著促进植物根、茎部位生长，促进叶绿素和胡萝卜素的吸收，同时还能促进植物进行光合作用。
在本发明的一种优选实施方式中，蓝色荧光粉为Eu 2+掺杂BaMgAl 11O 17和Eu 2+掺杂AlN的混合物，且两者的质量比为（1-2）：（1-2）。
在本发明的典型但非限制性的实施方式中，蓝色荧光粉为Eu 2+掺杂BaMgAl 11O 17和Eu 2+掺杂AlN的混合物，且两者的质量比如为1:1、1:1.5、1:2、1.5:1、1.5:2、2:1或2:1.5。
通过选用Eu 2+掺杂BaMgAl 11O 17和Eu 2+掺杂AlN的混合物作为蓝色荧光粉，使得Eu 2+掺杂BaMgAl 11O 17和Eu 2+掺杂AlN相互协同，发出的蓝光的量子转换效率更高，也更能促进植物根、茎部位的生长，从而有效缩短植物的生长周期，尤其是当Eu 2+掺杂BaMgAl 11O 17和Eu 2+掺杂AlN的质量比为1:1时，更能够显著促进植物根、茎部的生长。
在本发明的一种优选实施方式中，绿色荧光粉为Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和/或Eu 2+掺杂(Sr,Ba) 2SiO 4。
选用Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和/或Eu 2+掺杂(Sr,Ba) 2SiO 4作为绿色荧光粉，使得全光谱荧光粉不仅能够在光源照射下发射峰值为520-530nm 的绿光，而且能够显著提高全光谱荧光粉在光源照射下的光合光子通量。
在本发明的一种优选实施方式中，绿色荧光粉为Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和Eu 2+掺杂(Sr,Ba) 2SiO 4的混合物，且两者的质量比为（2-4）：（1-2）。
在本发明的典型但非限制性的实施方式中，绿色荧光粉为Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和/或Eu 2+掺杂(Sr,Ba) 2SiO 4的混合物，且两者的质量比为2:1、2.5:1、3:1、3.5:1、4:1、2:1.5、2.5:1.5、3:1.5、4:1.5、2:2、2.5:2、3:2或3.5:2。
通过选用Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和Eu 2+掺杂(Sr,Ba) 2SiO 4的混合物作为绿色荧光粉，使得Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和Eu 2+掺杂(Sr,Ba) 2SiO 4相互协同，使得全光谱荧光粉的光合光子通量更高，更有利于提高植物的生长速度和产量，尤其是当两者的质量比为2:1时，能更促进植物的生长和增收。
根据本发明的第二个方面，本发明提供了一种全光谱二极管，包括发光芯片和本发明提供的全光谱荧光粉。
本发明提供的全光谱二极管，通过采用发光芯片匹配全光谱荧光粉，不仅能够发射峰值为450-460nm的蓝光、峰值为650-670nm的红光、峰值为520-530nm的绿光，而且能够发射峰值为710-720nm的红外光，同时还能够显著提高光合光子通量，从而能够契合植物生长光合作用的需要，显著提高植物的产量和品质。
在本发明的一种优选实施方式中，发光芯片为紫外芯片，紫外芯片的发射峰值为390-400nm。
通过选用紫外芯片作为发射光源，使得全光谱二极管发射的光谱的范围更宽，不仅能够提供蓝光、绿光、红光和红外光，还能够提供紫外光照射，从而抑制菌类的生长，提高植物的口感和品质。
市面上常用蓝光芯片作为发射光源，选用蓝光芯片作为发射光源，能够提高光合光子通量，但是其无法提供发射峰值为400nm以下的光，从而不能契合植物对于400nm以下的光照的需要，影响植物的口感和品质。
在本发明的一种优选实施方式中，全光谱二极管的发射光谱的色度CIE坐标X值为0.45-0.52，Y值为0.2-0.25。
在本发明的一种优选实施方式中，全光谱二极管发射光谱具有如下波峰390-400nm，480-490nm，638-640nm，660-665nm；同时具有以下波谷420-425nm，580-590nm，642-644nm，830-835nm。
植物在生长过程中，除光合作用外，在萌芽、分枝、开花和结果等阶段均需要一定的光刺激才能完成；因此，植物除光合作用所需红、蓝光外，在紫外和红外区域还需要相应的光波段，本发明提供的全光谱二极管采用紫外芯片作为光源，配合本发明提供的全光谱荧光粉，不仅能够提供蓝光、绿光、红光和红外光，还能够提供紫外光，同时还能够保证较高的光合光子通量，从而促进植物的快速生长，提高植物产量，并保证植物果实的口感和品质。
根据本发明的第三个方面，本发明提供了一种全光谱二极管的制备方法，包括如下步骤：
（a）提供二极管支架，在二极管支架上设置发光芯片，将发光芯片与二极管支架电连接；
（b）提供全光谱荧光粉，将全光谱荧光粉均匀涂覆于发光芯片上，然后封装，即制得全光谱二极管。
在本发明中，二极管支架与外部电源连接。
在本发明的一种优选实施方式中，在步骤（b）中，将全光谱荧光粉与硅胶混合制成荧光胶，再将荧光胶均匀涂覆于发光芯片上。
通过将全光谱荧光粉与硅胶混合制成荧光胶，以便于将全光谱荧光粉牢固粘附于发光芯片上，避免全光谱荧光粉从发光芯片上脱落，影响发射光谱。
在本发明的一种优选实施方式中，全光谱荧光粉与硅胶的质量比为（5-10）:1。
在本发明的典型但非限制性的实施方式中，全光谱荧光粉与硅胶的质量比如为5:1、5.5:1、6:1、6.5:1、7:1、7.5:1、8:1、8.5:1、9:1、9.5:1或10:1。
通过将全光谱荧光粉与硅胶的质量比限定为（5-10）:1，以使得全光谱荧光粉与硅胶混合的更加均匀，制成的荧光胶与发光芯片的粘附性能佳，光照效果好，尤其是当全光谱荧光粉与硅胶的质量比为7:1时，所制成的荧光胶与发光芯片的粘附性能更佳，光照效果更好。
根据本发明的第四个方面，本发明提供了一种全光谱植物灯，包括本发明提供的全光谱荧光粉或本发明提供的全光谱二极管。
本发明提供的全光谱植物灯，通过采用本发明提供的全光谱荧光粉或本发明提供的全光谱二极管制备而成，所发出的光源不仅光合光子通量高，而且能够契合植物生长光合作用，能够显著提高植物的产量和品质。
下面结合实施例和对比例对本发明提供的技术方案做进一步的描述。
实施例1
本实施例提供了一种全光谱荧光粉，包括发射峰值为440-460nm的蓝色荧光粉、发射峰值为520-530nm的绿色荧光粉、发射峰值为650-670nm的红色荧光粉和发射峰值为710-720nm的红外荧光粉，且蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉的质量比为1:0.5:0.05:0.1，其中，蓝色荧光粉为Eu 2+掺杂BaMgAl 11O 17和Eu 2+掺杂AlN的混合物，且两者的质量比为1:2；绿色荧光粉为Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和Eu 2+掺杂(Sr,Ba) 2SiO 4的混合物，且两者的质量比为4:1；红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6的混合物，且两者的质量比为7:3；红外荧光粉为Cr 3+和Ce 3+共同掺杂Ca 3Sc 2(Si,Ge) 3O 12。
实施例2
本实施例提供了一种全光谱荧光粉，包括发射峰值为440-460nm的蓝色荧光粉、发射峰值为520-530nm的绿色荧光粉、发射峰值为650-670nm的红色荧光粉和发射峰值为710-720nm的红外荧光粉，且蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉的质量比为1:0.2:0.15:0.01，其中，蓝色荧光粉为Eu 2+掺杂BaMgAl 11O 17和Eu 2+掺杂AlN的混合物，且两者的质量比为2:1；绿色荧光粉为Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和Eu 2+掺杂(Sr,Ba) 2SiO 4的混合物，且两者的质量比为1:1；红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6的混合物，且两者的质量比为4:1；红外荧光粉为Cr 3+和Ce 3+共同掺杂Ca 3Sc 2(Si,Ge) 3O 12。
实施例3
本实施例提供了一种全光谱荧光粉，包括发射峰值为440-460nm的蓝色荧光粉、发射峰值为520-530nm的绿色荧光粉、发射峰值为650-670nm的红色荧光粉和发射峰值为710-720nm的红外荧光粉，且蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉的质量比为1:0.3:0.15:0.03，其中，蓝色荧光粉为Eu 2+掺杂BaMgAl 11O 17和Eu 2+掺杂AlN的混合物，且两者的质量比为1:1；绿色荧光粉为Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和Eu 2+掺杂(Sr,Ba) 2SiO 4的混合物，且两者的质量比为2:1；红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6的混合物，且两者的质量比为8:2.5；红外荧光粉为Cr 3+和Ce 3+共同掺杂Ca 3Sc 2(Si,Ge) 3O 12。
实施例4
本实施例提供了一种全光谱荧光粉，本实施例与实施例3的不同之处在于，蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉的质量比为1:0.4:0.1:0.08。
实施例5
本实施例提供了一种全光谱荧光粉，本实施例与实施例3的不同之处在于，蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉的质量比为1:0.35:0.12:0.05。
实施例6
本实施例提供了一种全光谱荧光粉，本实施例与实施例5的不同之处在于，蓝色荧光粉为Eu 2+掺杂BaMgAl 11O 17。
实施例7
本实施例提供了一种全光谱荧光粉，本实施例与实施例5的不同之处在于，蓝色荧光粉为Eu 2+掺杂AlN。
实施例8
本实施例提供了一种全光谱荧光粉，本实施例与实施例5的不同之处在于，绿色荧光粉为Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12。
实施例9
本实施例提供了一种全光谱荧光粉，本实施例与实施例5的不同之处在于，绿色荧光粉为Eu 2+掺杂(Sr,Ba) 2SiO 4。
实施例10
本实施例提供了一种全光谱荧光粉，本实施例与实施例5的不同之处在于，红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3。
实施例11
本实施例提供了一种全光谱荧光粉，本实施例与实施例5的不同之处在于，红色荧光粉为Mn 4+掺杂K 2(Si,Ge)F 6。
实施例12
本实施例提供了一种全光谱荧光粉，本实施例与实施例5的不同之处在于，红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6的混合物，且两者的质量比为10:1。
实施例13
本实施例提供了一种全光谱荧光粉，本实施例与实施例5的不同之处在于，红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6的混合物，且两者的质量比为1:2。
实施例14
本实施例提供了一种全光谱荧光粉，本实施例与实施例5的不同之处在于，红外荧光粉为Cr 3+掺杂Ca 3Sc 2(Si,Ge) 3O 12。
对比例1
本对比例提供了一种荧光粉，本实施例与实施例5的不同之处在于，未加入红外荧光粉。
对比例2
本对比例提供了一种荧光粉，本实施例与实施例5的不同之处在于，未加入绿色荧光粉。
对比例3
本对比例提供了一种荧光粉，本实施例与实施例5的不同之处在于，蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉的质量比为1：0.1：0.01：0.2。
对比例4
本对比例提供了一种荧光粉，本实施例与实施例5的不同之处在于，蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉的质量比为1：1：0.5：0.01。
对比例5
本对比例提供了一种红色荧光粉。
实施例15-28
实施例15-28分别提供了一种全光谱二极管，分别包括发射峰值为450-460nm的紫外芯片和实施例1-14提供的全光谱荧光粉，其中，全光谱荧光粉与硅胶混合后制成荧光胶，且全光谱荧光粉与硅胶的质量比为7:1，涂覆于紫外芯片上。
实施例29
实施例29提供了一种全光谱二极管，本实施例与实施例19的不同之处在于，采用发射峰值为450-460nm的蓝光芯片作为发射芯片。
实施例30
实施例30提供了一种全光谱二级管的制备方法，实施例15-29提供的全光谱二极管均按照如下方法制备而成：
（a）提供二极管支架，在二极管支架上设置发光芯片，将发光芯片与二极管支架电连接；
（b）提供全光谱荧光粉，将全光谱荧光粉与硅胶按照质量比7:1混合制成荧光胶，再将荧光胶均匀涂覆于发光芯片上均匀涂覆于发光芯片上，然后封装，即制得全光谱二极管。
对比例6-10
对比例6-9分别提供了一种二极管，分别包括发射峰值为450-460nm的紫外芯片和对比例1-5提供的荧光粉，其中，荧光粉与硅胶混合后制成荧光胶，且荧光粉与硅胶的质量比为7:1，涂覆于紫外芯片上。
对比例10提供了一种红蓝光二极管，包括发射峰值为450-460nm的蓝光芯片和对比例5提供的红色荧光粉，其中，红色荧光粉与硅胶混合后制成荧光胶，且荧光胶与硅胶的质量比为7:1，涂覆于蓝光芯片上。
对比例6-10提供的二极管的制备方法与实施例19提供的全光谱二极管的制备方法相同，在此不再赘述。
实施例31-45
实施例31-45分别提供了一种全光谱植物灯，分别包括实施例15-29提供的全光谱二极管及红蓝光二极管，且分别以实施例15-29提供的全光谱二极管及红蓝管二极管为照射源。
对比例11-15
对比例11-15分别提供了一种植物灯，分别包括实施例6-10提供的二极管，且分别以对比例6-10提供的二极管为照射源。
需要说明的是，上述实施例和对比例中的蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉均购置于有研稀土新材料股份有限公司。
试验例1
将实施例19提供的全光谱二极管和对比例10提供的红蓝光二极管分别进行光谱测试，测试结果如图1和图2所示。
从图1和图2的对比可以看出，实施例19提供的全光谱二极管的发射光谱的覆盖范围为380-800nm，而对比例10提供的红蓝光二极管的发射光谱范围为440-800nm，这说明实施例19提供的全光谱二极管通过采用紫外芯片作为光源，其光谱覆盖范围更宽，更契合植物生长全周期的需要，更能够提高植物的产量和品质。
另外，从图1和图2还可以看出，实施例19提供的全光谱二极管的光谱具有如下波峰390-400nm，480-490nm，638-640nm，660-665nm，同时具有以下波谷420-425nm，580-590nm，642-644nm，830-835nm；而对比例10提供的红蓝光二极管的光谱仅具有波峰450-460nm和650-660nm，同时具有波谷490-560nm和830-835nm。由此可以看出，实施例19提供的全光谱二极管采用紫外芯片作为光源，配合全光谱荧光粉，不仅能够提供蓝光、绿光、红光和红外光，还能够提供紫外光，从而更契合植物生长全周期对光合作用的需求，以促进植物的快速生长，提高植物产量和品质。
试验例2
将实施例15-29和对比例6-10提供的二极管分别进行光合光子通量测试，结果如表1所示。
表1 二极管光合光子通量测试数据表
  光合光子通量
实施例15（紫外芯片+实施例1提供的荧光粉） 161%
实施例16（紫外芯片+实施例2提供的荧光粉） 163%
实施例17（紫外芯片+实施例3提供的荧光粉） 173%
实施例18（紫外芯片+实施例4提供的荧光粉） 172%
实施例19（紫外芯片+实施例5提供的荧光粉） 183%
实施例20（紫外芯片+实施例6提供的荧光粉） 158%
实施例21（紫外芯片+实施例7提供的荧光粉） 154%
实施例22（紫外芯片+实施例8提供的荧光粉） 156%
实施例23（紫外芯片+实施例9提供的荧光粉） 159%
实施例24（紫外芯片+实施例10提供的荧光粉） 155%
实施例25（紫外芯片+实施例11提供的荧光粉） 153%
实施例26（紫外芯片+实施例12提供的荧光粉） 154%
实施例27（紫外芯片+实施例13提供的荧光粉） 152%
实施例28（紫外芯片+实施例14提供的荧光粉） 158%
实施例29（蓝光芯片+实施例5提供的荧光粉） 166%
对比例6（紫外芯片+对比例1提供的荧光粉） 183%
对比例7（紫外芯片+对比例2提供的荧光粉） 112%
对比例8（紫外芯片+对比例3提供的荧光粉） 121%
对比例9（紫外芯片+对比例4提供的荧光粉） 118%
对比例10（蓝光芯片+对比例10提供的荧光粉） 100%
从表1可以看出，实施例15-29提供的全光谱二极管的光合光子通量均显著高于对比例10提供的红蓝光二极管，这说明本发明提供的全光谱二极管通过紫外芯片配合全光谱荧光粉，其全光谱荧光粉的转化效率显著高于蓝光芯片配合红光荧光粉制成的二极管，从而大大提高了二极管的光合光子通量。
从实施例19与实施例29的对比可以看出，采用蓝光芯片作为光源制成的二极管的光合光子通量稍低于紫外芯片作为光源制成的二极管的光合光子通量，这是说明紫外芯片作为光源时，全光谱荧光粉的光子转换效率更高。
从实施例15-28与对比例6的对比可以看出，对比例6提供的二极管的光合光子通量高于实施例15-18，这说明在全光谱荧光粉中加入红外荧光粉，尽管能拓宽光谱覆盖范围，但是会降低光合光子通量。
从实施例15-28与对比例7的对比可以看出，对比例7提供的二极管的光合光子通量显著低于实施例15-28，这说明在全光谱荧光粉中加入绿色荧光粉，能够使得绿色荧光粉与红色荧光粉、蓝色荧光粉及红外荧光粉相互协同，一定程度上弥补红外荧光粉加入所带来的光合光子通量不足的缺点。
从实施例15-28与对比例8-9的对比可以看出，当二极管中所采用的全光谱荧光粉中，蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉的质量比为1：（0.2-0.5）：（0.05-0.15）：（0.01-0.1）时，其所制成的全光谱二极管的光子转换效率更高，光合光子通量更高。
从实施例15-19与实施例20-21的对比可以看出，实施例15-19提供的二极管的光合光合通量显著高于实施例20-21，这说明当二极管采用的全光谱荧光粉中，蓝色荧光粉为Eu 2+掺杂BaMgAl 11O 17与Eu 2+掺杂AlN的混合物，且两者的质量比为（1-2）：（1-2）时，Eu 2+掺杂BaMgAl 11O 17与Eu 2+掺杂AlN相互协同，能够显著提高全光谱荧光粉的量子转换效率使得二极管的光合光子通量显著提高。
从实施例15-19与实施例22-23的对比可以看出，实施例15-19提供的二极管的光合光子通量显著高于实施例22-23，这说明当二极管采用的全光谱荧光粉中，绿色荧光粉为Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和Eu 2+掺杂(Sr,Ba) 2SiO 4的混合物，且两者的质量比为（2-4）：（1-2），Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和Eu 2+掺杂(Sr,Ba) 2SiO 4相互协同，能够显著提高全光谱荧光粉的量子转换效率使得二极管的光合光子通量显著提高。
从实施例15-19与实施例24-27的对比可以看出，实施例15-19提供的二极管的光合光子通量显著高于实施例24-27，这说明当二极管采用的全光谱荧光粉中，红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6的混合物，且两者的质量比为（7-8）：（2-3）时，Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6相互协同，能够显著提高全光谱荧光粉的量子转换效率使得二极管的光合光子通量显著提高。
从实施例15-19与实施例28的对比可以看出，当二极管采用的全光谱荧光粉中，实施例15-19提供的二极管的光合光子通量显著高于实施例28，这说明红外荧光粉为Cr 3+和Ce 3+共同掺杂Ca 3Sc 2(Si,Ge) 3O 12时，能够显著提高全光谱荧光粉的量子转换效率，从而提高二极管的光合光子通量。
试验例3
选取以山东省泰安县为试验点，试验点内选取相邻的21块草莓种植试验田，分别为试验田1-21，每块试验田的面积为10亩，其中，实施例31-45提供的全光谱植物灯用于照射试验田1-15，对比例10-15提供的植物灯用于照射试验田16-20，试验田21为空白对照田，采用自然光照射，在草莓的生长周期内施肥和补水情况均相同，草莓的生长周期、产量和品质情况如表2所示，其中品质评分标准如表3所示。
表2  草莓生长数据表
  生长周期（天） 产量（kg/亩） 品质（分）
试验田1（实施例31植物灯） 57 2931 90
试验田2（实施例32植物灯） 56 2925 91
试验田3（实施例33植物灯） 54 2974 93
试验田4（实施例34植物灯） 54 3022 92
试验田5（实施例35植物灯） 53 3162 95
试验田6（实施例36植物灯） 61 2732 85
试验田7（实施例37植物灯） 62 2745 84
试验田8（实施例38植物灯） 64 2712 83
试验田9（实施例39植物灯） 62 2705 84
试验田10（实施例40植物灯） 65 2652 82
试验田11（实施例41植物灯） 63 2671 81
试验田12（实施例42植物灯） 62 2703 84
试验田13（实施例43植物灯） 62 2711 85
试验田14（实施例44植物灯） 66 2752 86
试验田15（实施例45植物灯） 68 2567 78
试验田16（对比例11植物灯） 70 2246 70
试验田17（对比例12植物灯） 71 2227 67
试验田18（对比例13植物灯） 72 2352 68
试验田19（对比例14植物灯） 70 2364 66
试验田20（对比例15植物灯） 70 2124 65
试验田21（自然光） 80 1625 100
表3草莓品质评分标准
外观（30分） 口感（30分） 营养物质含量（40分）
色泽红艳，大小适中 （26-30分）   色泽有差异，大小均一性较差 （21-25分）   色泽差异显著，大小均一性差 （20分以下） 酸甜适中，无涩味 （26-30分）   偏酸或偏甜，稍有涩味 （21-25分）           涩味明显 （20分以下） 可溶性糖含量和有机酸含量适中，糖酸比介于12.5-14.5之间（30-40分） 可溶性糖含量稍高或有机酸含量稍高，糖酸比偏低或偏高 （20-30分） 可溶性糖含量过高或有机酸含量过高，糖酸比严重偏低或严重偏高（20分以下）
从表2可以看出，从试验田1-15草莓的生长周期、产量和品质均显著高于试验田21，这说明采用本发明提供的全光谱植物灯照射草莓能够显著缩短草莓的生长周期，提高草莓产量和品质。
从试验田1-15与试验田20的对比可以看出，采用本发明提供的全光谱植物灯照射草莓比采用红蓝光植物灯照射草莓更契合草莓全生长周期的需要，更能够缩短草莓的生长周期，提高草莓产量和品质。
从试验田1-14和试验田16的对比可以看出，采用实施例31-45提供的紫外芯片配合全光谱荧光粉制成的植物灯比采用对比例11提供的紫外芯片配合未加入红外荧光粉的荧光粉制成的植物灯，更能够促进草莓全生长周期的生长速度，更能够缩短草莓的生长周期，提高草莓产量和品质。
从试验田1-14和试验田17的对比可以看出，采用实施例31-45提供的紫外芯片配合全光谱荧光粉制成的植物灯比采用对比例11提供的紫外芯片配合未加入绿色荧光粉的荧光粉制成的植物灯，更能够促进草莓全生长周期的生长速度，更能够缩短草莓的生长周期，提高草莓产量和品质。
从试验田1-14与试验田18-19的对比可以看出，当植物灯中采用的荧光粉为蓝色荧光粉、绿色荧光粉、红色荧光粉和红外荧光粉的混合物，且四者质量比为1：（0.2-0.5）：（0.05-0.15）：（0.01-0.1）时，其所制成的植物灯照射草莓后，更能够促进草莓全生长周期的生长速度，更能够缩短草莓的生长周期，提高草莓产量和品质。
从试验田1-14与试验田15的对比可以看出，当植物灯采用紫外芯片作为光源后，使得植物灯的发射光谱覆盖范围更宽，更适合草莓全生长周期需求，能够比采用蓝光芯片作为光源更能够促进草莓全生长周期的生长速度，更能够缩短草莓的生长周期，提高草莓产量和品质。
从试验田1-5与试验田6-7的对比可以看出，当植物灯中采用全光谱荧光粉中，蓝色荧光粉为Eu 2+掺杂BaMgAl 11O 17与Eu 2+掺杂AlN的混合物，且两者的质量比为（1-2）：（1-2）时，Eu 2+掺杂BaMgAl 11O 17与Eu 2+掺杂AlN相互协同，更能够促进草莓全生长周期的生长速度，更能够缩短草莓的生长周期，提高草莓产量和品质。
从试验田1-5与试验田8-9的对比可以看出，当植物灯中采用全光谱荧光粉中，绿色荧光粉为Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和Eu 2+掺杂(Sr,Ba) 2SiO 4的混合物，且两者的质量比为（2-4）：（1-2），Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和Eu 2+掺杂(Sr,Ba) 2SiO 4相互协同，更能够促进草莓全生长周期的生长速度，更能够缩短草莓的生长周期，提高草莓产量和品质。
从试验田1-5与试验田10-13的对比可以看出，当植物灯中采用全光谱荧光粉中，红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6的混合物，且两者的质量比为（7-8）：（2-3）时，Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6相互协同，更能够促进草莓全生长周期的生长速度，更能够缩短草莓的生长周期，提高草莓产量和品质。
从试验田1-5与试验田14的对比可以看出，当植物灯中采用全光谱荧光粉中，红外荧光粉为Cr 3+和Ce 3+共同掺杂Ca 3Sc 2(Si,Ge) 3O 12时，更能够促进草莓全生长周期的生长速度，更能够缩短草莓的生长周期，提高草莓产量和品质。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (10)

  1. 一种全光谱荧光粉，其特征在于，包括发射峰值为440-460nm的蓝色荧光粉、发射峰值为520-530nm的绿色荧光粉、发射峰值为650-670nm的红色荧光粉和发射峰值为710-720nm的红外荧光粉，且所述蓝色荧光粉、所述绿色荧光粉、所述红色荧光粉和所述红外荧光粉的质量比为1：（0.2-0.5）：（0.05-0.15）：（0.01-0.1），优选为1：（0.3-0.4）：（0.1-0.15）：（0.03-0.08），更优选为1:0.35:0.12:0.05。
  2. 根据权利要求1所述的全光谱荧光粉，其特征在于，所述红外荧光粉为掺杂离子掺杂的Ca 3Sc 2(Si,Ge) 3O 12；
    优选地，所述掺杂离子为Cr 3+和稀土离子；
    优选地，所述稀土离子为Ce 3+和/或Yb 3+；
    优选地，所述红外荧光粉为Cr 3+和Ce 3+共同掺杂Ca 3Sc 2(Si,Ge) 3O 12。
  3. 根据权利要求1所述的全光谱荧光粉，其特征在于，所述红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和/或Mn 4+掺杂K 2(Si,Ge)F 6；
    优选地，所述红色荧光粉为Eu 2+掺杂(Ca,Sr)AlSiN 3和Mn 4+掺杂K 2(Si,Ge)F 6的混合物，且两者的质量比为（7-8）：（2-3），更优选为8:2.5。
  4. 根据权利要求3所述的全光谱荧光粉，其特征在于，所述蓝色荧光粉为Eu 2+掺杂BaMgAl 11O 17和/或Eu 2+掺杂AlN；
    优选地，所述蓝色荧光粉为Eu 2+掺杂BaMgAl 11O 17和Eu 2+掺杂AlN的混合物，且两者的质量比为（1-2）：（1-2），更优选为1:1。
  5. 根据权利要求3所述的全光谱荧光粉，其特征在于，所述绿色荧光粉为Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和/或Eu 2+掺杂(Sr,Ba) 2SiO 4；
    优选地，所述绿色荧光粉为Ce 3+掺杂(Lu,Y) 3(Al,Ga) 5O 12和Eu 2+掺杂(Sr,Ba) 2SiO 4，且两者的质量比为（2-4）：（1-2），更优选为2:1。
  6. 一种全光谱二极管，其特征在于，包括发光芯片和权利要求1-5任一项所述的全光谱荧光粉。
  7. 根据权利要求6所述的全光谱二极管，其特征在于，所述发光芯片为紫外芯片，所述紫外芯片的发射峰值为390-400nm。
  8. 根据权利要求7所述的全光谱二极管，其特征在于，所述全光谱二极管的发射光谱的色度区块CIE坐标X值为0.45-0.52，Y值为0.2-0.25。
  9. 根据权利要求6-8任一项所述的全光谱二极管的制备方法，其特征在于，包括如下步骤：
    （a）提供二极管支架，在二极管支架上设置发光芯片，将发光芯片与二极管支架电连接；
    （b）提供全光谱荧光粉，将全光谱荧光粉均匀涂覆于发光芯片上，然后封装，即制得全光谱二极管；
    优选地，在步骤（b）中，将全光谱荧光粉与硅胶混合制成荧光胶，再将荧光胶均匀涂覆于发光芯片上；
    优选地，全光谱荧光粉与硅胶的质量比为（5-10）：1，更优选为7:1。
  10. 一种全光谱植物灯，其特征在于，包括权利要求1-5任一项所述的全光谱荧光粉或权利要求6-8任一项所述的全光谱二极管。
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