WO2020006810A1 - 一种oled显示面板及其封装方法 - Google Patents

一种oled显示面板及其封装方法 Download PDF

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Publication number
WO2020006810A1
WO2020006810A1 PCT/CN2018/099776 CN2018099776W WO2020006810A1 WO 2020006810 A1 WO2020006810 A1 WO 2020006810A1 CN 2018099776 W CN2018099776 W CN 2018099776W WO 2020006810 A1 WO2020006810 A1 WO 2020006810A1
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WIPO (PCT)
Prior art keywords
layer
inorganic material
film transistor
thin film
material film
Prior art date
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Ceased
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PCT/CN2018/099776
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English (en)
French (fr)
Inventor
李雪云
唐岳军
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Wuhan China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to US16/095,361 priority Critical patent/US20200006705A1/en
Publication of WO2020006810A1 publication Critical patent/WO2020006810A1/zh
Anticipated expiration legal-status Critical
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays

Definitions

  • the present invention relates to the technical field of display manufacturing, and in particular, to an OLED display panel and a packaging method thereof.
  • the organic light emitting display generally includes an organic light emitting material having a first electrode, a second electrode, and an intermediate layer between the first electrode and the second electrode.
  • Organic light-emitting displays feature wide viewing angles, high contrast, and fast response.
  • packaging is required.
  • the function of the packaging is to block outside water vapor / oxygen from entering the OLED display and damage its display life.
  • cover packaging and thin film packaging are used on the market.
  • the invention provides an OLED display panel and a packaging method thereof, which can enhance the packaging performance of the OLED display panel, thereby further enhancing the function of blocking external water vapor / oxygen from entering the OLED display panel, thereby further improving the life of the OLED display panel.
  • the present invention provides an OLED display panel, including:
  • An OLED light emitting layer is prepared on the thin film transistor layer, and the OLED light emitting layer includes an OLED light emitting device;
  • An encapsulation layer is prepared on the OLED light-emitting layer, and the encapsulation layer is an encapsulation cover plate or a thin-film encapsulation layer, which includes a plurality of inorganic layers and an organic layer that are alternately stacked;
  • At least one of the inorganic layers in the encapsulation layer is in contact with at least one inorganic material film layer in the OLED light-emitting layer or the thin-film transistor layer through a reserved area to form at least one surrounding the OLED light-emitting device. Reinforced packaging enclosure for packaging OLED display panels.
  • the OLED light-emitting layer includes at least one layer of a first inorganic material film.
  • the non-display area at the periphery of the OLED light-emitting layer is provided with the reserved area.
  • the first inorganic material film layer is exposed.
  • the OLED light-emitting device is disposed on a side of the first inorganic material film layer away from the substrate, and at least one of the inorganic layers in the encapsulation layer passes through the reserved area and the substrate.
  • the first inorganic material film layer is in contact with each other to form the enhanced encapsulation ring.
  • the thin film transistor layer includes at least one second inorganic material film layer, and the reserved area is set at a predetermined position around the edge of the thin film transistor layer, and the reserved area is exposed. There is the second inorganic material film layer.
  • the OLED light emitting device corresponds to a non-reserved area in the reserved area, and at least one of the inorganic layers in the encapsulation layer passes through the reserved area and the second inorganic material.
  • the film is in contact.
  • the thin film transistor layer further includes a thin film transistor, and the thin film transistor is disposed on a side of the second inorganic material film layer away from the substrate, so as to form a boundary between the OLED light emitting device and the substrate.
  • the enhanced package envelope of the thin film transistor is disposed on a side of the second inorganic material film layer away from the substrate, so as to form a boundary between the OLED light emitting device and the substrate.
  • the substrate includes at least a third inorganic material film layer
  • the thin film transistor layer includes a thin film transistor
  • the third inorganic material film layer is at a predetermined position on the periphery of the substrate. It is in contact with the second inorganic material film layer to form the encapsulation enclosing ring surrounding the OLED light emitting device and the thin film transistor.
  • the substrate includes at least one third inorganic material film layer, and the reserved positions of edges of the thin film transistor layer and the OLED light emitting layer corresponding to non-display areas are provided with the reservation. Area, the reserved area is exposed with the third inorganic material film layer; at least one of the inorganic layers in the encapsulation layer is in contact with the third inorganic material film layer through the reserved area.
  • the present invention also provides a packaging method for an OLED display panel.
  • the method includes the following steps:
  • Step S1 a substrate is provided, and a thin film transistor layer and an OLED light emitting layer are sequentially laminated on the substrate to form an OLED display panel to be packaged; wherein a predetermined area of a non-display area on the peripheral edge of the substrate is exposed to the A thin film transistor layer or an inorganic material film layer of the OLED light emitting layer;
  • Step S2 a packaging process is performed to prepare an inorganic layer on the OLED display panel, and the inorganic layer is in contact with the inorganic material film layer of the thin film transistor layer or the OLED light emitting layer through the preset region.
  • a packaging process is performed to prepare an inorganic layer on the OLED display panel, and the inorganic layer is in contact with the inorganic material film layer of the thin film transistor layer or the OLED light emitting layer through the preset region.
  • step S3 a cover plate is encapsulated on the inorganic layer or a thin-film encapsulation layer in which organic layers / inorganic layers are alternately laminated is produced.
  • the invention also provides an OLED display panel, including:
  • An OLED light emitting layer is prepared on the thin film transistor layer, and the OLED light emitting layer includes an OLED light emitting device;
  • An encapsulation layer prepared on the OLED light-emitting layer comprising a plurality of inorganic layers and organic layers arranged alternately and stacked;
  • At least one of the inorganic layers in the encapsulation layer is in contact with at least one inorganic material film layer in the OLED light-emitting layer or the thin-film transistor layer through a reserved area to form at least one surrounding the OLED light-emitting device. Reinforced packaging enclosure for packaging OLED display panels.
  • the OLED light-emitting layer includes at least one layer of a first inorganic material film.
  • the non-display area at the periphery of the OLED light-emitting layer is provided with the reserved area.
  • the first inorganic material film layer is exposed.
  • the OLED light-emitting device is disposed on a side of the first inorganic material film layer away from the substrate, and at least one of the inorganic layers in the encapsulation layer passes through the reserved area and the substrate.
  • the first inorganic material film layer is in contact with each other to form the enhanced encapsulation ring.
  • the thin film transistor layer includes at least one second inorganic material film layer, and the reserved area is set at a predetermined position around the edge of the thin film transistor layer, and the reserved area is exposed. There is the second inorganic material film layer.
  • the OLED light emitting device corresponds to a non-reserved area in the reserved area, and at least one of the inorganic layers in the encapsulation layer passes through the reserved area and the second inorganic material.
  • the film is in contact.
  • the thin film transistor layer further includes a thin film transistor, and the thin film transistor is disposed on a side of the second inorganic material film layer away from the substrate, so as to form a boundary between the OLED light emitting device and the substrate.
  • the enhanced package envelope of the thin film transistor is disposed on a side of the second inorganic material film layer away from the substrate, so as to form a boundary between the OLED light emitting device and the substrate.
  • the substrate includes at least a third inorganic material film layer
  • the thin film transistor layer includes a thin film transistor
  • the third inorganic material film layer is at a predetermined position on the periphery of the substrate. It is in contact with the second inorganic material film layer to form the encapsulation enclosing ring surrounding the OLED light emitting device and the thin film transistor.
  • the substrate includes at least one third inorganic material film layer, and the reserved positions of edges of the thin film transistor layer and the OLED light emitting layer corresponding to non-display areas are provided with the reservation. Area, the reserved area is exposed with the third inorganic material film layer; at least one of the inorganic layers in the encapsulation layer is in contact with the third inorganic material film layer through the reserved area.
  • the beneficial effect of the present invention is that the OLED display panel and the packaging method thereof of the present invention encapsulate the OLED display panel by combining the inorganic layer in the packaging layer and the inorganic layer in the thin film transistor layer to form an "inorganic material enhanced packaging enclosure", or the packaging layer
  • the middle inorganic layer and the inorganic layer in the thin film transistor layer / the inorganic layer in the substrate form an "inorganic material-enhanced encapsulation ring" to encapsulate the OLED display panel.
  • the encapsulation ring of the inorganic material-enhanced package is embedded in the thin film transistor layer and / or the substrate, so it does not increase the width of the display panel frame, and is not easily damaged, increasing its stability.
  • FIG. 1 is a top view of a structure of an OLED display panel according to an embodiment of the present invention
  • FIG. 2 is a schematic cross-sectional view of an edge portion of an OLED display panel according to a first embodiment of the present invention
  • 3A is a schematic cross-sectional view of an edge portion of an OLED display panel according to Embodiment 2 of the present invention.
  • 3B is a schematic cross-sectional view of an edge portion of another OLED display panel provided in Embodiment 2 of the present invention.
  • 3C is a schematic cross-sectional view of another edge portion of an OLED display panel according to Embodiment 2 of the present invention.
  • Figure 4A is a schematic sectional view of an edge portion of an OLED display panel provided in Embodiment 3 of the present invention.
  • FIG. 4B is a schematic cross-sectional view of an edge portion of another OLED display panel according to Embodiment 3 of the present invention.
  • FIG. 5 is a schematic cross-sectional view of an edge portion of an OLED display panel according to a fourth embodiment of the present invention.
  • FIG. 6 is a schematic cross-sectional view of an edge portion of another OLED display panel according to a fourth embodiment of the present invention.
  • FIG. 7 is a flowchart of a packaging method of an OLED display panel according to an embodiment of the present invention.
  • the present invention is directed to the prior art OLED display panel, which has poor packaging performance of the encapsulation layer, which causes external water vapor / oxygen to enter the inside of the OLED display panel, thereby affecting the technical problem of the life of the OLED display panel.
  • This embodiment can solve the problem defect.
  • FIG. 1 a top view of a structure of an OLED display panel according to an embodiment of the present invention is shown.
  • the OLED display panel includes a display area 101, a pad area 102, and a package edge / frame area 103.
  • Figures 2-7 in the following embodiments are cross-sectional views of the OLED display panel along X or Y.
  • the OLED display panel can also be There are multiple X / Y cross sections, and X '/ Y' is an existing packaging method.
  • the X '/ Y' cross section may be an organic layer in a packaging layer and an inorganic layer or a substrate in a thin film transistor layer.
  • the embodiment of the present invention The X '/ Y' cross section may not be provided in China, or it may be provided in some areas; the X '/ Y' cross section is only an example here and is not a limitation.
  • the OLED display panel includes a substrate 201, a thin film transistor layer 202 prepared on the substrate 201, and an OLED light emitting layer prepared on the thin film transistor layer 202.
  • the OLED light emitting layer includes a pixel defining layer 203 and an OLED light emitting device. 206, the pixel defining layer 203 defines a pixel area, and the OLED light-emitting device 206 is located in the pixel area; a packaging layer 207 is prepared on the OLED light-emitting layer, and the packaging layer includes a plurality of inorganic layers arranged alternately and stacked Layer and organic layer.
  • the OLED light-emitting layer includes a first inorganic material film layer, and the OLED light-emitting device 206 is disposed on a side of the first inorganic material film layer away from the substrate 201.
  • the first inorganic material film layer may be It is, but is not limited to, the pixel defining layer 203.
  • a reserved area 204 is set in a non-display area around the periphery of the OLED light emitting layer, and the first inorganic material film layer is exposed in the reserved area 204; that is, when the OLED light emitting device 206 is prepared, Since the cathode layer 205 is generally prepared on the entire surface, the cathode layer 205 in this embodiment is prepared on the surface of the pixel defining layer 203 corresponding to a non-reserved area in the reserved area 204, and the cathode layer 205 is not covered.
  • the reserved area 204 is set in a non-display area around the periphery of the OLED light emitting layer, and the first inorganic material film layer is exposed in the reserved area 204; that is, when the OLED light emitting device 206 is prepared, Since the cathode layer 205 is generally prepared on the entire surface, the cathode layer 205 in this embodiment is prepared on the surface of the pixel defining layer 203 corresponding to a non-re
  • the first inorganic layer 208 of the encapsulation layer 207 is in contact with the pixel defining layer 203 through the reserved area 204 to form an enhanced encapsulation enclosing circle surrounding at least the OLED light emitting device 206 for encapsulating the OLED display panel.
  • the thin film transistor layer 202 shown in the figure takes a commonly used LTPS top-gate TFT structure as an example, but it is not limited.
  • the first inorganic layer 208 serves as a first encapsulating portion of the encapsulating layer 207, and a plurality of second organic / inorganic alternate encapsulating portions 209 are also prepared on the surface.
  • Other inorganic layers in the encapsulation layer 207 may also be in contact with the first inorganic material film layer through the reserved area 204.
  • the reserved area 204 uses the pixel defining layer 203 as a contact layer to contact the first inorganic layer 208.
  • the anode / cathode / auxiliary metal in the OLED light-emitting layer One or more of the layers or other non-metallic inorganic materials are used as the contact layer, which is not limited herein.
  • FIG. 3A it is a schematic cross-sectional view of an edge portion of an OLED display panel provided in Embodiment 2 of the present invention.
  • the OLED display panel includes: a substrate 301; and a thin film transistor layer prepared on the substrate 301.
  • the thin film transistor layer includes a buffer layer, a gate insulating layer, an inter-insulating layer 302, and a through layer that are sequentially stacked on the substrate 301.
  • the thin film transistor layer includes a second inorganic material film layer, and the second inorganic material film layer includes, but is not limited to, the inter-insulating layer 302.
  • a reserved area 303 is set around the periphery of the thin film transistor layer, and the flat layer 309, the pixel defining layer 308, and the OLED light-emitting device 304 are correspondingly disposed in a non-reserved area in the reserved area 303.
  • the second inorganic material film layer is exposed in the reserved area 303, that is, a corresponding portion of the reserved area 303 corresponding to the inter-insulating layer 302 is exposed.
  • the inner surface of the side of the encapsulation layer 305 near the OLED light-emitting device 304 is a first inorganic layer 307, which is used as a first encapsulation portion.
  • the first inorganic layer 307 communicates with the The interlayer insulating layer 302 contacts to form the encapsulation enclosing circle surrounding the OLED light emitting device 304.
  • a surface of the first inorganic layer 307 of the packaging layer 305 is further provided with a second packaging portion 306.
  • the flat layer 309 and the pixel-defining layer 308 are made of organic materials, such as polymethyl methacrylate (PMMA).
  • FIG. 3B it is a schematic cross-sectional view of another edge portion of an OLED display panel provided in Embodiment 2 of the present invention.
  • the difference from FIG. 3A is that the first inorganic layer 307 is used to contact the intervening insulating layer 302 outside the reserved area 303 and further includes the flat layer 309 and the pixel defining layer 308 and The second packaging portion 306 of the packaging layer 305.
  • the second packaging portion 306 may be another layer of a packaging cover or a thin film packaging layer.
  • FIG. 3C it is a schematic cross-sectional view of another edge portion of an OLED display panel provided in Embodiment 2 of the present invention.
  • the difference compared to FIG. 3A is that the first inorganic layer 307 is used to contact the outside of the reserved area 303 of the inter-insulating layer 302 as the second encapsulation portion 306 of the encapsulation layer 305;
  • the buffer layer 311, the gate insulating layer 310, and the inter-insulating layer 302 in the thin film transistor layer are made of inorganic materials, such as SiNx, SiOx, and the like.
  • the first layer on the inner surface of the encapsulation layer 305 is an inorganic layer.
  • the reserved area 303 and the encapsulation layer 305 are reserved.
  • the first inorganic layer 307 is in contact, that is, when the organic material film layer such as the flat layer 309 and the pixel defining layer 308 is manufactured, the reserved area 303 is vacated or has a hole, and when the package is manufactured,
  • the first inorganic layer 307 of the encapsulation layer 305 and the second inorganic material film layer of the thin film transistor layer are in contact with the reinforced encapsulation enclosing circle of the inorganic material in the reserved area 303. .
  • FIG. 4A it is a schematic cross-sectional view of an edge portion of an OLED display panel provided in Embodiment 3 of the present invention.
  • This embodiment is similar to FIG. 3B in the second embodiment, but differs from FIG. 3B in that the encapsulation layer 401 is a thin film encapsulation layer, and includes a first organic layer 402 and a first inorganic layer that are sequentially stacked from the inner surface outward. 403.
  • a reserved area 407 is reserved during the preparation of the first organic layer 402, and the first inorganic layer 403 passes through the reserved area 407 and an insulating layer between the inorganic materials of the thin film transistor layer 406 contacts, the first inorganic layer 403 and the inter-insulating layer 406 form a reinforced encapsulation envelop surrounding the OLED light emitting device 405.
  • FIG. 4B it is a schematic cross-sectional view of another edge portion of an OLED display panel provided in Embodiment 3 of the present invention.
  • This embodiment is similar to FIG. 3C in the second embodiment, but differs from FIG. 3C in that this embodiment is an inorganic layer 408 in the middle layer portion of the encapsulation layer, a thin film transistor layer intermediate insulating layer 406, a gate insulating layer 409, and a buffer layer 410 is in contact with the reserved area 407 to form an enhanced encapsulation encapsulation ring of an inorganic material surrounding the thin film transistor 411 and the OLED display device 405.
  • FIG. 5 it is a schematic cross-sectional view of an edge portion of an OLED display panel according to a fourth embodiment of the present invention.
  • the substrate of the OLED display panel is a flexible substrate or a thin film substrate
  • the substrate material is an inorganic / organic multilayer stack structure
  • the substrate is shown in the figure.
  • the third inorganic material film layer 501 is in contact with the second inorganic material film layer of the thin film transistor layer prepared on the substrate surface in the reserved area 502, wherein the second inorganic material film layer includes a buffer layer. 503, the gate insulating layer 504 and the inter-insulating layer 505, so as to form an encapsulation enclosing circle surrounding the OLED light-emitting device and the thin film transistor.
  • the inorganic layer 501 may extend or not extend to the cutting edge in the substrate. The cutting edge is such that the outer edge of the substrate is made of organic material.
  • the OLED display panel of this embodiment may also adopt two other structures as provided in the above-mentioned second embodiment to form a reinforced encapsulation enclosure consisting of an inorganic material in a packaging layer, a thin film transistor layer, and a substrate.
  • the inorganic layer in the encapsulation layer may be a first layer, an intermediate layer, and an inorganic layer on a side remote from the substrate, or the inorganic layer in the encapsulation encapsulation including at least two of the encapsulation layers.
  • the two inorganic layers 601 in the encapsulation layer pass through the reserved area and the second inorganic material film layer 602 in the thin film transistor layer and the third inorganic material film layer in the substrate.
  • 603 forms an enhanced encapsulation enveloping ring that surrounds the entire OLED light emitting device and the thin film transistor.
  • the reserved area in the schematic diagram of the present invention uses the buffer layer, the gate insulation layer, and the inter-insulation layer in the thin film transistor layer as the contact layer, but the contact layer is not limited thereto, such as the second inorganic material film in the reserved area.
  • the layer can also be one or more of the metals made in the same layer as the scan line metal / data line of the thin film transistor layer.
  • the first inorganic material film layer / the second inorganic material film layer in contact with the reserved area may also be one or more metals made on the same layer as the scanning line metal / data line / anode / cathode metal layer. This type is used as the contact layer together with the buffer layer, the gate insulating layer, and the interlayer insulating layer, but the schematic diagram of the embodiment of the present invention is not shown.
  • the present invention also provides a packaging method for an OLED display panel. As shown in FIG. 7, the method includes the following steps:
  • Step S1 a substrate is provided, and a thin film transistor layer and an OLED light emitting layer are sequentially stacked on the substrate to form an OLED display panel to be packaged; wherein a predetermined area of a non-display area on the periphery of the substrate is exposed to the substrate.
  • Step S2 a packaging process is performed to prepare an inorganic layer on the OLED display panel, and the inorganic layer is in contact with the inorganic material film layer of the thin film transistor layer or the OLED light emitting layer through the preset region.
  • a packaging process is performed to prepare an inorganic layer on the OLED display panel, and the inorganic layer is in contact with the inorganic material film layer of the thin film transistor layer or the OLED light emitting layer through the preset region.
  • step S3 a cover plate is encapsulated on the inorganic layer or a thin-film encapsulation layer in which organic layers / inorganic layers are alternately laminated is produced.
  • the OLED display panel structure of the present invention includes a substrate, a thin film transistor layer, an OLED light emitting layer, and a packaging layer.
  • the substrate may be any suitable insulating material, such as glass, polyimide (PI), and polycarbonate (PC). ), Polyethersulfone (PES), polyethylene terephthalate (PET), etc.
  • the thin film transistor layer includes a thin film transistor array that controls the OLED light emitting layer to emit light, circuit signal lines, and traces.
  • the OLED light-emitting layer includes an anode, a light-emitting material layer, and a cathode.
  • the packaging layer includes one or two of a packaging cover plate and a thin film packaging layer.
  • the thin film packaging layer may be a packaging film having a multilayer thin film structure obtained by sequentially depositing an inorganic material and coating an organic material, wherein
  • the inorganic material may protect the OLED device from moisture, foreign substances or pollutants, and the organic material may help perform planarization and defect filling, and the organic material may be, but is not limited to, including a conventional polymer (PMMA , PS), phenol-based polymer derivatives, propylene-based polymers, imine-based polymers, aryl ether-based polymers, amide-based polymers, fluorine-based polymers, p-xylyl-based polymers, and the like.
  • PMMA polymer
  • PS phenol-based polymer derivatives
  • propylene-based polymers propylene-based polymers
  • imine-based polymers aryl ether-based polymers
  • amide-based polymers amide-based polymers
  • fluorine-based polymers p-xylyl-based polymers, and the like.
  • the inorganic material may include, but is not limited to, SiO2, SiNx, SiON, Al2O3, TiO2, Ta2O5, HfO2, ZrO2, etc., and the order in which the inorganic material and the organic material are formed is variable.
  • the encapsulation layer may have a multilayer structure including at least one inorganic layer and at least one organic layer.
  • the OLED display panel further includes a layer or structure including but not described in the substrate / thin-film transistor layer / OLED light-emitting layer / encapsulation layer, and the OLED display panel further includes the substrate / thin-film transistor layer / OLED light-emitting layer / package described above. Layers or structures that were never contained in the layer, such as circular polarizers that resist reflection of ambient light.
  • the OLED display panel and the packaging method thereof of the present invention are used to package an OLED display panel by combining the inorganic layer in the packaging layer and the inorganic layer in the thin-film transistor layer to form an "inorganic material-enhanced enclosing ring", or to combine the inorganic layer in the packaging layer with the thin-film transistor.
  • the inorganic layer in the layer / inorganic layer in the substrate constitutes an "inorganic material enhanced packaging envelope" to encapsulate the OLED display panel.
  • the encapsulation ring of the inorganic material-enhanced package is embedded in the thin film transistor layer or / and the substrate, so it does not increase the width of the display panel frame, and is not easily damaged, increasing its stability.

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Abstract

本发明提供一种OLED显示面板及其封装方法，包括制备于基板上的薄膜晶体管层、OLED发光层、封装层；该OLED发光层包括OLED发光器件；该封装层包括层叠交替设置的无机层与有机层，其中，至少一所述无机层通过预留区域与所述OLED发光层或所述薄膜晶体管层中的至少一无机材料膜层接触，形成至少包围所述OLED发光器件的增强封装包围圈。

Description

一种OLED显示面板及其封装方法 技术领域
本发明涉及显示制造技术领域，尤其涉及一种OLED显示面板及其封装方法。
 背景技术
有机发光显示器通常包括具有第一电极、第二电极以及在第一电极和第二电极之间的中间层的有机发光材料。有机发光显示器具有宽视角、高对比度和快速响应等特点。近来针对制造更纤薄的显示设备已经进行了研究。在OLED显示器制造中需要进行封装，封装的功能是阻挡外界的水汽/氧气进入OLED显示器内损坏其显示寿命。目前市面上采用盖板封装和薄膜封装的方式，但在特定环境下如高温高湿，或者在曲面状态下，依然会存在水汽/氧气入侵器件内部的情况，随着对OLED显示器件的要求越来越高，如何增加其防水汽/氧气性能，以及增加其使用寿命成为时下关注的重点。
因此，有必要提供一种OLED显示面板及其封装方法，以解决现有技术所存在的问题。
 技术问题
本发明提供一种OLED显示面板及其封装方法，能够增强OLED显示面板的封装性能，从而进一步增强阻挡外界的水汽/氧气进入OLED显示面板的作用，进而可以提升OLED显示面板的寿命。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种OLED显示面板，包括：
基板；
薄膜晶体管层，制备于所述基板上；
OLED发光层，制备于所述薄膜晶体管层上，所述OLED发光层包括OLED发光器件；
封装层，制备于所述OLED发光层上，所述封装层为封装盖板或薄膜封装层，其包括层叠交替设置的多层无机层与有机层；
其中，所述封装层中的至少一所述无机层通过预留区域与所述OLED发光层或所述薄膜晶体管层中的至少一无机材料膜层接触，以形成至少包围所述OLED发光器件的增强封装包围圈，用于封装OLED显示面板。
根据本发明一优选实施例，所述OLED发光层中至少包括一层第一无机材料膜层，所述OLED发光层四周边缘的非显示区域设置有所述预留区域，在所述预留区域露出有所述第一无机材料膜层。
根据本发明一优选实施例，所述OLED发光器件设置于所述第一无机材料膜层远离所述基板的一侧，所述封装层中至少一所述无机层通过所述预留区域与所述第一无机材料膜层接触，以形成所述增强封装包围圈。
根据本发明一优选实施例，所述薄膜晶体管层中至少包括一层第二无机材料膜层，所述薄膜晶体管层四周边缘的预设位置设置有所述预留区域，所述预留区域露出有所述第二无机材料膜层。
根据本发明一优选实施例，所述OLED发光器件对应所述预留区域内的非预留区域，所述封装层中至少一所述无机层通过所述预留区域与所述第二无机材料膜层接触。
根据本发明一优选实施例，所述薄膜晶体管层还包括薄膜晶体管，所述薄膜晶体管设置于所述第二无机材料膜层远离所述基板的一侧，以形成包围所述OLED发光器件与所述薄膜晶体管的所述增强封装包围圈。
根据本发明一优选实施例，所述基板中至少包括一层第三无机材料膜层，所述薄膜晶体管层包括薄膜晶体管，所述第三无机材料膜层在所述基板四周边缘的预设位置与所述第二无机材料膜层接触，以形成包围所述OLED发光器件与所述薄膜晶体管的所述增强封装包围圈。
根据本发明一优选实施例，所述基板中至少包括一层第三无机材料膜层，所述薄膜晶体管层及所述OLED发光层的边缘对应非显示区域的预设位置设置有所述预留区域，所述预留区域露出有所述第三无机材料膜层；所述封装层中至少一所述无机层通过所述预留区域与所述第三无机材料膜层接触。
本发明还提供一种OLED显示面板的封装方法，所述方法包括以下步骤：
步骤S1、提供一基板，在所述基板上依次层叠制备薄膜晶体管层、OLED发光层，形成待封装的OLED显示面板；其中，在所述基板四周边缘的非显示区域的预设区域露出所述薄膜晶体管层或所述OLED发光层的无机材料膜层；
步骤S2、进行封装制程，在所述OLED显示面板上制备一层无机层，所述无机层通过所述预设区域与所述薄膜晶体管层或所述OLED发光层的所述无机材料膜层接触，以形成至少包围所述OLED发光层中的OLED发光器件的增强封装包围圈；
步骤S3、在所述无机层上进行盖板封装或者制作有机层/无机层层叠交替的薄膜封装层。
本发明还提供一种OLED显示面板，包括：
基板；
薄膜晶体管层，制备于所述基板上；
OLED发光层，制备于所述薄膜晶体管层上，所述OLED发光层包括OLED发光器件；
封装层，制备于所述OLED发光层上，所述封装层包括层叠交替设置的多层无机层与有机层；
其中，所述封装层中的至少一所述无机层通过预留区域与所述OLED发光层或所述薄膜晶体管层中的至少一无机材料膜层接触，以形成至少包围所述OLED发光器件的增强封装包围圈，用于封装OLED显示面板。
根据本发明一优选实施例，所述OLED发光层中至少包括一层第一无机材料膜层，所述OLED发光层四周边缘的非显示区域设置有所述预留区域，在所述预留区域露出有所述第一无机材料膜层。
根据本发明一优选实施例，所述OLED发光器件设置于所述第一无机材料膜层远离所述基板的一侧，所述封装层中至少一所述无机层通过所述预留区域与所述第一无机材料膜层接触，以形成所述增强封装包围圈。
根据本发明一优选实施例，所述薄膜晶体管层中至少包括一层第二无机材料膜层，所述薄膜晶体管层四周边缘的预设位置设置有所述预留区域，所述预留区域露出有所述第二无机材料膜层。
根据本发明一优选实施例，所述OLED发光器件对应所述预留区域内的非预留区域，所述封装层中至少一所述无机层通过所述预留区域与所述第二无机材料膜层接触。
根据本发明一优选实施例，所述薄膜晶体管层还包括薄膜晶体管，所述薄膜晶体管设置于所述第二无机材料膜层远离所述基板的一侧，以形成包围所述OLED发光器件与所述薄膜晶体管的所述增强封装包围圈。
根据本发明一优选实施例，所述基板中至少包括一层第三无机材料膜层，所述薄膜晶体管层包括薄膜晶体管，所述第三无机材料膜层在所述基板四周边缘的预设位置与所述第二无机材料膜层接触，以形成包围所述OLED发光器件与所述薄膜晶体管的所述增强封装包围圈。
根据本发明一优选实施例，所述基板中至少包括一层第三无机材料膜层，所述薄膜晶体管层及所述OLED发光层的边缘对应非显示区域的预设位置设置有所述预留区域，所述预留区域露出有所述第三无机材料膜层；所述封装层中至少一所述无机层通过所述预留区域与所述第三无机材料膜层接触。
 有益效果
本发明的有益效果为：本发明的OLED显示面板及其封装方法，通过将封装层中无机层与薄膜晶体管层中无机层组成“无机材料增强封装包围圈”以封装OLED显示面板，或将封装层中无机层同时与薄膜晶体管层中无机层／基板中无机层组成“无机材料增强封装包围圈”以封装OLED显示面板。该无机材料增强封装包围圈由于嵌入薄膜晶体管层和/或基板内部，因此不会增加显示面板边框宽度，而且不易被损坏，增加其稳定性，由于在内部接触到的水汽/氧气有限，更容易达到增强OLED显示面板的封装性能的目的；同时利用了制程中其他无机层结构，因此节省成本；本方案可达到增强阻挡外界的水汽/氧气进入OLED显示面板的作用，从而可以提升OLED显示面板寿命的有益效果。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明一实施例提供的OLED显示面板结构俯视图；
图2为本发明实施例一提供的OLED显示面板边缘部分截面示意图；
图3A为本发明实施例二提供的一种OLED显示面板边缘部分截面示意图；
图3B为本发明实施例二提供的另一种OLED显示面板边缘部分截面示意图；
图3C为本发明实施例二提供的又一种OLED显示面板边缘部分截面示意图；
图4A为本发明实施例三提供的一种OLED显示面板边缘部分截面示意图;
图4B为本发明实施例三提供的另一种OLED显示面板边缘部分截面示意图；
图5为本发明实施例四提供的一种OLED显示面板边缘部分截面示意图；
图6为本发明实施例四提供的另一种OLED显示面板边缘部分截面示意图；
图7为本发明实施例提供的OLED显示面板的封装方法流程图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。在图中，结构相似的单元是用以相同标号表示。
本发明针对现有技术的OLED显示面板，存在封装层的封装性能欠佳，从而导致外界的水汽/氧气进入OLED显示面板内部，进而影响OLED显示面板的寿命的技术问题，本实施例能够解决该缺陷。
参阅图1，为本发明一实施例提供的OLED显示面板结构俯视图。该OLED显示面板包含显示区101、焊盘区102、封装边缘/边框区103，下列实施例中的图2~7为该OLED显示面板沿X或者Y的断面图，而该OLED显示面板还可以是多个X／Y断面，X’/Y’为现有封装方法，例如在X’/Y’断面可以是封装层中有机层与薄膜晶体管层中无机层或基板接触，当然本发明实施例中也可以不具备X’/Y’断面，或者部分区域具备；此处对X’/Y’断面仅为举例，不作为限定。
参阅图2，为本发明实施例一提供的OLED显示面板边缘部分截面示意图。该OLED显示面板包括：基板201；薄膜晶体管层202，制备于所述基板201上；OLED发光层，制备于所述薄膜晶体管层202上，所述OLED发光层包括像素界定层203 以及OLED发光器件206，所述像素界定层203定义出像素区域，所述OLED发光器件206位于所述像素区域；封装层207，制备于所述OLED发光层上，所述封装层包括层叠交替设置的多层无机层与有机层。其中，所述OLED发光层中包括第一无机材料膜层，所述OLED发光器件206设置于所述第一无机材料膜层远离所述基板201的一侧，所述第一无机材料膜层可以为但不限定于所述像素界定层203。所述OLED发光层四周边缘的非显示区域设置有预留区域204，在所述预留区域204露出有所述第一无机材料膜层；也就是说，在制备所述OLED发光器件206时，由于阴极层205通常采用整面制备，而本实施例中所述阴极层205对应所述预留区域204内的非预留区域制备于所述像素界定层203表面，所述阴极层205不覆盖所述预留区域204。这样，所述封装层207的第一层无机层208通过所述预留区域204与所述像素界定层203接触，以形成至少包围所述OLED发光器件206的增强封装包围圈，用于封装所述OLED显示面板。
另外，图中所述薄膜晶体管层202以常用LTPS顶栅型TFT结构作为示例，但并不进行限定。所述第一层无机层208作为所述封装层207的第一封装部，其表面还制备有多层有机/无机交替的第二封装部209。所述封装层207中的其他无机层也可通过所述预留区域204与所述第一无机材料膜层接触。本实施例中所述预留区域204以所述像素界定层203作为接触层与所述第一层无机层208接触，其他实施例中，所述OLED发光层中阳极／阴极／辅助电极等金属层或者其他非金属无机材料中一种或几种作为接触层，此处不做限定。
如图3A所示，为本发明实施例二提供的一种OLED显示面板边缘部分截面示意图。该OLED显示面板包括：基板301；薄膜晶体管层，制备于所述基板301上，所述薄膜晶体管层包括在所述基板301上依次层叠设置的缓冲层、栅绝缘层、间绝缘层302以及贯穿所述栅绝缘层与所述间绝缘层302的薄膜晶体管；平坦层309，制备于所述薄膜晶体管层上；像素界定层308，制备于所述平坦层309上，所述像素界定层308定义出像素区域；OLED发光器件304，对应所述像素区域制备于所述像素界定层308表面；封装层305，设置于所述OLED发光器件304表面，用于封装所述OLED显示面板。所述薄膜晶体管层中包括第二无机材料膜层，所述第二无机材料膜层包括但不限于所述间绝缘层302。所述薄膜晶体管层四周边缘设置有预留区域303，所述平坦层309、所述像素界定层308以及所述OLED发光器件304对应设置于所述预留区域303内的非预留区域。在所述预留区域303露出有所述第二无机材料膜层，也就是说，在所述预留区域303对应所述间绝缘层302的相应部分露出。所述封装层305靠近所述OLED发光器件304一侧的内表面为第一层无机层307，用作第一封装部，所述第一层无机层307通过所述预留区域303与所述间绝缘层302接触，形成包围所述OLED发光器件304的所述增强封装包围圈。所述封装层305的所述第一层无机层307的表面还制备有第二封装部306。本实施例中所述平坦层309、所述像素限定层308为有机材料制作，例如聚甲基丙烯酸甲酯（PMMA）等。
如图3B所示，为本发明实施例二提供的另一种OLED显示面板边缘部分截面示意图。相较于图3A的区别在于：所述第一层无机层307用来接触所述间绝缘层302的所述预留区域303的外侧还具有所述平坦层309与所述像素界定层308以及所述封装层305的所述第二封装部306。该第二封装部306可以为封装盖板或薄膜封装层的其他层。
如图3C所示，为本发明实施例二提供的又一种OLED显示面板边缘部分截面示意图。相较于图3A的区别在于：所述第一层无机层307用来接触所述间绝缘层302的所述预留区域303的外侧为所述封装层305的所述第二封装部306；所述薄膜晶体管层中所述缓冲层311、所述栅极绝缘层310、所述间绝缘层302均为无机材料制作，例如SiNx、SiOx等。
实施例二中，所述封装层305内表面的第一层为无机层，在所述薄膜晶体管层包含的各膜层和结构制作中留出所述预留区域303与所述封装层305的所述第一层无机层307接触，即在所述平坦层309、所述像素界定层308等有机材料膜层制作时在所述预留区域303空出或具有挖孔，在封装制作时，此实施例所述封装层305的所述第一层无机层307与所述薄膜晶体管层中的所述第二无机材料膜层在所述预留区域303接触组成无机材料的所述增强封装包围圈。
如图4A所示，为本发明实施例三提供的一种OLED显示面板边缘部分截面示意图。本实施例与上述实施例二中图3B相似，但与图3B的区别在于：封装层401为薄膜封装层，包括由内表面向外依次层叠的第一层有机层402、第一层无机层403、其他封装膜层404；所述第一层有机层402制备时留出预留区域407，所述第一层无机层403通过所述预留区域407与薄膜晶体管层的无机材料间绝缘层406接触，所述第一层无机层403与所述间绝缘层406形成包围OLED发光器件405的增强封装包围圈。
如图4B所示，为本发明实施例三提供的另一种OLED显示面板边缘部分截面示意图。本实施例与上述实施例二中图3C相似，但与图3C的区别在于：本实施例为封装层内中层部分的无机层408与薄膜晶体管层中间绝缘层406、栅绝缘层409以及缓冲层410在所述预留区域407接触，组成包围薄膜晶体管411及所述OLED显示器件405的无机材料的增强封装包围圈。
如图5所示，为本发明实施例四提供的一种OLED显示面板边缘部分截面示意图。本实施例相较于上述实施例二中图3C的区别在于：该OLED显示面板的基板为柔性基底或者薄膜基底，所述基板材料为无机/有机的多层堆叠结构，图示为所述基板中包含的一第三无机材料膜层501，所述基板四周边缘预设位置设置有预留区域502，所述预留区域502通过挖孔或其他形式露出所述第三无机材料膜层501，所述第三无机材料膜层501在所述预留区域502与制备于所述基板表面的薄膜晶体管层的所述第二无机材料膜层接触，其中所述第二无机材料膜层包括缓冲层503、栅绝缘层504及间绝缘层505，从而形成包围所述OLED发光器件与所述薄膜晶体管的增强封装包围圈，另外在基底中无机层501 可以延伸或者不延伸至切割边缘，当不延伸至切割边缘使，基底外侧边缘为有机材料。
另外，本实施例的所述OLED显示面板还可采用如上述实施例二中提供的另外两种结构，形成由封装层、薄膜晶体管层以及基板三者中的无机材料组成的增强封装包围圈。其中，所述封装层中的无机层可以为第一层、中间层以及远离基板一侧的无机层，或者形成所述增强封装包围圈的包括至少两层所述封装层中的所述无机层。如图6所示，所述封装层中的两层所述无机层601通过预留区域与所述薄膜晶体管层中的第二无机材料膜层602以及所述基板中的第三无机材料膜层603形成包裹整个OLED发光器件与薄膜晶体管的增强封装包围圈。
本发明示意图所述预留区域以薄膜晶体管层中的缓冲层、栅绝缘层、间绝缘层作为接触层，但是接触层并不限于此，例如所述预留区域的所述第二无机材料膜层还可以为薄膜晶体管层的扫描线金属／数据线等金属层同层制作的金属中一种或几种。例如所述预留区域接触的所述第一无机材料膜层/所述第二无机材料膜层还可以为扫描线金属／数据线／阳极／阴极等金属层同层制作的金属一种或几种与缓冲层、栅极绝缘层、层间绝缘层一起作为接触层，而本发明实施例示意图未示出。
本发明还提供一种OLED显示面板的封装方法，如图7所示，所述方法包括以下步骤：
步骤S1、提供一基板，在所述基板上依次层叠制备薄膜晶体管层、OLED发光层，形成待封装的OLED显示面板；其中，在所述基板四周边缘的非显示区域的预设区域露出所述薄膜晶体管层或所述OLED发光层的无机材料膜层；
步骤S2、进行封装制程，在所述OLED显示面板上制备一层无机层，所述无机层通过所述预设区域与所述薄膜晶体管层或所述OLED发光层的所述无机材料膜层接触，以形成至少包围所述OLED发光层中的OLED发光器件的增强封装包围圈；
步骤S3、在所述无机层上进行盖板封装或者制作有机层/无机层层叠交替的薄膜封装层。
本发明的OLED显示面板结构包括基板、薄膜晶体管层、OLED发光层以及封装层四结构，所述基板可以为任意合适的绝缘材料，例如玻璃、聚酰亚胺(PI)、聚碳酸酯(PC)、聚醚砜(PES)、聚对苯二甲酸乙二醇酯 (PET)等。所述薄膜晶体管层包含控制所述OLED发光层进行发光的薄膜晶体管阵列、电路信号线以及走线等。所述OLED发光层包含阳极、发光材料层以及阴极。所述封装层包括封装盖板和薄膜封装层中的一种或者两种，所述薄膜封装层可以是通过依次沉积无机材料和涂覆有机材料而获得的具有多层薄膜结构的封装薄膜，其中所述无机材料可以保护OLED器件不受水分、外部物质或污染物干扰，并且所述有机材料可以有助于执行平坦化和缺陷填充，所述有机材料可以是但不限于包括传统聚合物(PMMA，PS)、苯酚基的聚合衍生物、丙烯基聚合物、亚胺基聚合物、芳醚基聚合物、酰胺基聚合物、氟基聚合物、对二甲苯基聚合物等。所述无机材料可以是但不限于包括SiO2、SiNx、SiON、Al2O3、TiO2、Ta2O5、HfO2、ZrO2等，同时所述无机材料和所述有机材料形成的顺序是可变的。可替代地，所述封装层可以具有包括至少一个无机层和至少一个有机层的多层结构。所述OLED显示面板还包含上述基板／薄膜晶体管层／OLED发光层／封装层含有但并未描述的层或结构，所述OLED显示面板还包含上述的基板／薄膜晶体管层／OLED发光层／封装层未曾含有的层或结构，例如抗环境光反射的圆偏光片等。
本发明的OLED显示面板及其封装方法，通过将封装层中无机层与薄膜晶体管层中无机层组成“无机材料增强封装包围圈”以封装OLED显示面板，或将封装层中无机层同时与薄膜晶体管层中无机层／基板中无机层组成“无机材料增强封装包围圈”以封装OLED显示面板。该无机材料增强封装包围圈由于嵌入薄膜晶体管层或/和基板内部，因此不会增加显示面板边框宽度，而且不易被损坏，增加其稳定性，由于在内部接触到的水汽/氧气有限，更容易达到增强OLED显示面板的封装性能的目的；同时利用了制程中其他无机层结构，因此节省成本；本方案可达到增强阻挡外界的水汽/氧气进入OLED显示面板的作用，从而可以提升OLED显示面板寿命的有益效果。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (17)

  1. 一种OLED显示面板，其中，包括：
    基板；
    薄膜晶体管层，制备于所述基板上；
    OLED发光层，制备于所述薄膜晶体管层上，所述OLED发光层包括OLED发光器件；
    封装层，制备于所述OLED发光层上，所述封装层为封装盖板或薄膜封装层，其包括层叠交替设置的多层无机层与有机层；
    其中，所述封装层中的至少一所述无机层通过预留区域与所述OLED发光层或所述薄膜晶体管层中的至少一无机材料膜层接触，以形成至少包围所述OLED发光器件的增强封装包围圈，用于封装OLED显示面板。
  2. 根据权利要求1所述的OLED显示面板，其中，所述OLED发光层中至少包括一层第一无机材料膜层，所述OLED发光层四周边缘的非显示区域设置有所述预留区域，在所述预留区域露出有所述第一无机材料膜层。
  3. 根据权利要求2所述的OLED显示面板，其中，所述OLED发光器件设置于所述第一无机材料膜层远离所述基板的一侧，所述封装层中至少一所述无机层通过所述预留区域与所述第一无机材料膜层接触，以形成所述增强封装包围圈。
  4. 根据权利要求1所述的OLED显示面板，其中，所述薄膜晶体管层中至少包括一层第二无机材料膜层，所述薄膜晶体管层四周边缘的预设位置设置有所述预留区域，所述预留区域露出有所述第二无机材料膜层。
  5. 根据权利要求4所述的OLED显示面板，其中，所述OLED发光器件对应所述预留区域内的非预留区域，所述封装层中至少一所述无机层通过所述预留区域与所述第二无机材料膜层接触。
  6. 根据权利要求5所述的OLED显示面板，其中，所述薄膜晶体管层还包括薄膜晶体管，所述薄膜晶体管设置于所述第二无机材料膜层远离所述基板的一侧，以形成包围所述OLED发光器件与所述薄膜晶体管的所述增强封装包围圈。
  7. 根据权利要求5所述的OLED显示面板，其中，所述基板中至少包括一层第三无机材料膜层，所述薄膜晶体管层包括薄膜晶体管，所述第三无机材料膜层在所述基板四周边缘的预设位置与所述第二无机材料膜层接触，以形成包围所述OLED发光器件与所述薄膜晶体管的所述增强封装包围圈。
  8. 根据权利要求1所述的OLED显示面板，其中，所述基板中至少包括一层第三无机材料膜层，所述薄膜晶体管层及所述OLED发光层的边缘对应非显示区域的预设位置设置有所述预留区域，所述预留区域露出有所述第三无机材料膜层；所述封装层中至少一所述无机层通过所述预留区域与所述第三无机材料膜层接触。
  9. 一种OLED显示面板的封装方法，其中，所述方法包括以下步骤：
    步骤S1、提供一基板，在所述基板上依次层叠制备薄膜晶体管层、OLED发光层，形成待封装的OLED显示面板；其中，在所述基板四周边缘的非显示区域的预设区域露出所述薄膜晶体管层或所述OLED发光层的无机材料膜层；
    步骤S2、进行封装制程，在所述OLED显示面板上制备一层无机层，所述无机层通过所述预设区域与所述薄膜晶体管层或所述OLED发光层的所述无机材料膜层接触，以形成至少包围所述OLED发光层中的OLED发光器件的增强封装包围圈；
    步骤S3、在所述无机层上进行盖板封装或者制作有机层/无机层层叠交替的薄膜封装层。
  10. 一种OLED显示面板，其中，包括：
    基板；
    薄膜晶体管层，制备于所述基板上；
    OLED发光层，制备于所述薄膜晶体管层上，所述OLED发光层包括OLED发光器件；
    封装层，制备于所述OLED发光层上，所述封装层包括层叠交替设置的多层无机层与有机层；
    其中，所述封装层中的至少一所述无机层通过预留区域与所述OLED发光层或所述薄膜晶体管层中的至少一无机材料膜层接触，以形成至少包围所述OLED发光器件的增强封装包围圈，用于封装OLED显示面板。
  11. 根据权利要求10所述的OLED显示面板，其中，所述OLED发光层中至少包括一层第一无机材料膜层，所述OLED发光层四周边缘的非显示区域设置有所述预留区域，在所述预留区域露出有所述第一无机材料膜层。
  12. 根据权利要求11所述的OLED显示面板，其中，所述OLED发光器件设置于所述第一无机材料膜层远离所述基板的一侧，所述封装层中至少一所述无机层通过所述预留区域与所述第一无机材料膜层接触，以形成所述增强封装包围圈。
  13. 根据权利要求10所述的OLED显示面板，其中，所述薄膜晶体管层中至少包括一层第二无机材料膜层，所述薄膜晶体管层四周边缘的预设位置设置有所述预留区域，所述预留区域露出有所述第二无机材料膜层。
  14. 根据权利要求13所述的OLED显示面板，其中，所述OLED发光器件对应所述预留区域内的非预留区域，所述封装层中至少一所述无机层通过所述预留区域与所述第二无机材料膜层接触。
  15. 根据权利要求14所述的OLED显示面板，其中，所述薄膜晶体管层还包括薄膜晶体管，所述薄膜晶体管设置于所述第二无机材料膜层远离所述基板的一侧，以形成包围所述OLED发光器件与所述薄膜晶体管的所述增强封装包围圈。
  16. 根据权利要求14所述的OLED显示面板，其中，所述基板中至少包括一层第三无机材料膜层，所述薄膜晶体管层包括薄膜晶体管，所述第三无机材料膜层在所述基板四周边缘的预设位置与所述第二无机材料膜层接触，以形成包围所述OLED发光器件与所述薄膜晶体管的所述增强封装包围圈。
  17. 根据权利要求10所述的OLED显示面板，其中，所述基板中至少包括一层第三无机材料膜层，所述薄膜晶体管层及所述OLED发光层的边缘对应非显示区域的预设位置设置有所述预留区域，所述预留区域露出有所述第三无机材料膜层；所述封装层中至少一所述无机层通过所述预留区域与所述第三无机材料膜层接触。
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