WO2019205305A1 - 柔性oled显示面板及其制备方法、显示装置 - Google Patents

柔性oled显示面板及其制备方法、显示装置 Download PDF

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WO2019205305A1
WO2019205305A1 PCT/CN2018/096231 CN2018096231W WO2019205305A1 WO 2019205305 A1 WO2019205305 A1 WO 2019205305A1 CN 2018096231 W CN2018096231 W CN 2018096231W WO 2019205305 A1 WO2019205305 A1 WO 2019205305A1
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layer
thin film
display panel
oled display
oxygen barrier
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PCT/CN2018/096231
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English (en)
French (fr)
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许杰
孙涛
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武汉华星光电半导体显示技术有限公司
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Priority to US16/084,913 priority Critical patent/US10998522B2/en
Publication of WO2019205305A1 publication Critical patent/WO2019205305A1/zh

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • H10K77/111Flexible substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/124Insulating layers formed between TFT elements and OLED elements
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80Constructional details
    • H10K59/87Passivation; Containers; Encapsulations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301Details of OLEDs
    • H10K2102/311Flexible OLED
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/84Passivation; Containers; Encapsulations
    • H10K50/844Encapsulations
    • H10K50/8445Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/122Pixel-defining structures or layers, e.g. banks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Definitions

  • the present invention relates to the field of display technologies, and in particular, to a flexible OLED display panel and a method for fabricating the same, and to a display device including the flexible OLED display panel.
  • OLED display panels have the advantages of self-luminous, high contrast, thin thickness, wide viewing angle and fast response speed. They are representative of the new generation of flat display technology and are increasingly being accepted by the industry. Admired. Flexible OLED display panels are an important development trend among them.
  • the flexible OLED display panel not only can be thinner and lighter in volume, but also can reduce power consumption, thereby helping to improve the endurance of the corresponding product. At the same time, due to the flexibility and flexibility of the flexible OLED display panel, it is also more durable than ordinary hard display panels. Flexible OLED display panels can be widely used in various products with display functions, such as tablet computers, televisions, mobile terminals, and various types of wearable devices.
  • the present invention provides a flexible OLED display panel and a method of fabricating the same to improve the stress release capability of a flexible OLED display panel when it is bent.
  • a flexible OLED display panel comprising: a flexible substrate, a pixel unit disposed on the flexible substrate, and a thin film encapsulation layer disposed on the pixel unit; wherein the flexible substrate is provided with a water oxygen barrier layer
  • the pixel unit is located on the water-oxygen barrier layer, and a spacer wall is disposed between any two adjacent pixel units, and the spacer wall and the water-oxygen barrier layer are integrally formed;
  • the spacer wall extends from the water oxygen barrier layer to the thin film encapsulation layer in a thickness direction of the flexible OLED display panel.
  • the thin film encapsulation layer comprises an organic thin film layer and an inorganic thin film layer which are alternately laminated, and the spacer wall is embedded in the thin film encapsulation layer.
  • the material of the water oxygen barrier layer and the spacer wall is an organic material.
  • the longitudinal cross section of the spacer wall has a trapezoidal shape.
  • the slope angle of the side of the spacer wall is ⁇ , and 80° ⁇ 90°.
  • the pixel unit includes a thin film transistor and an organic light emitting diode electrically connected to each other, and the thin film transistor is formed on the water and oxygen barrier layer, and the organic light emitting diode is located on the thin film transistor.
  • the thin film transistor includes: an active layer formed on the water and oxygen barrier layer; a gate insulating layer overlying the active layer; a gate electrode formed on the gate insulating layer; An interlayer dielectric layer overlying the gate electrode; a source electrode and a drain electrode formed on the interlayer dielectric layer; and a planar layer overlying the source electrode and the drain electrode.
  • the organic light emitting diode includes: a first electrode formed on the thin film transistor and electrically connected to the thin film transistor; a pixel defining layer disposed around the first electrode; formed at the first electrode An organic light-emitting layer; a second electrode formed on the organic light-emitting layer.
  • the present invention also provides a method of fabricating a flexible OLED display panel as described above, comprising:
  • Another aspect of the present invention is to provide a display device including a driving unit and a flexible OLED display panel as described above, the driving unit providing a driving signal to the flexible OLED display panel to enable the flexible OLED display panel Display images.
  • the flexible OLED display panel and the display device provided by the embodiments of the present invention are provided with a spacer wall between any two adjacent pixel units, one end of the spacer wall is connected to the water oxygen barrier layer at the bottom, and the other end is extended to The top film encapsulation layer, when the flexible OLED display panel is bent, the stress generated inside thereof is released on the spacer wall, thereby improving the bending performance of the flexible OLED display panel.
  • the spacer wall is of the same material as the water-oxygen barrier layer and is an integrally formed structure, and the spacer wall also has the property of blocking moisture and oxygen, thereby also improving the water-oxygen barrier property of the flexible OLED display panel. .
  • signal interference between two adjacent pixel units can also be reduced.
  • FIG. 1 is a schematic structural diagram of a flexible OLED display panel according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural view of a spacer wall in an embodiment of the present invention.
  • FIG. 3 is a schematic structural diagram of a pixel unit in an embodiment of the present invention.
  • 4a-4e are exemplary diagrams of device structures obtained by corresponding steps in a method for fabricating a flexible OLED display panel according to an embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a display device according to an embodiment of the present invention.
  • the flexible OLED display panel 100 includes a flexible substrate 1 and an array of pixel units 2 disposed on the flexible substrate 1 (only exemplary in FIG. 1 ) A plurality of pixel units 2) and a Thin Film Encapsulation (TFE) 3 overlying the pixel unit 2 are shown.
  • the flexible substrate 1 is provided with a water and oxygen barrier layer 4, the pixel unit 2 is located on the water and oxygen barrier layer 4, and a spacer wall 5 is disposed between any two adjacent pixel units 2 .
  • the spacer wall 5 is connected to the water-oxygen barrier layer 4 and is integrally formed with the water-oxygen barrier layer 4, and in the thickness direction of the flexible OLED display panel 100, the One end of the spacer wall 5 is connected to the water oxygen barrier layer 4, and the other end extends to the thin film encapsulation layer 3 and is embedded in the thin film encapsulation layer 3.
  • the flexible OLED display panel 100 is provided with a spacer wall 5 between any two adjacent pixel units 2, one end of the spacer wall 5 is connected to the bottom water oxygen barrier layer 4, and the other end is extended to The top film encapsulation layer 3, when the flexible OLED display panel 100 is bent, the stress generated inside thereof is released on the spacer wall 5, thereby improving the bending performance of the flexible OLED display panel 100.
  • the spacers 5 are provided between any two adjacent pixel units 2, signal interference between the adjacent two pixel units 2 can also be reduced.
  • the materials of the water oxygen barrier layer 4 and the spacer wall 5 are all organic materials.
  • the spacer wall 5 employs the same organic material having the function of blocking moisture and oxygen as the water-oxygen barrier layer 4, and both are integrally formed structures, thereby improving the flexible OLED display panel 100 as a whole.
  • the longitudinal cross section of the spacer wall 5 has a trapezoidal shape.
  • the slope angle of the side of the spacer wall 5 is ⁇ , and the slope angle ⁇ is preferably set to a range of 80° ⁇ ⁇ ⁇ 90°.
  • the flexible substrate 1 may be made of polyimide (PI), polycarbonate (PC), polyether sulfone (PES), polyethylene terephthalate (PET), polyethylene naphthalate
  • PI polyimide
  • PC polycarbonate
  • PES polyether sulfone
  • PET polyethylene terephthalate
  • FRP glass fiber reinforced plastic
  • the pixel unit 2 includes a thin film transistor 21 and an organic light emitting diode 22 electrically connected to each other, and the thin film transistor 21 is formed on the water and oxygen barrier layer 4, the organic light emitting diode 22 is located on the thin film transistor 21.
  • the thin film transistor 21 includes an active layer 211 formed on the water and oxygen barrier layer 4, a gate insulating layer 212 overlying the active layer 211, and formed. a gate electrode 213 on the gate insulating layer 212, an interlayer dielectric layer 214 overlying the gate electrode 213, a source electrode 215 and a drain electrode 216 formed on the interlayer dielectric layer 214, and A flat layer 217 is disposed on the source electrode 215 and the drain electrode 216.
  • the gate electrode 213 is formed on the gate insulating layer 212 and disposed opposite to the active layer 211, and the source electrode 215 and the drain electrode 216 are formed at intervals between the layers.
  • On the dielectric layer 214, and the source electrode 215 and the drain electrode 216 are respectively connected to the active layer 211 through via holes provided in the interlayer dielectric layer 214 and the gate insulating layer 212 end.
  • the organic light emitting diode 22 includes: a first electrode 221 formed on the thin film transistor 21 and electrically connected to the thin film transistor 21, and disposed around the first electrode 221 a pixel defining layer 222, an organic light emitting layer 223 formed on the first electrode 221, and a second electrode 224 formed on the organic light emitting layer 223.
  • the first electrode 221 is specifically formed on the flat layer 217 and electrically connected to the thin film transistor 21 through a via hole disposed in the flat layer 217.
  • the first electrode in this embodiment 221 is a drain electrode 216 electrically connected to the thin film transistor 21.
  • the pixel defining layer 222 has an opening region, and the organic light emitting layer 223 is formed on the first electrode 221 and located in an opening region of the pixel defining layer 222.
  • the organic light-emitting layer 223 generally includes a hole injection layer (HIL), a hole transport layer (HTL), and a light-emitting material layer (Emissive) which are sequentially disposed on the first electrode 221.
  • the second electrode 224 is connected to the electron injection layer.
  • the pixel unit 2 corresponds to a red pixel unit; when the luminescent material layer in the organic luminescent layer 223 is selected as When the organic light emitting material of the green light is emitted, the pixel unit 2 corresponds to a green pixel unit; when the light emitting material layer of the organic light emitting layer 223 is selected as an organic light emitting material capable of emitting blue light, the pixel unit 2 corresponds to Blue pixel unit.
  • the thin film encapsulation layer 3 includes an organic thin film layer 31 and an inorganic thin film layer 32 which are alternately laminated.
  • the thin film encapsulation layer 3 is shown in FIG. 1 and comprises two organic thin film layers 31 and an inorganic thin film layer 32 between the two organic thin film layers 31.
  • the spacer wall 5 may be in any one of the thin film layers extending to the thin film encapsulation layer 3.
  • the spacer wall 5 is embedded in the inorganic thin film layer 32 and extends to the inorganic thin film layer 32.
  • the connection interface of the organic thin film layer 31 located at the upper side.
  • the thin film encapsulation layer 3 may further be provided with a touch panel (TP), a polarizer, a protective cover, and the like.
  • TP touch panel
  • polarizer polarizer
  • protective cover a protective cover
  • a thin film layer 4a of an organic material is formed on the flexible substrate 1.
  • the organic material thin film layer 4a is etched to form a water oxygen barrier layer 4 and a plurality of patterned spacer walls 5 protruding on the water oxygen barrier layer 4 by using a photolithography process.
  • each layer structure of the thin film transistor 21 is sequentially formed on the water-oxygen barrier layer 4 in a region surrounded by the adjacent spacer walls 5, and then the thin film transistor is formed.
  • the layer structure of the organic light emitting diode 22 is sequentially prepared in the region surrounded by the adjacent spacers 5 in FIG.
  • a thin film encapsulation layer 3 is formed on the pixel unit 2, and the thin film encapsulation layer 3 covers the respective pixel units 2, thereby preparing the flexible OLED display panel 100 in the embodiment.
  • the thickness of the organic material film layer 4a needs to be specifically set according to the thickness of the flexible OLED display panel 100 to be finally prepared, so that the spacer wall 5 formed by etching the organic material film layer 4a is formed. There is a sufficient height to ensure that one end of the spacer wall 5 is connected to the water oxygen barrier layer 4 at the bottom, and the other end is extended to the top film encapsulation layer 3 and embedded in the thin film encapsulation layer 3.
  • the present embodiment provides a display device.
  • the display device includes a driving unit 200 and an OLED display panel 100.
  • the driving unit 200 provides a driving signal to the OLED display panel 100 to enable the The OLED display panel 100 displays an image.
  • the OLED display panel 100 employs the flexible OLED display panel of the above embodiment of the present invention.
  • the flexible OLED display panel and the display device provided by the embodiments of the present invention not only improve the bending performance of the flexible OLED display panel by providing a spacer wall between any two adjacent pixel units. And also improve the water oxygen barrier performance of the flexible OLED display panel, while also reducing the signal interference between two adjacent pixel units.

Abstract

本发明公开了一种柔性OLED显示面板,包括:柔性基底、阵列设置于所述柔性基底上的像素单元以及覆设于所述像素单元上的薄膜封装层;其中,所述柔性基底上设置有水氧阻挡层,所述像素单元位于所述水氧阻挡层上,任意相邻的两个所述像素单元之间设置有间隔挡墙,所述间隔挡墙和所述水氧阻挡层为一体成型的结构;在所述柔性OLED显示面板的厚度方向上,所述间隔挡墙从所述水氧阻挡层延伸至所述薄膜封装层。本发明还公开了如上所述柔性OLED显示面板的制备方法以及包含所述柔性OLED显示面板的显示装置。本发明可以提高柔性OLED显示面板在被弯曲时的应力释放能力,提升柔性OLED显示面板的弯折性能。

Description

柔性OLED显示面板及其制备方法、显示装置 技术领域
本发明涉及显示技术领域,尤其涉及一种柔性OLED显示面板及其制备方法,还涉及包含所述柔性OLED显示面板的显示装置。
背景技术
有机电致发光二极管(Organic light-emitting diodes,OLED)显示面板具备自发光、对比度高、厚度薄、视角广和反应速度快等优点,是新一代平面显示技术的代表,越来越受到业界的推崇。而柔性OLED显示面板是其中的一个重要发展趋势。
柔性OLED显示面板不仅能够在体积上更加轻薄,而且能够降低功耗,从而有助于提升相应产品的续航能力。同时,由于柔性OLED显示面板的可弯曲性和柔韧性,其耐用程度也高于普通硬质显示面板。柔性OLED显示面板可广泛应用于各种带显示功能的产品中,例如可以应用于平板电脑、电视、移动终端和各类可穿戴式设备中。
通常地,当柔性OLED显示面板被弯曲时,出现应力,其中,拉张应力朝着凸状外表面出现而压应力朝着凹状内表面出现。如何提高柔性OLED显示面板在被弯曲时的应力释放能力是业内需要解决的问题。
发明内容
有鉴于此,本发明提供了一种柔性OLED显示面板及其制备方法,以提高柔性OLED显示面板在被弯曲时的应力释放能力。
为了实现上述目的,本发明采用了如下的技术方案:
一种柔性OLED显示面板,包括:柔性基底、阵列设置于所述柔性基底上的像素单元以及覆设于所述像素单元上的薄膜封装层;其中,所述柔性基底上设置有水氧阻挡层,所述像素单元位于所述水氧阻挡层上,任意相邻的两个所述像素单元之间设置有间隔挡墙,所述间隔挡墙和所述水氧阻挡层为一体成型 的结构;在所述柔性OLED显示面板的厚度方向上,所述间隔挡墙从所述水氧阻挡层延伸至所述薄膜封装层。
其中,所述薄膜封装层包括交替叠层设置的有机薄膜层和无机薄膜层,所述间隔挡墙嵌入所述薄膜封装层中。
其中,所述水氧阻挡层和所述间隔挡墙的材料均为有机材料。
其中,所述间隔挡墙的纵向截面呈梯形形状。
其中,所述间隔挡墙的侧面的斜坡角为α,并且,80°≤α<90°。
其中,所述像素单元包括相互电性连接的薄膜晶体管和有机发光二极管,所述薄膜晶体管形成在所述水氧阻挡层上,所述有机发光二极管位于所述薄膜晶体管上。
其中,所述薄膜晶体管包括:形成在所述水氧阻挡层上的有源层;覆设于所述有源层上的栅极绝缘层;形成在所述栅极绝缘层上的栅电极;覆设于所述栅电极上的层间介质层;形成在所述层间介质层上的源电极和漏电极;覆设于所述源电极和漏电极上的平坦层。
其中,所述有机发光二极管包括:形成在所述薄膜晶体管上并电性连接到所述薄膜晶体管的第一电极;围绕于所述第一电极设置的像素限定层;形成在所述第一电极上的有机发光层;形成在所述有机发光层上的第二电极。
本发明还提供了如上所述的柔性OLED显示面板的制备方法,其包括:
在柔性基底制备形成有机材料薄膜层;
应用光刻工艺将所述有机材料薄膜层刻蚀形成水氧阻挡层以及凸起于所述水氧阻挡层上的图形化的多个间隔挡墙;
在所述水氧阻挡层上制备形成阵列设置的像素单元,任意相邻的两个所述像素单元之间由所述间隔挡墙相互间隔;
在所述像素单元上制备形成薄膜封装层。
本发明的另一方面是提供一种显示装置,其包括驱动单元和如上所述的柔性OLED显示面板,所述驱动单元向所述柔性OLED显示面板提供驱动信号,以使所述柔性OLED显示面板显示影像。
本发明实施例提供的柔性OLED显示面板以及显示装置,在任意相邻的两个像素单元之间设置有间隔挡墙,间隔挡墙的一端连接至底部的水氧阻挡层,另一端延伸连接至顶部的薄膜封装层,当柔性OLED显示面板被弯曲时,其内部产生的应力在间隔挡墙上释放掉,由此提升了柔性OLED显示面板的弯折性能。在进一步地实施例中,间隔挡墙与水氧阻挡层的材料相同并且是一体成型的结构,间隔挡墙也具有阻挡水汽和氧气的性能,因此也提高了柔性OLED显示面板的水氧阻挡性能。另外,由于在任意相邻的两个像素单元之间均设置有间隔挡墙,由此还可以减小相邻的两个像素单元之间的信号干扰。
附图说明
图1是本发明实施例提供的柔性OLED显示面板的结构示意图;
图2是本发明实施例中的间隔挡墙的结构示意图;
图3是本发明实施例中的像素单元的结构示意图;
图4a~4e是本发明实施例提供的柔性OLED显示面板的制备方法中,各个步骤对应获得的器件结构的示例性图示;
图5是本发明实施例提供的显示装置的结构示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面结合附图对本发明的具体实施方式进行详细说明。这些优选实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的,并且本发明并不限于这些实施方式。
在此,还需要说明的是,为了避免因不必要的细节而模糊了本发明,在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤,而省略了与本发明关系不大的其他细节。
本实施例提供了一种柔性OLED显示面板,如图1所示,所述柔性OLED显示面板100包括柔性基底1、阵列设置于所述柔性基底1上的像素单元2(图1中仅示例性示出了若干个像素单元2)、以及覆设于所述像素单元2上的薄膜封装层(Thin Film Encapsulation,TFE)3。其中,所述柔性基底1上设置有水氧阻挡层4,所述像素单元2位于所述水氧阻挡层4上,任意相邻的两个所述像 素单元2之间设置有间隔挡墙5。具体地,所述间隔挡墙5连接于所述水氧阻挡层4上并且是与所述水氧阻挡层4为一体成型的结构,在所述柔性OLED显示面板100的厚度方向上,所述间隔挡墙5的一端连接至所述水氧阻挡层4,另一端延伸至所述薄膜封装层3并嵌入到所述薄膜封装层3中。
如上所述的柔性OLED显示面板100,在任意相邻的两个像素单元2之间设置有间隔挡墙5,间隔挡墙5的一端连接至底部的水氧阻挡层4,另一端延伸连接至顶部的薄膜封装层3,当柔性OLED显示面板100被弯曲时,其内部产生的应力在间隔挡墙5上释放掉,由此提升了柔性OLED显示面板100的弯折性能。另外,由于在任意相邻的两个像素单元2之间均设置有间隔挡墙5,由此还可以减小相邻的两个像素单元2之间的信号干扰。
其中,本实施例中,所述水氧阻挡层4和所述间隔挡墙5的材料均为有机材料。所述间隔挡墙5采用了与所述水氧阻挡层4相同的具有阻挡水汽和氧气的性能的有机材料,并且两者是一体成型的结构,由此从整体上提高了柔性OLED显示面板100的水氧阻挡性能,特别是像素单元2侧面的水氧阻挡性能。
具体地,如图1和图2所示,所述间隔挡墙5的纵向截面呈梯形形状。所述间隔挡墙5的侧面的斜坡角为α,斜坡角α优选的设定范围是80°≤α<90°。
其中,所述柔性基底1可以是采用聚酰亚胺(PI)、聚碳酸酯(PC)、聚醚砜(PES)、聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、多芳基化合物(PAR)或玻璃纤维增强塑料(FRP)等聚合物材料制备形成的柔性基板。
其中,参阅图1和图3,所述像素单元2包括相互电性连接的薄膜晶体管21和有机发光二极管22,所述薄膜晶体管21形成在所述水氧阻挡层4上,所述有机发光二极管22位于所述薄膜晶体管21上。
具体地,如图3所示,所述薄膜晶体管21包括:形成在所述水氧阻挡层4上的有源层211、覆设于所述有源层211上的栅极绝缘层212、形成在所述栅极绝缘层212上的栅电极213、覆设于所述栅电极213上的层间介质层214、形成在所述层间介质层214上的源电极215和漏电极216、以及覆设于所述源电极215和漏电极216上的平坦层217。其中,所述栅电极213形成在所述所述栅极绝缘层212上并与所述有源层211相对设置,所述源电极215和所述漏电极216相互间隔地形成在所述层间介质层214上,并且所述源电极215和所述漏电极 216通过设置在所述层间介质层214和所述栅极绝缘层212中的过孔分别连接到所述有源层211的两端。
具体地,如图3所示,所述有机发光二极管22包括:形成在所述薄膜晶体管21上并电性连接到所述薄膜晶体管21的第一电极221、围绕于所述第一电极221设置的像素限定层222、形成在所述第一电极221上的有机发光层223、以及形成在所述有机发光层223上的第二电极224。其中,所述第一电极221具体是形成在所述平坦层217上并通过设置在所述平坦层217中的过孔电性连接到所述薄膜晶体管21,本实施例中所述第一电极221是电性连接到所述薄膜晶体管21的漏电极216。所述像素限定层222具有开口区域,所述有机发光层223形成在所述第一电极221上并位于所述像素限定层222的开口区域中。
其中,所述有机发光层223通常包括依次设置在所述第一电极221上的空穴注入层(Hole Injection Layer,HIL)、空穴传输层(Hole Transport Layer,HTL)、发光材料层(Emissive Layer,EML)、电子传输层(Electron Transport Layer,ETL)和电子注入层(Electron Injection Layer,EIL)。所述第二电极224与电子注入层连接。
进一步地,当所述有机发光层223中发光材料层选择为可发出红光的有机发光材料时,所述像素单元2对应为红色像素单元;当所述有机发光层223中发光材料层选择为可发出绿光的有机发光材料时,所述像素单元2对应为绿色像素单元;当所述有机发光层223中发光材料层选择为可发出蓝光的有机发光材料时,所述像素单元2对应为蓝色像素单元。
其中,如图1所示,所述薄膜封装层3包括交替叠层设置的有机薄膜层31和无机薄膜层32。图1中示出了所述薄膜封装层3包含两层有机薄膜层31和位于两层有机薄膜层31之间的一层无机薄膜层32。所述间隔挡墙5可以是延伸至所述薄膜封装层3的任意一层薄膜层中,例如图1中,所述间隔挡墙5嵌入到无机薄膜层32中并延伸至无机薄膜层32与位于相对上方的有机薄膜层31的连接界面。
进一步地,在所述柔性OLED显示面板100中,所述薄膜封装层3上还可以设置有触控屏(Touch panel,TP)、偏光片、保护盖板等其他功能结构膜层。
下面参阅附图4a~4e并结合图1介绍如上所述的柔性OLED显示面板的制备方法,其包括以下步骤:
S101、如图4a所示,在柔性基底1制备形成有机材料薄膜层4a。
S102、如图4b所示,应用光刻工艺将所述有机材料薄膜层4a刻蚀形成水氧阻挡层4以及凸起于所述水氧阻挡层4上的图形化的多个间隔挡墙5。
S103、如图4c和4d所示,在所述水氧阻挡层4上制备形成阵列设置的像素单元2,任意相邻的两个所述像素单元2之间由所述间隔挡墙5相互间隔。具体地,如图图4c所示,首先是在所述水氧阻挡层4上、位于由相邻的间隔挡墙5包围的区域依次制备薄膜晶体管21的各层结构,然后在所述薄膜晶体管21上、位于由相邻的间隔挡墙5包围的区域依次制备有机发光二极管22的各层结构。
S104、如图4e所示,在所述像素单元2上制备形成薄膜封装层3,所述薄膜封装层3覆盖各个像素单元2,由此制备获得本实施例中的柔性OLED显示面板100。
其中,步骤S101中,所述有机材料薄膜层4a厚度需要根据最终所要制备形成的柔性OLED显示面板100的厚度具体设定,以使由所述有机材料薄膜层4a刻蚀形成的间隔挡墙5具有足够的高度,确保所述间隔挡墙5的一端连接至底部的水氧阻挡层4,另一端延伸连接至顶部的薄膜封装层3并嵌入到所述薄膜封装层3中。
本实施例提供了一种显示装置,如图5所示,所述显示装置包括驱动单元200和OLED显示面板100,所述驱动单元200向所述OLED显示面板100提供驱动信号,以使所述OLED显示面板100显示影像。所述OLED显示面板100采用了本发明如上实施例所述的柔性OLED显示面板。
综上所述,本发明实施例提供的柔性OLED显示面板以及显示装置,通过在任意相邻的两个像素单元之间设置有间隔挡墙,由此不仅提升了柔性OLED显示面板的弯折性能,并且也提高了柔性OLED显示面板的水氧阻挡性能,同时还可以减小相邻的两个像素单元之间的信号干扰。
需要说明的是,在本文中,诸如第一和第二等之类的关系术语仅仅用来将一个实体或者操作与另一个实体或操作区分开来,而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且,术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含,从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素,而且还包括没有明确列出的其他要素,或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有 更多限制的情况下,由语句“包括一个……”限定的要素,并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本申请原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本申请的保护范围。

Claims (20)

  1. 一种柔性OLED显示面板,包括:柔性基底、阵列设置于所述柔性基底上的像素单元以及覆设于所述像素单元上的薄膜封装层;其中,所述柔性基底上设置有水氧阻挡层,所述像素单元位于所述水氧阻挡层上,任意相邻的两个所述像素单元之间设置有间隔挡墙,所述间隔挡墙和所述水氧阻挡层为一体成型的结构;在所述柔性OLED显示面板的厚度方向上,所述间隔挡墙从所述水氧阻挡层延伸至所述薄膜封装层。
  2. 根据权利要求1所述的柔性OLED显示面板,其中,所述薄膜封装层包括交替叠层设置的有机薄膜层和无机薄膜层,所述间隔挡墙嵌入所述薄膜封装层中。
  3. 根据权利要求1所述的柔性OLED显示面板,其中,所述水氧阻挡层和所述间隔挡墙的材料均为有机材料。
  4. 根据权利要求1所述的柔性OLED显示面板,其中,所述间隔挡墙的纵向截面呈梯形形状。
  5. 根据权利要求4所述的柔性OLED显示面板,其中,所述间隔挡墙的侧面的斜坡角为α,并且,80°≤α<90°。
  6. 根据权利要求1所述的柔性OLED显示面板,其中,所述像素单元包括相互电性连接的薄膜晶体管和有机发光二极管,所述薄膜晶体管形成在所述水氧阻挡层上,所述有机发光二极管位于所述薄膜晶体管上。
  7. 根据权利要求6所述的柔性OLED显示面板,其中,所述薄膜晶体管包括:
    形成在所述水氧阻挡层上的有源层;
    覆设于所述有源层上的栅极绝缘层;
    形成在所述栅极绝缘层上的栅电极;
    覆设于所述栅电极上的层间介质层;
    形成在所述层间介质层上的源电极和漏电极;
    覆设于所述源电极和漏电极上的平坦层。
  8. 根据权利要求6所述的柔性OLED显示面板,其中,所述有机发光二极管包括:
    形成在所述薄膜晶体管上并电性连接到所述薄膜晶体管的第一电极;
    围绕于所述第一电极设置的像素限定层;
    形成在所述第一电极上的有机发光层;
    形成在所述有机发光层上的第二电极。
  9. 一种柔性OLED显示面板的制备方法,其中,包括:
    在柔性基底制备形成有机材料薄膜层;
    应用光刻工艺将所述有机材料薄膜层刻蚀形成水氧阻挡层以及凸起于所述水氧阻挡层上的图形化的多个间隔挡墙;
    在所述水氧阻挡层上制备形成阵列设置的像素单元,任意相邻的两个所述像素单元之间由所述间隔挡墙相互间隔;
    在所述像素单元上制备形成薄膜封装层。
  10. 根据权利要求9所述的柔性OLED显示面板的制备方法,其中,所述薄膜封装层包括交替叠层设置的有机薄膜层和无机薄膜层,所述间隔挡墙嵌入所述薄膜封装层中。
  11. 根据权利要求9所述的柔性OLED显示面板的制备方法,其中,所述间隔挡墙的纵向截面呈梯形形状。
  12. 根据权利要求11所述的柔性OLED显示面板的制备方法,其中,所述间隔挡墙的侧面的斜坡角为α,并且,80°≤α<90°。
  13. 一种显示装置,其包括驱动单元和柔性OLED显示面板,所述驱动单元向所述柔性OLED显示面板提供驱动信号,以使所述柔性OLED显示面板显示影像;
    其中,所述柔性OLED显示面板包括:柔性基底、阵列设置于所述柔性基底上的像素单元以及覆设于所述像素单元上的薄膜封装层;所述柔性基底上设置有水氧阻挡层,所述像素单元位于所述水氧阻挡层上,任意相邻的两个所述像素单元之间设置有间隔挡墙,所述间隔挡墙和所述水氧阻挡层为一体成型的 结构;在所述柔性OLED显示面板的厚度方向上,所述间隔挡墙从所述水氧阻挡层延伸至所述薄膜封装层。
  14. 根据权利要求13所述的显示装置,其中,所述薄膜封装层包括交替叠层设置的有机薄膜层和无机薄膜层,所述间隔挡墙嵌入所述薄膜封装层中。
  15. 根据权利要求13所述的显示装置,其中,所述水氧阻挡层和所述间隔挡墙的材料均为有机材料。
  16. 根据权利要求13所述的显示装置,其中,所述间隔挡墙的纵向截面呈梯形形状。
  17. 根据权利要求16所述的显示装置,其中,所述间隔挡墙的侧面的斜坡角为α,并且,80°≤α<90°。
  18. 根据权利要求13所述的显示装置,其中,所述像素单元包括相互电性连接的薄膜晶体管和有机发光二极管,所述薄膜晶体管形成在所述水氧阻挡层上,所述有机发光二极管位于所述薄膜晶体管上。
  19. 根据权利要求18所述的显示装置,其中,所述薄膜晶体管包括:
    形成在所述水氧阻挡层上的有源层;
    覆设于所述有源层上的栅极绝缘层;
    形成在所述栅极绝缘层上的栅电极;
    覆设于所述栅电极上的层间介质层;
    形成在所述层间介质层上的源电极和漏电极;
    覆设于所述源电极和漏电极上的平坦层。
  20. 根据权利要求18所述的显示装置,其中,所述有机发光二极管包括:
    形成在所述薄膜晶体管上并电性连接到所述薄膜晶体管的第一电极;
    围绕于所述第一电极设置的像素限定层;
    形成在所述第一电极上的有机发光层;
    形成在所述有机发光层上的第二电极。
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