WO2020155570A1 - Oled显示面板及显示装置 - Google Patents

Oled显示面板及显示装置 Download PDF

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Publication number
WO2020155570A1
WO2020155570A1 PCT/CN2019/095761 CN2019095761W WO2020155570A1 WO 2020155570 A1 WO2020155570 A1 WO 2020155570A1 CN 2019095761 W CN2019095761 W CN 2019095761W WO 2020155570 A1 WO2020155570 A1 WO 2020155570A1
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WO
WIPO (PCT)
Prior art keywords
layer
light
display panel
oled display
encapsulation layer
Prior art date
Application number
PCT/CN2019/095761
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English (en)
French (fr)
Inventor
金江江
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/631,176 priority Critical patent/US11108019B2/en
Publication of WO2020155570A1 publication Critical patent/WO2020155570A1/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors

Definitions

  • This application relates to the field of display technology, in particular to an OLED display panel and a display device.
  • the cathode structure of the Emitting Diode (Organic Light Emitting Diode) display panel is a tiled display panel. Its material is a magnesium-silver alloy or a magnesium-silver laminated structure. Since silver has a large reflectivity to light, when external light passes through the cathode structure , More loss.
  • the existing full-screen technology has a technical problem that it is difficult to encapsulate the digging area, which causes the external water and oxygen to easily invade, and needs to be improved.
  • the present application provides an OLED display panel and a display device, which are used to solve the technical problem that the existing full-screen technology is difficult to encapsulate the digging area, which causes the external water and oxygen to easily invade.
  • An embodiment of the present application provides an OLED display panel, which includes an electronic component installation area corresponding to the position of the electronic component, and a light-transmitting area at least partially located in the electronic component installation area, and the light-transmitting area is provided with a transparent filling layer;
  • the OLED display panel includes:
  • the flat layer is arranged on the built-in packaging layer.
  • the material of the built-in encapsulation layer is at least one of silicon oxide, silicon oxynitride, and silicon nitride.
  • the OLED display panel includes a substrate function layer and a driving circuit function layer disposed on the substrate function layer; the substrate function layer and the driving circuit function
  • the layer is provided with a first through hole at a position corresponding to the light-transmitting area, and the transparent filling layer is filled in the first through hole.
  • the built-in encapsulation layer covers the transparent filling layer, it is in contact with the driving circuit functional layer.
  • no light-emitting pixels are arranged on the electronic element arrangement area corresponding to the light-transmitting area.
  • the electronic element arrangement area further includes a light-emitting pixel array arranged on the light-transmitting area, and at least part of the light-emitting pixels is provided with a second through hole, the The second through hole is filled with a transparent filling layer.
  • the OLED display panel further includes a transparent conductive layer disposed at a corresponding position of the light-transmitting area, and the transparent conductive layer is disposed on the flat layer.
  • the flat layer is provided with a via hole at the edge of the built-in encapsulation layer, and the transparent conductive layer is formed in the via hole and between the via holes.
  • the OLED display panel further includes a light-emitting function layer and an encapsulation layer provided on the flat layer; the light-emitting function layer is provided with a first Three through holes, and the encapsulation layer fills the third through holes.
  • the encapsulation layer includes a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer that are stacked; the third through hole penetrates the first inorganic encapsulation layer; An encapsulation layer, and the first organic encapsulation layer fills the third through hole.
  • An embodiment of the present application provides a display device, which includes an OLED display panel, the OLED display panel includes an electronic component arrangement area corresponding to the position of the electronic component, and a light-transmitting area at least partially located in the electronic component arrangement area, the The transparent area is provided with a transparent filling layer; the OLED display panel includes:
  • the flat layer is arranged on the built-in packaging layer.
  • the material of the built-in packaging layer is at least one of silicon oxide, silicon oxynitride, and silicon nitride.
  • the OLED display panel includes a substrate function layer and a driving circuit function layer disposed on the substrate function layer; the substrate function layer and the driver circuit function layer A first through hole is opened at a position corresponding to the light-transmitting area, and the transparent filling layer is filled in the first through hole.
  • the built-in encapsulation layer is in contact with the driving circuit functional layer.
  • no light-emitting pixel is provided on the upper surface of the electronic element arrangement area corresponding to the light-transmitting area.
  • the electronic element arrangement area further includes a light-emitting pixel array arranged on the light-transmitting area, a second through hole is arranged between at least part of the light-emitting pixels, and the first The two through holes are filled with a transparent filling layer.
  • the OLED display panel further includes a transparent conductive layer disposed at a corresponding position of the light-transmitting area, and the transparent conductive layer is disposed on the flat layer.
  • the flat layer is provided with a via hole at the edge of the built-in packaging layer, and the transparent conductive layer is formed in the via hole and between the via holes.
  • the OLED display panel further includes a light-emitting function layer and an encapsulation layer disposed on the flat layer; the light-emitting function layer is provided with a third layer corresponding to the light-transmitting area. Through holes, the encapsulation layer fills the third through holes.
  • the encapsulation layer includes a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer that are stacked; the third through hole penetrates the first inorganic encapsulation layer Layer, the first organic encapsulation layer fills the third through hole.
  • the present application provides an OLED display panel and a display device.
  • the OLED display panel includes an electronic component installation area corresponding to the position of the electronic component, and a light-transmitting area at least partially located in the electronic component installation area; the light-transmitting area is provided with A transparent filling layer, a built-in encapsulation layer, is arranged on the transparent filling layer, and a flat layer is arranged on the built-in encapsulation layer; in this application, a transparent filling layer is arranged in the light-transmitting area to replace part of the film layer (especially for The light-blocking film layer) material can improve the light transmittance.
  • FIG. 1 is a schematic diagram of an OLED display panel in the existing full-screen technology.
  • FIG. 2 is a first top view of an OLED display panel provided by an embodiment of the application.
  • FIG. 3 is a first cross-sectional schematic diagram of an OLED display panel A-A' provided by an embodiment of the application.
  • FIG. 4 is a schematic diagram of a second cross-sectional view of the OLED display panel A-A' provided by an embodiment of the application.
  • FIG. 5 is a third schematic cross-sectional view of the OLED display panel A-A' provided by an embodiment of the application.
  • FIG. 6 is a second top view of an OLED display panel provided by an embodiment of the application.
  • FIG. 7 is a first cross-sectional schematic diagram of an OLED display panel B-B' provided by an embodiment of the application.
  • FIG. 8 is a second schematic cross-sectional view of the OLED display panel B-B' provided by an embodiment of the application.
  • FIG. 9 is a third cross-sectional schematic diagram of the OLED display panel B-B' provided by an embodiment of the application.
  • the present application addresses the technical problem of defects in the existing electronic component technology, and the embodiments of the present application can solve the problem.
  • the present application provides an OLED display panel, which includes an electronic component arrangement area A1 corresponding to the position of the electronic component 3, and at least part of the electronic component arrangement area
  • the light-transmitting area A2 is provided with a transparent filling layer 21;
  • the OLED display panel includes:
  • a built-in encapsulation layer M19 is arranged on the transparent filling layer 21;
  • the flat layer M11 is disposed on the built-in packaging layer M19.
  • the light-transmitting area A2 refers to an area provided with a transparent filling layer 21, which uses the transparent filling layer 21 to replace the structural layer of the display panel, thereby enhancing the light transmittance of the display panel.
  • the transparent filling layer 21 may be an organic glue filling area, etc., so that external light can pass through the light-transmitting area and reach the electronic components, such as cameras, light sensors, etc., arranged under the screen, so that the electronic components Realize the corresponding function.
  • the material of the built-in encapsulation layer M19 is at least one of silicon oxide (SiOx), silicon oxynitride (SiONx), and silicon nitride (SiNx); it may form one layer or multiple layers, To enhance the packaging effect.
  • the OLED display panel includes a substrate function layer and a driving circuit function layer disposed on the substrate function layer; the substrate function layer and the driving circuit function layer correspond to the transparent A first through hole is opened at the position of the light area, and the transparent filling layer 21 is filled in the first through hole.
  • the built-in encapsulation layer covers the transparent filling layer 21 of M19, it is in contact with the driving circuit functional layer, such as with the upper surface of the circuit functional layer (for example, the insulating layer M9).
  • the OLED display panel further includes a transparent conductive layer M18 disposed at a corresponding position of the light-transmitting area, and the transparent conductive layer is disposed on the flat layer.
  • the flat layer is provided with via holes at the edges of the built-in encapsulation layer, and the transparent conductive layer is formed in the via holes and between the via holes.
  • the OLED display panel further includes a light-emitting function layer and an encapsulation layer disposed on the flat layer; the light-emitting function layer is provided with a third through hole at a position corresponding to the light-transmitting area, so The packaging layer fills the third through hole.
  • the encapsulation layer includes a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer that are stacked; the third through hole penetrates the first inorganic encapsulation layer, and the The first organic encapsulation layer fills the third through hole.
  • the OLED display panel includes an electronic component setting area corresponding to the position of the electronic component, and a light-transmitting area at least partly located in the electronic component setting area; the light-transmitting area is provided with a transparent area.
  • the filling layer, the built-in encapsulation layer, is arranged on the transparent filling layer, and the flat layer is arranged on the built-in encapsulation layer; in this application, a transparent filling layer is arranged in the light-transmitting area to replace part of the film layer (especially for light Block larger film) materials, improve light transmittance, while realizing the built-in design of electronic components such as cameras, without forming a cavity like the prior art, and there is no technical problem that is difficult to package; at the same time, Adding a built-in encapsulation layer between the transparent filling layer and the flat layer reduces the speed of water and oxygen intruding into the device through the transparent filling layer and prolongs the service life of the device.
  • the electronic component 3 can be a kind of electronic component, or a collection of various electronic components, such as a camera, a light sensor, an infrared-based fingerprint recognition device, etc.
  • the electronic component setting area corresponding to the electronic component may not be provided with light-emitting pixels. Problem 1 can be solved when time, or luminous pixels can be set, problem 2 can be solved at the same time. The following will analyze these two branches.
  • the OLED display panel provided by this embodiment has no light-emitting pixels disposed on the electronic element arrangement area A1 corresponding to the light-transmitting area A2.
  • the light-transmitting area A2 It is the same as the electronic component installation area A1, that is, the electronic component installation area A1 adopts the arrangement of the light-transmitting area A2.
  • the OLED display panel is provided with no light-emitting pixels on the electronic element setting area A1 corresponding to the light-transmitting area A2, the electronic element setting area A1 does not have a display function and cannot display images, thereby not causing the device Luminescence affects the lighting effect of electronic components.
  • the OLED display panel further includes a display area surrounding the light-transmitting area (that is, the effective light-emitting area of the display panel) A3;
  • the OLED display panel includes:
  • the substrate function layer and the driving circuit function layer are provided with first through holes at positions corresponding to the light-transmitting area A2, that is, the substrate function layer and the driving circuit function layer are present in the display area A3, which is transparent There is no substrate function layer and driver circuit function layer in area A2; at this time, the thickness of the transparent filling layer 21 in the light-transmitting area is not less than the substrate function layer and driver circuit in the standard display area The total thickness of the functional layer.
  • the light-emitting function layer is provided with a third through hole at a position corresponding to the light-transmitting area A2, and the encapsulation layer fills the third through-hole, that is, there is a light-emitting function layer in the display area A3, and the light-transmitting area A2 There is no light-emitting function layer inside, and the thickness of the encapsulation layer in the light-transmitting area A2 is greater than the thickness of the encapsulation layer in the display area A3.
  • the encapsulation layer includes a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer that are stacked; the third through hole penetrates the first inorganic encapsulation layer, and the first inorganic encapsulation layer The organic encapsulation layer fills the third through hole, that is, the light-emitting function layer and the first inorganic encapsulation layer are present in the display area A3, and the light-emitting function layer and the first inorganic encapsulation layer do not exist in the light-transmitting area A2, which is located in the light-transmitting area
  • the thickness of the first organic encapsulation layer in A2 is greater than the thickness of the first organic encapsulation layer in the display area A3.
  • the OLED display panel in the display area A3, includes from bottom to top: a flexible substrate M1, a buffer barrier layer M2, an inorganic buffer barrier layer M3, and low-temperature polysilicon M4, first gate insulating layer M5, first gate M6, second gate insulating layer M7, second gate M8, insulating layer M9, drain/drain M10, flat layer M11, first electrode M12, The pixel isolation layer M13, the light emitting layer and the second electrode M14, the first inorganic encapsulation layer M15, the first organic encapsulation layer M16, and the second inorganic encapsulation layer M17.
  • the substrate function layer includes a flexible substrate M1, a buffer barrier layer M2, and an inorganic buffer layer M3.
  • the drive circuit function layer includes low temperature polysilicon M4, a first gate insulating layer M5, a first gate M6, and a second gate insulating layer.
  • the light-emitting function layer includes a first electrode M12, a pixel isolation layer M13, a light-emitting layer and a second electrode M14;
  • the encapsulation layer in the display area A3 includes The first inorganic encapsulation layer M15, the second organic encapsulation layer M16, and the second inorganic encapsulation layer M17;
  • the first encapsulation layer in the light-transmitting area A2 includes the second organic encapsulation layer M16 and the second inorganic encapsulation layer M17.
  • the OLED display panel further includes a bending area A4; in the bending area A4, the OLED display panel includes: Flexible substrate M1, transparent filling layer 21, drain/drain M10, flat layer M11, and pixel isolation layer M13.
  • the OLED display panel in the light-transmitting area, the OLED display panel further includes a transparent conductive layer M18, and the transparent conductive layer is formed on the On the flat layer, the first organic encapsulation layer M16 is formed on the transparent conductive layer.
  • the transparent conductive layer is patterned with scan lines and data lines.
  • the scan lines are used to connect the gates of the pixel driving transistors in the same row on both sides of the light-transmitting area.
  • the OLED display panel does not include a transparent conductive layer in the light-transmitting area, and the first organic encapsulation layer M16 is formed on the flat layer M11 on.
  • the OLED display panel of the present application in the light transmission area, the OLED display panel further includes a built-in encapsulation layer M19, and the built-in encapsulation layer is formed on the On the transparent filling layer, the flat layer is formed on the built-in packaging layer.
  • the OLED display panel does not include a built-in encapsulation layer M19 in the light transmission area, and the flat layer is formed on the transparent filling layer.
  • the OLED display panel is composed of a flexible substrate made of polyimide materials (M1 in the above) and a buffer barrier layer made of SiOx (M2 in the above) from bottom to top.
  • Inorganic buffer layer made of SiN/SiOx and other materials (i.e. M3 above), low-temperature polysilicon layer made of low-temperature polysilicon (i.e. M4 above), and the first gate insulating layer made of SiN/SiOx materials (i.e.
  • the first gate made of materials such as molybdenum (Mo) (namely M6 above), the second gate insulating layer made of SiN/SiOx (namely M7 above), the second gate made of materials such as Mo Pole (ie M8 above), insulating layer such as SiN/SiOx (ie M9 above), source/drain composed of Ti/Al/Ti (Ti/Al/Ti) (ie M10 above), open hole Fill the organic glue filling layer (ie 21 above), built-in packaging layer such as SiN/SiOx/SiON (ie M19 above), a flat layer formed of polyimide materials (ie M11 above), ITO ( The first electrode composed of conductive glass)/Ag (silver)/ITO (ie M12 above), the pixel isolation layer formed of polyimide material (ie M13 above), small molecules or polymers, and Mg ( The light-emitting layer composed of magnesium)/Ag and other metals (i.
  • Mo molyb
  • the first inorganic encapsulation layer composed of SiNx, SiOx, SiONx, Al2O3 (aluminum oxide), TiOx (titanium oxide) and other materials (i.e. M15 above)
  • the first organic encapsulation layer composed of acrylic, epoxy or silicone (ie M16 above)
  • the second inorganic encapsulation layer composed of SiNx, SiOx, SiONx, Al2O3, TiOx and other materials (ie M16 above ).
  • the display panel device is divided into three parts: the display area (Active Area, namely the display area A3), the bending area (PB Area), and the camera placement area (CUP Area, namely the electronic component setting area A1). among them:
  • the flexible substrate, buffer barrier layer, inorganic buffer layer, low temperature polysilicon layer, first gate insulating layer, first gate, second gate insulating layer, second gate, and insulating layer are all It is removed and then filled with transparent organic glue to form a transparent filling layer.
  • a built-in packaging layer of SiNx or SiOx or SiONx is added.
  • the built-in packaging layer is flat and the flat layer corresponds to the built-in Open holes on both sides of the encapsulation layer, deposit an ITO layer (made synchronously with the AND layer ITO/Ag/ITO, but remove Ag) as a transparent electrode (used to form patterned scan lines and data lines), above the ITO is the first organic Encapsulation layer r, the second inorganic encapsulation layer.
  • ITO layer made synchronously with the AND layer ITO/Ag/ITO, but remove Ag
  • a transparent electrode used to form patterned scan lines and data lines
  • the OLED display panel of the present application in the light-transmitting area, the OLED display panel further includes a reinforced transparent filling layer 22, which is arranged on the flat layer M11 and the package Between layers.
  • the reinforced transparent filling layer 22 may be an organic glue filling layer or the like.
  • the reinforced transparent filling layer 22 is formed on the transparent conductive layer M18, and the encapsulation layer is formed on the reinforced transparent filling layer 22.
  • the reinforced transparent filling layer 22 is formed on the flat layer M11, and the encapsulation layer is formed on the reinforced transparent filling layer 22.
  • the embodiment shown in FIG. 4 can further enhance the light transmittance of the light-transmitting area.
  • the encapsulation layer in the OLED display panel of the present application, in the light-transmitting area, includes a first inorganic encapsulation layer M15, a second organic encapsulation layer M16, and a second inorganic encapsulation layer M15.
  • Encapsulation layer M17; the first inorganic encapsulation layer M15 is formed on the reinforced transparent filling layer 22.
  • the encapsulation layer in the light-transmitting area, includes a first inorganic encapsulation layer M15, a second organic encapsulation layer M16, and a second inorganic encapsulation layer M17;
  • the first inorganic encapsulation layer M15 is formed on the transparent conductive layer.
  • the OLED display panel in the light-transmitting area, includes a reinforced transparent filling layer 22, and the first encapsulation layer includes a first inorganic encapsulation layer M15,
  • the second organic encapsulation layer M16, the second inorganic encapsulation layer M17, the reinforced transparent filling layer 22 are formed on the flat layer M11, and the first inorganic encapsulation layer M15 is formed on the reinforced transparent filling layer 22.
  • the OLED display panel in the light-transmitting area, includes a transparent conductive layer, a reinforced transparent filling layer 22, and an encapsulation layer includes a first inorganic encapsulation layer M15, A second organic encapsulation layer M16, a second inorganic encapsulation layer M17, a transparent conductive layer is formed on the flat layer M11, a reinforced transparent filling layer 22 is formed on the transparent conductive layer M11, and the first inorganic encapsulation layer M15 is formed on the reinforced transparent filling layer 22.
  • the OLED display panel provided by this embodiment further includes an array of light-emitting pixels arranged on the light-transmitting area A2 in the electronic component arrangement area A1, at least part of which is A second through hole is provided between the light-emitting pixels, and the second through hole is filled with a transparent filling layer 21.
  • the electronic component setting area A1 has a display function and can display pictures.
  • the light-emitting pixel array includes the sub-pixels 4 arranged in the arrangement shown in FIG. 6.
  • the light-transmitting area A2 is filled between adjacent pixels of the light-emitting pixel array.
  • the area corresponding to the sub-pixel 4 is marked as the light-emitting area A5.
  • the pixel density of the light-emitting pixel array in the electronic element arrangement area A1 is smaller than the pixel density of the light-emitting pixel array in the display area A3, which can further enhance the light transmission effect of the electronic element arrangement area A1.
  • the OLED display panel includes:
  • the substrate function layer and the driving circuit function layer are provided with a first through hole at a position corresponding to the light-transmitting area A2, that is, the substrate function layer and the driving circuit function layer are present in the light-emitting area A5, which is transparent to light. There is no substrate function layer and driver circuit function layer in area A2; at this time, the thickness of the transparent filling layer 21 in the light-transmitting area is not less than the substrate function layer and driver circuit in the standard display area The total thickness of the functional layer.
  • the light-emitting function layer is provided with a third through hole at a position corresponding to the light-transmitting area A2, and the encapsulation layer fills the third through-hole, that is, there is a light-emitting function layer in the light-emitting area A5, and the light-transmitting area A2 There is no light-emitting function layer inside, and the thickness of the encapsulation layer in the light-transmitting area A2 is greater than the thickness of the encapsulation layer in the light-emitting area A5.
  • the electrode layer of the light-emitting pixel in the electronic element arrangement area is a transparent conductive layer.
  • the OLED display panel sequentially includes from bottom to top:
  • the substrate function layer includes a flexible substrate M1, a buffer barrier layer M2, and an inorganic buffer layer M3.
  • the drive circuit function layer includes low temperature polysilicon M4, a first gate insulating layer M5, a first gate M6, and a second gate insulating layer.
  • the light-emitting function layer includes a first electrode M12, a pixel isolation layer M13, a light-emitting layer and a second electrode M14;
  • the encapsulation layer in the display area A3 includes The first inorganic encapsulation layer M15, the second organic encapsulation layer M16, and the second inorganic encapsulation layer M17;
  • the first encapsulation layer in the light-transmitting area A2 includes the second organic encapsulation layer M16 and the second inorganic encapsulation layer M17.
  • the OLED display panel in the light-transmitting area, the OLED display panel further includes a transparent conductive layer M18, and the transparent conductive layer is formed on the On the flat layer, an encapsulation layer is formed on the transparent conductive layer.
  • the transparent conductive layer is patterned to form scan lines and data lines; the transparent conductive layer located between the sub-pixels in the same row is patterned to form scan lines, which are used to connect the driving pixels of the same row on both sides of the light-transmitting area.
  • the transparent conductive layer located between the sub-pixels in the same column is patterned to form a data line for connecting the source/drain of the pixel driving transistor in the same column on both sides of the light-transmitting area.
  • the OLED display panel does not include a transparent conductive layer in the light-transmitting area, and the encapsulation layer is formed on the flat layer.
  • the OLED display panel of the present application in the light-transmitting area, the OLED display panel further includes a built-in encapsulation layer M19, and the built-in encapsulation layer is formed on the On the transparent filling layer, the flat layer is formed on the built-in packaging layer.
  • the OLED display panel does not include a built-in encapsulation layer M19 in the light transmission area, and the flat layer is formed on the transparent filling layer.
  • the OLED display panel is composed of a flexible substrate made of polyimide material (namely M1 above), and a buffer barrier layer formed of SiOx material (namely M2 above). ), an inorganic buffer layer made of SiN/SiOx and other materials (namely M3 above), a low-temperature polysilicon layer made of low-temperature polysilicon (namely M4 above), a first gate insulating layer made of SiN/SiOx material (that is, the upper M5 in the text), the first gate made of materials such as molybdenum (Mo) (namely M6 above), the second gate insulating layer made of SiN/SiOx (namely M7 above), the second gate made of materials such as Mo Two gates (M8 in the above), insulating layers such as SiN/SiOx (M9 in the above), and source/drain composed of Ti/Al/Ti (Ti/Al/Ti) (M10 in the above),
  • M1 polyimide material
  • M4 low-temperature poly
  • the pixel isolation layer made of polyimide materials (i.e. M13 above), small molecules or polymers, and
  • the display panel is divided into three parts: display area (Active Area), bending area (PB Area), camera placement area (CUP Area); where:
  • the flexible substrate, buffer barrier layer, inorganic buffer layer, low temperature polysilicon layer, first gate insulating layer, first gate, second gate insulating layer, second gate, and insulating layer are all It is removed and then filled with transparent organic glue to form a transparent filling layer.
  • a built-in packaging layer of SiNx or SiOx or SiONx is added.
  • the built-in packaging layer is flat and the flat layer corresponds to the built-in Open holes on both sides of the encapsulation layer, deposit an ITO layer (made synchronously with the AND layer ITO/Ag/ITO, but remove Ag) as a transparent electrode (used to form patterned scan lines and data lines), above the ITO is the first organic Encapsulation layer r, the second inorganic encapsulation layer.
  • ITO layer made synchronously with the AND layer ITO/Ag/ITO, but remove Ag
  • a transparent electrode used to form patterned scan lines and data lines
  • Fig. 7 is similar to the embodiment shown in Fig. 3, the difference is that the embodiment shown in Fig. 3 is that the entire CUP area PI and other substrate functional layers and driving circuit functional layers are removed and filled with organic transparent glue.
  • Fig. 7 In the illustrated embodiment, the corresponding area of the pixel Pixel that has a display function in the CUP area (i.e. the light-emitting area A5 above) remains unchanged, and the flexible substrate of the non-pixel area (i.e.
  • the light-transmitting area A2 above is buffered
  • the barrier layer, the inorganic buffer layer, the low-temperature polysilicon layer, the first gate insulating layer, the first gate, the second gate insulating layer, the second gate, and the insulating layer are all removed, and then filled with transparent organic glue to form a transparent filling
  • a built-in encapsulation layer of SiNx or SiOx or SiONx is added.
  • the top of the built-in encapsulation layer is a flat layer.
  • the flat layer corresponds to the openings on both sides of the built-in encapsulation layer, and the ITO layer is deposited (Manufactured simultaneously with the AND layer ITO/Ag/ITO, but removing the Ag) as a transparent electrode (used to form patterned scan lines and data lines), above the ITO is the first organic encapsulation layer r and the second inorganic encapsulation layer.
  • the electrode layer of the light-emitting pixel in the electronic component installation area is a transparent conductive layer, such as ITO Wait.
  • multiple built-in encapsulation layers may be provided.
  • they are respectively marked as the first built-in encapsulation layer M19a and the second built-in encapsulation layer M19b, and the first built-in encapsulation layer M19a is disposed on
  • the corresponding position of the light-transmitting area and the interface between the substrate functional layer and the driving circuit functional layer plays a first protective role.
  • the second built-in encapsulation layer M19b is arranged in the light-transmitting area corresponding to the boundary of the driving circuit functional layer and the flat layer The location plays a protective role for the first time.
  • the encapsulation layer in the light-transmitting area is exactly the same as the encapsulating layer in other areas.
  • the light-emitting function layer is provided with a third through hole at a position corresponding to the light-transmitting area.
  • the third through hole is filled with a reinforced transparent filling layer 22, and the encapsulation layer is formed on the reinforced transparent filling layer 22 and the light-emitting function layer.
  • the present application also provides a display device, such as a flexible display device, which includes the OLED display panel provided by the present application, which can realize a full screen, and the OLED display panel includes electronic components corresponding to the positions of the electronic components.
  • a display device such as a flexible display device, which includes the OLED display panel provided by the present application, which can realize a full screen, and the OLED display panel includes electronic components corresponding to the positions of the electronic components.
  • An element arrangement area and a light-transmitting area at least partially located in the electronic element arrangement area, the light-transmitting area is provided with a transparent filling layer;
  • the OLED display panel includes:
  • the flat layer is arranged on the built-in packaging layer.
  • the material of the built-in encapsulation layer is at least one of silicon oxide, silicon oxynitride, and silicon nitride.
  • the OLED display panel includes a substrate function layer and a driving circuit function layer disposed on the substrate function layer; the substrate function layer and the The driving circuit functional layer is provided with a first through hole at a position corresponding to the light transmission area, and the transparent filling layer is filled in the first through hole.
  • the built-in encapsulation layer covers the transparent filling layer, it is in contact with the driving circuit functional layer.
  • no light-emitting pixels are arranged in the electronic element installation area, and the light-transmitting area is the same as the electronic element installation area.
  • a light-emitting pixel array is arranged in the electronic element arrangement area, and the light-transmitting area is filled between adjacent pixels of the light-emitting pixel array.
  • the OLED display panel further includes a transparent conductive layer disposed at a position corresponding to the light-transmitting area, and the transparent conductive layer is disposed on the flat layer.
  • the flat layer is provided with a via hole at the edge of the built-in encapsulation layer, the transparent conductive layer is formed in the via hole, and the via hole between.
  • the OLED display panel further includes a light-emitting function layer and an encapsulation layer disposed on the flat layer; the light-emitting function layer corresponds to the position of the light-transmitting area A third through hole is opened, and the encapsulation layer fills the third through hole.
  • the encapsulation layer includes a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer that are stacked; the third through hole penetrates the A first inorganic encapsulation layer, and the first organic encapsulation layer fills the third through hole.
  • the present application provides an OLED display panel and a display device.
  • the OLED display panel includes an electronic element arrangement area corresponding to the position of the electronic element, and a light-transmitting area at least partially located in the electronic element arrangement area; the light-transmitting area is provided with The transparent filling layer, the built-in encapsulation layer, is arranged on the transparent filling layer, and the flat layer is arranged on the built-in encapsulation layer; in this application, a transparent filling layer is provided in the light-transmitting area to replace part of the film layer (especially for The film layer with a large light blocking layer) can improve the light transmittance, while realizing the built-in design of electronic components such as cameras, it will not form a cavity like the existing technology, and there is no technical problem that is difficult to package; , Add a built-in encapsulation layer between the transparent filling layer and the flat layer, reducing the speed of water and oxygen intruding into the device through the transparent filling layer, and prolonging the service life of the

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Abstract

本申请提供一种OLED显示面板及显示装置，该OLED显示面板包括部分位于电子元件设置区内的透光区；透光区设置有透明填充层，内置封装层，平坦层；通过在透光区内设置透明填充层，以取代部分膜层材料，提高光线透过率，不存在难以封装的技术问题；同时内置封装层降低了水氧通过透明填充层入侵器件内部的速度。

Description

OLED显示面板及显示装置 技术领域
本申请涉及显示技术领域，尤其是一种OLED显示面板及显示装置。
 背景技术
随着全面屏技术的发展，屏下摄像头等电子元件放置在显示屏下的技术是发展趋势。
现有OLED（Organic Light Emitting Diode，有机发光二极管）显示面板的阴极结构为平铺显示面板，其材料为镁银合金、或者镁银叠层结构，由于银对光线具有较大的反射率，外界光线穿过阴极结构时，损耗较多。
因此，如图1所示，现有技术为了保证屏下电子元件，如摄像头的采光效果，需要将摄像头上方的材料（包括TFT电路、发光层、阴极结构等）去除，即挖孔技术，但是这种技术对应的挖孔区域OP内没有材料是一个孔，难以封装造成外界水氧容易入侵。
所以，现有全面屏技术存在挖孔区域难以封装造成外界水氧容易入侵的技术问题，需要改进。
 技术问题
本申请提供一种OLED显示面板及显示装置，用以解决现有全面屏技术存在的挖孔区域难以封装造成外界水氧容易入侵的技术问题。
 技术解决方案
为解决上述问题，本申请提供的技术方案如下：
本申请实施例提供一种OLED显示面板，其包括对应电子元件位置的电子元件设置区、以及至少部分位于所述电子元件设置区内的透光区，所述透光区设置有透明填充层；所述OLED显示面板包括：
内置封装层，设置于所述透明填充层上；
平坦层，设置于所述内置封装层上。
在本申请实施例提供的OLED显示面板中，所述内置封装层的材料为氧化硅、氮氧化硅、氮化硅中的至少一种。
在本申请实施例提供的OLED显示面板中，所述OLED显示面板包括衬底功能层以及设置在所述衬底功能层上的驱动电路功能层；所述衬底功能层和所述驱动电路功能层对应所述透光区的位置开设有第一通孔，所述透明填充层填充在所述第一通孔内。
在本申请实施例提供的OLED显示面板中，所述内置封装层覆盖所述透明填充层后，与所述驱动电路功能层接触。
在本申请实施例提供的OLED显示面板中，所述电子元件设置区在与所述透光区对应的上面未设置发光像素。
在本申请实施例提供的OLED显示面板中，所述电子元件设置区还包括设置在所述透光区上的发光像素阵列，至少部分所述发光像素之间设有第二通孔，所述第二通孔内填充有透明填充层。
在本申请实施例提供的OLED显示面板中，所述OLED显示面板还包括设置在所述透光区对应位置的透明导电层，所述透明导电层设置于所述平坦层上。
在本申请实施例提供的OLED显示面板中，所述平坦层在所述内置封装层的边缘设置有过孔，所述透明导电层形成于所述过孔内、以及所述过孔之间。
在本申请实施例提供的OLED显示面板中，所述OLED显示面板还包括设置在所述平坦层上的发光功能层以及封装层；所述发光功能层对应所述透光区的位置开设有第三通孔，所述封装层填充所述第三通孔。
在本申请实施例提供的OLED显示面板中，所述封装层包括层叠设置的第一无机封装层、第一有机封装层和第二无机封装层；所述第三通孔贯穿所述第一无机封装层，所述第一有机封装层填充所述第三通孔。
本申请实施例提供一种显示装置，其包括OLED显示面板，所述OLED显示面板包括对应电子元件位置的电子元件设置区、以及至少部分位于所述电子元件设置区内的透光区，所述透光区设置有透明填充层；所述OLED显示面板包括：
内置封装层，设置于所述透明填充层上；
平坦层，设置于所述内置封装层上。
在本申请实施例提供的显示装置中，所述内置封装层的材料为氧化硅、氮氧化硅、氮化硅中的至少一种。
在本申请实施例提供的显示装置中，所述OLED显示面板包括衬底功能层以及设置在所述衬底功能层上的驱动电路功能层；所述衬底功能层和所述驱动电路功能层对应所述透光区的位置开设有第一通孔，所述透明填充层填充在所述第一通孔内。
在本申请实施例提供的显示装置中，所述内置封装层覆盖所述透明填充层后，与所述驱动电路功能层接触。
在本申请实施例提供的显示装置中，所述电子元件设置区在与所述透光区对应的上面未设置发光像素。
在本申请实施例提供的显示装置中，所述电子元件设置区还包括设置在所述透光区上的发光像素阵列，至少部分所述发光像素之间设有第二通孔，所述第二通孔内填充有透明填充层。
在本申请实施例提供的显示装置中，所述OLED显示面板还包括设置在所述透光区对应位置的透明导电层，所述透明导电层设置于所述平坦层上。
在本申请实施例提供的显示装置中，所述平坦层在所述内置封装层的边缘设置有过孔，所述透明导电层形成于所述过孔内、以及所述过孔之间。
在本申请实施例提供的显示装置中，所述OLED显示面板还包括设置在所述平坦层上的发光功能层以及封装层；所述发光功能层对应所述透光区的位置开设有第三通孔，所述封装层填充所述第三通孔。
在本申请实施例提供的显示装置中，所述封装层包括层叠设置的第一无机封装层、第一有机封装层和第二无机封装层；所述第三通孔贯穿所述第一无机封装层，所述第一有机封装层填充所述第三通孔。
 有益效果
本申请提供一种OLED显示面板及显示装置，该OLED显示面板包括对应电子元件位置的电子元件设置区、以及至少部分位于所述电子元件设置区内的透光区；所述透光区设置有透明填充层，内置封装层，设置于所述透明填充层上，平坦层，设置于所述内置封装层上；本申请在透光区内设置透明填充层，以取代部分膜层（尤其是对光线阻隔较大的膜层）材料，提高光线透过率，在实现摄像头等电子元件的内置式设计的同时，又不会如现有技术那样形成一个空洞，不存在难以封装的技术问题；同时，在透明填充层和平坦层之间增加内置封装层，降低了水氧通过透明填充层入侵器件内部的速度，延长了器件使用寿命。
 附图说明
为了更清楚地说明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单介绍，显而易见地，下面描述中的附图仅仅是申请的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1现有全面屏技术中OLED显示面板的示意图。
图2为本申请实施例提供的OLED显示面板的第一种俯视图。
图3为本申请实施例提供的OLED显示面板A-A’的第一种剖面示意图。
图4为本申请实施例提供的OLED显示面板A-A’的第二种剖面示意图。
图5为本申请实施例提供的OLED显示面板A-A’的第三种剖面示意图。
图6为本申请实施例提供的OLED显示面板的第二种俯视图。
图7为本申请实施例提供的OLED显示面板B-B’的第一种剖面示意图。
图8为本申请实施例提供的OLED显示面板B-B’的第二种剖面示意图。
图9为本申请实施例提供的OLED显示面板B-B’的第三种剖面示意图。
 本发明的实施方式
以下各实施例的说明是参考附加的图示，用以例示本申请可用以实施的特定实施例。本申请所提到的方向用语，例如[上]、[下]、[前]、[后]、[左]、[右]、[内]、[外]、[侧面]等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本申请，而非用以限制本申请。在图中，结构相似的单元是用以相同标号表示。
本申请针对现有电子元件技术存在缺陷的技术问题，本申请实施例可以解决该问题。
如图1所示，现有技术为了保证屏下电子元件，如摄像头的采光效果，需要将摄像头上方（即图1中的OP区域）的结构（包括晶体管电路、发光层、阴极结构等）去除，即挖孔技术，但是这种技术存在两个方面的问题：问题1，挖孔区域内没有膜层材料是一个孔，难以封装；问题2，挖孔区域由于没有显示物质，不能显示，不是真正意义上的全面屏；本申请以下实施例至少可以解决问题1，部分实施例在解决问题1的同时，还能解决问题2。
在一种实施例中，如图2至图9所示，本申请提供一种OLED显示面板，其包括对应电子元件3位置的电子元件设置区A1、以及至少部分位于所述电子元件设置区内的透光区A2，所述透光区设置有透明填充层21；所述OLED显示面板包括：
内置封装层M19，设置于所述透明填充层21上；
平坦层M11，设置于所述内置封装层M19上。
在一种实施例中，透光区A2是指设置有透明填充层21的区域，该区域采用透明填充层21取代显示面板的结构层，增强了显示面板的光透过率。
在一种实施例中，透明填充层21可以是有机胶填充区等，这样外界光线即可穿过透光区，到达设置在屏下的电子元件，如摄像头、光线传感器等，使得这样电子元件实现对应的功能。
在一种实施例中，所述内置封装层M19的材料为氧化硅（SiOx）、氮氧化硅（SiONx）、氮化硅（SiNx）中的至少一种；其可以形成一层或者多层，以增强封装效果。
在一种实施例中，所述OLED显示面板包括衬底功能层以及设置在所述衬底功能层上的驱动电路功能层；所述衬底功能层和所述驱动电路功能层对应所述透光区的位置开设有第一通孔，所述透明填充层21填充在所述第一通孔内。
在一种实施例中，所述内置封装层覆盖M19所述透明填充层21后，与所述驱动电路功能层接触，如与电路功能层的上表面（例如绝缘层M9）接触。
在一种实施例中，所述OLED显示面板还包括设置在所述透光区对应位置的透明导电层M18，所述透明导电层设置于所述平坦层上。
在一种实施例中，所述平坦层在所述内置封装层的边缘设置有过孔，所述透明导电层形成于所述过孔内、以及所述过孔之间。
在一种实施例中，所述OLED显示面板还包括设置在所述平坦层上的发光功能层以及封装层；所述发光功能层对应所述透光区的位置开设有第三通孔，所述封装层填充所述第三通孔。
在一种实施例中，所述封装层包括层叠设置的第一无机封装层、第一有机封装层和第二无机封装层；所述第三通孔贯穿所述第一无机封装层，所述第一有机封装层填充所述第三通孔。
本实施例提供了一种OLED显示面板，该OLED显示面板包括对应电子元件位置的电子元件设置区、以及至少部分位于所述电子元件设置区内的透光区；所述透光区设置有透明填充层，内置封装层，设置于所述透明填充层上，平坦层，设置于所述内置封装层上；本申请在透光区内设置透明填充层，以取代部分膜层（尤其是对光线阻隔较大的膜层）材料，提高光线透过率，在实现摄像头等电子元件的内置式设计的同时，又不会如现有技术那样形成一个空洞，不存在难以封装的技术问题；同时，在透明填充层和平坦层之间增加内置封装层，降低了水氧通过透明填充层入侵器件内部的速度，延长了器件使用寿命。
电子元件3可以是一种电子元件，也可以是多种电子元件的集合体，如摄像头、光线传感器、基于红外线的指纹识别装置等，电子元件对应的电子元件设置区可以不设置发光像素，此时可以解决问题1，也可以设置发光像素，可以同时解决问题2。下文将针对这2个分支进行分析。
在一种实施例中，如图2所示，本实施例提供的OLED显示面板在电子元件设置区A1在与透光区A2对应的上面未设置发光像素，此时，所述透光区A2与所述电子元件设置区A1相同，即电子元件设置区A1都采用透光区A2的设置方式。
在一种实施例中，由于OLED显示面板在电子元件设置区A1在与透光区A2对应的上面未设置发光像素，电子元件设置区A1不具备显示功能，不能显示画面，进而不会导致器件发光影响电子元件的采光效果。
在一种实施例中，如图2和图3所示，在本申请的OLED显示面板中，所述OLED显示面板还包括围绕所述透光区的显示区（即显示面板的有效发光区）A3；所述OLED显示面板包括：
层叠设置的衬底功能层；
形成于所述衬底功能层上的驱动电路功能层；
形成于所述驱动电路功能层上的平坦层M11；
形成于所述平坦层M11上的发光功能层；
形成于所述发光功能层上的封装层。
在一种实施例中，衬底功能层和驱动电路功能层对应所述透光区A2的位置开设有第一通孔，即显示区A3内存在衬底功能层和驱动电路功能层，透光区A2内不存在衬底功能层和驱动电路功能层；此时，位于所述透光区内的透明填充层21的厚度，不小于位于所述标准显示区内的衬底功能层和驱动电路功能层的总厚度。
在一种实施例中，发光功能层对应所述透光区A2的位置开设有第三通孔，封装层填充所述第三通孔，即显示区A3内存在发光功能层，透光区A2内不存在发光功能层，位于所述透光区A2内的封装层的厚度，大于位于所述显示区A3内的封装层的厚度。
在一种实施例中，封装层包括层叠设置的第一无机封装层、第一有机封装层和第二无机封装层；所述第三通孔贯穿所述第一无机封装层，所述第一有机封装层填充所述第三通孔，即显示区A3内存在发光功能层和第一无机封装层，透光区A2内不存在发光功能层和第一无机封装层，位于所述透光区A2内的第一有机封装层的厚度，大于位于所述显示区A3内的第一有机封装层的厚度。
在一种实施例中，如图3所示，在所述显示区A3内，所述OLED显示面板从下至上依次包括：柔性衬底M1，缓冲阻隔层M2，无机缓冲阻隔层M3，低温多晶硅M4,第一栅极绝缘层M5，第一栅极M6，第二栅极绝缘层M7，第二栅极M8，绝缘层M9，漏极/漏极M10，平坦层M11，第一电极M12，像素隔离层M13，发光层和第二电极M14，第一无机封装层M15,第一有机封装层M16, 第二无机封装层M17。
此时，衬底功能层包括柔性衬底M1、缓冲阻隔层M2和无机缓冲层M3驱动电路功能层包括低温多晶硅M4、第一栅极绝缘层M5、第一栅极M6、第二栅极绝缘层M7、第二栅极M8、绝缘层M9、漏极/漏极M10；发光功能层包括第一电极M12、像素隔离层M13、发光层和第二电极M14；显示区A3内的封装层包括第一无机封装层M15、第二有机封装层M16、第二无机封装层M17；透光区A2内的第一封装层包括第二有机封装层M16和第二无机封装层M17。
在一种实施例中，如图3所示，在本申请的OLED显示面板中，所述OLED显示面板还包括弯折区A4；在所述弯折区A4内，所述OLED显示面板包括：柔性衬底M1，透明填充层21，漏极/漏极M10，平坦层M11，和像素隔离层M13。
在一种实施例中，如图3所示，在本申请的OLED显示面板中，在所述透光区内，所述OLED显示面板还包括透明导电层M18，所述透明导电层形成于所述平坦层上，所述第一有机封装层M16形成于所述透明导电层上。
在一种实施例中，透明导电层图案化形成有扫描线和数据线，扫描线用于连接位于透光区两侧同一行像素驱动晶体管的栅极，数据线用于连接位于透光区两侧同一列像素驱动晶体管的源极/漏极。
在一种实施例中，在本申请的OLED显示面板中，在所述透光区内，所述OLED显示面板不包括透明导电层，所述第一有机封装层M16形成于所述平坦层M11上。
在一种实施例中，如图3所示，在本申请的OLED显示面板中，在所述透光区内，所述OLED显示面板还包括内置封装层M19，所述内置封装层形成于所述透明填充层上，所述平坦层形成于所述内置封装层上。
在一种实施例中，在本申请的OLED显示面板中，在所述透光区内，所述OLED显示面板不包括内置封装层M19，所述平坦层形成于所述透明填充层上。
以电子元件为摄像头为例，OLED显示面板由下至上依次是聚酰亚胺类材料形成的柔性衬底（即上文中的M1），SiOx材料形成的缓冲阻隔层（即上文中的M2），SiN/SiOx等材料形成的无机缓冲层（即上文中的M3），低温多晶硅构成的低温多晶硅层（即上文中的M4），SiN/SiOx材料构成的第一栅极绝缘层（即上文中的M5），钼（Mo）等材料构成的第一栅极（即上文中的M6），SiN/SiOx构成的第二栅极绝缘层（即上文中的M7），Mo等材料构成的第二栅极（即上文中的M8），SiN/SiOx等绝缘层（即上文中的M9），钛铝钛（Ti/Al/Ti）构成的源极/漏极（即上文中的M10），开孔填充有机胶填充层（即上文中的21），SiN/SiOx/SiON等内置封装层（即上文中的M19），聚酰亚胺类材料形成的平坦层（即上文中的M11），ITO（导电玻璃）/Ag（银）/ITO构成的第一电极（即上文中的M12），聚酰亚胺类材料形成的像素隔离层（即上文中的M13），小分子或聚合物以及Mg（镁）/Ag等金属构成的发光层（即上文中的M14），SiNx、SiOx、SiONx、Al2O3（氧化铝）、TiOx（氧化钛）等材料构成的第一无机封装层（即上文中的M15），亚克力、环氧树脂或有机硅类构成的第一有机封装层（即上文中的M16）, SiNx、SiOx、SiONx、Al2O3、TiOx等材料构成的第二无机封装层（即上文中的M16）。
显示面板器件分为三个部分：显示区(Active Area，即显示区A3), 弯折区域(PB Area), 摄像头放置区域(CUP Area，即电子元件设置区A1)。其中：
在摄像头放置区域上方，柔性衬底，缓冲阻隔层，无机缓冲层，低温多晶硅层，第一栅极绝缘层，第一栅极，第二栅极绝缘层，第二栅极，绝缘层被全部去除，然后又用透明有机胶填充形成透明填充层，为了阻隔水氧从柔性衬底测的入侵，加入SiNx或SiOx或SiONx的内置封装层, 内置封装层上方为平坦层，平坦层层对应内置封装层的两侧开孔，沉积ITO层（与AND层ITO/Ag/ITO同步制作，但去掉Ag）作为透明电极（用于形成图案化的扫描线和数据线），ITO上方为第一有机封装层r, 第二无机封装层。
在一种实施例中，如图4所示，在本申请的OLED显示面板中，在所述透光区内，所述OLED显示面板还包括加强透明填充层22，设置在平坦层M11和封装层之间。
在一种实施例中，加强透明填充层22可以是有机胶填充层等。
在一种实施例中，如图4所示，所述加强透明填充层22形成于所述透明导电层M18之上，所述封装层形成于所述加强透明填充层22之上。
在一种实施例中，所述加强透明填充层22形成于所述平坦层M11之上，所述封装层形成于所述加强透明填充层22之上。
图4所示实施例可以进一步加强透光区的光线透过率。
在一种实施例中，如图5所示，在本申请的OLED显示面板中，在所述透光区内，封装层包括第一无机封装层M15、第二有机封装层M16、第二无机封装层M17；所述第一无机封装层M15形成于所述加强透明填充层22之上。
在一种实施例中，在本申请的OLED显示面板中，在所述透光区内，封装层包括第一无机封装层M15、第二有机封装层M16、第二无机封装层M17；所述第一无机封装层M15形成于所述透明导电层之上。
在一种实施例中，在本申请的OLED显示面板中，在所述透光区内，所述OLED显示面板包括加强透明填充层22，所述第一封装层包括第一无机封装层M15、第二有机封装层M16、第二无机封装层M17，加强透明填充层22形成于所述平坦层M11之上，所述第一无机封装层M15形成于所述加强透明填充层22之上。
在一种实施例中，在本申请的OLED显示面板中，在所述透光区内，所述OLED显示面板包括透明导电层、加强透明填充层22，封装层包括第一无机封装层M15、第二有机封装层M16、第二无机封装层M17，透明导电层形成于所述平坦层M11之上，加强透明填充层22形成于所述透明导电层M11之上，所述第一无机封装层M15形成于所述加强透明填充层22之上。
在一种实施例中，如图6及图7所示，本实施例提供的OLED显示面板在电子元件设置区A1内还包括设置在所述透光区A2上的发光像素阵列，至少部分所述发光像素之间设有第二通孔，所述第二通孔内填充有透明填充层21，此时，电子元件设置区A1具备显示功能，可以显示画面。发光像素阵列包括图6中陈列排布的子像素4，此时，为了不影响电子元件设置区A1内发光像素阵列的正常发光，透光区A2填充在所述发光像素阵列的相邻像素之间；为便于下文描述，将子像素4对应的区域记为发光区A5。
在一种实施例中，电子元件设置区A1内发光像素阵列的像素密度，小于显示区A3内发光像素阵列的像素密度，这样可以进一步的增强电子元件设置区A1的透光效果。
在一种实施例中，如图7所示，在本申请的OLED显示面板中，所述OLED显示面板包括：
层叠设置的衬底功能层；
形成于所述衬底功能层上的驱动电路功能层；
形成于所述驱动电路功能层上的平坦层M11；
形成于所述平坦层M11上的发光功能层；
形成于所述发光功能层上的封装层。
在一种实施例中，衬底功能层和驱动电路功能层对应所述透光区A2的位置开设有第一通孔，即发光区A5内存在衬底功能层和驱动电路功能层，透光区A2内不存在衬底功能层和驱动电路功能层；此时，位于所述透光区内的透明填充层21的厚度，不小于位于所述标准显示区内的衬底功能层和驱动电路功能层的总厚度。
在一种实施例中，发光功能层对应所述透光区A2的位置开设有第三通孔，封装层填充所述第三通孔，即发光区A5内存在发光功能层，透光区A2内不存在发光功能层，位于所述透光区A2内的封装层的厚度，大于位于所述发光区A5内的封装层的厚度。
在一种实施例中，为了进一步增大透光区A2的透光效果，在本申请的OLED显示面板中，所述电子元件设置区内的发光像素的电极层为透明导电层。
在一种实施例中，如图7所示，在所述发光区A5内，所述OLED显示面板从下至上依次包括：
柔性衬底M1，缓冲阻隔层M2，无机缓冲层M3，低温多晶硅M4,第一栅极绝缘层M5，第一栅极M6，第二栅极绝缘层M7，第二栅极M8，绝缘层M9，漏极/漏极M10，平坦层M11，第一电极M12，像素隔离层M13，发光层和第二电极M14，第一无机封装层M15,第一有机封装层M16, 第二无机封装层M17。
此时，衬底功能层包括柔性衬底M1、缓冲阻隔层M2和无机缓冲层M3驱动电路功能层包括低温多晶硅M4、第一栅极绝缘层M5、第一栅极M6、第二栅极绝缘层M7、第二栅极M8、绝缘层M9、漏极/漏极M10；发光功能层包括第一电极M12、像素隔离层M13、发光层和第二电极M14；显示区A3内的封装层包括第一无机封装层M15、第二有机封装层M16、第二无机封装层M17；透光区A2内的第一封装层包括第二有机封装层M16和第二无机封装层M17。
在一种实施例中，如图7所示，在本申请的OLED显示面板中，在所述透光区内，所述OLED显示面板还包括透明导电层M18，所述透明导电层形成于所述平坦层上，封装层形成于所述透明导电层上。
在一种实施例中，透明导电层图案化形成有扫描线和数据线；位于同一行子像素之间的透明导电层图案化形成扫描线，用于连接位于透光区两侧同一行像素驱动晶体管的栅极，位于同一列子像素之间的透明导电层图案化形成数据线，用于连接位于透光区两侧同一列像素驱动晶体管的源极/漏极。
在一种实施例中，在本申请的OLED显示面板中，在所述透光区内，所述OLED显示面板不包括透明导电层，封装层形成于所述平坦层上。
在一种实施例中，如图7所示，在本申请的OLED显示面板中，在所述透光区内，所述OLED显示面板还包括内置封装层M19，所述内置封装层形成于所述透明填充层上，所述平坦层形成于所述内置封装层上。
在一种实施例中，在本申请的OLED显示面板中，在所述透光区内，所述OLED显示面板不包括内置封装层M19，所述平坦层形成于所述透明填充层上。
以电子元件为大尺寸摄像头为例，OLED显示面板由下至上依次是聚酰亚胺类材料形成的柔性衬底（即上文中的M1），SiOx材料形成的缓冲阻隔层（即上文中的M2），SiN/SiOx等材料形成的无机缓冲层（即上文中的M3），低温多晶硅构成的低温多晶硅层（即上文中的M4），SiN/SiOx材料构成的第一栅极绝缘层（即上文中的M5），钼（Mo）等材料构成的第一栅极（即上文中的M6），SiN/SiOx构成的第二栅极绝缘层（即上文中的M7），Mo等材料构成的第二栅极（即上文中的M8），SiN/SiOx等绝缘层（即上文中的M9），钛铝钛（Ti/Al/Ti）构成的源极/漏极（即上文中的M10），开孔填充有机胶填充层（即上文中的21），SiN/SiOx/SiON等内置封装层（即上文中的M19），聚酰亚胺类材料形成的平坦层（即上文中的M11），ITO（导电玻璃）/Ag（银）/ITO构成的第一电极（即上文中的M12），聚酰亚胺类材料形成的像素隔离层（即上文中的M13），小分子或聚合物以及Mg（镁）/Ag等金属构成的发光层（即上文中的M14），SiNx、SiOx、SiONx、Al2O3（氧化铝）、TiOx（氧化钛）等材料构成的第一无机封装层（即上文中的M15），亚克力、环氧树脂或有机硅类构成的第一有机封装层（即上文中的M16）, SiNx、SiOx、SiONx、Al2O3、TiOx等材料构成的第二无机封装层（即上文中的M16）。
显示面板分为三个部分：显示区域(Active Area), 弯折区域(PB Area), 摄像头放置区域(CUP Area)；其中：
在摄像头放置区域上方，柔性衬底，缓冲阻隔层，无机缓冲层，低温多晶硅层，第一栅极绝缘层，第一栅极，第二栅极绝缘层，第二栅极，绝缘层被全部去除，然后又用透明有机胶填充形成透明填充层，为了阻隔水氧从柔性衬底测的入侵，加入SiNx或SiOx或SiONx的内置封装层, 内置封装层上方为平坦层，平坦层层对应内置封装层的两侧开孔，沉积ITO层（与AND层ITO/Ag/ITO同步制作，但去掉Ag）作为透明电极（用于形成图案化的扫描线和数据线），ITO上方为第一有机封装层r, 第二无机封装层。
图7所示实施例与图3所示实施例类似，区别在于图3所示实施例是整个CUP区域PI等衬底功能层和驱动电路功能层都去掉，用有机透明胶等填充，图7所示实施例则是CUP区域内有显示作用的像素Pixel对应区域（即上文中的发光区A5）保持不变，而非pixel区域（即上文中的透光区A2）的柔性衬底，缓冲阻隔层，无机缓冲层，低温多晶硅层，第一栅极绝缘层，第一栅极，第二栅极绝缘层，第二栅极，绝缘层被全部去除，然后用透明有机胶填充形成透明填充层，为了阻隔水氧从柔性衬底测的入侵，加入SiNx或SiOx或SiONx的内置封装层, 内置封装层上方为平坦层，平坦层层对应内置封装层的两侧开孔，沉积ITO层（与AND层ITO/Ag/ITO同步制作，但去掉Ag）作为透明电极（用于形成图案化的扫描线和数据线），ITO上方为第一有机封装层r, 第二无机封装层。
在一种实施例中，为了进一步增大电子元件设置区的光线透过率，在本申请的OLED显示面板中，所述电子元件设置区内的发光像素的电极层为透明导电层，如ITO等。
在一种实施例中，如图8所示，可以设置多个内置封装层，为便于描述，分别记为第一内置封装层M19a和第二内置封装层M19b，第一内置封装层M19a设置在透光区内与衬底功能层与驱动电路功能层交界的对应位置，起到第一次防护作用，第二内置封装层M19b设置在透光区内与驱动电路功能层和平坦层交界的对应位置，起到第一次防护作用。
在一种实施例中，如图9所示，透光区内的封装层与其他区域内的封装层完全相同，此时，发光功能层对应所述透光区的位置开设有第三通孔，第三通孔内填充有加强透明填充层22，封装层形成于加强透明填充层22和发光功能层之上。
同时，在一种实施例中，本申请还提供一种显示装置，如柔性显示装置等，其包括本申请提供的OLED显示面板，可以实现全面屏，其OLED显示面板包括对应电子元件位置的电子元件设置区、以及至少部分位于所述电子元件设置区内的透光区，所述透光区设置有透明填充层；所述OLED显示面板包括：
内置封装层，设置于所述透明填充层上；
平坦层，设置于所述内置封装层上。
在一种实施例中，在本申请的显示装置中，所述内置封装层的材料为氧化硅、氮氧化硅、氮化硅中的至少一种。
在一种实施例中，在本申请的显示装置中，所述OLED显示面板包括衬底功能层以及设置在所述衬底功能层上的驱动电路功能层；所述衬底功能层和所述驱动电路功能层对应所述透光区的位置开设有第一通孔，所述透明填充层填充在所述第一通孔内。
在一种实施例中，在本申请的显示装置中，所述内置封装层覆盖所述透明填充层后，与所述驱动电路功能层接触。
在一种实施例中，在本申请的显示装置中，所述电子元件设置区内未设置发光像素，所述透光区与所述电子元件设置区相同。
在一种实施例中，在本申请的显示装置中，所述电子元件设置区内设置发光像素阵列，所述透光区填充在所述发光像素阵列的相邻像素之间。
在一种实施例中，在本申请的显示装置中，所述OLED显示面板还包括设置在所述透光区对应位置的透明导电层，所述透明导电层设置于所述平坦层上。
在一种实施例中，在本申请的显示装置中，所述平坦层在所述内置封装层的边缘设置有过孔，所述透明导电层形成于所述过孔内、以及所述过孔之间。
在一种实施例中，在本申请的显示装置中，所述OLED显示面板还包括设置在所述平坦层上的发光功能层以及封装层；所述发光功能层对应所述透光区的位置开设有第三通孔，所述封装层填充所述第三通孔。
在一种实施例中，在本申请的显示装置中，所述封装层包括层叠设置的第一无机封装层、第一有机封装层和第二无机封装层；所述第三通孔贯穿所述第一无机封装层，所述第一有机封装层填充所述第三通孔。
根据以上实施例可知：
本申请提供一种OLED显示面板以及显示装置，该OLED显示面板包括对应电子元件位置的电子元件设置区、以及至少部分位于所述电子元件设置区内的透光区；所述透光区设置有透明填充层，内置封装层，设置于所述透明填充层上，平坦层，设置于所述内置封装层上；本申请在透光区内设置透明填充层，以取代部分膜层（尤其是对光线阻隔较大的膜层）材料，提高光线透过率，在实现摄像头等电子元件的内置式设计的同时，又不会如现有技术那样形成一个空洞，不存在难以封装的技术问题；同时，在透明填充层和平坦层之间增加内置封装层，降低了水氧通过透明填充层入侵器件内部的速度，延长了器件使用寿命。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (20)

  1. 一种OLED显示面板，其包括对应电子元件位置的电子元件设置区、以及至少部分位于所述电子元件设置区内的透光区，所述透光区设置有透明填充层；所述OLED显示面板包括：
    内置封装层，设置于所述透明填充层上；
    平坦层，设置于所述内置封装层上。
  2. 如权利要求1所述的OLED显示面板，其中，所述内置封装层的材料为氧化硅、氮氧化硅、氮化硅中的至少一种。
  3. 如权利要求1所述的OLED显示面板，其中，所述OLED显示面板包括衬底功能层以及设置在所述衬底功能层上的驱动电路功能层；所述衬底功能层和所述驱动电路功能层对应所述透光区的位置开设有第一通孔，所述透明填充层填充在所述第一通孔内。
  4. 如权利要求3所述的OLED显示面板，其中，所述内置封装层覆盖所述透明填充层后，与所述驱动电路功能层接触。
  5. 如权利要求1所述的OLED显示面板，其中，所述电子元件设置区在与所述透光区对应的上面未设置发光像素。
  6. 如权利要求1所述的OLED显示面板，其中，所述电子元件设置区还包括设置在所述透光区上的发光像素阵列，至少部分所述发光像素之间设有第二通孔，所述第二通孔内填充有透明填充层。
  7. 如权利要求1所述的OLED显示面板，其中，所述OLED显示面板还包括设置在所述透光区对应位置的透明导电层，所述透明导电层设置于所述平坦层上。
  8. 如权利要求7所述的OLED显示面板，其中，所述平坦层在所述内置封装层的边缘设置有过孔，所述透明导电层形成于所述过孔内、以及所述过孔之间。
  9. 如权利要求1所述的OLED显示面板，其中，所述OLED显示面板还包括设置在所述平坦层上的发光功能层以及封装层；所述发光功能层对应所述透光区的位置开设有第三通孔，所述封装层填充所述第三通孔。
  10. 如权利要求9所述的OLED显示面板，其中，所述封装层包括层叠设置的第一无机封装层、第一有机封装层和第二无机封装层；所述第三通孔贯穿所述第一无机封装层，所述第一有机封装层填充所述第三通孔。
  11. 一种显示装置，其包括OLED显示面板，所述OLED显示面板包括对应电子元件位置的电子元件设置区、以及至少部分位于所述电子元件设置区内的透光区，所述透光区设置有透明填充层；所述OLED显示面板包括：
    内置封装层，设置于所述透明填充层上；
    平坦层，设置于所述内置封装层上。
  12. 如权利要求11所述的显示装置，其中，所述内置封装层的材料为氧化硅、氮氧化硅、氮化硅中的至少一种。
  13. 如权利要求11所述的显示装置，其中，所述OLED显示面板包括衬底功能层以及设置在所述衬底功能层上的驱动电路功能层；所述衬底功能层和所述驱动电路功能层对应所述透光区的位置开设有第一通孔，所述透明填充层填充在所述第一通孔内。
  14. 如权利要求13所述的显示装置，其中，所述内置封装层覆盖所述透明填充层后，与所述驱动电路功能层接触。
  15. 如权利要求11所述的显示装置，其中，所述电子元件设置区在与所述透光区对应的上面未设置发光像素。
  16. 如权利要求11所述的显示装置，其中，所述电子元件设置区还包括设置在所述透光区上的发光像素阵列，至少部分所述发光像素之间设有第二通孔，所述第二通孔内填充有透明填充层。
  17. 如权利要求11所述的显示装置，其中，所述OLED显示面板还包括设置在所述透光区对应位置的透明导电层，所述透明导电层设置于所述平坦层上。
  18. 如权利要求17所述的显示装置，其中，所述平坦层在所述内置封装层的边缘设置有过孔，所述透明导电层形成于所述过孔内、以及所述过孔之间。
  19. 如权利要求11所述的显示装置，其中，所述OLED显示面板还包括设置在所述平坦层上的发光功能层以及封装层；所述发光功能层对应所述透光区的位置开设有第三通孔，所述封装层填充所述第三通孔。
  20. 如权利要求19所述的显示装置，其中，所述封装层包括层叠设置的第一无机封装层、第一有机封装层和第二无机封装层；所述第三通孔贯穿所述第一无机封装层，所述第一有机封装层填充所述第三通孔。
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