WO2019244815A1 - Module haute fréquence et dispositif de communication - Google Patents

Module haute fréquence et dispositif de communication Download PDF

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Publication number
WO2019244815A1
WO2019244815A1 PCT/JP2019/023804 JP2019023804W WO2019244815A1 WO 2019244815 A1 WO2019244815 A1 WO 2019244815A1 JP 2019023804 W JP2019023804 W JP 2019023804W WO 2019244815 A1 WO2019244815 A1 WO 2019244815A1
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Prior art keywords
frequency
reception
transmission
frequency signal
transmission power
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PCT/JP2019/023804
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English (en)
Japanese (ja)
Inventor
孝紀 上嶋
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株式会社村田製作所
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Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to CN201990000784.4U priority Critical patent/CN214069915U/zh
Priority to KR1020207034961A priority patent/KR102420284B1/ko
Publication of WO2019244815A1 publication Critical patent/WO2019244815A1/fr
Priority to US17/118,610 priority patent/US11303308B2/en

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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/006—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using switches for selecting the desired band
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/005—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges
    • H04B1/0053—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band
    • H04B1/0057—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission adapting radio receivers, transmitters andtransceivers for operation on two or more bands, i.e. frequency ranges with common antenna for more than one band using diplexing or multiplexing filters for selecting the desired band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B1/0475—Circuits with means for limiting noise, interference or distortion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/06—Receivers
    • H04B1/10—Means associated with receiver for limiting or suppressing noise or interference
    • H04B1/1018—Means associated with receiver for limiting or suppressing noise or interference noise filters connected between the power supply and the receiver
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/44—Transmit/receive switching
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/50—Circuits using different frequencies for the two directions of communication
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H04B1/54—Circuits using the same frequency for two directions of communication
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/111—Indexing scheme relating to amplifiers the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7209—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched from a first band to a second band
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02—Transmitters
    • H04B1/04—Circuits
    • H04B2001/0408—Circuits with power amplifiers
    • H04B2001/0416—Circuits with power amplifiers having gain or transmission power control

Definitions

  • the present invention relates to a high-frequency module and a communication device.
  • Patent Document 1 discloses a high-frequency radio (high-frequency module) having a configuration in which a low-noise amplifier (reception low-noise amplifier) of a reception system and a power amplifier (transmission power amplifier) of a transmission system are connected via an antenna switch.
  • a low-noise amplifier reception low-noise amplifier
  • a power amplifier transmission power amplifier
  • Each of the low-noise amplifier and the power amplifier is composed of, for example, a multi-stage amplifying element.
  • the transceiver (transmitter / receiver circuit) disclosed in Patent Document 1 is configured as a front-end circuit (high-frequency module) of a mobile communication device by one module, a transmission power amplifier is configured by a multistage amplifying element in order to increase output. With this configuration, there is a problem that the high-frequency module becomes large.
  • the present invention has been made to solve the above problems, and has as its object to provide a miniaturized high-frequency module and a communication device having a transmission power amplifier composed of multi-stage amplification elements.
  • a high-frequency module includes a first transmission power amplifier having a plurality of amplifying elements connected in multiple stages, and a first main surface and a second main surface facing each other. And a module substrate on which the first transmission power amplifier is mounted, wherein the plurality of amplifying elements are more than the first amplifying element disposed at the last stage of the plurality of amplifying elements and the first amplifying element.
  • the present invention it is possible to provide a miniaturized high-frequency module and a communication device having a transmission power amplifier composed of multi-stage amplification elements.
  • FIG. 1 is a circuit configuration diagram of the high-frequency module according to the embodiment.
  • FIG. 2A is a schematic plan view of the high-frequency module according to the embodiment.
  • FIG. 2B is a schematic cross-sectional configuration diagram of the high-frequency module according to the embodiment.
  • FIG. 3 is a schematic cross-sectional configuration diagram of a high-frequency module according to Modification Example 1 of the embodiment.
  • FIG. 4 is a schematic cross-sectional configuration diagram of a high-frequency module according to Modification 2 of the embodiment.
  • FIG. 1 is a circuit configuration diagram of the high-frequency module 1 according to the first embodiment.
  • the communication device 5 includes a high-frequency module 1, an antenna element 2, an RF signal processing circuit (RFIC) 3, and a baseband signal processing circuit (BBIC) 4.
  • RFIC RF signal processing circuit
  • BBIC baseband signal processing circuit
  • the RFIC 3 is an RF signal processing circuit that processes a high-frequency signal transmitted and received by the antenna element 2. Specifically, the RFIC 3 performs signal processing on the high-frequency reception signal input via the reception path of the high-frequency module 1 by down-conversion or the like, and outputs the reception signal generated by the signal processing to the BBIC 4. The RFIC 3 performs signal processing on the transmission signal input from the BBIC 4 by up-conversion or the like, and outputs a high-frequency transmission signal generated by the signal processing to the transmission path of the high-frequency module 1.
  • the BBIC 4 is a circuit that performs signal processing using an intermediate frequency band that is lower in frequency than the high frequency signal propagating through the high frequency module 1.
  • the signal processed by the BBIC 4 is used, for example, as an image signal for displaying an image, or as an audio signal for a telephone call via a speaker.
  • the RFIC 3 also has a function as a control unit that controls the connection of the switches 51, 52, 53, 54, and 55 of the high-frequency module 1 based on the communication band (frequency band) used. Specifically, the RFIC 3 switches the connection of the switches 51 to 55 included in the high-frequency module 1 according to a control signal (not shown).
  • the control unit may be provided outside the RFIC 3, for example, may be provided in the high-frequency module 1 or the BBIC 4.
  • the antenna element 2 is connected to the common terminal 100 of the high-frequency module 1 and radiates a high-frequency signal output from the high-frequency module 1, receives an external high-frequency signal, and outputs the signal to the high-frequency module 1.
  • the antenna element 2 and the BBIC 4 are not essential components.
  • the high-frequency module 1 includes a common terminal 100, transmission input terminals 110 and 120, reception output terminals 130 and 140, transmission power amplifiers 11 and 12, reception low noise amplifiers 21 and 22,
  • the common terminal 100 is connected to the antenna element 2.
  • the transmission power amplifier 11 receives a high-frequency signal from the transmission input terminal 110 and preferentially amplifies the high-frequency signals of the communication band A (first communication band) and the communication band B belonging to the first frequency band group.
  • a first transmission power amplifier that outputs the high-frequency signal to the common terminal 100.
  • the transmission power amplifier 12 receives a high-frequency signal from the transmission input terminal 120 and receives a high-frequency signal of a communication band C (second communication band) and a communication band D belonging to a second frequency band group higher in frequency than the first frequency band group. Is a second transmission power amplifier that preferentially amplifies and outputs the amplified high-frequency signal to the common terminal 100.
  • the transmission power amplifiers 11 and 12 are, for example, power amplifiers.
  • the transmission power amplifier 11 has an amplifier input terminal 111 and an amplifier output terminal 112, and amplification elements 11A and 11B.
  • the amplifier elements 11A and 11B are connected between the amplifier input terminal 111 and the amplifier output terminal 112, and are connected in multiple stages (cascade connection).
  • the amplifying element 11B is a first amplifying element arranged at a stage subsequent to the amplifying elements 11A and 11B, and the amplifying element 11A is a second amplifying element arranged at a stage preceding the amplifying element 11B.
  • the transmission power amplifier 12 has an amplifier input terminal 121, an amplifier output terminal 122, and amplification elements 12A and 12B.
  • the amplifier elements 12A and 12B are connected between the amplifier input terminal 121 and the amplifier output terminal 122, and are connected in multiple stages (cascade connection).
  • the amplifying element 12B is a first amplifying element arranged at a stage subsequent to the amplifying elements 12A and 12B, and the amplifying element 12A is a second amplifying element arranged at a stage preceding the amplifying element 12B.
  • Each of the amplifying elements 11A, 11B, 12A, and 12B is formed of, for example, a CMOS (Complementary Metal Oxide Semiconductor) field effect transistor containing Si, a field effect transistor made of GaAs, or a bipolar transistor. .
  • the high-frequency module 1 can be manufactured at low cost by configuring the amplifying elements 11A and 12A that do not require power handling with CMOS containing Si.
  • the amplifying elements 11B and 12B having a high power level of the high-frequency transmission signal are made of a GaAs-based material, it is possible to output a high-frequency transmission signal having high-quality amplification characteristics and noise characteristics.
  • amplifying elements 11A and 12A which do not require power handling, are connected to switches 51 to 55, switches 51 to 55, and control units for controlling the amplification factors of transmission power amplifiers 11, 12 and reception low noise amplifiers 21, 22.
  • one chip may be formed using CMOS containing Si.
  • the high-frequency module 1 can be reduced in size.
  • each of the transmission power amplifiers 11 and 12 is composed of two stages of amplifying elements, but may be composed of three or more stages of amplifying elements. That is, each of the first transmission power amplifier and the second transmission power amplifier may include a plurality of amplification elements of three or more stages.
  • the amplifying element arranged at the last stage of the plurality of amplifiers is a first amplifying element
  • the amplifying element arranged at a stage preceding the first amplifying element is a second amplifying element.
  • the receiving low-noise amplifier 21 is a first receiving low-noise amplifier that amplifies high-frequency signals of the communication band A and the communication band B with low noise.
  • the reception low-noise amplifier 22 is a second reception low-noise amplifier that amplifies high-frequency signals of the communication band C and the communication band D with low noise.
  • the reception low noise amplifiers 21 and 22 are, for example, low noise amplifiers.
  • the transmission filter 61T is disposed in a transmission path connecting the transmission power amplifier 11 and the common terminal 100, and allows a high-frequency signal in the transmission band of the communication band A among the high-frequency signals amplified by the transmission power amplifier 11 to pass.
  • the transmission filter 62T is disposed in a transmission path connecting the transmission power amplifier 11 and the common terminal 100, and allows a high-frequency signal in the transmission band of the communication band B among the high-frequency signals amplified by the transmission power amplifier 11 to pass.
  • the transmission filter 63T is arranged in a transmission path connecting the transmission power amplifier 12 and the common terminal 100, and allows a high-frequency signal in the transmission band of the communication band C among the high-frequency signals amplified by the transmission power amplifier 12 to pass.
  • the transmission filter 64T is disposed in a transmission path connecting the transmission power amplifier 12 and the common terminal 100, and allows a high-frequency signal in the transmission band of the communication band D among the high-frequency signals amplified by the transmission power amplifier 12 to pass.
  • the reception filter 61R is disposed in a reception path connecting the reception low-noise amplifier 21 and the common terminal 100, and allows a high-frequency signal in the reception band of the communication band A among high-frequency signals input from the common terminal 100 to pass.
  • the reception filter 62R is arranged in a reception path connecting the reception low-noise amplifier 21 and the common terminal 100, and passes a high-frequency signal in the reception band of the communication band B among high-frequency signals input from the common terminal 100.
  • the reception filter 63R is arranged on a reception path connecting the reception low-noise amplifier 22 and the common terminal 100, and allows a high-frequency signal in the reception band of the communication band C among high-frequency signals input from the common terminal 100 to pass.
  • the reception filter 64R is arranged in a reception path connecting the reception low-noise amplifier 22 and the common terminal 100, and allows a high-frequency signal in the reception band of the communication band D among high-frequency signals input from the common terminal 100 to pass.
  • the transmission filters 61T to 64T and the reception filters 61R to 64R are, for example, any of a surface acoustic wave filter, an elastic wave filter using BAW (Bulk Acoustic Wave), an LC resonance filter, and a dielectric filter.
  • BAW Bulk Acoustic Wave
  • LC resonance filter LC resonance filter
  • dielectric filter a dielectric filter
  • the transmission filter 61T and the reception filter 61R constitute a duplexer 61 having the communication band A as a pass band. Further, the transmission filter 62T and the reception filter 62R constitute a duplexer 62 having the communication band B as a pass band. Further, the transmission filter 63T and the reception filter 63R constitute a duplexer 63 having the communication band C as a pass band. Further, the transmission filter 64T and the reception filter 64R constitute a duplexer 64 having the communication band D as a pass band.
  • the transmission output matching circuit 30 includes matching circuits 31 and 32.
  • Matching circuit 31 is arranged on the transmission path between transmission power amplifier 11 and transmission filters 61T and 62T, and performs impedance matching between transmission power amplifier 11 and transmission filters 61T and 62T.
  • Matching circuit 32 is arranged in the transmission path between transmission power amplifier 12 and transmission filters 63T and 64T, and performs impedance matching between transmission power amplifier 12 and transmission filters 63T and 64T.
  • the reception input matching circuit 40 has matching circuits 41 and 42.
  • the matching circuit 41 is arranged in a reception path between the reception low noise amplifier 21 and the reception filters 61R and 62R, and performs impedance matching between the reception low noise amplifier 21 and the reception filters 61R and 62R.
  • the matching circuit 42 is arranged on the reception path between the reception low noise amplifier 22 and the reception filters 63R and 64R, and performs impedance matching between the reception low noise amplifier 22 and the reception filters 63R and 64R.
  • the switch 51 is a first switch that is arranged in a transmission path connecting the matching circuit 31 and the transmission filters 61T and 62T, and that switches between conduction and non-conduction between the common terminal 100 and the transmission power amplifier 11. More specifically, switch 51 switches the connection between transmission power amplifier 11 and transmission filter 61T and the connection between transmission power amplifier 11 and transmission filter 62T.
  • the switch 51 is, for example, an SPDT (Single Pole Double Double Throw) type having a common terminal connected to the matching circuit 31, one selection terminal connected to the transmission filter 61T, and the other selection terminal connected to the transmission filter 62T. It is composed of a switch circuit.
  • the switch 52 is a first switch that is arranged on a transmission path connecting the matching circuit 32 and the transmission filters 63T and 64T, and that switches between conduction and non-conduction between the common terminal 100 and the transmission power amplifier 12. More specifically, switch 52 switches the connection between transmission power amplifier 12 and transmission filter 63T and the connection between transmission power amplifier 12 and transmission filter 64T.
  • the switch 52 includes, for example, an SPDT-type switch circuit in which a common terminal is connected to the matching circuit 32, one selection terminal is connected to the transmission filter 63T, and the other selection terminal is connected to the transmission filter 64T.
  • the switch 53 is a second switch that is disposed in a reception path connecting the matching circuit 41 and the reception filters 61R and 62R and that switches between conduction and non-conduction between the common terminal 100 and the reception low noise amplifier 21. More specifically, the switch 53 switches the connection between the reception low noise amplifier 21 and the reception filter 61R and the connection between the reception low noise amplifier 21 and the reception filter 62R.
  • the switch 53 includes, for example, an SPDT-type switch circuit in which a common terminal is connected to the matching circuit 41, one selection terminal is connected to the reception filter 61R, and the other selection terminal is connected to the reception filter 62R.
  • the switch 54 is a second switch that is disposed in a reception path connecting the matching circuit 42 and the reception filters 63R and 64R, and switches conduction and non-conduction between the common terminal 100 and the reception low noise amplifier 22. More specifically, the switch 54 switches the connection between the reception low noise amplifier 22 and the reception filter 63R and the connection between the reception low noise amplifier 22 and the reception filter 64R.
  • the switch 54 includes, for example, an SPDT-type switch circuit in which a common terminal is connected to the matching circuit 42, one selection terminal is connected to the reception filter 63R, and the other selection terminal is connected to the reception filter 64R.
  • the switch 55 is disposed in a signal path connecting the common terminal 100 to the transmission filters 61T to 64T and the reception filters 61R to 64R, and switches a conduction and non-conduction between the common terminal 100 and the transmission power amplifier 11, and This is a second switch for switching between conduction and non-conduction between the common terminal 100 and the reception low noise amplifier 21. More specifically, the switch 55 includes (1) connection between the common terminal 100 and the duplexer 61, (2) connection between the common terminal 100 and the duplexer 62, (3) connection between the common terminal 100 and the duplexer 63, and (4) The connection between the common terminal 100 and the duplexer 64 is switched.
  • the switch 55 may be configured by a switch circuit that performs only one of the connections (1) to (4), and may be a switch circuit that connects two or more of the connections (1) to (4). May be configured by a multi-connection type switch circuit capable of performing the operations at the same time.
  • the matching circuit 71 is arranged in a path connecting the switch 55 with the transmission filter 61T and the reception filter 61R, and performs impedance matching between the antenna element 2 and the switch 55 and the transmission filter 61T and the reception filter 61R.
  • the matching circuit 72 is arranged on a path connecting the switch 55 to the transmission filter 62T and the reception filter 62R, and performs impedance matching between the antenna element 2 and the switch 55 and the transmission filter 62T and the reception filter 62R.
  • the matching circuit 73 is arranged in a path connecting the switch 55 with the transmission filter 63T and the reception filter 63R, and performs impedance matching between the antenna element 2 and the switch 55 and the transmission filter 63T and the reception filter 63R.
  • the matching circuit 74 is arranged on a path connecting the switch 55 to the transmission filter 64T and the reception filter 64R, and performs impedance matching between the antenna element 2 and the switch 55 and the transmission filter 64T and the reception filter 64R.
  • the high-frequency module according to the present invention may be any high-frequency module that amplifies a high-frequency signal of the first frequency band group and outputs the amplified high-frequency signal.
  • the transmission power amplifier 11 is an essential component. . Therefore, the common terminal 100, the transmission input terminal 110, the reception low noise amplifiers 21 and 22, the transmission output matching circuit 30, the reception input matching circuit 40, the transmission filters 61T to 64T, the reception filters 61R to 64R, the switches 51 to 55, and the matching
  • the circuits 71 to 74 and the reception output terminals 130 and 140 are not essential components of the high-frequency module according to the present invention. That is, the system may transmit a high-frequency signal of a single communication band without transmitting, receiving, and simultaneously transmitting and receiving high-frequency signals of two or more communication bands.
  • the transmission power amplifier 11, the matching circuit 31, the switch 51, and the transmission filters 61 ⁇ / b> T and 62 ⁇ / b> T output the high-frequency signals of the communication band A and the communication band B toward the common terminal 100.
  • the transmission power amplifier 12, the matching circuit 32, the switch 52, and the transmission filters 63T and 64T constitute a second transmission circuit that outputs high-frequency signals of the communication band C and the communication band D to the common terminal 100.
  • the first transmission circuit and the second transmission circuit constitute a transmission circuit that outputs high-frequency transmission signals of communication bands A to D toward common terminal 100.
  • reception low noise amplifier 21, the matching circuit 41, the switch 53, and the reception filters 61R and 62R are configured to receive the high-frequency signals of the communication band A and the communication band B from the antenna element 2 via the common terminal 100 and to receive the first reception signal.
  • the reception low-noise amplifier 22, the matching circuit 42, the switch 54, and the reception filters 63R and 64R are configured to receive the high-frequency signals of the communication band C and the communication band D from the antenna element 2 via the common terminal 100.
  • the first receiving circuit and the second receiving circuit constitute a receiving circuit that inputs high-frequency signals of the communication bands A to D from the common terminal 100.
  • the high-frequency module 1 includes a high-frequency signal of any one of the communication bands A and B and a high-frequency signal of any one of the communication bands C and D. It is possible to execute at least one of simultaneous transmission, simultaneous reception, and simultaneous transmission and reception of a high-frequency signal.
  • the number of components of the high-frequency module 1 increases because each of the transmission power amplifiers 11 and 12 is configured by a multi-stage amplification element. For this reason, the conventional high-frequency module is increased in size. Further, in order to mount these circuit elements on one substrate, the multi-stage amplification elements are arranged close to each other to suppress signal transmission loss, and to suppress mutual interference between the multi-stage amplification elements. It is difficult to achieve both. That is, in a high-frequency module in which circuit elements are mounted on a single substrate, it is difficult to reduce the size while ensuring good amplification characteristics of a transmission power amplifier composed of multi-stage amplifier elements.
  • the high-frequency module 1 even if it has the transmission power amplifiers 11 and 12 composed of multi-stage amplification elements, it is possible to reduce the size (area saving). Furthermore, the signal transmission loss of the transmission power amplifiers 11 and 12 is suppressed, and the mutual interference between the amplification elements 11A and 11B of the transmission power amplifier 11 and the mutual interference between the amplification elements 12A and 12B of the transmission power amplifier 12 are suppressed. In addition, it is possible to reduce the size.
  • an arrangement configuration of each circuit element included in the high-frequency module 1 according to the present embodiment will be described.
  • FIG. 2A is a schematic plan view of the high-frequency module 1 according to Embodiment 1.
  • FIG. 2B is a schematic cross-sectional view of the high-frequency module 1 according to Embodiment 1, specifically, a cross-sectional view taken along line IIB-IIB in FIG. 2A.
  • 2A shows a layout of circuit elements when the main surface 91a of the opposing main surfaces 91a and 91b of the module substrate 91 is viewed from the z-axis positive direction side.
  • FIG. 2B shows a perspective view of the arrangement of circuit elements when the main surface 91b is viewed from the positive side of the z-axis.
  • high-frequency module 1 according to the present embodiment further includes a module substrate 91 and resin members 92 and 93 in addition to the circuit configuration shown in FIG. ing.
  • the module substrate 91 has a main surface 91a (first main surface) and a main surface 91b (second main surface) facing each other, and is a substrate on which the transmitting circuit and the receiving circuit are mounted.
  • a low-temperature co-fired ceramic (LTCC) substrate having a laminated structure of a plurality of dielectric layers, a printed circuit board, or the like is used.
  • the resin member 92 is disposed on the main surface 91a of the module substrate 91, and covers a part of the transmission circuit, a part of the reception circuit, and the main surface 91a of the module substrate 91, and includes the transmission circuit and the reception circuit. Has a function of ensuring reliability such as mechanical strength and moisture resistance of the circuit element constituting the device.
  • the resin member 93 is disposed on the main surface 91b of the module substrate 91 and covers a part of the transmission circuit, a part of the reception circuit, and the main surface 91b of the module substrate 91, and includes the transmission circuit and the reception circuit. Has a function of ensuring reliability such as mechanical strength and moisture resistance of the circuit element constituting the device.
  • the resin members 92 and 93 are not essential components of the high-frequency module according to the present invention.
  • the amplification elements 11B and 12B, the duplexers 61 and 62, the matching circuits 31 and 32, and the switches 51 to 55 The surface is mounted on the surface 91a.
  • amplification elements 11A and 12A, reception low noise amplifiers 21 and 22, duplexers 63 and 64, and matching circuits 41 and 42 are surface-mounted on main surface 91b of module substrate 91.
  • matching circuits 71 to 74 may be surface-mounted on any of main surfaces 91a and 91b of module substrate 91, or may be built in module substrate 91. May be.
  • the amplification element 11B of the transmission power amplifier 11 and the amplification element 12B of the transmission power amplifier 12 are mounted on the main surface 91a of the module substrate 91.
  • the amplification element 11A of the transmission power amplifier 11 and the amplification element 12A of the transmission power amplifier 12 are mounted on the main surface 91b of the module substrate 91.
  • the amplification element 11A includes a drive control circuit 11c and a drive amplification element 11d.
  • the drive control circuit 11c is a circuit that generates and controls a bias voltage (current) supplied to the drive element 11B and the drive amplification element 11d.
  • the drive amplification element 11d is an amplification transistor of the amplification element 11A.
  • the amplifying element 12A includes a drive control circuit 12c and a drive amplifying element 12d.
  • the drive control circuit 12c is a circuit that generates and controls a bias voltage (current) supplied to the drive element 12B and the drive amplification element 12d.
  • the drive amplification element 12d is an amplification transistor of the amplification element 12A.
  • Matching circuits 31, 32, 41 and 42 each include at least one of an inductor and a capacitor.
  • amplifying elements 11B and 12B are mounted on main surface 91a of module substrate 91, and amplifying elements 11A and 12A are mounted on main surface 91b of module substrate 91. That is, the amplifier elements 11A and 12A and the amplifier elements 11B and 12B are arranged with the module substrate 91 interposed therebetween.
  • the amplifier elements 11A and 12A and the amplifier elements 11B and 12B can be arranged close to each other so as to overlap each other when the module substrate 91 is viewed in plan. Therefore, the high-frequency module 1 can be reduced in size (area saving) as compared with the case where the amplification elements 11A and 12A and the amplification elements 11B and 12B are arranged on the same surface.
  • connection wiring between the amplification elements 11A and 11B and the connection wiring between the amplification elements 12A and 12B can be shortened. Further, for example, it becomes possible to connect the amplification elements 11A and 12A and the amplification elements 11B and 12B by using via conductors penetrating the module substrate 91 in the vertical direction.
  • the via conductor has a lower resistance than a pattern conductor formed in a direction along the main surface of the module substrate 91. Therefore, the transmission loss of the high-frequency signal transmitted between the amplification elements 11A and 11B and the transmission loss of the high-frequency signal transmitted between the amplification elements 12A and 12B can be suppressed. High amplification characteristics can be secured.
  • the amplification elements 11A and 12A and the amplification elements 11B and 12B are more likely to be arranged close to each other than when they are arranged on the same plane, but the amplification elements 11A and 12A and the amplification elements 11B And 12B can be suppressed by the module substrate 91 interposed therebetween.
  • the transmission power amplifier 11 composed of the multi-stage amplification elements 11A and 11B and the transmission power amplifier 12 composed of the multi-stage amplification elements 12A and 12B ensure good amplification characteristics while reducing the size of the high-frequency amplifier.
  • Module 1 can be provided.
  • the high-frequency module 1 when the module substrate 91 is viewed from above (when viewed from the z-axis direction), at least a part of the amplification elements 11A and 11B The amplifier elements 12A and 12B overlap at least partially.
  • the amplifying elements 11A and 11B can be connected only by the via conductors 94 penetrating the module substrate 91 in the vertical direction. Further, the amplifying elements 12A and 12B can be connected only by via conductors penetrating the module substrate 91 in the vertical direction. Further, the area of main surfaces 91a and 91b of module substrate 91 can be reduced. Therefore, the transmission loss of the high-frequency signal transmitted between the amplification elements 11A and 11B and the transmission loss of the high-frequency signal transmitted between the amplification elements 12A and 12B can be further suppressed, and the high-frequency module 1 can be omitted. It is possible to increase the area.
  • the amplifying elements 11A and 12A may be composed of CMOS containing Si. Thus, by configuring the amplifying elements 11A and 12A that do not require power handling with CMOS containing Si, the high-frequency module 1 can be reduced in noise and manufactured at low cost. Further, when amplifying elements 11A and 12A and switches 51 to 55 are mounted on the same main surface, connection of amplifying elements 11A and 12A, switches 51 to 55, switches 51 to 55, and transmission power amplifier The control units that control the amplification factors of the reception noise amplifiers 11 and 12 and the reception low-noise amplifiers 21 and 22 may be made into one chip using CMOS containing Si. Thus, the high-frequency module 1 can be reduced in size.
  • amplifying elements 11A and 12A and amplifying elements 11B and 12B when amplifying elements 11A and 12A and amplifying elements 11B and 12B are mounted on different main surfaces, amplifying elements 11A and 11B may be made of different materials.
  • the amplification elements 12A and 12B may be made of different materials.
  • amplifying elements 11A and 12A that do not require power handling are composed of low-noise and inexpensive CMOS containing Si
  • amplifying elements 11B and 12B that require high output are composed of GaAs-based materials, thereby achieving high quality and low quality.
  • the high-frequency module 1 can be provided at a low cost.
  • a plurality of columnar electrodes 150 penetrating the resin member 93 are arranged on the main surface 91b side of the module substrate 91.
  • the high-frequency module 1 exchanges an electric signal with a mounting board arranged on the negative side of the high-frequency module 1 in the z-axis direction through a plurality of columnar electrodes 150.
  • Some of the plurality of columnar electrodes 150 are set to the ground potential of the mounting board.
  • amplification elements 11A and 12A are mounted on main surface 91b on which columnar electrode 150 is formed.
  • the columnar electrode 150 mounted on the main surface 91b, the amplification elements 11A and 12A, and the resin member 93 are formed. Polishing can be performed by CMP (Chemical Mechanical Polishing) or the like. This makes it possible to expose the columnar electrode 150 and the amplification elements 11A and 12A from the resin member 93 while flattening the surface on the main surface 91b side of the high-frequency module 1 facing the mounting substrate.
  • CMP Chemical Mechanical Polishing
  • matching circuits 31 and 32 are mounted on main surface 91a.
  • the high-frequency signal of the transmission system of the first frequency band group is input to the amplifying element 11A mounted on the main surface 91b, and via the via conductor 94, the amplifying element 11B mounted on the main surface 91a.
  • the high-frequency signal of the transmission system of the second frequency band group is input to the amplifying element 12A mounted on the main surface 91b, and via a via conductor, the amplifying element 12B mounted on the main surface 91a and the matching circuit 32. Transmit to. That is, transmission of a high-frequency signal from the input terminal of the transmission power amplifier to the output terminal of the matching circuit can be formed by a short signal path. Therefore, the high-frequency module 1 in which the transmission loss is suppressed can be provided.
  • high-frequency module 1 includes reception low-noise amplifiers 21 and 22 mounted on module board 91. According to this, since the transmission power amplifier and the reception low-noise amplifier are mounted on one substrate, it is possible to provide a small transmission / reception system composite module having good amplification characteristics of the transmission power amplifiers 11 and 12.
  • the reception low-noise amplifiers 21 and 22 are mounted on the main surface 91b. That is, the high-output amplification elements 11B and 12B and the reception low-noise amplifiers 21 and 22 are arranged on different main surfaces of the module substrate 91. According to this, since the module substrate 91 is interposed between the amplification elements 11B and 12B and the reception low-noise amplifiers 21 and 22, the high-frequency signals output from the amplification elements 11B and 12B are 22 can be prevented from flowing directly. Therefore, the isolation between the transmission circuit and the reception circuit is improved.
  • the conductive member is an electronic member having a conductive member such as a signal extraction electrode, for example, a passive element such as a resistor, a capacitor, an inductive element, a filter, a switch, a signal wiring, and a signal terminal.
  • a passive element such as a resistor, a capacitor, an inductive element, a filter, a switch, a signal wiring, and a signal terminal.
  • Devices and / or active devices such as amplifiers and control circuits.
  • the conductive member is at least one of the duplexers 61 to 64. Further, the conductive member may be at least one of a transmission filter and a reception filter constituting each of the duplexers 61 to 64.
  • the transmission filter and the reception filter constituting each of the duplexers 61 to 64 have a plurality of conductive members such as signal extraction electrodes. For example, as shown in FIG. 2B, at least one of the plurality of signal extraction electrodes Is connected to the ground pattern 95G1 or 95G2 arranged on the module substrate 91.
  • amplification elements 11B and 12B that output high-power high-frequency signals are arranged on main surface 91a of module substrate 91, and reception low-noise amplifiers 21 and 22 are arranged on main surface 91b.
  • at least one of the duplexers 61 to 64 mounted on the main surface 91a or 91b is arranged between the last-stage amplifier elements 11B and 12B and the reception low-noise amplifiers 21 and 22.
  • the module substrate 91 and the conductive member interposed between the amplification elements 11B and 12B and the reception low-noise amplifiers 21 and 22 allow the high-power high-frequency signals generated from the amplification elements 11B and 12B and their harmonics to be reduced.
  • the flow into the noise amplifiers 21 and 22 can be suppressed. Accordingly, the amount of the harmonic component of the high-output high-frequency signal amplified by the amplification elements 11B and 12B or the intermodulation distortion component between the high-frequency signal and another high-frequency signal flowing into the receiving circuit can be reduced. Deterioration of the receiving sensitivity of the module 1 can be suppressed.
  • the conductive member mounted on the main surface 91a or 91b is disposed between the amplification elements 11B and 12B and the reception low noise amplifiers 21 and 22.
  • the plan view (1) an arbitrary point in the area of the amplification element 11B projected in the plan view is connected to an arbitrary point in the area of the reception low-noise amplifier 21 projected in the plan view.
  • At least a part of the area of the conductive member projected in the plan view overlaps a line connecting an arbitrary point in the area of the received low-noise amplifier 21 to be projected.
  • (2) Projection in the plan view Sa A line connecting an arbitrary point in the area of the amplifying element 11B and an arbitrary point in the area of the reception low-noise amplifier 22 projected in the plan view, the line of the conductive member area projected in the plan view.
  • the high-frequency module 1 has a configuration in which the conductive member mounted on main surface 91a or 91b is arranged between amplifying elements 11B and 12B and receiving low-noise amplifiers 21 and 22.
  • the conductive member mounted on the main surface 91a or 91b may be arranged between at least one of the amplification elements 11B and 12B and at least one of the reception low-noise amplifiers 21 and 22.
  • the amount of harmonic components of a high-power high-frequency signal transmitted through one transmission path or intermodulation distortion components between the high-frequency signal and another high-frequency signal flowing into one reception path can be reduced.
  • the transmission filter and the reception filter are illustrated as the conductive members arranged between the amplification elements 11B and 12B and the reception low-noise amplifiers 21 and 22, but the transmission members are the transmission filter and the reception filter.
  • the amplification element 11A or 12A (2) the switch 55, (3) the switch 51 or 52, (4) the switch 53 or 54, and (5) the transmission terminal and the reception filter.
  • a control circuit that generates at least one of the control signals to be controlled.
  • the control circuit of (7) may be a switch IC including at least one of the switches 51 to 55.
  • the circuit elements (1) to (7) desirably have electrodes set to the ground potential or the fixed potential.
  • the circuit elements (1) to (7) are It is desirable to be connected to a ground pattern formed in the substrate 91. Thereby, the electromagnetic field shielding function of the circuit elements (1) to (7) is improved.
  • the electromagnetic fields generated by the amplifier elements 11B and 12B can be shielded, so that the high-output high-frequency signals generated by the amplifier elements 11B and 12B and their harmonics are transmitted to the reception low-noise amplifiers 21 and 22. Inflow can be suppressed. Therefore, the frequency of the harmonic of the high-frequency signal amplified by the transmission power amplifiers 11 and 12 or the frequency of the intermodulation distortion between the high-frequency signal and another high-frequency signal is at least one of the reception bands of the communication bands A to D.
  • a harmonic component of a high-output high-frequency signal amplified by the amplification elements 11B and 12B or an intermodulation distortion component between the high-frequency signal and another high-frequency signal is transmitted to a receiving circuit. Since the amount of inflow can be reduced, deterioration of the receiving sensitivity of the high-frequency module 1 can be suppressed.
  • FIG. 3 is a schematic cross-sectional view of a high-frequency module 1A according to a first modification of the embodiment.
  • the high-frequency module 1A according to the present modification is different from the high-frequency module 1 according to the embodiment in that a shield electrode layer 96 is additionally arranged.
  • a shield electrode layer 96 is additionally arranged.
  • the shield electrode layer 96 is formed so as to cover the top and side surfaces of the resin member 92 and the side surface of the resin member 93, and a ground pattern 95G2 set to a ground potential in the module substrate 91; Are connected at the side of. Further, the top surfaces of the high-output amplification elements 11B and 12B are in contact with the shield electrode layer 96. With the arrangement of the shield electrode layer 96, high-frequency signals output from the transmission power amplifiers 11 and 12 can be suppressed from being directly radiated from the high-frequency module 1A to the outside, and external noises constitute circuit elements constituting the high-frequency module 1A. Can be suppressed from invading. Further, heat generated by the amplifier elements 11B and 12B can be radiated through the shield electrode layer 96, so that the heat radiation of the high-frequency module 1A is improved.
  • FIG. 4 is a schematic cross-sectional view of a high-frequency module 1B according to a second modification of the embodiment.
  • high-frequency module 1B according to the present modification is different from high-frequency module 1 according to the embodiment in that amplifying elements forming transmission power amplifiers 11 and 12 are arranged on main surfaces 91a and 91b. The sorting is different.
  • description of the same points as those of the high-frequency module 1 according to the embodiment will be omitted, and different points will be mainly described.
  • the amplification element 11B of the transmission power amplifier 11 and the amplification element 12B of the transmission power amplifier 12 are mounted on the main surface 91b of the module substrate 91.
  • the amplification element 11A of the transmission power amplifier 11 and the amplification element 12A of the transmission power amplifier 12 are mounted on the main surface 91a of the module substrate 91.
  • the amplification elements 11B and 12B are mounted on the main surface 91b of the module substrate 91, and the amplification elements 11A and 12A are mounted on the main surface 91a of the module substrate 91. That is, the amplifier elements 11A and 12A and the amplifier elements 11B and 12B are arranged with the module substrate 91 interposed therebetween.
  • the amplifier elements 11A and 12A and the amplifier elements 11B and 12B can be arranged closer to each other. It becomes. Thereby, the connection wiring between the amplification elements 11A and 11B and the connection wiring between the amplification elements 12A and 12B can be shortened. In addition, it becomes possible to connect the amplifier elements 11A and 12A and the amplifier elements 11B and 12B by using via conductors penetrating the module substrate 91 in the vertical direction. Therefore, the transmission loss of the high-frequency signal transmitted between the amplification elements 11A and 11B and the transmission loss of the high-frequency signal transmitted between the amplification elements 12A and 12B can be suppressed. High amplification characteristics can be secured.
  • the amplification elements 11A and 12A and the amplification elements 11B and 12B are more likely to be arranged close to each other than when they are arranged on the same plane, but the amplification elements 11A and 12A and the amplification elements 11B And 12B can be suppressed by the module substrate 91 interposed therebetween.
  • the transmission power amplifier 11 composed of the multi-stage amplification elements 11A and 11B and the transmission power amplifier 12 composed of the multi-stage amplification elements 12A and 12B ensure good amplification characteristics while reducing the size of the high-frequency amplifier.
  • Module 1B can be provided.
  • a plurality of columnar electrodes 150 penetrating the resin member 93 are arranged on the main surface 91b side of the module substrate 91.
  • the high-frequency module 1B exchanges an electric signal with a mounting substrate arranged on the negative side of the high-frequency module 1B in the z-axis direction via the plurality of columnar electrodes 150.
  • Some of the plurality of columnar electrodes 150 are set to the ground potential of the mounting board.
  • the amplification elements 11B and 12B are mounted on the main surface 91b on which the columnar electrodes 150 are formed, and the top surfaces of the amplification elements 11B and 12B are exposed from the resin member 93.
  • heat generated by the high-output amplifying elements 11B and 12B can be radiated from the top surfaces of the amplifying elements 11B and 12B, so that the heat radiation of the high-frequency module 1B is improved.
  • high-frequency module 1 includes transmission power amplifier 11 (first transmission power amplifier) having a plurality of amplifying elements connected in multiple stages, and module substrate 91 having main surfaces 91a and 91b.
  • the plurality of amplifying elements are mounted on the main surface 91a, and the amplifying element 11B (first amplifying element) arranged at the last stage of the plurality of amplifying elements, and mounted on the main surface 91b, and are provided at a stage before the amplifying element 11B.
  • an amplifying element 11A second amplifying element
  • the amplification elements 11A and 11B can be arranged close to each other so as to overlap each other when the module substrate 91 is viewed in plan. Therefore, the high-frequency module 1 can be reduced in size (area saving) as compared with the case where the amplification elements 11A and 12A and the amplification elements 11B and 12B are arranged on the same surface.
  • connection wiring between the amplification elements 11A and 11B can be shortened. Further, for example, it becomes possible to connect the amplifying elements 11A and 11B by using a via conductor 94 that penetrates the module substrate 91 in the vertical direction. Thereby, the transmission loss of the high-frequency signal transmitted between the amplification elements 11A and 11B can be suppressed.
  • the amplifier elements 11A and 11B are arranged close to each other is higher than when the amplifier elements 11A and 11B are arranged on the same plane, the mutual interference between the amplifier elements 11A and 11B may be interposed between them. Can be suppressed by the module substrate 91. Therefore, it is possible to provide the downsized high-frequency module 1 while ensuring good amplification characteristics of the transmission power amplifier 11 including the multistage amplification elements 11A and 11B.
  • the high-frequency module 1 further includes a common terminal 100, a transmission input terminal 110 (first transmission input terminal), and a reception output terminal 130 (first reception output terminal).
  • the amplifier 11 amplifies the high-frequency signal input from the transmission input terminal 110 and outputs the amplified high-frequency signal to the common terminal 100.
  • the high-frequency module 1 is further mounted on the module substrate 91, and A reception low-noise amplifier 21 (first reception low-noise amplifier) that amplifies the input high-frequency signal and outputs the amplified high-frequency signal to the reception output terminal 130 may be provided.
  • the transmission power amplifier 11 and the reception low-noise amplifier 21 are mounted on one module substrate 91, it is possible to provide a small transmission / reception system composite module having good amplification characteristics of the transmission power amplifier 11.
  • a conductive member mounted on the main surface 91a or 91b is arranged between the amplifying element 11B and the reception low-noise amplifier 21. May be.
  • the frequency of the harmonic of the high-frequency signal amplified by the transmission power amplifier 11 or the frequency of intermodulation distortion between the high-frequency signal and another high-frequency signal overlaps with at least a part of the reception band of the communication band A. Even in this case, it is possible to prevent the high-output high-frequency signal generated from the amplification element 11B and its harmonics from flowing into the reception low-noise amplifier 21. Therefore, the amount of the harmonic component of the high-output high-frequency signal amplified by the amplifying element 11B or the intermodulation distortion component between the high-frequency signal and another high-frequency signal flowing into the receiving circuit can be reduced. Lowering of the receiving sensitivity can be suppressed.
  • the high-frequency module 1 has a common terminal 100, a transmission input terminal 110 (first transmission input terminal), a transmission input terminal 120 (second transmission input terminal), and a reception output terminal 130 (second reception output terminal). Terminal), a reception output terminal 140 (first reception output terminal), and a transmission power amplifier 11 (second terminal) that amplifies a high-frequency signal input from the transmission input terminal 110 and outputs the amplified high-frequency signal to the common terminal 100.
  • a first transmission power amplifier a transmission power amplifier 12 (a second transmission power amplifier) that amplifies a high-frequency signal input from the transmission input terminal 120, and outputs the amplified high-frequency signal to the common terminal 100.
  • Low-noise amplifier 21 (second receiving low-noise amplifier) that amplifies the high-frequency signal input from ),
  • a receiving low-noise amplifier 22 (first receiving low-noise amplifier) that amplifies a high-frequency signal input from the common terminal 100 and outputs the amplified high-frequency signal to the receiving output terminal 140, and a main surface facing each other.
  • a module substrate 91 having the transmission power amplifiers 11 and 12 and the reception low noise amplifiers 21 and 22 is provided.
  • the transmission power amplifier 11 amplifies the high frequency signal in the transmission band of the communication band A
  • the transmission power amplifier 12 amplifies the high frequency signal in the transmission band of the communication band C
  • the reception low noise amplifier 21 uses the high frequency signal in the reception band of the communication band A.
  • the signal is amplified, and the reception low-noise amplifier 22 amplifies the high-frequency signal in the reception band of the communication band C.
  • the transmission power amplifier 11 has an amplifier input terminal 111 and an amplifier output terminal 112, and a plurality of amplifying elements connected in cascade between the amplifier input terminal 111 and the amplifier output terminal 112. , An amplifying element 11B (first amplifying element) mounted on the main surface 91a and arranged at the last stage of the plurality of amplifying elements, and an amplifying element 11A mounted on the main surface 91b and arranged before the amplifying element 11B. (Second amplifying element).
  • the transmission power amplifier 12 includes an amplifier input terminal 121 and an amplifier output terminal 122, and a plurality of cascade-connected amplifier elements between the amplifier input terminal 121 and the amplifier output terminal 122.
  • An amplifying element 12B (first amplifying element) mounted on the main surface 91a and arranged at the last stage of the plurality of amplifying elements, and an amplifying element 12A mounted on the main surface 91b and arranged before the amplifying element 12B.
  • a conductive member mounted on the main surface 91a or 91b is arranged between the amplification elements 11B and 12B and the reception low-noise amplifiers 21 and 22.
  • the frequency of the harmonic of the high-frequency signal amplified by the transmission power amplifier 11 or the frequency of the intermodulation distortion between the high-frequency signal and another high-frequency signal becomes at least a part of the reception band of the communication band A or C. Even if it overlaps with the above, it is possible to suppress the high-output high-frequency signal generated from the amplification element 11B and its harmonics from flowing into the reception low-noise amplifier 21 or 22. Therefore, the amount of the harmonic component of the high-output high-frequency signal amplified by the amplifying element 11B or the intermodulation distortion component between the high-frequency signal and another high-frequency signal flowing into the receiving circuit can be reduced. Lowering of the receiving sensitivity can be suppressed.
  • the high-frequency module and the communication device according to the embodiment of the present invention have been described with reference to the embodiment and the modification thereof.
  • the high-frequency module and the communication device according to the present invention have the above-described embodiment and the modification thereof.
  • the present invention is not limited to this.
  • a person skilled in the art can think of another embodiment realized by combining arbitrary components in the above-described embodiment and its modified example, and the above-described embodiment and its modified example without departing from the gist of the present invention. Modifications obtained by performing various modifications, and various devices incorporating the high-frequency module and the communication device are also included in the present invention.
  • the present invention can be widely used for communication devices such as mobile phones as a high-frequency module arranged in a multi-band compatible front end unit.

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  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transceivers (AREA)
  • Amplifiers (AREA)

Abstract

La présente invention concerne un module haute fréquence (1) comprenant : un amplificateur de puissance de transmission (11) qui comprend une pluralité d'éléments d'amplification connectés en de multiples étages; et un substrat de module (91) qui présente des surfaces principales (91a and 91b) se faisant face, et sur laquelle est monté l'amplificateur de puissance de transmission (11). La pluralité d'éléments d'amplification comprend un élément d'amplification (11B) disposé au dernier étage de la pluralité d'éléments d'amplification, et un élément d'amplification (11A) disposé à un étage avant l'élément d'amplification (11B), l'élément d'amplification (11B) étant monté sur la surface principale (91a), et l'élément d'amplification (11A) étant monté sur la surface principale (91b).
PCT/JP2019/023804 2018-06-20 2019-06-17 Module haute fréquence et dispositif de communication WO2019244815A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201990000784.4U CN214069915U (zh) 2018-06-20 2019-06-17 高频模块和通信装置
KR1020207034961A KR102420284B1 (ko) 2018-06-20 2019-06-17 고주파 모듈 및 통신 장치
US17/118,610 US11303308B2 (en) 2018-06-20 2020-12-11 Radio frequency module and communication device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018117161 2018-06-20
JP2018-117161 2018-06-20

Related Child Applications (1)

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US17/118,610 Continuation US11303308B2 (en) 2018-06-20 2020-12-11 Radio frequency module and communication device

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WO2019244815A1 true WO2019244815A1 (fr) 2019-12-26

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US (1) US11303308B2 (fr)
KR (1) KR102420284B1 (fr)
CN (1) CN214069915U (fr)
WO (1) WO2019244815A1 (fr)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20210306018A1 (en) * 2020-03-31 2021-09-30 Murata Manufacturing Co., Ltd. Radio frequency module and communication device
KR20210119878A (ko) * 2020-03-25 2021-10-06 가부시키가이샤 무라타 세이사쿠쇼 고주파 모듈 및 통신 장치
KR20210123356A (ko) * 2019-03-13 2021-10-13 가부시키가이샤 무라타 세이사쿠쇼 고주파 모듈 및 통신 장치
KR20210127611A (ko) * 2020-04-14 2021-10-22 가부시키가이샤 무라타 세이사쿠쇼 고주파 모듈 및 통신 장치
KR20210127612A (ko) * 2020-04-14 2021-10-22 가부시키가이샤 무라타 세이사쿠쇼 고주파 모듈 및 통신 장치
KR20210146787A (ko) * 2020-05-27 2021-12-06 가부시키가이샤 무라타 세이사쿠쇼 고주파 모듈 및 통신 장치
KR20220009861A (ko) * 2020-07-16 2022-01-25 가부시키가이샤 무라타 세이사쿠쇼 고주파 모듈 및 통신 장치
KR20220009865A (ko) * 2020-07-16 2022-01-25 가부시키가이샤 무라타 세이사쿠쇼 고주파 모듈 및 통신장치
WO2022113820A1 (fr) * 2020-11-25 2022-06-02 株式会社村田製作所 Module haute fréquence et dispositif de communication
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KR102420284B1 (ko) 2022-07-14

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