WO2019237228A1 - 发光组件 - Google Patents

发光组件 Download PDF

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Publication number
WO2019237228A1
WO2019237228A1 PCT/CN2018/090673 CN2018090673W WO2019237228A1 WO 2019237228 A1 WO2019237228 A1 WO 2019237228A1 CN 2018090673 W CN2018090673 W CN 2018090673W WO 2019237228 A1 WO2019237228 A1 WO 2019237228A1
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WO
WIPO (PCT)
Prior art keywords
light
emitting
emitting component
component according
emitting diode
Prior art date
Application number
PCT/CN2018/090673
Other languages
English (en)
French (fr)
Other versions
WO2019237228A8 (zh
Inventor
刘同凯
丁绍滢
徐宸科
李佳恩
Original Assignee
厦门三安光电有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 厦门三安光电有限公司 filed Critical 厦门三安光电有限公司
Priority to CN201880025489.4A priority Critical patent/CN110546751A/zh
Priority to KR1020207030670A priority patent/KR102579057B1/ko
Priority to EP18922756.4A priority patent/EP3806168B1/en
Priority to PCT/CN2018/090673 priority patent/WO2019237228A1/zh
Publication of WO2019237228A1 publication Critical patent/WO2019237228A1/zh
Priority to US17/081,205 priority patent/US11742334B2/en
Publication of WO2019237228A8 publication Critical patent/WO2019237228A8/zh
Priority to US18/357,683 priority patent/US20230369300A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81001—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus
    • H01L2224/81005—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a temporary auxiliary member not forming part of the bonding apparatus being a temporary or sacrificial substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/81007—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector involving a permanent auxiliary member being left in the finished device, e.g. aids for holding or protecting the bump connector during or after the bonding process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Definitions

  • the present invention belongs to the field of semiconductor manufacturing, and particularly relates to a light-emitting component provided to an application end.
  • MicroLED micro-light emitting diode chips have attracted attention in a wide range of applications such as biosensors, automotive lighting, displays, flexible devices, optical communications, and visual reality devices.
  • the tiny size and structure of micro LED chips have led to a reduction in pitch and an increase in external quantum efficiency, which is a revolution in optoelectronic devices.
  • the thin and compact architecture of MicroLED chips is difficult to transfer and time consuming. For example, if the transfer process is based on a traditional placement machine, 6 million MicroLED chips may require a one-month transfer cycle. The transfer process of micro LED chips used in mass production processes is inefficient.
  • each transfer of MicroLED chips may reduce product yield. That is, because the pick-and-place process includes pressure and thermal changes in the transfer head and substrate, excessive transfer actions increase the number of microLED chip bonding failures.
  • the present invention proposes a feasible solution to the problems of the background art.
  • the present invention provides a novel miniature light emitting diode assembly for mass production.
  • a series of MicroLE D chip transfer processes are completed, and then the films with B, G, and R cores are delivered to the application side.
  • This kind of component can strengthen the quality of application-side products.
  • light-emitting components with high bonding efficiency can be obtained at the application side.
  • the present invention provides a light-emitting component, including: a plurality of light-emitting diodes, the light-emitting diode includes a semiconductor layer sequence, the semiconductor sequence is at least a first type semiconductor layer, a second type semiconductor layer and a first type semiconductor layer. And the active light emitting layer between the second type semiconductor layer and the first type A first electrical contact layer electrically connected to the semiconductor layer of the second type, a second electrical contact layer electrically connected to the semiconductor layer of the second type,
  • a continuous or separated mucosa for adhering the light emitting diode is provided between the bracket and the light emitting diode.
  • the light emitting diodes are regularly arranged on the mucosa, and the mucosa is a material capable of grasping the light emitting diode core particles.
  • the regular arrangement is obtained by transferring the light emitting diode to the mucosa multiple times.
  • the mucous membrane is a removable material
  • the removal method of the removed material includes, but is not limited to, chemical decomposition and physical decomposition, for example, technical means such as photodecomposition or thermal decomposition.
  • the mucosa is a stable structure during the process of adhering the light emitting diode.
  • the mucosa has a function of fixing the light emitting diode, and can release the light emitting diode under a physical or chemical action.
  • the thickness of the mucosa is 5 to 10 (Vm.
  • the surface of the mucosa has a plurality of mesa-shaped protrusions, and the convex surfaces of the mesa-shaped protrusions and light emission
  • the mesa-shaped protrusion shape is a rectangular parallelepiped, a circular table, a prism, or other columnar structures.
  • the interval between the mesa-shaped protrusions is 20-600-.
  • the height of the mesa-shaped protrusion is greater than the thickness of the light-emitting diode.
  • the height of the mesa-shaped protrusion is 10 to 2 (Vm.
  • the mesa-shaped protrusion is formed by removing at least a part of the mucosa between the light-emitting diodes before or after the light-emitting diodes are adhered.
  • the side wall of the light emitting diode has a thin film made of a mucosal material.
  • the thickness of the thin film is 3 to 1 (Vm
  • the refractive index of the thin film is 1.2 ⁇ 2.
  • the hardness of the mucosa is 15 to 50 J / m 3 .
  • the mucous membrane material includes polyimide, ultraviolet light-sensitive adhesive, heat-sensitive adhesive, and hydrosol silica gel.
  • the structure of the light emitting diode includes a front mounting structure, a flip mounting structure, or a vertical junction. ⁇ Structure.
  • the light emitting diode has a protective layer on a side in contact with the mucosa and / or on a side wall adjacent to the side in contact with the mucosa.
  • the role of the protective layer includes corrosion resistance, water vapor resistance, or oxidation resistance.
  • the material of the protective layer includes silicon, silicon oxide, silicon nitride, or epoxy resin.
  • the regular arrangement is preferably achieved by transferring different light emitting diodes in batches.
  • the regularly arranged combination includes a combination of different light emitting wavelengths, a combination of different pitches, or a combination of different sizes.
  • different combinations of light emitting wavelengths include blue-blue, blue-green-red, blue-green-green-red, blue-green-green-red-red, or blue-green-red-red.
  • the combination arrangement of different sizes includes different thicknesses, different light emitting areas, or different shapes.
  • the light emitting component is used for bonding to a substrate circuit.
  • the light emitting assembly has a function of transferring a plurality of light emitting diodes from the bracket to the substrate circuit at one time.
  • the light emitting diode has from 2 [i m to 5 [i m, from 5 [i m to 10 [i m, from 10 [i m to 20 [i m, from 20 [i m to 50 [i m or a length from 50 [i m to 100 [i m.
  • the light emitting diode has a range from 2 [im to 5 [im, from 5 [im to 10 [im, from 10 [im to 20 [i m, from 20 [i m to 50 [i m or width from 50 [im to 100 [im] .
  • the light emitting diode has a range from 2 [im to 5 [im, from 5 [im to 10 [im, from 10 [im to 20 [i m, from 20 [i m to 50 [i m or height from 50 [i m to 100 [i m.
  • the material of the bracket includes sapphire, gallium arsenide, silicon, or silicon carbide.
  • the present invention also provides a light-emitting device including any one of the light-emitting components described above.
  • the light-emitting device is composed of a substrate circuit and a light-emitting component bonded to the substrate circuit.
  • the present invention provides a method for manufacturing the above-mentioned light-emitting component, and a method for manufacturing the light-emitting component.
  • the light-emitting component is used for bonding a light-emitting diode to a substrate circuit.
  • Type semiconductor layer, second type semiconductor layer, and first type semiconductor The light emitting diode further comprises a first electrical contact layer electrically connected to the first type semiconductor layer, and a second electrical contact layer electrically connected to the second type semiconductor layer.
  • Step (1) Provide a stent for supporting the light emitting component, and apply a layer of mucosa on the stent
  • Step (2) Adhere a light emitting diode core particle having a first wavelength of light output and a light emitting diode core particle having a second wavelength of light output different from the first wavelength on a mucosa to obtain a light emitting component;
  • the adhesion of the light-emitting diode core particles in step (2) to the mucosa is performed in batches according to different wavelengths.
  • step (2) part or all of the mucosa between the core particles of the light-emitting diode is removed, and the mucosa is made into a structure with a mesa-like protrusion.
  • the light emitting diode core has a first electrical contact layer electrically connected to the first type semiconductor layer, a second electrical contact layer electrically connected to the second type semiconductor layer, and the first electrical contact layer
  • the second electrical contact layer is located on the surface of the light-emitting diode on the side facing away from the mucosa.
  • the present invention also provides a method for manufacturing a light-emitting device.
  • the light-emitting device has a substrate circuit.
  • the steps of the manufacturing method include the manufacturing method of any one of the above-mentioned light-emitting components.
  • the mucosa and / or the stent is removed after bonding.
  • the light emitting diodes are regularly arranged on the mucosa.
  • the application side provides a light-emitting component that can quickly join various specifications, increase the working efficiency of the application side, and increase the added value of the chip.
  • the mucosa is a removable material, which provides the possibility of making various graphics in the light-emitting component,
  • the bonding substrate adapted to different surface conditions in actual applications can better meet the needs of clients.
  • the mucosal surface has mesa-shaped protrusions to overcome the interference of the complex surface conditions of the bonding substrate on bonding in practical applications.
  • the height of the mesa-shaped protrusion needs to be greater than the thickness of the light-emitting diode or the height of the mesa-shaped protrusion is 10 ⁇ 2 (V m to avoid the sheet from warping the sheet due to processing stress, which causes the light-emitting component to be under pressure.
  • V m the thickness of the light-emitting diode
  • the warped part of the light emitting diode touches the surface of the substrate, so a safety distance is reserved by the height of the table-shaped protrusion.
  • the light-emitting diode has a protective layer on the side in contact with the mucosa and / or on the side wall adjacent to the side in contact with the mucous membrane, which reduces or prevents the light-emitting diode from being affected by the working environment, which causes the performance of the light-emitting diode to decrease.
  • FIG. 1 is a schematic structural diagram of a light emitting component according to Embodiment 1;
  • FIG. 2 is a schematic structural diagram of a light emitting component according to some modified embodiments of Embodiment 1;
  • FIG. 3 is a schematic structural diagram of a light emitting component according to Embodiment 2;
  • FIG. 4 is a schematic structural diagram of a light emitting component according to Embodiment 3.
  • FIG. 5 is a schematic structural diagram of a light emitting device according to Embodiment 4.
  • FIG. 6 and FIG. 7 are schematic diagrams of a method for manufacturing a light-emitting component according to Embodiment 5;
  • FIG. 8 is a schematic structural diagram of a light emitting device made according to Embodiment 7.
  • a light-emitting component is provided.
  • the light-emitting component is used for directly bonding to a substrate circuit.
  • the light-emitting component is an application-oriented product for sale and includes: A plurality of light emitting diodes 100, the light emitting diode 100 includes a semiconductor layer sequence 110, and the semiconductor sequence 110 includes at least a first type semiconductor layer, a second type semiconductor layer, and active light emission between the first type semiconductor layer and the second type semiconductor layer Layer composition, a first electrical contact layer 121 electrically connected to the first type semiconductor layer, a second electrical contact layer 122 electrically connected to the second type semiconductor layer,
  • a bracket 200 for providing support to the light emitting diode 100 The material of the bracket 200 includes a wafer composed of sapphire, gallium arsenide, silicon, or silicon carbide.
  • the bracket 200 is used to stably support the light emitting diode 100, and the bracket 200 is deformed.
  • the stability of the light-emitting diode 100 can provide a good fitting accuracy when the light-emitting diode 100 is bonded to the light-emitting device.
  • the surface of the bracket 200 itself has adhesiveness, so that the functions of stable support and adhesion are taken into consideration.
  • a continuous or separated mucosa 300 is provided between the bracket 200 and the light emitting diode 100 for adhering the light emitting diode 100 to the bracket 200, and the light emitting diodes 100 are regularly arranged on the mucosa 300.
  • the regular arrangement is to actively divide the light-emitting diodes 100 into multiple batches and adhere to the mucous membrane 300 according to a certain rule.
  • the selection rules include a combination of different light emitting wavelengths, a specific position, or a different arrangement. Size combination arrangement and so on.
  • the light-emitting component of this embodiment has the capability of directly bonding to the packaging substrate, which reduces the number of times that 100 light-emitting diodes of various specifications are directly bonded to the packaging substrate circuit 400 in batches, and reduces the bonding on the packaging substrate. The probability of failure, thereby reducing production costs, and also facilitates customers to directly install / bond the light-emitting component to the application device.
  • the patterning or roughening process of the mucosa 300 is implemented, so the mucosa 300 is selected as a removable material.
  • the mucous membrane 300 has a function of fixing the light emitting diode 100. Some of the mucous membranes 300 of this embodiment can release the light emitting diode 100 under a physical or chemical action.
  • the surface of the mucosa 300 in this embodiment is provided with a plurality of mesa-shaped protrusions 310 through partial selective removal.
  • the surface of the platform 311 of the mesa-shaped protrusions 310 is in contact with the light emitting diode 100.
  • the shape of the mesa-shaped protrusion 310 can be selected according to actual needs without being specifically limited, such as a rectangular parallelepiped, a circular table, a prism, or other columnar structures.
  • the thickness of the mucosa 300 is 5 to 10 (Vm, and the distance between the terraces 3 and 10 is 20 to 600. In some implementations, the height of the terraces 310 can be designed to be greater than the thickness of the light emitting diode 100.
  • the height of the lift 310 is 10 ⁇ 2 (Vm.)
  • the mesa-shaped protrusion 310 is formed by removing at least a part of the mucosa 300 between the light-emitting diodes 100 after adhering the light-emitting diode 100, for example, removing the height relative to the mesa-shaped protrusion 310 Set 10 ⁇ 2 (Vm depth.
  • the adhesive film 300 is a stable structure during the process of adhering the light emitting diode 100 to completing the final bonding to the substrate circuit 400, and can provide a stable chemical or physical state for a long time, such as a certain range of temperature resistance and a certain vibration. Resistance or resistance to air oxidation, protective layer provides contact layer and semiconductor sequence Protection so that the bonding process can be efficiently, accurately matched, and with good reliability when bonding to the packaging substrate.
  • the light emitting diode 100 is adhered to the mucosa 300.
  • the adhesiveness and / or flexible clamping force of the mucosa 300 is used to provide support for the light emitting diode.
  • the side wall of the light emitting diode 100 has a thin film made of a mucous material. 320.
  • the selection range of the material of the adhesive film 300 includes polyimide, ultraviolet light-sensitive adhesive, heat-sensitive adhesive, hydrosol, and silica gel.
  • the structure of the light emitting diode 100 is not limited to a front-mounted structure, a flip-chip structure, or a vertical structure. In order to improve light extraction efficiency and facilitate bonding, this embodiment is preferably a flip-chip structure.
  • the light-emitting diode 100 is mainly selected from micro-sized micro-light-emitting diodes.
  • the light-emitting diode has a diameter from 2 [i m to 5 [i m, from 5 [i m to 10 [i m , From 10 [i m to 20 [i m, from 20 [i m to 50 [i m or from 50 [i m to 100 [i m
  • the light emitting diode has a length from 2 [i m to 5 [i m, From 5 [i m to 10 [i m, from 10 [i m to 20 [i m, from 20 [i m to 50 [i m or from 50 [i m to 100 [i m
  • the light emitting diode has a width from 2 [i m to 5 [i m, from 5 [i m to 10 [i m, from 10 [i m to 20 [i m, from 20 [i m to 50 []
  • the film 320 is used to make some special designs to improve performance, such as making the film 320 into a total reflection film or an anti-reflection film.
  • the thickness of the thin film 320 in this modified embodiment is less than 3 pm, and the refractive index of the thin film 320 is 1.2 ⁇ 2.
  • the thin film 320 is composed of the adhesive film 300.
  • the hardness is preferably 15 to 50 J / m 3 .
  • the refractive index characteristics of the thin film 320 may be determined by the material characteristics of the mucosa 300 itself, or the characteristics may be achieved by local or overall doping to the mucosa 300.
  • the light emitting diode 100 is on the side in contact with the mucosa 300 and / or on the side adjacent to the side in contact with the mucosa 300
  • a protective layer 500 is provided on the wall, and the functions of the protective layer 500 include anti-corrosion, anti-water vapor or anti-oxidation.
  • the material of the protective layer 500 includes materials such as silicon, silicon oxide, silicon nitride, or epoxy resin, which can improve the reliability of the light emitting device.
  • the protective layer 500 may be replaced with an encapsulant or a wavelength conversion material, and has the functions of simplifying the packaging process and protecting the light emitting diode.
  • a third embodiment of the present invention is provided by combining some modified embodiments of the first embodiment with the features of the solution of the second embodiment, that is, the material of the mucosa 300 of this embodiment has a first An implementation
  • the optical characteristics of some modified embodiments are provided with a protective layer 500 on the surface of the mucosa 300, especially when, for example, the mucosa 300 uses a material that affects the performance of the light emitting diode 100, the light emitting diode 100 needs to be protected by the protective layer 500 that functions as an insulation Provide protection.
  • a fourth embodiment of the present invention mainly provides an application manner of a light emitting component.
  • This embodiment discloses a light emitting device including the light emitting component of any one of the above embodiments.
  • the light-emitting component is bonded to the substrate circuit 400.
  • the substrate circuit 400 has a number of switches corresponding to the light-emitting diodes 100 in the light-emitting component, and controls the brightness and darkness of each light-emitting diode 100 respectively.
  • the substrate circuit 400 is based on the needs of the application end. It may also include one or more series circuits to constitute a light emitting device.
  • the present invention mainly provides a method for manufacturing a light emitting component.
  • the light emitting component is used for bonding to the substrate circuit 400, and includes:
  • the process method is to provide a temporary bonding material as the bracket 200, temporarily fix the light emitting diodes 100, and the arrangement of the light emitting diodes 100 can be designed with the appearance of the substrate circuit 400 at the end application side.
  • Volume transfer process for efficient alignment and transfer.
  • the mass transfer process can divide the blue, green, and red light emitting diodes 100 into a plurality of times, place the blue, green, and red light emitting diodes 100 on the temporary bonding material, and then, this blue, green, and red light emitting diodes
  • the temporary support of 100 is aligned with the final substrate, and is thermally bonded at one time. In this way, the blue, green, and red LEDs 100 can be bonded to the final substrate. After the entire bonding process is completed, the 100 The temporary bonding material is removed from the final substrate to complete the electrical connection of the blue, green, and red light emitting diodes 100.
  • the temporary bonding material mentioned in this disclosure refers to a temporary and removable bracket 200.
  • the bracket 200 can provide temporary bonding of blue, green, and red light emitting diodes 100, and after the bonding process is completed, Can be removed from the final substrate.
  • This temporary bonding material has a high recovery coefficient and high hardness of the mucosa 300, and can withstand temperatures up to 350 degrees Celsius, or other composite materials.
  • step (1) provides a bracket 200 for providing support for the light-emitting component.
  • the material of the bracket 200 includes a wafer composed of sapphire, gallium arsenide, silicon, or silicon carbide. Coating a layer of mucosa 300 on the stent 200 by a printing process;
  • a light emitting diode core particle having a first type and a light emitting diode core particle of a second type different from the first type are adhered to the mucosa 300 in batches according to different categories to obtain light emission.
  • Component of course it should It is understood that this embodiment only uses two types of core particles as examples. The present invention is not limited to the number of categories.
  • the light emitting diode 100 core particles have a semiconductor sequence 110, and the semiconductor sequence 110 includes a first electrical contact electrically connected to the first type semiconductor layer.
  • the layer 121 is a second electrical contact layer 122 electrically connected to the second type semiconductor layer.
  • the first electrical contact layer 121 and the second electrical contact layer 122 are located on a surface of the light emitting diode 100 facing away from the adhesive film 300.
  • step (3) removes the mucosa 300 between the core particles of the light emitting diode 100, and makes the mucosa 300 into a structure having a mesa-shaped protrusion 310 to obtain a light-emitting component.
  • a plurality of mesa-shaped protrusions 310 may be made on the surface of the mucosa before the mucosa 300 adheres the light-emitting diode 100 core particles.
  • a protective layer 500 is coated on the mucosa after step (1), and the protective layer 500 may be selected as a rigid material or a flexible material.
  • the protective layer 500 may be distributed on the mucosa 300 discretely or continuously. When the protection layer 500 is continuously distributed, the position of the protection layer 500 corresponds to the distribution position of the subsequent light emitting diodes 100 to provide better protection effect.
  • the role of the protective layer 500 includes resistance to corrosion, moisture, or oxidation. For example, to prevent the electrical contact layer from oxidizing or to improve the reliability of the light emitting component in a humid environment.
  • the material of the protective layer 500 includes materials such as silicon, silicon oxide, silicon nitride, or epoxy resin, which can improve the reliability of the light emitting device.
  • the protection characteristic in addition to adding the protective layer 500 in a coating manner, the protection characteristic can also be achieved by way of the surface / overall doping of the adhesive film 300, thereby improving the accuracy of the protection process.
  • Another function of the protective layer 500 is to reduce the residual adhesive residue on the light emitting diode 100 during the subsequent peeling of the adhesive film 300, so as to overcome the defect of the optical performance such as brightness or light type caused by the residual adhesive.
  • a sixth embodiment provided on the basis of the fifth embodiment of the present invention provides a method for manufacturing a light emitting device.
  • the sixth embodiment includes step (4).
  • the light-emitting component obtained in step (3) of the fifth embodiment is directly aligned and bonded to the substrate circuit 400 to obtain a light-emitting device.
  • the substrate circuit 400 has a function of controlling any one of the light-emitting diodes 100 on the light-emitting component.
  • the seventh embodiment of the present invention may further include a step (5) on the basis of the sixth embodiment.
  • This step removes the mucosa 300 and / or the stent 200 after bonding, mainly The purpose is to improve the light extraction efficiency.
  • whether to remove the mucous membrane 300 will be selected according to the characteristics of the mucous membrane 300.

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Abstract

一种发光组件，包括：复数个微发光二极管（100），微发光二极管包括半导体层序列（110），半导体层序列（110）至少由第一类型半导体层、第二类型半导体层及位于第一类型半导体层和第二类型半导体层之间的有源发光层组成，与第一类型半导体电连接的第一电接触层（121），与第二类型半导体层电连接的第二电接触层（122），用于向微发光二极管（100）提供支撑的支架（200），支架（200）和发光组件（100）之间设置有用于粘附微发光二极管（100）的粘膜（300），微发光二极管（100）有规则地排布在粘膜（300）上，解决了在应用端，需多次进行微发光二极管（100）转移的问题，只需将发光组件键合到基板上即可构成适于应用的发光装置，提高了应用端的制作效率。

Description

发光组件 技术领域
[0001] 本发明属于半导体制造领域， 具体涉及一种提供给应用端使用的发光组件。
背景技术
[0002] 在目前市场上， MicroLED微发光二极管芯片在诸如生物传感器， 汽车照明， 显示器， 柔性设备， 光通信和视觉真实设备等广泛应用中受到关注。 微型 LED芯 片的微小尺寸和结构， 导致间距减小和外量子效率提高， 是光电器件的革命。 然而， MicroLED芯片的薄型和精巧架构很难转移和耗时。 例如， 如果传输过程 是基于传统的贴片机， 600万个 MicroLED芯片可能会需要 1个月的转移周期。 用 于批量生产过程的微 LED芯片的转移过程效率低。
[0003] 虽然许多公司提供转移解决方案， 但大规模生产中存在一些问题。 在批量生产 中， 每次转移 MicroLED芯片都可能会降低产品的产量。 也就是说， 因为拾取和 放置过程包括传输头和基板的压力和热变化， 过多的转移动作会增加 MicroLED 芯片的接合失败数量。
发明概述
技术问题
问题的解决方案
技术解决方案
[0004] 本发明就是针对背景技术的问题提出一种可行的解决方案， 本发明提供了用于 批量生产的新型微型发光二极管组件。 在芯片制作工艺内， 完成一系列 MicroLE D芯片的转移过程， 然后将带有 B、 G、 R芯粒的薄膜交付给应用端。 该种组件可 以强化应用端产品的质量， 通过此技术方案在应用端可以获得高键合效率的发 光组件。
[0005] 具体来说， 本发明提供了发光组件， 包括： 复数个发光二极管， 发光二极管包 括半导体层序列， 半导体序列至少由第一类型半导体层、 第二类型半导体层及 位于第一类型半导体层和第二类型半导体层之间的有源发光层组成， 与第一类 型半导体层电连接的第一电接触层， 与第二类型半导体层电连接的第二电接触 层，
[0006] 用于向发光二极管提供支撑的支架，
[0007] 支架和发光二极管之间设置有用于粘附发光二极管的连续或者分离的粘膜， 发 光二极管有规则地排布在粘膜上， 粘膜为可抓取发光二极管芯粒的材质。
[0008] 根据本发明， 优选的， 有规则的排布是通过多次向粘膜转移发光二极管而获得 的。
[0009] 根据本发明， 优选的， 粘膜为可移除材料， 移除材料的移除方式包括但不限于 化学分解、 物理分解， 例如采用光分解或者热分解等技术手段。
[0010] 根据本发明， 优选的， 粘膜在粘附发光二极管过程中为稳定结构。
[0011] 根据本发明， 优选的， 粘膜具有固定发光二极管的功能， 并能够在物理或化学 作用下释放所述发光二极管。
[0012] 根据本发明， 优选的， 粘膜的厚度为 5~10(Vm。
[0013] 根据本发明， 优选的， 粘膜表面具有复数个台状凸起， 台状凸起的凸面与发光
Figure imgf000004_0001
[0014] 根据本发明， 优选的， 台状凸起形状为长方体、 圆台、 棱柱或其他柱状结构。
[0015] 根据本发明， 优选的， 台状凸起之间的间距为 20~600—。
[0016] 根据本发明， 优选的， 台状凸起的高度大于发光二极管的厚度。
[0017] 根据本发明， 优选的， 台状凸起的高度为 10~2(Vm。
根据本发明， 优选的， 台状凸起是粘附发光二极管之前或者之后通过至少移除 位于发光二极管之间的部分粘膜形成的。
[0019] 根据本发明， 优选的， 发光二极管侧壁具有由粘膜材料构成的薄膜。
[0020] 根据本发明， 优选的， 薄膜的厚度为 3〜 l(Vm
[0021] 根据本发明， 优选的， 薄膜的折射率为 1.2~2。
[0022] 根据本发明， 优选的， 粘膜的硬度为 15~50J/m 3。
[0023] 根据本发明， 优选的， 粘膜材料包括聚酰亚胺、 紫外光敏胶、 热敏胶、 水溶胶 硅胶。
[0024] 根据本发明， 优选的， 发光二极管的结构包括正装结构、 倒装结构或者垂直结 构。
[0025] 根据本发明， 优选的， 发光二极管在与粘膜接触的一面和 /或在与粘膜接触的 一面相邻的侧壁上具有保护层。
[0026] 根据本发明， 优选的， 保护层的作用包括抗腐蚀、 抗水汽或者抗氧化。
[0027] 根据本发明， 优选的， 保护层材料包括硅、 氧化硅、 氮化硅或者环氧树脂。
[0028] 根据本发明， 优选的， 有规则地排布是通过分批次转移不同的发光二极管实现 的。
[0029] 根据本发明， 优选的， 有规则地排布的组合方式包括不同出光波长组合排布、 不同间距组合排布或者不同尺寸组合排布。
[0030] 根据本发明， 优选的， 不同出光波长组合排布方式包括蓝蓝蓝、 蓝绿红、 蓝绿 绿红、 蓝绿绿红红或蓝绿红红。
[0031] 根据本发明， 优选的， 不同尺寸组合排布方式包括不同厚度、 不同出光面积或 不同形状。
[0032] 根据本发明， 优选的， 发光组件用于键合到基板电路上。
[0033] 根据本发明， 优选的， 发光组件具有一次性从支架上转移复数个发光二极管到 基板电路上的功能。
[0034] 根据本发明， 优选的， 发光二极管具有从 2[im到 5[im、 从 5[im到 10[im、 从 10[i m到 20[im、 从 20[im到 50[im或从 50[im到 100[im的长度。
[0035] 根据本发明， 优选的， 发光二极管具有从 2[im到 5[im、 从 5[im到 10[im、 从 10[i m到 20[im、 从 20[im到 50[im或从 50[im到 100[im的宽度。
[0036] 根据本发明， 优选的， 发光二极管具有从 2[im到 5[im、 从 5[im到 10[im、 从 10[i m到 20[im、 从 20[im到 50[im或从 50[im到 100[im的高度。
[0037] 根据本发明， 优选的， 支架的材料包括蓝宝石、 砷化镓、 硅或者碳化硅。
[0038] 基于本发明公开的发光组件， 本发明还提供了一种发光装置， 包括上述任意一 项的发光组件， 发光装置由基板电路和键合在基板电路上的发光组件组成。
[0039] 本发明提供了制作上述发光组件的工艺方法， 一种发光组件的制作方法， 发光 组件用于将发光二极管键合到基板电路上， 其中发光二极管具有半导体序列， 半导体序列至少由第一类型半导体层、 第二类型半导体层及位于第一类型半导 体层和第二类型半导体层之间的有源发光层组成， 发光二极管还包括与第一类 型半导体层电连接的第一电接触层， 与第二类型半导体层电连接的第二电接触 层， 包括：
[0040] 步骤 （1） 提供一个用于给发光组件提供支撑的支架， 在支架上涂覆一层粘膜
[0041] 步骤 （2） 在粘膜上粘附具有第一波长出光的发光二极管芯粒、 不同于第一波 长的第二波长出光的发光二极管芯粒， 制得发光组件；
[0042] 其中， 步骤 （2） 的发光二极管芯粒粘附到粘膜上为按不同波长分批次进行的
[0043] 根据本发明， 优选的， 在步骤 （2） 之前或者之后移除部分或者全部发光二极 管芯粒之间的粘膜， 将粘膜制作成具有台状凸起的结构。
[0044] 根据本发明， 优选的， 发光二极管芯粒具有与第一类型半导体层电连接的第一 电接触层， 与第二类型半导体层电连接的第二电接触层， 第一电接触层和第二 电接触层位于发光二极管背离粘膜的一侧的表面。
[0045] 本发明还提供了一种发光装置的制作方法， 发光装置具有基板电路， 制作方法 的步骤包括上述任意一种发光组件的制作方法， 再将发光组件的制作方法制得 的发光组件键合到基板电路上。
[0046] 根据本发明， 优选的， 在键合后将粘膜和 /或支架移除。
发明的有益效果
有益效果
[0047] 本发明的有益效果包括：
[0048] （1） 将发光二极管有规则地排布在粘膜上， 作为待售产品， 在应用端提供可 以快速地接合各规格发光组件， 增加应用端的工作效率， 亦可增加芯片的附加 价值。
[0049] （2） 通过多次向粘膜转移不同规格的发光二极管值得发光组件而后一次性向 基板电路键合发光组件， 用以替代现有模式中多次向基板电路转移不同发光二 极管的工艺流程， 降低转移工艺对基板电路例如破坏或者损伤等负面影响。
[0050] （3） 粘膜为可移除的材料， 提供了在发光组件中制作出各种图形的可能性， 以在实际应用中适应不同表面情况的键合基板， 更好地满足客户端的需求。
[0051] (4) 粘膜表面具有台状凸起， 以克服实际应用中键合基板的复杂表面情况对 键合的干扰。
[0052] (5) 台状凸起的高度需大于发光二极管的厚度或者台状凸起的高度为 10~2(V m 避免支架因加工应力而导致薄片翘曲， 造成发光组件在受到压力键合到基板 前， 因为翘曲部分发光二极管触碰到基板表面， 因此通过台状凸起高度设置预 留有安全距离。
[0053] (6) 在发光二极管侧壁具有残留的粘膜薄膜， 一方面是由于工艺残留， 另一 方面也可以通过选择薄膜折射率来设计制作成全反射镜结构。
[0054] (7) 发光二极管在与粘膜接触的一面和 /或在与粘膜接触的一面相邻的侧壁上 具有保护层， 降低或避免发光二极管受工作环境影响， 而导致发光二极管性能 降低。
[0055] 本发明的其它特征和优点将在随后的说明书中阐述， 并且， 部分地从说明书中 变得显而易见， 或者通过实施本发明而了解。 本发明的目的和其他优点可通过 在说明书、 权利要求书以及附图中所特别指出的结构来实现和获得。
对附图的简要说明
附图说明
[0056] 附图用来提供对本发明的进一步理解， 并且构成说明书的一部分， 与本发明的 实施例一起用于解释本发明， 并不构成对本发明的限制。 此外， 附图数据是描 述概要， 不是按比例绘制。
[0057] 图 1为实施例 1的发光组件的结构示意图；
[0058] 图 2为实施例 1的一些变形实施例的发光组件的结构示意图；
[0059] 图 3为实施例 2的发光组件的结构示意图；
[0060] 图 4为实施例 3的发光组件的结构示意图；
[0061] 图 5为实施例 4的发光装置的结构示意图；
[0062] 图 6和图 7为实施例 5的发光组件的制作方法示意图；
[0063] 图 8为根据实施例 7制作的发光装置的结构示意图。
[0064] 图中标示： 100、 发光二极管， 110、 半导体层序列， 、 有源发光层， 121、 第 一电接触层， 122、 第二电接触层， 200、 支架， 300、 粘膜， 310、 台状凸起， 3 11、 平台， 320、 薄膜， 400、 基板电路， 500、 保护层。
发明实施例
本发明的实施方式
[0065] 以下将结合附图及实施例来详细说明本发明的实施方式， 借此对本发明如何应 用技术手段来解决技术问题， 并达成技术效果的实现过程能充分理解并据以实 施。 需要说明的是， 只要不构成冲突， 本发明中的各个实施例以及各实施例中 的各个特征可以相互结合， 所形成的技术方案均在本发明的保护范围之内。
[0066] 应当理解， 本发明所使用的术语仅出于描述具体实施方式的目的， 而不是旨在 限制本发明。 进一步理解， 当在本发明中使用术语“包含”、 ”包括’’时， 用于表明 陈述的特征、 整体、 步骤、 元件、 和 /或的存在， 而不排除一个或多个其他特征 、 整体、 步骤、 元件、 和 /或它们的组合的存在或增加。
[0067] 除另有定义之外， 本发明所使用的所有术语 （包括技术术语和科学术语） 具有 与本发明所属领域的普通技术人员通常所理解的含义相同的含义。 应进一步理 解， 本发明所使用的术语应被理解为具有与这些术语在本说明书的上下文和相 关领域中的含义一致的含义， 并且不应以理想化或过于正式的意义来理解， 除 本发明中明确如此定义之外。
[0068] 参看图 1， 在本发明的第一个实施例中， 提供一种发光组件， 发光组件用于直 接键合到基板电路上， 发光组件作为一种面向应用端的待售品， 包括： 复数个 发光二极管 100， 发光二极管 100包括半导体层序列 110， 半导体序列 110至少由 第一类型半导体层、 第二类型半导体层及位于第一类型半导体层和第二类型半 导体层之间的有源发光层组成， 与第一类型半导体层电连接的第一电接触层 121 ， 与第二类型半导体层电连接的第二电接触层 122，
[0069] 用于向发光二极管 100提供支撑的支架 200， 支架 200的材料包括蓝宝石、 砷化 镓、 硅或者碳化硅等组成的晶片， 利用支架 200稳定地支撑发光二极管 100, 支 架 200在形变上的稳定性可以提供发光二极管 100在键合成发光装置时的良好配 合精度。 作为一种特殊情况的， 支架 200本身表面具有粘附性， 从而兼顾了稳定 支撑和粘附的功能。 [0070] 支架 200和发光二极管 100之间设置有用于将发光二极管 100粘附在支架 200上的 连续或者分离的粘膜 300, 发光二极管 100有规则地排布在粘膜 300上， 在本实施 例中， 有规则地排布是通过主动将发光二极管 100有选择性地分为多批次按一定 规则排布粘合到粘膜 300上， 选取规则包括不同出光波长组合排布、 特定位置排 布或者不同尺寸组合排布等。 本实施例的发光组件具备直接键合到封装基板上 的能力， 减少了将各种不同规格的发光二极管 100分批次直接键合到封装基板电 路 400的次数， 降低了在封装基板上键合失败的概率， 从而降低生产成本， 也方 便客户直接将发光组件安装 /键合到应用器件上。
[0071] 在实际工艺中， 采用的不同出光波长组合排布方式包括蓝蓝蓝、 蓝绿红、 蓝绿 绿红、 蓝绿绿红红或蓝绿红红等等， 利用不同波长及数量的组合来获得不同应 用端的视觉或光学效果， 在该类应用中， 相较于现有技术中分批次向应用端键 合发光二极管 100, 本发明的实施例具有特别明显的效率提升和良率优势。 不同 尺寸组合排布方式根据应用端的需求， 包括不同厚度、 不同出光面积或不同形 状等多种组合方式。
[0072] 在本实施例中， 为了提高粘膜 300的可塑性， 而实现粘膜 300的图形化或者粗化 工艺， 因此选择粘膜 300为可移除材料。 粘膜 300具有固定发光二极管 100的功能 ， 本实施的一些粘膜 300并能够在物理或化学作用下释放发光二极管 100。 例如 为了减少粘膜 300对键合工艺的干扰， 本实施例的粘膜 300表面通过部分选择性 移除而具有复数个台状凸起 310, 台状凸起 310的平台 311表面与发光二极管 100 接触， 台状凸起 310形状可以根据实际需要来选择而不需要受到具体限制， 例如 长方体、 圆台、 棱柱或者其他柱状结构。 粘膜 300的厚度为 5~10(Vm， 台状凸起 3 10之间的间距为 20~600—， 一些实施中， 台状凸起 310的高度可以设计大于发光 二极管 100的厚度， 台状凸起 310的高度为 10~2(Vm。 台状凸起 310是粘附发光二 极管 100之后通过至少移除位于发光二极管 100之间的部分粘膜 300形成的， 例如 移除相对台状凸起 310高度设置的 10~2(Vm深度。
[0073] 粘膜 300在粘附住发光二极管 100至完成最终键合到基板电路 400的过程中为稳 定结构， 可以较长时间提供稳定的化学或物理状态、 例如一定范围的温度耐性 、 一定的振动耐性或者抗空气氧化的能力， 保护层对接触层和半导体序列提供 保护， 以便在键合到封装基板时可以高效、 准确匹配且具有良好可靠性地完成 键合工艺。 在本实施例中， 发光二极管 100是粘附到粘膜 300上的， 利用粘膜 300 的粘附性和 /或柔性夹持力对发光二极管提供支撑， 发光二极管 100侧壁具有由粘 膜材料构成的薄膜 320。 粘膜 300材料的选择范围包括聚酰亚胺、 紫外光敏胶、 热敏胶、 水溶胶、 硅胶。 在本实施例中， 发光二极管 100的结构不限于正装结构 、 倒装结构或者垂直结构， 为了提高取光效率和方便进行键合， 本实施例优选 为倒装结构。
[0074] 在第一个实施例中， 发光二极管 100主要选取的是微小尺寸的微发光二极管， 例如发光二极管具有从 2[im到 5[im、 从 5[im到 10[im、 从 10[im到 20[im、 从 20[im到 50[im或从 50[im到 100[im的长度， 发光二极管具有从 2[im到 5[im、 从 5[im到 10[im 、 从 10[im到 20[im、 从 20[im到 50[im或从 50[im到 100[im的宽度， 发光二极管具有 从 2[im到 5[im、 从 5[im到 10[im、 从 10[im到 20[im、 从 20[im到 50[im或从 50[im到 10
Opm的高度。
[0075] 参看图 2, 在第一个实施例的一些变形实施例中， 利用薄膜 320做一些特殊设计 以提高性能， 例如将薄膜 320制作成全反射薄膜， 或者增透膜。 例如本变形实施 例中薄膜 320的厚度小于 3pm， 薄膜 320的折射率为 1.2~2， 该实施例中薄膜 320由 粘膜 300构成的， 为了更稳定的附着在发光二极管 100的侧壁上， 其硬度优选为 1 5~50J/m 3。 薄膜 320的折射率特性可以有粘膜 300本身材料特性决定， 也可以由 通过向粘膜 300的局部或整体掺杂而实现该特性。
[0076] 参看图 3 , 在本发明的第二个实施例中， 为了增强发光组件的可靠性， 发光二 极管 100在与粘膜 300接触的一面和 /或在与粘膜 300接触的一面相邻的侧壁上设置 有保护层 500, 保护层 500的作用包括抗腐蚀、 抗水汽或者抗氧化。 例如防止电 接触层氧化或者在潮湿环境下提高发光组件的可靠性。 保护层 500材料包括硅、 氧化硅、 氮化硅或者环氧树脂等可提升发光组件可靠性能的材料。
[0077] 作为第二个实施例的一些变形方式， 保护层 500可以用封装胶或者波长转换材 料替代， 兼具简化封装工艺和保护发光二极管的功能。
[0078] 参看图 4, 通过组合第一个实施例的一些变形实施例与第二个实施例的方案特 征而提供了本发明的第三个实施例， 即该实施例的粘膜 300材料具有第一个实施 例的一些变形实施例的光学特性， 同时粘膜 300表面设置有保护层 500, 特别是 当例如粘膜 300采用对发光二极管 100性能有影响的材料， 需通过起隔绝作用的 保护层 500对发光二极管 100提供保护。
[0079] 参看图 5 , 在本发明的第四个实施例主要提供了一种发光组件的应用方式， 该 实施例公开了一种发光装置， 包括上述实施例中任意一个实施例的发光组件， 将发光组件键合在基板电路 400上， 基板电路 400例如具有与发光组件中发光二 极管 100对应数目的开关， 分别对每个发光二极管 100的亮暗进行控制， 当然基 板电路 400根据应用端的需要， 也可以包括一个或者多个串联电路， 而构成发光 装置。
[0080] 在本发明的第五个实施例中， 本发明主要提供的一种发光组件的制作方法， 发 光组件用于键合在基板电路 400上， 包括：
[0081] 本工艺方法在于提供一个暂时性接合材料作为支架 200， 暂时性固定发光二极 管 100, 且发光二极管 100的排列可搭配最终应用端的基板电路 400的样貌来设计 ， 由发光二极管 100的巨量转移工艺， 来进行有效率的排列与转移。 巨量转移工 艺可将蓝、 绿、 红色光的发光二极管 100, 分成复数次， 将蓝绿红发光二极管 10 0放置于暂时性接合材料上， 之后， 将此含有蓝、 绿、 红色光发光二极管 100的 暂时性支架与最终基板对位， 并且作一次性热压接合， 如此一来即可将蓝、 绿 、 红发光二极管 100键合在最终基板上， 待整个键合工艺完成后， 可将暂时性接 合材料从最终基板上移除，以完成蓝、 绿、 红发光二极管 100的电性连接。
[0082] 本揭露案所提的暂时接合材料是指一个暂时性且可移除的支架 200， 此支架 200 可以提供蓝、 绿、 红光发光二极管 100的暂时性接合， 并且在接合工艺完成后， 可从最终基板上移除。 此暂时接合材料具有高回复系数且高硬度的粘膜 300, 并 可以耐受温度至 350摄氏度， 或者其他的复合式材料。
[0083] 与附图相对应的， 参看图 6 , 步骤 （1） 提供一个用于给发光组件提供支撑的支 架 200， 支架 200的材料包括蓝宝石、 砷化镓、 硅或者碳化硅等组成的晶片， 通 过刷印工艺在支架 200上涂覆一层粘膜 300;
[0084] 参看图 7 , 步骤 （2） 在粘膜 300上按不同类别分批次粘附具有第一类的发光二 极管芯粒、 不同于第一类的第二类发光二极管芯粒， 制得发光组件， 当然应该 理解的， 本实施例仅以两类芯粒举例， 本发明不局限于类别的数目， 发光二极 管 100芯粒具有半导体序列 110， 半导体序列 110包括与第一类型半导体层电连接 的第一电接触层 121， 与第二类型半导体层电连接的第二电接触层 122, 第一电 接触层 121和第二电接触层 122位于发光二极管 100背离粘膜 300的一侧的表面。
[0085] 回看图 1， 步骤 （3） 移除发光二极管 100芯粒之间的粘膜 300， 将粘膜 300制作 成具有台状凸起 310的结构， 制得发光组件。 作为该步骤的替代方案， 可在粘膜 300粘附发光二极管 100芯粒之前， 即将粘膜表面制作出复数个台状凸起 310。
[0086] 在第五个实施例的一些变形实施例中， 在步骤 （1） 之后的粘膜上涂覆一层保 护层 500, 保护层 500可以选择为刚性材料也可以是柔性的材料。 保护层 500可以 离散或者连续地分布在粘膜 300上。 当保护层 500连续分布时， 保护层 500的位置 与后续发光二极管 100分布位置相对应， 用以提供更佳的保护效果。 保护层 500 的作用包括抗腐蚀、 抗水汽或者抗氧化。 例如防止电接触层氧化或者在潮湿环 境下提高发光组件的可靠性。 保护层 500材料包括硅、 氧化硅、 氮化硅或者环氧 树脂等可提升发光组件可靠性能的材料。 在该变形实施例中， 除了采用涂覆的 方式添加保护层 500, 也可以通过粘膜 300表面 /整体掺杂的方式实现该保护特性 ， 而提高该保护工艺的精度。 保护层 500另外一种作用在于减少在其后剥离粘膜 300工艺中， 避免或者减少残胶在发光二极管 100上的残留， 以克服残胶导致例 如亮度或者光型等光性能缺陷。
[0087] 在本发明的第五个实施例的基础上提供的第六个实施例， 提供了一种发光装置 的制作方法， 第六个实施例包括步骤 （4） ， 回看图 5 , 将第五个实施例的步骤 （3） 得到的发光组件直接对齐键合到基板电路 400上， 制得发光装置， 基板电 路 400具备分别控制发光组件上任一发光二极管 100的功能。
[0088] 参看图 8 , 本发明的第七个实施例在第六个实施例基础上， 还可以包括步骤 （5 ） ， 该步骤在键合后将粘膜 300和 /或支架 200移除， 主要目的在提高出光效率， 在该实施例中， 将根据粘膜 300的特性选择是否移除粘膜 300。
[0089] 以上所述仅是本发明的优选实施方式， 应当指出， 对于本技术领域的技术人员 ， 在不脱离本发明原理的前提下， 还可以做出若干改进和润饰， 这些改进和润 饰也应视为本发明的保护范围。

Claims

权利要求书
[权利要求 1] 发光组件， 包括： 复数个发光二极管， 发光二极管包括半导体层序列 ， 半导体序列至少由第一类型半导体层、 第二类型半导体层及位于第 一类型半导体层和第二类型半导体层之间的有源发光层组成， 与第一 类型半导体层电连接的第一电接触层， 与第二类型半导体层电连接的 第二电接触层，
用于向发光二极管提供支撑的支架，
其特征在于， 支架和发光二极管之间设置有用于粘附发光二极管的连 续或者分离的粘膜， 发光二极管有规则地排布在粘膜上。
[权利要求 2] 根据权利要求 1所述的发光组件， 其特征在于， 有规则的排布是通过 多次向粘膜转移发光二极管而获得的。
[权利要求 3] 根据权利要求 1所述的发光组件， 其特征在于， 粘膜为可移除材料。
[权利要求 4] 根据权利要求 1所述的发光组件， 其特征在于， 粘膜在粘附发光二极 管过程中为稳定结构。
[权利要求 5] 根据权利要求 1所述的发光组件， 其特征在于， 粘膜具有固定发光二 极管的功能， 并能够在物理或化学作用下释放发光二极管。
[权利要求 6] 根据权利要求 1所述的发光组件， 其特征在于， 粘膜的厚度为 5~10(V m。
[权利要求 7] 根据权利要求 i所述的发光组件， 其特征在于， 粘膜表面具有复数个 台状凸起， 台状凸起的凸面与发光二极管接触。
[权利要求 8] 根据权利要求 7所述的发光组件， 其特征在于， 台状凸起形状为长方 体、 圆台、 棱柱或其他柱状结构。
[权利要求 9] 根据权利要求 7所述的发光组件， 其特征在于， 台状凸起之间的间距 为 20~600[xm。
[权利要求 10] 根据权利要求 7所述的发光组件， 其特征在于， 台状凸起的高度大于 发光二极管的厚度。
[权利要求 11] 根据权利要求 7所述的发光组件， 其特征在于， 台状凸起的高度为 10~
20[xm。
[权利要求 12] 根据权利要求 7所述的发光组件， 其特征在于， 台状凸起是粘膜粘附 发光二极管之前或者之后通过至少移除位于发光二极管之间的部分粘 膜形成的。
[权利要求 13] 根据权利要求 12所述的发光组件， 其特征在于， 发光二极管侧壁具有 由粘膜材料构成的薄膜。
[权利要求 14] 根据权利要求 13所述的发光组件， 其特征在于， 薄膜的厚度为 3~1(V m。
[权利要求 15] 根据权利要求 13所述的发光组件， 其特征在于， 薄膜的折射率为 1.2~
2。
[权利要求 16] 根据权利要求 1或 13所述的发光组件， 其特征在于， 粘膜的硬度为 15~
50J/m 3。
[权利要求 17] 根据权利要求 1所述的发光组件， 其特征在于， 粘膜材料包括聚酰亚 胺、 紫外光敏胶、 热敏胶、 水溶胶、 硅胶。
[权利要求 18] 根据权利要求 1所述的发光组件， 其特征在于， 发光二极管的结构包 括正装结构、 倒装结构或者垂直结构。
[权利要求 19] 根据权利要求 1所述的发光组件， 其特征在于， 发光二极管在与粘膜 接触的一面和 /或在与粘膜接触的一面相邻的侧壁上具有保护层。
[权利要求 20] 根据权利要求 19所述的发光组件， 其特征在于， 保护层的作用包括抗 腐蚀、 抗水汽或者抗氧化。
[权利要求 21] 根据权利要求 19所述的发光组件， 其特征在于， 保护层材料包括硅、 氧化硅、 氮化硅或者环氧树脂。
[权利要求 22] 根据权利要求 1所述的发光组件， 其特征在于， 有规则地排布是通过 分批次转移不同的发光二极管实现的。
[权利要求 23] 根据权利要求 1所述的发光组件， 其特征在于， 有规则地排布的组合 方式包括不同出光波长组合排布、 不同间距组合排布或者不同尺寸组 合排布。
[权利要求 24] 根据权利要求 23所述的发光组件， 其特征在于， 不同尺寸组合排布方 式包括不同厚度、 不同出光面积或不同形状。
[权利要求 25] 根据权利要求 1所述的发光组件， 其特征在于， 发光组件用于键合到 基板电路上。
[权利要求 26] 根据权利要求 25所述的发光组件， 其特征在于， 在发光组件， 发光组 件具有一次性从支架上转移复数个发光二极管到基板电路上的功能。
[权利要求 27] 根据权利要求 1所述的发光组件， 其特征在于， 发光二极管具有从 2^
m到 5[im、 从 5[im到 10[im、 从 10[im到 20[im、 从 20[im到 50[im或从 50[i m到 100[im的长度。
[权利要求 28] 根据权利要求 1所述的发光组件， 其特征在于， 发光二极管具有从 2^
m到 5[im、 从 5[im到 10[im、 从 10[im到 20[im、 从 20[im到 50[im或从 50[i m到lOOpm的宽度。
[权利要求 29] 根据权利要求 1所述的发光组件， 其特征在于， 发光二极管具有从 2^
m到 5[im、 从 5[im到 10[im、 从 10[im到 20[im、 从 20[im到 50[im或从 50[i m到lOOpm的高度。
[权利要求 30] 根据权利要求 1所述的发光组件， 其特征在于， 支架的材料包括蓝宝 石、 砷化镓、 硅或者碳化硅。
[权利要求 31] 一种发光装置， 包括权利要求 1至权利要求 30中任意一项的发光组件 ， 发光装置包括基板电路和键合在基板电路上的发光组件。
[权利要求 32] 一种发光组件的制作方法， 发光组件用于将发光二极管键合到基板电 路上， 其中发光二极管具有半导体序列， 半导体序列至少由第一类型 半导体层、 第二类型半导体层及位于第一类型半导体层和第二类型半 导体层之间的有源发光层组成， 发光二极管还包括与第一类型半导体 层电连接的第一电接触层， 与第二类型半导体层电连接的第二电接触 层， 包括：
步骤 （1） 提供一个用于给发光组件提供支撑的支架， 在支架上涂覆 一层粘膜；
步骤 （2） 在粘膜上粘附具有第一类的发光二极管芯粒、 不同于第一 类的第二类的发光二极管芯粒， 制得发光组件； 其特征在于， 步骤 （2） 的发光二极管芯粒粘附到粘膜上为按不同类 别分批次进行的。
[权利要求 33] 根据权利要求 32所述的一种发光组件的制作方法， 其特征在于， 在步 骤 （2） 之前或者之后移除部分或全部发光二极管芯粒之间的粘膜， 将粘膜制作成具有台状凸起的结构。
[权利要求 34] 根据权利要求 32所述的一种发光组件的制作方法， 其特征在于， 第一 电接触层和第二电接触层位于发光二极管背离粘膜的一侧的表面。
[权利要求 35] 根据权利要求 32所述的一种发光组件的制作方法， 其特征在于， 不同 类别包括不同出光波长或者不同尺寸组合排布。
[权利要求 36] 一种发光装置的制作方法， 发光装置具有基板电路， 制作方法的步骤 包括权利要求 32~35中任意一项发光组件的制作方法， 其特征在于， 将发光组件的制作方法制得的发光组件键合到基板电路上。
[权利要求 37] 根据权利要求 36所述的一种发光装置的制作方法， 其特征在于， 在键 合后将粘膜和 /或支架移除。
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