WO2019233391A1 - Oled基板及显示面板、显示装置 - Google Patents

Oled基板及显示面板、显示装置 Download PDF

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Publication number
WO2019233391A1
WO2019233391A1 PCT/CN2019/089903 CN2019089903W WO2019233391A1 WO 2019233391 A1 WO2019233391 A1 WO 2019233391A1 CN 2019089903 W CN2019089903 W CN 2019089903W WO 2019233391 A1 WO2019233391 A1 WO 2019233391A1
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Prior art keywords
oled
auxiliary cathode
sub
disposed
cathode
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PCT/CN2019/089903
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English (en)
French (fr)
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徐攀
林奕呈
王玲
盖翠丽
王国英
李永谦
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京东方科技集团股份有限公司
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Priority to US16/623,712 priority Critical patent/US10964772B2/en
Publication of WO2019233391A1 publication Critical patent/WO2019233391A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80524—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to an OLED substrate, a display panel, and a display device.
  • OLED display panels have attracted more and more attention due to their advantages such as thinness, lightness, active light emission, low cost, easy formation of flexible structures, and wide viewing angles.
  • an OLED substrate has a display area and a peripheral area located outside the display area.
  • the OLED substrate includes a substrate, a plurality of OLED devices disposed on one side of the substrate and located in the display area, and an OLED device disposed on one side of the substrate and located at least in the peripheral area.
  • Each OLED device includes a reflective anode, an organic material functional layer, and a transparent cathode that are sequentially disposed in a direction away from the substrate.
  • a portion of the auxiliary cathode located in the peripheral region is electrically connected to the transparent cathodes of the plurality of OLED devices, and the resistivity of the auxiliary cathode is smaller than that of the transparent cathodes of the plurality of OLED devices.
  • the material of the auxiliary cathode is a metal material.
  • the display area is a polygonal area.
  • the portion of the auxiliary cathode located in the peripheral region includes: a sub-portion of the auxiliary cathode located outside each side in the polygonal region; wherein each of the sub-portions is transparent to the plurality of OLED devices The cathode is electrically connected.
  • the OLED substrate further comprises: a cathode power source electrically connected to at least one of the sub-portions of the auxiliary cathode.
  • the auxiliary cathode includes a plurality of parallel first metal lines and a plurality of parallel second metal lines, and the plurality of first metal lines and the plurality of second metal lines are intersected.
  • Each of the first metal lines and each of the second metal lines includes a portion located in the display area, and a portion extending from the display area to the peripheral area.
  • the display region includes a plurality of sub-pixel regions distributed in an array, and each OLED device is disposed in each of the sub-pixel regions.
  • a corresponding one of the first metal lines is provided in the sub-pixel area of each N rows; a corresponding one of the second metal lines is provided in the sub-pixel area of each M column; wherein N and M are positive integers.
  • the auxiliary cathode is disposed between the substrate and the plurality of OLED devices.
  • the display region includes a plurality of sub-pixel regions distributed in an array, and each OLED device is disposed in each of the sub-pixel regions.
  • the OLED substrate further includes a driving circuit disposed in each sub-pixel region, and the driving circuit is electrically connected to the reflective anode of the OLED device in the corresponding sub-pixel region.
  • the auxiliary cathode is disposed between the plurality of OLED devices and the corresponding driving circuit.
  • the OLED substrate further includes a passivation layer and a first organic layer sequentially disposed on a side of the driving circuit near the auxiliary cathode.
  • the auxiliary cathode is disposed on a surface of the first organic layer facing away from the passivation layer.
  • the OLED substrate further includes a second organic layer disposed on a side of the auxiliary cathode facing away from the first organic layer.
  • the plurality of OLED devices are disposed on a surface of the second organic layer facing away from the auxiliary cathode.
  • the OLED substrate further includes a plurality of gate lines and a plurality of data lines.
  • Each gate line is electrically connected to a plurality of driving circuits in a sub-pixel region of at least one row
  • each data line is electrically connected to a plurality of driving circuits in a sub-pixel region of at least one column.
  • Each first metal line is parallel to the plurality of gate lines
  • each second metal line is parallel to the plurality of data lines.
  • the OLED substrate further includes an encapsulation layer disposed on a side of the transparent cathodes of the plurality of OLED devices facing away from the substrate.
  • a display panel in another aspect, includes the OLED substrate according to any of the above embodiments.
  • a display device in another aspect, includes a display panel according to any of the above embodiments.
  • FIG. 1 is a schematic diagram of an OLED substrate according to some embodiments of the present disclosure.
  • FIG. 2 is a schematic diagram of another OLED substrate according to some embodiments of the present disclosure.
  • FIG. 3 is an equivalent schematic diagram of an auxiliary cathode supplying power to a transparent cathode in the OLED substrate shown in FIG. 2;
  • FIG. 4 is a schematic diagram of still another OLED substrate according to some embodiments of the present disclosure.
  • FIG. 5 is a schematic partial cross-sectional view of an OLED substrate according to some embodiments of the present disclosure.
  • FIG. 6 is a schematic partial cross-sectional view of another OLED substrate according to some embodiments of the present disclosure.
  • FIG. 7 is a schematic diagram of a display device according to some embodiments of the present disclosure.
  • each OLED device in the OLED display panel adopts a top emission structure, that is, the cathode of each OLED device adopts a transparent cathode, which can effectively achieve a high PPI.
  • each OLED device uses a transparent cathode
  • the resistivity of each transparent cathode is large, which makes it easy to make the transparent cathode of each OLED device in a different area in the OLED display panel.
  • different degrees of voltage change such as voltage drop (IR drop) or voltage rise (IR rise)
  • IR drop voltage drop
  • IR rise voltage rise
  • the OLED substrate has a display area AA and a peripheral area BB located on the periphery of the display area AA.
  • the OLED substrate includes a substrate 10, a plurality of OLED devices disposed on one side of the substrate 10 and located in the display area AA 2, and an auxiliary cathode 4 disposed on one side of the substrate 10 and located at least in the peripheral area BB.
  • Each OLED device 2 includes a reflective anode 21, an organic material functional layer 22, and a transparent cathode 23, which are sequentially disposed in a direction away from the substrate 10.
  • a portion of the auxiliary cathode 4 located in the peripheral region BB is electrically connected to the transparent cathodes 23 of the plurality of OLED devices 2, and the resistivity of the auxiliary cathode 23 is smaller than that of the transparent cathodes 23 of the plurality of OLED devices 2.
  • the display area AA of the OLED display substrate includes a plurality of sub-pixel regions distributed in an array, and an OLED device 2 is disposed in each of the sub-pixel regions.
  • FIG. 1 only illustrates the transparent cathode 21 in the OLED device, and not all the structures of the OLED device are illustrated.
  • the reflective anodes 21 of the OLED devices 2 located in different sub-pixel regions are insulated from each other.
  • the organic material functional layer 22 of each OLED device 2 includes at least one light emitting layer, that is, the organic material functional layer 22 of each OLED device 2 can emit light under the control of the corresponding reflective anode 21 and transparent cathode 23.
  • the organic material functional layer 23 includes a hole transporting layer, a light emitting layer, and an electron transporting layer which are sequentially stacked; or the organic material functional layer 23 includes a hole injection layer, a hole transporting layer, a light emitting layer, Electron transport layer and electron injection layer.
  • each OLED device 2 in the OLED display substrate adopts a top-emission type structure
  • the transparent cathodes of each OLED device 2 are shared, that is, the transparent cathodes of each OLED device 2 are connected to each other as a layer structure.
  • the transparent cathode of each OLED device 2 extends from the display area AA to the peripheral area BB, which facilitates the electrical connection between the portion of the auxiliary cathode 4 located in the peripheral area BB and the transparent cathodes 23 of the plurality of OLED devices 2.
  • the material of the transparent cathode 21 of each OLED device 2 is selected from transparent conductive materials such as indium tin oxide (ITO) or indium zinc oxide (IZO).
  • the auxiliary cathode 4 is made of a material having a resistivity lower than that of the transparent cathode 21.
  • the material of the auxiliary cathode 4 is a metal material.
  • the material of the auxiliary cathode 4 is selected from one or a combination of aluminum (Al), molybdenum (Mo), copper (Cu), silver (Ag), chromium (Cr), gold (Pt), or a combination thereof.
  • the shape of the display area AA can be set according to actual needs.
  • the display area AA is polygonal
  • the portion of the auxiliary cathode 4 located in the peripheral area BB includes a sub-portion of the auxiliary cathode 4 located outside each side of the display area AA (polygonal area).
  • the OLED substrate further includes a cathode power source 60 electrically connected to at least one of the sub-portions of the auxiliary cathode 4. Providing at least one cathode power source 60 in the OLED substrate is beneficial to realize single-side supply of the cathode power source 60, thereby facilitating the production of a narrow-frame and low-cost OLED display panel.
  • the display area AA is rectangular, and the portion of the auxiliary cathode 4 located in the peripheral area BB includes the first sub-section 41, the second sub-section 42, the third sub-section 43, and the fourth sub-section 44 shown in FIG. Among them, the second sub-portion 42 is electrically connected to the cathode power source 60, and the cathode power source 60 is supplied on one side.
  • the resistivity of the auxiliary cathode 4 is smaller than that of the transparent cathode 23, that is, the impedance of the auxiliary cathode 4 is small or small.
  • the voltage provided by the cathode power source 60 passes through the auxiliary cathode 4
  • Each sub-portion located in the peripheral area BB is input to a plurality of nearby transparent cathodes 23, which is equivalent to a cathode power source 60 provided on the outside of each side of the display area AA, and inputting voltages to the corresponding plurality of transparent cathodes 23, An example is shown in Figure 3.
  • the plurality of transparent cathodes 23 (which extend to the portion in the peripheral region BB) that are directly electrically connected to the sub-portions of the auxiliary cathode 4 located in the peripheral region BB have substantially the same potential, thereby facilitating reduction in the OLED display panel.
  • the voltage changes of the transparent cathodes 23 of the OLED devices 2 located in different regions are different to ensure uniform display brightness of the OLED display panel.
  • the transparent cathode 23 in the middle position of the display area 20 in the OLED substrate still has the largest voltage change due to the impedance of each transparent cathode 23.
  • the maximum voltage change that can occur on each transparent cathode 23 in the OLED substrate provided by some embodiments of the present disclosure can still be greatly reduced, so Accepted.
  • the OLED substrate of some embodiments of the present disclosure is applied to a non-super-large-sized display panel, especially a medium-to-large-sized display panel, even if there is still a voltage change on several transparent cathodes 23, the display on the display panel is The effect of uniformity of brightness is small.
  • the auxiliary cathode 4 includes a plurality of parallel first metal lines 401 and a plurality of parallel second metal lines 402, and the plurality of first metal lines 401 and the plurality of first metal lines 401 The two metal lines 402 are intersected; wherein each of the first metal lines 401 and each of the second metal lines 402 includes: a portion located in the display area AA, and a portion extending from the display area AA to the peripheral area BB; That is, each first metal line 401 and each second metal line 402 extend from the display area AA to the peripheral area BB, and the auxiliary cathode 4 is arranged in a grid shape. In addition, each first metal line 401 and each second metal line 402 are connected to each other.
  • the auxiliary cathode 4 is made into a grid shape.
  • the impedance of the auxiliary cathode 4 can be further reduced by controlling the line width of each first metal line 401 and each second metal line 402.
  • the auxiliary cathode 4 adopts a grid shape, and its manufacturing process is simple and technically difficult.
  • a first metal line 401 is provided in each N pixel sub-pixel area, and a second metal line 402 is provided in every M column sub-pixel area; where N and M Both are positive integers. That is to say, the sub-pixel regions of all rows in the display area AA are divided into multiple groups, each group including N rows of sub-pixel regions, and then a first metal line 401 is set in the corresponding region of each group. Similarly, the sub-pixel areas of all columns in the display area AA are divided into multiple groups, each group including M columns of sub-pixel areas, and then a second metal line 402 is set in the corresponding area of each group. For example, N and M are equal, for example, N and M are both 1.
  • each first metal line 401 and each second metal line 402 can be set as wide as possible within the allowable range, so as to ensure that each of the first metal line 401 and each of the second metal lines 402 are equal in width. Have the smallest possible impedance.
  • the auxiliary cathode 4 is disposed between the substrate 10 and the aforementioned plurality of OLED devices 2. Since each OLED device 2 is a top-emission OLED device, the auxiliary cathode 40 is located between the substrate 10 and each OLED device 2 to ensure that the auxiliary cathode 4 does not adversely affect the aperture ratio of the OLED substrate, so as needed The line width of each first metal line 401 and each second metal line 402 is set to ensure that the impedance of the auxiliary cathode 4 is reduced.
  • the auxiliary cathode 4 is formed first on the side of the substrate 10, and then each OLED device 2 is formed on the side of the auxiliary cathode 4 facing away from the substrate 10, which can ensure the production of the auxiliary cathode 4.
  • the process and the manufacturing process of the OLED device are independent of each other and are not limited to each other.
  • the OLED substrate further includes a driving circuit disposed on the substrate 10 and located in each sub-pixel region.
  • the driving circuit is corresponding to the OLED device 2 in the corresponding sub-pixel region.
  • the reflective anode 21 is electrically connected.
  • the OLED substrate further includes a plurality of gate lines and a plurality of data lines (not shown in the figure), wherein each gate line is electrically connected to a plurality of driving circuits in a sub-pixel area of at least one row, The data line is electrically connected to a plurality of driving circuits in the sub-pixel region of at least one column.
  • Each driving circuit is configured to drive a corresponding OLED device 2 to emit light under the control of signals provided by the corresponding gate and data lines.
  • each first metal line 401 in the auxiliary cathode 4 is disposed in parallel with the plurality of gate lines, and each second metal line 402 in the auxiliary cathode 4 is disposed in parallel with the plurality of data lines, which is beneficial to simplifying the auxiliary cathode 4 wiring design to facilitate the production of auxiliary cathode 4.
  • each driving circuit includes a driving transistor 70, and each driving transistor 70 includes a gate 71, a gate insulating layer 72, an active layer 73, a source 74, and a drain 75, wherein a drain of the driving transistor 70
  • the electrode 75 is electrically connected to the reflective anode 21 of the corresponding OLED device 2. For example, as shown in FIG.
  • each driving transistor 70 includes: an active layer 73, a gate insulating layer 72, a gate 71, an interlayer insulating layer 91, a source 74, and The drain electrode 75, wherein the source electrode 74 and the drain electrode 75 are disposed on the same layer, and the source electrode 74 and the drain electrode 75 are respectively electrically connected to the active layer 73 through corresponding via holes provided on the interlayer insulating layer 91.
  • the material of the active layer 73 is an oxide semiconductor, a light shielding layer 80 needs to be provided between the active layer 73 and the substrate 10 to prevent external light signals from affecting the performance of the active layer 73. .
  • each driving transistor 70 is taken as an example for illustration, but some embodiments of the present disclosure are not limited thereto.
  • the structure type of each driving transistor 70 may be selected according to actual requirements.
  • each driving circuit is not limited to including a driving transistor 70.
  • each driving circuit further includes at least one thin film transistor or at least one storage capacitor connected to the driving transistor 70.
  • the structure of the driving circuit is not limited, and the driving circuit is limited to having a function of driving the corresponding OLED device to emit light.
  • the plurality of gate lines are disposed on the same layer as the gate 71 of the driving transistor 70, and the plurality of data lines are disposed on the same layer as the source 74 and the drain 75 of the driving transistor 70.
  • the same layer setting refers to that both are made of the same material and are formed in one patterning process.
  • the patterning process includes a photolithography process, or a process including a photolithography process and an etching step.
  • the photolithography process refers to a process including film formation (for example, chemical vapor deposition film formation, chemical vapor deposition, abbreviated as CVD), exposure, development, and the like, and forming a pattern by using a photoresist, a mask, and an exposure machine.
  • the auxiliary cathode 4 is disposed between the plurality of OLED devices 2 and corresponding driving circuits (for example, the driving transistor 70).
  • the OLED substrate further includes a passivation layer 92 and a first organic layer 93 that are sequentially disposed on a side of the driving circuit near the auxiliary cathode 4.
  • the auxiliary cathode 4 is disposed on a surface of the first organic layer 93 facing away from the passivation layer 92.
  • the auxiliary cathode 4 is disposed between a plurality of OLED devices 2 and corresponding driving circuits (such as the driving transistor 70).
  • the manufacturing process of the corresponding OLED substrate is: firstly forming each driving circuit, then forming the auxiliary cathode 4, and then forming the corresponding OLED devices in order.
  • 2 is a reflective anode 21, an organic material functional layer 22, and a transparent cathode 23.
  • a passivation layer 92 and a first organic layer 93 are provided between the auxiliary cathode 4 and each driving circuit, which can increase the distance between the auxiliary cathode 4 and each driving circuit, thereby reducing the auxiliary cathode 4 and the lower portion thereof ( Coupling capacitance between electrodes or wires near the substrate 10).
  • a passivation layer 92 is provided on the side of each driving circuit near the auxiliary cathode 4. The passivation layer 92 can be used to protect circuit elements such as the driving transistor 70 in the driving circuit to prevent water and oxygen from entering.
  • the OLED substrate further includes a second organic layer 94 disposed on a side of the auxiliary cathode 4 facing away from the first organic layer 93.
  • the plurality of OLED devices are disposed on a surface of the second organic layer facing away from the auxiliary cathode.
  • the second organic layer 94 can play a planarization role to ensure that each OLED device 2 is fabricated on a flat surface.
  • each sub-pixel region of the OLED substrate is generally defined by a pixel defining layer 95, that is, the organic material functional layer 22 of each OLED device 2 in the OLED substrate is generally formed in the pixel defining layer 95 correspondingly. Within an open area.
  • the portion of the auxiliary cathode 4 located in the peripheral region BB and The transparent cathodes 23 of the plurality of OLED devices 2 are electrically connected, and it is shown that a portion of the auxiliary cathode 4 located in the peripheral region BB passes through a plurality of via holes 50 provided in both the second organic layer 94 and the pixel defining layer 95. Is electrically connected to a portion of the transparent cathodes 23 of the plurality of OLED devices 2 extending into the peripheral region BB. In some examples, as shown in FIG. 1, the plurality of vias 50 corresponding to the auxiliary cathode 4 passes through the peripheral region BB and are evenly distributed.
  • the OLED substrate further includes an encapsulation layer 100 disposed on a side of the transparent cathodes 23 of the plurality of OLED devices 2 facing away from the substrate 10.
  • the packaging layer 100 is made of the same material as the passivation layer 92, for example, it is formed by a chemical vapor deposition (Chemical Vapor Deposition, CVD for short) process.
  • an encapsulation layer 100 is provided on a side of the transparent cathode 23 of each OLED device 2 facing away from the substrate 10. The encapsulation layer 100 can be used to encapsulate and protect each OLED device 2 to effectively improve the use of each OLED device 2. life.
  • the display panel includes the OLED substrate described in some embodiments described above.
  • the display panel can be applied to products or components with a display function such as a display, a television, a digital photo frame, a mobile phone or a tablet.
  • the display panel has the same beneficial effects as the OLED substrate, and is not repeated here.
  • the display device 1000 includes the display panel 1001 according to the above embodiment.
  • This display device has the same beneficial effects as the above-mentioned display panel, which will not be repeated here.
  • the display device includes products or components with display functions such as electronic paper, mobile phones, tablet computers, televisions, displays, notebook computers, digital photo frames, and navigators.

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  • Electroluminescent Light Sources (AREA)
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Abstract

一种OLED基板，包括：衬底、设置于所述衬底的一侧且位于所述显示区内的多个OLED器件、以及设置于所述衬底的一侧且至少位于所述周边区内的辅助阴极。每个OLED器件包括沿远离所述衬底的方向依次设置的反射阳极、有机材料功能层和透明阴极。所述辅助阴极位于所述周边区内的部分与所述多个OLED器件的透明阴极电连接，且所述辅助阴极的电阻率小于所述多个OLED器件的透明阴极的电阻率。

Description

OLED基板及显示面板、显示装置
本申请要求于2018年06月07日提交中国专利局、申请号为201810579088.5、申请名称为“一种OLED基板及显示面板”的中国专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及显示技术领域，尤其涉及一种OLED基板及显示面板、显示装置。
背景技术
有机发光二极管(Organic Light Emitting Diode，简称OLED)显示面板由于具有薄、轻、主动发光、成本低、易形成柔性结构、视角宽等优点，因而越来越受到关注。
发明内容
一方面，提供一种OLED基板。所述OLED基板具有一显示区和位于所述显示区外围的一周边区。所述OLED基板包括：衬底、设置于所述衬底的一侧且位于所述显示区内的多个OLED器件、以及设置于所述衬底的一侧且至少位于所述周边区内的辅助阴极。每个OLED器件包括沿远离所述衬底的方向依次设置的反射阳极、有机材料功能层和透明阴极。所述辅助阴极位于所述周边区内的部分与所述多个OLED器件的透明阴极电连接，且所述辅助阴极的电阻率小于所述多个OLED器件的透明阴极的电阻率。
在一些实施例中，所述辅助阴极的材料为金属材料。
在一些实施例中，所述显示区为多边形区域。所述辅助阴极位于所述周边区内的部分，包括：所述辅助阴极位于所述多边形区域中每一边的外侧的子部分；其中，每个所述子部分与所述多个OLED器件的透明阴极电连接。
在一些实施例中，所述OLED基板，还包括：与所述辅助阴极的至少一个所述子部分电连接的阴极电源。
在一些实施例中，所述辅助阴极包括多条平行的第一金属线和多条平行的第二金属线，且所述多条第一金属线和所述多条第二金属线交叉设置。每条第一金属线和每条第二金属线均包括位于所述显示区内的部分，以及由所述显示区内延伸至所述周边区内的部分。
在一些实施例中，所述显示区包括呈阵列状分布的多个子像素区域，每个子像素区域内设置有一个OLED器件。每N行的子像素区域内对应设置一条所述第一金属线；每M列的子像素区域内对应设置一条所述第二金属线；其中，N和M均为正整数。
在一些实施例中，所述辅助阴极设置于所述衬底和所述多个OLED器件之间。
在一些实施例中，所述显示区包括呈阵列状分布的多个子像素区域，每个子像素区域内设置有一个OLED器件。所述OLED基板，还包括：设置于每个子像素区域内的驱动电路，所述驱动电路与对应子像素区域内的OLED器件的反射阳极电连接。
在一些实施例中，所述辅助阴极设置于所述多个OLED器件与对应的所述驱动电路之间。所述OLED基板，还包括：依次设置于所述驱动电路的靠近所述辅助阴极的一侧的钝化层以及第一有机层。所述辅助阴极设置于所述第一有机层的背离所述钝化层的表面上。
在一些实施例中，所述OLED基板，还包括：设置于所述辅助阴极的背离所述第一有机层的一侧的第二有机层。所述多个OLED器件设置于所述第二有机层的背离所述辅助阴极的表面上。
在一些实施例中，所述的OLED基板，还包括多条栅线和多条数据线。每条栅线与至少一行的子像素区域内的多个驱动电路电连接，每条数据线与至少一列的子像素区域内的多个驱动电路电连接。每条第一金属线与所述多条栅线平行，每条第二金属线与所述多条数据线平行。
在一些实施例中，所述OLED基板，还包括：设置于所述多个OLED器件的透明阴极的背离所述衬底的一侧的封装层。
另一方面，提供一种显示面板。所述显示面板包括如上任一些实施例所述的OLED基板。
又一方面，提供一种显示装置。所述显示装置包括如上任一些实施例所述的显示面板。
附图说明
为了更清楚地说明本公开一些实施例中的技术方案，下面将对一些实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为根据本公开一些实施例中的一种OLED基板的示意图；
图2为根据本公开一些实施例中的另一种OLED基板的示意图；
图3为图2所示的OLED基板中的一种辅助阴极向透明阴极供电的等效示意图；
图4为根据本公开一些实施例中的又一种OLED基板的示意图；
图5为根据本公开一些实施例中的一种OLED基板的局部剖视示意图；
图6为根据本公开一些实施例中的另一种OLED基板的局部剖视示意图；
图7为根据本公开一些实施例中的一种显示装置的示意图。
具体实施方式
下面将结合本公开一些实施例中的附图，对本公开一些实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本公开一部分实施例，而不是全部的实施例。基于本公开中的一些实施例，本领域普通技术人员所能获得的所有其他实施例，都属于本公开保护的范围。
随着OLED显示技术的发展，用户对OLED显示面板的性能要求越来越高，例如需要OLED显示面板具有高的分辨率(也叫像素密度，Pixels Per Inch，简称PPI)。由此，OLED显示面板中的各OLED器件采用顶发射型结构，也即各OLED器件的阴极采用透明阴极，可以有效实现高的PPI。
然而，对于中大尺寸的OLED显示面板，在其每个OLED器件采用透明阴极的情况下，由于各透明阴极的电阻率较大，容易使得OLED显示面板中位于不同区域的各OLED器件的透明阴极具有不同程度的电压变化，例如电压降(IR Drop)，或电压抬升(IR Rise)，因此导致OLED显示面板的显示亮度难以均一。
本公开一些实施例提供一种OLED基板。如图1和图5所示，所述OLED基板具有一显示区AA和位于显示区AA外围的一周边区BB。所述OLED基板包括衬底10、设置于衬底10的一侧且位于显示区AA内的多个OLED器件2、以及设置于衬底10的一侧且至少位于周边区BB内的辅助阴极4。每个OLED器件2包括沿远离衬底10的方向依次设置的反射阳极21、有机材料功能层22和透明阴极23。辅助阴极4位于周边区BB内的部分与所述多个OLED器件2的透明阴极23电连接，且辅助阴极23的电阻率小于所述多个OLED器件2的透明阴极23的电阻率。
在OLED显示基板中，其显示区AA包括呈阵列状分布的多个子像素区域，每个子像素区域内设置有一个OLED器件2。图1中仅示意出OLED器件中的透明阴极21，并未对OLED器件的所有结构进行示意。此外，位于不同的子像素区域内的各OLED器件2的反射阳极21之间相互绝缘。各OLED器件2的有机材料功能层22至少包括一发光层，也即每个OLED器件2的有机材料功能层22能够对应的反射阳极21和透明阴极23的控制下发光。示例的，有机材料功能层23包括依次层叠设置的空穴传输层、发光层和电子传输层；或，有机材料功能层23包括依次层叠设置的空穴注入层、空穴传输层、发光层、电子传输层和电子注入层。
在OLED显示基板中各OLED器件2采用顶发射型结构的情况下，各OLED器件2的透明阴极共用，也即各OLED器件2的透明阴极相互连接为一层结构。此外，各OLED器件2的透明阴极从显示区AA延伸至周边区BB，方便于实现辅助阴极4位于周边区BB内的部分与所述多个OLED器件2的透明阴极23的电连接。
在一些示例中，各OLED器件2的透明阴极21的材料选自氧化铟锡(ITO)或氧化铟锌(IZO)等透明导电材料。辅助阴极4采用电阻率小于透明阴极21的电阻率的材料制作形成，例如，辅助阴极4的材料为金属材料。示例的，辅助阴极4的材料选自铝(Al)、钼(Mo)、铜(Cu)、银(Ag)、铬(Cr)、金(Pt)中的一种或其组合。
在OLED基板中，其显示区AA的形状可根据实际需求自行设定。在一些示例中，请参阅图2，显示区AA为多边形，前述辅助阴极4位于周边区BB内的部分包括：辅助阴极4位于位于显示区AA(多边形区域)中每一边的外侧的子部分。OLED基板还包括：与辅助阴极4的至少一个所述子部分电连接的阴极电源60。在OLED基板中设置至少一个阴极电源60，有利于实现阴极电源60的单侧供给，从而便于制作窄边框和低成本的OLED显示面板。
示例的，显示区AA为矩形，辅助阴极4位于周边区BB内的部分包括：图2中所示的第一子部分41、第二子部分42、第三子部分43以及第四子部分44；其中，第二子部分42与阴极电源60电连接，阴极电源60单侧供给。
辅助阴极4的电阻率小于透明阴极23的电阻率，也即辅助阴极4的阻抗较小或很小，这样在阴极单元60为单侧供给的情况下，阴极电源60提供的电压经由辅助阴极 4位于周边区BB内的各子部分分别输入至附近的多个透明阴极23，等效于显示区AA的每一边的外侧均设置有阴极电源60，并向对应的多个透明阴极23输入电压，例如图3所示。如此，与辅助阴极4位于周边区BB内的各子部分直接电连接的多个透明阴极23(其延伸至周边区BB内的部分)具有基本相同的电位，从而有利于减小OLED显示面板中位于不同区域的各OLED器件2的透明阴极23的电压变化差异，以确保OLED显示面板的显示亮度均一化。
可以理解的是，在此情况下，OLED基板中位于显示区20的中间位置的透明阴极23仍会因各透明阴极23的阻抗而具有最大的电压变化。但是，相对于不设置辅助阴极44且阴极电源60单侧供给的OLED基板，本公开一些实施例提供的OLED基板中各透明阴极23上所能发生的最大电压变化还是可以大大降低，从而位于可接受的范围内。也由此，当本公开一些实施例的OLED基板应用于非超大尺寸的显示面板，尤其是中大尺寸的显示面板时，即使若干透明阴极23上仍然存在电压变化，但其对显示面板的显示亮度的均匀性影响较小。
在一些实施例中，如图4所示，辅助阴极4包括多条平行的第一金属线401和多条平行的第二金属线402，且该多条第一金属线401和该多条第二金属线402交叉设置；其中，每条第一金属线401和每条第二金属线402均包括：位于显示区AA内的部分，以及由显示区AA内延伸至周边区BB内的部分；也即每条第一金属线401和每条第二金属线402均由显示区AA延伸至周边区BB，辅助阴极4呈网格形状设置。此外，各第一金属线401和各第二金属线402相互连接。
本公开一些实施例将辅助阴极4制作成网格形状，可以通过控制每条第一金属线401和每条第二金属线402的线宽，从而进一步降低辅助阴极4的阻抗。而且，辅助阴极4采用网格形状，其制作工艺简单，技术难度较小。
在此基础上，在一些实施例中，每N行的子像素区域内对应设置一条第一金属线401，每M列的子像素区域内对应设置一条第二金属线402；其中，N和M均为正整数。这也就是说，将显示区AA内所有行的子像素区域划分成多组，每组包括N行子像素区域，然后在每组对应的区域内设置一条第一金属线401。同理，将显示区AA内所有列的子像素区域划分成多组，每组包括M列子像素区域，然后在每组对应的区域设置一条第二金属线402。示例的，N和M相等，例如N和M均为1。
此外，每条第一金属线401和每条第二金属线402的线宽可以在允许的范围内设置的尽可能宽，以确保每条第一金属线401和每条第二金属线402均具有尽可能小的阻抗。
在一些实施例中，请参阅图5和图6，辅助阴极4设置于衬底10和前述多个OLED器件2之间。由于各OLED器件2为顶发射型的OLED器件，因此，辅助阴极40位于衬底10和各OLED器件2之间，可以确保辅助阴极4不会对OLED基板的开口率产生不利影响，从而根据需要设置每条第一金属线401和每条第二金属线402的线宽，以确保降低辅助阴极4的阻抗。
此外，在制作辅助阴极4的过程中，先于衬底10的一侧形成辅助阴极4，然后在辅助阴极4的背离衬底10的一侧形成各OLED器件2，可以确保辅助阴极4的制作工艺与OLED器件的制作工艺彼此独立，互不限制。
在一些实施例中，请参阅图5和图6，OLED基板还包括设置于衬底10上且位于每个子像素区域内的驱动电路，所述驱动电路与对应子像素区域内的OLED器件2的反射阳极21电连接。
需要补充的是，OLED基板还包括多条栅线和多条数据线(图中未示出)，其中，每条栅线与至少一行的子像素区域内的多个驱动电路电连接，每条数据线与至少一列的子像素区域内的多个驱动电路电连接。每一驱动电路配置为在对应栅线和数据线所提供信号的控制下驱动对应的OLED器件2发光。
此外，辅助阴极4中的每条第一金属线401与所述多条栅线平行设置，辅助阴极4中每条第二金属线402与所述多条数据线平行设置，有利于简化辅助阴极4的布线设计，以方便制作辅助阴极4。
在一些示例中，每一驱动电路包括一驱动晶体管70，每一驱动晶体管70包括栅极71、栅绝缘层72、有源层73、源极74和漏极75，其中，驱动晶体管70的漏极75与对应的OLED器件2的反射阳极21电连接。示例的，如图5所示，每一驱动晶体管70包括：依次图形化设置于衬底10上的有源层73、栅绝缘层72、栅极71、层间绝缘层91、源极74和漏极75，其中，源极74和漏极75同层设置，且源极74和漏极75穿过设置在层间绝缘层91上的对应过孔分别与有源层73电连接。在此基础上，若有源层73的材料为氧化物半导体，该有源层73和衬底10之间还需设置遮光层80，以避免外界的光信号对有源层73的性能造成影响。
需要说明的是，图5中以顶栅结构的驱动晶体管70为例进行示意，但本公开一些实施例并不限于此，每一驱动晶体管70的结构类型根据实际需求选择设置即可。此外，每一驱动电路并不仅限于包括一驱动晶体管70，例如每一驱动电路还包括与驱动晶体管70连接的至少一个薄膜晶体管或至少一个存储电容等。本公开一些实施例对驱动电路的结构不做限定，以驱动电路具备驱动对应OLED器件发光的功能为限。
在一些示例中，所述多条栅线与驱动晶体管70的栅极71同层设置，所述多条数据线与驱动晶体管70的源极74以及漏极75同层设置。此处，同层设置是指二者采用相同的制作材料并在一次构图工艺中制作形成。所述构图工艺包括光刻工艺，或包括光刻工艺以及刻蚀步骤在内的工艺。所述光刻工艺是指包括成膜(例如化学气相淀积成膜，Chemical Vapor Deposition，简称CVD)、曝光、显影等工艺过程且利用光刻胶、掩模板、曝光机等形成图形的工艺。
在一些实施例中，如图5所示，辅助阴极4设置于多个OLED器件2和对应的驱动电路(例如驱动晶体管70)之间。所述OLED基板还包括：依次设置于所述驱动电路的靠近辅助阴极4的一侧的钝化层92以及第一有机层93。辅助阴极4设置于第一有机层93的背离钝化层92的表面上。辅助阴极4设置于多个OLED器件2和对应的驱动电路(例如驱动晶体管70)之间，对应OLED基板的制作过程为：先形成各驱动电路，再形成辅助阴极4，之后依次形成对应OLED器件2的反射阳极21、有机材料功能层22和透明阴极23。
本公开一些实施例在辅助阴极4与各驱动电路之间设置钝化层92和第一有机层93，可以增大辅助阴极4与各驱动电路之间的间距，从而降低辅助阴极4与其下方(靠近衬底10一侧)的电极或导线之间的耦合电容。此外，在各驱动电路的靠近辅助阴极 4的一侧设置钝化层92，可以利用钝化层92对驱动电路中的电路元件例如驱动晶体管70进行保护，以阻止水氧进入。
在一些实施例中，请继续参阅图5，OLED基板还包括：设置于辅助阴极4的背离第一有机层93的一侧的第二有机层94。所述多个OLED器件设置于所述第二有机层的背离所述辅助阴极的表面上。第二有机层94可起到平坦化的作用，以确保各OLED器件2制作在平坦的表面上。
此外，请继续参阅图5，OLED基板的各子像素区域一般由像素界定层95进行界定，也即OLED基板中每个OLED器件2的有机材料功能层22一般形成在像素界定层95中对应的一个开口区域内。
由于辅助阴极4与各OLED器件2的透明阴极23之间至少设置有第二有机层94和像素界定层95，因此，请参阅图1和图2，辅助阴极4位于周边区BB内的部分与所述多个OLED器件2的透明阴极23电连接，表现为：辅助阴极4位于周边区BB内的部分穿过设置于第二有机层94和像素界定层95二者中的多个过孔50，与所述多个OLED器件2的透明阴极23延伸至周边区BB内的部分电连接。在一些示例中，如图1所示，辅助阴极4对应穿过的多个过孔50在周边区BB内均匀分布。
在一些实施例中，如图6所示，所述OLED基板还包括设置于所述多个OLED器件2的透明阴极23的背离衬底10的一侧的封装层100。示例的，封装层100采用与钝化层92相同的材料制作形成，例如通过化学气相沉积(Chemical Vapor Deposition，简称CVD)工艺形成。本公开一些实施例在各OLED器件2的透明阴极23的背离衬底10的一侧设置封装层100，能够利用封装层100对各OLED器件2进行封装保护，以有效提高各OLED器件2的使用寿命。
本公开一些实施例提供了一种显示面板。该显示面板包括上述一些实施例所述的OLED基板。该显示面板可以应用至显示器、电视、数码相框、手机或平板电脑等具有显示功能的产品或者部件中。所述显示面板具有与所述OLED基板相同的有益效果，在此不再赘述。
本公开一些实施例还提供了一种显示装置。请参阅图7，该显示装置1000包括上述实施例所述的显示面板1001。该显示装置具有与上述显示面板相同的有益效果，此处不再赘述。可选的，所述显示装置包括：电子纸、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等具有显示功能的产品或部件。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (14)

  1. 一种OLED基板，所述OLED基板具有一显示区和位于所述显示区外围的一周边区，所述OLED基板包括：
    衬底；
    设置于所述衬底的一侧且位于所述显示区内的多个OLED器件；每个OLED器件包括沿远离所述衬底的方向依次设置的反射阳极、有机材料功能层和透明阴极；
    以及，设置于所述衬底的一侧且至少位于所述周边区内的辅助阴极；所述辅助阴极位于所述周边区内的部分与所述多个OLED器件的透明阴极电连接，且所述辅助阴极的电阻率小于所述多个OLED器件的透明阴极的电阻率。
  2. 根据权利要求1所述的OLED基板，其中，所述辅助阴极的材料为金属材料。
  3. 根据权利要求1所述的OLED基板，其中，所述显示区为多边形区域；
    所述辅助阴极位于所述周边区内的部分，包括：所述辅助阴极位于所述多边形区域中每一边的外侧的子部分；其中，每个所述子部分与所述多个OLED器件的透明阴极电连接。
  4. 根据权利要求3所述的OLED基板，还包括：
    与所述辅助阴极的至少一个所述子部分电连接的阴极电源。
  5. 根据权利要求1所述的OLED基板，其中，所述辅助阴极包括多条平行的第一金属线和多条平行的第二金属线，且所述多条第一金属线和所述多条第二金属线交叉设置；
    其中，每条第一金属线和每条第二金属线均包括位于所述显示区内的部分，以及由所述显示区内延伸至所述周边区内的部分。
  6. 根据权利要求5所述的OLED基板，其中，所述显示区包括呈阵列状分布的多个子像素区域，每个子像素区域内设置有一个OLED器件；
    每N行的子像素区域内对应设置一条所述第一金属线；每M列的子像素区域内对应设置一条所述第二金属线；其中，N和M均为正整数。
  7. 根据权利要求5所述的OLED基板，其中，所述辅助阴极设置于所述衬底和所述多个OLED器件之间。
  8. 根据权利要求1-5任一项所述的OLED基板，其中，所述显示区包括呈阵列状分布的多个子像素区域，每个子像素区域内设置有一个OLED器件；
    所述OLED基板，还包括：
    设置于每个子像素区域内的驱动电路，所述驱动电路与对应子像素区域内的OLED器件的反射阳极电连接。
  9. 根据权利要求8所述的OLED基板，其中，所述辅助阴极设置于所述多个OLED器件与对应的所述驱动电路之间；
    所述OLED基板，还包括：依次设置于所述驱动电路的靠近所述辅助阴极的一侧的钝化层以及第一有机层；
    所述辅助阴极设置于所述第一有机层的背离所述钝化层的表面上。
  10. 根据权利要求9所述的OLED基板，还包括：设置于所述辅助阴极的背离所述第一有机层的一侧的第二有机层；
    所述多个OLED器件设置于所述第二有机层的背离所述辅助阴极的表面上。
  11. 根据权利要求8所述的OLED基板，还包括：
    多条栅线，每条栅线与至少一行的子像素区域内的多个驱动电路电连接；
    以及，多条数据线，每条数据线与至少一列的子像素区域内的多个驱动电路电连 接；
    其中，每条第一金属线与所述多条栅线平行；每条第二金属线与所述多条数据线平行。
  12. 根据权利要求1所述的OLED基板，还包括：设置于所述多个OLED器件的透明阴极的背离所述衬底的一侧的封装层。
  13. 一种显示面板，包括如权利要求1-12任一项所述的OLED基板。
  14. 一种显示装置，包括如权利要求13所述的显示面板。
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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115188791A (zh) 2018-06-07 2022-10-14 京东方科技集团股份有限公司 一种oled基板及显示面板
CN110061147B (zh) * 2019-04-24 2022-03-25 昆山国显光电有限公司 显示面板及其制作方法、显示装置
CN110459578B (zh) * 2019-08-21 2022-06-10 合肥鑫晟光电科技有限公司 显示基板及其制备方法和修复方法、显示装置
CN110634918B (zh) * 2019-08-27 2021-09-24 深圳市华星光电半导体显示技术有限公司 Oled显示面板和oled显示面板的制备方法
CN110739338B (zh) * 2019-10-24 2022-11-29 京东方科技集团股份有限公司 一种显示基板及其制备方法、显示面板
CN111969012A (zh) * 2020-08-18 2020-11-20 合肥维信诺科技有限公司 显示面板及其制备方法
CN113036057A (zh) * 2021-03-04 2021-06-25 合肥鑫晟光电科技有限公司 阵列基板及其制备方法、显示面板、显示装置
WO2022246739A1 (zh) * 2021-05-27 2022-12-01 京东方科技集团股份有限公司 显示基板、显示装置
CN114023790B (zh) * 2021-10-18 2023-05-30 深圳市华星光电半导体显示技术有限公司 显示面板及显示终端
CN115413370B (zh) * 2022-07-25 2023-09-22 京东方科技集团股份有限公司 显示基板及显示装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101847649A (zh) * 2009-03-24 2010-09-29 乐金显示有限公司 有机发光显示装置及其制造方法
CN104716156A (zh) * 2013-12-13 2015-06-17 昆山国显光电有限公司 一种有机发光显示装置及其制备方法
CN105974689A (zh) * 2016-07-22 2016-09-28 京东方科技集团股份有限公司 一种阵列基板及其制备方法、液晶显示面板
CN107369698A (zh) * 2016-05-12 2017-11-21 乐金显示有限公司 连接结构的制造方法及使用该连接结构的有机发光二极管显示装置
CN108511506A (zh) * 2018-06-07 2018-09-07 京东方科技集团股份有限公司 一种oled基板及显示面板

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG143063A1 (en) * 2002-01-24 2008-06-27 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US7985609B2 (en) * 2006-11-17 2011-07-26 Canon Kabushiki Kaisha Light-emitting apparatus and production method thereof
US7915816B2 (en) * 2007-05-14 2011-03-29 Sony Corporation Organic electroluminescence display device comprising auxiliary wiring
JP2013030293A (ja) * 2011-07-27 2013-02-07 Sony Corp 表示装置および表示装置用基板
WO2013069041A1 (ja) * 2011-11-07 2013-05-16 パナソニック株式会社 有機ｅｌ表示パネル及び有機ｅｌ表示装置
KR101548304B1 (ko) * 2013-04-23 2015-08-28 엘지디스플레이 주식회사 유기 전계 발광 표시장치 및 그 제조방법
KR101661015B1 (ko) * 2013-11-28 2016-09-28 엘지디스플레이 주식회사 대면적 유기발광 다이오드 표시장치
KR102297075B1 (ko) * 2014-11-14 2021-09-02 엘지디스플레이 주식회사 협 베젤 구조를 갖는 대면적 유기발광 다이오드 표시장치
KR20180035979A (ko) * 2016-09-29 2018-04-09 엘지디스플레이 주식회사 유기발광 표시장치
KR20180060851A (ko) * 2016-11-29 2018-06-07 엘지디스플레이 주식회사 유기 발광 표시 장치

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101847649A (zh) * 2009-03-24 2010-09-29 乐金显示有限公司 有机发光显示装置及其制造方法
CN104716156A (zh) * 2013-12-13 2015-06-17 昆山国显光电有限公司 一种有机发光显示装置及其制备方法
CN107369698A (zh) * 2016-05-12 2017-11-21 乐金显示有限公司 连接结构的制造方法及使用该连接结构的有机发光二极管显示装置
CN105974689A (zh) * 2016-07-22 2016-09-28 京东方科技集团股份有限公司 一种阵列基板及其制备方法、液晶显示面板
CN108511506A (zh) * 2018-06-07 2018-09-07 京东方科技集团股份有限公司 一种oled基板及显示面板

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