WO2019231164A1 - 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크 - Google Patents
식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크 Download PDFInfo
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- WO2019231164A1 WO2019231164A1 PCT/KR2019/006141 KR2019006141W WO2019231164A1 WO 2019231164 A1 WO2019231164 A1 WO 2019231164A1 KR 2019006141 W KR2019006141 W KR 2019006141W WO 2019231164 A1 WO2019231164 A1 WO 2019231164A1
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- silicon carbide
- vapor deposition
- chemical vapor
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 262
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 123
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 70
- 238000005530 etching Methods 0.000 title claims abstract description 70
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 129
- 238000000034 method Methods 0.000 claims abstract description 93
- 239000005055 methyl trichlorosilane Substances 0.000 claims abstract description 63
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 claims abstract description 63
- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 55
- 230000008569 process Effects 0.000 claims abstract description 51
- 239000007789 gas Substances 0.000 claims abstract description 44
- 239000001257 hydrogen Substances 0.000 claims abstract description 27
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 27
- 125000004429 atom Chemical group 0.000 claims abstract description 14
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims abstract 6
- 238000000151 deposition Methods 0.000 claims description 39
- 238000002441 X-ray diffraction Methods 0.000 claims description 21
- 238000005452 bending Methods 0.000 claims description 19
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- 239000000126 substance Substances 0.000 claims description 15
- 239000013078 crystal Substances 0.000 claims description 13
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 14
- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 14
- 150000002431 hydrogen Chemical class 0.000 description 14
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- 238000010586 diagram Methods 0.000 description 13
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- 239000004215 Carbon black (E152) Substances 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Chemical group 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical group Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
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- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/90—Carbides
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- C01B32/963—Preparation from compounds containing silicon
- C01B32/977—Preparation from organic compounds containing silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
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- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
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- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
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- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
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- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
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- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Definitions
- the present invention relates to a chemical vapor deposition (CVD) silicon carbide bulk, the uniform nitrogen concentration in the bulk, uniform resistance value, and 6H-SiC is included in the silicon carbide bulk with improved etching characteristics It is about.
- CVD chemical vapor deposition
- silicon carbide is used in semiconductor and LED processes, and silicon carbide components are used in wafer carriers called susceptors, boats for deposition processes, tubes, and etching processes. It is used as a ring, shower plate, and the like.
- a method of obtaining a nitrogen-doped CVD-SiC molded body by controlling the amount of nitrogen gas introduced together with the source gas, wherein the silicon single crystal substrate is heated to 900 to 1200 ° C, and monosilane (SiH4) gas, propane gas, and carrier as the source gas.
- the temperature of the substrate was then raised to 1300-1400 ° C., and nitrogen gas (1 ⁇ ) was used as the dopant simultaneously with the source gas (0.05-0.3 cc / min).
- the etching characteristics are further improved, and the focus ring needs to have improved resistance or uniformity of nitrogen concentration in the focus ring.
- the Republic of Korea Patent Publication No. 10-2007-0038346 has a generally annular shape so as to be disposed on the outer portion of the wafer, a plurality of protrusions of a predetermined form arranged in a group to include a portion having an enlarged surface area compared to other parts Wherein the portion having an enlarged surface area is provided with a focus ring of a semiconductor manufacturing apparatus, wherein the plurality of protrusions are arranged regularly or irregularly.
- Korean Patent Laid-Open Publication No. 10-2001-0051465 discloses "In a silicon focus ring made of a silicon single crystal used as a focus ring in a plasma apparatus, the interstitial oxygen concentration contained in the silicon focus ring is 5 x 10 17 atoms /. provides cm3 more than 1.5 ⁇ 10 18 atoms / cm3 or less and a nitrogen concentration of 5 ⁇ 10 13 gae / cm3 more than 5 ⁇ 10 15 gae / cm3 or less silicon focus ring, characterized in that ".
- the above-mentioned prior art does not suggest a method of further improving the etching characteristics in the focus ring, and does not suggest the structure and the characteristics in the particles in the focus ring in which the etching characteristics are improved.
- the nitrogen concentration and resistance values are uniform so as to optimize the technology of supplying and mixing nitrogen gas in SiC manufacturing, to improve the etching characteristics, and to use in ultra-fine processes. It also aims to provide silicon carbide bulk that can be manufactured at low cost.
- the silicon carbide (SIC) is MTS (methyltrichlorosilane), hydrogen (H2) and nitrogen (N2) gas is used .
- the SIC produced by the chemical field deposition method is ⁇ -SiC (3C-SiC)
- 6H-SiC is also present in the SIC prepared by the chemical field deposition method
- the silicon carbide XRD analysis of the bulk reveals peaks with reference code 03-065-0360, with peaks with reference code 00-049-1428, and depth from the bulk surface, the metastable layer (Depth
- the nitrogen concentration at 1,500 nm or more is 4.0x1018 atoms / cm3 or more.
- a comb-tooth pattern is formed in the particles of the carbide bulk, and the area ratio of the comb-tooth pattern in the bulk particles is 50% or more.
- the silicon carbide (SIC) is MTS (methyltrichlorosilane, Methyltrichlorosilane), hydrogen (H2) and nitrogen (N2) gas is used
- the chemical SIC prepared by vapor deposition and chemical vapor deposition was ⁇ -SiC (3C-SiC)
- 6H-SiC was also present in the SIC prepared by chemical vapor deposition
- XRD analysis of silicon carbide bulk 5 peaks with a reference code of 03-065-0360, and there are also peaks with a reference code of 00-049-1428, and the depth from the bulk surface of the metastable layer is greater than 1,500 nm.
- the nitrogen concentration at is at least 4.0 ⁇ 10 19 atoms / cm 3.
- the trace element is 5 ppm or less, and the bending strength is 350 to 650 MPa.
- silicon carbide (SIC) is used as MTS (methyltrichlorosilane), hydrogen (H2) and nitrogen (N2) gas
- MTS methyltrichlorosilane
- H2 hydrogen
- N2 nitrogen
- the SIC prepared by the deposition method and the chemical field deposition method was ⁇ -SiC (3C-SiC), and 6H-SiC was also present in the SIC prepared by the chemical field deposition method, and peaks were obtained by XRD analysis of silicon carbide bulk. In this case, there are five peaks with a reference code of 03-065-0360, and there are peaks with a reference code of 00-049-1428, and silicon carbide has a resistance value of 0.3 ⁇ or less or 0.003 ⁇ or less.
- particles are present in the carbide bulk, a comb pattern is formed in the particles, and the size of the particles is on average about 40 to 100 ⁇ m.
- silicon carbide (SIC) is used as MTS (methyltrichlorosilane), hydrogen (H2) and nitrogen (N2) gas
- MTS methyltrichlorosilane
- H2 hydrogen
- N2 nitrogen
- the SIC prepared by the deposition method and the chemical field deposition method was ⁇ -SiC (3C-SiC), and 6H-SiC was also present in the SIC manufactured by the chemical field deposition method, and the silicon carbide bulk was XRD.
- the peak is identified by analysis, there are five peaks having a reference code of 03-065-0360, and there are also peaks having a reference code of 00-049-1428, and the silicon carbide resistance value is 1 ⁇ or less.
- the size of the particles averages about 40 to 100 ⁇ m.
- silicon carbide is prepared by chemical vapor deposition using MTS (Methyltrichlorosilane), hydrogen (H2) and nitrogen (N2) gas, and the SIC produced by the chemical vapor deposition method is ⁇ -SiC (3C).
- MTS Metaltrichlorosilane
- H2 hydrogen
- N2 nitrogen
- the silicon carbide (SIC) produced by the chemical vapor deposition method is made of 6H-SiC through a phase transition process
- the layer of the SIC produced by the chemical vapor deposition method is two or more than two layers
- the SIC is made of a specimen with a thickness of 5 mm or more and 15 mm or less, when the white LED light is irradiated, the yellow wavelength is transmitted, the bending strength of the first layer and the second layer is different, in the first layer and the second layer
- the height of the 6H-SiC peak is different, the concentration of impurities in the first layer and the second layer is uniform, and the visible light wavelength value of the first layer is different from the visible light wavelength value of the two layers.
- the etching characteristics are improved, the yield is improved in the semiconductor process, and the retention period is increased, thereby not only providing SiC, which reduces the cost, but also greatly improves the uniformity of the resistance value and the nitrogen concentration. This makes it possible to provide SiC.
- 1 is a view of an embodiment showing a process of mixing the gas used in the MTS transfer and the present invention.
- FIG. 2 is a diagram of an embodiment showing a Gas Mixer System Line.
- 4 and 5 are diagrams of embodiments showing nitrogen concentrations in low resistance SiC.
- Figure 6 shows the SiC nitrogen concentration with a general resistance.
- 10 and 11 is a view showing the crystallinity according to the CVD-SiC light transmittance of the product of the present invention.
- FIG. 14 is a view showing an XRD peak and a method for confirming the ratio of 3C-SiC and 6H-SiC.
- 15 to 17 is a view showing the change in etching amount after the etching test.
- FIG. 18 shows peaks (XRD analysis results) of SIC bulk prepared by chemical vapor deposition.
- 19 to 21 show the results of XRD analysis after the heat treatment of the 3C-SiC.
- 22 is a diagram of an embodiment showing a focus ring.
- Figures 23 and 24 show examples of the cross section of the focus ring (cutting surface assuming cut along line A-A in Figure 22).
- silicon carbide precursor gases such as methyltrichlorosilane (MTS), a mixture of hydrogen and argon
- MTS methyltrichlorosilane
- argon a mixture of hydrogen and argon
- silicon carbide is deposited as a film or shell on a solid mandrel installed in the deposition chamber.
- the coated mandrel is removed from the deposition chamber and the deposit is separated from the mandrel.
- Monolithic silicon carbide plates and cylinders have been produced by applying this chemical vapor deposition (CVD) technique using suitable shaped substrates or mandrel shapes.
- the present invention proposes a method for producing silicon carbide by chemical vapor deposition (CVD) method, in particular to provide a method for producing silicon carbide with improved etching characteristics.
- CVD chemical vapor deposition
- Chemical vapor deposition (CVD) systems are used to produce silicon carbide products. And methyltrichlorosilane (MTS) is provided and argon is used as a carrier gas for the MTS. And argon with suspended MTS is fed under sealed conditions and then mixed with hydrogen and nitrogen (N 2 ).
- MTS methyltrichlorosilane
- N 2 nitrogen
- the mixed precursor gases are then supplied to the deposition furnace through an injector. Then, dissociation of the MTS and silicon carbide deposits occurs, and exhaust gases generated in the dissociation reaction are discharged.
- the silicon carbide precursor is selected from materials that can react to form silicon carbide.
- materials generally include components that can react to form silicon moieties such as silane or chlorosilanes and components that can react to form carbon moieties such as hydrocarbons.
- Hydrocarbon substituted silanes are preferred silicon carbide precursors because the silanes contain silicon and carbon moieties in a single compound.
- inert, non-reactive gases such as argon, helium or other inert gases can be used as carriers for normal liquid (eg, liquid in conventional STP) precursors.
- Methyltrichlorosilane (MTS) is a preferred precursor, especially when used with hydrogen (H2) to remove chlorine released when MTS dissociates.
- H2 hydrogen
- argon is generally used as an inert, non-reactive carrier gas. At this time, argon acts as a diluent.
- the focus ring of the semiconductor manufacturing apparatus can improve the etching uniformity of the wafer.
- an apparatus using plasma is widely used to form a thin film on a silicon wafer or to perform etching.
- a silicon wafer to be processed is disposed on a lower electrode, a reaction gas is introduced from an upper electrode, a high frequency voltage is applied to both electrodes, and a high frequency plasma is generated between both electrodes to etch the silicon wafer. do.
- the silicon wafer is disposed in the inner region of the focus ring.
- the focus ring is generally made of the same material as the silicon wafer, that is, silicon.
- the focus ring of the present invention manufactures silicon carbide produced by chemical vapor deposition under processing. That is, a focus ring manufacturing method of a general dry etching apparatus may include preparing a graphite disc having a diameter larger than that of a semiconductor wafer, forming SiC layer by depositing SiC on the entire surface of the graphite disc, and forming the graphite disc.
- the SiC layer is circularly cut up and down so as to expose the edge of the (S13), and the structure of the SiC layer is laminated on the upper and lower surfaces of the graphite disk that the side of the result of the step of vertical cutting Cutting the central portion of the graphite disk in the transverse direction to obtain two structures in which a SiC layer is laminated on one surface of the graphite disk on the disk, and removing the graphite disk from the resultant of the step Obtaining two disc-shaped SiC layers, and each of the two disc-shaped SiC layers in a circular phase. And cutting to simultaneously manufacture the dummy wafer and the focus ring.
- FIG. 1 is a view of an embodiment showing a process chart for mixing the gas used in the MTS transfer and the present invention.
- the buffer tank is a tank having a function of supplying a certain amount, and a device for supplying a certain amount is added.
- the supply tank is a tank having a transfer function of supplying the MTS directly to the vaporizer.
- MTS is supplied to the vaporizer from the service tank, MTS is vaporized in the evaporator, and the vaporized MTS is supplied to the gas mixer system line together with nitrogen and hydrogen gas. At this time, hydrogen is still supplied to the evaporator.
- a one-stage mixing system for supplying MTS located in a thermostat through a line and directly supplying argon, nitrogen and hydrogen to the MTS supply line is used.
- a buffer tank and a service tank were placed in the middle from the MTS supply unit to the evaporator, and then passed through a vaporizer.
- FIG. 2 is a diagram of an embodiment showing a gas mixer system line injected into a deposition furnace.
- the gas mixing system of the present invention consists of a header 10 and a spray line 20.
- the header 10 is an outer tube surrounding the spray line 20 and the diameter of the header 10 used in the present invention is 80 mm, and the diameter of the spray line 20 existing inside the header used in the present invention. Is 10 mm.
- the header is made of a Citatari fastening (30) using a Citatari component, to withstand pressure and high sealing effect.
- MTS, nitrogen, and hydrogen supplied from a vaporizer are supplied through a supply pipe 31, and the diameter of the supply pipe 31 used in the present invention is 25 mm. Is connected to the front of the header 10,
- At least two nozzles 32 are connected to the header 10. Of course, in the present invention, as shown in the drawings, four nozzles 32 were used in one embodiment. At each nozzle 32, MTS, nitrogen and hydrogen are injected into the deposition furnace 40. The diameter of the nozzle 32 used in the present invention is 25mm,
- nitrogen is supplied to the inlet side of the injection line 20 existing inside the header 10, and a plurality of holes of 1 mm are provided in the injection line.
- the value of the diameter of the header, line, and nozzle indicated in the above embodiment is one embodiment, and the features of the present invention are not necessarily limited to the value of the diameter.
- the reactor means a deposition furnace 40 in which a CVD process is performed. That is, SiC is deposited by the mixed gas injected from the injection line 20,
- the deposition is performed in the deposition furnace 40, and the exhaust gases generated in the dissociation reaction after the deposition are discharged through an exhaust port (a portion connected to the dust collector 50 at the lower end of the deposition furnace 40 in the drawing).
- the deposition furnace 40 is a housing made of water-cooled stainless steel, which is provided with a graphite mandrel, a graphite heating member and a graphite insulating tube. And the mixed precursor gases introduced into the deposition furnace 40 are directed to pass over the inner surface of the heated graphite mandrel, causing dissociation of the MTS and silicon carbide deposits on the inner surface of the mandrel.
- Exhaust gases discharged from the exhaust port of the deposition furnace 40 although not shown separately in the figure, the solids suspended through the filter is removed, and then passed through a vacuum pump to control the reduced pressure in the deposition furnace Rough too.
- the exhaust gases then pass through a scrubber 50 that recovers the necessary gases and then discharged into the atmosphere.
- the present invention relates to a chemical vapor deposition (CVD) silicon carbide bulk and a method for manufacturing the same, and a low-resistance SiC can be manufactured even if a small amount of N 2 is added through a gas mixing system improvement.
- CVD chemical vapor deposition
- Tables 1 and 2 show the respective component contents in the gas supplied to the deposition furnace 40. Firstly, Table 1 is the component content in our method, and Table 2 is the component content in the prior art (based on 100% sum of MTS and hydrogen).
- the present invention contains nitrogen content of 0.00062 to 0.65% or 0.65% or more of the feed gas (the standard is 100% of the sum of MTS and hydrogen). EO).
- 'SLPM' means 'Standard Litre Per Minute'.
- the ratio of nitrogen gas can be greatly reduced.
- FIGS. 4 and 5 are diagrams of embodiments showing nitrogen concentrations in silicon carbide bulk, made with the manufacturing process of the present invention via a method of chemical vapor deposition (CVD).
- CVD chemical vapor deposition
- Nitrogen concentration at a depth of 1,500 nm or more (metastable layer) in the silicon carbide bulk surface was measured.
- the specimens were analyzed using a scanning ion mass spectroscopy.
- specimens may be analyzed using gas discharge mass spectroscopy (GDMS) for trace element impurities.
- GDMS gas discharge mass spectroscopy
- FIG. 4 is a graph showing the measurement of the nitrogen concentration in low-resistance SiC of 0.3 ⁇ or less, and in FIG. 4, the nitrogen concentration of 4.0x1018 atoms / cm 3 or more at a depth of 1,500 nm or more (a metastable layer). It can be seen that the nitrogen concentration value is smaller than 1.0x1019 atoms / cm 3, which is the nitrogen concentration value suggested in the prior art.
- FIG. 5 is a graph showing the measurement of the nitrogen concentration in the silicon carbide bulk having a value of 0.003 ⁇ or less, which is a new low resistance recently used, and a depth of 1,500 nm or more in the silicon carbide bulk surface. It is a value which shows the nitrogen concentration in a metastable layer, and it turns out that it has a nitrogen concentration of 4.0x1019 atoms / cm ⁇ 3> or more.
- FIG. 6 is a diagram of an embodiment showing the nitrogen concentration in silicon carbide bulk with a general resistance produced by Chemical Vapor Deposition (CVD) method.
- CVD Chemical Vapor Deposition
- Figure 6 is a view showing the SiC nitrogen concentration in the general resistance having a resistance value of 1 ⁇ .cm or more, the concentration measuring method is the same as the method described in Figures 4 and 5.
- the nitrogen concentration of 1.4x1018 atoms / cm 3 or less was found in the silicon carbide bulk surface near the depth of 1,500 nm or more (the metastable layer).
- Table 3 shows the characteristics of CVD-SiC structures.
- ⁇ -SiC which is a low temperature stable phase, contains 3C-SiC, and 2H-SiC, 4H-SiC, 6H-SiC, etc., which are used for ⁇ -SiC, which is a high temperature stable phase.
- 3C-SiC which is ⁇ -SiC, is silicon carbide produced at a temperature of 1500 ° C or lower.
- 2H-SiC, 4H-SiC, and 6H-SiC which are ⁇ -SiC are silicon carbides produced at a high temperature of 1500 ° C. or higher,
- ⁇ -SiC has lower etching rate (higher etching resistance) than ⁇ -SiC, so that in the etching process (etching process), the yield is improved, the maintenance period is increased, the cost is reduced, and the productivity is increased. Will have an effect.
- 6H-SiC etch rate was 3C. It was reported to show similar etching characteristics even after etching about 10% later than -SiC, because 6H-Si Face has higher density than 3C-Si Face. For reference, 6H-Si Face is 1.22 ⁇ 1015 atom / cm 2 and 3C-Si Face is 1.06 ⁇ 1015 atom / cm 2.
- the heat treatment for the silicon carbide obtained through the embodiment of FIG. is a two-step process, the first heat treatment process is a process for surface high purity (named “D-Clean” in the present invention), and the second heat treatment process for improving the etching characteristics ("H- "Clean”).
- the silicon carbide obtained through the embodiment of FIGS. 1 to 3 of the present invention is 3C-SiC, which is ⁇ -SiC, and 3C-SiC, which is ⁇ -SiC, is made of 6H-SiC, which is ⁇ -SiC, through a phase transition process. .
- D-Clean is a one-step heat treatment process for the silicon carbide obtained through the embodiment of FIG.
- Process conditions are the said silicon carbide put into a heat processing oven, and hold at a temperature of 500-1500 degreeC for 30 minutes-6 hours.
- the temperature and time can be adjusted according to the required process conditions.
- the optimum heat treatment condition is maintained at 1100 to 1300 ° C. for 2 to 5 hours.
- the heat treatment oven is maintained at atmospheric conditions and atmospheric pressure conditions, and supplies water vapor (H 2 O).
- High purity of the surface is achieved by oxidizing the metallic adsorbate or ionized contaminants on the surface of the silicon carbide and removing the final oxide by feeding the water groups.
- H-Clean is an ⁇ -SiC phase transition process for silicon carbide obtained through the example of FIG. 3 to improve etching characteristics.
- the vacuum state is maintained using a high temperature vacuum furnace oven or a microwave vacuum oven, the process temperature is 1,500 to 3,000 ° C, and the holding time is 30 minutes to 6 hours.
- the time can be adjusted according to the required process conditions.
- the temperature and time can be adjusted according to the required process conditions.
- optimal heat treatment conditions are maintained at 2,000 to 2,500 ° C. for 3 to 4 hours.
- Table 4 is a Peak List, the value of which is a numerical value representing the graph values of FIG. 7 as a table.
- Table 5 is a reference code as the Identified Patterns List of FIGS. 7 and 4. In other words. In Table 5, the number “03-065-0360” is the reference code.
- FIG. 8 is a graphical representation of peak values for XRD analysis results after two steps of heat treatment (H-Clean) using the process of the present invention.
- Table 6 is a Peak List, the value of which is a value showing the graph values of FIG.
- Table 7 is an Identified Patterns List and reference codes of FIGS. 8 and 6.
- the ratio of 6H-SiC was confirmed through the XRD analysis results shown in FIG. 8. That is, the component ratio can be confirmed by the difference between the heights of the 3C-SiC and 6H-SiC peaks.
- the present invention is also a commercialization technology for improving the life by applying the 3C-SiC grown by the CVD method to the etching ring for etching process.
- 9 is a tissue structure magnified 1200 times with an optical microscope.
- the SiC of the present invention has a significant increase in the comb pattern (Twin) in the mouth than the conventional SiC.
- FIG 10 and 11 are views showing the crystallinity according to the CVD-SiC light transmittance of the product of the present invention.
- the SIC of the present invention has a thickness of 5 mm or more and 15 mm or less and a yellow wavelength is transmitted when white LED light is irradiated.
- the yellow wavelength is transmitted from the white LED light to appear yellow.
- FIGS. 12 and 13 are diagrams showing the bending strength of SiC including the conventional SiC and 6H-SiC of the present invention.
- 6H-SiC of the present invention showed a result that the flexural strength increases and the deviation decreases.
- the bending strength of the conventional SiC is 350 to 500 MPa
- the bending strength of the product including 6H-SiC of the present invention is 350 to 650 MPa.
- FIG. 14 is a figure which shows the method of measuring bending strength. That is, Fig. 14 (A) shows the prepared specimen, 14 (B) shows the specimen in which the crack occurred after the flexural strength test, and 14 (C) is a diagram showing the principle of the flexural strength test. Figure 14 (C) shows how many millimeters of bending occur after the warp.
- Sample size width 10mm, thickness 4mm,
- the average displacement of conventional SiC is 0.087 mm
- the average displacement of SiC containing 6H-SiC of the present invention is 0.096 mm.
- Deposition is at least Ts / Tm 0.5.
- the grain size of the growing surface was found to be about 40-100 ⁇ m on average, and no voids trap (self shadowing) was found between grain boundaries in the ZONE II growth form.
- the middle of film formation is Ts / Tm 0.5 or more.
- the deposition columnar grain size was found to be about 70-120 ⁇ on average, and in some cases, well-developed equiaxed crystal tissues were confirmed to have an excellent tissue state because the size was 150 ⁇ or more.
- FIG. 14 is a diagram showing an XRD peak and shows a method of confirming the ratio of 3C-SiC and 6H-SiC.
- the second graph from the top of Figure 14 can be seen that the height of the peak of the 6H-SiC peak is 30% of the height of the peak of the 3C-SiC. Therefore, in this case, the value occupied by 6H-SiC in the total SiC is 23%.
- the bottom graph of FIG. 14 shows that the height of the peak of 6H-SiC is 50% of the height of the peak of 3C-SiC. Therefore, in this case, the value occupied by 6H-SiC in the total SiC is 33%.
- FIG. 15 is a view illustrating etching and etching rates in a plasma chamber.
- Figure 16 is a view showing the change in roughness after the etching test. That is, Figure 16 shows the roughness change after the etching test of the conventional SiC and 6H-SiC of the present invention.
- 6H-SiC of the present invention has a surface roughness Ra value of 2.0 or less, it can be confirmed that the etching amount is reduced than the conventional SiC.
- Figure 17 is a photograph showing the tissue shape observed with a 1200x optical microscope.
- Figure 17 (A) is a photograph of a conventional product after etching
- Figure 17 (B) is a photograph of the present invention product after etching.
- the SiC bulk can be made into a multi-layer structure.
- the present invention provides a method for supplying nitrogen when preparing SiC. (For a description of the method for supplying nitrogen, see the description of the embodiment of FIG. 1 to FIG. 6 of the present invention.)
- the ratio of 6H-SiC in SiC can be controlled.
- the white light is transmitted through the SiC specimen as in the examples of FIGS. 10 and 11 of the present invention, the transmitted light may also be observed.
- SiC bulk In general, it takes about 7 days to produce SiC bulk, and the resulting SiC thickness is about 3 mm. (Of course, it may vary depending on the thickness of the SiC bulk to be produced. It is not necessarily limited to the number of 3 mm.)
- the amount of nitrogen supplied may be changed, whereby the resistance value varies depending on each SiC bulk layer.
- the phase transfer process can be changed after one coating process or after three to four coating processes, so that the ratio of 6H-SiC to the total SiC varies depending on the layer.
- the present invention is characterized by having a phase-transition effect, it can be seen that the change of the 6H peak according to the heat treatment conditions.
- FIG. 18 is a view showing peaks (XRD analysis results) of SIC bulk prepared by chemical vapor deposition
- the SIC bulk is 3C-SiC.
- 19 to 21 show the results of XRD analysis after heat treatment of the 3C-SiC.
- the phase transition process when the phase transition process is performed on the SIC bulk, it can be seen that a peak of 6H-SiC exists.
- the 6H-SiC is a part of the 3C-SiC is produced by the phase transition, therefore, the height of the 6H-SiC peak may vary depending on the conditions of the phase transition process (heat treatment process presented in the previous embodiment of the present invention). .
- the difference in the height of the 6H-SiC peak means that the component ratio occupied by 6H-SiC in the total SiC is different. That is, the ratio of 6H-SiC in the total SiC is different.
- 6H-SiC can be changed as below according to heat treatment.
- the characteristics of the SiC bulk produced by adjusting the concentration and ratio of nitrogen, MTS, hydrogen is different. And the characteristic change is as follows.
- the concentration of nitrogen in the SiC bulk will vary from 10x10 16 Atoms / cc to 10x10 20 Atoms / cc.
- the resistance value of the SiC bulk varies from 0,01 Ohm-cm to 80 Ohm-cm.
- Thermal conductivity varies from 150 W / mK to 500 W / mK.
- Flexural strength is possible from 400 Mpa to 500 Mpa.
- the impurities ((Al, B, Cl, Fe, Ni and S) in the SiC bulk remain below 6 ppmw.
- the SiC bulk layer is two layers or two or more layers, there is a difference in characteristics depending on each layer.
- the conditions can be changed as follows in the middle of the manufacturing process.
- the spray nozzle can be changed.
- the nitrogen concentration can be changed.
- phase transition process heat treatment step
- conditions of the phase transition process can be changed.
- the resistance value of the first layer is higher than that of the second layer.
- the resistance value of the upper layer is higher than the resistance value of the lower layer (but vice versa).
- the nitrogen concentration of the first layer is higher than the nitrogen concentration of the second layer.
- the nitrogen concentration value of the upper layer is higher than the nitrogen concentration value of the lower layer (but vice versa).
- the thermal conductivity of the first layer is higher than that of the second layer.
- the thermal conductivity of the upper layer is higher than that of the lower layer (but vice versa).
- the bending strength of the first layer is higher than that of the second layer.
- the bending strength of the upper layer is higher than the lower layer (but vice versa).
- the bending strength of the first layer is higher than that of the second layer.
- the bending strength of the upper layer is higher than the lower layer (but vice versa).
- the height of the 6H peak of the first layer is higher than that of the second layer.
- the peak height of 6H is higher than the lower layer (but vice versa).
- the impurity values of the first layer and the second layer are the same or similar.
- the impurity values of the upper layer and the lower layer are the same or similar.
- the range of visible light wavelength passing through the specimen is 565-590 nm.
- the visible light wavelength of the first layer is different from the visible light wavelength of the two layers.
- the visible light wavelength values of the upper layer and the lower layer are different.
- 22 is a diagram of an embodiment showing a focus ring.
- the silicon carbide obtained through the embodiment of FIGS. 1 to 3 of the present invention, which is a method of chemical vapor deposition, is 3C-SiC, which is ⁇ -SiC, and 3C-SiC, which is ⁇ -SiC, is 6H, which is ⁇ -SiC, through a phase transition process. It is made of -SiC.
- the ratio of 6H-SiC which is ⁇ -SiC may vary depending on the phase transition process conditions.
- phase transition process is different, a small amount of 6H-SiC may be present in the entire SiC (see FIG. 19 of the present invention).
- the present invention is characterized in that the focus ring 100 is made of SiC containing a predetermined ratio 6H-SiC by phase-transferring 3C-SiC made by chemical vapor deposition.
- FIGS. 4 to 21 become characteristics of the focus ring 18 of the present invention.
- 23 and 24 are diagrams of embodiments showing the cross section of the focus ring (cutting surface assuming cut along line A-A in FIG. 22).
- FIG. 23 is a diagram of an embodiment where no step exists
- FIG. 23 is a cross section of one side cut off a portion of the donut-shaped. (It is sectional drawing which assumed to cut along the A-A line of FIG. 22.)
- the resistance value of SiC also varies according to the nitrogen value, and since only the surface of the focus ring 100 needs to be low resistance, the middle portion of the cross section of the focus ring 100 does not need to be low resistance.
- the upper layer 250-1 and the lower layer 250-3 are 0.3 ⁇ or less, and the intermediate layer 250-2 may be 1 ⁇ or 100 ⁇ or more, and the intermediate layer may be stainless steel. Aluminum can also be used.
- the ratio of 6H-SiC in the total SiC may be different for each layer.
- 24 is a diagram of an embodiment where a step exists.
- the high side 101 and the low side 102 may have different degrees of exposure to acid in the etching process, and the external environment may be different as the wafer is not raised.
- the ratio of 6H-SiC in the total SiC may be different, the resistance may be different, the nitrogen concentration may be different.
- the resistance value of the first layer is higher than that of the second layer.
- the resistance value of the upper layer is higher than the resistance value of the lower layer (but vice versa).
- the nitrogen concentration of the first layer is higher than the nitrogen concentration of the second layer.
- the nitrogen concentration value of the upper layer is higher than the nitrogen concentration value of the lower layer (but vice versa).
- the thermal conductivity of the first layer is higher than that of the second layer.
- the thermal conductivity of the upper layer is higher than that of the lower layer (but vice versa).
- the bending strength of the first layer is higher than that of the second layer.
- the bending strength of the upper layer is higher than the lower layer (but vice versa).
- the bending strength of the first layer is higher than that of the second layer.
- the bending strength of the upper layer is higher than the lower layer (but vice versa).
- the height of the 6H peak of the first layer is higher than that of the second layer.
- the peak height of 6H is higher than the lower layer (but vice versa).
- the impurity values of the first layer and the second layer are the same or similar.
- the impurity values of the upper layer and the lower layer are the same or similar.
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Abstract
Description
Claims (17)
- 식각 특성이 향상된 화학기상증착 실리콘 카바이드(SIC) 벌크에서,상기 실리콘 카바이드(SIC)는 MTS(메틸트리클로로실레인, Methyltrichlorosilane), 수소(H2) 및 질소(N2) 가스가 사용되어, 화학기상 증착법에 의하여 제조되고,상기 화학 기장증착법에 의하여 제조된 SIC는 β- SiC(3C-SiC) 이고,상기 화학 기장증착법에 의하여 제조된 SIC 내에는 6H-SiC 도 존재하고,상기 실리콘 카바이드 벌크를 XRD 분석하여 피크를 확인할 경우 레퍼런스 코드가 03-065-0360 인 피크가 5개이고, 여기에 레퍼런스 코드가 00-049-1428 인 피크도 존재하고,준안정층인 상기 벌크 표면에서부터 깊이(Depth) 1,500nm이상에서의 질소 농도 값은 4.0x1018 atoms/cm3 이상인 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 제 1항에 있어서,상기 카바이드 벌크의 입자내에 빗살무늬가 형성된 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 제 1항에 있어서,벌크의 입자 내에 빗살 무늬의 면적 비율이 50 % 이상인것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 식각 특성이 향상된 화학기상증착 실리콘 카바이드(SIC) 벌크에서,상기 실리콘 카바이드(SIC)는 MTS(메틸트리클로로실레인, Methyltrichlorosilane), 수소(H2) 및 질소(N2) 가스가 사용되어, 화학기상 증착법에 의하여 제조되고,상기 화학 기장증착법에 의하여 제조된 SIC는 β- SiC(3C-SiC) 이고,상기 화학 기장증착법에 의하여 제조된 SIC 내에는 6H-SiC 도 존재하고,상기 실리콘 카바이드 벌크를 XRD 분석하여 피크를 확인할 경우 레퍼런스 코드가 03-065-0360 인 피크가 5개이고, 여기에 레퍼런스 코드가 00-049-1428 인 피크도 존재하고,준안정층인 상기 벌크 표면에서부터 깊이(Depth) 1,500nm이상에서의 질소 농도 값은 4.0x1019atoms/cm3 이상인 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 제 4항에 있어서,미량원소가 5ppm 이하인 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 제 4항에 있어서,굴곡 강도는 350 ∼ 650MPa 인 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 식각 특성이 향상된 화학기상증착 실리콘 카바이드(SIC) 벌크에서,상기 실리콘 카바이드(SIC)는 MTS(메틸트리클로로실레인, Methyltrichlorosilane), 수소(H2) 및 질소(N2) 가스가 사용되어, 화학기상 증착법에 의하여 제조되고,상기 화학 기장증착법에 의하여 제조된 SIC는 β- SiC(3C-SiC) 이고,상기 화학 기장증착법에 의하여 제조된 SIC 내에는 6H-SiC 도 존재하고,상기 실리콘 카바이드 벌크를 XRD 분석하여 피크를 확인할 경우 레퍼런스 코드가 03-065-0360 인 피크가 5개이고, 여기에 레퍼런스 코드가 00-049-1428 인 피크도 존재하고,상기 실리콘 카바이드의 저항 값이 0.3 Ω 이하 혹은 0.003 Ω 이하인 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 제 7항에 있어서,상기 카바이드 벌크 내에 입자가 존재하고, 상기 입자 내에 빗살무늬가 형성된 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 제 8항에 있어서,상기 입자의 크기는 평균 약 40 ∼ 100㎛ 인 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 식각 특성이 향상된 화학기상증착 실리콘 카바이드(SIC) 벌크에서,상기 실리콘 카바이드(SIC)는 MTS(메틸트리클로로실레인, Methyltrichlorosilane), 수소(H2) 및 질소(N2) 가스가 사용되어, 화학기상 증착법에 의하여 제조되고,상기 화학 기장증착법에 의하여 제조된 SIC는 β- SiC(3C-SiC) 이고,상기 화학 기장증착법에 의하여 제조된 SIC 내에는 6H-SiC 도 존재하고,상기 실리콘 카바이드 벌크를 XRD 분석하여 피크를 확인할 경우 레퍼런스 코드가 03-065-0360 인 피크가 5개이고, 여기에 레퍼런스 코드가 00-049-1428 인 피크도 존재하고,상기 실리콘 카바이드 저항 값이 1 Ω 이하인 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 제 10항에 있어서,결정 입자가 생성될 때, 입자의 크기는 평균 약 40 ∼ 100 ㎛ 인 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 실리콘 카바이드(SIC)는 MTS(Methyltrichlorosilane), 수소(H2) 및 질소(N2) 가스가 사용되어, 화학기상 증착법에 의하여 제조되고,상기 화학 기상증착법에 의하여 제조된 SIC는 β- SiC(3C-SiC) 이고,상기 화학 기상 증착법에 의하여 생성된 상기 실리콘 카바이드(SIC)가 상전이 공정을 통하여 6H-SiC로 만들어지고,상기 화학 기상증착법에 의하여 제조된 SIC의 층이 2개층 혹은 2개층 이상일 경우 각각의 층에 따라 특성에 차이가 할 때,2 개층일 경우 제 1층의 저항 값과 제 2층의 저항값은 다르고,2개층일 경우 제 1층의 질소 농도 값과 제 2층 질소 농도 값은 다르고,2개층일 경우 제 1층의 열전도성과 제 2층 열전도성이 다른 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 제 12항에 있어서,상기 SIC를 두께 5 mm 이상 15 mm 이하로 시편을 만들고, 백색 LED 광이 조사되면 노랑색 파장이 투과되는 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 제 12항에 있어서,제 1층과 제 2층의 휨 강도가 다른 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 제 12항에 있어서,제 1층과 제 2층에서 6H-SiC 피크의 높이가 다른 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 제 12항에 있어서,제 1층과 제 2층에서 분순물의 농도는 균일한 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
- 제 12항에 있어서,제 1층의 가시광선 파장 값은 2층의 가시광선 파장 값과 다른 것을 특징으로 하는 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크.
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US16/479,551 US11859309B2 (en) | 2018-06-01 | 2019-05-22 | Chemical-vapor-deposition silicon carbide bulk having improved etching characteristic |
KR1020197015436A KR20190137763A (ko) | 2018-06-01 | 2019-05-22 | 식각 특성이 향상된 화학기상증착 실리콘 카바이드 벌크 |
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CN117401979B (zh) * | 2023-11-02 | 2024-09-10 | 湖南德智新材料有限公司 | 一种制备碳化硅陶瓷材料的方法、应用及碳化硅陶瓷材料 |
CN117248275A (zh) * | 2023-11-20 | 2023-12-19 | 希科半导体科技(苏州)有限公司 | 碳化硅化学气相沉积外延方法和碳化硅外延片 |
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KR20190137763A (ko) | 2019-12-11 |
KR20210003709A (ko) | 2021-01-12 |
KR20220008393A (ko) | 2022-01-20 |
US20210355603A1 (en) | 2021-11-18 |
KR20220149760A (ko) | 2022-11-08 |
US11859309B2 (en) | 2024-01-02 |
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