WO2019227861A1 - 上电极组件、反应腔室以及原子层沉积设备 - Google Patents

上电极组件、反应腔室以及原子层沉积设备 Download PDF

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Publication number
WO2019227861A1
WO2019227861A1 PCT/CN2018/115027 CN2018115027W WO2019227861A1 WO 2019227861 A1 WO2019227861 A1 WO 2019227861A1 CN 2018115027 W CN2018115027 W CN 2018115027W WO 2019227861 A1 WO2019227861 A1 WO 2019227861A1
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Prior art keywords
channel
air inlet
upper electrode
air
air intake
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PCT/CN2018/115027
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English (en)
French (fr)
Chinese (zh)
Inventor
兰云峰
史小平
李春雷
王勇飞
王洪彪
Original Assignee
北京北方华创微电子装备有限公司
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Application filed by 北京北方华创微电子装备有限公司 filed Critical 北京北方华创微电子装备有限公司
Priority to KR1020207033338A priority Critical patent/KR102430392B1/ko
Priority to JP2020566989A priority patent/JP7267308B2/ja
Priority to SG11202011520TA priority patent/SG11202011520TA/en
Publication of WO2019227861A1 publication Critical patent/WO2019227861A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present disclosure relates to the technical field of semiconductor manufacturing, and in particular, to an upper electrode assembly, a reaction chamber, and an atomic layer deposition device.
  • thin film deposition processes are widely used in equipment in many fields, such as semiconductors, integrated circuits, solar panels, flat-panel displays, microelectronics, light-emitting diodes, and so on.
  • the atomic layer deposition (ALD) process is generally used for thin film deposition.
  • the thin films generated by the ALD process are very thin and have significant advantages over other processes.
  • the plasma enhanced ALD (Plasma Enhanced ALD, hereinafter referred to as PE-ALD) process in the ALD process can be used to prepare various thin films.
  • the capacitive plasma-enhanced ALD process is to pass two kinds of process gases that do not react under normal circumstances into the reaction chamber together, and perform the ALD process by adjusting the radio frequency cycle.
  • the existing capacitive plasma enhanced ALD device includes a reaction chamber 100 and an upper electrode assembly, where the upper electrode assembly includes a shower plate 200 and an air inlet pipe 300.
  • the air inlet port 400 of the air inlet pipe 300 is grounded, and the process gas enters the reaction chamber 100 through the air inlet pipe 300 and the shower plate 200 in this order.
  • the shower plate 200 is electrically connected to a radio frequency power supply. When the radio frequency power supply is turned on, the shower plate 200 serves as an electrode plate to excite the process gas in the reaction chamber to form a plasma.
  • the present disclosure aims to at least partially solve the technical problems existing in the prior art, and proposes an upper electrode assembly, a reaction chamber, and an atomic layer deposition device, which avoids a potential difference between the air intake structure and the upper electrode plate, and is effective Avoid the occurrence of sparks.
  • an upper electrode assembly including an air intake structure and an upper electrode plate, the air intake structure is provided with a first passage; the upper electrode plate is provided with a second passage, wherein, the The first channel is used to introduce a process gas into the second channel, and the second channel is used to introduce a process gas into the reaction chamber, and further includes an air inlet isolation component, which is disposed at the Between the upper electrode plate and the air inlet structure, for introducing the process gas in the first channel into the second channel, the inner wall of the first channel and the The inner wall is electrically insulated.
  • the air intake isolation assembly includes an insulating member disposed between the upper electrode plate and the air intake structure, and an intermediate passage is provided in the insulating member.
  • the intermediate channel communicates with the first channel and the second channel, respectively, and the intermediate channel adopts an air intake isolation structure, and the air intake isolation structure is used to connect the inner wall of the first channel and the second channel
  • the inner wall is electrically insulated.
  • the air intake isolation assembly includes:
  • An insulating member is provided between the upper electrode plate and the air intake structure for electrically insulating the upper electrode plate from the air intake structure; and the intermediate passage is provided in the insulating member The intermediate channel communicates with the first channel and the second channel, respectively;
  • An air intake isolation structure is provided in the intermediate channel, and the air intake isolation structure is used to electrically insulate the inner wall of the first channel and the inner wall of the second channel.
  • the air inlet isolation structure includes at least one air inlet hole, and the axis of the air inlet hole and the axis of the intermediate channel are parallel to each other; or, the axis of the air inlet hole and the A predetermined included angle is formed between the axes of the intermediate channels.
  • the plurality of air intake holes are distributed on at least one circumference centered on an axis of the intermediate channel; or, a plurality of the air intake holes
  • the holes are arranged in an array with respect to the radial section of the intermediate channel.
  • the air intake isolation structure includes at least two groups of air inlet holes, each group of air hole groups includes at least one air inlet hole; an axis of the air inlet holes in the air hole group Parallel to the axis of the intermediate channel; or a preset angle is formed between the axis of the air inlet and the axis of the intermediate channel;
  • angles of the axes of the air intake holes in the different air intake hole groups with respect to the axis of the intermediate channel are different; and / or the radial cross-sectional shapes of the air intake holes in different air intake hole groups are different.
  • the air intake isolation structure includes two groups of air hole groups, namely a first air hole group and a second air hole group, wherein:
  • the air inlet holes in the air hole group are circular through holes;
  • each air inlet hole in the second air inlet hole group There are a plurality of air inlet holes in the second air inlet hole group, and they are distributed on a second circumference centered on the axis of the intermediate passage; and each air inlet hole in the second air inlet hole group
  • the air holes are rectangular through holes, and a length direction of a radial cross-sectional shape of the rectangular through holes is provided along a radial direction of the second circumference.
  • a value of the preset included angle ranges from 30 degrees to 89 degrees.
  • the air inlet hole is a circular through hole; a diameter of the circular through hole ranges from 0.5 mm to 4 mm.
  • the diameter of the circular through hole ranges from 0.5 mm to 4 mm.
  • a range of a radial cross-sectional area of the rectangular through hole is 1 mm 2 to 20 mm 2 .
  • the upper electrode plate is a shower plate; the shower plate is provided with spray holes, and an axis of the air inlet hole and an axis of the spray hole are staggered from each other.
  • the upper electrode plate is a shower plate; the shower plate is provided with spray holes, and an axis of the air inlet hole and an axis of the spray hole are staggered from each other.
  • a reaction chamber including a chamber body and any of the above upper electrode assemblies.
  • an atomic layer deposition apparatus including the above-mentioned reaction chamber.
  • the direct contact path between the air intake structure and the upper electrode plate is blocked by providing an air inlet isolation component, and The inner wall is electrically insulated from the inner wall of the second channel, thereby avoiding a potential difference between the air intake structure and the upper electrode plate, thereby effectively avoiding the occurrence of sparks.
  • FIG. 1 is a schematic diagram of a prior art capacitive plasma enhanced atomic layer deposition device
  • FIG. 2 is a cross-sectional structural view of an upper electrode assembly according to a first embodiment of the present disclosure
  • FIG. 3 is a side view of an air intake isolation structure used in the first embodiment of the present disclosure
  • 4a and 4b are a perspective view and a top view, respectively, of an air intake isolation structure according to a first embodiment of the present disclosure
  • FIG 5 is another side view of the air intake isolation structure used in the first embodiment of the present disclosure.
  • FIG. 6 is another side view of the air intake isolation structure used in the first embodiment of the present disclosure.
  • FIG. 7 is a sectional structural view of an upper electrode assembly according to a second embodiment of the present disclosure.
  • FIG. 8a and 8b are a perspective structural view and a top view of an air intake isolation structure used in a second embodiment of the present disclosure, respectively;
  • FIG. 9 is a perspective view of an air intake isolation structure used in a second embodiment of the present disclosure.
  • FIG. 10 is a sectional structural view of a reaction chamber provided by a third embodiment of the present disclosure.
  • 10-intake structure 101-first channel; 102-first branch channel; 103-second branch channel; 104-purge channel; 105-intake manifold block sealing groove;
  • 3-chamber body 31- process reaction zone; 32- process zone uniform flow grid; 33- support base.
  • the present invention aims to solve at least one of the technical problems existing in the prior art, and proposes an upper electrode assembly, a reaction chamber, and an atomic layer deposition device.
  • the first embodiment of the present disclosure provides an upper electrode assembly, which can be applied to an atomic layer deposition apparatus, and particularly to a capacitive plasma enhanced atomic layer deposition apparatus.
  • the upper electrode assembly is placed on the top of the reaction chamber of the atomic layer deposition equipment, and includes: an air inlet structure 10 and an upper electrode plate 2.
  • the air intake structure 10 is provided with a first channel 101.
  • the air intake structure 10 is also provided with at least two branch channels.
  • the precursor A and the precursor B pass through The two branch channels enter the first channel 101 at the same time and are mixed in the first channel 101, that is, the first channel 101 is used as a main channel for mixing and transporting the mixed gas of the precursor A and the precursor B.
  • Precursor A and Precursor B are two process gases that do not react under normal conditions.
  • the upper electrode plate 2 is provided with a second channel 21.
  • the first channel 101 introduces the mixed gas of the precursor A and the precursor B into the second channel 21, and the second channel 21 is used to introduce the mixed gas into the reaction chamber.
  • the upper electrode plate 2 is a shower plate.
  • the shower plate is placed on the top of the reaction chamber, and is connected to a radio frequency generator 22, which is used to load the shower plate with radio frequency power to excite the process gas in the reaction chamber to form a plasma.
  • the shower plate has a uniform flow cavity, a central air inlet hole is provided at the upper end of the uniform flow cavity, and a plurality of spray holes are provided at the lower end of the uniform flow cavity, for uniformly outputting the process gas to the reaction chamber .
  • the second passage 21 may be a hollow pipe extending along the axis of the shower plate, and communicates with the central air inlet of the uniform flow cavity; or, the second passage 21 is the central air inlet of the uniform flow cavity.
  • the upper electrode assembly also includes an air intake isolation assembly, which is disposed between the upper electrode plate 2 and the air intake structure 10 and is used to introduce the process gas in the first channel 101 into the second channel 21 while The inner wall of the first channel 101 and the inner wall of the second channel 21 are electrically insulated.
  • the so-called electrical insulation refers to blocking the direct contact path between the positive electrode and the negative electrode so that no current passes between the two.
  • the shower plate is used as the positive electrode
  • the air intake structure 10 is used as the negative electrode. If the first channel 101 and the second channel 21 are directly connected, a potential difference is easily generated between the two.
  • an air intake isolation component between the upper electrode plate 2 and the air intake structure 10
  • a direct contact path between the positive electrode and the negative electrode can be blocked (indicated by an arrow in FIG. 2), and the first channel 101
  • the inner wall of the substrate is electrically insulated from the inner wall of the second channel 21 to avoid the generation of a potential difference, thereby effectively avoiding the occurrence of sparking.
  • the air inlet isolation component can allow the process gas to pass through, so that the gas from the first channel 101 can be introduced into the second channel 21 without affecting the gas flow.
  • the air intake isolation assembly includes: an insulating member 11 and an air intake isolation structure 12.
  • the insulating member 11 is made of an insulating material and is provided between the upper electrode plate 2 and the air intake structure 10 for electrically insulating the upper electrode plate 2 from the air intake structure 10; and an intermediate portion is provided in the insulating member 11 Channel 111, which is in communication with the first channel 101 and the second channel 21, respectively, so that the gas from the first channel 101 is introduced into the second channel 21.
  • An air-intake isolation structure 12 is disposed in the intermediate channel 111.
  • the air-intake isolation structure 12 is used to electrically insulate the inner wall of the first channel 101 and the inner wall of the second channel 21, thereby avoiding the generation of a potential difference.
  • the air intake structure 10, the insulating member 11 and the shower plate are coaxially arranged, and the three channels of the first channel 101, the intermediate channel 111, and the second channel 21 are also coaxial.
  • the air inlet isolation structure 12 is disposed in the intermediate channel 111, so that it can ensure that there is enough space for gas mixing in the first channel 101, but the present invention is not limited to this In actual application, on the premise that there is sufficient space for gas mixing in the first channel 101, the air inlet isolation structure 12 may also be disposed in the first channel 101 or the first channel 101 and the intermediate channel 111.
  • the air intake isolation structure 12 is a separate component from the insulating member 11, but the present invention is not limited to this. In practical applications, the air intake isolation structure 12 may also be It is formed in the intermediate channel 111, that is, the intermediate channel 111 adopts the air-intake isolation structure 12, which can also electrically isolate the inner wall of the first channel 101 and the inner wall of the second channel 21.
  • the air inlet isolation structure 12 includes a plurality of air inlet holes 120, and the axes of the plurality of air inlet holes 120 and the axis of the intermediate channel 111 are parallel to each other so that the process gas Introduced more smoothly.
  • the radial cross sections of the plurality of air inlet holes 120 relative to the intermediate channel 111 are arranged in an array to uniformly introduce the gas into the second channel 21.
  • the array can be approximated as a circular array, a square array, and the like.
  • the plurality of air inlet holes 120 may also be distributed in any other manner.
  • the plurality of air inlet holes 120 are distributed on at least one circumference centered on the axis of the intermediate channel 111.
  • the number of the air inlet holes 120 is 20 to 200, and more preferably, the number is 80 to 170.
  • all the air inlet holes 120 are circular through holes, and the diameter of the circular through holes ranges from 0.5 to 4 mm, preferably 0.8 to 3 mm. Within this diameter range, the inner wall of the first channel 101 and the inner wall of the second channel 21 can be electrically insulated. The diameters of the air inlet holes 120 may be the same, or may be different, or may be partially the same.
  • all the air inlet holes 120 are circular through holes. However, the present invention is not limited to this. In practical applications, all the air inlet holes 120 may also adopt other diameters. Directional cross-sectional shape, such as square, oval, polygon, etc. In addition, all of the air inlet holes 120 may include two or more air inlet holes with different radial cross-sectional shapes.
  • all the air inlet holes 120 are through holes, but the present invention is not limited to this. In practical applications, the air inlet holes 120 may also be tapered holes or the like. Structures with different axial dimensions.
  • the thickness of the air inlet hole 120 is about 2 mm to 20 mm, preferably 5 mm to 15 mm, such as 10 mm.
  • the inner diameter of the first channel 101 and the intermediate channel 111 is 6 mm to 60 mm, preferably 25 mm to 45 mm, more preferably 30 mm to 40 mm, such as 38 mm.
  • the axes of the plurality of air inlet holes 120 and the axis of the intermediate channel 111 are parallel to each other.
  • the present invention is not limited to this.
  • a predetermined included angle ⁇ is formed between the axes of the plurality of air inlet holes 120 'and the axis of the intermediate channel 111.
  • the preset included angle ⁇ is preferably 30 ° to 89 °, and more preferably 60 ° to 80 °.
  • the air intake isolation structure 12 includes at least two groups of air inlet holes, each group of air hole groups includes at least one air inlet hole; the axis of the air inlet hole in the air hole group and the axis of the intermediate channel 111 They are parallel to each other; or, a predetermined angle is formed between the axis of the air inlet hole and the axis of the intermediate channel 111.
  • the angles of the axes of the intake holes with respect to the axis of the intermediate channel 111 in different intake hole groups are different; and / or the radial cross-sectional shapes of the intake holes in different intake hole groups are different. That is, the above-mentioned air intake isolation structure 12 includes two or more types of air intake hole groups with different inclination angles and / or radial cross-sectional shapes.
  • the air inlet isolation structure 12 includes at least two groups of air inlet holes, namely a first air inlet hole group and a second air inlet hole group, wherein the first air inlet hole group includes at least one first air hole group.
  • the axis of the first air inlet hole 121 and the axis of the intermediate channel 111 are parallel to each other, and a preset angle ⁇ is formed between the axis of the second air hole 122 and the axis of the intermediate channel 111.
  • the preset angle ⁇ is preferably 30 ° to 89 °, and more preferably 60 ° to 80 °.
  • first air inlet hole 121 and the second air inlet hole 122 may be the same or different.
  • first and second air intake holes 121 and 122 may be circular through holes, but the diameters of the two may be different.
  • the air inlet isolation structure 12 includes at least two groups of air inlet holes, namely a first air inlet hole group and a second air inlet hole group.
  • the first air inlet hole group includes a plurality of first air inlet holes 121 and is distributed on at least two first circumferences having different radii with the axis of the intermediate channel 111 as a center, and each of the first air inlet holes 121 is It is a round through hole.
  • the plurality of first air inlet holes 121 are distributed on three first circles with different radii centered on the axis of the intermediate channel 111, and the three first circles are respectively located in the center of the intermediate channel 111 Region, middle region, and edge region. In this way, the first air inlet holes 121 can be uniformly distributed in the radial direction of the middle channel 111.
  • the radial distance between two adjacent first circumferences is 3 mm to 10 mm, preferably 4 mm to 8 mm.
  • the number of the first air inlet holes 121 on each first circumference can be freely set according to specific needs.
  • the number of the first air inlet holes 121 on the first circumference of the outermost circle is 5 to 20, preferably 8 to 15; the number of the first air inlet holes 121 on the first circumference in the middle may be It is less than or equal to the number of the first air inlet holes 121 on the first circumference of the outermost circle.
  • the number of the first air inlet holes 121 on the middle first circumference is 5 to 20, and preferably 8 to 15.
  • the number of the first air intake holes 121 on the first circumference of the innermost circle may be less than or equal to the number of the first air intake holes 121 on the first circumference in the middle.
  • the number of the first air inlet holes 121 on the first circumference of the innermost ring is 1 to 8, preferably 2 to 6.
  • the diameter of the first air inlet hole 121 on each first circumference can be freely set according to specific needs.
  • the larger the radius of the first circumference where the first air inlet hole 121 is located the larger the diameter of the first air inlet hole 121 is.
  • the diameter of the first air inlet hole 121 on the first circumference of the outermost circle is the largest; the diameter of the first air inlet hole 121 on the first circumference of the innermost circle is the smallest.
  • the space of the air intake isolation structure 12 can be fully utilized, so that the amount of process gas passing through per unit time is larger, so that the process gas can pass through the air intake isolation structure 12 faster.
  • the inclination angle of the first air inlet hole 121 on each first circumference can be freely set according to specific needs.
  • the axis of the first air inlet hole 121 on each first circumference and the axis of the intermediate channel 111 are parallel to each other; or a predetermined included angle ⁇ is formed with the axis of the intermediate channel 111.
  • the preset angle ⁇ is preferably 30 ° to 89 °, and more preferably 60 ° to 80 °.
  • the inclination angles of the first air inlet holes 121 on the same first circumference may be the same, or may be different.
  • the inclination angles of the first air inlet holes 121 on different first circles may be the same, or may be different.
  • the first air inlet hole 121 is a circular through hole, but the present invention is not limited to this. In practical applications, the radial cross-sectional shape of the first air inlet hole 121 is also It can be square, oval or polygon, and so on.
  • the second air inlet hole group includes a plurality of second air inlet holes 122, and is distributed on a second circumference centered on the axis of the intermediate channel 111;
  • the two air inlet holes 122 are both rectangular through holes, and the longitudinal direction of the radial cross-sectional shape of the rectangular through holes is provided along the radial direction of the second circumference.
  • the radial cross-sectional shape of the second air inlet hole 122 may also be an elongated ellipse or a rectangle-like shape with rounded corners.
  • a second air inlet hole 122 is disposed between the first air inlet holes 121.
  • the first air intake holes 121 on the first circumference of the innermost circle are all located inside the inner end of the second air intake hole 122. In this way, the first air inlet holes 121 and the second air inlet holes 122 can be staggered in the circumferential direction of the intermediate channel 111, so that the process gas can be more fully mixed.
  • the second air inlet hole 122 is a rectangular through hole, and a value of a radial cross-sectional area thereof ranges from 1 mm 2 to 20 mm 2 , and more preferably, 5 mm 2 to 15 mm 2 .
  • the inclination angle of the second air inlet hole 122 can be freely set according to specific needs.
  • the axis of the second air inlet hole 122 (parallel to the axis of the intermediate channel) and the axis of the intermediate channel 111 are parallel to each other; or a preset angle ⁇ is formed with the axis of the intermediate channel 111.
  • the preset angle ⁇ is preferably 30 ° to 89 °, and more preferably 60 ° to 80 °.
  • the upper electrode assembly of each of the above embodiments is described by taking FIG. 2 and FIG. 3 as an example, and the air inlet isolation structure 12 is embedded in the intermediate channel 111.
  • the radial cross-sectional shape of the intermediate channel 111 is circular.
  • the intermediate channel 111 can be divided into an inlet section and a main body section communicating with the inlet section, wherein the diameter of the inlet section is larger than the diameter of the main body section.
  • the air intake isolation structure 12 includes a columnar body, which is divided into a first section and a second section along its axis, wherein an outer diameter of the first section is larger than an outer diameter of the second section.
  • the outer peripheral wall of the first section matches the inner wall of the entrance section of the intermediate channel 111
  • the outer peripheral wall of the second section matches the inner wall of the main section of the intermediate channel 111, so that the air intake isolation structure 12 is embedded in the intermediate channel 111 Inside.
  • the air inlet isolation structure 12 can be easily positioned, and it is convenient to install and disassemble and clean.
  • the radial cross-sectional shape of the first channel 101 is also circular, and the diameter of the first channel 101 is smaller than the outer diameter of the first section of the air intake isolation structure 12, so that the air intake structure 10 can press the air intake isolation structure 12, it is helpful to improve the firmness of installation.
  • Another embodiment of the present disclosure provides a reaction chamber including a chamber body 3 and the upper electrode assembly of any of the above embodiments.
  • the support base 33 is disposed at the bottom of the chamber body 3 and grounded, and has a heating function for supporting and heating the substrate.
  • the chamber body 3, the shower plate of the upper electrode assembly and the support base 33 surround a process reaction area 31, which is used to implement the atomic layer deposition process.
  • a part of the sidewall of the chamber body 3 surrounding the process reaction zone 31 is further provided with a process zone uniform flow grid 32 for improving the uniformity of the process gas flow.
  • the side wall of the air intake structure 10 is provided with a first channel 101, a first branch channel 102, a second branch channel 103, and a purge channel 104, and a first branch channel 102, a second branch channel 103, and a purge channel. 104 are in communication with the first channel 101.
  • the first branch channel 102, the second branch channel 103, and the purge channel 104 are all located at different positions in the circumferential direction of the sidewall of the air intake structure 10 and at the same height.
  • An insulating block sealing groove 112 is opened on the upper surface of the shower plate, and the insulation member 11 and the shower plate are sealed by a seal ring in the insulating block sealing groove 112.
  • the lower surface of the air intake structure 10 is provided with an air intake integrated block sealing groove 105, and the air intake structure 10 and the insulating block are sealed by a seal ring in the air intake integrated block sealing groove 105.
  • Precursor A enters first channel 101 through first branch channel 102, precursor B enters first channel 101 through second branch channel 103, and current precursors A and B enter the reaction chamber and enter the chamber body 3 Reaction zone 31.
  • the precursor A is adsorbed on the substrate surface.
  • the inert gas enters the first channel 101 through the purge channel 104, and enters the process reaction zone 31 through the air inlet isolation structure, the intermediate channel 111, and the shower plate to purge the remaining precursor A.
  • the RF generator 22 is activated to generate a plasma of the precursor B, and the plasma reacts with the precursor A on the surface of the substrate to form a thin film. The above process is repeated continuously, and the film is repeatedly deposited on the substrate until the film reaches the thickness required by the process.
  • Yet another embodiment of the present disclosure provides an atomic layer deposition apparatus, more specifically a capacitive plasma enhanced atomic layer deposition apparatus, which includes the reaction chamber of the above embodiment.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
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  • Chemical Vapour Deposition (AREA)
PCT/CN2018/115027 2018-06-01 2018-11-12 上电极组件、反应腔室以及原子层沉积设备 WO2019227861A1 (zh)

Priority Applications (3)

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KR1020207033338A KR102430392B1 (ko) 2018-06-01 2018-11-12 상부 전극 어셈블리, 반응 챔버 및 원자층 증착 디바이스
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