SG11202011520TA - Upper electrode assembly, reaction chamber and atomic layer deposition device - Google Patents

Upper electrode assembly, reaction chamber and atomic layer deposition device

Info

Publication number
SG11202011520TA
SG11202011520TA SG11202011520TA SG11202011520TA SG11202011520TA SG 11202011520T A SG11202011520T A SG 11202011520TA SG 11202011520T A SG11202011520T A SG 11202011520TA SG 11202011520T A SG11202011520T A SG 11202011520TA SG 11202011520T A SG11202011520T A SG 11202011520TA
Authority
SG
Singapore
Prior art keywords
reaction chamber
upper electrode
electrode assembly
atomic layer
layer deposition
Prior art date
Application number
SG11202011520TA
Other languages
English (en)
Inventor
Yunfeng Lan
Xiaoping Shi
Chunlei Li
Yongfei Wang
Hongbiao Wang
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11202011520TA publication Critical patent/SG11202011520TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32541—Shape
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3321—CVD [Chemical Vapor Deposition]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
SG11202011520TA 2018-06-01 2018-11-12 Upper electrode assembly, reaction chamber and atomic layer deposition device SG11202011520TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810555365.9A CN108807127B (zh) 2018-06-01 2018-06-01 上电极组件、反应腔室以及原子层沉积设备
PCT/CN2018/115027 WO2019227861A1 (zh) 2018-06-01 2018-11-12 上电极组件、反应腔室以及原子层沉积设备

Publications (1)

Publication Number Publication Date
SG11202011520TA true SG11202011520TA (en) 2020-12-30

Family

ID=64089998

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202011520TA SG11202011520TA (en) 2018-06-01 2018-11-12 Upper electrode assembly, reaction chamber and atomic layer deposition device

Country Status (6)

Country Link
JP (1) JP7267308B2 (ko)
KR (1) KR102430392B1 (ko)
CN (1) CN108807127B (ko)
SG (1) SG11202011520TA (ko)
TW (1) TWI699451B (ko)
WO (1) WO2019227861A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109487238B (zh) * 2018-12-17 2021-01-29 北京北方华创微电子装备有限公司 进气栅组件及原子层沉积设备
CN114171364B (zh) * 2021-12-03 2024-05-17 北京北方华创微电子装备有限公司 半导体工艺设备

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0521393A (ja) * 1991-07-11 1993-01-29 Sony Corp プラズマ処理装置
JP3030280B2 (ja) 1998-06-18 2000-04-10 国際電気株式会社 基板処理装置
JP2000273638A (ja) 1999-03-24 2000-10-03 Ebara Corp 化学的気相成長装置
JP2002270598A (ja) * 2001-03-13 2002-09-20 Tokyo Electron Ltd プラズマ処理装置
JP4283520B2 (ja) * 2002-10-07 2009-06-24 積水化学工業株式会社 プラズマ成膜装置
US20060137608A1 (en) 2004-12-28 2006-06-29 Choi Seung W Atomic layer deposition apparatus
US7608549B2 (en) 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
JP4628900B2 (ja) * 2005-08-24 2011-02-09 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN101488446B (zh) * 2008-01-14 2010-09-01 北京北方微电子基地设备工艺研究中心有限责任公司 等离子体处理设备及其气体分配装置
FR2930561B1 (fr) * 2008-04-28 2011-01-14 Altatech Semiconductor Dispositif et procede de traitement chimique en phase vapeur.
US8291857B2 (en) * 2008-07-03 2012-10-23 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
JP2010024513A (ja) * 2008-07-23 2010-02-04 Sony Corp 成膜装置および成膜方法
US20120097330A1 (en) * 2010-10-20 2012-04-26 Applied Materials, Inc. Dual delivery chamber design
JP5848140B2 (ja) * 2012-01-20 2016-01-27 東京エレクトロン株式会社 プラズマ処理装置
JP2013254901A (ja) * 2012-06-08 2013-12-19 Toshiba Corp シール材およびエッチング装置
JP6078354B2 (ja) * 2013-01-24 2017-02-08 東京エレクトロン株式会社 プラズマ処理装置
CN104342632B (zh) * 2013-08-07 2017-06-06 北京北方微电子基地设备工艺研究中心有限责任公司 预清洗腔室及等离子体加工设备
CN105390368A (zh) * 2014-09-09 2016-03-09 北京北方微电子基地设备工艺研究中心有限责任公司 晶片预清洗腔室及半导体加工设备

Also Published As

Publication number Publication date
CN108807127B (zh) 2020-03-31
CN108807127A (zh) 2018-11-13
TW202003906A (zh) 2020-01-16
TWI699451B (zh) 2020-07-21
JP7267308B2 (ja) 2023-05-01
KR20210003187A (ko) 2021-01-11
WO2019227861A1 (zh) 2019-12-05
JP2021524887A (ja) 2021-09-16
KR102430392B1 (ko) 2022-08-08

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