SG11201912467XA - Lower electrode mechanism and reaction chamber - Google Patents
Lower electrode mechanism and reaction chamberInfo
- Publication number
- SG11201912467XA SG11201912467XA SG11201912467XA SG11201912467XA SG11201912467XA SG 11201912467X A SG11201912467X A SG 11201912467XA SG 11201912467X A SG11201912467X A SG 11201912467XA SG 11201912467X A SG11201912467X A SG 11201912467XA SG 11201912467X A SG11201912467X A SG 11201912467XA
- Authority
- SG
- Singapore
- Prior art keywords
- lower electrode
- reaction chamber
- electrode mechanism
- chamber
- reaction
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32651—Shields, e.g. dark space shields, Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/026—Shields
- H01J2237/0266—Shields electromagnetic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710464985.7A CN107093545B (en) | 2017-06-19 | 2017-06-19 | The bottom electrode mechanism and reaction chamber of reaction chamber |
| PCT/CN2017/111125 WO2018233192A1 (en) | 2017-06-19 | 2017-11-15 | Lower electrode mechanism and reaction chamber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201912467XA true SG11201912467XA (en) | 2020-01-30 |
Family
ID=59639755
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201912467XA SG11201912467XA (en) | 2017-06-19 | 2017-11-15 | Lower electrode mechanism and reaction chamber |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11410833B2 (en) |
| JP (1) | JP6914374B2 (en) |
| KR (1) | KR102166661B1 (en) |
| CN (1) | CN107093545B (en) |
| SG (1) | SG11201912467XA (en) |
| WO (1) | WO2018233192A1 (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107093545B (en) | 2017-06-19 | 2019-05-31 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
| CN109994356B (en) * | 2017-12-29 | 2022-03-22 | 北京北方华创微电子装备有限公司 | Reaction chamber and semiconductor processing equipment |
| CN108346554A (en) * | 2018-04-24 | 2018-07-31 | 西南林业大学 | A kind of plasma etching and depositing device and method |
| CN112259429B (en) * | 2020-09-30 | 2024-06-21 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment |
| CN113421812B (en) * | 2021-06-23 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and bearing device thereof |
| CN114121584B (en) * | 2021-11-22 | 2024-04-16 | 北京北方华创微电子装备有限公司 | Bottom electrode assembly, semiconductor processing equipment and bottom electrode condensation prevention method |
| CN114141600B (en) * | 2021-11-29 | 2024-06-21 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment and temperature control method of lower electrode chamber |
| CN115692263B (en) * | 2022-10-31 | 2023-06-16 | 北京北方华创微电子装备有限公司 | Semiconductor process chamber and semiconductor process equipment |
| CN115881617B (en) * | 2022-12-25 | 2023-10-24 | 北京屹唐半导体科技股份有限公司 | Slide holder and reaction chamber |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW283250B (en) * | 1995-07-10 | 1996-08-11 | Watkins Johnson Co | Plasma enhanced chemical processing reactor and method |
| US6616767B2 (en) * | 1997-02-12 | 2003-09-09 | Applied Materials, Inc. | High temperature ceramic heater assembly with RF capability |
| KR100262274B1 (en) * | 1997-11-11 | 2000-07-15 | 전주범 | Grid assembly for use in a micro-generator of a microwave oven |
| US6395095B1 (en) * | 1999-06-15 | 2002-05-28 | Tokyo Electron Limited | Process apparatus and method for improved plasma processing of a substrate |
| KR100629065B1 (en) * | 1999-09-14 | 2006-09-27 | 주식회사 엘지생활건강 | Cosmetic compositions |
| JP4660926B2 (en) | 2001-01-09 | 2011-03-30 | 東京エレクトロン株式会社 | Single wafer processing equipment |
| US20050022736A1 (en) * | 2003-07-29 | 2005-02-03 | Lam Research Inc., A Delaware Corporation | Method for balancing return currents in plasma processing apparatus |
| US20050066902A1 (en) * | 2003-09-26 | 2005-03-31 | Tokyo Electron Limited | Method and apparatus for plasma processing |
| CN100499958C (en) * | 2005-12-09 | 2009-06-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Signal transmitting device for electrostatic cartridge |
| JP2007258585A (en) * | 2006-03-24 | 2007-10-04 | Tokyo Electron Ltd | Substrate placing mechanism and substrate processing apparatus |
| JP2011222931A (en) * | 2009-12-28 | 2011-11-04 | Tokyo Electron Ltd | Mounting table structure and treatment apparatus |
| KR101892911B1 (en) * | 2010-08-06 | 2018-08-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Electrostatic chuck and methods of use thereof |
| US10586686B2 (en) * | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
| CN104167343B (en) * | 2013-05-17 | 2016-07-13 | 中微半导体设备(上海)有限公司 | Plasma processing apparatus and radio-frequency shielding fence thereof |
| CN103337444A (en) | 2013-06-08 | 2013-10-02 | 天通吉成机器技术有限公司 | Reaction chamber of dry plasma etcher |
| JP6043968B2 (en) | 2013-10-30 | 2016-12-14 | パナソニックＩｐマネジメント株式会社 | Plasma processing method and electronic device manufacturing method |
| CN105632967B (en) | 2014-10-28 | 2018-08-24 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
| CN106158717B (en) * | 2015-03-31 | 2019-08-23 | 北京北方华创微电子装备有限公司 | Mechanical chuck and semiconductor processing equipment |
| CN106816397A (en) * | 2015-12-01 | 2017-06-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Bottom electrode assembly and semiconductor processing equipment |
| CN207074639U (en) * | 2017-06-19 | 2018-03-06 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
| CN107093545B (en) | 2017-06-19 | 2019-05-31 | 北京北方华创微电子装备有限公司 | The bottom electrode mechanism and reaction chamber of reaction chamber |
-
2017
- 2017-06-19 CN CN201710464985.7A patent/CN107093545B/en active Active
- 2017-11-15 JP JP2019570121A patent/JP6914374B2/en active Active
- 2017-11-15 KR KR1020197029811A patent/KR102166661B1/en active IP Right Grant
- 2017-11-15 SG SG11201912467XA patent/SG11201912467XA/en unknown
- 2017-11-15 US US16/624,246 patent/US11410833B2/en active Active
- 2017-11-15 WO PCT/CN2017/111125 patent/WO2018233192A1/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| US20200321198A1 (en) | 2020-10-08 |
| CN107093545A (en) | 2017-08-25 |
| JP2020524408A (en) | 2020-08-13 |
| CN107093545B (en) | 2019-05-31 |
| KR102166661B1 (en) | 2020-10-16 |
| KR20190126382A (en) | 2019-11-11 |
| JP6914374B2 (en) | 2021-08-04 |
| US11410833B2 (en) | 2022-08-09 |
| WO2018233192A1 (en) | 2018-12-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| SG11201912467XA (en) | Lower electrode mechanism and reaction chamber | |
| GB201608691D0 (en) | Electrode | |
| TWI563716B (en) | Anode electrode | |
| GB201612174D0 (en) | Electrode material | |
| PL3204105T3 (en) | Implantable electrode arrangement | |
| HUE060665T2 (en) | Gas diffusion electrode | |
| IL268067B (en) | Bismuth-based chloride-storage electrodes | |
| GB201408953D0 (en) | Membrane electrode assembly | |
| EP3353536A4 (en) | Solution cathode glow discharge elemental analysis | |
| GB201706553D0 (en) | Electrode assembly | |
| GB2569387B (en) | Electrode | |
| HRP20190334T1 (en) | Implantable electrode arrangement | |
| PT3353336T (en) | Electrode | |
| KR102300870B9 (en) | An electrode assembly | |
| GB201603883D0 (en) | Chamber | |
| PL3163663T3 (en) | Stack-folding typed electrode assembly | |
| IL267782B (en) | Chemical entities suitable for therapy | |
| IL269004A (en) | Hydrogen after burner | |
| GB201412700D0 (en) | Flexible treatment chamber | |
| PL3273163T3 (en) | Gas hearth | |
| SG10201604600XA (en) | Low hydrogen-based covered electrode | |
| LU92383B1 (en) | Pressure reducer with cap-shaped movable chamber | |
| EP3482126C0 (en) | Metallic burner | |
| GB201611252D0 (en) | Electrode | |
| GB201720164D0 (en) | Electrode |