SG11202011520TA - Upper electrode assembly, reaction chamber and atomic layer deposition device - Google Patents
Upper electrode assembly, reaction chamber and atomic layer deposition deviceInfo
- Publication number
- SG11202011520TA SG11202011520TA SG11202011520TA SG11202011520TA SG11202011520TA SG 11202011520T A SG11202011520T A SG 11202011520TA SG 11202011520T A SG11202011520T A SG 11202011520TA SG 11202011520T A SG11202011520T A SG 11202011520TA SG 11202011520T A SG11202011520T A SG 11202011520TA
- Authority
- SG
- Singapore
- Prior art keywords
- reaction chamber
- upper electrode
- electrode assembly
- atomic layer
- layer deposition
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32541—Shape
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810555365.9A CN108807127B (en) | 2018-06-01 | 2018-06-01 | Upper electrode assembly, reaction chamber and atomic layer deposition equipment |
PCT/CN2018/115027 WO2019227861A1 (en) | 2018-06-01 | 2018-11-12 | Upper electrode assembly, reaction chamber and atomic layer deposition device |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202011520TA true SG11202011520TA (en) | 2020-12-30 |
Family
ID=64089998
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202011520TA SG11202011520TA (en) | 2018-06-01 | 2018-11-12 | Upper electrode assembly, reaction chamber and atomic layer deposition device |
Country Status (6)
Country | Link |
---|---|
JP (1) | JP7267308B2 (en) |
KR (1) | KR102430392B1 (en) |
CN (1) | CN108807127B (en) |
SG (1) | SG11202011520TA (en) |
TW (1) | TWI699451B (en) |
WO (1) | WO2019227861A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109487238B (en) * | 2018-12-17 | 2021-01-29 | 北京北方华创微电子装备有限公司 | Air inlet grid assembly and atomic layer deposition equipment |
CN114171364B (en) * | 2021-12-03 | 2024-05-17 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0521393A (en) * | 1991-07-11 | 1993-01-29 | Sony Corp | Plasma processor |
JP3030280B2 (en) | 1998-06-18 | 2000-04-10 | 国際電気株式会社 | Substrate processing equipment |
JP2000273638A (en) | 1999-03-24 | 2000-10-03 | Ebara Corp | Chemical vapor deposition device |
JP2002270598A (en) * | 2001-03-13 | 2002-09-20 | Tokyo Electron Ltd | Plasma treating apparatus |
JP4283520B2 (en) * | 2002-10-07 | 2009-06-24 | 積水化学工業株式会社 | Plasma deposition system |
KR20060076714A (en) * | 2004-12-28 | 2006-07-04 | 에이에스엠지니텍코리아 주식회사 | Atomic layer deposition apparatus |
US7608549B2 (en) * | 2005-03-15 | 2009-10-27 | Asm America, Inc. | Method of forming non-conformal layers |
JP4628900B2 (en) * | 2005-08-24 | 2011-02-09 | 株式会社日立ハイテクノロジーズ | Plasma processing equipment |
CN101488446B (en) * | 2008-01-14 | 2010-09-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus and gas dispensing apparatus thereof |
FR2930561B1 (en) | 2008-04-28 | 2011-01-14 | Altatech Semiconductor | DEVICE AND METHOD FOR CHEMICAL TREATMENT IN STEAM PHASE. |
US8291857B2 (en) * | 2008-07-03 | 2012-10-23 | Applied Materials, Inc. | Apparatuses and methods for atomic layer deposition |
JP2010024513A (en) * | 2008-07-23 | 2010-02-04 | Sony Corp | Film deposition apparatus and film deposition method |
US20120097330A1 (en) * | 2010-10-20 | 2012-04-26 | Applied Materials, Inc. | Dual delivery chamber design |
JP5848140B2 (en) * | 2012-01-20 | 2016-01-27 | 東京エレクトロン株式会社 | Plasma processing equipment |
JP2013254901A (en) * | 2012-06-08 | 2013-12-19 | Toshiba Corp | Sealing material and etching apparatus |
JP6078354B2 (en) * | 2013-01-24 | 2017-02-08 | 東京エレクトロン株式会社 | Plasma processing equipment |
CN104342632B (en) * | 2013-08-07 | 2017-06-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pre-cleaning cavity and plasma processing device |
CN105390368A (en) * | 2014-09-09 | 2016-03-09 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Wafer precleaning cavity and semiconductor processing equipment |
-
2018
- 2018-06-01 CN CN201810555365.9A patent/CN108807127B/en active Active
- 2018-11-09 TW TW107139940A patent/TWI699451B/en active
- 2018-11-12 JP JP2020566989A patent/JP7267308B2/en active Active
- 2018-11-12 SG SG11202011520TA patent/SG11202011520TA/en unknown
- 2018-11-12 KR KR1020207033338A patent/KR102430392B1/en active IP Right Grant
- 2018-11-12 WO PCT/CN2018/115027 patent/WO2019227861A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN108807127B (en) | 2020-03-31 |
WO2019227861A1 (en) | 2019-12-05 |
JP7267308B2 (en) | 2023-05-01 |
KR20210003187A (en) | 2021-01-11 |
JP2021524887A (en) | 2021-09-16 |
KR102430392B1 (en) | 2022-08-08 |
TW202003906A (en) | 2020-01-16 |
CN108807127A (en) | 2018-11-13 |
TWI699451B (en) | 2020-07-21 |
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