WO2019214285A1 - 显示面板母板、显示面板及显示面板制备方法 - Google Patents

显示面板母板、显示面板及显示面板制备方法 Download PDF

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Publication number
WO2019214285A1
WO2019214285A1 PCT/CN2019/071468 CN2019071468W WO2019214285A1 WO 2019214285 A1 WO2019214285 A1 WO 2019214285A1 CN 2019071468 W CN2019071468 W CN 2019071468W WO 2019214285 A1 WO2019214285 A1 WO 2019214285A1
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WO
WIPO (PCT)
Prior art keywords
display panel
area
layer
reflective layer
display
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CN2019/071468
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English (en)
French (fr)
Inventor
张丽
黄玲
谢敏慧
周萍
薛慕容
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kunshan Govisionox Optoelectronics Co Ltd
Yungu Guan Technology Co Ltd
Original Assignee
Kunshan Govisionox Optoelectronics Co Ltd
Yungu Guan Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from CN201820706360.7U external-priority patent/CN208271949U/zh
Priority claimed from CN201810455702.7A external-priority patent/CN108598284B/zh
Application filed by Kunshan Govisionox Optoelectronics Co Ltd, Yungu Guan Technology Co Ltd filed Critical Kunshan Govisionox Optoelectronics Co Ltd
Priority to US16/565,504 priority Critical patent/US20200006714A1/en
Publication of WO2019214285A1 publication Critical patent/WO2019214285A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8722—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/851—Division of substrate

Definitions

  • the present application relates to the field of display technologies, and in particular, to a display panel motherboard, a display panel, and a display panel.
  • OLED Organic light-emitting diode
  • the manufacturing of the display panel is performed after the overall process is performed on the mother board, and then the cutting and separating are further completed, and the process of the back-end module is further completed.
  • a flexible display panel as an example, a plurality of flexible display panels are formed on one large substrate, that is, the panel mother board is displayed, and then cut to form an independent flexible display panel.
  • the display panel mother board is usually cut by cutter wheel cutting and laser cutting. Compared with the cutter wheel, laser cutting is widely used due to its high energy, good unidirectionality, high cutting efficiency and high precision.
  • the film and the substrate are damaged by the heat of cutting.
  • a certain laser cutting strength is required, and a cutting reserved area is reserved to provide a certain range of laser radiation. If the laser cutting strength is too large, the flexible substrate will be subjected to heat to generate a large stress, thereby causing the thin film transistor on the flexible substrate to be easily damaged. If the laser radiation range is too wide, the pixels in the display area will be damaged by the laser.
  • Such a component that is extremely easy to damage the edge of the display panel causes moisture to permeate from the side of the display panel, resulting in poor packaging.
  • the existing display devices are usually packaged with a glass layer (Frit). When the existing display panel is subjected to the glass layer cutting process, cracks are easily left on the cut end faces of the glass glue layer, and the microcracks are easily expanded. The failure of the glass layer is induced, resulting in failure of the entire packaging process.
  • a display panel motherboard includes a plurality of display panels and a cutting reserved area surrounding each of the display panels, wherein at least a portion of the cutting reserved area is provided with a first a reflective layer, the first reflective layer being in the same layer as the source/drain of the display panel.
  • the first reflective layer can reflect laser energy, thereby functioning to amplify laser energy; in actual operation
  • the laser energy can be appropriately reduced, the laser spot is reduced, and the laser energy is amplified by the first reflective layer to achieve the cutting requirement, thereby reducing thermal expansion and causing damage to the film such as the encapsulating film layer, causing moisture to penetrate from the side of the display panel to cause packaging. Poor risk, which improves package reliability and improves the yield and service life of the display panel.
  • the first reflective layer is disposed in the same layer as the source/drain in the thin film transistor (TFT) array substrate of the display panel, and can be synchronously formed in forming the source/drain of the display region without adding a process. Easy to produce.
  • TFT thin film transistor
  • the cutting reserved area is located at least on one side of the display panel, and the first reflective layer is disposed in the cutting reserved area.
  • the display panel further includes a binding area, the binding area is located at one side of the display panel; wherein the cutting reserved area provided with the first reflective layer is tied to the The zones are not located on the same side of the display panel.
  • the display panel is not provided with a side surface of the binding area, and the first reflective layer is disposed in the cutting reserved area.
  • the first reflective layer is a metal reflective layer or a metal alloy reflective layer.
  • the first reflective layer is a multilayer structure.
  • the first reflective layer is a Ti/Al/Ti stack or a Mo/Al/Mo stack.
  • the display panel further includes a package area surrounding the package area, and a second reflective layer is disposed in the non-display area of the package area.
  • the first reflective layer and the second reflective layer are disposed in the same layer.
  • the first reflective layer and the second reflective layer are both metal reflective layers.
  • the display panel includes a thin film encapsulation structure disposed on the display area and the encapsulation area, and the thin film encapsulation structure forms a recess at the interval.
  • the display area is provided with a pixel defining layer
  • the first dam and the second dam surrounding the pixel defining layer are disposed in the package area
  • the thin film encapsulation structure comprises at least two stacked layers. a layer of an inorganic encapsulation layer and an organic encapsulation layer disposed between two adjacent inorganic encapsulation layers, wherein the inorganic encapsulation layer in the thin film encapsulation structure is disposed at a spacing between the first bank and the second bank.
  • the present application further provides a display panel formed by cutting the display panel motherboard of any of the above, the display panel comprising: a display area; and a package area surrounding an outer circumference of the display area; wherein the package area A second reflective layer is disposed inside.
  • the display panel further includes: a substrate; a cover plate disposed opposite to the substrate; wherein the package region is formed by an encapsulation layer, the encapsulation layer bonding the substrate and the cover plate Wherein the substrate and the encapsulation layer and the cover plate enclose a sealed space in which the display device is placed, the encapsulation layer is provided with a groove, and the groove opening faces or faces away from the cover plate, The recess is filled with a solid heat absorbing material.
  • the groove is opened on a surface of the encapsulation layer in a direction enclosing the encapsulation layer.
  • the encapsulation layer is annular, and the groove is disposed adjacent to the outer ring of the encapsulation layer.
  • the groove thickness is less than the thickness of the encapsulation layer.
  • the groove width is 1/2 to 1/3 times the width of the encapsulation layer.
  • the groove has a curved surface in a section perpendicular to the direction of the cover plate.
  • the present application also provides a method for preparing a display panel, the method comprising: providing a substrate, dividing a display area and a package area on the substrate; coating a solid heat absorbing material on an edge of the package area; Coating the glass material on the hot material and completely covering the heat absorbing material; disposing the display device on the display area of the substrate, bonding the substrate and the cover plate to form a sealed space; using the laser along the coating area of the heat absorbing material Cutting.
  • the endothermic material liquefies or vaporizes after laser cutting.
  • FIG. 1 is a schematic front view of a display panel motherboard according to an embodiment of the present application.
  • FIG. 2 is a cross-sectional view of the display panel formed by cutting the display panel of FIG. 1 in a package area;
  • FIG. 3 is a cross-sectional view of a display panel according to an embodiment of the present application.
  • FIG. 4 is a schematic flow chart of a method of manufacturing a display panel according to an embodiment of the present application.
  • FIG. 1 shows a display panel motherboard 10 of an embodiment of the present application, including a plurality of display panels 100 and a cutting reserved area 11 surrounding each of the display panels 100. It can be understood that the plurality of display panels 100 are distributed in an array.
  • At least part of the cutting reserved area 11 is provided with a first reflective layer 111 , and the first reflective layer 111 is disposed in the same layer as the source/drain of the display panel 100 .
  • the first reflective layer 111 can reflect laser energy to amplify the laser energy. Therefore, in actual operation, the laser energy can be appropriately reduced, the laser spot is reduced, and the laser energy is amplified by the first reflective layer 111 to meet the cutting requirement, thereby reducing thermal expansion and causing damage to the film such as the encapsulating film layer, and causing moisture to pass from the display panel.
  • the 100 side penetration causes a risk of poor packaging, thereby improving package reliability and improving the yield and service life of the display panel 100.
  • the first reflective layer 111 is disposed in the same layer as the source/drain in the thin film transistor (TFT) array 120 of the display panel 100, and can be synchronously formed at the source/drain of the display region 101 without Increase the process and facilitate production.
  • TFT thin film transistor
  • the display panel 100 further includes a package area 102.
  • the cutting reserve area 11 surrounds the package area 102.
  • a second reflective layer 110 is disposed in the non-display area within the package area 102. As such, the second reflective layer 110 can further disperse heat during laser cutting, and is particularly advantageous for reducing heat entering the display area of the display panel 100 during laser cutting, thereby improving the reliability of the package.
  • first reflective layer 111 and the second reflective layer 110 are disposed in the same layer, which is convenient for simultaneous molding.
  • the first reflective layer 111 is a metal reflective layer or a metal alloy reflective layer, and the reflection effect is good.
  • the second reflective layer 110 is a metal reflective layer or a metal alloy reflective layer.
  • the materials of the first reflective layer 111 and the second reflective layer 110 are the same.
  • the first reflective layer 111 and the second reflective layer 110 are both metal reflective layers.
  • the first reflective layer 111 and/or the second reflective layer 110 are of a multi-layered structure.
  • the first reflective layer 111 and/or the second reflective layer 110 have a three-layer structure.
  • the first reflective layer 111 is the same material as the source/drain of the display region 101 in the display panel 100.
  • the second reflective layer 110 is the same material as the source/drain of the display region 101 in the display panel 100.
  • the first reflective layer 111 and/or the second reflective layer 110 can be simultaneously formed using the same material at the source/drain of the display region 101.
  • first reflective layer 111 and/or the second reflective layer 110 are Ti/Al/Ti laminates, or the first reflective layer 111 and/or the second reflective layer 110 are Mo/Al/Mo laminates.
  • Ti/Al/Ti stack can be obtained by sequentially forming a Ti layer, an Al layer, and a Ti layer in this order.
  • the first reflective layer 111 and/or the second reflective layer 110 are Ti/Al/Ti laminates.
  • the first reflective layer 111 and the second reflective layer 110 are simultaneously formed in the non-display area and the cut-reserved area 11 in the package area 102 when the source/drain of the display area 101 is formed, without adding process to facilitate production.
  • the source/drain located in the outer edge of the display region 101 extends into the non-display area of the package area 102 and the cut reserve area 11 to form the first and/or second reflective layer 110.
  • a source/drain is formed by a process such as evaporation or sputtering, and then the source/drain of the display region 101 is patterned to obtain a desired electrode shape. For example, an etching process is used to remove unnecessary portions of the source/drain.
  • the source/drain is formed in the display region 101, a similar source/drain is formed on the non-display region and the cut-reserved region 11 of the package region 102 to obtain the first reflective layer 111 and The second reflective layer 110.
  • the cutting can be performed along the package boundary of the package area 102 at the time of cutting, thereby forming a plurality of display panels 100.
  • At least a first reflective layer 111 is disposed in the cutting reserved area 11 on one side of the display panel 100.
  • the display panel 100 also includes a binding area 130.
  • the binding area 130 is located on the side of the display panel 100.
  • the cutting reserved area 11 provided with the first reflective layer 111 and the binding area 130 are not located on the same side of the display panel 100. That is, the first reflective layer 111 is disposed in the cut-out area 11 of the unbound region.
  • the display panel 100 may not be provided with the side of the binding area 130, and the cutting reserved area 11 is provided with the first reflective layer 111.
  • the bonding area 130 is a dense wiring area, which is usually a metal wiring part, and the metal wiring part itself can reflect the laser light, and thus the area of the binding area 130 may not be provided with the second reflective layer 110. It can be understood that in other embodiments, the binding region 130 can also be provided with the second reflective layer 110.
  • the pixel defining layer 140 is included in the display area 101.
  • a first bank 161 and a second bank 162 are disposed around the pixel defining layer 140 in the encapsulation area 102.
  • the first bank 161 is located between the second bank 162 and the package boundary of the package area 102.
  • the dam can function to increase the distance of water oxygen permeation and prevent the inkjet printing from forming an organic material layer to diffuse organic materials, thereby improving package reliability.
  • a planarization layer (not shown) may be disposed between the TFT array 120 and the pixel defining layer 140.
  • the display panel 100 also includes a thin film encapsulation structure 150.
  • the thin film encapsulation structure 150 is disposed on the display area 101 and the encapsulation area 102, and the thin film encapsulation structure 150 forms a recess at intervals.
  • the thin film encapsulation structure 150 includes at least two inorganic encapsulation layers 151 disposed in a stacked manner, and an organic encapsulation layer 152 disposed between the adjacent two inorganic encapsulation layers 151.
  • the inorganic encapsulation layer 151 in the thin film encapsulation structure 150 is disposed at the interval between the first bank 161 and the second bank 162 to increase the adhesion of the inorganic encapsulation layer.
  • the thin film encapsulation structure 150 forms a groove at the interval, and can further function to increase the distance of water oxygen permeation, thereby improving package reliability. It will be appreciated that the thin film encapsulation structure 150 is disposed within the package boundaries.
  • the organic encapsulation layer 152 of the thin film encapsulation structure 150 is disposed within the second bank 162. In this way, the problem of package failure caused by the overflow of the organic material of the organic encapsulation layer 152 can be avoided.
  • a third bank 163 surrounding the pixel defining layer 140 is also included in the encapsulation area 102.
  • the third bank 163 is disposed within the second bank 162 and spaced apart from the second bank 162. This further improves package reliability.
  • the present application also provides a display panel 100 of an embodiment formed by cutting the display panel motherboard 10 described above.
  • the display panel 100 includes a display area 101 and a package area 102 surrounding the outer circumference of the display area 101.
  • the package area 102 has a second reflective layer 110 therein, and the second reflective layer 110 is a source/drain.
  • the source/drain at the outer edge of the display region 101 extends into the package region 102 to form the second reflective layer 110.
  • FIG. 3 is a cross-sectional view of the display panel 100 according to an embodiment of the present application.
  • the display panel 100 further includes a substrate 11, a cover 12 disposed opposite the substrate 11, and an encapsulation layer 14 bonding the substrate 11 and the cover.
  • the display panel 100 is used for encapsulating the display device to isolate the display device from the external environment, so that the organic layer material sensitive to moisture and oxygen in the display device can be in a closed loop region to ensure the service life of the display device.
  • the display device is an OLED display device, and the display panel 100 is used to implement packaging of the OLED screen of the mobile phone. It can be understood that in other embodiments, the display device may also be other types of display devices such as an LCD, and the display panel 100 is not limited to a package that can only be applied to a mobile phone OLED screen. In other embodiments, the display panel The 100 can also be used to package and process other electronic product screens such as tablets and notebooks.
  • the display panel 100 includes a substrate 11 , a cover plate 12 , a display device 13 , and an encapsulation layer 14 .
  • the substrate 11 is disposed substantially parallel to the cover plate 12
  • the encapsulation layer 14 is interposed between the substrate 11 and the cover plate 12 .
  • the encapsulation layer 14 forms a sealed space 15 with the substrate 11 and the cover 12, and the display device 13 is disposed on the substrate 11 and accommodated in the sealed space 15, thereby separating the display device 13 from the external environment.
  • the substrate 11 and the cover 12 have a substantially rectangular structure, and the substrate 11 and the cover 12 can be selectively chamfered or rounded, and portions of the substrate 11 and the cover 12 are in contact with the encapsulation layer 14, the substrate 11 and the cover plate.
  • the central portion of the 12 that is not in contact with the encapsulation layer 14 is fitted to the encapsulation layer 14 and encloses a sealed space 15.
  • the first contact film layer (not shown) may be disposed on the surface of the substrate 11 in contact with the encapsulation layer 14.
  • the first contact film layer is used to strengthen the insulating effect between the substrate 11 and the encapsulation layer 14 on the outside water vapor and oxygen.
  • the second contact film layer (not shown) may be disposed on the surface of the cover plate 12 in contact with the encapsulation layer 14.
  • the second contact film layer is used to strengthen the insulation between the cover plate 12 and the encapsulation layer 14 for moisture and oxygen.
  • the second contact film layer forms a water oxygen channel between the encapsulation layer 14 and the encapsulation layer 14 to extend the path of the outside water vapor and oxygen into the confined space 15 through the water oxygen channel, and the cover plate 12 is enhanced by the principle of the labyrinth seal.
  • the first contact film layer may be omitted if the insulating effect of the reinforcing substrate 11 and the encapsulating layer 14 on the external moisture and oxygen is not considered; if the reinforcing cover 12 and the encapsulating layer 14 are not considered to be external moisture and The oxygen barrier effect, the second contact film layer can also be omitted.
  • the substrate 11 and the cover 12 are both made of glass.
  • the encapsulation layer 14 has a substantially rectangular structure and can be selectively chamfered or rounded. One end of the encapsulation layer 14 is connected to the substrate 11, and the other end is connected to the cover 12, and the encapsulation layer 14 is substantially annular.
  • the encapsulation layer 14 is closed by four mutually perpendicular frames, and the encapsulation layer 14 is substantially in a square ring shape. It can be understood that in other embodiments, the encapsulation layer 14 may also adopt a circular ring, an elliptical ring or the like in other forms, as long as the encapsulation layer 14 can be closed end to end to form a closed.
  • the encapsulation layer 14 comprises a glass frit, and the glass frit may be selected from V 2 O 5 , P 2 O 5 , BaO, SiO 2 , B 2 O 3 , Al 2 O 3 , SnO, TeO 2 , MgO, CaO, ZnO, TiO 2 , One or more of WO 3 , Bi 2 O 3 , Fe 2 O 3 , CuO, Sb 2 O 3 , Ru 2 O, Rb 2 O, tin phosphate glass, vanadate glass, and borosilicate.
  • the substrate 11 and the cover 12 are pressed together, so that the encapsulation layer 14 and the substrate 11 and the cover 12 are adhered to each other, and scanned by the laser along the encapsulation layer 14 , and the laser beam passes through the cover 12 to reach the encapsulation layer 14 .
  • the frit in the encapsulation layer 14 absorbs the high energy of the laser beam and melts, so that the encapsulation layer 14 is closely bonded to the substrate 11 and the cap plate 12, thereby realizing a packaging process for the display device.
  • the display device 13 in order to improve the yield of the package, the display device 13 is more effectively protected.
  • the package layer 14 in the display panel 100 is provided with a recess 141, and the recess 141 is disposed along the encapsulation layer 14.
  • the direction is opened on the surface of the encapsulation layer 14, the thickness of the groove 141 is smaller than the thickness of the encapsulation layer 14, and the groove 141 is located below the cutting line 142.
  • the groove 141 is provided with a heat absorbing material for absorbing heat introduced during laser processing.
  • the melting point of the endothermic material is lower than the melting point of the encapsulating layer 14.
  • the heat absorbing material is made of a thermal grease, and the heat absorbing material has a good thermal conductivity when it is made of a thermal grease. It vaporizes from the grease state at a temperature of 230 ° C and carries away the heat introduced by the laser beam processing. It can be understood that in other embodiments, the heat absorbing material may also use other materials than the thermal grease, as long as the heat absorbing material can be vaporized or liquefied at a suitable temperature and take away the heat introduced by the laser beam processing. can.
  • the heat absorbing material is completely filled with the groove 141 to increase the overall heat absorption amount of the heat absorbing material.
  • the heat absorbing material may also be partially filled in the recess 141 to reduce the manufacturing cost of the module package.
  • the cross section of the groove 141 in the direction perpendicular to the cover plate 12 is a curved surface. It can be understood that in other embodiments, the groove 141 can adopt other shapes as long as the groove 141 can accommodate the heat absorbing material.
  • the width of the groove 141 is one-half to one-third of the width of the encapsulation layer 14, and the groove 141 is disposed adjacent to the outer ring of the annular encapsulation layer 14.
  • the outer portion of the encapsulation layer 14 can be better supported, and the outer portion of the encapsulation layer 14 can maintain a better connection strength during cutting, and the outer portion of the encapsulation layer 14 can be prevented from being entirely broken during the cutting process.
  • the high energy laser beam radiates the encapsulation layer 14, and the encapsulation layer 14 is melted under high energy and high temperature laser radiation to achieve adhesion to the substrate 11 and the cover plate 12. Due to the presence of the groove 141, the cutting tool cuts the portion of the encapsulation layer 14 to compress the cutting allowance, and when the narrow bezel design is realized, the groove 141 becomes the remaining path of the tool processing, and the area of the machining section of the tool and the encapsulation layer 14 The reduction also reduces the number of microcracks caused during the cutting of the tool and improves the cutting quality of the encapsulation layer 14.
  • the heat absorbing material accommodated in the groove 141 can absorb the heat of the laser beam, and the heat absorbing material vaporizes under the irradiation of the laser beam, and takes away part of the heat of the laser beam.
  • the temperature of the encapsulation layer 14 at the time of packaging is lowered, which enables the first contact film layer and the second contact film layer in direct contact with the encapsulation layer 14 to have a relatively low temperature when encapsulating the encapsulation layer 14, and can protect the first contact
  • the film layer and the second contact film layer prevent the first contact film layer and the second contact film layer from being damaged by high temperature.
  • the heat absorbing material filled in the groove 141 can also be omitted.
  • FIG. 4 is a schematic flowchart of a packaging method according to an embodiment of the present application, where the packaging method includes:
  • S31 providing a substrate, the substrate dividing the display area 101 and the encapsulation area 102, and coating an endothermic material at an edge of the encapsulation area 102;
  • the display device is disposed on the display area 101 of the substrate, and the substrate and the cover plate are adhered to form a sealed space;
  • the cutting tool can cut the glass glue layer relatively easily, thereby compressing the cutting allowance, and when the narrow frame design is realized, the avoidance space becomes a reserved passage for the cutting tool processing, so that the cutting tool and the cutting tool The area of the processed section of the glass layer is reduced, which reduces the number of microcracks caused by the cutting process and improves the cutting quality of the glass layer.
  • the heat absorbing material Due to the addition of the heat absorbing material, the heat absorbing material is liquefied or vaporized after laser cutting, which can better protect the glass cover plate and the glass substrate, and has a better packaging effect.
  • the present application also provides a display device (not shown) including the display panel 100 described above.
  • the display panel 100 provided by the present application has a groove 141 formed in the encapsulation layer 14, and the cutting tool does not contact the sidewall of the groove 141 when the cutting encapsulation layer 14 is cut, thereby reducing the end face contact area when the cutting tool processes the encapsulation layer 14, thereby Compress the cutting allowance to achieve a narrow bezel design while reducing the crack problem and ensuring the packaging effect and the yield of the package.
  • the present application also provides a display terminal including the above display panel 100.
  • the display terminal can be a device such as a mobile phone, a television or a tablet.

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  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

一种显示面板母板（10），其中该显示面板母板（10）包括多个显示面板（100）及环绕每个所述显示面板（100）的切割预留区（11），至少部分所述切割预留区（11）内设置有第一反射层（111），所述第一反射层（111）与所述显示面板（100）的源/漏极同层。该显示面板母板（10）在切割成显示面板（100）时，第一反射层（111）可反射激光能量起到放大激光能量的作用，因此可以适当降低激光能量，减小激光光斑，从而降低热膨胀导致封装膜层等膜材损伤，致使水汽从显示面板（100）侧边渗透造成封装不良的风险，进而提高了封装可靠性，提高了显示面板（100）的良率及使用寿命。还提供了一种显示面板（100）及其制备方法，以及显示装置。

Description

显示面板母板、显示面板及显示面板制备方法 技术领域
本申请涉及显示技术领域，特别是涉及一种显示面板母板、显示面板及显示面板制备方法。
背景技术
近年来，随着智能终端设备和可穿戴设备的技术发展，对于显示的需求越来越多样化。诸如OLED(Organic Light-Emitting Diode，OLED)有机发光二极管显示器具有自发光性能，相比液晶显示屏省去了较为耗能的背光模组，因此具有更节能的优点。
目前，显示面板的制造均是在母板上进行整体工艺制作后再切割分离，进一步完成后段模组工艺。以柔性显示面板为例，在一张大基板上形成多个柔性显示面板，即得显示面板母板，之后切割形成独立的柔性显示面板。一般地，显示面板母板的切割方式通常为刀轮切割及激光切割。相较于刀轮，激光切割因具有高能量、单向性好、切割效率及精度更高等特点而被广泛应用。
但在激光切割工序中，膜材及基板会受到切割热量影响而发生损伤。具体地，为保证柔性显示基板有效切割，需保证一定的激光切割强度，并预留切割预留区以提供一定的激光辐射范围。若激光切割强度过大，将导致柔性衬底受热产生较大的应力，从而致使柔性衬底上的薄膜晶体管易受损坏。若激光辐射范围过宽，将导致显示区的像素受到激光伤损。如此极易破坏显示面板边缘的元件，使水汽从显示面板侧边渗透，造成封装不良。此外，现有的显示器件通常采用玻璃胶层(Frit)进行封装，现有的显示面板在进行玻璃胶层的切割工艺 时，玻璃胶层的切割端面上容易留下裂纹，微裂纹的扩展容易诱发玻璃胶层的失效，从而造成整个封装过程的失败。
发明内容
基于此，有必要提供一种封装可靠性较高的显示面板母板、显示面板、显示面板制备方法及显示装置。
根据本申请的一方面，提供了一种显示面板母板，包括多个显示面板及环绕每个所述显示面板的切割预留区，其中，至少部分所述切割预留区内设置有第一反射层，所述第一反射层与所述显示面板的源/漏极同层。
上述显示面板母板中，至少部分切割预留区内设置有第一反射层，在切割成显示面板时，第一反射层可反射激光能量，从而起到放大激光能量的作用；在实际操作中，可适当降低激光能量，减小激光光斑，通过第一反射层对激光能量的放大作用而达到切割要求，从而降低热膨胀导致封装膜层等膜材损伤、致使水汽从显示面板侧边渗透造成封装不良的风险，进而提高了封装可靠性，提高了显示面板的良率及使用寿命。
且，该第一反射层与显示面板的薄膜晶体管(Thin-film transistor，TFT)阵列基板中的源/漏极同层设置，可在成型显示区的源/漏极时同步成型，无需增加工艺，便于生产。
在其中一个实施例中，所述切割预留区至少位于所述显示面板的一侧，所述切割预留区内设置有所述第一反射层。
在其中一个实施例中，所述显示面板还包括绑定区，所述绑定区位于所述显示面板的一侧；其中，设置有第一反射层的所述切割预留区与所述绑定区不位于所述显示面板的相同侧。
在其中一个实施例中，所述显示面板未设置所述绑定区的侧面，所述切割预留区内均设置有所述第一反射层。
在其中一个实施例中，所述第一反射层为金属反射层或金属合金反射层。
在其中一个实施例中，所述第一反射层为多层结构。
在其中一个实施例中，所述第一反射层为Ti/Al/Ti叠层或者Mo/Al/Mo叠层。
在其中一个实施例中，所述显示面板还包括封装区，所述切割预留区环绕所述封装区，所述封装区内的非显示区内设置第二反射层。
在其中一个实施例中，所述第一反射层和第二反射层同层设置。
在其中一个实施例中，所述第一反射层和第二反射层均为金属反射层。
在其中一个实施例中，所述显示面板包括薄膜封装结构，所述薄膜封装结构设于显示区及封装区上，所述薄膜封装结构在间隔处形成凹槽。
在其中一个实施例中，所述显示区设有像素限定层，所述封装区内设有围绕所述像素限定层的第一堤坝、第二堤坝，所述薄膜封装结构包括层叠设置的至少两层无机封装层、以及设置在相邻两层无机封装层之间的有机封装层，所述薄膜封装结构中的无机封装层设于所述第一堤坝与第二堤坝上的间隔处。
本申请还提供了一种显示面板，其由上述任一项所述显示面板母板切割形成，所述显示面板包括：显示区；以及围绕所述显示区外周的封装区；其中所述封装区内设置有第二反射层。
在其中一个实施例中，所述显示面板还包括：基板；与所述基板相对设置的盖板；其中所述封装区由封装层构成，所述封装层粘接所述基板和所述盖板；其中所述基板与所述封装层及所述盖板围成放置显示器件的密闭空间，所述封装层上布设有凹槽，所述凹槽开口朝向或者背向所述盖板，所述凹槽内填充固态吸热材料。
在其中一个实施例中，所述凹槽沿所述封装层围设的方向开设于所述封装层的表面。
在其中一个实施例中，所述封装层呈环状，所述凹槽靠近所述封装层外环设置。
在其中一个实施例中，所述凹槽厚度小于所述封装层厚度。
在其中一个实施例中，所述凹槽宽度为所述封装层宽度的1/2-1/3倍。
在其中一个实施例中，所述凹槽沿垂直于盖板方向的截面为弧面。
本申请还提供了一种显示面板的制备方法，所述方法包括：提供一基板，在所述基板划分显示区和封装区；在所述封装区边缘涂布固态吸热材料；在所述吸热材料上涂布玻璃粉并且完全覆盖所述吸热材料；将显示器件设置于基板的显示区上，将基板与盖板贴合形成密闭空间；使用激光沿所述吸热材料涂布区进行切割。
在其中一个实施例中，所述吸热材料在和激光切割后发生液化或者气化。
附图说明
图1为根据本申请的实施例的显示面板母板的正面结构示意图；
图2为图1所示显示面板母板切割后形成的显示面板在封装区的截面剖视图；
图3为根据本申请实施例的显示面板的剖视示意图；
图4为根据本申请实施例的显示面板制造方法的流程示意图。
具体实施方式
为了便于理解本申请，下面将参照相关附图对本申请进行更全面的描述。 附图中给出了本申请的较佳实施例。但是，本申请可以以许多不同的形式来实现，并不限于本文所描述的实施例。相反地，提供这些实施例的目的是使对本申请的公开内容的理解更加透彻全面。
图1示出了本申请一实施例的显示面板母板10，包括多个显示面板100及环绕每个显示面板100的切割预留区11。可理解，多个显示面板100呈阵列分布。
请参阅图1及图2，至少部分切割预留区11内设置有第一反射层111，第一反射层111与显示面板100的源/漏极同层设置。
上述显示面板母板10中，至少部分切割预留区11内设置有第一反射层111，在切割成显示面板100时，第一反射层111可反射激光能量从而起到放大激光能量的作用。因此在实际操作中，可适当降低激光能量，减小激光光斑，通过第一反射层111对激光能量的放大作用达到切割要求，从而降低热膨胀导致封装膜层等膜材损伤、致使水汽从显示面板100侧边渗透造成封装不良的风险，进而提高了封装可靠性，提高了显示面板100的良率及使用寿命。
且，该第一反射层111与显示面板100的薄膜晶体管(Thin-film transistor，TFT)阵列120中的源/漏极同层设置，可在显示区101的源/漏极时同步成型，无需增加工艺，便于生产。
在其中一个实施例中，显示面板100还包括封装区102。切割预留区11环绕封装区102。封装区102内的非显示区内设置第二反射层110。如此，第二反射层110可进一步分散激光切割时的热量，特别有利于减少激光切割时的热量进入显示面板100的显示区，从而提高封装的可靠性。
进一步地，第一反射层111和第二反射层110同层设置，如此便于同步成型。
进一步地，第一反射层111为金属反射层或金属合金反射层，其反射效果 较好。
进一步地，第二反射层110为金属反射层或金属合金反射层。
更进一步地，第一反射层111和第二反射层110的材料相同。优选地，优选第一反射层111和第二反射层110均为金属反射层。
具体地，第一反射层111和/或第二反射层110为多层结构。优选地，第一反射层111和/或第二反射层110为三层结构。
优选地，第一反射层111与显示面板100中显示区101的源/漏极的材料相同。优选地，第二反射层110与显示面板100中显示区101的源/漏极的材料相同。如此在显示区101的源/漏极时可采用相同材料同步成型第一反射层111和/或第二反射层110。
进一步地，第一反射层111和/或第二反射层110为Ti/Al/Ti叠层，或第一反射层111和/或第二反射层110为Mo/Al/Mo叠层。以Ti/Al/Ti叠层为例，Ti/Al/Ti叠层可通过依次连续形成Ti层、Al层及Ti层制得。更进一步地，第一反射层111和/或第二反射层110为Ti/Al/Ti叠层。
具体地，在成型显示区101的源/漏极时于封装区102内的非显示区及切割预留区11同步成型第一反射层111和第二反射层110，无需增加工艺便于生产。
也就是说，显示区101内位于外缘的源/漏极延伸至封装区102的非显示区及切割预留区11内形成第一和/或第二反射层110。通常地，在显示区101内形成TFT阵列120的过程中，采用蒸发或溅射等工艺形成源/漏极，然后对显示区101的源/漏极进行图形化，得到期望的电极形状。例如采用刻蚀工艺去除源/漏极不需要的部分。而在本申请中只需要在显示区101形成源/漏极时，同时对上述封装区102的非显示区及切割预留区11形成类似的源/漏极即可得到第一反射层111和第二反射层110。
可理解，切割时可沿封装区102的封装边界进行切割，从而形成多个显示面板100。
进一步地，至少位于显示面板100的一侧的切割预留区11内设置有第一反射层111。
显示面板100还包括绑定区130。绑定区130位于显示面板100一侧。设置有第一反射层111的切割预留区11与绑定区130不位于显示面板100的相同侧。也就是说，第一反射层111设于无绑定区的切割预留区11。且，显示面板100还可以不设有绑定区130的侧面，切割预留区内11均设置有第一反射层111。
具体地，绑定区130为密集布线区，其通常为金属走线部，金属走线部本身可以对激光起到反射作用，因而该绑定区130的区域可不设置第二反射层110。可理解，在其他实施例中，绑定区130也可设置第二反射层110。
在其中一个实施例中，显示区101内包括像素限定层140。封装区102内围绕像素限定层140设置有第一堤坝161及第二堤坝162。第一堤坝161位于第二堤坝162与封装区102的封装边界之间。该堤坝可起到增加水氧渗透的距离的作用及防止喷墨打印形成有机膜层有机材料扩散的问题，进而提高封装可靠性。可理解，在其他实施例中，TFT阵列120与像素限定层140之间还可设有平坦化层(未图示)。
进一步地，第一堤坝161与第二堤坝162之间具有间隔。显示面板100还包括薄膜封装结构150。薄膜封装结构150设于显示区101及封装区102上，薄膜封装结构150在间隔处形成凹槽。
薄膜封装结构150包括层叠设置的至少两层无机封装层151，以及设置在相邻两层无机封装层151之间的有机封装层152。如此薄膜封装结构150中的无机封装层151设于第一堤坝161与第二堤坝162上的间隔处，可增加无机封装层 的附着力。薄膜封装结构150在间隔处形成凹槽，可进一步可起到增加水氧渗透的距离的作用，进而提高封装可靠性。可理解，薄膜封装结构150设置在封装边界内。
薄膜封装结构150的有机封装层152设置在第二堤坝162以内。如此可避免有机封装层152的有机材料外溢造成的封装失效问题。
封装区102内还包括围绕像素限定层140的第三堤坝163，第三堤坝163设置在第二堤坝162以内，且与第二堤坝162间隔设置。如此进一步提高封装可靠性。
本申请还提供了一实施方式的显示面板100，其由上述显示面板母板10切割形成。
该显示面板100包括显示区101及围绕显示区101外周的封装区102，封装区102内具有第二反射层110，第二反射层110为源/漏极。
进一步地，显示区101内位于外缘的源/漏极延伸至封装区102内形成第二反射层110。
进一步地，请参阅图3，图3为根据本申请实施例的显示面板100的剖视示意图。在该实施例中，显示面板100还包括：基板11、与基板11相对设置的盖板12、以及粘接所述基板11和所述盖板的封装层14。显示面板100用以实现对显示器件的封装，将显示器件与外界环境隔离，从而使得显示器件中对水汽和氧气极为敏感的有机层材料能够处于密闭环境内，保证显示器件的使用寿命。
本实施例中，显示器件为OLED显示器件，显示面板100用以实现手机OLED屏体的封装。可以理解，在其他的实施方式中，显示器件还可以为LCD等其他类型的显示器件，显示面板100也并不限于仅能够适用以手机OLED屏体的封装，在其他的实施方式中，显示面板100还可以用以实现平板电脑、笔 记本等其他电子产品屏体的封装加工。
在本实施例中，显示面板100包括基板11、盖板12、显示器件13及封装层14，基板11与盖板12大致平行设置，封装层14夹设于基板11与盖板12之间，封装层14与基板11及盖板12形成密闭空间15，显示器件13设置于基板11上并容置于该密闭空间15内，从而实现将显示器件13与外界环境相互隔离。
基板11及盖板12大致呈矩形结构，基板11及盖板12可以选择性的进行倒角处理或者圆角处理，基板11及盖板12中的部分与封装层14接触，基板11及盖板12中未与封装层14接触的中心部分与封装层14配合并围成密闭空间15。
基板11与封装层14接触的表面还可以设置第一接触膜层(未图示)，该第一接触膜层用以强化基板11与封装层14之间对外界水汽及氧气的隔绝效果。
盖板12与封装层14接触的表面还可以设置第二接触膜层(未图示)，该第二接触膜层用以强化盖板12与封装层14之间对外界水汽及氧气的隔绝效果，第二接触膜层通过与封装层14之间形成蜿蜒的水氧通道，从而延长外界水汽及氧气通过水氧通道进入密闭空间15内的路径，利用迷宫密封的原理增强了盖板12及封装层14对外界水汽及氧气的隔绝效果。
在其他的实施方式中，若不考虑增强基板11与封装层14对外界水汽及氧气的隔绝效果，第一接触膜层也可以省略；若不考虑增强盖板12与封装层14对外界水汽及氧气的隔绝效果，第二接触膜层也可以省略。
本实施例中，基板11与盖板12均为玻璃材质。
封装层14大致呈矩形结构，并且可以选择性的进行倒角处理或者圆角处理，封装层14的一端与基板11连接，另一端与盖板12连接，封装层14大致呈环状。
本实施方式中，封装层14由四个相互垂直的边框闭式围成，封装层14大 致呈方形环状。可以理解，在其他的实施方式中，封装层14还可以采用圆形环、椭圆形环等其他形式的环状，只要封装层14能够首尾相接形成封闭即可。
封装层14包括玻璃料，玻璃料可以选用V 2O 5、P 2O 5、BaO、SiO 2、B 2O 3、Al 2O 3、SnO、TeO 2、MgO、CaO、ZnO、TiO 2、WO 3、Bi 2O 3、Fe 2O 3、CuO、Sb 2O 3、Ru 2O、Rb 2O、磷酸锡玻璃、钒酸盐玻璃和硼硅酸盐中的一种或者一种以上。
在进行封装时，基板11与盖板12压合，使得封装层14与基板11及盖板12相互粘合，利用激光器沿封装层14扫描，激光束穿过盖板12达到封装层14处，封装层14中的玻璃料吸收激光束的高能量并发生熔融，从而使得封装层14与基板11及盖板12紧密粘结，实现对显示器件的封装过程。
根据本申请实施例提供的显示面板100，为了提高封装的良品率，更加有效保护显示器件13，显示面板100中的封装层14上开设有凹槽141，凹槽141沿封装层14围设的方向开设于封装层14的表面，凹槽141的厚度小于封装层14的厚度，凹槽141位于切割线142的下方。凹槽141内容置有吸热材料，该吸热材料用以吸收激光加工过程中引入的热量。
本实施方式中，该吸热材料的熔点低于封装层14的熔点。优选地，吸热材料采用导热硅脂，当吸热材料采用导热硅脂时具有较好的导热性，其在230℃温度时从脂膏状态汽化并带走激光束加工所引入的热量。可以理解，在其他的实施方式中，吸热材料还可以采用导热硅脂之外的其他材料，只要该吸热材料能够在适宜的温度下汽化或者液化并带走激光束加工所引入的热量即可。
本实施方式中，吸热材料完全填充满凹槽141，以提高吸热材料的总体吸热量。在其他的实施方式中，吸热材料也可以部分填充于凹槽141内，以降低模组封装的制造成本。
本实施方式中，凹槽141沿垂直于盖板12方向的截面为弧面。可以理解， 在其他的实施方式中，凹槽141还可以采用其他的形状，只要该凹槽141能够实现对吸热材料的容置即可。
优选地，凹槽141的宽度为封装层14宽度的二分之一至三分之一，凹槽141靠近环状封装层14的外环设置。
此时封装层14的外侧部分能够较好的得到支撑，封装层14的外侧部分能够在切割时保持较佳的连接强度，可以避免封装层14的外侧部分在切割过程中整体断裂。
在进行封装时，高能激光束辐射封装层14，封装层14在高能高温的激光辐射下发生熔融，从而实现对基板11及盖板12的粘结。由于凹槽141的存在，切割刀具在切割封装层14的部分，以压缩切割余量，实现窄边框设计时，凹槽141成为刀具加工的余留通道，刀具与封装层14的加工断面的面积减少，也就减小了刀具切割过程中引起微裂纹的数量，提高了封装层14的切割质量。
当凹槽141内容置有吸热材料时，容置于凹槽141内的吸热材料能够吸收激光束的热量，吸热材料在激光束的照射下汽化，并带走激光束的部分热量，降低封装层14的在封装时的温度，这使得与封装层14直接接触的第一接触膜层与第二接触膜层能够在封装层14封装时具有相对较低的温度，能够保护第一接触膜层与第二接触膜层，避免第一接触膜层与第二接触膜层受到高温损伤。
如果不考虑对第一接触膜层与第二接触膜层的保护，凹槽141内填充的吸热材料也可以省略。
本申请还提供一种封装方法，该封装方法在压缩切割余量，实现窄边框设计的同时，还能够保证封装效果及封装良品率。请参阅图4，图4为本申请实施例中封装方法的流程示意图，该封装方法包括：
S31：提供一基板，所述基板划分显示区101和封装区102，在所述封装区 102边缘涂布吸热材料；
S32：在所述吸热材料上涂布玻璃粉并且完全覆盖所述吸热材料；
S33：将显示器件设置于基板的显示区101上，将基板与盖板贴合形成密闭空间；
S34：使用激光沿所述吸热材料涂布区进行切割。
由于在玻璃胶层中开设避让空间，切割刀具可以相对较为轻易的一次切断玻璃胶层，从而压缩切割余量，实现窄边框设计时，避让空间成为切割刀具加工的预留通道，使得切割刀具与玻璃胶层的加工断面的面积减少，也就减小了刀具切割过程中引起微裂纹的数量，提高了玻璃胶层的切割质量。
由于加入了吸热材料，吸热材料在和激光切割后发生液化或者气化，能够更好的保护玻璃盖板与玻璃基板，具有更加良好的封装效果。
本申请还提供一种显示装置(图未示)，该显示装置包括上述的显示面板100。
本申请提供的显示面板100通过在封装层14上开设凹槽141，切割刀具切割封装层14时与凹槽141的侧壁不接触，从而减少切割刀具加工封装层14时的端面接触面积，从而压缩切割余量，实现窄边框设计的同时，减少裂纹问题，保证封装效果及封装的良品率。
本申请还提供了一种显示终端，包含上述显示面板100。
该显示终端可为手机、电视或平板电脑等设备。
以上所述实施例的各技术特征可以进行任意的组合，为使描述简洁，未对上述实施例中的各个技术特征所有可能的组合都进行描述，然而，只要这些技术特征的组合不存在矛盾，都应当认为是本说明书记载的范围。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细， 但并不能因此而理解为对本申请保护范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请的保护范围应以所附权利要求为准。

Claims (20)

  1. 一种显示面板母板，包括：
    多个显示面板；以及
    环绕每个所述显示面板的切割预留区；
    其中，至少部分所述切割预留区内设置有第一反射层，所述第一反射层与所述显示面板的源/漏极同层。
  2. 如权利要求1所述的显示面板母板，其中，所述切割预留区至少位于所述显示面板的一侧，所述切割预留区内设置有所述第一反射层。
  3. 如权利要求1所述的显示面板母板，其中，所述显示面板包括绑定区，所述绑定区位于所述显示面板的一侧；其中，设置有第一反射层的所述切割预留区与所述绑定区不位于所述显示面板的相同侧。
  4. 如权利要求3所述的显示面板母板，其中，所述显示面板未设置所述绑定区的侧面，所述切割预留区内均设置有所述第一反射层。
  5. 如权利要求1所述的显示面板母板，其中，所述第一反射层为金属反射层或金属合金反射层。
  6. 如权利要求1所述的显示面板母板，其中，所述第一反射层为多层结构，所述第一反射层为Ti/Al/Ti叠层或者Mo/Al/Mo叠层。
  7. 如权利要求1所述的显示面板母板，其中，所述显示面板还包括封装区，所述切割预留区环绕所述封装区，所述封装区内的非显示区内设置有第二反射层。
  8. 如权利要求7所述的显示面板母板，其中，所述第一反射层和第二反射层同层设置。
  9. 如权利要求8要求所述的显示面板母板，其中，所述第一反射层和第二 反射层均为金属反射层。
  10. 如权利要求1所述的显示面板母板，其中，所述显示面板包括薄膜封装结构，所述薄膜封装结构设于显示区及封装区上，所述薄膜封装结构在间隔处形成凹槽。
  11. 如权利要求10所述的显示面板母板，其中，所述显示区设有像素限定层，所述封装区内设有围绕所述像素限定层的第一堤坝、第二堤坝，所述薄膜封装结构包括层叠设置的至少两层无机封装层、以及设置在相邻两层无机封装层之间的有机封装层，所述薄膜封装结构中的无机封装层设于所述第一堤坝与第二堤坝上的间隔处。
  12. 一种显示面板，其由权利要求1所述的显示面板母板切割形成，所述显示面板包括：
    显示区；以及
    围绕所述显示区外周的封装区；
    其中所述封装区内设置有第二反射层。
  13. 如权利要求12所述的显示面板，还包括：
    基板；
    与所述基板相对设置的盖板；其中
    所述封装区由封装层形成，所述封装层粘接所述基板和所述盖板；
    所述基板与所述封装层及所述盖板围成放置显示器件的密闭空间，所述封装层上布设有凹槽，所述凹槽开口朝向或者背向所述盖板，所述凹槽用于填充吸热材料。
  14. 如权利要求13所述的显示面板，其中，所述凹槽沿所述封装层围设的方向开设于所述封装层的表面。
  15. 如权利要求13所述的显示面板，其中，所述封装层呈环状，所述凹槽靠近所述封装层外环设置。
  16. 如权利要求13所述的显示面板，其中，所述凹槽厚度小于所述封装层厚度。
  17. 如权利要求13所述的显示面板，其中，所述凹槽宽度为所述封装层宽度的1/2-1/3倍。
  18. 如权利要求13所述的显示面板，其中，所述凹槽沿垂直于盖板方向的截面为弧面。
  19. 一种显示面板的制备方法，包括：
    提供一基板，在所述基板划分显示区和封装区；
    在所述封装区边缘涂布固态吸热材料；
    在所述吸热材料上涂布玻璃粉并且完全覆盖所述吸热材料；
    将显示器件设置于基板的显示区上，将基板与盖板贴合形成密闭空间；
    使用激光沿所述吸热材料涂布区进行切割。
  20. 如权利要求19所述的显示面板的制备方法，其中，所述吸热材料在和激光切割后发生液化或者气化。
PCT/CN2019/071468 2018-05-11 2019-01-11 显示面板母板、显示面板及显示面板制备方法 Ceased WO2019214285A1 (zh)

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