WO2019214229A1 - 一种单悬梁气体传感器、传感器阵列及传感器的制备方法 - Google Patents

一种单悬梁气体传感器、传感器阵列及传感器的制备方法 Download PDF

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WO2019214229A1
WO2019214229A1 PCT/CN2018/120549 CN2018120549W WO2019214229A1 WO 2019214229 A1 WO2019214229 A1 WO 2019214229A1 CN 2018120549 W CN2018120549 W CN 2018120549W WO 2019214229 A1 WO2019214229 A1 WO 2019214229A1
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cantilever
base
window
film
gas sensor
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PCT/CN2018/120549
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English (en)
French (fr)
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许磊
谢东成
彭书峰
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合肥微纳传感技术有限公司
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Priority to US16/482,275 priority Critical patent/US10914700B2/en
Priority to JP2019537366A priority patent/JP6804173B2/ja
Priority to EP18915794.4A priority patent/EP3608661A4/en
Priority to KR1020197024227A priority patent/KR102339612B1/ko
Publication of WO2019214229A1 publication Critical patent/WO2019214229A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
    • H10N30/304—Beam type
    • H10N30/306—Cantilevers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G01N27/128—Microapparatus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
    • G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
    • G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
    • G01N27/16—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/80—Constructional details
    • H10N30/85—Piezoelectric or electrostrictive active materials
    • H10N30/853—Ceramic compositions
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A50/00—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE in human health protection, e.g. against extreme weather
    • Y02A50/20—Air quality improvement or preservation, e.g. vehicle emission control or emission reduction by using catalytic converters

Definitions

  • the invention belongs to the technical field of microelectronic mechanical systems and gas detection, and particularly relates to a method for preparing a single cantilever gas sensor, a sensor array and a sensor.
  • MEMS microelectromechanical systems
  • MOS metal oxide semiconductor
  • MEMS MOS gas sensors are mainly based on the research of suspension-type micro-heaters.
  • the sensors of this structure have low power consumption, generally as low as 20 mW, as provided by the utility model patent No. 201520759054.6.
  • a resistive gas sensor having a four-supported cantilever four-layer structure having a silicon substrate frame, a heating film layer, a heating electrode layer and a sensitive film layer arranged in this order from bottom to top, wherein the heating film layer comprises a heating film region, The heated film zone is connected to the silicon substrate frame by four cantilevers.
  • Another example is a utility model patent with the patent number CN201520759055.0, which provides a resistive gas sensor with two supporting cantilever four-layer structure, the sensor also includes a silicon substrate frame, a heating film layer and a heating layer arranged from bottom to top. An electrode layer and a sensitive film layer, wherein the heated film layer comprises a heated film region connected to the silicon substrate frame by two cantilever beams.
  • These multi-cantilever gas sensors have low power consumption, but with the rapid development of mobile and IoT applications, they are no longer sufficient. At the same time, when the multi-cantilever gas sensor is prepared, there are problems of complicated process, difficult positioning, and low efficiency.
  • the technical problem to be solved by the present invention is how to further reduce the power consumption of the cantilever type gas sensor.
  • a single cantilever gas sensor has a base structure and a cantilever structure, and includes the following portions that are sequentially stacked:
  • a support film comprising a first base and a first cantilever, the first cantilever being connected to one side of the first base;
  • a heating resistor comprising a second base and a second cantilever, the second cantilever being connected to one side of the second base;
  • the second base is provided with a first window on a side of the second cantilever, the second cantilever a second window extending along the length of the second cantilever, the second window is in communication with the first window;
  • the second base is respectively disposed at a position on both sides of the second window;
  • the isolation film includes a third base and a third cantilever, the third cantilever is connected to one side of the third base; and the third base is provided with a through hole at a position corresponding to the first lead, the first lead Exposed to the outside through the corresponding through hole; the thickness of the isolation film is greater than the thickness of the heating resistor;
  • the detecting electrode includes a fourth base and a fourth cantilever, wherein the fourth cantilever is connected to one side of the fourth base; the fourth base has a third window on a side facing away from the fourth cantilever, and the fourth cantilever is provided along the first
  • the fourth cantilever extends in the longitudinal direction, and the fourth window is divided into a fourth window, the fourth window is connected to the third window, and the detecting electrode is divided into two parts; the detecting electrode does not cover the through hole; the detecting a second lead is disposed at a position of the electrode on both sides of the third window;
  • the silicon substrate, the first base portion, the second base portion, the third base portion and the fourth base portion are correspondingly disposed to form the base structure;
  • the first cantilever, the second cantilever, the third cantilever and the fourth cantilever are correspondingly disposed to form a body Said cantilever structure;
  • a gas sensing material is disposed on one end of the fourth cantilever away from the base structure.
  • the first cantilever, the second cantilever, the third cantilever and the fourth cantilever have a rectangular shape.
  • the first cantilever, the second cantilever, the third cantilever, and the fourth cantilever are all in the shape of an isosceles trapezoid, and in a direction away from the base structure, The widths of the first cantilever, the second cantilever, the third cantilever, and the fourth cantilever are gradually increased.
  • the first cantilever is provided with a first hole extending along the longitudinal direction of the first cantilever.
  • the third cantilever is provided with a second hole, and the second hole extends along the length direction of the third cantilever and is disposed corresponding to the first hole.
  • the silicon substrate, the first base portion, the second base portion, the third base portion and the fourth base portion are all rectangular; the fourth base portion is provided with a fourth cantilever
  • the length of the side of the side is shorter than the length of the side of the first window away from the second cantilever; or the length of the side of the third window away from the side of the fourth cantilever is longer than the length of the side of the second base provided with the second cantilever.
  • the support film is a composite film formed by a single silicon oxide layer and a single silicon nitride layer, and the silicon oxide layer and the silicon nitride layer are sequentially disposed on the silicon liner.
  • the thickness of the silicon nitride layer is greater than the thickness of the silicon oxide layer;
  • the isolation film is a silicon oxide film or a silicon nitride film.
  • the present invention also provides a sensor array that is comprised of a plurality of the above-described single cantilever gas sensor arrays.
  • the invention provides a method for preparing a sensor for preparing the above single suspension beam gas sensor, comprising the following steps:
  • release film firstly, the exposed support film is completely etched by reactive ion etching or ion beam etching to expose the silicon substrate to form a film release window, and then anisotropic wet method using tetramethylammonium hydroxide or potassium hydroxide. Corrosion liquid, or an isotropic wet etching solution composed of hydrofluoric acid, nitric acid and water, or XeF 2 isotropic dry etching gas to hollow out the silicon substrate under the support film to release the film structure;
  • the heating resistor in the step (3) is a platinum resistor, and the thickness is The thickness of the separator in the step (4) is
  • the detecting electrode is a platinum electrode or a gold electrode, and the thickness thereof is
  • the technical scheme of the invention adopts a single cantilever structure, and the effective area is arranged at the end of the cantilever beam, and the power consumption of the sensor is reduced to 1 milliwatt by reducing the effective area area and reducing the number of the cantilever;
  • the single cantilever type sensor has a smaller size, higher integration, and an integration degree that is an order of magnitude higher than that of the existing multi-cantilever structure;
  • the preparation method of the single cantilever gas sensor proposed by the invention is simple in process, easy to locate, effectively improves production efficiency, and is also easier to prepare a gas sensing material having a composite structure of temperament materials.
  • FIG. 1 is a schematic structural view of a single cantilever beam gas sensor according to an embodiment of the present invention
  • Figure 2 is a schematic exploded view of Figure 1;
  • FIG. 3 is a schematic exploded view of another single cantilever gas sensor according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of a sensor array according to an embodiment of the present invention.
  • the present invention provides a single cantilever gas sensor comprising a silicon substrate 1, a support film 2, a heating resistor 3, a separator 4, a detecting electrode 5, and a gas sensing material 6.
  • the sensor has a base structure and a cantilever structure.
  • the base structure has a rectangular shape
  • the cantilever structure is disposed at a middle portion of a long side of the base structure to form a "T" type single cantilever structure.
  • the silicon substrate 1, the support film 2, the heating resistor 3, the isolation film 4, and the detecting electrode 5 are stacked in this order from bottom to top, and the specific structure thereof is as follows:
  • the upper and lower end faces of the silicon substrate 1 have a rectangular shape.
  • the support film 2 is used to support the entire cantilever structure. It comprises a first base portion 21 having a rectangular shape, and a first side of a long side of the first base portion 21 is provided with a first cantilever 22 extending outward.
  • the heating resistor 3 is constructed of a metal or semiconductor material to provide the required operating temperature for sensor operation.
  • the heating resistor 3 includes a second base portion 31 having a rectangular shape.
  • the second base portion 31 is provided with a second cantilever 32 at a central portion of the long side, and a first window 33 is opened on a side of the second base portion 31 opposite to the second cantilever 32.
  • the second cantilever 32 is open with a second window 34 extending along the length of the second cantilever 32, and the second window 34 is in communication with the first window 31.
  • the heating resistor 3 is provided with two first leads (not shown), and the two first leads are respectively disposed on the side of the second base 31 facing away from the second cantilever 32, and are located at the first window 33 On the side.
  • the isolation film 4 is made of an insulating medium such as silicon nitride or silicon oxide for electrically isolating the heating resistor 3 and the detecting electrode 5.
  • the third base portion 41 has a rectangular base portion 41.
  • the third base portion 41 is respectively provided with a through hole 44 at a position corresponding to the first lead wire.
  • the first lead wire is exposed through the corresponding through hole 44 and is exposed;
  • a third cantilever 42 is disposed at a middle portion of a long side of the base portion 41; and a thickness of the separation film 4 is greater than a thickness of the heating resistor 3;
  • the detecting electrode 5 is generally a noble metal material electrode such as metal platinum or gold.
  • the detecting electrode 5 includes a fourth base portion 51 having a rectangular shape, and a fourth cantilever 52 is disposed in a middle portion of the long side of the fourth base portion 51, and a third window 53 is defined on a side of the fourth base portion 51 opposite to the fourth cantilever 52.
  • the fourth cantilever 52 is open with a fourth window 54 extending along the length of the fourth cantilever 52 and dividing the fourth cantilever 52.
  • the fourth window 54 is in communication with the third window 53.
  • the detecting electrode 5 is provided with two second leads (not shown), and the two second leads are respectively disposed on the side of the fourth base 51 facing away from the third window 53 and located at the third window 53. On both sides. It should be noted that the fourth base portion 51 cannot block the transmission hole 44.
  • the silicon substrate 1, the first base portion 21, the second base portion 31, the third base portion 41, and the fourth base portion 51 are correspondingly disposed to form a base structure; the first cantilever 22, the second cantilever 32, the third cantilever 42 and the fourth cantilever 52 correspondingly set to form a cantilever structure;
  • the gas sensing material 6 is composed of a metal oxide semiconductor material at a nanometer scale, such as tin dioxide, zinc oxide or other oxides.
  • the gas sensing material 6 is disposed on the end of the fourth cantilever 52 away from the base structure such that the gas sensing material 6 is electrically connected to the detecting electrode 5.
  • the gas sensitive material 6 adsorbs a specific gas molecule, its resistivity changes, thereby achieving the purpose of detecting the gas.
  • the core portion of the gas sensor is a cantilever structure for loading the active area of the gas sensitive material only at the end of the cantilever structure away from the base mechanism.
  • the heat loss caused by heat convection and heat radiation is reduced by reducing the area of the effective area, and on the other hand, the cantilever structure is thin and long, and the heat loss during heat conduction can be greatly reduced, so that the sensor has extremely low power consumption. .
  • the base structure is rectangular and the cantilever structure is disposed at the middle of the long side of the rectangular base structure, but this is not a strict regulation.
  • the basic structure of the base structure And the setting position of the cantilever structure is set as needed.
  • the first cantilever 22, the second cantilever 32, the third cantilever 42 and the fourth cantilever 52 have a rectangular outer shape.
  • the first cantilever 22, the second cantilever 32, the third cantilever 42 and the fourth cantilever 52 have an isosceles trapezoidal shape and are away from the base structure.
  • the widths of the first cantilever 22, the second cantilever 32, the third cantilever 42 and the fourth cantilever 52 are gradually increased.
  • the first cantilever 22 is provided with a first hole 23 extending in the opposite direction along the length of the first cantilever 22; the third cantilever 42 is provided with a second hole 43 extending along the longitudinal direction of the third cantilever 42.
  • a hole 23 is provided corresponding to the second hole 43. The heat loss during heat conduction is further reduced by providing the elongated first hole 23 and the second hole 43.
  • the length of the long side of the fourth base 51 is shorter than the length of the side of the first window 33 away from the second cantilever 32.
  • the length of the side of the third window 53 facing away from the third cantilever 52 is greater than the length of the long side of the second base 21.
  • the support film 2 is a composite film formed by a single silicon oxide layer and a single silicon nitride layer.
  • the silicon oxide layer and the silicon nitride layer are sequentially disposed on the silicon substrate 1, and the thickness of the silicon nitride layer is larger than that of the silicon oxide layer.
  • the separator 4 is a silicon oxide film or a silicon nitride film.
  • the first window 33 may be a symmetrical structure, and the heating resistor 3 is formed into a symmetrical structure by providing the first window 33 and the second window 34; the third window 53 is a symmetrical structure, and passes through the third window 53 and the fourth The window 54 divides the detecting electrode 5 into two parts which are symmetrical.
  • the first window 33 and the third window 53 may also have an asymmetrical structure, and the heating resistor 3 and the detecting electrode 5 are also asymmetric structures.
  • the single cantilever sensor provided in this embodiment is easy to realize integration of a plurality of sensors to form a sensor array due to its unique structure.
  • the embodiment further provides a sensor array which is formed by tiling the above-mentioned single cantilever sensor, wherein the cantilever structures of the respective sensors are located on the same side of the base structure.
  • the cantilever structure of each sensor can also be distributed on both sides of the base structure or in other arrangements as needed.
  • the preparation method of the single cantilever gas sensor described in this embodiment is more convenient than the conventional multi-cantilever sensor preparation method, and has the characteristics of simple positioning and simple process. The details will be described below by way of specific examples.
  • a method for preparing a single cantilever gas sensor comprises the following steps:
  • a detecting electrode 5 made of platinum is formed by a lift-off process, and the thickness is
  • a method for preparing a single cantilever gas sensor comprises the following steps:
  • the resistivity is 3-8 ⁇ cm
  • the thickness of the silicon wafer is 350 ⁇ 10 ⁇ m
  • the angular error of the trimming is ⁇ 1%
  • a detecting electrode 5 made of platinum is formed by a lift-off process, and the thickness is
  • a method for preparing a single cantilever gas sensor comprises the following steps:
  • the resistivity is 3-8 ⁇ cm
  • the thickness of the silicon wafer is 350 ⁇ 10 ⁇ m
  • the angular error of the trimming is ⁇ 1%
  • a detecting electrode 5 made of platinum is formed by a lift-off process, and the thickness is
  • the method for preparing the single cantilever gas sensor array into a single cantilever gas sensor array is basically the same as the preparation process of the single cantilever gas sensor described above, and only needs to be in step (6), by setting etching conditions, so that a plurality of substrates are formed after releasing the film.
  • the structure is sequentially connected, and each of the base structures has a sensor array with a cantilever structure; then, differently formulated tin dioxide gas sensing materials are respectively taken at the ends of each of the cantilever structures to form a single cantilever gas sensor array.

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Abstract

一种单悬梁气体传感器、传感器阵列及传感器的制备方法，其中单悬梁气体传感器包括依次层叠设置的硅衬底（1）、支撑膜（2）、加热电阻（3）、隔离膜（4）和检测电极（5），气体传感器呈"T"型，具有基体结构和悬臂结构，在悬臂结构的端部上设有气敏材料（6），气体传感器的制备方法包括选择硅衬底（1）；制备支撑膜（2）；制备加热电阻（3）；制备隔离膜（4）；制备检测电极（5）；释放薄膜；气敏材料（6）加载。单悬梁气体传感器功耗低、尺寸小、集成度高，生产工艺简单，易于定位，有效提高了生产效率。

Description

一种单悬梁气体传感器、传感器阵列及传感器的制备方法 技术领域
本发明属于微电子机械系统和气体检测技术领域，具体涉及一种单悬梁气体传感器、传感器阵列及传感器的制备方法。
背景技术
基于微电子机械系统(MEMS)技术的气体传感器，由于其小尺寸、低功耗、高灵敏度和快速响应等特点，逐步显现出巨大的应用潜力，将有望取代基于传统技术的气体传感器，在物联网、移动端和人工智能等领域广泛应用。而在MEMS气体传感器中，又因采用金属氧化物半导体(MOS)材料的传感器具有广泛的检测范围，在未来的大规模应用中具有更为广阔的市场空间。
目前MEMS MOS气体传感器中，主要以基于悬膜式微型加热器的研究居多，该结构的传感器具有较低的功耗，一般可低至20毫瓦，如专利号为201520759054.6的实用新型专利提供了一种具有四支撑悬梁四层结构的电阻式气体传感器，其具有自下而上依次设置的硅衬底框架、加热膜层、加热电极层和敏感膜层，其中加热膜层包括加热膜区，该加热膜区通过四根悬梁与硅衬底框架连接。又如专利号为CN201520759055.0的实用新型专利提供了一种具有两支撑悬梁四层结构的电阻式气体传感器，该传感器也包括自下而上依次设置的硅衬底框架、加热膜层、加热电极层和敏感膜层，其中加热膜层包括加热膜区，该加热膜区通过两根悬梁与硅衬底框架连接。这些多悬梁式气体传感器功耗虽然较低，但随着移动端和物联网应用的高速发展，其已不能满足需要。同时多悬梁式气体传感器在制备时，存在工艺复杂、定位困难、效率低下的问题。
发明内容
本发明所要解决的技术问题在于：如何进一步降低悬梁式气体传感器的功耗。
本发明采用以下技术方案解决上述技术问题：
一种单悬梁气体传感器，具有基体结构和悬梁结构，其包括依次层叠设置的如下部分：
硅衬底；
支撑膜，包括第一基部和第一悬臂，所述第一悬臂与第一基部的一侧连接；
加热电阻，包括第二基部和第二悬臂，所述第二悬臂与第二基部的一侧连接；第二基部相对于第二悬臂的一侧开设有第一窗口，所述第二悬臂上设有沿第二悬臂长度方向延伸的第二窗口，所述第二窗口与第一窗口连通；第二基部位于第二窗口两侧的位置上分别设有第一引线；
隔离膜，包括第三基部和第三悬臂，所述第三悬臂与第三基部的一侧连接；所述第三基部上对应于第一引线的位置设有透过孔，所述第一引线穿过相应透过孔暴露在外；所述隔离膜的厚度大于加热电阻的厚度；
检测电极，包括第四基部和第四悬臂，所述第四悬臂与第四基部的一侧连接；第四基部背离第四悬臂的一侧设有第三窗口，第四悬臂上设有沿第四悬臂长度方向延伸，并将第四悬臂分割的第四窗口，所述第四窗口与第三窗口连通，并将检测电极分割为两部分；检测电极不覆盖所述透过孔；所述检测电极位于第三窗口两侧的位置上设有第二引线；
所述硅衬底、第一基部、第二基部、第三基部和第四基部对应设置形成所述基体结构；所述第一悬臂、第二悬臂、第三悬臂和第四悬臂对应设置形成所述悬梁结构；
所述第四悬臂远离基体结构的一端上设有气敏材料。
优选地，本发明所述的一种单悬梁气体传感器，所述第一悬臂、第二悬臂、第三悬臂及第四悬臂的外形均呈矩形。
优选地，本发明所述的一种单悬梁气体传感器，所述第一悬臂、第二悬臂、第三悬臂及第四悬臂的外形均呈等腰梯形，且沿远离基体结构的方向，所述第一悬臂、第二悬臂、第三悬臂及第四悬臂的宽度均逐渐增大。
优选地，本发明所述的一种单悬梁气体传感器，所述第一悬臂上设有沿第一悬臂长度方向延伸的第一孔。
优选地，本发明所述的一种单悬梁气体传感器，所述第三悬臂上设有第二孔，所述第二孔沿第三悬臂的长度方向延伸，并与第一孔对应设置。
优选地，本发明所述的一种单悬梁气体传感器，所述硅衬底、第一基部、第二基部、第三基部及第四基部均为矩形；所述第四基部设有第四悬臂的侧边的长度短于第一窗口远离第二悬臂的侧边的长度；或第三窗口远离第四悬臂的侧边的长度长于第二基部设有第二悬臂的侧边的长度。
优选地，本发明所述的一种单悬梁气体传感器，所述支撑膜为单层氧化硅层与单层氮化硅层形成的复合膜，氧化硅层与氮化硅层依次设置在硅衬底上，且氮化硅层的厚度大于氧化硅层的厚度；所述隔离膜为氧化硅膜或氮化硅膜。
本发明还提供了一种传感器阵列，其由多个上述的单悬梁气体传感器阵列组成。
本发明提供了一种传感器的制备方法，其用以制备上述的一种单悬梁气体传感器，包括以下步骤：
(1)选择硅衬底：当释放薄膜采用各向同性的干法刻蚀或湿法腐蚀时，对 硅衬底的金相无要求；当释放薄膜采用各向异性湿法腐蚀时，选择<100>晶向的硅片；
(2)制作支撑膜：在硅衬底上采用热氧化和低压化学气相沉积法制备；
(3)制作加热电阻：采用剥离工艺制备；
(4)制作隔离膜：先采用等离子增强化学气相沉积制备，再利用反应离子刻蚀或离子束刻蚀该隔离膜，形成透过孔露出加热电阻；
(5)制作检测电极：采用剥离工艺制备；
(6)释放薄膜：首先利用反应离子刻蚀或离子束刻蚀彻底刻蚀暴露支撑膜，露出硅衬底形成薄膜释放窗口，然后采用四甲基氢氧化铵或氢氧化钾各向异性湿法腐蚀液，或采用由氢氟酸、硝酸和水组成的各向同性湿法腐蚀液，或XeF 2各向同性干法腐蚀气体来掏空支撑膜下面的硅衬底即可释放出薄膜结构；
(7)气敏材料的加载：在所述悬梁结构的端部沾取气敏材料后高温烧结完成气敏材料的加载。
优选地，本发明所述的一种传感器的制备方法，所述步骤(3)中加热电阻为铂电阻，厚度为
Figure PCTCN2018120549-appb-000001
所述步骤(4)中隔离膜的厚度为
Figure PCTCN2018120549-appb-000002
所述步骤(6)中检测电极为铂电极或金电极，其厚度为
Figure PCTCN2018120549-appb-000003
本发明技术有益效果：
本发明技术方案采用单悬梁式结构，将有效区设置在悬梁的端部，通过减小有效区面积和降低悬梁数量使得传感器的功耗降至1毫瓦；
单悬梁式的传感器尺寸更小、集成度更高，集成度较现有多悬梁式结构提高一个数量级；
本发明提出的单悬梁气体传感器的制备方法工艺简单、易于定位，有效提高 了生产效率，同时也更易于制备具有气质材料的复合结构的气敏材料。
附图说明
图1为本发明实施例所述一种单悬梁气体传感器的结构示意图；
图2为图1的爆炸示意图；
图3为本发明实施例所述的另一种单悬梁气体传感器的爆炸示意图；
图4为本发明实施例所述的一种传感器阵列的结构示意图。
具体实施方式
为便于本领域技术人员理解本发明技术方案，现结合说明书附图对本发明技术方案做进一步的说明。
参阅图1及图2，本发明提供的一种单悬梁气体传感器，包括硅衬底1、支撑膜2、加热电阻3、隔离膜4、检测电极5和气敏材料6。
该传感器具有基体结构和悬梁结构，一般情况下，所述基体结构呈矩形，所述悬梁结构设置在基体结构一长边的中部，从而形成“T”型单悬梁式结构。所述硅衬底1、支撑膜2、加热电阻3、隔离膜4及检测电极5自下而上依次层叠设置，其具体结构如下：
所述硅衬底1的上、下端面呈矩形。
所述支撑膜2用以对整个悬梁结构起支撑作用。其包括呈矩形的第一基部21，所述第一基部21的一长边中部设有向外延伸的第一悬臂22。
所述加热电阻3由金属或半导体材料构成，用以为传感器工作提供所需的工作温度。该加热电阻3包括外形呈矩形的第二基部31，所述第二基部31一长边中部设有第二悬臂32，第二基部31与第二悬臂32相对的一侧开设有第一窗口33，所述第二悬臂32上开设有沿第二悬臂32长度方向延伸的第二窗口34，所 述第二窗口34与第一窗口31连通。加热电阻3上设有两个第一引线(图中未示出)，所述两个第一引线分别设置在第二基部31背离第二悬臂32的侧边，且位于第一窗口33的两侧上。
所述隔离膜4由氮化硅或氧化硅等绝缘介质构成，用以对加热电阻3和检测电极5进行电隔离。其包括呈矩形的第三基部41，所述第三基部41上对应第一引线的位置处分别设有透过孔44，第一引线穿过对应透过孔44后暴露在外；所述第三基部41的一长边中部设有第三悬臂42；且所述隔离膜4的厚度大于所述加热电阻3的厚度；
所述检测电极5一般为贵金属材料电极，如金属铂或金。检测电极5包括外形呈矩形的第四基部51，所述第四基部51一长边中部设有第四悬臂52，第四基部51与第四悬臂52相对的一侧开设有第三窗口53，所述第四悬臂52上开设有沿第四悬臂52长度方向延伸并将第四悬臂52分割的第四窗口54，所述第四窗口54与第三窗口53连通。检测电极5上设有两个第二引线(图中未示出)，所述的两个第二引线分别设置在第四基部51背离第三窗口53的侧边，且位于第三窗口53的两侧上。需要注意的是，第四基部51不能够遮挡透过孔44。
所述硅衬底1、第一基部21、第二基部31、第三基部41和第四基部51对应设置形成基体结构；第一悬臂22、第二悬臂32、第三悬臂42及第四悬臂52对应设置形成悬梁结构；
所述气敏材料6为纳米尺度下金属氧化物半导体材料构成，如二氧化锡、氧化锌或其他氧化物等。气敏材料6设置在第四悬臂52远离基体结构的端部上，使得气敏材料6与检测电极5电性连接。当气敏材料6在吸附特定气体分子后，其电阻率会发生变化，从而达到检测气体的目的。
该气体传感器的核心部分为悬梁结构，用于加载气敏材料的有效区域也仅在悬梁结构远离基体机构的端部。一方面，通过减小有效区的面积降低因热对流和热辐射引起的热量散失，另一方面悬梁结构细而长，可以大幅降低热传导过程中的热量损失，因而该传感器具有极低的功耗。
需要说明的是，本实施例中以基体结构呈矩形、悬梁结构设置在矩形基体结构长边中部处为例进行介绍，但这并不是严格的规定，在实际生产过程中，其基体结构具体形状及悬梁结构的设置位置根据需要进行设置。
如图2所示，在该传感器的一种结构中，所述第一悬臂22、第二悬臂32、第三悬臂42及第四悬臂52的外形均呈矩形。
如图3所示，在该传感器的另一种结构中，所述第一悬臂22、第二悬臂32、第三悬臂42及第四悬臂52的外形均呈等腰梯形，且沿远离基体结构的方向，所述第一悬臂22、第二悬臂32、第三悬臂42及第四悬臂52的宽度均逐渐增大。通过加宽悬梁结构与基体结构的连接宽度，在保留单悬梁式结构所具有的低功耗特点的同时，还提高了整个传感器的机械强度。
所述第一悬臂22上设有沿第一悬臂22长度反向延伸的第一孔23；所述第三悬臂42上设有沿第三悬臂42长度方向延伸的第二孔43，所述第一孔23与第二孔43对应设置。通过设置狭长的第一孔23和第二孔43来进一步降低热传导过程中的热量损失。
再具体地，所述第四基部51的长边的长度短于第一窗口33远离第二悬臂32的侧边的长度。或者，第三窗口53背离第三悬臂52的侧边的长度大于第二基部21的长边的长度。
所述支撑膜2为单层氧化硅层与单层氮化硅层形成的复合膜，氧化硅层与氮 化硅层依次设置在硅衬底1上，且氮化硅层的厚度大于氧化硅层的厚度。所述隔离膜4为氧化硅膜或氮化硅膜。
本实施例中第一窗口33可以为对称结构，通过设置第一窗口33和第二窗口34使得加热电阻3形成为一对称结构；第三窗口53为对称结构，通过第三窗口53和第四窗口54将检测电极5分割成为对称的两部分。需要说明的是，实际生产时，根据需要，第一窗口33和第三窗口53也可以是不对称的结构，此时加热电阻3及检测电极5也为非对称结构。
在气味识别应用中，往往需要将众多的传感器集成在一起工作，本实施例提供的单悬梁式传感器因其结构的独特性，极易实现多个传感器的集成而构成传感器阵列。如图4所示，本实施例还提供了一种传感器阵列，其由上述的单悬梁式传感器平铺而成，其中各个传感器的悬梁结构均位于基体结构的同一侧。当然，也可以根据需要，将各个传感器的悬梁结构分布于基体结构的两侧或采用其他排布方式。
本实施例所述的单悬梁气体传感器的制备方法较传统多悬梁式传感器的制备方法，具有定位容易、工艺简单的特点。下面通过具体实施例来进行详细说明。
实施例一
一种单悬梁气体传感器制备方法，包括以下步骤：
(1)选择选择<100>晶向的硅片作为衬底，电阻率3-8Ωcm，硅片厚度为350±10μm，切边的角度误差<1％；
(2)在衬底上采用热氧化和低压化学气相沉积法依次生长一层厚度为
Figure PCTCN2018120549-appb-000004
的氧化硅和一层厚度为
Figure PCTCN2018120549-appb-000005
的氮化硅；
(3)制作加热电阻3：利用剥离工艺制作铂电阻的加热电阻丝，厚度为
Figure PCTCN2018120549-appb-000006
(4)制作隔离膜4：利用等离子增强化学气相沉积制作氧化硅或氮化硅作为隔离膜4，隔离膜4的厚度为
Figure PCTCN2018120549-appb-000007
然后利用反应离子刻蚀或离子束刻蚀刻蚀隔离膜4，形成透过孔44露出下面的加热电阻3；
(5)制作检测电极5：利用剥离工艺制作材料为铂的检测电极5，厚度为
Figure PCTCN2018120549-appb-000008
(6)释放薄膜：首先利用RIE或Ion-beam彻底刻蚀暴露的支撑膜2，露出硅衬底1形成薄膜释放窗口，然后使用25％浓度的四甲基氢氧化铵进行湿法腐蚀，腐蚀时间为8小时；
(7)气敏材料6的加载：所述悬梁结构的端部沾取适量的二氧化锡气敏材料胶体，然后在600℃下烧结2小时完成气敏材料6的加载，获得单悬臂式气体传感器，再在对应位置设置第一引线、第二引线即可。
实施例二
一种单悬梁气体传感器制备方法，包括以下步骤：
(1)取一硅片作为衬底，其电阻率3-8Ωcm，硅片厚度为350±10μm，切边的角度误差<1％；
(2)在衬底上采用热氧化和低压化学气相沉积法依次生长一层厚度为
Figure PCTCN2018120549-appb-000009
的氧化硅和一层厚度为
Figure PCTCN2018120549-appb-000010
的氮化硅；
(3)制作加热电阻3：利用剥离工艺制作铂电阻的加热电阻丝，厚度为
Figure PCTCN2018120549-appb-000011
(4)制作隔离膜4：利用等离子增强化学气相沉积制作氧化硅或氮化硅作为隔离膜4，隔离膜4的厚度为
Figure PCTCN2018120549-appb-000012
然后利用反应离子刻蚀或离子束刻蚀刻 蚀隔离膜4，形成透过孔44露出下面的加热电阻3；
(5)制作检测电极5：利用剥离工艺制作材料为铂的检测电极5，厚度为
Figure PCTCN2018120549-appb-000013
(6)释放薄膜：首先利用RIE或Ion-beam彻底刻蚀暴露的支撑膜2，露出硅衬底1形成薄膜释放窗口，然后使用干法刻蚀气体二氟化氙(XeF 2)对硅衬底1进行刻蚀，腐蚀时间为30min；
(7)气敏材料6的加载：所述悬梁结构的端部沾取适量的三氧化物气敏材料胶体，然后在600℃下烧结2小时完成气敏材料6的加载，获得单悬臂式气体传感器，再在对应位置设置第一引线、第二引线即可。
实施例三
一种单悬梁气体传感器制备方法，包括以下步骤：
(1)取一硅片作为衬底，其电阻率3-8Ωcm，硅片厚度为350±10μm，切边的角度误差<1％；
(2)在衬底上采用热氧化和低压化学气相沉积法依次生长一层厚度为
Figure PCTCN2018120549-appb-000014
的氧化硅和一层厚度为
Figure PCTCN2018120549-appb-000015
的氮化硅；
(3)制作加热电阻3：利用剥离工艺制作铂电阻的加热电阻丝，厚度为
Figure PCTCN2018120549-appb-000016
(4)制作隔离膜4：利用等离子增强化学气相沉积制作氧化硅或氮化硅作为隔离膜4，隔离膜4的厚度为
Figure PCTCN2018120549-appb-000017
然后利用反应离子刻蚀或离子束刻蚀刻蚀隔离膜4，露出下面的加热电阻3；
(5)制作检测电极5：利用剥离工艺制作材料为铂的检测电极5，厚度为
Figure PCTCN2018120549-appb-000018
(6)释放薄膜：首先利用RIE或Ion-beam彻底刻蚀暴露的支撑膜2，露出硅衬底1形成薄膜释放窗口，然后使用各向同性湿法腐蚀液对硅衬底1进行湿法刻蚀，腐蚀时间为4小时；
(7)气敏材料6的加载：悬梁结构的端部沾取适量的二氧化锡气敏材料胶体，然后在550℃下烧结3小时完成气敏材料6的加载，获得单悬臂式气体传感器，再在对应位置设置第一引线、第二引线即可。
将该单悬梁气体传感器制备成单悬梁气体传感器阵列的方法与上述单悬梁气体传感器制备过程基本相同，其只需要在步骤(6)中，通过设置刻蚀条件，使得释放薄膜之后形成多个基体结构依次连接，每一基体结构上具有一悬梁结构的传感器阵列；然后在每一悬梁结构的端部分别沾取不同配方的二氧化锡气敏材料，形成单悬梁气体传感器阵列。
本发明技术方案在上面结合附图对发明进行了示例性描述，显然本发明具体实现并不受上述方式的限制，只要采用了本发明的方法构思和技术方案进行的各种非实质性改进，或未经改进将发明的构思和技术方案直接应用于其它场合的，均在本发明的保护范围之内。

Claims (10)

  1. 一种单悬梁气体传感器，其特征在于，具有基体结构和悬梁结构，其包括依次层叠设置的如下部分：
    硅衬底；
    支撑膜，包括第一基部和第一悬臂，所述第一悬臂与第一基部的一侧连接；
    加热电阻，包括第二基部和第二悬臂，所述第二悬臂与第二基部的一侧连接；第二基部相对于第二悬臂的一侧开设有第一窗口，所述第二悬臂上设有沿第二悬臂长度方向延伸的第二窗口，所述第二窗口与第一窗口连通；第二基部位于第二窗口两侧的位置上分别设有第一引线；
    隔离膜，包括第三基部和第三悬臂，所述第三悬臂与第三基部的一侧连接；所述第三基部上对应于第一引线的位置设有透过孔，所述第一引线穿过相应透过孔暴露在外；所述隔离膜的厚度大于加热电阻的厚度；
    检测电极，包括第四基部和第四悬臂，所述第四悬臂与第四基部的一侧连接；第四基部背离第四悬臂的一侧设有第三窗口，第四悬臂上设有沿第四悬臂长度方向延伸，并将第四悬臂分割的第四窗口，所述第四窗口与第三窗口连通，并将检测电极分割为两部分；检测电极不覆盖所述透过孔；所述检测电极位于第三窗口两侧的位置上设有第二引线；
    所述硅衬底、第一基部、第二基部、第三基部和第四基部对应设置形成所述基体结构；所述第一悬臂、第二悬臂、第三悬臂和第四悬臂对应设置形成所述悬梁结构；
    所述第四悬臂远离基体结构的一端上设有气敏材料。
  2. 根据权利要求1所述的一种单悬梁气体传感器，其特征在于，所述第一悬臂、第二悬臂、第三悬臂及第四悬臂的外形均呈矩形。
  3. 根据权利要求1所述的一种单悬梁气体传感器，其特征在于，所述第一悬臂、第二悬臂、第三悬臂及第四悬臂的外形均呈等腰梯形，且沿远离基体结构的方向，所述第一悬臂、第二悬臂、第三悬臂及第四悬臂的宽度均逐渐增大。
  4. 根据权利要求1-3任一项所述的一种单悬梁气体传感器，其特征在于，所述第一悬臂上设有沿第一悬臂长度方向延伸的第一孔。
  5. 根据权利要求4所述的一种单悬梁气体传感器，其特征在于，所述第三悬臂上设有第二孔，所述第二孔沿第三悬臂的长度方向延伸，并与第一孔对应设置。
  6. 根据权利要求4所述的一种单悬梁气体传感器，其特征在于，所述硅衬底、第一基部、第二基部、第三基部及第四基部均为矩形；所述第四基部设有第四悬臂的侧边的长度短于第一窗口远离第二悬臂的侧边的长度；或第三窗口远离第四悬臂的侧边的长度长于第二基部设有第二悬臂的侧边的长度。
  7. 根据权利要求1所述的一种单悬梁气体传感器，其特征在于，所述支撑膜为单层氧化硅层与单层氮化硅层形成的复合膜，氧化硅层与氮化硅层依次设置在硅衬底上，且氮化硅层的厚度大于氧化硅层的厚度；所述隔离膜为氧化硅膜或氮化硅膜。
  8. 一种传感器阵列，其特征在于，由多个如权利要求1-7任一项所述的单悬梁气体传感器组成。
  9. 一种传感器的制备方法，其用以制备如权利要求1-7任一项所述的一种单悬梁气体传感器，包括以下步骤：
    (1)选择硅衬底：当释放薄膜采用各向同性的干法刻蚀或湿法腐蚀时，对硅衬底的金相无要求；当释放薄膜采用各向异性湿法腐蚀时，选择<100>晶向的 硅片；
    (2)制作支撑膜：在硅衬底上采用热氧化和低压化学气相沉积法制备；
    (3)制作加热电阻：采用剥离工艺制备；
    (4)制作隔离膜：先采用等离子增强化学气相沉积制备，再利用反应离子刻蚀或离子束刻蚀该隔离膜，形成透过孔露出加热电阻；
    (5)制作检测电极：采用剥离工艺制备；
    (6)释放薄膜：首先利用反应离子刻蚀或离子束刻蚀彻底刻蚀暴露支撑膜，露出硅衬底形成薄膜释放窗口，然后采用四甲基氢氧化铵或氢氧化钾各向异性湿法腐蚀液，或采用各向同性湿法腐蚀液，或XeF 2各向同性干法腐蚀气体来掏空支撑膜下面的硅衬底即可释放出薄膜结构；
    (7)气敏材料的加载：在所述悬梁结构的端部沾取气敏材料，经烧结完成气敏材料的加载。
  10. 根据权利要求8所述的一种传感器的制备方法，其特征在于，所述步骤(3)中加热电阻为铂电阻，厚度为
    Figure PCTCN2018120549-appb-100001
    所述步骤(4)中隔离膜的厚度为
    Figure PCTCN2018120549-appb-100002
    所述步骤(6)中检测电极为铂电极或金电极，其厚度为
    Figure PCTCN2018120549-appb-100003
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