WO2019210656A1 - 一种led发光器件及其制作方法 - Google Patents

一种led发光器件及其制作方法 Download PDF

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Publication number
WO2019210656A1
WO2019210656A1 PCT/CN2018/112214 CN2018112214W WO2019210656A1 WO 2019210656 A1 WO2019210656 A1 WO 2019210656A1 CN 2018112214 W CN2018112214 W CN 2018112214W WO 2019210656 A1 WO2019210656 A1 WO 2019210656A1
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WO
WIPO (PCT)
Prior art keywords
light
led
led chip
bracket
emitting device
Prior art date
Application number
PCT/CN2018/112214
Other languages
English (en)
French (fr)
Inventor
汪洋
Original Assignee
瑞识科技（深圳）有限公司
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Publication of WO2019210656A1 publication Critical patent/WO2019210656A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the invention relates to the field of LED light sources, and in particular to an LED light emitting device and a manufacturing method thereof.
  • a conventional LED light-emitting device see FIG. 11, includes a bracket 1' having a cup-shaped reflector 11' recessed on its upper surface and having an inner wall surface of the reflector 11' as a reflecting surface, and being disposed on the bracket 1'
  • the surrounding LED chip 2' of the reflector, the LED chip 2' is electrically connected to the bracket 1' via two gold wires 3'.
  • the light exit area of the entire LED lighting device is determined by the size of the opening at the upper end of the reflector 11' on the bracket 1'. Since the operation of mounting the LED chip 2' to the inside of the reflector 11' of the bracket 1' requires sufficient space during the fabrication of the existing LED lighting device, the space inside the reflector 11' is required to be sufficiently large.
  • the opening of the upper end of the reflector 11' is required to be sufficiently large, so that the light-emitting area of the entire LED light-emitting device cannot be made smaller due to the limitation of the manufacturing process.
  • the existing LED light-emitting device is not conducive to the subsequent secondary optical design, and it is difficult to achieve device-level optical integration.
  • the technical problem to be solved by the present invention is to provide a method for fabricating an LED light-emitting device that can achieve a smaller light-emitting area than the prior art, and an LED light-emitting device produced by the manufacturing method.
  • Device For LED light-emitting devices with smaller light-emitting areas, it is less difficult to perform secondary optical design, and it is easy to achieve device-level optical integration.
  • the present invention provides an LED light-emitting device, comprising a bracket provided with an LED chip on a surface thereof, wherein the LED chip of the bracket is adhered with a light-transmitting colloid, and the LED chip and the transparent colloid periphery thereof are precisely formed.
  • a reflector covering and surrounding the LED chip comprising a bracket provided with an LED chip on a surface thereof, wherein the LED chip of the bracket is adhered with a light-transmitting colloid, and the LED chip and the transparent colloid periphery thereof are precisely formed.
  • the LED chip is mounted on the bracket before the reflector, and the emitter is precisely formed by the mold injection molding method, so that there is no need to leave the LED chip bonded between the reflector and the LED chip.
  • the operating space on the support that is, the reflector can be infinitely close to the LED chip, and since the reflector surrounds the LED chip, the closer the distance between the reflector and the LED chip, the more the upper end opening of the reflector Small, the smaller the light-emitting area of the entire LED light-emitting device.
  • the reflector is infinitely close to the LED chip
  • the light-emitting area of the entire LED light-emitting device is infinitely close to the area of the upper surface of the LED chip. That is to say, the light-emitting area of the LED light-emitting device can reach a smaller value beyond the limitation of the prior art, facilitating secondary optical design, the optical lens size can be greatly reduced, and the device-level optical integration is easy.
  • the LED chip is electrically connected to the holder by a lead, and the reflector covers at least a portion of the lead.
  • the LED chip When the LED chip is in a formal configuration, the LED chip usually requires a lead to be bonded to the holder, in which case the precisely shaped reflector will cover some or all of the leads.
  • the light transmitting colloid covers a portion of the upper surface of the LED chip.
  • the light-transmitting colloid covers only a part of the upper surface of the LED chip, and the reflector is coated and surrounds the LED chip, that is, the emitter covers the LED chip and is not covered by the transparent colloid.
  • the light-emitting area of the LED chip is thus reduced. More preferably, the four corners of the LED chip are exposed to the light-transmitting colloid, so that the light-emitting area of the LED chip can be further reduced, and at the same time, the light-emitting efficiency of the LED chip is not greatly reduced.
  • the light-transmitting gel contains a phosphor or a matte powder.
  • the surface of the LED chip is provided with a phosphor layer.
  • the holder is made of a light absorbing material. Since the entire LED chip is surrounded by the reflector, the structure and material characteristics of the bracket do not affect the light-emitting effect of the entire LED light-emitting device, so the bracket can be fabricated using a low-cost light-absorbing material. More preferably, the bracket is made of a black EMC material. White light is made of black EMC material, which has better thermal stability and better structural stability. Black EMC is the most widely used encapsulant in the semiconductor industry and has low cost.
  • the LED light emitting device further includes an optical lens, an upper surface of the emitter is higher than an upper surface of the holder, and the optical lens is disposed on an upper surface of the reflector Located directly above the LED chip; the optical lens is a concentrating lens or a astigmatic lens.
  • the optical lens is a collecting lens, a small angle can be obtained.
  • the beam when the optical lens is an astigmatic lens, can obtain a large angle beam.
  • the LED light emitting device further includes an optical lens, an upper surface of the emitter is lower than an upper surface of the holder, and the optical lens is disposed on an upper surface of the holder and located Directly above the LED chip; the optical lens is a concentrating lens or a astigmatic lens.
  • the optical lens is a collecting lens, a small angle beam can be obtained.
  • the optical lens is an astigmatic lens, a large angle beam can be obtained.
  • the invention also provides a method for manufacturing an LED light emitting device, comprising the following steps:
  • Step S1 providing a bracket having a plurality of light emitting regions
  • Step S2 mounting at least one LED chip in each of the light-emitting areas on the bracket;
  • Step S3 using a mold having a plurality of protrusions on the surface, applying a certain amount of transparent glue on each of the protrusions, and aligning the plurality of protrusions into the plurality of the illumination areas respectively
  • the LED chip and by moving the mold or the bracket, the light-transmitting glue on the protruding portion is in contact with the corresponding LED chip, and the transparent glue is cured to form a light-transmitting colloid;
  • Step S4 filling a gap between the bracket and the mold with a high reflective adhesive and curing it to form a reflector
  • Step S5 removing the mold
  • Step S6 cutting in a single unit of the light-emitting area to obtain a plurality of LED light-emitting devices
  • step S1, the step S2, the step S3, the step S4, the step S5, and the step S6 are sequentially performed in order.
  • the LED chip is first mounted in the light-emitting area of the bracket, and then a transparent colloid is formed on the surface of the LED chip by using a mold, and then the high-reflection adhesive is filled in the gap between the bracket and the mold by injection molding. And solidifying to form a reflector. Since the LED chip has been mounted on the bracket before the emitter is formed, it is not necessary to consider leaving a gap between the reflector and the LED chip in forming the reflector. The chip is bonded to the operation space on the bracket, so that the reflector formed by injection molding can be infinitely close to the LED chip, so that the light-emitting area of the LED light-emitting device is infinitely close to the area of the upper surface of the LED chip.
  • the above manufacturing method breaks through the limitations of the prior art, and produces an LED light-emitting device having a smaller light area.
  • the LED light-emitting device with smaller light-emitting area facilitates secondary optical design and is easy to achieve device-level optical integration.
  • the above manufacturing method is to simultaneously form a plurality of LED light-emitting devices on a support having a plurality of light-emitting regions by an integral press molding operation, and then cut and separate into individual LED light-emitting devices, which has the advantage of high production efficiency.
  • step SSB is further included between the step S5 and the step S6: attaching a connected lens having a plurality of optical lenses to the upper surface of the holder or the reflector a plurality of the optical lenses are in one-to-one correspondence with the plurality of the light-emitting regions; the optical lens is a condensing lens or a astigmatic lens.
  • the conjoined lens in step SB is separated and cut in step S6, so that each individual LED light-emitting device is provided with an optical lens to meet more control requirements of the illumination angle, and the production method is advantageous for mass production. LED light emitting device for optical lenses.
  • the LED chip is a flip chip structure.
  • the LED chip is a self-contained structure.
  • the dress structure includes a horizontal structure chip and a vertical structure chip.
  • the step SA is further included: electrically connecting each of the LED chips to the bracket through a lead; the step 4 is formed.
  • the reflector covers at least a portion of the leads.
  • a lower surface of the projection of the mold has a cavity for accommodating the light-transmitting glue.
  • the structure of the cavity can be designed according to the optical design requirements, so that the transparent glue can be precisely controlled to form a light-transmitting colloid on the LED chip that satisfies a certain optical requirement. Effectively solving the problem of adopting natural leveling in the conventional scheme of the industry is easy to cause problems of poor and low production efficiency.
  • the LED light emitting device provided by the invention and the manufacturing method thereof have the following beneficial effects:
  • the LED chip is mounted on the bracket before the reflector, and the emitter is precisely formed by the mold injection molding method, so that there is no need to leave a space between the reflector and the LED chip.
  • the LED chip is bonded to the operation space on the support, that is, the reflector can be infinitely close to the LED chip, and the reflector surrounds the LED chip.
  • the entire LED light-emitting device emits light.
  • the area is infinitely close to the area of the upper surface of the LED chip. That is to say, the light-emitting area of the LED light-emitting device can reach a smaller value beyond the limitation of the prior art, facilitating secondary optical design, the optical lens size can be greatly reduced, and the device-level optical integration is easy.
  • the LED chip is first mounted in the light-emitting area of the bracket, and then a transparent colloid is formed on the surface of the LED chip by using a mold, and then filled in the gap between the bracket and the mold by injection molding.
  • the highly reflective adhesive is cured and formed to form a reflector. Since the LED chip has been mounted on the holder before the emitter is formed, it is not necessary to consider leaving between the reflector and the LED chip in the process of forming the reflector.
  • the LED chip is conveniently bonded to the operation space on the bracket, so that the reflector formed by injection molding can be infinitely close to the LED chip, so that the light-emitting area of the LED light-emitting device is infinitely close to the area of the upper surface of the LED chip.
  • the above manufacturing method breaks through the limitations of the prior art, and produces an LED light-emitting device having a smaller light area.
  • LED light-emitting devices with smaller light-emitting areas facilitate secondary optical design, and the size of optical lenses can be greatly reduced, making it easy to achieve device-level optical integration.
  • the above manufacturing method is to simultaneously form a plurality of LED light-emitting devices on a support having a plurality of light-emitting regions by an integral press molding operation, and then cut and separate into individual LED light-emitting devices, which has the advantage of high production efficiency.
  • FIG. 1 is a schematic view of a bracket in step S1 in a manufacturing method according to Embodiment 1 of the present invention
  • step S2 is a schematic diagram of implementation of step S2 in a manufacturing method according to Embodiment 1 of the present invention
  • FIG. 3 is a schematic view of a mold in step S3 in the manufacturing method according to the first embodiment of the present invention.
  • step S3 is a schematic diagram of implementation of step S3 in a manufacturing method according to Embodiment 1 of the present invention.
  • FIG. 5 is a schematic diagram of implementation of step S4 in a manufacturing method according to Embodiment 1 of the present invention.
  • FIG. 6 is a schematic diagram of implementation of step S6 in a manufacturing method according to Embodiment 1 of the present invention.
  • FIG. 7 is a schematic structural diagram of an LED light emitting device according to Embodiment 2 of the present invention.
  • FIG. 8 is a schematic structural diagram of an LED light emitting device according to Embodiment 3 of the present invention.
  • FIG. 9 is a schematic diagram showing a positional relationship between an LED chip, a light-transmitting colloid, and a bracket in an LED light-emitting device according to Embodiment 4 of the present invention.
  • FIG. 10 is a flowchart of a manufacturing method according to Embodiment 1 of the present invention.
  • FIG. 11 is a schematic structural view of an LED light emitting device in the prior art.
  • a method for fabricating the LED light emitting device 100 including the following steps:
  • Step S1 providing a bracket 1 having a plurality of light-emitting regions 11;
  • Step S2 mounting at least one LED chip 2 in each of the light-emitting regions 11 on the bracket 1;
  • Step S3 using a mold 7 having a plurality of protrusions 71 on the surface, applying a certain amount of the transparent glue 400 to each of the protrusions, and aligning the plurality of protrusions 71 with the plurality of protrusions 71 respectively
  • the LED chip 2 in the light-emitting area 11 and moving the mold 7 or the holder 1 to make the light-transmitting glue 400 on the protruding portion 71 contact the corresponding LED chip 2, and
  • the light transmissive glue 400 is cured to form a light transmissive colloid 4;
  • Step S4 filling the gap between the bracket 1 and the mold 7 is filled with high reflective adhesive 500 and solidified to form a reflector 5;
  • Step S5 removing the mold 7
  • Step S6 cutting in a single unit of the light-emitting area 11 to obtain a plurality of LED light-emitting devices 100;
  • step S1, the step S2, the step S3, the step S4, the step S5, and the step S6 are sequentially performed in order.
  • the LED chip 2 is first mounted in the light-emitting region 11 of the holder 1, and then the transparent colloid 4 is formed on the surface of the LED chip 2 by using the mold 7, and then the holder 1 and the mold 7 are injection-molded.
  • the gap between the high-reflection adhesives 500 is filled and cured to form the reflector 5, since the LED chip 2 has been mounted on the holder 1 before the formation of the emitter, therefore, it is not necessary to consider in the process of forming the reflector 5.
  • An operation space for facilitating bonding of the LED chip 2 to the holder 1 is left between the reflector 5 and the LED chip 2, and therefore, it is not necessary to consider between the reflector 5 and the LED chip 2 in forming the reflector 5.
  • An operation space for facilitating bonding of the LED chip 2 to the bracket 1 is provided, so that the reflector 5 formed by injection molding can be infinitely close to the LED chip 2, so that the light-emitting area of the LED light-emitting device 100 is infinitely close to the upper surface of the LED chip 2. Area.
  • the above manufacturing method breaks through the limitations of the prior art, and produces an LED light emitting device 100 having a smaller light area.
  • the LED light-emitting device 100 having a smaller light-emitting area facilitates secondary optical design, and a small-sized optical lens can be added to the LED light-emitting device 100 to facilitate device-level optical integration.
  • the above manufacturing method is to simultaneously form a plurality of LED light-emitting devices 100 on the holder 1 having a plurality of light-emitting regions 11 by an integral press molding operation, and then cut and separate into individual LED light-emitting devices 100, which has the advantage of high production efficiency.
  • the upper surface of the bracket 1 provided in the step S1 has a plurality of light-emitting regions 11 arranged in a rectangular array.
  • the bracket 1 can be made of a black EMC material.
  • the entire LED chip 2 is surrounded by the reflector 5, so that the structure and material characteristics of the bracket 1 do not affect the light output of the entire LED light emitting device 100.
  • the effect is that the bracket 1 can be made of a low-cost black EMC material, white light with a black EMC material, better thermal stability, and better structural stability of the product.
  • each of the light-emitting regions 11 is bonded to the LED chip 2 with a phosphor layer on the surface, and the LED chip 2 is a formal structure, and its two ends are respectively
  • the bracket 1 is electrically connected by a lead 3, which may be, but not limited to, a gold wire.
  • a plurality of the projections 71 of the lower surface of the mold 7 in the step S3 are arranged in a rectangular array like the plurality of the light-emitting regions 11 on the bracket 1, and
  • Each of the convex lower surfaces has a concavely formed cavity.
  • the cavity is a regular square, and the cavity is slightly larger than the size of the LED chip 2.
  • the light-transmitting glue 400 is mixed with a phosphor or a matte powder and coated in the cavity.
  • the mold 7 is first placed above the bracket 1 such that a plurality of the protrusions 71 of the lower surface of the mold 7 correspond one-to-one to the upper surface of the bracket 1
  • the illuminating region 11 and then slowly moving the mold 7 downward may be adopted, so that the light-transmitting glue in each of the cavities 400 is in contact with the corresponding LED chip 2, since the size of the cavity is larger than the size of the LED chip 2, the transparent glue 400 in the cavity first covers when contacting the LED chip 2 On the upper surface of the LED chip 2, the excess transparent glue 400 flows to the four sides of the LED chip 2, and after the transparent adhesive 400 is cured, the upper surface of the LED chip 2 is coated and Four sides of the transparent colloid 4.
  • the light-transmitting glue 400 undoubtedly covers a portion of the lead 3 drawn from both ends of the LED chip 2.
  • the high-reflection adhesive 500 is injected into the gap between the mold 7 and the bracket 1, in the process, because each of the LED chips 2 The upper surface is covered by the formed light-transmitting colloid 4, and due to the presence of the mold 7, the injected high-reflective adhesive 500 does not reach the upper surface of the LED chip 2 or the light-transmitting colloid 4, and therefore, the reflection after molding The body 5 does not block the light output of the upper surface of the LED chip 2. It should also be noted that in this process, the highly reflective adhesive 500 will undoubtedly cover the portion of the lead 3 exposed to the transparent colloid 4.
  • the wavelength of the high reflective adhesive 500 is selected according to the wavelength of the light emitted by the LED chip 2.
  • the high reflective adhesive 500 is a highly reflective silicon dioxide having a reflectance greater than 70%.
  • the embodiment further provides an LED light emitting device 100 prepared by the manufacturing method.
  • the LED light emitting device 100 includes a bracket 1 having a surface on which an LED chip 2 is disposed, and the LED chip 2 is a formal structure.
  • the LED chip 2 is horizontally arranged, and the two ends of the LED chip 2 are electrically connected to the bracket 1 through a lead wire 3, and the LED chip 2 on the bracket 1 is attached with a light-transmitting colloid 4,
  • the transparent colloid 4 contains phosphor or matte powder and covers the upper surface and four sides of the LED chip 2.
  • the LED chip 2 and the periphery of the transparent colloid 4 are precisely formed by injection molding of the mold 7.
  • the reflector 5 is coated and surrounds the LED chip 2, and the reflector 5 also wraps a portion of the lead 3 exposed to the light-transmitting colloid 4.
  • the reflector 5 and the LED chip 2 are separated by only one layer of the transparent colloid 4, and the transparent colloid 4 is respectively associated with the LED chip 2 and the
  • the reflectors 5 are closely connected, and the gap between the reflector 5 and the LED chip 2 is greatly reduced with respect to the existing LED light-emitting device 100, so that the reflector 5 in the embodiment is effectively narrowed.
  • the light exit area of the LED light emitting device 100 is made easier to perform secondary optical design, and a small-sized optical lens can be used in performing the secondary optical design, thereby achieving optical integration at the device level.
  • This embodiment proposes a method for fabricating the LED light emitting device 100, which differs from the manufacturing method in the first embodiment in that step SB is added between the step S5 and the step S6.
  • the step SB is to mount the connected lens 600 having the plurality of optical lenses 6 on the upper surface of the bracket 1 or the upper surface of the reflector 5, and the plurality of the optical lenses 6 and the plurality of the optical lenses 6
  • the light-emitting areas 11 correspond one-to-one. It should be understood by those skilled in the art that in the step SB, when the upper surface of the bracket 1 is higher than the upper surface of the reflector 5, the joint lens 600 is attached to the bracket. 1; when the upper surface of the holder 1 is lower than the upper surface of the reflector 5, the connected lens 600 is attached to the reflector 5.
  • step SB The conjoined lens 600 in step SB is separated and cut in step S6, so that each individual LED light emitting device 100 is provided with an optical lens 6 to meet more control requirements of the illumination angle, which is advantageous for mass production.
  • the plurality of the optical lenses 6 included in the connected lens 600 are arranged in a rectangular array like the plurality of the light-emitting regions 11 on the bracket 1 when the connected lens 600 is mounted.
  • a plurality of the optical lenses 6 are in one-to-one correspondence with the plurality of LED chips 2 when the upper surface of the plurality of the brackets 1 or the upper surface of the reflector 5 is reached.
  • the optical lens 6 is selected as a collecting lens.
  • an LED light emitting device 100 manufactured by using the manufacturing method provided in this embodiment is used.
  • the LED light emitting device 100 in this embodiment is basically similar in structure to the LED light emitting device 100 in the first embodiment, the only difference being that the reflector 5 has a collecting lens above the size of the collecting lens. Small, specifically, its orthographic projection area is smaller than the orthographic projection area of the LED light emitting device 100. In this manner, a device-level optically integrated LED light emitting device 100 having a small illuminating beam angle is formed.
  • This embodiment proposes a manufacturing method of the LED light emitting device 100, which is different from the manufacturing method in the second embodiment in that the optical lens 6 is selected as an astigmatic lens.
  • an LED light emitting device 100 manufactured by using the manufacturing method provided in this embodiment is used.
  • the LED light emitting device 100 in this embodiment is basically similar in structure to the LED light emitting device 100 in the second embodiment, the only difference being that the collecting lens on the reflector 5 is replaced by an astigmatism lens, the astigmatic lens
  • the size is small, and specifically, its orthographic projection area is smaller than the orthographic projection area of the LED light emitting device 100. In this manner, a device-level optically integrated LED light emitting device 100 having a large illuminating beam angle is formed.
  • the embodiment provides a method for fabricating the LED light emitting device 100, which is different from the manufacturing method in the first embodiment in that the cavity of the protruding portion 71 of the lower surface of the mold 7 in the step S3 is The shape is a flat cylindrical shape, and the diameter of the cross section of the cavity is smaller than the diagonal of the upper surface of the LED chip 2.
  • the lower surface of the cavity just coincides with the LED
  • the transparent glue 400 in the cavity does not cover the entire upper surface of the LED chip 2, and does not flow to the four sides of the LED chip 2, but in the
  • the upper surface of the LED chip 2 forms a disc-shaped transparent colloid 4 conforming to the shape of the cavity, and the cross-sectional circular dimension of the transparent colloid 4 is smaller than the diagonal dimension of the upper surface of the LED chip 2.
  • the light-transmitting colloid 4 covers only a part of the upper surface of the LED chip 2, and the four corners of the upper surface of the LED chip 2 and the four sides of the LED chip 2 are exposed to the light-transmitting colloid 4.
  • the high-reflection adhesive 500 in the subsequent step S4, in the process in which the high-reflection adhesive 500 is injected into the gap between the mold 7 and the bracket 1, the high-reflection adhesive 500 will be wrapped.
  • the four corners of the upper surface of the LED chip 2 and the four sides of the LED chip 2 are covered. This causes the light-emitting area of the LED chip 2 to be reduced, which is more advantageous for narrowing the light-emitting area of the LED light-emitting device 100.
  • the LED light emitting device 100 includes a bracket 1 having a surface on which an LED chip 2 is disposed.
  • the LED chip 2 is a self-contained structure, and two ends of the LED chip 2 are electrically connected to the bracket 1 through a lead wire 3, respectively.
  • the LED chip 2 on the bracket 1 is attached with a light-transmitting colloid 4. Referring to FIG. 9, the light-transmitting colloid 4 has a round cake shape, and the diameter of the cross-sectional circle is smaller than the diagonal of the upper surface of the LED chip 2.
  • the light-transmitting colloid 4 covers only a part of the upper surface of the LED chip 2, and the four corners of the upper surface of the LED chip 2 and the four sides of the LED chip 2 are exposed to the transparent colloid 4, the LED chip 2 and its periphery of the transparent colloid 4 are precisely formed by injection molding of the mold 7 to have a reflector 5 wrapped around the LED chip 2, and the reflector 5 encloses the LED chip 2 And a portion of the light-transmitting colloid 4 and a portion of the lead 3 exposed to the light-transmitting colloid 4.
  • the reflector 5 directly covers the four sides of the LED chip 2, thereby minimizing the interval between the reflector 5 and the LED chip 2.
  • a smaller angle of illumination of the LED light emitting device 100 is facilitated.
  • the four corners of the upper surface of the LED chip 2 are also covered by the reflector 5, so that the light-emitting area of the LED chip 2 is reduced, thereby further reducing the light-emitting area of the entire LED light-emitting device 100.
  • the present embodiment provides a method for fabricating the LED light emitting device 100, which is different from the manufacturing method in the first embodiment in that the LED chip 2 is in a flip-chip structure in the step S2, and therefore, the LED The leads 3 are not drawn at both ends of the chip 2.
  • This embodiment also provides the LED light emitting device 100 produced by the manufacturing method.
  • the LED light emitting device 100 in this embodiment is substantially similar in structure to the LED light emitting device 100 in the first embodiment. The only difference is that the LED chip 2 of the LED light emitting device 100 in this embodiment has no lead wires at both ends thereof. .
  • the present embodiment provides a method for fabricating the LED light emitting device 100, which is different from the manufacturing method in the first embodiment in that the LED chip 2 is a forward rotation structure and the LED chip is in the step S2. It is arranged vertically. Therefore, the LED chip 2 is electrically connected to the bracket 1 through only one lead 3 at one end.
  • the lead 3 may be, but not limited to, a gold wire.
  • This embodiment also provides the LED light emitting device 100 produced by the manufacturing method.
  • the LED light emitting device 100 in this embodiment is substantially similar in structure to the LED light emitting device 100 in the first embodiment. The only difference is that only one end of the LED chip 2 in the LED light emitting device 100 in this embodiment passes.
  • the lead 3 is electrically connected to the bracket 1.

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Abstract

LED发光器件及其制作方法，该LED发光器件包括表面设置有LED芯片（2）的支架（1），该支架（1）上LED芯片（2）附着透光胶体（4），该LED芯片（2）及透光胶体（4）周边通过模具注塑方式精确成型包覆并环绕于该LED芯片的反射体（5）。在该LED发光器件中，LED芯片（2）先于反射体（5）安装在支架（1）上，反射体（5）通过模具注塑方式精确成型，因而反射体（5）与LED芯片（2）之间不需要留出便于将LED芯片（2）键合于支架上的操作空间，反射体（5）可无限靠近LED芯片（2）。由于反射体（5）环绕LED芯片（2），所以当反射体（5）与LED芯片（2）之间的距离越近，则整个LED发光器件的出光面积越小。当反射体（5）无限靠近LED芯片（2）时，整个LED发光器件的发光面积无限接近LED芯片（2）的上表面面积。小发光面的LED发光器件可降低二次光学设计的难度，光学透镜尺寸能大幅缩小以实现器件级的光学集成。

Description

一种LED发光器件及其制作方法 技术领域
本发明涉及LED光源领域，具体涉及一种LED发光器件及其制作方法。
 背景技术
现有的LED发光器件，参见图11，包括上表面内凹形成有杯状反射体11’的且将反射体11’的内壁面作为反射面的支架1’和配置在支架1’上且被反射体的环绕的LED芯片2’，LED芯片2’通过两根金线3’与支架1’导通。显而易见地，整个LED发光器件的出光面积由支架1’上的反射体11’上端的开口大小决定。由于，现有的LED发光器件的制作过程中，将LED芯片2’安装到支架1’的反射体11’内侧的操作需要足够的空间，这就要求反射体11’的内侧的空间足够大，自然也就要求反射体11’上端的开口足够大，这使得整个LED发光器件的出光面积因受到制作工艺的限制而无法做到更小。导致现有的LED发光器件不利于后续的二次光学设计，难以做到器件级光学集成。
 技术问题
本发明要解决的技术问题在于，针对现有技术的上述缺点，提供一种可以突破现有技术的限制获得出光面积更小的LED发光器件的制作方法，以及由该制作方法制得的LED发光器件。对于发光面积更小的LED发光器件，进行二次光学设计的难度更低，易于做到器件级光学集成。
 技术解决方案
为解决上述技术问题，本发明提供了一种LED发光器件，包括表面设置有LED芯片的支架，所述支架上LED芯片附着有透光胶体，所述LED芯片及其透光胶体周边精确成型有包覆并环绕于所述LED芯片的反射体。
在上述技术方案中，LED芯片是先于反射体安装在支架上的，发射体则通过模具注塑方式精确成型的，这使得在反射体与LED芯片之间不需要留出便于将LED芯片键合于支架上的操作空间，也就是说，反射体可以无限地靠近LED芯片，又由于反射体环绕LED芯片，那么，反射体与LED芯片之间的距离越近，反射体的上端开口也就越小，整个LED发光器件的发光面积也就越小。如此，当反射体无限地靠近LED芯片时，整个LED发光器件的出光面积无限接近LED芯片的上表面的面积。也就是说，所述LED发光器件的出光面积可以突破现有技术的限制而达到更小的值，便于进行二次光学设计，光学透镜尺寸能大幅缩小，易于做到器件级光学集成。
作为本发明的LED发光器件的优选，所述LED芯片通过引线与所述支架电性连接，所述反射体至少包覆部分所述引线。当LED芯片为正装结构时，LED芯片通常需要引线与支架进行键合，在这种情况下，精确成型的反射体会包覆部分或全部的引线。
作为本发明的LED发光器件的优选，所述透光胶体覆盖于所述LED芯片的上表面的一部分。在这里，由于透光胶体仅覆盖于所述LED芯片的上表面的一部分，而反射体是包覆并环绕于所述LED芯片，也即发射体会包覆LED芯片的未被透光胶体覆盖的部分，如此减小了LED芯片的发光面积。更优选的，所述LED芯片的四角外露于所述透光胶体，如此可进一步的缩小LED芯片的发光面积，同时又不至于使LED芯片的出光效率大幅下降。
作为本发明的LED发光器件的优选，所述透光胶体内含有荧光粉或哑光粉。
作为本发明的LED发光器件的优选，所述LED芯片的表面带有荧光粉层。
作为本发明的LED发光器件的优选，所述支架由吸光材料制成。因为整个LED芯片被反射体包围，所以支架的结构及材料的特性都不影响整个LED发光器件的出光效果，所以支架可以采用成本低廉的吸光材料来制作。更优选的，所述支架由黑色EMC材料制成。用黑色EMC材料做白光，热稳定性更好，同时产品的结构稳定性也更好，而且黑色EMC是半导体行业用量最大的封装胶、且成本低廉。
作为本发明的LED发光器件的优选，所述LED发光器件还包括光学透镜，所述发射体的上表面高于所述支架的上表面，所述光学透镜设于所述反射体的上表面且位于所述LED芯片的正上方；所述光学透镜为聚光透镜或散光透镜。当所述发射体的上表面高于所述支架的上表面时，在反射体上增设光学透镜，可以进一步的对LED芯片的光束角度进行控制，当光学透镜为聚光透镜时可以获得小角度光束，当光学透镜为散光透镜可以获得大角度光束。
作为本发明的LED发光器件的优选，所述LED发光器件还包括光学透镜，所述发射体的上表面低于所述支架的上表面，所述光学透镜设于所述支架的上表面且位于所述LED芯片的正上方；所述光学透镜为聚光透镜或散光透镜。当所述发射体的上表面低于所述支架的上表面时，在支架上增设光学透镜，可以进一步的对LED芯片的光束角度进行控制，当光学透镜为聚光透镜时可以获得小角度光束，当光学透镜为散光透镜可以获得大角度光束。
本发明还提供了一种LED发光器件的制作方法，包括如下步骤：
步骤S1、提供具有多个发光区域的支架；
步骤S2、在所述支架上的每一个所述发光区域内分别贴装至少一个LED芯片；
步骤S3、利用一下表面具有多个凸出部的模具，在每一个所述突出部上涂覆一定量的透光胶水，将多个所述凸出部分别对准多个所述发光区域内的所述LED芯片，并通过移动所述模具或所述支架使得所述凸出部上的透光胶水与对应的所述LED芯片接触，并使所述透光胶水固化以形成透光胶体；
步骤S4、在所述支架与所述模具之间的间隙中填充高反射胶并使之固化以形成反射体；
步骤S5、移除所述模具；
步骤S6、以单个所述发光区域为单位进行切割得到多个LED发光器件；
所述步骤S1、步骤S2、步骤S3、步骤S4、步骤S5和步骤S6按先后顺序依次执行。
在上述制作方法中，先将LED芯片贴装至支架的发光区域内，然后利用模具在LED芯片的表面形成透光胶体，之后通过注塑的方式在支架与模具之间的间隙中填充高反射胶并使之固化以形成反射体，由于在发射体形成之前，LED芯片已经贴装至支架上，因此，在形成反射体的过程中不需要考虑在反射体与LED芯片之间留出便于将LED芯片键合于支架上的操作空间，如此，在注塑形成的反射体可以无限地靠近LED芯片，使得LED发光器件的出光面积无限接近LED芯片的上表面的面积。从而，上述制作方法突破了现有技术的限制，制得出光面积更小的LED发光器件。出光面积更小的LED发光器件便于进行二次光学设计，易于做到器件级光学集成。
另外，上述制作方法是通过一体模压成型操作在具有多个发光区域的支架上同时形成多个LED发光器件，然后再切割分离成单个的LED发光器件，具有生产效率高的优势。
作为本发明的制作方法的优选，在所述步骤S5和步骤S6之间还包括步骤SB：将具有多个光学透镜的连体透镜贴装于所述支架的上表面或所述反射体的上表面，多个所述光学透镜与多个所述发光区域一一对应；所述光学透镜为聚光透镜或散光透镜。如此，步骤SB中的连体透镜会在步骤S6中被分离切割，使得每一个单个的LED发光器件都具备光学透镜，以满足更多的发光角度的控制需求，这样的制作方式利于批量生产具备光学透镜的LED发光器件。
作为本发明的制作方法的优选，所述LED芯片为倒装结构。
作为本发明的制作方法的优选，所述LED芯片为正装结构。这里，正装结构包含水平结构芯片和垂直结构芯片。
作为本发明的制作方法的优选，在所述步骤S2和所述步骤S3之间还包括步骤SA：将每一个所述LED芯片通过引线与所述支架电性连接；所述步骤4中形成的所述反射体至少包覆部分所述引线。
作为本发明的制作方法的优选，所述模具的所述凸出部的下表面具有用于容纳所述透光胶水的型腔。型腔的结构可以根据光学设计要求进行设计，如此精准控制所述透光胶水在LED芯片上形成满足一定光学需求的形态的透光胶体。有效解决行业常规方案采用自然流平的方案易造成不良和生产效率低的问题。
 有益效果
与现有技术相比，实施本发明提供的LED发光器件及其制作方法，具有如下有益效果：
1、在所述LED发光器件中，LED芯片是先于反射体安装在支架上的，发射体则通过模具注塑方式精确成型的，这使得在反射体与LED芯片之间不需要留出便于将LED芯片键合于支架上的操作空间，也就是说，反射体可以无限地靠近LED芯片，又由于反射体环绕LED芯片，如此，当反射体无限地靠近LED芯片时，整个LED发光器件的出光面积无限接近LED芯片的上表面的面积。也就是说，所述LED发光器件的出光面积可以突破现有技术的限制而达到更小的值，便于进行二次光学设计，光学透镜尺寸能大幅缩小，易于做到器件级的光学集成。
2、在所述制作方法中，先将LED芯片贴装至支架的发光区域内，然后利用模具在LED芯片的表面形成透光胶体，之后通过注塑的方式在支架与模具之间的间隙中填充高反射胶并使之固化以形成反射体，由于在发射体形成之前，LED芯片已经贴装至支架上，因此，在形成反射体的过程中不需要考虑在反射体与LED芯片之间留出便于将LED芯片键合于支架上的操作空间，如此，在注塑形成的反射体可以无限地靠近LED芯片，使得LED发光器件的出光面积无限接近LED芯片的上表面的面积。从而，上述制作方法突破了现有技术的限制，制得出光面积更小的LED发光器件。出光面积更小的LED发光器件便于进行二次光学设计，光学透镜尺寸能大幅缩小，易于做到器件级的光学集成。另外，上述制作方法是通过一体模压成型操作在具有多个发光区域的支架上同时形成多个LED发光器件，然后再切割分离成单个的LED发光器件，具有生产效率高的优势。
 附图说明
图1为本发明实施例一提供的制作方法中步骤S1中的支架的示意图；
图2为本发明实施例一提供的制作方法中步骤S2的实施示意图；
图3为本发明实施例一提供的制作方法中步骤S3中的模具的示意图；
图4为本发明实施例一提供的制作方法中步骤S3的实施示意图；
图5为本发明实施例一提供的制作方法中步骤S4的实施示意图；
图6为本发明实施例一提供的制作方法中步骤S6的实施示意图；
图7为本发明实施例二提供的LED发光器件的结构示意图；
图8为本发明实施例三提供的LED发光器件的结构示意图；
图9为本发明实施例四提供的LED发光器件中的LED芯片、透光胶体以及支架之间的位置关系示意图；
图10为本发明实施例一提供的制作方法的流程图；
图11为现有技术中的LED发光器件的结构示意图。
具体实施方式中的附图标号说明：
支架 1 发光区域 11
LED芯片 2 引线 3
透光胶体 4 反射体 5
光学透镜 6    
模具 7 凸出部 71
透光胶水 400 高反射胶 500
连体透镜 600 LED发光器件 100
本发明的实施方式
为了对本发明的技术特征、目的和效果有更加清楚的理解，现对照附图详细说明本发明的具体实施方式。显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
实施例一
请参考图10，在本实施例中，提出了一种LED发光器件100的制作方法，包括如下步骤：
步骤S1、提供具有多个发光区域11的支架1；
步骤S2、在所述支架1上的每一个所述发光区域11内分别贴装至少一个LED芯片2；
步骤S3、利用一下表面具有多个凸出部71的模具7，在每一个所述突出部上涂覆一定量的透光胶水400，将多个所述凸出部71分别对准多个所述发光区域11内的所述LED芯片2，并通过移动所述模具7或所述支架1使得所述凸出部71上的透光胶水400与对应的所述LED芯片2接触，并使所述透光胶水400固化以形成透光胶体4；
步骤S4、在所述支架1与所述模具7之间的间隙中填充高反射胶500并使之固化以形成反射体5；
步骤S5、移除所述模具7；
步骤S6、以单个所述发光区域11为单位进行切割得到多个LED发光器件100；
所述步骤S1、步骤S2、步骤S3、步骤S4、步骤S5和步骤S6按先后顺序依次执行。
在上述制作方法中，先将LED芯片2贴装至支架1的发光区域11内，然后利用模具7在LED芯片2的表面形成透光胶体4，之后通过注塑的方式在支架1与模具7之间的间隙中填充高反射胶500并使之固化以形成反射体5，由于在发射体形成之前，LED芯片2已经贴装至支架1上，因此，在形成反射体5的过程中不需要考虑在反射体5与LED芯片2之间留出便于将LED芯片2键合于支架1上的操作空间，因此，在形成反射体5的过程中不需要考虑在反射体5与LED芯片2之间留出便于将LED芯片2键合于支架1上的操作空间，如此，在注塑形成的反射体5可以无限地靠近LED芯片2，使得LED发光器件100的出光面积无限接近LED芯片2的上表面的面积。从而，上述制作方法突破了现有技术的限制，制得出光面积更小的LED发光器件100。出光面积更小的LED发光器件100便于进行二次光学设计，可在所述LED发光器件100上加上小尺寸的光学透镜，易于做到器件级光学集成。另外，上述制作方法是通过一体模压成型操作在具有多个发光区域11的支架1上同时形成多个LED发光器件100，然后再切割分离成单个的LED发光器件100，具有生产效率高的优势。
具体的，参见图1，所述步骤S1中提供的所述支架1的上表面具有多个呈矩形阵列排布的发光区域11。为了降低生产成本，所述支架1可以采用黑色EMC材料制成。因为通过本实施例提供的所述制作方法制作而成的LED发光器件100中，整个LED芯片2被反射体5包围，所以支架1的结构及材料的特性都不影响整个LED发光器件100的出光效果，所以所述支架1可以采用成本低廉黑色EMC材料，用黑色EMC材料做白光，热稳定性更好，同时产品的结构稳定性也更好。
参见图2，在所述步骤S2中，每一个所述发光区域11内均键合一个表面带有荧光粉层的所述LED芯片2，且所述LED芯片2为正装结构，其两端分别通过一根引线3与所述支架1电性连接，所述引线3可以是但不限于金线。
参见图3和图4，所述步骤S3中的模具7的下表面的多个所述凸出部71与所述支架1上的多个所述发光区域11一样地呈矩形阵列排布，且每一个所述凸出的下表面均具有一个内凹形成的型腔，本实施例中，所述型腔呈规则的正方体，且所述型腔的尺寸略大于与所述LED芯片2的尺寸，所述透光胶水400内混合有荧光粉或哑光粉，涂覆在所述型腔内。在制作过程中，先将所述模具7置于所述支架1的上方，并使得所述模具7的下表面的多个所述凸出部71一一对应所述支架1的上表面的多个所述发光区域11，然后缓缓向下移动所述模具7（在其他实施例中，可以采用缓缓向上移动所述支架1的方式），使得每一个所述型腔内的透光胶水400与对应的所述LED芯片2接触，由于所述型腔的尺寸大于所述LED芯片2的尺寸，因此所述型腔内的透光胶水400在接触到所述LED芯片2时，首先覆盖所述LED芯片2的上表面，多出的透光胶水400则流动至所述LED芯片2的四个侧面，待所述透光胶水400固化后形成包覆所述LED芯片2的上表面和四个侧面的透光胶体4。另外要指出的是，在这一过程中，所述透光胶水400无疑会包覆部分的自所述LED芯片2的两端引出的所述引线3。
参见图5，在所述步骤S4中，所述高反射胶500被注入到所述模具7和所述支架1之间的间隙中，在这一过程中，因为每个所述LED芯片2的上表面被成型的透光胶体4所覆盖，并且由于所述模具7的存在，注入的高反射胶500不会达到LED芯片2或所述透光胶体4的上表面，因此，成型后的反射体5不会阻挡LED芯片2的上表面的光输出。另外要指出的是，在这一过程中，所述高反射胶500无疑会包覆所述引线3的露出于所述透光胶体4的部分。本实施例中，高反射胶500的波长根据所述LED芯片2发射的光的波长来进行选择，优选地，所述高反射胶500是反射率大于70％的高反射性二氧化硅。
本实施例还提供了通过所述制作方法而制得的LED发光器件100，参见图6，所述LED发光器件100包括表面设置有LED芯片2的支架1，所述LED芯片2为正装结构，所述LED芯片2是水平布置的，所述LED芯片2的两端分别通过一根引线3与所述支架1电连接，所述支架1上的所述LED芯片2附着有透光胶体4，所述透光胶体4内含有荧光粉或哑光粉并包覆所述LED芯片2的上表面及四个侧面，所述LED芯片2及其透光胶体4周边通过模具7注塑方式精确成型有包覆并环绕于所述LED芯片2的反射体5，所述反射体5还包裹所述引线3的露出于所述透光胶体4的部分。在所述LED发光器件100中，所述反射体5与所述LED芯片2之间仅相隔一层所述透光胶体4，且所述透光胶体4分别与所述LED芯片2和所述反射体5紧密相连，相对于现有的LED发光器件100，大大缩小了所述反射体5与所述LED芯片2之间的间隔，从而本实施例中的所述反射体5有效的收窄了所述LED发光器件100的出光面积。使得所述LED发光器件100更易于进行二次光学设计，在进行所述二次光学设计时可以采用小尺寸的光学透镜，从而做到器件级的光学集成。
实施例二
本实施例提出了一种LED发光器件100的制作方法，其与实施例一中的制作方法的区别在于：在所述步骤S5和步骤S6之间增加了步骤SB。所述步骤SB为，将具有多个光学透镜6的连体透镜600贴装于所述支架1的上表面或所述反射体5的上表面，多个所述光学透镜6与多个所述发光区域11一一对应。本领域技术人员应当理解的是，在所述步骤SB中，当所述支架1的上表面高于所述反射体5的上表面时，则将所述连体透镜600贴装在所述支架1上；当所述支架1的上表面低于所述反射体5的上表面时，则将所述连体透镜600贴装在所述反射体5上。步骤SB中的连体透镜600会在步骤S6中被分离切割，使得每一个单个的LED发光器件100都具备光学透镜6，以满足更多的发光角度的控制需求，这样的制作方式利于批量生产具备光学透镜6的LED发光器件100。
具体的，所述连体透镜600所包括的多个所述光学透镜6与所述支架1上的多个所述发光区域11一样地呈矩形阵列排布，当所述连体透镜600贴装到所述多个所述支架1的上表面或所述反射体5的上表面时，多个所述光学透镜6与多个所述LED芯片2一一对应。本实施例中，为了获得小光束角度的LED发光器件，所述光学透镜6选择为聚光透镜。
参见图7，为采用本实施例提供的所述制作方法而制得的LED发光器件100。本实施例中的LED发光器件100与实施例一中的LED发光器件100的结构基本相似，唯一的区别在于，所述反射体5的上方具有一个聚光透镜，所述聚光透镜的尺寸较小，具体的，其正投影面积小于所述LED发光器件100的正投影面积。如此，形成发光光束角度小的器件级光学集成的LED发光器件100。
实施例三
本实施例提出了一种LED发光器件100的制作方法，其与第二实施例中的制作方法的区别在于：所述光学透镜6选择为散光透镜。
参见图8，为采用本实施例提供的所述制作方法而制得的LED发光器件100。本实施例中的LED发光器件100与第二实施例中的LED发光器件100的结构基本相似，唯一的区别在于，将所述反射体5上的聚光透镜替换成散光透镜，所述散光透镜的尺寸较小，具体的，其正投影面积小于所述LED发光器件100的正投影面积。如此，形成发光光束角度大的器件级光学集成的LED发光器件100。
实施例四
本实施例提出了一种LED发光器件100的制作方法，其与实施例一中的制作方法的区别在于：所述步骤S3中的模具7的下表面的所述凸出部71的型腔的形状为扁平的圆柱状，且所述型腔的截面圆的直径小于所述LED芯片2的上表面的对角线的尺寸。如此，在缓缓向下移动所述模具7使得每一个所述型腔内的透光胶水400与对应的所述LED芯片2接触的过程中，所述型腔的下表面恰好与所述LED芯片2的上表面接触，所述型腔内的透光胶水400不会覆盖整个所述LED芯片2的上表面，更不会流动至所述LED芯片2的四个侧面，而是在所述LED芯片2的上表面形成一个与所述型腔的形状一致的圆饼状透光胶体4，且所述透光胶体4的截面圆尺寸小于所述LED芯片2的上表面的对角线尺寸，使得所述透光胶体4仅覆盖所述LED芯片2的上表面的一部分，而所述LED芯片2的上表面的四角以及所述LED芯片2的四个侧面则外露于所述透光胶体4。如此一来，在后续的所述步骤S4中，在所述高反射胶500被注入到所述模具7和所述支架1之间的间隙中这一过程中，所述高反射胶500会包覆所述LED芯片2的上表面的四角以及所述LED芯片2的四个侧面。这会使得所述LED芯片2的出光面积被缩小，更有利于收窄所述LED发光器件100的出光面积。
本实施例还提供了通过所述制作方法而制得的LED发光器件100。所述LED发光器件100包括表面设置有LED芯片2的支架1，所述LED芯片2为正装结构，所述LED芯片2的两端分别通过一根引线3与所述支架1电连接，所述支架1上的所述LED芯片2附着有透光胶体4，参见图9，所述透光胶体4呈圆饼状，其截面圆的直径长度小于所述LED芯片2的上表面的对角线长度，所述透光胶体4仅包覆所述LED芯片2的上表面的一部分，所述LED芯片2的上表面的四角以及所述LED芯片2的四个侧面均外露于所述透光胶体4，所述LED芯片2及其透光胶体4周边通过模具7注塑方式精确成型有包覆并环绕于所述LED芯片2的反射体5，所述反射体5包裹所述LED芯片2的露出与所述透光胶体4的部分以及所述引线3的露出于所述透光胶体4的部分。在所述LED发光器件100中，所述反射体5直接的包覆所述LED芯片2的四个侧面，最大限度的减小了所述反射体5与所述LED芯片2之间的间隔，有利于所述LED发光器件100的更小角度发光。另外，所述LED芯片2的上表面的四角也被所述反射体5包覆，使得所述LED芯片2的出光面积缩小，进而有利减小整个所述LED发光器件100的出光面积。
实施例五
本实施例提出了一种LED发光器件100的制作方法，其与实施例一中的制作方法的区别在于：在所述步骤S2中，所述LED芯片2为倒装结构，因此，所述LED芯片2的两端不会引出引线3。
本实施例还提供通过所述制作方法而制得的LED发光器件100。本实施例中的LED发光器件100与实施例一中的LED发光器件100的结构基本相似，唯一的区别在于，本实施例中的所述LED发光器件100的LED芯片2的两端没有引线3。
实施例六
本实施例提出了一种LED发光器件100的制作方法，其与实施例一中的制作方法的区别在于：在所述步骤S2中，所述LED芯片2为正转结构，且所述LED芯片是垂直布置的，因此，所述LED芯片2仅一端通过一根引线3与所述支架1电性连接，所述引线3可以是但不限于金线。
本实施例还提供通过所述制作方法而制得的LED发光器件100。本实施例中的LED发光器件100与实施例一中的LED发光器件100的结构基本相似，唯一的区别在于，本实施例中的所述LED发光器件100中的所述LED芯片2仅一端通过引线3与所述支架1电连接。
上面结合附图对本发明的实施例进行了描述，但是本发明并不局限于上述的具体实施方式，上述的具体实施方式仅仅是示意性的，而不是限制性的，本领域的普通技术人员在本发明的启示下，在不脱离本发明宗旨和权利要求所保护的范围情况下，还可做出很多形式，这些均属于本发明的保护范围之内。

Claims (16)

  1. 一种LED发光器件，包括表面设置有LED芯片的支架，其特征在于，所述支架上LED芯片附着有透光胶体，所述LED芯片及其透光胶体周边精确成型有包覆并环绕于所述LED芯片的反射体。
  2. 根据权利要求1所述的LED发光器件，其特征在于，所述LED芯片通过引线与所述支架电性连接，所述反射体至少包覆部分所述引线。
  3. 根据权利要求2所述的LED发光器件，其特征在于，所述透光胶体覆盖于所述LED芯片的上表面的一部分。
  4. 根据权利要求3所述的LED发光器件，所述透光胶体内含有荧光粉或哑光粉。
  5. 根据权利要求3所述的LED发光器件，其特征在于，所述LED芯片的四角外露于所述透光胶体。
  6. 根据权利要求5所述的LED发光器件，其特征在于，所述LED芯片的表面带有荧光粉层。
  7. 根据权利要求1所述的LED发光器件，其特征在于，所述支架由吸光材料制成。
  8. 根据权利要求1所述的LED发光器件，其特征在于，所述支架由黑色EMC材料制成。
  9. 根据权利要求1所述的LED发光器件，其特征在于，还包括光学透镜，所述发射体的上表面高于所述支架的上表面，所述光学透镜设于所述反射体的上表面且位于所述LED芯片的正上方；所述光学透镜为聚光透镜或散光透镜。
  10. 根据权利要求1所述的LED发光器件，其特征在于，还包括光学透镜，所述发射体的上表面低于所述支架的上表面，所述光学透镜设于所述支架的上表面且位于所述LED芯片的正上方；所述光学透镜为聚光透镜或散光透镜。
  11. 一种LED发光器件的制作方法，其特征在于，包括如下步骤：
    步骤S1、提供具有多个发光区域的支架；
    步骤S2、在所述支架上的每一个所述发光区域内分别贴装至少一个LED芯片；
    步骤S3、利用一下表面具有多个凸出部的模具，在每一个所述突出部上涂覆一定量的透光胶水，将多个所述凸出部分别对准多个所述发光区域内的所述LED芯片，并通过移动所述模具或所述支架使得所述凸出部上的透光胶水与对应的所述LED芯片接触，并使所述透光胶水固化以形成透光胶体；
    步骤S4、在所述支架与所述模具之间的间隙中填充高反射胶并使之固化以形成反射体；
    步骤S5、移除所述模具；
    步骤S6、以单个所述发光区域为单位进行切割得到多个LED发光器件；
    所述步骤S1、步骤S2、步骤S3、步骤S4、步骤S5和步骤S6按先后顺序依次执行。
  12. 根据权利要求11所述的制作方法，其特征在于，在所述步骤S5和步骤S6之间还包括步骤SB：将具有多个光学透镜的连体透镜贴装于所述支架的上表面或所述反射体的上表面，多个所述光学透镜与多个所述发光区域一一对应；所述光学透镜为聚光透镜或散光透镜。
  13. 根据权利要求11所述的制作方法，其特征在于，在所述步骤S2中，所述LED芯片为倒装结构。
  14. 根据权利要求11所述的制作方法，其特征在于，在所述步骤S2中，所述LED芯片为正装结构。
  15. 根据权利要求14所述的制作方法，其特征在于，在所述步骤S2和所述步骤S3之间还包括步骤SA：将每一个所述LED芯片通过引线与所述支架电性连接；所述步骤4中形成的所述反射体至少包覆部分所述引线。
  16. 根据权利要求11所述的制作方法，其特征在于，所述模具的所述凸出部的下表面具有用于容纳所述透光胶水的型腔。
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