WO2019184360A1 - 阵列基板及其制备方法、显示装置 - Google Patents

阵列基板及其制备方法、显示装置 Download PDF

Info

Publication number
WO2019184360A1
WO2019184360A1 PCT/CN2018/114200 CN2018114200W WO2019184360A1 WO 2019184360 A1 WO2019184360 A1 WO 2019184360A1 CN 2018114200 W CN2018114200 W CN 2018114200W WO 2019184360 A1 WO2019184360 A1 WO 2019184360A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
nano
metal particle
substrate
electrode
Prior art date
Application number
PCT/CN2018/114200
Other languages
English (en)
French (fr)
Inventor
贾文斌
朱飞飞
孙力
万想
叶志杰
王欣欣
Original Assignee
京东方科技集团股份有限公司
合肥鑫晟光电科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 京东方科技集团股份有限公司, 合肥鑫晟光电科技有限公司 filed Critical 京东方科技集团股份有限公司
Priority to US16/476,465 priority Critical patent/US20210028403A1/en
Publication of WO2019184360A1 publication Critical patent/WO2019184360A1/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H10K50/856—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer

Definitions

  • the present disclosure relates to the field of display technologies, and in particular, to an array substrate, a method for fabricating the same, and a display device.
  • OLED Organic Light Emitting Diode
  • LCD liquid crystal display
  • OLED display panels have the advantages of self-luminescence, fast response, wide viewing angle, high brightness, colorful color, thinness and lightness compared with liquid crystal display (LCD), and are recognized as the next generation that is expected to replace LCD.
  • Display technology The principle of OLED illumination is that electrons and holes recombine in the luminescent layer to form excitons, thereby realizing their luminescent function.
  • An important factor that restricts the development of OLED display panels at present is the light extraction efficiency. Therefore, improving the light extraction efficiency of the OLED display panel is one of the problems to be solved at present.
  • a pixel defining layer located on a side of the substrate substrate, having a plurality of spaced apart barrier walls;
  • the first nano metal particle layer being configured to reflect light emitted by the electroluminescent functional layer .
  • the first nano metal particle layer comprises metal nano reflective spherical particles.
  • the metal nano-reflecting spherical particles have a size ranging from 10 nm to 20 nm.
  • the array substrate further includes: a first electrode located between the electroluminescent functional layer and the substrate substrate; and the electroluminescent functional layer is away from the a second electrode on one side of the substrate.
  • the first electrode is a reflective electrode
  • the second electrode is a transparent electrode
  • the array substrate further includes: a second nano metal particle layer between the first electrode and the electroluminescent functional layer;
  • the second nano metal particle layer is configured to reflect light emitted by the electroluminescent functional layer.
  • the first electrode is a transparent electrode
  • the second electrode is a reflective electrode
  • the array substrate further includes: a third nano metal particle layer between the second electrode and the electroluminescent functional layer;
  • the third nano metal particle layer is configured to reflect light emitted by the electroluminescent functional layer.
  • the material of the second nano metal particle layer is the same as the material of the first nano metal particle layer
  • the material of the third nano metal particle layer is the same as the material of the first nano metal particle layer.
  • an embodiment of the present disclosure further provides a display device, which includes the array substrate provided by the embodiment of the present disclosure.
  • the embodiment of the present disclosure further provides a method for preparing an array substrate, including:
  • forming a first nano metal particle layer on a sidewall of the retaining wall including:
  • a solution having the first nano metal particles is printed onto the sidewall of the retaining wall by an inkjet printing process to form the first nano metal particle layer.
  • forming a first nano metal particle layer on a sidewall of the retaining wall including:
  • the barrier wall of the pixel defining layer is inverted and immersed in a solution with the first nano metal particles to form the first nano metal particle layer.
  • the depth of the retaining wall inverted into the solution with the first nano metal particles is less than the depth of the retaining wall.
  • a pixel defining layer having a plurality of spaced-apart retaining walls is formed on one side of the substrate; forming a first nano-metal particle layer on the sidewall of the retaining wall, including:
  • a pixel defining layer having a plurality of spaced apart barrier walls is formed and a first nano metal particle layer is formed on sidewalls of the barrier wall.
  • the method before forming a pixel defining layer having a plurality of spaced apart barrier walls on one side of the substrate substrate, the method further includes:
  • the method further includes:
  • a second electrode is formed on the base substrate on which the electroluminescent functional layer is formed.
  • FIG. 1 is a schematic structural view showing an array substrate in the related art
  • FIG. 2 is a view schematically showing one of structural diagrams of an array substrate in an exemplary embodiment of the present disclosure
  • FIG. 3 is a schematic structural view showing an array substrate of an exemplary embodiment of the present disclosure
  • FIG. 4 is a schematic structural diagram 3 of an array substrate in an exemplary embodiment of the present disclosure.
  • FIG. 5 schematically shows a flow chart of a method of fabricating an array substrate in an exemplary embodiment of the present disclosure.
  • OLED As an active type of light-emitting device, OLED has received extensive attention in the industry, and its light-emitting efficiency is an important factor affecting OLED. As shown in FIG. 1, a part of the light excited in the light-emitting layer 30 is absorbed by the pixel defining layer 20 by lateral propagation or oblique propagation, and the other part may be at a metal interface such as an anode (top-emitting type OLED device). The surface of the pixel electrode 50, such as a metal anode, is quenched, and only part of the light can be emitted normally. Therefore, improving the light-emitting efficiency of the OLED is one of the problems to be solved at present.
  • a metal reflection surface may be prepared on an opening sidewall of the pixel defining layer, that is, a side on which the light emitting layer is disposed.
  • the metal reflective surface has a complicated manufacturing process on the one hand, for example, it is required to ensure that the reflective surface of the metal is not connected to the anode, and the pixel defining layer is required to cover a part of the anode, and on the other hand, the surface curvature of the metal reflecting surface. Limited, resulting in limited device light output, such as reflected light is easily quenched on the surface of the metal reflective surface.
  • the present exemplary embodiment provides an array substrate which can be applied to a bottom emission type OLED device display panel, a top emission type OLED device display panel, and a bidirectional emission type OLED device display panel.
  • the array substrate may include a base substrate 10, a pixel defining layer 20, and an electroluminescent functional layer 30.
  • the pixel defining layer 20 is located on one side of the base substrate 10, and the pixel defining layer 20 has a plurality of spaced-apart retaining walls 21, and the retaining walls 21 form openings 70.
  • the electroluminescent functional layer 30 is located between adjacent barrier walls 21, that is, the electroluminescent functional layer 30 is located in the opening 70 and on the side of the pixel defining layer 20 facing away from the substrate substrate 10. Further, a first nano metal particle layer 40 is disposed on a side wall of the retaining wall 21 on the side close to the electroluminescent functional layer 30, and the first nano metal particle layer 40 is configured to reflect the light emitted from the electroluminescent functional layer 30. .
  • the area of the opening 70 corresponds to the pixel area of the array substrate.
  • the first nano metal particle layer 40 is distributed along the sidewall surface of the barrier wall 21 of the pixel defining layer 20.
  • the array substrate provided by the exemplary embodiment of the present disclosure can make lateral or oblique incidence by providing a first nano metal particle layer on the sidewall of the barrier wall of the pixel defining layer 20 that can reflect light emitted from the electroluminescent functional layer.
  • the light rays to the pixel defining layer 20 are reflected back to the pixel region to be emitted, so that the light-emitting efficiency of the array substrate can be improved.
  • the first nano metal particles in the first nano metal particle layer refer to particles having a reflective property on the surface and a size on the order of nanometers.
  • the shape of the first nano metal particles may be spherical, spheroidal, nanorod, nanosheet, etc., which is not limited herein.
  • the first nano metal particles in the first nano metal particle layer in the embodiment of the present disclosure may include metal nano reflective spherical particles, but not limited thereto, as long as they have reflective properties.
  • the nanoparticles can be used. On this basis, in view of the reflection effect of the light, the distribution of the metal nano-reflective spherical particles in the present embodiment on the side wall surface of the retaining wall 21 of the pixel defining layer 20 is as uniform as possible.
  • the size of the metal nano-reflective spherical particles may be set, for example, in the range of 10 nm to 20 nm. Such spherical particles not only have a simple process, but also have a better effect of reflecting light. Specifically, the metal nano-reflective spherical particles may have a size of 10 nm, 15 nm, or 20 nm. Of course, in practical applications, the size of the metal nano-reflecting spherical particles can be determined according to the actual application environment, which is not limited herein.
  • the electroluminescent functional layer may include: an organic light emitting material layer.
  • the array substrate may further include: a first electrode 50 located between the electroluminescent functional layer 30 and the base substrate 10 and a second portion located on a side of the electroluminescent functional layer 30 facing away from the substrate 10 Electrode 60.
  • an important factor restricting the development of OLED devices is the service life.
  • the service life of OLEDs is determined by the current density of the OLEDs. If the OLED brightness is fixed, then improving the light extraction efficiency and reducing the current density is the service life. An important way of solving problems.
  • the first nano metal particle layer on the sidewall of the barrier wall of the pixel defining layer 20
  • the light that is incident laterally or obliquely to the pixel defining layer 20 can be reflected back to the pixel region to be emitted, thereby improving
  • the light-emitting efficiency of the OLED device can reduce the driving current under the same brightness condition, thereby reducing the power consumption and improving the service life of the OLED device.
  • a pixel circuit for driving the electroluminescent material layer to emit light is formed on the substrate substrate in the embodiment of the present disclosure, and the pixel circuit has a TFT (Thin Film Transistor) array.
  • one of the first electrode 50 and the second electrode 60 may be, for example, an anode, and the other may be, for example, a cathode.
  • the electroluminescent functional layer 30 may include an electron injection layer, an electron transport layer, and the like from the cathode to the anode.
  • the generally prepared electron injecting layer, electron transporting layer, hole transporting layer and hole injecting layer are entirely covered on the base substrate, and therefore, the first nano metal particle layer does not interact with the second electrode 60. direct contact.
  • the first nano metal particle layer may be disposed between the electroluminescent material layer and the sidewall of the barrier wall of the pixel defining layer.
  • the first electrode 50 may be a transparent electrode, that is, the first electrode 50 may transmit light
  • the second electrode 60 may be a reflective electrode, that is, the second electrode 60. It can reflect light.
  • the array substrate may further include: a third nano metal particle layer 80 between the second electrode 60 and the electroluminescent functional layer 30, the third nano metal particle layer being configured to reflect electricity Light emitted from the light-emitting functional layer 30. In this way, the light emitted toward the second electrode 60 can be reflected by the third nano metal particle layer 80, thereby further improving the light extraction efficiency.
  • the material of the third nano metal particle layer may be the same as the material of the first nano metal particle layer, even if the third nano metal particle of the third nano metal particle layer and the first nano metal particle of the first nano metal particle layer
  • the same for example, may be metal nano-reflective spherical particles.
  • the first nano metal particle layer and the third nano metal particle layer can be prepared using the same material.
  • the second electrode 60 may be a transparent electrode.
  • the first electrode 50 may be a reflective electrode.
  • the array substrate may further include: an electrode reflective film located between the first electrode and the electroluminescent functional layer.
  • the array substrate may further include: a second nano metal particle layer 90 between the first electrode 50 and the electroluminescent functional layer 30. The second nano metal particle layer 90 is configured to reflect light emitted from the electroluminescent functional layer 30.
  • the light emitted toward the first electrode 50 can be reflected by the second nano-metal particle layer 90, thereby further improving the light-emitting efficiency.
  • the surface of the first electrode 50 has the second nano metal particle layer 90, so that the quenching phenomenon of light in the top emission type OLED device can be remarkably improved, so that the coupling light extraction rate of the OLED device can be further improved.
  • the material of the second nano metal particle layer may be the same as the material of the first nano metal particle layer, even if the second nano metal particle of the second nano metal particle layer and the first nano metal particle of the first nano metal particle layer
  • the same for example, may be metal nano-reflective spherical particles.
  • the first nano metal particle layer and the second nano metal particle layer can be prepared using the same material.
  • the first electrode 50 and the second electrode 60 may both be transparent electrodes, and the sidewall surface of the retaining wall 21 of the pixel defining layer 20 is disposed at this time.
  • the first nano metal particle layer, and thus only the side wall surface of the current 21 of the pixel defining layer 20 has a reflective effect.
  • an embodiment of the present disclosure further provides a display device, including any of the above array substrates provided by the embodiments of the present disclosure.
  • the principle of the display device is similar to that of the foregoing array substrate. Therefore, the implementation of the display device can be referred to the implementation of the foregoing array substrate, and the repeated description is not repeated herein.
  • the foregoing display device may be any product or component having a display function, such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • a display function such as a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • Other indispensable components of the display device are understood by those skilled in the art, and are not described herein, nor should they be construed as limiting the disclosure.
  • the embodiment of the present disclosure further provides a method for preparing an array substrate.
  • the preparation method may include the following steps:
  • the first nano metal particles in the first nano metal particle layer refers to particles having a reflective property on the surface and having a size on the order of nanometers.
  • the shape of the first nano metal particles may be spherical, spheroidal, nanorod, nanosheet, etc., which is not limited herein.
  • the first nano metal particles in the first nano metal particle layer in the embodiment of the present disclosure may include metal nano reflective spherical particles, but not limited thereto, as long as they have reflective properties.
  • the nanoparticles can be used. On this basis, in view of the reflection effect of the light, the distribution of the metal nano-reflective spherical particles in the present embodiment on the side wall surface of the retaining wall 21 of the pixel defining layer 20 is as uniform as possible.
  • the size of the metal nano-reflective spherical particles may be set, for example, in the range of 10 nm to 20 nm. Such spherical particles not only have a simple process, but also have a better effect of reflecting light. Specifically, the metal nano-reflective spherical particles may have a size of 10 nm, 15 nm, or 20 nm. Of course, in practical applications, the size of the metal nano-reflecting spherical particles can be determined according to the actual application environment, which is not limited herein.
  • the method for preparing an array substrate can make a lateral direction by preparing a first nano metal particle layer that can reflect light emitted from the electroluminescence functional layer on a sidewall of the barrier wall of the pixel defining layer 20 Or the light incident obliquely incident on the pixel defining layer 20 is reflected back to the pixel region to be emitted, thereby improving the light-emitting efficiency of the OLED device in the array substrate, thereby reducing the driving current under the same brightness condition, thereby reducing power consumption and Improve the life of OLED devices.
  • the method before the pixel defining layer having the plurality of openings is formed on one side of the substrate substrate, the method further includes: forming the first electrode on the substrate. Moreover, after forming the electroluminescent functional layer in the opening, the method further includes forming a second electrode on the base substrate on which the electroluminescent functional layer is formed.
  • a transparent conductive layer may be formed on the base substrate to use the transparent conductive layer as the first electrode.
  • a reflective conductive layer is formed on the base substrate on which the electroluminescent functional layer is formed to use the reflective conductive layer as the second electrode. This can form a bottom emission type OLED array substrate.
  • a reflective conductive layer may be formed on the base substrate to use the reflective conductive layer as the first electrode.
  • a transparent conductive layer is formed on the base substrate on which the electroluminescent functional layer is formed to use the transparent conductive layer as the second electrode. This can form a top emission type OLED array substrate.
  • forming the first nano metal particle layer on the sidewall of the retaining wall may include printing the solution with the first nano metal particle onto the sidewall of the retaining wall by an inkjet printing process Forming a first nano-metal particle layer.
  • the material of the first nano metal particle layer is a metal nano reflective spherical particle.
  • Such a specific formation process of the metal nano-reflecting spherical particles may include, for example, forming a pixel defining layer 20 for filling the electroluminescent functional layer 30 on the base substrate 10, and adopting an inkjet printing process to carry spherical nano-reflecting spherical particles.
  • the solution is printed to the surface of the sidewall of the pixel defining layer 20 facing the side of the electroluminescent functional layer 30 to form metal nano-reflective spherical particles.
  • the metal nano-reflective spherical particles are distributed on the side wall surface of the retaining wall 21 of the pixel defining layer 20.
  • the metal nano-reflecting spherical particles formed by the solution with the metal nano-reflecting spherical particles may be the same particles as the metal nano-reflecting spherical particles in the solution, or may be obtained by processing the metal nano-reflecting spherical particles.
  • the metal nano-reflecting spherical nano-sized spherical particles of spherical particle size or shape are different.
  • the first nano metal particle layer can be prepared using a self-assembly process.
  • forming the first nano metal particle layer on the sidewall of the retaining wall may include: immersing the retaining wall of the pixel defining layer into the solution with the first nano metal particle to form the first nano metal particle layer .
  • the material of the first nano metal particle layer is a metal nano reflective spherical particle.
  • the specific formation process of the metal nano-reflecting spherical particles may include, for example, forming a pixel defining layer 20 for filling the electroluminescent functional layer 30 on the base substrate 10, and inverting the underlying substrate on which the pixel defining layer 20 is formed.
  • metal nano-reflecting spherical particles are formed on the surface of the barrier wall 21 of the pixel defining layer 20 facing the electroluminescent functional layer 30 side. At this time, the metal nano-reflective spherical particles are distributed on the side wall surface of the retaining wall 21 of the pixel defining layer 20. In the case of top emission, the substrate substrate forming the pixel defining layer 20 may be immersed in a solution with metal nano-reflecting spherical particles.
  • the first electrode In the case of bottom emission, the first electrode needs to transmit light, so the solution cannot be immersed to contact the first electrode when inverted, and only the retaining wall 21 formed with the pixel defining layer 20 is inverted and immersed in the spherical particle with metal nano-reflecting. In solution. And the depth of the retaining wall is inverted into the solution with the metal nano-reflecting spherical particles to a depth less than the depth of the retaining wall, so that the solution does not contact the first electrode.
  • the first nano metal particle layer may also be prepared by an exposure method.
  • a pixel defining layer having a plurality of spaced-apart retaining walls is formed on one side of the substrate; forming a first nano-metal particle layer on the sidewall of the retaining wall may include:
  • a pixel defining layer having a plurality of spaced apart barrier walls is formed and a first nano metal particle layer is formed on the sidewalls of the barrier wall.
  • the specific formation process of the metal nano-reflecting spherical particles may include, for example, forming a pixel defining layer film doped with metal nano-reflecting spherical particles on the substrate substrate 10, and obtaining a pixel defining layer exposing the metal nano-reflecting spherical particles by exposure and development. 20, so that the sidewalls of the barrier wall 21 of the pixel defining layer 20 have metal nano-reflecting spherical particles, and the metal nano-reflecting spherical particles and the pixel defining layer 20 present an integrated structure.
  • the method for fabricating the OLED array substrate provided by the exemplary embodiments of the present disclosure can form metal nano-reflecting spherical particles under the premise that the process is simple and feasible, so as to maximize the light-emitting efficiency of the OLED.
  • the method further includes: forming a third nanometer on the electroluminescent functional layer.
  • Metal particle layer The material of the third nano metal particle layer is a metal nano reflective spherical particle as an example.
  • the formation process at this time may correspondingly include: after forming the pixel defining layer 20, after forming the electroluminescent functional layer on the base substrate 10. Forming a third nano metal particle layer on the side of the electroluminescent functional layer facing away from the substrate.
  • the third nano metal particle layer may be formed by an inkjet printing process or a photolithography method, or the substrate substrate may be immersed in a solution containing the metal nano reflective spherical particles to form a metal nano reflection on the electroluminescent functional layer. Spherical particles.
  • the method further includes: forming the second nano metal particle located on the first electrode Floor.
  • the material of the second nano metal particle layer is a metal nano reflective spherical particle as an example.
  • the formation process at this time may correspondingly include forming a first electrode on the base substrate 10 before forming the pixel defining layer 20.
  • the second nano metal particle layer on the side of the first electrode facing away from the substrate substrate is formed while forming the first nano metal particle layer.
  • the second nano metal particle layer may be formed by an inkjet printing process or a photolithography method, or the substrate may be immersed in a solution containing the metal nano reflective spherical particles to form a metal nano reflective spherical particle on the first electrode. .
  • a first electrode is formed on the base substrate 10, and then a pixel defining layer 20 having a barrier wall is formed, followed by lining including the first electrode and the pixel defining layer 20.
  • the base substrate 10 is immersed in a solution with metal nano-reflecting spherical particles to form metal nano-reflecting spherical particles on a side of the first electrode facing away from the substrate, and metal nanoparticles are formed on sidewalls of the retaining wall 21 of the pixel defining layer 20. Reflecting spherical particles. This way can further reduce the processing process and reduce costs.
  • the surface of the first electrode 50 has the metal nano-reflecting spherical particles, so that the quenching phenomenon of light in the top-emitting OLED device can be remarkably improved, so that the coupling light-emitting rate of the OLED device can be further improved.
  • the preparation method of the second nano metal particle layer is similar to the preparation method of the first nano metal particle layer, and details are not described herein again.
  • the first electrode 50 and the second electrode 60 may both be transparent electrodes, and the first side surface of the retaining wall of the pixel defining layer 20 is firstly provided.
  • the nano metal particle layer, and therefore only the sidewall surface of the retaining wall of the pixel defining layer 20 has a reflective effect.
  • the preparation process of the array substrate will be described in detail below by taking the top emission type OLED device and the bottom emission type OLED device as examples.
  • the method for fabricating the array substrate of the bottom emission type OLED device may include the following steps:
  • a first electrode 50 such as a transparent anode
  • a pixel defining layer film having a thickness of 1-1.5 um is spin-coated on the substrate substrate on which the first electrode 50 is formed, and a pixelized pixel defining layer 20 is obtained by exposure and development;
  • a second electrode 60 such as a reflective cathode, is formed on the electroluminescent functional layer 30 to obtain an array substrate of a bottom emission type OLED.
  • the method for fabricating the array substrate of the bottom emission type OLED device may include the following steps:
  • a first electrode 50 such as a transparent anode
  • a pixel defining layer film having a thickness of 1-1.5 um is spin-coated on the substrate on which the first electrode 50 is formed, and a pixelized pixel defining layer 20 is obtained by exposure and development.
  • the substrate substrate on which the pixel defining layer 20 is formed is inverted and immersed in a solution with metal nano-reflecting spherical particles by a self-assembly method and the solution is not immersed in the first electrode 50 to be self-assembled in the pixel defining layer 20
  • the surface of the sidewall of the retaining wall forms a uniform metal nano-reflecting spherical particle to form a first nano-metal particle layer; wherein, as long as the uniformity of the solution is ensured, uniformity can be obtained by controlling the temperature and concentration of the solution and ensuring sufficient soaking time.
  • Metal nano-reflecting spherical particles when the surface of the sidewall of the retaining wall of the pixel defining layer 20 forms uniform metal nano-reflecting spherical particles, metal nano-reflecting spherical particles appear on the surface of the pixel defining layer 20, but as long as these metallic nano-reflecting spherical particles are not Continuous, it will not cause the circuit to leak from the side;
  • an electroluminescent functional layer 30 between the barrier walls 21 of the pixel defining layer 20 formed with the nano-reflecting spherical particles 40 by an evaporation process or an inkjet printing process;
  • a second electrode 60 such as a reflective cathode, is formed on the electroluminescent functional layer 30 to obtain an array substrate of a bottom emission type OLED.
  • the method for fabricating the array substrate of the bottom emission type OLED device may include the following steps:
  • a first electrode 50 such as a transparent anode
  • a pixel defining layer film doped with metal nano-reflecting spherical particles having a thickness of 1-1.5 um is spin-coated on the substrate on which the first electrode 50 is formed, and is obtained by exposure and development to obtain pixelated and exposed metal nano-reflecting spherical particles.
  • an electroluminescent functional layer 30 between the barrier walls 21 of the pixel defining layer 20 formed with the first nano metal particle layer by an evaporation process or an inkjet printing process;
  • a second electrode 60 such as a reflective cathode, is formed on the electroluminescent functional layer 30 to obtain an array substrate of a bottom emission type OLED.
  • the method for fabricating the array substrate of the top-emitting OLED device may include the following steps:
  • the reflective anode may first form a conductive layer such as Ag/ITO by sputtering in this step;
  • a pixel defining layer film having a thickness of 1-1.5 um is spin-coated on the substrate on which the first electrode 50 is formed, and a pixelized pixel defining layer 20 is obtained by exposure and development;
  • a solution with metal nano-reflecting spherical particles is printed onto the sidewall surface of the first electrode 50 and the barrier wall 21 of the pixel defining layer 20 by an inkjet printing process, thereby forming a first nano-metal particle layer having metal nano-reflecting spherical particles. 40 and a second nano metal particle layer 90;
  • An electroluminescent functional layer 30 is formed between the barrier walls 21 of the pixel defining layer 20 by an evaporation process or an inkjet printing process, and a second electrode 60 such as a transparent cathode is formed over the electroluminescent functional layer 30 to obtain a top.
  • An array substrate of an illuminating OLED is formed between the barrier walls 21 of the pixel defining layer 20 by an evaporation process or an inkjet printing process, and a second electrode 60 such as a transparent cathode is formed over the electroluminescent functional layer 30 to obtain a top.
  • the method for fabricating the array substrate of the top-emitting OLED device may include the following steps:
  • the reflective anode may first form a conductive layer such as Ag/ITO by sputtering in this step;
  • a pixel defining layer film having a thickness of 1-1.5 um is spin-coated on the substrate on which the first electrode 50 is formed, and a pixelized pixel defining layer 20 is obtained by exposure and development;
  • the substrate formed with the pixel defining layer 20 is immersed in a solution with metal nano-reflecting spherical particles by a self-assembly method and the solution is immersed in the first electrode 50 to self-assemble at the first electrode 50 and the pixel defining layer.
  • the sidewall surfaces of the retaining wall 21 of 20 form uniform metal nano-reflecting spherical particles, thereby forming a first nano-metal particle layer 40 and a second nano-metal particle layer 90 having metal nano-reflecting spherical particles; wherein, as long as the solution is ensured Uniformity, by controlling the temperature and concentration of the solution, and ensuring sufficient soaking time, uniform nano-reflective spherical particles can be obtained;
  • An electroluminescent functional layer 30 is formed between the barrier walls of the pixel defining layer 20 by an evaporation process or an inkjet printing process, and a second electrode 60 such as a transparent cathode is formed over the electroluminescent functional layer 30 to obtain a top emission.
  • the method for fabricating the array substrate of the top-emitting OLED device may include the following steps:
  • the reflective anode may be formed by sputtering to form a conductive layer and an electrode reflective film such as Ag/ITO on the side of the conductive layer facing away from the substrate 10;
  • a pixel defining layer film doped with metal nano-reflecting spherical particles having a thickness of 1-1.5 um is spin-coated on the substrate on which the first electrode 50 is formed, and is obtained by exposure and development to obtain pixelated and exposed metal nano-reflecting spherical particles.
  • An electroluminescent functional layer 30 is formed between the barrier walls 21 formed with the pixel defining layer 20 by an evaporation process or an inkjet printing process, and a second electrode 60 such as a transparent cathode is formed over the electroluminescent functional layer 30 to An array substrate of a top emission type OLED is obtained.
  • the preparation process of the array substrate provided by the exemplary embodiment is not limited to the above embodiments, as long as the method for forming metal nano-reflecting spherical particles on the sidewall surface of the retaining wall of the pixel defining layer 20 is Within the scope of public protection.
  • modules or units of equipment for action execution are mentioned in the detailed description above, such division is not mandatory. Indeed, in accordance with embodiments of the present disclosure, the features and functions of two or more modules or units described above may be embodied in one module or unit. Conversely, the features and functions of one of the modules or units described above may be further divided into multiple modules or units.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种阵列基板及其制备方法、显示装置，涉及显示技术领域。该阵列基板包括衬底基板（10）；像素界定层（20），位于衬底基板（10）一侧，具有多个间隔设置的挡墙（21）；电致发光功能层（30），位于相邻的挡墙（21）之间；其中，在挡墙（21）靠近电致发光功能层（30）一侧的侧壁上设置有第一纳米金属颗粒层（40），第一纳米金属颗粒层（40）被配置为反射电致发光功能层（30）出射的光，可提升OLED的出光效率。

Description

阵列基板及其制备方法、显示装置
本公开要求在2018年03月28日提交中国专利局、公开号为201810265297.2、公开名称为“像素结构及其制备方法、显示面板”的中国专利公开的优先权，其全部内容以引入的方式并入本公开中。
技术领域
本公开涉及显示技术领域，尤其涉及阵列基板及其制备方法、显示装置。
背景技术
有机发光二极管(Organic Light Emitting Diode，OLED)作为一种主动型发光器件，在显示领域和照明领域体现出了巨大的应用潜力，因而受到了学术界和产业界的强烈关注。在显示领域，OLED显示面板相对于液晶显示面板(Liquid Crystal Display，LCD)，具有自发光、反应快、视角广、亮度高、色彩艳、轻薄等优点，被公认为是有望取代LCD的下一代显示技术。OLED的发光原理是电子和空穴在发光层进行复合而形成激子，从而实现其发光功能的。目前制约OLED显示面板发展的一个重要因素是出光效率。因此提高OLED显示面板的出光效率是目前亟待解决的问题之一。
发明内容
本公开实施例提供的阵列基板，其中，包括：
衬底基板；
像素界定层，位于所述衬底基板一侧，具有多个间隔设置的挡墙；
电致发光功能层，位于相邻的所述挡墙之间；其中，
在所述挡墙靠近所述电致发光功能层一侧的侧壁上设置有第一纳米金属颗粒层，所述第一纳米金属颗粒层被配置为反射所述电致发光功能层出射的光。
可选地，在本公开实施例中，所述第一纳米金属颗粒层包括金属纳米反 射球形颗粒。
可选地，在本公开实施例中，所述金属纳米反射球形颗粒的尺寸在10nm～20nm范围内。
可选地，在本公开实施例中，所述阵列基板还包括：位于所述电致发光功能层与所述衬底基板之间的第一电极以及位于所述电致发光功能层背离所述衬底基板一侧的第二电极。
可选地，在本公开实施例中，所述第一电极为反射电极，所述第二电极为透明电极。
可选地，在本公开实施例中，所述阵列基板还包括：位于所述第一电极与所述电致发光功能层之间的第二纳米金属颗粒层；
所述第二纳米金属颗粒层被配置为反射所述电致发光功能层出射的光。
可选地，在本公开实施例中，所述第一电极为透明电极，所述第二电极为反射电极。
可选地，在本公开实施例中，所述阵列基板还包括：位于所述第二电极与所述电致发光功能层之间的第三纳米金属颗粒层；
所述第三纳米金属颗粒层被配置为反射所述电致发光功能层出射的光。
可选地，在本公开实施例中，第二纳米金属颗粒层的材料与所述第一纳米金属颗粒层的材料相同；
第三纳米金属颗粒层的材料与所述第一纳米金属颗粒层的材料相同。
相应地，本公开实施例还提供了显示装置，其中，包括本公开实施例提供的阵列基板。
相应地，本公开实施例还提供了阵列基板的制备方法，其中，包括：
在衬底基板一侧形成具有多个间隔设置的挡墙的像素界定层；
在所述挡墙的侧壁上形成第一纳米金属颗粒层；
在相邻的所述挡墙之间形成电致发光功能层；其中，所述第一纳米金属颗粒层位于所述挡墙靠近所述电致发光功能层一侧的侧壁上，被配置为反射所述电致发光功能层出射的光。
可选地，在本公开实施例中，在所述挡墙的侧壁上形成第一纳米金属颗粒层，包括：
采用喷墨打印工艺将带有第一纳米金属颗粒的溶液打印至所述挡墙的侧壁上，形成所述第一纳米金属颗粒层。
可选地，在本公开实施例中，在所述挡墙的侧壁上形成第一纳米金属颗粒层，包括：
将所述像素界定层的所述挡墙倒置浸入带有第一纳米金属颗粒的溶液中，形成所述第一纳米金属颗粒层。
可选地，在本公开实施例中，所述挡墙倒置浸入带有所述第一纳米金属颗粒的溶液中的深度小于所述挡墙的深度。
可选地，在本公开实施例中，在衬底基板一侧形成具有多个间隔设置的挡墙的像素界定层；在所述挡墙的侧壁上形成第一纳米金属颗粒层，包括：
在所述衬底基板上形成掺杂有第一纳米金属颗粒的像素界定层薄膜；
对所述像素界定层薄膜进行曝光和显影后，形成具有多个间隔设置的挡墙的像素界定层以及在所述挡墙的侧壁上形成第一纳米金属颗粒层。
可选地，在本公开实施例中，在衬底基板一侧形成具有多个间隔设置的挡墙的像素界定层之前，还包括：
在所述衬底基板上形成第一电极；
在相邻的所述挡墙之间形成电致发光功能层之后，还包括：
在形成有所述电致发光功能层的衬底基板上形成第二电极。
附图说明
此处的附图被并入说明书中并构成本说明书的一部分，示出了符合本公开的实施例，并与说明书一起用于解释本公开的原理。显而易见地，下面描述中的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1示意性示出相关技术中阵列基板的结构示意图；
图2示意性示出本公开示例性实施例中阵列基板的结构示意图之一；
图3示意性示出本公开示例性实施例中阵列基板的结构示意图之二；
图4示意性示出本公开示例性实施例中阵列基板的结构示意图之三；
图5示意性示出本公开示例性实施例中阵列基板的制备方法的流程图。
具体实施方式
现在将参考附图更全面地描述示例实施方式。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的范例；相反，提供这些实施方式使得本公开将更加全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。所描述的特征、结构或特性可以以任何合适的方式结合在一个或更多实施方式中。
此外，附图仅为本公开的示意性图解，并非一定是按比例绘制。图中相同的附图标记表示相同或类似的部分，因而将省略对它们的重复描述。附图中所示的一些方框图是功能实体，不一定必须与物理或逻辑上独立的实体相对应。可以采用软件形式来实现这些功能实体，或在一个或多个硬件模块或集成电路中实现这些功能实体，或在不同网络和/或处理器装置和/或微控制器装置中实现这些功能实体。
OLED作为一种主动型发光器件受到了业界的广泛关注，其出光效率是影响OLED的一个重要因素。如图1所示，在发光层30中受激形成的光中有一部分会通过横向传播或者斜向传播而被像素界定层20吸收，另一部分会在金属界面例如阳极(顶发光型OLED器件的像素电极50，例如金属阳极)的表面发生淬灭，只有部分光能够正常出射，因此提高OLED的出光效率是目前亟待解决的问题之一。
相关技术中，为了提升OLED的出光效率，可在像素界定层的开口侧壁即用于设置发光层的一侧制备金属反射面。但是，该金属反射面一方面存在制备工艺复杂的问题，例如需要在保证该金属反射面不与阳极相连的同时还要求像素界定层覆盖一部分阳极，另一方面则是该金属反射面的表面弧度有 限，导致器件出光率还是有限，如反射光很容易在该金属反射面的表面发生淬灭。
基于此，本示例实施方式提供了一种阵列基板，可应用于底发光型OLED器件显示面板、顶发光型OLED器件显示面板、以及双向发光型OLED器件显示面板中。如图2至图4所示，该阵列基板可以包括衬底基板10、像素界定层20、电致发光功能层30。其中，像素界定层20位于衬底基板10一侧，并且像素界定层20具有多个间隔设置的挡墙21，这些挡墙21形成了开口70。电致发光功能层30位于相邻的挡墙21之间，即电致发光功能层30位于开口70中且位于像素界定层20背离衬底基板10一侧。并且，在挡墙21靠近电致发光功能层30一侧的侧壁上设置有第一纳米金属颗粒层40，该第一纳米金属颗粒层40被配置为反射电致发光功能层30出射的光。其中，开口70区域对应阵列基板的像素区域。第一纳米金属颗粒层40沿像素界定层20的挡墙21的侧壁表面分布。
本公开示例性实施方式所提供的阵列基板，通过在像素界定层20的挡墙侧壁上设置可以反射电致发光功能层出射的光的第一纳米金属颗粒层，可使横向或斜向入射至像素界定层20的光线被反射回像素区域而实现出射，从而能够提高阵列基板的出光效率。
需要说明的是，第一纳米金属颗粒层中的第一纳米金属颗粒是指表面具有反射特性且尺寸为纳米级的颗粒。具体地，该第一纳米金属颗粒的形状可以是球状，类球状，纳米棒，纳米片等，在此不作限定。进一步地，如图2至图4所示，本公开实施例中第一纳米金属颗粒层中的第一纳米金属颗粒可以包括金属纳米反射球形颗粒，但不以此为限，只要是具有反射特性的纳米颗粒即可。在此基础上，考虑到光线的反射效果，本实施例中的金属纳米反射球形颗粒在像素界定层20的挡墙21的侧壁表面的分布越均匀越好。
可选的，金属纳米反射球形颗粒的尺寸可以设置在例如10nm～20nm范围内。这样的球形颗粒不仅工艺制程简单，而且能够更好的起到反射光的效果。具体地，金属纳米反射球形颗粒的尺寸可以为10nm、15nm或者20nm。当然， 在实际应用中，金属纳米反射球形颗粒的尺寸可以根据实际应用环境来设计确定，在此不作限定。
在具体实施时，电致发光功能层可以包括：有机发光材料层。在本公开实施例中，阵列基板还可以包括：位于电致发光功能层30与衬底基板10之间的第一电极50以及位于电致发光功能层30背离衬底基板10一侧的第二电极60。这样使得像素区域中的器件可以为OLED器件。且，目前制约OLED器件发展的一个重要因素是使用寿命，OLED的使用寿命是由驱动OLED发光的电流密度决定的，如果固定OLED的发光亮度，那么提高出光效率、降低电流密度则是解决使用寿命难题的一个重要途径。本公开实施例通过在像素界定层20的挡墙侧壁上设置第一纳米金属颗粒层，可使横向或斜向入射至像素界定层20的光线被反射回像素区域而实现出射，从而能够提高OLED器件的出光效率，因此在同等亮度条件下便可降低驱动电流，进而达到降低功耗以及提升OLED器件使用寿命的效果。需要说明的是，本公开实施例中的衬底基板上形成有用于驱动电致发光材料层发光的像素电路，该像素电路具有TFT(Thin Film Transistor，薄膜晶体管)阵列。
在具体实施时，第一电极50和第二电极60中的一个例如可以为阳极、另一个例如可以为阴极，电致发光功能层30自阴极到阳极依次可以包括电子注入层、电子传输层、电致发光材料层、空穴传输层和空穴注入层。并且，一般制备的电子注入层、电子传输层、空穴传输层和空穴注入层是一整面覆盖在衬底基板上的，因此，第一纳米金属颗粒层并不会与第二电极60直接接触。进一步地，可以使第一纳米金属颗粒层设置在电致发光材料层与像素界定层的挡墙的侧壁之间。
可选的，参考图2所示，在底发光型OLED器件中，第一电极50可以为透明电极，即第一电极50可以透射光，第二电极60可以为反射电极，即第二电极60可以反射光。这样可以使阵列基板为底发光型OLED阵列基板。进一步地，为了提高出光效率，阵列基板还可以包括：位于第二电极60与电致发光功能层30之间的第三纳米金属颗粒层80，该第三纳米金属颗粒层被配置 为反射电致发光功能层30出射的光。这样可以通过第三纳米金属颗粒层80将向第二电极60方向出射的光反射，进一步提高出光效率。进一步地，可以使第三纳米金属颗粒层的材料与第一纳米金属颗粒层的材料相同，即使第三纳米金属颗粒层的第三纳米金属颗粒与第一纳米金属颗粒层的第一纳米金属颗粒相同，例如可以均为金属纳米反射球形颗粒。这样可以采用同一材料制备第一纳米金属颗粒层和第三纳米金属颗粒层。
可选的，参考图3所示，在顶发光型OLED器件中，第二电极60可以为透明电极。第一电极50可以为反射电极。这样可以使阵列基板为顶发光型OLED阵列基板。进一步地，为了提高出光效率，阵列基板也可以包括：位于第一电极与电致发光功能层之间的电极反射薄膜。或者，阵列基板还可以包括：位于第一电极50与电致发光功能层30之间的第二纳米金属颗粒层90。该第二纳米金属颗粒层90被配置为反射电致发光功能层30出射的光。这样可以通过第二纳米金属颗粒层90将向第一电极50方向出射的光反射，进一步提高出光效率。并且，第一电极50的表面具有第二纳米金属颗粒层90，因此能够显著的改善顶发光型OLED器件中的光的淬灭现象，从而能够进一步提高OLED器件的耦合出光率。并且，这样还可以将第一电极50与第二纳米金属颗粒层90共同作为阳极。进一步地，可以使第二纳米金属颗粒层的材料与第一纳米金属颗粒层的材料相同，即使第二纳米金属颗粒层的第二纳米金属颗粒与第一纳米金属颗粒层的第一纳米金属颗粒相同，例如可以均为金属纳米反射球形颗粒。这样可以采用同一材料制备第一纳米金属颗粒层和第二纳米金属颗粒层。
可选的，参考图4所示，在双向发光型OLED器件中，第一电极50和第二电极60可以均为透明电极，此时由于像素界定层20的挡墙21的侧壁表面设有第一纳米金属颗粒层，因此仅像素界定层20的当前21的侧壁表面具有反射效果。
基于同一公开构思，本公开实施例还提供了显示装置，包括本公开实施例提供的上述任一种阵列基板。该显示装置解决问题的原理与前述阵列基板 相似，因此该显示装置的实施可以参见前述阵列基板的实施，重复之处在此不再赘述。
在具体实施时，本公开实施例提供的上述显示装置可以为：手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。对于该显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的，在此不做赘述，也不应作为对本公开的限制。
基于同一公开构思，本公开实施例还提供了阵列基板的制备方法，如图5所示，该制备方法可以包括如下步骤：
S501、在衬底基板一侧形成具有多个间隔设置的挡墙的像素界定层。
S502、在挡墙的侧壁上形成第一纳米金属颗粒层。
S503、在相邻的挡墙之间形成电致发光功能层；其中，第一纳米金属颗粒层位于挡墙靠近电致发光功能层一侧的侧壁上，被配置为反射电致发光功能层出射的光。
其中，第一纳米金属颗粒层中的第一纳米金属颗粒是指表面具有反射特性且尺寸为纳米级的颗粒。具体地，该第一纳米金属颗粒的形状可以是球状，类球状，纳米棒，纳米片等，在此不作限定。进一步地，如图2至图4所示，本公开实施例中第一纳米金属颗粒层中的第一纳米金属颗粒可以包括金属纳米反射球形颗粒，但不以此为限，只要是具有反射特性的纳米颗粒即可。在此基础上，考虑到光线的反射效果，本实施例中的金属纳米反射球形颗粒在像素界定层20的挡墙21的侧壁表面的分布越均匀越好。
可选的，金属纳米反射球形颗粒的尺寸可以设置在例如10nm～20nm范围内。这样的球形颗粒不仅工艺制程简单，而且能够更好的起到反射光的效果。具体地，金属纳米反射球形颗粒的尺寸可以为10nm、15nm或者20nm。当然，在实际应用中，金属纳米反射球形颗粒的尺寸可以根据实际应用环境来设计确定，在此不作限定。
本公开示例性实施方式所提供的阵列基板的制备方法，通过在像素界定层20的挡墙的侧壁上制备可以反射电致发光功能层出射的光的第一纳米金属 颗粒层，可使横向或斜向入射至像素界定层20的光线被反射回像素区域而实现出射，从而能够提高阵列基板中OLED器件的出光效率，因此在同等亮度条件下便可降低驱动电流，进而达到降低功耗以及提升OLED器件使用寿命的效果。
本示例实施方式中，在衬底基板一侧形成具有多个开口的像素界定层之前，还可以包括：在衬底基板上形成第一电极。并且，在开口内形成电致发光功能层之后，还可以包括：在形成有电致发光功能层的衬底基板上形成第二电极。具体地，可以在衬底基板上形成透明导电层，以将该透明导电层作为第一电极。在形成有电致发光功能层的衬底基板上形成反射导电层，以将该反射导电层作为第二电极。这样可以形成底发光型OLED阵列基板。或者，可以在衬底基板上形成反射导电层，以将该反射导电层作为第一电极。在形成有电致发光功能层的衬底基板上形成透明导电层，以将该透明导电层作为第二电极。这样可以形成顶发光型OLED阵列基板。
在本示例的一些实施方式中，在挡墙的侧壁上形成第一纳米金属颗粒层，可以包括：采用喷墨打印工艺将带有第一纳米金属颗粒的溶液打印至挡墙的侧壁上，形成第一纳米金属颗粒层。下面以第一纳米金属颗粒层的材料为金属纳米反射球形颗粒为例进行说明。这样金属纳米反射球形颗粒的具体形成过程例如可以包括：在衬底基板10上形成用于填充电致发光功能层30的像素界定层20，并采用喷墨打印工艺将带有金属纳米反射球形颗粒的溶液打印至像素界定层20的挡墙21面向电致发光功能层30一侧的侧壁的表面，以形成金属纳米反射球形颗粒。此时金属纳米反射球形颗粒分布在像素界定层20的挡墙21的侧壁表面。其中，由带有金属纳米反射球形颗粒的溶液而形成的金属纳米反射球形颗粒可以是与溶液中的金属纳米反射球形颗粒相同的粒子，也可以是由金属纳米反射球形颗粒经受处理而得到与之前的金属纳米反射球形颗粒尺寸或形状不相同的金属纳米反射球形颗粒。
在本示例的另一些实施方式中，可以采用自组装法制备第一纳米金属颗粒层。在具体实施时，在挡墙的侧壁上形成第一纳米金属颗粒层，可以包括： 将像素界定层的挡墙倒置浸入带有第一纳米金属颗粒的溶液中，形成第一纳米金属颗粒层。下面以第一纳米金属颗粒层的材料为金属纳米反射球形颗粒为例进行说明。金属纳米反射球形颗粒的具体形成过程例如可以包括：在衬底基板10上形成用于填充电致发光功能层30的像素界定层20，并将形成有像素界定层20的衬底基板倒置浸入带有金属纳米反射球形颗粒的溶液中，以在像素界定层20的挡墙21面向电致发光功能层30一侧的表面形成金属纳米反射球形颗粒。此时金属纳米反射球形颗粒分布在像素界定层20的挡墙21的侧壁表面。在顶发射的情况下，可以将形成像素界定层20的衬底基板浸入带有金属纳米反射球形颗粒的溶液中。在底发射的情况下，第一电极需要透光，所以倒置时溶液不能浸没接触到第一电极，此时仅将形成有像素界定层20的挡墙21倒置浸入带有金属纳米反射球形颗粒的溶液中。并且使得挡墙倒置浸入带有金属纳米反射球形颗粒的溶液中的深度小于挡墙的深度，这样溶液不会接触到第一电极。
在本示例的又一些实施方式中，第一纳米金属颗粒层还可以采用曝光法进行制备。在具体实施时，在衬底基板一侧形成具有多个间隔设置的挡墙的像素界定层；在挡墙的侧壁上形成第一纳米金属颗粒层，可以包括：
在衬底基板上形成掺杂有第一纳米金属颗粒的像素界定层薄膜；
对像素界定层薄膜进行曝光和显影后，形成具有多个间隔设置的挡墙的像素界定层以及在挡墙的侧壁上形成第一纳米金属颗粒层。下面以第一纳米金属颗粒层的材料为金属纳米反射球形颗粒为例进行说明。金属纳米反射球形颗粒的具体形成过程例如可以包括：在衬底基板10上形成掺杂有金属纳米反射球形颗粒的像素界定层薄膜，并通过曝光和显影得到露出金属纳米反射球形颗粒的像素界定层20，以使像素界定层20的挡墙21的侧壁上具有金属纳米反射球形颗粒，此时金属纳米反射球形颗粒与像素界定层20呈现为一体化结构。
基于上述实施方式可知，本公开示例性实施方式所提供的OLED阵列基板的制备方法可在工艺简单可行的前提下形成金属纳米反射球形颗粒，以最 大程度的提高OLED的出光效率。
可选的，参考图2所示，在低发光型OLED器件中，在形成电致发光功能层之后，在形成第二电极之前，还可以包括：形成位于电致发光功能层上的第三纳米金属颗粒层。以第三纳米金属颗粒层的材料为金属纳米反射球形颗粒为例进行说明。此时该形成过程相应的可以包括：在形成像素界定层20之前，在衬底基板10上形成电致发光功能层后。形成位于电致发光功能层背离衬底基板一侧第三纳米金属颗粒层。具体地，第三纳米金属颗粒层可以采用喷墨打印工艺、光刻法形成，也可以将衬底基板浸入到含有金属纳米反射球形颗粒的溶液中，在电致发光功能层上形成金属纳米反射球形颗粒。
可选的，参考图3所示，在顶发光型OLED器件中，在形成第一电极之后，在形成电致发光功能层之前，还可以包括：形成位于第一电极上的第二纳米金属颗粒层。以第二纳米金属颗粒层的材料为金属纳米反射球形颗粒为例进行说明。此时该形成过程相应的可以包括：在形成像素界定层20之前，在衬底基板10上形成第一电极。在形成第一纳米金属颗粒层的同时，形成位于第一电极背离衬底基板一侧第二纳米金属颗粒层。具体地，第二纳米金属颗粒层可以采用喷墨打印工艺、光刻法形成，也可以将衬底基板浸入到含有金属纳米反射球形颗粒的溶液中，在第一电极上形成金属纳米反射球形颗粒。
在另一实施方式中，在形成像素界定层20之前，在衬底基板10上形成第一电极，然后形成具有挡墙的像素界定层20，接着将包括第一电极以及像素界定层20的衬底基板10浸入带有金属纳米反射球形颗粒的溶液中，以在位于第一电极背离衬底基板一侧形成金属纳米反射球形颗粒，并且在像素界定层20的挡墙21的侧壁形成金属纳米反射球形颗粒。这种方式可以进一步的减少处理工艺，降低成本。
基于此，由于第一电极50的表面具有金属纳米反射球形颗粒，因此能够显著的改善顶发光型OLED器件中的光的淬灭现象，从而能够进一步提高OLED器件的耦合出光率。需要说明的是：第二纳米金属颗粒层的制备方法与第一纳米金属颗粒层的制备方法类似，这里不再赘述。
可选的，参考图4所示，在双向发光型OLED器件中，第一电极50和第二电极60可以均为透明电极，此时由于像素界定层20的挡墙侧壁表面设有第一纳米金属颗粒层，因此仅像素界定层20的挡墙的侧壁表面具有反射效果。
下面分别以顶发光型OLED器件和底发光型OLED器件为例对阵列基板的制备过程进行详细的描述。
在一些可能的实施例方式中，参考图2所示，底发光型OLED器件的阵列基板的制备方法可以包括如下步骤：
在衬底基板10上制备像素电路；
在衬底基板10上形成第一电极50，例如透明阳极；
在形成有第一电极50的衬底基板上旋涂厚度为1-1.5um的像素界定层薄膜，并通过曝光和显影得到像素化的像素界定层20；
采用喷墨打印工艺将带有金属纳米反射球形颗粒的溶液打印至像素界定层20的挡墙21的侧壁表面，从而形成具有金属纳米反射球形颗粒的第一纳米金属颗粒层40；
采用蒸镀工艺或者喷墨打印工艺在形成有第一纳米金属颗粒层40的像素界定层20的挡墙21之间形成电致发光功能层30；
采用喷墨打印工艺将带有金属纳米反射球形颗粒的溶液打印至电致发光功能层30的表面，从而形成具有金属纳米反射球形颗粒的第三纳米金属颗粒层80；
在电致发光功能层30上形成第二电极60，例如反射阴极，以得到底发光型OLED的阵列基板。
在一些可能的实施例方式中，参考图2所示，底发光型OLED器件的阵列基板的制备方法可以包括如下步骤：
在衬底基板10上制备像素电路；
在衬底基板10上形成第一电极50，例如透明阳极；
在形成有第一电极50的基板上旋涂厚度为1-1.5um的像素界定层薄膜，并通过曝光和显影得到像素化的像素界定层20。具体地，采用自组装法将形 成有像素界定层20的衬底基板倒置浸入带有金属纳米反射球形颗粒的溶液中并控制溶液不浸没第一电极50，以通过自组装在像素界定层20的挡墙侧壁表面形成均匀的金属纳米反射球形颗粒，从而形成第一纳米金属颗粒层；其中，只要保证溶液的均匀性，通过控制溶液的温度和浓度，并保证浸泡时间充分，便可获得均匀的金属纳米反射球形颗粒；像素界定层20的挡墙侧壁表面形成均匀的金属纳米反射球形颗粒时，像素界定层20的表面会出现金属纳米反射球形颗粒，但是只要这些金属纳米反射球形颗粒不连续，就不会造成电路从边侧漏电；
采用蒸镀工艺或者喷墨打印工艺在形成有纳米反射球形颗粒40的像素界定层20的挡墙21之间形成电致发光功能层30；
采用喷墨打印工艺将带有金属纳米反射球形颗粒的溶液打印至电致发光功能层30的表面，从而形成具有金属纳米反射球形颗粒的第三纳米金属颗粒层80；
在电致发光功能层30上形成第二电极60，例如反射阴极，以得到底发光型OLED的阵列基板。
在一些可能的实施例方式中，参考图2所示，底发光型OLED器件的阵列基板的制备方法可以包括如下步骤：
在衬底基板10上制备像素电路；
在衬底基板10上形成第一电极50，例如透明阳极；
在形成有第一电极50的基板上旋涂厚度为1-1.5um的掺杂有金属纳米反射球形颗粒的像素界定层薄膜，并通过曝光和显影得到像素化的且露出金属纳米反射球形颗粒的像素界定层20；
采用蒸镀工艺或者喷墨打印工艺在形成有第一纳米金属颗粒层的像素界定层20的挡墙21之间形成电致发光功能层30；
采用喷墨打印工艺将带有金属纳米反射球形颗粒的溶液打印至电致发光功能层30的表面，从而形成具有金属纳米反射球形颗粒的第三纳米金属颗粒层80；
在电致发光功能层30上形成第二电极60，例如反射阴极，以得到底发光型OLED的阵列基板。
在一些可能的实施例方式中，参考图3所示，顶发光型OLED器件的阵列基板的制备方法可以包括如下步骤：
在衬底基板10上制备像素电路；
在衬底基板10上形成第一电极50，例如反射阳极，该反射阳极可先在本步骤中通过溅射法形成导电层例如Ag/ITO；
在形成有第一电极50的基板上旋涂厚度为1-1.5um的像素界定层薄膜，并通过曝光和显影得到像素化的像素界定层20；
采用喷墨打印工艺将带有金属纳米反射球形颗粒的溶液打印至第一电极50以及像素界定层20的挡墙21的侧壁表面，从而形成具有金属纳米反射球形颗粒的第一纳米金属颗粒层40和第二纳米金属颗粒层90；
采用蒸镀工艺或者喷墨打印工艺在像素界定层20的挡墙21之间形成电致发光功能层30，并在电致发光功能层30的上方形成第二电极60例如透明阴极，以得到顶发光型OLED的阵列基板。
在一些可能的实施例方式中，参考图3所示，顶发光型OLED器件的阵列基板的制备方法可以包括如下步骤：
在衬底基板10上制备像素电路；
在衬底基板10上形成第一电极50，例如反射阳极，该反射阳极可先在本步骤中通过溅射法形成导电层例如Ag/ITO；
在形成有第一电极50的基板上旋涂厚度为1-1.5um的像素界定层薄膜，并通过曝光和显影得到像素化的像素界定层20；
采用自组装法将形成有像素界定层20的基板正置或倒置浸入带有金属纳米反射球形颗粒的溶液中并控制溶液浸没第一电极50，以通过自组装在第一电极50以及像素界定层20的挡墙21的侧壁表面均形成均匀的金属纳米反射球形颗粒，从而形成具有金属纳米反射球形颗粒的第一纳米金属颗粒层40和第二纳米金属颗粒层90；其中，只要保证溶液的均匀性，通过控制溶液的温 度和浓度，并保证浸泡时间充分，便可获得均匀的纳米反射球形颗粒；
采用蒸镀工艺或者喷墨打印工艺在像素界定层20的挡墙之间形成电致发光功能层30，并在电致发光功能层30的上方形成第二电极60例如透明阴极，以得到顶发光型OLED的阵列基板。
在一些可能的实施例方式中，顶发光型OLED器件的阵列基板的制备方法可以包括如下步骤：
在衬底基板10上制备像素电路；
在衬底基板10上形成第一电极50，例如反射阳极，该反射阳极可以采用溅射法形成导电层以及位于导电层背离衬底基板10一侧的电极反射薄膜例如Ag/ITO；
在形成有第一电极50的基板上旋涂厚度为1-1.5um的掺杂有金属纳米反射球形颗粒的像素界定层薄膜，并通过曝光和显影得到像素化的且露出金属纳米反射球形颗粒的像素界定层20；
采用蒸镀工艺或者喷墨打印工艺在形成有像素界定层20的挡墙21之间形成电致发光功能层30，并在电致发光功能层30的上方形成第二电极60例如透明阴极，以得到顶发光型OLED的阵列基板。
需要说明的是：本示例实施方式所提供的阵列基板的制备过程不限于上述的实施例，只要是在像素界定层20的挡墙侧壁表面上形成金属纳米反射球形颗粒的方法，均在本公开的保护范围之内。
应当注意，尽管在上文详细描述中提及了用于动作执行的设备的若干模块或者单元，但是这种划分并非强制性的。实际上，根据本公开的实施方式，上文描述的两个或更多模块或者单元的特征和功能可以在一个模块或者单元中具体化。反之，上文描述的一个模块或者单元的特征和功能可以进一步划分为由多个模块或者单元来具体化。
此外，尽管在附图中以特定顺序描述了本公开中方法的各个步骤，但是，这并非要求或者暗示必须按照该特定顺序来执行这些步骤，或是必须执行全部所示的步骤才能实现期望的结果。附加的或备选的，可以省略某些步骤， 将多个步骤合并为一个步骤执行，以及/或者将一个步骤分解为多个步骤执行等。
本领域技术人员在考虑说明书及实践这里公开的公开后，将容易想到本公开的其他实施例。本公开旨在涵盖本公开的任何变型、用途或者适应性变化，这些变型、用途或者适应性变化遵循本公开的一般性原理并包括本公开未公开的本技术领域中的公知常识或惯用技术手段。说明书和实施例仅被视为示例性的，本公开的真正范围和精神由权利要求指出。
显然，本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开实施例的精神和范围。这样，倘若本公开实施例的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (16)

  1. 一种阵列基板，包括：
    衬底基板；
    像素界定层，位于所述衬底基板一侧，具有多个间隔设置的挡墙；
    电致发光功能层，位于相邻的所述挡墙之间；其中，
    在所述挡墙靠近所述电致发光功能层一侧的侧壁上设置有第一纳米金属颗粒层，所述第一纳米金属颗粒层被配置为反射所述电致发光功能层出射的光。
  2. 根据权利要求1所述的阵列基板，其中，所述第一纳米金属颗粒层包括金属纳米反射球形颗粒。
  3. 根据权利要求2所述的阵列基板，其中，所述金属纳米反射球形颗粒的尺寸在10nm～20nm范围内。
  4. 根据权利要求1-3任一项所述的阵列基板，其中，所述阵列基板还包括：位于所述电致发光功能层与所述衬底基板之间的第一电极以及位于所述电致发光功能层背离所述衬底基板一侧的第二电极。
  5. 根据权利要求4所述的阵列基板，其中，所述第一电极为反射电极，所述第二电极为透明电极。
  6. 根据权利要求5所述的阵列基板，其中，所述阵列基板还包括：位于所述第一电极与所述电致发光功能层之间的第二纳米金属颗粒层；
    所述第二纳米金属颗粒层被配置为反射所述电致发光功能层出射的光。
  7. 根据权利要求4所述的阵列基板，其中，所述第一电极为透明电极，所述第二电极为反射电极。
  8. 根据权利要求7所述的阵列基板，其中，所述阵列基板还包括：位于所述第二电极与所述电致发光功能层之间的第三纳米金属颗粒层；
    所述第三纳米金属颗粒层被配置为反射所述电致发光功能层出射的光。
  9. 根据权利要求6或8所述的阵列基板，其中，第二纳米金属颗粒层的 材料与所述第一纳米金属颗粒层的材料相同；
    第三纳米金属颗粒层的材料与所述第一纳米金属颗粒层的材料相同。
  10. 一种显示装置，其中，包括权利要求1-9任一项所述的阵列基板。
  11. 一种阵列基板的制备方法，其中，包括：
    在衬底基板一侧形成具有多个间隔设置的挡墙的像素界定层；
    在所述挡墙的侧壁上形成第一纳米金属颗粒层；
    在相邻的所述挡墙之间形成电致发光功能层；其中，所述第一纳米金属颗粒层位于所述挡墙靠近所述电致发光功能层一侧的侧壁上，被配置为反射所述电致发光功能层出射的光。
  12. 根据权利要求11所述的制备方法，其中，在所述挡墙的侧壁上形成第一纳米金属颗粒层，包括：
    采用喷墨打印工艺将带有第一纳米金属颗粒的溶液打印至所述挡墙的侧壁上，形成所述第一纳米金属颗粒层。
  13. 根据权利要求11所述的制备方法，其中，在所述挡墙的侧壁上形成第一纳米金属颗粒层，包括：
    将所述像素界定层的所述挡墙倒置浸入带有第一纳米金属颗粒的溶液中，形成所述第一纳米金属颗粒层。
  14. 根据权利要求13所述的制备方法，其中，所述挡墙倒置浸入带有所述第一纳米金属颗粒的溶液中的深度小于所述挡墙的深度。
  15. 根据权利要求11所述的制备方法，其中，在衬底基板一侧形成具有多个间隔设置的挡墙的像素界定层；在所述挡墙的侧壁上形成第一纳米金属颗粒层，包括：
    在所述衬底基板上形成掺杂有第一纳米金属颗粒的像素界定层薄膜；
    对所述像素界定层薄膜进行曝光和显影后，形成具有多个间隔设置的挡墙的像素界定层以及在所述挡墙的侧壁上形成第一纳米金属颗粒层。
  16. 根据权利要求11-15任一项所述的制备方法，其中，在衬底基板一侧形成具有多个间隔设置的挡墙的像素界定层之前，还包括：
    在所述衬底基板上形成第一电极；
    在相邻的所述挡墙之间形成电致发光功能层之后，还包括：
    在形成有所述电致发光功能层的衬底基板上形成第二电极。
PCT/CN2018/114200 2018-03-28 2018-11-06 阵列基板及其制备方法、显示装置 WO2019184360A1 (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US16/476,465 US20210028403A1 (en) 2018-03-28 2018-11-06 Array substrate, method for fabricating the same, and display device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201810265297.2 2018-03-28
CN201810265297.2A CN108461651A (zh) 2018-03-28 2018-03-28 像素结构及其制备方法、显示面板

Publications (1)

Publication Number Publication Date
WO2019184360A1 true WO2019184360A1 (zh) 2019-10-03

Family

ID=63238069

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2018/114200 WO2019184360A1 (zh) 2018-03-28 2018-11-06 阵列基板及其制备方法、显示装置

Country Status (3)

Country Link
US (1) US20210028403A1 (zh)
CN (1) CN108461651A (zh)
WO (1) WO2019184360A1 (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108461651A (zh) * 2018-03-28 2018-08-28 京东方科技集团股份有限公司 像素结构及其制备方法、显示面板
CN109671749A (zh) * 2018-12-13 2019-04-23 武汉华星光电半导体显示技术有限公司 Oled显示屏及其制作方法
CN110459570B (zh) * 2019-08-19 2022-07-22 京东方科技集团股份有限公司 一种有机电致发光基板及有机电致发光显示面板
CN110854168B (zh) * 2019-10-31 2022-02-01 深圳市华星光电半导体显示技术有限公司 一种阵列基板、显示面板及阵列基板的制作方法
CN111415966A (zh) * 2020-04-20 2020-07-14 武汉华星光电半导体显示技术有限公司 有机发光二极管器件及显示装置
CN111584549B (zh) * 2020-04-29 2022-11-15 合肥维信诺科技有限公司 显示面板、显示面板的制备方法及显示装置
CN111912882B (zh) * 2020-06-30 2023-09-05 西南民族大学 一种室温条件下提高光激发柔性基底气敏传感器响应的方法
CN113871549B (zh) * 2021-09-24 2022-11-08 深圳市华星光电半导体显示技术有限公司 Oled显示面板
CN114220930B (zh) * 2021-10-29 2022-10-11 长沙惠科光电有限公司 显示面板及其制备方法
CN114583076B (zh) * 2022-02-16 2024-08-23 深圳市华星光电半导体显示技术有限公司 显示面板及其制备方法、电子装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103681769A (zh) * 2013-12-24 2014-03-26 京东方科技集团股份有限公司 显示装置、有机电致发光器件及其制作方法
CN103872261A (zh) * 2014-02-28 2014-06-18 京东方科技集团股份有限公司 一种有机电致发光器件和显示装置
CN104218050A (zh) * 2013-06-04 2014-12-17 三星显示有限公司 有机发光显示装置及其制造方法
CN108461651A (zh) * 2018-03-28 2018-08-28 京东方科技集团股份有限公司 像素结构及其制备方法、显示面板

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4252297B2 (ja) * 2002-12-12 2009-04-08 株式会社日立製作所 発光素子およびこの発光素子を用いた表示装置
CN103180980B (zh) * 2010-11-12 2017-04-26 三菱综合材料株式会社 使用反射膜用组合物的发光元件及其制造方法
CN103837913B (zh) * 2012-11-26 2016-05-04 中国科学院理化技术研究所 反光镜及其制作工艺
CN105322081A (zh) * 2014-06-09 2016-02-10 葳天科技股份有限公司 发光二极管封装改良结构及其改良方法
CN105159006B (zh) * 2015-09-15 2018-06-29 广州三星通信技术研究有限公司 反射型的显示装置及其制造方法
CN106848095A (zh) * 2017-01-24 2017-06-13 上海天马微电子有限公司 一种有机电致发光显示面板及其制备方法和电子设备
CN106784203B (zh) * 2017-03-31 2019-01-04 深圳市华星光电技术有限公司 一种像素结构及制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104218050A (zh) * 2013-06-04 2014-12-17 三星显示有限公司 有机发光显示装置及其制造方法
CN103681769A (zh) * 2013-12-24 2014-03-26 京东方科技集团股份有限公司 显示装置、有机电致发光器件及其制作方法
CN103872261A (zh) * 2014-02-28 2014-06-18 京东方科技集团股份有限公司 一种有机电致发光器件和显示装置
CN108461651A (zh) * 2018-03-28 2018-08-28 京东方科技集团股份有限公司 像素结构及其制备方法、显示面板

Also Published As

Publication number Publication date
US20210028403A1 (en) 2021-01-28
CN108461651A (zh) 2018-08-28

Similar Documents

Publication Publication Date Title
WO2019184360A1 (zh) 阵列基板及其制备方法、显示装置
WO2018113018A1 (zh) Oled显示面板及其制作方法
US20200144547A1 (en) Display panel and display device
TW478019B (en) Self light-emitting device
WO2018113019A1 (zh) Oled显示面板及其制作方法
US8294362B2 (en) Image display device, image display system, and methods for fabricating the same
WO2020001040A1 (zh) 发光器件及其制作方法、电子装置
WO2015043269A1 (zh) Oled像素结构和oled显示装置
JP2011507196A (ja) 発光ダイオードの外部効率の向上
KR20080054626A (ko) 유기 전계발광표시소자 및 그 제조방법
KR101654360B1 (ko) 유기 발광소자용 기판 및 그 제조방법
US10069112B2 (en) Organic light emitting diode display device
WO2020056865A1 (zh) 显示面板及显示装置
US11393999B2 (en) Display substrate with nano-grooves and method for manufacturing same, and display panel
WO2019061736A1 (zh) Oled显示器的制作方法及oled显示器
JP2008159309A (ja) 発光装置およびその製造方法、ならびに表示装置
US20210335891A1 (en) Color filter substrate, manufacturing method thereof, and oled display device
CN109801951B (zh) 阵列基板、电致发光显示面板及显示装置
US20030117067A1 (en) OLED having improved light extraction efficiency
WO2021097981A1 (zh) 有机电致发光二极管器件、显示面板及其制备方法
US20050029092A1 (en) Apparatus and method of employing self-assembled molecules to function as an electron injection layer of OLED
CN216054781U (zh) 显示基板及显示装置
JP2005243604A (ja) 有機エレクトロルミネセンス装置及びそれを製造する方法
WO2021139656A1 (zh) 有机电致发光结构及其制作方法、显示装置
CN113764489A (zh) 阵列基板、阵列基板的制作方法以及显示装置

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18913089

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18913089

Country of ref document: EP

Kind code of ref document: A1

32PN Ep: public notification in the ep bulletin as address of the adressee cannot be established

Free format text: NOTING OF LOSS OF RIGHTS PURSUANT TO RULE 112(1) EPC (EPO FORM 1205A DATED 07-04-2021)

122 Ep: pct application non-entry in european phase

Ref document number: 18913089

Country of ref document: EP

Kind code of ref document: A1